GB9826519D0 - Semiconductor devices - Google Patents
Semiconductor devicesInfo
- Publication number
- GB9826519D0 GB9826519D0 GBGB9826519.2A GB9826519A GB9826519D0 GB 9826519 D0 GB9826519 D0 GB 9826519D0 GB 9826519 A GB9826519 A GB 9826519A GB 9826519 D0 GB9826519 D0 GB 9826519D0
- Authority
- GB
- United Kingdom
- Prior art keywords
- semiconductor devices
- semiconductor
- devices
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/2654—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds
- H01L21/26546—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds of electrically active species
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/207—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds further characterised by the doping material
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- High Energy & Nuclear Physics (AREA)
- Ceramic Engineering (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Manufacturing & Machinery (AREA)
- Led Devices (AREA)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GBGB9826519.2A GB9826519D0 (en) | 1998-12-02 | 1998-12-02 | Semiconductor devices |
JP11343421A JP2000173941A (en) | 1998-12-02 | 1999-12-02 | Semiconductor device |
GB9928532A GB2344462B (en) | 1998-12-02 | 1999-12-02 | Semiconductor devices |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GBGB9826519.2A GB9826519D0 (en) | 1998-12-02 | 1998-12-02 | Semiconductor devices |
Publications (1)
Publication Number | Publication Date |
---|---|
GB9826519D0 true GB9826519D0 (en) | 1999-01-27 |
Family
ID=10843534
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GBGB9826519.2A Ceased GB9826519D0 (en) | 1998-12-02 | 1998-12-02 | Semiconductor devices |
GB9928532A Expired - Fee Related GB2344462B (en) | 1998-12-02 | 1999-12-02 | Semiconductor devices |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB9928532A Expired - Fee Related GB2344462B (en) | 1998-12-02 | 1999-12-02 | Semiconductor devices |
Country Status (2)
Country | Link |
---|---|
JP (1) | JP2000173941A (en) |
GB (2) | GB9826519D0 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104183793A (en) * | 2013-05-22 | 2014-12-03 | 海洋王照明科技股份有限公司 | Preparation method for organic light-emitting device |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3812519A (en) * | 1970-02-07 | 1974-05-21 | Tokyo Shibaura Electric Co | Silicon double doped with p and as or b and as |
US4111719A (en) * | 1976-12-06 | 1978-09-05 | International Business Machines Corporation | Minimization of misfit dislocations in silicon by double implantation of arsenic and germanium |
GB2086135B (en) * | 1980-09-30 | 1985-08-21 | Nippon Telegraph & Telephone | Electrode and semiconductor device provided with the electrode |
US4631234A (en) * | 1985-09-13 | 1986-12-23 | Texas Instruments Incorporated | Germanium hardened silicon substrate |
EP0366552B1 (en) * | 1988-10-27 | 1993-04-28 | Fujitsu Limited | Method of manufacturing a heterojunction bipolar transistor |
JP2809692B2 (en) * | 1989-04-28 | 1998-10-15 | 株式会社東芝 | Semiconductor light emitting device and method of manufacturing the same |
US5553566A (en) * | 1995-06-22 | 1996-09-10 | Motorola Inc. | Method of eliminating dislocations and lowering lattice strain for highly doped N+ substrates |
EP0807978A3 (en) * | 1996-05-10 | 1997-11-26 | Paul-Drude-Institut für Festkörperelektronik | A method of fabricating a layer of high p-type conductivity in a semiconductor component and a semiconductor component having such a layer |
-
1998
- 1998-12-02 GB GBGB9826519.2A patent/GB9826519D0/en not_active Ceased
-
1999
- 1999-12-02 GB GB9928532A patent/GB2344462B/en not_active Expired - Fee Related
- 1999-12-02 JP JP11343421A patent/JP2000173941A/en active Pending
Also Published As
Publication number | Publication date |
---|---|
GB2344462A (en) | 2000-06-07 |
GB2344462B (en) | 2001-05-16 |
JP2000173941A (en) | 2000-06-23 |
GB9928532D0 (en) | 2000-02-02 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
AT | Applications terminated before publication under section 16(1) |