GB2156148B - Diode - Google Patents

Diode

Info

Publication number
GB2156148B
GB2156148B GB08405736A GB8405736A GB2156148B GB 2156148 B GB2156148 B GB 2156148B GB 08405736 A GB08405736 A GB 08405736A GB 8405736 A GB8405736 A GB 8405736A GB 2156148 B GB2156148 B GB 2156148B
Authority
GB
United Kingdom
Prior art keywords
diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB08405736A
Other versions
GB2156148A (en
Inventor
Peter John Ward
Robert Sydney Walker
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Plessey Co Ltd
Original Assignee
Plessey Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Plessey Co Ltd filed Critical Plessey Co Ltd
Priority to GB08405736A priority Critical patent/GB2156148B/en
Publication of GB2156148A publication Critical patent/GB2156148A/en
Application granted granted Critical
Publication of GB2156148B publication Critical patent/GB2156148B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/872—Schottky diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
GB08405736A 1984-03-05 1984-03-05 Diode Expired GB2156148B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB08405736A GB2156148B (en) 1984-03-05 1984-03-05 Diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB08405736A GB2156148B (en) 1984-03-05 1984-03-05 Diode

Publications (2)

Publication Number Publication Date
GB2156148A GB2156148A (en) 1985-10-02
GB2156148B true GB2156148B (en) 1987-10-21

Family

ID=10557609

Family Applications (1)

Application Number Title Priority Date Filing Date
GB08405736A Expired GB2156148B (en) 1984-03-05 1984-03-05 Diode

Country Status (1)

Country Link
GB (1) GB2156148B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102004060624B4 (en) * 2004-12-16 2010-12-02 Siltronic Ag Semiconductor wafer with epitaxially deposited layer and method for producing the semiconductor wafer

Also Published As

Publication number Publication date
GB2156148A (en) 1985-10-02

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Legal Events

Date Code Title Description
PG Patent granted