FR1322886A - Unipolar-bipolar semiconductor device - Google Patents

Unipolar-bipolar semiconductor device

Info

Publication number
FR1322886A
FR1322886A FR888197A FR888197A FR1322886A FR 1322886 A FR1322886 A FR 1322886A FR 888197 A FR888197 A FR 888197A FR 888197 A FR888197 A FR 888197A FR 1322886 A FR1322886 A FR 1322886A
Authority
FR
France
Prior art keywords
unipolar
semiconductor device
bipolar semiconductor
bipolar
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR888197A
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CBS Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US89497A external-priority patent/US3173101A/en
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Priority to FR888197A priority Critical patent/FR1322886A/en
Application granted granted Critical
Publication of FR1322886A publication Critical patent/FR1322886A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/34DC amplifiers in which all stages are DC-coupled
    • H03F3/343DC amplifiers in which all stages are DC-coupled with semiconductor devices only
    • H03F3/345DC amplifiers in which all stages are DC-coupled with semiconductor devices only with field-effect devices
    • H03F3/3455DC amplifiers in which all stages are DC-coupled with semiconductor devices only with field-effect devices with junction-FET's
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0623Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
FR888197A 1961-02-15 1962-02-15 Unipolar-bipolar semiconductor device Expired FR1322886A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR888197A FR1322886A (en) 1961-02-15 1962-02-15 Unipolar-bipolar semiconductor device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US89497A US3173101A (en) 1961-02-15 1961-02-15 Monolithic two stage unipolar-bipolar semiconductor amplifier device
FR888197A FR1322886A (en) 1961-02-15 1962-02-15 Unipolar-bipolar semiconductor device

Publications (1)

Publication Number Publication Date
FR1322886A true FR1322886A (en) 1963-04-05

Family

ID=26194399

Family Applications (1)

Application Number Title Priority Date Filing Date
FR888197A Expired FR1322886A (en) 1961-02-15 1962-02-15 Unipolar-bipolar semiconductor device

Country Status (1)

Country Link
FR (1) FR1322886A (en)

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