JP2001319883A - Method for producing deposited film - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method for producing a deposited film of amorphous silicon based material exhibiting good electrical characteristics in which deposition rate is enhanced, cracking of the film is reduced while reducing generation of powder and the production yield is improved. SOLUTION: Discharge electrodes are disposed oppositely in a vacuum tight deposition chamber provided with an exhausting means and a material gas supply means, high frequency power is applied to one discharge electrode and a substrate is placed on the other electrode. Glow discharge is then generated between the discharge electrodes by introducing material gas into the deposition chamber and a non-single crystal material principally comprising silicon atoms is formed on the substrate. In such a production method employing a plasma CVD method, high frequency power is converted into pulses of two levels at the time of forming the non-single crystal material and the high level of high frequency power is varied.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming a deposited film by a plasma CVD method, and more particularly to a method for forming a functional semiconductor film made of a non-single-crystal material containing silicon atoms as a base material for forming a light receiving member. The present invention relates to a method for manufacturing a deposited film that can be formed on a substrate.

[0002]

2. Description of the Related Art There are various plasma processing methods used for semiconductors and the like according to their respective applications. For example, in forming a deposited film, there is an amorphous silicon-based semiconductor film using a plasma CVD method using high-frequency power, and a method that makes use of its characteristics is used. In recent years, a high-quality film has been formed at a high speed and a high yield. There is an increasing demand for such a device, and various studies are being conducted.

[0003] In order to obtain a deposited film at high speed, it is possible to respond by increasing the high-frequency power and the gas flow rate. However, in such a method, the gas-phase polymerization reaction increases at the same time and a large amount of polysilane powder is obtained. Occurs, resulting in a decrease in film quality and yield.

On the other hand, as a method for solving such a problem, intermittent discharge (periodic ON / OFF frequency 40 Hz, 1 kHz,
It has been proposed that by forming an amorphous silicon film using a duty ratio of around 50%), the deposition rate can be improved as compared with conventional continuous discharge, and a high-quality film with reduced powder generation can be produced [ Y. Watanabe eta
l., Appl. Phys. Lett., 53 (1988) 1263., Appl. Phys. L
ett., 57 (1990) 1616.], and various ideas have been devised.

For example, Japanese Patent Application Laid-Open No. Hei 6-291061 discloses that a silane-based gas and a hydrogen gas are supplied in a pulsed manner with their phases shifted, and the pulse discharge power is relatively small when the silane-based gas is supplied. There has been disclosed a technique capable of producing a high-quality amorphous silicon film with few defects at a high speed by increasing the size relatively.

Japanese Unexamined Patent Application Publication No. 7-74110 discloses that high frequency power is pulse-modulated in two stages of high and low so that the lower value of the high frequency power is set so that the deposition rate of the amorphous silicon film is 300 ° / min or less. In addition, there is disclosed a technique capable of producing a film having high light-dark conductivity at high speed with little generation of powder.

Further, Japanese Patent Application Laid-Open No. 7-335560 discloses that the amount of dust generated during high-speed deposition of an amorphous silicon film is reduced by setting the ON state to 3 seconds or less and the OFF state to 15 ms or more in intermittent discharge. There is disclosed a technique which is about two orders of magnitude lower than the conventional intermittent discharge method, improves the throughput of the plasma CVD process, and has a great effect on improving the yield.

Japanese Patent Application Laid-Open No. 8-288228 discloses a high quality semiconductor thin film even when a hydrogenated amorphous silicon thin film is deposited at high speed by intermittent discharge at a deposition rate of 600 ° / min or more and 50 μs or less. There is disclosed a technology capable of providing a high-performance semiconductor device at a low cost and obtained at a high yield.

[0009] These techniques have improved the electrical, optical and operating environment characteristics of the amorphous silicon film.

Therefore, when a deposited film of an amorphous silicon-based material is produced by intermittent discharge, the deposition rate is certainly higher than that of a deposited film of an amorphous silicon-based material produced by a conventional continuous discharge, and the generation of powder is reduced. It has been found that a reduced deposited film can be obtained.

[0011]

However, it has been newly found that the following phenomenon may occur in the deposited film of the amorphous silicon-based material produced by the intermittent discharge shown in the above conventional method.

That is, it has been found that when an amorphous silicon-based material is produced by intermittent discharge, cracks may occur in the deposited film. If cracks occur in the produced deposited film, for example, the deposited film of the electrophotographic photosensitive member, the film cannot be used as the electrophotographic photosensitive member, and the yield is greatly reduced, resulting in an increase in cost.

Further, when a deposited film of an amorphous silicon-based material is produced by intermittent discharge under the same conditions as a conventional continuous discharge, there is much room for improvement in electrical characteristics as compared with a conventional continuous discharge. Admitted that there is.

For example, when an electrophotographic photoreceptor is manufactured under the same conditions as those of a conventional continuous discharge, fluctuations in charging ability (temperature characteristics) due to changes in charging ability, sensitivity, and ambient temperature, as well as light such as blank memory and ghost light. In some cases, the electrophotographic characteristics of the memory have more room for improvement than those manufactured by conventional continuous discharge, and there is a problem that higher quality must be realized.

In particular, in recent years, the performance of copying machines has been improved, and with the spread of digital machines and color machines, high quality, high speed, and high durability of electrophotographic apparatuses have been rapidly advanced. The photoreceptor is required to further improve its electrical characteristics and photoconductive characteristics, and to significantly extend the performance in all environments while maintaining charging ability and sensitivity.

Accordingly, it is an object of the invention relating to the present application to reduce the occurrence of cracks in a deposited film while producing a deposited film of an amorphous silicon-based material while improving the deposition rate and reducing the generation of powder. It is an object of the present invention to provide a method for improving the yield and dramatically improving the electrical characteristics and enabling the production of a deposited film composed of a non-single-crystal material containing silicon atoms as a base material.

For example, in an electrophotographic photoreceptor, a silicon atom is used as a base material, in which an improvement in charging ability and sensitivity and a reduction in temperature characteristics and optical memory are achieved at a high level, and image quality is dramatically improved. It is an object of the present invention to provide a method that enables the production of an electrophotographic photoreceptor having a light-receiving layer composed of a non-single-crystal material.

[0018]

According to the present invention, there is provided a method for manufacturing a photoreceptor member, comprising the steps of: providing an opposing discharge electrode in a vacuum-tight deposition chamber provided with an exhaust means and a source gas supply means. Applying high frequency power to one of the discharge electrodes, placing a substrate on the other electrode, introducing a source gas into the sediment, causing a glow discharge between the discharge electrodes, In a manufacturing method by a plasma CVD method for forming a non-single-crystal material having silicon atoms as a base material on a substrate, when forming the non-single-crystal material, the high-frequency power is pulse-fluctuated in two steps of high and low, and Is characterized by changing the higher value of.

When a light receiving member made of an amorphous silicon-based material is manufactured by a conventional continuous discharge, a phenomenon that cracks occur in a deposited film of the manufactured light receiving member hardly occurs. However, as shown in FIG. 5, when the light receiving member of the amorphous silicon material is manufactured by the same prescription as that of the conventional continuous discharge by intermittent discharge by turning on and off the high frequency power, the deposited film of the manufactured light receiving member is cracked. Sometimes occurred. Regarding this, the present inventor has influenced that the plasma is greatly changed by turning on and off the high-frequency power during the film formation. As a result, the deposited film receives a large stress, and the balance between the compressive stress and the tensile stress is lost. Therefore, it was considered that the deposited film was likely to be cracked.

Also, Y. Hishikawa [J. Appl. Phys. 62
(1987) 3150.] states that the plasma CVD method
2000cm in morphus silicon^{ー 1}Nearby S
As the infrared absorption of the iH bond increases, the compressive stress increases, and 2
100cm^{ー 1}Nearby Si-H _TwoIncreases infrared absorption of bonds
It has been reported that the tensile stress increases. So
Here, the present inventor has made the same by continuous discharge and intermittent discharge.
Make a sample of the conditions and compare the infrared absorption spectra
went.

As a result, the sample produced by the intermittent discharge was 2100 cm ^-1 more than the sample produced by the continuous discharge.
It was found that the infrared absorption of the nearby Si—H ₂ bond was large. Then, when a sample in which the high-frequency power was changed was also prepared and the infrared absorption spectra were compared, the sample prepared by intermittent discharge was more than the sample prepared by continuous discharge.
Infrared absorption in sensitive Si-H ₂ bonds in the vicinity of ^2100cm-1 to a high frequency power was found to vary.

Accordingly, the present inventor has proposed that the high-frequency power is pulse-modulated in two stages, high and low, while maintaining the improvement of the deposition rate and the reduction of the generation of powder, instead of the ON and OFF of the high-frequency power as in intermittent discharge. If the change in plasma is relatively small, and the stress is adjusted by the setting method of the high-frequency power to balance the compressive stress and the tensile stress, it is possible to reduce the occurrence of cracks in the deposited film described above. Thought.

Furthermore, infrared absorption of Si-H bonds in the vicinity of ^2000cm-1 is larger than the infrared absorption of the Si-H ₂ bonds in the vicinity of ^2100cm-1, the device characteristics superior transport properties of the carrier in general From a good point of view, it was considered that the characteristics of the deposited film could be improved by appropriately adjusting the compressive stress while balancing the compressive stress and the tensile stress by devising a method for setting the high-frequency power.

From the above, the inventor of the present invention has focused on the method of setting the high frequency power during the film formation and made intensive studies.

As a result, during the film formation, the high frequency power is pulse-modulated in two stages of high and low as shown in FIG. 4 instead of the high frequency power ON and OFF as in the intermittent discharge shown in FIG. It was found that cracking of the deposited film could be reduced by changing the higher value of the power. Further, at that time, it was found that a good deposited film having improved electric characteristics was obtained.

Specifically, the higher value of the high-frequency power is represented by P
H, where PL is the lower value and S is the surface area of the cathode electrode facing the glow discharge, PH / S is within a specific range, the portion where PH / S is continuously increased, and PH / S is constant. And the part where PH / S continues to decrease and PH
A portion where / S is constant, and a portion where PH / S is continuously increased or decreased for the entire time during which PH / S is applied from the start of film formation to the end of film formation. It was confirmed that the effect of the present invention was further improved by setting PL / S within a specific range.

In particular, when fabricating an amorphous silicon photoreceptor, the PH /
By making the part where PH / S continues to be increased over a certain period for the entire time during which S is applied, the cylindrical substrate side becomes denser, and the mobility of carriers generated by exposure is improved. It has been found that optical memory is reduced. When fabricating an amorphous silicon photoreceptor, the pH from the start of film formation to the end of film formation of the photoconductive layer is adjusted.
By making the part where PH / S continues to be reduced to a certain value or more for all Js to which / S is applied,
It has been found that the generation efficiency of photocarriers can be improved and the sensitivity is improved.

[0028]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A method for manufacturing a light receiving member according to the present invention will be described below with reference to the drawings.

FIG. 1 schematically shows an example of an apparatus used in the method of forming a deposited film according to the present invention. In FIG.
Reference numeral 100 denotes a deposition chamber for forming a deposited film, which is connected to an exhaust device (not shown) via an exhaust port 110. 1
Reference numeral 06 denotes a source gas inlet for introducing the source gas into the deposition chamber, and the source gas is introduced into the deposition chamber from a gas supply system (not shown). Reference numeral 102 denotes a substrate, which is set on the ground electrode 103. Reference numeral 104 denotes a substrate heating heater for heating the substrate 102 to a predetermined temperature, which is fixed in the deposition chamber. The high-frequency power supply 112 is composed of a high-frequency signal generator 111 capable of intermittently generating an original high-frequency signal in a pulse form and a high-frequency power amplifier 109 for amplifying the high-frequency signal from the high-frequency signal generator 111. It is wired so as to be applied to the cathode electrode 101 via the matching device 108.

FIG. 2 schematically shows another example of the apparatus used in the method of forming a deposited film according to the present invention, which is used for forming a deposited film on a cylindrical substrate such as an electrophotographic photosensitive member. It is suitable. In FIG. 2, reference numeral 200 denotes a deposition chamber for forming a deposited film, which is connected to an exhaust device (not shown) via an exhaust port 210. Reference numeral 206 denotes a source gas inlet for introducing the source gas into the deposition chamber, and introduces the source gas into the deposition chamber from a gas supply system (not shown). Reference numeral 202 denotes a cylindrical substrate, which is set on an auxiliary substrate 203 and has an upper portion held by a rotating shaft 205. Rotating shaft 205
Is rotatably mounted in the deposition chamber. Reference numeral 204 denotes a substrate heating heater for heating the cylindrical substrate to a predetermined temperature, which is fixed in the deposition chamber. Cylindrical substrate 2
Numeral 02 is rotated by a driving motor 207 via a rotating shaft 205 to make the film thickness uniform in the circumferential direction. The high-frequency power supply 212 includes a high-frequency signal generator 211 that can generate an original high-frequency signal intermittently in a pulse shape and a high-frequency power amplifier 2 that amplifies the high-frequency signal from the high-frequency signal generator 211
09, and the high-frequency output is wired so as to be applied to the cathode electrode 201 via the matching unit 208. As shown in the figure, the cathode electrode 201 may also serve as the inner wall of the deposition chamber 200.

FIG. 3 shows another example.
FIG. 2 except that 03 is suspended from the top.
Is the same as When the auxiliary base 303 is suspended from above as shown in FIG. 3, the inner surface of the auxiliary base 303 becomes only the base heater 304 and the space between the auxiliary base 303 and the base heater 304 expands. The range of reducing the diameter of the cylindrical substrate is preferably widened.

The above-mentioned ground electrode 103 and cylindrical substrate 20
The base materials 2 and 302 and the auxiliary bases 203 and 303 may be made of a material suitable for the purpose of use. For materials, copper, aluminum, gold, silver, platinum, lead, nickel,
Cobalt, iron, chromium, molybdenum, titanium, and stainless steel are preferred because of their good electrical conductivity. Further, two or more composite materials among these materials are also desirable for improving heat resistance.

The materials of the cathode electrodes 101, 201, 301 include copper, aluminum, gold, silver, platinum, lead, nickel, cobalt, iron, chromium, molybdenum, titanium,
Stainless steel or the like is preferable because it has good thermal conductivity and good electrical conductivity. Two or more composite materials among these materials are also suitably used. In addition, when producing an electrophotographic photoreceptor from the ease of processing, the shape is preferably a cylindrical shape, but if necessary, an elliptical shape, a polygonal shape may be used,
The shape may be selected according to the light receiving member to be manufactured.

The cathode electrodes 101, 201 and 301 may be provided with a cooling means as required. As specific cooling means, cooling with water, air, liquid nitrogen, a Peltier element, or the like is used as necessary.

High frequency signal generators 111, 211, 311
Any structure can be suitably used as long as it can generate a pulse variation suitable for a required light receiving member at an arbitrary duty ratio. As a method of changing the pulse, it is preferable to automatically change the pulse in order to avoid complexity during manufacturing. However, even if it is manually adjusted, the effect of the present invention is not affected at all.

High frequency power amplifiers 109, 209, 30
9 can suitably be used with any configuration as long as it can amplify power from 10 W to 5000 W suitable for the device.

The high frequency power supplies 112, 212, 3 used
The oscillation frequency of 12 is usually 13.56 MHz, which is often preferred, but is not particularly limited. As the output, any output can be suitably used as long as power suitable for the device can be generated. Further, the output fluctuation rate of the high frequency power supply may be any value.

The matching units 108, 208, 308 used
Any structure can be suitably used as long as it can match the load with the high-frequency power supply. Also,
As a method for obtaining matching, a method automatically adjusted is preferable in order to avoid complexity during manufacturing, but even if it is adjusted manually, the effect of the present invention is not affected at all.
Furthermore, as for the position where the matching device is arranged, there is no problem where the matching device is installed in a range where the matching can be achieved.
It is desirable to arrange the wiring between the matching unit and the cathode so that the inductance of the wiring is as small as possible, since matching can be performed under a wide load condition.

The formation of a deposited film in the apparatus shown in FIG. 1 is performed in the following procedure.

First, the substrate 102 is mounted on the ground electrode 103. Next, after the inside of the deposition chamber 100 is once evacuated by an exhaust device (not shown) through the exhaust port 110, a source gas introducing valve (not shown) is opened, and an inert gas for heating, for example, argon gas is supplied to the source gas introducing port. Introduced into the deposition chamber 100 from 106, so that the inside of the deposition chamber 100 has a desired pressure.
Adjust the exhaust speed of the exhaust device and the flow rate of the heating gas. After that, the substrate 102 is heated by the substrate heating heater 104 by operating a temperature controller (not shown). When the substrate 102 has been heated to a desired temperature, the unillustrated source gas introduction valve is closed, and the gas flow into the deposition chamber 100 is stopped.

The deposited film is formed by opening a source gas inlet valve (not shown) and feeding a predetermined source gas, for example, a source gas such as silane gas, hydrogen gas, or methane gas from the source gas inlet 106, or a doping gas such as diborane gas or phosphine gas. After the gas is mixed by a mixing panel (not shown), it is introduced into the deposition chamber 100, and the pumping speed is adjusted to maintain a desired pressure. After the pressure is stabilized, for example, the frequency 13.
A power of 56 MHz is supplied to generate glow discharge.
At this time, the matching unit 108 is adjusted so that the reflected wave is minimized. The value obtained by subtracting the reflected power from the high-frequency incident power is adjusted to a desired value. When a desired film thickness is formed, the supply of power is stopped, the flow of the raw material gas into the deposition chamber 100 is stopped, and the deposition chamber is temporarily stopped. Pull up to high vacuum to complete layer formation. When stacking deposited films having various functions, the above operation is repeated.

Further, the formation of a deposited film in the apparatus shown in FIG. 2 used when producing an electrophotographic photosensitive member is performed in the following procedure.

First, a cylindrical substrate 202 whose surface is mirror-finished using a lathe is attached to an auxiliary substrate 203, and the deposition chamber 2
Attached to the rotation shaft 205 in 00.

Next, after the inside of the deposition chamber 200 is once evacuated by an exhaust device (not shown) through the exhaust port 210, a source gas introducing valve (not shown) is opened and an inert gas for heating, for example, argon gas is supplied. Deposition chamber 200 from inlet 206
The evacuation speed of the evacuation device and the flow rate of the heating gas are adjusted so that the inside of the deposition chamber 200 has a desired pressure. Thereafter, the cylindrical substrate 2 is driven by the driving motor 207.
02 is operated by rotating a temperature controller (not shown) while the cylindrical substrate 202 is rotated.
To heat. In the deposition film forming apparatus shown in FIG. 2, the cylindrical substrate can be rotated. However, the effect of the present invention cannot be obtained unless the cylindrical substrate is rotated. The effect is obtained. When the cylindrical substrate 202 is heated to a desired temperature, the unillustrated source gas introduction valve is closed to stop the gas from flowing into the deposition chamber.

The deposited film is formed by opening a source gas inlet valve (not shown) and feeding a predetermined source gas, for example, a source gas such as silane gas, hydrogen gas, or methane gas from the source gas inlet 206, or a doping gas such as diborane gas or phosphine gas. After the gas is mixed by a mixing panel (not shown), it is introduced into the deposition chamber 200, and the exhaust speed is adjusted so as to maintain a desired pressure. After the pressure is stabilized, for example, the frequency 13.
A power of 56 MHz is supplied to generate glow discharge.
At this time, the matching unit 208 is adjusted so that the reflected wave is minimized. The value obtained by subtracting the reflected power from the high-frequency incident power is adjusted to a desired value. When a desired film thickness is formed, the supply of power is stopped, the flow of the source gas into the deposition chamber 200 is stopped, and the deposition chamber is temporarily stopped. Pull up to high vacuum to complete layer formation. During this time, it is desirable to form the deposited film while rotating the cylindrical substrate in order to equalize the film thickness in the circumferential direction. When stacking deposited films having various functions, the above operation is repeated. When the apparatus of FIG. 3 used in producing the electrophotographic photoreceptor is used,
The deposited film may be formed in the same manner as in the case of using the apparatus.

In producing a deposited film in the present invention,
It is preferable that the high-frequency power is pulse-fluctuated in two stages, high and low, and the higher value of the high-frequency power is changed. At this time, the higher value of the high frequency power is PH, and the lower value is P
L, assuming that the surface area of the cathode electrode facing the glow discharge is S, the portion where PH / S is continuously increased and PH / S is constant in the range of 25 mW / cm ² ≦ PH / S ≦ 350 mW / cm ² Or a part where PH / S is continuously reduced and a part where PH / S is constant, and the PH / S is applied for the entire time during which PH / S is applied from the start of film formation to the end of film formation.
/ S is continuously increasing or decreasing at a rate of 50% or more, and PH at the end of film formation and at the start of film formation
Assuming that the absolute value of the difference of / S is ΔPH / S, it is preferable that the range is 12 mW / cm ² ≦ ΔPH / S ≦ 300 mW / cm ² . PH / S is 25mW / c
less than m ² or more than 350 mW / cm ² , ΔPH / S is less than 12 mW / cm ² or 3
In a range larger than 00 mW / cm ² and a range in which the portion where PH / S is continuously increased or decreased is smaller than 50%, cracks and electrical characteristics of the deposited film (for example, charging in the case of an electrophotographic photosensitive member, Performance, residual potential, sensitivity, temperature characteristics, and electrophotographic characteristics such as optical memory).

[0047] Further PL / S preferably satisfies the ^{2mW / cm 2 ≦ PL / S} ≦ 14mW / cm 2. In the range where PL / S is less than ² mW / cm ² , cracks and electrical characteristics of the deposited film (for example, in the case of an electrophotographic photoreceptor, electrophotographic characteristics such as charging ability, residual potential, sensitivity, temperature characteristics and optical memory). Small effect on improvement, PL / S is 14m
In the range of more than W / cm ^{2, the} effect of improving the amount of generated powder and the electrical characteristics (for example, in the case of an electrophotographic photosensitive member, electrophotographic characteristics such as charging ability, residual potential, sensitivity, temperature characteristics, and optical memory). Is small, yet P
Regarding L / S, the above ² mW / cm ² or more and 14 mW
/ Cm ² or less, it does not affect the present invention even if it is constant or varies.

[0048]

EXAMPLES Hereinafter, the effects of the present invention will be specifically described with reference to experimental examples and examples, but the present invention is not limited thereto. Experimental Example 1 Oscillation frequency in the deposited film forming apparatus shown in FIG.
Using a 56 MHz high frequency power supply 112, an amorphous silicon film was formed on a glass substrate (Corning 7059) 120 under the conditions shown in Table 1. In this experimental example, when producing an amorphous silicon film, the RF power is pulsed in two steps of high and low (frequency 1 kHz), and the higher value of the RF power faces PH, the lower value faces PL, and faces glow discharge. When the surface area of the cathode power 101 is S, the duty ratio [(PH / S) application time / ΔPH /
S) application time + (PL / S) application time｝] 60%, PL
/ S = 10 mW / cm ² and PH / S was set as follows.

[IA] is an RF power PH / S = 200 mW / cm ² constant without varying the RF power in two steps, and [IB] is RF power PH / S.
= 200 mW / cm ² , PL / S = 0 and intermittent discharge, and [IC] pulsed RF power in two steps of high and low to produce PH / S = 200 mW / cm ² constant,
In [II], the RF power is pulse-fluctuated in two stages, high and low, and PH /
From S = 200 mW / cm ² to 300 mW / cm ² FIG.
As shown in (A), the increase was continued and [III] PH /
From S = 200 mW / cm ² to 100 mW / cm ² FIG.
As shown in (B), an amorphous silicon film was manufactured by continuously reducing the thickness.

[0050]

[Table 1]

* << Experimental Example 1 >>, << Experimental Example 2 >>, << Experimental Example 3 >>, << Experimental Example 4 >>, << Experimental Example 5 >>, << Experimental Example 6 >>,
<< Experimental example 7 >> Notation in the text The sample produced in Experimental example 1 was evaluated by the following method. (1) Cracking of Deposited Film A sample was prepared 50 times for each of Experimental Example 1 and the number of times that the deposited film cracked was determined in Experimental Example 1 [I-
B] was evaluated as follows.

A: 50% or more reduction from [IB] of Experimental Example 1 ○: 30 to 50% reduction from [IB] of Experimental Example 1 □: Equivalent to [IB] of Experimental Example 1 30% reduction Δ: equivalent to [IB] of Experimental Example 1 (2) Deposition rate The film thickness of the produced sample was calculated by measuring the spectral transmittance with a visible spectroscope. The film thickness was determined at three locations for each sample, the average film thickness was calculated, and the average film thickness was divided by the film formation time to determine the deposition rate. The evaluation criterion for the deposition rate was evaluated as follows based on Experimental Example 1 [IA].

A: 25% or more improvement over [IA] of Experimental Example 1 O: 10 to 25% improvement over [IA] of Experimental Example 1 □: With [IA] of Experimental Example 1 Equal to 10% improvement △: Equivalent to [IA] of Experimental Example 1 (3) Amount of generated powder After preparing a sample by placing a glass substrate in the lower part of the deposition chamber, taking out the amount of powder adhered to the glass substrate, It was measured with a balance. The evaluation criteria for the amount of generated powder are described in Example [I-
[A] was evaluated as follows.

：: 50% or more reduction from [IA] of Experimental Example 1 ○: 30 to 50% reduction from [IA] of Experimental Example 1 □: Equivalent to [IA] of Experimental Example 1 30% reduction Δ: Equivalent to [IA] of Experimental Example 1 (4) Light-dark conductivity ratio and (5) Characteristic energy (Eu) of exponential function tail (Urbach tail) Cr deposited on glass substrate A skewer electrode is deposited on
The light conductivity and the dark conductivity were measured using a mW helium neon laser as a light source, and the light-dark conductivity ratio (the ratio of the light conductivity to the dark conductivity) was determined. Further, the characteristic energy (Eu) of the exponential function tail (Urbuck tail) obtained from the sub-bandgap light absorption spectrum by the constant photocurrent method was measured. Then, [IB] of Experimental Example 1
Was set to 1.0 and the relative evaluation was performed.

Table 2 shows the evaluation results of Experimental Example 1 described above.

[0056]

[Table 2]

As can be seen from the results of Experimental Example 1, that is, Table 2, not high-frequency power ON / OFF, but pulse modulation of high-frequency power in two stages of high and low, and changing the higher value of high-frequency power. It was found that cracking of the deposited film could be reduced while maintaining the improvement of the deposition rate and the reduction of the generation of powder, and a good amorphous silicon film with improved electrical characteristics could be obtained. Experimental Example 2 Oscillation frequency in the deposited film forming apparatus shown in FIG.
An amorphous silicon film was formed on a glass substrate (Corning 7059) 102 under the conditions shown in Table 1 using a high frequency power supply 112 of 56 MHz. In this experimental example, when producing an amorphous silicon film, the RF power is pulsed in two steps of high and low (frequency 1 kHz), and the higher value of the RF power faces PH, the lower value faces PL, and faces glow discharge. When the surface area of the cathode electrode 101 is S, the duty ratio [(PH / S) application time / ｛(PH
/ S) application time + (PL / S) application time｝] 60%, P
L / S = 10 mW / cm ² and PH / S was continuously increased from the following [I] to [VI] to 100 mW / cm ^{2 as} shown in FIG. 4 (A).

[I] 20 mW / cm ² , [II] 25 m
W / cm ² , [III] 75 mW / cm ² , [IV] 15
0 mW / cm ² , [V] 250 mW / cm ² , [VI] 3
50 mW / cm ²

[0059]

[Table 3]

A sample of the produced amorphous silicon film was subjected to cracking of the deposited film, deposition rate,
The amount of generated powder, the light-to-dark conductivity ratio, and the characteristic energy (Eu) of the exponential function tail (Urbach tail) were evaluated.

Table 3 shows the results. As is clear from Table 3, it was found that the effect of the present invention can be obtained by continuously increasing PH / S in the range of 25 mW / cm ² ≦ PH / S ≦ 350 mW / cm ² . Experimental Example 3 Oscillation frequency in the deposited film forming apparatus shown in FIG.
An amorphous silicon film was formed on a glass substrate (Corning 7059) 102 under the conditions shown in Table 1 using a high frequency power supply 112 of 56 MHz. In this experimental example, when producing an amorphous silicon film, the RF power is pulse-fluctuated in two steps of high and low (frequency 1 kHz), and the higher value of the RF power is PH, the lower value is PL, and the RF is facing the glow discharge. When the surface area of the cathode electrode 101 is S, the duty ratio [(PH / S) application time / ｛(PH
/ S) application time + (PL / S) application time｝] 60%, P
L / S = 10 mW / cm ² and PH / S is 100 mW / cm ² from the following [I] to [VII].
And continued to decrease as indicated.

[I] 120 mW / cm ² , [II] 12
^{5mW / cm 2, [III]} 175mW / cm 2, [I
V] 250 mW / cm ² , [V] 350 mW / cm ² ,
[VI] 450 mW / cm ²

[0063]

[Table 4]

A sample of the produced amorphous silicon film was subjected to cracking of the deposited film, deposition rate,
The amount of generated powder, the light-to-dark conductivity ratio, and the characteristic energy (Eu) of the exponential function tail (Urbach tail) were evaluated.

Table 4 shows the results. As is clear from Table 4, it was found that the effect of the present invention can be obtained by continuously decreasing PH / S in the range of 25 mW / cm ² ≦ PH / S ≦ 350 mW / cm ² . Experimental Example 4 Oscillation frequency in the deposited film forming apparatus shown in FIG.
An amorphous silicon film was formed on a glass substrate (Corning 7059) 102 under the conditions shown in Table 1 using a high frequency power supply 112 of 56 MHz. In this experimental example, when producing an amorphous silicon film, the RF power is pulse-fluctuated in two steps of high and low (frequency 1 kHz), and the higher value of the RF power is PH, the lower value is PL, and the RF is facing the glow discharge. When the surface area of the cathode electrode 101 is S, the duty ratio [(PH / S) application time / ｛(PH
/ S) application time + (PL / S) application time｝] 60%, P
When L / S = 10 mW / cm ² and the difference between PH / S at the start of film formation and at the end of film formation is ΔPH / S, PH / S at the start of film formation is from 50 mW / cm ² to ΔPH / S was continuously increased in the following ranges [I] to [VI] as shown in FIG.

[I] 10 mW / cm ² , [II] 12 m
W / cm ² , [III] 100 mW / cm ² , [IV] 2
00 mW / cm ² , [V] 300 mW / cm ² , [VI]
350 mW / cm ²

[0067]

[Table 5]

A sample of the produced amorphous silicon film was subjected to cracking of the deposited film,
The amount of generated powder, the light-to-dark conductivity ratio, and the characteristic energy (Eu) of the exponential function tail (Urbach tail) were evaluated.

Table 5 shows the results. As is clear from Table 5, the difference between PH / S at the start of film formation and at the end of film formation is expressed as ΔPH / S
12 mW / cm ² ≦ ΔPH / S ≦ 300 mW
It has been found that the effect of the present invention can be obtained by continuously decreasing PH / S in the range of / cm ² . Experimental Example 5 Oscillation frequency in the deposited film forming apparatus shown in FIG.
An amorphous silicon film was formed on a glass substrate (Corning 7059) 102 under the conditions shown in Table 1 using a high frequency power supply 112 of 56 MHz. In this experimental example, when producing an amorphous silicon film, the RF power is pulse-fluctuated in two steps of high and low (frequency 1 kHz), and the higher value of the RF power is PH, the lower value is PL, and the RF is facing the glow discharge. When the surface area of the cathode electrode 101 is S, the duty ratio [(PH / S) application time / ｛(PH
/ S) application time + (PL / S) application time｝] 60%, P
When L / S = 10 mW / cm ² and the difference between PH / S at the start of film formation and at the end of film formation is ΔPH / S, PH / S at the start of film formation is from 350 mW / cm ² to ΔPH / S was continuously reduced in the following ranges [I] to [VI] as shown in FIG.

[I] 10 mW / cm ² , [II] 12 m
W / cm ² , [III] 100 mW / cm ² , [IV] 2
00 mW / cm ² , [V] 300 mW / cm ² , [VI]
330 mW / cm ²

[0071]

[Table 6]

A sample of the produced amorphous silicon film was subjected to cracking of the deposited film, deposition rate,
The amount of generated powder, the light-to-dark conductivity ratio, and the characteristic energy (Eu) of the exponential function tail (Urbach tail) were evaluated.

Table 6 shows the results. As is clear from Table 6, the difference between PH / S at the start of film formation and at the end of film formation is expressed as ΔPH / S
12 mW / cm ² ≦ ΔPH / S ≦ 300 mW
It has been found that the effect of the present invention can be obtained by continuously decreasing PH / S in the range of / cm ² . Experimental Example 6 PH / S in Experimental Examples 1 [II] and [III]
When changing 100 mW / cm ² from the start of the film formation to the end of the film formation, the part that continues to increase as shown in FIG. 4A and the part that continues to decrease as shown in FIG. (1) 25%, (2) 50%, (3) 75% and (4) 100% ([II] and [III] of Experimental Example 1) with respect to the total time during which PH / S was applied.
) To produce an amorphous silicon film. (That is, PH for the entire time of applying PH / S
The part where / S is constant is 75% in (1) and 50% in (2).
%, (3) is 25%, and (4) is 0).

[0074]

[Table 7]

[0075]

[Table 8]

A sample of the produced amorphous silicon film was subjected to cracking of the deposited film, deposition rate,
The amount of generated powder, the light-to-dark conductivity ratio, and the characteristic energy (Eu) of the exponential function tail (Urbach tail) were evaluated.

Table 7 shows the result of the change in [II] of Experimental Example 1, and Table 8 shows the result of the change in [III] of Experimental Example 1. As is clear from the results of Tables 7 and 8, the proportion of the continuously increasing portion and the continuously decreasing portion was 50% with respect to the total time during which PH / S was applied.
It has been found that the effects of the present invention can be obtained by the above. Experimental Example 7 PL / S in Experimental Examples 1 [II] and [III]
To (1) 1 mW / cm ² , (2) 2 mW / c
m ² , (3) 10 mW / cm ² (corresponding to [II] and [III] in Experimental Example 1), (4) 14 mW / cm ² ,
(5) An amorphous silicon film was manufactured by changing it to 16 mW / cm ² .

[0078]

[Table 9]

[0079]

[Table 10]

A sample of the produced amorphous silicon film was subjected to cracking of the deposited film, deposition rate,
The amount of generated powder, the light-to-dark conductivity ratio, and the characteristic energy (Eu) of the exponential function tail (Urbach tail) were evaluated.

Table 9 changed in [II] of Experimental Example 1 and Table 10 shows the result changed in [III] of Experimental Example 1. As is clear from the results of Tables 9 and 10, it was found that the effects of the present invention can be obtained by setting the range of ² mW / cm ² ≦ PL / S ≦ 14 mW / cm ² . Example 1 Oscillation frequency in the deposited film forming apparatus shown in FIG.
Using a 56 MHz high frequency power supply 212, an amorphous silicon electrophotographic photosensitive member was produced on a cylindrical substrate 202 made of aluminum and having a diameter of 108 mm under the conditions shown in Table 11. In this embodiment, when producing the photoconductive layer of the electrophotographic photoreceptor, the RF power is subjected to pulse fluctuation (frequency 1 kHz) in two steps of high and low, and the higher value of the RF power is PH, the lower value is PL, and the glow is glow. Cathode electrode 2 facing discharge
01 as S, the duty ratio [(PH /
S) application time / ｛(PH / S) application time + (PL / S)
Application time｝] 50%, PL / S = 10 mW / cm ^2, and PH / S was set as follows.

[IA] indicates that RF power is pulsed in two stages, high and low.
RF power PH / S = 200mW / cm without fluctuation^Twoone
[IB] indicates the RF power is PH / S
= 200mW / cm^Two, PL / S = 0 and produced by intermittent discharge
In [IC], RF power is pulsed in two stages, high and low.
Fluctuated PH / S = 200mW / cm^TwoMade constant,
In [II], the RF power is pulse-fluctuated in two stages, high and low, and PH /
S = 200mW / cm ^TwoTo 300mW / cm^TwoFigure 4
As shown in (A), the increase was continued and [III] PH /
S = 200mW / cm^TwoFrom 100mW / cm^TwoFigure 4
(B) As shown in FIG.
Was prepared.

[0083]

[Table 11]

* << Example 1 >> described in the text The electrophotographic photosensitive member produced in Example 1 was evaluated by the following method. (1) Cracking of Deposited Film For each of Example 1, 50 electrophotographic photoreceptors were manufactured, and the number of times that the deposited film was cracked was evaluated.
The following evaluation was performed based on [IB]. ：: 50% or more reduction from [IB] of Example 1 ○: 30 to 50% reduction from [IB] of Example 1 □: Equivalent to [IB] of Example 1 to 30% reduction Δ: equivalent to [IB] of Example 1 (2) Deposition rate The deposition rate was measured by measuring the film thickness of the produced electrophotographic photoreceptor at 16 places in the generatrix direction and 8 places in the circumferential direction using an overcurrent type film thickness meter. The average thickness was calculated by dividing the average thickness by the deposition time. The evaluation criterion for the deposition rate was the same as in Example 1 [I-
[A] was evaluated as follows. ◎: 25% or more improvement over [IA] of Example 1 ：: 10 to 25% improvement over [IA] of Example 1 □: Equivalent to [IA] of Example 1 to 10 % Improvement △: equivalent to [IA] of Example 1 (3) Amount of generated powder After a glass substrate was provided at the lower part of the deposition chamber and an electrophotographic photosensitive member was produced, the amount of powder taken out and taken out of the glass substrate was determined by an electron. It was measured with a balance. The evaluation criteria for the amount of generated powder were evaluated as follows based on Example 1 [IA]. ◎: 50% or more reduction from [IA] of Example 1 ○: 30 to 50% reduction from [IA] of Example 1 □: Equivalent to 30% to [IA] of Example 1 Reduction Δ: Equivalent to [IA] of Example 1. (4) Electrophotographic characteristics Each of the produced photoconductors was prepared by using an electrophotographic apparatus (NP manufactured by Canon Inc.).
-6650 was modified for experiment) and the electrophotographic properties were evaluated.

At this time, the process speed was 300 mm / s
ec, pre-exposure (700 nm LED) 4lux · s
ec, set to image exposure (LED having a wavelength of 680 nm), and with a potential sensor of a surface voltmeter (TREK Model 344) set at the developing device position of the electrophotographic apparatus under the condition of a charger current value of 1000 μA. The surface potential of the receiving member was measured, and the measured value was used as the charging ability.
The surface potential at x · sec was measured and defined as the residual potential.

Further, as for the optical memory potential, the potential difference between the surface potential in the non-image exposure state and the potential when the image was exposed and then charged again was measured by the same potential sensor under the above conditions.

The charging conditions were set so that the dark potential became 400 V, the light amount was adjusted so that the bright portion potential became 50 V, and the light amount at this time was evaluated as sensitivity.

The temperature was changed from room temperature (about 25 ° C.) to 45 ° C. by a drum heater built in the light receiving member, and the charging ability was measured under the above conditions.
The change in chargeability per ° C was taken as a temperature characteristic.

Thereafter, the image characteristics were evaluated using the halftone image, the text original, and the photographic original.

Regarding the respective potential characteristics, an experimental example 1
[IB] of 1.0 was set as 1.0, and the relative evaluation was performed as follows with respect to charging ability, residual potential, optical memory potential, sensitivity, and temperature characteristics. [Charging ability, residual potential, optical memory potential, sensitivity, temperature characteristic]: 25% or more improvement over [IB] of Example 1 ：: 10 to 25% over [IB] of Example 1 Improvement □: Equivalent to [IB] of Example 1 to 10% reduction Δ: Equivalent to [IB] of Example 1

[0091]

[Table 12]

As can be seen from the results of the first embodiment, that is, Table 12, not high-frequency power ON / OFF but high-frequency power pulse modulation in two stages of high and low, and changing the higher value of high-frequency power. With this, it is possible to reduce the cracks in the deposited film while maintaining the improvement of the deposition rate and the reduction of powder generation,
It has been found that a good amorphous silicon electrophotographic photoreceptor having improved electrophotographic properties can be obtained.

In particular, it has been found that the continuous increase of PH / S is effective in improving the optical memory potential, and the continuous decrease of PH / S is effective in improving the sensitivity.

Further, when the obtained electrophotographic photoreceptor was installed in a Canon copier NP-6650 modified for experiment and an image was taken out, there was no unevenness in the halftone image.
A uniform image was obtained. Further, when the text original was copied, a clear image having a high black density was obtained. Also, when copying a photographic original, a clear image faithful to the original could be obtained. Example 2 Oscillation frequency in the deposited film forming apparatus shown in FIG.
Using a high frequency power supply 212 of 56 MHz, aluminum diameters of 108 mm, 80 mm, 60 mm, 30 mm
An amorphous silicon electrophotographic photoreceptor was produced on the cylindrical substrate 202 under the conditions shown in Table 13. In this embodiment, when producing the photoconductive layer of the electrophotographic photoreceptor, the RF power is subjected to pulse fluctuation (frequency 1 kHz) in two steps of high and low, and R
When the higher value of the F power is PH, the lower value is PL, and the surface area of the cathode electrode 201 facing the glow discharge is S, the duty ratio [(PH / S) application time / ｛(P
H / S) application time + (PL / S) application time｝] 55%
PL / S = 8 mW / cm ² and PH / S = PH / S =
FIG from 350 mW / cm ² to 120 mW / cm ² 4
As shown in (B), the photoreceptor for electrophotography was manufactured by continuously reducing the amount.

[0095]

[Table 13]

* << Example 2 >> Notation in the text The prepared electrophotographic photosensitive member was subjected to cracking of the deposited film, deposition rate, amount of generated powder, charging ability, residual potential, and optical memory potential in the same manner as in Example 1. The evaluation was made on the sensitivity, temperature and temperature characteristics. As a result, as with [III] of Example 1, good results were obtained for all the electrophotographic photoconductors.

Further, the obtained electrophotographic photoreceptor was tested.
Installed on a Canon copier NP-6650 modified for
When I put out the image, there was no unevenness in the halftone image,
A uniform image was obtained. In addition, the text manuscript was copied.
On the other hand, a clear image having a high black density was obtained. Also a photo manuscript
You can obtain a clear image that is faithful to the original even when copying
done. Example 3 Oscillation frequency in the deposited film forming apparatus shown in FIG.
Using a high frequency power supply 312 of 56 MHz,
108mm, 80mm, 60mm, 30mm
Under the conditions shown in Table 13 on the cylindrical substrate 202 of FIG.
A Rufus silicon electrophotographic photosensitive member was manufactured. This embodiment
In the production of the photoconductive layer of the electrophotographic photosensitive member,
The force fluctuates in two steps, high and low (frequency 1 kHz).
The higher value of F power is PH, the lower value is PL, glow
Let S be the surface area of the cathode electrode 201 facing the discharge.
The duty ratio [(PH / S) application time / ｛(P
H / S) application time + (PL / S) application time｝] 60%,
PL / S = 12 mW / cm ^TwoAnd PH / S is PH / S
= 135mW / cm^TwoTo 330mW / cm^TwoFigure 4
(A) As shown in FIG.
Was prepared.

[0098]

[Table 14]

* << Example 3 >> Notation in the text The prepared electrophotographic photosensitive member was subjected to cracking of the deposited film, deposition rate, amount of generated powder, charging ability, residual potential, and optical memory potential in the same manner as in Example 1. The evaluation was made on the sensitivity, temperature and temperature characteristics. As a result, as with [II] of Example 1, good results were obtained for all the electrophotographic photoconductors.

Further, the obtained electrophotographic photoreceptor was set on a Canon copier NP-6650 modified for experiment, and an image was displayed. As a result, there was no unevenness in the halftone image.
A uniform image was obtained. Further, when the text original was copied, a clear image having a high black density was obtained. Also, when copying a photographic original, a clear image faithful to the original could be obtained. Embodiment 4 Oscillation frequency in the deposited film forming apparatus shown in FIG.
Using a high frequency power supply 212 of 56 MHz, aluminum diameters of 108 mm, 80 mm, 60 mm, 30 mm
Under the conditions shown in Table 15, an amorphous silicon electrophotographic photosensitive member was produced on the cylindrical substrate 202 of the above. In this embodiment, when producing the photoconductive layer of the electrophotographic photoreceptor, the RF power is subjected to pulse fluctuation (frequency 1 kHz) in two steps of high and low, and R
When the higher value of the F power is PH, the lower value is PL, and the surface area of the cathode electrode 201 facing the glow discharge is S, the duty ratio [(PH / S) application time / ｛(P
H / S) application time + (PL / S) application time｝] 65%
PL / S = ² mW / cm ² , PH / S = PH / S =
FIG from 200 mW / cm ² to 345 mW / cm ² 4
As shown in (A), the photoreceptor for electrophotography was manufactured by continuously reducing the amount.

[0101]

[Table 15]

* << Embodiment 4 >> Indicated in the text The prepared electrophotographic photoreceptor was subjected to cracking of the deposited film, deposition speed, amount of generated powder, charging ability, residual potential, and optical memory potential in the same manner as in Example 1. The evaluation was made on the sensitivity, temperature and temperature characteristics. As a result, as with [II] of Example 1, good results were obtained for all the electrophotographic photoconductors.

Further, the obtained electrophotographic photoreceptor was tested.
Installed on a Canon copier NP-6650 modified for
When I put out the image, there was no unevenness in the halftone image,
A uniform image was obtained. In addition, the text manuscript was copied.
On the other hand, a clear image having a high black density was obtained. Also a photo manuscript
You can obtain a clear image that is faithful to the original even when copying
done. Example 5 Oscillation frequency in the deposited film forming apparatus shown in FIG.
Using a high frequency power supply 312 of 56 MHz,
108mm, 80mm, 60mm, 30mm
Under the conditions shown in Table 16 on the cylindrical substrate 202 of FIG.
A Rufus silicon electrophotographic photosensitive member was manufactured. This embodiment
In the production of the photoconductive layer of the electrophotographic photosensitive member,
The force fluctuates in two steps, high and low (frequency 1 kHz).
The higher value of F power is PH, the lower value is PL, glow
Let S be the surface area of the cathode electrode 201 facing the discharge.
The duty ratio [(PH / S) application time / ｛(P
H / S) application time + (PL / S) application time｝] 45%
PL / S = 14mW / cm ^TwoAnd PH / S is PH / S
= 220mW / cm^TwoFrom 75mW / cm^TwoChange to
At the time of the reduction, as shown in FIG.
To 65% of the total time of PH / S application
A photoreceptor for electrophotography was prepared (that is, PH / S was applied
The ratio of PH / S is 35% for the entire time
).

[0104]

[Table 16]

* << Example 5 >> Notation in the text The prepared electrophotographic photoreceptor was subjected to cracking of the deposited film, deposition rate, amount of generated powder, charging ability, residual potential, and optical memory potential in the same manner as in Example 1. The evaluation was made on the sensitivity, temperature and temperature characteristics. As a result, as with [III] of Example 1, good results were obtained for all the electrophotographic photoconductors.

The obtained electrophotographic photoreceptor was further tested.
Installed on a Canon copier NP-6650 modified for
When I put out the image, there was no unevenness in the halftone image,
A uniform image was obtained. In addition, the text manuscript was copied.
On the other hand, a clear image having a high black density was obtained. Also a photo manuscript
You can obtain a clear image that is faithful to the original even when copying
done. Embodiment 6 Oscillation frequency in the deposited film forming apparatus shown in FIG.
Using a high frequency power supply 312 of 56 MHz,
108mm, 80mm, 60mm, 30mm
Under the conditions shown in Table 17,
A Rufus silicon electrophotographic photosensitive member was manufactured. This embodiment
In the production of the photoconductive layer of the electrophotographic photosensitive member,
The force fluctuates in two steps, high and low (frequency 1 kHz).
The higher value of F power is PH, the lower value is PL, glow
Let S be the surface area of the cathode electrode 201 facing the discharge.
The duty ratio [(PH / S) application time / ｛(P
H / S) application time + (PL / S) application time｝] 55%
PL / S = 14mW / cm ^TwoAnd PH / S is PH / S
= 310mW / cm^TwoTo 150mW / cm^TwoChanged up to
When increasing, as shown in FIG.
To 70% of the total time of PH / S application
To produce an electrophotographic photoreceptor (ie, applying PH / S
30% of PH / S is constant for all time
Become).

[0107]

[Table 17]

* << Example 6 >> Notation in the text The prepared electrophotographic photosensitive member was subjected to cracking of the deposited film, deposition rate, amount of generated powder, charging ability, residual potential, and optical memory potential in the same manner as in Example 1. The evaluation was made on the sensitivity, temperature and temperature characteristics. As a result, as with [II] of Example 1, good results were obtained for all the electrophotographic photoconductors.

Further, the obtained electrophotographic photoreceptor was installed in a Canon copier NP-6650 modified for experiment, and an image was displayed. As a result, there was no unevenness in the halftone image.
A uniform image was obtained. Further, when the text original was copied, a clear image having a high black density was obtained. Also, when copying a photographic original, a clear image faithful to the original could be obtained.

[0110]

According to the present invention, when producing a deposited film of an amorphous silicon material, the yield of the deposited film is reduced by reducing the occurrence of cracks in the deposited film while improving the deposition rate and reducing the generation of powder. And a method for manufacturing a deposited film composed of a non-single-crystal material containing silicon atoms as a base material, which has improved electrical characteristics and dramatically improved electrical characteristics.

According to the present invention, for example, in a photoreceptor for electrophotography, the deposition rate is improved, the generation of cracks in the deposited film is reduced while the generation of powder is reduced, and the yield is improved. In addition, a photoreceptor composed of a non-single-crystal material based on silicon atoms, which achieves a remarkable improvement in image quality by simultaneously improving the charging ability and sensitivity and reducing the temperature characteristics and optical memory at a high level. It is possible to manufacture an electrophotographic photosensitive member having a member.

[Brief description of the drawings]

FIG. 1 is a schematic diagram showing an example of a deposited film forming apparatus provided for depositing a light receiving member using the deposited film forming method of the present invention.

FIG. 2 is a schematic view showing another example of a deposited film forming apparatus provided for depositing a light receiving member using the deposited film forming method of the present invention.

FIG. 3 is a schematic view showing another example of a deposited film forming apparatus provided for depositing a light receiving member using the deposited film forming method of the present invention.

FIGS. 4A and 4B are schematic diagrams showing an example of a change in high-frequency power in the method for forming a deposited film of the present invention.

FIG. 5 is a schematic diagram showing an example of a change in high frequency power in a conventional method for forming a deposited film.

[Explanation of symbols]

 100, 200, 300 Deposition chambers 101, 201, 301 Cathode electrode 102 Substrate 202, 302 Cylindrical substrate 103 Ground electrode 203, 303 Auxiliary substrate 104 Substrate heating heater 204, 304 Substrate heating heater 205, 305 Rotating shaft 106, 206 , 306 Source gas inlet 207, 307 Driving motor 108, 208, 308 Matching device 109, 209, 309 High frequency power amplifier 110, 210, 310 Exhaust port 111, 211, 311 High frequency signal generator 112, 212, 312 High frequency power supply

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) // B01J 19/08 B01J 19/08 H (72) Inventor Makoto Aoki 3-30 Shimomaruko, Ota-ku, Tokyo 2 Canon Inc. (72) Inventor Hiroaki Shinno 3-30-2 Shimomaruko, Ota-ku, Tokyo F-term in Canon Inc. (Reference) 2H068 DA00 EA24 4G075 AA24 BC04 BD14 CA47 FB01 4K030 BA30 CA14 EA01 EA11 FA01 KA05 KA24 KA30 LA17 5F045 AA08 AB04 AC19 AD06 AE19 BB16 CA16 DP25 EH14 EH15 EH19 GB15

Claims (4)

[Claims] An opposing discharge electrode is provided in a vacuum-tight hermetic deposition chamber provided with an exhaust means and a source gas supply means,
A high-frequency power is applied to one of the discharge electrodes, a substrate is placed on the other electrode, a source gas is introduced into the deposition chamber to cause a glow discharge between the discharge electrodes, and a glow discharge is generated on the substrate. In a manufacturing method by a plasma CVD method for forming a non-single-crystal material having silicon atoms as a base, when forming the non-single-crystal material, the high-frequency power is pulse-fluctuated in two steps of high and low, and the high-frequency power is high. A method for producing a deposited film, characterized by changing one of the values. 2. When the higher value of the high frequency power is PH and the surface area of the discharge electrode facing the glow discharge to which the high frequency power is applied is S, 25 mW / cm ² ≦ PH / S ≦ 350 mW / In the range of cm ^2, the part where PH / S is continuously increased and the part where PH / S is constant, or the part where PH / S is continuously decreased and P
It consists of a portion where H / S is constant, and PH / S is applied to the entire time during which PH / S is applied from the start to the end of film formation.
The part that keeps increasing or decreasing S is 5
0% or more, and PH at the end of film formation and at the start of film formation
^{2. The} method according to claim 1, wherein when the absolute value of the difference between / S and △ PH / S is 12 mW / cm ² ≦ △ PH / S ≦ 300 mW / cm ² . 3. When the surface area of a discharge electrode for applying the high-frequency power facing the glow discharge is S, the surface area of the discharge electrode facing the glow discharge is ² mW / cm ² ≦ PL / S ≦ 14.
^{3. The} method for producing a deposited film according to claim 1, wherein mW / cm ² is satisfied. 4. A substrate heater is fixed in the deposition chamber, and a cylindrical substrate having an auxiliary substrate also serving as a discharge electrode is rotatably installed so as to include the substrate heater. A glow discharge is generated by applying a high-frequency power between a cathode electrode provided substantially coaxially and enclosing a photoconductive layer of an electrophotographic light receiving member on the cylindrical substrate. The method for producing a deposited film according to claim 1, wherein: