DE69840523D1 - Verbesserter schutz fur aktiv-matrix-anzeigen vor elektrostatische entladungen sowie testschema - Google Patents
Verbesserter schutz fur aktiv-matrix-anzeigen vor elektrostatische entladungen sowie testschemaInfo
- Publication number
- DE69840523D1 DE69840523D1 DE69840523T DE69840523T DE69840523D1 DE 69840523 D1 DE69840523 D1 DE 69840523D1 DE 69840523 T DE69840523 T DE 69840523T DE 69840523 T DE69840523 T DE 69840523T DE 69840523 D1 DE69840523 D1 DE 69840523D1
- Authority
- DE
- Germany
- Prior art keywords
- teschema
- active
- improved protection
- electrostatic discharges
- matrix indicators
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000011159 matrix material Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/782—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, each consisting of a single circuit element
- H01L21/786—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, each consisting of a single circuit element the substrate being other than a semiconductor body, e.g. insulating body
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/1306—Details
- G02F1/1309—Repairing; Testing
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136204—Arrangements to prevent high voltage or static electricity failures
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Optics & Photonics (AREA)
- Liquid Crystal (AREA)
- Mathematical Physics (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US78233597A | 1997-01-13 | 1997-01-13 | |
PCT/US1998/000508 WO1998031050A1 (en) | 1997-01-13 | 1998-01-13 | Improved active matrix esd protection and testing scheme |
Publications (1)
Publication Number | Publication Date |
---|---|
DE69840523D1 true DE69840523D1 (de) | 2009-03-19 |
Family
ID=25125723
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69840523T Expired - Fee Related DE69840523D1 (de) | 1997-01-13 | 1998-01-13 | Verbesserter schutz fur aktiv-matrix-anzeigen vor elektrostatische entladungen sowie testschema |
Country Status (7)
Country | Link |
---|---|
EP (1) | EP1008177B1 (de) |
JP (1) | JP4294096B2 (de) |
KR (1) | KR100363307B1 (de) |
CN (1) | CN1129025C (de) |
AU (1) | AU6021198A (de) |
DE (1) | DE69840523D1 (de) |
WO (1) | WO1998031050A1 (de) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6246074B1 (en) | 1998-09-30 | 2001-06-12 | Lg.Philips Lcd Co., Ltd. | Thin film transistor substrate with testing circuit |
KR100443539B1 (ko) | 2002-04-16 | 2004-08-09 | 엘지.필립스 엘시디 주식회사 | 액정표시장치용 어레이기판과 그 제조방법 |
DE10227332A1 (de) * | 2002-06-19 | 2004-01-15 | Akt Electron Beam Technology Gmbh | Ansteuervorrichtung mit verbesserten Testeneigenschaften |
KR100870013B1 (ko) * | 2002-08-27 | 2008-11-21 | 삼성전자주식회사 | 박막 트랜지스터 어레이 기판 및 그 제조 방법 |
KR100900543B1 (ko) | 2002-11-14 | 2009-06-02 | 삼성전자주식회사 | 박막 트랜지스터 기판의 다결정 규소 박막 트랜지스터 및그의 형성 방법 |
KR100635061B1 (ko) * | 2004-03-09 | 2006-10-17 | 삼성에스디아이 주식회사 | 평판 표시 장치 및 그의 제조 방법 |
KR101051008B1 (ko) * | 2004-08-24 | 2011-07-21 | 삼성전자주식회사 | 어레이 기판의 제조 방법과, 이에 의해 제조된 어레이 기판 |
JP3982533B2 (ja) | 2004-11-04 | 2007-09-26 | ソニー株式会社 | 撮像装置および撮影補助マーク利用制御方法 |
US7477333B2 (en) | 2005-08-30 | 2009-01-13 | Chunghwa Picture Tubes, Ltd. | Liquid crystal display panel with electrostatic discharge protection |
KR101251351B1 (ko) | 2005-12-28 | 2013-04-05 | 삼성디스플레이 주식회사 | 박막트랜지스터 기판, 이의 제조방법 및 이를 갖는표시패널 |
US20080024427A1 (en) * | 2006-07-26 | 2008-01-31 | Prime View International Co., Ltd. | Electronic ink display panel |
CN101661698B (zh) * | 2008-08-26 | 2014-07-16 | 群创光电股份有限公司 | 显示影像系统 |
KR101082174B1 (ko) | 2009-11-27 | 2011-11-09 | 삼성모바일디스플레이주식회사 | 유기전계발광 표시 장치 및 그의 제조 방법 |
CN103163670B (zh) * | 2011-12-19 | 2016-03-02 | 上海中航光电子有限公司 | 一种液晶显示装置的检测开关 |
CN102566130B (zh) * | 2012-03-02 | 2014-06-18 | 深圳市华星光电技术有限公司 | 液晶面板制造方法及装置 |
KR102330861B1 (ko) * | 2015-11-17 | 2021-11-24 | 엘지디스플레이 주식회사 | 정전기 방지 회로 및 이를 적용한 백플레인 기판 및 이의 제조 방법 |
CN105372857B (zh) * | 2015-12-16 | 2018-01-23 | 上海天马微电子有限公司 | 一种玻璃基板、液晶显示面板及液晶显示装置 |
CN112068375B (zh) * | 2020-09-23 | 2022-10-11 | 北海惠科光电技术有限公司 | 母基板和显示面板 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4820222A (en) * | 1986-12-31 | 1989-04-11 | Alphasil, Inc. | Method of manufacturing flat panel backplanes including improved testing and yields thereof and displays made thereby |
JPH0711640B2 (ja) * | 1988-07-07 | 1995-02-08 | 松下電器産業株式会社 | アクティブマトリックス基板 |
JP2642462B2 (ja) * | 1988-12-12 | 1997-08-20 | シャープ株式会社 | マトリクス形表示装置用基板および検査修正方法 |
JP2610328B2 (ja) * | 1988-12-21 | 1997-05-14 | 株式会社東芝 | 液晶表示素子の製造方法 |
US5019002A (en) * | 1989-07-12 | 1991-05-28 | Honeywell, Inc. | Method of manufacturing flat panel backplanes including electrostatic discharge prevention and displays made thereby |
JP2764139B2 (ja) * | 1989-10-20 | 1998-06-11 | ホシデン・フィリップス・ディスプレイ株式会社 | アクティブマトリックス液晶表示素子 |
JP2579427B2 (ja) * | 1993-11-10 | 1997-02-05 | インターナショナル・ビジネス・マシーンズ・コーポレイション | 表示装置及び表示装置の駆動方法 |
JP3315834B2 (ja) * | 1995-05-31 | 2002-08-19 | 富士通株式会社 | 薄膜トランジスタマトリクス装置及びその製造方法 |
US5668032A (en) * | 1995-07-31 | 1997-09-16 | Holmberg; Scott H. | Active matrix ESD protection and testing scheme |
-
1998
- 1998-01-13 DE DE69840523T patent/DE69840523D1/de not_active Expired - Fee Related
- 1998-01-13 CN CN98801813A patent/CN1129025C/zh not_active Expired - Lifetime
- 1998-01-13 AU AU60211/98A patent/AU6021198A/en not_active Abandoned
- 1998-01-13 KR KR1019997006322A patent/KR100363307B1/ko not_active IP Right Cessation
- 1998-01-13 EP EP98903440A patent/EP1008177B1/de not_active Expired - Lifetime
- 1998-01-13 WO PCT/US1998/000508 patent/WO1998031050A1/en active IP Right Grant
- 1998-01-13 JP JP53118998A patent/JP4294096B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP1008177A4 (de) | 2000-12-27 |
CN1243603A (zh) | 2000-02-02 |
AU6021198A (en) | 1998-08-03 |
KR20000070100A (ko) | 2000-11-25 |
KR100363307B1 (ko) | 2002-11-30 |
JP4294096B2 (ja) | 2009-07-08 |
JP2001516465A (ja) | 2001-09-25 |
EP1008177B1 (de) | 2009-01-28 |
CN1129025C (zh) | 2003-11-26 |
WO1998031050A1 (en) | 1998-07-16 |
EP1008177A1 (de) | 2000-06-14 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |