JP2002146523A - Sputtering target, and sputtering system using it - Google Patents

Abstract

PROBLEM TO BE SOLVED: To suppress the peel-off and falling of a re-adhering substance from a noneroded area of a target body, a backing plate, etc., and to reduce hereby the generation of dust resultant from the peel-off and falling of the re-adhering substance. SOLUTION: A sputtering target 3 has the target body 1 and the backing plate 2 for supporting the target body 1. A film 4 for preventing the peel-off of re-adhering particles, which is deposited by a PVD or CVD method, is provided at least in a part of the noneroded area of the target body 1. The film 4 for preventing the peel-off of the re-adhering particles can produce its effect even if it is deposited onto an exposed surface of the backing plate.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

[0001] 1. Field of the Invention [0002] The present invention relates to a sputtering target used for forming a wiring film, an electrode, an element constituting film and the like of various electronic parts and a sputtering apparatus using the same.

[0002]

2. Description of the Related Art In manufacturing semiconductor parts and liquid crystal parts, a sputtering method is applied to the formation of various thin films used as wiring and electrodes. Specifically, on a deposition target substrate such as a semiconductor substrate or a glass substrate, Al, Cu, Ti, Mo,
Thin film of conductive metal such as W, Mo-W alloy, MoS
A thin film of a conductive metal compound such as i ₂ , WSi ₂ or TiSi ₂ or a thin film of a metal compound such as TiN or TaN is formed, and these thin films are used as wirings, electrodes, barrier layers and the like.

[0003] The sputtering method is a film forming method in which charged particles impinge on the surface of a sputtering target to strike out the sputtered particles from the target and deposit the sputtered particles on a substrate arranged opposite to the target to form a thin film. is there. A structure in which a target body made of a film forming material is held by a substrate called a backing plate is generally applied to a sputtering target used when applying such a film forming method.

By the way, in the film forming process using the conventional sputtering target as described above, as the degree of integration, reliability, and functionality of semiconductor elements and the like increases, generation of dust due to the target occurs. Has been recognized as a serious problem. The dust mentioned here is, for example, fine particles (particles) having a diameter of 0.2 μm or more. If such fine particles are mixed into the formed thin film, they cause a short circuit between wirings or an open defect of the wirings. Therefore, the production yield of electronic components such as a semiconductor element and a liquid crystal display element is reduced.

For example, an efficient magnetron sputtering method is mainly applied industrially, and an erosion portion and a non-erosion portion exist in a target main body due to its principle. Some of the sputtered particles reach the substrate, some fly to the periphery, and some return to the target body again. Of the particles that return to the target side, particles that have adhered to the non-erosion portion (re-adhered particles) are basically not sputtered again,
As the sputtering proceeds, redeposited particles are deposited. If the deposits (re-adhesion film) of the re-adhesion particles are peeled off for some reason, they will be mixed into the thin film formed as dust.

As described above, the detachment of the re-adhered matter is one of the causes of dust generation. In order to prevent such dust, the surface roughness of the non-erosion portion is made coarser than that of the erosion portion to prevent peeling and falling off of the reattached material (see, for example, JP-A-6-306597). A blast particle is injected into the portion to prevent detachment and detachment of the reattached matter by an anchor effect (see, for example, JP-A-9-76843). Various measures have been taken.

[0007]

However, although the above-mentioned conventional dust reduction measures have been recognized to have a certain effect, the dust tends to increase as the sputtering proceeds to near the target life. Was. For these reasons, there is a demand for more effectively suppressing the detachment and detachment of the reattachment deposited on the non-erosion region of the sputtering target, and further reducing the generation of dust.

In particular, in recent semiconductor devices, 256
In order to achieve a degree of integration such as M or 1G, a wiring width of 0.2 μm or less, and further, a wiring width of 0.13 μm or 0.1 μm is required, and some of them are being put to practical use. In such narrowed high-density wiring, even if extremely small particles are mixed in, wiring defects and the like are caused. Therefore, in order to increase the production yield of highly integrated semiconductor elements, the amount of generated dust is reduced. Needs to be greatly reduced. Therefore, there is a strong demand for suppressing the detachment and detachment of the reattachment, which contributes to the generation of dust.

SUMMARY OF THE INVENTION The present invention has been made to address such a problem, and reduces the generation of dust by effectively suppressing the detachment and detachment of reattached substances from a non-erosion area of a target body. It is an object of the present invention to provide a sputtering target that enables the above, and a sputtering apparatus using the same.

[0010]

Means for Solving the Problems The present inventors have observed and studied in detail the form of the re-adhered matter deposited and deposited on the non-erosion area of the target body and on the exposed surface of the backing plate. The deposition method is greatly affected by the underlayer, and a relatively smooth metal film or metal compound thin film such as a sputter film or a CVD film is previously formed as a surface treatment on the underlayer surface, thereby densifying the re-deposits. It has been found that it is possible to improve the adhesion strength to the substrate and the base, and to suppress the generation of dust due to the detachment and detachment of the re-adhered matter even in the latter stage of the sputtering.

The sputtering target of the present invention has been made based on such findings. That is,
As described in claim 1, the first sputtering target of the present invention is provided on a target body and at least a part of a non-erosion region of the target body,
And a re-adhesion particle peeling prevention film formed by a PVD method or a CVD method.

The second sputtering target of the present invention is provided on a target body, a backing plate for supporting the target body, and at least a part of the surface of the backing plate, and comprises a PVD. And a re-adhesion particle peeling prevention film formed by a CVD method or a CVD method.

[0013] In the sputtering target of the present invention, the reattachment particle peeling prevention film may comprise a metal thin film or a metal compound thin film formed by a sputtering method, an ion plating method or a CVD method. preferable. Further, as a specific constituent material, as described in claim 6, a metal thin film or a metal compound thin film containing a metal element constituting the target main body is preferable.

According to another aspect of the present invention, there is provided a sputtering apparatus, comprising: a vacuum container; a film-forming sample holding unit disposed in the vacuum container; In a sputtering apparatus including a sample holding unit and a target unit arranged to face the target unit, the target unit includes the sputtering target of the present invention described above.

[0015]

Embodiments of the present invention will be described below. FIG. 1 is a sectional view showing a schematic structure of a sputtering target according to the first embodiment of the present invention. In FIG. 1, reference numeral 1 denotes a disk-shaped target body made of a film-forming material such as various metal materials and compound materials. The target body 1 is supported by a backing plate 2, and these constitute a sputtering target 3.

The backing plate 2 serves as a support member for the target body 1 and also has ion bombardment (sputter heat).
And has a function as a cooling member for suppressing a rise in temperature of the target body 1 due to the above. For this reason, as a constituent material of the backing plate 2, for example, oxygen-free copper or an Al alloy having a high thermal conductivity is used, and the backing plate 2 incorporates a cooling pipe (not shown).

The constituent material of the target body 1 is not particularly limited, and various simple metal materials, alloy materials, metal compound materials, etc. are used according to the intended use of the sputtering target. Specific examples of the constituent material of the target body 1 include Ti, Zr, Hf, V, Nb, Ta,
Cr, Mo, W, Pt, Ag, Ir, Ru, Fe, N
A simple substance of a metal element selected from i, Co, Al, Cu, Si, and Ge, or an alloy or a compound containing the above-described metal element is exemplified.

FIG. 2 schematically shows the structure of a general magnetron sputtering apparatus. In a general magnetron sputtering apparatus, a sputtering target 3 and a substrate 5 are disposed to face each other, an electric field E is applied between them, and a target 6 is disposed at right angles to the sputtering target 3 by a magnet 6 disposed on the back side of the sputtering target 3. A magnetic field M is generated on the surface.

By the action of these magnetic field M and electric field E,
The electrons cause cyclone motion, generate high-density plasma in the target surface and in the upper magnetic field, and erosion of the target surface in a region surrounded by the magnetic field M progresses.
On the other hand, since the target region deviated from the magnetic field M, that is, the central portion A, the outer peripheral portion B, and the side surface portion C of the surface (sputtered surface) of the target main body 1 are not sputtered, the reattached particles are deposited as a non-erosion region. The detachment and detachment of the re-adhered particles deposited in the non-erosion area cause dust.

Therefore, in the sputtering target 3 shown in FIG. 1, the non-erosion region of the target main body 1, ie, the central portion, the outer peripheral portion, and the side portion of the target main body 1, is formed with the reattachment particle peeling preventing film 4. ing. Note that the reattachment particle peeling prevention film 4 does not necessarily have to be formed on the entire non-erosion region of the target main body 1, and the effect is exhibited even when formed on a part thereof. For example, the formation of the redeposition particle separation preventing film 4 only on the outer peripheral portion of the surface of the target main body 1 in which the separation and detachment of the redeposition particles is a problem is particularly effective in suppressing dust.

The reattachment particle peeling prevention film 4 is made of PVD (Phys
ical Vapor Deposition method or C
VD (Chemical Vapor Deposition)
It consists of a metal thin film or a metal compound thin film formed by the method. Conventional thermal spray coatings have a rough surface, and particles adhering to the shadowed portion of the convex portion (mainly the surface opposite to the side on which the reattached particles are adhered) tend to peel off.
Redeposition particle peeling prevention film 4 formed by D method or CVD method
Shows good compatibility with redeposited particles (sputtered particles) because the surface itself is smoother than conventional thermal sprayed coatings, in addition to being a thin film itself. Can be deposited at a high density and relatively smoothly.

As described above, by forming the anti-adhesion particle peeling prevention film 4 as a surface treatment in advance in the non-erosion area of the target main body 1, the adhesion strength and re-adhesion of the re-adhesion substance adhering and depositing thereon can be improved. It is possible to increase the fixing strength between the adhered substance and the base (removable particle peeling prevention film 4).
With these, it is possible to effectively suppress the detachment and detachment of the reattachment. That is, the generation of dust due to the detachment and detachment of the reattachment can be significantly reduced.

As a method for forming the reattachment particle peeling preventing film 4, PVD such as vacuum deposition, molecular beam epitaxy (MBE), ion plating, sputtering, laser deposition, ion beam deposition, etc.
Method, thermal CVD method, plasma CVD method, optical CVD
It is possible to apply a CVD method such as a sputtering method, and particularly to apply a sputtering method, an ion plating method, or various CVD methods which are excellent in adhesion strength to the base (target body 1) and in which the film formation cost is low. Is preferred.

Here, when the ion plating method is applied as a method for forming the reattachment particle peeling prevention film 4,
In order to clean the surface of the target main body 1 and improve the adhesion of the reattachment particle peeling prevention film 4, the target main body 1
Is preferably subjected to bombard cleaning. For example, when the target body 1 is made of Ti, such a target body 1 is preheated in a vacuum, and A
After the r bombard cleaning and the Ti bombard cleaning are performed, it is preferable to form the anti-redeposition particle peeling film 4 made of a thin film of Ti or TiN.

Further, it is preferable that at least one of rotary polishing and polishing is performed in advance on the surface of the target main body 1 on which the re-adhesion particle separation preventing film 4 is formed, and in particular, polishing is performed after the rotary polishing is performed. Is preferably performed. In the present invention, after subjecting the target body 1 to a polishing treatment, it is preferable to further perform a surface treatment by wet etching, dry etching, reverse sputtering, or the like. For wet etching, for example, a potassium ferricyanide (red blood potassium) solution or the like can be used as an etching solution. In dry etching, for example, a mixed gas of CF ₄ / O ₂ or the like can be used as an etching gas.

As described above, the redeposition particle peeling prevention film 4
By forming the above-mentioned polishing treatment or surface treatment on the target main body 1 before forming, the internal strain of the crystal plane on the surface of the target main body 1 is reduced,
It is possible to suppress the detachment of the re-attached particle detachment preventing film 4 due to the release of the strain due to the thermal effect at the time of sputtering. Furthermore, since the surface of the re-adhesion particle peeling prevention film 4 can be further smoothed, the re-adhesion particles can be more effectively prevented from peeling and falling off.

The constituent material of the reattachment particle peeling prevention film 4 is not particularly limited, and various metal materials (simple metals or alloys) and metal compound materials can be used. Considering the prevention of separation due to the adhesion of the adhered substance and the difference in thermal expansion, and the prevention of contamination (contamination) of components other than the components formed into the thin film when the re-adhesion particle separation prevention film 4 is sputtered, the target is taken into consideration. It is preferable to apply a metal thin film or a metal compound thin film containing a metal element constituting the main body 1.

Specifically, the sputtering target 3
When the thin film formed by using a single metal is used, it is preferable that the metal thin film itself constitutes the anti-adhesion particle peeling prevention film 4. When the thin film to be formed is a metal compound, a simple thin film of a metal element constituting the metal compound,
Alternatively, the metal compound thin film itself is used to prevent the reattachment particle peeling film 4
It is preferable to produce For example, when a metal compound film is formed by reactive sputtering, a metal target is used for the target main body 1, and a redeposition particle separation preventing film 4 made of a metal compound thin film is formed in a non-erosion region of such a metal target. By doing so, it is possible to obtain a stress relaxation effect of the re-deposits deposited there,
It is possible to further enhance the effect of suppressing the detachment of the reattachment.

As the reattachment particle peeling prevention film 4, a metal thin film or a metal compound thin film other than the metal element constituting the target main body 1 can be applied. It is preferable to select the materials so that the difference in the rates is within 1 × 10 ⁻⁶ / K. The difference in thermal expansion coefficient between the re-adhered particles peeling prevention film 4 and the target body 1 is 1 × 10 ^{- 6} /
If it exceeds K, there is a possibility that peeling of the redeposition particle peeling prevention film 4 itself and further peeling of the redeposited matter may easily occur due to thermal stress.

The thickness of the reattachment particle peeling prevention film 4 is 1
It is preferably in the range of 10 to 10 μm. If the thickness of the re-adhesion particle peeling prevention film 4 exceeds 10 μm, not only the film itself may be easily peeled off, but also the state of the film surface may be deteriorated and the re-adhesion particles may easily fall off. On the other hand, when the thickness of the redeposition particle separation preventing film 4 is less than 1 μm, there is a possibility that the effect of increasing the density and smoothing effect of the redeposition particles deposited thereon may not be sufficiently obtained. For the same reason, the surface roughness of the film surface of the reattachment particle peeling prevention film 4 is JI
The arithmetic average roughness Ra defined in SG0601-1994 is preferably 1 μm or less.

As described above, in the sputtering target 3 of the first embodiment, since the re-adhesion particle peeling prevention film 4 is formed in advance in the non-erosion region of the target main body 1 as a surface treatment, the re-coating is performed thereon. The adhered particles can be deposited with high density and smoothness under high fixing strength, and the adhesion strength of the re-adhered substance itself and the fixing strength with the base (re-adhered particle peeling prevention film 4) can be increased. . With these, it is possible to effectively prevent the generation of dust resulting from the detachment and detachment of the reattachment, specifically, fine dust having a diameter of about 0.2 μm or less. In particular, even in the latter stage of the sputtering (near the target life), it is possible to effectively prevent the generation of dust due to the detachment and detachment of the reattachment.

Next, a sputtering target according to a second embodiment of the present invention will be described. FIG. 3 is a sectional view showing a schematic structure of a sputtering target according to the second embodiment. The sputtering target 7 shown in FIG. 3 has a structure in which the disk-shaped target main body 1 is supported by the backing plate 2, and these configurations are the same as those in the first embodiment.

Here, as is clear from the magnetron sputtering apparatus shown in FIG. 2, the re-adhered particles adhere and deposit not only on the non-erosion area of the target body 1 but also on the exposed surface of the backing plate 2. Therefore,
In the sputtering target 7 shown in FIG.
PVD method or CV on the exposed surface of backing plate 2
The reattachment particle peeling prevention film 4 is formed by the method D. The detailed conditions of the reattachment particle peeling prevention film 4 are the same as those of the first
This is the same as the embodiment.

As described above, by forming the redeposited particle peeling prevention film 4 on the exposed surface of the backing plate 2, the redeposited particles adhered thereon are deposited with high density and smoothness under high fixing strength. Therefore, the detachment and detachment of the reattachment can be effectively suppressed. Therefore, it is possible to prevent the generation of dust due to the detachment and detachment of the reattachment.

As shown in FIG. 4, the non-erosion region of the target main body 1, that is, the central part, the outer peripheral part and the side part of the target main body 1, and the exposed surface of the backing plate 2, as shown in FIG. It is particularly preferable to form each of them. As a result, it is possible to further effectively reduce the generation of dust caused by the detachment and detachment of the re-attachment.

The sputtering apparatus of the present invention is one in which the sputtering target (3, 7) of the present invention is applied to a target portion of a conventionally generally used sputtering apparatus as shown in FIG. Note that FIG.
Although not shown in the drawings, the substrate 5 which is a sample on which a film is to be formed is held by a holder or the like, and the substrate 5 and the sputtering target 3 are arranged in a vacuum vessel.

According to the above-described sputtering targets 3 and 7 of the present invention, it is possible to effectively prevent the generation of dust due to itself. Therefore, according to a sputtering apparatus using such a sputtering target, the quality of a sputtered film can be significantly improved. Then, a sputtered film formed using the sputtering target of the present invention, that is, a metal thin film or a metal compound thin film is used as a wiring film, an electrode, an element constituent film, etc. of an electronic component such as a semiconductor element or a liquid crystal display element. This makes it possible to improve the production yield of electronic components.

[0038]

Next, specific examples of the present invention will be described.

Example 1 First, a Ti target (target body) having a purity of 5N
Al alloy (606 to become Ti disk and backing plate)
1) The plate and the plate were diffusion bonded by hot pressing. These were machined to the desired target shape and backing plate shape. Specifically, the Ti target has an outer diameter of 250m.
m and a thickness of 15 mm. The backing plate had an outer diameter of 300 mm.

Next, masking was performed so as to cover a portion having an inner diameter of 240 mm on the surface of the Ti target. That is, Ti
A masking treatment was performed so as to expose a portion having a width of 5 mm and a side surface of the target surface. Through this masking, a Ti thin film having a thickness of about 5 μm was formed as a re-adhesion particle peeling prevention film on the outer periphery and side surfaces of the Ti target and on the exposed surface of the backing plate by the CVD method. The Ti sputtering target on which the reattachment particle peeling prevention film was formed by the CVD method was subjected to a film formation test described later.

Example 2 The procedure of Example 2 was repeated except that a redeposition particle-preventing film (Ti thin film having a thickness of about 5 μm) was formed on the outer periphery and side surfaces of the Ti target and on the exposed surface of the backing plate by sputtering. In the same manner as in Example 1, a Ti sputtering target was produced. The Ti sputtering target having the reattachment particle peeling prevention film formed by a sputtering method was subjected to a film formation test described later.

Example 3 Except that an anti-adhesion particle peeling film (Ti thin film having a thickness of about 3 μm) was formed on the outer periphery and side surfaces of the Ti target and on the exposed surface of the backing plate by the arc ion plating method. In the same manner as in Example 1, a Ti sputtering target was produced. Here, as a pre-treatment for forming a re-adhesion particle peeling prevention film by the arc ion plating method, a Ti target before film formation was placed in a vacuum apparatus, evacuated to 2.4 × 10 ⁻³ Pa, and then heated to 300 ° C. Preheating was performed, and Ar bombard cleaning was performed for 30 minutes, and further Ti bombard cleaning was performed for 10 minutes. The Ti sputtering target on which the reattachment particle peeling prevention film was formed by the arc ion plating method was subjected to a film formation test described later.

Comparative Example 1 A Ti sputtering target was produced in the same manner as in Example 1, except that no treatment was applied to the outer peripheral portion and the side surface portion of the Ti target and the exposed surface of the backing plate. The Ti sputtering target not subjected to the reattachment particle separation prevention treatment was subjected to a film formation test described later.

Comparative Example 2 A Ti sputtering target was produced in the same manner as in Example 1 except that only the blast treatment was performed on the outer peripheral portion and the side portion of the surface of the Ti target, and on the exposed surface of the backing plate. A Ti sputtering target to which a blast treatment was applied as a treatment for preventing the reattached particles from peeling was subjected to a film formation test described later.

COMPARATIVE EXAMPLE 3 The outer periphery and side surfaces of the Ti target and the exposed surface of the backing plate were sprayed with a T
A Ti sputtering target was produced in the same manner as in Example 1 except that an i thin film was formed. The Ti sputtering target on which a thermal sprayed film was formed as a treatment for preventing the reattached particles from peeling was subjected to a film formation test described later.

Examples 1 to 3 and Comparative Examples 1 to 3 described above
Using each Ti sputtering target according to the above, sputtering pressure 4 × 10 ^-1 Pa, sputtering current 5A, Ar flow rate 15sccm,
Magnetron sputtering was performed under the conditions of an N ₂ flow rate of 30 sccm to form a Ti thin film on a 6-inch Si wafer. Then, after 100 lots, 150 lots, and 200 lots, the number of particles (particle number) of 0.2 μm or more on each Ti thin film was measured by a particle counter. Table 1 shows the measurement results.

[0047]

[Table 1]

As is clear from Table 1, according to each of the Ti sputtering targets of Examples 1 to 3, the amount of dust generation is smaller than that of the Ti sputtering targets of Comparative Examples 1 to 3. In particular, it can be seen that the amount of dust generated near the target life is significantly reduced.

Example 4 A film thickness of 5 μm and a thickness of 20 μm were formed on the outer periphery and side surfaces of the Ti target and on the exposed surface of the backing plate, respectively.
Sputtering targets were produced in the same manner as in Example 3, except that the anti-reattachment particle peeling film composed of the m, 50 μm, and 100 μm Ti thin films was formed by the arc ion plating method. A film forming test was performed on these sputtering targets under the same conditions as in Example 3, and after 100 lots, 150 lots, and 200 lots each Ti
The number of dust (particle number) of 0.2 μm or more on the thin film was measured. Table 2 shows the measurement results. Table 2 also shows the surface roughness of the reattachment particle peeling prevention film (Ti thin film).

[0050]

[Table 2]

As is clear from Table 2, each of the Ti sputtering targets according to Samples 1 of Examples 3 and 4 produced a small amount of dust, whereas Sample 2 of Example 4 having a thicker Ti thin film. Each of the sputtering targets Nos. 1 to 4 has an increased dust generation amount. This is because, in Samples 2 to 4 of Example 4, since the surface roughness of the Ti thin film increased with the increase in the film thickness, the redeposited particles that had adhered to the portion of the film surface that was in the shadow of the projections fell off. The number of dusts increased as compared with the sample 1 of Example 3 or Example 4 due to the increase in film stress due to the accumulation of redeposited particles on the tip of the convex portion of the film surface. Conceivable.
As can be seen from this result, the thickness of the anti-redeposition particle peeling film is preferably in the range of 1 to 10 μm.

Example 5 Before forming a re-adhesion particle peeling prevention film, the surface of a Ti target was subjected to an etching treatment to remove a processing strain layer and the like and to clean the surface. A sputtering target was produced in the same manner as in Example 3, except that the anti-reattachment particle peeling-off film was formed by the arc ion plating method. For this sputtering target, a film formation test was performed under the same conditions as in Example 3, and the number of dust particles of 0.2 μm or more on each Ti thin film after 100, 150, and 200 lots was measured. Table 3 shows the measurement results. Table 3 also shows the surface roughness of the reattachment particle peeling prevention film (Ti thin film).

[0053]

[Table 3]

As is apparent from Table 3, the amount of dust generated by the sputtering target of Example 5 is slightly lower than that of the sputtering target of Example 3. As can be seen from this, it is preferable that the surface on which the reattachment particle peeling prevention film is formed (the surface of the target main body) be a clean surface from which a work distortion layer or the like has been removed in advance.

Example 6 A Ti target (sample 1) having a mirror-finished surface and a Ti target (sample 2) having a mirror-polished surface and an etched surface were prepared. Except for forming a redeposition particle peeling prevention film composed of a Ti thin film by an arc ion plating method,
A sputtering target was produced in the same manner as in Example 3. A film formation test was performed on these sputtering targets under the same conditions as in Example 3, and after 100 lots, 150 lots, and 200 lots, 0.2 μm
Each of the above dust numbers was measured. Table 4 shows the measurement results. Table 4 also shows the surface roughness of the reattachment particle peeling prevention film (Ti thin film).

[0056]

[Table 4]

As is clear from Table 4, the amount of dust generated in each of the sputtering targets of Example 6 is slightly lower than that of the sputtering target of Example 3.
As can be seen from this, it is preferable that the surface on which the reattachment particle separation preventing film is formed (the surface of the target body) be a smooth surface.

Example 7 First, a purity of 5N to be a Ta target (target body)
Al alloy (606 to be Ta disk and backing plate)
1) The plate and the plate were diffusion bonded by hot pressing. These were machined to the desired target shape and backing plate shape. Specifically, the Ta target has an outer diameter of 250m.
m and a thickness of 15 mm. The backing plate had an outer diameter of 300 mm.

Next, masking was performed so as to cover a portion having an inner diameter of 240 mm on the surface of the Ta target. That is, Ta
A masking treatment was performed so as to expose a portion having a width of 5 mm and a side surface of the target surface. Through this masking, a Ta thin film having a thickness of about 5 μm was formed as a re-adhesion particle peeling prevention film on the outer peripheral portion and side surface portion of the Ta target, and further on the exposed surface of the backing plate by the CVD method. The Ta sputtering target on which the re-adhesion particle peeling prevention film was formed by the CVD method was subjected to a film formation test described later.

Example 8 The same procedure as in Example 8 was carried out except that a redeposition particle-preventing film (Ta thin film having a thickness of about 5 μm) was formed on the outer periphery and side surfaces of the Ta target and on the exposed surface of the backing plate by sputtering. 7, a Ta sputtering target was produced. A Ta sputtering target having the reattachment particle peeling prevention film formed by a sputtering method was subjected to a film formation test described later.

Example 9 Except that an anti-removable particle peeling film (Ta thin film having a thickness of about 3 μm) was formed by an arc ion plating method on the outer peripheral portion and the side surface portion of the Ta target, and on the exposed surface of the backing plate. In the same manner as in Example 7, a Ta sputtering target was produced. Here, as a pretreatment for forming a re-adhesion particle peeling prevention film by the arc ion plating method, a Ta target before film formation was placed in a vacuum apparatus, evacuated to 2.4 × 10 ⁻³ Pa, and then heated to 300 ° C. Arbon bombard cleaning was performed for 30 minutes by preheating, and Ta bombard cleaning was performed for 10 minutes. The Ta sputtering target on which the reattachment particle peeling prevention film was formed by the arc ion plating method was subjected to a film formation test described later.

Comparative Example 4 A Ta sputtering target was produced in the same manner as in Example 7, except that no treatment was applied to the outer peripheral portion and the side surface portion of the Ta target and the exposed surface of the backing plate. The Ta sputtering target which had not been subjected to the treatment for preventing the reattached particles from peeling was subjected to a film formation test described later.

Comparative Example 5 A Ta sputtering target was produced in the same manner as in Example 7, except that only the blast treatment was performed on the outer peripheral portion and the side surface portion of the Ta target, and on the exposed surface of the backing plate. The Ta sputtering target subjected to the blast treatment as the treatment for preventing the reattached particles from peeling was subjected to a film formation test described later.

COMPARATIVE EXAMPLE 6 The outer peripheral portion and the side portion of the Ta target and the exposed surface of the backing plate were sprayed with a T
A Ta sputtering target was produced in the same manner as in Example 7, except that the a thin film was formed. The Ta sputtering target on which the thermal sprayed film was formed as a treatment for preventing the reattached particles from peeling was subjected to a film formation test described later.

The above Examples 7 to 9 and Comparative Examples 4 to 6
Using each Ta sputtering target, a sputtering pressure of 4 × 10 ⁻¹ Pa, a sputtering current of 5 A, an Ar flow rate of 5 sccm,
A TaN thin film was formed on a 6-inch Si wafer by magnetron sputtering with a N ₂ flow rate of 3 sccm. The number of dust (particles) of 0.2 μm or more on each TaN thin film after 100, 150, and 200 lots was measured by a particle counter. Table 5 shows the measurement results.

[0066]

[Table 5]

As is clear from Table 5, according to the Ta sputtering targets of Examples 7 to 9, the amount of dust generation is smaller than that of the Ta sputtering targets of Comparative Examples 4 to 6. In particular, it can be seen that the amount of dust generated near the target life is significantly reduced.

Example 10 A film thickness of 5 μm and a film thickness of 20 μm were formed on the outer peripheral portion and the side portion of the Ta target and on the exposed surface of the backing plate, respectively.
Sputtering targets were produced in the same manner as in Example 9 except that the redeposition particle-preventing film composed of the m, 50 μm, and 100 μm thin films was formed by the arc ion plating method. A film formation test was performed on these sputtering targets under the same conditions as in Example 9, and after 100 lots, 150 lots, and 200 lots of each Ta,
The number of dust (particle number) of 0.2 μm or more on the N film was measured. Table 6 shows the measurement results. Table 6 also shows the surface roughness of the reattachment particle peeling prevention film (Ta thin film).

[0069]

[Table 6]

Example 11 Before forming a re-adhesion particle peeling prevention film, the surface of a Ta target was subjected to an etching treatment to remove a processing strain layer and the like and to clean the surface. A sputtering target was produced in the same manner as in Example 9 except that the anti-redeposition particle peeling film was formed by an arc ion plating method. For this sputtering target, a film formation test was performed under the same conditions as in Example 9, and the number of dust particles of 0.2 μm or more on each TaN film after 100, 150, and 200 lots was measured. Table 7 shows the measurement results. Table 7 also shows the surface roughness of the antiadhesion particle peeling prevention film (Ta thin film).

[0071]

[Table 7]

Example 12 A Ta target (sample 1) having a mirror-finished surface and a Ta target (sample 2) having a mirror-finished surface and an etched surface were prepared, and a 3 μm-thick film was formed on the outer periphery and side surfaces thereof. Except for forming a redeposition particle peeling prevention film made of a Ta thin film by an arc ion plating method,
A sputtering target was produced in the same manner as in Example 9. For these sputtering targets, a film formation test was performed under the same conditions as in Example 9 and 0.2 μm on each TaN film after 100 lots, 150 lots, and 200 lots.
Each of the above dust numbers was measured. Table 8 shows the measurement results. Table 8 also shows the surface roughness of the reattachment particle peeling prevention film (Ta thin film).

[0073]

[Table 8]

[0074]

As described above, according to the sputtering target of the present invention, the detachment and detachment of the reattachment from itself can be effectively suppressed. Generation of dust can be significantly reduced. Therefore, it is possible to provide a high quality sputtered film with good reproducibility.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view illustrating a schematic configuration of a sputtering target according to a first embodiment of the present invention.

FIG. 2 is a diagram schematically showing a configuration of a general magnetron sputtering apparatus.

FIG. 3 is a sectional view showing a schematic configuration of a sputtering target according to a second embodiment of the present invention.

FIG. 4 is a sectional view showing a modification of the sputtering target shown in FIG.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 ... Target body 2 ... Backing plate 3, 7 ... Sputtering target 4 ... Re-adhesion particle peeling prevention film

 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Takashi Ishigami, 8-8 Shinsugita-cho, Isogo-ku, Yokohama-shi, Kanagawa Prefecture Inside the Toshiba Yokohama Office (72) Koichi Watanabe 8th, Shinsugita-cho, Isogo-ku, Yokohama-shi, Kanagawa (72) Inventor Takashi Watanabe, Inc.8, Shinsugita-cho, Isogo-ku, Yokohama-shi, Kanagawa Prefecture Inside the Toshiba Yokohama Office (72) Naomi Fujioka, 8-8 Shinsugita-cho, Isogo-ku, Yokohama-shi, Kanagawa Prefecture Toshiba Corporation Inside Yokohama Works (72) Inventor Yasuo Takasaka 8th Shinsugita-cho, Isogo-ku, Yokohama-shi, Kanagawa Prefecture Inside Toshiba Yokohama Works (72) Inventor Yukinobu Suzuki 8th Shinsugita-cho, Isogo-ku, Yokohama-shi, Kanagawa Prefecture Toshiba Yokohama Co., Ltd. F-term (reference) 4K029 DC07 DC12 4M104 BB01 BB02 BB04 BB05 BB06 BB08 BB13 BB14 BB16 BB17 BB18 BB3 2 BB36 DD39 DD40 DD42 HH20 5F103 AA08 BB22 BB60 DD28 RR10

Claims (8)

[Claims] 1. A sputtering target comprising: a target main body; and a re-adhesion particle peeling prevention film provided on at least a part of a non-erosion region of the target main body and formed by a PVD method or a CVD method. . 2. The sputtering target according to claim 1, wherein the target body is supported by a backing plate. 3. A target body, a backing plate for supporting the target body, and a redeposition particle peeling prevention film provided on at least a part of a surface of the backing plate and formed by a PVD method or a CVD method. A sputtering target. 4. The sputtering target according to claim 3, wherein the reattachment particle separation preventing film is formed on at least a part of a non-erosion region of the target body. 5. The sputtering target according to claim 1, wherein the reattachment particle separation preventing film is a metal thin film or metal formed by a sputtering method, an ion plating method, or a CVD method. A sputtering target comprising a compound thin film. 6. The sputtering target according to claim 1, wherein the reattachment particle peeling prevention film is formed of a metal thin film or a metal compound thin film containing a metal element constituting the target main body. A sputtering target characterized by the above-mentioned. 7. The sputtering target according to claim 1, wherein the target body is made of Ti, Zr, Hf, V, Nb,
Ta, Cr, Mo, W, Pt, Ag, Ir, Ru, F
A sputtering target comprising a simple substance of a metal element selected from e, Ni, Co, Al, Cu, Si and Ge, or an alloy or a compound containing the metal element. 8. A vacuum vessel, a film-holding sample holding section disposed in the vacuum vessel, and a target section disposed in the vacuum vessel so as to face the film-forming sample holding section. A sputtering apparatus, wherein the target section includes the sputtering target according to any one of claims 1 to 7.