GB2486626A - A solar cell and a method for manufacturing of a solar cell - Google Patents

A solar cell and a method for manufacturing of a solar cell Download PDF

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Publication number
GB2486626A
GB2486626A GB0918355.9A GB0918355A GB2486626A GB 2486626 A GB2486626 A GB 2486626A GB 0918355 A GB0918355 A GB 0918355A GB 2486626 A GB2486626 A GB 2486626A
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Prior art keywords
layer
regions
solar cell
deformed
create
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GB2486626B (en
GB2486626A9 (en
GB0918355D0 (en
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Olga Jewgienjewna Dracziowa
Walerij Sadbekowicz Ametow
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Solar Group Pl Sp Z O O
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Solar Group Pl Sp Z O O
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/03529—Shape of the potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1872—Recrystallisation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Photovoltaic Devices (AREA)

Abstract

A solar cell or a method for manufacturing a solar cell comprising providing p-type substrate layer 110 (e.g. 150-250mm thick), saw damage etching and texturing layer 110 to create a saw-like pattern (e.g. random pyramids) on a top surface of layer 110 and creating regions (131, fig. 2) of deformed structure (e.g. deformed crystallographic structure) by laser processing the top surface of layer 110. A phosphorus source (132, fig. 3) based on phosphorus acid is deposited on the deformed regions (131, fig. 3) and cured by laser radiation to create deformed regions (133, fig. 4) with ultrahigh concentration of phosphorus and a high temperature diffusion (e.g. 700-900oC) is conducted to create highly-doped n+ regions 130 having depth 25-35mm and width 45-50mm. Front contact electrodes 180 having a width smaller than 40mm are connected to highly doped n+ regions 130 and may be formed by placing the cell in a silver solution. Back contact electrodes 160 are connected to the bottom of layer 110. A boron source (141, fig. 6) may be deposited on the rear surface of layer 110 to form p+ layer 140. N-type region 120 and passivation layers 150, 170 may also be deposited on layer 110.

Description

A SOLAR CELL AND A METHOD FOR MANUFACTURING OF A SOLAR CELL
Description
The object of the invention is a solar cell and a method for manufacturing of a solar cell.
A conventional structure of a solar cell, as shown in Fig. 1, comprises a p-type substrate 119 forming the base of the cell and an n-type layer 129 forming the emitter of the cell, a front contact grid 189, a passivation layer 179 between the front contacts, and a back contact layer 169. The electrons and holes generated by photons separate by p-n junction and produce electric current across the device.
Such structure of the solar cell has a number of drawbacks related to the structure of the front emitter. It requires a relatively thick n-type layer for the emitter, so as to avoid penetration of silver contact during the sintering process to the p-type base, which would create a short circuit. This allows performing the sintering process in limited duration and temperature, which results in a differing quality of contacts along the wafer, caused by different heat distribution along the wafer. Furthermore, a thin layer between the contact and the p-type substrate reduces the carriers lifetime. Still, a part (in typical embodiments, about 7%) of the emitter surface is shadowed by the front contact grid.
The aim of the invention is to provide an improved solar cell and a method for manufacturing thereof, wherein the aforementioned problems are limited.
The object of the invention is a method for manufacturing of a solar cell, comprising the steps of providing a p-type substrate layer, saw damage etching and texturing the p-type substrate layer so as to create a saw-like pattern on a top surface of the p-type substrate layer, creating regions of deformed structure by laser processing the top surface of the p-type substrate layer, depositing a phosphorus source, based on phosphorus acid, on the deformed regions, curing the patterns of phosphorus source by laser radiation, so as to create deformed regions with ultrahigh concentration of phosphorus, conducting a high temperature diffusion process to create highly-doped n-'-regions, having a depth of 25-35 micrometers and a width of 45-50 micrometers, connecting front contact electrodes to the highly doped n+ regions, the front electrodes having a width smaller than 40 micrometers, connecting back contact electrodes to the bottom layer of the p-type substrate layer.
Another object of the invention is a solar cell manufactured according to the method of the invention.
The object of the invention is shown by way of an exemplary embodiment on a drawing, in which Figs. 2-8 presents individual steps of the manufacturing process and Fig. 9 shows a final solar cell according to the invention.
The solar cell according to the invention, shown in Fig. 8, is manufactured by way of the following process. First, a p-type wafer 110 is subject to saw damage etching and texturing to create a random pyramides on a top surface of the p-type wafer 110.
Next, the surface wafer is subject to laser processing in order to create a layer with deformed crystallographic structure, as shown in Fig. 2. The laser speed and intensity is varied so as to create deformed regions 131.
Next, a phosphorus source 132, based on phosphorus acid is deposited on the surface of the deformed regions 131, as shown in Fig. 3.
Then, the patterns of phosphorus source are cured by laser radiation, resulting is deformed regions 133 with ultrahigh concentration of phosphorus, as shown in Fig. 4. The regions with ultrahigh concentration of phosphorus will be treated as a source for diffusion into surrounded region.
Afterwards, a boron source 141 is deposited on the opposite side of the p-type substrate 110, as shown in Fig. 5.
Then, a two-step high-temperature process takes place. The result of the first step is shown in Fig. 6, wherein highly-doped region 134 is created by diffusion from source (deformed area 135) into surrounded substrate. In the second step, dopant atoms become active and deformed area is recrystallized. A quartz tube diffusion furnace is used for this process, wherein process is conducted in a temperature of 700-900 deg. C. As a result, a structure shown in Fig. 7 is formed. The resultant structure comprises highly-doped n-'-regions 130, having a depth in the range from to 35 micrometers, width in the range from 45 to 50 micrometers, resistance of between about 10 ohms/sq to about 40 ohms/sq. The thickness of the p-type substrate layer is in the range from 150 to 250 micrometers. The large depth of the regions 130 reduces the way of carriers to the highly doped regions 130. For conventional solar cell, generated electrons should reach surface of cell and be extracted in n-type layer. In this structure, electrons can reach not only surface, but the sides, created by deep 130 regions.
Next, passivation layers are added to the wafer, contact windows are opened by combining two steps process: during the first step, optical characteristics of the passivation layer are changed, during the second step the passivation layer is removed. Front contact grid is deposited by ink jet deposition. A back contact grid is deposited and the wafer is sintered. Then, a LIP process is performed, according to standard procedures.
Then, the cells are placed in a silver solution. The front surface of the cells is illuminated and the circuit in which the cell is a cathode and the source of silver is an anode is assembled. Positive atoms of silver are deposited on the contact grid. The width of contact electrodes is about 40 micrometers, which is much smaller than a typical value of 120 micrometers for a standard solar cell as shown in Fig. 1. As a result, the losses due to shadowing by the contact electrodes are limited.
A resulting structure of the solar cell according to the invention is shown in Fig. 8. The solar cell comprises a p-type substrate 110, having at a bottom a highly doped p+ layer 140, a passivation layer 150 and a rear contact 160. The rear contact 160 forms the base electrode of the solar cell. The substrate 110 comprises a plurality of highly-doped n-'-regions 130, to which front contact electrodes 180 are connected, forming an emitter contact. An n-type region 120 is deposited on the substrate 110 between the highly doped n-'-regions 130 and a passivation layer 170 is deposited between the front contact electrodes 180.
The solar cell according to the invention has a number of advantages over a standard cell shown in Fig. 1. First, due to the fact that the front electrodes are connected to a highly doped n-'-layer, the resistance of silicon-silver contact is reduced, which reduces current losses. Due to the large depth of the n-'-layer, the time and temperature of firing of contact pastes during deposit of front electrodes are increased, due to reduced risk of short-circuit with the p-type substrate, therefore the quality of contact between the silicon and the silver electrode is increased. A thick n-'-layer between the front contact and the p-type substrate increases the lifetime of carriers. Moreover, electrons may travel between the base and the emitter also by the vertical "walls" of the n-regions, thereby electrons of short lifetime can also be used. The structure also allows forming shallow emitter.
Measurements have shown that the efficiency of the solar cell according to the invention is from 17.9% to 18.7%, which is much higher than the efficiency of a standard cell shown in Fig. 1, namely from 16.0% to 17.0%. This gives about 10% efficiency increase. In terms of power, the output power is increased from 2.50-2.65 Wp to 2.8-2.95 Wp. The manufacturing yield has also been increased, due to the reduction of risk of short circuit between the contact electrode and the substrate layer.

Claims (2)

  1. SClaims 1. A method for manufacturing of a solar cell, comprising the steps of: -providing a p-type substrate layer 110, -saw damage etching and texturing the p-type substrate layer 110 so as to create a saw-like pattern on a top surface of the p-type substrate layer 110, -creating regions 131 of deformed structure by laser processing the top surface of the p-type substrate layer 110, -depositing a phosphorus source 132, based on phosphorus acid, on the deformed regions 131, -curing the patterns of phosphorus source by laser radiation, so as to create deformed regions 133 with ultrahigh concentration of phosphorus, -conducting a high temperature diffusion process to create highly-doped n-'-regions 130, having a depth of 25-35 micrometers and a width of 45-50 micrometers, -connecting front contact electrodes 180 to the highly doped n regions 130, the front electrodes having a width smaller than 40 micrometers, -connecting back contact electrodes 160 to the bottom layer of the p-type substrate layer 110.
  2. 2. A solar cell manufactured according to the method of claim 1.
GB0918355.9A 2009-10-20 2009-10-20 A solar cell and a method for manufacturing of a solar cell Expired - Fee Related GB2486626B (en)

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GB2486626A true GB2486626A (en) 2012-06-27
GB2486626A9 GB2486626A9 (en) 2012-08-22
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CN114156169B (en) * 2021-10-15 2022-12-23 浙江爱旭太阳能科技有限公司 Phosphorus diffusion method for SE solar cell and application thereof

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4322571A (en) * 1980-07-17 1982-03-30 The Boeing Company Solar cells and methods for manufacture thereof
JPH02143467A (en) * 1988-11-24 1990-06-01 Sharp Corp Manufacture of solar cell
US6624049B1 (en) * 1996-07-08 2003-09-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
EP1730788A1 (en) * 2004-02-24 2006-12-13 BP Corporation North America Inc. Process for manufacturing photovoltaic cells
EP1964165A2 (en) * 2005-12-21 2008-09-03 Sunpower Corporation Back side contact solar cell structures and fabrication processes
EP2065942A2 (en) * 2007-11-30 2009-06-03 Semiconductor Energy Laboratory Co, Ltd. Method for manufacturing photoelectric conversion device
WO2009075244A1 (en) * 2007-12-13 2009-06-18 Sharp Kabushiki Kaisha Method for manufacturing solar cell
WO2009118861A1 (en) * 2008-03-27 2009-10-01 三菱電機株式会社 Photovolatic power device and method for manufacturing the same

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4322571A (en) * 1980-07-17 1982-03-30 The Boeing Company Solar cells and methods for manufacture thereof
JPH02143467A (en) * 1988-11-24 1990-06-01 Sharp Corp Manufacture of solar cell
US6624049B1 (en) * 1996-07-08 2003-09-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
EP1730788A1 (en) * 2004-02-24 2006-12-13 BP Corporation North America Inc. Process for manufacturing photovoltaic cells
EP1964165A2 (en) * 2005-12-21 2008-09-03 Sunpower Corporation Back side contact solar cell structures and fabrication processes
EP2065942A2 (en) * 2007-11-30 2009-06-03 Semiconductor Energy Laboratory Co, Ltd. Method for manufacturing photoelectric conversion device
WO2009075244A1 (en) * 2007-12-13 2009-06-18 Sharp Kabushiki Kaisha Method for manufacturing solar cell
WO2009118861A1 (en) * 2008-03-27 2009-10-01 三菱電機株式会社 Photovolatic power device and method for manufacturing the same

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
'Epitaxial thin-film Si solar cells', Beaucarne et al. Thin Solid Films Vol. 511-512, pages 533-542 (2006) *

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GB2486626A9 (en) 2012-08-22
GB0918355D0 (en) 2009-12-02

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