FR2101023A1 - - Google Patents

Info

Publication number
FR2101023A1
FR2101023A1 FR7029261A FR7029261A FR2101023A1 FR 2101023 A1 FR2101023 A1 FR 2101023A1 FR 7029261 A FR7029261 A FR 7029261A FR 7029261 A FR7029261 A FR 7029261A FR 2101023 A1 FR2101023 A1 FR 2101023A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7029261A
Other languages
French (fr)
Other versions
FR2101023B1 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Priority to FR7029261A priority Critical patent/FR2101023B1/fr
Priority to NL7110738A priority patent/NL7110738A/xx
Priority to GB3717771A priority patent/GB1364275A/en
Priority to DE19712139528 priority patent/DE2139528C3/en
Publication of FR2101023A1 publication Critical patent/FR2101023A1/fr
Application granted granted Critical
Publication of FR2101023B1 publication Critical patent/FR2101023B1/fr
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/112Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
    • H01L31/113Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor
    • H01L31/1136Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor the device being a metal-insulator-semiconductor field-effect transistor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14643Photodiode arrays; MOS imagers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Ceramic Engineering (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
FR7029261A 1970-08-07 1970-08-07 Expired FR2101023B1 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR7029261A FR2101023B1 (en) 1970-08-07 1970-08-07
NL7110738A NL7110738A (en) 1970-08-07 1971-08-04
GB3717771A GB1364275A (en) 1970-08-07 1971-08-06 Mosaic of mos type semiconductor elements
DE19712139528 DE2139528C3 (en) 1970-08-07 1971-08-06 Photo-MOS arrangement and matrix formed from it

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7029261A FR2101023B1 (en) 1970-08-07 1970-08-07

Publications (2)

Publication Number Publication Date
FR2101023A1 true FR2101023A1 (en) 1972-03-31
FR2101023B1 FR2101023B1 (en) 1973-11-23

Family

ID=9059985

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7029261A Expired FR2101023B1 (en) 1970-08-07 1970-08-07

Country Status (4)

Country Link
DE (1) DE2139528C3 (en)
FR (1) FR2101023B1 (en)
GB (1) GB1364275A (en)
NL (1) NL7110738A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1106477A (en) * 1972-07-10 1981-08-04 Carlo H. Sequin Overflow channel for charge transfer imaging devices

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3391282A (en) * 1965-02-19 1968-07-02 Fairchild Camera Instr Co Variable length photodiode using an inversion plate
US3459944A (en) * 1966-01-04 1969-08-05 Ibm Photosensitive insulated gate field effect transistor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3391282A (en) * 1965-02-19 1968-07-02 Fairchild Camera Instr Co Variable length photodiode using an inversion plate
US3459944A (en) * 1966-01-04 1969-08-05 Ibm Photosensitive insulated gate field effect transistor

Non-Patent Citations (7)

* Cited by examiner, † Cited by third party
Title
(REVUE FRANCAISE *REVUE TECHNIQUE THOMSON-CSF VOL.1,MARS 1969,PAGES 19-39"INFLUENCE DE L'ILLUMINATION SUR LES SYSTEMES METAL-ISOLANT SEMICONDUCTEUR"J.OLIVIER *
*REVUE AMERICAINE IBM TECHNICAL DISCLOSURE BULLETIN VOL.9,DEC.1967,PAGE 931"INSULATED ELECTRODE OF ADJUSTABLE POTENTIAL") *
L'ILLUMINATION SUR LES SYSTEMES METAL-ISOLANT SEMICONDUCTEUR"J.OLIVIER *
POTENTIAL") *
REVUE AMERICAINE IBM *
REVUE FRANCAISE REVUE TECHNIQUE THOMSON-CSF VOL.1,MARS 1969,PAGES 19-39"INFLUENCE DE *
TECHNICAL DISCLOSURE BULLETIN VOL.9,DEC.1967,PAGE 931"INSULATED ELECTRODE OF ADJUSTABLE *

Also Published As

Publication number Publication date
DE2139528A1 (en) 1972-03-09
GB1364275A (en) 1974-08-21
DE2139528B2 (en) 1980-03-27
NL7110738A (en) 1972-02-09
FR2101023B1 (en) 1973-11-23
DE2139528C3 (en) 1980-11-20

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Legal Events

Date Code Title Description
ST Notification of lapse