JP2000101149A - Semiconductor light emitting element - Google Patents
Semiconductor light emitting elementInfo
- Publication number
- JP2000101149A JP2000101149A JP10270790A JP27079098A JP2000101149A JP 2000101149 A JP2000101149 A JP 2000101149A JP 10270790 A JP10270790 A JP 10270790A JP 27079098 A JP27079098 A JP 27079098A JP 2000101149 A JP2000101149 A JP 2000101149A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor light
- light emitting
- epoxy resin
- hole
- reflector case
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 55
- 239000003822 epoxy resin Substances 0.000 claims abstract description 31
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 31
- 238000007789 sealing Methods 0.000 claims abstract description 26
- 230000009477 glass transition Effects 0.000 claims abstract description 15
- 239000004593 Epoxy Substances 0.000 claims 1
- 229920005989 resin Polymers 0.000 claims 1
- 239000011347 resin Substances 0.000 claims 1
- 239000000758 substrate Substances 0.000 abstract description 16
- 238000010438 heat treatment Methods 0.000 abstract description 11
- 239000002184 metal Substances 0.000 abstract description 8
- 238000007747 plating Methods 0.000 abstract description 3
- 238000005336 cracking Methods 0.000 abstract description 2
- 238000001746 injection moulding Methods 0.000 abstract description 2
- 229920000642 polymer Polymers 0.000 abstract 1
- 229920000106 Liquid crystal polymer Polymers 0.000 description 7
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 description 7
- 229920003002 synthetic resin Polymers 0.000 description 4
- 239000000057 synthetic resin Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- 239000004020 conductor Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、リフレクタケ−ス
内に透光性のエポキシ樹脂を充填して封止体を形成し
た、高輝度の半導体発光素子に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a high-luminance semiconductor light emitting device in which a light-transmitting epoxy resin is filled in a reflector case to form a sealing body.
【０００２】[0002]
【従来の技術】発光ダイオ−ド（ＬＥＤ）等の半導体発
光チップを用いた半導体発光素子として、従来、図５、
図６に示されているような構成のものが知られている。
図５は、半導体発光素子１の平面図、図６は図５の矢視
Ｘ１−Ｘ２方向からみた断面図である。図５において、
基板２の表面に導電材料よりなる一対の電極パタ−ン
４、５が形成される。半円形の切欠部７、８には、メッ
キ層等の導電膜が形成されて基板の裏面に延在し、基板
２の表面に形成される一対の電極パタ−ン４、５と電気
的に接続されている。2. Description of the Related Art As a semiconductor light emitting device using a semiconductor light emitting chip such as a light emitting diode (LED), FIG.
A configuration as shown in FIG. 6 is known.
FIG. 5 is a plan view of the semiconductor light emitting device 1, and FIG. 6 is a cross-sectional view taken along the line X1-X2 in FIG. In FIG.
A pair of electrode patterns 4 and 5 made of a conductive material are formed on the surface of the substrate 2. A conductive film such as a plating layer is formed in the semicircular notches 7 and 8 and extends to the back surface of the substrate, and electrically connects to the pair of electrode patterns 4 and 5 formed on the surface of the substrate 2. It is connected.
【０００３】一対の電極パタ−ンの一方の電極パタ−ン
５には矩形状のパッド部５ａを形成し、パッド部５ａの
上に半導体発光チップ３を搭載する。半導体発光チップ
３は、他方の電極パタ−ン４と金属線６によりワイヤ−
ボンデングされる。半導体発光チップ３と金属線６は、
図６の半導体発光素子１の断面図に示すように、透光性
の合成樹脂、例えばエポキシ樹脂による封止体９で封止
される。このような構成の半導体発光素子１は、プリン
ト基板等に表面実装され、基板の裏面に形成された導電
膜とプリント基板の回路パタ−ンが電気的に接続され
る。[0003] A rectangular pad portion 5a is formed on one electrode pattern 5 of the pair of electrode patterns, and the semiconductor light emitting chip 3 is mounted on the pad portion 5a. The semiconductor light emitting chip 3 is wire-connected by the other electrode pattern 4 and the metal wire 6.
Bonded. The semiconductor light emitting chip 3 and the metal wire 6
As shown in the sectional view of the semiconductor light emitting device 1 in FIG. 6, the semiconductor light emitting device 1 is sealed with a sealing body 9 made of a light-transmitting synthetic resin, for example, an epoxy resin. The semiconductor light emitting element 1 having such a configuration is surface-mounted on a printed board or the like, and a conductive pattern formed on the back surface of the board is electrically connected to a circuit pattern of the printed board.
【０００４】図５、図６に示した構成の半導体発光素子
は、半導体発光チップ３を基板２側を除く五面で透光性
の合成樹脂を用いた封止体９で封止している。このた
め、半導体発光チップ３の出力光が封止体９の側面から
も放出される。したがって、プリント基板等に表面実装
された半導体発光チップ３の前方（図６に示した封止体
９の図示上方）の中心光度が低下し所定の輝度が得られ
ないという問題がある。In the semiconductor light-emitting device having the structure shown in FIGS. 5 and 6, the semiconductor light-emitting chip 3 is sealed with a sealing member 9 made of a light-transmitting synthetic resin on five surfaces except the substrate 2 side. . Therefore, the output light of the semiconductor light emitting chip 3 is also emitted from the side surface of the sealing body 9. Therefore, there is a problem in that the central luminous intensity in front of the semiconductor light emitting chip 3 surface-mounted on a printed circuit board (above the sealing body 9 shown in FIG. 6) is reduced, and a predetermined luminance cannot be obtained.
【０００５】このような問題に対処するために、半導体
発光チップ３の周囲を液晶ポリマ等の光反射性の部材か
らなるリフレクタケ−スで囲み、リフレクタケ−スに形
成されている貫通孔に透光性の合成樹脂を充填して半導
体発光チップ３を封止する構成の半導体発光素子が開発
されている。In order to cope with such a problem, the periphery of the semiconductor light emitting chip 3 is surrounded by a reflector case made of a light-reflective member such as a liquid crystal polymer, and light is transmitted through a through hole formed in the reflector case. A semiconductor light-emitting element having a configuration in which a semiconductor light-emitting chip 3 is sealed by filling with a synthetic resin having a property has been developed.
【０００６】図７は、図５の構成においてこのようなリ
フレクタケ−スを設けた半導体発光素子１ａの例を示す
断面図である。図７は図５の矢視Ｙ１−Ｙ２方向からみ
た断面図に相当する。図７に示すように、リフレクタケ
−ス１０は底部の幅が狭く、上部の幅を広くした傾斜状
の貫通孔を形成し、この貫通孔内に配置された半導体発
光チップ３を透光性の合成樹脂からなる封止体９で封止
している。このようなリフレクタケ−ス１０を設けるこ
とにより、半導体発光チップ３の出力光を効率よく前方
に集光して中心光度を向上させ、高い輝度の半導体発光
素子が得られている。FIG. 7 is a sectional view showing an example of a semiconductor light emitting device 1a provided with such a reflector case in the configuration of FIG. FIG. 7 corresponds to a cross-sectional view as viewed from the direction of arrows Y1-Y2 in FIG. As shown in FIG. 7, the reflector case 10 has an inclined through hole having a narrow bottom portion and a wide upper portion. The semiconductor light emitting chip 3 disposed in the through hole has a light transmitting property. It is sealed with a sealing body 9 made of a synthetic resin. By providing such a reflector case 10, the output light of the semiconductor light emitting chip 3 is efficiently converged forward and the central luminous intensity is improved, and a semiconductor light emitting device with high luminance is obtained.
【０００７】図７に示すような構成の半導体発光素子１
ａは、プリント基板等に表面実装する際にリフロ−炉で
熱処理がなされる。リフロ−炉による熱処理において
は、半導体発光素子１ａの周囲温度は２３０〜２５０℃
となる。このため、封止体９に用いるエポキシ樹脂は、
ガラス転移温度が１００〜１２０℃と比較的高い温度の
材質を用いて、封止性を高めている。A semiconductor light emitting device 1 having a structure as shown in FIG.
In the case of a, heat treatment is performed in a reflow furnace when surface mounting is performed on a printed circuit board or the like. In the heat treatment in the reflow furnace, the ambient temperature of the semiconductor light emitting device 1a is 230 to 250 ° C.
Becomes For this reason, the epoxy resin used for the sealing body 9 is
The sealing property is enhanced by using a material having a relatively high glass transition temperature of 100 to 120 ° C.
【０００８】ところで、ガラス転移温度が１００〜１２
０℃に設定されたエポキシ樹脂を用いた封止体９と、液
晶ポリマ等の光反射性の部材からなるリフレクタケ−ス
１０とは、線膨張率が相違している。例えば、エポキシ
樹脂の線膨張率は５〜７×１０−５（ｄｅｇ−１）であ
り、液晶ポリマの線膨張率は１．２〜２．０×１０−５
（ｄｅｇ−１）である。Incidentally, the glass transition temperature is 100 to 12
The linear expansion coefficient of the sealing body 9 using an epoxy resin set at 0 ° C. is different from that of the reflector case 10 made of a light-reflective member such as a liquid crystal polymer. For example, the linear expansion coefficient of the epoxy resin is 5 to 7 × 10 −5 (deg−1), and the linear expansion coefficient of the liquid crystal polymer is 1.2 to 2.0 × 10 −5.
(Deg-1).
【０００９】エポキシ樹脂のガラス転移温度が１００〜
１２０℃に設定されているので、リフロ−炉による熱処
理の際に前記ガラス転移温度付近まで急激に温度上昇し
ても、エポキシ樹脂はまだ固体状態のままである。この
ため、線膨張率が大きなエポキシ樹脂を用いた封止体９
には、膨張に伴い矢視Ｔ方向に外方に向けて伸びようと
する力が作用する。一方線膨張率が小さな液晶ポリマを
用いたリフレクタケ−ス１０の伸びようとする力は微弱
であるために、封止体９とリフレクタケ−ス１０との間
では伸びようとする力の差異による歪み力が発生する。The glass transition temperature of the epoxy resin is 100 to
Since the temperature is set at 120 ° C., the epoxy resin still remains in a solid state even if the temperature rises to near the glass transition temperature during the heat treatment in the reflow furnace. Therefore, the sealing body 9 using an epoxy resin having a large linear expansion coefficient.
, A force is exerted to expand outward in the direction of arrow T with the expansion. On the other hand, since the force to expand the reflector case 10 using the liquid crystal polymer having a small linear expansion coefficient is weak, distortion due to the difference in the force to expand between the sealing body 9 and the reflector case 10 is caused. Force is generated.
【００１０】[0010]
【発明が解決しようとする課題】このように、封止体９
とリフレクタケ−ス１０の線膨張率が相違していること
に起因して、リフロ−炉による熱処理の際に両者の間に
歪み力が発生するので、互いに接している二物体の間で
図７のＡ１、Ａ２に示すようなクラッキングが生じる。
このため、封止体９の機械的強度が劣化するという問題
があった。As described above, the sealing body 9
Since the linear expansion coefficient of the reflector case 10 and that of the reflector case 10 are different from each other, a strain force is generated between the two during the heat treatment in the reflow furnace. Cracking as shown in A1 and A2.
For this reason, there was a problem that the mechanical strength of the sealing body 9 deteriorated.
【００１１】本発明はこのような問題に鑑みてなされた
ものであり、熱処理時にリフレクタケ−スの貫通孔内に
充填したエポキシ樹脂のクラック発生を防止した半導体
発光素子の提供を目的とする。The present invention has been made in view of such a problem, and an object of the present invention is to provide a semiconductor light emitting device in which a crack of an epoxy resin filled in a through hole of a reflector case during heat treatment is prevented.
【００１２】[0012]
【課題を解決するための手段】本発明の上記目的は、請
求項１に係る発明において半導体発光素子を、一対の電
極と、一対の電極に電気的に接続された半導体発光チッ
プと、半導体発光チップの外周を囲む貫通孔を形成した
リフレクタケ−スと、貫通孔に透光性のエポキシ樹脂を
充填して半導体発光チップを封止する封止体とを備えた
半導体発光チップにおいて、前記エポキシ樹脂のガラス
転移温度を６０℃以下に設定した構成とすることにより
達成される。SUMMARY OF THE INVENTION The object of the present invention is to provide a semiconductor light emitting device according to the first aspect of the present invention, comprising: a pair of electrodes; a semiconductor light emitting chip electrically connected to the pair of electrodes; A semiconductor light emitting chip comprising: a reflector case having a through hole surrounding an outer periphery of the chip; and a sealing body for sealing the semiconductor light emitting chip by filling the through hole with a translucent epoxy resin. Is achieved by setting the glass transition temperature of the sample to 60 ° C. or lower.
【００１３】本発明においては、リフレクタケ−スの貫
通孔内に充填したエポキシ樹脂のガラス転移温度を６０
℃以下に設定しているので、熱処理時の温度上昇により
周囲温度が１００℃程度に達するとエポキシ樹脂はゴム
状に軟化した状態に変化する。このため膨張を吸収して
外方に向けて伸びようとする力を抑制し、エポキシ樹脂
のクラック発生を防止することができる。In the present invention, the glass transition temperature of the epoxy resin filled in the through-hole of the reflector case is set to 60.
Since the temperature is set to not more than 100 ° C., when the ambient temperature reaches about 100 ° C. due to the temperature rise during the heat treatment, the epoxy resin changes to a rubbery softened state. For this reason, the force which tends to expand outward by absorbing the expansion can be suppressed, and the occurrence of cracks in the epoxy resin can be prevented.
【００１４】[0014]
【発明の実施の形態】以下、本発明の実施の形態につい
て図を参照して説明する。図３は本発明の実施の形態の
一例を示す半導体発光素子１ａの斜視図、図４は基板と
リフレクタケ−スとの位置関係を示す分解斜視図であ
る。図３、図４において、図５〜図７で説明した従来の
半導体発光素子と同じ部分、または対応するところには
同一の符号を付しており、詳細な説明は省略する。Embodiments of the present invention will be described below with reference to the drawings. FIG. 3 is a perspective view of a semiconductor light emitting device 1a showing an example of the embodiment of the present invention, and FIG. 4 is an exploded perspective view showing a positional relationship between a substrate and a reflector case. 3 and 4, the same parts as those of the conventional semiconductor light emitting device described with reference to FIGS. 5 to 7 or corresponding parts are denoted by the same reference numerals, and detailed description thereof will be omitted.
【００１５】図５の例で説明したように、基板２の表面
に一対の電極パタ−ン４、５を形成し、一方の電極パタ
−ン５の矩形状のパッド部５ａ上に半導体発光チップ３
を搭載する。半導体発光チップ３は、他方の電極パタ−
ン４と金属線６によりワイヤ−ボンデングされる。次
に、リフレクタケ−ス１０を基板上に取り付ける。As described in the example of FIG. 5, a pair of electrode patterns 4 and 5 are formed on the surface of the substrate 2, and a semiconductor light emitting chip is formed on a rectangular pad portion 5a of one of the electrode patterns 5. 3
With. The semiconductor light emitting chip 3 is connected to the other electrode pattern.
Wire 4 and the metal wire 6. Next, the reflector case 10 is mounted on the substrate.
【００１６】図４に示すように、リフレクタケ−ス１０
は中央部に貫通孔１１を形成している。この貫通孔１１
は、上面の外径１０ａが底面の外径１０ｂよりも大きく
形成された逆円錐台状の形状としている。As shown in FIG. 4, the reflector case 10
Has a through hole 11 in the center. This through hole 11
Has an inverted truncated cone shape in which the outer diameter 10a of the top surface is larger than the outer diameter 10b of the bottom surface.
【００１７】このようなリフレクタケ−ス１０は、例え
ば液晶ポリマを射出成形することにより形成される。貫
通孔１１の内表面には金属メッキを施すことにより半導
体発光チップ３からの出力光を反射させて効率よく前方
に集光することができる。また、リフレクタケ−ス１０
としてＳＵＳ等の金属プレ−トを絞り加工したものを用
いることもできる。Such a reflector case 10 is formed, for example, by injection molding a liquid crystal polymer. By applying metal plating to the inner surface of the through hole 11, the output light from the semiconductor light emitting chip 3 can be reflected and efficiently collected forward. In addition, the reflector case 10
A metal plate such as SUS drawn can also be used.
【００１８】次に、リフレクタケ−ス１０の貫通孔１１
内に透光性のエポキシ樹脂を充填して封止体９を形成す
る。封止体９は、図３に示すようにリフレクタケ−ス１
０の表面を覆うようにして形成される。このため、リフ
レクタケ−ス１０は基板２上に安定して取り付けられ
る。Next, the through-hole 11 of the reflector case 10
The inside is filled with a translucent epoxy resin to form a sealing body 9. The sealing body 9 is, as shown in FIG.
0 is formed so as to cover the surface. For this reason, the reflector case 10 is stably mounted on the substrate 2.
【００１９】図３の例では、封止体９を形成するエポキ
シ樹脂は温度が４５℃以上になるとガラス転移するが、
ガラス転移温度が低いと硬性が小さく封止体９に変形が
生ずる。このため、硬性をある程度大きくして封止体９
の変形を防止し、しかも前記熱処理時の歪みによるクラ
ックの発生を防止するように、本発明においてはエポキ
シ樹脂のガラス転移温度を６０℃以下に設定している。In the example of FIG. 3, the epoxy resin forming the sealing body 9 undergoes a glass transition when the temperature becomes 45 ° C. or higher.
When the glass transition temperature is low, the hardness is low and the sealing body 9 is deformed. For this reason, the hardness is increased to some extent and the sealing body 9 is formed.
In the present invention, the glass transition temperature of the epoxy resin is set to 60 ° C. or less so as to prevent the deformation of the epoxy resin and to prevent the occurrence of cracks due to the distortion during the heat treatment.
【００２０】このように、ガラス転移温度を低温に設定
しているので、リフロ−炉による熱処理の際の急激な温
度上昇により、半導体発光素子１ａの周囲温度がエポキ
シ樹脂のガラス転移温度を超えて１００℃程度に達する
と、エポキシ樹脂はゴム状に軟化した状態に変化する。As described above, since the glass transition temperature is set to a low temperature, the ambient temperature of the semiconductor light emitting element 1a exceeds the glass transition temperature of the epoxy resin due to a rapid temperature rise during the heat treatment in the reflow furnace. When the temperature reaches about 100 ° C., the epoxy resin changes to a rubbery softened state.
【００２１】前記のように温度上昇により線膨張率が大
きなエポキシ樹脂には外方に伸びようとする力が作用す
るが、周囲温度が１００℃程度に達するとエポキシ樹脂
はゴム状に軟化した状態に変化するので、膨張を吸収し
て外方に向けて伸びようとする力を抑制する。このた
め、エポキシ樹脂を用いた封止体９とリフレクタケ−ス
１０との間ではクラックは発生しない。As described above, the epoxy resin having a large coefficient of linear expansion due to the temperature rise exerts a force to expand outward, but when the ambient temperature reaches about 100 ° C., the epoxy resin is softened into a rubbery state. , And suppresses the force that tends to expand outward by absorbing the expansion. For this reason, no crack occurs between the sealing body 9 using epoxy resin and the reflector case 10.
【００２２】図２は本発明の別の実施の形態である半導
体発光素子１ｂを一部透視して示す斜視図、図１は図２
の矢視Ｚ１−Ｚ２方向からみた断面図である。図１、図
２に示す半導体発光素子１ｂは、基板２に長孔状のスル
−ホ−ルを形成し、基板の幅方向全長に渡り形成された
電極パタ−ン４ｘ、５ｘは当該長孔状のスル−ホ−ルを
通して基板２の裏面に延在させるものである。FIG. 2 is a perspective view showing a semiconductor light emitting element 1b according to another embodiment of the present invention in a partially transparent manner, and FIG.
FIG. 3 is a cross-sectional view as viewed from the arrow Z1-Z2 direction. The semiconductor light emitting device 1b shown in FIGS. 1 and 2 has an elongated through hole formed in the substrate 2 and the electrode patterns 4x and 5x formed over the entire length of the substrate in the width direction. It extends to the back surface of the substrate 2 through the through hole.
【００２３】上記の例はいずれも基板上に形成された一
対の電極パタ−ンの一方に半導体発光チップを搭載して
いるが、本発明はこのような構成に限定されるものでは
なく、リ−ドフレ−ム上に半導体発光チップを搭載する
半導体発光素子にも適用できる。In each of the above examples, a semiconductor light emitting chip is mounted on one of a pair of electrode patterns formed on a substrate, but the present invention is not limited to such a configuration. -It can also be applied to a semiconductor light emitting device having a semiconductor light emitting chip mounted on a frame.
【００２４】[0024]
【発明の効果】以上説明したように、本発明においては
リフレクタケ−スの貫通孔内に充填したエポキシ樹脂の
ガラス転移温度を６０℃以下に設定しているので、熱処
理時の温度上昇により周囲温度が１００℃程度に達する
とエポキシ樹脂はゴム状に軟化した状態に変化する。こ
のため膨張を吸収して外方に向けて伸びようとする力を
抑制し、エポキシ樹脂のクラック発生を防止することが
できる。As described above, in the present invention, since the glass transition temperature of the epoxy resin filled in the through-hole of the reflector case is set to 60 ° C. or less, the ambient temperature is increased by the temperature rise during the heat treatment. When the temperature reaches about 100 ° C., the epoxy resin changes to a rubbery softened state. For this reason, the force which tends to expand outward by absorbing the expansion can be suppressed, and the occurrence of cracks in the epoxy resin can be prevented.
【図１】本発明の実施の形態に係る半導体発光素子を示
す断面図である。FIG. 1 is a sectional view showing a semiconductor light emitting device according to an embodiment of the present invention.
【図２】本発明の実施の形態に係る半導体発光素子を一
部透視して示す斜視図である。FIG. 2 is a perspective view showing a semiconductor light emitting device according to an embodiment of the present invention in a partially transparent manner.
【図３】本発明の実施の形態に係る半導体発光素子を示
す斜視図である。FIG. 3 is a perspective view showing a semiconductor light emitting device according to an embodiment of the present invention.
【図４】基板とリフレクタケ−スとの位置関係を示す分
解斜視図である。FIG. 4 is an exploded perspective view showing a positional relationship between a substrate and a reflector case.
【図５】従来の半導体発光素子の平面図である。FIG. 5 is a plan view of a conventional semiconductor light emitting device.
【図６】従来の半導体発光素子の断面図である。FIG. 6 is a sectional view of a conventional semiconductor light emitting device.
【図７】従来の半導体発光素子の断面図である。FIG. 7 is a sectional view of a conventional semiconductor light emitting device.
１、１ａ、１ｂ 半導体発光素子 ２ 基板 ３ 半導体発光チップ ４、５ 電極パタ−ン ６ 金属線 ９ 封止体 １０ リフレクタケ−ス DESCRIPTION OF SYMBOLS 1, 1a, 1b Semiconductor light emitting element 2 Substrate 3 Semiconductor light emitting chip 4, 5 Electrode pattern 6 Metal wire 9 Sealing body 10 Reflector case
─────────────────────────────────────────────────────
────────────────────────────────────────────────── ───
【手続補正書】[Procedure amendment]
【提出日】平成１０年９月２８日（１９９８．９．２
８）[Submission date] September 28, 1998 (1998.9.2)
8)
【手続補正１】[Procedure amendment 1]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】０００８[Correction target item name] 0008
【補正方法】変更[Correction method] Change
【補正内容】[Correction contents]
【０００８】ところで、ガラス転移温度が１００〜１２
０℃に設定されたエポキシ樹脂を用いた封止体９と、液
晶ポリマ等の光反射性の部材からなるリフレクタケース
１０とは、線膨張率が相違している。例えば、エポキシ
樹脂の線膨張率は５〜７×１０ −５ （ｄｅｇ −１ ）であ
り、液晶ポリマの線膨張率は１．２〜２．０×１０ −５
（ｄｅｇ −１ ）である。Incidentally, the glass transition temperature is 100 to 12
The linear expansion coefficient differs between the sealing body 9 using an epoxy resin set at 0 ° C. and the reflector case 10 made of a light-reflective member such as a liquid crystal polymer. For example, the linear expansion coefficient of the epoxy resin is 5 to 7 × 10 −5 (deg −1 ), and the linear expansion coefficient of the liquid crystal polymer is 1.2 to 2.0 × 10 −5.
(Deg −1 ).
Claims (1)
続された半導体発光チップと、半導体発光チップの外周
を囲む貫通孔を形成したリフレクタケ−スと、貫通孔に
透光性のエポキシ樹脂を充填して半導体発光チップを封
止する封止体とを備えた半導体発光チップにおいて、前
記エポキシ樹脂のガラス転移温度を６０℃以下に設定し
たことを特徴とする半導体発光素子。1. A pair of electrodes, a semiconductor light emitting chip electrically connected to the pair of electrodes, a reflector case having a through hole surrounding an outer periphery of the semiconductor light emitting chip, and a translucent epoxy in the through hole. A semiconductor light emitting device comprising: a semiconductor light emitting chip including a sealing body for filling the resin and sealing the semiconductor light emitting chip, wherein the glass transition temperature of the epoxy resin is set to 60 ° C. or less.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10270790A JP2000101149A (en) | 1998-09-25 | 1998-09-25 | Semiconductor light emitting element |
| DE1999145919 DE19945919A1 (en) | 1998-09-25 | 1999-09-24 | Light emitting semiconductor device has an epoxy resin encapsulation of low glass transition temperature to reduce crack-inducing thermal stresses on surface mounting of the device e.g. on a wiring board |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10270790A JP2000101149A (en) | 1998-09-25 | 1998-09-25 | Semiconductor light emitting element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2000101149A true JP2000101149A (en) | 2000-04-07 |
Family
ID=17491047
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10270790A Withdrawn JP2000101149A (en) | 1998-09-25 | 1998-09-25 | Semiconductor light emitting element |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP2000101149A (en) |
| DE (1) | DE19945919A1 (en) |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002374005A (en) * | 2001-04-10 | 2002-12-26 | Toshiba Corp | Optical semiconductor device |
| US6741029B2 (en) | 2001-03-30 | 2004-05-25 | Sumitomo Electric Industries, Ltd. | Light emission apparatus and method of fabricating the same |
| JP2005039100A (en) * | 2003-07-16 | 2005-02-10 | Matsushita Electric Works Ltd | Circuit component for highly thermally conductive light emitting device, and high heat dissipation module |
| JP2005311314A (en) * | 2004-03-26 | 2005-11-04 | Matsushita Electric Ind Co Ltd | Module for mounting led, led module, method of manufacturing module for mounting led, and method of manufacturing led module |
| JP2005538550A (en) * | 2002-09-04 | 2005-12-15 | クリー インコーポレイテッド | Power surface mounted light emitting die package |
| KR100567550B1 (en) * | 2002-05-29 | 2006-04-05 | 서울반도체 주식회사 | Pink Light Emitting Diode and Methode for Manufacturing the same |
| KR101062935B1 (en) | 2004-03-17 | 2011-09-08 | 니뽄 고어-텍스 인크. | Method of manufacturing circuit board for light emitting body, circuit board precursor for light emitting body, circuit board for light emitting body, and light emitting body |
| US8071987B2 (en) | 2006-09-29 | 2011-12-06 | Osram Opto Semiconductors Gmbh | Housing for an optoelectronic component, optoelectronic component, and method for producing a housing for an optoelectronic component |
| US8530915B2 (en) | 2002-09-04 | 2013-09-10 | Cree, Inc. | Power surface mount light emitting die package |
| US8608349B2 (en) | 2002-09-04 | 2013-12-17 | Cree, Inc. | Power surface mount light emitting die package |
| KR101526087B1 (en) * | 2010-12-15 | 2015-06-04 | 오스람 옵토 세미컨덕터스 게엠베하 | Housing and method for producing a housing for an optoelectronic component |
| JP2022000705A (en) * | 2017-09-04 | 2022-01-04 | ソウル セミコンダクター カンパニー リミテッドSeoul Semiconductor Co., Ltd. | Display device |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100436302B1 (en) * | 2000-09-29 | 2004-07-02 | 오므론 가부시키가이샤 | Optical Device for an Optical Element and Apparatus Employing the Device |
| DE10139723A1 (en) * | 2001-08-13 | 2003-03-13 | Osram Opto Semiconductors Gmbh | Radiation-emitting chip and radiation-emitting component |
| US6995402B2 (en) * | 2003-10-03 | 2006-02-07 | Lumileds Lighting, U.S., Llc | Integrated reflector cup for a light emitting device mount |
| DE102005028748A1 (en) | 2004-10-25 | 2006-05-04 | Osram Opto Semiconductors Gmbh | Electromagnetic radiation emitting semiconductor device and device package |
| DE102004058917B4 (en) * | 2004-12-07 | 2007-01-04 | Harvatek Corp. | Housing arrangement for a semiconductor |
| US7980743B2 (en) | 2005-06-14 | 2011-07-19 | Cree, Inc. | LED backlighting for displays |
| DE102006046301A1 (en) * | 2006-09-29 | 2008-04-03 | Osram Opto Semiconductors Gmbh | Optical element, has base body, which contains basic material, and filling body, which contains filling material, where filling body adheres to base body |
| ITUD20080076A1 (en) * | 2008-04-08 | 2009-10-09 | Gpe Srl | LIGHTING DEVICE, AND ITS MANUFACTURING PROCEDURE |
-
1998
- 1998-09-25 JP JP10270790A patent/JP2000101149A/en not_active Withdrawn
-
1999
- 1999-09-24 DE DE1999145919 patent/DE19945919A1/en not_active Withdrawn
Cited By (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6741029B2 (en) | 2001-03-30 | 2004-05-25 | Sumitomo Electric Industries, Ltd. | Light emission apparatus and method of fabricating the same |
| JP2002374005A (en) * | 2001-04-10 | 2002-12-26 | Toshiba Corp | Optical semiconductor device |
| KR100567550B1 (en) * | 2002-05-29 | 2006-04-05 | 서울반도체 주식회사 | Pink Light Emitting Diode and Methode for Manufacturing the same |
| JP4731906B2 (en) * | 2002-09-04 | 2011-07-27 | クリー インコーポレイテッド | Power surface mounted light emitting die package |
| US8608349B2 (en) | 2002-09-04 | 2013-12-17 | Cree, Inc. | Power surface mount light emitting die package |
| US8710514B2 (en) | 2002-09-04 | 2014-04-29 | Cree, Inc. | Power surface mount light emitting die package |
| JP2011129945A (en) * | 2002-09-04 | 2011-06-30 | Cree Inc | Power surface mount light emitting die package |
| JP2011129948A (en) * | 2002-09-04 | 2011-06-30 | Cree Inc | Power surface mount light emitting die package |
| JP2011129947A (en) * | 2002-09-04 | 2011-06-30 | Cree Inc | Power surface mount light emitting die package |
| JP2011129946A (en) * | 2002-09-04 | 2011-06-30 | Cree Inc | Power surface mount light emitting die package |
| JP2005538550A (en) * | 2002-09-04 | 2005-12-15 | クリー インコーポレイテッド | Power surface mounted light emitting die package |
| US8530915B2 (en) | 2002-09-04 | 2013-09-10 | Cree, Inc. | Power surface mount light emitting die package |
| JP2005039100A (en) * | 2003-07-16 | 2005-02-10 | Matsushita Electric Works Ltd | Circuit component for highly thermally conductive light emitting device, and high heat dissipation module |
| KR101062935B1 (en) | 2004-03-17 | 2011-09-08 | 니뽄 고어-텍스 인크. | Method of manufacturing circuit board for light emitting body, circuit board precursor for light emitting body, circuit board for light emitting body, and light emitting body |
| JP2005311314A (en) * | 2004-03-26 | 2005-11-04 | Matsushita Electric Ind Co Ltd | Module for mounting led, led module, method of manufacturing module for mounting led, and method of manufacturing led module |
| US8071987B2 (en) | 2006-09-29 | 2011-12-06 | Osram Opto Semiconductors Gmbh | Housing for an optoelectronic component, optoelectronic component, and method for producing a housing for an optoelectronic component |
| US20120032362A1 (en) * | 2006-09-29 | 2012-02-09 | Osram Opto Semiconductors Gmbh | Housing for an Optoelectronic Component, Optoelectronic Component, and Method for Producing a Housing for an Optoelectronic Component |
| US8476114B2 (en) | 2006-09-29 | 2013-07-02 | Osram Opto Semiconductors Gmbh | Housing for an optoelectronic component, optoelectronic component, and method for producing a housing for an optoelectronic component |
| KR101526087B1 (en) * | 2010-12-15 | 2015-06-04 | 오스람 옵토 세미컨덕터스 게엠베하 | Housing and method for producing a housing for an optoelectronic component |
| JP2022000705A (en) * | 2017-09-04 | 2022-01-04 | ソウル セミコンダクター カンパニー リミテッドSeoul Semiconductor Co., Ltd. | Display device |
| JP7178466B2 (en) | 2017-09-04 | 2022-11-25 | ソウル セミコンダクター カンパニー リミテッド | Display device |
| US12094859B2 (en) | 2017-09-04 | 2024-09-17 | Seoul Semiconductor Co., Ltd. | Display device and method for manufacturing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| DE19945919A1 (en) | 2000-03-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2000101149A (en) | Semiconductor light emitting element | |
| US6835960B2 (en) | Light emitting diode package structure | |
| CN105895792B (en) | Light emitting assembly | |
| JP4934352B2 (en) | High power LED package and high power LED package manufacturing method | |
| USRE42112E1 (en) | Chip light emitting diode and fabrication method thereof | |
| JP5596901B2 (en) | Power light emitting die package having a reflective lens and method of manufacturing the same | |
| US7161187B2 (en) | Light emitting diode and manufacturing method thereof | |
| JP6504193B2 (en) | Light emitting device | |
| JP5750040B2 (en) | Optoelectronic semiconductor components | |
| JP5391468B2 (en) | LED package | |
| JP4774365B2 (en) | High power diode holder structure and package combination | |
| KR20050092300A (en) | High power led package | |
| JP2005294736A (en) | Manufacturing method for semiconductor light emitting device | |
| JP2002368277A (en) | Chip semiconductor light-emitting device | |
| TW550770B (en) | Optical integrated circuit element package and process for making the same | |
| JP2010080640A (en) | Surface-mounted light emitting diode | |
| KR100653645B1 (en) | Packcage of light emitting device and method of manufacturing the package | |
| JP2006156643A (en) | Surface-mounted light-emitting diode | |
| JPH10107326A (en) | Side-face light-emitting type led lamp | |
| CN209896436U (en) | Surface-mounted laser emitting device and module | |
| JPH04338795A (en) | Light emitting display plate and its manufacture | |
| JP4679917B2 (en) | Semiconductor light emitting device | |
| JP3100687U (en) | High brightness light emitting diode | |
| KR101109032B1 (en) | LED backlight unit | |
| KR200403653Y1 (en) | A Surface mounting type high brightness light emitting diode |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20041126 |
|
| A761 | Written withdrawal of application |
Free format text: JAPANESE INTERMEDIATE CODE: A761 Effective date: 20070404 |