IT1236994B - Processo per la fabbricazione di dispositivi semiconduttori mos di potenza e dispositivi con esso ottenuti - Google Patents

Processo per la fabbricazione di dispositivi semiconduttori mos di potenza e dispositivi con esso ottenuti

Info

Publication number
IT1236994B
IT1236994B IT02289189A IT2289189A IT1236994B IT 1236994 B IT1236994 B IT 1236994B IT 02289189 A IT02289189 A IT 02289189A IT 2289189 A IT2289189 A IT 2289189A IT 1236994 B IT1236994 B IT 1236994B
Authority
IT
Italy
Prior art keywords
devices
manufacture
power mos
semiconductive
devices obtained
Prior art date
Application number
IT02289189A
Other languages
English (en)
Other versions
IT8922891A0 (it
Inventor
Giuseppe Ferla
Original Assignee
Sgs Thomson Microelectronics
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sgs Thomson Microelectronics filed Critical Sgs Thomson Microelectronics
Priority to IT02289189A priority Critical patent/IT1236994B/it
Publication of IT8922891A0 publication Critical patent/IT8922891A0/it
Priority to US07/632,485 priority patent/US5141883A/en
Priority to EP90203503A priority patent/EP0435406B1/en
Priority to DE69007449T priority patent/DE69007449T2/de
Priority to KR1019900022248A priority patent/KR100202048B1/ko
Priority to JP2418101A priority patent/JPH04305978A/ja
Application granted granted Critical
Publication of IT1236994B publication Critical patent/IT1236994B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/456—Ohmic electrodes on silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4916—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen
    • H01L29/4925—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement
    • H01L29/4933—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement with a silicide layer contacting the silicon layer, e.g. Polycide gate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/126—Power FETs

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
IT02289189A 1989-12-29 1989-12-29 Processo per la fabbricazione di dispositivi semiconduttori mos di potenza e dispositivi con esso ottenuti IT1236994B (it)

Priority Applications (6)

Application Number Priority Date Filing Date Title
IT02289189A IT1236994B (it) 1989-12-29 1989-12-29 Processo per la fabbricazione di dispositivi semiconduttori mos di potenza e dispositivi con esso ottenuti
US07/632,485 US5141883A (en) 1989-12-29 1990-12-24 Process for the manufacture of power-mos semiconductor devices
EP90203503A EP0435406B1 (en) 1989-12-29 1990-12-24 Process for the manufacture of powermos semiconductor devices and the devices obtained therewith
DE69007449T DE69007449T2 (de) 1989-12-29 1990-12-24 Verfahren zur Herstellung von Leistungsmos- und Halbleiteranordnungen und damit hergestellten Anordnungen.
KR1019900022248A KR100202048B1 (ko) 1989-12-29 1990-12-28 전력-mos 반도체 장치의 제조공정 및 그에 따른 장치
JP2418101A JPH04305978A (ja) 1989-12-29 1990-12-28 電力用ｍｏｓ半導体デバイスの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT02289189A IT1236994B (it) 1989-12-29 1989-12-29 Processo per la fabbricazione di dispositivi semiconduttori mos di potenza e dispositivi con esso ottenuti

Publications (2)

Publication Number Publication Date
IT8922891A0 IT8922891A0 (it) 1989-12-29
IT1236994B true IT1236994B (it) 1993-05-12

Family

ID=11201599

Family Applications (1)

Application Number Title Priority Date Filing Date
IT02289189A IT1236994B (it) 1989-12-29 1989-12-29 Processo per la fabbricazione di dispositivi semiconduttori mos di potenza e dispositivi con esso ottenuti

Country Status (6)

Country Link
US (1) US5141883A (it)
EP (1) EP0435406B1 (it)
JP (1) JPH04305978A (it)
KR (1) KR100202048B1 (it)
DE (1) DE69007449T2 (it)
IT (1) IT1236994B (it)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5288653A (en) * 1991-02-27 1994-02-22 Nec Corporation Process of fabricating an insulated-gate field effect transistor
EP1408542A3 (en) * 1994-07-14 2009-01-21 STMicroelectronics S.r.l. High-speed MOS-technology power device integrated structure, and related manufacturing process
US5474946A (en) * 1995-02-17 1995-12-12 International Rectifier Corporation Reduced mask process for manufacture of MOS gated devices
US5595918A (en) * 1995-03-23 1997-01-21 International Rectifier Corporation Process for manufacture of P channel MOS-gated device
US5830798A (en) * 1996-01-05 1998-11-03 Micron Technology, Inc. Method for forming a field effect transistor
KR100204805B1 (ko) * 1996-12-28 1999-06-15 윤종용 디엠오에스 트랜지스터 제조방법
EP0993033A1 (en) 1998-10-06 2000-04-12 STMicroelectronics S.r.l. Gate insulating structure for power devices, and related manufacturing process
US6214673B1 (en) * 1999-07-09 2001-04-10 Intersil Corporation Process for forming vertical semiconductor device having increased source contact area
DE19959346B4 (de) * 1999-12-09 2004-08-26 Micronas Gmbh Verfahren zum Herstellen eines eine Mikrostruktur aufweisenden Festkörpers
WO2002050878A1 (de) 2000-12-21 2002-06-27 Micronas Gmbh Verfahren zum herstellen eines eine mikrostruktur aufweisenden festkörpers
ITVA20010045A1 (it) * 2001-12-14 2003-06-16 St Microelectronics Srl Flusso di processo per la realizzazione di un vdmos a canale scalato e basso gradiente di body per prestazioni ad elevata densita' di corren

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4443931A (en) * 1982-06-28 1984-04-24 General Electric Company Method of fabricating a semiconductor device with a base region having a deep portion
US4489481A (en) * 1982-09-20 1984-12-25 Texas Instruments Incorporated Insulator and metallization method for VLSI devices with anisotropically-etched contact holes
US4677735A (en) * 1984-05-24 1987-07-07 Texas Instruments Incorporated Method of providing buried contacts for N and P channel devices in an SOI-CMOS process using a single N+polycrystalline silicon layer
IT1213234B (it) * 1984-10-25 1989-12-14 Sgs Thomson Microelectronics Procedimento perfezionato per la fabbricazione di dispositivi a semiconduttore dmos.
DE3688057T2 (de) * 1986-01-10 1993-10-07 Gen Electric Halbleitervorrichtung und Methode zur Herstellung.
IT1204243B (it) * 1986-03-06 1989-03-01 Sgs Microelettronica Spa Procedimento autoallineato per la fabbricazione di celle dmos di piccole dimensioni e dispositivi mos ottenuti mediante detto procedimento
US4798810A (en) * 1986-03-10 1989-01-17 Siliconix Incorporated Method for manufacturing a power MOS transistor
US4716126A (en) * 1986-06-05 1987-12-29 Siliconix Incorporated Fabrication of double diffused metal oxide semiconductor transistor
US4842675A (en) * 1986-07-07 1989-06-27 Texas Instruments Incorporated Integrated circuit isolation process
US4772569A (en) * 1986-10-30 1988-09-20 Mitsubishi Denki Kabushiki Kaisha Method for forming oxide isolation films on french sidewalls
US4735680A (en) * 1986-11-17 1988-04-05 Yen Yung Chau Method for the self-aligned silicide formation in IC fabrication
JP2604777B2 (ja) * 1988-01-18 1997-04-30 松下電工株式会社 二重拡散型電界効果半導体装置の製法
US4949136A (en) * 1988-06-09 1990-08-14 University Of Connecticut Submicron lightly doped field effect transistors
US4985740A (en) * 1989-06-01 1991-01-15 General Electric Company Power field effect devices having low gate sheet resistance and low ohmic contact resistance

Also Published As

Publication number Publication date
IT8922891A0 (it) 1989-12-29
DE69007449D1 (de) 1994-04-21
JPH04305978A (ja) 1992-10-28
KR100202048B1 (ko) 1999-06-15
EP0435406B1 (en) 1994-03-16
US5141883A (en) 1992-08-25
KR910013450A (ko) 1991-08-08
EP0435406A1 (en) 1991-07-03
DE69007449T2 (de) 1994-08-25

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Effective date: 19961227