IT1015566B - Circuito di memoria - Google Patents

Circuito di memoria

Info

Publication number
IT1015566B
IT1015566B IT7424638A IT2463874A IT1015566B IT 1015566 B IT1015566 B IT 1015566B IT 7424638 A IT7424638 A IT 7424638A IT 2463874 A IT2463874 A IT 2463874A IT 1015566 B IT1015566 B IT 1015566B
Authority
IT
Italy
Prior art keywords
memory circuit
memory
circuit
Prior art date
Application number
IT7424638A
Other languages
English (en)
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Application granted granted Critical
Publication of IT1015566B publication Critical patent/IT1015566B/it

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/405Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with three charge-transfer gates, e.g. MOS transistors, per cell
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Dram (AREA)
  • Electronic Switches (AREA)
  • Semiconductor Integrated Circuits (AREA)
IT7424638A 1973-06-30 1974-06-28 Circuito di memoria IT1015566B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1973077693U JPS5522640Y2 (it) 1973-06-30 1973-06-30

Publications (1)

Publication Number Publication Date
IT1015566B true IT1015566B (it) 1977-05-20

Family

ID=13640960

Family Applications (1)

Application Number Title Priority Date Filing Date
IT7424638A IT1015566B (it) 1973-06-30 1974-06-28 Circuito di memoria

Country Status (8)

Country Link
US (1) US3919699A (it)
JP (1) JPS5522640Y2 (it)
CA (1) CA1025121A (it)
DE (1) DE2431580C2 (it)
FR (1) FR2235456B1 (it)
GB (1) GB1443588A (it)
IT (1) IT1015566B (it)
NL (1) NL7408737A (it)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4090256A (en) * 1975-05-27 1978-05-16 Motorola, Inc. First-in-first-out register implemented with single rank storage elements
GB1570887A (en) * 1976-03-13 1980-07-09 Ass Eng Ltd Speed responsive systems
DE2740113A1 (de) * 1977-09-06 1979-03-15 Siemens Ag Monolithisch integrierter halbleiterspeicher
JPS5753897A (en) * 1980-09-14 1982-03-31 Ricoh Co Ltd Signal detecting circuit
EP0065219B1 (en) * 1981-05-08 1987-08-26 Hitachi, Ltd. Signal voltage dividing circuit
US4578772A (en) * 1981-09-18 1986-03-25 Fujitsu Limited Voltage dividing circuit
US4656661A (en) * 1984-12-13 1987-04-07 American Telephone And Telegraph Company Switched capacitor coupled line receiver circuit
US6232931B1 (en) 1999-02-19 2001-05-15 The United States Of America As Represented By The Secretary Of The Navy Opto-electronically controlled frequency selective surface
FR2904463A1 (fr) * 2006-07-27 2008-02-01 St Microelectronics Sa Programmation d'un circuit de retention de charges pour mesure temporelle
CN101595530B (zh) * 2006-07-27 2012-12-05 意法半导体有限公司 读取用于进行时间测量的电荷保持元件的电路
FR2904464A1 (fr) * 2006-07-27 2008-02-01 St Microelectronics Sa Circuit eeprom de retention de charges pour mesure temporelle
WO2008012459A2 (fr) 2006-07-27 2008-01-31 Stmicroelectronics Sa Circuit de retention de charges pour mesure temporelle
FR2926382B1 (fr) * 2008-01-11 2010-02-26 Proton World Internat Nv Hierarchisation de cles cryptographiques dans un circuit electronique

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3373295A (en) * 1965-04-27 1968-03-12 Aerojet General Co Memory element
GB1256068A (en) * 1967-12-07 1971-12-08 Plessey Co Ltd Improvements in or relating to logic circuit arrangements
US3581292A (en) * 1969-01-07 1971-05-25 North American Rockwell Read/write memory circuit
US3618053A (en) * 1969-12-31 1971-11-02 Westinghouse Electric Corp Trapped charge memory cell
US3646525A (en) * 1970-01-12 1972-02-29 Ibm Data regeneration scheme without using memory sense amplifiers
JPS5244180B1 (it) * 1970-11-05 1977-11-05
US3652914A (en) * 1970-11-09 1972-03-28 Emerson Electric Co Variable direct voltage memory circuit

Also Published As

Publication number Publication date
DE2431580A1 (de) 1975-01-09
DE2431580C2 (de) 1986-09-11
NL7408737A (nl) 1975-01-02
JPS5522640Y2 (it) 1980-05-29
CA1025121A (en) 1978-01-24
FR2235456A1 (it) 1975-01-24
JPS5025444U (it) 1975-03-24
GB1443588A (en) 1976-07-21
US3919699A (en) 1975-11-11
FR2235456B1 (it) 1978-04-14

Similar Documents

Publication Publication Date Title
AT341253B (de) Speicheranordnung
IT1007147B (it) Circuito integrato
IT1015757B (it) Memoria integrata
IT1012811B (it) Circuito di commutazione
SE398686B (sv) Minnes-struktur
IT1021265B (it) Circuito integrato
IT981982B (it) Circuito di discriminazione perfezionato
IT1015570B (it) Circuito amplificatore
IT1012351B (it) Circuito integrato semiconduttore
BR7402269D0 (pt) Circuito
IT1021494B (it) Circuito di memorizzazione associativo
IT1015566B (it) Circuito di memoria
BR7402420D0 (pt) Circuito detetor
BR7408995D0 (pt) Arranjo de circuito
IT972369B (it) Circuito di memoria 3on l1mp1d1&1 e565
BR7406029D0 (pt) Disposicao de circuito
IT1002423B (it) Circuito comparatore
IT978033B (it) Circuito integrato
IT1022492B (it) Dispositivo di memoria
BR7406598D0 (pt) Circuito temporizado
AR200937A1 (es) Circuito de polarizacion
IT1014175B (it) Circuito telefonico interurbano
IT1021167B (it) Circuito semiconduttore darlington
IT1011202B (it) Circuito logico perfezionato
IT1027559B (it) Circuito di commutazione