DE60333199D1 - Phasenänderungsspeicher mit Überspannungsschutz und Schutzverfahren für Phasenänderungsspeicher mit Überspannungsschutz - Google Patents

Phasenänderungsspeicher mit Überspannungsschutz und Schutzverfahren für Phasenänderungsspeicher mit Überspannungsschutz

Info

Publication number
DE60333199D1
DE60333199D1 DE60333199T DE60333199T DE60333199D1 DE 60333199 D1 DE60333199 D1 DE 60333199D1 DE 60333199 T DE60333199 T DE 60333199T DE 60333199 T DE60333199 T DE 60333199T DE 60333199 D1 DE60333199 D1 DE 60333199D1
Authority
DE
Germany
Prior art keywords
phase change
change memory
overvoltage protection
protection
overvoltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60333199T
Other languages
English (en)
Inventor
Ferdinando Bedeschi
Claudio Resta
Guido Torelli
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Universita degli Studi di Pavia
STMicroelectronics SRL
Original Assignee
Universita degli Studi di Pavia
STMicroelectronics SRL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Universita degli Studi di Pavia, STMicroelectronics SRL filed Critical Universita degli Studi di Pavia
Application granted granted Critical
Publication of DE60333199D1 publication Critical patent/DE60333199D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0023—Address circuits or decoders
    • G11C13/0026—Bit-line or column circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/004—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0059—Security or protection circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/12—Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/004—Reading or sensing circuits or methods
    • G11C2013/0054—Read is performed on a reference element, e.g. cell, and the reference sensed value is used to compare the sensed value of the selected cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/79—Array wherein the access device being a transistor

Landscapes

  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Security & Cryptography (AREA)
  • Static Random-Access Memory (AREA)
  • Semiconductor Memories (AREA)
DE60333199T 2003-11-12 2003-11-12 Phasenänderungsspeicher mit Überspannungsschutz und Schutzverfahren für Phasenänderungsspeicher mit Überspannungsschutz Expired - Lifetime DE60333199D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP03425728A EP1538632B1 (de) 2003-11-12 2003-11-12 Phasenänderungsspeicher mit Überspannungsschutz und Schutzverfahren für Phasenänderungsspeicher mit Überspannungsschutz

Publications (1)

Publication Number Publication Date
DE60333199D1 true DE60333199D1 (de) 2010-08-12

Family

ID=34443153

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60333199T Expired - Lifetime DE60333199D1 (de) 2003-11-12 2003-11-12 Phasenänderungsspeicher mit Überspannungsschutz und Schutzverfahren für Phasenänderungsspeicher mit Überspannungsschutz

Country Status (3)

Country Link
US (1) US7068534B2 (de)
EP (1) EP1538632B1 (de)
DE (1) DE60333199D1 (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7145824B2 (en) 2005-03-22 2006-12-05 Spansion Llc Temperature compensation of thin film diode voltage threshold in memory sensing circuit
US20060279979A1 (en) * 2005-06-13 2006-12-14 Tyler Lowrey Method of reading phase-change memory elements
US7372725B2 (en) * 2005-08-15 2008-05-13 Infineon Technologies Ag Integrated circuit having resistive memory
US7599209B2 (en) * 2005-12-23 2009-10-06 Infineon Technologies Ag Memory circuit including a resistive memory element and method for operating such a memory circuit
WO2007125590A1 (ja) * 2006-04-28 2007-11-08 Spansion Llc 半導体装置およびその制御方法
US20080043513A1 (en) * 2006-08-21 2008-02-21 Heinz Hoenigschmid Intergrated circuit having memory with resistive memory cells
DE102006039164A1 (de) * 2006-08-21 2008-02-28 Qimonda Ag Integrierte Schaltung mit einer programmierbaren Widerstandszelle
US7755935B2 (en) * 2007-07-26 2010-07-13 International Business Machines Corporation Block erase for phase change memory
US8339835B2 (en) * 2009-06-03 2012-12-25 Panasonic Corporation Nonvolatile memory element and semiconductor memory device including nonvolatile memory element
WO2011070599A1 (en) 2009-12-10 2011-06-16 Ferdinando Bedeschi Apparatus and method for reading a phase-change memory cell
US8462577B2 (en) 2011-03-18 2013-06-11 Intel Corporation Single transistor driver for address lines in a phase change memory and switch (PCMS) array
JP5858350B2 (ja) 2011-09-14 2016-02-10 インテル・コーポレーション 装置、方法およびシステム
CN103295626B (zh) * 2012-02-28 2016-06-01 北京时代全芯科技有限公司 一种用于相变存储器的高精度数据读取电路
CN103794252B (zh) * 2012-10-29 2018-01-09 硅存储技术公司 用于读出放大器的低电压电流参考产生器
JP2015061043A (ja) * 2013-09-20 2015-03-30 株式会社東芝 抵抗変化メモリ
US9257175B2 (en) * 2013-09-26 2016-02-09 Intel Corporation Refresh of data stored in a cross-point non-volatile memory
ITUB20153221A1 (it) 2015-08-25 2017-02-25 St Microelectronics Srl Circuito e metodo di polarizzazione di celle di memoria non volatile
CN109473136B (zh) * 2018-12-24 2023-08-29 北京时代全芯存储技术股份有限公司 记忆体驱动装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6314014B1 (en) * 1999-12-16 2001-11-06 Ovonyx, Inc. Programmable resistance memory arrays with reference cells
US6590807B2 (en) * 2001-08-02 2003-07-08 Intel Corporation Method for reading a structural phase-change memory
US6456524B1 (en) * 2001-10-31 2002-09-24 Hewlett-Packard Company Hybrid resistive cross point memory cell arrays and methods of making the same
EP1326258B1 (de) * 2001-12-27 2016-03-23 STMicroelectronics Srl Nichtflüchtiger Phasenänderungsspeicher mit nur einer Speisespannung, Kaskoden-Spaltenauswahl und gleichzeitigen Wortlese- und -schreiboperationen
US6678189B2 (en) * 2002-02-25 2004-01-13 Hewlett-Packard Development Company, L.P. Method and system for performing equipotential sensing across a memory array to eliminate leakage currents

Also Published As

Publication number Publication date
US7068534B2 (en) 2006-06-27
US20050180188A1 (en) 2005-08-18
EP1538632B1 (de) 2010-06-30
EP1538632A1 (de) 2005-06-08

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