JP2001181849A - Method of ecr protective film deposition, and ecr film deposition system - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an ECR(electron coupling resonance) film deposition system capable of forming a protective film by means of ECR sputtering and ECR plasma enhanced CVD selectively or simultaneously. SOLUTION: In a reaction chamber 10, a substrate S is provided in such a way that bias voltage by a bias power source 11 can be applied to it and also a sputtering target 20 is disposed in close vicinity to a plasma window 12a. A material gas for CVD film deposition and a material gas for sputtering film deposition can be supplied into a plasma chamber 12 by gas feeding deices 14A and 14B, respectively. As a result, an ECR protective film using only the material gas for CVD film deposition or only the material gas for sputtering film deposition can be formed, and further, a protective film having properties intermediate between the properties of the ECR plasma enhanced CVD protective film and those of the ECR sputtering protective film can also be formed.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

TECHNICAL FIELD OF THE INVENTION

The present invention relates to a method and a device for forming an ECR protective film using an ECR sputtering method or an ECR plasma CVD method.

[0002]

2. Description of the Related Art In a magnetic recording medium such as a hard disk, a magneto-optical recording medium, and a magnetic head, a protective film is formed on a surface for protection from an external environment. Generally, a carbon-based thin film is used for this protective film, and a sputtering method has been conventionally used for forming the protective film. In recent years, instead of this sputtering method, a plasma CVD method of forming a diamond-like carbon thin film (DLC film), which is a kind of carbon-based thin film, using a hydrocarbon gas (for example, E-CVD)
Attention has been paid to CR plasma CVD.

When a DLC film is formed by a plasma CVD method, a hydrocarbon gas is introduced into a vacuum chamber to generate plasma by discharge, and positive ions in the plasma are attracted onto a substrate to form the DLC film. . The positive ions attracted onto the substrate include H generated by the dissociation of hydrocarbons.
⁺ , C ⁺ , CH ⁺ , CH ₂ ⁺ and the like. At this time, DCL
Part of the hydrogen component in the film is released from the film into a vacuum due to ion bombardment during continuous film formation, but the hydrogen component remains in the finally obtained DCL film. Inevitable.

[0004] By the way, the plasma CVD method has an advantage that the film formation rate is faster than the sputtering method. However, since the film formation process is as described above, there is a problem that the hydrogen content in the DCL film increases. Was. Hydrogen incorporated in the film has a property of exiting the film with the passage of time, and changes in film quality due to such a change in hydrogen content over time, for example, film thickness and film characteristics (abrasion resistance, corrosion resistance, etc.) However, there is a drawback that changes such as these tend to occur.

On the other hand, in a carbon-based thin film formed by a sputtering method, hydrogen is hardly contained in the film.
There is a disadvantage that the film forming speed is slower than the VD method. As described above, each of the sputtering method and the plasma CVD method has advantages and disadvantages. Depending on the protective film to be formed, these film formation methods can be used properly,
It is necessary to devise a technique such as forming a protective film using two types of films obtained by the respective film forming methods.

[0006]

[Problems to be solved by the invention]

However, the above two types of protective films (a protective film by a sputtering method and a protective film by a plasma CVD method)
Are formed by different film forming apparatuses, respectively. For example, a carbon-based thin film formed by a sputtering method is formed by using an ECR sputtering apparatus, and a DL formed by a plasma CVD method.
The C film is formed using an ECR-CVD device. Therefore, when two types of protective films are formed on a substrate, both an ECR sputtering device and an ECR-CVD device are required. In addition, when forming a film, if a protective film is formed on one device, the substrate must be taken out of that device and then loaded into the other device to form the other protective film. In addition, there is a problem that the time required for forming the protective film becomes long.

When a protective film is formed on a magnetic disk, it is necessary to form a protective film on both surfaces of the disk.
An R sputtering apparatus (for example, an apparatus disclosed in Japanese Patent Application Laid-Open No. Hei 6-200373) has a problem that a protective film cannot be simultaneously formed on both surfaces of a disk. For this reason, conventionally, disks were formed one by one, but in recent years, the number of processed sheets per hour has to be about 1000, and a large amount of processing has to be performed. There is a problem that it cannot be done.

An object of the present invention is to provide an ECR protective film forming method and an ECR film forming apparatus capable of forming a protective film by selectively or simultaneously using an ECR sputtering method and an ECR plasma CVD method. .

[0009]

[Means for Solving the Problems]

An embodiment of the present invention will be described with reference to FIGS. 2, 5, 6, and 8. FIG. (1) Referring to FIGS. 2 and 6, the method of forming an ECR protective film according to the present invention is such that a CVD film forming gas is brought into a plasma state by an ECR discharge, and an ECR is formed on a substrate S in the plasma atmosphere. -After forming the CVD protective film 30, the sputtering film forming gas is turned into a plasma state by ECR discharge, and the sputtering target 2 is
The above object is attained by sputtering 0 and depositing target particles emitted by the sputtering on the ECR-CVD protective film 30 to form an ECR sputter protective film 31. (2) Referring to FIG. 5, in the method of forming an ECR protective film according to the second aspect of the present invention, a mixed gas comprising a CVD film-forming gas and a sputter film-forming gas is brought into a plasma state by ECR discharge. , Ions in the plasma P3 (C ⁺ ,
CH ^{+ and the} like are deposited on the substrate S to which the bias voltage is applied, and the target particles C emitted by sputtering the sputtering target 20 with plasma particles (Ar ^{+ and the} like) are deposited and protected on the substrate S. The above object is achieved by forming a film. (3) In accordance with FIG. 2, the invention of claim 3 generates ECR plasma by using a microwave from a microwave source 17 and a magnetic field by a magnetic field generator 15, and uses the ECR plasma to generate ECR plasma. Applied to an ECR film forming apparatus for forming a film, a chamber 10 in which a substrate S is disposed, plasma generating mechanisms 12, 15 to 18 for generating ECR plasma, and ECR generated by the plasma generating mechanisms 12, 15 to 18 A sputtering target 20 that is sputtered by plasma;
The apparatus includes a CVD gas supply device 14A that supplies a CVD film forming gas to the plasma generating mechanisms 12, 15 to 18, and a sputter gas supply device 14B that supplies a sputter film forming gas to the plasma generating mechanisms 12, 15 to 18. Achieve the above objectives. (4) Explained in connection with FIG. 8, the invention of claim 4 generates ECR plasma by the microwave from the microwave source 17 and the magnetic field by the magnetic field generator 15, and forms a film using the ECR plasma. And a chamber 41 in which the substrate S is disposed, and provided so as to face each other with the chamber 41 interposed therebetween.
Two plasma generating mechanisms 15 to 1 for generating R plasma
8, 42A, 42B and plasma generation mechanisms 15-18,
Two sputtering targets 20 provided corresponding to each of 42A and 42B, and plasma generation mechanisms 15 to
The above-mentioned object is achieved by providing a gas supply device 14B for supplying a gas for film formation by sputtering to 18, 42A and 42B.

In the section of the means for solving the above-mentioned problems, which explains the configuration of the present invention, the drawings of the embodiments of the present invention are used in order to make the present invention easy to understand. However, the present invention is not limited to the embodiment.

[0011]

BEST MODE FOR CARRYING OUT THE INVENTION

Hereinafter, an embodiment of the present invention will be described with reference to FIGS. First Embodiment FIG. 1 is a schematic diagram of a film forming system 1 used for manufacturing a magnetic disk.
A CR film forming apparatus is applied. The process of forming a magnetic disk consists of a process of forming an underlayer on a substrate made of glass or aluminum, a process of forming a magnetic recording layer on the underlayer, and a process of forming a protective film on the magnetic recording layer. Become. The film forming system 1 of FIG. 1 has three kinds of film forming apparatuses 1A, 1B, 1
C is provided in a series, and an underlayer is formed on the substrate S introduced into the film forming system 1 by the film forming apparatus 1A, and a magnetic recording layer is formed by the subsequent film forming apparatus 1B. The underlayer and the magnetic recording layer are formed by a sputtering method.

An ECR film forming apparatus according to the present invention is used as the last film forming apparatus 1C. If a protective film is formed by the ECR film forming apparatus 1C, the substrate S is taken out of the film forming system 1 and the next step is performed. Transported to the step. Each of the film forming apparatuses 1A, 1B, and 1C is connected by a transport unit 1D. For example, 100
If the film forming system has a processing capacity of 0 wafers / hour,
The substrate S is introduced into the film forming system 1 every 3.6 seconds.

Next, the ECR film forming apparatus 1 C will be described in detail with reference to FIG. A bias power supply 11 is connected to the substrate S loaded in the reaction chamber 10 where the film forming reaction is performed via a switch 24. When the switch 24 is turned on, a negative bias voltage (for example, a DC pulse voltage) is applied to the substrate S. ) Is applied. The substrate S is held by a substrate holder (not shown). Reference numeral 12 denotes a plasma chamber in which ECR plasma is generated, and gas supply devices 14A and 14B are connected via mass flow controllers 13A and 13B. Hydrocarbon gas (ethylene (C ₂ H ₄ ) gas, methane (CH ₄ ) gas, etc.) which is a CVD film forming gas is supplied from the gas supply device 14A, and sputter film formation gas is supplied from the gas supply device 14B. A certain argon (Ar) gas is supplied. Note that FIG.
In the apparatus described above, the film forming gas was introduced into the plasma chamber 12,
Since the plasma chamber 12 communicates with the reaction chamber 10 via a plasma window 12a described later, a film forming gas may be introduced into the reaction chamber 10.

In the plasma chamber 12, a magnetic field generating coil 15 is provided so as to surround the plasma chamber 12, and a microwave source 17 is connected via a waveguide 16. Microwave source 1
The microwave generated in 7 is guided to the quartz window 18 of the plasma chamber 12 through the waveguide 16, and is introduced into the plasma chamber 12 through the quartz window 18. At the time of film formation, the gas is supplied from the gas supply devices 14A and 14B and evacuated by the vacuum exhaust device 19 such as a turbo molecular pump.
0.1 Pa). Further, the microwave of 2.45 GHz generated by the microwave source 17 is applied to the plasma chamber 12.
And a magnetic flux density 8 that satisfies ECR conditions.
By forming a magnetic field of 7.5 mT in the plasma chamber 12 by the coil 15, active ECR by ECR discharge
Plasma is generated in the plasma chamber 12.

In the ECR plasma, Ar gas and hydrocarbon gas are excited to be in a plasma state, and the ECR plasma is supplied from a plasma window 12 a provided in the plasma chamber 12 to the reaction chamber 10 along a divergent magnetic field generated by the coil 15. Pulled out within. In the reaction chamber 10, a ring-shaped or cylindrical target 20 is provided so as to be close to and surround the plasma window 12a. The target 20 is held by a target holder 21, and a negative target voltage is applied by a power supply 22. This target voltage is applied to switch 23
Can be turned on and off.

The ECR film forming apparatus shown in FIG. 2 is capable of three types of operation modes. First, a gas supply device 14 is provided in the plasma chamber 12.
Supplying only hydrocarbon gas from A, ECR plasma C
This is an operation mode in which a DLC film is formed on the substrate S by VD (hereinafter, referred to as a CVD mode). In this case, the application of the target voltage to the target 20 is turned off. In the second operation mode, only the Ar gas from the gas supply device 14B is supplied to the plasma chamber 12 and the target 2 is supplied with the target voltage by the generated plasma.
0, and the sputtered target particles are deposited on the substrate S to form a film (hereinafter, referred to as an operation mode).
(Referred to as a sputtering mode). The third operation mode is an operation mode in which CVD film formation and sputter film formation are performed simultaneously (hereinafter, referred to as a mixed mode).

In FIG. 2, reference numeral 25 denotes a controller for controlling the entire apparatus, and a switch 26 a provided in the controller 25.
The device can be operated in any of the three operation modes by the operations of to 26c. That is, the switch 26a
When the switch 26b is turned on, it operates in the CVD mode, when the switch 26b is turned on, it operates in the sputtering mode, and when the switch 26c is turned on, it operates in the mixed mode.

FIG. 3 is a diagram for explaining the CVD mode. As described above, only the hydrocarbon (C _x H _y ) gas is supplied from the gas supply device 14 A into the plasma chamber 12. In the plasma P1, the hydrocarbon gas is ionized to be in a plasma state, and the plasma P1 moves from the plasma window 12a provided in the plasma chamber 12 into the reaction chamber 10 along the divergent magnetic field generated by the coil 15. A negative bias voltage is applied to the substrate S by the bias power supply 11, and the positive ions (H ⁺ , C ⁺ , CH ⁺ ,
CH ₂ ⁺ ) on the substrate S to form a DLC film. At this time, part of the hydrogen in the DCL film is released from the film into a vacuum due to the ion bombardment during the continuous film formation. In this CVD mode, the switch 23 is turned off, and the target voltage (negative voltage) from the power supply 22 is not applied to the target 20. Therefore, sputtering of the target 20 by the ions in the plasma P1 hardly occurs.

FIG. 4 is a diagram for explaining the sputtering mode.
In the plasma chamber 12, A from the gas supply device 14B
Only r gas is supplied. In the sputter mode,
Turn on the switch 23 to target the target 20
Apply voltage and turn off switch 24 to
The application of the bias voltage to the plate S is released. Plasma chamber 12
Ar gas is excited by ECR discharge inside the plasma
P2 occurs. Plasma P2 is the divergent magnetic field of coil 15.
Is drawn into the reaction chamber 10 by the plasma window 12a.
Ions in the plasma P2 (A
r ⁺) Is pulled to the target 20 by the negative target voltage.
And the inner peripheral surface 20a of the target 20 is sputtered.
Ring. The inner peripheral surface 20a is spa
When the target is made, the target is made of carbon
From 20, carbon particles C are beaten out. This hammered out
The carbon particles C are deposited on the substrate S provided in the reaction chamber 10.
Then, a carbon film is formed on the surface of the substrate S.

FIG. 5 is a diagram illustrating the mixed mode. In the mixing mode, gas is supplied from both of the gas supply devices 14A and 14B into the plasma chamber 12, and the plasma chamber 12 is mixed with a hydrocarbon gas for CVD film formation and an argon gas (Ar) for sputter film formation. It has a gas atmosphere. for that reason,
In the plasma P3 generated by the ECR discharge, ions generated by dissociation of hydrocarbons and argon ions (Ar ⁺ )
And are included. In the case of the mixed mode, the switches 23 and 24 are turned on, and the target voltage to the target 20 and the bias voltage to the substrate S are applied.

In the mixed mode, Ar ⁺ , H ⁺ , C ⁺ , C
Since H ⁺ , CH ₂ ^{+, and the} like are included as positive ions, the plasma P3 extracted near the target 20
The positive ions therein are attracted to the target 20 by the negative target voltage, and the inner peripheral surface 20a of the target 20
Is sputtered. The carbon particles C struck out of the target 20 by sputtering are deposited on the surface of the substrate S. Further, positive ions (Ar ⁺ , H ⁺ , C ⁺ , CH ⁺ , CH ₂ ^+, etc.) in the plasma P3 extracted to the vicinity of the substrate S by the diverging magnetic field of the coil 15 are applied to the substrate surface by the bias voltage of the substrate S. Attracted substrate S
Deposit on top.

As described above, in the mixed mode, the sputtering film formation using the target 20 and the CVD film formation using the hydrocarbon gas are simultaneously performed. Therefore, in the mixed mode, the film forming speed is improved as compared with the case where the protective film is formed only by the sputtering method. Further, the protective film obtained by the mixed mode has an advantage that the hydrogen concentration in the film is lower than that of the DLC film obtained only by the plasma CVD method. further,
In the process of CVD film formation, hydrogen is released from the film due to ion bombardment during film formation as in the case of conventional CVD film formation. However, in the mixed mode, H ⁺ , C ⁺ , CH ⁺ , CH ₂ ^{+ and the} like are released. Also, argon ions (Ar ⁺ ) having a large mass number collide with the substrate S. Therefore, the ion bombardment is increased and hydrogen is more actively released from the film, and the hydrogen concentration in the protective film is reduced. Note that by adjusting the concentration of each film forming gas in the mixed gas, the bias voltage, and the like, the ratio of film formation by a sputtering method to film formation by a plasma CVD method can be adjusted.

As described above, in the ECR film forming apparatus 1 C of the present embodiment, the ECR sputter protection film and the ECR-CVD protection film are selectively formed by a single film forming apparatus by changing the operation mode. be able to. Further, by operating in the mixed mode, a film having an intermediate property between a film obtained by a sputtering method and a film obtained by a plasma CVD method can be formed at a higher film formation rate.

Further, a protective film having a two-layer structure as shown in FIG. 6 can be formed by the film forming apparatus 1 C alone. That is, first C
The DLC film 30 is formed on the substrate S in the VD mode, and then the operation mode is switched to the sputtering mode to form the carbon film 31 on the DLC film 30. As described above, by forming the carbon film containing almost no hydrogen on the DLC film 30 having a high film forming rate by the sputtering method, the desorption of hydrogen from the DLC film 30 can be prevented and the change with time is small. A protective film can be formed. At this time, if most of the thickness of the protective film is made to be the thickness of the DLC film 30, C
The film formation speed can be set to be substantially the same as the case where the film is formed only by the VD method. Note that instead of forming the DLC film 30 in the CVD mode, the first layer may be formed in the mixed mode.

Second Embodiment FIG. 7 is a view showing a second embodiment of the ECR film forming apparatus according to the present invention, and the same parts as those in FIG. 2 are denoted by the same reference numerals. In the ECR film forming apparatus 40 shown in FIG. 7, two plasma chambers 42A and 42B are provided so as to sandwich the reaction chamber 41. Each of the plasma chambers 42A and 42B communicates with the reaction chamber 41 through a plasma window 43, respectively.
The film forming gases from the gas supply devices 14A and 14B are supplied to the reaction chamber 41. In the reaction chamber 41, targets 20 for sputtering film formation are provided so as to be close to the left and right plasma windows 43, respectively. A target voltage is applied to each target 20 by a common power supply 22 via a target holder 21. Left and right plasma chambers 4
A coil 15 is provided in each of the plasma chambers 2A and 42B in the same manner as the plasma chamber 12 shown in FIG.
2B. In FIG. 7, the controller 25 (see FIG. 2) for controlling the entire apparatus is omitted.

In this film forming apparatus 40, a protective film can be simultaneously formed on both the front and back surfaces of the substrate S.
5 are simultaneously driven to form a diverging magnetic field of a mirror magnetic field on the substrate S, and microwaves are introduced into the plasma chambers 42A and 42B to generate ECR plasma. At this time, the substrate S
In order to obtain a uniform ion flux density distribution in the vicinity, the ECR in the plasma chambers 42A and 42B is required.
While satisfying the conditions, the current applied to the coil 15 is controlled to adjust the magnetic field distribution so that the plasma spreads appropriately.

In the case of the film forming apparatus 40 as well, the combination of the gas supplied to the reaction chamber 41, the bias voltage of the substrate S, and the on / off of the application of the target voltage of the target 20, as in the case of the first embodiment. Operation modes (CVD mode,
(Sputter mode, mixed mode)
The same effect as in the first embodiment can be obtained. Further, since the protective film can be simultaneously formed on the front and back surfaces of the substrate S in the film forming apparatus 40, for example, in the case of a magnetic disk or the like where it is necessary to form the protective film on both front and back surfaces of the substrate S, the protective film is formed. The required time can be reduced as compared with the conventional case.
In addition, when the film was formed on each side, a slight difference in the film forming conditions caused a difference in film quality between the front and back protective films.
If 0 is used, such inconvenience does not occur.

FIG. 8 is a view showing a modification of the film forming apparatus 40 of FIG. 7, and the same parts as those of the film forming apparatus 40 are denoted by the same reference numerals. In the film forming apparatus 40 shown in FIG. 7, a film could be formed by two kinds of film forming methods, a sputtering method and a CVD method.
Is an ECR configured to perform only the sputtering method
It is a film forming apparatus. That is, an argon (Ar) gas is supplied from the gas supply device 14B to the reaction chamber 41, and the target 20 is sputtered with argon ions excited by the ECR discharge. Deposited on both front and back surfaces to form a carbon film. In this case, a bias voltage may be applied to the substrate S or may not be applied as shown in FIG.

As described above, the conventional ECR sputtering apparatus can form a film only on one side of a substrate, and thus, in the case of a substrate such as a magnetic disk, the film is formed on each side. Therefore, it is becoming impossible to cope with the high-speed film formation. However, according to the film-forming apparatus of the present embodiment, it is possible to sufficiently cope with the high-speed film formation since both sides can be formed by sputtering at the same time.

In the above description of the film forming apparatuses 1 C, 40, and 50, a carbon-based protective film has been described as an example of a film to be formed, but the present invention can be applied to the formation of other films. For example, it can be used as a film forming apparatus 1B of the film forming system 1 shown in FIG. 1, that is, an apparatus for forming a magnetic recording layer by sputtering. In this case, when forming a Co—Cr film as the magnetic recording layer, an alloy of Co and Cr is used as the target 20. Further, the film forming apparatuses 1B and 1C may be combined into one film forming apparatus 40. That is, after forming the magnetic recording layer in the sputtering mode, the mode is switched to the CVD mode to form the DLC film. Further, the carbon-based protective film may be formed using a mixed mode instead of the CVD mode. Also, various types of supply gas are used depending on the film to be formed, and for example, H gas, N ₂ gas, or the like is used.

In the correspondence between the embodiment described above and the elements of the claims, hydrocarbon gas is gas for CVD film formation, argon gas is gas for sputter film formation, and the reaction chambers 10 and 4
Reference numeral 1 denotes a chamber, and the plasma chamber 12, the coil 15, the waveguide 16, the microwave source 17, and the plasma window 18 constitute a plasma generation mechanism.

[0032]

【The invention's effect】

As described above, according to the first aspect of the present invention, the ECR
-Since an ECR sputter protective film having a very small amount of hydrogen is formed on the CVD protective film, the ECR-CVD
According to the second aspect of the present invention, film formation by ECR sputtering and film formation by ECR plasma CVD can be simultaneously performed. A protective film having an intermediate property between a protective film formed by ECR sputtering and a protective film formed by ECR plasma CVD can be formed. As a result, it is possible to form a protective film with a small amount of hydrogen component and little change over time. According to the third aspect of the present invention, a single film-forming apparatus can be used
A protective film formed by the R sputtering method and a protective film formed by the ECR plasma CVD method can be formed, and a multilayer film combining these protective films can be easily formed. Furthermore, film formation by ECR sputtering and ECR plasma C
Film formation by the VD method can be performed at the same time.
A protective film having an intermediate property between the CVD protective film and the ECR sputter protective film can be formed. According to the fourth aspect of the present invention, the formation of the protective film by the ECR sputtering method can be simultaneously performed on both the front and back surfaces of the substrate, and the film formation time can be reduced.

[Brief description of the drawings]

FIG. 1 is a schematic diagram of a film forming system for manufacturing a magnetic disk.

FIG. 2 is a view showing one embodiment of an ECR film forming apparatus according to the present invention, and is a schematic configuration diagram of an ECR film forming apparatus 1C.

FIG. 3 is a diagram illustrating a CVD mode.

FIG. 4 is a diagram illustrating a sputtering mode.

FIG. 5 is a diagram illustrating a mixed mode.

FIG. 6 is a cross-sectional view of a substrate S on which a protective film having a two-layer structure is formed.

FIG. 7 is a view showing a second embodiment of the ECR film forming apparatus according to the present invention.

8 is a diagram showing a modification of the film forming apparatus 40 of FIG.

DESCRIPTION OF SYMBOLS 1 Film forming system 1A to 1C Film forming apparatus 10, 41 Reaction chamber 11 Bias power supply 12, 42A, 42B Plasma chamber 13A, 13B Mass flow controller 14A, 14B Gas supply device 15 Magnetic field generating coil 16 Waveguide 17 Microwave source 18 Quartz window 20 Target 23, 24 Switch C Carbon particle P1-P3 Plasma S Substrate

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) G11B 5/84 G11B 5/84 B 11/105 546 11/105 546F F-term (Reference) 4K029 BA34 BD11 CA05 CA13 DC05 DC48 4K030 AA09 BA28 FA02 KA20 KA30 LA20 5D075 EE03 FG04 GG03 GG12 GG16 5D111 GG14 JJ05 KK07 KK08 5D112 AA07 AA24 BC05 FA04 FA10 FB21 FB29

Claims (4)

[Claims] A gas for CVD film formation is made into a plasma state by ECR discharge, and an EC is formed on a substrate in the plasma atmosphere.
After the formation of the R-CVD protective film, the sputtering film forming gas is made into a plasma state by ECR discharge, the sputtering target is sputtered by the plasma, and the target particles released by the sputtering are subjected to the E sputtering.
A method for forming an ECR protective film, comprising forming an ECR sputter protective film by depositing on an CR-CVD protective film. 2. A mixed gas consisting of a CVD film-forming gas and a sputter film-forming gas is made into a plasma state by ECR discharge, and ions in the plasma are deposited on a substrate to which a bias voltage is applied, while plasma ions are used. A method for forming an ECR protective film, wherein target particles emitted by sputtering a sputtering target are deposited on the substrate to form a protective film. 3. An ECR plasma is generated by a microwave from a microwave source and a magnetic field from a magnetic field generator,
In an ECR film forming apparatus for forming a film using the ECR plasma, a chamber in which a substrate is provided, a plasma generating mechanism for generating the ECR plasma, and sputtering performed by the ECR plasma generated by the plasma generating mechanism And a C for supplying a CVD film forming gas to the plasma generating mechanism.
An EC comprising: a VD gas supply device; and a sputter gas supply device for supplying a sputter deposition gas to the plasma generation mechanism.
R film forming device. 4. An ECR plasma is generated by a microwave from a microwave source and a magnetic field from a magnetic field generator,
In an ECR film forming apparatus for forming a film using the ECR plasma, a chamber in which a substrate is provided and a chamber are provided so as to face each other with the chamber interposed therebetween.
Two plasma generating mechanisms for generating the ECR plasma; two sputtering targets provided for each of the plasma generating mechanisms; and a gas supply device for supplying a sputter deposition gas to the plasma generating mechanism. An ECR film forming apparatus comprising: