GB8903793D0 - Diamond synthesis - Google Patents

Diamond synthesis

Info

Publication number
GB8903793D0
GB8903793D0 GB898903793A GB8903793A GB8903793D0 GB 8903793 D0 GB8903793 D0 GB 8903793D0 GB 898903793 A GB898903793 A GB 898903793A GB 8903793 A GB8903793 A GB 8903793A GB 8903793 D0 GB8903793 D0 GB 8903793D0
Authority
GB
United Kingdom
Prior art keywords
diamond synthesis
diamond
synthesis
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
GB898903793A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Plessey Co Ltd
Original Assignee
Plessey Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Plessey Co Ltd filed Critical Plessey Co Ltd
Priority to GB898903793A priority Critical patent/GB8903793D0/en
Publication of GB8903793D0 publication Critical patent/GB8903793D0/en
Priority to EP90902315A priority patent/EP0414841A1/en
Priority to PCT/GB1990/000122 priority patent/WO1990009465A1/en
Priority to JP2502378A priority patent/JPH03504849A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
GB898903793A 1989-02-20 1989-02-20 Diamond synthesis Pending GB8903793D0 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
GB898903793A GB8903793D0 (en) 1989-02-20 1989-02-20 Diamond synthesis
EP90902315A EP0414841A1 (en) 1989-02-20 1990-01-29 Diamond synthesis
PCT/GB1990/000122 WO1990009465A1 (en) 1989-02-20 1990-01-29 Diamond synthesis
JP2502378A JPH03504849A (en) 1989-02-20 1990-01-29 diamond synthesis

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB898903793A GB8903793D0 (en) 1989-02-20 1989-02-20 Diamond synthesis

Publications (1)

Publication Number Publication Date
GB8903793D0 true GB8903793D0 (en) 1989-04-05

Family

ID=10651979

Family Applications (1)

Application Number Title Priority Date Filing Date
GB898903793A Pending GB8903793D0 (en) 1989-02-20 1989-02-20 Diamond synthesis

Country Status (4)

Country Link
EP (1) EP0414841A1 (en)
JP (1) JPH03504849A (en)
GB (1) GB8903793D0 (en)
WO (1) WO1990009465A1 (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5540904A (en) * 1989-12-11 1996-07-30 General Electric Company Isotopically-pure carbon-12 or carbon-13 polycrystalline diamond possessing enhanced thermal conductivity
US5360479A (en) * 1990-07-02 1994-11-01 General Electric Company Isotopically pure single crystal epitaxial diamond films and their preparation
DE4027580A1 (en) * 1990-08-31 1992-03-05 Lux Benno COMPOSITE BODY, METHOD FOR THE PRODUCTION AND USE THEREOF
CA2070436A1 (en) * 1991-07-08 1993-01-09 Harold P. Bovenkerk Isotopically-pure carbon-12 or carbon-13 polycrystalline diamond possessing enhanced thermal conductivity
CA2076087A1 (en) * 1991-09-03 1993-03-04 Jerome J. Tiemann Isotopic diamond coated products and their production
EP0867536A1 (en) * 1997-03-24 1998-09-30 General Electric Company Low-cost isotopically engineered diamond amvils
EP0867537A1 (en) * 1997-03-24 1998-09-30 General Electric Company Method for the production of low-cost isotopically engineered diamond anvils
JP5240978B2 (en) * 2007-04-13 2013-07-17 国立大学法人電気通信大学 Method for producing diamond-like carbon film

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4900628A (en) * 1986-07-23 1990-02-13 Sumitomo Electric Industries, Ltd. Gaseous phase synthesized diamond and method for synthesizing same

Also Published As

Publication number Publication date
WO1990009465A1 (en) 1990-08-23
JPH03504849A (en) 1991-10-24
EP0414841A1 (en) 1991-03-06

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