IT8021530A0 - Dispositivo semiconduttore ad elettroluminescenza. - Google Patents

Dispositivo semiconduttore ad elettroluminescenza.

Info

Publication number: IT8021530A0
Authority: IT; Italy
Prior art keywords: electroluminscence; semiconductor device; semiconductor; electroluminscence semiconductor
Prior art date: 1979-04-24

Application number

IT8021530A

Other languages

English (en)

Other versions

IT1140886B (it

Inventor

Tijburg Rudolf Paulus

Dongen Van Teunis

Original Assignee

Philips Nv

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1979-04-24

Filing date

1980-04-21

Publication date

1980-04-21

1980-04-21 Application filed by Philips Nv filed Critical Philips Nv

1980-04-21 Publication of IT8021530A0 publication Critical patent/IT8021530A0/it

1986-10-10 Application granted granted Critical

1986-10-10 Publication of IT1140886B publication Critical patent/IT1140886B/it

Links

239000004065 semiconductor Substances 0.000 title 1

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
- H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/978—Semiconductor device manufacturing: process forming tapered edges on substrate or adjacent layers

Landscapes

Engineering & Computer Science (AREA)
Manufacturing & Machinery (AREA)
Computer Hardware Design (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
Led Devices (AREA)
Semiconductor Lasers (AREA)
Drying Of Semiconductors (AREA)
Weting (AREA)

IT21530/80A 1979-04-24 1980-04-21 Dispositivo semiconduttore ad elettroluminescenza IT1140886B (it)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
NL7903197A NL7903197A (nl)	1979-04-24	1979-04-24	Werkwijze voor het vervaardigen van een elektrolumines- cerende halfgeleiderinrichting en elektroluminescerende halfgeleiderinrichting vervaardigd volgens de werkwijze

Publications (2)

Publication Number	Publication Date
IT8021530A0 true IT8021530A0 (it)	1980-04-21
IT1140886B IT1140886B (it)	1986-10-10

Family

ID=19833037

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
IT21530/80A IT1140886B (it)	1979-04-24	1980-04-21	Dispositivo semiconduttore ad elettroluminescenza

Country Status (7)

Country	Link
US (1)	US4341010A (it)
JP (1)	JPS55143082A (it)
DE (1)	DE3015422A1 (it)
FR (1)	FR2455365A1 (it)
GB (1)	GB2047962B (it)
IT (1)	IT1140886B (it)
NL (1)	NL7903197A (it)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4276098A (en) *	1980-03-31	1981-06-30	Bell Telephone Laboratories, Incorporated	Batch processing of semiconductor devices
US4751708A (en) *	1982-03-29	1988-06-14	International Business Machines Corporation	Semiconductor injection lasers
GB8406432D0 (en) *	1984-03-12	1984-04-18	British Telecomm	Semiconductor devices
GB8413170D0 (en) *	1984-05-23	1984-06-27	British Telecomm	Production of semiconductor devices
CA1247947A (en) *	1984-07-31	1989-01-03	Masaru Wada	Method of manufacturing semiconductor device
US4652333A (en) *	1985-06-19	1987-03-24	Honeywell Inc.	Etch process monitors for buried heterostructures
JP2822195B2 (ja) *	1989-01-19	1998-11-11	ソニー株式会社	半導体レーザーの製造方法
JPH02199892A (ja) *	1989-01-27	1990-08-08	Nec Corp	半導体レーザの製造方法
US5179035A (en) *	1989-09-15	1993-01-12	U.S. Philips Corporation	Method of fabricating two-terminal non-linear devices
DE4427840A1 (de) *	1994-07-28	1996-02-01	Osa Elektronik Gmbh	Verfahren zur Effizienzerhöhung von A¶I¶¶I¶¶I¶B¶V¶ - Halbleiter-Chips
US6355567B1 (en) *	1999-06-30	2002-03-12	International Business Machines Corporation	Retrograde openings in thin films
KR100529632B1 (ko) *	2003-10-01	2005-11-17	동부아남반도체 주식회사	반도체 소자 및 그 제조 방법
US7141486B1 (en) *	2005-06-15	2006-11-28	Agere Systems Inc.	Shallow trench isolation structures comprising a graded doped sacrificial silicon dioxide material and a method for forming shallow trench isolation structures
CN112968099B (zh) *	2020-08-06	2022-02-25	重庆康佳光电技术研究院有限公司	一种氧化铝图形化方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
FR2168936B1 (it) *	1972-01-27	1977-04-01	Labo Electronique Physique
US3824493A (en) *	1972-09-05	1974-07-16	Bell Telephone Labor Inc	Fundamental mode, high power operation in double heterostructure junction lasers utilizing a remote monolithic mirror
US3865646A (en) *	1972-09-25	1975-02-11	Bell Telephone Labor Inc	Dielectric optical waveguides and technique for fabricating same
US3833435A (en) *	1972-09-25	1974-09-03	Bell Telephone Labor Inc	Dielectric optical waveguides and technique for fabricating same
US4121177A (en) *	1973-05-28	1978-10-17	Hitachi, Ltd.	Semiconductor device and a method of fabricating the same
JPS5269285A (en) *	1975-12-05	1977-06-08	Matsushita Electric Ind Co Ltd	Semiconductor laser device
US4178564A (en) *	1976-01-15	1979-12-11	Rca Corporation	Half wave protection layers on injection lasers
US4171234A (en) *	1976-07-20	1979-10-16	Matsushita Electric Industrial Co., Ltd.	Method of fabricating three-dimensional epitaxial layers utilizing molecular beams of varied angles
NL7609607A (nl) *	1976-08-30	1978-03-02	Philips Nv	Werkwijze voor het vervaardigen van een half- geleiderinrichting en halfgeleiderinrichting vervaardigd met behulp van de werkwijze.
US4230997A (en) *	1979-01-29	1980-10-28	Bell Telephone Laboratories, Incorporated	Buried double heterostructure laser device

1979
- 1979-04-24 NL NL7903197A patent/NL7903197A/nl not_active Application Discontinuation
1980
- 1980-04-18 FR FR8008776A patent/FR2455365A1/fr active Granted
- 1980-04-18 US US06/141,511 patent/US4341010A/en not_active Expired - Lifetime
- 1980-04-21 JP JP5181380A patent/JPS55143082A/ja active Pending
- 1980-04-21 GB GB8013015A patent/GB2047962B/en not_active Expired
- 1980-04-21 IT IT21530/80A patent/IT1140886B/it active
- 1980-04-22 DE DE19803015422 patent/DE3015422A1/de active Granted

Also Published As

Publication number	Publication date
FR2455365A1 (fr)	1980-11-21
GB2047962A (en)	1980-12-03
JPS55143082A (en)	1980-11-08
US4341010A (en)	1982-07-27
DE3015422C2 (it)	1987-12-03
GB2047962B (en)	1983-04-20
IT1140886B (it)	1986-10-10
DE3015422A1 (de)	1980-11-06
FR2455365B1 (it)	1985-02-15
NL7903197A (nl)	1980-10-28

Publication	Publication Date	Title
IT7919305A0 (it)	1979-01-15	Dispositivo semiconduttore.
IT8026328A0 (it)	1980-11-28	Dispositivo di venipuntura perfezionato.
NO165224C (no)	1991-01-16	Serum-separasjonsanordning.
DE3072175D1 (de)	1990-04-26	Halbleitervorrichtungen mit heterouebergang.
NL181963C (nl)	1987-12-01	Halfgeleiderlaserinrichting.
NL177265C (nl)	1985-08-16	Lichtemitterende halfgeleidereenheid.
IT7819704A0 (it)	1978-01-27	Dispositivo semiconduttore perfezionato.
NL191914C (nl)	1996-10-04	Halfgeleiderinrichting.
IT7819600A0 (it)	1978-01-25	Dispositivo semiconduttore.
NL186665C (nl)	1992-01-16	Halfgeleiderinrichting.
NL173572C (nl)	1984-02-01	Halfgeleiderinrichting.
ES240751Y (es)	1979-08-16	Dispositivo retenedor.
NL7902967A (nl)	1979-10-23	Elektroluminescerende halfgeleiderinrichting.
NL189271B (nl)	1992-09-16	Halfgeleiderinrichting.
IT8021530A0 (it)	1980-04-21	Dispositivo semiconduttore ad elettroluminescenza.
IT7921595A0 (it)	1979-04-04	Dispositivo semiconduttore.
IT8023529A0 (it)	1980-07-18	Struttura semiconduttrice.
IT8020125A0 (it)	1980-02-22	Dispositivo a semicondutture.
DE3022122A1 (de)	1980-12-18	Halbleitervorrichtung
IT7831321A0 (it)	1978-12-27	Dispositivo semiconduttore.
IT7919985A0 (it)	1979-02-07	Dispositivo semiconduttore.
SE7901535L (sv)	1980-08-22	Halvledaranordning
IT8019838A0 (it)	1980-02-11	Dispositivo semiconduttore.
NL181612C (nl)	1988-03-16	Halfgeleiderinrichting.
IT8121534A0 (it)	1981-05-06	Dispositivo semiconduttore.