JP2002080961A - Vacuum deposition system and vacuum deposition process - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a vacuum deposition system by which, at the time of vapor-depositing an organic electroluminescence material on a substrate, the vapor deposition can be performed with a uniform film thickness, high film depositing rate and high yield, and further, the vacuum deposition can be performed with high purity while highly maintaining the quality of the vacuum in a vacuum chamber with the heap of vapor depositing material into the vacuum chamber suppressed to a minimum. SOLUTION: In this vacuum deposition system in which vapor depositing sources 2 are heated in a vacuum chamber 1 under the reduced pressure of <=0.01 Pa and are vapor-deposited on the surface of a substrate 3. As at least one of the vapor depositing sources 2, an organic material is used, and the space with which the vapor depositing sources 2 and the substrate 3 are confronted is surrounded by a wall 4 heated to a temperature in which the organic material is not heaped.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a vacuum evaporation apparatus and a vacuum evaporation method used for evaporating a film of an organic electroluminescent material on a substrate.

[0002]

2. Description of the Related Art In a vacuum evaporation apparatus, an evaporation source and a substrate are arranged in a vacuum chamber so as to face each other, and while the inside of the vacuum chamber is depressurized, the evaporation source is heated to melt and evaporate the evaporation source. Or sublimate the evaporation source,
The vaporized material is deposited on the surface of the substrate to form a film. The heating method of the evaporation source is an electron beam method that accelerates and irradiates electrons to the evaporation source,
There is a resistance heating method in which a boat made of a metal having a high melting point such as tungsten or molybdenum is used as a resistor to supply a current to heat an evaporation source placed on the boat. Then, the vaporized molecules generated from the evaporation source by heating are emitted straight from the evaporation source in the normal direction, but since the emission space is kept in a vacuum, the mean free path of the vaporized molecules is several tens of meters. In addition, the vaporized molecules travel straight and adhere to and are deposited on a substrate disposed to face the evaporation source.

[0003]

As described above, since the vaporized molecules are emitted straight from the vapor deposition source 2 in the normal direction, as shown in FIG.
As shown by arrows in FIG. 4, the vaporized molecules go straight in the direction of scattering in all directions, but if the surface of the substrate 3 is flat, the distance from the evaporation source 2 is reduced to the center of the substrate 3. and because in the end differ as d _1, d _2, different deposition amount of deposition material at the center and the ends of the substrate 3, the film thickness to be deposited on the substrate 3 is that it is easy to become uneven There was a problem.

[0004] Further, since the vaporized molecules travel straight in the direction in which the vaporized molecules are scattered from the evaporation source 2, many vaporized molecules do not proceed toward the substrate 3. Since it does not contribute, it becomes an ineffective material. Therefore, there is a problem that the material utilization efficiency of the evaporation source 2 is low, that is, the yield is low, and a problem that the film forming speed on the surface of the substrate 3 is reduced.

[0005] The vaporized molecules that are not attached to the substrate 3 reach the inner wall of the vacuum chamber and are attached and deposited. However, when vacuum evaporation is performed by switching to a different material using the same vacuum chamber, When performing vacuum deposition by switching the vacuum evaporation, the material before being deposited on the inner wall of the vacuum chamber is heated again and vaporized, and this is mixed into the deposited film formed by the vacuum deposition and contaminated, and the purity of the film is formed. This also causes a problem of a decrease.

Further, when the material is deposited on the inner wall of the vacuum chamber as described above, when the vacuum chamber is opened to the atmosphere, moisture and gas in the air are absorbed by the deposited material, and the vacuum chamber is evacuated. It becomes difficult to maintain this absorbed moisture or gas as an inhibitory factor,
In addition, there is a possibility that the material deposited on the inner wall of the vacuum chamber may be peeled off as flake-like strips, which may cause a problem of contaminating the substrate 3 and a crucible such as a boat.

Here, since organic materials such as organic electroluminescent materials have a low heating temperature during vacuum deposition, vaporized molecules that do not adhere to the substrate 3 tend to adhere to the inner wall of the vacuum chamber and be deposited. Since the substance deposited on the inner wall of the chamber is easily vaporized, there is a possibility that the above-mentioned problem caused by the deposition of the vaporized molecules that do not adhere to the substrate 3 on the inner wall of the vacuum chamber may occur remarkably.

An organic thin film element is formed by sequentially depositing and depositing an organic thin film on a substrate to add an individual function. In particular, an organic electroluminescent element is formed by sequentially depositing an organic thin film on a transparent electrode on the substrate. In general, a laminated structure is formed by laminating thin films, and such a laminated structure is manufactured by sequentially vacuum-evaporating a plurality of organic materials. In this vacuum deposition, a method of doping a small amount of a luminescent material having fluorescence into an organic host material has been generally adopted since it was announced by Tang et al. Of Kodak. For example, it is well known that in forming a green element, co-evaporation is performed by simultaneously depositing quinacridone on an Alq3 layer as a host material to dope. Furthermore, in order to form a high-efficiency organic EL element, a hole-transporting organic substance and an electron-accepting compound as a dopant are co-deposited in order to increase the efficiency of hole injection from the anode. Li
It is also known to form an electron injection layer by co-evaporating an electron donating metal such as the above.

In such a film forming method of vacuum-depositing an organic material, it is common practice to perform vacuum deposition by installing two or more evaporation sources in one vacuum chamber. In such co-evaporation, the concentration of the doping material is a major factor in determining the properties of the film. That is, in the case of organic materials, the evaporation temperature is low, and in the case of performing binary evaporation, the evaporation temperatures of the two evaporation sources are often close to each other, and one of the organic materials adheres to the wall of the vacuum chamber or the like. In this case, when they are re-evaporated by heating, the doping concentration in the formed film is affected. Therefore, even in such a case, there is a possibility that the problem caused by the vaporized molecules that do not adhere to the substrate accumulate on the inner wall of the vacuum chamber as described above.

SUMMARY OF THE INVENTION The present invention has been made in view of the above points, and when depositing an organic material on a substrate, the deposition can be performed with a uniform film thickness, a high deposition rate, and a high yield. An object of the present invention is to provide a vacuum deposition apparatus capable of performing vacuum deposition with high purity while minimizing deposition of deposits in a vacuum chamber and maintaining high vacuum quality in a vacuum chamber. It is.

[0011]

According to a first aspect of the present invention, there is provided a vacuum deposition apparatus for heating a deposition source in a vacuum chamber under a reduced pressure of 0.01 Pa or less to deposit on a surface of a substrate. The apparatus is characterized in that at least one of the evaporation sources 2 uses an organic material, and a wall 4 heated to a temperature at which the organic material is not deposited surrounds a space where the evaporation source 2 and the substrate 3 face each other. Is what you do.

According to a second aspect of the present invention, in the first aspect, when the deposition source 2 and the substrate 3 are relatively moved,
The method is characterized in that the evaporation source 2 is heated to perform evaporation on the surface of the substrate 3.

According to a third aspect of the present invention, in the first or second aspect, the vapor deposition source 2 and the wall 4 surrounding the space where the vapor deposition source 2 and the substrate 3 are opposed to each other are moved. It is characterized in that the source 2 is heated to deposit on the surface of the substrate 3.

[0014] The invention of claim 4 is characterized in that, in any one of the above-mentioned claims 1 to 3, the organic material used as the evaporation source 2 is an organic electroluminescent material.

According to a fifth aspect of the present invention, in any one of the first to fourth aspects, a cylindrical body 5 is used as a wall 4 surrounding a space where the evaporation source 2 and the substrate 3 face each other, and a plurality of It is characterized in that the cylinders 5 are arranged, the deposition source 2 is arranged on each cylinder 5, and the substrate 3 is moved between the openings of the cylinders 5.

According to a sixth aspect of the present invention, in any one of the first to fifth aspects, the cylindrical body 5 is used as the wall 4 surrounding the space where the evaporation source 2 and the substrate 3 face each other. And a partition wall 6 for separating between the vapor deposition sources 2 is provided in the cylindrical body 5, and the cylindrical body 5 and the partition wall 6 respectively surround the space where the respective vapor deposition sources 2 and the substrate 3 face each other. Characterized by the following.

According to a seventh aspect of the present invention, in any one of the first to sixth aspects, the apparatus further includes a substrate feeder 7 for moving the substrate 3, and the substrate feeder 7 is formed so that the moving speed of the substrate 3 can be controlled. It is characterized by comprising.

The invention according to claim 8 is the invention according to any one of claims 1 to 7, further comprising a substrate feeder 7 for moving the substrate 3, wherein the substrate feeder 7 is moved so as to move the substrate 3 in a circular motion. 7 is formed.

According to a ninth aspect of the present invention, in any one of the first to seventh aspects, the long sheet material 8 is used as the substrate 3, and the long sheet material 8 is unwound from one of the pair of rolls 9 and the other. The roll 10 is wound around and moved.

According to a tenth aspect of the present invention, in any one of the first to ninth aspects, a preparatory chamber 11 connected to the vacuum chamber 1 and capable of reducing pressure is provided, and the vapor deposition source 2 is connected to the vacuum chamber 1 and the preparatory chamber 11. Characterized in that it can be moved freely between the two.

According to an eleventh aspect of the present invention, in any one of the second to tenth aspects, the width of the opening of the cylindrical body 5 on the side of the substrate 3 is set so that the width of the substrate 3 in the direction orthogonal to the moving direction of the substrate 3 is changed. It is characterized in that it is formed in a range from a size 20% wider than the width to a size 20% smaller than the width.

According to a twelfth aspect of the present invention, in any one of the first to eleventh aspects, the wall 4 is heated to a temperature at which the organic material is not deposited, and the wall 4 faces the evaporation source 2 and the substrate 3 out of the space. ９０90%.

According to a thirteenth aspect of the present invention, in any one of the first to twelfth aspects, the side of the wall 4 heated to a temperature at which no organic material is deposited surrounds the space where the evaporation source 2 and the substrate 3 face each other. The surface is formed of a material that does not easily react with the organic material.

According to a fourteenth aspect of the present invention, there is provided a method for vacuum-depositing an organic material, wherein a plurality of organic materials are deposited on the surface of the substrate 3 by using the vacuum forming apparatus according to any one of the first to thirteenth aspects. It is characterized by doing.

[0025]

Embodiments of the present invention will be described below.

FIG. 1 shows an embodiment of the present invention. A vacuum chamber 1 is formed by a bottom plate 16 and a vacuum vessel 17 provided on the upper surface of the bottom plate 16. An exhaust port 18 is provided in the bottom plate 16, and a vacuum pump 20 is connected to the exhaust port 18 via a gate valve 19 which is hermetically attached to the exhaust port 18. In the example of FIG.
As the wall 4 surrounding the space where the evaporation source 2 and the substrate 3 face each other, a cylindrical tube 5 having an opening at the top and bottom is used, and this tube 5 is installed on the bottom plate 16 in the vacuum chamber 1. is there. Needless to say, the wall 4 surrounding the space where the evaporation source 2 and the substrate 3 face each other can be formed as a cylindrical body 5 having any shape such as a rectangular cylindrical shape or a conical shape in addition to such a cylindrical shape.
The wall 4 can also be formed by combining partition plates. A sheath heater 21 is wound around the outer periphery of the cylinder 5, and a power supply 23 is connected to the sheath heater 21 via a current introduction terminal portion 22 provided on the bottom plate 16, and the sheath 5 is heated by causing the sheath heater 21 to generate heat. It can be heated.

A heating element 24 formed of a high-melting-point metal boat is disposed in the lower portion of the cylinder 5, and both ends of the heating element 24 are attached through the cylinder 5 and the vacuum vessel 17. It is attached in a state of being electrically connected to one end of each of the pair of current introduction terminals 25. This pair of current introduction terminals 25
A power supply 26 is connected to each of the other ends, and the heating element 24 is heated by resistance from the power supply 26. Further, a plurality of columns 27 are erected on the bottom plate 16 outside the cylindrical body 5, and a substrate support 28 is attached between upper ends of the columns 27. The substrate support 28 is horizontally disposed in the vacuum chamber 1 at a position immediately above the upper end opening of the cylindrical body 5, and the substrate support 28 is opened at a position at the center of the upper end opening of the cylindrical body 5. A window 29 is formed.

In the embodiment shown in FIG. 1, one heating element 24 is disposed in the lower portion of the cylindrical body 5 to heat one type of the vapor deposition source 2 to perform vapor deposition. A plurality of heating elements 24 may be arranged in the lower part of the body 5, each heating element 24 may be filled with a different evaporation source 2, and each evaporation source 2 may be individually heated to perform co-evaporation. Good.

In the present invention, when a plurality of vapor deposition sources 2 are used, at least one of them uses an organic material. As the organic material, for example, an organic electroluminescent material (hereinafter, referred to as organic E)
L material) and tris (8-hydroxyquinolinato) aluminum complex, quinacridone, rubrene, N, N'-bis (3-methylphenyl)-(1,1 '-Biphenyl)-
4,4'-diamine (TPD), 4,4'-bis [N-
(Naphthyl) -N-phenyl-amino] biphenyl (α
-NPD), bathophenanthroline, bathocuproine,
Oxadiazole and the like can be exemplified. When EL is deposited, a metal may be partially used in addition to the organic EL material. Therefore, some of the plurality of evaporation sources 2 may be made of a material other than an organic material such as a metal as the evaporation source 2 and may be simultaneously evaporated with the organic material. As a material other than the organic material, lithium, cesium, lithium fluoride, an alloy containing these, and the like can be used. In addition, as the substrate 3 on which a film such as an organic EL material is formed on the surface, any material such as glass, metal, and resin can be used, and is not particularly limited.

The vacuum evaporation apparatus according to the present invention is not limited to the above-mentioned organic EL material used as the evaporation source 2; for example, an organic material for forming a photoelectric conversion layer of a solar cell may be used as an evaporation source. It may be used as 2. Examples of the organic material forming the photoelectric conversion layer include a perylene derivative, a phthalocyanine derivative, and a quinacridone derivative.

Then, the evaporation source 2 is filled on the heating element 24 and set at the center of the lower part of the cylindrical body 5, and the substrate 3 is placed on the substrate support 28 with the lower surface exposed through the opening window 29. The substrate 3 and the vapor deposition source 2 are vertically arranged facing each other. Further, the vacuum pump 20 is operated to operate the vacuum chamber 1.
The inside is evacuated to a vacuum state, and the heating element 24 is further heated to heat the deposition source 2 and to heat the cylindrical body 5 by the sheath heater 21. When the pressure in the vacuum chamber 1 is reduced and the deposition source 2 is heated, the deposition source 2 melts and evaporates,
Alternatively, the vaporized molecules 31 which are sublimated and vaporized and generated from the vapor deposition source 2 are emitted straight from the vapor deposition source 2 in the normal direction, and travel straight in the directions scattered in all directions. Here, some of the vaporized molecules 31 go straight toward the substrate 3 and others go straight away from the substrate 3, but the space between the evaporation source 2 and the substrate 3 where the vaporized molecules 31 travel is a cylindrical body 5. Since the vaporized molecules 31 are enclosed in the cylindrical body 5, the vaporized molecules 31 proceeding in a direction away from the substrate 3 are not scattered, as shown in FIG. Most of the vaporized molecules 31 generated from the evaporation source 2 are reflected on the inner wall of the body 5 and travel toward the substrate 3, and can reach and adhere to the surface of the substrate 3. Therefore, as described above, most of the vaporized molecules 31 generated from the evaporation source 2 adhere to the surface of the substrate 3 and contribute to the film formation, so that the ineffective material is reduced and the material utilization efficiency of the evaporation source 2 is increased. As a result, deposition with a high yield becomes possible, and the film formation rate on the surface of the substrate 3 can be increased. In addition, the vaporized molecules 31 are
Since the light is reflected on the inner wall of the substrate 3 and adheres to various portions of the surface of the substrate 3 from various directions, the amount of deposition on each portion of the surface of the substrate 3 is uniform, and a film can be formed with a uniform film thickness.

Further, since the cylinder 5 is heated and forms a hot wall, even if the vaporized molecules 31 adhere to the surface of the cylinder 5, the adhered substance is reheated by the cylinder 5 and vaporized. ,
It is not deposited on the surface of the cylinder 5.
In this manner, the material of the evaporation source 2 can be prevented from being deposited on the surface of the cylindrical body 5, and the evaporation source 2
Since the vaporized molecules 31 generated from the gas are trapped in the cylindrical body 5, they can be reduced from adhering and depositing on the inner wall of the vacuum chamber 1. Therefore, when vacuum deposition is performed by switching to a different material using the same vacuum chamber 1, even if heating is performed when switching the material and performing vacuum deposition, the deposited material that is vaporized by heating may be in the cylindrical body 5 or the like. Since it does not exist on the surface of the vacuum chamber 1 (even if present), it does not contaminate the deposited film formed by vacuum deposition, and a highly pure film can be formed. . In addition, since there is no deposited material on the surface of the cylindrical body 5 or the vacuum chamber 1 (even if present) in which moisture or gas in the air is occluded, it becomes difficult to maintain the vacuum inside the vacuum chamber 1 in a vacuum. Can be prevented.

When an organic material such as an organic EL material is used as the evaporation source 2 as in the present invention, since the organic material has a low vaporization temperature, the vaporized molecules 31 that are not attached to the substrate 3 are removed from the cylindrical body 5.
However, by heating the cylinder 5 as described above, such deposition can be reliably prevented. Further, the thickness of the organic EL material formed on the substrate 3 is a thin layer of several hundred nm, and the purity of the film is very strictly required. Since it is possible, the present invention is particularly effective when depositing an organic EL material.

Here, when heating the cylinder 5 to a temperature at which the material of the evaporation source 2 is not deposited, the heating temperature of the cylinder 5 is determined by the vaporization temperature of the material of the evaporation source 2 under reduced pressure during vacuum deposition. (Evaporation temperature, sublimation temperature) or higher is preferable. The upper limit of the heating temperature of the cylindrical body 5 is not particularly set, but it is necessary that the temperature of the material of the evaporation source 2 does not decompose. It is appropriate to set the temperature to about + 100 ° C. The vaporization temperature of the organic EL material as the evaporation source 2 is 5
Since the temperature is about 0 to 300 ° C., the heating temperature of the cylindrical body 5 is 10 ° C.
Generally, it is set to about 0 to 400 ° C. In heating the cylinder 5, in the example of FIG. 1, the sheath heater 21 is used as a heating source fixed to the cylinder 5, but in this way, the heating source is fixed to the cylinder 5 and heating is performed. Alternatively, heating may be performed by lamp heating using radiant heat, such as a halogen heater.

The degree of pressure reduction in the vacuum chamber 1 is appropriately set in accordance with the material of the evaporation source 2, but the vaporized molecules 31 emitted from the evaporation source 2 do not collide with the gas molecules in the vacuum chamber 1 and the substrate 3 , That is, the mean free path must be tens of cm or more,
It is necessary to set the pressure to 0.01 Pa or less. The degree of pressure reduction is preferably as low as possible, and ideally it is 0 Pa. In the embodiment of FIG. 1, the width of the opening of the cylindrical body 5 on the side of the substrate 3 of the cylindrical body 5 ranges from 10% wider than the width of the substrate 3 to 10% narrower than this width. It is formed inside.

FIG. 2 shows another example of the embodiment of the present invention. In a vacuum chamber 1, a plurality of cylindrical bodies 5 formed in a square prism shape are arranged in a line. Each cylinder 5 is mounted on a base 33, and the sheath 5 can be wound around the outer periphery of each cylinder 5 to heat it. Further, a heating element 24 is provided at a lower portion of each cylinder 5, and the vapor deposition source 2 is set on the lower side of each cylinder 5 by filling the heating element 24. A substrate feeder 7 is arranged in the vacuum chamber 1 so as to extend between the cylinders 5 directly above. The substrate feeder 7 is formed by a pair of pulleys 34, 34 and a pair of right and left infinite cable carriers 35, 35 suspended between both ends of the pulleys 34, 34. The carrier 35 is caused to travel by being driven to rotate, and the substrate 3 placed over the right and left carriers 35 can be continuously moved just above the upper end openings of the respective cylinders 5. I can do it.

In this apparatus, the inside of the vacuum chamber 1 is decompressed to a vacuum state, the heating element 24 is heated to heat the vapor deposition source 2 below each cylinder 5, and the sheath heater 21 is used to heat each cylinder 5. Is heated, vaporized molecules 31 are generated from the evaporation source 2 in each cylinder 5. The vaporized molecules 31 generated in each cylinder 5 adhere to and deposit on the lower surface of the substrate 3 when the substrate 3 passes directly above the upper end opening of the cylinder 5, and are deposited on the substrate 3. The vaporized molecules 31 adhere and accumulate when passing over, and a vapor deposition film can be formed on the substrate 3. As described above, while continuously moving the substrate 3 just above the upper end opening of each cylindrical body 5 by the substrate feeding device 7,
By successively sending the substrates 3 by the substrate feeding device 7, it becomes possible to perform the vapor deposition in a continuous process, not in a batch process. Since the vaporized film can be formed by attaching the vaporized molecules 31 to the lower surface of the substrate 3 while moving, the vaporized molecules 31 can be uniformly attached to the lower surface of the substrate 3 to form a film with a uniform thickness. It becomes something. Further, since the substrate 3 is subjected to vapor deposition when passing over each of the cylinders 5, a different material is used as the vapor deposition source 2 provided for each of the cylinders 5 to form a film having a structure in which a plurality of different materials are stacked. It is possible to do. In order to cause the organic EL material deposited on the substrate 3 to emit light, the film deposited on the substrate 3 has a laminated structure. However, the vapor deposition can be performed with the laminated structure as described above. It is especially effective when doing.

The substrate feeder 7 is controlled so that the traveling speed of the carrier 35 can be changed arbitrarily.
The moving speed of the camera can be adjusted arbitrarily. Substrate 3
Since the thickness of the film deposited on the substrate 3 depends on the time during which the substrate 3 faces the opening at the upper end of the cylindrical body 5, it is necessary to adjust the feed speed of the substrate 3 to adjust the time when the substrate 3 passes over the cylindrical body 5. By
The thickness of the film formed on the substrate 3 can be controlled.

In the embodiment shown in FIG. 2, the width W ₁ of the opening at the upper end of the cylindrical body 5 in the direction orthogonal to the direction in which the substrate 3 is moved is perpendicular to the direction in which the substrate 3 is moved. It is formed within a range of 20% narrower dimension than the width of more than 20% wider dimensional width W ₂ in the direction. If the width W ₁ of the opening of the upper end of the tubular body 5 is wider than this, the number of the amount of the vaporized molecules 31 scattered escape from between the opening and the substrate 3 of the tubular body 5, the yield is deteriorated. Conversely, if the width W ₁ of the opening at the upper end of the cylinder 5 is smaller than this, the vaporized molecule 3 reaching the side end of the substrate 3
When the amount of 1 is reduced, the deposited film thickness at the side end of the substrate 3 becomes thin, and it becomes difficult to form a film with a uniform film thickness.

FIG. 3 shows an example of another embodiment of the present invention, in which a cylindrical body 5 having a cylindrical shape which is opened vertically is disposed in a vacuum chamber 1. A plurality of vertical partition walls 6 are arranged in the tubular body 5 so as to partition the inside of the tubular body 5 into a plurality of spaces 37 in a horizontal direction. Partition wall 6
Has a sheath heater 21 fixed thereto, so that the partition wall 6 can be heated at the same temperature as the cylindrical body 5. A heating element 24 is provided in a lower portion of each space 37 partitioned by the partition wall 6, and the heating element 24 is filled with the evaporation source 2 so that the evaporation source 2 is set in a lower portion of each space 37. is there. Therefore, a plurality of evaporation sources 2 can be set in the lower part of the cylinder 5, and the space 37 in which the evaporation sources 2 and the substrate 3 face each other is surrounded by the cylinder 5 and the partition wall 6. I have. Further, a sheath heater 21 is wound around the outer periphery of the cylindrical body 5 so that the cylindrical body 5 can be heated. Further, a halogen lamp 38 is disposed in the vacuum chamber 1 and the halogen lamp 38 is used as a heat source to heat the cylindrical body 5. They can do it.

Then, in the vacuum chamber 1, the cylinder 5
The substrate feeder 7 is disposed immediately above the upper end opening of the substrate feeder. This substrate feeder 7 is formed by including a horizontally disposed disc 39 and a motor 40 attached to the outside of the vacuum chamber 1. The center of the disc 39 is fixed to an output shaft 41 of the motor 40. By doing so, the disk 39 can be driven to rotate in a horizontal plane. A plurality of opening windows 29 are formed on the circular plate 39 along the circumference thereof, and the substrate 3 is placed on the opening windows 29. FIG. 4 shows a mechanism for holding the disk 39, wherein a ring-shaped guide rail 43 is fixed by a plurality of guide rail support arms 42 provided on the inner wall of the vacuum chamber 1, and provided on the lower surface of the disk 39. The disc 39 is rotatably supported by running the roller 44 along the upper surface of the guide rail 43.

In this apparatus, the inside of the vacuum chamber 1 is decompressed to a vacuum state, and the heating element 24 is heated to heat the respective vapor deposition sources 2 in the cylinder 5 and to heat the cylinder 5 and the partition wall 6. Then, vaporized molecules 31 are generated from the evaporation source 2 in each space 37 in the cylindrical body 5. On the other hand, the substrate 3 moves in a circular motion on the upper surface opening of the cylindrical body 5 according to the rotation of the disk 39 of the substrate feeder 7, and this movement causes the substrate 3 to move in each space 37.
The vaporized molecules 31 generated in each space 37 when passing directly above the upper end opening of the substrate 3 adhere to and deposit on the lower surface of the substrate 3, so that a vapor deposition film can be formed on the substrate 3. Thus, while moving the substrate 3 across the opening on the upper surface of each space 37, the vaporized molecules 31 can be attached to the lower surface of the substrate 1 to form a deposited film. The vaporized molecules 31 can be attached to form a film with a uniform thickness. Further, since the substrate 3 is subjected to vapor deposition when passing over each space 37, a different material is used as the vapor deposition source 2 provided in each space 37 to form a film having a structure in which a plurality of different materials are stacked. Is possible. In the embodiment shown in FIG. 3, unlike the embodiment shown in FIG. 2, there is no need to use a plurality of cylinders 5, and a plurality of such different kinds of materials are formed in a laminated structure. Therefore, the configuration of the device can be simplified.

FIG. 5 shows another embodiment of the substrate feeder 7 in which the substrate 3 is moved in a circular motion. A ring-shaped guide rail 43 similar to the above is provided in the vacuum chamber 1 and a motor is provided. A driving disk 45 rotated by 40 is disposed above the guide rail 43, and both ends of the outer periphery of the plurality of disks 39 are connected to the guide rail 43 and the driving disk 45.
It is placed in. In this device, the driving disk 45 is driven to rotate, so that the disk 39 on which the substrate 3 is mounted is revolved along the guide rail 43 while rotating, and the substrate 3 is moved in a circular motion. Is what you can do.

In the embodiment shown in FIG. 6, when a plurality of evaporation sources 2 are provided in the cylindrical body 5, the partition wall 6 is provided as shown in FIG.
, So that the inside of the cylindrical body 5 is not partitioned. Therefore, in this case, it is possible to perform evaporation on the substrate 3 in a state where a plurality of materials are mixed from a plurality of evaporation sources 2 in a lower part of the cylindrical body 5.

FIG. 7 shows another example of the embodiment of the present invention, in which a flexible long sheet material 8 such as a resin film is used as the substrate 3. As the resin film forming the long sheet material 8, any material such as PET or polyethylene can be used. In the vacuum chamber 1, a wall 4 formed by a plurality of partition plates or the like is arranged, and a plurality of spaces 37 opening vertically are formed between the walls 4. The sheath heater 21 is fixed to the wall 4 so as to be heated. A heating element 24 is provided below each space 37 surrounded by the wall 4, and the heating element 24 is filled with the evaporation source 2 so that the evaporation source 2 is set below each space 37. .

The interior of the vacuum chamber 1 is divided into a lower room provided with the wall 4 and an upper room, and is vertically divided by a ceiling 46, and an opening window 47 is formed in the ceiling 46 above the space 37. is there. A pair of rolls 9 and 10 are arranged in a room above the partition ceiling 46, and a long sheet material 8 is wound around one of the rolls 9, and the long sheet material 8 fed from the roll 9 is used as the other. Roll 1
It can be wound up to zero. A back roll 48 is provided between the rolls 9 and 10 in the opening window 47. After the long sheet material 8 fed from one roll 9 is sent along the outer periphery of the back roll 48, The long sheet material 8 is made to face the vapor deposition source 2 from the opening window 47 through the space 37 when being wound along the outer circumference of the back roll 48.

In this apparatus, the vacuum pump 20 is operated to reduce the pressure in the vacuum chamber 1 to a vacuum state, and the heating element 24 is heated to heat each of the vapor deposition sources 2 and the wall 4. Vaporized molecules 31 are generated from the evaporation source 2 in each space 37 surrounded by. On the other hand, the long sheet material 8 is continuously moved from the roll 9 to the roll 10 by rotating the rolls 9 and 10, and the long sheet material 8 is moved along the outer periphery of the back roll 48 into the opening window 47. When exposed from the space, the vaporized molecules 31 generated in each space 37 adhere to and accumulate on the lower surface of the long sheet material 8, so that a vapor deposition film can be formed on the long sheet material 8. As described above, while continuously feeding and moving the long sheet material 8, the vaporized molecules 31 can be attached to the surface of the long sheet material 8 to form a deposition film. This makes it possible to attach the vaporized molecules 31 uniformly over the entire length and form a film with a uniform thickness. The rotation speed of the rolls 9 and 10 is controlled so as to be adjustable. The rolls 9 and 10 control the rotation speed to change the winding speed.
The moving speed of the long sheet material 8 can be changed, the thickness of the film deposited on the long sheet material 8 can be controlled, and the film can be formed at a high speed. Things.

In each of the above embodiments, the substrate 3 is moved by moving the substrate 3 with respect to the vapor deposition source 2. However, if the substrate 3 and the vapor deposition source 2 move relatively, This is a good thing, and the substrate 3 may be fixed and the evaporation source 2 may be moved, or both the substrate 3 and the evaporation source 2 may be moved.

When the evaporation source 2 is fixed and the wall 4 is fixed, the position of the evaporation source 2 relative to the wall 4 is constant. There is a possibility that the effect of preventing the deposition by heating the wall 4 may become insufficient because the material 2 is easily attached. At this time, at least one of the evaporation source 2 and the wall 4 can be moved. In this way, if the vapor deposition is performed while the two are relatively moved, it is possible to prevent the material of the specific evaporation source 2 from adhering to a specific portion of the wall 4 beforehand. By heating No. 4, a high effect of preventing the deposition can be obtained.

FIG. 8 shows another example of the embodiment of the present invention, in which auxiliary chambers 11 are provided on both lower sides of the vacuum chamber 1. Each of the preparatory chambers 11 is connected to the vacuum chamber 1 through a gate valve 49. The preparatory chamber 11 is connected to the lower portion of the vacuum chamber 1 by opening the gate valve 49, and the preparatory chamber is closed by closing the gate valve 49. The communication between the vacuum chamber 11 and the vacuum chamber 1 can be shut off in an airtight manner. Vacuum chamber 1 as described above
A vacuum pump 20 is connected to each of the preparatory chambers 11, and another vacuum pump 20 is connected to each of the preparatory chambers 11.
It can be opened and closed by 0. In the upper part of the vacuum chamber 1, a wall 4 formed by a plurality of partition plates or the like is provided.
Are arranged, and a plurality of upper and lower open spaces 37 are formed between the walls 4. A sheath heater 21 is fixed to the wall 4 so that the wall 4 can be heated. Further, a substrate support 28 is disposed above the wall 4, and an opening window 29 is provided in the substrate support 28 corresponding to each space 37, and the substrate is placed on the substrate support 28 at each opening window 29. 3 is placed and set.

A linear guide rail 52 is provided in each spare chamber 11, and a slide tool 53 is slidably mounted on the guide rail 52.
An arm 54 bent so as to protrude toward the vacuum chamber 1 is provided on the slide tool 53, and a moving stage 55 is attached to the tip of the arm 54. The moving stage 55 is formed in a flat U-shape whose center portion is open to the vacuum chamber 1 side. A drive guide rail 56 is provided below each spare chamber 11 in parallel with the guide rail 52, and a drive slide 57 is attached to the drive guide rail 56 so as to be slidably moved. The slide member 53 and the drive slide member 57 are both formed of, for example, magnets. When the drive slide member 57 is driven and slid along the drive guide rail 56, the slide member 53 is sucked by the drive slide member 57. Also slides along the guide rail 52.

Further, a fixed stage 59 is provided in the bottom of the vacuum chamber 1. The fixed stage 59 is shown in FIG.
As shown in FIG. 1, the center of the fixed stage 59 is formed in a rectangular shape having a vertical opening at the center, and a lift plate 60 is disposed at the central opening of the fixed stage 59. The lift plate 60 is a cylinder device 6
1 allows it to be raised and lowered so as to be lifted above the fixed stage 59.

FIG. 10 shows an evaporation source holding cassette 63 in which a plurality of pairs of L-shaped terminal plates 6 are provided on the upper surface of a base 64.
5, a heating element 24 formed of a high melting point metal boat is mounted between upper end portions of a pair of terminal plates 65. Each terminal plate 65 has an end power supply connection portion 66 protruding from the edge of the base 64. This deposition source holding cassette 63
Is mounted on the moving stage 55 for use.

When performing vacuum deposition with the vacuum deposition apparatus formed as described above, first, the cover 50 of one preliminary chamber 11 is opened to open the upper surface, and the deposition source holding cassette located in the preliminary chamber 11 is opened. The evaporation source 2 is filled and set on the 63 heating elements 24. Thereafter, as shown in FIG. 9A, the lid 50 is closed and the vacuum pump 20 is operated to reduce the pressure in the preliminary chamber 11 to a vacuum state.
On the other hand, the inside of the vacuum chamber 1 is also depressurized to a vacuum state,
Wall 4 is heated. Then, the gate valve 49 is opened to allow one of the pair of preliminary chambers 11 to communicate with the inside of the vacuum chamber 1. Next, when the drive slide 57 is slid to the vacuum chamber 1 along the drive guide rail 56, the slide 53 sucked by the drive slide 57 also moves along the guide rail 52 to the side of the vacuum chamber 1. Slide to
As shown in FIG. 9B, the moving stage 55 is introduced into the vacuum chamber 1 through the gate valve 49 opened from the preliminary chamber 11. The evaporation source holding cassette 63 mounted on the moving stage 55 also moves
The moving stage 55 and the vapor deposition source holding cassette 63 are located immediately above the fixed stage 59. Next, the lift plate 60 is raised, and the lift plate 60 is inserted through the opening in the center of the moving stage 55, so that the vapor deposition source holding cassette 63 is moved from above the moving stage 55 as shown in FIG.
Is lifted. Thus, the evaporation source holding cassette 63
Is lifted, the driving slide 57 slides in the direction away from the vacuum chamber 1, and the slide 53 sucked by the drive slide 57 also slides in the direction away from the vacuum chamber 1, as shown in FIG. )
As described above, the moving stage 55 is returned from the vacuum chamber 1 into the preliminary chamber 11. Thereafter, the lift plate 60 is lowered, and the deposition source holding cassette 63 is placed on the fixed stage 59 as shown in FIG. When the deposition source holding cassette 63 is placed and set on the fixed stage 59 in this manner, the power supply electrode 67 provided in the vacuum chamber 1 is lowered, and the deposition source holding cassette 6
3 is in contact with the power supply connection portion 66 of each terminal plate 65, and the terminal plate 6
Power is supplied to the heating element 24 through the heating element 5 to cause the heating element to generate heat.

Thereafter, the gate valve 49 is closed, and the heating element 2 of the evaporation source holding cassette 63 is attached to the substrate 3 in the same manner as described above.
The material of the evaporation source 2 filled in 4 can be deposited on the substrate 3 to form a film. Then, when the evaporation source 2 is consumed, the evaporation source holding cassette 63 is processed in the reverse order.
Is returned to the preliminary chamber 11. That is, the lift plate 6
0 rises, the deposition source holding cassette 63 is lifted,
The moving stage 55 is introduced into the vacuum chamber 1 by opening the gate valve 19, and then the lift plate 60 is lowered to place the deposition source holding cassette 63 on the moving stage 55, and the deposition source holding cassette 63 is moved to the moving stage 55. 55 together with the gate valve 4
9 is closed. At this time, the other preliminary chamber 11
In the above, the evaporation source 2 is filled and set on the heating element 24 of the evaporation source holding cassette 63, and the evaporation source holding cassette 63 is set in the vacuum chamber 1 from the other preliminary chamber 11 in the same manner as described above. It has become so. In this way, it is possible to quickly replace and replenish the evaporation source 2 in the vacuum chamber 1 without having to open the vacuum chamber 1 and expose it to the atmosphere. Can be formed into a thick film.

In the embodiment shown in FIG. 8, a pair of preparatory chambers 11 are connected to both sides of the vacuum chamber 1, but only one preparatory chamber 11 is used to connect the preparatory chamber 11 with the preparatory chamber 11. The replacement of the vapor deposition source 2 may be performed by using the above method. Further, it is also possible to use three or more preliminary chambers 11 and connect the respective preliminary chambers 11 radially around the vacuum chamber 1. In the embodiment shown in FIG.
Are formed in a pentagonal shape in plan view, and five preliminary chambers 11 are connected around the vacuum chamber 1. In this case, the evaporation source 2 in the vacuum chamber 1 can be replaced and replenished in order from each preliminary chamber 11.

When the space in which the evaporation source 2 and the substrate 3 face each other is surrounded by the wall 4, the space does not need to be completely surrounded by the wall 4, and 60% to 90% of the space is covered by the wall 4. You only have to be surrounded. By enclosing the range of 60 to 90% of the space where the evaporation source 2 and the substrate 3 face each other with the wall 4, it is possible to perform evaporation with a uniform film thickness with good yield.

The wall 4 to be heated to a temperature at which the organic material is not deposited should be formed of a material whose surface surrounding the space where the vapor deposition source 2 and the substrate 3 face each other does not easily react with the organic material. preferable. Examples of such a material that does not easily react with the organic material include ceramics such as alumina and silicon carbide, diamond, and stainless steel. By forming the wall 4 in this way, even when the organic material adheres to the wall 4, the organic material can be prevented from being deteriorated by the wall 4, and the organic material once adhered to the wall 4 can be prevented. Even when the material evaporates again and is deposited on the substrate 3 to form a film, the purity of the film can be prevented from lowering.

[0059]

EXAMPLE Next, the effect of the present invention will be demonstrated with a specific example for the apparatus of the embodiment shown in FIG.

In the apparatus shown in FIG. 2, each cylinder 5 is made of SUS316 and has a size of 50 mm × 50 mm.
X 250 mm high, each heating element 24
Used was a tungsten filament and a crucible. Further, as the evaporation source 2 filled in each heating element 24, CuPc (copp
erphthalocyanine), α-NPD (α-naphthylpheny)
lbiphenyldiamine), Alq3 (tris- (8-hydroxyquino
line)), and the substrate 3 is 50 mm × 50
A glass plate of mm × 0.7 mm thickness was used.

Then, a current of 5 A is applied to each heating element 24 to heat and evaporate each vapor deposition source 2, each cylindrical body 5 is heated to 250 ° C., and the substrate 3 is moved by the substrate feeding device 7.
Vacuum evaporation was performed on the substrate 3 by moving the cylinder 5 at a speed of mm / sec.

The thickness of the deposited film of the substrate 3 thus deposited was measured with a stylus-type film thickness meter, and the deposition rate (tact time) was evaluated from the thickness. further,
The change in the mass of the substrate 3 before and after the vapor deposition and the heating element 24 before and after the vapor deposition
The mass change of the crucible was measured, and from these, the material use efficiency, which is the use efficiency of the evaporation source 2, was evaluated.

(Change in substrate mass before and after vapor deposition / Change in crucible mass before and after vapor deposition) × 100 = material use efficiency As a result, total film thickness of vapor deposited film = 1300 °, average vapor deposition rate = 17.3 °
/ Sec, material utilization efficiency = 35.0%. For comparison, when vapor deposition was performed in the same manner without using the cylinder 5, the total film thickness of the vapor deposited film was 140 ° and the average vapor deposition rate was 1.9.
Å / sec, material utilization efficiency = 4.2%, demonstrating the effect of the present invention by using the cylindrical body 5 as a heated wall.

[0064]

As described above, the vacuum deposition apparatus according to claim 1 of the present invention is a vacuum deposition apparatus that heats a deposition source in a vacuum chamber under a reduced pressure of 0.01 Pa or less to deposit on a substrate surface. At least one of the evaporation sources uses an organic material, and a wall heated to a temperature at which the organic material is not deposited is used to surround the space where the evaporation source and the substrate are opposed, so that vaporized molecules generated from the evaporation source are removed. It can be confined by enclosing it with walls, and many vaporized molecules generated from the evaporation source can reach the surface of the substrate and adhere to it. It can be done. Also, even if the vaporized molecules adhere to the wall surface, they are reheated and vaporized, and are not deposited on the wall surface.When performing vacuum deposition by switching to a different material using the same vacuum chamber, In addition, it is possible to form a film with high purity and to prevent the difficulty in maintaining the vacuum in the vacuum chamber.

According to a second aspect of the present invention, in the first aspect, the vapor deposition source is heated to perform vapor deposition on the substrate surface in a state where the vapor deposition source and the substrate are relatively moved. By using a plurality of kinds of materials, different materials can be deposited on the surface of the substrate, and a film can be formed with a structure in which a plurality of different kinds of materials are stacked.

According to a third aspect of the present invention, in the first or second aspect, the evaporation source is heated while the evaporation source and a wall surrounding a space where the evaporation source and the substrate are opposed to each other are relatively moved. Since the evaporation is performed on the substrate surface, it is possible to prevent the material of the evaporation source from adhering to a specific portion of the wall beforehand, and to obtain a high effect of preventing the deposition by heating the wall. Can be done.

According to a fourth aspect of the present invention, in any one of the first to third aspects, since the organic material used as the vapor deposition source is an organic electroluminescent material, it is possible to manufacture a highly accurate organic electroluminescent element. It will be easier.

According to a fifth aspect of the present invention, in any one of the first to fourth aspects, a cylindrical body is used as a wall surrounding a space where the evaporation source and the substrate face each other, and a plurality of cylindrical bodies are arranged in a vacuum chamber. Since the evaporation source was arranged in each cylinder and the substrate was moved between the openings of each cylinder,
By using different materials as the evaporation source provided for each cylinder, different materials can be sequentially evaporated on the surface of the substrate, and a film can be formed in a structure in which a plurality of different materials are stacked. .

According to a sixth aspect of the present invention, in any one of the first to fifth aspects, a cylindrical body is used as a wall surrounding a space where the evaporation source and the substrate face each other, and a plurality of evaporation sources are arranged in one cylindrical body. In addition, a partition wall that separates between the evaporation sources is provided in the cylinder, and the cylinder and the partition wall surround the spaces where the respective evaporation sources and the substrate face each other. In a state separated by a partition wall,
A film can be formed on a substrate without mixing materials of an evaporation source.

According to a seventh aspect of the present invention, in any one of the first to sixth aspects, the apparatus further comprises a substrate feeding device for moving the substrate, and the substrate feeding device is formed so as to control the moving speed of the substrate. By adjusting the moving speed of the substrate, the time for receiving the effect of vapor deposition can be adjusted, and the thickness of the vapor deposited film formed on the surface of the substrate can be arbitrarily controlled.

According to an eighth aspect of the present invention, in any one of the first to seventh aspects, the apparatus further comprises a substrate feeding device for moving the substrate, and the substrate feeding device is formed so as to move the substrate in a circular motion direction. Therefore, by moving the substrate, vapor deposition can be performed on the surface of the substrate while changing the position with respect to the vapor deposition source, and the film thickness of the film formed on the surface of the substrate can be made uniform.

According to a ninth aspect of the present invention, in any one of the first to seventh aspects, a long sheet material is used as a substrate, and the long sheet material is unwound from one of a pair of rolls and wound around the other roll. Therefore, the long sheet material can be formed by vapor deposition over the entire length.

According to a tenth aspect of the present invention, in any one of the first to ninth aspects, a preparatory chamber connected to the vacuum chamber and capable of reducing pressure is provided, and the vapor deposition source is movable between the vacuum chamber and the preparatory chamber. Therefore, it is possible to replace and replace the deposition source in the vacuum chamber from the preliminary chamber without opening the vacuum chamber and exposing it to the atmosphere.

According to the eleventh aspect of the present invention, in any one of the second to tenth aspects, the width of the opening of the cylindrical body on the side of the substrate is set to be larger than the width of the substrate in the direction orthogonal to the direction of movement of the substrate.
Since the film is formed in a range from 0% wide dimension to 20% narrower than this width, it is possible to form a film by vapor deposition with a uniform film thickness with good yield.

According to a twelfth aspect of the present invention, in any one of the first to eleventh aspects, the wall heated to a temperature at which the organic material is not deposited is 60 to 90% of the space where the evaporation source and the substrate face each other. Is formed, it is possible to form a film by vapor deposition with a uniform film thickness with good yield.

According to a thirteenth aspect of the present invention, in any one of the first to twelfth aspects, the surface of the wall heated to a temperature at which the organic material is not deposited, on the side surrounding the space where the evaporation source and the substrate face each other, Since the organic material is formed of a material that does not easily react, even if the organic material adheres to the wall, the organic material is hardly deteriorated, and the organic material once adhered to the wall evaporates again and adheres to the substrate. However, it is possible to prevent the purity of the film from being reduced.

According to a fourteenth aspect of the present invention, there is provided a method for vacuum vapor deposition of an organic material, wherein a plurality of organic materials are vapor-deposited on a substrate surface using the vacuum forming apparatus according to any one of the first to thirteenth aspects. As a result, an organic material can be deposited with a uniform film thickness at a high deposition rate and a high yield, and a highly pure film can be formed from the organic material.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view illustrating an example of an embodiment of the present invention.

FIG. 2 is a perspective view showing another example of the embodiment of the present invention.

FIG. 3 is a perspective view showing another example of the embodiment of the present invention.

FIG. 4 shows a part of the above embodiment,
(A) is a sectional view, and (b) is a perspective view.

FIG. 5 is a partial perspective view showing another example of the embodiment of the present invention.

FIG. 6 is a perspective view showing another example of the embodiment of the present invention.

FIG. 7 is a sectional view showing another example of the embodiment of the present invention.

FIG. 8 is a cross-sectional view showing another example of the embodiment of the present invention.

FIG. 9 shows a part of the above embodiment,
(A) to (e) are cross-sectional views.

FIG. 10 is a perspective view showing a part of the embodiment.

FIG. 11 is a perspective view showing a part of the above embodiment.

FIG. 12 is a sectional view showing a part of the above embodiment.

13 shows another example of the embodiment of the present invention, wherein (a) is a schematic perspective view and (b) is a schematic plan view. FIG.

FIG. 14 is a schematic diagram showing a relationship between a deposition source and a substrate.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Vacuum chamber 2 Evaporation source 3 Substrate 4 Wall 5 Cylindrical body 6 Partition wall 7 Substrate feeder 8 Long sheet material 9 Roll 10 Roll 11 Reserve chamber

 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Junji Kido 9-4-3, Mamikita, Koryo-cho, Kitakatsuragi-gun, Nara Pref. (72) Inventor Yukihiro Kondo 1048 Odoma, Oaza, Kadoma, Osaka Prefecture Matsushita Electric Works, Ltd. 72) Inventor Yasuhisa Kishigami 1048 Kazuma Kadoma, Kadoma-shi, Osaka F-term in Matsushita Electric Works Co., Ltd.

Claims (14)

[Claims] In a vacuum deposition apparatus for heating a deposition source in a vacuum chamber under a reduced pressure of 0.01 Pa or less to deposit on a substrate surface, at least one of the deposition sources uses an organic material, and the organic material is A vacuum deposition apparatus comprising a wall heated to a temperature at which deposition is not performed and surrounding a space where a deposition source and a substrate face each other. 2. The vacuum evaporation apparatus according to claim 1, wherein the evaporation source is heated to perform evaporation on the surface of the substrate while the evaporation source and the substrate are relatively moved. 3. The method according to claim 1, wherein the vapor deposition source and a wall surrounding a space where the vapor deposition source and the substrate face each other are relatively moved, and the vapor deposition source is heated to perform vapor deposition on the substrate surface. The vacuum deposition apparatus according to claim 1 or 2, wherein 4. The vacuum vapor deposition device according to claim 1, wherein the organic material used as the vapor deposition source is an organic electroluminescent material. 5. A cylindrical body is used as a wall surrounding a space where an evaporation source and a substrate face each other, a plurality of cylindrical bodies are arranged in a vacuum chamber, an evaporation source is arranged in each cylindrical body, and the substrate is connected to each cylindrical body. 5. The vacuum evaporation apparatus according to claim 1, wherein the vacuum evaporation apparatus is moved between the openings. 6. A cylindrical body is used as a wall surrounding a space where an evaporation source and a substrate face each other, a plurality of evaporation sources are arranged in one cylindrical body, and a partition wall for separating between the evaporation sources is provided in the cylindrical body.
The vacuum evaporation apparatus according to any one of claims 1 to 5, wherein a space in which the evaporation source and the substrate face each other is surrounded by the cylinder and the partition wall. 7. The vacuum deposition according to claim 1, further comprising a substrate feeding device for moving the substrate, wherein the substrate feeding device is formed so as to control the moving speed of the substrate. apparatus. 8. The apparatus according to claim 1, further comprising a substrate feeding device for moving the substrate, wherein the substrate feeding device is formed so as to move the substrate in a direction in which the substrate moves in a circular motion.
The vacuum evaporation apparatus according to any one of the above. 9. A long sheet material is used as a substrate, and the long sheet material is unwound from one of a pair of rolls and wound around the other roll to be moved. The vacuum evaporation apparatus according to any one of the above. 10. The vacuum chamber according to claim 1, further comprising a preliminary chamber connected to the vacuum chamber and capable of reducing the pressure, wherein the deposition source is movable between the vacuum chamber and the preliminary chamber. The vacuum evaporation apparatus according to the above. 11. The width of the opening of the cylindrical body on the side of the substrate is formed within a range from 20% wider than the width of the substrate in a direction orthogonal to the direction of movement of the substrate to 20% narrower than the width. The vacuum evaporation apparatus according to claim 2, wherein the vacuum evaporation apparatus is formed. 12. A wall heated to a temperature at which an organic material is not deposited, and 60 to 60 of a space where a deposition source and a substrate face each other.
12. The method according to claim 1, wherein the area is 90%.
The vacuum evaporation apparatus according to any one of the above. 13. The surface of a wall heated to a temperature at which an organic material is not deposited, on a side surrounding a space where a deposition source and a substrate face each other, is formed of a material that does not easily react with the organic material. The vacuum evaporation apparatus according to claim 1. 14. A vacuum deposition method for an organic material, wherein a plurality of organic materials are deposited on the surface of a substrate by using the vacuum forming apparatus according to claim 1. Description: