JP2003060175A - Solid state imaging device - Google Patents

Solid state imaging device

Info

Publication number
JP2003060175A
JP2003060175A JP2001240196A JP2001240196A JP2003060175A JP 2003060175 A JP2003060175 A JP 2003060175A JP 2001240196 A JP2001240196 A JP 2001240196A JP 2001240196 A JP2001240196 A JP 2001240196A JP 2003060175 A JP2003060175 A JP 2003060175A
Authority
JP
Japan
Prior art keywords
solid
wire
protective glass
state image
state imaging
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001240196A
Other languages
Japanese (ja)
Inventor
Atsushi Wakabayashi
篤 若林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nikon Corp
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Priority to JP2001240196A priority Critical patent/JP2003060175A/en
Publication of JP2003060175A publication Critical patent/JP2003060175A/en
Pending legal-status Critical Current

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Wire Bonding (AREA)

Abstract

PROBLEM TO BE SOLVED: To easily and surely prevent a protective glass from being brought into contact with a wire at a protective glass mounting time at a photodetector of a solid state imaging element in a solid state imaging device in which the imaging element is mounted on a substrate. SOLUTION: The solid state imaging device comprises the solid state imaging element having the photodetector and an I/O signal unit, the protective glass mounted to cover the photodetector of the imaging element, the substrate having the imaging element mounted thereon and an electrode pattern formed at a position opposed to the I/O signal unit, and wirings for connecting a plurality of electrode patterns disposed on the I/O signal unit to a plurality of electrode patterns disposed on the electrode pattern. The imaging device further comprises a wiring protecting means for preventing the protective glass from being brought into contact with the wiring at the time of mounting the glass on the imaging element.

Description

【発明の詳細な説明】Detailed Description of the Invention

【０００１】[0001]

【発明の属する技術分野】本発明は、固体撮像装置に係
わり、特に、固体撮像素子を基板に搭載した固体撮像装
置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a solid-state image pickup device, and more particularly to a solid-state image pickup device having a solid-state image pickup element mounted on a substrate.

【０００２】[0002]

【従来の技術】従来、固体撮像装置として、ＣＣＤ(Cha
rge Coupled Device)等の固体撮像素子を、基板上に搭
載したチップオンボード（ＣＯＢ）形式の固体撮像装置
が知られている。図６および図７は、このような固体撮
像装置を示すもので、この固体撮像装置では、ガラスエ
ポキシ樹脂からなる基板１上に、固体撮像素子２が搭載
されている。2. Description of the Related Art Conventionally, a CCD (Cha
A chip-on-board (COB) type solid-state imaging device in which a solid-state imaging device such as a large coupled device) is mounted on a substrate is known. 6 and 7 show such a solid-state imaging device. In this solid-state imaging device, a solid-state imaging device 2 is mounted on a substrate 1 made of glass epoxy resin.

【０００３】固体撮像素子２の上面には、受光部３およ
び入出力信号部４が形成されている。入出力信号部４に
は、複数の電極パッド５が所定間隔を置いて配置されて
いる。固体撮像素子２の上面には、受光部３を覆って保
護ガラス６が装着されている。基板１には、固体撮像素
子２の入出力信号部４に対向する位置に電極パターン部
７が形成されている。A light receiving portion 3 and an input / output signal portion 4 are formed on the upper surface of the solid-state image pickup element 2. A plurality of electrode pads 5 are arranged in the input / output signal section 4 at predetermined intervals. A protective glass 6 is attached to the upper surface of the solid-state image sensor 2 so as to cover the light receiving section 3. An electrode pattern portion 7 is formed on the substrate 1 at a position facing the input / output signal portion 4 of the solid-state image sensor 2.

【０００４】この電極パターン部７には、複数の電極パ
ターン８が所定間隔を置いて配置されている。電極パタ
ーン８は、固体撮像素子２の電極パッド５に、金，銅等
からなる信号入出力用のワイヤ９により接続されてい
る。そして、基板１には、チップ抵抗，チップコンデン
サ等の電子部品１０が配置され、また、コネクタ１１が
配置されている。In this electrode pattern portion 7, a plurality of electrode patterns 8 are arranged at a predetermined interval. The electrode pattern 8 is connected to the electrode pad 5 of the solid-state image sensor 2 by a signal input / output wire 9 made of gold, copper or the like. Then, electronic components 10 such as a chip resistor and a chip capacitor are arranged on the substrate 1, and a connector 11 is arranged.

【０００５】なお、基板１の電極パターン８は、図示し
ない内部配線を介してコネクタ１１に接続されており、
外部との電気的接続はコネクタ１１により行われる。上
述した固体撮像装置は、以下述べるようにして製造され
る。先ず、基板１上に、導電性あるいは絶縁性の接着剤
１２が、ディスペンサあるいは印刷機を用いて塗布さ
れ、固体撮像素子２が基板１上にダイボンディングさ
れ、熱硬化されて基板１上に固定される。The electrode pattern 8 on the substrate 1 is connected to the connector 11 via internal wiring (not shown),
Electrical connection to the outside is made by the connector 11. The solid-state imaging device described above is manufactured as described below. First, a conductive or insulating adhesive 12 is applied on the substrate 1 by using a dispenser or a printing machine, and the solid-state imaging device 2 is die-bonded on the substrate 1 and heat-cured to be fixed on the substrate 1. To be done.

【０００６】次に、固体撮像素子２の入出力信号部４の
電極パッド５と、基板１上の電極パターン８とが、金，
銅等からなる信号入出力用のワイヤ９でワイヤボンディ
ングされ、固体撮像素子２が電極パターン８に結線され
る。次に、固体撮像素子２の受光部３およびこの近傍
に、透明ジャンクションコート樹脂１３（図９に示す）
がディスペンサを用いて塗布され、保護ガラス６が搭載
され、熱硬化される。Next, the electrode pad 5 of the input / output signal section 4 of the solid-state image pickup device 2 and the electrode pattern 8 on the substrate 1 are made of gold,
The solid-state imaging device 2 is connected to the electrode pattern 8 by wire bonding with a signal input / output wire 9 made of copper or the like. Next, the transparent junction coat resin 13 (shown in FIG. 9) is provided on and near the light receiving portion 3 of the solid-state image sensor 2.
Is applied using a dispenser, the protective glass 6 is mounted, and it is heat-cured.

【０００７】次に、ワイヤ９を包むように成形性の良好
なワイヤ保護樹脂１４が塗布され、熱硬化される。次
に、基板１に、電子部品１０が半田付けされ、固体撮像
装置が製造される。Next, a wire-protecting resin 14 having good formability is applied so as to wrap the wire 9 and heat-cured. Next, the electronic component 10 is soldered to the board 1 to manufacture the solid-state imaging device.

【０００８】[0008]

【発明が解決しようとする課題】しかしながら、このよ
うな従来の固体撮像装置では、固体撮像素子２の受光部
３を覆って保護ガラス６を搭載する時に、保護ガラス６
がワイヤ９に接触し、ワイヤ９が損傷するおそれがある
という問題があった。However, in such a conventional solid-state image pickup device, when the protective glass 6 is mounted to cover the light receiving portion 3 of the solid-state image pickup element 2, the protective glass 6 is mounted.
Has a problem that the wire 9 may come into contact with the wire 9 and damage the wire 9.

【０００９】すなわち、例えば、保護ガラス６を斜めに
した状態で、保護ガラス６がワイヤ９に接触すると、例
えば、図８および図９に示すように、ワイヤ９の電極パ
ッド５への接続部９ａが、電極パッド５から剥離し、所
定の機能を得ることが困難になる。そして、従来、保護
ガラス６がワイヤ９に接触しないように、保護ガラス６
の搭載を非常に慎重に行う必要があり、保護ガラス６の
搭載に多大な時間が必要であった。That is, when the protective glass 6 contacts the wire 9 in a state where the protective glass 6 is inclined, for example, as shown in FIGS. 8 and 9, a connecting portion 9a of the wire 9 to the electrode pad 5 is formed. However, it becomes difficult to obtain a predetermined function by peeling from the electrode pad 5. Then, conventionally, the protective glass 6 is prevented from coming into contact with the wire 9.
It was necessary to mount the protective glass 6 very carefully, and it took a long time to mount the protective glass 6.

【００１０】本発明は、かかる従来の問題を解決するた
めになされたもので、固体撮像素子の受光部への保護ガ
ラスの装着時に、保護ガラスがワイヤに接触することを
容易，確実に防止することができる固体撮像装置を提供
することを目的とする。The present invention has been made in order to solve such a conventional problem, and easily and surely prevents the protective glass from coming into contact with the wire when the protective glass is attached to the light receiving portion of the solid-state image pickup device. It is an object of the present invention to provide a solid-state imaging device capable of performing the above.

【００１１】[0011]

【課題を解決するための手段】請求項１の固体撮像装置
は、受光部および入出力信号部を備えた固体撮像素子
と、前記固体撮像素子の受光部を覆って装着される保護
ガラスと、前記固体撮像素子が装着され前記入出力信号
部に対向する位置に電極パターン部が形成される基板
と、前記入出力信号部に配置される複数の電極パッドと
前記電極パターン部に配置される複数の電極パターンと
を接続するワイヤとを備えた固体撮像装置において、前
記保護ガラスの前記固体撮像素子への装着時に、前記保
護ガラスの前記ワイヤへの接触を防止するワイヤ保護手
段を有することを特徴とする。According to another aspect of the present invention, there is provided a solid-state image pickup device having a light-receiving portion and an input / output signal portion, and a protective glass mounted to cover the light-receiving portion of the solid-state image pickup element. A substrate on which the solid-state imaging device is mounted and an electrode pattern portion is formed at a position facing the input / output signal portion, a plurality of electrode pads arranged on the input / output signal portion, and a plurality of electrode pads arranged on the electrode pattern portion. In the solid-state imaging device including a wire that connects the electrode pattern with the electrode pattern, a wire protection unit that prevents contact of the protection glass with the wire when the protection glass is mounted on the solid-state imaging device is provided. And

【００１２】請求項２の固体撮像装置は、請求項１記載
の固体撮像装置において、前記ワイヤ保護手段は、前記
固体撮像素子の入出力信号部と前記保護ガラスとの間に
形成される突出部からなることを特徴とする。請求項３
の固体撮像装置は、請求項２記載の固体撮像装置におい
て、前記突出部は、前記固体撮像素子の入出力信号部と
前記保護ガラスとの間に形成される複数の突起部からな
ることを特徴とする。A solid-state image pickup device according to a second aspect is the solid-state image pickup device according to the first aspect, wherein the wire protection means is a protrusion formed between the input / output signal portion of the solid-state image pickup element and the protective glass. It is characterized by consisting of. Claim 3
3. The solid-state image pickup device according to claim 2, wherein the protrusion comprises a plurality of protrusions formed between the input / output signal section of the solid-state image sensor and the protective glass. And

【００１３】請求項４の固体撮像装置は、請求項３記載
の固体撮像装置において、前記突起部は、ダミーワイヤ
またはダミーワイヤの一部からなり、該ダミーワイヤ
は、前記固体撮像素子の前記入出力信号部と前記保護ガ
ラスとの間に形成されるダミー電極パッドと、前記基板
の前記電極パターン部の前記電極パターンの並び方向の
両端より外側に形成されるダミー電極パターンとに連結
されていることを特徴とする。A solid-state image pickup device according to a fourth aspect is the solid-state image pickup device according to the third aspect, wherein the protruding portion is made of a dummy wire or a part of the dummy wire, and the dummy wire is provided in the solid-state image pickup element. Dummy electrode pads formed between the output signal portion and the protective glass are connected to dummy electrode patterns formed outside both ends of the electrode pattern portion of the substrate in the arrangement direction of the electrode patterns. It is characterized by

【００１４】（作用）請求項１の固体撮像装置では、保
護ガラスの固体撮像素子への装着時における保護ガラス
のワイヤへの接触が、ワイヤ保護手段により防止され
る。請求項２の固体撮像装置では、ワイヤ保護手段が、
固体撮像素子の入出力信号部と保護ガラスとの間に形成
される突出部からなる。(Operation) In the solid-state image pickup device according to the first aspect, the wire protection means prevents contact between the protective glass and the wire when the protective glass is attached to the solid-state image pickup device. In the solid-state imaging device according to claim 2, the wire protection means includes:
The solid-state image sensor includes a protrusion formed between the input / output signal portion and the protective glass.

【００１５】そして、保護ガラスの固体撮像素子への装
着時には、突出部に保護ガラスが接触し、これにより保
護ガラスのワイヤへの接触が防止される。請求項３の固
体撮像装置では、ワイヤ保護手段の突出部が、固体撮像
素子の入出力信号部と保護ガラスとの間に形成される複
数の突起部からなる。When the protective glass is attached to the solid-state image pickup device, the protective glass comes into contact with the protruding portion, which prevents the protective glass from coming into contact with the wire. According to another aspect of the solid-state imaging device of the present invention, the protruding portion of the wire protection means is composed of a plurality of protruding portions formed between the input / output signal portion of the solid-state image sensor and the protective glass.

【００１６】そして、保護ガラスの固体撮像素子への装
着時には、突起部に保護ガラスが接触し、これにより保
護ガラスのワイヤへの接触が防止される。請求項４の固
体撮像装置では、固体撮像素子の入出力信号部と保護ガ
ラスとの間に信号の入出力に関与しないダミー電極パッ
ドが形成され、また、基板の電極パターン部の電極パタ
ーンの並び方向の両端より外側に信号の入出力に関与し
ないダミー電極パターンが形成される。When the protective glass is attached to the solid-state image pickup device, the protective glass comes into contact with the protrusions, which prevents the protective glass from contacting the wires. In the solid-state imaging device according to claim 4, a dummy electrode pad that does not participate in signal input / output is formed between the input / output signal section of the solid-state imaging element and the protective glass, and the arrangement of the electrode patterns in the electrode pattern section of the substrate is arranged. Dummy electrode patterns that do not participate in signal input / output are formed outside both ends in the direction.

【００１７】そして、ダミー電極パッドとダミー電極パ
ターンとに、ダミーワイヤが連結され、保護ガラスの固
体撮像素子への装着時には、ダミーワイヤに保護ガラス
が接触し、これにより保護ガラスのワイヤへの接触が防
止される。A dummy wire is connected to the dummy electrode pad and the dummy electrode pattern, and when the protective glass is attached to the solid-state image sensor, the protective glass comes into contact with the dummy wire, thereby contacting the protective glass with the wire. Is prevented.

【００１８】[0018]

【発明の実施の形態】以下、本発明を図面を用いて詳細
に説明する。DETAILED DESCRIPTION OF THE INVENTION The present invention will be described in detail below with reference to the drawings.

【００１９】図１および図２は、本発明の固体撮像装置
の第１の実施形態を示しており、この実施形態の固体撮
像装置は、例えば、エンコーダ用の受光センサとして使
用される。これ等の図において符号２１は、ガラスエポ
キシ樹脂からなる矩形状の基板２１を示している。1 and 2 show a first embodiment of a solid-state image pickup device of the present invention. The solid-state image pickup device of this embodiment is used, for example, as a light receiving sensor for an encoder. In these drawings, reference numeral 21 indicates a rectangular substrate 21 made of glass epoxy resin.

【００２０】この基板２１上には、矩形状の固体撮像素
子２３が搭載されている。固体撮像素子２３の上面に
は、矩形状の受光部２５が形成されている。また、固体
撮像素子２３の上面には、図の左側の端部に入出力信号
部２７が形成されている。入出力信号部２７には、複数
の矩形状の電極パッド２９が、端部に沿って所定間隔を
置いて配置されている。A rectangular solid-state image pickup device 23 is mounted on the substrate 21. A rectangular light receiving portion 25 is formed on the upper surface of the solid-state imaging device 23. An input / output signal section 27 is formed on the upper surface of the solid-state image sensor 23 at the left end of the figure. In the input / output signal section 27, a plurality of rectangular electrode pads 29 are arranged along the ends at predetermined intervals.

【００２１】固体撮像素子２３の上面には、受光部２５
およびこの近傍を覆って保護ガラス３１が装着されてい
る。基板２１には、固体撮像素子２３の入出力信号部２
７に対向する位置に電極パターン部３３が形成されてい
る。この電極パターン部３３には、複数の矩形状の電極
パターン３５が所定間隔を置いて配置されている。On the upper surface of the solid-state image pickup device 23, a light receiving section 25 is provided.
Further, a protective glass 31 is attached so as to cover the vicinity thereof. The substrate 21 includes an input / output signal unit 2 of the solid-state image sensor 23.
The electrode pattern portion 33 is formed at a position opposed to 7. In the electrode pattern portion 33, a plurality of rectangular electrode patterns 35 are arranged at a predetermined interval.

【００２２】電極パターン３５は、固体撮像素子２３の
電極パッド２９に、金，銅等からなる信号入出力用のワ
イヤ３７により接続されている。そして、基板２１の電
極パターン部３３と反対側の下面には、チップ抵抗，チ
ップコンデンサ等の電子部品３９が配置され、また、コ
ネクタ４１が配置されている。The electrode pattern 35 is connected to the electrode pad 29 of the solid-state image pickup device 23 by a signal input / output wire 37 made of gold, copper or the like. Then, on the lower surface of the substrate 21 opposite to the electrode pattern portion 33, electronic components 39 such as chip resistors and chip capacitors are arranged, and a connector 41 is arranged.

【００２３】なお、基板２１の電極パターン３５は、図
示しない内部配線を介してコネクタ４１に接続されてお
り、外部との電気的接続はコネクタ４１により行われ
る。そして、この実施形態では、固体撮像素子２３の入
出力信号部２７と保護ガラス３１との間にワイヤ保護手
段４３が形成されている。このワイヤ保護手段４３は、
入出力信号部２７の両側に形成され、ダミー電極パッド
２９Ａ、ダミー電極パターン３５Ａおよびダミーワイヤ
３７Ａとから構成されている。The electrode pattern 35 of the substrate 21 is connected to the connector 41 via an internal wiring (not shown), and the connector 41 is used for electrical connection with the outside. Further, in this embodiment, the wire protection means 43 is formed between the input / output signal section 27 of the solid-state imaging device 23 and the protective glass 31. This wire protection means 43 is
The dummy electrode pads 29A, the dummy electrode patterns 35A, and the dummy wires 37A are formed on both sides of the input / output signal section 27.

【００２４】すなわち、固体撮像素子２３の入出力信号
部２７の電極パッド２９の並び方向の両外側には、信号
の入出力に関与しないダミー電極パッド２９Ａが形成さ
れている。このダミー電極パッド２９Ａは、電極パッド
２９の並び方向より保護ガラス３１側によって、また、
両端の電極パッド２９より多少外側となる位置に形成さ
れている。That is, dummy electrode pads 29A that are not involved in signal input / output are formed on both outsides of the electrode pads 29 of the input / output signal section 27 of the solid-state image pickup device 23 in the arrangement direction. The dummy electrode pad 29A is provided on the protective glass 31 side with respect to the arrangement direction of the electrode pads 29, and
It is formed at a position slightly outside the electrode pads 29 at both ends.

【００２５】また、基板２１の電極パターン部３３の電
極パターン３５の並び方向の両端より外側に信号の入出
力に関与しないダミー電極パターン３５Ａが形成され
る。このダミー電極パターン３５Ａは、電極パターン３
５の並び方向より保護ガラス３１側によって、また、両
端の電極パターン３５より外側に、固体撮像素子２３の
電極パッド２９の並び方向の略延長上に形成されてい
る。Further, dummy electrode patterns 35A which are not involved in signal input / output are formed outside both ends in the arrangement direction of the electrode patterns 35 of the electrode pattern portion 33 of the substrate 21. This dummy electrode pattern 35A corresponds to the electrode pattern 3
It is formed on the side of the protective glass 31 with respect to the arrangement direction of 5 and outside the electrode patterns 35 at both ends, and is substantially extended in the arrangement direction of the electrode pads 29 of the solid-state imaging device 23.

【００２６】そして、ダミー電極パッド２９Ａとダミー
電極パターン３５Ａとが、ダミーワイヤ３７Ａにより連
結されている。上述した固体撮像装置は、以下述べるよ
うにして製造される。先ず、基板２１上に、導電性ある
いは絶縁性の接着剤４５が、ディスペンサあるいは印刷
機を用いて塗布され、固体撮像素子２３が基板２１上に
ダイボンディングされ、熱硬化されて基板２１上に固定
される。The dummy electrode pad 29A and the dummy electrode pattern 35A are connected by a dummy wire 37A. The solid-state imaging device described above is manufactured as described below. First, a conductive or insulating adhesive 45 is applied on the substrate 21 by using a dispenser or a printing machine, and the solid-state imaging device 23 is die-bonded on the substrate 21 and heat-cured to be fixed on the substrate 21. To be done.

【００２７】次に、固体撮像素子２３の入出力信号部２
７の電極パッド２９と、基板２１上の電極パターン３５
とが、金，銅等からなる信号入出力用のワイヤ３７でワ
イヤボンディングされ、固体撮像素子２３が電極パター
ン３５に結線される。そして、この時同時に、固体撮像
素子２３のダミー電極パッド２９Ａと、基板２１上のダ
ミー電極パターン３５Ａとが、ダミーワイヤ３７Ａでワ
イヤボンディングされワイヤ保護手段４３が形成され
る。Next, the input / output signal section 2 of the solid-state image pickup device 23
7 electrode pad 29 and the electrode pattern 35 on the substrate 21.
Are wire-bonded with a signal input / output wire 37 made of gold, copper or the like, and the solid-state imaging device 23 is connected to the electrode pattern 35. At the same time, the dummy electrode pad 29A of the solid-state image pickup device 23 and the dummy electrode pattern 35A on the substrate 21 are wire-bonded with the dummy wire 37A to form the wire protection means 43.

【００２８】次に、図２の二点鎖線の部分を拡大して示
す図３に示すように、固体撮像素子２３の受光部２５お
よびこの近傍に、接着後に無色透明となる接着剤４７、
例えば、透明ジャンクションコート樹脂がディスペンサ
を用いて塗布され、保護ガラス３１が搭載され、熱硬化
される。そして、この保護ガラス３１の搭載時には、ダ
ミー電極パッド２９Ａとダミー電極パターン３５Ａと
が、ワイヤ３７でワイヤボンディングされているため、
保護ガラス３１がワイヤ３７に接触する前にダミーワイ
ヤ３７Ａに接触し、保護ガラス３１がワイヤ３７に接触
することが防止される。Next, as shown in FIG. 3 which is an enlarged view of a portion indicated by a chain double-dashed line in FIG.
For example, a transparent junction coat resin is applied using a dispenser, a protective glass 31 is mounted, and it is thermoset. When the protective glass 31 is mounted, the dummy electrode pad 29A and the dummy electrode pattern 35A are wire-bonded with the wire 37.
It is prevented that the protective glass 31 contacts the dummy wire 37A before the protective glass 31 contacts the wire 37, and the protective glass 31 contacts the wire 37.

【００２９】次に、ワイヤ３７を包むように成形性の良
好な、例えば、シリコン，エポキシ樹脂等からなるワイ
ヤ保護樹脂４９が塗布され、熱硬化される。次に、基板
２１に、電子部品３９が半田付けされ、固体撮像装置が
製造される。上述した固体撮像装置では、保護ガラス３
１の固体撮像素子２３への装着時に、保護ガラス３１の
ワイヤ３７への接触を防止するワイヤ保護手段４３を設
けたので、固体撮像素子２３の受光部２５への保護ガラ
ス３１の装着時に、保護ガラス３１がワイヤ３７に接触
することを容易，確実に防止することができる。Next, a wire protective resin 49 having good formability, such as silicon or epoxy resin, is applied so as to wrap the wire 37, and is thermally cured. Next, the electronic component 39 is soldered to the board 21, and the solid-state imaging device is manufactured. In the solid-state imaging device described above, the protective glass 3
Since the wire protection means 43 for preventing the contact of the protective glass 31 with the wire 37 is provided when the protective glass 31 is attached to the solid-state image pickup device 23 of FIG. It is possible to easily and surely prevent the glass 31 from coming into contact with the wire 37.

【００３０】そして、上述した固体撮像装置では、固体
撮像素子２３および基板２１に、信号の入出力に関与し
ないダミー電極パッド２９Ａおよびダミー電極パターン
３５Ａを形成し、ダミー電極パッド２９Ａとダミー電極
パターン３５Ａとをダミーワイヤ３７Ａにより連結して
ワイヤ保護手段４３を形成するようにしたので、保護ガ
ラス３１の固体撮像素子２３への装着時に、保護ガラス
３１がワイヤ３７に接触することをより簡易な構成で防
止することができる。In the above-described solid-state image pickup device, the dummy electrode pad 29A and the dummy electrode pattern 35A which are not involved in signal input / output are formed on the solid-state image pickup device 23 and the substrate 21, and the dummy electrode pad 29A and the dummy electrode pattern 35A are formed. And the dummy wire 37A are connected to form the wire protection means 43. Therefore, when the protective glass 31 is attached to the solid-state imaging device 23, it is possible to prevent the protective glass 31 from contacting the wire 37 with a simpler configuration. Can be prevented.

【００３１】すなわち、固体撮像素子２３および基板２
１に、信号の入出力に関与しないダミー電極パッド２９
Ａおよびダミー電極パターン３５Ａを形成することは、
設計上、電極パッド２９および電極パターン３５の個数
を単に増加することにより容易に可能であり、また、電
極パッド２９と電極パターン３５とのワイヤボンディン
グ時に、ダミー電極パッド２９Ａとダミー電極パターン
３５Ａとをダミーワイヤ３７Ａによりワイヤボンディン
グすることはワイヤボンディングの個数が増加するだけ
で非常に容易であり、ワイヤ保護手段４３を容易に形成
することが可能である。That is, the solid-state image pickup device 23 and the substrate 2
1, a dummy electrode pad 29 not involved in signal input / output
A and the dummy electrode pattern 35A are formed by
This can be easily achieved by simply increasing the number of the electrode pads 29 and the electrode patterns 35 in design, and the dummy electrode pads 29A and the dummy electrode patterns 35A can be formed when the electrode pads 29 and the electrode patterns 35 are wire-bonded. Wire bonding with the dummy wire 37A is very easy only by increasing the number of wire bondings, and the wire protection means 43 can be easily formed.

【００３２】そして、固体撮像素子２３への保護ガラス
３１の装着時に、ダミーワイヤ３７Ａに保護ガラス３１
が接触し、ダミーワイヤ３７Ａが損傷した場合にも、ダ
ミーワイヤ３７Ａは、信号の入出力に関与していないた
め、固体撮像装置の機能が損なわれることがない。従っ
て、従来のように、保護ガラス３１がワイヤ３７に接触
しないように、保護ガラス３１の搭載を非常に慎重に行
う必要がなくなり、保護ガラス３１の搭載に要する作業
時間を低減することができる。Then, when the protective glass 31 is mounted on the solid-state image pickup device 23, the protective glass 31 is attached to the dummy wire 37A.
Even when the dummy wire 37A is damaged due to contact with the dummy wire 37A, the function of the solid-state imaging device is not impaired because the dummy wire 37A is not involved in the input and output of signals. Therefore, unlike the conventional case, it is not necessary to mount the protective glass 31 very carefully so that the protective glass 31 does not come into contact with the wire 37, and the working time required for mounting the protective glass 31 can be reduced.

【００３３】図４および図５は、本発明の固体撮像装置
の第２の実施形態を示すもので、この実施形態では、固
体撮像素子２３Ａの受光部２５の左右両側に入出力信号
部２７が形成されている。そして、基板２１の左右両側
には、入出力信号部２７に対向して電極パターン３５が
形成されている。4 and 5 show a second embodiment of the solid-state image pickup device of the present invention. In this embodiment, input / output signal sections 27 are provided on both left and right sides of the light-receiving section 25 of the solid-state image pickup element 23A. Has been formed. Electrode patterns 35 are formed on the left and right sides of the substrate 21 so as to face the input / output signal section 27.

【００３４】また、保護ガラス３１の左右両側にワイヤ
保護手段４３が配置されている。そして、基板２１の上
側に電子部品３９およびコネクタ４１が配置されてい
る。なお、図５における二点鎖線の部分は、図３と同様
に形成されている。そして、この実施形態において第１
の実施形態と同一の部材には、同一の符号を付して詳細
な説明を省略する。Wire protection means 43 are arranged on both left and right sides of the protective glass 31. Then, the electronic component 39 and the connector 41 are arranged on the upper side of the substrate 21. The portion of the chain double-dashed line in FIG. 5 is formed similarly to FIG. And in this embodiment, the first
The same members as those in the above embodiment are designated by the same reference numerals, and detailed description thereof will be omitted.

【００３５】この実施形態においても、第１の実施形態
と同様の効果を得ることができる。そして、この実施形
態では、保護ガラス３１の左右両側にワイヤ３７が配置
されることになるため、保護ガラス３１がワイヤ３７に
より接触し易くなるが、ワイヤ保護手段４３のダミーワ
イヤ３７Ａによりワイヤ３７への接触を確実に防止する
ことができる。Also in this embodiment, the same effect as that of the first embodiment can be obtained. Further, in this embodiment, since the wires 37 are arranged on both the left and right sides of the protective glass 31, the protective glass 31 is likely to come into contact with the wire 37, but the dummy wire 37A of the wire protection means 43 moves the wire 37 to the wire 37. It is possible to reliably prevent the contact.

【００３６】なお、上述した実施形態では、固体撮像素
子２３および基板２１に、信号の入出力に関与しないダ
ミー電極パッド２９Ａおよびダミー電極パターン３５Ａ
を形成し、ダミー電極パッド２９Ａとダミー電極パター
ン３５Ａとをダミーワイヤ３７Ａにより連結してワイヤ
保護手段４３を形成した例について説明したが、本発明
はかかる実施形態に限定されるものではなく、例えば、
固体撮像素子２３のダミー電極パッド２９Ａの位置に、
上方に突出し、保護ガラス３１の装着時に保護ガラス３
１に接触する突起部を形成してワイヤ保護手段としても
良い。In the above-described embodiment, the dummy electrode pad 29A and the dummy electrode pattern 35A which are not involved in signal input / output are provided on the solid-state image pickup device 23 and the substrate 21.
However, the present invention is not limited to this embodiment. For example, the present invention is not limited to this embodiment, and the dummy electrode pad 29A and the dummy electrode pattern 35A are connected by the dummy wire 37A to form the wire protection means 43. ,
At the position of the dummy electrode pad 29A of the solid-state image sensor 23,
When the protective glass 31 is attached, the protective glass 3 protrudes upwards.
The wire protection means may be formed by forming a protrusion contacting the wire 1.

【００３７】また、上下のダミー電極パッド２９Ａを結
ぶ位置に、保護ガラス３１に沿って突出部を壁状に上方
に突出して形成してワイヤ保護手段としても良い。Also, a wire protection means may be formed by projecting a wall-shaped projection upward along the protective glass 31 at a position connecting the upper and lower dummy electrode pads 29A.

【００３８】[0038]

【発明の効果】以上述べたように、請求項１の固体撮像
装置では、保護ガラスの固体撮像素子への装着時に、保
護ガラスのワイヤへの接触を防止するワイヤ保護手段を
設けたので、固体撮像素子の受光部への保護ガラスの装
着時に、保護ガラスがワイヤに接触することを容易，確
実に防止することができる。As described above, in the solid-state image pickup device of the first aspect, the wire protection means for preventing the contact of the protection glass with the wire when the protection glass is attached to the solid-state image pickup element is provided. It is possible to easily and surely prevent the protective glass from coming into contact with the wire when the protective glass is attached to the light receiving portion of the image pickup device.

【００３９】請求項２の固体撮像装置では、ワイヤ保護
手段を、固体撮像素子の入出力信号部と保護ガラスとの
間に突出部を形成して構成したので、保護ガラスの固体
撮像素子への装着時に、保護ガラスがワイヤに接触する
ことを簡易な構成で防止することができる。請求項３の
固体撮像装置では、ワイヤ保護手段の突出部を、固体撮
像素子の入出力信号部と保護ガラスとの間に複数の突起
部を形成して構成したので、保護ガラスの固体撮像素子
への装着時に、保護ガラスがワイヤに接触することをよ
り簡易な構成で防止することができる。In the solid-state image pickup device according to the second aspect of the invention, the wire protection means is formed by forming the protrusion between the input / output signal section of the solid-state image pickup device and the protective glass. It is possible to prevent the protective glass from coming into contact with the wire at the time of mounting with a simple configuration. In the solid-state imaging device according to claim 3, since the protruding portion of the wire protection means is formed by forming a plurality of protrusions between the input / output signal portion of the solid-state imaging element and the protective glass, the solid-state imaging element of the protective glass. It is possible to prevent the protective glass from coming into contact with the wire at the time of mounting on the wire with a simpler configuration.

【００４０】請求項４の固体撮像装置では、固体撮像素
子および基板に、信号の入出力に関与しないダミー電極
パッドおよびダミー電極パターンを形成し、ダミー電極
パッドとダミー電極パターンとをダミーワイヤにより連
結するようにしたので、保護ガラスの固体撮像素子への
装着時に、保護ガラスがワイヤに接触することをより簡
易な構成で防止することができる。In the solid-state image pickup device according to a fourth aspect of the present invention, dummy electrode pads and dummy electrode patterns that are not involved in signal input / output are formed on the solid-state image pickup element and the substrate, and the dummy electrode pads and the dummy electrode patterns are connected by dummy wires. By doing so, it is possible to prevent the protective glass from coming into contact with the wire with a simpler configuration when the protective glass is attached to the solid-state imaging device.

【図面の簡単な説明】[Brief description of drawings]

【図１】本発明の固体撮像装置の第１の実施形態を示す
上面図である。FIG. 1 is a top view showing a first embodiment of a solid-state imaging device of the present invention.

【図２】図１の断面図である。FIG. 2 is a cross-sectional view of FIG.

【図３】図２の二点鎖線の部分を拡大して示す説明図で
ある。FIG. 3 is an explanatory diagram showing an enlarged view of a two-dot chain line portion in FIG.

【図４】本発明の固体撮像装置の第２の実施形態を示す
上面図である。FIG. 4 is a top view showing a second embodiment of the solid-state imaging device of the present invention.

【図５】図４の断面図である。5 is a cross-sectional view of FIG.

【図６】従来の固体撮像装置を示す上面図である。FIG. 6 is a top view showing a conventional solid-state imaging device.

【図７】図６の断面図である。7 is a cross-sectional view of FIG.

【図８】図６のワイヤの接続部が電極パッドから剥離し
た状態を示す説明図である。FIG. 8 is an explanatory view showing a state in which the wire connection portion of FIG. 6 is peeled off from the electrode pad.

【図９】図７のワイヤの接続部が電極パッドから剥離し
た状態を拡大して示す説明図である。9 is an explanatory diagram showing an enlarged view of a state where the wire connecting portion of FIG. 7 is peeled off from the electrode pad. FIG.

【符号の説明】[Explanation of symbols]

２１ 基板 ２３ 固体撮像素子 ２５ 受光部 ２７ 入出力信号部 ２９ 電極パッド ２９Ａ ダミー電極パッド ３１ 保護ガラス ３３ 電極パターン部 ３５ 電極パターン ３５Ａ ダミー電極パターン ３７ ワイヤ ３７Ａ ダミーワイヤ ４３ ワイヤ保護手段 21 board 23 Solid-state image sensor 25 Light receiving part 27 Input / output signal section 29 electrode pads 29A dummy electrode pad 31 Protective glass 33 Electrode pattern part 35 electrode pattern 35A dummy electrode pattern 37 wires 37A dummy wire 43 Wire protection means

Claims (4)

【特許請求の範囲】[Claims] 【請求項１】 受光部および入出力信号部を備えた固体
撮像素子と、 前記固体撮像素子の受光部を覆って装着される保護ガラ
スと、 前記固体撮像素子が装着され前記入出力信号部に対向す
る位置に電極パターン部が形成される基板と、 前記入出力信号部に配置される複数の電極パッドと前記
電極パターン部に配置される複数の電極パターンとを接
続するワイヤと、 を備えた固体撮像装置において、 前記保護ガラスの前記固体撮像素子への装着時に、前記
保護ガラスの前記ワイヤへの接触を防止するワイヤ保護
手段を有することを特徴とする固体撮像装置。1. A solid-state image sensor including a light-receiving unit and an input / output signal unit, a protective glass mounted over the light-receiving unit of the solid-state image sensor, and the solid-state image sensor mounted on the I / O signal unit. A substrate having electrode pattern portions formed at opposing positions; a wire connecting a plurality of electrode pads arranged in the input / output signal portion and a plurality of electrode patterns arranged in the electrode pattern portion; A solid-state imaging device, comprising: wire protection means for preventing contact of the protective glass with the wire when the protective glass is mounted on the solid-state imaging device. 【請求項２】 請求項１記載の固体撮像装置において、 前記ワイヤ保護手段は、前記固体撮像素子の入出力信号
部と前記保護ガラスとの間に形成される突出部からなる
ことを特徴とする固体撮像装置。2. The solid-state image pickup device according to claim 1, wherein the wire protection means comprises a protrusion formed between an input / output signal section of the solid-state image pickup element and the protective glass. Solid-state imaging device. 【請求項３】 請求項２記載の固体撮像装置において、 前記突出部は、前記固体撮像素子の入出力信号部と前記
保護ガラスとの間に形成される複数の突起部からなるこ
とを特徴とする固体撮像装置。3. The solid-state imaging device according to claim 2, wherein the protrusion comprises a plurality of protrusions formed between the input / output signal portion of the solid-state image sensor and the protective glass. Solid-state imaging device. 【請求項４】 請求項３記載の固体撮像装置において、 前記突起部は、ダミーワイヤまたはダミーワイヤの一部
からなり、該ダミーワイヤは、前記固体撮像素子の前記
入出力信号部と前記保護ガラスとの間に形成されるダミ
ー電極パッドと、前記基板の前記電極パターン部の前記
電極パターンの並び方向の両端より外側に形成されるダ
ミー電極パターンとに連結されていることを特徴とする
固体撮像装置。4. The solid-state image pickup device according to claim 3, wherein the protrusion comprises a dummy wire or a part of a dummy wire, and the dummy wire includes the input / output signal section of the solid-state image sensor and the protective glass. Solid-state imaging characterized by being connected to a dummy electrode pad formed between the electrode pattern and a dummy electrode pattern formed outside both ends of the electrode pattern portion of the substrate in the arrangement direction of the electrode pattern. apparatus.
JP2001240196A 2001-08-08 2001-08-08 Solid state imaging device Pending JP2003060175A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001240196A JP2003060175A (en) 2001-08-08 2001-08-08 Solid state imaging device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001240196A JP2003060175A (en) 2001-08-08 2001-08-08 Solid state imaging device

Publications (1)

Publication Number Publication Date
JP2003060175A true JP2003060175A (en) 2003-02-28

Family

ID=19070847

Family Applications (1)

Application Number Title Priority Date Filing Date
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Country Link
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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009141053A (en) * 2007-12-05 2009-06-25 Denso Corp Lead frame and manufacturing method of semiconductor device
CN102933335A (en) * 2010-06-09 2013-02-13 新东工业株式会社 Iron group-based soft magnetic powder
JP2019050418A (en) * 2018-11-29 2019-03-28 株式会社ニコン Imaging apparatus
WO2024117639A1 (en) * 2022-11-30 2024-06-06 삼성전자 주식회사 Image sensor and electronic device comprising same

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009141053A (en) * 2007-12-05 2009-06-25 Denso Corp Lead frame and manufacturing method of semiconductor device
CN102933335A (en) * 2010-06-09 2013-02-13 新东工业株式会社 Iron group-based soft magnetic powder
DE112011101968T5 (en) 2010-06-09 2013-03-28 Sintokogio, Ltd. Fe group-based soft magnetic powder
KR20130079422A (en) 2010-06-09 2013-07-10 신토고교 가부시키가이샤 Iron group-based soft magnetic powder
US9190195B2 (en) 2010-06-09 2015-11-17 Sintokogio, Ltd. Fe-group-based soft magnetic powder
JP2019050418A (en) * 2018-11-29 2019-03-28 株式会社ニコン Imaging apparatus
WO2024117639A1 (en) * 2022-11-30 2024-06-06 삼성전자 주식회사 Image sensor and electronic device comprising same

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