GB2348724B - A semiconductor memory device - Google Patents

A semiconductor memory device

Info

Publication number
GB2348724B
GB2348724B GB0015127A GB0015127A GB2348724B GB 2348724 B GB2348724 B GB 2348724B GB 0015127 A GB0015127 A GB 0015127A GB 0015127 A GB0015127 A GB 0015127A GB 2348724 B GB2348724 B GB 2348724B
Authority
GB
United Kingdom
Prior art keywords
memory device
semiconductor memory
semiconductor
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB0015127A
Other versions
GB0015127D0 (en
GB2348724A (en
Inventor
Jung Won Suh
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SK Hynix Inc
Original Assignee
Hyundai Electronics Industries Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1019950048041A external-priority patent/KR0170903B1/en
Application filed by Hyundai Electronics Industries Co Ltd filed Critical Hyundai Electronics Industries Co Ltd
Publication of GB0015127D0 publication Critical patent/GB0015127D0/en
Publication of GB2348724A publication Critical patent/GB2348724A/en
Application granted granted Critical
Publication of GB2348724B publication Critical patent/GB2348724B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/10—Decoders
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/14—Word line organisation; Word line lay-out

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
GB0015127A 1995-12-08 1996-12-09 A semiconductor memory device Expired - Fee Related GB2348724B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1019950048041A KR0170903B1 (en) 1995-12-08 1995-12-08 Sub word line driving circuit and semiconductor memory device using it
GB9625569A GB2307998B (en) 1995-12-08 1996-12-09 Sub word line driving circuit and a semiconductor memory device using the same

Publications (3)

Publication Number Publication Date
GB0015127D0 GB0015127D0 (en) 2000-08-09
GB2348724A GB2348724A (en) 2000-10-11
GB2348724B true GB2348724B (en) 2000-11-22

Family

ID=26310590

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0015127A Expired - Fee Related GB2348724B (en) 1995-12-08 1996-12-09 A semiconductor memory device

Country Status (1)

Country Link
GB (1) GB2348724B (en)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4554646A (en) * 1983-10-17 1985-11-19 Mitsubishi Denki Kabushiki Kaisha Semiconductor memory device
US5148401A (en) * 1989-02-02 1992-09-15 Oki Electric Industry Co., Ltd. DRAM with split word lines
EP0600184A2 (en) * 1992-10-06 1994-06-08 Nec Corporation Semiconductor memory device having dual word line structure
WO1994017554A1 (en) * 1993-01-29 1994-08-04 Oki Electric Industry Co., Ltd. Semiconductor memory device
US5506816A (en) * 1994-09-06 1996-04-09 Nvx Corporation Memory cell array having compact word line arrangement

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4554646A (en) * 1983-10-17 1985-11-19 Mitsubishi Denki Kabushiki Kaisha Semiconductor memory device
US5148401A (en) * 1989-02-02 1992-09-15 Oki Electric Industry Co., Ltd. DRAM with split word lines
EP0600184A2 (en) * 1992-10-06 1994-06-08 Nec Corporation Semiconductor memory device having dual word line structure
WO1994017554A1 (en) * 1993-01-29 1994-08-04 Oki Electric Industry Co., Ltd. Semiconductor memory device
US5506816A (en) * 1994-09-06 1996-04-09 Nvx Corporation Memory cell array having compact word line arrangement

Also Published As

Publication number Publication date
GB0015127D0 (en) 2000-08-09
GB2348724A (en) 2000-10-11

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Legal Events

Date Code Title Description
732E Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)

Free format text: REGISTERED BETWEEN 20120628 AND 20120704

PCNP Patent ceased through non-payment of renewal fee

Effective date: 20151209