GB2111037B - Preparing substrates for semi-conductors - Google Patents

Preparing substrates for semi-conductors

Info

Publication number
GB2111037B
GB2111037B GB08229832A GB8229832A GB2111037B GB 2111037 B GB2111037 B GB 2111037B GB 08229832 A GB08229832 A GB 08229832A GB 8229832 A GB8229832 A GB 8229832A GB 2111037 B GB2111037 B GB 2111037B
Authority
GB
United Kingdom
Prior art keywords
conductors
semi
preparing substrates
substrates
preparing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB08229832A
Other versions
GB2111037A (en
Inventor
John W Peters
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Raytheon Co
Original Assignee
Hughes Aircraft Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hughes Aircraft Co filed Critical Hughes Aircraft Co
Publication of GB2111037A publication Critical patent/GB2111037A/en
Application granted granted Critical
Publication of GB2111037B publication Critical patent/GB2111037B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H01L21/02241—III-V semiconductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02277—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition the reactions being activated by other means than plasma or thermal, e.g. photo-CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
    • H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/469—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers
    • H01L21/471—Inorganic layers
    • H01L21/473—Inorganic layers composed of oxides or glassy oxides or oxide based glass

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Plasma & Fusion (AREA)
  • Formation Of Insulating Films (AREA)
GB08229832A 1981-11-23 1982-10-19 Preparing substrates for semi-conductors Expired GB2111037B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US32378081A 1981-11-23 1981-11-23

Publications (2)

Publication Number Publication Date
GB2111037A GB2111037A (en) 1983-06-29
GB2111037B true GB2111037B (en) 1984-10-17

Family

ID=23260697

Family Applications (1)

Application Number Title Priority Date Filing Date
GB08229832A Expired GB2111037B (en) 1981-11-23 1982-10-19 Preparing substrates for semi-conductors

Country Status (5)

Country Link
JP (1) JPS58155725A (en)
DE (1) DE3242921A1 (en)
FR (1) FR2517121A1 (en)
GB (1) GB2111037B (en)
NL (1) NL8204475A (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59111333A (en) * 1982-12-09 1984-06-27 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Method of forming sio2 by converting sio region into sio2 region
DE3680623D1 (en) * 1985-02-28 1991-09-05 Sony Corp METHOD FOR PRODUCING INSULATING OXIDE LAYERS ON A SEMICONDUCTOR BODY.
DE3545242A1 (en) * 1985-12-20 1987-06-25 Licentia Gmbh STRUCTURED SEMICONDUCTOR BODY
US5178682A (en) * 1988-06-21 1993-01-12 Mitsubishi Denki Kabushiki Kaisha Method for forming a thin layer on a semiconductor substrate and apparatus therefor
JPH01319944A (en) * 1988-06-21 1989-12-26 Mitsubishi Electric Corp Method and apparatus for forming thin film on surface of semiconductor substrate
FR2635915B1 (en) * 1988-08-30 1992-04-30 Loualiche Slimane PROCESS FOR THE MANUFACTURE OF A THIN LAYER OF OXIDE BY DRY WAY ON A III-V MATERIAL, OXIDE LAYER OBTAINED BY THIS PROCESS AND APPLICATION TO A SCHOTTKY DIODE
KR101160373B1 (en) * 2004-05-21 2012-06-26 미츠비시 가스 가가쿠 가부시키가이샤 Method for oxidizing substance and oxidation apparatus therefor
JP6501486B2 (en) * 2014-10-27 2019-04-17 学校法人東海大学 Sterilizer

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3718503A (en) * 1971-07-14 1973-02-27 Us Army Method of forming a diffusion mask barrier on a silicon substrate
DE2155849C3 (en) * 1971-11-10 1979-07-26 Semikron Gesellschaft Fuer Gleichrichterbau Und Elektronik Mbh, 8500 Nuernberg Process for the production of a stabilizing and / or insulating coating on semiconductor surfaces
EP0030798B1 (en) * 1979-12-17 1983-12-28 Hughes Aircraft Company Low temperature process for depositing oxide layers by photochemical vapor deposition

Also Published As

Publication number Publication date
FR2517121A1 (en) 1983-05-27
JPH0436456B2 (en) 1992-06-16
GB2111037A (en) 1983-06-29
JPS58155725A (en) 1983-09-16
DE3242921A1 (en) 1983-08-04
NL8204475A (en) 1983-06-16

Similar Documents

Publication Publication Date Title
GB2111336B (en) Substrate biassing
PT74504B (en) Process for preparing imidazodiazepines
YU98382A (en) Process for preparing cepheme compounds
GB8414914D0 (en) Substrate structures
DE3260638D1 (en) Process for preparing 4-methyl-1-pentene
JPS57198643A (en) Semiconductor substrate
GB2111037B (en) Preparing substrates for semi-conductors
DE3268413D1 (en) Process for preparing chlorotrifluoromethylbenzene
DE3261535D1 (en) Process for preparing aryldiazosulphonates
PL238623A1 (en) Process for preparing 5-phenyl-2s-pentanol
DE3261580D1 (en) Process for preparing 4-haloazetidin-2-ones
GB2108491B (en) Process for preparing 3-exo-methylenecepham derivatives
YU105982A (en) Process for foam-flotation
ZA823608B (en) A process for the preparation of a granular substrate
JPS57126158A (en) Substrate unit
PT75315A (en) Process for preparing novel 2-cyanosteroids
GB2112777B (en) Process for preparing mononitrochlorobenzene
DE3267381D1 (en) Process for preparing beta-chloroalanine
DE3262826D1 (en) Process for preparing m-alkylhydroxybenzene
JPS57139915A (en) Condenser for substrate
GB2101120B (en) 7a-methoxycephem compounds and process for preparing the same
DE3263884D1 (en) Process for preparing alpha-omega-bis-flurosulfato-perfluoroalkanes
DE3260363D1 (en) Process for preparing 3-alkylaminophenols
DE3260454D1 (en) Process for preparing vinyl-phosphonic-acid diesters
GB2108110B (en) Process for preparing 2-oxycephalosporin derivatives

Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee