FR2974450B1 - Intégration d'une couche 2d d'oxyde métallique sur un substrat plastique conducteur - Google Patents

Intégration d'une couche 2d d'oxyde métallique sur un substrat plastique conducteur

Info

Publication number
FR2974450B1
FR2974450B1 FR1153398A FR1153398A FR2974450B1 FR 2974450 B1 FR2974450 B1 FR 2974450B1 FR 1153398 A FR1153398 A FR 1153398A FR 1153398 A FR1153398 A FR 1153398A FR 2974450 B1 FR2974450 B1 FR 2974450B1
Authority
FR
France
Prior art keywords
plastic substrate
conductive plastic
integration
metal oxide
oxide layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1153398A
Other languages
English (en)
Other versions
FR2974450A1 (fr
Inventor
Solenn Berson
Stephane Guillerez
Valentina Ivanova-Hristova
Sylvia Sanchez
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA, Commissariat a lEnergie Atomique et aux Energies Alternatives CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to FR1153398A priority Critical patent/FR2974450B1/fr
Priority to JP2014505693A priority patent/JP2014512684A/ja
Priority to DE212012000087U priority patent/DE212012000087U1/de
Priority to PCT/FR2012/050600 priority patent/WO2012143632A1/fr
Priority to KR1020137027198A priority patent/KR20140033353A/ko
Publication of FR2974450A1 publication Critical patent/FR2974450A1/fr
Priority to US14/041,163 priority patent/US20140060644A1/en
Application granted granted Critical
Publication of FR2974450B1 publication Critical patent/FR2974450B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G9/00—Compounds of zinc
    • C01G9/02—Oxides; Hydroxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/81—Electrodes
    • H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/54—Electroplating of non-metallic surfaces
    • C25D5/56—Electroplating of non-metallic surfaces of plastics
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D9/00—Electrolytic coating other than with metals
    • C25D9/04—Electrolytic coating other than with metals with inorganic materials
    • C25D9/08—Electrolytic coating other than with metals with inorganic materials by cathodic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20—Light-sensitive devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H01L31/022483—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of zinc oxide [ZnO]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
    • H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
    • H10K30/152—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2 the wide bandgap semiconductor comprising zinc oxide, e.g. ZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/125—Deposition of organic active material using liquid deposition, e.g. spin coating using electrolytic deposition e.g. in-situ electropolymerisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20—Light-sensitive devices
    • H01G9/2027—Light-sensitive devices comprising an oxide semiconductor electrode
    • H01G9/204—Light-sensitive devices comprising an oxide semiconductor electrode comprising zinc oxides, e.g. ZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50—Photovoltaic [PV] devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Electromagnetism (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Power Engineering (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electrochemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)
  • Laminated Bodies (AREA)
FR1153398A 2011-04-19 2011-04-19 Intégration d'une couche 2d d'oxyde métallique sur un substrat plastique conducteur Active FR2974450B1 (fr)

Priority Applications (6)

Application Number Priority Date Filing Date Title
FR1153398A FR2974450B1 (fr) 2011-04-19 2011-04-19 Intégration d'une couche 2d d'oxyde métallique sur un substrat plastique conducteur
JP2014505693A JP2014512684A (ja) 2011-04-19 2012-03-22 導電性プラスチック基板へのＺｎＯの一体化をベースにした２Ｄ結晶質被膜
DE212012000087U DE212012000087U1 (de) 2011-04-19 2012-03-22 Eine kristalline 2D-Schicht auf der Grundlage von ZnO auf einem leitfähigen Kunststoffsubstrat
PCT/FR2012/050600 WO2012143632A1 (fr) 2011-04-19 2012-03-22 Integration d'une couche 2d cristalline a base de zno sur un substrat plastique conducteur
KR1020137027198A KR20140033353A (ko) 2011-04-19 2012-03-22 전도성 플라스틱 기판 상에서의 zno 통합에 기반한 2d 결정성 필름
US14/041,163 US20140060644A1 (en) 2011-04-19 2013-09-30 2d crystalline film based on zno integration of onto a conductive plastic substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1153398A FR2974450B1 (fr) 2011-04-19 2011-04-19 Intégration d'une couche 2d d'oxyde métallique sur un substrat plastique conducteur

Publications (2)

Publication Number Publication Date
FR2974450A1 FR2974450A1 (fr) 2012-10-26
FR2974450B1 true FR2974450B1 (fr) 2013-12-20

Family

ID=46017923

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1153398A Active FR2974450B1 (fr) 2011-04-19 2011-04-19 Intégration d'une couche 2d d'oxyde métallique sur un substrat plastique conducteur

Country Status (6)

Country Link
US (1) US20140060644A1 (fr)
JP (1) JP2014512684A (fr)
KR (1) KR20140033353A (fr)
DE (1) DE212012000087U1 (fr)
FR (1) FR2974450B1 (fr)
WO (1) WO2012143632A1 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103147130B (zh) * 2013-01-27 2016-05-11 浙江大学 过渡金属元素掺杂的ZnO纳米阵列的制备方法及包括该纳米阵列的半导体器件
KR101812698B1 (ko) * 2015-08-28 2018-01-30 전북대학교산학협력단 금속 산화물이 성장된 탄소섬유 제조 방법
KR102363287B1 (ko) 2015-09-02 2022-02-14 삼성전자주식회사 도전체, 그 제조 방법, 및 이를 포함하는 소자

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2578556B1 (fr) * 1985-03-05 1989-12-22 Popescu Francine Bain galvanique pour l'electrodeposition d'alliage zinc-cobalt brillant
US6106689A (en) * 1997-01-20 2000-08-22 Canon Kabushiki Kaisha Process for forming zinc oxide film and processes for producing semiconductor device substrate and photo-electricity generating device using the film
US6576112B2 (en) * 2000-09-19 2003-06-10 Canon Kabushiki Kaisha Method of forming zinc oxide film and process for producing photovoltaic device using it
JP4622075B2 (ja) * 2000-10-03 2011-02-02 凸版印刷株式会社 透明導電性材料およびその製造方法
JP4222466B2 (ja) * 2001-06-14 2009-02-12 富士フイルム株式会社 電荷輸送材料、それを用いた光電変換素子及び光電池、並びにピリジン化合物
JP3883120B2 (ja) * 2002-03-29 2007-02-21 財団法人名古屋産業科学研究所 色素増感太陽電池基体用の多孔質酸化亜鉛薄膜及び色素増感太陽電池の光電極材料用の酸化亜鉛／色素複合薄膜並びにこれらの製造方法、酸化亜鉛／色素複合薄膜を光電極材料に用いる色素増感太陽電池
EP1548157A1 (fr) * 2003-12-22 2005-06-29 Henkel KGaA Protection contre la corrosion par des couches d'oxide de métal électrochimiquement déposées sur des substrats métalliques
JP5207104B2 (ja) * 2007-03-29 2013-06-12 Ｔｄｋ株式会社 電極及びその製造方法、並びに色素増感型太陽電池
JP2009016179A (ja) * 2007-07-04 2009-01-22 Kaneka Corp 透明導電膜とその製造方法
GB0802934D0 (en) * 2008-02-18 2008-03-26 Univ Denmark Tech Dtu Air stable photovoltaic device
US20100200408A1 (en) * 2009-02-11 2010-08-12 United Solar Ovonic Llc Method and apparatus for the solution deposition of high quality oxide material

Also Published As

Publication number Publication date
JP2014512684A (ja) 2014-05-22
KR20140033353A (ko) 2014-03-18
FR2974450A1 (fr) 2012-10-26
WO2012143632A1 (fr) 2012-10-26
DE212012000087U1 (de) 2013-11-26
US20140060644A1 (en) 2014-03-06

Similar Documents

Publication Publication Date Title
FR2982853B1 (fr) Procede de fabrication de film de graphene
FR2982422B1 (fr) Substrat conducteur pour cellule photovoltaique
MY172449A (en) Method for producing a substrate coated with a stack including a conductive transparent oxide film
MY185883A (en) Perovskite material layer processing
EA201790487A3 (ru) Получение многослойного оконного стекла
WO2014085315A3 (fr) Systèmes de dépôt à vitesse élevée et procédés pour la formation de couches de barrière hermétiques
MA34960B1 (fr) Preparation de film contenant une base sans sidenafil et son procede
FR2974450B1 (fr) Intégration d'une couche 2d d'oxyde métallique sur un substrat plastique conducteur
FR2981646B1 (fr) Vitrage de controle solaire comprenant une couche d'un alliage nicu
MY171609A (en) Laser etching a stack of thin layers for a connection of a photovoltaic cell
MX2015004299A (es) Electrodo transparente y metodo de produccion asociado.
IL200539A0 (en) Method and apparatus for the surface modification of flat substrates
WO2011160814A3 (fr) Procédé de création d'une région dopée au bore passivé, en particulier lors de la fabrication d'une cellule solaire, et cellule solaire présentant une région de diffusion de bore passivé
WO2010093622A3 (fr) Substrat pour dispositif à semi-conducteurs et son procédé de fabrication
FI20105982A0 (fi) Läpinäkyvällä johtavalla oksidikerroksella varustettu substraatti ja sen valmistusmenetelmä
MY152203A (en) Methods of forming a window layer in a cadmium telluride based thin film photovoltaic device
WO2011085095A3 (fr) Expression de protéine améliorée
PL407336A1 (pl) Struktura ogniwa fotowoltaicznego oraz sposób wykonania struktury ogniwa fotowoltaicznego
WO2014074982A3 (fr) Procédés de recuit d'une couche de film d'oxyde transparent conducteur destinés à être utilisés dans un dispositif photovoltaïque en couches minces
WO2010093610A3 (fr) Procédé et appareil de dépôt de solution à orientation de substrat partiphobique (inhibant l'accumulation des particules)
WO2010093633A3 (fr) Procédé et appareil pour le dépôt en solution d'un matériau à base d'oxydes
EA201270368A1 (ru) Активация поверхностей электродов с помощью методов вакуумного осаждения в непрерывном процессе
MX364086B (es) Celdas solares nanocristalinas basadas en capas delgadas de sulfuro de antimonio y sulfuro de indio y método de su obtención.
EA201391462A1 (ru) Стеклянная подложка со слоем, имеющим небольшую шероховатость
FR2981363B1 (fr) Procede de culture de levures oleagineuses sur substrat carbone

Legal Events

Date Code Title Description
PLFP Fee payment

Year of fee payment: 6

PLFP Fee payment

Year of fee payment: 7

PLFP Fee payment

Year of fee payment: 8

PLFP Fee payment

Year of fee payment: 9

PLFP Fee payment

Year of fee payment: 10

PLFP Fee payment

Year of fee payment: 11

PLFP Fee payment

Year of fee payment: 12

PLFP Fee payment

Year of fee payment: 13

PLFP Fee payment

Year of fee payment: 14