FR2358751A1 - Composant a semi-conducteurs comportant un contact schottky comportant une resistance serie de faible valeur et procede pour sa fabrication - Google Patents

Composant a semi-conducteurs comportant un contact schottky comportant une resistance serie de faible valeur et procede pour sa fabrication

Info

Publication number
FR2358751A1
FR2358751A1 FR7721107A FR7721107A FR2358751A1 FR 2358751 A1 FR2358751 A1 FR 2358751A1 FR 7721107 A FR7721107 A FR 7721107A FR 7721107 A FR7721107 A FR 7721107A FR 2358751 A1 FR2358751 A1 FR 2358751A1
Authority
FR
France
Prior art keywords
low value
semiconductor component
schottky contact
manufacturing
component including
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7721107A
Other languages
English (en)
Other versions
FR2358751B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of FR2358751A1 publication Critical patent/FR2358751A1/fr
Application granted granted Critical
Publication of FR2358751B1 publication Critical patent/FR2358751B1/fr
Granted legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/2654—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds
    • H01L21/26546—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds of electrically active species
    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/2654—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds
    • H01L21/26546—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds of electrically active species
    • H01L21/26553—Through-implantation
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/266—Bombardment with radiation with high-energy radiation producing ion implantation using masks
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
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    • H01L21/28537—Deposition of Schottky electrodes
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    • H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
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    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
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    • H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
    • H01L21/28581—Deposition of Schottky electrodes
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
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    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/47—Schottky barrier electrodes
    • H01L29/475—Schottky barrier electrodes on AIII-BV compounds
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66848—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET
    • H01L29/66856—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET with an active layer made of a group 13/15 material
    • H01L29/66863—Lateral single gate transistors
    • H01L29/66871—Processes wherein the final gate is made after the formation of the source and drain regions in the active layer, e.g. dummy-gate processes
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    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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    • H01L29/76—Unipolar devices, e.g. field effect transistors
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    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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    • H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
    • H01L29/8128—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate with recessed gate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
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    • Y10S148/00—Metal treatment
    • Y10S148/10—Lift-off masking
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
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    • Y10S148/147—Silicides

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Ceramic Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

L'invention concerne un composant à semi-conducteurs comportant un contact Schottky comportant une résistance série de faible valeur et un procédé pour sa fabrication. Selon ce procédé, les parties 9, 10 de la couche 24, qui s'étendent au-dessous des autres électrodes 15, 16 jusqu'à la couche d'appauvrissement partant de la première électrode 17, sont dopées environ 10 à 100 fois plus fortement que la région 11 de la couche 24, située au-dessous de la premiere électrode 17. Application notamment à la fabrication de composants à semi-conducteurs Schottky à vitesse élevée de commutation.
FR7721107A 1976-07-15 1977-07-08 Composant a semi-conducteurs comportant un contact schottky comportant une resistance serie de faible valeur et procede pour sa fabrication Granted FR2358751A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2631873A DE2631873C2 (de) 1976-07-15 1976-07-15 Verfahren zur Herstellung eines Halbleiterbauelements mit einem Schottky-Kontakt auf einem zu einem anderen Bereich justierten Gatebereich und mit kleinem Serienwiderstand

Publications (2)

Publication Number Publication Date
FR2358751A1 true FR2358751A1 (fr) 1978-02-10
FR2358751B1 FR2358751B1 (fr) 1982-11-19

Family

ID=5983114

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7721107A Granted FR2358751A1 (fr) 1976-07-15 1977-07-08 Composant a semi-conducteurs comportant un contact schottky comportant une resistance serie de faible valeur et procede pour sa fabrication

Country Status (6)

Country Link
US (1) US4173063A (fr)
JP (1) JPS5310284A (fr)
DE (1) DE2631873C2 (fr)
FR (1) FR2358751A1 (fr)
GB (1) GB1522296A (fr)
IT (1) IT1085840B (fr)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0034729A2 (fr) * 1980-02-15 1981-09-02 Siemens Aktiengesellschaft Procédé de fabrication d'un dispositif semiconducteur GaAs
EP0063139A1 (fr) * 1980-10-28 1982-10-27 Hughes Aircraft Company Procede de fabrication d'un transistor bipolaire iii-v par implantation selective d'ions et dispositif obtenu selon ce procede
FR2513439A1 (fr) * 1981-09-18 1983-03-25 Labo Electronique Physique Procede de traitement de substrat de gaas, par implantation ionique, et substrats ainsi obtenus
FR2525028A1 (fr) * 1982-04-09 1983-10-14 Chauffage Nouvelles Tech Procede de fabrication de transistors a effet de champ, en gaas, par implantations ioniques et transistors ainsi obtenus
EP0093971A2 (fr) * 1982-04-28 1983-11-16 Kabushiki Kaisha Toshiba Dispositif semi-conducteur comprenant une couche intermédiaire d'un élément de transition et procédé pour le fabriquer
EP0105324A1 (fr) * 1982-04-12 1984-04-18 Motorola, Inc. CONTACT OHMIQUE POUR GaAs DE TYPE N
EP0355619A1 (fr) * 1988-08-26 1990-02-28 Fujitsu Limited Méthode de production d'un transistor à porte enfoncée
EP0412502A1 (fr) * 1989-08-11 1991-02-13 Kabushiki Kaisha Toshiba Méthode pour faire un transistor à effet de champ du type MES dans un semi-conducteur composé III-V
US5204278A (en) * 1989-08-11 1993-04-20 Kabushiki Kaisha Toshiba Method of making MES field effect transistor using III-V compound semiconductor

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2419586A1 (fr) * 1978-03-08 1979-10-05 Thomson Csf Circuit integre et son procede de fabrication
US4357178A (en) * 1978-12-20 1982-11-02 Ibm Corporation Schottky barrier diode with controlled characteristics and fabrication method
US4373166A (en) * 1978-12-20 1983-02-08 Ibm Corporation Schottky Barrier diode with controlled characteristics
US4313971A (en) * 1979-05-29 1982-02-02 Rca Corporation Method of fabricating a Schottky barrier contact
FR2461358A1 (fr) * 1979-07-06 1981-01-30 Thomson Csf Procede de realisation d'un transistor a effet de champ a grille auto-alignee, et transistor obtenu par ce procede
US4379005A (en) * 1979-10-26 1983-04-05 International Business Machines Corporation Semiconductor device fabrication
US4393578A (en) * 1980-01-02 1983-07-19 General Electric Company Method of making silicon-on-sapphire FET
US4523368A (en) * 1980-03-03 1985-06-18 Raytheon Company Semiconductor devices and manufacturing methods
JPS57102075A (en) * 1980-12-17 1982-06-24 Fujitsu Ltd Semiconductor device and manufacture thereof
US4357180A (en) * 1981-01-26 1982-11-02 The United States Of America As Represented By The Secretary Of The Navy Annealing of ion-implanted GaAs and InP semiconductors
US4694563A (en) * 1981-01-29 1987-09-22 Sumitomo Electric Industries, Ltd. Process for making Schottky-barrier gate FET
JPS5851572A (ja) * 1981-09-22 1983-03-26 Fujitsu Ltd 半導体装置の製造方法
JPS58130575A (ja) * 1982-01-29 1983-08-04 Hitachi Ltd 電界効果トランジスタの製造方法
US4499481A (en) * 1983-09-14 1985-02-12 The United States Of America As Represented By The Secretary Of The Navy Heterojunction Schottky gate MESFET with lower channel ridge barrier
US5210042A (en) * 1983-09-26 1993-05-11 Fujitsu Limited Method of producing semiconductor device
JPS60130844A (ja) * 1983-12-20 1985-07-12 Toshiba Corp 半導体装置の製造方法
JPS60193331A (ja) * 1984-03-15 1985-10-01 Nec Corp 半導体装置の製造方法
JPS6242568A (ja) * 1985-08-20 1987-02-24 Matsushita Electronics Corp 電界効果トランジスタの製造方法
JPH04171733A (ja) * 1990-11-02 1992-06-18 Matsushita Electric Ind Co Ltd 電界効果トランジスタの製造方法
SE9503631D0 (sv) * 1995-10-18 1995-10-18 Abb Research Ltd A method for producing a semiconductor device comprising an implantation step
US5849620A (en) * 1995-10-18 1998-12-15 Abb Research Ltd. Method for producing a semiconductor device comprising an implantation step
KR20130103818A (ko) 2003-10-10 2013-09-24 벨로시스 파마슈티컬스 에이/에스 피브레이트를 포함하는 고형 제제
US7923362B2 (en) 2005-06-08 2011-04-12 Telefunken Semiconductors Gmbh & Co. Kg Method for manufacturing a metal-semiconductor contact in semiconductor components
DE102005026301B3 (de) * 2005-06-08 2007-01-11 Atmel Germany Gmbh Verfahren zum Herstellen eines Metall- Halbleiter-Kontakts bei Halbleiterbauelementen
US10014383B2 (en) * 2014-12-17 2018-07-03 Infineon Technologies Ag Method for manufacturing a semiconductor device comprising a metal nitride layer and semiconductor device
EP3136426B1 (fr) * 2015-08-24 2019-04-03 IMEC vzw Procédé de production d'un transistor à effet de champ à jonction sur un substrat semi-conducteur
RU2650350C1 (ru) * 2017-02-21 2018-04-11 Федеральное государственное бюджетное образовательное учреждение высшего образования "Чеченский государственный университет" Способ изготовления полупроводникового прибора

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CH461646A (de) * 1967-04-18 1968-08-31 Ibm Feld-Effekt-Transistor und Verfahren zu seiner Herstellung
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EP0034729A3 (en) * 1980-02-15 1985-12-04 Siemens Aktiengesellschaft Process for the manufacture of an a iii b v semiconductor arrangement and semiconductor device made by this process
EP0034729A2 (fr) * 1980-02-15 1981-09-02 Siemens Aktiengesellschaft Procédé de fabrication d'un dispositif semiconducteur GaAs
EP0063139A1 (fr) * 1980-10-28 1982-10-27 Hughes Aircraft Company Procede de fabrication d'un transistor bipolaire iii-v par implantation selective d'ions et dispositif obtenu selon ce procede
EP0063139A4 (fr) * 1980-10-28 1984-02-07 Hughes Aircraft Co Procede de fabrication d'un transistor bipolaire iii-v par implantation selective d'ions et dispositif obtenu selon ce procede.
EP0075368A3 (en) * 1981-09-18 1984-08-29 Laboratoires D'electronique Et De Physique Appliquee L.E.P. Method of making a gaas semiconductor device by ion implantation, and substrate and device so obtained
FR2513439A1 (fr) * 1981-09-18 1983-03-25 Labo Electronique Physique Procede de traitement de substrat de gaas, par implantation ionique, et substrats ainsi obtenus
EP0075368A2 (fr) * 1981-09-18 1983-03-30 Laboratoires D'electronique Et De Physique Appliquee L.E.P. Procédé de fabrication d'un dispositif semi-conducteur en GaAs par implantations ioniques, ainsi que substrat et dispositif ainsi obtenus
FR2525028A1 (fr) * 1982-04-09 1983-10-14 Chauffage Nouvelles Tech Procede de fabrication de transistors a effet de champ, en gaas, par implantations ioniques et transistors ainsi obtenus
EP0092266A1 (fr) * 1982-04-09 1983-10-26 Laboratoires D'electronique Et De Physique Appliquee L.E.P. Procédé de fabrication de transistors à effet de champ, en GaAs, par implantations ioniques et transistors ainsi obtenus
EP0105324A1 (fr) * 1982-04-12 1984-04-18 Motorola, Inc. CONTACT OHMIQUE POUR GaAs DE TYPE N
EP0105324A4 (fr) * 1982-04-12 1986-07-24 Motorola Inc CONTACT OHMIQUE POUR GaAs DE TYPE N.
EP0093971A3 (en) * 1982-04-28 1985-01-30 Kabushiki Kaisha Toshiba Semiconductor device having an interstitial transition element layer and method of manufacturing the same
EP0093971A2 (fr) * 1982-04-28 1983-11-16 Kabushiki Kaisha Toshiba Dispositif semi-conducteur comprenant une couche intermédiaire d'un élément de transition et procédé pour le fabriquer
EP0355619A1 (fr) * 1988-08-26 1990-02-28 Fujitsu Limited Méthode de production d'un transistor à porte enfoncée
EP0412502A1 (fr) * 1989-08-11 1991-02-13 Kabushiki Kaisha Toshiba Méthode pour faire un transistor à effet de champ du type MES dans un semi-conducteur composé III-V
US5204278A (en) * 1989-08-11 1993-04-20 Kabushiki Kaisha Toshiba Method of making MES field effect transistor using III-V compound semiconductor

Also Published As

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GB1522296A (en) 1978-08-23
JPS5310284A (en) 1978-01-30
IT1085840B (it) 1985-05-28
FR2358751B1 (fr) 1982-11-19
JPS6129556B2 (fr) 1986-07-07
US4173063A (en) 1979-11-06
DE2631873C2 (de) 1986-07-31
DE2631873A1 (de) 1978-01-19

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