GB9009558D0 - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- GB9009558D0 GB9009558D0 GB909009558A GB9009558A GB9009558D0 GB 9009558 D0 GB9009558 D0 GB 9009558D0 GB 909009558 A GB909009558 A GB 909009558A GB 9009558 A GB9009558 A GB 9009558A GB 9009558 D0 GB9009558 D0 GB 9009558D0
- Authority
- GB
- United Kingdom
- Prior art keywords
- semiconductor device
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB909009558A GB9009558D0 (en) | 1990-04-27 | 1990-04-27 | Semiconductor device |
PCT/GB1991/000673 WO1991017570A1 (en) | 1990-04-27 | 1991-04-26 | Insulated gate bipolar transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB909009558A GB9009558D0 (en) | 1990-04-27 | 1990-04-27 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
GB9009558D0 true GB9009558D0 (en) | 1990-06-20 |
Family
ID=10675141
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB909009558A Pending GB9009558D0 (en) | 1990-04-27 | 1990-04-27 | Semiconductor device |
Country Status (2)
Country | Link |
---|---|
GB (1) | GB9009558D0 (en) |
WO (1) | WO1991017570A1 (en) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3417013B2 (en) * | 1993-10-18 | 2003-06-16 | 株式会社デンソー | Insulated gate bipolar transistor |
US6011280A (en) * | 1998-06-26 | 2000-01-04 | Delco Electronics Corporation | IGBT power device with improved resistance to reverse power pulses |
DE19857673C1 (en) * | 1998-12-14 | 2000-05-04 | Siemens Ag | Bidirectionally blocking type power semiconductor element |
DE69930715T2 (en) * | 1999-01-25 | 2007-03-29 | Stmicroelectronics S.R.L., Agrate Brianza | Electronic semiconductor power with integrated diode |
JP2005236229A (en) * | 2004-02-23 | 2005-09-02 | Sansha Electric Mfg Co Ltd | Structure of high reverse breakdown-voltage igbt and method of manufacturing the same |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3391287A (en) * | 1965-07-30 | 1968-07-02 | Westinghouse Electric Corp | Guard junctions for p-nu junction semiconductor devices |
JPH0612827B2 (en) * | 1985-02-28 | 1994-02-16 | 株式会社東芝 | Conduction modulation type MOSFET |
US5072312A (en) * | 1988-03-15 | 1991-12-10 | Siemens Aktiengesellschaft | Thyristor with high positive and negative blocking capability |
JPH0244776A (en) * | 1988-08-05 | 1990-02-14 | Fuji Electric Co Ltd | Insulated gate type bipolar transistor |
-
1990
- 1990-04-27 GB GB909009558A patent/GB9009558D0/en active Pending
-
1991
- 1991-04-26 WO PCT/GB1991/000673 patent/WO1991017570A1/en unknown
Also Published As
Publication number | Publication date |
---|---|
WO1991017570A1 (en) | 1991-11-14 |
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