DE602006002900D1 - Wässrige Dispersion zum chemisch-mechanischen Polieren, Kit zu deren Herstellung und chemisch-mechanisches Polierverfahren - Google Patents
Wässrige Dispersion zum chemisch-mechanischen Polieren, Kit zu deren Herstellung und chemisch-mechanisches PolierverfahrenInfo
- Publication number
- DE602006002900D1 DE602006002900D1 DE602006002900T DE602006002900T DE602006002900D1 DE 602006002900 D1 DE602006002900 D1 DE 602006002900D1 DE 602006002900 T DE602006002900 T DE 602006002900T DE 602006002900 T DE602006002900 T DE 602006002900T DE 602006002900 D1 DE602006002900 D1 DE 602006002900D1
- Authority
- DE
- Germany
- Prior art keywords
- mechanical polishing
- chemical
- kit
- preparation
- aqueous dispersion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000006185 dispersion Substances 0.000 title 1
- 238000005498 polishing Methods 0.000 title 1
- 238000007517 polishing process Methods 0.000 title 1
- 239000000126 substance Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
-
- A—HUMAN NECESSITIES
- A47—FURNITURE; DOMESTIC ARTICLES OR APPLIANCES; COFFEE MILLS; SPICE MILLS; SUCTION CLEANERS IN GENERAL
- A47K—SANITARY EQUIPMENT NOT OTHERWISE PROVIDED FOR; TOILET ACCESSORIES
- A47K1/00—Wash-stands; Appurtenances therefor
- A47K1/08—Accessories for toilet tables, e.g. glass plates, supports therefor
- A47K1/09—Holders for drinking glasses, tooth brushes, hair brushes, or the like
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- A—HUMAN NECESSITIES
- A47—FURNITURE; DOMESTIC ARTICLES OR APPLIANCES; COFFEE MILLS; SPICE MILLS; SUCTION CLEANERS IN GENERAL
- A47K—SANITARY EQUIPMENT NOT OTHERWISE PROVIDED FOR; TOILET ACCESSORIES
- A47K2201/00—Details of connections of bathroom accessories, e.g. fixing soap or towel holder to a wall
- A47K2201/02—Connections to a wall mounted support
Landscapes
- Engineering & Computer Science (AREA)
- Health & Medical Sciences (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Organic Chemistry (AREA)
- Dentistry (AREA)
- Public Health (AREA)
- General Health & Medical Sciences (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005064754 | 2005-03-09 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE602006002900D1 true DE602006002900D1 (de) | 2008-11-13 |
Family
ID=36581675
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE602006002900T Active DE602006002900D1 (de) | 2005-03-09 | 2006-03-07 | Wässrige Dispersion zum chemisch-mechanischen Polieren, Kit zu deren Herstellung und chemisch-mechanisches Polierverfahren |
Country Status (6)
Country | Link |
---|---|
US (1) | US20060201914A1 (de) |
EP (1) | EP1700893B1 (de) |
KR (1) | KR101248708B1 (de) |
CN (1) | CN1831076A (de) |
DE (1) | DE602006002900D1 (de) |
TW (1) | TWI387642B (de) |
Families Citing this family (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2007069488A1 (ja) * | 2005-12-16 | 2007-06-21 | Jsr Corporation | 化学機械研磨用水系分散体および化学機械研磨方法、ならびに化学機械研磨用水系分散体を調製するためのキット |
WO2007116770A1 (ja) * | 2006-04-03 | 2007-10-18 | Jsr Corporation | 化学機械研磨用水系分散体および化学機械研磨方法、ならびに化学機械研磨用水系分散体を調製するためのキット |
JP5013732B2 (ja) * | 2006-04-03 | 2012-08-29 | Jsr株式会社 | 化学機械研磨用水系分散体、化学機械研磨方法、化学機械研磨用キット、および化学機械研磨用水系分散体を調製するためのキット |
US7824568B2 (en) * | 2006-08-17 | 2010-11-02 | International Business Machines Corporation | Solution for forming polishing slurry, polishing slurry and related methods |
EP2090400A4 (de) * | 2006-09-15 | 2010-11-03 | Hitachi Chemical Co Ltd | Mittel zum chemisch-mechanischen polieren (cmp), additivlösung für die cmp-poliermittel und verfahren zum polieren eines substrats durch verwendung des poliermittels und der additivlösung |
CN101490814A (zh) * | 2006-10-06 | 2009-07-22 | Jsr株式会社 | 化学机械研磨用水系分散体及半导体装置的化学机械研磨方法 |
JP2008117807A (ja) * | 2006-10-31 | 2008-05-22 | Fujimi Inc | 研磨用組成物及び研磨方法 |
JP4614981B2 (ja) * | 2007-03-22 | 2011-01-19 | Jsr株式会社 | 化学機械研磨用水系分散体および半導体装置の化学機械研磨方法 |
US8349207B2 (en) * | 2007-03-26 | 2013-01-08 | Jsr Corporation | Aqueous dispersion for chemical mechanical polishing and chemical mechanical polishing method for semiconductor device |
JP5327427B2 (ja) * | 2007-06-19 | 2013-10-30 | Jsr株式会社 | 化学機械研磨用水系分散体調製用セット、化学機械研磨用水系分散体の調製方法、化学機械研磨用水系分散体および化学機械研磨方法 |
WO2008156054A1 (ja) * | 2007-06-20 | 2008-12-24 | Asahi Glass Co., Ltd. | 研磨用組成物および半導体集積回路装置の製造方法 |
CN102352187B (zh) * | 2007-07-05 | 2015-03-18 | 日立化成株式会社 | 金属膜用研磨液及研磨方法 |
JPWO2009031389A1 (ja) * | 2007-09-03 | 2010-12-09 | Jsr株式会社 | 化学機械研磨用水系分散体およびその調製方法、化学機械研磨用水系分散体を調製するためのキット、ならびに半導体装置の化学機械研磨方法 |
KR100970094B1 (ko) * | 2007-10-10 | 2010-07-16 | 제일모직주식회사 | 구리 배선 연마용 cmp 슬러리 조성물 및 이를 이용한연마 방법 |
US8506359B2 (en) * | 2008-02-06 | 2013-08-13 | Jsr Corporation | Aqueous dispersion for chemical mechanical polishing and chemical mechanical polishing method |
KR101461261B1 (ko) * | 2008-02-18 | 2014-11-12 | 제이에스알 가부시끼가이샤 | 화학 기계 연마용 수계 분산체 및 화학 기계 연마 방법 |
WO2009104517A1 (ja) * | 2008-02-18 | 2009-08-27 | Jsr株式会社 | 化学機械研磨用水系分散体および化学機械研磨方法 |
JP5207002B2 (ja) * | 2008-02-27 | 2013-06-12 | Jsr株式会社 | 化学機械研磨用水系分散体およびそれを用いた化学機械研磨方法、化学機械研磨用水系分散体の再生方法 |
JP5472585B2 (ja) | 2008-05-22 | 2014-04-16 | Jsr株式会社 | 化学機械研磨用水系分散体および化学機械研磨方法 |
JP5361306B2 (ja) * | 2008-09-19 | 2013-12-04 | Jsr株式会社 | 化学機械研磨用水系分散体および化学機械研磨方法 |
CN101724347A (zh) * | 2008-10-10 | 2010-06-09 | 安集微电子(上海)有限公司 | 一种化学机械抛光液 |
US8480920B2 (en) * | 2009-04-02 | 2013-07-09 | Jsr Corporation | Chemical mechanical polishing aqueous dispersion, method of preparing the same, chemical mechanical polishing aqueous dispersion preparation kit, and chemical mechanical polishing method |
US8192644B2 (en) | 2009-10-16 | 2012-06-05 | Fujifilm Planar Solutions, LLC | Highly dilutable polishing concentrates and slurries |
CN101993662B (zh) * | 2010-12-13 | 2012-11-07 | 西安北方捷瑞光电科技有限公司 | 一种铈基抛光粉悬浮液的制备方法 |
KR101340550B1 (ko) * | 2010-12-31 | 2013-12-11 | 제일모직주식회사 | 화학기계적연마 조성물 및 연마 방법 |
CN103146306B (zh) * | 2011-12-07 | 2016-12-28 | 安集微电子(上海)有限公司 | 一种tsv阻挡层抛光液 |
CN103173127B (zh) * | 2011-12-23 | 2016-11-23 | 安集微电子(上海)有限公司 | 一种用于硅通孔阻挡层平坦化的化学机械抛光液 |
US9358659B2 (en) | 2013-03-04 | 2016-06-07 | Cabot Microelectronics Corporation | Composition and method for polishing glass |
CN106796878B (zh) * | 2014-11-13 | 2021-02-09 | 三菱瓦斯化学株式会社 | 抑制了包含钨的材料的损伤的半导体元件的清洗液、及使用其的半导体元件的清洗方法 |
US10507563B2 (en) | 2015-04-22 | 2019-12-17 | Jsr Corporation | Treatment composition for chemical mechanical polishing, chemical mechanical polishing method, and cleaning method |
KR102699885B1 (ko) * | 2016-12-01 | 2024-08-29 | 솔브레인 주식회사 | 화학적 기계적 연마를 위한 슬러리 조성물 및 이를 이용한 연마 방법 |
CN114829538B (zh) * | 2019-12-26 | 2024-04-26 | 霓达杜邦股份有限公司 | 研磨用浆料 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4866503B2 (ja) * | 1998-12-28 | 2012-02-01 | 日立化成工業株式会社 | 金属用研磨液材料及び金属用研磨液 |
JP3736249B2 (ja) | 2000-01-12 | 2006-01-18 | Jsr株式会社 | 半導体装置の製造に用いる化学機械研磨用水系分散体 |
JP2002050595A (ja) * | 2000-08-04 | 2002-02-15 | Hitachi Ltd | 研磨方法、配線形成方法及び半導体装置の製造方法 |
JP3768401B2 (ja) * | 2000-11-24 | 2006-04-19 | Necエレクトロニクス株式会社 | 化学的機械的研磨用スラリー |
US6568997B2 (en) * | 2001-04-05 | 2003-05-27 | Rodel Holdings, Inc. | CMP polishing composition for semiconductor devices containing organic polymer particles |
JP2004533115A (ja) * | 2001-04-12 | 2004-10-28 | ロデール ホールディングス インコーポレイテッド | 界面活性剤を有する研磨用組成物 |
JP5017574B2 (ja) * | 2001-05-25 | 2012-09-05 | エア プロダクツ アンド ケミカルズ インコーポレイテッド | 酸化セリウム研磨剤及び基板の製造方法 |
US7279119B2 (en) * | 2001-06-14 | 2007-10-09 | Ppg Industries Ohio, Inc. | Silica and silica-based slurry |
US6821897B2 (en) * | 2001-12-05 | 2004-11-23 | Cabot Microelectronics Corporation | Method for copper CMP using polymeric complexing agents |
US20040162011A1 (en) * | 2002-08-02 | 2004-08-19 | Jsr Corporation | Aqueous dispersion for chemical mechanical polishing and production process of semiconductor device |
KR100891612B1 (ko) * | 2002-12-20 | 2009-04-08 | 주식회사 동진쎄미켐 | 구리 배선 공정에 대한 연마 효율 및 선택비가 우수한화학-기계적 연마 슬러리 조성물 |
TWI291987B (en) * | 2003-07-04 | 2008-01-01 | Jsr Corp | Chemical mechanical polishing aqueous dispersion and chemical mechanical polishing method |
US7419911B2 (en) * | 2003-11-10 | 2008-09-02 | Ekc Technology, Inc. | Compositions and methods for rapidly removing overfilled substrates |
-
2006
- 2006-03-07 DE DE602006002900T patent/DE602006002900D1/de active Active
- 2006-03-07 EP EP06110799A patent/EP1700893B1/de not_active Not-in-force
- 2006-03-08 KR KR1020060021662A patent/KR101248708B1/ko active IP Right Grant
- 2006-03-08 US US11/369,870 patent/US20060201914A1/en not_active Abandoned
- 2006-03-09 CN CNA2006100568937A patent/CN1831076A/zh active Pending
- 2006-03-09 TW TW095107911A patent/TWI387642B/zh active
Also Published As
Publication number | Publication date |
---|---|
TW200643156A (en) | 2006-12-16 |
CN1831076A (zh) | 2006-09-13 |
EP1700893A1 (de) | 2006-09-13 |
KR20060097633A (ko) | 2006-09-14 |
TWI387642B (zh) | 2013-03-01 |
EP1700893B1 (de) | 2008-10-01 |
US20060201914A1 (en) | 2006-09-14 |
KR101248708B1 (ko) | 2013-03-28 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |