EP1703564A3 - Image sensor with embedded photodiode region and fabrication method thereof - Google Patents

Image sensor with embedded photodiode region and fabrication method thereof Download PDF

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Publication number
EP1703564A3
EP1703564A3 EP05256504A EP05256504A EP1703564A3 EP 1703564 A3 EP1703564 A3 EP 1703564A3 EP 05256504 A EP05256504 A EP 05256504A EP 05256504 A EP05256504 A EP 05256504A EP 1703564 A3 EP1703564 A3 EP 1703564A3
Authority
EP
European Patent Office
Prior art keywords
transistor
image sensor
photodiode
photodiode region
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP05256504A
Other languages
German (de)
French (fr)
Other versions
EP1703564A2 (en
EP1703564B1 (en
Inventor
Tadao Fujitsu Limited Inoue
Katsuyoshi Fujitsu Limited Yamamoto
Narumi Fujitsu Limited Okhawa
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Fujitsu Semiconductor Ltd
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Fujitsu Semiconductor Ltd
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Filing date
Publication date
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Publication of EP1703564A2 publication Critical patent/EP1703564A2/en
Publication of EP1703564A3 publication Critical patent/EP1703564A3/en
Application granted granted Critical
Publication of EP1703564B1 publication Critical patent/EP1703564B1/en
Not-in-force legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14641—Electronic components shared by two or more pixel-elements, e.g. one amplifier shared by two pixel elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H01L27/14623—Optical shielding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14636—Interconnect structures

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

An image sensor in which a plurality of pixels (PX1, PX2) having at least a photodiode (PD), a reset transistor (RST), and source follower transistor (SF) are formed, wherein each pixel comprises an electrical-charge transfer gate transistor (TG), between the photodiode and reset transistor, and a floating diffusion region (FD) constituting a node connecting the reset transistor and transfer gate transistor which is connected to the gate of the source follower transistor (SF). Further, a photodiode region (PD) is embedded below a well region in which the reset transistor (RST) and source follower transistor (SF) of each pixel are formed. However, no photodiode region is formed below at least part of the floating diffusion region.
EP05256504A 2005-03-17 2005-10-20 Image sensor with embedded photodiode region Not-in-force EP1703564B1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005077237A JP4224036B2 (en) 2005-03-17 2005-03-17 Image sensor with embedded photodiode region and method of manufacturing the same

Publications (3)

Publication Number Publication Date
EP1703564A2 EP1703564A2 (en) 2006-09-20
EP1703564A3 true EP1703564A3 (en) 2009-06-10
EP1703564B1 EP1703564B1 (en) 2011-06-22

Family

ID=36570720

Family Applications (1)

Application Number Title Priority Date Filing Date
EP05256504A Not-in-force EP1703564B1 (en) 2005-03-17 2005-10-20 Image sensor with embedded photodiode region

Country Status (5)

Country Link
US (1) US7417273B2 (en)
EP (1) EP1703564B1 (en)
JP (1) JP4224036B2 (en)
KR (1) KR100758321B1 (en)
CN (1) CN1835245B (en)

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Also Published As

Publication number Publication date
EP1703564A2 (en) 2006-09-20
JP4224036B2 (en) 2009-02-12
KR20060101187A (en) 2006-09-22
CN1835245A (en) 2006-09-20
KR100758321B1 (en) 2007-09-13
US7417273B2 (en) 2008-08-26
CN1835245B (en) 2010-10-13
US20060208285A1 (en) 2006-09-21
EP1703564B1 (en) 2011-06-22
JP2006261411A (en) 2006-09-28

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