GB606626A - Improvements in translating devices for electric waves and methods of preparing them - Google Patents
Improvements in translating devices for electric waves and methods of preparing themInfo
- Publication number
- GB606626A GB606626A GB6129/46A GB612946A GB606626A GB 606626 A GB606626 A GB 606626A GB 6129/46 A GB6129/46 A GB 6129/46A GB 612946 A GB612946 A GB 612946A GB 606626 A GB606626 A GB 606626A
- Authority
- GB
- United Kingdom
- Prior art keywords
- ions
- silicon
- key
- surface layer
- interstices
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 150000002500 ions Chemical class 0.000 abstract 6
- 229910052710 silicon Inorganic materials 0.000 abstract 6
- 239000010703 silicon Substances 0.000 abstract 6
- 239000002344 surface layer Substances 0.000 abstract 4
- 239000004411 aluminium Substances 0.000 abstract 3
- 229910052782 aluminium Inorganic materials 0.000 abstract 3
- 229910052751 metal Inorganic materials 0.000 abstract 3
- 239000002184 metal Substances 0.000 abstract 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 abstract 2
- -1 aluminium ions Chemical class 0.000 abstract 2
- 239000010410 layer Substances 0.000 abstract 2
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 abstract 1
- 229910001369 Brass Inorganic materials 0.000 abstract 1
- 229910000831 Steel Inorganic materials 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- DMFGNRRURHSENX-UHFFFAOYSA-N beryllium copper Chemical compound [Be].[Cu] DMFGNRRURHSENX-UHFFFAOYSA-N 0.000 abstract 1
- 239000010951 brass Substances 0.000 abstract 1
- 238000005266 casting Methods 0.000 abstract 1
- 230000001143 conditioned effect Effects 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 239000000945 filler Substances 0.000 abstract 1
- 230000004927 fusion Effects 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 229910052759 nickel Inorganic materials 0.000 abstract 1
- 229920001568 phenolic resin Polymers 0.000 abstract 1
- 239000005011 phenolic resin Substances 0.000 abstract 1
- 239000010453 quartz Substances 0.000 abstract 1
- 229920006395 saturated elastomer Polymers 0.000 abstract 1
- 238000007493 shaping process Methods 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- 239000010959 steel Substances 0.000 abstract 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract 1
- 239000010937 tungsten Substances 0.000 abstract 1
- 229910052721 tungsten Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28B—SHAPING CLAY OR OTHER CERAMIC COMPOSITIONS; SHAPING SLAG; SHAPING MIXTURES CONTAINING CEMENTITIOUS MATERIAL, e.g. PLASTER
- B28B7/00—Moulds; Cores; Mandrels
- B28B7/0097—Press moulds; Press-mould and press-ram assemblies
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28B—SHAPING CLAY OR OTHER CERAMIC COMPOSITIONS; SHAPING SLAG; SHAPING MIXTURES CONTAINING CEMENTITIOUS MATERIAL, e.g. PLASTER
- B28B7/00—Moulds; Cores; Mandrels
- B28B7/36—Linings or coatings, e.g. removable, absorbent linings, permanent anti-stick coatings; Linings becoming a non-permanent layer of the moulded article
- B28B7/366—Replaceable lining plates for press mould
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B30—PRESSES
- B30B—PRESSES IN GENERAL
- B30B15/00—Details of, or accessories for, presses; Auxiliary measures in connection with pressing
- B30B15/02—Dies; Inserts therefor; Mounting thereof; Moulds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Ceramic Engineering (AREA)
- Mechanical Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Silicon Compounds (AREA)
- Conductive Materials (AREA)
Abstract
606,626. Crystal detectors. WESTERN ELECTRIC CO., Inc. Feb. 27, 1946, No. 6129. Convention date, Dec. 14, 1944. [Class 40 (v)] A rectifier element is made by casting an ingot from a quantity of silicon of high purity, to which has been added before fusion a small amount of a metal which produces ions comparable in size to the interstices in the lattice structure of the pure silicon, shaping. an element from the ingot, heat treating the element to produce a thin surface layer of pure silicon, and applying an electrical stress to ionize the added metal and to cause the ions to lodge in the interstices in the surface layer. A suitable metal to add is aluminium, which is added in a proportion determined as described in Specification 602,140. A thin slab 3 cut from the ingot is polished and heated at 1050 C. for two hours to produce a layer of vitreous oxide over a thin layer of crystallised pure silicon. The back surface is then polished and nickel-plated and soldered to a brass cylinder 5 inside a cylinder 4 of steel or beryllium copper. A tungsten contact wire 8 having its end ground flat is spot-welded to a nickel pin 6 held in an insulating member 7 made of phenolic resin with a powdered quartz filler. The rectifier 12, 13, Fig. 4, is conditioned by placing it in circuit with a source 15 of alternating current and a load 16 arranged as an harmonic generator. In addition, a D.C. bias from a source 19 may be applied across byepass condenser 17 under control of a key 21. Assuming that the rectifier element 12 is electropositive, the self-bias due to rectification will tend to cause the ions of impurities in the silicon away from the rectifying surface. The large bias from source 19 acts in the opposite direction. As a result, when key 21 is closed, some of the large aluminium ions together with other ions are driven into the surface layer. When key 21 is opened, the ions tend to return to the body of the element, but the larger ions tend to remain in the interstices of the lattice structure of the silicon. Thus, after a number of closures of key 21, the surface layer becomes saturated with aluminium ions which produces a stable element of good rectifying quality.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US568190A US2415841A (en) | 1944-12-14 | 1944-12-14 | Conducting material and device and method of making them |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB606626A true GB606626A (en) | 1948-08-17 |
Family
ID=24270281
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB6129/46A Expired GB606626A (en) | 1944-12-14 | 1946-02-27 | Improvements in translating devices for electric waves and methods of preparing them |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US2415841A (en) |
| BE (1) | BE471046A (en) |
| FR (1) | FR941322A (en) |
| GB (1) | GB606626A (en) |
| NL (1) | NL130727C (en) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2472770A (en) * | 1945-11-20 | 1949-06-07 | Sylvania Electric Prod | Resistance apparatus for converting mechanical movement into electrical pulses |
| US2704818A (en) * | 1947-04-24 | 1955-03-22 | Gen Electric | Asymmetrically conductive device |
| US2697806A (en) * | 1949-03-09 | 1954-12-21 | Sylvania Electric Prod | Glass enclosed electrical translator |
| US2671189A (en) * | 1949-11-28 | 1954-03-02 | Siemens Ag | Semiconductor amplifier having a resiliently adjustably mounted semiconductor |
| NL82014C (en) * | 1949-11-30 | |||
| US2682022A (en) * | 1949-12-30 | 1954-06-22 | Sylvania Electric Prod | Metal-envelope translator |
| US2662984A (en) * | 1950-01-27 | 1953-12-15 | Gen Electric Co Ltd | Crystal contact device |
| US2748326A (en) * | 1950-03-28 | 1956-05-29 | Sylvania Electric Prod | Semiconductor translators and processing |
| US2660696A (en) * | 1950-05-10 | 1953-11-24 | Hazeltine Research Inc | Crystal contact device |
| US2697269A (en) * | 1950-07-24 | 1954-12-21 | Bell Telephone Labor Inc | Method of making semiconductor translating devices |
| US2842723A (en) * | 1952-04-15 | 1958-07-08 | Licentia Gmbh | Controllable asymmetric electrical conductor systems |
| US2815303A (en) * | 1953-07-24 | 1957-12-03 | Raythcon Mfg Company | Method of making junction single crystals |
| BE536181A (en) * | 1954-03-03 | |||
| US2842467A (en) * | 1954-04-28 | 1958-07-08 | Ibm | Method of growing semi-conductors |
| GB794128A (en) * | 1955-08-04 | 1958-04-30 | Gen Electric Co Ltd | Improvements in or relating to methods of forming a junction in a semiconductor |
| US2900702A (en) * | 1955-12-19 | 1959-08-25 | Bell Telephone Labor Inc | Method of treating silicon surfaces |
| US3078559A (en) * | 1959-04-13 | 1963-02-26 | Sylvania Electric Prod | Method for preparing semiconductor elements |
| NL282240A (en) * | 1961-12-04 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB551209A (en) * | 1941-02-04 | 1943-02-12 | Western Electric Co | Rectifying contact detector systems for very short electric waves |
-
0
- NL NL130727D patent/NL130727C/xx active
- BE BE471046D patent/BE471046A/xx unknown
-
1944
- 1944-12-14 US US568190A patent/US2415841A/en not_active Expired - Lifetime
-
1946
- 1946-02-27 GB GB6129/46A patent/GB606626A/en not_active Expired
-
1947
- 1947-01-29 FR FR941322D patent/FR941322A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| US2415841A (en) | 1947-02-18 |
| NL130727C (en) | |
| FR941322A (en) | 1949-01-07 |
| BE471046A (en) |
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