IT949790B - Procedimento per preparare sottili strati di tantalio - Google Patents

Procedimento per preparare sottili strati di tantalio

Info

Publication number
IT949790B
IT949790B IT21293/72A IT2129372A IT949790B IT 949790 B IT949790 B IT 949790B IT 21293/72 A IT21293/72 A IT 21293/72A IT 2129372 A IT2129372 A IT 2129372A IT 949790 B IT949790 B IT 949790B
Authority
IT
Italy
Prior art keywords
tantalum
procedure
thin layers
preparing thin
preparing
Prior art date
Application number
IT21293/72A
Other languages
English (en)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Application granted granted Critical
Publication of IT949790B publication Critical patent/IT949790B/it

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14Metallic material, boron or silicon
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/702Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof of thick-or thin-film circuits or parts thereof
    • H01L21/707Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof of thick-or thin-film circuits or parts thereof of thin-film circuits or parts thereof
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N97/00Electric solid-state thin-film or thick-film devices, not otherwise provided for

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)
  • Chemical Vapour Deposition (AREA)
IT21293/72A 1971-03-08 1972-03-02 Procedimento per preparare sottili strati di tantalio IT949790B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2110987A DE2110987B2 (de) 1971-03-08 1971-03-08 Verfahren zum Herstellen von dünnen Schichten aus Tantal

Publications (1)

Publication Number Publication Date
IT949790B true IT949790B (it) 1973-06-11

Family

ID=5800841

Family Applications (1)

Application Number Title Priority Date Filing Date
IT21293/72A IT949790B (it) 1971-03-08 1972-03-02 Procedimento per preparare sottili strati di tantalio

Country Status (7)

Country Link
US (1) US3808109A (it)
BE (1) BE780373A (it)
DE (1) DE2110987B2 (it)
FR (1) FR2128643B1 (it)
GB (1) GB1349833A (it)
IT (1) IT949790B (it)
NL (1) NL7202035A (it)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4046712A (en) * 1972-11-30 1977-09-06 United Kingdom Atomic Energy Authority Catalysts sputtered on substantially nonporous low surface area particulate supports
US3874922A (en) * 1973-08-16 1975-04-01 Boeing Co Tantalum thin film resistors by reactive evaporation
US4036708A (en) * 1976-05-13 1977-07-19 Bell Telephone Laboratories, Incorporated Technique for nucleating b.c.c. tantalum films on insulating substrates
JPS5671821A (en) 1979-11-14 1981-06-15 Hitachi Ltd Substrate for magnetic disc and its manufacture
EP0582387B1 (en) * 1992-08-05 1999-05-26 Sharp Kabushiki Kaisha Metallic wiring board and method for producing the same
MXPA06010834A (es) * 2004-03-24 2007-03-23 Starck H C Inc Metodos de formar peliculas de tantalo alfa y beta con microestructuras nuevas y controladas.
WO2007143962A1 (de) * 2006-06-16 2007-12-21 Siemens Aktiengesellschaft Thermisch beanspruchbares bauteil mit einer korrosionsschicht und verfahren zu dessen herstellung
CN113235060B (zh) * 2021-05-12 2023-01-06 中国兵器工业第五九研究所 一种全α相钽涂层的制备方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1665571B1 (de) * 1966-03-08 1971-09-09 Siemens Ag Verfahren zur herstellung von duennschichtbaugruppen der elektronik

Also Published As

Publication number Publication date
FR2128643A1 (it) 1972-10-20
DE2110987B2 (de) 1978-11-16
BE780373A (fr) 1972-07-03
DE2110987A1 (de) 1972-09-14
FR2128643B1 (it) 1977-04-01
US3808109A (en) 1974-04-30
NL7202035A (it) 1972-09-12
GB1349833A (en) 1974-04-10

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