JP2001144225A - Electronic part module - Google Patents
Electronic part moduleInfo
- Publication number
- JP2001144225A JP2001144225A JP31952899A JP31952899A JP2001144225A JP 2001144225 A JP2001144225 A JP 2001144225A JP 31952899 A JP31952899 A JP 31952899A JP 31952899 A JP31952899 A JP 31952899A JP 2001144225 A JP2001144225 A JP 2001144225A
- Authority
- JP
- Japan
- Prior art keywords
- electronic component
- conductive plate
- heat transfer
- transfer member
- sealing portion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、樹脂製の封止部内
に導電板を埋設してなる電子部品モジュールに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electronic component module in which a conductive plate is embedded in a sealing portion made of resin.
【0002】[0002]
【発明が解決しようとする課題】本出願人は、導電板に
電子部品を搭載してワイヤボンディングした後に導電板
および電子部品を樹脂封止した構成の電子部品モジュー
ルを出願した。この構成の場合、銅箔パターンに比べて
厚肉で幅狭な導電板を使用できるので、装置が小形化さ
れる。しかも、電子部品の電気的な接続部分が樹脂封止
されるので、信頼性が向上する。しかしながら、電子部
品で発生する熱が外部に放出され難くなるので、放熱性
の点で改善の余地が残されている。The present applicant has filed an application for an electronic component module in which an electronic component is mounted on a conductive plate, wire-bonded, and then the conductive plate and the electronic component are sealed with resin. In the case of this configuration, a thicker and narrower conductive plate can be used as compared with the copper foil pattern, so that the device is downsized. In addition, since the electrical connection portion of the electronic component is sealed with resin, the reliability is improved. However, since heat generated in the electronic component is hardly released to the outside, there is room for improvement in heat dissipation.
【0003】本発明は上記事情に鑑みてなされたもので
あり、その目的は、小形で信頼性が高く、しかも、放熱
性に優れた電子部品モジュールを提供することにある。[0003] The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a small, highly reliable electronic component module having excellent heat dissipation.
【0004】[0004]
【課題を解決するための手段】請求項1記載の電子部品
モジュールは、電子部品が搭載された導電板と、前記導
電板および前記電子部品を封止する樹脂製の封止部とを
備え、前記封止部の一面を通して外部に露出する露出部
が前記導電板のうち前記電子部品の裏側に設けられてい
るところに特徴を有している。According to a first aspect of the present invention, there is provided an electronic component module comprising: a conductive plate on which an electronic component is mounted; and a resin sealing portion for sealing the conductive plate and the electronic component. It is characterized in that an exposed portion exposed to the outside through one surface of the sealing portion is provided on the back side of the electronic component in the conductive plate.
【0005】請求項2記載の電子部品モジュールは、電
子部品が搭載された導電板と、前記導電板および前記電
子部品を封止する樹脂製の封止部と、前記封止部内に埋
設され前記導電板のうち前記電子部品の裏側に接触する
接触部を有する伝熱部材とを備え、前記封止部の一面を
通して外部に露出する露出部が前記伝熱部材のうち前記
接触部の裏側に設けられているところに特徴を有してい
る。According to a second aspect of the present invention, there is provided an electronic component module comprising: a conductive plate on which an electronic component is mounted; a resin sealing portion for sealing the conductive plate and the electronic component; A heat transfer member having a contact portion in contact with the back side of the electronic component in the conductive plate, wherein an exposed portion exposed to the outside through one surface of the sealing portion is provided on the back side of the contact portion in the heat transfer member. It has a characteristic where it is used.
【0006】請求項3記載の電子部品モジュールは、電
子部品が搭載された導電板と、前記導電板および前記電
子部品を封止する樹脂製の封止部と、前記封止部内に埋
設され前記導電板のうち前記電子部品の裏側に非接触状
態で近接する近接部を有する伝熱部材とを備え、前記封
止部の一面を通して外部に露出する露出部が前記伝熱部
材のうち前記近接部の裏側に設けられているところに特
徴を有している。According to a third aspect of the present invention, there is provided an electronic component module, comprising: a conductive plate on which an electronic component is mounted; a resin-made sealing portion for sealing the conductive plate and the electronic component; A heat transfer member having a proximity portion in a non-contact state close to the back side of the electronic component in the conductive plate, wherein the exposed portion exposed to the outside through one surface of the sealing portion is the proximity portion of the heat transfer member. The feature is that it is provided on the back side of.
【0007】請求項1ないし3記載の手段によれば、銅
箔パターンに比べて厚肉で幅狭な導電板を使用できるの
で、装置が小形化される。しかも、電流ループが縮小さ
れるので、ノイズが減少する。また、電子部品の電気的
な接続部分が樹脂封止されるので、信頼性が向上する。
また、電子部品で発生する熱が導電板の露出部を通して
外部に放出されたり(請求項1)、導電板から伝熱部材
の露出部を通して外部に放出されるので(請求項2,
3)、電子部品の放熱性が高まる。According to the first to third aspects, a thicker and narrower conductive plate can be used as compared with the copper foil pattern, so that the apparatus can be downsized. In addition, since the current loop is reduced, noise is reduced. Further, the electrical connection portion of the electronic component is sealed with resin, so that the reliability is improved.
Further, heat generated in the electronic component is released to the outside through the exposed portion of the conductive plate (claim 1), and is released from the conductive plate to the outside through the exposed portion of the heat transfer member (claim 2).
3) The heat dissipation of the electronic component is improved.
【0008】請求項4記載の電子部品モジュールは、導
電板が銅を材料に形成され、伝熱部材がアルミニウムを
材料に形成されているところに特徴を有している。請求
項4記載の手段によれば、電子部品で発生する熱が高熱
伝導率の銅およびアルミニウムを通して外部に放出され
るので、電子部品の放熱性が一層高まる。The electronic component module according to the fourth aspect is characterized in that the conductive plate is formed of copper and the heat transfer member is formed of aluminum. According to the fourth aspect, the heat generated in the electronic component is radiated to the outside through copper and aluminum having high thermal conductivity, so that the heat dissipation of the electronic component is further enhanced.
【0009】請求項5記載の電子部品モジュールは、封
止部の一面に絶縁部材を介して放熱部材が設けられてい
るところに特徴を有している。請求項5記載の手段によ
れば、電子部品で発生する熱が絶縁部材から放熱部材を
通して外部に放出されるので、電子部品の放熱性が一層
高まる上、電子部品と放熱部材との間の絶縁性が確保さ
れる。The electronic component module according to the fifth aspect is characterized in that a heat radiating member is provided on one surface of a sealing portion with an insulating member interposed therebetween. According to the fifth aspect of the present invention, heat generated in the electronic component is radiated from the insulating member to the outside through the heat radiating member, so that the heat radiating property of the electronic component is further enhanced and the insulation between the electronic component and the heat radiating member is further improved. Nature is secured.
【0010】請求項6記載の電子部品モジュールは、封
止部の一面に放熱部材が直接的に設けられているところ
に特徴を有している。請求項6記載の手段によれば、電
子部品で発生する熱が放熱部材を通して外部に放出され
るので、電子部品の放熱性が一層高まる。しかも、伝熱
部材と放熱部材との間に絶縁部材を介在する必要がない
ので、構成が簡単化される。The electronic component module according to the present invention is characterized in that a heat radiating member is directly provided on one surface of the sealing portion. According to the sixth aspect, the heat generated in the electronic component is released to the outside through the heat radiation member, so that the heat radiation of the electronic component is further enhanced. In addition, since there is no need to interpose an insulating member between the heat transfer member and the heat radiation member, the configuration is simplified.
【0011】請求項7記載の電子部品モジュールは、伝
熱部材が窒化アルミニウムを材料に形成されているとこ
ろに特徴を有している。請求項7記載の手段によれば、
例えば封止部の一面に放熱部材を直接的に装着する場合
でも放熱部材と電子部品との間が伝熱部材を介して絶縁
されるので、絶縁部材が不要になり、構成が簡単化され
る。An electronic component module according to a seventh aspect is characterized in that the heat transfer member is formed of aluminum nitride. According to the measure of claim 7,
For example, even when the heat radiating member is directly mounted on one surface of the sealing portion, the heat radiating member and the electronic component are insulated from each other through the heat transfer member, so that the insulating member is not required and the configuration is simplified. .
【0012】請求項8記載の電子部品モジュールは、絶
縁部材がシリコンゴムを材料に形成されているところに
特徴を有している。請求項8記載の手段によれば、放熱
部材の絶縁部材に対する密着度が高まる。このため、電
子部品で発生する熱が絶縁部材から放熱部材に効率的に
伝達されるので、電子部品の放熱性が一層高まる。The electronic component module according to the present invention is characterized in that the insulating member is formed of silicon rubber. According to the means of claim 8, the degree of adhesion of the heat radiating member to the insulating member is increased. For this reason, heat generated in the electronic component is efficiently transmitted from the insulating member to the heat radiating member, so that the heat radiating property of the electronic component is further improved.
【0013】請求項9記載の電子部品モジュールは、導
電板の露出部が導電板の他の部分に対して段差を有して
いるところに特徴を有している。請求項10記載の電子
部品モジュールは、導電板のうち伝熱部材に接触する部
分が導電板の他の部分に対して段差を有しているところ
に特徴を有している。請求項11記載の電子部品モジュ
ールは、導電板のうち伝熱部材に近接する部分が導電板
の他の部分に対して段差を有しているところに特徴を有
している。請求項9ないし11記載の手段によれば、封
止部を局部的に薄肉化することに基づいて導電板または
伝熱部材を封止部の外部に露出させる必要がなくなる。
このため、封止部の肉厚を均一化できるので、封止部の
成形時の反り等が抑えられる。The electronic component module according to the ninth aspect is characterized in that the exposed portion of the conductive plate has a step with respect to other portions of the conductive plate. An electronic component module according to a tenth aspect is characterized in that a portion of the conductive plate that contacts the heat transfer member has a step relative to other portions of the conductive plate. An electronic component module according to an eleventh aspect is characterized in that a portion of the conductive plate close to the heat transfer member has a step relative to other portions of the conductive plate. According to the ninth to eleventh aspects, it is not necessary to expose the conductive plate or the heat transfer member to the outside of the sealing portion based on locally reducing the thickness of the sealing portion.
For this reason, since the thickness of the sealing portion can be made uniform, warpage or the like during molding of the sealing portion can be suppressed.
【0014】請求項12記載の電子部品モジュールは、
伝熱部材を樹脂封止用の成形型内に収納する際に成形型
の突部に嵌合される開口部が伝熱部材に設けられている
ところに特徴を有している。請求項12記載の手段によ
れば、封止部の成形時に伝熱部材が導電板に接触または
近接した状態に保持されるので、伝熱部材の位置ずれが
原因で電子部品の放熱性が低下することが防止される。An electronic component module according to claim 12 is
When the heat transfer member is housed in the mold for resin sealing, the heat transfer member is provided with an opening that is fitted to the protrusion of the mold. According to the twelfth aspect, the heat transfer member is held in a state of being in contact with or close to the conductive plate when the sealing portion is formed, so that the heat dissipating property of the electronic component is reduced due to the displacement of the heat transfer member. Is prevented.
【0015】[0015]
【発明の実施の形態】以下、本発明の第1実施例を図1
ないし図5に基づいて説明する。まず、図5において、
キャビネット1は前面が開口する矩形箱状をなすもので
あり、キャビネット1内には調理室2が形成されてい
る。この調理室2の前端部には扉3が回動可能に装着さ
れており、調理室2の前面開口部は扉3の回動操作に基
づいて開閉される。FIG. 1 shows a first embodiment of the present invention.
A description will be given with reference to FIG. First, in FIG.
The cabinet 1 has a rectangular box shape with an open front surface, and a cooking chamber 2 is formed in the cabinet 1. A door 3 is rotatably mounted at a front end of the cooking chamber 2, and a front opening of the cooking chamber 2 is opened and closed based on a rotation operation of the door 3.
【0016】キャビネット1の前端部には調理室2の右
側に位置して操作パネル4が固定されており、キャビネ
ット1内には操作パネル4の後方に位置して機械室5
(図3参照)が形成されている。この機械室5は調理室
2の右側に隣接するものであり、機械室5内にはマグネ
トロン6(図4参照)が配設されている。An operation panel 4 is fixed to the front end of the cabinet 1 on the right side of the cooking chamber 2. The operation panel 4 is located in the cabinet 1 behind the operation panel 4.
(See FIG. 3). The machine room 5 is adjacent to the right side of the cooking room 2, and a magnetron 6 (see FIG. 4) is disposed in the machine room 5.
【0017】機械室5内には、図3に示すように、電子
部品モジュールに相当するマグネトロン駆動回路モジュ
ール7が配設されている。このマグネトロン駆動回路モ
ジュール7は成形基板8にマグネトロン駆動回路9を搭
載してなるものであり、マグネトロン6には商用交流電
源10(図4参照)からマグネトロン駆動回路9を通し
て駆動電源が与えられる。以下、マグネトロン駆動回路
9および成形基板8について詳述する。As shown in FIG. 3, a magnetron drive circuit module 7 corresponding to an electronic component module is disposed in the machine room 5. The magnetron drive circuit module 7 has a magnetron drive circuit 9 mounted on a molded substrate 8. A drive power is supplied to the magnetron 6 from a commercial AC power supply 10 (see FIG. 4) through the magnetron drive circuit 9. Hereinafter, the magnetron drive circuit 9 and the molded substrate 8 will be described in detail.
【0018】<マグネトロン駆動回路9について>商用
交流電源10の両端子には、図4に示すように、整流回
路11の両入力端子が接続されている。この整流回路1
1は4個の整流ダイオード12をブリッジ接続してなる
ものであり、整流回路11の両入力端子間には雑音防止
コンデンサ13が接続されている。また、整流回路11
の出力端子(+)にはチョークコイル14の一方の端子
が接続され、チョークコイル14の他方の端子は2個の
共振コンデンサ15の直列回路を介して整流回路11の
出力端子(−)に接続されている。<Regarding the Magnetron Driving Circuit 9> Both input terminals of the rectifying circuit 11 are connected to both terminals of the commercial AC power supply 10, as shown in FIG. This rectifier circuit 1
Reference numeral 1 denotes a bridge connection of four rectifier diodes 12, and a noise prevention capacitor 13 is connected between both input terminals of the rectifier circuit 11. The rectifier circuit 11
Is connected to one terminal of the choke coil 14, and the other terminal of the choke coil 14 is connected to the output terminal (−) of the rectifier circuit 11 via a series circuit of two resonance capacitors 15. Have been.
【0019】整流回路11の両出力端子間には平滑コン
デンサ16およびインバータ回路17が接続されてい
る。このインバータ回路17は2個のIGBT18と2
個のフライホイールダイオード19とから構成されたも
のであり、各フライホイールダイオード19はIGBT
18のコレクタ端子およびエミッタ端子間に逆並列に接
続されている。A smoothing capacitor 16 and an inverter circuit 17 are connected between both output terminals of the rectifier circuit 11. This inverter circuit 17 includes two IGBTs 18 and 2
And flywheel diodes 19, each of which is an IGBT.
18 are connected in anti-parallel between the collector terminal and the emitter terminal.
【0020】2個のIGBT18の共通接続点には昇圧
トランス20の一次コイル21の一方の端子が接続さ
れ、2個の共振コンデンサ15の共通接続点には一次コ
イル21の他方の端子が接続されている。この昇圧トラ
ンス20は合成樹脂製のボビン22(図3参照)に一次
コイル21,二次コイル23,ヒータコイル24を巻装
してなるものであり、一次コイル21は2個の共振コン
デンサ15と共に共振回路25を構成している。A common connection point between the two IGBTs 18 is connected to one terminal of a primary coil 21 of the step-up transformer 20, and a common connection point between the two resonance capacitors 15 is connected to the other terminal of the primary coil 21. ing. The step-up transformer 20 is formed by winding a primary coil 21, a secondary coil 23, and a heater coil 24 around a bobbin 22 (see FIG. 3) made of a synthetic resin. The resonance circuit 25 is configured.
【0021】二次コイル23の両端子には高圧回路26
が接続されている。この高圧回路26は二次コイル23
の両端子間に接続された高圧ダイオード27と、高圧ダ
イオード27のアノード端子と二次コイル23の一方の
端子との間に介在された高圧コンデンサ28と、高圧コ
ンデンサ28の両端子間に接続された高圧抵抗29とを
有するものであり、高圧ダイオード27のカソード端子
はキャビネット1の底板30(図3参照)にアース接続
され、二次コイル23の他方の端子は高圧ダイオード2
7のカソード端子と底板30との間に接続されている。A high voltage circuit 26 is connected to both terminals of the secondary coil 23.
Is connected. This high voltage circuit 26 is a secondary coil 23
A high-voltage diode 27 connected between the two terminals of the high-voltage diode 27; a high-voltage capacitor 28 interposed between the anode terminal of the high-voltage diode 27 and one terminal of the secondary coil 23; The cathode terminal of the high-voltage diode 27 is grounded to the bottom plate 30 of the cabinet 1 (see FIG. 3), and the other terminal of the secondary coil 23 is connected to the high-voltage diode 2.
7 is connected between the cathode terminal 7 and the bottom plate 30.
【0022】ヒータコイル24の両端子は、図4に示す
ように、マグネトロン6の両陰極端子に接続されてい
る。このマグネトロン6の陰極はヒータを兼用するもの
であり、マグネトロン6の陽極端子はキャビネット1の
底板30にアース接続されている。尚、各整流ダイオー
ド12,各IGBT18,各フライホイールダイオード
19,高圧ダイオード27は電子部品に相当するもので
あり、半導体ベアチップから構成されている。Both terminals of the heater coil 24 are connected to both cathode terminals of the magnetron 6, as shown in FIG. The cathode of the magnetron 6 also serves as a heater, and the anode terminal of the magnetron 6 is grounded to the bottom plate 30 of the cabinet 1. The rectifier diodes 12, the IGBTs 18, the flywheel diodes 19, and the high-voltage diodes 27 correspond to electronic components, and are composed of semiconductor bare chips.
【0023】<成形基板8について>成形基板8は、図
2に示すように、矩形板状をなす封止部31内に細長な
複数の導電板32を埋設してなるものであり、封止部3
1は成形型(図示せず)内にエポキシ系樹脂を注入する
ことに基づいて形成されている。また、複数の導電板3
2は整流回路11〜高圧抵抗29を電気的に接続する図
4の回路パターン33を構成するものであり、銅板をプ
レス加工することに基づいて形成されている。<Regarding the Molded Substrate 8> As shown in FIG. 2, the molded substrate 8 is formed by embedding a plurality of elongated conductive plates 32 in a rectangular plate-shaped sealing portion 31. Part 3
1 is formed based on injecting an epoxy resin into a mold (not shown). In addition, a plurality of conductive plates 3
Reference numeral 2 denotes a circuit pattern 33 for electrically connecting the rectifier circuit 11 to the high-voltage resistor 29, which is formed by pressing a copper plate.
【0024】封止部31の下面には、図3に示すよう
に、4隅部に位置して円筒状のボス34が一体形成され
ている(2個のみ図示する)。これら各ボス34の内周
面には下方からキャビネット1の底板30を通してねじ
35が締め込まれており、成形基板8は4本のねじ35
の締結力で底板30の上面に固定されている。また、封
止部31の上面には絶縁バリア36が一体形成されてい
る。この絶縁バリア36は前後方向へ延びる平板状をな
すものであり、封止部31の上面を左半部の高圧領域3
7と右半部の低圧領域38とに仕切っている。As shown in FIG. 3, on the lower surface of the sealing portion 31, cylindrical bosses 34 are integrally formed at four corners (only two bosses are shown). Screws 35 are screwed into the inner peripheral surface of each of the bosses 34 from below through the bottom plate 30 of the cabinet 1.
Is fixed to the upper surface of the bottom plate 30 with the fastening force of Further, an insulating barrier 36 is integrally formed on the upper surface of the sealing portion 31. The insulating barrier 36 is formed in a flat plate shape extending in the front-rear direction.
7 and a low pressure region 38 in the right half.
【0025】昇圧トランス20のボビン22には2個の
貫通孔(図示せず)が形成されており、各貫通孔内には
上方からねじ39が挿入されている。また、封止部31
には高圧領域37内に位置して2個のねじ孔40が形成
されており、昇圧トランス20は各ねじ39の下端部を
ねじ孔40内に締め込むことに基づいて封止部31の高
圧領域37内に固定されている。The bobbin 22 of the step-up transformer 20 is formed with two through holes (not shown), and a screw 39 is inserted into each through hole from above. Also, the sealing portion 31
Has two screw holes 40 formed in the high-pressure area 37. The step-up transformer 20 tightens the lower end of each screw 39 into the screw hole 40 so that the high-pressure It is fixed in the area 37.
【0026】成形基板8には、図2に示すように、複数
の貫通孔41が形成されている。これら各貫通孔41
は、図1に示すように、導電板32に形成された円形状
の端子孔42と、封止部31の上半部を貫通するテーパ
孔43と、封止部31の下半部を貫通するテーパ孔44
とから構成されたものであり、昇圧トランス20の複数
のリード端子45(1本のみ図示する)は上方から複数
の貫通孔41内に挿入され、昇圧トランス20は複数の
リード端子45を複数の端子孔42の周縁部に半田付け
することに基づいて導電板32(回路パターン33)に
電気的に接続されている。As shown in FIG. 2, a plurality of through holes 41 are formed in the molded substrate 8. Each of these through holes 41
As shown in FIG. 1, a circular terminal hole 42 formed in the conductive plate 32, a tapered hole 43 penetrating the upper half of the sealing part 31, and a penetrating lower part of the sealing part 31 Tapered hole 44
A plurality of lead terminals 45 (only one is shown) of the step-up transformer 20 are inserted into the plurality of through holes 41 from above, and the step-up transformer 20 connects the plurality of lead terminals 45 to the plurality of lead terminals 45. It is electrically connected to the conductive plate 32 (circuit pattern 33) based on soldering to the peripheral portion of the terminal hole 42.
【0027】封止部31の上面には、図3に示すよう
に、低圧領域38内に位置して雑音防止コンデンサ1
3,チョークコイル14,2個の共振コンデンサ15,
平滑コンデンサ16が搭載され、高圧領域37内に位置
して高圧コンデンサ28,高圧抵抗29が搭載されてい
る(チョークコイル14,高圧コンデンサ28,高圧抵
抗29の搭載状態は図示を省略する)。これら雑音防止
コンデンサ13〜高圧抵抗29の複数のリード端子45
は上方から複数の貫通孔41内に挿入されており、雑音
防止コンデンサ13〜高圧抵抗29は複数のリード端子
45を複数の端子孔42の周縁部に半田付けすることに
基づいて回路パターン33に電気的に接続されている。On the upper surface of the sealing portion 31, as shown in FIG.
3, choke coil 14, two resonance capacitors 15,
The smoothing capacitor 16 is mounted, and the high voltage capacitor 28 and the high voltage resistor 29 are mounted in the high voltage region 37 (the mounting state of the choke coil 14, the high voltage capacitor 28, and the high voltage resistor 29 is not shown). The plurality of lead terminals 45 of the noise prevention capacitor 13 to the high voltage resistor 29
Are inserted into the plurality of through holes 41 from above, and the noise prevention capacitor 13 to the high voltage resistor 29 are connected to the circuit pattern 33 based on soldering the plurality of lead terminals 45 to the peripheral portions of the plurality of terminal holes 42. It is electrically connected.
【0028】所定の複数の導電板32には、図2に示す
ように、折曲部46が形成されている。これら各折曲部
46は、図1に示すように、当該導電板32の残りの部
分に対して下方に段差を有するものであり、各折曲部4
6の下面全域は封止部31の下面を通して外部に露出す
る露出部47として機能する。尚、各露出部47は封止
部31の下面と同一の水平面上に配置されている。As shown in FIG. 2, a bent portion 46 is formed on a plurality of predetermined conductive plates 32. As shown in FIG. 1, each of the bent portions 46 has a step below the remaining portion of the conductive plate 32.
The entire lower surface of 6 functions as an exposed portion 47 that is exposed to the outside through the lower surface of the sealing portion 31. In addition, each exposed part 47 is arranged on the same horizontal plane as the lower surface of the sealing part 31.
【0029】封止部31内には、図2に示すように、4
個の整流ダイオード12,2個のIGBT18,2個の
フライホイールダイオード19,高圧ダイオード27が
埋設されている。これら4個の整流ダイオード12〜高
圧ダイオード27は折曲部46の上面に搭載されたもの
であり、図1に1個のIGBT18を代表して示すよう
に、導電板32にワイヤボンディングされることに基づ
いて封止部31内で回路パターン33に電気的に接続さ
れている。As shown in FIG. 2, 4
Two rectifier diodes 12, two IGBTs 18, two flywheel diodes 19, and a high-voltage diode 27 are embedded. These four rectifier diodes 12 to high-voltage diodes 27 are mounted on the upper surface of the bent portion 46, and are wire-bonded to the conductive plate 32 as shown as one IGBT 18 in FIG. Is electrically connected to the circuit pattern 33 in the sealing portion 31 based on
【0030】所定の導電板32には、図3に示すよう
に、封止部31の外部に突出するアース接続部48が形
成されている。このアース接続部48は所定の導電板3
2を折曲形成してなるものであり、キャビネット1の底
板30にねじ止めされることに基づいてアース接続され
ている。尚、アース接続部48は、図4に示すように、
高圧ダイオード27のカソード端子を底板30にアース
接続するものである。As shown in FIG. 3, the predetermined conductive plate 32 is formed with an earth connection portion 48 protruding outside the sealing portion 31. The ground connection portion 48 is provided on the predetermined conductive plate 3.
2 is formed by bending, and is grounded by being screwed to the bottom plate 30 of the cabinet 1. In addition, as shown in FIG.
The cathode terminal of the high voltage diode 27 is grounded to the bottom plate 30.
【0031】封止部31の下面には、図3に示すよう
に、シリコンゴム製の絶縁部材49を介して放熱部材5
0がねじ止めされている。前者の絶縁部材49は平板状
をなすものであり、各露出部47は、図1に示すよう
に、絶縁部材49の上面に密着している。後者の放熱部
材50は平板状のベース51と前後方向へ延びる複数の
放熱フィン52とを有するものであり、絶縁部材49の
下面はベース51の上面に密着している。尚、放熱部材
50はアルミニウムを押出し成形することに基づいて形
成されたものである。マグネトロン駆動回路モジュール
7は以上のように構成されている。As shown in FIG. 3, the heat radiating member 5 is provided on the lower surface of the sealing portion 31 through an insulating member 49 made of silicon rubber.
0 is screwed. The former insulating member 49 has a flat plate shape, and each exposed portion 47 is in close contact with the upper surface of the insulating member 49 as shown in FIG. The latter heat-dissipating member 50 has a flat base 51 and a plurality of heat-dissipating fins 52 extending in the front-rear direction. The lower surface of the insulating member 49 is in close contact with the upper surface of the base 51. The heat radiation member 50 is formed based on extrusion molding of aluminum. The magnetron drive circuit module 7 is configured as described above.
【0032】機械室5内にはプリント配線基板からなる
制御回路基板(図示せず)が配設されており、制御回路
基板には制御装置(図示せず)が搭載されている。この
制御装置はマイクロコンピュータおよびゲートドライブ
回路等を有するものであり、2個のIGBT18をスイ
ッチング制御することに基づいて昇圧トランス20の一
次コイル21で発生する電圧および電流を変化させ、マ
グネトロン6の加熱出力をコントロールする。A control circuit board (not shown) composed of a printed wiring board is provided in the machine room 5, and a control device (not shown) is mounted on the control circuit board. This control device has a microcomputer, a gate drive circuit, and the like, and changes the voltage and current generated in the primary coil 21 of the step-up transformer 20 based on switching control of the two IGBTs 18 to heat the magnetron 6. Control the output.
【0033】次にマグネトロン駆動回路モジュール7の
製造方法について説明する。Next, a method of manufacturing the magnetron drive circuit module 7 will be described.
【0034】(1)4個の整流ダイオード12,2個の
IGBT18,2個のフライホイールダイオード19,
1個の高圧ダイオード27を折曲部46の上面に搭載
し、所定の導電板32にワイヤボンディングする。この
状態では複数の導電板32が複数の繋ぎ桟(図示せず)
を介して1枚の板状に連結された状態にあり、この1枚
の板材をフレーム板と称する。(1) Four rectifier diodes 12, two IGBTs 18, two flywheel diodes 19,
One high voltage diode 27 is mounted on the upper surface of the bent portion 46 and wire-bonded to a predetermined conductive plate 32. In this state, a plurality of conductive plates 32 are connected to a plurality of connecting bars (not shown).
And is connected to a single plate through the first plate, and this single plate is referred to as a frame plate.
【0035】(2)フレーム板を成形型の可動型と固定
型(いずれも図示せず)との間で挟持することに基づい
て成形型内に位置決め状態で収納する。そして、成形型
内にエポキシ系樹脂を注入することに基づいて成形基板
8を成形し、成形型内から成形基板8を取出す。(2) The frame plate is positioned and stored in the molding die based on being sandwiched between a movable die and a fixed die (both not shown). Then, the molded substrate 8 is molded based on the injection of the epoxy resin into the molding die, and the molded substrate 8 is removed from the molding die.
【0036】(3)成形基板8をプレス装置(図示せ
ず)にセットし、フレーム板にプレス加工を施す。そし
て、複数の繋ぎ桟を一挙に切断し、フレーム板を複数の
導電板32に分離する。(3) The molded substrate 8 is set in a press device (not shown), and the frame plate is pressed. Then, the plurality of connecting bars are cut at once, and the frame plate is separated into the plurality of conductive plates 32.
【0037】(4)雑音防止コンデンサ13,チョーク
コイル14,共振コンデンサ15,平滑コンデンサ1
6,高圧コンデンサ28,高圧抵抗29の複数のリード
端子45を成形基板8の複数の貫通孔41内に挿入す
る。これと共に、昇圧トランス20の複数のリード端子
45を複数の貫通孔41内に挿入し、昇圧トランス20
を封止部31にねじ止めする。(4) Noise prevention capacitor 13, choke coil 14, resonance capacitor 15, smoothing capacitor 1
6. Insert the plurality of lead terminals 45 of the high voltage capacitor 28 and the high voltage resistor 29 into the plurality of through holes 41 of the molded board 8. At the same time, the plurality of lead terminals 45 of the step-up transformer 20 are inserted into the plurality of through holes 41, and the step-up transformer 20
Is screwed to the sealing portion 31.
【0038】(5)成形基板8を半田槽(図示せず)内
に投入し、各リード端子45を半田槽内で端子孔42の
周縁部に半田付けする。(5) The molded substrate 8 is put into a solder bath (not shown), and each lead terminal 45 is soldered to a peripheral portion of the terminal hole 42 in the solder bath.
【0039】上記第1実施例によれば、IGBT18等
の内部電子部品を導電板32に搭載した。このため、銅
箔パターンに比べて厚肉で幅狭な導電板32を使用でき
るので、マグネトロン駆動回路モジュール7が小形化さ
れる。しかも、電流ループが縮小されるので、ノイズが
減少する。近年では電子レンジの商品性の向上のため、
調理室2の容積率が高くなる傾向にある。このため、機
械室5が小さくなっているので、マグネトロン駆動回路
モジュール7の小形化には大きなメリットがある。According to the first embodiment, the internal electronic components such as the IGBT 18 are mounted on the conductive plate 32. For this reason, the conductive plate 32, which is thicker and narrower than the copper foil pattern, can be used, so that the magnetron drive circuit module 7 is downsized. In addition, since the current loop is reduced, noise is reduced. In recent years, in order to improve the merchantability of microwave ovens,
The volume ratio of the cooking chamber 2 tends to increase. For this reason, since the machine room 5 is small, there is a great merit in downsizing the magnetron drive circuit module 7.
【0040】また、IGBT18等を封止部31内に埋
設した。このため、IGBT18等の電気的な接続部分
が樹脂封止されるので、電気的な信頼性が向上する。ま
た、導電板32のうちIGBT18等の裏側に露出部4
7を設けた。このため、IGBT18等で発生する熱が
露出部47を通して封止部31の外部に放出されるの
で、IGBT18等の放熱性が向上する。The IGBT 18 and the like are embedded in the sealing portion 31. For this reason, the electrical connection portion such as the IGBT 18 is sealed with resin, so that the electrical reliability is improved. The exposed portion 4 is provided on the back side of the IGBT 18 or the like in the conductive plate 32.
7 was provided. For this reason, the heat generated in the IGBT 18 and the like is released to the outside of the sealing portion 31 through the exposed portion 47, so that the heat dissipation of the IGBT 18 and the like is improved.
【0041】また、銅製の導電板32を使用した。この
ため、IGBT18等で発生する熱が高熱伝導率の銅を
通して外部に放出されるので、IGBT18等の放熱性
が一層高まる。しかも、雑音防止コンデンサ13等の外
部電子部品のリード端子45を端子孔42内に挿入して
半田付けできるので、生産性が向上する。A conductive plate 32 made of copper was used. Therefore, heat generated in the IGBT 18 or the like is released to the outside through copper having a high thermal conductivity, so that the heat dissipation of the IGBT 18 or the like is further improved. In addition, since the lead terminals 45 of external electronic components such as the noise prevention capacitor 13 can be inserted into the terminal holes 42 and soldered, productivity is improved.
【0042】また、IGBT18等のリード端子45を
成形基板8の貫通孔41内に上面側から挿入した。この
ため、成形基板8を半田槽内に投入することに基づいて
複数のリード端子45を下面側から複数の導電板32に
一挙に半田付けできるので、製造作業性が向上する。Further, the lead terminal 45 of the IGBT 18 or the like was inserted into the through hole 41 of the molded substrate 8 from the upper surface side. For this reason, the plurality of lead terminals 45 can be soldered to the plurality of conductive plates 32 from the lower surface all at once based on the injection of the molded substrate 8 into the solder bath, so that the manufacturing workability is improved.
【0043】また、封止部31の下面に絶縁部材49を
介して放熱部材50を装着したので、IGBT18等で
発生する熱が絶縁部材49および放熱部材50を通して
外部に放出される。このため、IGBT18等の放熱性
が一層高まる上、IGBT18等と放熱部材50との間
の絶縁性が確保される。Since the heat radiating member 50 is mounted on the lower surface of the sealing portion 31 via the insulating member 49, the heat generated in the IGBT 18 and the like is radiated to the outside through the insulating member 49 and the heat radiating member 50. Therefore, the heat dissipation of the IGBT 18 and the like is further improved, and the insulation between the IGBT 18 and the like and the heat dissipation member 50 is ensured.
【0044】また、シリコンゴム製の絶縁部材49を使
用したので、露出部47の絶縁部材49に対する密着度
および放熱部材50の絶縁部材49に対する密着度が高
まる。このため、IGBT18等で発生する熱が露出部
47から絶縁部材49を通して放熱部材50に効率的に
伝達されるので、IGBT18等の放熱性が一層高ま
る。Since the insulating member 49 made of silicon rubber is used, the degree of adhesion of the exposed portion 47 to the insulating member 49 and the degree of adhesion of the heat radiating member 50 to the insulating member 49 are increased. For this reason, heat generated in the IGBT 18 and the like is efficiently transmitted from the exposed portion 47 to the heat radiating member 50 through the insulating member 49, so that the heat radiation of the IGBT 18 and the like is further improved.
【0045】また、導電板32の露出部47と当該導電
板32の他の部分との間に段差を形成したので、封止部
31を局部的に薄肉化することに基づいて導電板32に
露出部47を設ける必要がなくなる。このため、封止部
31の肉厚を均一化できるので、封止部31の成形時の
反り等が抑えられる。しかも、IGBT18等の搭載部
分と別の導電板32との離間距離が長くなるので、IG
BT18等の別の導電板32に対する絶縁性が向上す
る。Further, since a step is formed between the exposed portion 47 of the conductive plate 32 and the other portion of the conductive plate 32, the conductive plate 32 is formed on the basis of the local thinning of the sealing portion 31. There is no need to provide the exposed portion 47. For this reason, since the thickness of the sealing portion 31 can be made uniform, warpage or the like during molding of the sealing portion 31 can be suppressed. In addition, the distance between the mounting portion such as the IGBT 18 and the other conductive plate 32 becomes longer, so that the
The insulating property with respect to another conductive plate 32 such as the BT 18 is improved.
【0046】次に本発明の第2実施例を図6および図7
に基づいて説明する。封止部31内には、図6に示すよ
うに、複数の伝熱部材53が埋設されている(1個のみ
図示する)。これら各伝熱部材53はアルミニウムを材
料に形成されたものであり、各伝熱部材53には折曲部
46の下面に密着する接触部54および封止部31の下
面を通して外部に露出する露出部55が設けられてい
る。これら各露出部55は封止部31の下面と同一の水
平面上に配置され、絶縁部材49の上面に密着してい
る。Next, a second embodiment of the present invention will be described with reference to FIGS.
It will be described based on. As shown in FIG. 6, a plurality of heat transfer members 53 are embedded in the sealing portion 31 (only one is shown). Each of the heat transfer members 53 is formed of aluminum as a material, and each heat transfer member 53 is exposed to the outside through the contact portion 54 that is in close contact with the lower surface of the bent portion 46 and the lower surface of the sealing portion 31. A part 55 is provided. Each of these exposed portions 55 is arranged on the same horizontal plane as the lower surface of the sealing portion 31 and is in close contact with the upper surface of the insulating member 49.
【0047】各伝熱部材53には、図7に示すように、
複数の位置決め孔56が形成されている(1個のみ図示
する)。これら各位置決め孔56は開口部に相当するも
のであり、封止部31の成形時には成形型57の複数の
位置決めピン58(1個のみ図示する)の外周面に複数
の位置決め孔56を嵌合することに基づいて伝熱部材5
3を位置決めする。この状態で成形型57内にフレーム
板を収納し、エポキシ系樹脂を注入することに基づいて
封止部31を成形する。尚、各位置決めピン58は成形
型57の突部に相当するものである。As shown in FIG. 7, each heat transfer member 53 has
A plurality of positioning holes 56 are formed (only one is shown). Each of the positioning holes 56 corresponds to an opening. When the sealing portion 31 is formed, the plurality of positioning holes 56 are fitted to the outer peripheral surfaces of the plurality of positioning pins 58 (only one is shown) of the molding die 57. Heat transfer member 5
Position 3 In this state, the frame plate is housed in the molding die 57, and the sealing portion 31 is molded based on the injection of the epoxy resin. Each positioning pin 58 corresponds to a projection of the molding die 57.
【0048】上記第2実施例によれば、導電板32のう
ちIGBT18等の裏側に電熱部材53の接触部54を
接触させ、伝熱部材53のうち接触部54の裏側に露出
部55を設けた。このため、IGBT18等で発生する
熱が導電板32から伝熱部材53の露出部55を通して
外部に放出されるので、IGBT18等の放熱性が向上
する。According to the second embodiment, the contact portion 54 of the electric heating member 53 is brought into contact with the back side of the IGBT 18 or the like of the conductive plate 32, and the exposed portion 55 is provided on the back side of the contact portion 54 of the heat transfer member 53. Was. For this reason, heat generated in the IGBT 18 and the like is released from the conductive plate 32 to the outside through the exposed portion 55 of the heat transfer member 53, so that the heat dissipation of the IGBT 18 and the like is improved.
【0049】また、シリコンゴム製の絶縁部材49を用
いたので、伝熱部材53の露出部55の絶縁部材49に
対する密着度および放熱部材50の絶縁部材49に対す
る密着度が高まる。このため、IGBT18等で発生す
る熱が露出部55から絶縁部材49を通して放熱部材5
0に効率的に伝達されるので、IGBT18等の放熱性
が一層高まる。Since the insulating member 49 made of silicon rubber is used, the degree of adhesion of the exposed portion 55 of the heat transfer member 53 to the insulating member 49 and the degree of adhesion of the heat radiating member 50 to the insulating member 49 are increased. Therefore, heat generated in the IGBT 18 or the like is transmitted from the exposed portion 55 through the insulating member 49 to the heat radiating member 5.
Since it is efficiently transmitted to 0, the heat dissipation of the IGBT 18 and the like is further enhanced.
【0050】また、導電板32のうち伝熱部材53の接
触部54に接触する部分と当該導電板32の他の部分と
の間に段差を形成したので、封止部31を局部的に薄肉
化することに基づいて伝熱部材53の露出部55を封止
部31の外部に露出させる必要がなくなる。このため、
封止部31の肉厚を均一化できるので、封止部31の成
形時の反り等が抑えられる。しかも、IGBT18等の
搭載部分と別の導電板32との間の離間距離が長くなる
ので、IGBT18等の別の導電板32に対する絶縁性
が向上する。Further, since a step is formed between the portion of the conductive plate 32 that contacts the contact portion 54 of the heat transfer member 53 and the other portion of the conductive plate 32, the sealing portion 31 is locally thinned. Therefore, it is not necessary to expose the exposed portion 55 of the heat transfer member 53 to the outside of the sealing portion 31 based on the formation. For this reason,
Since the thickness of the sealing portion 31 can be made uniform, warpage during molding of the sealing portion 31 can be suppressed. In addition, since the separation distance between the mounting portion such as the IGBT 18 and the other conductive plate 32 is increased, the insulating property with respect to another conductive plate 32 such as the IGBT 18 is improved.
【0051】また、伝熱部材53に位置決め孔56を設
け、位置決め孔56を成形型57の位置決めピン58に
嵌合した。このため、封止部31の成形時に伝熱部材5
3が導電板32に対して位置ずれすることが防止され、
導電板32に接触した状態に保持されるので、伝熱部材
53の位置ずれが原因で放熱性が低下することが防止さ
れる。A positioning hole 56 was provided in the heat transfer member 53, and the positioning hole 56 was fitted to a positioning pin 58 of a molding die 57. Therefore, when the sealing portion 31 is formed, the heat transfer member 5 is formed.
3 is prevented from being displaced with respect to the conductive plate 32,
Since the heat transfer member 53 is kept in contact with the conductive plate 32, it is possible to prevent the heat dissipation from being deteriorated due to the displacement of the heat transfer member 53.
【0052】尚、上記第1および第2実施例において
は、シリコンゴム製の絶縁部材49をを使用したが、こ
れに限定されるものではなく、例えば天然ゴム製の絶縁
部材またはセラミック製の絶縁部材を使用しても良い。In the first and second embodiments, the insulating member 49 made of silicon rubber is used. However, the present invention is not limited to this. For example, an insulating member made of natural rubber or an insulating member made of ceramic is used. A member may be used.
【0053】次に本発明の第3実施例を図8に基づいて
説明する。各伝熱部材53には折曲部46の下面に隙間
を介して近接する近接部59が設けられている。また、
封止部31の下面には放熱部材50が直接的にねじ止め
されており、各伝熱部材53の露出部55は放熱部材5
0のベース51に密着している。Next, a third embodiment of the present invention will be described with reference to FIG. Each heat transfer member 53 is provided with a proximity portion 59 which is adjacent to the lower surface of the bent portion 46 via a gap. Also,
The heat radiating member 50 is directly screwed to the lower surface of the sealing portion 31, and the exposed portion 55 of each heat transfer member 53 is
0 base 51.
【0054】上記第3実施例によれば、導電板32のう
ちIGBT18等の裏側に伝熱部材53の近接部59を
非接触状態で近接させ、伝熱部材53のうち近接部59
の裏側に露出部55を設けた。このため、IGBT18
等で発生する熱が導電板32から伝熱部材53の露出部
55を通して外部に放出されるので、IGBT18等の
放熱性が向上する。According to the third embodiment, the adjacent portion 59 of the heat transfer member 53 is made to approach the back side of the IGBT 18 or the like in the conductive plate 32 in a non-contact state.
The exposed part 55 was provided on the back side of the. For this reason, IGBT18
Since the heat generated in the IGBT 18 and the like is released to the outside from the conductive plate 32 through the exposed portion 55 of the heat transfer member 53, the heat dissipation of the IGBT 18 and the like is improved.
【0055】また、封止部31の下面に放熱部材50を
直接的に装着した。このため、伝熱部材53と放熱部材
50との間に絶縁部材49を介在する必要がなくなるの
で、構成が簡単化される。Further, the heat radiating member 50 was directly mounted on the lower surface of the sealing portion 31. Therefore, there is no need to interpose the insulating member 49 between the heat transfer member 53 and the heat radiating member 50, so that the configuration is simplified.
【0056】尚、上記第2および第3実施例において
は、アルミニウム製の伝熱部材53を使用したが、これ
に限定されるものではなく、例えば窒化アルミニウム製
の伝熱部材を使用しても良い。この伝熱部材は高伝熱性
および絶縁性の双方の兼ね備えるものであり、上記第2
実施例に窒化アルミニウム製の伝熱部材を使用した場合
には封止部31の下面に絶縁部材49を介さずに放熱部
材50を直接的に接触させることができる。また、上記
第3実施例に窒化アルミニウム製の伝熱部材を使用した
場合にはIGBT18等と放熱部材50との間の絶縁性
が向上する。In the second and third embodiments, the heat transfer member 53 made of aluminum is used. However, the present invention is not limited to this. For example, a heat transfer member made of aluminum nitride may be used. good. This heat transfer member has both high heat conductivity and insulating properties.
When a heat transfer member made of aluminum nitride is used in the embodiment, the heat radiating member 50 can be brought into direct contact with the lower surface of the sealing portion 31 without the interposition of the insulating member 49. Further, when a heat transfer member made of aluminum nitride is used in the third embodiment, the insulation between the IGBT 18 and the like and the heat dissipation member 50 is improved.
【0057】また、上記第2および第3実施例において
は、伝熱部材53に貫通孔状の複数の位置決め孔56を
設けたが、これに限定されるものではなく、例えば下面
が開口する複数の凹部を設け、成形型57の複数の位置
決めピン58を複数の凹部内に嵌合することに基づいて
伝熱部材53を成形型57に対して位置決めしても良
い。In the second and third embodiments, a plurality of positioning holes 56 are formed in the heat transfer member 53. However, the present invention is not limited to this. The heat transfer member 53 may be positioned with respect to the molding die 57 based on fitting of the plurality of positioning pins 58 of the molding die 57 into the plurality of depressions.
【0058】また、上記第1ないし第3実施例において
は、インバータ回路17を2個のIGBT18および2
個のフライホイールダイオード19から構成し、共振回
路25を2個の共振コンデンサ15および一次コイル2
1から構成したが、これに限定されるものではなく、例
えば本発明の第4実施例を示す図9のように、インバー
タ回路17を1個のIGBT18および1個のフライホ
イールダイオード19から構成し、共振回路25を1個
の共振コンデンサ15および一次コイル21から構成し
ても良い。In the first to third embodiments, the inverter circuit 17 is connected to the two IGBTs 18 and 2
The resonance circuit 25 is composed of two resonance capacitors 15 and the primary coil 2.
The inverter circuit 17 is composed of one IGBT 18 and one flywheel diode 19, as shown in FIG. 9 showing a fourth embodiment of the present invention. , The resonance circuit 25 may be composed of one resonance capacitor 15 and the primary coil 21.
【0059】また、上記第1ないし第4実施例において
は、銅板をプレス加工することに基づいて複数の導電板
32を形成したが、これに限定されるものではなく、例
えば銅板にエッチングを施すことに基づいて複数の導電
板32を形成しても良い。In the first to fourth embodiments, a plurality of conductive plates 32 are formed by pressing a copper plate. However, the present invention is not limited to this. For example, the copper plate is etched. Based on this, a plurality of conductive plates 32 may be formed.
【0060】また、上記第1ないし第4実施例において
は、整流ダイオード12,IGBT18,フライホイー
ルダイオード19,高圧ダイオード27を封止部31内
に埋設したが、これに限定されるものではなく、例えば
整流ダイオード12,IGBT18,フライホイールダ
イオード19,高圧ダイオード27のうち少なくとも1
個の電子部品を封止部31内に埋設し、残りの電子部品
を封止部31の上面に搭載しても良い。In the first to fourth embodiments, the rectifier diode 12, the IGBT 18, the flywheel diode 19, and the high-voltage diode 27 are embedded in the sealing portion 31, but the present invention is not limited to this. For example, at least one of the rectifier diode 12, the IGBT 18, the flywheel diode 19, and the high-voltage diode 27
The electronic components may be embedded in the sealing portion 31, and the remaining electronic components may be mounted on the upper surface of the sealing portion 31.
【0061】また、上記第1ないし第4実施例において
は、雑音防止コンデンサ13,チョークコイル14,共
振コンデンサ15,平滑コンデンサ16,高圧コンデン
サ28,高圧抵抗29を封止部31の上面に搭載した
が、これに限定されるものではなく、例えば雑音防止コ
ンデンサ13,チョークコイル14,共振コンデンサ1
5,平滑コンデンサ16,高圧コンデンサ28,高圧抵
抗29のうち少なくとも1個の電子部品を封止部31の
上面に搭載し、残りの電子部品を封止部31内に埋設し
ても良い。In the first to fourth embodiments, the noise prevention capacitor 13, the choke coil 14, the resonance capacitor 15, the smoothing capacitor 16, the high voltage capacitor 28, and the high voltage resistor 29 are mounted on the upper surface of the sealing portion 31. However, the present invention is not limited to this. For example, the noise prevention capacitor 13, the choke coil 14, the resonance capacitor 1
5, At least one electronic component among the smoothing capacitor 16, the high-voltage capacitor 28, and the high-voltage resistor 29 may be mounted on the upper surface of the sealing portion 31, and the remaining electronic components may be embedded in the sealing portion 31.
【0062】また、上記第1ないし第4実施例において
は、電子レンジのマグネトロン6を駆動するマグネトロ
ン駆動回路モジュール7に本発明を適用したが、これに
限定されるものではなく、例えば高周波加熱器の加熱コ
イルを駆動するコイル駆動回路モジュールや洗濯機のメ
インモータを回転駆動するモータ駆動回路モジュール等
に本発明を適用しても良い。In the first to fourth embodiments, the present invention is applied to the magnetron drive circuit module 7 for driving the magnetron 6 of the microwave oven. However, the present invention is not limited to this. The present invention may be applied to a coil drive circuit module for driving a heating coil, a motor drive circuit module for rotationally driving a main motor of a washing machine, and the like.
【0063】[0063]
【発明の効果】以上の説明から明らかなように、本発明
の電子部品モジュールは次の効果を奏する。請求項1な
いし3記載の手段によれば、電子部品を導電板に搭載
し、電子部品および導電板を樹脂封止したので、装置が
小形化され且つ信頼性が高まる。しかも、導電板に露出
部を設けたり(請求項1)、伝熱部材に露出部を設けた
ので(請求項2および3)、電子部品の放熱性が高ま
る。As is clear from the above description, the electronic component module of the present invention has the following effects. According to the first to third aspects of the present invention, the electronic component is mounted on the conductive plate, and the electronic component and the conductive plate are sealed with a resin, so that the device is downsized and the reliability is improved. In addition, since the exposed portion is provided on the conductive plate (claim 1) and the exposed portion is provided on the heat transfer member (claims 2 and 3), the heat dissipation of the electronic component is enhanced.
【0064】請求項4記載の手段によれば、銅製の導電
板およびアルミニウム製の伝熱部材を使用したので、電
子部品の放熱性が一層高まる。請求項5記載の手段によ
れば、封止部の一面に絶縁部材を介して放熱部材を設け
たので、電子部品の放熱性が一層高まる上、電子部品と
放熱部材との間の絶縁性が確保される。According to the fourth aspect of the present invention, since the conductive plate made of copper and the heat transfer member made of aluminum are used, the heat radiation of the electronic component is further enhanced. According to the means of claim 5, since the heat radiating member is provided on one surface of the sealing portion with the insulating member interposed therebetween, the heat radiating property of the electronic component is further enhanced, and the insulating property between the electronic component and the heat radiating member is improved. Secured.
【0065】請求項6記載の手段によれば、封止部の一
面に放熱部材を直接的に設けたので、電子部品の放熱性
が一層高まる上、構成が簡単化される。請求項7記載の
手段によれば、窒化アルミニウム製の伝熱部材を使用し
たので、封止部の一面に放熱部材を直接的に装着する場
合でも放熱部材と電子部品との間が絶縁される。請求項
8記載の手段によれば、シリコンゴム製の絶縁部材を使
用したので、電子部品で発生する熱が絶縁部材から放熱
部材に効率的に伝達され、電子部品の放熱性が一層高ま
る。According to the sixth aspect of the present invention, since the heat radiating member is directly provided on one surface of the sealing portion, the heat radiating property of the electronic component is further improved, and the structure is simplified. According to the seventh aspect of the present invention, since the heat transfer member made of aluminum nitride is used, the heat transfer member and the electronic component are insulated even when the heat transfer member is directly mounted on one surface of the sealing portion. . According to the means of claim 8, since the insulating member made of silicon rubber is used, heat generated in the electronic component is efficiently transmitted from the insulating member to the heat radiating member, and the heat radiating property of the electronic component is further enhanced.
【0066】請求項9ないし11記載の手段によれば、
導電板の露出部と他の部分との間に段差を設けたり(請
求項9)、導電板のうち伝熱部材に接触する部分と他の
部分との間に段差を設けたり(請求項10)、導電板の
うち伝熱部材に近接する部分と他の部分との間に段差を
設けた(請求項11)。このため、封止部の肉厚を均一
化できるので、封止部の成形時の反り等が抑えられる。
請求項12記載の手段によれば、伝熱部材の開口部を成
形型の突部に嵌合した。このため、伝熱部材が封止部の
成形時に導電板に接触または近接した状態に保持される
ので、伝熱部材の位置ずれが原因で電子部品の放熱性が
低下することが防止される。According to the measures described in claims 9 to 11,
A step may be provided between the exposed portion of the conductive plate and another portion (claim 9), or a step may be provided between a portion of the conductive plate that contacts the heat transfer member and another portion (claim 10). ), A step is provided between a portion of the conductive plate close to the heat transfer member and another portion (claim 11). For this reason, since the thickness of the sealing portion can be made uniform, warpage or the like during molding of the sealing portion can be suppressed.
According to the twelfth aspect, the opening of the heat transfer member is fitted to the projection of the mold. For this reason, the heat transfer member is kept in contact with or in close proximity to the conductive plate when the sealing portion is formed, so that the heat dissipation of the electronic component is prevented from being reduced due to the displacement of the heat transfer member.
【図1】本発明の第1実施例を示す図(電子部品の搭載
状態を示す成形基板の縦断前面図)FIG. 1 is a view showing a first embodiment of the present invention (a longitudinal front view of a molded substrate showing a mounted state of electronic components).
【図2】成形基板を示す斜視図FIG. 2 is a perspective view showing a molded substrate.
【図3】電子部品モジュールを示す前面図FIG. 3 is a front view showing the electronic component module.
【図4】電気的な接続状態を示す図FIG. 4 is a diagram showing an electrical connection state;
【図5】電子レンジの外観を示す斜視図FIG. 5 is a perspective view showing the appearance of a microwave oven.
【図6】本発明の第2実施例を示す図1相当図FIG. 6 is a view corresponding to FIG. 1, showing a second embodiment of the present invention.
【図7】伝熱部材が成形型内に収納された様子を示す断
面図FIG. 7 is a sectional view showing a state in which the heat transfer member is housed in a molding die.
【図8】本発明の第3実施例を示す図1相当図FIG. 8 is a view corresponding to FIG. 1, showing a third embodiment of the present invention.
【図9】本発明の第4実施例を示す図4相当図FIG. 9 is a view corresponding to FIG. 4, showing a fourth embodiment of the present invention.
7はマグネトロン駆動回路モジュール(電子部品モジュ
ール)、12は整流ダイオード(電子部品)、18はI
GBT(電子部品)、19はフライホイールダイオード
(電子部品)、27は高圧ダイオード(電子部品)、3
1は封止部、32は導電板、47は露出部、49は絶縁
部材、50は放熱部材、53は伝熱部材、54は接触
部、55は露出部、56は位置決め孔(開口部)、57
は成形型、58は位置決めピン(突部)、59は近接部
を示す。7 is a magnetron drive circuit module (electronic component module), 12 is a rectifier diode (electronic component), 18 is I
GBT (electronic parts), 19 is a flywheel diode (electronic part), 27 is a high-voltage diode (electronic part), 3
1 is a sealing portion, 32 is a conductive plate, 47 is an exposed portion, 49 is an insulating member, 50 is a heat radiating member, 53 is a heat transfer member, 54 is a contact portion, 55 is an exposed portion, and 56 is a positioning hole (opening). , 57
Indicates a molding die, 58 indicates a positioning pin (projection), and 59 indicates an adjacent portion.
Claims (12)
部とを備え、 前記導電板のうち前記電子部品の裏側には、前記封止部
の一面を通して外部に露出する露出部が設けられている
ことを特徴とする電子部品モジュール。A conductive plate on which an electronic component is mounted; and a resin sealing portion for sealing the conductive plate and the electronic component. An electronic component module, comprising: an exposed portion that is exposed to the outside through one surface of a sealing portion.
部と、 前記封止部内に埋設され、前記導電板のうち前記電子部
品の裏側に接触する接触部を有する伝熱部材とを備え、 前記伝熱部材のうち前記接触部の裏側には、前記封止部
の一面を通して外部に露出する露出部が設けられている
ことを特徴とする電子部品モジュール。2. A conductive plate on which an electronic component is mounted; a resin sealing portion for sealing the conductive plate and the electronic component; and the electronic component of the conductive plate embedded in the sealing portion. A heat transfer member having a contact portion that contacts the back side of the heat transfer member, wherein, on the back side of the contact portion of the heat transfer member, an exposed portion that is exposed to the outside through one surface of the sealing portion is provided. Electronic component module featuring.
部と、 前記封止部内に埋設され、前記導電板のうち前記電子部
品の裏側に非接触状態で近接する近接部を有する伝熱部
材とを備え、 前記伝熱部材のうち前記近接部の裏側には、前記封止部
の一面を通して外部に露出する露出部が設けられている
ことを特徴とする電子部品モジュール。3. A conductive plate on which an electronic component is mounted; a resin sealing portion for sealing the conductive plate and the electronic component; and the electronic component embedded in the sealing portion, the electronic component being included in the conductive plate. A heat transfer member having a proximity portion that is close to the back side of the heat transfer member in a non-contact state, and an exposed portion that is exposed to the outside through one surface of the sealing portion is provided on the back side of the proximity portion of the heat transfer member. An electronic component module, comprising:
を特徴とする請求項2または3記載の電子部品モジュー
ル。4. The electronic component module according to claim 2, wherein the conductive plate is made of copper, and the heat transfer member is made of aluminum.
熱部材が設けられていることを特徴とする請求項1〜3
のいずれかに記載の電子部品モジュール。5. A heat dissipating member is provided on one surface of the sealing portion via an insulating member.
Electronic component module according to any one of the above.
設けられていることを特徴とする請求項3記載の電子部
品モジュール。6. The electronic component module according to claim 3, wherein a heat radiation member is directly provided on one surface of the sealing portion.
形成されていることを特徴とする請求項2または3記載
の電子部品モジュール。7. The electronic component module according to claim 2, wherein the heat transfer member is made of aluminum nitride.
されていることを特徴とする請求項5記載の電子部品モ
ジュール。8. The electronic component module according to claim 5, wherein the insulating member is formed of silicon rubber.
対して段差を有していることを特徴とする請求項1記載
の電子部品モジュール。9. The electronic component module according to claim 1, wherein the exposed portion of the conductive plate has a step with respect to other portions of the conductive plate.
は、導電板の他の部分に対して段差を有していることを
特徴とする請求項2記載の電子部品モジュール。10. The electronic component module according to claim 2, wherein a portion of the conductive plate that contacts the heat transfer member has a step relative to other portions of the conductive plate.
は、導電板の他の部分に対して段差を有していることを
特徴とする請求項3記載の電子部品モジュール。11. The electronic component module according to claim 3, wherein a portion of the conductive plate close to the heat transfer member has a step relative to other portions of the conductive plate.
の成形型内に収納する際に成形型の突部に嵌合される開
口部が設けられていることを特徴とする請求項2または
3記載の電子部品モジュール。12. The heat transfer member is provided with an opening that is fitted into a protrusion of the molding die when the heat transmission member is housed in a molding die for resin sealing. The electronic component module according to claim 2.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP31952899A JP2001144225A (en) | 1999-11-10 | 1999-11-10 | Electronic part module |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP31952899A JP2001144225A (en) | 1999-11-10 | 1999-11-10 | Electronic part module |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2001144225A true JP2001144225A (en) | 2001-05-25 |
Family
ID=18111255
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP31952899A Pending JP2001144225A (en) | 1999-11-10 | 1999-11-10 | Electronic part module |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2001144225A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004128420A (en) * | 2002-10-07 | 2004-04-22 | Fuji Electric Fa Components & Systems Co Ltd | Semiconductor module and manufacturing method thereof |
JP2013089893A (en) * | 2011-10-21 | 2013-05-13 | Mitsubishi Electric Corp | Semiconductor device, semiconductor device module and semiconductor device manufacturing method |
JP2013152966A (en) * | 2012-01-24 | 2013-08-08 | Mitsubishi Electric Corp | Power semiconductor device, and method of manufacturing the same |
-
1999
- 1999-11-10 JP JP31952899A patent/JP2001144225A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004128420A (en) * | 2002-10-07 | 2004-04-22 | Fuji Electric Fa Components & Systems Co Ltd | Semiconductor module and manufacturing method thereof |
JP2013089893A (en) * | 2011-10-21 | 2013-05-13 | Mitsubishi Electric Corp | Semiconductor device, semiconductor device module and semiconductor device manufacturing method |
JP2013152966A (en) * | 2012-01-24 | 2013-08-08 | Mitsubishi Electric Corp | Power semiconductor device, and method of manufacturing the same |
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