DE68913033D1 - Elementare quecksilberquelle für metall-organische chemische abscheidung aus der gasphase. - Google Patents

Elementare quecksilberquelle für metall-organische chemische abscheidung aus der gasphase.

Info

Publication number
DE68913033D1
DE68913033D1 DE89908643T DE68913033T DE68913033D1 DE 68913033 D1 DE68913033 D1 DE 68913033D1 DE 89908643 T DE89908643 T DE 89908643T DE 68913033 T DE68913033 T DE 68913033T DE 68913033 D1 DE68913033 D1 DE 68913033D1
Authority
DE
Germany
Prior art keywords
metal
gas phase
organic chemical
chemical deposition
mercury source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE89908643T
Other languages
English (en)
Other versions
DE68913033T2 (de
Inventor
William Ahlgren
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Raytheon Co
Original Assignee
Santa Barbara Research Center
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Santa Barbara Research Center filed Critical Santa Barbara Research Center
Application granted granted Critical
Publication of DE68913033D1 publication Critical patent/DE68913033D1/de
Publication of DE68913033T2 publication Critical patent/DE68913033T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4485—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation without using carrier gas in contact with the source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/305—Sulfides, selenides, or tellurides
    • C23C16/306—AII BVI compounds, where A is Zn, Cd or Hg and B is S, Se or Te
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
DE68913033T 1988-08-22 1989-07-17 Elementare quecksilberquelle für metall-organische chemische abscheidung aus der gasphase. Expired - Fee Related DE68913033T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/234,722 US4901670A (en) 1988-08-22 1988-08-22 Elemental mercury source for metal-organic chemical vapor deposition
PCT/US1989/003046 WO1990002217A1 (en) 1988-08-22 1989-07-17 Elemental mercury source for metal-organic chemical vapor deposition

Publications (2)

Publication Number Publication Date
DE68913033D1 true DE68913033D1 (de) 1994-03-24
DE68913033T2 DE68913033T2 (de) 1994-09-01

Family

ID=22882532

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68913033T Expired - Fee Related DE68913033T2 (de) 1988-08-22 1989-07-17 Elementare quecksilberquelle für metall-organische chemische abscheidung aus der gasphase.

Country Status (6)

Country Link
US (1) US4901670A (de)
EP (1) EP0386190B1 (de)
JP (1) JPH0663094B2 (de)
DE (1) DE68913033T2 (de)
IL (1) IL91155A (de)
WO (1) WO1990002217A1 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0677140A (ja) * 1992-05-14 1994-03-18 Mitsubishi Electric Corp 気相結晶成長装置
US5960158A (en) * 1997-07-11 1999-09-28 Ag Associates Apparatus and method for filtering light in a thermal processing chamber
SE9801190D0 (sv) * 1998-04-06 1998-04-06 Abb Research Ltd A method and a device for epitaxial growth of objects by Chemical Vapour Deposition
US5930456A (en) * 1998-05-14 1999-07-27 Ag Associates Heating device for semiconductor wafers
US5970214A (en) * 1998-05-14 1999-10-19 Ag Associates Heating device for semiconductor wafers
US6210484B1 (en) 1998-09-09 2001-04-03 Steag Rtp Systems, Inc. Heating device containing a multi-lamp cone for heating semiconductor wafers
US6771895B2 (en) 1999-01-06 2004-08-03 Mattson Technology, Inc. Heating device for heating semiconductor wafers in thermal processing chambers
DE102008037160A1 (de) 2008-08-08 2010-02-11 Krones Ag Versorgungsvorrichtung
CN115386960B (zh) * 2022-09-19 2023-09-05 中国电子科技集团公司第四十八研究所 一种汞源炉及其补充汞液的方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3594242A (en) * 1966-01-03 1971-07-20 Monsanto Co Method for production of epitaxial films
US3471324A (en) * 1966-12-23 1969-10-07 Texas Instruments Inc Epitaxial gallium arsenide
CA1071068A (en) * 1975-03-19 1980-02-05 Guy-Michel Jacob Method of manufacturing single crystals by growth from the vapour phase
JPS5272399A (en) * 1975-12-13 1977-06-16 Fujitsu Ltd Method and apparatus for growth of single crystals of al2o3 from gas p hase
DE3168017D1 (en) * 1980-05-27 1985-02-14 Secr Defence Brit Manufacture of cadmium mercury telluride
JPS5768019A (en) * 1980-10-15 1982-04-26 Sumitomo Electric Ind Ltd Gas phase growing method
JPS57149725A (en) * 1981-03-12 1982-09-16 Nippon Telegr & Teleph Corp <Ntt> Method of epitaxial growth and device therefore
US4439267A (en) * 1982-09-29 1984-03-27 The United States Of America As Represented By The Secretary Of The Army Vapor-phase method for growing mercury cadmium telluride
US4488507A (en) * 1982-09-30 1984-12-18 Jackson Jr David A Susceptors for organometallic vapor-phase epitaxial (OMVPE) method
JPS59128299A (ja) * 1983-01-10 1984-07-24 Nec Corp 燐化アルミニウム・インジウム単結晶の製造方法
GB8324531D0 (en) * 1983-09-13 1983-10-12 Secr Defence Cadmium mercury telluride
US4801557A (en) * 1987-06-23 1989-01-31 Northwestern University Vapor-phase epitaxy of indium phosphide and other compounds using flow-rate modulation
JP3059570B2 (ja) * 1992-02-27 2000-07-04 古河電気工業株式会社 超電導線及びその製造方法

Also Published As

Publication number Publication date
WO1990002217A1 (en) 1990-03-08
JPH0663094B2 (ja) 1994-08-17
IL91155A0 (en) 1990-03-19
EP0386190B1 (de) 1994-02-09
EP0386190A1 (de) 1990-09-12
US4901670A (en) 1990-02-20
DE68913033T2 (de) 1994-09-01
IL91155A (en) 1994-07-31
JPH03502714A (ja) 1991-06-20

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee