DE69913366D1 - Lese/schreibe-puffern für ein komplettes verdecken des auffrischen eines halbleiterspeichers und verfahren zum betreiben derselben - Google Patents

Lese/schreibe-puffern für ein komplettes verdecken des auffrischen eines halbleiterspeichers und verfahren zum betreiben derselben

Info

Publication number
DE69913366D1
DE69913366D1 DE69913366T DE69913366T DE69913366D1 DE 69913366 D1 DE69913366 D1 DE 69913366D1 DE 69913366 T DE69913366 T DE 69913366T DE 69913366 T DE69913366 T DE 69913366T DE 69913366 D1 DE69913366 D1 DE 69913366D1
Authority
DE
Germany
Prior art keywords
finishing
semi
read
operating
semiconductor memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69913366T
Other languages
English (en)
Other versions
DE69913366T2 (de
Inventor
Wingyu Leung
Fu-Chieh Hsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Peraso Inc
Original Assignee
Monolithic System Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/405,607 external-priority patent/US6415353B1/en
Application filed by Monolithic System Technology Inc filed Critical Monolithic System Technology Inc
Publication of DE69913366D1 publication Critical patent/DE69913366D1/de
Application granted granted Critical
Publication of DE69913366T2 publication Critical patent/DE69913366T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G11C11/40618—Refresh operations over multiple banks or interleaving
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02—Addressing or allocation; Relocation
    • G06F12/08—Addressing or allocation; Relocation in hierarchically structured memory systems, e.g. virtual memory systems
    • G06F12/0802—Addressing of a memory level in which the access to the desired data or data block requires associative addressing means, e.g. caches
    • G06F12/0893—Caches characterised by their organisation or structure
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/005—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor comprising combined but independently operative RAM-ROM, RAM-PROM, RAM-EPROM cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/30—Providing cache or TLB in specific location of a processing system
    • G06F2212/304—In main memory subsystem
    • G06F2212/3042—In main memory subsystem being part of a memory device, e.g. cache DRAM

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
  • Memory System Of A Hierarchy Structure (AREA)
DE69913366T 1998-10-01 1999-10-01 Lese/schreibe-puffern für ein komplettes verdecken des auffrischen eines halbleiterspeichers und verfahren zum betreiben derselben Expired - Lifetime DE69913366T2 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US405607 1989-09-11
US165228 1993-12-10
US09/165,228 US5999474A (en) 1998-10-01 1998-10-01 Method and apparatus for complete hiding of the refresh of a semiconductor memory
US09/405,607 US6415353B1 (en) 1998-10-01 1999-09-24 Read/write buffers for complete hiding of the refresh of a semiconductor memory and method of operating same
PCT/US1999/022894 WO2000019445A1 (en) 1998-10-01 1999-10-01 Read/write buffers for complete hiding of the refresh of a semiconductor memory and method of operating same

Publications (2)

Publication Number Publication Date
DE69913366D1 true DE69913366D1 (de) 2004-01-15
DE69913366T2 DE69913366T2 (de) 2004-05-27

Family

ID=22598011

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69913366T Expired - Lifetime DE69913366T2 (de) 1998-10-01 1999-10-01 Lese/schreibe-puffern für ein komplettes verdecken des auffrischen eines halbleiterspeichers und verfahren zum betreiben derselben

Country Status (6)

Country Link
US (2) US5999474A (de)
EP (1) EP1119862B1 (de)
JP (1) JP4025509B2 (de)
DE (1) DE69913366T2 (de)
TW (1) TW476960B (de)
WO (1) WO2000019445A1 (de)

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EP1119862A1 (de) 2001-08-01
US5999474A (en) 1999-12-07
WO2000019445A1 (en) 2000-04-06
DE69913366T2 (de) 2004-05-27
TW476960B (en) 2002-02-21
EP1119862B1 (de) 2003-12-03
WO2000019445B1 (en) 2000-05-25
US6449685B1 (en) 2002-09-10
JP2002526882A (ja) 2002-08-20
US20020056022A1 (en) 2002-05-09

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