FR1231411A - Perfectionnements apportés à la fabrication de transistors - Google Patents

Perfectionnements apportés à la fabrication de transistors

Info

Publication number
FR1231411A
FR1231411A FR801235A FR801235A FR1231411A FR 1231411 A FR1231411 A FR 1231411A FR 801235 A FR801235 A FR 801235A FR 801235 A FR801235 A FR 801235A FR 1231411 A FR1231411 A FR 1231411A
Authority
FR
France
Prior art keywords
transistors
manufacture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR801235A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Edison Swan Ltd
Original Assignee
Siemens Edison Swan Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Edison Swan Ltd filed Critical Siemens Edison Swan Ltd
Application granted granted Critical
Publication of FR1231411A publication Critical patent/FR1231411A/fr
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F1/00Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
    • H01F1/01Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials
    • H01F1/03Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity
    • H01F1/0302Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity characterised by unspecified or heterogeneous hardness or specially adapted for magnetic hardness transitions
    • H01F1/0311Compounds
    • H01F1/0313Oxidic compounds
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F1/00Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
    • H01F1/01Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials
    • H01F1/40Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials of magnetic semiconductor materials, e.g. CdCr2S4
    • H01F1/401Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials of magnetic semiconductor materials, e.g. CdCr2S4 diluted
    • H01F1/405Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials of magnetic semiconductor materials, e.g. CdCr2S4 diluted of IV type, e.g. Ge1-xMnx
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Thyristors (AREA)
FR801235A 1958-07-28 1959-07-27 Perfectionnements apportés à la fabrication de transistors Expired FR1231411A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB2424258A GB907103A (en) 1958-07-28 1958-07-28 Improvements relating to the production of transistors

Publications (1)

Publication Number Publication Date
FR1231411A true FR1231411A (fr) 1960-09-29

Family

ID=10208666

Family Applications (1)

Application Number Title Priority Date Filing Date
FR801235A Expired FR1231411A (fr) 1958-07-28 1959-07-27 Perfectionnements apportés à la fabrication de transistors

Country Status (2)

Country Link
FR (1) FR1231411A (fr)
GB (1) GB907103A (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1236661B (de) * 1963-09-25 1967-03-16 Siemens Ag Halbleiteranordnung mit einem durch Einlegieren einer Metallpille erzeugten pn-UEbergang

Also Published As

Publication number Publication date
GB907103A (en) 1962-10-03

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