GB1383165A - Manufacturing semiconductor devices - Google Patents

Manufacturing semiconductor devices

Info

Publication number
GB1383165A
GB1383165A GB2048273A GB2048273A GB1383165A GB 1383165 A GB1383165 A GB 1383165A GB 2048273 A GB2048273 A GB 2048273A GB 2048273 A GB2048273 A GB 2048273A GB 1383165 A GB1383165 A GB 1383165A
Authority
GB
United Kingdom
Prior art keywords
wafers
rod
plane
spine
april
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2048273A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of GB1383165A publication Critical patent/GB1383165A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3043—Making grooves, e.g. cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

1383165 Making semi-conductor devices MITSUBISHI DENKI KK 30 April 1973 [28 April 1972] 20482/73 Heading HIK During one or more processing steps semiconductor wafers under treatment remain attached to a parent semi-conductor body. The wafers are separated only at the stage when individual treatment is necessary to continue manufacture. The Figure shows a cylindrical rod of monoerystalline silicon in which wafers 22 have been defined by saw cuts 18 (or other slits) extending nearly through the rod. The end portions 24 are made more substantial and are used as handling bodies and may have apertures 16 to receive the chucks of an etching or cleaning apparatus &c. The wafers 18 in a set need not all have the same thickness. The spine 20 of the rod may be provided with a plane surface so that the wafer set does not roll. Lot identification numbers (not shown) may be marked on the end faces of the handling bodies 24. In alternative arrangements (Figs. 5 and 6, not shown) the wafers may lie parallel to a plane at an angle to that shown or may be defined by slots parallel to the plane containing the axis of the rod. The united wafers may be subjected to cleaning, etching, impurity diffusion, or semiconductor growth from the liquid phase. When making power diodes or thyristors it may not be necessary to etch away the damaged surface produced by a sawing operation. The wafers may be separated from the spine by cleavage along chosen crystal planes.
GB2048273A 1972-04-28 1973-04-30 Manufacturing semiconductor devices Expired GB1383165A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4306172A JPS495265A (en) 1972-04-28 1972-04-28

Publications (1)

Publication Number Publication Date
GB1383165A true GB1383165A (en) 1975-02-05

Family

ID=12653339

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2048273A Expired GB1383165A (en) 1972-04-28 1973-04-30 Manufacturing semiconductor devices

Country Status (5)

Country Link
JP (1) JPS495265A (en)
DE (1) DE2321501A1 (en)
FR (1) FR2182216B1 (en)
GB (1) GB1383165A (en)
NL (1) NL7305945A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3840588C1 (en) * 1988-12-02 1990-02-22 Westdeutsche Quarzschmelze Gmbh & Co. Kg, 2054 Geesthacht, De Quartz glass container for the thermal treatment of semiconductor wafers
EP1342259A1 (en) * 2000-11-29 2003-09-10 Origin Energy Retail Limited Semiconductor wafer processing to increase the usable planar surface area
US7828983B2 (en) 2001-11-29 2010-11-09 Transform Solar Pty Ltd Semiconductor texturing process

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5255537A (en) * 1975-10-31 1977-05-07 Sumitomo Electric Ind Ltd Chargning device
JPS5421727A (en) * 1977-07-19 1979-02-19 Ricoh Co Ltd Detecting and treating method for wire rupture of corona discharge of copier
DE102006060195A1 (en) * 2006-12-18 2008-06-26 Jacobs University Bremen Ggmbh Edge rounding of wafers

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3128213A (en) * 1961-07-20 1964-04-07 Int Rectifier Corp Method of making a semiconductor device

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3840588C1 (en) * 1988-12-02 1990-02-22 Westdeutsche Quarzschmelze Gmbh & Co. Kg, 2054 Geesthacht, De Quartz glass container for the thermal treatment of semiconductor wafers
EP1342259A1 (en) * 2000-11-29 2003-09-10 Origin Energy Retail Limited Semiconductor wafer processing to increase the usable planar surface area
EP1575087A3 (en) * 2000-11-29 2006-01-18 Origin Energy Solar Pty.Ltd Semiconductor wafer processing to increase the usable planar surface area
EP1342259A4 (en) * 2000-11-29 2006-04-05 Origin Energy Solar Pty Ltd Semiconductor wafer processing to increase the usable planar surface area
US7875794B2 (en) 2000-11-29 2011-01-25 Transform Solar Pty Ltd Semiconductor wafer processing to increase the usable planar surface area
US9583668B2 (en) 2000-11-29 2017-02-28 The Australian National University Semiconductor device
US7828983B2 (en) 2001-11-29 2010-11-09 Transform Solar Pty Ltd Semiconductor texturing process

Also Published As

Publication number Publication date
FR2182216B1 (en) 1977-08-19
NL7305945A (en) 1973-10-30
JPS495265A (en) 1974-01-17
FR2182216A1 (en) 1973-12-07
DE2321501A1 (en) 1973-11-15

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Legal Events

Date Code Title Description
PS Patent sealed
PE20 Patent expired after termination of 20 years

Effective date: 19930429