GB1156777A - Manufacture of Semiconductor Elements. - Google Patents
Manufacture of Semiconductor Elements.Info
- Publication number
- GB1156777A GB1156777A GB2989167A GB2989167A GB1156777A GB 1156777 A GB1156777 A GB 1156777A GB 2989167 A GB2989167 A GB 2989167A GB 2989167 A GB2989167 A GB 2989167A GB 1156777 A GB1156777 A GB 1156777A
- Authority
- GB
- United Kingdom
- Prior art keywords
- wafer
- grooves
- junction
- semi
- lines
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Dicing (AREA)
Abstract
1,156,777. Subdividing semi-conductor wafers. WESTINGHOUSE BRAKE & SIGNAL CO. Ltd. 29 May, 1968 [28 June, 1967], No. 29891/67. Heading H1K. A semi-conductor wafer 1 is provided with a pn-junction 2 parallel to its major faces, e.g. by diffusion, criss-cross grooves 5, 6 are formed in one major face 3 to a depth greater than that of the junction 2, and the wafer is then separated into discrete elements by breaking along the lines of the grooves 5, 6. The grooves 5, 6 may be formed by an oscillating cutter fed with abrasive material. After grooving the wafer is cleaned by etching and the exposed edges of the junction 2 are protected. The ungrooved face is then scored with a diamond cutter opposite the lines of the grooves 5, 6 and the wafer is broken.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB2989167A GB1156777A (en) | 1967-06-28 | 1967-06-28 | Manufacture of Semiconductor Elements. |
NL6808992A NL6808992A (en) | 1967-06-28 | 1968-06-26 | |
FR1570291D FR1570291A (en) | 1967-06-28 | 1968-06-27 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB2989167A GB1156777A (en) | 1967-06-28 | 1967-06-28 | Manufacture of Semiconductor Elements. |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1156777A true GB1156777A (en) | 1969-07-02 |
Family
ID=10298862
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB2989167A Expired GB1156777A (en) | 1967-06-28 | 1967-06-28 | Manufacture of Semiconductor Elements. |
Country Status (3)
Country | Link |
---|---|
FR (1) | FR1570291A (en) |
GB (1) | GB1156777A (en) |
NL (1) | NL6808992A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2080712A1 (en) * | 1970-02-24 | 1971-11-19 | Rca Corp | |
FR2220877A1 (en) * | 1973-03-09 | 1974-10-04 | Thomson Csf | PIN diodes collectively made from PIN chip - are formed between electrodes by etching parallel trenches in two stages followed by separation |
-
1967
- 1967-06-28 GB GB2989167A patent/GB1156777A/en not_active Expired
-
1968
- 1968-06-26 NL NL6808992A patent/NL6808992A/xx unknown
- 1968-06-27 FR FR1570291D patent/FR1570291A/fr not_active Expired
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2080712A1 (en) * | 1970-02-24 | 1971-11-19 | Rca Corp | |
FR2220877A1 (en) * | 1973-03-09 | 1974-10-04 | Thomson Csf | PIN diodes collectively made from PIN chip - are formed between electrodes by etching parallel trenches in two stages followed by separation |
Also Published As
Publication number | Publication date |
---|---|
FR1570291A (en) | 1969-06-06 |
NL6808992A (en) | 1968-12-30 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed | ||
435 | Patent endorsed 'licences of right' on the date specified (sect. 35/1949) | ||
PCNP | Patent ceased through non-payment of renewal fee |