FR2256583B1 - - Google Patents

Info

Publication number
FR2256583B1
FR2256583B1 FR7441890A FR7441890A FR2256583B1 FR 2256583 B1 FR2256583 B1 FR 2256583B1 FR 7441890 A FR7441890 A FR 7441890A FR 7441890 A FR7441890 A FR 7441890A FR 2256583 B1 FR2256583 B1 FR 2256583B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7441890A
Other versions
FR2256583A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of FR2256583A1 publication Critical patent/FR2256583A1/fr
Application granted granted Critical
Publication of FR2256583B1 publication Critical patent/FR2256583B1/fr
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4094—Bit-line management or control circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/01—Shaping pulses
    • H03K5/02—Shaping pulses by amplifying
    • H03K5/023—Shaping pulses by amplifying using field effect transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
FR7441890A 1973-12-26 1974-10-22 Expired FR2256583B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US428591A US3882326A (en) 1973-12-26 1973-12-26 Differential amplifier for sensing small signals

Publications (2)

Publication Number Publication Date
FR2256583A1 FR2256583A1 (fr) 1975-07-25
FR2256583B1 true FR2256583B1 (fr) 1979-06-08

Family

ID=23699571

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7441890A Expired FR2256583B1 (fr) 1973-12-26 1974-10-22

Country Status (4)

Country Link
US (1) US3882326A (fr)
JP (1) JPS5651436B2 (fr)
DE (1) DE2452604C2 (fr)
FR (1) FR2256583B1 (fr)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5539073B2 (fr) * 1974-12-25 1980-10-08
US3983413A (en) * 1975-05-02 1976-09-28 Fairchild Camera And Instrument Corporation Balanced differential capacitively decoupled charge sensor
US3992637A (en) * 1975-05-21 1976-11-16 Ibm Corporation Unclocked sense ampllifier
US3993917A (en) * 1975-05-29 1976-11-23 International Business Machines Corporation Parameter independent FET sense amplifier
US3969636A (en) * 1975-06-30 1976-07-13 General Electric Company Charge sensing circuit for charge transfer devices
US4021682A (en) * 1975-06-30 1977-05-03 Honeywell Information Systems, Inc. Charge detectors for CCD registers
US3983544A (en) * 1975-08-25 1976-09-28 International Business Machines Corporation Split memory array sharing same sensing and bit decode circuitry
JPS5259532A (en) * 1975-11-10 1977-05-17 Nippon Telegr & Teleph Corp <Ntt> Reader circuit of digital signals stored in charge-storing type memory circuit
US4096402A (en) * 1975-12-29 1978-06-20 Mostek Corporation MOSFET buffer for TTL logic input and method of operation
US4039861A (en) * 1976-02-09 1977-08-02 International Business Machines Corporation Cross-coupled charge transfer sense amplifier circuits
JPS52142442A (en) * 1976-05-21 1977-11-28 Nec Corp Memory circuit
US4028557A (en) * 1976-05-21 1977-06-07 Bell Telephone Laboratories, Incorporated Dynamic sense-refresh detector amplifier
JPS5938670B2 (ja) * 1976-10-15 1984-09-18 日本電気株式会社 差信号増巾回路
US4508980A (en) * 1976-11-11 1985-04-02 Signetics Corporation Sense and refresh amplifier circuit
US4162416A (en) * 1978-01-16 1979-07-24 Bell Telephone Laboratories, Incorporated Dynamic sense-refresh detector amplifier
US4239994A (en) * 1978-08-07 1980-12-16 Rca Corporation Asymmetrically precharged sense amplifier
JPS6039180B2 (ja) * 1978-11-28 1985-09-04 日本電気株式会社 センスアンプ
US4348596A (en) * 1979-12-27 1982-09-07 Rca Corporation Signal comparison circuit
US4602354A (en) * 1983-01-10 1986-07-22 Ncr Corporation X-and-OR memory array
US4636664A (en) * 1983-01-10 1987-01-13 Ncr Corporation Current sinking responsive MOS sense amplifier
US4644196A (en) * 1985-01-28 1987-02-17 Motorola, Inc. Tri-state differential amplifier
US4670675A (en) * 1986-02-07 1987-06-02 Advanced Micro Devices, Inc. High gain sense amplifier for small current differential
US4716320A (en) * 1986-06-20 1987-12-29 Texas Instruments Incorporated CMOS sense amplifier with isolated sensing nodes
US6291989B1 (en) * 1999-08-12 2001-09-18 Delphi Technologies, Inc. Differential magnetic position sensor with adaptive matching for detecting angular position of a toothed target wheel
US6492844B2 (en) * 2000-02-02 2002-12-10 Broadcom Corporation Single-ended sense amplifier with sample-and-hold reference
US8164362B2 (en) * 2000-02-02 2012-04-24 Broadcom Corporation Single-ended sense amplifier with sample-and-hold reference
US6529048B2 (en) * 2001-03-29 2003-03-04 Texas Instruments Incorporated Dynamic slew-rate booster for CMOS-opamps

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3317850A (en) * 1963-04-29 1967-05-02 Fairchild Camera Instr Co Temperature-stable differential amplifier using field-effect devices
US3473137A (en) * 1967-01-05 1969-10-14 Burroughs Corp Gain stabilized differential amplifier
US3387286A (en) * 1967-07-14 1968-06-04 Ibm Field-effect transistor memory
US3514765A (en) * 1969-05-23 1970-05-26 Shell Oil Co Sense amplifier comprising cross coupled mosfet's operating in a race mode for single device per bit mosfet memories
US3668429A (en) * 1970-09-22 1972-06-06 Ibm Sense amplifier latch for monolithic memories
US3676704A (en) * 1970-12-29 1972-07-11 Ibm Monolithic memory sense amplifier/bit driver
BE789500A (fr) * 1971-09-30 1973-03-29 Siemens Ag Memoire a semiconducteurs avec elements de memorisation a un seul transistor
US3760194A (en) * 1972-01-31 1973-09-18 Advanced Mamory Systems High speed sense amplifier
US3838295A (en) * 1973-02-05 1974-09-24 Lockheed Electronics Co Ratioless mos sense amplifier
US3806898A (en) * 1973-06-29 1974-04-23 Ibm Regeneration of dynamic monolithic memories

Also Published As

Publication number Publication date
DE2452604A1 (de) 1975-07-10
DE2452604C2 (de) 1982-07-29
US3882326A (en) 1975-05-06
JPS5098249A (fr) 1975-08-05
FR2256583A1 (fr) 1975-07-25
JPS5651436B2 (fr) 1981-12-05

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Legal Events

Date Code Title Description
ST Notification of lapse