JP2001189308A - Device and method for plasma treatment - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a parallel plate plasma treatment device, which can improve the in-plane uniformity of a film-forming speed by concentrically introducing a film forming gas to 8 spot, where the film forming speed is slow by changing the structures of gas supplying shower nozzles attached to an upper electrode, and to provide a method of plasma treatment. SOLUTION: The number of the reaction gas supplying shower nozzles, attached to the upper electrode 4 per unit area, is changed in the plane of a wafer 16. In this way, the in-plane uniformity of the film forming speed is improved by concentrically introducing the film-forming gas to the spot, where the film forming speed is slow. In addition, the opening areas of the nozzles are changed in the plane of the wafer 16. Consequently, the in-plane uniformity of the film forming speed is improved, by concentrically introducing the film forming gas by changing the flow rate of the introduced gas in the plane of the wafer 16. In addition, the film-forming speed and the quality of a formed film are improved, by decomposing the film forming gas having low dissociation efficiency by aggressively making the gas to stay in a high-density plasma by not only introducing the nozzles 13 perpendicularly to the wafer 16 placed on a lower electrode 8, but also obliquely to the wafer 16.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plasma processing apparatus for generating a plasma by applying a voltage between electrodes and performing necessary processing on a substrate to be processed using the plasma.
In particular, the present invention relates to a plasma CVD apparatus having a high dissociation efficiency of a reaction gas.

[0002]

2. Description of the Related Art Conventionally, in a wafer processing step for forming a semiconductor device, plasma processing using a plasma processing apparatus is one of important steps. In the processing using the plasma processing apparatus, for example, it is very important to improve the film forming rate and film quality in the CVD processing, the etching rate and the etching shape in the etching processing, and the uniformity thereof in the wafer surface. In a parallel plate type plasma processing apparatus, it is required to increase the density of plasma between upper and lower electrodes in order to increase processing efficiency. For that purpose, it is considered effective to increase the plasma confinement effect by the magnet and increase the trapping of ions and electrons between the electrodes by increasing the discharge frequency. actually,
Increasing the magnet strength from 120 Gauss to 320 Gauss and increasing the discharge frequency from 13.56 MHz to 6
It has been found that increasing to 0 MHz is effective for the efficiency of plasma processing. However, when applying a high frequency to the upper electrode and utilizing the assistance of a magnet, a region having a high plasma density on the surface of the upper electrode,
A concentrated "electron pool" is formed, and the plasma density distribution is remarkably biased between the parallel plate electrodes, and it is difficult to realize a uniform high-density plasma in the entire region between the electrodes.

FIG. 8 is a schematic sectional view of a conventional plasma processing apparatus. In the figure, the reaction chamber (chamber)
Has a vacuum exhaust port and is airtight. An upper electrode 104 is attached to the upper lid. A magnet (not shown) for magnetron discharge is provided on the side of the chamber. The upper electrode 104 has a disk-shaped shower nozzle having many small holes penetrating from the upper surface to the lower surface. A high-frequency power supply 101 for applying a high-frequency voltage to the upper electrode 104 is provided. The lower electrode 108
Supported by columns. The column is configured to be able to move up and down, so that the distance between the electrodes can be changed. On the lower electrode 108, there is provided an electrostatic chuck mechanism for chucking the substrate to be processed by electrostatic force in order to maintain heat conduction between the substrate to be processed 110 such as a silicon wafer and the substrate support. The lower electrode 108 is provided with a high frequency power supply 107 for applying a high frequency voltage. The supplied reaction gas is injected and supplied from the shower nozzle toward the substrate to be processed. High frequency power supply 101, 10
The reaction gas supplied into the chamber is converted into plasma by the high-frequency voltage applied from 7, and the surface of the substrate to be processed is plasma-processed by the plasma.

[0004]

In such a plasma processing apparatus of the type having ordinary parallel plate electrodes, a shower nozzle for supplying a gas to a reaction region introduces a gas in a direction perpendicular to a wafer. Therefore, when a source gas having a high dissociation energy is introduced from the upper electrode shower nozzle, the supplied gas is introduced in a direction perpendicular to the substrate to be processed, so that the gas stays in a region with a high plasma density around the upper electrode. The reaction time is limited and the reactive gas cannot be sufficiently dissociated. Therefore, a sufficient film forming rate and film quality cannot be obtained. That is, even if the density of the plasma is increased, the efficiency of the plasma processing may not be improved.

[0005] Further, in a parallel plate type plasma processing apparatus, it is considered that it is useful to reduce the interval between the electrodes in order to increase the density of plasma between the electrodes. However, when the distance between the electrodes is reduced, the exhaust performance differs between the central portion and the peripheral portion of the wafer, and a pressure difference occurs in the wafer surface, making it difficult to improve in-plane uniformity. Also, since the peripheral portion of the wafer corresponds to the peripheral portion of the lower electrode,
When the distance between the electrodes is reduced, the influence of non-uniformity of gas or plasma is apt to occur remarkably, and the non-uniformity of film formation at the peripheral portion of the wafer has hindered the improvement of the in-plane uniformity of the wafer. The present invention has been made under such circumstances, and the structure of the gas supply shower nozzle attached to the upper electrode has been changed to introduce a gas obliquely to improve the film formation rate and film quality. Provided are a parallel plate type plasma processing apparatus and a plasma processing method in which a film forming gas is intensively introduced into a place where a film speed is low, and an in-plane uniformity of a film forming speed can be improved.

[0006]

According to the present invention, in a parallel plate type plasma processing apparatus, the number of shower nozzles for supplying a reaction gas attached to an upper electrode per unit area is changed in a wafer surface. Is characterized in that the opening area of the shower nozzle is changed in the wafer surface and a part of the shower nozzle is inclined from the perpendicular to the wafer surface. By changing the number of shower nozzles per unit area in the opposing wafer surface, a film forming gas is intensively introduced to a place where the film forming speed is low, and the in-plane uniformity of the film forming speed is improved. . By changing the opening area of the shower nozzle in the opposing wafer surface, the gas introduction flow rate is changed in the surface, and the film forming gas is intensively introduced into a place where the film forming speed is low, so that the film forming speed is uniform in the surface. The performance is improved. In addition, by introducing the shower nozzle not only perpendicularly to the wafer but also obliquely, the gas with low dissociation efficiency stays actively in the high-density plasma in that region, and the gas is decomposed to improve the film formation speed and The film quality is improved.

That is, the plasma processing apparatus of the present invention
A lower electrode on which the substrate to be processed is mounted, an upper electrode disposed opposite to the lower electrode, and a plurality of upper electrodes attached to the upper electrode surface or the lower electrode surface and disposed opposite the lower electrode or the upper electrode. With a gas inlet, the number per unit area of the plurality of gas inlets varies depending on the in-plane position of the upper electrode, applying a voltage between the lower electrode and the upper electrode, Generates plasma,
A predetermined process is performed on the substrate to be processed using the plasma. At least one of the gas inlets may have an angle larger than 90 degrees or smaller than 90 degrees with respect to the substrate to be processed. Plasma may be generated between the lower electrode and the upper electrode using a magnetron discharge. The plasma may be subjected to a plasma CVD process. At least one high-frequency power source having a specific frequency may be connected to the upper electrode or the lower electrode. Two high frequency power supplies having different frequencies may be connected to the upper electrode or the lower electrode. Different high frequency power supplies may be connected to the upper electrode and the lower electrode.

The different high-frequency power supplies may have different frequencies. The lower electrode may have a mechanism for heating the substrate to be processed, a mechanism for heating and cooling, or a mechanism for cooling. The gas introduction flow rate of the gas introduction port may be different depending on the in-plane position of the upper electrode. In the plasma processing method of the present invention, a plasma CV
In the treatment method for performing the D treatment, SiF ₄ and O ₂ as source gases are contained in a reaction vessel containing the substrate to be treated.
Alternatively, SiF ₄ and O ₂ and SiH ₄ are supplied from a gas introduction nozzle, and discharge is excited in the reaction vessel to deposit an insulating film containing Si, 0, and F as main components on the substrate to be processed. It is characterized by:

[0009]

Embodiments of the present invention will be described below with reference to the drawings. First, referring to FIG. 1 and FIG.
An example will be described. FIG. 1 shows the plasma CVD of the present invention.
It is a typical schematic sectional view of an apparatus. In the figure, a reaction chamber (chamber) 11 has a vacuum exhaust port 6 so that airtightness can be maintained. Chamber 1
The upper cover 1 supports the upper electrode 4. Further, a magnet 5 for generating a magnetron discharge is provided on a side surface of the chamber. The upper electrode 4 has a disk-shaped shower nozzle having a large number of fine holes 3 penetrating from the upper surface to the lower surface. The upper electrode 4 is provided with a high-frequency power supply 1 for applying a high-frequency voltage. The lower electrode 8 is supported by a column 12, and the column is configured to be able to move up and down, so that the distance between the electrodes can be changed as appropriate. Also,
A cooling pipe and a heater 9 for circulating a coolant in order to keep the temperature constant are built in the lower electrode 8 installed on the upper part of the column 12.

On the lower electrode 8, an electrostatic chuck mechanism (not shown) for chucking the substrate 10 by electrostatic force to maintain heat conduction between the substrate 10 such as a silicon wafer and the substrate support. Is provided. The lower electrode 8 includes a high-frequency power supply 7 for applying a high-frequency voltage via the support 12. The upper electrode 4 is connected to the gas supply pipe 2, and the reaction gas supplied into the chamber 11 is jetted from the gas supply pipe 2 toward the substrate 10 through the minute holes 3 of the shower nozzle. FIG. 2 is an enlarged partial cross-sectional view of the small hole 3 of the shower nozzle shown in FIG. A detailed configuration including a shower nozzle in a space 11 'in the chamber between the lower electrode 8 and the upper electrode 4 is shown. As shown in FIG. 2, the gas supply shower nozzle 13
Uses a nozzle whose gas inflow angle is set at an arbitrary angle in the range of 0 ° to 180 °, instead of a nozzle that is directed perpendicularly to the wafer 16 that is the substrate to be processed, which is disposed oppositely. are doing. The number of gas supply nozzles 13 per unit area in the upper electrode surface and the amount of gas introduced from the nozzles are also arbitrarily set according to the position in the upper electrode surface (that is, in the opposed wafer surface). For example, it is possible to control the gas introduction amount by changing the opening area of the shower nozzle 13. FIG. 2 shows the shower nozzle 13.
This is an example in which the gas supply direction is constant, the number of gas nozzles per unit area in the surface of the upper electrode 4 is constant, and the amount of gas introduced from the gas nozzle is constant.

Next, the operation of the plasma processing apparatus will be described with reference to FIGS. More specifically, a description will be given of a plasma CVD film deposition for depositing a silicon oxide film (low dielectric constant film) containing fluorine (F) by this processing apparatus. First, the chamber 11 is evacuated to a vacuum through the exhaust port 6.
Next, the silicon wafer 16 as the substrate to be processed is placed on the support for the lower electrode 8 and heated to a desired processing temperature (370 ° C.) using the resistance heater 9, and then the gas is supplied from the shower nozzle 13 for gas supply. Fluorine-doped silicon oxide film (F: Si
A source gas for forming O ₂ ) is introduced. As source gas, SiF ₄ and O ₂ were respectively 20 sccm, 1
Then, discharge is performed at a pressure of 30 mTorr, and a fluorine-added SiO ₂ film is deposited by a plasma CVD method. The discharge is performed at 3000 W from the high frequency power supply 1 that applies a high frequency voltage to the upper electrode 4. At that time, in order to perform sputtering effectively, 300 W was output from the high frequency power supply 7 for applying a DC bias to the silicon wafer. A high frequency voltage having a frequency of 27.12 MHz was applied to the upper electrode 4, and a high frequency voltage having a frequency of 2 MHz was applied to the lower electrode 8. The strength of the magnet is 120 Gauss.

The plasma regions generated between the electrodes under the above conditions are a high-density plasma region 14 and a low-density plasma region 15 as shown in FIG. The high-density plasma region 14 is concentrated near the upper electrode 4, and the low-density plasma region 15 is formed near the silicon wafer 16. Here, since the gas inflow direction is not perpendicular but oblique to the facing surface of the wafer 16, the time during which the gas is exposed to the high-density region 14 before reaching the wafer 16 increases.
When the gas is introduced vertically to the wafer 16, the time that the gas is exposed to the high-density region 14 before reaching the wafer 16 is less than when the gas is introduced obliquely. Therefore, the effect of prolonging the time of exposure to the high-density region until reaching the wafer increases the dissociation efficiency of the SiF ₄ gas having a low dissociation efficiency, and the fluorine-added silicon oxide film is deposited efficiently. Thus, by changing the gas introduction direction according to the dissociation efficiency of the gas introduced into the chamber in the plasma, the wafer (low-density plasma region)
, The gas decomposition efficiency until the gas reaches the temperature is improved, and the film forming speed is improved. As a result of conducting an experiment under the above film formation conditions, a nozzle whose gas introduction direction is all perpendicular to the wafer was used,
Compared with the result of a conventional experiment performed under the same film forming conditions, 30
It was confirmed that the deposition rate was improved by about%.

Further, as a result of conducting an experiment under the above film forming conditions,
When the atomic composition ratio during the film formation was evaluated by X-ray fluorescence, a fluorine-added silicon oxide film (SiO ₂ ) was formed according to the stoichiometric composition. The fluorine (F) concentration is 12.0 atomic%.
FT-IR measurement one week after film formation of about
3800 cm −1 indicating that moisture was absorbed during film formation
No bonding peak of Si-OH and H-OH in the vicinity was observed. Considering the stability of the film from the viewpoint of hygroscopicity, it is considered to be a very stable fluorine-doped silicon oxide film. As described above, it is possible to obtain a sufficient deposition rate and film quality of the deposited film by the plasma CVD apparatus. In the conventional method, sufficient dissociation of the SiF ₄ gas is not performed, and when the atomic composition ratio in the film is evaluated by X-ray fluorescence, the excess Si exceeds the expected number of Si atoms in the case of a stoichiometric composition. There was an increase in the relative dielectric constant as compared with the SiO ₂ film which was present during the film formation and to which the same F concentration was added. FT-IR measurement was performed one week after the formation of a film having an F concentration of about 12.0 atomic%, and it was 3800 cm -1 indicating that moisture was absorbed during the film formation.
Near peaks of Si-OH and H-OH were observed.
Considering the stability of the film from the viewpoint of hygroscopicity, it is considered to be a very unstable film.

In addition, SiH ₄ and O ₂ gas or S
Similar effects were obtained with iF ₄ , O ₂ and SiH ₄ gas. It was also found that the application of a high-frequency voltage having a frequency different from the high-frequency voltage of the high-frequency power supply 1 to the upper electrode 4 further improved the film forming speed. It was also found that the film quality could be further improved by applying a high-frequency voltage having a frequency different from the high-frequency voltage of the high-frequency power supply 7 to the lower electrode 8.

Next, a second embodiment will be described with reference to FIG. FIG. 3 is an enlarged partial cross-sectional view of the small hole 3 of the shower nozzle shown in FIG. That is, the lower electrode 8
A detailed configuration including a shower nozzle in a space 11 'in the chamber between the upper electrode 4 and the upper electrode 4 is shown. As shown in FIG. 3, the gas supply shower nozzle 17 is not limited to a nozzle oriented in a vertical direction with respect to a silicon wafer 20 which is a substrate to be processed, which is disposed facing the gas supply nozzle 17, and is formed at an arbitrary angle from 0 °. A nozzle having a gas inflow angle set up to 180 ° is used. The number of gas supply nozzles 17 per unit area in the upper electrode surface and the amount of gas introduced from the nozzles are also arbitrarily set according to the position in the upper electrode surface (that is, in the opposed wafer surface). For example, it is possible to control the gas introduction amount by changing the opening area of the shower nozzle 17. In the embodiment shown in FIG.
The gas supply direction or the gas supply direction can be arbitrarily changed between the central portion and the peripheral portion of the upper electrode 4 by using the gas supply shower nozzle 17 attached to the upper electrode 4.

As in this embodiment, by changing the gas introduction direction or the gas supply direction according to the dissociation efficiency of the reaction gas introduced into the chamber in the plasma,
The decomposition efficiency of the gas until reaching the silicon wafer or the low-density plasma region 19 (the high-density plasma region 18 near the upper electrode) is improved, and the film forming speed is improved.

Next, a third embodiment will be described with reference to FIG. FIG. 4 is an enlarged partial cross-sectional view of the small hole 3 of the shower nozzle shown in FIG. That is, the lower electrode 8
A detailed configuration including a shower nozzle in a space 11 ′ in the chamber between the electrode and the upper electrode 4 is shown. As shown in FIG. 4, the gas supply shower nozzle 21 is oriented in a vertical direction with respect to a silicon wafer 24 which is a substrate to be processed, which is disposed opposite to the gas supply shower nozzle 21. The number varies depending on the location, and the opening area of the shower nozzle 21 varies depending on the location. A high-density plasma region 22 is formed near the upper electrode 4, and a low-density plasma region 23 is formed near the lower electrode 8 and the wafer 24. The gas introduction amount is controlled by changing the opening area of the shower nozzle 21. In order to increase the gas introduction amount, by increasing the number per unit area of the shower nozzle 21 or by increasing the size of the opening area of the shower nozzle 21 in the peripheral portion compared to the central portion of the upper electrode 4, Not only the film forming speed is improved, but also the distribution characteristics of the film forming speed over the entire surface of the silicon wafer 24 are improved, and the film forming speed is made uniform as compared with the case where a gas inlet having a conventional structure is used.

Next, a fourth embodiment will be described with reference to FIGS. 5 is a schematic schematic cross-sectional view of the plasma processing apparatus of the present invention and an enlarged cross-sectional view of a portion A of the cross-sectional view. FIG. 6 is a plan view of an upper electrode of the plasma processing apparatus provided with a shower nozzle. FIG. 3 is a plan view showing another example of the upper electrode of the plasma processing apparatus in which the shower nozzle is arranged, and an enlarged cross-sectional view of a portion B in the plan view. For example, as shown in FIG. 2, a high-density plasma region 14 is concentrated in the vicinity of the upper electrode 4 in a plasma region between the upper and lower electrodes generated by application of a high-frequency voltage to the reaction gas, and a region in the vicinity of the lower electrode 8 is , Low-density plasma state (15)
It has become. Although the high-density plasma region 14 is drawn to have a uniform thickness, in reality, the outer peripheral portion of the chamber has an exhaust port and the like, and the pressure is low, so that the plasma discharge efficiency is poor. 14 is
The periphery has a thin shape. In the plasma processing apparatus shown in FIG. 5, the distance between the upper electrode 44 and the lower electrode 48 at the outer peripheral portion is equal to the distance between the inner electrode and the lower electrode 48 corresponding to the shape of the high-density plasma processing region. It is shorter. That is, the surface of the upper electrode 44 facing the wafer 42 is concave at the center like a concave lens.

In FIG. 5A, a reaction chamber (chamber) is shown.
Has a vacuum exhaust port and is airtight. An upper electrode 44 is attached to the upper lid. A magnet (not shown) for magnetron discharge is provided on the side of the chamber. The upper electrode 44 has a disk-shaped shower nozzle having many small holes penetrating from the upper surface to the lower surface. A high-frequency power supply 41 for applying a high-frequency voltage to the upper electrode 44 is provided. The lower electrode 48 is supported by columns. The column is configured to be able to move up and down, so that the distance between the electrodes can be changed. The silicon wafer 42 is mounted on the lower electrode 48, and an electrostatic chuck mechanism for chucking the silicon wafer by electrostatic force is provided to maintain heat conduction with the substrate support. The lower electrode 48 is provided with a high frequency power supply 47 for applying a high frequency voltage. The supplied reaction gas is injected and supplied from the shower nozzle toward the substrate to be processed. The reaction gas supplied into the chamber is converted into plasma by the high-frequency voltage applied from the high-frequency power supplies 41 and 47, and the surface of the silicon wafer is plasma-processed by the plasma.

In a conventional plasma processing apparatus having a parallel plate electrode, a shower nozzle for supplying a gas to a reaction region introduces the gas in a direction perpendicular to the wafer, so that a source gas having a high dissociation energy is supplied. When the gas is introduced from the upper electrode shower nozzle, the supplied gas is introduced in a direction perpendicular to the wafer, so that the gas stays in a region with a high plasma density around the upper electrode for a limited time, resulting in a sufficient reaction. Gas cannot be dissociated. for that reason,
Sufficient film forming rate and film quality cannot be obtained. That is, even if the density of the plasma is increased, the efficiency of the plasma processing may not be improved. Further, in a parallel plate type plasma processing apparatus, it is considered that it is useful to reduce the interval between the electrodes in order to increase the density of plasma between the electrodes. However, when the distance between the electrodes is narrowed, the exhaust performance at the central portion and the peripheral portion of the wafer differ, and a pressure difference occurs in the wafer surface, and it is difficult to improve the in-plane uniformity. In addition, since the peripheral portion of the wafer corresponds to the peripheral portion of the lower electrode, if the distance between the electrodes is reduced, the influence of gas and plasma non-uniformity tends to be remarkable. Was hindering improvement.

Therefore, as shown in FIG. 5B, in this embodiment, in order to prolong the stay of the supplied reactant gas, the front end portion is not perpendicularly opposed to the wafer 42 and is perpendicular to the wafer 42. The shower nozzle 45 having an angle and the shower nozzle 43 vertically facing the wafer are used. At the periphery of the upper electrode 44, there is provided a shower nozzle 45 having an angle with respect to the perpendicular of the wafer whose tip is directed to the inside of the wafer 42, and a shower nozzle 43 vertically opposed to the wafer is provided inside the shower nozzle 45. ing. FIG.
FIG. 4 is a plan view of a surface of the upper electrode facing the wafer. The shower nozzles 43 and 45 are formed concentrically at equal intervals. Due to the arrangement of the shower nozzle, the high-density plasma region formed between the electrodes is uniformly and thickly formed in any region of the upper electrode. In this embodiment, as shown in FIG. 7, a more uniform high-density plasma region can be formed in consideration of the shape and arrangement of the shower nozzle.

This plasma processing apparatus has an upper electrode 54 having shower nozzles 51, 52 and 53, and a lower electrode 58 opposed thereto, for example, on which a silicon wafer 55 is placed. In order to increase the gas introduction amount, the peripheral portion of the upper electrode 54 increases the number per unit area of the shower nozzle 51, and also increases the opening area of the shower nozzle 51. The angle is arbitrarily changed between the central portion and the peripheral portion so that the supply direction is directed toward the inside of the upper electrode 4. The shower nozzle 53 at the center is substantially perpendicular to the wafer 55. As in this embodiment, by changing the gas introduction direction or the gas supply direction according to the dissociation efficiency of the reaction gas introduced into the chamber in the plasma,
The efficiency of gas decomposition until reaching the silicon wafer or the low-density plasma region is improved, and the film formation speed is improved. Increasing the number of shower nozzles per unit area and increasing the size of the opening area of the shower nozzle in the peripheral portion of the upper electrode compared to the central portion of the upper electrode not only improve the film forming speed but also improve the silicon wafer 55. The distribution characteristics of the film forming speed over the entire surface are improved, and the film forming speed is made uniform as compared with the case where the gas inlet having the conventional structure as shown in FIG. 8 is used.

As described in each of the embodiments, when the distance between the electrodes is reduced, the peripheral portion of the wafer suffers from non-uniformity of gas and plasma, so that the distribution characteristic of the film forming speed deteriorates. Therefore, in the peripheral portion of the upper electrode, the gas introduction direction angle is increased, the number of shower nozzles per unit area is increased, the opening area of the shower nozzle is increased, and the gas introduction flow rate is increased to increase the 8 inch diameter. When the film was formed on the silicon wafer of No. 5, the dispersion of the in-plane film formation rate was 5 as a deviation, but was improved to 2. In addition, F
The concentration can be controlled to 12.0 atomic% in the central part and the peripheral part of the silicon wafer, and the variation in the quality of the film formed in the plane is reduced.

[0024]

According to the present invention, the number of shower nozzles per unit area of the upper electrode is changed in-plane by the above-described structure, thereby introducing a film-forming gas intensively at a low film-forming speed. By changing the opening area of the shower nozzle in the plane, the gas introduction flow rate can be changed in the plane, and the film forming gas can be intensively introduced to a place where the film forming speed is low. By introducing not only vertically but also obliquely to the gas, the gas with low dissociation efficiency can actively stay in the high-density plasma and the gas can be decomposed.
It is possible to improve the film forming speed and the film quality, and to improve the distribution characteristics of the silicon wafer over the entire surface.

[Brief description of the drawings]

FIG. 1 is a schematic cross-sectional view schematically illustrating a plasma CVD apparatus of the present invention.

FIG. 2 is an enlarged partial cross-sectional view of a small hole 3 of the shower nozzle shown in FIG.

FIG. 3 is an enlarged partial cross-sectional view of a small hole 3 of the shower nozzle shown in FIG. 1;

FIG. 4 is an enlarged partial cross-sectional view of a small hole 3 of the shower nozzle shown in FIG.

FIG. 5 is a schematic schematic cross-sectional view of the plasma processing apparatus of the present invention and an enlarged cross-sectional view of a portion A in the cross-sectional view.

FIG. 6 is a plan view of an upper electrode of the plasma processing apparatus provided with the shower nozzle of the present invention.

FIG. 7 is a plan view showing another example of the upper electrode of the plasma processing apparatus provided with the shower nozzle of the present invention, and an enlarged cross-sectional view of a portion B in this plan view.

FIG. 8 is a schematic sectional view of a conventional plasma processing apparatus.

[Explanation of symbols]

1, 7, 41, 47, 101, 107: high frequency power supply, 2: gas supply pipe, 3: micro hole,
4, 44, 54, 104 ... upper electrode, 5 ...
Magnet, 6 ... exhaust port, 8, 48, 58, 108
..Lower electrodes, 9, heaters, 10, 16, 2
0, 24, 42, 55, 110 ... wafer (substrate to be processed), 11 ... reaction chamber (chamber), 11 '...
・ Chamber space, 12 ・ ・ ・ Struts, 13, 17,
43, 45, 51, 52, 53 ... shower nozzle,
14, 18, 22 ... high-density plasma region, 15, 1
9, 23 ... low density plasma region.

 ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 4K030 AA04 AA06 AA14 BA44 CA04 CA12 EA05 FA01 KA17 KA23 KA26 KA30 LA02 5F045 AA08 AB31 AC01 AC02 AC11 AD07 AE17 AF03 BB02 BB09 DP03 EE12 EE17 EE20 EEFH EF05 E07E05E07 EJ05 EJ09 EM05

Claims (11)

[Claims] A lower electrode on which a substrate to be processed is placed; an upper electrode facing the lower electrode; a lower electrode attached to the upper electrode surface or the lower electrode surface, facing the lower electrode or the upper electrode. A plurality of gas inlets arranged, the number of the plurality of gas inlets per unit area varies depending on the in-plane position of the upper electrode, and a voltage between the lower electrode and the upper electrode. , A plasma is generated, and a predetermined process is performed on the substrate to be processed using the plasma. 2. The apparatus according to claim 1, wherein at least one of the gas introduction ports has an angle larger than 90 degrees or smaller than 90 degrees with respect to the substrate to be processed.
3. The plasma processing apparatus according to 1. 3. The plasma processing apparatus according to claim 1, wherein a plasma is generated between the lower electrode and the upper electrode using a magnetron discharge. 4. The plasma processing apparatus according to claim 3, wherein the plasma is subjected to a plasma CVD process. 5. The plasma processing apparatus according to claim 1, wherein at least one high-frequency power source having a specific frequency is connected to the upper electrode or the lower electrode. . 6. The plasma processing apparatus according to claim 1, wherein two high frequency power supplies having different frequencies are connected to the upper electrode or the lower electrode. 7. The plasma processing apparatus according to claim 1, wherein different high-frequency power supplies are connected to the upper electrode and the lower electrode. 8. The plasma processing apparatus according to claim 7, wherein the different high frequency power supplies have different frequencies. 9. The plasma processing apparatus according to claim 1, wherein the lower electrode has a mechanism for heating, a mechanism for heating and cooling, or a mechanism for cooling the mounted substrate to be processed. . 10. The plasma processing apparatus according to claim 1, wherein a gas introduction flow rate of the gas introduction port differs according to an in-plane position of the upper electrode. 11. The plasma processing apparatus according to claim 4, wherein the reaction container in which the substrate to be processed is accommodated includes:
SiF ₄ and O ₂ or SiF ₄ and O ₂ as source gases
And SiH ₄ are supplied from a gas introduction nozzle, and discharge is excited in the reaction vessel, so that Si,
A plasma processing method comprising depositing an insulating film containing 0 and F as main components.