GB541739A - Improvements in or relating to photo electric cells - Google Patents

Improvements in or relating to photo electric cells

Info

Publication number
GB541739A
GB541739A GB11757/40A GB1175740A GB541739A GB 541739 A GB541739 A GB 541739A GB 11757/40 A GB11757/40 A GB 11757/40A GB 1175740 A GB1175740 A GB 1175740A GB 541739 A GB541739 A GB 541739A
Authority
GB
United Kingdom
Prior art keywords
layer
gold
selenium
cadmium
electric cells
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB11757/40A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to GB11757/40A priority Critical patent/GB541739A/en
Publication of GB541739A publication Critical patent/GB541739A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/12—Application of an electrode to the exposed surface of the selenium or tellurium after the selenium or tellurium has been applied to the foundation plate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02425—Conductive materials, e.g. metallic silicides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Gas-Filled Discharge Tubes (AREA)

Abstract

541,739. Selenium cells. VESZI, G. A. July 16, 1940, No. 11757. [Class 40 (iii)] In making photo-electric cells of the kind comprising a selenium base coated with a composite metallic layer by successive cathode sputterings, (1) the first layer is very thin, namely of a thickness which if applied under identical conditions to a transparent or white surface would make the layer only just visible ; and (2) the first laver may be gold and the second layer cadmium. Diffusion between the layers is accelerated by increasing the temperature during the sputtering process for example automatically by the gas discharge. A layer of gold may be applied to the cadmium layer for picking-up the current; this gold layer may be applied by cathode sputtering at a low temperature say 20‹ C. to avoid diffusion. The selenium base may be a film applied to a plate of iron and heated to become light sensitive.
GB11757/40A 1940-07-16 1940-07-16 Improvements in or relating to photo electric cells Expired GB541739A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB11757/40A GB541739A (en) 1940-07-16 1940-07-16 Improvements in or relating to photo electric cells

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB11757/40A GB541739A (en) 1940-07-16 1940-07-16 Improvements in or relating to photo electric cells

Publications (1)

Publication Number Publication Date
GB541739A true GB541739A (en) 1941-12-09

Family

ID=9992140

Family Applications (1)

Application Number Title Priority Date Filing Date
GB11757/40A Expired GB541739A (en) 1940-07-16 1940-07-16 Improvements in or relating to photo electric cells

Country Status (1)

Country Link
GB (1) GB541739A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2701326A (en) * 1949-11-30 1955-02-01 Bell Telephone Labor Inc Semiconductor translating device
US2886502A (en) * 1955-10-28 1959-05-12 Edwards High Vacuum Ltd Cathodic sputtering of metal and dielectric films

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2701326A (en) * 1949-11-30 1955-02-01 Bell Telephone Labor Inc Semiconductor translating device
US2886502A (en) * 1955-10-28 1959-05-12 Edwards High Vacuum Ltd Cathodic sputtering of metal and dielectric films

Similar Documents

Publication Publication Date Title
US2721808A (en) Electroluminescent cell
GB796896A (en) Method of producing selenium rectifiers
ES333127A1 (en) A procedure for depositing by cathodized spraying on a substrate a thin metal layer. (Machine-translation by Google Translate, not legally binding)
GB485528A (en) Improvements in and relating to light sensitive devices and methods of manufacturing the same
GB500696A (en) Improvements in or relating to devices sensitive to radiation
GB541739A (en) Improvements in or relating to photo electric cells
GB1212114A (en) Negative-temperature-coefficient resistors
GB439774A (en) Improvements relating to photo-electric cells and methods of manufacturing the same
GB542599A (en) Improvements in or relating to photo electric cells
JPS5669875A (en) Amorphous semiconductor solar cell
JPS5752182A (en) Thin film transistor
GB460012A (en) Improvements in or relating to light sensitive layers for photoelectric cells
GB1035892A (en) New and useful improvements in xerographic plate
JPS5632774A (en) Thin film type photovoltaic element and manufacture thereof
JPS5752183A (en) Manufacture of thin film transistor
GB485529A (en) Improvements in and relating to light sensitive devices
GB485530A (en) Improvements in and relating to light-sensitive devices
GB729720A (en) Improvements relating to bearings
ES353384A1 (en) Photoconductive composition
GB575411A (en) Improvements in methods of manufacture of selenium elements
GB412665A (en) Improvements in and relating to light sensitive devices
JPS559502A (en) Substrate for electrophotographic material
JPS6414891A (en) Thin film el element
US2276198A (en) Photocell
JPS56110230A (en) Forming method of electrode on semiconductor device