DE3309240A1 - Photoconductive recording element - Google Patents

Abstract

In a photoconductive recording element with a support for a photoconductive recording element and an amorphous layer showing photoconductivity and containing an amorphous material containing silicon atoms as matrix, the amorphous layer has a first layer region containing oxygen atoms as atoms participating in the structure, and a second layer region containing atoms from group III of the periodic table as atoms participating in the structure, which are continuously distributed in the direction of the layer thickness and are concentrated at the support side, the first layer region being located in the interior in the support side part of the amorphous layer, and the following relationship applying: To/T </= 1 where To is the layer thickness of the first layer region and T is obtained by subtracting To from the layer thickness of the amorphous layer.

Description

Photoconductive recording element

The invention relates to a photoconductive recording element which is resistant to electromagnetic waves such as light, including in the broadest sense UV rays, visible light, IR rays, X-rays and ΛΑ rays are to be understood, is sensitive.

Photoconductive materials that make up photoconductive Layers for solid state imaging devices, electrophotographic imaging members on the Field of image generation or manuscript reading devices must have high sensitivity, a high signal-to-noise ratio. / Photocurrent (I) / dark current (I,) _ /, spectral absorption properties that correspond to the spectral properties The electromagnetic waves with which the radiation is applied correspond to a good photoelectric wave Sensitivity or a good response to light and a desired dark resistance value have and must not be harmful to health during use. In addition, with a solid-state

B / 13

Dresdner Bank (Munich) Account 3939 844

Bayer. Vereinsbank (Munich) Account S08 941

Posischeck (Munich) account 670-43-804

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An image pickup device is also required to handle residual images easily within a predetermined time or can be eliminated. In the case of an imaging member for electrophotographic use which built into an electrophotographic device intended for use in offices as an office machine it is particularly important that the imaging member not be harmful to health.

From the above-mentioned point of view, recently, amorphous silicon (hereinafter referred to as referred to as a-Si) as a photoconductive material. For example, DE-OSS 27 46 967 and 28 55 718 Applications of a-Si for use in imaging members for electrophotography Purposes known, and from DE-OS 29 33 411 is the use of a-Si for use in a reading device known with photoelectric conversion.

Attempts have been made to use the photoconductive recording elements with photoconductive layers formed from the known a-Si with regard to individual properties, including various electrical, optical and photoconductive properties such as the dark resistance value, the sensitivity to light and the response to light as well as properties relating to environmental influences in use and also stability over time and durability . improve, but under the current circumstances there are further improvements in overall properties necessary.

For example, when using the a-Si photoconductor for the imaging member of an electrophotographic apparatus often observed that during

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Use a residual potential when there is an increase in photosensitivity and dark resistance is intended.

When such a photoconductive recording element is used repeatedly over a long time, various troubles arise, for example, one Accumulation of signs of fatigue due to repeated use or the so-called ghost image phenomenon, whereby residual images are generated.

a-Si materials can also be used as part of the construction Atoms Hydrogen atoms or halogen atoms such as fluorine or chlorine atoms to improve their electrical properties and photoconductive properties, atoms such as boron or phosphorus atoms to regulate the type of electrical conduction and further contain other atoms to improve other properties. Depending on the way in which these atoms involved in the structure are contained, sometimes problems related to electrical or photoconductive properties or dielectric strength the formed layer.

For example, the following problems arise: The life of the photoconductive cells formed in the Layer of photocarrier produced by irradiation in the layer is not sufficiently long. In the dark The injection of electrical charges from the carrier side cannot be sufficient in areas Dimensions are hindered or inhibited.

In the design of a photoconductive material, therefore, must go along with improvement the a-Si materials for themselves overcoming all

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such problems as mentioned above should be sought.

With a view to overcoming the above-mentioned problems, the present invention has conducted extensive studies on the applicability and utility of a-Si as a photoconductive material for electrophotographic imaging members, solid-state image scanning devices and reading devices, etc.
carried out.

As a result of these investigations, it was surprisingly found according to the invention that a photoconductive Recording element with a photoconductive layer made of a-Si, in particular made of an amorphous one Material formed from hydrogen atoms (H) and / or halogen atoms (X) in a matrix of silicon is / hereinafter referred to as a-Si (H, X) / (for example of so-called hydrogenated, amorphous silicon, halogenated, amorphous silicon or halogenated silicon, hydrogenated, amorphous silicon), properties that are extremely good not only for practical use shows, but is also essentially superior in every respect to known photoconductive recording elements is when the photoconductive recording element is constructed to have a particular layer structure which will be explained below. This photoconductive Recording element has particularly excellent

Properties for electrophotographic purposes. 30th

It is an object of the invention to provide a photoconductive recording element which exhibits stable electrical, optical and photoconductive properties in a substantially constant manner, caused by the environment in which it is used

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essentially not be affected, one particularly shows good resistance to light fatigue, has excellent durability without after repeated use causes any signs of deterioration, and. completely, or is essentially free of residual potential.

The invention is also intended to provide a photoconductive recording element, that during a charge treatment carried out to generate electrostatic charges in one Extent sufficient to allow the photoconductive recording element to be used as a Imaging member for electrophotographic use uses a common electrophotographic process in a very effective manner Way can be carried out, is capable of carrying or holding charges.

The invention is also intended to provide a fo.toconductive recording element for electrophotographic purposes be made available with the easy pictures

'high quality, the high density, one clarify Halftone and high resolution

can be. ■ ■

· ■ · Furthermore, a photoconductive Recording element with a high photosensitivity, a high S / N ratio or signal-to-noise ratio and a high dielectric strength.

The object of the invention is achieved by the photo-capable recording element characterized in claim 1.
35

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* The preferred embodiments of the invention are explained in more detail below with reference to the accompanying drawings.

FIGS. 1 and 11 are schematic representations of embodiments of the layer structure of the inventive, photoconductive recording element.

FIGS. 2 to 10 show examples of the distribution of the atoms of group III in the second layer region (III) of the amorphous layer of the invention, photoconductive recording element.

12 and 13 are schematic representations of devices which are used for the production of the invention, photoconductive recording element can be used.

14 through 22 show the distribution of boron atoms and oxygen atoms in embodiments of the invention.

The photoconductive recording element 100 shown in Fig. 1 consists of a carrier 101 and a amorphous layer 102 lying above carrier 101 ', 25- shows the photoconductivity and a-Si, in particular . a-Si (H, X).

The amorphous layer 102 has a first layer region (0) 103, which acts as the atoms involved in the structure Contains oxygen atoms, and a second layer region (III) 104, which as atoms involved in the structure atoms of group III, which is distributed continuously in the direction of the layer thickness and on the side of the Carrier 101 are enriched on.

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In the example of FIG. 1, the second layer area (III) 104 occupies the entire layer area of the amorphous Layer 102, while the first layer area (O) 103 is part of the second layer area (III) 104 and is present in the interior below the surface of the amorphous layer 102.

An upper layer portion 105 of the amorphous layer 102 does not contain oxygen atoms that affect moisture resistance and can influence the resistance to corona ions. Oxygen atoms are only in the first one Layer range (0) 103 included.

Only in the first layer area (0) .103 are oxygen atoms built in, mainly to improve dark resistance and adhesion between the support 101 and the amorphous layer 102. In contrast, in order to increase the sensitivity no oxygen atoms incorporated in the upper layer region 105.

The oxygen atoms contained in the first layer region (0) 103 are in the direction of the layer thickness continuously and substantially evenly distributed and also in the area to the interface between the support 101 and the amorphous layer 102 parallel plane substantially evenly distributed.

. As atoms' of group III, which in.dem the amorphous layer • 30 102 forming, second layer area (III) 104 are contained, B (boron), Al (aluminum), Ga (gallium), Mentioned in (indium) and Tl (thallium), etc., with B and Ga being preferred.

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The atoms of- group III are in the second layer- region (III) 104 in the direction of the layer thickness similar to the above-mentioned oxygen atoms distributed, and the distribution of the atoms of the group in that parallel to the surface of the support 101 Level is essentially uniform.

The layer thickness' of the first layer region (0) 103 and the layer thickness of the upper layer region 105 are important factors for achieving the object of the invention, so that they can be used in the design of the photoconductive Careful selection of the recording element should be made in order to impart desirable properties to the photoconductive recording element.

The layer thickness To of the first layer region (0) 103 is suitably 50 μm or less, preferably 30 pm or less, and particularly 10 pm or less.

The layer thickness T of the upper layer region 105 is suitably 0.5 μm or more, preferably 1 pm or more and in particular 3 pm or more.

The lower limit of the layer thickness To of the first layer region (0) 103 and the upper limit of the layer thickness T of the upper layer region 105 can be used in the design of the photoconductive recording element in appropriately based on an organic relationship between the required properties both visual areas and the required properties of the entire amorphous layer 102 as desired be determined.

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In the context of the invention, the lower limit of the

Layer thickness To and the upper limit of the layer thickness.

Y is appropriately selected so that the following

Relationship is fulfilled:
5

To / T = l.

The layer thickness To and the layer thickness T are chosen so that To / T ^ 1 is appropriate, preferably 10- To / T = 0.9 and in particular To / T ^ O.8 applies.

In the embodiment of a photoconductive recording element according to the invention shown in FIG. 1 are in the upper layer region 105 atoms of the group

15 III of the periodic table as atoms involved in the structure, so that the second layer area (III) 104 occupies the entire layer region of the amorphous layer 102. In an alternative embodiment the upper layer region 105 does not contain any atoms

Group III, so that the first layer area (0) and the second layer area (III) can be identical.

The photoconductive recording element in the upper layer region 105 no ■ group III atoms

contains, shows better properties in repeated use under an atmosphere with high Moisture, d. H. sufficient durability for long-term use under one atmosphere with high humidity.

Furthermore, according to a further embodiment, the second layer region (III) can be in the first Layer area (0) are formed.

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The amount of oxygen atoms contained in the first layer region (O) may vary accordingly determined by the required properties of the photoconductive recording element to be formed and is suitably from 0.001 to 50 atom%, preferably from 0.002 to 40 atom% and especially 0.003 to 30 atomic%.

When the slice thickness To of the first slice region (0). is sufficiently large or To more than 2/5 of the Total thickness (To + T) of the first amorphous layer (I) is the upper limit of the amount in the oxygen atoms contained in the first layer area (0) suitably 30 atom%, preferably 20 atom% and especially 10 atomic%.

In the context of the invention, the layer thickness (To + T) is suitably from 1 to 100 μm, preferably from 1 to, from the point of view of the desired electrophotographic properties and economy
80 pm and in particular 2 to 50 pm.

FIGS. 2 to 10 show typical examples of the distribution of the in the second layer region (III) the amorphous layer of the photoconductive recording element according to the invention containing atoms of the Group III in the direction of the layer thickness.

In the examples of the. FIGS. 2 to 10 can show the first layer region (0) containing oxygen atoms with the be identical to the second layer area (III), contain the second layer area (III) or with the second Layer area (III) have at least a part of the area which they form with one another in common. Consequently is based on the description below

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the first layer region containing oxygen atoms (O) only referred to when special explanation is necessary.

In FIGS. 2 to 10, the abscissa shows the content C of the group III atoms, while the ordinate shows the layer thickness t of the second layer region (III) which forms the amorphous layer having the photoconductivity. t _R shows the position of the interface on the carrier

10 side, while t is the position of the interface on the

Side that is opposite to the carrier side shows. That is to say, the second layer region (III) containing the atoms of group III is _{formed starting from the t B} side in the direction of the t _T side.

According to the invention, the second layer region (III) consists of a-Si (H.X), which is the photoconductive recording element forming material, and the second layer region (III) can either have the entire range of photoconductivity showing amorphous layer or part of it.

.If the above-mentioned second layer area (III) in the context of the invention occupies a part of the amorphous layer, it is shown in FIG. 1 in the case of one Example preferred, the second layer area (III) as the lower layer area of the amorphous layer 102, which is the interface on the side of the support. 101 contains to be provided.

FIG. 2 shows a first typical example of the distribution of the group III atoms contained in the second layer region (III) in the direction of the layer thickness.
35

COpy

- 1

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According to the example shown in FIG. 2, the atoms of group III are contained in the formed, second layer region (III) from the interface layer t "to the other interface layer t- in such a way that the concentration C of the atoms of group III assumes a constant value C. ', while the concentration C of the atoms of group III gradually decreases from the position t to the interface position t' starting from the value C_. The concentration C of the atoms of group III is given the value C _{in the interface position ΐ φ.}

In the example shown in FIG. 3, such a distribution is produced that the concentration C car atoms of group III gradually decreases continuously from the position t_ to the position t_ starting from the value C
enough.

borrowed until it is in position t "the value C

In the case of FIG. 4, the concentration C of the group III atoms is from the position t _n to the position t _o

JD ά

held at a constant value C _g while the

Concentration C between position t “and position

trp gradually decreases and continuously able t_ receives a value of essentially Ό.

In the case of Fig. 5, the concentration of Group III atoms gradually increases from the position t _R where the concentration is Cg to the position t where the concentration becomes substantially zero

continuously from.

In the example shown in FIG. 6, the concentration C of the group III atoms is from the position t_ to

is held at a constant value C _n at position t “, while it receives _{the value C 10 in position t“.} from

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from position t "to position t", the concentration C decreases between position t ₃ and position t- in the form of a linear function.

. In the example shown in FIG. 7, the distribution is produced in such a way that the concentration of the group III atoms from the position t _n to the position t. assumes a constant value C ..., while the concentration C depends on the position t. up to the position t "decreases in the form of a linear function from the concentration C ₁ P to the concentration C.".

In the example shown in Fig. 8, the concentration increases C of the group III atoms from position t "° to position t" in the form of a linear function from the concentration C to the value O.

In Fig. 9, an example is shown in which the concentration C of Group III atoms depends on the position

tg up to the position t ~ in the form of a linear function from the concentration C ₁₅ to the concentration

. C ₁ - decreases, while C between position 't. _c and the position t »is kept at a constant value C ₁₆ .

^: 1

In the example shown in FIG. 10, the concentration C of the atoms of group III in the position t _{ß has} the value C ₁₇ - the concentration C then initially gradually decreases up to the position t _fi and decreases in the vicinity of the position t _fi suddenly · up to the value Cg in position t_. Between position tg and position t ₇ , the concentration suddenly decreases at the beginning and then gradually until it is in position t _? reaches the value C- ", and the concentration

tion C takes between the position t „and the position t _o ob / ο

very gradually and reaches the value C _{0n at t o} .

ο 20

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Between the position t _ß and the position t ™, the concentration along the in Fig. 10 curve shown by the value C_ _o up to a value of substantially 0 from.
5

A few typical examples of the distribution of the in the second layer area (III) Group III atoms contained are shown in the direction of the layer thickness. According to the invention, in the amorphous layer, a second layer area (III) · be provided which has a portion on the carrier side with a higher value of the concentration C of the group III atoms and on the side of the interface layer t ™ a proportion in which the concentration C is compared has obtained a significantly lower value with the concentration on the carrier side.

According to the invention, the second layer region (III) forming the amorphous layer has as described above on the carrier side a localized area (A), which the atoms of group III in a higher Contains concentration.

When the symbols shown in Figs. 2 to 10 are used, the localized area (A) may preferably be provided so that its position is not more than 5 µm from the interface position t _β .

In such a case as described above, according to the present invention, the above-mentioned localized area (A) may in some cases be designed to include the entire layer area (L ") extending from the interface layer. t _n starting to

extends to a thickness of 5 / µm, while

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1, in other cases, the localized area (A) can be designed to _{occupy a part of (L T} ).

Depending on the required properties of the amorphous layer formed, it can be determined in a suitable manner whether the localized area (A) should be designed as part of the layer area (L _T ) or should occupy the entire layer area (L ™).

The localized area (A) may suitably be designed so that the group III are distributed in the direction of the layer thickness in such a way that the maximum value C of the concentration of Group III atoms (the maximum value of concentration ■ in the distribution profile) generally 50 atomic ppm or is more, preferably 80 atomic ppm or more, and particularly 100 atomic ppm or more.

This means that the second layer region (III) according to the invention can preferably be designed in such a way that the maximum value C of the content of the atoms of group III in the distribution profile is at a depth which, with a layer thickness of 'not more than 5 μm from the Carrier side 'is removed (or in a layer area with a thickness of 5 μm, calculated from t').

According to the invention the content of the Group III atoms, those mentioned in the above, the second shift range ³ ^ (III) are included, are set as desired in a suitable manner so that the object of the invention is achieved. This content is more suitable-

4th
wisely in the range from 0.01 to 5 χ 10 atomic ppm,

4th
preferably in the range from 0.5 to 1 10 atomic ppm

and in particular in the range from 1 to 5 χ 10

m

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¹ atomic ppm.

The carrier used in the context of the invention can be electrically conductive or electrically insulating. Metals such as NiCr, stainless steel, Al, Cr, Mo, Au, Nb, Ta, V,. Ti, Pt and Pd and alloys thereof can be mentioned.

Foils or plates made of synthetic resins, including polyester, polyethylene, Polycarbonate, cellulose acetate, polypropylene, polyvinyl chloride, polyvinylidene chloride, polystyrene and polyamides include glasses, ceramics, papers and others

Materials are mentioned. 15th

This electrically insulating support are preferably used in a form that a surface of the support has been made electrically conductive at least, and to the electrically conductive upper made ■ * ^u surface is a layer or applied multiple layers.

Glass is made electrically conductive, for example, by applying a thin film of NiCr, Al, Cr, Mo, Au, Ir, Nb, Ta, V, Ti, Pt, Pd, In ₂ O ₃ , SnO ₂ or ITO (In ₃ O ^ SnO ₂ ) is formed, and synthetic resin films such as polyester films are made electrically conductive by vacuum evaporation, electron beam deposition or sputtering or other methods

a thin film of a metal such as NiCr, Al, Ag, Pb, Zn, Ni ,. Au, Cr, Mo, Ir, Nb, Ta, V, Ti or Pt is formed or by covering the surface with a such metal is laminated.

·. .

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The shape of the carrier can be chosen in the desired manner, and the carrier can, for example in the form of a cylinder, a band or a plate ■ or in other shapes. If that Photoconductive recording element 100 shown in Fig. 1, for example, as an imaging element for electrophotographic Purposes used is carried out for a continuous, high speed Copying method is preferred in the form of an endless belt or a cylinder.

The thickness of the support can be determined as desired so that a desired photoconductive one Recording element is obtained. If the photo

! 5 conductive recording element must be flexible, the carrier becomes as thin as made possible. Taking into account the manufacture of the carrier, handling and mechanical For strength, the carrier is generally 10 µm or greater in thickness.

The amorphous layer consisting of a-Si (H, X) can in the context of the invention, for example, according to a Vacuum evaporation method using the discharge phenomenon such as the glow discharge process, the sputtering process, the ion plating process etc. can be produced.

For the production of the a-Si (H.X), amorphous layer after the glow discharge process becomes a gaseous starting material for supply of Si atoms together with a gaseous • starting material for the introduction of H atoms and / or a gaseous feedstock for the feed

• ·. ■

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* of halogen atoms (X) in a deposition chamber, which can be brought to a reduced pressure, initiated, and in the deposition chamber a glow discharge is generated to a predetermined

5 surface of the placed in a predetermined position Support to form an a-Si (H, X) layer.

When the sputtering method is used, the sputtering is carried out using a Si target in an atmosphere of an inert gas such as Ar or He or in one based on such an inert gas Gas mixing is carried out, and in this atomization, one or more than one gas is used for introduction of hydrogen atoms (H) and / or halogen atoms (X)

¹ ^ introduced into the deposition chamber used for atomization.

As halogen atoms (X) contained in the amorphous layer in the present invention, if desired, ² ^ fluorine, chlorine, bromine and iodine can be mentioned, with fluorine and chlorine being preferred.

Gaseous or gasifiable silicon hydrides (silanes) such as

Si _o H_, Si ₀ H ₀ and Si ₇₁ H _{10 are} mentioned, where SiH. .

c- D OO 4 JU 4

and .SipHg due to the simple layering process and des. good efficiency with respect to the supply of Si are particularly preferred.

As effective, gaseous starting materials for the introduction of halogen atoms, many halogen compounds, for example gaseous or gasifiable halogen compounds such as gaseous halogens, halides, Interhalogen compounds and halogen-substituted silane derivatives are used. In addition, preferential

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¹ wi.'ise gaseous or gasifiable silicon compounds, which contain one or more than one halogen atom per molecule and are composed of silicon atoms and halogen atoms, are used.
5

Halogen compounds which are preferably used are gaseous halogens such as fluorine, chlorine, bromine and iodine and interhalogen compounds such as BrF, ClF, ClF ₃ , BrF ₅ , BrF ₃ , JF ₃ , JF ₇ , JCl and JBr.

As silicon compounds containing one or more than one halogen atom per molecule, i. H. as with one or more than one halogen atom substituted silane derivatives are silicon halides such as SiF.,

! 5 Si ₃ F ₆ , SiCl ₄ and SiBr _{4 are} preferred.

If for the production of the photoconductive recording element according to the invention by glow discharge such a silicon compound, which one or ■ more as a halogen atom is used, an amorphous layer composed of halogen atoms can be applied to the support containing a-Si is formed without a gaseous one for the supply of Si

Silicon hydride is used.
25th

In the manufacture of "an amorphous film containing halogen atoms" by glow discharge, a gaseous silicon halide for supplying Si and a gas such as Ar, H ₉ or He are used in a predetermined

-

Mixing ratio and with a predetermined gas flow rate introduced into a deposition chamber serving to form an amorphous layer, to create a glow discharge and form a plasma atmosphere from these gases. As a result becomes an amorphous layer on a predetermined support

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educated. For the introduction of hydrogen atoms In the amorphous layer, a predetermined amount of a gaseous, Silicon compound containing hydrogen atoms

5 can be mixed.

Each gas can be in the form of a single species or in the form of multiple species in a predetermined

Mixing ratio can be used. 10

For the production of an amorphous layer consisting of a-Si (H, X) by reactive sputtering or ion plating, a Si target is used, and im
In the case of atomization, the atomization takes place in a

predetermined gas plasma atmosphere performed while in the case of ion plating, polycrystalline silicon or single crystal silicon as evaporation. source is brought into an evaporation boat and the silicon evaporation source through a

^ O resistance heating process or an electron beam process etc. is heated and vaporized to the vaporized flying material by a predetermined gas plasma atmosphere to let go through.

A sputtering process or an ion plating process is used to introduce halogen atoms in the layer to be formed the above-mentioned halogen compound or the above-mentioned one or silicon compounds containing more than one halogen atom

bond is introduced into a deposition chamber to

to form a plasma atmosphere from this gas.

For the introduction of hydrogen atoms, a gaseous starting material is used for the introduction of Hydrogen atoms such as Hp or those mentioned above

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Silanes in a deposition chamber used for atomization introduced to form a .Plasmaatmosphäre from this gas.

In addition to the above-mentioned halogen compounds or halogen-containing silicon compounds, which are used as an effective, gaseous starting material for the introduction of halogen atoms, as a starting material for the formation of an amorphous layer ¹ ^ a gaseous or gasifiable halide containing hydrogen atoms as an element involved in the structure, For example, a hydrogen halide such as HF, HCl, HBr and HJ or a halogen-substituted silicon hydride such as SiH "F _p , SiH _{5 I 9} , SiH _p Cl _p , SiHCl,., SiH ₉ Br ₉ and SiHBr ₁₃ can be used.

These halides, which contain one or more than one hydrogen atom per Molkül, can be hydrogen atoms, who are capable of doing the electrical or the

photoelectric properties in an effective manner

to regulate, as well as introduce halogen atoms into an amorphous layer, which is why these halides are preferred starting materials for the introduction of halogen atoms.
25th

For the introduction of hydrogen atoms into the structure of an amorphous layer, unlike the above-mentioned material, a gaseous silicon hydride such as SiH ₄ , Si ₂ H ₅ , Sl ₃ H ₃ or Si ₄ H ₁₀ and a silicon compound serving to supply Si are used in. a deposition chamber is initiated and a glow discharge is caused.

In the case of the reactive sputtering method, it becomes 35

for example, a Si target is used, and a gas

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for the introduction of halogen atoms, H _? Gas and, if desired, an inert gas such as He or Ar.

to form a plasma atmosphere in a deposition chamber initiated, followed by the production of an amorphous layer consisting of a-Si (H, X) on a Carrier carried out a sputtering with the 'Si target

will.

In addition, a gas such as B _O H _C can be introduced for doping.

10 can be used.

In the context of the invention, the amount of hydrogen atoms (H), the amount of halogen atoms (X) or the total amount of hydrogen atoms and halogen atoms, contained in the amorphous layer of the photoconductive recording element, preferably 1 to. 40 Atom% and especially 5 to 30 atom%.

The amount of hydrogen atoms (H) and / or halogen atoms (X) contained in the amorphous layer can be regulated be by, for example, the carrier temperature and / or the amount of the incorporation of hydrogen atoms (H) or halogen atoms (X) in the deposition chamber raw material to be introduced or the discharge power, etc. is regulated.

For the formation of the second layer region (III) containing group III atoms or the first Layer area (0), which contains oxygen atoms,

in the amorphous layer during the manufacture of the amorphous layer by a process such as glow discharge or the reactive sputtering method together with the above-mentioned starting material a starting material for the formation of the amorphous layer

for the introduction of Group III atoms and a '

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¹ starting material can be used for the introduction of oxygen atoms in order to incorporate the constituents into the layer to be formed by regulating their amounts.

When the first layer area (0) and the second layer area (III) in the amorphous layer by glow discharge are produced, the starting material, the gaseous starting material for the production each layer portion prepared by using the above-mentioned raw material for preparation the amorphous layer and a raw material for introducing oxygen atoms and / or a raw material combined for the introduction of group III atoms. As one such material for introduction of oxygen atoms and / or group III atoms can be most gaseous or most gasifiable materials in gasified form, which are oxygen atoms or atoms involved in their construction

of group III are used.

For the formation of the first layer region (0), for example a mixture of a gaseous starting material, the silicon atoms (Si) as involved in the construction Atoms, a gaseous starting material, contains oxygen atoms (0) as the atoms involved in its structure contains, and, if desired, a gaseous starting material, which contains hydrogen atoms (H) and / or halogen atoms (X) as atoms involved in the structure, in a desired proportion, a mixture of " a gaseous starting material containing silicon atoms ■ (Si) as atoms involved in the structure, and a gaseous starting material, the oxygen atoms (0) and hydrogen atoms (H) as involved in the structure Contains atoms, in a desired ratio or a mixture of a gaseous starting material, which contains silicon atoms (Si) as atoms involved in the structure, and a gaseous starting material which

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Silicon atoms (Si), oxygen atoms (0) and hydrogen atoms (H) as the atoms involved in the structure.

Alternatively, a mixture of a gaseous starting material containing silicon atoms (Si) and hydrogen atoms (H) as the atoms involved in its structure, and a gaseous starting material, the oxygen atoms (0) as the atoms involved in the structure.

The starting material for the introduction of oxygen atoms can be oxygen (Op), ozone (O ₀ ), nitrogen monoxide (NO), nitrogen dioxide (N0 _o ), nitrous oxide

15 '(N ₂ O), nitrous oxide (N ₂ O ₃ ) ,. Dinitrogen tetroxide "(N ₂ O ₄ ), dinitrogen pentoxide (N ₃ O ₅ ) and nitrogen trioxide (NO ₃ ) and lower siloxanes that contain Si, O and H as atoms involved in the structure, such as disiloxane (H ₃ SiOSiH ₃ ) . and trisiloxane (H ₃ SiOSiH ₂ OSiH ₃ ) may be mentioned.

Boron hydrides such as ^B p ^H 6 ' ^B 4 ^H 10' ^B 5 ^H 9 ' B ₁ -H ₁₁ , B_H _1O , B_H _1O and BH ₁ . and boron halides such as

D 11 D IU D ld D 14

BF ₃ , BCl ₃ and BBr "are used. As starting materials for the introduction of atoms of group III can also · AlCl ₁₃ , GaCl ₀ , Ga (CH ₀ ). _o , InCl ₀ or -TlCl ₀ etc. can be used.

The content of the group atoms to be introduced into the group III-containing layer region (III) III can be freely regulated by adjusting the gas flow rate and the gas flow rate ratio of the raw materials for the

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leadership of the group III atoms, the discharge power, the substrate temperature and pressure within the deposition chamber regulated.

For the formation of the first layer region (0) containing oxygen atoms according to the sputtering process, a single crystal or polycrystalline Si wafer or SiO "wafer or a wafer in which a mixture of Si and SiO _? is included, and the atomization is carried out in an atmosphere of various gases.

When a Si wafer is used as a target, for example, a gaseous starting material is used for the introduction of oxygen atoms and, if necessary, of 'hydrogen atoms and / or halogen atoms, that, if desired, with a diluting gas. can be thin, in a serving for atomization Deposition chamber introduced to inside the deposition chamber to form a gas plasma and to carry out a sputtering of the Si wafer.

Alternatively, Si and SiO _{2 can be used} as separate targets or a plate-shaped target made from a mixture of Si and SiO »can be used, and the sputtering is carried out in a gas atmosphere containing at least hydrogen atoms (H) and / or halogen atoms ( X) .contains. As the gaseous starting material for introducing oxygen atoms, the starting materials for introducing oxygen atoms mentioned in connection with the above-described glow discharge method can also be used as effective in the case of atomization

Gases are used. 35

m *

- 31 - DE 2850

within the scope of the invention can be used as a suitable, diluting Gas that is produced when the amorphous layer is formed by the glow discharge method or the sputtering method is to be used, noble gases such as He, .Ne

5 or Ar can be mentioned.

Figure 11 is a schematic representation of another preferred embodiment of the photoconductive recording element. A photoconductive recording element 1100 has a carrier 1101 for a photoconductive. ■ Recording element, a lying above the carrier 1101, first amorphous layer (I) 1102 containing a-Si (H, X) and showing photoconductivity, and a second amorphous one Layer (II) 1106.

The photoconductive recording element 1100 has the same layer structure as the photoconductive recording element 1, but with the difference that • that on the first amorphous layer (I) 1102 the second amorphous layer (II) 1106 is applied. The first amorphous layer (I) 1102 has a first layer region (0) 1103, which contains oxygen atoms as atoms involved in the structure, a second layer area (III) 1104, which contains atoms of group III as atoms involved in the structure, which in the direction of the layer thickness continuously distributed and enriched on the side of the support 1101, and an upper layer, area 1105. The materials involved in the construction, the manufacturing conditions and the manufacturing

³ ^ drives are the same as for the amorphous layer 102 in Fig. 1..

In. the upper layer region 1105 does not contain any oxygen atoms. Only in the first layer area (0) 1103 contains oxygen atoms.

- 32 - DE 2850

In the case of the photoconductive recording member 1100 shown in Fig. 11, the second is amorphous Layer (II) 1106 of an amorphous material consisting of silicon atoms, carbon atoms and, if desired, Hydrogen atoms and / or halogen atoms is formed as atoms involved in the structure, / below referred to as "a-SiC (H, X)" and has a free surface 1107.

The second amorphous layer (II) 1106 is mainly provided to achieve the object of the invention in view the moisture resistance, the properties of continuous, repeated use, the dielectric strength, the properties with regard to the influence of ambient conditions during application and to meet the durability.

In the photoconductive recording member shown in FIG 1100 have the amorphous materials that make up the first amorphous layer (I) 1102 and the second amorphous layer (II) 1106 form silicon atoms as a common component, creating at the interface this . amorphous layers ensure adequate chemical and electrical stability.

As a-SiC (HX) forming the second amorphous layer (II), an amorphous material composed of silicon atoms and carbon atoms (a-Si C ₁ ,

el X ~ cl

wherein 0 <a <l), an amorphous material formed from silicon atoms, carbon atoms and hydrogen atoms, / a- (Si, C ₁ ,) H, wherein 0 <b, c '<lJ and an amorphous

U X "~ D C X ~ C

Material consisting of silicon atoms, carbon atoms, halogen atoms (X) and, if desired, hydrogen atoms is formed, / a- (Si_, C) (X, H), wherein

U X ~ Q 6 Χ "" "β

0 «id, e <l_7 are mentioned as effective materials.

* "330924C

- 33 - DE 2850

The second amorphous layer (II) consisting of a-SiC (H, X) can be produced by the glow discharge process, the sputtering process, the ion implantation method, the ion plating method, the electron beam method and other processes. These manufacturing methods may suitably depend on on various factors such as the manufacturing conditions, the extent of the investment burden for facilities, the manufacturing scale, the ·.

Desired properties for the product to be produced photoconductive recording elements are ■ required, etc. can be selected. The glow discharge method or the sputtering method can preferably be used because in this case the advantages are obtained that the production conditions for the production relatively easily regulated by 'photoconductive recording elements with desired properties can be and in the second amorphous layer to be produced (II) silicon atoms together with carbon atoms, Hydrogen atoms and halogen atoms can be introduced in a simple manner.

In addition, within the scope of the invention, the second amorphous layer (II) can be formed by the glow discharge method and the atomization method can be used in combination in the same apparatus system.

For the formation of the second amorphous layer (II) after the glow discharge process can be used in a for ° 0 vacuum evaporation deposition chamber into which a carrier was brought into it, gaseous starting materials for the formation of a-SiC (H, X), optionally in a predetermined mixing ratio with can be mixed with a diluting gas, and a glow discharge is excited,

- 34 - DE 2850

u'n to form a gas plasma from the gas introduced and thereby on the first amorphous layer (I) already formed on the aforementioned support was to deposit a-SiC (H, X).

In the context of the invention, as gaseous starting materials for the formation of a-SiC (.H, X) most Substances are used - the at least one selected from Si, C, H and X as atoms involved in the structure Contain atomic type and which are gaseous substances or gasifiable substances in gasified Form acts.

If a gaseous starting material, which acts as the atoms involved in the structure, i. H. as one of Si, C, H and X selected atomic type containing Si atoms is used, for example, a mixture of one gaseous starting material, which contains Si atoms as atoms involved in the structure, with a gaseous one Starting material, the carbon atoms as involved in the construction Contains atoms, and a gaseous starting material, the H- 'or. X atoms as atoms involved in the structure contains, can be used in a desired mixing ratio, or a mixture can also be used from a gaseous starting material, which contains Si atoms as atoms involved in the structure, with a gaseous starting material, which contains C and H or X atoms as atoms involved in the structure, in a desired Mixing ratio can be used. It

is also possible a mixture of a gaseous

Starting material, the Si atoms as involved in the structure Contains atoms, with a gaseous starting material, the Si, C and Η atoms or Si, C and X atoms as

contains atoms involved in the structure.
35

** "330924C

- 35 - DE 2850

* Alternatively, a mixture can also be used a gaseous starting material that contains Si and H or X atoms as atoms involved in the structure, with a gaseous starting material, the carbon atoms

5 contains as atoms involved in the structure, possible.

In addition to the gaseous starting materials which are effectively used in the context of the invention for the formation of the second amorphous layer (II), gaseous silicon hydrides containing Si and Η atoms as atoms involved in the structure, for example silanes such as SiH. , Si _o H _c , Si ₀ H ₀ and Si .H ₁ ,., And connec-

4 ■ d DOO 4 IU

fertilize the C and Η atoms as involved in the structure Atoms contain, for example, saturated hydrocarbons with 1 to 5 carbon atoms, ethylenic Hydrocarbons with 2 to 5 carbon atoms and acetylenic hydrocarbons with 2 to 4 carbon atoms, belong.

In detail, for example, methane (CH ₄ ), ethane (CH-), propane can be used as saturated hydrocarbons. (C ₀ H ₀ ), η-butane (nC _{/ 1} H _irv ) and pentane (C ₁ -H ₁₀ ), as

OO -4 IU O ie

ethylenic hydrocarbons ethylene (CpH ₄ ), propylene (C ₀ H-), butene-1 (CH ₀ ), butene-2 (CH ₀ ), isobutylene '

OD 4 ο 4 ο

( ^c ₄ ^H g) ^{and pentene} ( ^C 5 ^H io ^ ^{and as} acetylenic hydrocarbons acetylene (CH-), methylacetylene (CH .)

and butyne (CH _C ) may be mentioned. 4 b

As a gaseous starting material, the Si-, C- and

Contains Η atoms as atoms involved in the structure, can

for example alkylsilanes such as Si (CHg) ₄ and Si (C ₃ H ₅ J _4. In addition to these gaseous starting materials, an effective gaseous starting material for the introduction of H can of course also be 35

H ₂ can be used.

- .Ί6 - DE 2850

In the context of the invention, preferred halogen atoms (X) to be contained in the second amorphous layer (II) are F, Cl, Br and I, with F and Cl being particularly preferred.
5

The incorporation of hydrogen atoms in the second amorphous layer (II) is from the viewpoint of manufacturing cost advantageous because part of the raw materials serving gas species in the continuous formation of layers together with the first amorphous Layer (I) can be used together.

In the context of the invention, as a gaseous starting material, which in the formation of the second amorphous Layer (II) can be used effectively for the introduction of halogen atoms (X), substances, which are gaseous under normal temperature and pressure conditions, or easily gasifiable substances be mentioned.

To such gaseous starting materials ■ for the Introduction of halogen atoms (X) can be simple halogen substances, hydrogen halides, interhalogen compounds, Silicon halides and halogen-substituted silicon hydrides belong.

In detail can be used as simple halogen substances

gaseous halogens such as fluorine, chlorine, bromine and iodine,

■ as hydrogen halides HF, HJ, HCl and HBr, as inter-

³⁰ halogen compounds BrF, ClF, ClF ₃ , ClF ₅ , BrF, BrF, JF ₇ , JF ₅ , JCl and JBr, as silicon halides SiF ₄ ,

Si ₂ F ₆ , SiCl ₄ , SiCl ₃ Br, SiCl ₃ Br ₂ , SiClBr ₃ , SiCl ₃ J and

SiBr ₄ and, as halogen-substituted silicon hydrides, SiH ₂ F ₂ , SiH ₂ Cl ₂ , SiHCl ₃ , SiH ₃ Cl, SiH ₃ Br, SiH ₃ Br ₃ and

SiHBr ,, be mentioned.

• ^: · - "* 3309241

- 37 - DE 2850

In addition to these materials, halogen-substituted, paraffinic hydrocarbons such as CCl ₄ , CHF ₃ , CH ₂ F ₂ , CH ₃ F, CH ₃ Cl, CH ₃ Br, CH ₃ J and C ₂ H ₅ Cl, fluorinated sulfur compounds such as SF. and SF- and halogen-containing alkylsilanes such as SiCl (CH ₃ ) _3> SiCl ₂ (CH ₃ > ₂ and SiCl "CH _{o" are used} as effective materials.

For the formation of the second amorphous layer (II) by the sputtering process, a single crystal or polycrystalline Si disk or C disk or a disk in which a mixture of Si and C are contained is used as a target and atomized in an atmosphere of various gases.

If a Si wafer is used as a target,. ' for example a gaseous starting material for the introduction of at least carbon atoms, which, if desirably, may be diluted with a diluting gas, into a deposition chamber serving for atomization initiated in order to form a gas plasma in the deposition chamber and to carry out a sputtering of the Si wafer.

Alternatively, Si and C can be used as separate targets or a plate-shaped target can be made from a mixture of Si and C are used, and the sputtering is carried out in a gas atmosphere which, if required, at least hydrogen atoms or halogen atoms contains.

30.. .

As a gaseous starting material for the introduction of C or for the introduction of H or X can also in the case of atomization, the starting materials used in connection with the above described glow discharge process as effective,

- 38 - DE 2850 * gaseous starting materials were mentioned.

As a diluting gas, according to the invention in the formation of the second. amorphous layer (II) after Glow discharge process or the sputtering process is to be used, noble gases such as He, Ne or Ar can preferably be mentioned. .

The second amorphous layer (II) of the invention Recording element should be carefully formed so that it can be given the required properties in exactly the desired manner.

That is, a substance that is considered to be involved in the construction Contains atoms Si, C and, if necessary, H and / or · X, depending on the manufacturing conditions can take various forms from crystalline to amorphous forms, assume electrical properties can, from the properties of a conductor to ■ the properties of a semiconductor to the. properties of an insulator, and photoconductive properties can assume ranging from the properties of a photo-conductive to the properties of a not enough photoconductive substance. According to the invention, the production conditions are consequently described in the desired way 'precisely selected so that a-SiC (H, X), the desired, depending on the application Has properties that can be formed.

30. If the second amorphous layer (II) for example mainly intended to improve dielectric strength, a-SiC (H, X) is considered to be amorphous Manufactured material that shows pronounced electrical insulating properties under the conditions of use.

· "- '330924t

- 39 - DE 2850

When the second amorphous layer (II) on the other hand provided \ mainly for improving the properties in the continuous, repeated application or the properties with respect to the influence of ambient conditions during application, the extent of the above-mentioned, electrical insulation can be reduced to a certain extent , and a-SiC (H, X) can be produced as an amorphous material which is sensitive to the light with which is irradiated to a certain extent.

During the formation of the second amorphous layer (II) consisting of a-SiC (H, X) on the surface of the first amorphous layer (I), the substrate temperature during the layer formation is an important factor that affects the structure and affects the properties of the layer to be formed, and the substrate temperature during the layer formation is suitably precisely regulated according to the invention so that a-SiC (H, X)., which has the desired properties can be produced.

For an effective solution to the object of the invention, the carrier temperature in the formation of the second amorphous layer (II) suitably in an optimum temperature range according to that for forming the second amorphous layer (II) applied method can be selected.

When the second amorphous layer (II) made of a-Si C ₁ "'■

a χ — a

is to be formed, the carrier temperature can be preferred

know

wise 20 to 300 ⁰ C and in particular 20 to 250 ° C be

the second amorphous - 40 - »* - · · · '" . * • 3309240 Layer (II) DE 2850 .Venn Carrier temperature I educated from a- (p ) c 1-c or preferably will target, can the 50 to 350 ° C. and

in particular amount to 100 to 250 ⁰ C. 5

The sputtering process can advantageously be used to form the second amorphous layer (TI) or the glow discharge method can be used because in this case a precise regulation of the composition ratio of the atoms forming the layer or a regulation of the layer thickness to relative can be done easily in comparison with other procedures. If the second amorphous Layer (II) is formed by this layer formation method, the discharge power and the Gas pressure during layer formation similar to the above-mentioned carrier temperature important factors, the properties of the a-SiC (H, X) to be produced

■ influence.

20th . s

For an effective production of a-Si C ₁ , which the

a j. —A

has the properties required to achieve the object of the invention, with good productivity the discharge power is preferably 50 W to 250 W, and particularly 80 W to 150 W.

In the case of a- (Si ₅ C ₁ ^ ^ H ^ or a-CSi ^^ CH.X) ^, the discharge power may preferably be 10 to
300 W and in particular 20 to 200 W.

30 ·

The gas pressure in a deposition chamber can be suitably about 0.013 to 6.7 mbar, preferably about 0.013 to 1.3 mbar and in particular about 0.13 to 0.67 mbar be.

■ "-. *" 330924C

- 41 - DE 2850

The numerical ranges mentioned above can be used as preferred numerical ranges in the context of the invention. Ranges for the carrier temperature and the discharge power, etc. in the manufacture of the second amorphous Layer (II) may be mentioned. However, these factors for layer formation should not be independent of one another are determined separately, but the optimal values of the individual factors for the layer formation are suitably established on the basis of an organic relationship with one another so that a second., • amorphous layer (II) can be formed, which consists of a-SiC (H, X) with desired properties.

The content of carbon atoms and. the salary dci Hydrogen atoms in the second amorphous layer (II) of the photoconductive recording element according to the invention are similar to the conditions for Production of the second amorphous layer (II) other important factors for achieving the desired Properties with which the object of the invention is achieved.

If the second amorphous layer (II) of the recording element according to the invention consists of a-Si C ₁ , the content of the carbon atoms contained in the second amorphous layer (II) can generally be 1 × 10 to 90 atom%, preferably 1 to 80 atom -% and in particular 10 to 75 atom%. That is, a in the formula a-Si C ₁ is generally 0.1 to

ei JL -el

0.99999, preferably 0.2 to 0.99 and in particular 0.25 to 0.9.

When the second amorphous layer (II) is made of a- (Si. C ₁ ,) H ₁ , the content of carbon atoms contained in the second amorphous layer (II) can generally be

-3
1 χ 10 to 90 atom%, preferably 1 to 90 atom%

- 42 - DE 2850

ind in particular 10 to 80 atom%, while the content of hydrogen atoms can generally be 1 to 40 atom%, preferably 2 to 35 atom% and in particular 5 to 30 atom% ·. A photoconductive recording member formed to have a hydrogen atom content within these ranges is eminently suitable for practical applications. In the formula a- (Si, C ₁ ,)
H ₁ can b in general 0.1 to 0.99999, preferably 0.1 to 0.99 and in particular 0.15 to 0.9, while c in general 0.6 to 0.99, preferably 0.65 to 0.98 and in particular 0.7 to 0.95.

If the second amorphous layer (II) made of a- (Si, C ₁ ,)
(H, X), the content of the second

X "~ C?

amorphous layer (II) containing carbon atoms are generally 1 10 to 90 atom%, preferably 1 to 90 atom% and in particular 10 to 80 atom%. The content of halogen atoms can generally be 1 to 20 atom%, preferably 1 to 18 atom% and in particular 2 to 15 atom%. A photoconductive recording member formed to have a halogen atom content within these ranges is eminently suitable for practical applications. The amount of any hydrogen atoms present can generally be up to 19 atom% and preferably up to 13 atom%. In the formula a- (Si, C _1. ) (H ₁ X) ₁ can

α ι-α e x-e

^ou d is generally 0.1 to 0.99999, preferably 0.1 to 0.99 and in particular 0.15 to 0.9, while e is generally 0.8 to 0.99, preferably 0.82 to 0, 99 and in particular 0.85 to 0.98.

35 ·

· ^: · - '* 330924

- 43 - DE 2850

In the context of the invention, the range of the numerical Value of the layer thickness of the second amorphous layer (II) is one of the important factors for an effective Solution to the problem of the invention.

The range of the numerical value of the layer thickness of the second amorphous layer (II) should be appropriate depending on the intended purpose, can be determined so that the object of the invention becomes more effective Way is resolved.

It is . required that the layer thickness of the second amorphous layer (II) in a suitable manner. with due consideration of the relationships to the content of carbon, hydrogen or Halogen atoms, the layer thickness of the first amorphous layer (I) and other organic relationships for the properties required for the individual layer areas. Also suitably also economic aspects such as productivity or the possibility of mass production considered.

In the context of the invention, the layer thickness of the second amorphous layer (II) is suitably from 0.003 to 30 μm, preferably from 0.004 to 20 μm, and in particular. 0.005 to 10 μm.

The following is an example of manufacture

^{uw of} the photoconductive recording element by glowing ·

charge explained.

Fig. 12 shows an apparatus for making a photoconductive recording member by Glow discharge.

- 44 - DE 2850

The gas bombs 1202 to 1206 contain airtight, gaseous starting materials for the formation of the individual layers of the photoconductive recording element according to the invention. For example, 1202 is a bomb containing SiH.gas diluted with He (purity: 99.999 %; hereinafter referred to as SiH./He for short), 1203 is a bomb,

_{which contains B O} H _C gas diluted with He, (purity:

ά ο

99.999 %; below briefly with B _? H ~ / He), 1204 is a bomb containing Si_H_ gas diluted with He

ά b

(purity: 99.99 %; hereinafter referred to as Si ₂ H ₆ / He for short), 1205 is a bomb containing NO gas (purity: 99.999 %), and 1206 is a bomb containing SiF diluted with He . -Gas contains (purity: 99.999%; hereinafter referred to as SiF./He for short).

In order to allow these gases to flow into the reaction chamber 1201, the main valve 1234 is first opened, to evacuate the reaction chamber 1201 and the gas piping after confirming that the valves 1222 to 1226 of the gas bombs 1202 to 1206 and the ventilation valve 1235 closed and. the inlet valves 1212 to 1216, the outflow valves 1217 to 1221 and the auxiliary valves 1232 and 1233 are open. as In the next step, the auxiliary valves 1232 and 1233 and the outflow valves 1217 to 1221 are closed, when the value read on the vacuum measuring device 1236 has reached about 6.7 nbar.

The following is an example of the manufacture of a photoconductive recording element based on a cylindrical carrier 1237 has an amorphous layer with the layer structure shown in FIG. 1, shown.

S 4 * *

• ^: · "**" 330924

- 45 - DE 2850

SiH "/ He gas, B_H_ / He gas and NO gas are extracted from the '·

4 d D

Gas bombs 1202, 1203 and 1205 in the flow control ■ devices 1207, 1208 and 1210 initiated by ' the valves 1222, 1223 and 1225 for adjusting the pressures on the outlet manometers 1227, 1228 and 1230 to a value of 0.98 bar each and by opening the inlet valves 1212, 1213 and 1215 to be opened gradually. Then the outflow valves 1217, 1218 and 1220 and the auxiliary valve 1.232 gradually opened, and each gas is introduced into the reaction chamber 1201.

At this time the exhaust valves 1217, 1218 and 1220 are adjusted so that the flow rate

! 5 ratio of SiH "/ He: B _o H ~ / He: N0 a pre-

4 d b

is given a correct value, and the opening of the main valve 1234 is adjusted by observing the pressure read from the vacuum gauge 1236 so that the pressure in the reaction chamber 1201 becomes a desired value. After confirming that the temperature of the cylindrical substrate 1237 was adjusted to 50 ° to 400 ° C. by a heater 1238, a power source 1240 is set to a desired one
Power value set in order to cause a glow discharge in the reaction chamber 1201, at the same time the concentration distribution of the boron atoms contained in the layer to be formed is regulated in the direction of the layer thickness by opening the valve 1218 according to a predetermined curve of the rate of change by a manual method. ' or is gradually changed by means of an external motor, etc.

When the layer region (B, 0) containing boron and oxygen atoms is formed in a desired layer thickness has been, the stratification will be under the same

- 46 - DE 2850.

Conditions, however, with the exhaust valve 1220 ^ eachlossen and the introduction of NO gas into the reaction chamber 1201 is ended, continued continuously, creating a layer area on the layer area (B, 0) (B) containing boron atoms but not oxygen atoms is formed in a desired thickness will. As a result, an amorphous layer having desired properties is formed on the support.

The second layer region (III) containing boron atoms can be produced in a desired thickness, by introducing BpH_ / He gas into the reaction chamber during the production of the amorphous layer 1201 ended at a suitable point in time, whereby a layer area (III) can be produced, of the entire layer area of the amorphous. Layer or part of it.

After a Layer region (B) ″ has been formed in a desired layer thickness, for example, the layer formation under the same conditions, but with the introduction of BpH_ / He gas into the reaction chamber 1201 by complete closing of the exhaust valve 1218 is terminated, continued continuously, whereby on the Layer area (B) a layer area containing neither boron atoms nor oxygen atoms as part of the amorphous Layer is formed.

For the production of a layer region which contains oxygen atoms but no boron atoms, the Layer formation can be carried out, for example, using NO gas and SiH./He- gas.

BATH ORIGINAL

· - 330924

- 47 - DE 2850

For the incorporation of halogen atoms in an amorphous layer, SiF./He can be added to the gas «
chamber 1201 are initiated.

can be added to the gas SiF./He and in the reaction

Of course, all exhaust valves are used with the exception of the exhaust valves that are used in the formation of the gases used in individual layers are necessary, closed, and to prevent that. that at the Formation of the previous layer used gas during the formation of the individual layers in the reaction chamber 1201 and in the pipelines from the discharge valves 1217 to 1221 to the reaction chamber 1201 remains, if necessary, a procedure can be carried out in which the system is once to

¹ ^ is evacuated to achieve a high vacuum by closing the outflow valves 1217 to 1221 and opening the auxiliary valves 1232 and 1233 when the main valve 1234 is fully open.

^ O During the formation of the layer, the cylindrical Carrier 1237 can be rotated with a motor 1239 at a constant speed in order to achieve a smooth To cause stratification.

° Fig. 13 shows an example of a device for Manufacture of Another Photoconductive Recording Element.

In gas bombs 1302 to 1306, hermetically sealed,

Contain gaseous starting materials for the formation of the individual layer areas of the inventive, photoconductive recording element. For example, bomb 1302 contains SiH ₄ / He gas, bomb 1303 contains B _O H _R / He gas, bomb 1304 contains SiH / HeG, bomb 1305 contains NO gas and contains

- 48 - DE 2850

the 1306 SiF ₄ / He gas bomb.

In order to allow these gases to flow into a reaction chamber 1301, a main valve 1334 is first opened, to evacuate the reaction chamber 1301 and the gas piping after confirming the valves 1322 to 1326 of the gas bombs 1302 to 1306 and a ventilation valve 1335 closed and inflow valves 1312 to 1316, discharge valves 1317 to 1321 and a. 10 auxiliary valve 1332 are open. If the one on one Vacuum measuring device 1336 has reached about 6.7 nbar, the auxiliary valve 1332 and the outflow valves 1317 to 1321 are closed.

The following is one embodiment of the formation of a photoconductive recording member having the layer structure shown in Fig. 11 will be explained.

SiH./He-Gas from bomb 1302, B "H_ / He-Gas from

4 d. D.

Bomb 1303 and NO gas from bomb 1305 are in flow regulators 1307, 1308 'and 1310 allowed to flow in by opening valves 1322, 1323 and 1325 so that the pressures at the Outlet manometers 1327, 1328 and 1330 are each regulated to a v / ert of 0.98 bar, and by the Inlet valves 1312, 1313 and 1315 are gradually opened. Then the outflow valves 1317, 1318 and 1320 and the auxiliary valve 1332 gradually

. opened to the individual gases in the reaction chamber

³⁰ 1301 to flow into it. The discharge valves 1317, 1318 and 1320 are regulated so that the flow rate ratio of SiH ₄ / He gas: B ₂ H / He gas: N0 gas has a desired value, and the opening of the main valve 1334 is also regulated, while .

observed the reading on vacuum gauge 1336

- '330924

- 49 - DE 2850

is so that the pressure in the reaction chamber 1301 reaches a desired value. After was then confirmed that the temperature of the substrate was 1337 set by a heater 1338 at 50 ° to 400 ⁰ C, a current source is set 1340 to a desired power to cause glow discharge in the reaction chamber 1301, and. at the same time, the concentration distribution of the boron atoms contained in the layer to be formed is regulated in the direction of the layer thickness by gradually changing the opening of the valve 1318 according to a predetermined curve of the changing speed by a manual method or by means of an external motor, etc..

When the layer region (B, 0) containing boron and oxygen atoms is formed in a desired layer thickness has been, the stratification takes place under the same conditions, but with the discharge valve 1320 closed and the introduction of NO gas into the reaction chamber 1301 is ended, continuously continued, whereby on the layer area (B, 0) a layer area (B), the boron atoms, but no oxygen atoms, is formed in a desired thickness.

As a result, a first amorphous layer (I) having desirable properties is formed on the support.

The boron atom-containing layer region (III) can be produced in a desired thickness by

SQ one in the production of the first amorphous layer

(I) the introduction of B H / He gas into the reaction '. chamber 1301 terminated at a suitable point in time, whereby a layer region (III) can be formed, which occupies the entire layer area of the first amorphous ■ layer (I) or part of it.

- 50 -. DE 2850

If, in the above-described example, the layer region (B) has a desired layer thickness has been formed, the layer is formed, for example, under the same conditions, but with the introduction of BpHg / He gas into the reaction chamber 1301 is terminated by fully closing the discharge valve 1318, continued continuously, whereby on the layer region (B), a layer region containing neither boron atoms nor oxygen atoms as part the first amorphous layer (I) is formed.

For the production of a layer region containing oxygen atoms but not boron atoms the layer formation, for example using NO gas and ■ SiH./He-.Gas can be carried out.

.For the incorporation of halogen atoms into a first amorphous Layer (I) can be added to the SiF./He gas and introduced into the reaction chamber 1301.

.

For the production of a second amorphous layer (II) on the first amorphous .Schicht (I), for example performed the following procedure. First, a shutter 1342 is opened; all gas supply valves are closed once and the reaction chamber 1301 is opened by fully opening the main valve Evacuated in 1334.

One high purity silicon disk 1342-1 and one high purity Graphite discs 1342-2 are used in a desired area ratio as targets on an electrode 1341, to which a high voltage can be applied, brought.

From the gas bomb 1306 previously _{filled with Ar gas instead of SiF 4} / He gas, Ar gas is introduced into the reaction chamber 1301, and the main valve

• ·

- 51 - DE 2850

1334 is regulated so that the internal pressure of the reaction chamber 1301 reaches 0.067 to 1.3 mbar. The high voltage power source 1340 is turned on to perform a sputtering using these targets, which leads to the formation of a second amorphous layer (II) on the first amorphous layer (I).

The content of the carbon atoms in the second amorphous layer (II) can optionally be. regulated by taking the area ratio of the silicon wafer 1342-1 to the graphite wafer 1342-2 and the Adjusts the weight ratio of silicon powder to graphite powder in the target.

Of course, all exhaust valves are used with the exception of the exhaust valves that are used in the formation of the gases used in the individual layers are necessary, closed, and to prevent that in the Formation of the gas used during the previous layer

* ® of the formation of the individual layers in the reaction chamber 1301 and in the pipelines from the discharge valves 1317 to 1321 to the reaction chamber 1301 • remains, if necessary, a process can be carried out in which the system is once up to ° to achieve a high vacuum evacuates wildly by closing the outflow valves 1317 to 1321 and opening the auxiliary valve 1332 when the main valve 1334 is fully open.

In view of the foregoing, the photoconductive recording member of the present invention can solve all of the problems mentioned above and it shows excellent electrical, optical and photoconductive properties, high dielectric strength and excellent environmental influence properties

- 52 - DE 2850

in the application.

The photoconductive recording element according to the invention is particularly useful when it is used as an imaging member for electrophotographic purposes becomes free of residual potentials in the generation of images and has stable electrical properties, high sensitivity, high S / N ratio, high resistance to light-fatigue and excellent properties when repeated Use. It can, repeatedly and stably, one high quality images having high density clear halftone and high resolution show can be produced.

ι »*

- 53 - DE 2850 ¹ Example 1

Using the apparatus shown in Figure 12, under the conditions given in Table IA an imaging member having an amorphous layer. with the concentration distribution of boron atoms (B) and oxygen atoms shown in Fig. 14 (0).

The obtained imaging member was placed in a charge exposure developing device. brought in, Corona charged at +5 kV for 0.2 s and immediately thereafter with a tungsten lamp as a light source through a translucent test card with an exposure value of 1.0 Ix.s imagewise exposed.

Immediately thereafter, the surface of the imaging member became a cascade development with a ^ O negatively charged, toner and toner carrier containing Developer, whereby good toner images were formed on the surface of the imaging member.

- 54 - DE 2850

Example 2

Using the apparatus shown in FIG an imaging member which is amorphous was prepared under the conditions shown in Table 2A Layer having the concentration distribution of boron atoms (B) and oxygen atoms shown in Fig. 15 (0).

The imaging member obtained was converted into a Charge-annealing developing device .introduced, Subjected to corona charging at +5 kV for 0.2 s and immediately afterwards with a tungsten lamp as a light source through a translucent test card

¹ ^ exposed imagewise through with an exposure value of 1.0 Ix.s.

Immediately thereafter, the surface of the imaging member became a cascade development with a negatively charged toner and toner carrier containing Developer, whereby good toner images were formed on the surface of the imaging member ..

- 55 - DE 2850

¹ Example 3 -

While changing the flow rate of B-Η, imaging members having amorphous layers having the concentration distribution of boron shown in Figs. 16 to 21 were prepared. The other conditions and evaluation were the same as in Example 1. The results are shown in Table 3A.
10

Example 4

Repeating the procedure of Example

1, but the oxygen content was changed by changing the flow rate of NO, Imaging members were prepared and evaluated as in Example 1. The results are in table 4A shown.

^20th Example 5

Repeating the procedure of Example

2, but the total thickness of the amorphous layer was 20 μm and the thickness of the first layer region was changed, imaging members were prepared and evaluated as in Example 2. The results are shown in Table 5A.

Example 6 30 '.

The procedure of Example 1 was repeated, however, the layer formation is carried out in accordance with Table 6A became. The imaging element obtained

showed good results. 35

_ 56 - DE 2850

¹ Example 7

Using the apparatus shown in Figure 13, under the conditions given in Table IB An imaging member was prepared comprising an amorphous layer (I) having the concentration distribution of boron atoms (B) and oxygen atoms shown in FIG (0).

The obtained imaging member was placed in a charge exposure developing device, Corona charged at +5 kV for 0.2 s and immediately thereafter with a tungsten lamp as a light source through a translucent test card

¹ ^ exposed imagewise through with an exposure value of 1.0 Ix.s.

Immediately thereafter, the surface of the imaging member was subjected to cascade development with a ² ^ negatively charged developer containing toner and carrier, whereby good toner images were formed on the surface of the imaging member.

The toner images were cleaned once with a ² ^ rubber blade, and then the image generation and purification steps mentioned above were repeated. No deterioration in the images was observed even when repeated 150,000 times or more.

30 '

- 57 - DE 2850 ¹ Example 8

Using the apparatus shown in Fig. 13, under the conditions shown in Table 2B an imaging member that is amorphous. Layer (I) with the concentration shown in FIG distribution of boron atoms (B) and oxygen atoms (0).

The obtained imaging member was placed in a charge exposure developing device, Corona charged at +5 kV for 0.2 s and immediately thereafter with a tungsten lamp as a light source through a translucent test card

¹ ^ exposed imagewise through with an exposure value of 1.0 Ix.s.

Immediately thereafter, the surface of the imaging member was subjected to cascade development with a negatively charged developer containing toner and toner carriers, on the surface of the Imaging member, good toner images were produced.

The obtained toner ^{images were} cleaned once with a rubber blade, and then the aforementioned image forming and cleaning steps were repeated. Even with 150,000 or more repetitions. no deterioration of the images was observed.

- 58 - DE 2850

Example 9

Using the apparatus shown in FIG an imaging member which is amorphous was prepared under the conditions shown in Table 3B Layer (I) having the concentration distribution of boron atoms (B) and oxygen atoms shown in Fig. 22 (O).

The obtained imaging member was placed in a charge exposure developing device, Corona charged at +5 kV for 0.2 s and immediately thereafter with a tungsten lamp imagewise exposed as a light source through a translucent test card with an exposure value of 1.0 Ix.s.

Immediately thereafter, the surface of the imaging member became a cascade development. with a ^ O negatively charged, containing toner and toner carriers Developer, whereby good toner images were formed on the surface of the imaging member.

The obtained toner images were cleaned once with a 5 x rubber blade, and then became the above mentioned imaging and cleaning steps are repeated. Even with 150,000 or more repetitions no deterioration of the images was observed.

• ^: "33092;

- 59 - DE 2850

¹ Example 10

By varying the flow rate of BpHg, imaging members were prepared which in each case an amorphous layer (I) with the concentration distribution of boron shown in FIGS. 16 to 21 exhibited. The other conditions and evaluation were the same as in Example 7.

10 The results are shown in Table 4B. Example 11

Repeating the procedure of Example 7 _except that the flow rate of NO was changed to change the oxygen content in the amorphous layer (I), an imaging member was prepared and the evaluation was made as in Example

7 carried out. The results are shown in Table 5B. shown.

Example 12

Repeating the procedure of Example ² ^ 8 except that the thickness of the amorphous layer (I) was 20 µm and the thickness of the first layer portion was changed, an imaging member was prepared and the same evaluation as in Example

8 was carried out. 30th

The results are shown in Table 6B. Example 13

Repeating the procedure of Example 7, but with the formation of the amorphous layer

(II) the applied area ratio of the silicon wafer to the graphite and the content ratio of the silicon atoms to the carbon atoms, in the amorphous layer (II) were changed, became an imaging member

5- manufactured. The imaging member obtained was about 50,000 times the image generation, development, and cleaning steps described in Example 7 and evaluation of image quality was made. The results are shown in Table 7B

¹⁰ shown.

Example 14

Repeating the procedure of Example 7, but with the layer thickness of the amorphous layer (II) was changed, an imaging member was prepared. The imaging, Development and purification steps were repeated with the results shown in Table 8B.

20 ■ '·

were obtained.

Example 15

Repeating the procedure of Example 7, but using the procedure for preparing the amorphous layer (I) was modified as shown in Table 9B, it became film formation carried out. A good result was obtained.

33092

- 61 - 'DE 2850

¹ Example 16

Using the apparatus shown in Fig. 13, under the conditions given in Table IC An imaging member was prepared comprising an amorphous layer (I) having the concentration distribution of boron atoms (B) and oxygen atoms shown in FIG (0).

The obtained imaging member was placed in a charge exposure developing device, Corona charged at +5 kV for 0.2 s and immediately thereafter with a tungsten lamp as a light source through a translucent test card

I ^ through with an exposure value of 1.0 Ix.s imagewise exposed.

Immediately thereafter, the surface of the imaging member became a cascade development with a ^ O negatively charged, toner and toner carrier containing Developer, whereby good toner images were formed on the surface of the imaging member.

The toner images obtained were once with a

^ ° rubber blade cleaned, and then- were the above mentioned imaging and cleaning steps are repeated. Even with 150,000 or more repetitions was no deterioration. of the images observed.

30 ..

_ 62 - DE 2850

¹ Example 17

Using the apparatus shown in Fig. 13, under the conditions shown in Table 2C An imaging member was prepared comprising an amorphous layer (I) having the concentration distribution of boron atoms (B) and oxygen atoms shown in FIG (0).

The obtained imaging element was placed in a charge exposure developer, Corona charged at +5 kV for 0.2 s and immediately thereafter with a tungsten lamp as a light source through a translucent test card

¹ ^ exposed imagewise through with an exposure value of 1.0 Ix.s.

Immediately thereafter, the surface of the imaging member was subjected to cascade development with a ² ^ negatively charged developer containing toner and carrier, whereby good halo images were formed on the surface of the imaging member.

The toner images were cleaned once with a ² ^ rubber blade, and then the image generation and purification steps mentioned above were repeated. No deterioration in the images was observed even when repeated 150,000 times or more.

- 63 - DE 2850.

¹ Example 18

Using the apparatus shown in Fig. 13, under the conditions shown in Table 3C An imaging member was prepared comprising an amorphous layer (I) having the concentration distribution of boron atoms (B) and oxygen atoms shown in FIG (O).

IQ The obtained imaging element was converted into a Charge exposure developing device brought in, Corona charged at +5 kV for 0.2 s and immediately thereafter with a tungsten lamp imagewise exposed as a light source through a translucent test card with an exposure value of 1.0 Ix.s.

Immediately thereafter, the surface of the imaging member became a cascade development with a negatively charged toner and toner carrier containing Developer, whereby good toner images were formed on the surface of the imaging member.

The toner images obtained were once with a

nc

* ° The rubber blade was cleaned, and then the aforementioned imaging and cleaning steps were repeated. Even with 150,000 repetitions or more, none was. Deterioration of the images observed.

30 35

* at ψ ν »

- 64 - DE 2850

Example 19

Repeating the procedure of Example

16, but the flow rate of B "H_ was changed, image-forming elements became

ti D

which had the concentration distribution of boron shown in FIGS. 16 to 21 in the amorphous layer (I). Evaluation was made as in Example 16.
·

The results are shown in Table 4C.
Example 20

¹ ^ repeating the procedure of Example

17, with "however, the flow rate of NO has been changed in order to increase the oxygen content in the To change amorphous layer (I), imaging members were prepared and the evaluation was made as carried out in Example 17. The results are shown in Table 5C.

Example 21 ■

² ^ Repeating the procedure of. example

18 except that the thickness of the amorphous layer (I) was 20 µm and the thickness of the first layer portion was changed, imaging members were prepared and the same evaluation as in Example

18 was carried out. The results are in table

6C shown.
Example 22

Repeating the procedure of Example 17, except that during the preparation of the amorphous

33092

- 65 - DE 2850

Gas to CpH subjected to the transfer step. The copying process was repeated about 50,000 times, and evaluation of the image quality was made.
10

The results are shown in Table 7C.

Example 23

By repeating the procedure of Example \ ·· 17, except that the layer thickness of the amorphous layer (II) was varied as shown in Table 8C manner, a film formation was carried out. The results of evaluation are shown in Table 8C.

Example 24

Repeating the procedure of Example. 17 except that the method of forming the amorphous layer (I) is changed as shown in Table 9C became a layering and a; Image quality assessment carried out. It was get a good result.

- 66 - DE 2850

Example 25

Using the apparatus shown in Fig. 13, under the conditions shown in Table ID 5, an imaging member was prepared comprising an amorphous layer (I) having the concentration distribution of boron atoms (B) and oxygen atoms shown in FIG (O).

The obtained imaging member was placed in a charge exposure developing device, A corona charge of - + 5 kV for 0.2 s and, immediately afterwards, a tungsten lamp as a light source through a translucent test card with an exposure value of 1.0 Ix.s imagewise exposed.

Immediately thereafter, the surface of the imaging member became a cascade development with a. containing negatively charged toner and toner carriers Developer, whereby good toner images were formed on the surface of the imaging member.

The obtained toner images were cleaned once with a rubber blade, and then became the above Repeatedly mentioned image generation and cleaning steps. Even if repeated 150,000 times or more no deterioration of the images was observed.

"*" 33092A

- 67 - DE 2850

example

Using the apparatus shown in Figure 13, under the conditions shown in Table 2D An imaging member was prepared comprising an amorphous layer (I) having the concentration distribution of boron atoms (B) and oxygen atoms shown in FIG (0).

The obtained imaging member was placed in a charge-imparting development device, Subjected to a corona charge of +5 kV for 0.2 s and immediately afterwards to a tungsten lamp as a light source through a translucent test card with an exposure value of 1.0 Ix. s pictorially exposed.

Immediately thereafter, the surface of the imaging member became a cascade development with a ^ O negatively charged, toner and toner carrier containing Developer, whereby good toner images were formed on the surface of the imaging member.

The obtained toner images were cleaned once with a rubber blade, and then, the above became mentioned imaging and cleaning steps are repeated. Even with 150,000 or more repetitions no deterioration of the images was observed.

- 68 - DE 2850

¹ Example 27

Using the apparatus shown in Figure 13, under the conditions given in Table 3D An imaging member was prepared comprising an amorphous layer (I) having the concentration distribution of boron atoms (B) and oxygen atoms shown in FIG (0).

The resulting imaging element was placed in a charge exposure developing device, Corona charged at +5 kV for 0.2 s and immediately thereafter with a tungsten lamp as a light source through a translucent test card

¹ ^ exposed imagewise through with an exposure value of 1.0 Ix.s.

Immediately thereafter, the surface of the imaging member was subjected to cascade development with a Negatively charged developers containing toner and toner carriers are subjected to "the surface of the. Image generation elements.nts good toner images were generated.

The toner images were cleaned once with a ² ^ rubber blade, and then the image generation and purification steps mentioned above were repeated. Even after repeating 150,000 times or more, no deterioration in the images was observed. '

- 69 - DE -2850

¹ Example 28

Repeating the procedure of Example 25, except that the flow rate of B "H _{C was} changed in order to obtain the concentration distribution d. b

of boron in the amorphous layer (I) as shown in Figs. 16 to 21, imaging members were prepared. Evaluation was made as in Example 25.
10

The results are shown in Table 4D. Example 29

¹ ^ Repeating the procedure of Example

25, but the flow rate of NO has been changed in order to increase the oxygen content in the to change amorphous layer (I), imaging members were prepared and evaluated as in Example 25,

^ Q where the results shown in Table 5D were obtained.

Example 30

Repeating the procedure of Example

26, but the thickness of the amorphous layer (I) was 20 μm and the thickness of the first layer region was changed, imaging members were prepared and the same evaluation as in Example 26 was made

was carried out. The results are shown in Table 6D. Example 31

Repeating the procedure of Example 25, but that in the formation of the amorphous

- 70 - DE 2850.

■ Layer (II) applied flow rate ratio has been changed by SiH.-GasiSiF.-GasiCpH.-Gas, the content ratio of silicon atoms to carbon atoms An imaging member was prepared about 50,000 times that in Example 25 the imaging, developing and cleaning steps described. The results of the evaluation the image quality are shown in Table 7D.

Example 32

An imaging member was prepared by repeating the procedure of Example 25 except changing the thickness of the amorphous layer (II). The resulting imaging member was repeatedly subjected to the imaging, developing and cleaning steps described in Example 25 to give the results shown in Table 8D.
.

Example 33

Repeating the procedure. of Example 25 but using the film forming method for the formation of the amorphous layer (I) was changed as shown in Table 9D, became an imaging member manufactured. . The evaluation showed a good result.

ω ο

to

Oil

Oil

Table IA

Used
gas By-
river
Schwin-
age
(Standard
ern ³ / min) Flow rate
relationship Discharge
power
(W / cm2) Layer deposition i-
manure speed
age.
(nm / s) ' layer
thickness
(fjm) First
layer
area SiH ₄ / He = l υ
NO
B_H _C / He = IO " ³ SiH ₄
= 200 NO / SiH ₄ = 1.5 x 10 " ²
B ₂ H ₆ / SiH ₄ = 2.0 x 10 "i 0 0.18 1.1 0.5. Second
layer
area SiH ₄ / He = 1 SiH ₄
= 200 0.18 1.1 19.5

Temperature of the Al support: 250 ° C

Discharge frequency: 13.56 MHz

Internal pressure of the reaction: 0.4 mbar chamber

ro oo

(JI

> t ft

I I i

I i I

co

GO CD CO

ω ο

bo σι

to ο

cn

cn ■

Table 2Α

■ Used
gas By-
river
Schwin-
age
(Standard-
cm3 / min) Flow rate
relationship Discharge
power
(W / ciiT) Shift separator
manure speed
age
(nm / s) layer
thickness
(around) First
layer
area SiH./He=l
NO
B _o H _c / He = 10 ^-3
Z. D SiH ₄
= 200 N0 / SiH ₄ = .1.5 10 " ²
B ₂ Hg / SiH ₄ = 2.0 x 10 " ⁴
j «υ 2.5xl0" ⁵ 0.18 1.1 0.5 Second
layer
area SiH ₄ / He = 1
B ₂ H ₆ / He = IO ^-3 SiH ₄
= 200 B ₂ Hg / SiH ₄ = 2.5x1θ " ⁵ 0.18 1.1 19.5

Al substrate temperature Discharge frequency Internal pressure of the reaction chamber

250 C 13.56 MHz 0.4 mbar

ro ι

ro

03

cn O

33 0927

DE 2850

Table 3A

Sample no.

A3-1

A3-2

A3-3

A3-4

A3-5

A3-6

Distribution as in

Fig. 16

Fig.17

Fig. 18

Fig. 19

Fig. 20

Fig. 21

valuation

@ no faulty images; high image quality Q no defective images; very good adhesion

- 74 -

Table 4A

DE 2850

Sample no. A4-1 A4-2 A4- 3 A4-4 A4- 5 A4- 6th A4-7 oxygen
salary
(Atom-%) 0.003 0.05 O, 5 • ι, ο 3, 0 . 5, 0 10.0 valuation
image
quality O O (°) <§> O

@ very good O good

33092 /

- 75 -

DE 2850

Table 5A

Sample no. A5-1 A5-2 A5-3 A5-4 A5-5 A5-6 A5-7 A5-8 Thickness of the
first
layer
area
(around) 0 _r 05 0.1 0.3 '0.8 3 7th 10 valuation
image
quality O © © © O O O

© ■ very good O 'good

ω ο

fco
ο

cn

CJi

Table 6A

Used
gas By- .
fly
Schwin
age
(Standard-
; m3 / min) Flow rate
relationship Discharge
power
(W / cm2) Layer deposition i-
manure speed
age.
(nm / s) layer
thickness
(pm) First
layer
area SiH ₄ / He = 1
SiF ₄ / He = L
NO
B ₂ H ₆ / He = 10 ^-3 SiH ₄
= 100 N0 / SiH ₄ = l _f 5xl0 ~ ²
B ₂ H ₆ / SiH ₄ / SiF ₄
= 2.0xl0 " ⁴ / 0.5 / 0.5
'* 0 / 0.5 / 0.5 0.18 1.5 0.5 Second
layer
area SiH ₄ / He = 1
SiF ₄ / He = 1 ^SiH 4
= 100 SiH ₄ / SiF ₄ = 1 0.18 1.1 19.5

co ο

to σι

Table 1 B.

Layer structure First
layer
area Used
gas Xarch-
soot-
jchwin-
Jigkeit
(Standard
at / min) Flow rate
relationship Cntla-
lung
.performance
(W / cm ² ) Layer-
deposit
manure
Schwin-
age
(nm / s) layer
thickness
(pm) Amorphous
layer
(I) Second
layer
area SiH ₄ / He = 1
NO
B_H _c / He = 10 " ³ SiH ₄
= 200 NO / SiH ₄ = 1.5x10 ~ ²
B ₂ H ₆ / SiH ₄ = 2.0 x 10 ~ ⁴ ^ 0 0.18 1.1 0.5 Amorphous layer
(II) SIH ₄ / He = I. SiH ₄
= 200 • 0.18 1.1 19.5 Ar Ar
= 200 Area ratio
Si disk: graphite
= 1.5: 8.5 0.3 0.3 0.5

Al support temperature: 250 ° C. Discharge frequency: 13.56 MHz

Internal pressure of the reaction chamber

■ j amorphous layer (I) 0.4 mbar
Amorphous layer (II) 0.27 mbar

cn
O

It ■

t ♦

GO CD CO

ω ο

bO

σι

to ο

cn

Table 2 B

Layer structure First
layer
area Used.
gas By-
"luss-
chwin-
Age
standard
at / min) Flow rate
relationship Sntla-
Guys-
power
(W / cm ² ) Layer-
deposit
manure
Schwin-
age
(nm / s) layer
thickness
(around) Amorphous
layer
(D. Second
layer
area SiH / He = I.
NO
B ₂ H _g / He = 10 ^-3 SiH ₄
= 200 NO / SiH ₄ = 1.5x10 ~ ²
B ₂ H ₆ / SiH ₄
= 2.0xl0 ~ ⁴ .λ. 2.5 x 10 ~ ⁵ 0.18 1.1 0.5 Amorphous layer
(II) SiH ₄ / He = 1
B ₂ H ₆ / He = 10 "^ ³ SiH ₄
= 200 B ₂ H ₆ / _SiH4 = 2.5x10 ^-5 0.18 ' 1.1 19.5 Ar Ar ■
= 200 Area ratio
Si disk: graphite
= 1.5: 8.5 0.3 ' O, 3 ¹ 0.5

Al substrate temperature. Discharge frequency

Internal pressure of the reaction chamber

: 25O ° C

: 13.56 MHz

ι Amorphous layer (I) 0.4 mbar Amorphous layer (II) 0.27 mbe

OO I

ro co σι O

GOV

GO

CD

CD

NO

Cu O

. bo cn

fco O

cn

Table 3 B

Layer structure First
layer
area Used
gas torch
: luss-
Schwin-
validity
(Ngrm-
m / min) Flow rate
relationship Sntla-
lung
power
(W / cm ² ) Layer-
deposit
clungsge
Schwin-
age
(nm / s) layer
thickness
(pm) Amorphous
layer
(D. Second
layer
area SiH ₄ / He = 1
NO
B ₂ H ₆ / He = 10 ^-3 SiH ₁ ,
4th
= 200 NO / SiH ₄ = I, ² ~ 5xlO
B ₂ H ₆ ZSiH ₄
= 1.5 x 10 " ⁴ ~ 7 x 10" ⁵ 0.18 1.1 19.5 Amorphous layer
(ID SiH ₄ / He = 1
B ₀ H ^ VHe = IO " ³ SiH ₄
= 200 B ₂ H ₆ ZSiH ₄
= 7xlO ~ ⁵ <v 6.5xl0 " ⁵ 0.18 ' 1.1 1.0 Ar Ar
= 200 Area ratio
Si disk: graphite
= 1.5: 8.5 0.3 0.3 ί 0.5

Temperature of the Al support: 250 ° C

Discharge frequency: 13.56 MHz

Internal pressure of the amorphous layer (I) 0.4 mbar

Reaction chamber

• Amorphous layer (II) 0.27 mbar

CD I.

ro

cn O

CO. »'· Ι CO CD CO

t 4B in the* *·* * · · · '•• "" •• 3309240 DE 2850 - 80 - Tabel

Sample no.

Distribution as in

valuation

B4-1

Fig. 16

B4-2

Fig.17

B4-3

Fig. 18

B4-4

Fig. 19

B4-5

Fig. 20

Co)

B4-6

Fig. 21

© no faulty images; high image quality Q no faulty images; very good adhesion

• *

• · · 4

"3.3092

- 81 Table 5B

DE 2850

Sample no.

B5-1

B5-2

B5-3

B5-4

B5-5

B5-6

B5-7

Oxygen content (atom %)

0.003

0.05

0.5

"1.0

3.0

5.0

10.0

Assessment of the image quality

© very good O -good

- 82 - DE 2850

Table 6B

Sample no.

Thickness of the first layer area (μι-η)

Review de _r image quality

B6-1

0.05

B 6-2

0/1

B6-3

0.3

B6-4

0.8

B6-5

B6-6

B6-7

B6-8

© very good O 'good

t \ 5

cn

Table 7B

Sample no. B7-1 B7-2 B7-3 'B7-4' B7-5 B7-6 B7-7 Si: C
Target '■
(Surfaces
relationship) 9: 1 6.5: 3.5 4: 6 2: 8 1: 9 0.5: 9.5 0.2: 9.8 Si: C
(Salary
relationship) 9.7: 0.3 8.8: 1.2 7.3: 2.7 4.8: 5.2 3: 7 2: 8 0.8: 9.2 Evaluation of the
Image quality Δ O @ ® O Δ χ

© very good Ο good

for the practical
Application sufficient

Somewhat incorrect images are generated

Table 8B

Sample no. Thickness of the
amorphous layer
(II) (jjm) Result B8-1 0.001 Tendency to generate
faulty images B8-2 0.02 no generation of errors
stick pictures at 20,000-
repeated repetition B8-3 0.05 stable at 50,000 times
or more repetitions B8-4 1 stable at 200,000 times
or more repetitions

Cu

to ο

σι

σι

Table 9 B

Shift up
building First
layer
area Used
gas ) urch-
Expressive
Schwin-
littleness
(Nqrm-
: m / min Flow rate.
employment relationship Discharge
power
(W / cm ² ) Shift away
divorce
speedy
speed
(nm / s) layer
thickness
(pm) kmor-
3he
layer
(D Second
Layer-
rich SiH ₄ / He = 1
SiF./He=l
NO; -
B ₂ Hg / He = 10 " ³ SiH ₄
= 100 NO / SiH ₄ = 1.5x10 ~ ²
B ₂ H ₆ / SiH ₄ / SiF ₄
= 2.0xl0 ~ ⁴ / 0.5 / 0.5
• v- 0 / 0.5 / 0.5 0.18 1/1 0.5 SiH / He = I.
SiF ₄ / He = 1 SiH ₄
= 100 SiH ₄ / SiF ₄ = 1 0.18 1f1 19.5

00 CJI

CO CO CD CD

to cn

Table 1 C.

Layer structure First
layer
area Used
gas ) urch-
river
Schwin-
Sweetness
[Standard
an, / irin) Flow rate;
relationship Lntla-
Guys-
power
(W / cm ² ) Layer-
deposit
manure
Schwin-
age ··
(nm / s) layer
thickness
(pm) Amorphous"
layer
(I). Second
layer
area SiH ₄ / He = 1
.NO
B ₂ H ₆ VHe = IO " ³ SiH ₄
= 200 NO / SiH ₄ = 1.5x10 ~ ²
B ₂ H ₆ / SiH ₄ = 2 _# 0xl0 " ⁴ ^ 0 0.18 1.1 0.5 Amorphous layer
(ID SiH ₄ / He = 1. SiH ₄
= 200 ·· 0.18 ' 1.1 19.5 SiH./He=O.5
^C 2 ^H 4. SiH ₄
= 50 SiH ₄ : C ₂ H ₄ = 3: 7 0.18 0.6 '0.5

Temperature of the Al support: 250 ° C

Discharge frequency: 13.56 MHz

Internal pressure of the amorphous layer (I) 0.4 mbar

Reaction chamber

Amorphous layer (II) 0.67 mbar

ω ο

to cn

to ο

Table 2 C

Layer structure First
layer
area Used
gas ) urch-
soot-
Schwin-
Jigkeit
(Standard
at / min) Flow rate
relationship Lntla-
i-
power
(W / cm ² ) Layer-
deposit
manure
Schwin-
age
(nm / s) layer
thickness
(around) Amorphous"
layer
(D. Second
layer
area SiH ₄ / He = 1
NO
B ₂ H ₆ / He = 10 " ³ SiH ₄
= 200 NOZSiH ₄ = I ₇ SxIO " ²
B ₂ H ₆ / SiH ₄
= 2.0xl0 ~ ⁴ * 2 _T 5xl0 " ⁵ 0.18 1.1 0.5 Amorphous layer
(ID SiH ₄ / He = 1
B ₂ H ₆ / He = 10 " ³ SiH ₄
= 200 B ₂ H ₆ / SiH ₄ = 2.5 x 10 " ⁵ 0.18 ' . 1.1 19.5 SiH ₄ / He = 0.5
^C 2 ^H 4 SiH ₄
= 50 SiH ₄ : C ₂ H ₄ = 3: 7 0.18 0.6 0.5

Al substrate temperature. Discharge frequency

Internal pressure of the
Re ac ti on sk amme r

250 ° C 13.56 MHz

Amorphous layer (Γ) 0.4 mbar

Amorphous layer (II) 0.6 7 mbar

OO

ro CD Ol O

GO "CO O CD

ro

Cu O

to cn

to ο

■ · cn

cn

Table 3 C

Layer structure First
layer
area Used
gas ) urch-
iluss-
wake up
validity
(Con-
3n / min) Flow rate
relationship Lntla-
i-
power
(W / cm ² ) Layer-
deposit
manure
schv. ^T in
age
(nmZs) layer
thickness
(pm) Amorphous
layer
(D. Second
layer
area SiH ₄ / He = 1
NO
B _o H _c / He = 10 " ³
ZO SiH ₄
= 200 . NOZSiH ₄ = I ₇ SxIO " ²
B ₂ H ₆ ZSiH ₄
= 1.5XlO " ⁴ ^ 7xl0" ⁵ 0.18 1.1 19.0 Amorphous layer
•. (ID SiH ₄ / He = 1
B ₂ H ₆ / He = 10 " ³ SiH ₄
= 200 B ₂ H ₆ ZSiH ₄
= 7xip ~ ⁵ * 6.5xlO ~ ⁵ ■ 0.18 ' 1.1 1.0 SiH ₄ ZHe = O ₇ S
^C 2 ^H 4 SiH ₄
= 50 SiH ₄ : C ₂ H ₄ = 3: 7 0.18 ' 0.6 0.5

Temperature of the Al support: 250 ° C. Discharge frequency: 13.56 MHz

Internal pressure of the reaction chamber

; Amorphous layer (I) 0.4 mbar. Amorphous layer (11) 0.67 mbar

CO CO

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ro ί

co · cn O, «

33092

DE 2850

Table 4C

Sample no.

C4-1

C4-2

C4-3

C4-4 C4-5

C4-6

distribution
as in

Fig. 16

Fig.17

Fig. 18

Fig. 19 Fig. 20

Fig. 21

valuation

minor occurrence of defective images; high image quality

minor occurrence of defective images; very good adhesion

- 90 Table 5C

DE 2850

Sample no.

C5-1

C5-2

C5-3

C5-4

C5-5

C5-6

C5-7

Oxygen content
(Atom-%)

0.003

0.05

0.5

3.0

5.0

10.0

'Valuation
the image quality

© very good O -good

·· mm

33092

- 91 Table 6C

DE 2850

Sample no. C6-1 C6-2 C6-3 C6-4 C6-5 C6-6 C6-7 C6-8 Thickness of the
first
layer
area
(pm) 0.05 0.3 · '0.8 1.5 3 7th 10 valuation
de _r image
quality O © © © © O O O

© very good O- good

OI

Table 7C

Sample no. C7-1 C7-2 C7-3 C7-4 C7-5 C7-6 C7-7 C7-8 SiH ₄ : C ₂ H ₄
'Flow
speedy
relationship) 9: 1 6: 4 4: 6 2: 8 1: 9 0.5: 9.5 0.35: 9.65 0.2: 9.8 Si: C
(Salary
relationship) 9: 1 7: 3 5.5: 4.5 4: 6 3: 7 2: 8 1.2: 8.8 0.8: 9.2 Evaluation of the
picture quality Δ Q (2) (S) ® Δ

very good O good

sufficient for practical use

It'll be something flawed
Images generated

CD CD NJ

33092AC

DE 2850

Table 8C

Sample no. Thickness of the
amorphous layer
(II) '(Jim) Result C 8-1 0.001 Tendency to generate
faulty images C 8-2 0.02 no generation of errors
stick pictures at 20,000-
repeated repetition C 8-3 0.05 no generation of errors
stick pictures at 50,000-
repeated repetition C 8-4 2 stable at 200,000 times
or more repetitions

ω ο

to

Table 9 C.

cn

cn

Shift up
building First
layer
area Verv / ended
gas By-
soot-
Schwin-
littleness
(Standard
er / min Flow rate
employment relationship
) Discharge
power
(W / cm ² ) Shift away
divorce
speedy
speed
(nn / s) layer
thickness
(/in the) Cupid
phe
layer
(D Second
layer
area SiH ₄ / He = 1
SiF ₄ / He = 1
NO: ·
B _o H _c / He = 10 ^-3 ■ SiH ₄
= 100 NO / SiH ₄ = 1.5x10 ~ ²
B ₂ H ₆ / SiH ₄ / SiF ₄
= 2 _/ Oxl0 ~ ⁴ / O, 5 / 0.5
^ 0 / 0.5 / 0.5 0.18 1/1 0.5 SiH ₄ / He = 1
SiF./He=l ·. . ^SiH 4
= 100 SiH ₄ / SiF ₄ = 1 0.18 1.1 19.5

CD Ul O

CO OJ CD CD

co ο

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bo O

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Tabel

Xarch- Amorphous First SiH ₄ / He = I. Second SiH ₄ SiH ₄ / He = 1 SiH ₄ "»
SiF Flow rate
relationship : ntla-
Guys-
power Layer
deposit thickness
r manure,
schwin- ^(m) - 0.5 I. CO
CO jx. iluss-
Used _{; ο} ^ _
^Gas ability
(N9rm- layer
(D layer
area NO layer
area = 200 4th
= 150 (W / cm j age I. CD Layer structure JZU / HLLH / = 200 SiH / He = 0.5 SiH ₇ , +
Amorphous layer ⁴ Temperature of the Al support: 250 ° C (nm / s) CD
cn B ₂ H ₆ / He = 10 ^J (ID £ Charge frequency: 13.56 MHz NO / SiH = l, ² ~ 5xlO
fl 19.5 I. SiF ₄ / He = 0.5 C ₂ H ₄ η ir 1 1 BH _K / SiH = 2.0xl0 ~ ⁴ ^ 0
£ Ό fs υ, χ ο 0 _r 5 α
W. ro
00
cn , - - • 0.18 SiH ₄ / SiF ₄ / C ₂ H ₄ = 1.5 / 1.5 / 7 0.18 0.6 Internal pressure of the amorphous layer (I) 0.4 mbar Reaction chamber 'amorphous layer (II) 0.67 mbar

Oil

co ο

to 'cn

Oi

Table 2 D

Layer build-up

au (used

Layer-jSchichtabhi

jchic shit-J thick

cungsge

speed (nm / s)

First

Layer-ISiH, ZHe = I

area

NO

Amorphous
Seemed
(T)

B H./He=l(T 2,0xl0- ^{3 4} λ, 2,5XlO ^"5

SiH./He=I

Amorphous layer | ^siH 4 ^{/ He} = Ö75jsI _{H +}

SiH ₄ ZSiF ₄ ZC ₂ H

= 1/5 / 1.5 / 7

Temperature of the Al support: 250 ° C. Discharge frequency: 13.56 MHz. Internal pressure of the
Reaction chamber

. · Amorphous layer —h layer

to οι

Oi

Table 3 D

Layer structure First
layer
area Used
gas
j ) urch-
river
Schwin-
validity
(Standard
at / min) D. flow speed
relationship Sntla-
Guys-
power
(W / cm ² ) layer
discard
manure
Schwin-
age
(nm / s) layer
thickness
(pm) Amorphous
Schichi
(D Second
layer
area SiH / He = I.
NO
B _o H _c / He = 10 ^-3 SiH ₄
= 200 NO / SiH ₄ = 1.5xl0 "" ²
B ₂ H ₆ ZSiH ₄
. = 1.5 x 10 " ⁴ ~ 7 x 10 ~ ⁵ 0.18 19.0 Amorphous layer
(ID SiH ₄ / He = 1
B ₂ H ₆ / He = 10 " ³ SiH ₄
= 200 B ₂ H ₆ ZSiH ₄
= 7xI0 " ⁵ ^ 6.5xl0" ⁵ 0.18 1.1 1.0 SiH ₄ / He = 0.5
SiF ₄ / He = 0.5
^C 2 ^H 4 SiH _{4 +}
SiF ₄
= 150 SiH ₄ ZSiF ₄ ZC ₂ H ₄
= 1.5 / 1.5 / 7 0.18 0.6 0.5

Temperature of the Al support: 250 ° C

Discharge frequency: 13.56 MHz

Internal pressure of: amorphous layer (I) 0.4 mbaf Reaction chamber amorphous layer (II) 0.67 mbar

no co cn O

GO GO CD-CO

Table 4D

DE 2850

Sample no.

D4-1

D4-2

D 4- 3

D4-4

D4-5

D4-6

Distribution as in

Fig. 16

Fig.17

Fig. 18

Fig. 19

Fig. 20

Fig. 21

valuation

© no faulty images; high image quality Q no defective images; very good adhesion

- 99 - DE 2850

Table 5D

Sample no.

D5-1 D5-2

D5-3

D5-4

D5-5

D5-6

D5-7

Oxygen content (atom%)

0.003 0.05

0.5

'1.0

3.0

5.0

1O ₇ O

"Assessment of the image quality

© very good O -good

- 100 Table 6D

DE 2850

Sample no. D 6-1 D6-2 D6-3 D6-4 D6-5 D6-6 D6-7 D6-8 Thickness of the
first
layer
area
(/at the) 0.05 0.3 • 0.8 1.5 3 7th 10 valuation
image
quality O ® •O O O

© very good O * good

NS

Table 7D

Sample no. D7-1 D7-2 D7-3 D7-4 ■ D7-5 D7-6 D7-7 D7-8 SiH ₄ ISiF ₄ .:
C ₂ H ₄ 5: 4: 1 3: 3.5: 3.5 2: 2: 6 1: 1: 8 0.6: 0.4: 9 0.2: 0.3:
9.5 0.2: 0.15
: 9.65 0.1: 0.1
: 9.8 Si: C
(Salary
relationship) 9: 1 7: 3 5.5: 4.5 4: 6 3: 7 2: 8 1.2: 8.8 0 »8: 9.2 valuation
the image ■
quality Δ O @ O Δ X

very good O good

Door the practical
Application sufficient

Somewhat incorrect α images are generated ■ ^M

INJ CO Ul O

Ca) CD CD

DE 2850

Table 8D

Sample no. Thickness of the
amorphous layer
(II) (um) Result D 8-1 0.001 Tendency to generate
faulty images D 8-2 0.02 no generation of errors
stick pictures at 20,000-
repeated repetition D 8-3- 0.05 stable at 50,000 times
or more repetitions D 8-4 1 stable at 200,000 times
or eleventh repetition

to

to O

cn

cn

Table 9 D

Shift up
building First
layer
area Used
gas ) urch-
iluss-
wake up
littleness
(Nor TCi-
: m / min Flow rate
benefit ratio
) Discharge
power
(W / cm ² ) Shift away
divorce
speedy
speed
(nm / s) layer
thickness
(pn) Cupid
phe
layer
(D Second
Layer-
Rich SiH./He=l
SiF./He=l
NO; ■
B ₂ H ₆ / He = 10 " ³ SiH ₄
= 100 NO / SiH ₄ = l _t 5xl0 ~ ²
B ₂ H ₆ / SiH ₄ / SiF ₄
= 2 _/ 0xl0 " ⁴ / 0.5 / 0.5
~ 0 / 0.5 / 0.5 0.18 1.1 : 0.5 SiH ₄ / He = 1
SiF ₄ / He = 1 SiH ₄
= 100 S.
SiH ₄ / SiF ₄ = 1 0.18 1.1 19.5

a · • · * ι

CO CO CD LD K)

Empty

BATH ORIGINAL

Claims (24)

Claims 1. A photoconductive recording element comprising a carrier for a photoconductive recording element and an amorphous layer showing photoconductivity and containing silicon atoms as a matrix, contains amorphous material, characterized in that the amorphous layer has a first layer area, which contains oxygen atoms as atoms involved in the structure, and a second layer area, which as Atoms involved in the structure Atoms of group III of the ■ Periodic Table, which in the direction of the layer thickness are continuously distributed and enriched on the carrier side, contains, wherein the first layer region exists inside in the support side part of the amorphous layer and has the following relationship is applicable: To ./ T - 1 '30 where To is the layer thickness of the first layer region and T is obtained by dividing To from the layer thickness subtracted from the amorphous layer. B / 13 Dresdner Bank (Munich) Account 3939644 Bayer Vereinsbank (Munich) Kf η Ron cm ι n «- · - · · ■ - 2 - DE 2850 2. Photo-sensitive recording element according to Claim 1, characterized in that the first layer area and the second layer area at least part of the area they form together, 5 have in common. 3. Photoconductive recording element after arrival. Claim 1, characterized in that the second layer area essentially covers the entire layer area 10 of the amorphous layer occupies. 4. Photoconductive recording element according to claim 1, characterized in that the first Layer area as the end layer area on the carrier 15 th of the amorphous layer is provided. 5. Photoconductive recording element according to claim 1, characterized in that the second Layer area as the end layer area on the carrier side 20 of the amorphous layer is provided. 6. The photoconductive recording element according to claim 1, characterized in that the amorphous Layer contains hydrogen atoms. 7. Photoconductive recording element according to claim 6, characterized in that the content of the hydrogen atoms in the amorphous layer 1 to 40 at%. 8. Photoconductive recording element according to Claim 1, characterized in that the amorphous layer contains halogen atoms. - 3 - DE 2850 9. Photoconductive recording element after Claim 8, characterized in that the content of halogen atoms in the amorphous layer is 1 to 40 Atom%. 10 '. Photoconductive recording element according to Claim 1, characterized in that the amorphous Layer contains hydrogen atoms and halogen atoms. 11. Photoconductive recording element according to claim 10, characterized in that the total content of hydrogen atoms and halogen atoms in the amorphous layer is 1 to 40 atom%. 12. Photoconductive recording element according to Claim 1, "characterized in that To is 50 µm or less. 13. Photoconductive recording element according to Claim 1, characterized in that T 0.5 / am ore is more. 14. Photoconductive recording element according to claim 1, characterized in that To 50 pm or 25 is less and T is 0.5 pm or more. 15. Photoconductive recording element according to Claim 1, characterized in that the content of the oxygen atoms in the first layer region is 0.001 Is 30 to 50 atomic%. 16. Photoconductive recording element according to claim 1, characterized in that the content of the atoms of group · III of the periodic table in the 4th
second layer area 0.01 to 5 χ 10 atomic ppm. - A - DE 2850 17. Photoconductive recording element according to Claim 1, characterized in .that the second layer area has the maximum value of the concentration of Atoms of group III of the periodic table (C) im ITl 3.x Has 5 end layer area on the carrier side. 18. Photoconductive recording element according to ^% uch 17, dadur
or more. Claim 17, characterized in that C 50 atomic ppm 19. Photoconductive recording element according to Claim 17, characterized in that C in the layer area within 5 pm from the end part on the carrier side in the second layer area 15 ^det 20. Photoconductive recording element according to claim 1, characterized in that on the photoconductivity showing amorphous layer an amorphous layer made up of a silicon atom and carbon atoms containing amorphous material is arranged. 21. Photoconductive recording element according to claim 20, characterized in that the carbon Amorphous material containing atoms also contains hydrogen atoms. 22. Photoconductive recording element according to Claim 20, characterized in that the amorphous material containing carbon atoms also contains halogen atoms contains. 23. Photoconductive recording element according to 35 · Claim 20, characterized in that the carbon atoms Amorphous material containing also contains hydrogen atoms and halogen atoms. · ^: ···· '- · 33G9240 - 5 - DE 2850 24. The photoconductive recording element according to claim 20, characterized in that the amorphous layer containing carbon atoms has a thickness of 0.003 to 30 μm .