GB1372779A - Integrated circuits - Google Patents
Integrated circuitsInfo
- Publication number
- GB1372779A GB1372779A GB4108472A GB4108472A GB1372779A GB 1372779 A GB1372779 A GB 1372779A GB 4108472 A GB4108472 A GB 4108472A GB 4108472 A GB4108472 A GB 4108472A GB 1372779 A GB1372779 A GB 1372779A
- Authority
- GB
- United Kingdom
- Prior art keywords
- inclusions
- regions
- impurity
- wafer
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000012535 impurity Substances 0.000 abstract 3
- 238000009792 diffusion process Methods 0.000 abstract 2
- 230000000873 masking effect Effects 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 abstract 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052785 arsenic Inorganic materials 0.000 abstract 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- 229910052733 gallium Inorganic materials 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 239000011574 phosphorus Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/2205—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities from the substrate during epitaxy, e.g. autodoping; Preventing or using autodoping
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Element Separation (AREA)
- Bipolar Transistors (AREA)
Abstract
1372779 Integrated circuit manufacture INTERNATIONAL BUSINESS MACHINES CORP 5 Sept 1972 [22 Nov 1971] 41084/72 Heading H1K When an epitaxial layer is grown over a semiconductor substrate having diffused inclusions in its surface impurity may evaporate into the atmosphere from the inclusions and diffuse back into adjacent areas of the substrate to cause undesirable short circuits between adjacent inclusions. This is compensated for by diffusing impurity determinative of the conductivity type opposite to that of the inclusions into their surfaces prior to the epitaxial deposition. In the embodiment the inclusions are N+ subcollector regions formed by diffusing arsenic or phosphorus into a silicon wafer via oxide masking. Boron or gallium is then diffused as compensating impurity via the same mask to provide shallow P+ regions. An N-type layer is epitaxially deposited after removal of the mask and P-type isolating regions formed in it by masked acceptor diffusion. Subsequent masked acceptor and donor diffusions provide base and emitter regions and contact is made thereto and to the collector region via holes in oxide masking. The shallow P+ regions are so doped that by the time the above processes are complete they will have been converted to N-type. If desired the wafer may have a plurality of integrated circuits including diodes and resistors formed on it. These may subsequently be diced from the wafer.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US20102471A | 1971-11-22 | 1971-11-22 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1372779A true GB1372779A (en) | 1974-11-06 |
Family
ID=22744168
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB4108472A Expired GB1372779A (en) | 1971-11-22 | 1972-09-05 | Integrated circuits |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPS5348073B2 (en) |
| DE (1) | DE2250990A1 (en) |
| FR (1) | FR2160830B1 (en) |
| GB (1) | GB1372779A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5410667A (en) * | 1977-06-27 | 1979-01-26 | Hitachi Ltd | Semiconductor device |
| NL8006827A (en) * | 1980-12-17 | 1982-07-16 | Philips Nv | METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE |
| JPS57128953A (en) * | 1981-02-02 | 1982-08-10 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor integrated circuit |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1051562A (en) * | 1963-11-26 |
-
1972
- 1972-09-05 GB GB4108472A patent/GB1372779A/en not_active Expired
- 1972-10-06 JP JP9997372A patent/JPS5348073B2/ja not_active Expired
- 1972-10-18 DE DE19722250990 patent/DE2250990A1/en active Pending
- 1972-10-25 FR FR7238491A patent/FR2160830B1/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5348073B2 (en) | 1978-12-26 |
| FR2160830A1 (en) | 1973-07-06 |
| DE2250990A1 (en) | 1973-05-24 |
| JPS4860574A (en) | 1973-08-24 |
| FR2160830B1 (en) | 1974-08-19 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| PCNP | Patent ceased through non-payment of renewal fee |