JP2003037297A - Light-irradiating device, manufacturing method therefor, and lighting system using the device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a light-irradiating device having proper heat radiating properties. SOLUTION: This light-irradiating device 68 having a proper heat-radiating property is provided with a plurality of electrically isolated conducting paths 51, an optical semiconductor element 65 fixed firmly on a desired conducting path 51, and an insulating resin 67 which covers the element 65, and it integrally supports the conducting paths 51, and serves as a light-transmitting lens. This device 68 is also provided with a reflector 63, that can reflect light to the upper surface of the resin 67.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light irradiating device and a manufacturing method thereof, and more particularly to a light irradiating device having a good heat dissipation property, a manufacturing method thereof, and an illuminating device using the light irradiating device.

[0002]

2. Description of the Related Art First, when it is necessary to irradiate a large amount of light, an electric lamp or the like is generally used. However, the light emitting element 2 may be mounted on the printed circuit board 1 as shown in FIG. 11 for the purpose of lightness, thinness, shortness, and power saving.

The light emitting element is mainly a light emitting diode formed of a semiconductor,
Besides, a semiconductor laser or the like can be considered.

This light emitting diode 2 is provided with two leads 3 and 4, the back surface (anode electrode or cathode electrode) of the light emitting diode 5 is fixed to one lead 3 with solder or the like, and the other lead 4 is used. Are electrically connected to the electrode (cathode electrode or anode electrode) on the surface of the chip via the thin metal wire 6. In addition, the lead 3,
A transparent resin encapsulant 7 for encapsulating the chip 4, the chip 5 and the thin metal wire 6 is formed also as a lens.

On the other hand, the printed circuit board 1 is provided with electrodes 8 and 9 for supplying power to the light emitting diode 2, and the leads 3 and 4 are provided in through holes provided therein.
Is inserted, and the light emitting diode 2 is fixed and mounted via solder or the like.

For example, Japanese Patent Application Laid-Open No. 9-252651 discloses a light irradiation device using this light emitting diode.

However, since the above-described light emitting element 2 is a package in which the resin sealing body 7, the leads 3, 4 and the like are incorporated, there is a drawback that the size of the mounted substrate 1 becomes large.

Therefore, each company has developed various structures in order to realize miniaturization, thinning, and weight reduction competitively, and recently, a wafer scale CSP equivalent to a chip size, called a CSP (chip size package), or A CSP having a size slightly larger than the chip size has been developed.

FIG. 12 shows a CS which uses a glass epoxy substrate 11 as a supporting substrate and is slightly larger than the chip size.
It shows P12. Here, it is assumed that the light emitting diode 13 is mounted on the glass epoxy substrate 11.

The first surface of the glass epoxy substrate 11 is
Electrode (die pad) 14 and second electrode 15 are formed on the back surface, and a first back surface electrode 16 and a second back surface electrode 17 are formed on the back surface.
And are formed. Then, the first electrode 14 and the first back surface electrode 16 are electrically connected through the through hole TH, and similarly, the second electrode 15 and the second back surface electrode 17 are electrically connected. There is.

The bare light emitting diode 13 is fixed to the upper surface of the die pad 14, and the light emitting diode 1
The electrodes on the surface of No. 3 and the first electrode 14 are connected via the metal wiring 18. And the light emitting diode 13
A resin layer 19 is provided on the glass epoxy substrate 11 so as to cover the entire surface including.

The CSP 12 is a glass epoxy substrate 1
1 is adopted, but unlike the wafer scale CSP,
Backside electrode 16 for external connection from the light emitting diode 13
It has an advantage that it can be manufactured at a low cost because the structure extending up to is simple.

The method of manufacturing the CSP 12 will be described. First, as shown in FIG. 12 (A), a glass epoxy substrate 11 is prepared as a base material (support substrate), and an insulating adhesive is applied to both surfaces of the glass epoxy substrate 11. Copper foil (hereinafter referred to as Cu foil)
20 and 21 are crimped.

Next, as shown in FIG. 12B, Cu on the region where the first electrode (die pad) 14, the second electrode 15, the first back surface electrode 16 and the second back surface electrode 17 are formed. An etching resistant resist film 22 is formed on the foils 20 and 21, and the Cu foils 20 and 21 are patterned using the resist film 22. The patterning step may be performed separately for the front and back.

Subsequently, as shown in FIG. 12C, a hole for the through hole TH is formed in the glass epoxy substrate by using a drill or a laser, and the hole is plated to form the through hole TH. To do. This through hole T
The H electrically connects the die pad 14 and the first back surface electrode 16, and the second electrode 15 and the second back surface electrode 17 electrically.

Further, as shown in FIG. 12D, Ni plating and Au are formed on the die pad 14 which will be a bonding post.
After plating, the back surface (anode electrode or cathode electrode) of the light emitting diode 13 is die-bonded.

Finally, the electrode (cathode electrode or anode electrode) on the surface of the light emitting diode 13 and the second electrode 15
Is electrically connected to the resin layer 19 through a thin metal wire 18.
It is covered with.

If necessary, dicing is performed to separate the individual electric circuit elements. In FIG.
Although only one light emitting diode 13 is provided on the glass epoxy substrate 11, a large number of light emitting diodes 13 are actually provided in a matrix. Therefore, finally, it is individually separated by a dicing device.

By the above manufacturing method, a CSP type electric circuit element employing the supporting substrate (glass epoxy substrate) 11 is completed. This manufacturing method is the same even if a flexible sheet is used as the supporting substrate.

[0020]

Here, in FIG. 12, the light emitting diode 13, the first electrode 14, the second electrode 15, the first back surface electrode 16, the second back surface electrode 17, and the thin metal wire 18 are However, it is a component necessary for electrical connection to the outside and protection of the chip, but it was difficult to provide an electric circuit element that realizes downsizing, thinning, and weight reduction with only these components.

Further, the glass epoxy substrate 11 serving as a supporting substrate is essentially unnecessary. However, due to the manufacturing method, it is used as a support substrate to bond the electrodes together,
The glass epoxy substrate 11 could not be removed.

Therefore, the use of the glass epoxy substrate 11 raises the cost, and further, the glass epoxy substrate 11 is thick, so that it becomes thick as a circuit element, and there is a limit in achieving miniaturization, thinning, and weight reduction. was there.

Further, in the glass epoxy substrate 11 and the ceramic substrate, the through hole forming step for connecting the electrodes on both sides is indispensable, which causes a problem that the manufacturing process becomes long.

Further, since the heat dissipation of the substrate itself is poor, there is a problem that the temperature rises as a whole. Therefore, there is a problem that the temperature of the chip itself also rises and the driving capability decreases.

Further, in the light emitting diode, light is emitted also from the side surface thereof, and there is light that is directed to the substrate side. But,
Since the board is a printed circuit board or a glass epoxy board,
There is also a problem that all the light cannot be efficiently emitted upward.

[0026]

SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned problems, and has a plurality of electrically isolated conductive paths, an optical semiconductor element fixed on a desired conductive path, and the optical semiconductor. Provided is a light irradiating device having good heat dissipation, which includes a resin that covers the element and integrally supports the conductive path and is capable of transmitting light, and a reflector fixed to the upper surface of the resin that covers the optical semiconductor element. It is characterized by

Further, a plurality of conductive paths electrically separated by the separation groove, an optical semiconductor element fixed on a desired conductive path, and the separation groove covering the optical semiconductor element and between the conductive paths are formed. To provide a light irradiating device including a resin that is filled with light and that exposes only the back surface of the conductive path and integrally supports the resin, and a reflector fixed to an upper surface of the resin that covers the optical semiconductor element. Thus, the back surface of the conductive path can be used for connection to the outside and the through hole can be eliminated, thus solving the above-mentioned problem.

Further, a step of preparing a conductive foil and forming a conductive groove by forming a separation groove shallower than the thickness of the conductive foil in the conductive foil except at least a region to be a conductive path, and the desired conductive A step of fixing an optical semiconductor element on the road; a step of coating the optical semiconductor element with a resin capable of transmitting light so as to fill the separation groove; and a resin upper surface for coating the optical semiconductor element. By providing a method of manufacturing a light irradiation device comprising a step of fixing a reflector and a step of removing the conductive foil on the side where the separation groove is not provided, the conductive foil forming a conductive path can be started. It is a material, the conductive foil has a supporting function until it is coated with a resin that can transmit light, and after coating, the resin that can transmit light has a supporting function, which makes it possible to eliminate the need for a supporting substrate. Has been resolved.

Further, by providing the step of fixing the reflector on the upper surface of the resin covering the optical semiconductor element, it is possible to irradiate the light below the optical semiconductor element.

Therefore, when the above-mentioned light irradiating device is used, for example, for illuminating the backlight of a liquid crystal display panel, it is possible to save the installation space for installing the illuminating device for the backlight.

After covering each of the light irradiation devices with a resin capable of transmitting light so as to fill the separation groove, the conductive foil on the side where the separation groove is not provided is removed to expose the resin. And, by having a step of separating each light irradiation device coated with a resin that can transmit the light, each light irradiation device is not separated until the final stage,
Therefore, the conductive foil can be used as one sheet for each step, and the workability is good.

[0032]

BEST MODE FOR CARRYING OUT THE INVENTION A first embodiment of a light irradiation apparatus and a method for manufacturing the same according to the present invention will be described below with reference to the drawings.

In FIG. 1, reference numeral 61 denotes a sheet-shaped conductive foil, the material of which is selected in consideration of the adhesiveness, bonding property and plating property of the brazing material, and the material is copper (Cu).
Conductive foil mainly made of Al, conductive foil mainly made of aluminum (Al) or iron (Fe) -nickel (Ni), C
A conductive foil made of an alloy such as u-Al or Al-Cu-Al is used.

The thickness of the conductive foil is preferably about 10 μm to 300 μm in consideration of later etching.
A 50 μm copper foil was adopted. However, it is basically good if it is 300 μm or more or 10 μm or less. As described below,
It suffices if the separation groove 64 that is shallower than the thickness of the conductive foil 61 can be formed.

The sheet-shaped conductive foil 61 may be prepared by rolling it in a roll with a predetermined width, and may be conveyed to each step described later, or a conductive foil cut into a predetermined size may be used. It may be prepared and conveyed to each step described later.

Then, half-etching is performed by using the photoresist film 60 (the photoresist film on the back surface side is not shown) formed on the front surface and the back surface (not shown) of the conductive foil 61 as a mask. A predetermined area of the conductive foil 61 is half-etched to form a separation groove 64. The depth of the separation groove 64 formed by this etching is, for example, 80 μm, and the side surface thereof is a rough surface, so that the adhesiveness with the insulating resin 67 that can transmit light described later is improved.

It is also possible to form an Ag coating film 62, which will be described later, on the conductive foil 61 and then perform half etching using a photoresist film formed so as to completely cover the Ag coating film 62 as a mask. .

The sectional shape of the side wall of the separation groove 64 has a different structure depending on the removing method. For this removing step, wet etching, dry etching, laser evaporation, dicing, or the like can be adopted.

For example, in the case of wet etching, ferric chloride or cupric chloride is mainly used as the etchant, and the conductive foil 61 is dipped in the etchant or showered with the etchant. . Since the wet etching is generally non-anisotropic, the side surface has a curved structure.

Furthermore, in the case of dry etching, anisotropic or non-anisotropic etching is possible. Currently C
It is said that it is impossible to remove u by reactive ion etching, but it can be removed by sputtering. Also,
Etching can be anisotropic or non-anisotropic depending on the sputtering conditions.

Further, in the laser, the separation groove can be formed by directly applying the laser beam, and in this case, the side surface of the separation groove 64 is rather straight.

Furthermore, although it is impossible to form a bent complicated pattern by dicing, it is possible to form a grid-like separation groove.

Next, referring to FIG. 2, a predetermined area on the front surface and the back surface of the conductive foil 61 is plated.
In the present embodiment, a film made of silver (Ag) plating (hereinafter referred to as Ag film 62) is formed as the conductive film 62, but the present invention is not limited to this, and other materials include For example, gold (Au), Ni, Al, palladium (Pd), or the like. Moreover, these corrosion-resistant conductive coatings have the characteristic that they can be used as they are as die pads and bonding pads. Furthermore, Ag coating 6
2 may be formed only on the surface of the conductive foil 61.

For example, the Ag coating 62 adheres to Au and also to the brazing material. Therefore, Au on the back of the chip
If the coating is covered, the Ag on the conductive path 51 will be kept as it is.
The chip can be thermocompression-bonded to the coating 62, and the chip can be fixed via a brazing material such as solder. Further, since Au thin wires can be adhered to the Ag conductive coating, wire bonding is also possible.

Further, by forming the Ag coating 62 on the conductive foil 61, the light emitted from the optical semiconductor element 65 is reflected upward by the Ag coating 62, and the luminous efficiency in the upward direction is improved.

However, when the Ag coating 62 is formed in a wide area, when the conductive foil 61 having the optical semiconductor element 65, which will be described later, is resin-sealed with the insulating resin 67,
The area where the conductive foil 61 and the insulating resin 67 are in contact with each other is reduced, which causes peeling. This is because the Ag coating 62 has a higher contact ratio than the conductive foil 61 made of Cu and the insulating resin 67.
This is because the contact rate between the insulating resin 67 and the insulating resin 67 is low. Therefore, the formation region of the Ag coating 62 is arbitrarily set in consideration of the adhesion between the conductive foil 61 and the insulating resin 67 and the reflection efficiency of the light from the light irradiation device by the Ag coating 62.

With the Ag coating 62 formed, the conductive foil 61 (and the Ag coating 6) is pressed by a press or the like.
By pressing 2), the Ag coating 62 becomes glossy and the irradiation (reflection) efficiency can be improved.

Subsequently, in FIG. 3, an optical semiconductor element 65 is electrically connected to and mounted on the conductive foil 61 in which the separation groove 64 is formed. Here, a light emitting diode is used as the optical semiconductor element 65, and the optical semiconductor element 65 is die-bonded onto a first conductive electrode (die pad) 51A described later, and the surface of the optical semiconductor element 65 and the second conductive electrode are connected. 5
1B is wire-bonded with the thin metal wire 66. At this time, in the step of forming the isolation trench 64 shown in FIG. 1, the optical semiconductor element 65 has a margin for die bonding (first conductive electrode (die pad) 51).
A) Further, since the conductive foil 61 is processed so that the thin metal wire 66 leaves a margin for wire bonding (second conductive electrode 51B), it is irradiated upward from the optical semiconductor element 65 as described later. The reflected light is reflected by the reflector 63 described later.
Thus, when the light is reflected downward from the optical semiconductor element 65, the range through which light passes is widened.

Next, in FIG. 4, the optical semiconductor element 65 on the conductive foil 61 is sealed and covered with an insulating resin 67 capable of transmitting the light emitted from the optical semiconductor element 65. To do. In this step, the optical semiconductor element 65 is formed by transfer molding using a mold (not shown).
The conductive foil 61 including the separation groove 64 is sealed with a thermosetting silicone resin or epoxy resin. As described above, the resin needs to be capable of transmitting light,
A so-called transparent resin, or a resin that is opaque but can transmit light of a predetermined wavelength is used.

Here, the resin 67 capable of transmitting the light is
In order to collect as much light of the optical semiconductor element 65 as possible and irradiate it upward, the lens has a convex lens shape and has a dome shape. The thickness of the insulating resin 67 (lens) that covers the surface of the conductive foil 61 and can transmit light may be increased or decreased in consideration of strength. The shape of the resin 67 is not limited to the dome shape.

In the description of the present embodiment, only one optical semiconductor element 65 is shown, but in reality, a large number of optical semiconductor elements 65 are provided in a matrix, and the light can be transmitted. When coating each optical semiconductor element 65 with the resin 67, each optical semiconductor element 65 is individually molded. That is, when the resin 67 that can transmit the light is molded, due to the nature of the resin 67 that can transmit the light, if a filler used for warpage prevention is mixed in the resin, the light is diffusely reflected. Since the filler cannot be used, it is necessary to individually mold each optical semiconductor element 65 (each light irradiation device 68 described later).

Then, in FIG. 5, the reflector 63 is formed so as to cover the upper surface of the insulating resin 67 which can transmit the light and covers the optical semiconductor element 65. This reflector 63
Is for reflecting the light emitted from the upper surface of the optical semiconductor element 65 by the reflector 63 to reflect the light to the lower side of the optical semiconductor element 65.

Here, in the present embodiment, as the reflector 63, an insulating resin (for example, a white resin) capable of reflecting light is used, and the upper surface of the resin 67 capable of transmitting the light is made of the white resin. It is covered with resin. At this time, the cross-sectional shape of the reflector 63, which reflects the shape of the resin 67 capable of transmitting light (dome shape), becomes like an umbrella of a lighting fixture, and reflects the light from the optical semiconductor element 65 more efficiently. Can be made.

The reflector 63 is not limited to the above-mentioned white resin, and is reflected on the upper surface of the resin 67 that can transmit the light, such as a metal foil or a glass plate that can reflect the light such as Al. It may be formed by fixing a film formed of a material.

Further, as described above, in the present embodiment, when each optical semiconductor element 65 is covered with the resin 67 capable of transmitting light, each optical semiconductor element 65 is individually molded. For example, when a resin capable of reflecting light is molded as the reflector 63, each optical semiconductor element 65 may be molded together. That is, when the resin 67 that can transmit the light is molded, due to the nature of the resin 67 that can transmit the light, if a filler used for warpage prevention is mixed in the resin, the light is diffusely reflected and used. However, it is not possible to mix the filler into the resin capable of reflecting the light, so that the light can be reflected from the frame (conductive foil 61) by the action of the filler even if they are collectively molded. Matches the coefficient of thermal expansion with the resin.

The feature of this step is that the conductive foil 61 serves as a supporting substrate until the insulating resin capable of reflecting light is coated. Since the heat dissipation is better than that of the conventional structure (see FIG. 11) in which the light emitting element 2 is mounted on the printed circuit board 1, the driving capability can be improved.

Furthermore, in the present invention, the conductive foil 61 serving as the supporting substrate is a material required as an electrode material, and therefore has the advantage that the constituent materials can be omitted as much as possible and the cost can be reduced.

Further, since the separation groove 64 is formed to be shallower than the thickness of the conductive foil 61, the conductive foil 61 is not individually separated as the conductive path 51. Therefore, when the sheet-shaped conductive foil 61 is integrally handled, the insulating resin 67 capable of transmitting light is molded, and the insulating resin (reflector 63) capable of reflecting light is further molded. There is an advantage that the work of mounting to the type is very simple.

Further, in FIG. 6, there is a step of chemically and / or physically removing the back surface of the conductive foil 61 to separate it as the conductive path 51. Here, this removing step is performed by polishing, grinding, etching, laser metal evaporation, or the like.

In the present embodiment, the conductive foil 61 and the Ag film 62 on the back surface are wet-etched by using the photoresist film (not shown) formed on the Ag film 62 as a mask, and the conductive film under the separation groove 64 is electrically conductive. The foil 61 is shaved to expose the insulating resin 67 capable of transmitting light to separate the conductive paths 51. As a result, the surface of the conductive paths 51A and 51B (first conductive electrode and second conductive electrode) is exposed from the insulating resin 67 that can transmit light.

The back surface of the conductive foil 61 may be scraped by about 50 to 60 μm by a polishing device or a grinding device to expose the insulating resin 67 capable of transmitting light from the separation groove 64. In this case, the insulating resin 67 is about 40 μm. The conductive paths 51 having a thickness are separated and separated. Further, the entire surface of the conductive foil 61 may be wet-etched before the light-transmitting insulating resin 67 is exposed, and then the entire surface may be ground by a polishing or grinding device to expose the light-transmitting insulating resin 67. . In this case, the conductive path 51 is embedded in the insulating resin 67 that can transmit light, and the back surface of the insulating resin 67 that can transmit light and the conductive path 51.
It is possible to realize a flat light irradiating device whose back surfaces are substantially aligned.

Furthermore, when the back surface of the conductive foil 61 is ground by the above-mentioned polishing device or grinding device to separate the respective conductive paths 51, the exposed conductive paths 51 are necessary.
Alternatively, a conductive material such as solder may be applied to the above to prevent the conductive path 51 from being oxidized.

Then, as shown in FIG. 7, the adjacent light irradiation devices 68 are individually separated by using a dicing device,
There is a step of completing the light irradiation device 68.

Here, this separation step can be realized by cutting, chocolate break or the like in addition to dicing. Here, when the chocolate break is adopted, as shown in FIG.
A copper piece 6 is formed from both ends of the insulating resin 67 that is transparent to light and covers the light irradiating device 68 by a press machine indicated by a chain line.
9 is peeled off, and each light irradiation device 68 is separated. In this case, there is also an advantage that workability is good because deburring processing on the back surface is unnecessary as compared with dicing, cutting and the like.

The feature of this manufacturing method is that the insulating path 67 (and the reflector 63) capable of transmitting light can be utilized as a support substrate to separate the conductive paths 51. The insulating resin 67 capable of transmitting light is a necessary material for embedding the conductive path 51, and does not require a substrate dedicated to support during the manufacturing process. Therefore, it has a feature that it can be manufactured with a minimum amount of material and the cost can be reduced.

An embodiment in which the light irradiation device 68 is used as a lighting device for a backlight of a liquid crystal display panel will be described below with reference to the drawings.

FIG. 9A is a cross-sectional view for explaining the structure of a main part of a general liquid crystal display panel. The upper glass substrate 81 is shown in FIG.
And the lower glass substrate 82 are arranged so as to face each other, and liquid crystal (not shown) is injected between the both glass substrates 81 and 82 via a shield resin 83. Then, the liquid crystal display panel is irradiated with the light from the fluorescent lamp 85 via the light guide plate 84 made of an acrylic plate.

On the other hand, in the present invention, as shown in FIG. 8A, the light irradiation device 68 is used instead of the fluorescent lamp 85.
To use.

That is, as shown in FIG. 8A, the upper glass substrate 81 and the lower glass substrate 82 are arranged so as to face each other, and liquid crystal (not shown) is shielded between the both glass substrates 81 and 82. It is injected through the resin 83. Then, the liquid crystal display panel is irradiated with the light from the light irradiation device 68 through the light guide plate 84 made of an acrylic plate.

Here, the electrodes 51A and 51B on the back surface of the light irradiation device 68 and the electrodes (ITO electrodes) 86A and 86B formed on the back surface of the lower glass substrate 82 are connected by soldering.

In this embodiment, the liquid crystal display panel is irradiated with the light from the light irradiating device 68 (photodiode) instead of the light from the conventional fluorescent lamp 85, so that the flicker of light can be reduced and the liquid crystal screen can be seen more easily. There is an advantage that At this time, since the reflector 63 is formed on the upper surface of the resin 67 that covers the optical semiconductor element 65, the light from the optical semiconductor element 65 is not irradiated below the light guide plate 84. The irradiation efficiency may be further improved by forming the reflector 63 also on the side surface of the light irradiation device 68 that does not face the light guide plate 84.

FIG. 8B shows another embodiment of the illuminating device used for the backlight, in which the electrodes (ITO electrodes) 86A and 86B formed on the back surface of the lower glass substrate 82 are provided on the back surface of the light irradiating device 68. The electrodes 51A and 51B are connected to each other, and the light reflected by the reflector 63 is applied to the liquid crystal through the lower glass substrate 82. In this case, compared with the embodiment shown in FIG. 8 (A), the light guide plate 84 can be eliminated, the cost can be reduced, and the size, thickness and weight can be reduced.

FIG. 8C shows another embodiment of the illuminating device, in which each electrode (IT) formed on the back surface of the lower glass substrate 82.
An illuminating device in which a plurality of light irradiating devices 68 are collectively molded with a resin (reflector 63A) capable of reflecting light on the O electrodes 86A and 86B (each electrode 5 on the back surface of each light irradiating device 68).
1A, 51B).

In the present invention, the light irradiation device 6 is used as described above.
Since the reflector 63 is formed on the upper surface of 8 (the upper surface of the resin 67 that covers the optical semiconductor element 65 and can transmit light), the back electrodes 51A and 51B of the light irradiation device 68 are directly connected to the lower surface of the lower glass substrate 82. Since it can be connected to each of the electrodes 86A and 86B formed in, the space can be saved.

Hereinafter, it will be described with reference to FIG. 9B that the present embodiment has a structure advantageous for the above space saving.

That is, FIG. 9B shows a structure in which the light irradiation device 68 does not have the reflector 63 (light irradiation device 68).
FIG. 9 is a cross-sectional view for explaining a main part configuration of the liquid crystal display panel in A), in which an upper glass substrate 81 and a lower glass substrate 82 are arranged to face each other, and both glass substrates 81,
A liquid crystal (not shown) is injected between the two and 82 via a shield resin 83. Then, the plurality of light irradiation devices 68A are fixed on the support substrate 88. Thus, when the illumination device for the backlight is configured by the light irradiation device 68A, the support substrate 88 is newly required, which hinders space saving. Furthermore, it is also disadvantageous in terms of size reduction, thickness reduction, and weight reduction.

Further, as shown in FIG. 10, an ITO electrode 91 is formed on the surface of the conductive foil 61 by sputtering, and Ni plating, Ni plating and Au plating (not shown) are applied on the ITO electrode 91, and the optical semiconductor element 65 is formed. Is die-bonded via solder, and the anode electrode or the cathode electrode on the optical semiconductor element 65 and the ITO electrode 91 are connected by wire bonding. Then, after forming an insulating resin 67 capable of transmitting light so as to cover the optical semiconductor device 65, a reflector 63 is formed on the upper surface thereof, and the conductive foil 61 is peeled off from the sealing light irradiating device 68B with the resin 67. To do. As a result, the ITO electrode 91 is exposed on the back surface of the optical semiconductor device 65, and the surface of the ITO electrode 91 is plated with Ni or Ni and Au.

At this time, the ITO electrode 91 is a transparent electrode and is reflected by the reflector 63 by setting the formation range of the Ni plating, Ni plating, and Au plating to the minimum range required for die bonding and wire bonding. The efficiency with which light passes under the optical semiconductor device 65 is improved.

[0079]

As is apparent from the above description, in the present invention, the optical semiconductor element, the conductive path (conductive electrode), the resin capable of transmitting light, and the reflector capable of reflecting light are constituted by the minimum necessary amount. It becomes a light irradiation device with no waste of resources. Therefore, there is no extra component until completion, and it is possible to realize a light irradiation device capable of significantly reducing the cost.

Further, since only the back surface of the conductive path is exposed from the resin capable of transmitting light, the back surface of the conductive path can be immediately used for connection to the outside, and the back surface electrode and through hole of the conventional structure are unnecessary. Has the advantage that Further, the heat dissipation can be improved as compared with the conventional structure in which the optical semiconductor element is mounted on the printed circuit board, and the driving ability of the optical semiconductor element can be improved.

Further, as described above, since the back surface of the conductive path can be immediately used for connection with the outside, a reflector is provided on the upper surface of the resin that covers the optical semiconductor element and can transmit light. As a result, light is emitted toward the back surface of the optical semiconductor element through the reflector, and therefore, by adopting the above-mentioned light irradiation device as a lighting device for a backlight used in, for example, a liquid crystal display panel, the liquid crystal is The back electrode of the light irradiation device can be directly fixed to the electrode formed on the lower glass substrate to be injected, and space can be saved.

Further, after covering each of the light irradiating devices with a resin capable of transmitting light so as to fill the separation groove and further forming a reflector, the conductive material on the side where the separation groove is not provided is formed. By removing the foil to a predetermined position, and having a step of separating each light irradiation device coated with a resin capable of transmitting the light, each light irradiation device is not separated until the final stage, Therefore, the conductive foil can be used as one sheet for each step, and the workability is good.

[Brief description of drawings]

FIG. 1 is a cross-sectional view illustrating a method of manufacturing a light irradiation device according to a first embodiment of the present invention.

FIG. 2 is a cross-sectional view illustrating the method of manufacturing the light irradiation device according to the first embodiment of the invention.

FIG. 3 is a cross-sectional view illustrating the method of manufacturing the light irradiation device according to the first embodiment of the present invention.

FIG. 4 is a cross-sectional view illustrating the method of manufacturing the light irradiation device according to the first embodiment of the invention.

FIG. 5 is a cross-sectional view illustrating the method of manufacturing the light irradiation device according to the first embodiment of the invention.

FIG. 6 is a cross-sectional view illustrating the method of manufacturing the light irradiation device according to the first embodiment of the invention.

FIG. 7 is a cross-sectional view illustrating the method of manufacturing the light irradiation device according to the first embodiment of the invention.

FIG. 8 is a diagram illustrating an illumination device using the light irradiation device of the present invention.

FIG. 9 is a diagram comparatively explaining the lighting device of FIG. 8 and a conventional lighting device.

FIG. 10 is a cross-sectional view illustrating an illumination device that uses a light irradiation device according to a second embodiment of the present invention.

FIG. 11 is a diagram illustrating a conventional lighting device.

FIG. 12 is a diagram illustrating a conventional lighting device.

[Explanation of symbols]

40 Lighting device 51 Conductive path (electrode) 61 Conductive foil 62 Conductive film 63 reflector 64 separation groove 65 Optical semiconductor device 66 thin metal wires 67 Resin that can transmit light 68 Light irradiation device

─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. ⁷ Identification code FI theme code (reference) H01L 23/29 F21S 1/02 G 23/31 H01L 23/30 B // F21Y 101: 02 G F term ( Reference) 2H091 FA23Z FB02 FB07 FB08 FD04 LA11 4M109 AA02 BA01 CA21 DA02 EB11 EC11 EE11 GA01 5F041 AA33 CA74 CA76 DA13 DA20 DA26 DA29 DA36 DA43 DA55 DA81 EE25 FF11

Claims (27)

[Claims] 1. A plurality of electrically isolated conductive paths, an optical semiconductor element fixed on a desired conductive path, and light that covers the optical semiconductor element and integrally supports the conductive path. And a reflector fixed to the upper surface of the resin that covers the optical semiconductor element. 2. The light irradiating apparatus according to claim 1, wherein the reflector is made of a resin capable of reflecting light. 3. The light irradiating device according to claim 1, wherein the reflector is made of a metal foil having a gloss that enables light to be reflected. 4. The light irradiation device according to claim 1, wherein the reflector is made of a glass body to which a reflective material capable of reflecting light is fixed. 5. The light irradiation device according to claim 1, wherein the plurality of conductive paths are electrically separated by a separation groove, and the separation groove is filled with the resin. 6. The light irradiation device according to claim 1, wherein the surfaces of the plurality of conductive paths are covered with the resin, and the back surfaces thereof are exposed. 7. The light irradiating device according to claim 1, further comprising connecting means for connecting the electrode of the optical semiconductor element and the other conductive path. 8. The light irradiation device according to claim 1, further comprising a conductive film formed on the upper surface of the conductive path and made of a metal material different from that of the conductive path. 9. The light irradiating device according to claim 1, wherein the conductive path is made of a conductive foil of any one of copper, aluminum, iron-nickel, copper-aluminum, and aluminum-copper-aluminum. . 10. The light irradiating apparatus according to claim 8, wherein the conductive film is a plating film made of nickel, gold, palladium, aluminum, silver or the like. 11. The light irradiating device according to claim 7, wherein the connecting unit is configured by a bonding thin wire. 12. The light irradiation device according to claim 1, wherein the conductive path is used as an electrode, a bonding pad, or a die pad region. 13. A lighting device comprising the light irradiation device according to claim 1 for illuminating a backlight of a liquid crystal display panel. 14. A lighting device for a backlight, comprising a plurality of the light irradiation device according to claim 1, the back surface of which is fixed to a transparent glass substrate so as to face the liquid crystal display panel. 15. A step of forming a plurality of conductive paths by forming a separation groove shallower than the thickness of the conductive foil in the conductive foil except at least a region to be a conductive path, and each light on the plurality of conductive paths. A step of fixing the semiconductor element, a step of covering each of the optical semiconductor elements with a resin capable of transmitting light so as to fill the separation groove, and a resin capable of transmitting light, which covers the upper surface of the optical semiconductor element. A light irradiation device comprising: a step of forming a reflector capable of reflecting light thereon; and a step of removing the conductive foil on a side where the separation groove is not provided and exposing the resin. Manufacturing method. 16. The step of forming the reflector comprises coating a resin capable of reflecting light on an upper surface of a resin which covers the upper surface of the optical semiconductor element and which can transmit light. A method for manufacturing a light irradiation device according to. 17. The step of forming the reflector forms a metal foil having a gloss capable of reflecting light on an upper surface of a resin which covers the upper surface of the optical semiconductor element and which can transmit light. The method for manufacturing a light irradiation device according to claim 15. 18. The step of forming the reflector forms a glass body in which a reflective material capable of reflecting light is fixed to an upper surface of a resin which covers the upper surface of the optical semiconductor element and which can transmit light. 16. The method for manufacturing a light irradiation device according to claim 15, wherein. 19. The method of manufacturing a light irradiation apparatus according to claim 15, further comprising the step of forming a conductive film in a predetermined region on the conductive path before the step of fixing the optical semiconductor element. Method. 20. The method further comprising the step of forming a connecting means for electrically connecting the electrode of the desired optical semiconductor element and the conductive path before the step of coating the optical semiconductor element with a resin. The method for manufacturing a light irradiation device according to claim 15, wherein the light irradiation device is manufactured. 21. The method of manufacturing a light irradiating device according to claim 15, further comprising a step of separating a plurality of the optical semiconductor elements coated with a resin capable of transmitting the light. 22. In the optical semiconductor element, a cathode electrode or an anode electrode on the back surface is electrically connected to a first conductive electrode formed of the conductive path, and an upper surface of a second conductive electrode also formed of the conductive path is formed. 2. The anode electrode or the cathode electrode is electrically connected to each other.
5. The method for manufacturing the light irradiation device according to item 5. 23. The conductive foil is made of copper, aluminum, iron-
16. The method for manufacturing a light irradiating device according to claim 15, wherein the method comprises nickel, copper-aluminum or aluminum-copper-aluminum. 24. The method of manufacturing a light irradiating device according to claim 19, wherein the conductive film is formed by plating with nickel, gold, palladium, aluminum or silver. 25. The method of manufacturing a light irradiating device according to claim 15, wherein the separation groove selectively formed in the conductive foil is formed by chemical or physical etching. 26. The method of manufacturing a light irradiating device according to claim 20, wherein the connecting means is formed by wire bonding. 27. The method for manufacturing a light irradiating device according to claim 15, wherein the light irradiating device coated with the resin capable of transmitting light is separated by dicing or by pressing.