JP2002261373A - Package for storing optical semiconductor element and optical semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To dissipate heat generated from an optical semiconductor element efficiently to the outside and to secure an optical semiconductor package rigidly to an external electric circuit board by means of screws. SOLUTION: A substantially square base 1 has a part 1a, for mounting an optical semiconductor element 2 on the upper surface, and screw fixing parts 1b, in the form of a through hole or a cut, on the opposite side. On the upper and lower surfaces of a base material 1c, which is composed of a metal carbon complex comprising unilateral carbon fibers 1c-A impregnated with copper and/or silver 1c-B and is arrange in the thickness direction, a metal layer 1d comprising an adhesive layer 1d-A of chromium-iron alloy, an intermediate layer 1d-B of copper and a surface layer 1d-C of molybdenum is formed sequentially from the base material 1c side.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor laser (LD) and a photodiode (P) used in the optical communication field.
The present invention relates to an optical semiconductor element housing package for housing an optical semiconductor element such as D) and an optical semiconductor device.

[0002]

2. Description of the Related Art FIGS. 3 and 4 are perspective views and partial enlarged cross-sectional views, respectively, showing an example of a conventional package for housing an optical semiconductor element (hereinafter referred to as an optical semiconductor package) used in the field of optical communication. This optical semiconductor package includes a mounting portion 11a on which an optical semiconductor element 12 is mounted.
And a supporting member for supporting the optical semiconductor element 12 and an external electric circuit board (not shown) having a screw mounting portion 11b formed of a through hole or a notch on the opposite side.
Substrate 1 that functions as a fixing member fixed to the base
One. Further, one side has a mounting portion 13b of the input / output terminal 14 formed of a through hole or a cutout portion, and the other side has a through hole 13a serving as an optical signal path and surrounds the mounting portion 11a. And an input / output terminal 14 fitted to the mounting portion 13b.

The substrate 11 is made of unidirectional carbon fiber 11c.
-A composite material 11 in which -A is bonded by carbon 11c-B
c, for example, as the first layer, chromium (Cr)-
Iron (Fe) alloy layer 11d-A, copper (Cu) as second layer
Layer 11d-B, Molybdenum (Mo) Layer 11 as Third Layer
Metal layer 11 having a three-layer structure in which dC is sequentially laminated
d is applied. Then, it functions as a so-called heat sink, which efficiently transmits heat generated when the optical semiconductor element 12 operates to the external electric circuit board.

[0004] Specifically, the substrate 11 has unidirectional carbon fibers 11c-A arranged from the upper surface to the lower surface, and when the metal layer 11d is not adhered, the optical semiconductor element 12 has The coefficient of thermal expansion in the direction parallel to the bonding surface (mounting surface), that is, the direction perpendicular to the arrangement direction of the unidirectional carbon fibers 11c-A is about 7 ppm / ° C. (× 10 ⁻⁶ / ° C.). Even when the metal layer 11d is adhered thereto, the thermal expansion of the unidirectional carbon fibers 11c-A is very low at 10 GPa or less in the direction perpendicular to the arrangement direction of the unidirectional carbon fibers 11c-A. It will approximate the coefficient. In addition, the unidirectional carbon fiber 11c
-A has a thermal conductivity of 30 W / m · K or less in a direction parallel to the bonding surface of the optical semiconductor element 12, that is, in a direction perpendicular to the arrangement direction of the unidirectional carbon fibers 11 c -A. It is as large as 300 W / m · K or more in the arrangement direction of the carbon fibers 11c-A.

Thus, the thermal expansion coefficients of the optical semiconductor element 12 and the base 11 are close to each other, the bonding therebetween is good, and the heat generated during the operation of the optical semiconductor element 12 is selected from the upper surface to the lower surface. It will be transmitted efficiently efficiently. As a result, the optical semiconductor element 12 always has an appropriate temperature, and the optical semiconductor element 12 can be normally and stably operated for a long period of time.

The heat dissipation structure of an optical semiconductor package having such a base 11 is an LSI or FET that generates a large amount of heat.
The present invention can also be applied to a semiconductor package for accommodating the like.

[0007]

However, when the amount of heat generated during operation of the optical semiconductor element 12 is large and exceeds the limit of heat radiation due to heat transfer of the base 11, heat is stored in the base 11 and the temperature of the base 11 is reduced. Get higher. Therefore, there has been a problem that the temperature of the optical semiconductor element 12 rises and the optical semiconductor element 12 malfunctions or the optical semiconductor element 12 is thermally destroyed.

Further, when the optical semiconductor package is screwed to the external electric circuit board via the screw mounting portion 11b, the rigidity of the base 11 is very small as compared with metal, so that the screw tightening torque is increased. In some cases, the optical semiconductor package cannot be fixed to the external electric circuit board with a strong clamping force (see JP-A-2000-150746).

As a means for solving such a problem,
A portion to be screwed is made of a highly rigid metal plate, and a one-way composite material that functions as a heat sink while mounting and fixing the optical semiconductor element 12 is embedded in a through hole of the metal plate via a brazing material. A structure having such a structure has been proposed (see JP-A-2000-150745). However,
In this case, completely filling the through hole of the metal plate with the one-way composite material with the brazing material is incomplete if the size of the through hole of the metal plate and the size of the one-way composite material vary. It tends to be. That is, there has been a problem that the optical semiconductor element 12 cannot be hermetically sealed inside the optical semiconductor package.

The present invention has been completed in view of the above problems, and an object of the present invention is to provide an optical semiconductor device for efficiently dissipating heat generated by an optical semiconductor device to the outside and housing the optical semiconductor device inside an optical semiconductor package. And to operate the optical semiconductor package to the external electric circuit board firmly by screwing. Still another object is to provide an optical semiconductor device using such an optical semiconductor package.

[0011]

An optical semiconductor package according to the present invention has a mounting portion on which an optical semiconductor element is mounted on an upper surface and a screw mounting portion having a through hole or a notch on an opposite side portion. A substantially rectangular base having, and a frame attached to an upper surface of the base so as to have a mounting portion for an input / output terminal formed of a through hole or a cutout on one side and surround the mounting portion, An optical semiconductor element housing package comprising: an input / output terminal fitted to the mounting portion; and a cylindrical optical fiber fixing member fitted to a through hole formed on another side of the frame. The base is made of a metal-carbon composite composed of unidirectional carbon fibers impregnated with copper and / or silver and arranged in the thickness direction. -An adhesive layer made of iron alloy, made of copper Wherein the metal layer surface layer consisting of intermediate layer and molybdenum are laminated is formed.

According to the present invention, with such a configuration, the heat generated by the optical semiconductor device can be efficiently radiated to the outside, and the optical semiconductor device housed in the optical semiconductor package can be normally and stably operated for a long period of time. Further, the optical semiconductor package can be firmly fixed to the external electric circuit board by screwing.

In the present invention, the thickness of the adhesive layer and the thickness of the intermediate layer are preferably 5 to 30 μm, and the thickness of the surface layer is preferably 30 to 100 μm.

According to the present invention, with such a configuration, the thermal expansion coefficients of the base and the optical semiconductor element can be approximated,
The heat generated during the operation of the optical semiconductor element can be efficiently transmitted to the base.

An optical semiconductor device according to the present invention comprises: an optical semiconductor element storage package according to the present invention; an optical semiconductor element mounted and fixed to the mounting portion and electrically connected to the input / output terminal;
A lid joined to an upper surface of the frame.

The optical semiconductor device of the present invention having such a structure can provide a highly reliable optical semiconductor device using an optical semiconductor package having the above-mentioned specific effects.

[0017]

DESCRIPTION OF THE PREFERRED EMBODIMENTS The optical semiconductor package of the present invention will be described in detail below. 1 and 2 show an example of an embodiment of an optical semiconductor package of the present invention. FIG. 1 is a perspective view of the optical semiconductor package, and FIG. 2 is a partially enlarged sectional view of a base of the optical semiconductor package. .

In FIG. 1, reference numeral 1 denotes a substantially square base, 1a
Is a mounting portion of the optical semiconductor element 2, 2 is an optical semiconductor element such as an LD or PD, 3 is a frame, 3a is a through hole serving as an optical signal path provided in the frame 3, and 3b is provided in the frame 3. The mounting portion 4 of the input / output terminal 4 is an input / output terminal for inputting / outputting a high-frequency signal. The base 1, the frame 3, and the input / output terminal 4 basically form a container for housing the optical semiconductor element 2. It is composed.

FIG. 2 is a partially enlarged cross-sectional view of the base 1, in which 1c-A indicates unidirectional carbon fibers, 1c
-B is copper and / or silver impregnated in gaps (pores) of each unidirectional carbon fiber 1c-A, and 1c is composed of unidirectional carbon fiber 1c-A and copper and / or silver 1c-B. It is a substrate composed of a metal-carbon composite. 1d-
A is an adhesive layer formed on the upper and lower surfaces of the substrate 1c, 1d-B is an intermediate layer formed on the adhesive layer 1d-A, and 1d-C is a surface layer formed on the intermediate layer 1d-B. Show. The adhesive layer 1d-A, the intermediate layer 1d-B, and the surface layer 1d-C constitute a metal layer 1d.

In such a substrate 1c, 90% by volume or more of the gap between the unidirectional carbon fibers 1c-A is replaced by copper and / or silver 1c-B, and copper and / or silver 1c-B
Is 35% by volume or less of the total volume of the substrate 1c. In addition, the base material 1c has a melting point of 50 to 250 ° C.
Copper and / or silver 1c-B melted at an elevated temperature
Is pressurized and impregnated into the gap between the unidirectional carbon fibers 1c-A with a pressing device of a pressing device at a pressure of 200 kg / cm ² or more per cross-sectional area of the pressing device.

The base material 1c has a very small elasticity of about 1/70 in the direction perpendicular to the unidirectional carbon fibers 1c-A with respect to the elastic modulus in the direction parallel to the unidirectional carbon fibers 1c-A. And the coefficient of thermal expansion is such that when copper and / or silver 1c-B is silver (about 20 ppm / ° C.), its content is 35% by volume of the total volume of the substrate 1c. Is about 11.6 ppm / ° C. From this, the metal layer 1d in which the adhesive layer 1d-A, the intermediate layer 1d-B, and the surface layer 1d-C are laminated on the upper and lower surfaces of the substrate 1c from the substrate 1c side.
Is formed, thermal strain due to a difference in thermal expansion coefficient generated between the base material 1c and the metal layer 1d can be sufficiently reduced.

Specifically, the coefficient of thermal expansion of the substrate 1c can be easily derived from the volume ratio of the unidirectional carbon fibers 1c-A, copper and / or silver 1c-B to the entire volume of the substrate 1c. is there. Further, an adhesive layer 1d made of a chromium-iron alloy
-A has a thermal expansion coefficient of about 11 to 16 ppm / ° C., and the iron atoms and unidirectional carbon fibers 1 in the adhesive layer 1d-A
Since the carbon atoms in the c-A are interdiffused at a high temperature, the bonding between the base material 1c and the adhesive layer 1d-A becomes very strong.

Further, copper and / or silver 1c of the substrate 1c
When -B is copper (about 18 ppm / ° C.) and its content is 10% by volume of the total volume of the substrate 1c, about 8.1 ppm / ° C.
In this case, the unidirectional carbon fiber 1
Since the modulus of elasticity in the direction perpendicular to c-A is very small, the thermal strain generated between the base material 1c and the adhesive layer 1d-A can be sufficiently reduced, and the bonding therebetween becomes very strong. .

The bonding between the copper and / or silver 1c-B exposed on the surface of the substrate 1c after the impregnation with the copper and / or silver 1c-B and the adhesive layer 1d-A is performed by the physical effect of the anchor effect. It is very strong because of the mechanical joining.

The adhesive layer 1d-A of the metal layer 1d is made of chromium-
It is made of an iron alloy and functions as an adhesion layer that is firmly joined to the substrate 1c. The intermediate layer 1d-B is made of copper, and functions as a diffusion preventing layer that firmly joins the adhesive layer 1d-A and the surface layer 1d-C and effectively prevents mutual diffusion between the two. The surface layer 1d-C is made of molybdenum, and functions as a thermal expansion coefficient adjusting layer that approximates the thermal expansion coefficient of the substrate 1 to the optical semiconductor element 2 or the frame 3 by adjusting the thickness, and has high rigidity. Therefore, even when the thermal expansion coefficients of the optical semiconductor element 2 and the frame 3 are different from each other, it functions as a warpage deformation preventing layer for effectively preventing the base body 1 from warping.

The reason why such a metal layer 1d is formed on the upper and lower surfaces of the base material 1c is that when the base material 1c is bonded to only one surface, the base material 1c cannot sufficiently reduce the thermal stress and the base material 1 This is to cause warpage. Therefore, the metal layers 1d formed on the upper and lower surfaces of the base material 1c are preferably made of the same material and the same thickness.

The adhesive layer 1d-A and the intermediate layer 1d-
The thickness of each B is preferably about 5 to 30 μm, while
The thickness of the surface layer 1d-C is preferably about 30 to 100 μm.

If the thickness of the adhesive layer 1d-A is less than 5 μm,
Variations in the thickness of the metal foil serving as the adhesive layer 1d-A become large, and the metal foil does not function as an adhesive layer when the intermediate layer 1d-B is formed. On the other hand, if the thickness of the adhesive layer 1d-A is 3
When the thickness exceeds 0 μm, the thermal stress generated by the difference in thermal expansion coefficient between the adhesive layer 1d-A and the substrate 1c causes the substrate 1
The adhesive layer 1d-A may be peeled off from the surface c, and the adhesion to the substrate 1c is deteriorated.

When the thickness of the intermediate layer 1d-B is less than 5 μm, the variation in the thickness of the metal foil to be the intermediate layer 1d-B becomes large, and the adhesive layer 1d-A and the surface layer 1d-C are firmly connected. And does not function as a diffusion preventing layer for effectively preventing mutual diffusion between the two. On the other hand, when the thickness of the intermediate layer 1d-B exceeds 30 μm, the adhesive layer 1d
-A and the base layer 1c, the interface between the adhesive layer 1d-A and the surface layer 1
The adhesive layer 1d-A may come off at the interface with d-C.
And the adhesiveness with the surface layer 1d-C deteriorates.

Since the surface layer 1d-C is made of a material having a very high rigidity and the elasticity of the base material 1c is very low at 30 GPa or less, the thickness of the surface layer 1d-C is reduced. By adjusting, the coefficient of thermal expansion in the width direction (horizontal direction) and the thickness direction (vertical direction) of the base 1 can be approximated to that of the optical semiconductor element 2. Furthermore, since the surface layer 1d-C has very high rigidity, even if the substrate 1c
Even if the thermal expansion coefficient of the substrate 1c is different from that of the optical semiconductor element 2, the warpage of the base 1c can be effectively prevented.

If the thickness of the surface layer 1d-C is less than 30 μm, thermal distortion due to a difference in thermal expansion coefficient between the substrate 1 and the optical semiconductor element 2 cannot be effectively prevented. That is, if the thermal expansion coefficient between the base 1 and the optical semiconductor element 2 is significantly different at this thickness, the warpage of the base 1 cannot be effectively prevented,
The optical axes of the optical semiconductor element 2 and the optical fiber 7 are shifted. As a result, the optical coupling between the optical semiconductor element 2 and the optical fiber 7 is impaired, and the operability of the optical semiconductor element 2 is impaired. On the other hand, if the thickness of the surface layer 1d-C exceeds 100 μm,
Due to the difference in thermal expansion coefficient between dB and the surface layer 1d-C, their adhesion tends to be impaired. That is, the optical semiconductor element 2 is stably mounted on the mounting portion 1a.
It is difficult to improve the optical coupling efficiency between the optical fiber 7 and the optical fiber 7, and to efficiently transmit the heat generated during the operation of the optical semiconductor element 2 to the external electric circuit board.

Specifically, the metal layer 1d is composed of, for example, an adhesive layer 1d-A and an intermediate layer 1d-B made of a metal foil having a thickness of about 10 μm on the upper and lower surfaces of the substrate 1c, and a metal layer 1d-B having a thickness of about 30 μm. The surface layer 1d-C made of metal foil is sequentially placed, and then formed by applying a temperature of about 1200 ° C. for 1 hour while applying a pressure of 5 MPa (megapascal) by a vacuum hot press.

As a result, the substrate 1 has a thermal conductivity of about 400 W / m · K or more from the upper surface to the lower surface, and the surface direction (substantially horizontal direction) of the mounting portion 1a of the optical semiconductor element 2 is A thermal conductivity of about 100 W / m · K or more is obtained. Therefore, the heat generated when the optical semiconductor element 2 operates is not limited to the direction of the unidirectional carbon fiber 1c-A,
It will also be transmitted to some extent in random directions.

The base 1 has a very high rigidity because the base 1c has a structure in which the pores of the unidirectional carbon fibers 1c-A are impregnated with copper and / or silver 1c-B. Therefore, even if the base 1 having the screw mounting portion 1b formed of a through hole or a notch on the opposite side is firmly tightened by applying a torque to the external electric circuit board via the screw mounting portion 1b with a screw. Does not break. As a result, heat can be efficiently transferred from the optical semiconductor element 2 to the base 1 and the external electric circuit board.

The specific gravity of the substrate 1 is about ³ to 5 g / cm ³ , which is very light, about 1/3 to 1/5 as compared with a conventional copper-tungsten (W) alloy. . Therefore, it is very advantageous when the electronic device is mounted on an electronic device which is recently becoming smaller and lighter.

A metal layer such as a Ni layer of 0.5 to 9 μm or a gold (Au) layer of 0.5 to 5 μm is preferably deposited on the surface of the substrate 1 by plating. In addition, the substrate 1 can be effectively prevented from being oxidized and corroded, and the optical semiconductor element 2 can be firmly adhered and fixed to the upper surface of the substrate 1.

A frame 3 is attached to the outer peripheral portion of the upper surface of the base 1 via a brazing material such as silver brazing so as to surround the mounting portion 1a of the optical semiconductor element 2. A space for accommodating the optical semiconductor element 2 is formed by 1 and the frame 3.

The frame 3 is made of Fe—Ni—Co alloy or Fe
-Made of a metal material such as a Ni alloy, for example, Fe-Ni-
When made of a Co alloy, an ingot of this alloy is manufactured into a predetermined shape by subjecting the ingot to metal working such as rolling or pressing. In addition, the frame 3 is joined to the base 1 by brazing the upper surface of the base 1 and the lower surface of the frame 3 via a brazing material such as silver brazing which is a preform having an appropriate volume laid on the upper surface of the base 1. Is done. Further, in the same manner as the base 1, a 0.5 to 9 μm Ni layer or a 0.5 to 9 μm
A metal layer such as a 5 μm Au layer is preferably applied by plating.

On one side of the frame body 3, an input / output terminal 4 having a function of inputting / outputting a high-frequency signal to / from an external electric circuit board is fitted. 3b is formed, and a through hole 3a serving as a path of an optical signal is formed on the other side.

An optical fiber fixing member (hereinafter referred to as a fixing member) for fixing the holder 8 to which the optical fiber 7 is inserted and adhered with a resin adhesive or the like is provided around the outer opening of the frame 3 in the through hole 3a. 5) are joined with a brazing material such as silver brazing. The fixing member 5 is made of a metal material such as an Fe-Ni-Co alloy or an Fe-Ni alloy. For example, when the fixing member 5 is made of an Fe-Ni-Co alloy, the ingot of this alloy is subjected to metal working such as rolling or pressing. To form a predetermined shape. In order to effectively prevent oxidation corrosion, a 0.5-9 μm Ni layer or a 0.5-5 μm Au
A metal layer such as a layer is preferably applied by a plating method.

A translucent member 9 made of amorphous glass or the like, which functions as a condensing lens and closes the inside of the optical semiconductor package, is formed on the inner peripheral surface of the fixing member 5 on the surface of the joint. 200-4 through the metallized layer
It is joined with a low melting point brazing material such as a gold (Au) -tin (Sn) alloy having a melting point of 00 ° C.

The translucent member 9 has a coefficient of thermal expansion of 4 to 12
(Ppm / ° C.) (room temperature to 400 ° C.) made of sapphire (single crystal alumina), amorphous glass, or the like, and has a spherical, hemispherical, convex lens shape, rod lens shape, or the like. A light condensing member for transmitting light such as an external laser beam to the optical semiconductor element 2 through the optical fiber 7 or for inputting light such as laser light output from the optical semiconductor element 2 to the optical fiber 7. Used as When the translucent member 9 is, for example, an amorphous glass having no crystal axis, a lead-based material containing silicon oxide (SiO ₂ ) and lead oxide (PbO) as main components,
Alternatively, a borosilicate material containing boric acid or silica sand as a main component is used.

The crystal axis of the translucent member 9 is provided because the fixing member 5 absorbs and relaxes the stress due to the difference in thermal expansion even if the coefficient of thermal expansion of the translucent member 9 is different from that of the frame 3. It is unlikely that the light will cause a change in the refractive index due to the alignment in the direction. Therefore, by using such a translucent member 9, the light coupling efficiency between the optical semiconductor element 2 and the optical fiber 7 can be increased.

The holder 8 is provided with a YAG
Since it is joined by laser welding or the like, it is better to be made of a metal material like the fixing member 5, and further, the thermal expansion coefficient is set so that the optical axis of the optical semiconductor element 2 and the optical fiber 7 do not shift. The material is preferably the same as that of the fixing member 5. Therefore, if the fixing member 5 is made of an Fe—Ni—Co alloy, the holder 8 is preferably made of an Fe—Ni—Co alloy.
Is an Fe—Ni alloy, the holder 8 is preferably an Fe—Ni alloy.

The ceramic substrate 4 is attached to the mounting portion 3b.
The input / output terminal 4 on which the metallized layer 4b is attached is fitted to a. The ceramic substrate 4a is joined to the inner peripheral surface of the mounting portion 3b with a brazing material such as silver brazing, and has a function of airtightly housing the optical semiconductor element 2, and has a metallized layer 4b and a frame 3 on its upper surface. Has an insulating function of electrically insulating the. In addition, the material of the ceramic substrate 4a is made of alumina (Al ₂ O 3) in accordance with characteristics such as a dielectric constant and a thermal expansion coefficient.
Ceramic materials such as O ₃ ) ceramics and aluminum nitride (AlN) ceramics are appropriately selected.

The input / output terminals 4 are formed by adding a metal paste obtained by adding an organic solvent and a solvent to a powder of W, Mo, Mn or the like to be the metallized layer 4b, and applying an organic binder suitable for the raw material powder to be the ceramic substrate 4a. And a solvent or the like are added and mixed to form a paste, and the paste is printed and applied to a ceramic green sheet formed by a doctor blade method or a calendar roll method in a desired shape in advance by a conventionally well-known screen printing method. It is manufactured by sintering at a high temperature of 1600 ° C.

The lead terminal 6 is joined to the upper surface of the metallized layer 4b via a brazing material such as silver brazing. The lead terminal 6 is made of a material having a coefficient of thermal expansion close to that of the input / output terminal 4 in order to strengthen the connection with the input / output terminal 4. For example, when the ceramic substrate 4a of the input / output terminal 4 is made of Al ₂ O ₃ ceramic, the lead terminal 6 is made of an Fe—Ni—Co alloy or an Fe—Ni alloy.

A lid 10 is joined to the upper surface of the frame 3 to which the input / output terminal 4 and the fixing member 5 are joined by seam welding or the like, thereby sealing the optical semiconductor element 2 inside the optical semiconductor package. Becomes

As described above, in the optical semiconductor package of the present invention, the base 1 is made of the unidirectional carbon fibers 1c-A which are arranged in the thickness direction and impregnated with copper and / or silver 1c-B. Substrate 1 composed of metal-carbon composite
On the upper and lower surfaces of the substrate c, a metal layer 1d is formed by laminating an adhesive layer 1d-A made of a chromium-iron alloy, an intermediate layer 1d-B made of copper, and a surface layer 1d-C made of molybdenum from the base 1c side. And has a screw mounting portion 1b. Also, the mounting portion 1a of the optical semiconductor element 2
And a frame 3 having a through hole 3a and a mounting portion 3b, and an input / output terminal 4 for inputting / outputting a high-frequency signal to / from an external electric circuit board.

Further, the optical semiconductor package of the present invention, an optical semiconductor device 2 mounted and fixed on the mounting portion 1a and electrically connected to the input / output terminal 4, and an optical semiconductor device bonded to the upper surface of the optical semiconductor package. An optical semiconductor device as a product is provided by including the lid 10 that seals 2. The optical fiber 7 fixed to the optical semiconductor package is
Generally provided when using an optical semiconductor device,
It may be added to the optical semiconductor device as a single item,
Alternatively, the optical semiconductor device may be attached to the optical semiconductor device at the time of use after being fixed to an external electric circuit board or the like.

In such an optical semiconductor device, the optical semiconductor element 2 is optically excited by, for example, a high-frequency signal supplied from an external electric circuit board, and the excited laser light or the like is transmitted to or received from the optical fiber 7 through the translucent member 9. By transmitting the data through the optical fiber 7, the device functions as a photoelectric conversion device capable of transmitting a large amount of information at high speed, and can be widely used in the field of optical communication and the like.

It should be noted that the present invention is not limited to the above embodiment, and that various changes can be made without departing from the scope of the present invention. For example, in the optical semiconductor device, an optical isolator for preventing return light may be provided inside or outside, for example, inside or outside the frame 3 of the fixing member 5 or in the middle of the optical fiber 7 outside the frame 3. .
In this case, the light coupling efficiency between the optical semiconductor element 2 and the optical fiber 7 is further improved.

[0053]

According to the present invention, a substantially rectangular base having a mounting portion on which an optical semiconductor element is mounted on its upper surface and having a screw mounting portion formed of a through hole or a notch on the opposite side portion has a large thickness. Adhesive layers made of a chromium-iron alloy on the upper and lower surfaces of a substrate composed of a metal-carbon composite composed of unidirectional carbon fibers impregnated with copper and / or silver and arranged from the substrate side Since the metal layer formed by laminating the intermediate layer made of copper and the surface layer made of molybdenum is formed, the heat generated by the optical semiconductor element is efficiently dissipated to the outside and the light accommodated in the optical semiconductor package. The semiconductor element can operate normally and stably for a long period of time. Further, the optical semiconductor package can be firmly fixed to the external electric circuit board by screwing.

According to the present invention, preferably, the adhesive layer and the intermediate layer each have a thickness of 5 to 30 μm, and the surface layer has a thickness of 30 to 100 μm. It can be approximated, and the heat generated during the operation of the optical semiconductor element can be efficiently transmitted to the base.

An optical semiconductor device according to the present invention includes an optical semiconductor element housing package according to the present invention, an optical semiconductor element mounted and fixed on a mounting portion and electrically connected to input / output terminals, and an optical semiconductor device mounted on an upper surface of a frame. With the provision of the joined lid, it is possible to provide a highly reliable optical semiconductor device using the optical semiconductor package having the above-described effects and advantages unique to the present invention.

[Brief description of the drawings]

FIG. 1 is a perspective view showing an example of an embodiment of an optical semiconductor package of the present invention.

FIG. 2 is a partially enlarged sectional view of a base of the optical semiconductor package of FIG. 1;

FIG. 3 is a cross-sectional view of a conventional optical semiconductor package.

FIG. 4 is a partially enlarged sectional view of a base of the optical semiconductor package of FIG. 3;

[Explanation of symbols]

 1: Base 1a: Placement section 1b: Screw mounting section 1c: Base 1c-A: Unidirectional carbon fiber 1c-B: Copper and / or silver 1d: Metal layer 1d-A: Adhesive layer 1d-B: Middle Layer 1d-C: Surface layer 2: Optical semiconductor element 3: Frame 3a: Through hole 3b: Mounting part 4: Input / output terminal 5: Optical fiber fixing member 7: Optical fiber 10: Lid

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) H01L 31/0232 H01L 31/02 C

Claims (3)

[Claims] 1. A substantially quadrangular base having a mounting portion on which an optical semiconductor element is mounted on its upper surface and having a screw mounting portion formed of a through hole or a notch on an opposite side, and a through hole on one side. A frame body attached to the upper surface of the base so as to have an input / output terminal mounting portion formed of a hole or a cutout portion and surround the mounting portion, and an input / output terminal fitted to the mounting portion; And a cylindrical optical fiber fixing member fitted into a through hole formed on the other side of the frame, wherein the base is arranged in the thickness direction. A bonding layer made of a chromium-iron alloy, an intermediate layer made of copper, on the upper and lower surfaces of a base made of a metal-carbon composite made of unidirectional carbon fibers impregnated with copper and / or silver. Layer and a surface layer of molybdenum A package for housing an optical semiconductor element, wherein a metal layer is formed. 2. The adhesive layer and the intermediate layer each have a thickness of 5 to 30 μm, and the surface layer has a thickness of 30 to 30 μm.
2. The package for housing an optical semiconductor element according to claim 1, wherein the thickness is 100 μm. 3. The optical semiconductor element storage package according to claim 1, further comprising: an optical semiconductor element mounted and fixed to the mounting portion and electrically connected to the input / output terminal; and joined to an upper surface of the frame. An optical semiconductor device, comprising: