GB1233404A - - Google Patents

Info

Publication number
GB1233404A
GB1233404A GB1233404DA GB1233404A GB 1233404 A GB1233404 A GB 1233404A GB 1233404D A GB1233404D A GB 1233404DA GB 1233404 A GB1233404 A GB 1233404A
Authority
GB
United Kingdom
Prior art keywords
target
anode
magnetic field
filament
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of GB1233404A publication Critical patent/GB1233404A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/46—Sputtering by ion beam produced by an external ion source
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/354—Introduction of auxiliary energy into the plasma
    • C23C14/355—Introduction of auxiliary energy into the plasma using electrons, e.g. triode sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Plasma Technology (AREA)

Abstract

1,233,404. Sputtering. SOC. ALSACIENNE DE CONSTRUCTIONS ATOMIQUES DE TELECOMMUNICATIONS ET D'ELECTRONIQUE. June 20, 1968 [June 22, 1967], No.29457/68. Heading C7F. In a method of sputtering, electrons issuing from a heated filament 2 pass through an orifice 5 in a diaphragm, and the beam of electrons so formed is subjected to the concurrent effects of an electric field created by a hollow open-ended cylindrical anode 6 coaxial with said beam and a magnetic field parallel to the axis of the anode created as by a coil 7, so that a plasma pencil is established parallel to the surface of a target cathode 8 by the ionization of a gas within the chamber 1, which plasma causes target material 8 to be sputtered on to the substrate 10 which is held close to and opposite the target. The housing 3 containing filament 2 may be watercooled by means of tubes 4, and target 8 may be oil-cooled by means of tubes 9. The gas in vessel 1 may be argon at a pressure of 10<SP>-3</SP> to 10<SP>-4</SP>. Torr, and is introduced through duct 12a. An alternative apparatus is described consisting of two separate vacuum chambers, the first containing the heated filament and anode corresponding to 2 and 6 above and surrounded by the magnetic field-creating means corresponding to 7, and the second chamber containing the target and substrate assembly corresponding to 8, 9, and 10 above, the two chambers having a communicating passage through which the plasma pencil passes. The following apparatus parameters are quoted: filament temperature 2000-2800‹C., anode voltage 50-200 V, anode current 1-10 amp, ion current density up to 20mA/cm<SP>2</SP>, target voltage -600 to -1500 V, and magnetic field, 100 to 500 gauss.
GB1233404D 1967-06-22 1968-06-20 Expired GB1233404A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR111571A FR1534917A (en) 1967-06-22 1967-06-22 Improvements in obtaining deposits by cathodic sputtering

Publications (1)

Publication Number Publication Date
GB1233404A true GB1233404A (en) 1971-05-26

Family

ID=8633649

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1233404D Expired GB1233404A (en) 1967-06-22 1968-06-20

Country Status (4)

Country Link
US (1) US3616452A (en)
CH (1) CH473908A (en)
FR (1) FR1534917A (en)
GB (1) GB1233404A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2599587C1 (en) * 2015-05-27 2016-10-10 Российская Федерация от имени которой выступает Государственная корпорация по атомной энергии "Росатом" Device for application of diffusion coatings

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH551497A (en) * 1971-10-06 1974-07-15 Balzers Patent Beteilig Ag ARRANGEMENT FOR THE ATOMIZATION OF SUBSTANCES USING AN ELECTRIC LOW VOLTAGE DISCHARGE.
US4038171A (en) * 1976-03-31 1977-07-26 Battelle Memorial Institute Supported plasma sputtering apparatus for high deposition rate over large area
US4175029A (en) * 1978-03-16 1979-11-20 Dmitriev Jury A Apparatus for ion plasma coating of articles
US4440108A (en) * 1982-09-24 1984-04-03 Spire Corporation Ion beam coating apparatus
JPH02163368A (en) * 1988-12-15 1990-06-22 Matsushita Electric Ind Co Ltd Sputtering device
US5962923A (en) 1995-08-07 1999-10-05 Applied Materials, Inc. Semiconductor device having a low thermal budget metal filling and planarization of contacts, vias and trenches
US6238533B1 (en) * 1995-08-07 2001-05-29 Applied Materials, Inc. Integrated PVD system for aluminum hole filling using ionized metal adhesion layer
JP4947834B2 (en) * 1997-11-26 2012-06-06 アプライド マテリアルズ インコーポレイテッド Damage-free coating engraving deposition method
US7253109B2 (en) 1997-11-26 2007-08-07 Applied Materials, Inc. Method of depositing a tantalum nitride/tantalum diffusion barrier layer system
US6348764B1 (en) * 2000-08-17 2002-02-19 Taiwan Semiconductor Manufacturing Company, Ltd Indirect hot cathode (IHC) ion source
EP1630260B1 (en) * 2004-08-20 2011-07-13 JDS Uniphase Inc. Magnetic latch for a vapour deposition system
US8500973B2 (en) * 2004-08-20 2013-08-06 Jds Uniphase Corporation Anode for sputter coating
US7954219B2 (en) * 2004-08-20 2011-06-07 Jds Uniphase Corporation Substrate holder assembly device
US7879209B2 (en) * 2004-08-20 2011-02-01 Jds Uniphase Corporation Cathode for sputter coating
US20060049041A1 (en) * 2004-08-20 2006-03-09 Jds Uniphase Corporation Anode for sputter coating
US7785456B2 (en) * 2004-10-19 2010-08-31 Jds Uniphase Corporation Magnetic latch for a vapour deposition system
SE529375C2 (en) * 2005-07-22 2007-07-24 Sandvik Intellectual Property Device for improved plasma activity in PVD reactors

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2599587C1 (en) * 2015-05-27 2016-10-10 Российская Федерация от имени которой выступает Государственная корпорация по атомной энергии "Росатом" Device for application of diffusion coatings

Also Published As

Publication number Publication date
US3616452A (en) 1971-10-26
DE1765625B2 (en) 1976-01-29
CH473908A (en) 1969-06-15
DE1765625A1 (en) 1972-04-13
FR1534917A (en) 1968-08-02

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee