GB2222024B - Improvements in integrated circuits - Google Patents

Improvements in integrated circuits

Info

Publication number
GB2222024B
GB2222024B GB8819669A GB8819669A GB2222024B GB 2222024 B GB2222024 B GB 2222024B GB 8819669 A GB8819669 A GB 8819669A GB 8819669 A GB8819669 A GB 8819669A GB 2222024 B GB2222024 B GB 2222024B
Authority
GB
United Kingdom
Prior art keywords
integrated circuits
circuits
integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB8819669A
Other versions
GB8819669D0 (en
GB2222024A (en
Inventor
Roger Leslie Baker
Paul John Rosser
Stephen Robert Jennings
Colin Nicholas Duckworth
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STC PLC
Original Assignee
STC PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STC PLC filed Critical STC PLC
Priority to GB8819669A priority Critical patent/GB2222024B/en
Publication of GB8819669D0 publication Critical patent/GB8819669D0/en
Publication of GB2222024A publication Critical patent/GB2222024A/en
Application granted granted Critical
Publication of GB2222024B publication Critical patent/GB2222024B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
    • H01L23/5252—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising anti-fuses, i.e. connections having their state changed from non-conductive to conductive
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
GB8819669A 1988-08-18 1988-08-18 Improvements in integrated circuits Expired - Fee Related GB2222024B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB8819669A GB2222024B (en) 1988-08-18 1988-08-18 Improvements in integrated circuits

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB8819669A GB2222024B (en) 1988-08-18 1988-08-18 Improvements in integrated circuits

Publications (3)

Publication Number Publication Date
GB8819669D0 GB8819669D0 (en) 1988-09-21
GB2222024A GB2222024A (en) 1990-02-21
GB2222024B true GB2222024B (en) 1992-02-19

Family

ID=10642358

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8819669A Expired - Fee Related GB2222024B (en) 1988-08-18 1988-08-18 Improvements in integrated circuits

Country Status (1)

Country Link
GB (1) GB2222024B (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5825072A (en) 1993-07-07 1998-10-20 Actel Corporation Circuits for ESD Protection of metal to-metal antifuses during processing
US5920109A (en) 1995-06-02 1999-07-06 Actel Corporation Raised tungsten plug antifuse and fabrication processes
US5962910A (en) 1995-10-04 1999-10-05 Actel Corporation Metal-to-metal via-type antifuse
US6111302A (en) 1993-11-22 2000-08-29 Actel Corporation Antifuse structure suitable for VLSI application
US6150705A (en) 1993-07-07 2000-11-21 Actel Corporation Dielectric-polysilicon-dielectric-polysilicon-dielectric antifuse for field programmable logic application

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5552627A (en) * 1990-04-12 1996-09-03 Actel Corporation Electrically programmable antifuse incorporating dielectric and amorphous silicon interlayers
US5272101A (en) * 1990-04-12 1993-12-21 Actel Corporation Electrically programmable antifuse and fabrication processes
US5130777A (en) * 1991-01-04 1992-07-14 Actel Corporation Apparatus for improving antifuse programming yield and reducing antifuse programming time
EP0558176A1 (en) * 1992-02-26 1993-09-01 Actel Corporation Metal-to-metal antifuse with improved diffusion barrier layer
EP0564138A1 (en) * 1992-03-31 1993-10-06 STMicroelectronics, Inc. Field programmable device
WO1994007266A1 (en) * 1992-09-23 1994-03-31 Massachusetts Institute Of Technology A voltage programmable link having reduced capacitance
US5308795A (en) * 1992-11-04 1994-05-03 Actel Corporation Above via metal-to-metal antifuse
US5498895A (en) * 1993-07-07 1996-03-12 Actel Corporation Process ESD protection devices for use with antifuses
US5856234A (en) * 1993-09-14 1999-01-05 Actel Corporation Method of fabricating an antifuse
US5543344A (en) * 1994-10-05 1996-08-06 United Microelectronics Corp. Method of making programmable read-only memory
US5592016A (en) * 1995-04-14 1997-01-07 Actel Corporation Antifuse with improved antifuse material
US5986322A (en) * 1995-06-06 1999-11-16 Mccollum; John L. Reduced leakage antifuse structure
US6218722B1 (en) 1997-02-14 2001-04-17 Gennum Corporation Antifuse based on silicided polysilicon bipolar transistor
US5920771A (en) * 1997-03-17 1999-07-06 Gennum Corporation Method of making antifuse based on silicided single polysilicon bipolar transistor
WO1998036453A1 (en) * 1997-02-14 1998-08-20 Gennum Corporation Antifuse based on silicided polysilicon bipolar transistor
US6627970B2 (en) * 2000-12-20 2003-09-30 Infineon Technologies Ag Integrated semiconductor circuit, in particular a semiconductor memory circuit, having at least one integrated electrical antifuse structure, and a method of producing the structure

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1384785A (en) * 1971-04-23 1975-02-19 Philips Electronic Associated Semiconductor device connections
US4146902A (en) * 1975-12-03 1979-03-27 Nippon Telegraph And Telephone Public Corp. Irreversible semiconductor switching element and semiconductor memory device utilizing the same
EP0054110A1 (en) * 1980-12-15 1982-06-23 Rockwell International Corporation ROM with redundant ROM cells employing a highly resistive polysilicon film for programming the cells
EP0065916A2 (en) * 1981-05-15 1982-12-01 Fairchild Semiconductor Corporation Schottky diode - polycrystalline silicon resistor memory cell
EP0118158A2 (en) * 1983-03-07 1984-09-12 Koninklijke Philips Electronics N.V. Programmable read-only memory structure and method of fabricating such structure
WO1985003599A1 (en) * 1984-02-09 1985-08-15 Ncr Corporation Programmable read-only memory cell and method of fabrication
EP0250078A2 (en) * 1986-05-09 1987-12-23 Actel Corporation Programmable low impedance interconnect circuit element
US4748490A (en) * 1985-08-01 1988-05-31 Texas Instruments Incorporated Deep polysilicon emitter antifuse memory cell

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1384785A (en) * 1971-04-23 1975-02-19 Philips Electronic Associated Semiconductor device connections
US4146902A (en) * 1975-12-03 1979-03-27 Nippon Telegraph And Telephone Public Corp. Irreversible semiconductor switching element and semiconductor memory device utilizing the same
EP0054110A1 (en) * 1980-12-15 1982-06-23 Rockwell International Corporation ROM with redundant ROM cells employing a highly resistive polysilicon film for programming the cells
EP0065916A2 (en) * 1981-05-15 1982-12-01 Fairchild Semiconductor Corporation Schottky diode - polycrystalline silicon resistor memory cell
EP0118158A2 (en) * 1983-03-07 1984-09-12 Koninklijke Philips Electronics N.V. Programmable read-only memory structure and method of fabricating such structure
WO1985003599A1 (en) * 1984-02-09 1985-08-15 Ncr Corporation Programmable read-only memory cell and method of fabrication
US4748490A (en) * 1985-08-01 1988-05-31 Texas Instruments Incorporated Deep polysilicon emitter antifuse memory cell
EP0250078A2 (en) * 1986-05-09 1987-12-23 Actel Corporation Programmable low impedance interconnect circuit element

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5825072A (en) 1993-07-07 1998-10-20 Actel Corporation Circuits for ESD Protection of metal to-metal antifuses during processing
US6150705A (en) 1993-07-07 2000-11-21 Actel Corporation Dielectric-polysilicon-dielectric-polysilicon-dielectric antifuse for field programmable logic application
US6111302A (en) 1993-11-22 2000-08-29 Actel Corporation Antifuse structure suitable for VLSI application
US5920109A (en) 1995-06-02 1999-07-06 Actel Corporation Raised tungsten plug antifuse and fabrication processes
US6124193A (en) 1995-06-02 2000-09-26 Actel Corporation Raised tungsten plug antifuse and fabrication processes
US5962910A (en) 1995-10-04 1999-10-05 Actel Corporation Metal-to-metal via-type antifuse

Also Published As

Publication number Publication date
GB8819669D0 (en) 1988-09-21
GB2222024A (en) 1990-02-21

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Legal Events

Date Code Title Description
732E Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)
732E Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20040818