GB977933A - Thick web dendritic growth - Google Patents

Thick web dendritic growth

Info

Publication number
GB977933A
GB977933A GB13465/63A GB1346563A GB977933A GB 977933 A GB977933 A GB 977933A GB 13465/63 A GB13465/63 A GB 13465/63A GB 1346563 A GB1346563 A GB 1346563A GB 977933 A GB977933 A GB 977933A
Authority
GB
United Kingdom
Prior art keywords
dendritic
web
web portion
produced
thick
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB13465/63A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CBS Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US98618A external-priority patent/US3129061A/en
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of GB977933A publication Critical patent/GB977933A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/36—Single-crystal growth by pulling from a melt, e.g. Czochralski method characterised by the seed, e.g. its crystallographic orientation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/903—Dendrite or web or cage technique

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

977,933. Dendritic crystals. WESTING- HOUSE ELECTRIC CORPORATION. April 4, 1963 [April 30, 1962], No. 13465/63. Heading B1S. The process for the production of a dendritic body composed of at least two dendritic crystals having at least two interior twin planes connected by a web portion (Fig. 4) is modified to form a web portion at least as thick as the dendritic crystals. The dendritic body may have a concave surface on one (Fig. 11) or both (Figs. 9 and 10) sides of the web portion. The interior twin planes may or may not extend through the web portion. The thickened web is produced by reducing the rate of pulling to 0À75 or less. A silicon dendritic body having a connecting web about 1 mm. thick at its widest point is produced by pulling at a rate of about 0À5 inch/minute from a melt at 1419 ‹C. (8 ‹C. supercooling). The plano-convex form of Fig. 11 may be produced by displacing the seed from the centre of the melt or by displacing the heating means with respect to the crucible. Specifications 889,058, 913,674 and 938,915 are referred to.
GB13465/63A 1961-03-27 1963-04-04 Thick web dendritic growth Expired GB977933A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US98618A US3129061A (en) 1961-03-27 1961-03-27 Process for producing an elongated unitary body of semiconductor material crystallizing in the diamond cubic lattice structure and the product so produced
US191145A US3162507A (en) 1961-03-27 1962-04-30 Thick web dendritic growth

Publications (1)

Publication Number Publication Date
GB977933A true GB977933A (en) 1964-12-16

Family

ID=26794931

Family Applications (2)

Application Number Title Priority Date Filing Date
GB7598/62A Expired GB938915A (en) 1961-03-27 1962-02-27 Pulling dendritic crystals
GB13465/63A Expired GB977933A (en) 1961-03-27 1963-04-04 Thick web dendritic growth

Family Applications Before (1)

Application Number Title Priority Date Filing Date
GB7598/62A Expired GB938915A (en) 1961-03-27 1962-02-27 Pulling dendritic crystals

Country Status (6)

Country Link
US (1) US3162507A (en)
BE (1) BE631688A (en)
CH (1) CH412820A (en)
DE (1) DE1246683B (en)
GB (2) GB938915A (en)
NL (2) NL276481A (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3388013A (en) * 1963-09-28 1968-06-11 Matsushita Electronics Corp Method of forming a p-n junction in a polycrystalline material
US3342559A (en) * 1964-04-27 1967-09-19 Westinghouse Electric Corp Apparatus for producing dendrites
GB1079430A (en) * 1965-05-06 1967-08-16 Maxbo Ab A method and apparatus for heat sealing or cutting thermoplastic material
US3394994A (en) * 1966-04-26 1968-07-30 Westinghouse Electric Corp Method of varying the thickness of dendrites by addition of an impurity which controls growith in the <111> direction
US3413098A (en) * 1966-08-10 1968-11-26 Westinghouse Electric Corp Process for varying the width of sheets of web material
US3650703A (en) * 1967-09-08 1972-03-21 Tyco Laboratories Inc Method and apparatus for growing inorganic filaments, ribbon from the melt
US3977071A (en) * 1969-09-29 1976-08-31 Texas Instruments Incorporated High depth-to-width ratio etching process for monocrystalline germanium semiconductor materials
US4828808A (en) * 1987-09-02 1989-05-09 The United States Of America As Represented By The United States Department Of Energy Apparatus for silicon web growth of higher output and improved growth stability
US5092956A (en) * 1987-09-30 1992-03-03 The United States Of America As Represented By The United States National Aeronautics And Space Administration Device for mechanically stabilizing web ribbon buttons during growth initiation

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL113205C (en) * 1958-08-28 1900-01-01
US3041403A (en) * 1958-09-15 1962-06-26 Gen Dynamics Corp Electronic switching telephone system

Also Published As

Publication number Publication date
DE1246683B (en) 1967-08-10
BE631688A (en) 1900-01-01
US3162507A (en) 1964-12-22
GB938915A (en) 1963-10-09
NL276481A (en) 1900-01-01
NL292060A (en) 1900-01-01
CH412820A (en) 1966-05-15

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