JP2002087878A - Plasma resistant member and its manufacturing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a plasma resistant member of low cost type which is also excellent in mechanical strengths such as bending strength and toughness and to provide its manufacturing method. SOLUTION: The plasma resistant member of this invention is distinguished by being substantially made of yttrium aluminum garnet sintered compact and by that the inside of the sintered compact or sintered compact structure is reinforced by proper selection of average crystalline grain size of the sintered compact and addition and incorporation or the like of a reinforcing agent.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plasma-resistant member exhibiting excellent plasma resistance in a halogen-based corrosive gas atmosphere and the like, and a method for producing the same.

[0002]

2. Description of the Related Art In a semiconductor device manufacturing process, a plasma generating mechanism is used for high integration in a CVD apparatus or a sputtering apparatus for forming a film on a semiconductor wafer or an etching apparatus for performing a fine processing on a semiconductor wafer. The semiconductor manufacturing apparatus provided is used. For example, as schematically shown in FIG. 1, a CVD apparatus using electron cyclotron resonance having a microwave generation chamber 1 and a processing chamber 2 is known.

Here, the microwave generation chamber 1 and the processing chamber 2 are separated from each other by a microwave introduction window 3, and a coil 4 for forming a magnetic field is arranged around the processing chamber 2. . Further, the processing chamber 2 has a gas supply port 5 for supplying a film-forming gas and an atmosphere gas, a gas exhaust port 6 for evacuating the processing chamber 2, and a monitoring window 7 for monitoring the inside of the processing chamber 2. In the chamber 2, a support / support for supporting the semiconductor wafer 8 directly or via a susceptor (not shown) is provided.
A mounting table 9 is provided.

[0004] Film formation by this CVD apparatus is performed as follows. That is, after the semiconductor wafer 8 is mounted on the support / mounting table 9 and the inside of the processing chamber 2 is evacuated,
A film forming gas and an atmosphere gas are supplied from the gas supply port 5. On the other hand, the microwave generated in the microwave generation chamber 1 is introduced into the processing chamber 2 through the microwave introduction window 3. In addition, by energizing the coil 4 with the introduction of the microwave and generating a magnetic field, high-density plasma is generated in the processing chamber 2. The plasma energy decomposes the film-forming gas into an atomic state, and deposits and forms a film on the surface of the semiconductor wafer 8.

In this type of manufacturing apparatus, a halogen-based corrosive gas such as a chlorine-based gas or a fluorine-based gas is used as a cleaning gas.
Monitoring window 7, microwave introduction window 3, support / mounting table 9, etc.
Components that are exposed to plasma in a corrosive gas atmosphere are required to have plasma resistance. In response to such a demand, a plasma-resistant member made of a sintered body of, for example, yttrium aluminum garnet has been proposed as the above-mentioned plasma-resistant member (JP-A-10-236).
871).

That is, a surface exposed to plasma in a halogen-based corrosive gas atmosphere is formed of a sintered body of yttrium aluminum garnet having a porosity of 3% or less, and has a center line average roughness (Ra) of 1 μm or less. Known plasma-resistant members are known.

[0007]

However, the yttrium aluminum garnet sintered body has excellent plasma resistance, but has a problem in that mechanical properties such as bending strength and fracture toughness are inferior. For example, while the fracture toughness value of the alumina sintered body is about 4 MN / m ^3/2 , the yttrium aluminum garnet sintered body is
It has a fracture toughness value of about 1 to ² MN / m ^3/2 and is fragile, and tends to break or break.

Here, the mechanical strength is inferior because, for example, the inner wall of the processing chamber 2, the monitoring window 7, the microwave introduction window 3,
In order to clean the support / mounting table 9 and the like, there is a possibility that damage and damage may occur in the process of attaching / detaching / removing those members, cleaning operations, and the like. Such a concern leads to a decrease in the operation rate of the manufacturing apparatus, and in addition to the relatively high cost of the yttrium aluminum garnet sintered body, leads to an increase in the manufacturing cost of the manufacturing apparatus or the semiconductor.

The present invention has been made in view of the above circumstances, and is a low-cost type plasma-resistant member having high plasma resistance and excellent mechanical strength such as bending strength and toughness. The purpose is to provide a method.

[0010]

According to a first aspect of the present invention, there is provided a plasma-resistant article comprising substantially a sintered body of yttrium aluminum garnet, wherein the sintered body has an average crystal grain size of 1 μm or less. It is a sex member.

The invention according to claim 1 is characterized in that the yttrium aluminum garnet sintered body has an average crystal grain size of 1 μm.
The following is based on the finding that they exhibit excellent bending strength and fracture toughness. That is, while the average crystal grain size of the vacuum-sintered or hydrogen-sintered yttrium aluminum garnet sintered body is about 2 to 5 μm, when the average crystal grain size of the sintered body is 1 μm or less, the fracture toughness value is It was made by paying attention to the significantly high price.
The sintered body having an average crystal grain size of 1 μm or less can be obtained by adding an auxiliary agent for suppressing crystal grain growth and hot pressing.

A second aspect of the present invention is a sintered yttrium aluminum garnet, wherein the sintered body contains at least one of particles, fibers, and whiskers having an aspect ratio of 2 or more in a dispersion of 5 to 80% by volume. A plasma-resistant member.

According to the second aspect of the present invention, while utilizing the plasma resistance of yttrium aluminum garnet,
The fracture toughness of the sintered body is improved and improved by means of fiber reinforcement. Here, as the property of the additive component, one or a mixture of two or more of particles, fibers, and whiskers having an aspect ratio of 2 or more is selected, and the dispersion content is 5 to 5.
The range is 80% by volume, more preferably 30 to 50% by volume.

That is, if it is less than 5% by volume, the improvement in fracture toughness is insufficient, and if it exceeds 80% by volume, the plasma resistance may be reduced.
Further, examples of such particles include particles made of yttrium aluminum garnet, alumina, zirconia, or the like, and yttrium aluminum garnet is preferable.

A third aspect of the present invention is a sintered body of yttrium aluminum garnet, wherein the sintered body contains at least one selected from zirconia and hafnium oxide in an amount of 0.15 to 5% by mass. A plasma-resistant member characterized by the following.

The third aspect of the present invention focuses on the fact that zirconia and hafnium oxide easily form a solid solution with yttria and that a ceramic system which easily forms the solid solution contributes to improvement in fracture toughness. is there. That is, when at least one kind of zirconia and hafnium oxide is dispersed and contained in the yttrium aluminum garnet sintered body in an amount of 0.15 to 5% by mass, the fracture toughness value of yttrium aluminum garnet is 2.5 without impairing the plasma resistance. It is based on the finding that it will be more than doubled.

The invention of claim 4 is a yttrium aluminum garnet sintered body containing 0.5 to 90% by mass of at least one selected from metal fluorides of groups 2a and 3a of the periodic table.

[0018] The invention according to claim 4 is characterized in that the periodic table 2a
By incorporating and dispersing a predetermined amount of metal fluorides of Group 3a and Group 3a, both plasma resistance and fracture toughness are improved. That is, a metal fluoride phase is formed on the yttrium aluminum garnet sintered body, thereby contributing to an improvement in plasma resistance. On the other hand, by dispersing metal fluoride in yttrium aluminum garnet, thermal expansion is lower than that of metal fluoride alone, and materials having different thermal expansion coefficients are combined / composited. Then, with the formation of the composite, the fracture toughness value increases, and it functions so as to exhibit excellent thermal shock resistance.

The invention according to claim 5 is a plasma-resistant member characterized by being a sintered body of yttrium aluminum garnet, wherein spherical sintered bodies are substantially uniformly dispersed and contained in the sintered body.

The invention according to claim 5 is intended to improve the fracture toughness value by making the pores dispersed and contained in the yttrium aluminum garnet sintered body act as a buffer against external impact. In other words, it is generally considered that a ceramic sintered body should be as dense as possible because pores or voids can easily roughen the surface and accelerate corrosion by plasma.

However, when the pores dispersed in the ceramic sintered body are substantially spherical, the spherical pores act as a buffer against impact, and even if cracks are formed, they are dispersed by the spherical pores and destroyed. -Damage and the like are suppressed and prevented, and as a result, the fracture toughness value is improved. In other words, the toughness is improved and improved while utilizing the plasma resistance of yttrium aluminum garnet.

The invention according to claim 6 is characterized in that the average particle size is 0.05 to
A step of granulating a viscous liquid containing 0.8 μm yttria particles with a spray drier, a step of sintering the granulated powder at a high temperature to grow the particles and preparing a raw material powder, and a binder for the raw material powder. A method for producing a plasma-resistant member, comprising: a step of preparing a composition by adding and mixing components; and a step of molding, firing and sintering the composition.

[0023] The invention according to claim 6 is the invention according to claim 2.
FIG. 6 is a means for manufacturing a plasma-resistant member according to the invention. That is, particles having an aspect ratio of 2 or more are contained in the yttrium aluminum garnet sintered body in an amount of 5 to 80% by volume.
In the production of the plasma-resistant member in which the components are dispersed and contained, the main point is that particles are grown at the stage of preparing the raw material powder to be in a state close to a single crystal.

Therefore, the average particle size is 0.05 to 0.8 μm.
When selecting the yttria particles to be granulated and preparing a sol or slurry when granulating with a spray drier, a viscous liquid such as polyaluminum chloride is used. Then, by setting the sintering temperature relatively high in the process of sintering and pulverizing the granulated powder to obtain a raw material powder, particles having an aspect ratio of 2 or more are grown. As a result of blending the garnet powder, a yttrium aluminum garnet sintered body (plasma-resistant member) having a high fracture toughness and containing particles having an aspect ratio of 2 or more dispersed therein is provided.

According to a seventh aspect of the present invention, there is provided a yttrium aluminum garnet powder having an average particle size of 0.8 μm or less, wherein at least one selected from metal fluorides of Groups 2a and 3a of the periodic table is added in an amount of 0.5 to 90 mass%. % To prepare a raw material composition by adding and mixing, a step of molding the raw material composition, and a step of sintering and firing the molded body by hot pressing at a temperature of at least 1250 ° C. A method for producing a plasma-resistant member characterized by the following.

According to the seventh aspect of the present invention, there is provided the fourth aspect of the present invention.
Is a means for producing the plasma-resistant member according to the invention of the present invention, and in the preparation stage of yttrium aluminum garnet raw material powder, the main point is to mix a required metal fluoride and hot press sinter this mixture system. . That is, the average particle size of yttrium aluminum garnet is selected within a predetermined range, and a predetermined amount of metal fluoride is dispersed and mixed and hot pressed.

In this hot press, metal fluoride (for example, calcium fluoride has a melting point of 1360 ° C.) having a lower melting point than yttrium aluminum garnet (melting point: about 1900 ° C.) Are uniformly dispersed and contained in the sintered body.

[0028] The invention of claim 8 is a method of adding and mixing 0.1 to 10% by volume of substantially spherical organic particles which are volatilized during calcination or sintering / firing to yttrium aluminum garnet powder having an average particle diameter of 0.8 µm or less. And preparing the raw material composition, forming the raw material composition, and sintering the formed body by evaporating the organic particles at a temperature of 500 to 1000 ° C. and leaving substantially spherical pores. And baking a plasma-resistant member.

[0029] The invention according to claim 8 is the invention according to claim 5.
Is a means for producing a plasma-resistant member according to the invention, wherein substantially spherical organic particles that are volatilized during calcination or sintering / firing are previously dispersed in yttrium aluminum garnet raw material powder, and the molded body is heated. In the sintering step, the essence is to volatilize the organic particles and leave them as spherical pores in the sintered body.

Here, the yttrium aluminum garnet powder is adjusted to have an average particle diameter of 0.8 μm or less, and the addition and mixing ratio of substantially spherical organic particles which are volatilized during calcination, sintering and sintering is 0.1 to 10% by volume. In each case, the required plasma-resistant member cannot be obtained. The substantially spherical organic particles are preferably made of a material such as starch, paper, cellulose, etc., which is easily vaporized as carbon dioxide at the temperature of calcination or sintering / firing.

The pores remaining due to the volatilization of the substantially spherical organic particles maintain a substantially spherical cavity.
Even when firing and sintering proceed, the entire peripheral surface is compressed, so that the pores still maintain a substantially spherical shape. Further, the pores in the sintered body are substantially spherical and exhibit a buffering action against impact.
A ninth aspect of the present invention is a plasma resistant member, characterized in that a fluoride layer is formed on at least a part of the surface of the yttrium aluminum garnet sintered body obtained in the fourth aspect. By forming a fluoride layer on the surface, plasma resistance can be further improved.

According to the first to fifth and ninth aspects of the present invention, the use of an appropriate reinforcing means provides excellent plasma resistance, and improves the fracture toughness value to reduce the possibility of damage by reducing the possibility of damage. It functions as a conductive member.

According to the sixth to eighth aspects of the present invention, it is possible to improve the yield of the plasma-resistant member which contributes to the suppression of the increase in the manufacturing cost of the semiconductor, and to provide mass production.

[0034]

Embodiments of the present invention will be described below.

Embodiment 1

The average particle diameter of 0.2μm yttrium aluminum garnet-based powder 99 mass%, MgSO ₄ · 7H
_An appropriate amount of ion-exchanged water and polyvinyl alcohol are added to a 1% by mass composition system in terms of magnesia in terms of magnesia, and stirred and mixed to prepare a slurry. Next, the prepared slurry was granulated by a spray dryer, and the obtained granulated powder was 9.807 × 10 ⁵ MPa (1000 kgf / c).
m ² ), molded with a thickness of 10 mm and a diameter of 100 mm
Were obtained respectively.

The molded body is calcined at 900 ° C.
After applying the grease treatment, hot press (pressure
9.807x10⁴~ 1.9614x10⁶MPa (1
00-2000kgf / cm²)), Temperature 1400-1
Sintering and firing at 650 ° C, pressurization and heating time of 0.2 to 3 hours
By performing the treatment, a plasma-resistant member was obtained. This anti-plasm
As a result of X-ray diffraction (XRD) of the
Was 0.8 μm. Also, bending strength
(MPa), and fracture toughness value K_IC(MN /
m ^3/2) Are shown in Table 1. What
For comparison, the average crystal grain size is 30 μm yttrium.
Combined with the mechanical properties of aluminum garnet based sintered body
The results are shown in Table 1.

[0038]

[Table 1]

Embodiment 2

A polyaluminum chloride viscous liquid containing about 30 to 70% by mass of yttria particles having an average particle diameter of 0.05 to 0.8 μm is granulated by a spray drier. Next, the granulated powder is sintered at a high temperature of 1750 to 1870 ° C. for about 4 hours to grow particles to obtain a raw material powder having an aspect ratio of 2.0 to 10. This raw material powder was added and mixed with a binder component (polyvinyl butyral) to yttrium aluminum garnet powder having an average particle diameter of 0.1 to 0.7 μm at a volume ratio of 10% to prepare a composition. 807 × 10 ⁵ Pa (1000k
gf / cm ² ), thickness 10 mm, diameter 1
A molded body of 00 mm was obtained.

After subjecting the compact to calcination and degreasing at a temperature of 900 ° C.,
Sintering and baking treatment was performed at a temperature of about 0.5 to 2 hours at a temperature of ° C. to obtain a plasma-resistant member. As a result of observing the plasma-resistant member with an electron microscope, the dispersed content of yttria having an aspect ratio of 2 or more in the sintered body was 15% by volume. Further, the bending strength (MPa) and the fracture toughness value K
Table 2 shows the results of measuring the _IC (MN / m ^3/2 ).
Shown in

[0042]

[Table 2]

Further, instead of the raw material powder having the aspect ratio of 2.0 to 10, the diameter is about 50 μm and the length is 100 to 1 μm.
5% by volume of alumina fiber of about 0000μm
(Example 2a), 40% (Example 2b), 80% (Example 2c), about 10 μm in diameter, 500 to 10,000 μ in length
40% of yttrium aluminum garnet of about m
(Example 2d) or about 10 μm in diameter and 500 in length
The mechanical property values of the yttrium aluminum garnet-based sintered body (Comparative Example 2) manufactured under the same conditions except that zirconia fibers of about 10000 μm and 40% by volume (Example 2e) were used were also added. It is shown in Table 2.

For comparison, Table 2 also shows the mechanical characteristics when no particles having an aspect ratio of 2 or more were added and compounded under the above manufacturing conditions (Comparative Example 2).

Embodiment 3

A yttrium aluminum garnet particle having an average particle diameter of 0.1 to 0.8 μm was prepared by adding and mixing a zirconia powder or a hafnium oxide powder, a binder resin and a solvent in a mass ratio of about 10% or 25%. The slurry is subjected to two types of granulation in a spray dryer. Next, 9.807 was added to the two types of granulated powder.
Molding was performed at a pressure of x10 ⁵ MPa (1000 kgf / cm ² ) to obtain molded bodies each having a thickness of 10 mm and a diameter of 100 mm.

After subjecting the above molded body to a calcining and degreasing treatment at a temperature of 900 ° C.,
A sintering and firing treatment was performed at a temperature of about 0.5 to 4 hours to obtain a plasma-resistant member. As a result of identifying this plasma resistant member by electron beam microanalysis (EPMA), the zirconia dispersed content in the sintered body was 10% by mass.
Or it was 25 mass%. Also, the fracture toughness value K _IC
Table 3 shows the results of measuring (MN / m ^3/2 ).

[0048]

[Table 3]

Further, one of the two sintered bodies is a sintered body.
A test piece of 2 mm in thickness and 10 x 10 mm square,
Cut out each and attach it to a parallel plate type RIE device.
13.56 MHz wave number, high frequency source 500, high frequency
EAS 300W, CF₄/ O ₂/ Ar = 30: 20: 5
0, at a gas pressure of 0.6665 Pa (5 mTorr)
Etching rate when conducting plasma exposure test (n
m / hour) are shown in Table 3. In addition, zirconia powder
Powder and hafnium oxide powder as a mixed system
, Similar results were obtained.

Embodiment 4

To a composition system containing 85% by mass of yttrium aluminum-net particles having an average particle size of 0.3 μm and 13% by mass of calcium fluoride particles, an appropriate amount of ion-exchanged water and 2% by mass of polyvinyl alcohol are added, followed by stirring and mixing. To prepare a slurry. Next, each of the prepared slurries was granulated by a spray drier, and the obtained granulated powder was 9.807 × 10 ⁵ MPa (10
00 kgf / cm ² ), and molded to a thickness of 10 mm.
Molded articles each having a diameter of 100 mm were obtained.

After subjecting the above molded body to calcination and degreasing at a temperature of 900 ° C.,
Hot-pressing treatment was performed at the temperature described above to obtain a plasma-resistant member. As a result of identifying this plasma resistant member by electron beam microanalysis (EPMA), a calcium fluoride phase was uniformly present inside the sintered body (plasma resistant member). The fracture toughness value K _IC (MN
/ ^{M 3/2} ) are shown in Table 4.

[0053]

[Table 4]

Further, a thickness of 2 mm, 1 mm
A test piece of 0x10mm square was cut out and parallel plate type RIE
Attached to the device, frequency 13.56 MHz, high frequency source 500, high frequency bias 300 W, CF ₄ / O ₂ / A
r = 30: 20: 50, gas pressure 0.6665 Pa (5 m
Table 4 also shows the etching rate (nm / hour) when the plasma exposure test was performed under the conditions of (Torr). Similar results were obtained when other metal fluorides of the 2a or 3a group of the periodic table, such as magnesium fluoride, were added instead of the calcium fluoride powder. Incidentally, with respect to this way plasma resistance member obtained, for example, a CF ₄ 100 sccm (ml
/ Min), place the member in a vacuum chamber, set the pressure to 5.332 Pa (40 mTorr), apply 500 W of inductively-coupled high-frequency in the vacuum chamber, generate plasma, and generate plasma for several minutes to several hours. By exposing, for example, a fluoride layer (several tens nm or more in thickness) can be formed on the surface.

In a composition system containing yttrium aluminum garnet particles having an average particle diameter of 0.3 μm and starch particles having an average particle diameter of about 100 μm in an amount of 0.5% by mass or 10% by mass, an appropriate amount of ion-exchanged water and polyvinyl alcohol 2 are added.
% By mass, and stirred and mixed to prepare two types of slurries. Next, each of the prepared slurries was granulated with a spray drier, and the obtained granulated powder was granulated with a CIP press.
9.807 × 10 ⁵ MPa (1000 kgf / cm ² )
To obtain molded articles each having a thickness of 10 mm and a diameter of 100 mm.

After subjecting the above compact to calcination and degreasing at a temperature of 900 ° C.,
Sintering and baking treatment was performed at a temperature of 0 ° C. to obtain a plasma-resistant member. This plasma resistant member is connected to an electron microscope (SE
As a result of observation in (M), in the sintered body (plasma-resistant member), a substantially spherical pore having a diameter of about 10 μm was substantially uniformly dispersed.

That is, when the cross section of the sintered body was observed and imaged with an electron microscope, it was confirmed that the entire sintered body was a plasma-resistant member made of an yttrium aluminum garnet base material containing fine spherical pores dispersed therein. . The fracture toughness value K _IC (MN / m
^3/2 ) is shown in Table 5.

[0058]

[Table 5]

Further, a thickness of 2 mm, 1 mm
A test piece of 0x10mm square was cut out and parallel plate type RIE
Attached to the device, frequency 13.56 MHz, high frequency source 500, high frequency bias 300 W, CF ₄ / O ₂ / A
r = 30: 20: 50, gas pressure 0.6665 Pa (5 m
Table 5 also shows the etching rate (nm / hour) when the plasma exposure test was performed under the conditions of (Torr). Similar results were obtained when a spherical substance, such as cellulose, which was volatilized at the calcination or firing temperature of ceramics was added and contained instead of the above-mentioned spherical starch particles.

The present invention is not limited to the above embodiment, and various modifications can be made without departing from the spirit of the invention.

[0061]

According to the first to fifth aspects of the present invention, not only the surface exposed to plasma is formed with an yttrium aluminum garnet layer having excellent plasma resistance, but also the mechanical strength such as fracture toughness is improved. The configuration is improved and improved. Therefore, the occurrence of damage or breakage in a cleaning operation or the like is eliminated, and there is no possibility of causing particle contamination.

That is, while suppressing an increase in the cost of manufacturing a semiconductor manufacturing apparatus or a semiconductor, it effectively contributes to the manufacture and processing of a semiconductor having high performance and reliability without adversely affecting the quality and precision of film formation. Plasma resistant member can be provided.

According to the sixth to eighth aspects of the present invention, a highly durable plasma-resistant member that contributes to suppressing an increase in semiconductor manufacturing cost can be provided with high yield and mass production.

[Brief description of the drawings]

FIG. 1 is a sectional view showing a schematic configuration of a CVD apparatus.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 ... Microwave generation chamber 2 ... Processing chamber 3 ... Microwave introduction window 4 ... Magnetic field forming coil 5 ... Gas supply port 6 ... Gas discharge port 7 ... Monitoring window 8 ... Semiconductor wafer 9 ... Semiconductor wafer support / mounting table

 ──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Mitsuhiro Fujita 30 Soya, Hadano-shi, Kanagawa Toshiba Ceramics Co., Ltd. (72) Inventor Shuzo Shimai 30 Soya, Hadano-shi, Kanagawa Toshiba Ceramics Co., Ltd. (72) Inventor Keiji Morita 30 Soya, Hadano-shi, Kanagawa Toshiba Ceramics Co., Ltd. (72) Inventor Shunichi 30 Soya, Hadano-shi, Kanagawa Toshiba Ceramics Co., Ltd. (72) Inventor Shuichi Saito 33, Shinisogo-cho, Isogo-ku, Yokohama-shi, Kanagawa Prefecture Inside the Toshiba Production Technology Center (72) Inventor Katsuaki Aoki 33, Shinisogo-cho, Isogo-ku, Yokohama-shi, Kanagawa Toshiba Production Technology Inside the center (72) Inventor Eriko Nishimura 33, Shinisogo-cho, Isogo-ku, Yokohama, Kanagawa Earth Co., Ltd. Toshiba production technology center in the F-term (reference) 4G031 AA02 AA07 AA08 AA10 AA12 AA29 BA01 BA20 CA07 GA01 GA03 GA06 GA11 GA12 4K029 AA06 AA24 BD01 DC27 4K030 CA04 CA12 KA14 KA46

Claims (9)

[Claims] 1. A plasma-resistant member substantially made of a sintered body of yttrium aluminum garnet, wherein the sintered body has an average crystal grain size of 1 μm or less. 2. A sintered body of yttrium aluminum garnet, wherein at least one of particles, fibers, and whiskers having an aspect ratio of 2 or more is contained in the sintered body in an amount of 5 to 8%.
A plasma resistant member containing 0% by volume dispersed therein. 3. A sintered body of yttrium aluminum garnet, wherein at least one selected from zirconia and hafnium oxide is dispersed and contained in the sintered body in an amount of 0.15 to 5% by mass. Plasma material. 4. 0.5% to 90% by mass of at least one selected from metal fluorides of groups 2a and 3a of the periodic table
A plasma-resistant member comprising a yttrium aluminum garnet sintered body containing dispersed therein. 5. A plasma-resistant member which is a sintered body of yttrium aluminum garnet, wherein spherical pores are substantially uniformly dispersed and contained in the sintered body. 6. The method for producing a plasma-resistant member according to claim 2, wherein a viscous liquid containing yttria particles having an average particle diameter of 0.05 to 0.8 μm is granulated by a spray drier. A step of preparing a raw material powder by sintering the granulated powder at a high temperature to grow particles, and a step of preparing a composition by mixing yttrium aluminum garnet powder with the raw material powder, adding and mixing a binder component, And b. Sintering and sintering the composition. 7. Addition and mixing of 0.5 to 90% by mass of at least one selected from metal fluorides of groups 2a and 3a of the periodic table to yttrium aluminum garnet powder having an average particle diameter of 0.8 μm or less. A step of preparing a raw material composition by heating, a step of forming the raw material composition, and a step of sintering and firing the molded body by hot pressing at a temperature of at least 1250 ° C. A method for producing a plasma member. 8. A raw material composition is prepared by adding and mixing 0.1 to 10% by volume of substantially spherical organic particles volatilized during sintering and firing to yttrium aluminum garnet powder having an average particle diameter of 0.8 μm or less. A step of molding the raw material composition, and a step of sintering and firing the molded body at a temperature of 500 to 1000 ° C. to volatilize the organic particles and to leave substantially spherical pores. A method for producing a plasma-resistant member, comprising: 9. A yttrium aluminum garnet sintered body containing 0.5 to 990% by mass of at least one selected from metal fluorides of groups 2a and 3a of the periodic table, and at least a part of the surface thereof. The plasma-resistant member according to claim 4, wherein a fluoride layer is formed.