JP2001300455A - Method for cleaning material to be cleaned and device therefor - Google Patents

Abstract

PROBLEM TO BE SOLVED: To make high cleaning effect obtainable with a small amount of solution by significantly enhancing the efficiency to use activated oxygen atoms and efficiently perform the cleaning in a short time with a small scale and simple device constitution. SOLUTION: A solution which generates activated oxygen atoms by means of light energy is applied to the surface of a material 1 to be cleaned using a spinner device 2 to obtain a coated material. Then a thin solution layer formed on the surface to be cleaned of the coated material is uniformly irradiated with the light from an illumination unit 3. Thus the activated oxygen atom generated in the solution is used to oxidize and remove an organic pollutant or a used resist.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method and an apparatus for cleaning an object to be processed, and more particularly to a method and an apparatus for cleaning a surface of an object to be cleaned by removing used resist and / or contaminants by oxidation of active oxygen atoms. For example, the present invention relates to a method particularly effective in removing used resist, contaminants, and the like attached to the surface of a semiconductor wafer, a liquid crystal substrate, or the like.

[0002]

2. Description of the Related Art For example, in a semiconductor integrated circuit manufacturing process, a predetermined circuit pattern is formed on a semiconductor wafer by repeating pattern exposure, etching, and deposition steps using a photoresist.
In such a process, a cleaning step for removing used resist, organic contaminants, and the like remaining on the surface of the semiconductor wafer is frequently performed. In addition, since the resist is not required after the steps such as the etching and the deposition, the cleaning operation for removing the used resist is repeatedly performed. Therefore, conventionally, the following two methods have been often used for cleaning a semiconductor wafer, a liquid crystal substrate, and the like.

The first method is to use an aqueous solution of hydrogen peroxide to which NH ₄ OH or HCl or H ₂ SO ₄ is added as a cleaning solution, and immerse an object to be cleaned in the cleaning solution to generate active oxygen atoms generated by the cleaning solution. Is a method of oxidizing and removing contaminants on the surface of the object to be cleaned. The aqueous solution of hydrogen peroxide as a cleaning solution is prepared by adding NH ₄ OH or HCl or H ₂ SO ₄ and
When heated to ° C., decomposition into H ₂ O and O is promoted. O generated by this decomposition is active oxygen atoms having high reactivity, and these active oxygen atoms oxidize organic contaminants and used resist on the surface of the object to be cleaned. After this oxidation treatment,
This is a method in which the cleaning liquid and the substance to be oxidized adhering to the surface of the object to be cleaned are washed away with pure water (pure water rinsing) to remove stains on the surface to be cleaned and used resist. In this method,
Oxidation of contaminants and used resist is performed by immersing the object to be cleaned in a tank containing the above-mentioned cleaning liquid. Rinsing with pure water and drying are performed by rotating the object to be cleaned on a high-speed rotating table (spinner device). While doing it.

A second method is to place an object to be cleaned in an airtight container filled with ozone gas, and irradiate the object to be cleaned with ultraviolet rays to decompose ozone gas O ₃ into oxygen molecules O ₂ and active oxygen atoms O. It is. The active oxygen atoms O generated at this time oxidize organic contaminants and used resist on the surface of the object to be cleaned. Thereafter, in the same manner as in the first method, pure water rinsing is performed to remove organic contaminants and used resist on the surface to be cleaned.

[0005]

The inventors of the present invention have found that the above-mentioned prior art has the following problems. That is, the first method has a problem that the use efficiency of the cleaning liquid is low. This means that among the active oxygen atoms generated by the cleaning solution, only the active oxygen atoms that occur by chance in the mean free path where contaminants, etc., can contribute to the oxidative removal of contaminants and used resist are removed. This is because most of the other active oxygen atoms do not contribute to oxidation of contaminants or the like, but are bonded to each other in a region near the generated oxygen atoms, resulting in oxygen molecules O ₂ having low activity.

As a result, the low use efficiency of the cleaning liquid has to be compensated for by the amount of the cleaning liquid, which causes a problem of an increase in cost and a large amount of cleaning waste liquid which is difficult to treat. In addition, in this method, the oxidation of contaminants is immersed in the tank, and pure water rinsing and drying are performed on the spinner. In addition, there is a problem that the cost of the apparatus is increased due to the installation of the transfer apparatus and the like.

The second method also has a problem that the utilization efficiency of ozone gas is low as in the first method. Of the active oxygen atoms generated from the ozone gas, the only ones that can contribute to the oxidative removal of contaminants and used resist are those that happened to occur in places where contaminants and used resist exist in the mean free path. Therefore, most of the other active oxygen atoms do not contribute to the oxidation of the contaminant or the used resist, and are bonded to each other in the region near the generated oxygen atoms to form oxygen molecules O ₂ having low activity.
In addition to this, the light irradiated to the ozone gas, especially the short wavelength light such as ultraviolet light, has a large attenuation in the gas, so decomposition and generation of active oxygen atoms are relatively active near the ultraviolet light source, In the vicinity of the object to be cleaned, light energy is greatly attenuated, so that the amount of active oxygen atoms decomposed and generated there is relatively small. In addition, the configuration of the device for filling the airtight container with ozone gas is more complicated and large-scale than the configuration of the device used in the first method. In addition, since a large amount of highly dangerous ozone gas is handled, safety measures are also large. There is a problem that it becomes necessary.

SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned problems, and greatly enhances the use efficiency of active oxygen atoms in a solution to achieve a high cleaning effect and a removal effect of a used resist with a small amount of a solution. It is an object of the present invention to provide a cleaning method and apparatus which can be obtained and can efficiently perform the cleaning in a short time with a small-scale and simple apparatus configuration.

[0009]

According to a first aspect of the present invention, a solution that generates active oxygen atoms when a surface of a body to be cleaned is irradiated with light is applied to form a coated body, and the solution is irradiated with light. A resist and / or a contaminant on the object to be cleaned.

A second invention is the method for cleaning a body to be cleaned according to the first invention, wherein the thickness of the coating body of the solution for generating active oxygen atoms is 3 μm to 300 μm.

In a third aspect of the present invention, the solution applied to the surface to be cleaned is a hydrogen peroxide solution.
The cleaning method of a body to be cleaned according to the invention of the first aspect.

A fourth invention is the method for cleaning a body to be cleaned according to the first or second invention, wherein the solution applied to the surface to be cleaned is ozone water.

According to a fifth aspect of the present invention, there is provided the method for cleaning an object to be cleaned according to any one of the first to fourth aspects, wherein a surfactant is added to the solution for generating active oxygen atoms. is there.

A sixth invention is the method for cleaning a body to be cleaned according to any one of the first to fifth inventions, wherein choline is added to the solution for generating active oxygen atoms.

According to a seventh aspect of the present invention, there is provided the cleaning method of any one of the first to fifth aspects, wherein tetramethyl ammonium hydroxide is added to the solution for generating active oxygen atoms. Is the way.

An eighth invention is the method for cleaning an object to be cleaned according to any one of the first to seventh inventions, wherein HCl is added to the solution for generating active oxygen atoms.

A ninth aspect of the present invention is the method for cleaning an object to be cleaned according to any one of the first to eighth aspects, wherein H ₂ SO ₄ is added to the solution for generating active oxygen atoms. It is.

A tenth invention is characterized in that NH ₄ OH is added to the solution for generating active oxygen atoms.
A method for cleaning an object to be cleaned according to any one of the first to seventh aspects.

An eleventh invention is characterized in that a chelating agent is added to the solution for generating active oxygen atoms.
A method for cleaning an object to be cleaned according to any one of the first to tenth aspects.

A twelfth aspect of the present invention is the method for cleaning an object to be cleaned according to any one of the first to eleventh aspects, wherein a thickener is added to the solution for generating active oxygen atoms. is there.

According to a thirteenth aspect, in the method according to any one of the first to twelfth aspects, a spinner device is used when applying the solution for generating active oxygen atoms to the surface of the object to be cleaned. This is a method for cleaning an object to be cleaned.

A fourteenth aspect of the present invention is the liquid crystal display device according to any one of the first to twelfth aspects, wherein a liquid ejecting apparatus is used when applying the solution for generating active oxygen atoms to the surface of the object to be cleaned. It is a washing | cleaning method of the to-be-washed body of said description.

According to a fifteenth aspect, in the cleaning method of the first to fourteenth aspects, the solution for generating active oxygen atoms is irradiated with light having a wavelength of 500 nm or less. Is the way.

According to a sixteenth aspect, in the cleaning of the object to be cleaned according to any one of the first to fourteenth aspects, the solution for generating active oxygen atoms is irradiated with light having a wavelength of 400 nm or less. Is the way.

According to a seventeenth aspect, after the step of removing the resist and / or contaminants on the object to be cleaned, a cleaning treatment using pure water and / or an organic solvent is performed. A method for cleaning an object to be cleaned according to any one of the sixteenth aspects.

According to an eighteenth aspect of the present invention, there is provided a coating apparatus for applying a solution that generates active oxygen atoms when the surface of an object to be cleaned is irradiated with light to form a coated body, and a light irradiation apparatus for irradiating the solution with light. And a cleaning device for the object to be cleaned, wherein the resist and / or contaminants on the object to be cleaned are removed.

A nineteenth aspect of the present invention is the apparatus for cleaning an object to be cleaned according to the eighteenth aspect, wherein the thickness of the applied body of the solution for generating active oxygen atoms is 3 μm to 300 μm.

According to a twentieth aspect of the present invention, there is provided the cleaning object according to the eighteenth or nineteenth aspect, wherein a spinner device is used when applying the solution for generating the active oxygen atoms to the surface of the cleaning object. Body washing device.

According to a twenty-first aspect of the present invention, in applying the solution for generating active oxygen atoms to the surface of the object to be cleaned, a liquid ejecting apparatus is used. This is a cleaning device for a cleaning body.

According to a twenty-second aspect, in the cleaning method of any one of the eighteenth to twenty-first aspects, the solution for generating active oxygen atoms is irradiated with light having a wavelength of 500 nm or less. Device.

According to a twenty-third aspect, in the cleaning of the object to be cleaned according to any one of the eighteenth to twenty-first aspects, the solution for generating active oxygen atoms is irradiated with light having a wavelength of 400 nm or less. Device.

[0032]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Preferred embodiments of the present invention will be described below with reference to the drawings. (Embodiment 1) FIG. 1 shows a schematic configuration of a cleaning apparatus used for carrying out a cleaning method according to the present invention. The main part of the apparatus shown in FIG. 1 includes a spinner device 2 as a rotation drive unit for rotating the object 1 to be cleaned, an illumination unit 3 as a light irradiation unit, a solution supply unit 4, and a cleaning medium supply unit 5.

The spinner device 2 holds and rotates a flat object 1 to be cleaned such as a semiconductor wafer so that the surface to be cleaned rotates on the same plane. For this reason, the turntable 2 provided with a holding mechanism for sucking and holding the object 1 to be cleaned.
1 and a drive mechanism 22 for rotating the turntable 21 at high speed.

The illumination unit 3 includes a light source 31, a hexagonal quartz rod 32, a light projecting lens 33, and the like, and is located above the spinner device 2. The light source 31 includes a light emitting unit such as a lamp that efficiently emits light having a short wavelength,
It is composed of a wavelength-selective reflection mirror, and selectively reflects light having a wavelength shorter than 500 nm in one direction (downward in the figure).
Project to This projection light is made incident on the upper hexagonal light incident surface of the hexagonal quartz rod 32. The light that has entered the hexagonal quartz rod 32 has a uniform illuminance distribution on the lower hexagonal light exit surface by repeating multiple reflections on the side surfaces of the hexagonal prism. The hexagonal light emitting surface with uniform illuminance is projected onto the surface to be cleaned on the spinner device 2 by the lens 33. As a result, the surface to be cleaned is uniformly irradiated with light having a wavelength of 500 nm or less.

The solution supply unit 4 and the cleaning medium supply unit 5 have nozzles 41 and 51, respectively, which are pivotally mounted so as to be located alternately above the surface to be cleaned. The solution supply unit 4 supplies hydrogen peroxide water or ozone water as a solution for cleaning or used resist stripping to the surface to be cleaned. For the cleaning medium supply unit 5,
Pure water and / or an organic solvent as a cleaning medium is supplied to the surface to be cleaned.

The cleaning by the above device is performed as follows. First, the object 1 to be cleaned is mounted on a turntable of the spinner device 2 so that the surface to be cleaned is rotated on a horizontal plane. With the nozzle 41 of the solution supply unit 4 positioned above the object 1 to be cleaned, a predetermined amount of a solution (hydrogen peroxide or ozone water) is dropped from the nozzle 41 onto the surface to be cleaned. Thereafter, the object to be cleaned 1 is rotated, and the solution is uniformly spinner-coated on the surface to be cleaned to obtain a coated object of the solution to be cleaned.

According to this method, since the solution only needs to be applied on the surface to be cleaned, the amount used is small.
In addition, since the coating solution on the surface to be cleaned is developed in a thin layer, the light applied thereto is attenuated in the middle, even if the light is a short wavelength light having a large attenuation rate in the liquid. Thus, active oxygen atoms can be efficiently generated by being intensively absorbed by the solution near the surface to be cleaned.

In this coated body, the thickness of the solution applied to the surface to be cleaned is preferably 3 μm to 300 μm. 3 μm
If it is thinner, the number of atoms of active oxygen O required for oxidation may be insufficient, and the cleaning power may be insufficient. If the thickness exceeds 300 μm, when irradiated with light, two active oxygen atoms are bonded to each other to activate the active oxygen atoms O generated in the surface layer of the solution before reaching the contaminants to be oxidized or the used resist. This is because the O ₂ becomes low in degree and the detergency may decrease.

In general, it is preferable that the thickness of the solution is minimized in consideration of the number of active oxygen atoms required for oxidation. When the application is completed, the nozzle 41 of the solution supply unit 4 is retracted to the side from above the surface to be cleaned, and the application surface on the surface to be cleaned is uniformly irradiated by the illumination unit 3.

Thus, the coating solution on the surface to be cleaned absorbs light energy to generate active oxygen atoms O. At this time, since the coating solution on the surface to be cleaned is developed in a thin layer, even if the light applied thereto is short-wavelength light having a large attenuation rate in the solution, it is attenuated in the middle. Instead, the active oxygen atoms can be efficiently generated by being intensively absorbed by the coating solution close to the surface to be cleaned. As described above, the active oxygen atoms O are generated in the coating solution layer which is applied to the surface to be cleaned and spread thinly. Therefore, even if the mean free path is short, the active oxygen atoms O generated in the solution layer of the coated body have a high probability that contaminants or used resist on the surface to be cleaned are within the short free path. And contribute to the oxidation of the contaminant.

After the oxidation, the nozzle 51 of the cleaning medium supply unit 5 is positioned above the surface to be cleaned, and pure water and / or an organic solvent is supplied as the cleaning medium while rotating the object 1 to be cleaned. Then, the coating solution remaining on the surface to be cleaned and the substance to be oxidized are cleaned. Thereafter, a drying process is performed by rotating the object to be cleaned in a state where the supply of the pure water and / or the organic solvent is stopped.

As described above, a high cleaning effect can be obtained by efficiently utilizing the slight amount of active oxygen atoms O generated from a small amount of the cleaning liquid. In a series of cleaning steps such as application of a solution, oxidation by active oxygen atoms O, rinsing with pure water and / or an organic solvent, and drying, the object 1 to be cleaned is kept mounted on the turntable 21 of the spinner device 2. And can be performed smoothly and in a short time. As a result, the use efficiency of the active oxygen atoms O can be greatly increased, and a high cleaning effect can be obtained with a small amount of solution, and the cleaning can be efficiently performed in a short time with a small-sized and simple apparatus configuration. Can be.

Here, as the solution to be applied to the surface to be cleaned, hydrogen peroxide water or ozone water can be used. Hydrogen peroxide is converted into H ₂ O ₂ by light energy.
Active oxygen atoms O are generated by decomposition into ₂ O and O.
Similarly, ozone water generates active oxygen atoms O by decomposing O ₃ into O ₂ and O. Both solutions (hydrogen peroxide solution, ozone water) generate active oxygen atoms O in a state where they are thinly applied to the surface to be cleaned. The active oxygen atoms O generated in this state can react with the contaminants on the surface to be cleaned and the used resist with a high probability within the short free path even if the mean free path is short. Thereby, both the hydrogen peroxide solution and the ozone water can obtain a high cleaning effect with a small amount of use.

Light for generating active oxygen atoms O is
Since the irradiation is performed toward the solution layer of the application body, most of the light reaches the solution near the surface to be cleaned without being attenuated on the way, and is efficiently absorbed. Thereby, the light energy of the irradiation light is also efficiently used for generating the active oxygen atoms O. As the irradiation light, high-energy light having a short wavelength, particularly a wavelength of 500 nm or less, preferably a wavelength of 4 nm or less.
Light having a wavelength of 00 nm or less is effective for generating active oxygen atoms from the solution. In particular, light in the ultraviolet region of 400 nm or less has a high reaction energy, but has a contradiction that it is difficult to reach a deep portion due to a large attenuation rate in a liquid.In the present invention, such high-energy short-wavelength light is also used. It can be used efficiently without attenuation.
Therefore, in the present invention, as the illumination light, a wavelength of 400
By using the light of nm or less, the cleaning process can be performed with higher efficiency.

When a contaminant or a used resist has water repellency and repels a solution, a surfactant is added to the solution so that the contaminant or the used resist can be removed. This is preferable because the water repellency of the solution on the surface to be cleaned can be prevented.

The generation of active oxygen atoms O by the above-mentioned light irradiation can be carried out with a solution of a single component such as hydrogen peroxide solution or ozone water. However, the solution, especially hydrogen peroxide solution, contains choline or tetramethylammonium hydroxide. , The generation efficiency of active oxygen atoms O can be increased. Here, choline is (β-hydroxyethyl) trimethylammonium hydroxide, (CH ₃ ) ₃ N (O
H) CH ₂ CH ₂ OH, and tetramethyl ammonium hydroxide means (CH ₃ ) ₄ N (OH).
This choline or tetramethylammonium hydroxide can efficiently generate active oxygen atoms O from a solution on the object to be cleaned without leaving a metal component on the object to be cleaned.

Further, by adding HCl, H ₂ SO ₄ or NH ₄ OH to the above solution, in addition to the organic pollutants,
Cleaning of inorganic contaminants is also possible. Then, by adding a chelating agent to the above solution, metals such as Al and Fe, which are trace contaminant components, can be adsorbed and removed for cleaning. The addition of a chelating agent is also a preferable method for blocking metal ions dissolved in the solution and keeping the detergency of the solution high. Further, a thickener may be added to the solution in order to control the thickness of the solution on the surface to be cleaned to an appropriate value.

After the oxidation treatment of the contaminants and the used resist, pure water is generally used as a cleaning medium for cleaning the coating solution remaining on the surface to be cleaned and the substance to be oxidized. However, a solvent other than pure water may be used. In this case, since the amount of the coating solution remaining on the surface to be cleaned is small, the amount of the residue to be washed away is also small, so that when a cleaning medium such as an organic solvent or a mixture of pure water and an organic solvent is used, the cleaning is performed. Even if the amount of the medium used is very small, a desired rinsing effect can be obtained.

(Embodiment 2) FIG. 2 shows a schematic configuration of a cleaning apparatus of a different form used for carrying out the cleaning method according to the present invention. The main part of the apparatus shown in FIG. 1 includes a workpiece 1 and a mounting table 1 having a holding mechanism for holding the workpiece 1.
1. Lighting unit 3 serving as light irradiation means, solution supply unit 40
0, constituted by a cleaning medium supply unit 500.

The cleaning object 1 having a flat shape such as a semiconductor wafer is mounted on a mounting table 11 provided with a holding mechanism for holding the cleaning object 1 by suction, for example. Lighting unit 3
The same one as in Example 1 was used. Solution supply unit 400
The cleaning medium supply unit 500 is disposed above the surface to be cleaned, and has nozzles 410 and 510, respectively. The solution supply unit 400 is configured to inject hydrogen peroxide water, ozone water, or the like as a cleaning liquid for removing the used contaminants and / or used resist from the nozzle 410 onto the surface to be cleaned. The cleaning medium supply unit 500 injects pure water and / or an organic solvent as a cleaning medium from the nozzle 510 onto the surface to be cleaned.

The cleaning by the above device is performed as follows. First, the article to be cleaned 1 is mounted on the mounting table 11. A predetermined amount of a solution (hydrogen peroxide solution, ozone water, or the like) is sprayed from the nozzle 410 of the solution supply unit 400 onto the surface to be cleaned to form a coated body of the solution to be cleaned. At this time, the thickness of the solution applied to the surface to be cleaned was 3 μm as described in Example 1.
Since the thickness is preferably 300 μm, the position and angle of the nozzle 410, the solution injection amount, time and the like are appropriately adjusted. At this time, the position of the nozzle 410 is so arranged that the nozzle 410 does not block the light from the light source 31 applied to the object 1 to be cleaned. When the solution application by spraying is completed, the application surface on the surface to be cleaned is uniformly irradiated by the illumination unit 3 to oxidize the contaminants and the used resist as in the first embodiment.

After this oxidation treatment, pure water and / or an organic solvent is sprayed as a cleaning medium onto the object 1 to be cleaned from the nozzle 510 of the cleaning medium supply unit 500 located above the surface to be cleaned, so as to be cleaned. The coating solution and the substance to be oxidized remaining on the cleaning surface are cleaned. The position and angle of the nozzle 510, the injection amount of pure water, the time, and the like are appropriately adjusted. In addition, the position of the nozzle 510 is also arranged so that the light from the light source 31 irradiated to the object to be cleaned 1 is not blocked by the nozzle 510.

As described above, in the second embodiment, as in the first embodiment, a high cleaning effect can be obtained by efficiently using a small amount of active oxygen atoms O generated from a small amount of the cleaning liquid.

As described above, the representative embodiment of the present invention has been described. However, the present invention can be implemented in various embodiments other than those described above. For example, the cleaning solution may be a solution other than hydrogen peroxide solution or ozone water as long as it generates active oxygen atoms O by light irradiation.

The object to be cleaned is not limited to a semiconductor wafer, but can be applied to, for example, a liquid crystal substrate or a photomask surface, and also to optical components.

As is apparent from the above description, according to the present invention, a solution that generates active oxygen atoms when irradiated with light is applied to the surface of the object to be cleaned to form a coated body. By irradiating light to remove the resist and / or contaminants on the object to be cleaned, thereby greatly increasing the use efficiency of active oxygen atoms in the solution and increasing the efficiency with a small amount of solution. The cleaning effect and the used resist removing effect can be obtained, and the cleaning can be efficiently performed in a short time with a small-scale and simple apparatus configuration.

[Brief description of the drawings]

FIG. 1 is a schematic perspective view showing one embodiment of a cleaning apparatus according to the present invention.

FIG. 2 is a schematic perspective view showing a different embodiment of the cleaning apparatus according to the present invention.

[Description of Signs] 1 Object to be cleaned 2 Spinner device (rotation drive unit) 3 Illumination unit (light irradiation unit) 4 Solution supply unit 5 Cleaning medium supply unit

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) H01L 21/304 647 H01L 21/304 647B 647Z

Claims (23)

[Claims] A resist that generates active oxygen atoms when the surface of the object to be cleaned is irradiated with light to form a coated body; and the solution is irradiated with light to form a resist on the body to be cleaned. And / or a method for cleaning an object to be cleaned, which comprises removing contaminants. 2. The method for cleaning an object to be cleaned according to claim 1, wherein the thickness of the applied body of the solution generating the active oxygen atoms is 3 μm to 300 μm. 3. The method for cleaning an object to be cleaned according to claim 1, wherein the solution for generating active oxygen atoms is a hydrogen peroxide solution. 4. The method for cleaning an object to be cleaned according to claim 1, wherein the solution that generates active oxygen atoms is ozone water. 5. The method for cleaning an object to be cleaned according to claim 1, wherein a surfactant is added to the solution for generating active oxygen atoms. 6. The method for cleaning an object to be cleaned according to claim 1, wherein choline is added to the solution for generating active oxygen atoms. 7. The method for cleaning an object to be cleaned according to claim 1, wherein tetramethyl ammonium hydroxide is added to the solution for generating active oxygen atoms. 8. A solution for generating active oxygen atoms, wherein HC
The method for cleaning an object to be cleaned according to any one of claims 1 to 7, wherein 1 is added. 9. A solution for generating active oxygen atoms, wherein H ₂ is added to the solution.
The method of cleaning the cleaning object according to any one of claims 1 to 8, characterized in that the addition of SO _4. 10. The solution for generating active oxygen atoms contains N
8. The method for cleaning an object to be cleaned according to claim 1, wherein H ₄ OH is added. 11. A method according to claim 1, wherein a chelating agent is added to the solution for generating active oxygen atoms.
The method for cleaning an object to be cleaned according to any one of the above. 12. The method for cleaning an object to be cleaned according to claim 1, wherein a thickener is added to the solution for generating active oxygen atoms. 13. The cleaning of the object to be cleaned according to claim 1, wherein a spinner device is used when applying the solution for generating the active oxygen atoms to the surface of the object to be cleaned. Method. 14. The cleaning object according to claim 1, wherein a liquid ejecting apparatus is used when applying the solution for generating the active oxygen atoms to the surface of the cleaning object. Cleaning method. 15. The method for cleaning an object to be cleaned according to claim 1, wherein the solution for generating the active oxygen atoms is irradiated with light having a wavelength of 500 nm or less. 16. The method for cleaning an object to be cleaned according to claim 1, wherein the solution for generating active oxygen atoms is irradiated with light having a wavelength of 400 nm or less. 17. The cleaning method according to claim 1, wherein a cleaning process using pure water and / or an organic solvent is performed after the step of removing the resist and / or contaminants on the object to be cleaned. The method for cleaning an object to be cleaned according to any one of the above. 18. A coating apparatus for applying a solution that generates active oxygen atoms when light is irradiated to the surface of the object to be cleaned to form an application body, and a light irradiation apparatus for applying light to the solution. ,
An apparatus for cleaning an object to be cleaned, characterized by removing a resist and / or a contaminant on the object to be cleaned. 19. The apparatus for cleaning an object to be cleaned according to claim 18, wherein the thickness of the applied body of the solution for generating active oxygen atoms is 3 μm to 300 μm. 20. The apparatus for cleaning an object to be cleaned according to claim 18 or 19, wherein a spinner device is used when applying the solution for generating the active oxygen atoms to the surface of the object to be cleaned. 21. The apparatus for cleaning an object to be cleaned according to claim 18 or 19, wherein a liquid ejecting apparatus is used when applying the solution for generating the active oxygen atoms to the surface of the object to be cleaned. 22. The apparatus for cleaning an object to be cleaned according to claim 18, wherein the solution for generating active oxygen atoms is irradiated with light having a wavelength of 500 nm or less. 23. The apparatus for cleaning an object to be cleaned according to claim 18, wherein the solution for generating active oxygen atoms is irradiated with light having a wavelength of 400 nm or less.