JP2003037196A - Package for housing optical semiconductor element - Google Patents

Abstract

PROBLEM TO BE SOLVED: To solve the problem that the heat accumulated when an optical semiconductor element operates is not efficiently dispersed outside, causing thermal destruction with the optical semiconductor element. SOLUTION: The package for housing an optical semiconductor element comprises a base 1, a frame 2 of an iron-nickel-cobalt alloy or iron-nickel alloy which is fitted to the base 1 and comprises a through hole 2a and a notch 2b on the side part, a fixing member 6 which is fitted to the through hole 2a and jointed to an optical fiber member 8, a ceramic terminal 9 in which, inserted in the notch 2b, a wiring layer to which electrodes of an optical semiconductor element 4 are connected is formed, and a lid member 3 fitted to the upper surface of the frame 2. The base 1 comprises tungsten and copper, and has a 3-layer structure where upper and lower layers 1b and 1c, comprising tungsten by 25-55 wt.% and copper by 45-75 wt.%, are provided on both upper and lower surfaces of an intermediate layer 1c comprising tungsten by 70-90 wt.% and copper by 10-30 wt.%.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an optical semiconductor device housing package for housing an optical semiconductor device.

[0002]

2. Description of the Related Art Conventionally, an optical semiconductor element housing package for housing an optical semiconductor element is generally made of iron-nickel-
A base made of a metal material such as a cobalt alloy or an iron-nickel alloy and having a mounting portion on which the optical semiconductor element is mounted at the center of the upper surface, and a silver on the base body so as to surround the optical semiconductor element mounting portion. A frame made of a metal material such as an iron-nickel-cobalt alloy or an iron-nickel alloy, which is joined through a brazing material such as brazing and has a through hole and a cutout portion on its side, and a through hole or a through hole of the frame. A tubular fixing member made of a metal material such as an iron-nickel-cobalt alloy, which is attached to a frame around the hole and has a space for transmitting an optical signal therein, and the melting point of the tubular fixing member is 200 A translucent member made of amorphous glass or the like for closing the inside of a fixing member attached via a low melting point brazing material such as a gold-tin alloy of 400 to 400 ° C., and inserted into a cutout portion of the frame body. For ceramic insulators such as aluminum oxide sintered bodies From a ceramic terminal body in which each electrode of the semiconductor element is formed with a wiring layer electrically connected through a bonding wire, and a lid member attached to the upper surface of the frame body to hermetically seal the optical semiconductor element. The optical semiconductor element is mounted and fixed on the optical semiconductor element mounting portion of the base body, and each electrode of the optical semiconductor element is electrically connected to the wiring layer of the ceramic terminal body through a bonding wire. After that, a lid member is joined to the upper surface of the frame body to hermetically accommodate the optical semiconductor element inside a container composed of the base body, the frame body and the lid member, and an optical fiber member is attached to the tubular fixing member, for example, YAG welding or the like. Then, the optical semiconductor device as a product is obtained by the attachment.

In the above-mentioned package for housing an optical semiconductor element, the optical semiconductor element housed inside is driven in a high frequency region and is easily affected by external noise, so that the base body and the frame body are formed of a metal material. However, by shielding the inside of the container, external noise is prevented from affecting the optical semiconductor element. Further, the base body and the frame body are generally made of iron-nickel-cobalt alloy, iron-nickel alloy or the like in order to match the linear thermal expansion coefficient of the ceramic terminal body or the optical semiconductor element.

However, in this conventional package for accommodating an optical semiconductor element, the heat conductivity of the substrate on which the optical semiconductor element is mounted and fixed is about 20 W / m · K, and heat cannot be efficiently transmitted. Therefore, when the optical semiconductor element emits heat during operation, the heat cannot be sufficiently dissipated to the outside through the substrate, and as a result, the optical semiconductor element becomes high temperature due to the heat generated by the optical semiconductor element itself, It has the drawbacks of causing thermal destruction and causing thermal deterioration of the characteristics, resulting in malfunction.

Therefore, in order to solve the above-mentioned drawbacks, the substrate is formed of a copper-tungsten alloy or a copper-molybdenum alloy having a high thermal conductivity and a linear thermal expansion coefficient close to that of the ceramic terminal body. It is possible.

Such copper-tungsten alloy or copper-molybdenum alloy is generally obtained by firing tungsten powder or molybdenum powder to obtain a sintered porous body, and then impregnating molten copper into the pores of the sintered porous body. For example, when impregnating a sintered porous body made of tungsten with copper, a sintered porous body made of molybdenum is added in the range of 75 to 90% by weight and copper in the range of 10 to 25% by weight. When the porous body is impregnated with copper, the sintered porous body is 80 to 9
The range is 0% by weight and the range of 10 to 20% by weight of copper.

[0007]

However, in this conventional package for accommodating an optical semiconductor element, the base body is fired of tungsten powder or molybdenum powder to obtain a sintered porous body, and the inside of the pores of the sintered porous body is obtained. It is formed by impregnating it with molten copper and has a thermal conductivity of about 180 W / m · K.

Therefore, the package for storing an optical semiconductor element using the conventionally manufactured copper-tungsten alloy as a base is more heat dissipating than the package for storing an optical semiconductor element using an iron-nickel-cobalt alloy or the like as a base. However, when an optical semiconductor element that emits a larger amount of heat than the conventional one, which has a high light emission output at the time of operation, is housed, the heat generated by the optical semiconductor element can be completely released to the outside through the substrate. As a result, the optical semiconductor element has a high temperature due to the heat generated by the element itself, which causes thermal damage to the optical semiconductor element or causes a variation in the characteristics to cause a stable operation. .

The present invention has been devised on the basis of the above findings, and its object is to keep an optical semiconductor element which emits a large amount of heat at the time of operation at a high emission output and keeps the optical semiconductor element stable for a long period of time. An object of the present invention is to propose a package for storing an optical semiconductor element that can function.

[0010]

According to the present invention, a base having a mounting portion on which an optical semiconductor element is mounted is mounted on an upper surface, and the optical semiconductor element mounting portion is mounted on the base so as to surround the mounting portion. ,
A frame member made of an iron-nickel-cobalt alloy or an iron-nickel alloy having a through hole and a cutout portion in a side portion, and a fixing member attached to the through hole or the frame body around the through hole and joined to an optical fiber member. And a ceramic terminal body which is inserted into the cutout portion and in which a wiring layer to which each electrode of the optical semiconductor element is connected to the ceramic insulator is formed,
A package for accommodating an optical semiconductor element, comprising a lid member attached to the upper surface of the frame body and hermetically sealing the optical semiconductor element, wherein the base body is made of tungsten and copper, and the weight of tungsten is 70 to 90%. %, Copper 10 to 30% by weight, and an upper and lower layer of 25 to 55% by weight of tungsten and 45 to 75% by weight of copper on the upper and lower surfaces of the intermediate layer. It is what

Further, according to the present invention, a base having a mounting portion on which an optical semiconductor element is mounted is mounted on an upper surface, and the optical semiconductor element mounting portion is mounted on the base so as to surround the base and penetrates to a side portion. A frame body made of an iron-nickel-cobalt alloy or an iron-nickel alloy having a hole and a notch portion, a fixing member attached to the through hole or a frame body around the through hole, and joined to an optical fiber member, and the notch. And a ceramic terminal body in which a wiring layer for connecting each electrode of the optical semiconductor element to the ceramic insulator is formed, and the upper surface of the frame body, and the optical semiconductor element is hermetically sealed. And a lid member for storing an optical semiconductor element, wherein the base is made of molybdenum and copper, and molybdenum is formed on both upper and lower surfaces of an intermediate layer made of molybdenum of 75 to 95% by weight and copper of 5 to 25% by weight. Down from 30 to 60 wt%, copper 40
It has a three-layer structure in which upper and lower layers of 70 to 70% by weight are arranged.

According to the package for accommodating an optical semiconductor element of the present invention, the base is an intermediate layer consisting of 70 to 90% by weight of tungsten and 10 to 30% by weight of copper, and 25 to 55% by weight of tungsten on both upper and lower surfaces of the intermediate layer. Has a three-layer structure in which upper and lower layers of 45 to 75% by weight are arranged, or 30 to 60% by weight of molybdenum on both upper and lower surfaces of an intermediate layer of 75 to 95% by weight of molybdenum and 5 to 25% by weight of copper,
The upper layer on which the optical semiconductor element of the substrate is mounted has a high thermal conductivity of 250 W / mK or more because the upper and lower layers of copper are 40 to 70% by weight.
Even if the optical semiconductor device mounted on the substrate emits a large amount of heat during operation, the heat is quickly spread in the plane direction in the upper layer of the substrate and is efficiently transferred to the outside through the upper layer, the intermediate layer and the lower layer of the substrate in sequence. It can be well and surely dissipated, whereby the optical semiconductor element is always kept at an appropriate temperature, and the optical semiconductor element can be stably and normally operated for a long period of time.

Further, according to the package for accommodating an optical semiconductor device of the present invention, tungsten is 25 to 55% by weight on both upper and lower surfaces of an intermediate layer of 70 to 90% by weight of tungsten and 10 to 30% by weight of copper. 45 to 7 copper
A three-layer structure in which upper and lower layers of 5% by weight are arranged, or 30 to 60% by weight of molybdenum and 40 to 40% of copper on the upper and lower surfaces of an intermediate layer of 75 to 95% by weight of molybdenum and 5 to 25% by weight of copper. It has a three-layer structure in which upper and lower layers of 70 wt% are arranged, and an intermediate layer having a small coefficient of linear thermal expansion is sandwiched between upper and lower layers having a large coefficient of linear thermal expansion, and the coefficient of linear thermal expansion of the entire substrate is iron-nickel-cobalt alloy. Since the linear thermal expansion coefficient is approximated to the linear thermal expansion coefficient of a frame body made of iron, nickel alloy, or a ceramic terminal body made of a ceramic insulator such as an aluminum oxide sintered body or a glass ceramic sintered body, a frame body or a ceramic body is formed on the substrate. Even if heat is applied to the base body and the frame body or the ceramic terminal body when attaching the terminal body or when the optical semiconductor element is activated, etc. Large that the thermal stress is generated not, thereby hermetically sealing the cavity for accommodating the optical semiconductor element is always completely due to the difference in linear thermal expansion coefficient of the person,
It is possible to operate the optical semiconductor element stably and normally.

[0014]

BEST MODE FOR CARRYING OUT THE INVENTION The present invention will now be described in detail with reference to the embodiments shown in the accompanying drawings. 1 and 2 show an embodiment of a package for storing an optical semiconductor element according to the present invention, in which 1 is a base, 2 is a frame, and 3 is a lid member. The base body 1, the frame body 2 and the lid member 3 constitute a container 5 for hermetically housing the optical semiconductor element 4 therein.

The substrate 1 has a mounting portion 1a on the upper surface of which the optical semiconductor element 4 is mounted, and the optical semiconductor element 4 is attached to the mounting portion 1a.

The substrate 1 functions as a support member for supporting the optical semiconductor element 4, and also absorbs heat generated by the optical semiconductor element 4 during operation, and efficiently dissipates the heat into the atmosphere to keep the optical semiconductor element 4 at all times. It has the effect of keeping it at an appropriate temperature.

The substrate 1 is composed of tungsten and copper, and is manufactured by impregnating molten copper into the pores of a sintered porous body obtained by firing tungsten powder.

Further, on the outer peripheral portion of the upper surface of the base body 1, the base body 1 is provided.
Mounting part 1a on which the optical semiconductor element 4 provided on the upper surface of the mounting part 1a is mounted
The frame body 2 is attached via an adhesive such as a brazing material so as to surround the above, and a space for accommodating the optical semiconductor element 4 is formed inside the frame body 2.

The frame 2 is formed of an iron-nickel-cobalt alloy or an iron-nickel alloy, and is formed by pressing an ingot (lump) of iron-nickel-cobalt alloy or the like into a frame shape by pressing. The attachment to the base 1 is performed by brazing the upper surface of the base 1 and the lower surface of the frame body 2 with a silver brazing material.

The frame body 2 has a through hole 2a formed in its side portion, and a cylindrical fixing member 6 is attached to the inner wall surface of the through hole 2a. For example, the translucent member 7 is attached to one end.

The through hole 2a formed in the side portion of the frame body 2 acts as an attachment hole for attaching the fixing member 6 to the frame body 2, and a conventionally well-known drill is provided on the side portion of the frame body 2. It is formed into a predetermined shape by performing a drilling process.

The fixing member 6 attached to the through hole 2a of the frame body 2 acts as a base fixing member when fixing the optical fiber member 8 to the frame body 2, and at the same time, the optical semiconductor element 4 is provided.
Has a function of transmitting the excited light to the optical fiber member 8. The transparent member 7 is attached to one end of the inside thereof, and the optical fiber member 8 is attached to one end of the outside thereof.

The tubular fixing member 6 is made of a metal material such as iron-nickel-cobalt alloy or iron-nickel alloy.
For example, it is formed by pressing an ingot (lump) of iron-nickel-cobalt alloy or the like into a tubular shape by pressing.

Further, the fixing member 6 is provided at one inner end thereof,
For example, a translucent member 7 is attached, and the translucent member 7 closes the inner space of the fixing member 6 to hermetically seal the container 5 including the base body 1, the frame body 2 and the lid member 3. It has the function of holding the light and transmitting the light excited by the optical semiconductor element 4 which is transmitted through the internal space of the fixing member 6 to the optical fiber member 8 attached to the fixing member 6 as it is.

The translucent member 7 is formed of, for example, a lead-based glass containing silicon oxide or lead oxide as a main component and a borosilicate-based amorphous glass containing boric acid or silica sand as a main component. Since crystalline glass does not have a crystal axis, when the light excited by the optical semiconductor element 4 is transmitted to and received from the optical fiber member 8 through the transparent member 7, the light excited by the optical semiconductor element 4 is transmitted by the transparent member. No birefringence occurs in 7 and the light is transmitted and received as it is to the optical fiber member 8. As a result, the optical fiber member 8 for the light excited by the optical semiconductor element 4 is transmitted.
The efficiency of transmission and reception to and from the device can be increased, and the transmission efficiency of optical signals can be increased.

For attachment of the transparent member 7 to the fixing member 6, for example, a metal layer is previously attached to the outer peripheral portion of the transparent member 7, and the metal layer and the fixing member 6 are attached. Is brazed through a brazing material such as a gold-tin alloy.

Further, the frame body 2 has a cutout portion 2b formed on its side portion, and the ceramic terminal body 9 is formed in the cutout portion 2b.
Has been inserted.

The ceramic terminal body 9 comprises a ceramic insulator 10 and a plurality of wiring layers 11, and the wiring layer 11
Has a function of electrically insulating the frame body 2 from the inside to the outside of the frame body 2.
No. 0 side surface is preliminarily coated with a metal layer, and the metal layer is attached to the inner wall surface of the cutout portion 2b of the frame body 2 through a brazing material such as silver brazing so as to be inserted into the cutout portion 2b of the frame body 2. Be worn.

The ceramic insulator 10 of the ceramic terminal body 9 is made of an aluminum oxide sintered body or a glass ceramic sintered body. For example, when it is made of an aluminum oxide sintered body, aluminum oxide, silicon oxide, or magnesium oxide. , A suitable organic binder, a plasticizer, and a solvent are added to a raw material powder such as calcium oxide to form a slurry, and the slurry is made into a ceramic green sheet by employing a conventionally known doctor blade method or calender roll method ( Ceramic green sheet) is formed, and then the ceramic green sheet is appropriately punched to form a predetermined shape and, if necessary, a plurality of sheets are laminated to form a molded body. It is manufactured by firing at a temperature.

A plurality of wiring layers 11 extending from the inside to the outside of the frame body 2 are embedded in the ceramic terminal body 9, and light is provided in an area of the wiring layer 11 located inside the frame body 2. The electrodes of the semiconductor element 4 are electrically connected through the bonding wires 12, and the external lead terminals 13 connected to an external electric circuit are provided with a brazing material such as silver brazing in a region located outside the frame body 2. It is attached by brazing through.

The wiring layer 11 acts as a conductive path when connecting each electrode of the optical semiconductor element 4 to an external electric circuit, and is formed of metal powder such as tungsten, molybdenum, manganese, copper, silver or the like.

For the wiring layer 11, a metal paste obtained by adding and mixing a suitable organic binder, a solvent, etc. to a metal powder of tungsten, molybdenum, manganese, copper, silver or the like is used as a ceramic green sheet for the ceramic insulator 10. The ceramic insulator 10 is formed by printing and applying a predetermined pattern in advance by using a conventionally known printing method such as a screen printing method.

It is to be noted that the exposed surface of the wiring layer 11 is formed by depositing a metal such as nickel and gold, which has excellent corrosion resistance and wettability with a brazing material, to a thickness of 1 μm to 20 μm by a plating method. The oxidative corrosion of the wiring layer 11 can be effectively prevented and the brazing of the external lead terminal 13 to the wiring layer 11 can be strengthened. Therefore, it is preferable that the exposed surface of the wiring layer 11 is coated with a metal such as nickel and gold having excellent corrosion resistance and wettability with the brazing material in a thickness of 1 μm to 20 μm.

On the wiring layer 11, external lead terminals 1
3 is brazed and attached via a brazing material such as silver brazing, and the external lead terminals 13 serve to electrically connect the respective electrodes of the optical semiconductor element 4 housed inside the container 5 to an external electric circuit. None, the optical semiconductor element 4 housed inside the container 5 by connecting the external lead terminal 13 to the external electric circuit is electrically connected to the external electric circuit via the wiring layer 11 and the external lead terminal 13. Become.

The external lead terminal 13 is made of iron-nickel-
Applying a well-known metal processing method such as a rolling method or a punching method to an ingot (lump) made of a metal material such as a cobalt alloy or an iron-nickel alloy, for example, a metal such as an iron-nickel-cobalt alloy. Is formed into a predetermined shape.

Further, a lid member 3 made of a metal material such as an iron-nickel-cobalt alloy or an iron-nickel alloy is joined to the upper surface of the frame body 2, whereby the base body 1 is formed.
Thus, the optical semiconductor element 4 is hermetically sealed inside the container 5 including the frame body 2 and the lid member 3.

The lid member 3 is joined to the upper surface of the frame body 2 by welding such as the seam weld method.

In the package for accommodating an optical semiconductor element of the present invention, the substrate 1 comprises 25 to 55% by weight of tungsten on both upper and lower surfaces of an intermediate layer comprising 70 to 90% by weight of tungsten and 10 to 30% by weight of copper. It is important to have a three-layer structure in which the upper and lower layers of copper are 45 to 75% by weight.

The substrate 1 is made of tungsten 70 to 90.
Since the intermediate layer composed of 10% to 30% by weight of copper and the upper and lower surfaces of 25 to 55% by weight of tungsten and 45 to 75% by weight of copper are arranged on the upper and lower surfaces of the intermediate layer, a three-layer structure is adopted. Even if the upper layer 1b on which the optical semiconductor element 4 is mounted has a high thermal conductivity of 250 W / mK or more, even if the optical semiconductor element 4 mounted on the substrate 1 emits a large amount of heat during operation. The heat is quickly spread in the plane direction in the upper layer 1b of the substrate 1 and the upper layer 1b of the substrate 1 and the intermediate layer 1
c and the lower layer 1d can be sequentially and efficiently diffused to the outside, whereby the optical semiconductor element 4 is always at an appropriate temperature, and the optical semiconductor element 4 can be stably and normally operated for a long period of time. .

According to the package for accommodating an optical semiconductor device of the present invention, the substrate 1 has an intermediate layer of 70 to 90% by weight of tungsten and 10 to 30% by weight of copper, and 25 to 55% by weight of tungsten on the upper and lower surfaces of the intermediate layer. , Copper is 45 to 7
The upper and lower layers 1b and 1d having a large linear thermal expansion coefficient are sandwiched between the intermediate layer 1c having a small linear thermal expansion coefficient and the intermediate layer 1c having a large linear thermal expansion coefficient to form a linear thermal expansion coefficient of iron. The linear thermal expansion coefficient of the frame body 2 made of nickel-cobalt alloy or iron-nickel alloy or the ceramic terminal body 9 made of ceramic insulator 10 such as aluminum oxide sintered body or glass ceramic sintered body. Even if heat is applied to the base body 1, the frame body 2 and the ceramic terminal body 9 when the frame body 2, the ceramic terminal body 9 or the like is mounted on the base body 1 or when the optical semiconductor element 4 is operated. A large thermal stress due to the difference in linear thermal expansion coefficient between the frame body 2 and the ceramic terminal body 9 does not occur between the frame body 2 and the ceramic terminal body 9, whereby the container 5 for accommodating the optical semiconductor element 4 is formed.
The airtight sealing is always complete, and the photosemiconductor element 4 can be stably and normally operated.

The substrate 1 has an intermediate layer 1c in which the amount of tungsten is less than 70% by weight, or 90% by weight.
When it exceeds, the coefficient of linear thermal expansion of the substrate 1 greatly differs from the coefficient of linear thermal expansion of the frame body 2, and as a result,
It becomes impossible to firmly attach the frame body 2 to the base body 1. Therefore, the amount of tungsten forming the intermediate layer 1c of the substrate 1 is specified in the range of 70 to 90% by weight.

When the amount of tungsten in the upper and lower layers 1b and 1d is less than 25% by weight, in other words, copper is 75%.
If it exceeds 5% by weight, the coefficient of linear thermal expansion of the base body 1 greatly differs from the coefficient of linear thermal expansion of the frame body 2 or the ceramic terminal body 9, and the frame body 2 or the ceramic terminal body 9 is firmly attached to the base body 1. If the amount of tungsten exceeds 55% by weight, that is, if the amount of copper is less than 45% by weight, the thermal conductivity of the upper and lower layers 1b, 1d is 250.
When it cannot be made as high as W / m · K or more and a large amount of heat is generated when the optical semiconductor element 4 operates, the heat is generated by the substrate 1
Cannot be completely dissipated to the outside through
As a result, the optical semiconductor element 4 is heated to a high temperature and the optical semiconductor element 4 is heated.
If so, thermal breakdown may occur, and the characteristics may vary, making stable operation impossible. Therefore, the upper and lower layers 1b and 1d of the substrate 1 are made of tungsten 25 to 5
5% by weight and 45 to 75% by weight of copper are specified.

If the upper and lower layers 1b and 1d are formed to have substantially the same composition and thickness, the stress generated between the upper layer 1b and the intermediate layer 1c and the stress generated between the lower layer 1d and the intermediate layer 1c. Are canceled out, and the flatness of the substrate 1 is improved. As a result, the frame body 2 and the ceramic terminal body 9 can be joined to the substrate 1 extremely strongly, and the reliability of the hermetic sealing of the container 5 is further ensured. As a result, the operation reliability of the optical semiconductor element 4 housed in the container 5 can be made more stable and reliable.

Furthermore, the upper and lower layers 1b and 1d and the intermediate layer 1
c is the thickness of the upper and lower layers 1b and 1d, and X is the thickness of the intermediate layer 1.
When the thickness of c is Y, the heat generated by the optical semiconductor element 4 can be more effectively dissipated to the outside through the substrate 1 by setting the range of 0.5Y ≦ X ≦ Y. The upper and lower layers 1
When the thicknesses of b and 1d are X and the thickness of the intermediate layer 1c is Y, when 0.5Y> X, the upper and lower layers 1b and 1d having high thermal conductivity of 250 W / m · K or more are thinned and the optical semiconductor element 4 is obtained. There is a risk that the heat generated by will not be able to be efficiently dissipated to the outside, and if Y <X, the influence on the entire upper and lower base bodies 1 having a large linear thermal expansion coefficient will increase, and the linear thermal expansion coefficient of the base body 1 will increase. The frame body 2 and the ceramic terminal body 9
Since there is a risk that it will be difficult to approximate the linear thermal expansion coefficient to the upper and lower layers 1b, 1d and the intermediate layer 1c, the thickness of the upper and lower layers 1b, 1d is X, and the thickness of the intermediate layer 1c is When Y is set, the range of 0.5Y ≦ X ≦ Y is desirable.

The substrate 1 having the three-layer structure is the intermediate layer 1c.
A plate body having a predetermined thickness obtained by impregnating a predetermined amount of tungsten sintered body with a predetermined amount of copper, and a predetermined thickness obtained by impregnating a predetermined amount of tungsten sintered body serving as the upper and lower layers 1b and 1d with a predetermined amount of copper. And the upper and lower plates of the intermediate layer 1c are sandwiched between the upper and lower plates, and then in a vacuum or in a medium at a temperature about 20 ° C. higher than the melting temperature of copper (1083 ° C.). It is manufactured by stacking under pressure in a reducing atmosphere.

Thus, according to the above-mentioned package for accommodating the optical semiconductor element, the optical semiconductor element 4 is fixed on the optical semiconductor element mounting portion 1a of the base body 1 and each electrode of the optical semiconductor element 4 is bonded via the bonding wire 12. Predetermined wiring layer 1
1, the lid member 3 is joined to the upper surface of the frame body 2, the optical semiconductor element 4 is housed inside the container 5 composed of the base body 1, the frame body 2 and the lid member 3, and finally the frame body 2 The optical fiber member 8 is attached to the tubular fixing member 6 attached to the optical semiconductor device as a final product.

Next, another embodiment of the present invention will be described. In the package for storing the optical semiconductor element described above, the base 1 is 70 to 90% by weight of tungsten and 10 to 30 of copper.
The upper and lower surfaces of the intermediate layer 1c composed of 1% by weight are 25 to 55% by weight of tungsten, and the upper and lower layers 1b and 1d are composed of 45 to 75% by weight of copper. % By weight, 5 to 25% by weight of copper
The upper and lower layers 1 and 30 of molybdenum and 40 to 70% by weight of molybdenum on the upper and lower surfaces of the intermediate layer 1c.
A three-layer structure in which b and 1d are arranged may be used.

The substrate 1 comprises an intermediate layer 1c comprising 75 to 95% by weight of molybdenum and 5 to 25% by weight of copper, and an upper and lower layer comprising 30 to 60% by weight of molybdenum and 40 to 70% by weight of copper on the upper and lower surfaces of the intermediate layer 1c. In the case of a three-layer structure in which 1b and 1d are arranged, the thermal conductivity of the upper layer 1b on which the optical semiconductor element 4 of the base 1 is mounted is set to be 250 W / mK or higher and the base 1 is mounted. Even if the optical semiconductor element 4 that generates a large amount of heat is generated during operation, the heat is quickly spread in the plane direction in the upper layer 1b of the base body 1 and the upper layer 1b of the base body 1,
The intermediate layer 1c and the lower layer 1d can be sequentially and efficiently diffused to the outside, whereby the optical semiconductor element 4 can be formed.
Is always at an appropriate temperature, and the optical semiconductor element 4 can be stably and normally operated for a long period of time.

Further, the upper and lower layers of molybdenum of 30 to 60% by weight and copper of 40 to 70% by weight are disposed on both upper and lower surfaces of the intermediate layer of 75 to 95% by weight of molybdenum and 5 to 25% by weight of copper. The substrate 1 having a three-layer structure has an intermediate layer 1c having a small linear thermal expansion coefficient sandwiched between upper and lower layers 1b and 1d having a large linear thermal expansion coefficient, so that the linear thermal expansion coefficient of the entire substrate 1 is iron-nickel-cobalt alloy or iron-. Since the linear thermal expansion coefficient of the frame body 2 made of a nickel alloy or the ceramic terminal body 9 made of a ceramic insulator 10 such as an aluminum oxide sintered body or a glass ceramic sintered body is approximated to the frame body 2 on the base body 1. Even when heat is applied to the base body 1, the frame body 2, and the ceramic terminal body 9 when the ceramic terminal body 9 or the like is attached or when the optical semiconductor element 4 is operated, the base body 1, the frame body 2 and the ceramic Tsu Between the click pin member 9 is not a large thermal stress caused by the difference in linear thermal expansion coefficient between them is generated, the container 5 thereby accommodating the optical semiconductor element 4
The airtight sealing is always complete, and the photosemiconductor element 4 can be stably and normally operated.

When the amount of molybdenum in the intermediate layer 1c of the substrate 1 is less than 75% by weight or exceeds 95% by weight, the coefficient of linear thermal expansion of the substrate 1 is higher than that of the frame body 2 or the ceramic terminal body 9. This greatly differs from the linear thermal expansion coefficient, and as a result, the frame body 2 and the ceramic terminal body 9 are attached to the base body 1.
Will not be able to be firmly attached.
Therefore, the amount of molybdenum forming the intermediate layer 1c of the substrate 1 is specified in the range of 75 to 95% by weight.

When the amount of molybdenum in the upper and lower layers 1b and 1d is less than 30% by weight, in other words, when the amount of copper exceeds 70% by weight, the coefficient of linear thermal expansion of the base body 1 is that of the frame body 2 and the ceramic terminal body 9. If the frame body 2 and the ceramic terminal body 9 cannot be firmly attached to the base body 1 due to a large difference with respect to the linear thermal expansion coefficient, and the amount of molybdenum exceeds 60% by weight, in other words, 40% by weight of copper
When it is less than 250, the thermal conductivity of the upper and lower layers 1b and 1d is 250 W /
When the optical semiconductor element 4 emits a large amount of heat during operation because it cannot be made as high as m · K or more, the heat is applied to the substrate 1
Cannot be completely dissipated to the outside through
As a result, the optical semiconductor element 4 is heated to a high temperature and the optical semiconductor element 4 is heated.
If so, thermal breakdown may occur, and the characteristics may vary, making stable operation impossible. Therefore, the upper and lower layers 1b and 1d of the substrate 1 are made of molybdenum in an amount of 30 to 60.
%, Copper is specified to be 40 to 70% by weight.

Further, if the upper and lower layers 1b and 1d are formed to have substantially the same composition and thickness, the stress generated between the upper layer 1b and the intermediate layer 1c and the stress generated between the lower layer 1d and the intermediate layer 1c. Are canceled out, and the flatness of the substrate 1 is improved. As a result, the frame body 2 and the ceramic terminal body 9 can be joined to the substrate 1 extremely strongly, and the reliability of the hermetic sealing of the container 5 is further ensured. As a result, the operation reliability of the optical semiconductor element 4 housed in the container 5 can be made more stable and reliable.

Furthermore, the upper and lower layers 1b and 1d and the intermediate layer 1
c is the thickness of the upper and lower layers 1b and 1d, and X is the thickness of the intermediate layer 1.
When the thickness of c is Y, the heat generated by the optical semiconductor element 4 can be more effectively dissipated to the outside through the substrate 1 by setting the range of 0.5Y ≦ X ≦ Y. The upper and lower layers 1
When the thicknesses of b and 1d are X and the thickness of the intermediate layer 1c is Y, when 0.5Y> X, the upper and lower layers 1b and 1d having high thermal conductivity of 250 W / m · K or more are thinned and the optical semiconductor element 4 is obtained. There is a risk that the heat generated by will not be able to be efficiently dissipated to the outside, and if Y <X, the influence on the entire upper and lower base bodies 1 having a large linear thermal expansion coefficient will increase, and the linear thermal expansion coefficient of the base body 1 will increase. The frame body 2 and the ceramic terminal body 9
Since there is a risk that it will be difficult to approximate the linear thermal expansion coefficient to the upper and lower layers 1b, 1d and the intermediate layer 1c, the thickness of the upper and lower layers 1b, 1d is X, and the thickness of the intermediate layer 1c is When Y is set, the range of 0.5Y ≦ X ≦ Y is desirable.

The substrate 1 having the three-layer structure is the intermediate layer 1c.
A plate body having a predetermined thickness obtained by impregnating a predetermined amount of molybdenum sintered body with a predetermined amount of copper and a predetermined thickness obtained by impregnating a predetermined amount of molybdenum sintered body serving as the upper and lower layers 1b and 1d with a predetermined amount of copper. And the upper and lower plates of the intermediate layer 1c are sandwiched between the upper and lower plates, and the copper melting temperature (10
It is manufactured by stacking while pressurizing in a vacuum or in a neutral or reducing atmosphere at a temperature about 20 ° C. higher than (83 ° C.).

The present invention is not limited to the above-mentioned embodiments, but various modifications can be made without departing from the gist of the present invention.

[0056]

According to the package for accommodating an optical semiconductor element of the present invention, the base contains 70 to 90% by weight of tungsten,
A three-layer structure in which an upper layer and a lower layer each containing 25 to 55% by weight of tungsten and 45 to 75% by weight of copper are arranged on the upper and lower surfaces of an intermediate layer of 10 to 30% by weight of copper, or 75 to 95% by weight of molybdenum, An upper and lower layer of molybdenum of 30 to 60% by weight and copper of 40 to 70% by weight is provided on both upper and lower surfaces of an intermediate layer of 5 to 25% by weight of copper. 3
Due to the layered structure, the thermal conductivity of the upper layer on which the optical semiconductor element of the base is mounted is set to a high value of 250 W / mK or more, and a large amount of heat is generated when the optical semiconductor element mounted on the base operates. Even if the heat is emitted, the heat can be quickly spread in the plane direction in the upper layer of the substrate, and can be efficiently and reliably dissipated to the outside through the upper layer, the intermediate layer, and the lower layer of the substrate sequentially.
As a result, the optical semiconductor element is always kept at an appropriate temperature, and the optical semiconductor element can be stably and normally operated for a long period of time.

According to the package for accommodating semiconductor elements of the present invention, the base is made of 70 to 90% by weight of tungsten,
A three-layer structure in which an upper layer and a lower layer each containing 25 to 55% by weight of tungsten and 45 to 75% by weight of copper are arranged on the upper and lower surfaces of an intermediate layer of 10 to 30% by weight of copper, or 75 to 95% by weight of molybdenum, An upper and lower layer of molybdenum of 30 to 60% by weight and copper of 40 to 70% by weight is provided on both upper and lower surfaces of an intermediate layer of 5 to 25% by weight of copper. 3
It has a layered structure in which an intermediate layer having a small linear thermal expansion coefficient is sandwiched between upper and lower layers having a large linear thermal expansion coefficient, and the linear thermal expansion coefficient of the entire substrate is made of an iron-nickel-cobalt alloy or iron-nickel alloy frame or oxidation. Since the linear thermal expansion coefficient of a ceramic terminal body made of a ceramic insulator such as an aluminum-based sintered body or a glass ceramic sintered body is approximated, the frame body or the ceramic terminal body is attached to the base body or the optical semiconductor element. Even when heat is applied to the base body and the frame body or ceramic terminal body during operation of the, a large thermal stress is generated between the base body and the frame body or ceramic terminal body due to the difference in the linear thermal expansion coefficients of the two. By doing so, the airtight sealing of the space for accommodating the optical semiconductor element is always perfect, and the optical semiconductor element can be operated stably and normally.

[Brief description of drawings]

FIG. 1 is a cross-sectional view showing an embodiment of a package for storing an optical semiconductor element of the present invention.

FIG. 2 is a plan view of a package for storing an optical semiconductor element in FIG.

[Explanation of symbols]

1 ... Base 1a ... ・ Mounting part 1b ... upper layer 1c ... Middle layer 1d ... Lower layer 2 ... frame 2a ... through-hole 2b ... ・ Notch 3 ... Lid member 4 ... Optical semiconductor device 5 ... Container 6 ... Fixing member 7: Translucent member 8: Optical fiber member 9: Ceramic terminal body 10 ... Ceramic insulator

─────────────────────────────────────────────────── ─── Continuation of front page (51) Int.Cl. ⁷ Identification code FI theme code (reference) H01L 23/373 H01L 23/36 Z H01S 5/022 MF term (reference) 2H037 AA01 BA02 BA11 DA03 DA04 DA36 DA38 5F036 AA01 BA23 BB01 BD01 5F073 AB28 BA02 EA28 FA07 FA15 FA21 FA27 FA28 FA29

Claims (2)

[Claims] 1. A base body having a mounting portion on which an optical semiconductor element is mounted, and an optical semiconductor element mounting portion mounted on the base body so as to surround the mounting portion, and a through hole and a notch are formed in a side portion. A frame body made of an iron-nickel-cobalt alloy or an iron-nickel alloy having a portion, a fixing member attached to the through hole or the frame body around the through hole, and an optical fiber member is joined, and the cutout portion. And a ceramic terminal body in which a wiring layer to which each electrode of the optical semiconductor element is connected is formed on the ceramic insulator, and is attached to the upper surface of the frame body,
A package for housing an optical semiconductor element, which comprises a lid member for hermetically sealing an optical semiconductor element, wherein the base body is made of tungsten and copper, and tungsten is 70 to 90% by weight and copper is 10 to 30% by weight. 25 to 55% by weight of tungsten and 45 to 7 of copper are formed on both upper and lower surfaces of the intermediate layer.
A package for accommodating an optical semiconductor element, which has a three-layer structure in which upper and lower layers of 5% by weight are arranged. 2. A base body having a mounting portion on which an optical semiconductor element is mounted, and an optical semiconductor element mounting portion mounted on the base body so as to surround the mounting portion. A frame body made of an iron-nickel-cobalt alloy or an iron-nickel alloy having a portion, a fixing member attached to the through hole or the frame body around the through hole, and an optical fiber member is joined, and the cutout portion. And a ceramic terminal body in which a wiring layer to which each electrode of the optical semiconductor element is connected is formed on the ceramic insulator, and is attached to the upper surface of the frame body,
A package for housing an optical semiconductor element, which comprises a lid member that hermetically seals an optical semiconductor element, wherein the base body is made of molybdenum and copper, and molybdenum is 75 to 95% by weight.
30 to 60% by weight of molybdenum and 40 to 70% by weight of copper on the upper and lower surfaces of the intermediate layer composed of 5 to 25% by weight of copper
A package for housing an optical semiconductor element, which has a three-layer structure in which upper and lower layers made of