JP2002084461A - Image pickup element drive circuit, image pickup element test unit - Google Patents

Image pickup element drive circuit, image pickup element test unit

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Publication number
JP2002084461A
JP2002084461A JP2000271629A JP2000271629A JP2002084461A JP 2002084461 A JP2002084461 A JP 2002084461A JP 2000271629 A JP2000271629 A JP 2000271629A JP 2000271629 A JP2000271629 A JP 2000271629A JP 2002084461 A JP2002084461 A JP 2002084461A
Authority
JP
Japan
Prior art keywords
image pickup
overflow
diode
voltage
image sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2000271629A
Other languages
Japanese (ja)
Other versions
JP4673477B2 (en
Inventor
Masashi Kameyama
雅志 亀山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advantest Corp
Original Assignee
Advantest Corp
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Filing date
Publication date
Application filed by Advantest Corp filed Critical Advantest Corp
Priority to JP2000271629A priority Critical patent/JP4673477B2/en
Publication of JP2002084461A publication Critical patent/JP2002084461A/en
Application granted granted Critical
Publication of JP4673477B2 publication Critical patent/JP4673477B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Abstract

PROBLEM TO BE SOLVED: To provide an image pickup element drive circuit that can prevent an overflow voltage given to an image pickup element from being fluctuated. SOLUTION: In the image pickup element drive circuit of a configuration such that a voltage source applies an overflow voltage VOFD to an overflow voltage supply terminal TOFD of an image pickup element 10 through a parallel circuit consisting of a diode D1 and a resistor R1, a regulated current circuit is provided between a common level point and a connection point connecting the diode D1 to the overflow voltage supply terminal, this regulated current circuit supplies a regulated current to the diode D1 and the regulated current stabilizes a forward voltage drop of the diode so as to eliminate fluctuations in the overflow voltage.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】この発明は一般にCCD(Ch
arge Couple Device) と呼ばれている固体撮像素子を動
作状態に維持する撮像素子駆動回路及びこの撮像素子駆
動回路を搭載した撮像素子試験装置に関する。
The present invention generally relates to a CCD (Ch
The present invention relates to an image sensor driving circuit for maintaining a solid-state image sensor called an “arge couple device” in an operating state, and an image sensor testing apparatus equipped with the image sensor driving circuit.

【0002】[0002]

【従来の技術】図3に従来の撮像素子駆動回路の構成を
示す。図中10はCCD等と呼ばれている撮像素子、2
0はこの撮像素子10にオーバーフロー電圧VOFD を印
加する駆動回路を示す。撮像素子10には、このオーバ
ーフロー電圧VOFD を印加する駆動回路20の他に各種
の駆動回路を接続して駆動するが、この発明の対象はオ
ーバーフロー電圧VOFD を印加する駆動回路20である
ので、この駆動回路20のみを示している。
2. Description of the Related Art FIG. 3 shows a configuration of a conventional image sensor driving circuit. In the figure, reference numeral 10 denotes an image pickup device called a CCD or the like, 2
Reference numeral 0 denotes a drive circuit for applying the overflow voltage V OFD to the image pickup device 10. The image sensor 10 is driven by connecting various drive circuits in addition to the drive circuit 20 for applying the overflow voltage V OFD. However, since the object of the present invention is the drive circuit 20 for applying the overflow voltage V OFD . , Only the drive circuit 20 is shown.

【0003】オーバーフロー電圧VOFD とは撮像素子1
0に入力される光量が規定よりオーバーした場合(この
ときの入力光量を飽和露光量と呼んでいる)、光電変換
部に発生する過剰な電荷をオーバーフロードレインに排
出させるための閾値を与える電圧である。このオーバー
フロー電圧VOFD を一定値に維持しておくことにより、
入力光−出力電圧の直線特性の範囲を一定値に維持する
ことができる。オーバーフロー電圧VOFD は電圧源21
からダイオードD1と抵抗器R1から成る並列回路を通
じて撮像素子10のオーバーフロー供給端子TOFD に印
加される。
[0003] The overflow voltage V OFD is defined as
When the amount of light input to 0 exceeds a specified value (the input amount of light at this time is referred to as a saturated exposure amount), a voltage that gives a threshold value for discharging excess charges generated in the photoelectric conversion unit to the overflow drain is used. is there. By maintaining this overflow voltage V OFD at a constant value,
The range of the linear characteristic of the input light-output voltage can be maintained at a constant value. The overflow voltage V OFD is equal to the voltage source 21
Is applied to an overflow supply terminal T OFD of the image sensor 10 through a parallel circuit including a diode D1 and a resistor R1.

【0004】ここでダイオードD1が用いられる理由を
説明する。つまり、オーバーフロー電圧供給端子TOFD
にはオーバーフロー電圧VOFD の他にシャッタパルスP
CCも印加される。このシャッタパルスPCCの印加によ
り、各光電変換部に蓄積されている電荷を瞬時に放出
(リセット)させ、その直後に入力された光量に従って
蓄積された電荷を読み出すことによって、瞬時にとらえ
た画像データを得ることを目的としている。つまり、移
動している物体の瞬時をとらえ、流線ボケの少ない画像
を得ることを目的として考えられたシャッタ機構であ
る。
Here, the reason why the diode D1 is used will be described. That is, the overflow voltage supply terminal T OFD
Has an overflow voltage V OFD and a shutter pulse P
CC is also applied. By the application of the shutter pulse PCC, the electric charge accumulated in each photoelectric conversion unit is instantaneously released (reset), and immediately after that, the accumulated electric charge is read out according to the input light amount, thereby instantaneously capturing the image. It is aimed at obtaining data. In other words, the shutter mechanism is conceived for the purpose of capturing an instant of a moving object and obtaining an image with less blur of a streamline.

【0005】シャッタパルスはドライバ22からコンデ
ンサCを通じてオーバーフロー電圧供給端子TOFD に印
加される。このシャッタパルスは正極性のパルスで与え
られ、非印加時点ではドライバ22の出力端子はL論理
電位PLを出力し、シャッタパルスの出力時点ではパル
スの尖頭値はH論理電位を与えるPHとなる。従って、
シャッタパルスPCCが非出力時点ではオーバーフロー電
圧供給端子TOFD には電圧源21から一定電圧のオーバ
ーフロー電圧VOFD が印加されており、またシャッタパ
ルスPCCの印加時点ではオーバーフロー電圧VOFD にシ
ャッタパルスP CCの振幅が加算されて印加される(図4
参照)。シャッタパルスPCCが出力される時点でダイオ
ードD1はオフとなり、電圧源21をドライバ22の負
荷から切離し、少ないパワーで撮像素子10にシャッタ
パルスPCCを印加するためにダイオードD1が用いられ
ている。
The shutter pulse is supplied from the driver 22
Overflow voltage supply terminal TOFDMark on
Be added. This shutter pulse is a positive pulse
When no voltage is applied, the output terminal of the driver 22 is at L logic.
Outputs the potential PL, and outputs the pulse
The peak value of the pulse becomes PH giving the H logic potential. Therefore,
Shutter pulse PCCAt the time of non-output
Pressure supply terminal TOFDOver a certain voltage from the voltage source 21
-Flow voltage VOFDIs applied, and the shutter
Luth PCCAt the time of application of the overflow voltage VOFDNishi
Shutter pulse P CCAre added (FIG. 4)
reference). Shutter pulse PCCIs output when
The node D1 is turned off, and the voltage source 21 is connected to the negative terminal of the driver 22.
Separates from the load and shutters the image sensor 10 with less power
Pulse PCCDiode D1 is used to apply
ing.

【0006】[0006]

【発明が解決しようとする課題】撮像素子10のオーバ
ーフロー電圧供給端子TOFD から内部を見たインピーダ
ンス(直流抵抗値)は、どの撮像素子10であっても一
定値となるように製造されている。しかしながら、製造
上のバラツキ等によってわずかではあるが、オーバーフ
ロー電圧供給端子TOFD から内部を見たインピーダンス
は一様でなく、各撮像素子間でバラツキを持つ、このた
め撮像素子10の動作を試験して新たな撮像素子に交換
するごとにダイオードD1を流れる電流が変動し、この
電流の変動によりオーバーフロー電圧VOFD も変動する
不都合が生じる。
The impedance (DC resistance value) as viewed from the overflow voltage supply terminal T OFD of the imaging device 10 is manufactured to be constant regardless of the imaging device 10. . However, although slightly due to manufacturing variations, the impedance seen from the overflow voltage supply terminal T OFD to the inside is not uniform, and there is variation among the image sensors. Therefore, the operation of the image sensor 10 was tested. Therefore, every time a new image sensor is replaced, the current flowing through the diode D1 fluctuates, and the fluctuation of the current causes a problem that the overflow voltage V OFD also fluctuates.

【0007】つまり、撮像素子10を順次試験する場
合、撮像素子の試験が終了すると、次に新しい撮像素子
10を試験装置に装着し、新たに装着された撮像素子1
0を試験する。このために撮像素子10が交換されるご
とに、オーバーフロー電圧供給端子TOFD とダイオード
D1を通じて流れる電流Ic は撮像素子10の抵抗値
(オーバーフロー電圧供給端子TOFD から見た内部イン
ピーダンス)の値に通じて変化し、これによりオーバー
フロー電圧VOFD も変動してしまう欠点がある。
In other words, when testing the image pickup device 10 sequentially, when the test of the image pickup device is completed, a new image pickup device 10 is next mounted on the test apparatus, and the newly mounted image pickup device 1 is mounted.
Test for 0. Each time the imaging device 10 is exchanged for this, the value of the resistance value of the current I c is the imaging device 10 that flows through the overflow voltage supply terminal T OFD and the diode D1 (internal impedance viewed from the overflow voltage supply terminal T OFD) And the overflow voltage V OFD also fluctuates.

【0008】この様子を図5を用いて説明する。試験す
べき撮像素子10に流れる電流IcがダイオードD1の
オンの状態とオフの状態のほぼ中間点に対応する電流値
Oであった場合には、ダイオードD1の電流−電圧特
性曲線の彎曲部分で動作することになる。この動作電流
O で動作した場合、撮像素子10の内部抵抗のバラツ
キによってわずかでも電流IO が+ΔIO ,−ΔIO
変動すると、ダイオードD1の順方向電圧降下VD1が大
きく変動し、この変動によって撮像素子10に印加され
るオーバーフロー電圧VOFD も大きく変動してしまうこ
とになる。
This situation will be described with reference to FIG. When the current I c flowing into the imaging device 10 to be tested were current value I O corresponding to approximately the midpoint of the on state and off state of the diode D1, the current of the diode D1 - curvature of voltage characteristic curve Will work on the part. In the case of operating with this operating current I O , if the current I O fluctuates slightly to + ΔI O and −ΔI O due to the variation of the internal resistance of the image sensor 10, the forward voltage drop V D1 of the diode D1 fluctuates greatly. Due to the fluctuation, the overflow voltage V OFD applied to the image sensor 10 also largely fluctuates.

【0009】試験すべき撮像素子10に印加するオーバ
ーフロー電圧VOFD が撮像素子ごとに変動すると、各撮
像素子ごとに光電変換特性の直線範囲が変動するため、
撮像素子ごとに光電変換特性の範囲が異なる状態で試験
が行われることになり、均一な試験を行うことができな
い不都合が生じる。従って、従来は試験しようとする撮
像素子10ごとにオーバーフロー電圧供給端子TOFD
内部インピーダンスを予め測定し、その測定された内部
インピーダンスに従って電圧源21に設定する電圧を調
整し、オーバーフロー電圧VOFD が一定値になるように
係数管理する必要があった。
When the overflow voltage V OFD applied to the image sensor 10 to be tested varies for each image sensor, the linear range of the photoelectric conversion characteristic varies for each image sensor.
The test is performed in a state where the range of the photoelectric conversion characteristics is different for each image pickup device, and there is a disadvantage that a uniform test cannot be performed. Therefore, conventionally measured in advance an internal impedance of the overflow voltage supply terminal T OFD every imaging device 10 to be tested, by adjusting the voltage to be set to a voltage source 21 in accordance with the measured internal impedance, the overflow voltage V OFD is It was necessary to manage the coefficients so as to be constant.

【0010】この発明の目的は、予めオーバーフロー電
圧供給端子TOFD の内部インピーダンスを測定する必要
がなく、また、この測定結果により電圧源21の電圧を
設定変更する必要のない撮像素子駆動回路と、この撮像
素子駆動回路を搭載した撮像素子試験装置を提供しよう
とするものである。
An object of the present invention is to provide an image pickup device driving circuit which does not need to measure the internal impedance of the overflow voltage supply terminal T OFD in advance and does not need to change the voltage of the voltage source 21 based on the measurement result. It is an object of the present invention to provide an image sensor test apparatus equipped with the image sensor drive circuit.

【0011】[0011]

【課題を解決するための手段】この発明の請求項1で
は、撮像素子のオーバーフロー電圧供給端子にダイオー
ドと抵抗器を通じてオーバーフロー電圧VOFD を印加
し、撮像素子を動作状態に維持する構造の撮像素子駆動
回路において、ダイオードとオーバーフロー電圧供給端
子との接続点と共通電位点との間に定電流回路を接続し
た構造の撮像素子駆動回路を提案するものである。
According to a first aspect of the present invention, there is provided an image sensor having a structure in which an overflow voltage V OFD is applied to an overflow voltage supply terminal of the image sensor through a diode and a resistor to maintain the image sensor in an operating state. The present invention proposes an image sensor driving circuit having a structure in which a constant current circuit is connected between a connection point between a diode and an overflow voltage supply terminal and a common potential point.

【0012】この発明の請求項2では、請求項1記載の
撮像素子駆動回路を搭載し、被試験撮像素子が順次交換
されてもオーバーフロー電圧供給端子に供給されるオー
バーフロー電圧が一定値を維持する構造とした撮像素子
試験装置を提案するものである。
According to a second aspect of the present invention, the imaging device driving circuit according to the first aspect is mounted, and the overflow voltage supplied to the overflow voltage supply terminal maintains a constant value even when the imaging devices under test are sequentially replaced. The present invention proposes an imaging device test apparatus having a structure.

【0013】[0013]

【作 用】この発明による請求項1で提案した撮像素子
駆動回路の構成によれば、定電流回路を流れる電流がダ
イオードを通じて流れるため、ダイオードは常時順方向
電流が流れた状態に維持される。この結果、負荷となる
撮像素子のオーバーフロー電圧供給端子の内部インピー
ダンスが多少変動しても、ダイオードの順方向電圧降下
は一定値を維持する。この結果、このダイオードを通じ
て印加されるオーバーフロー電圧VOFD は一定値を維持
することができる。
According to the configuration of the image pickup device drive circuit proposed in claim 1 of the present invention, the current flowing through the constant current circuit flows through the diode, so that the diode is always maintained in the state where the forward current flows. As a result, the forward voltage drop of the diode maintains a constant value even if the internal impedance of the overflow voltage supply terminal of the image sensor serving as a load fluctuates somewhat. As a result, the overflow voltage V OFD applied through this diode can maintain a constant value.

【0014】この発明の請求項2で提案する撮像素子試
験装置によれば、被試験撮像素子が順次交換され、この
交換ごとにオーバーフロー電圧供給端子の内部インピー
ダンスが変動しても、オーバーフロー電圧VOFD を供給
するダイオードの順方向電圧降下は一定値に維持され続
ける。この結果、被試験撮像素子が交換されても、各撮
像素子のオーバーフロー電圧供給端子に印加されるオー
バーフロー電圧は一定値に維持され、特定した光電変換
特性上で試験を行うことができる利点が得られる。
According to the imaging device test apparatus proposed in claim 2 of the present invention, the imaging device under test is sequentially replaced, and even if the internal impedance of the overflow voltage supply terminal fluctuates for each replacement, the overflow voltage V OFD , The forward voltage drop of the diode supplying the constant voltage is maintained at a constant value. As a result, even if the image sensor under test is replaced, the overflow voltage applied to the overflow voltage supply terminal of each image sensor is maintained at a constant value, and the advantage that a test can be performed on the specified photoelectric conversion characteristics is obtained. Can be

【0015】[0015]

【発明の実施の形態】図1にこの発明による撮像素子駆
動回路の一実施例を示す。図3と対応する部分には同一
符号を付して示す。この発明の請求項1では電圧源21
からダイオードD1と抵抗器R1を通じて撮像素子10
のオーバーフロー電圧供給端子TOFDにオーバーフロー
電圧VOFD を印加する構造の撮像素子駆動回路20にお
いて、ダイオードD1とオーバーフロー電圧供給端子T
OFD との接続点と共通電位点との間に定電流回路23を
接続した構造とした点を特徴とするものである。
FIG. 1 shows an embodiment of an image sensor driving circuit according to the present invention. Parts corresponding to those in FIG. 3 are denoted by the same reference numerals. According to claim 1 of the present invention, the voltage source 21
From the imaging device 10 through the diode D1 and the resistor R1
In the imaging device drive circuit 20 having a structure in which the overflow voltage V OFD is applied to the overflow voltage supply terminal T OFD of the diode D1 and the overflow voltage supply terminal T OFD ,
It is characterized in that a constant current circuit 23 is connected between a connection point with the OFD and a common potential point.

【0016】定電流回路23はダイオードD1を通じて
電圧源21から一定の電流IS を吸い込む動作を行う。
定電流回路23で一定の電流IS を吸い込むことによ
り、ダイオードD1は一定の電流IS で決まる動作点で
動作する。この動作点で決まる電圧降下VD2は電流IS
が一定値に維持されている限りにおいては、図2に示す
ように一定電圧VD2に維持される。更に、ダイオードD
1には一定電流IS に加えて撮像素子10のオーバーフ
ロー電圧供給端子TOFD に流れる電流IO が流れ。結局
ダイオードD1に流れる電流はI1 =I0 +IS とな
る。一定電流IS と電流IO とを比較してIS >IO
関係に設定することにより、電流IO が−ΔI1 ,−Δ
1 に変動しても、ダイオードD1の順方向の電圧降下
D2の変動はわずかな変動に抑えることができる。
The constant current circuit 23 performs an operation of sucking the constant current I S from the voltage source 21 through the diode D1.
By sucking the constant current I S at a constant current circuit 23, the diode D1 operates at an operating point determined by the constant current I S. The voltage drop V D2 determined by this operating point is the current I S
Is maintained at a constant voltage VD2 as shown in FIG. Further, the diode D
1, a current I O flowing to the overflow voltage supply terminal T OFD of the image sensor 10 flows in addition to the constant current I S. Eventually, the current flowing through the diode D1 is I 1 = I 0 + I S. By comparing the constant current I S with the current I O and setting the relationship of I S > I O , the current I O becomes −ΔI 1 , −Δ
Be varied to I 1, variations of the forward voltage drop V D2 of the diode D1 can be suppressed to small variations.

【0017】[0017]

【発明の効果】以上説明したように、この発明によれば
ダイオードD1を通じて撮像素子10のオーバーフロー
電圧VOFD を印加する撮像素子駆動回路において、オー
バーフロー電圧供給端子から内部を見たインピーダンス
が各撮像素子ごとにバラツキを有していても、ダイオー
ドには定電流回路23により撮像素子10に流れる電流
O より大きい一定電流IS を流した構造としたから、
撮像素子10に流れ込む電流IO が多少変動しても、ダ
イオードD1の順方向電圧降下VD2の変動を小さい値に
抑えることができる。
As described above, according to the present invention, in the image pickup device driving circuit for applying the overflow voltage V OFD of the image pickup device 10 through the diode D1, the impedance seen from the overflow voltage supply terminal to each image pickup device Each diode has a structure in which a constant current I S larger than the current I O flowing to the image sensor 10 flows through the diode by the constant current circuit 23.
Be varied current I O flowing into the imaging device 10 somewhat, it is possible to suppress the variation of the forward voltage drop V D2 of the diode D1 to a small value.

【0018】従って、この発明によればどの撮像素子に
対してもほぼ一定の値のオーバーフロー電圧VOFD を与
えた状態で試験を行うことができ、均一な条件に揃った
状態で試験を行うことができる利点が得られる。なお、
上述ではこの発明による撮像素子駆動回路を撮像素子試
験装置に適用した場合を説明したが、試験装置に限ら
ず、他の装置にも適用できることは容易に理解すること
ができよう。
Therefore, according to the present invention, a test can be performed in a state where an almost constant value of the overflow voltage V OFD is applied to any image pickup device, and the test can be performed in a state where uniform conditions are satisfied. The advantage that can be obtained is obtained. In addition,
Although the case where the image sensor driving circuit according to the present invention is applied to the image sensor testing apparatus has been described above, it can be easily understood that the present invention is not limited to the testing apparatus but can be applied to other apparatuses.

【図面の簡単な説明】[Brief description of the drawings]

【図1】この発明による撮像素子駆動回路の一実施例を
説明するための接続図。
FIG. 1 is a connection diagram for explaining an embodiment of an image sensor driving circuit according to the present invention.

【図2】この発明の要部の動作を説明するためのグラ
フ。
FIG. 2 is a graph for explaining the operation of the main part of the present invention.

【図3】従来の技術を説明するための接続図。FIG. 3 is a connection diagram for explaining a conventional technique.

【図4】図3の動作を説明するための波形図。FIG. 4 is a waveform chart for explaining the operation of FIG. 3;

【図5】従来の技術の欠点を説明するためのグラフ。FIG. 5 is a graph for explaining a drawback of the related art.

【符号の説明】[Explanation of symbols]

10 撮像素子 VOFD オーバーフロー電圧 TOFD オーバーフロー電圧供給端子 20 撮像素子駆動回路 21 電圧源 22 ドライバ 23 定電流回路 D1 ダイオード R1 抵抗器 Reference Signs List 10 Image sensor V OFD overflow voltage T OFD overflow voltage supply terminal 20 Image sensor drive circuit 21 Voltage source 22 Driver 23 Constant current circuit D1 Diode R1 Resistor

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 撮像素子のオーバーフロー電圧供給端子
にダイオードと抵抗器を通じてオーバーフロー電圧を印
加して撮像素子を動作状態に維持する構造の撮像素子駆
動回路において、 上記ダイオードと上記オーバーフロー電圧供給端子との
接続点と共通電位との間に定電流回路を接続した構造と
したことを特徴とする撮像素子駆動回路。
1. An image sensor driving circuit having a structure in which an overflow voltage is applied to an overflow voltage supply terminal of an image sensor through a diode and a resistor to maintain the image sensor in an operating state. An image sensor driving circuit having a structure in which a constant current circuit is connected between a connection point and a common potential.
【請求項2】 請求項1記載の撮像素子駆動回路を搭載
し、被試験撮像素子が順次交換されても、上記オーバー
フロー電圧供給端子に供給されるオーバーフロー電圧が
一定値を維持する構造としたことを特徴とする撮像素子
試験装置。
2. An image pickup device driving circuit according to claim 1, wherein the overflow voltage supplied to the overflow voltage supply terminal maintains a constant value even when the image pickup device under test is sequentially replaced. An imaging device test apparatus characterized by the above-mentioned.
JP2000271629A 2000-09-07 2000-09-07 Image sensor drive circuit, image sensor test apparatus Expired - Fee Related JP4673477B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000271629A JP4673477B2 (en) 2000-09-07 2000-09-07 Image sensor drive circuit, image sensor test apparatus

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Application Number Priority Date Filing Date Title
JP2000271629A JP4673477B2 (en) 2000-09-07 2000-09-07 Image sensor drive circuit, image sensor test apparatus

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JP2002084461A true JP2002084461A (en) 2002-03-22
JP4673477B2 JP4673477B2 (en) 2011-04-20

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Country Link
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007081943A (en) * 2005-09-15 2007-03-29 Fujifilm Holdings Corp Solid-state imaging module

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS633565A (en) * 1986-06-23 1988-01-08 Mitsubishi Electric Corp Driving circuit for vertical transfer part in solid-state image pickup element
JPH03136481A (en) * 1989-10-20 1991-06-11 Sanyo Electric Co Ltd Ccd driving circuit
JPH0471075U (en) * 1990-10-31 1992-06-23
JPH06334493A (en) * 1993-05-20 1994-12-02 Sony Tektronix Corp Clamp circuit
JPH0832065A (en) * 1994-07-15 1996-02-02 Sony Corp Miselement and analog misfet using the same, threshold voltage collecting method, channel potential adjusting method, bias circuit, charge transfer device, solid image pick-up device, charge detector
JPH09121310A (en) * 1995-10-24 1997-05-06 Sony Corp Semiconductor device
JPH10145684A (en) * 1996-11-13 1998-05-29 Sony Corp Bias fluctuation suppression circuit in solid-state image pickup element
JP2000012819A (en) * 1998-06-17 2000-01-14 Nikon Corp Solid-state image pickup element
JP2000013640A (en) * 1998-06-18 2000-01-14 Matsushita Electric Ind Co Ltd Clamping circuit
JP2000223688A (en) * 1999-01-29 2000-08-11 Sony Corp Solid state image pickup device and camera system

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS633565A (en) * 1986-06-23 1988-01-08 Mitsubishi Electric Corp Driving circuit for vertical transfer part in solid-state image pickup element
JPH03136481A (en) * 1989-10-20 1991-06-11 Sanyo Electric Co Ltd Ccd driving circuit
JPH0471075U (en) * 1990-10-31 1992-06-23
JPH06334493A (en) * 1993-05-20 1994-12-02 Sony Tektronix Corp Clamp circuit
JPH0832065A (en) * 1994-07-15 1996-02-02 Sony Corp Miselement and analog misfet using the same, threshold voltage collecting method, channel potential adjusting method, bias circuit, charge transfer device, solid image pick-up device, charge detector
JPH09121310A (en) * 1995-10-24 1997-05-06 Sony Corp Semiconductor device
JPH10145684A (en) * 1996-11-13 1998-05-29 Sony Corp Bias fluctuation suppression circuit in solid-state image pickup element
JP2000012819A (en) * 1998-06-17 2000-01-14 Nikon Corp Solid-state image pickup element
JP2000013640A (en) * 1998-06-18 2000-01-14 Matsushita Electric Ind Co Ltd Clamping circuit
JP2000223688A (en) * 1999-01-29 2000-08-11 Sony Corp Solid state image pickup device and camera system

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007081943A (en) * 2005-09-15 2007-03-29 Fujifilm Holdings Corp Solid-state imaging module

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