DE102023122657A1 - Improved optical fiber with a self-aligning sensor element with NV centers and a small measuring volume and method for producing this optical fiber and its applications - Google Patents

Abstract

The invention relates to an optical waveguide (LWL) with a sensor element (SE), wherein the sensor element (SE) has a carrier material (TM) and wherein a large number of diamonds (DM) are embedded in the carrier material (TM) and wherein one or more or all diamonds (DM) of these diamonds (DM) have NV centers (NVZ) and/or other paramagnetic centers and wherein the NV centers (NVZ) of the sensor element (SE) and/or the other paramagnetic centers of the sensor element (SE) are at Irradiation with pump radiation (LB) emits at least one fluorescent radiation (FL). The invention is characterized in that the carrier material (TM) is a radiation-hardened carrier material (TM). This enables self-adjusting series production with a high Cpk value. For the devices constructed with it to function, it is necessary that the carrier material (TM) for radiation with a pump radiation wavelength (λpmp) of the pump radiation (LB), with which the NV centers (NVZ) and/or the other paramagnetic centers are pumped, is essentially transparent and that the carrier material (TM) is essentially transparent for radiation with a fluorescence wavelength (λfl) of the fluorescence radiation (LB) of the NV centers (NVZ) and / or the other paramagnetic centers.

Description

About the priorities

• DE 10 2022 005018.8 vom 24.08.2022,
• DE 10 2023 100 857.9 vom 16.01.2023,
• DE 10 2023 111 859.5 vom 07.05.2023,
• DE 10 2022 122 507.0 vom 06.09.2022,
• DE 10 2023 115 907.0 vom 19.06.2023
• DE 10 2023 121 634.1 vom 11.08.2023
• DE 10 2022 131 306.9 vom 26.11.2022

in Anspruch.The German patent application presented here takes the priorities of the following German patent applications

• DE 10 2022 005018.8 from August 24th, 2022,
• DE 10 2023 100 857.9 from January 16, 2023,
• DE 10 2023 111 859.5 from May 7th, 2023,
• DE 10 2022 122 507.0 from September 6th, 2022,
• DE 10 2023 115 907.0 from June 19, 2023
• DE 10 2023 121 634.1 from August 11, 2023
• DE 10 2022 131 306.9 from November 26th, 2022

claimed.

Field of invention

The invention is directed to a device for the highly spatially resolved measurement of magnetic fields using an optical waveguide with a sensor element that is self-adjusting relative to the optical waveguide with respect to a target placement. As applications, the document presented here discloses a use of the device for commutation of an electric motor and a sensor head for detecting material properties on the surface of a workpiece. The sensor element includes a plurality of diamonds that include NV centers or other paramagnetic centers. This variety of diamonds has different orientations to each other. In the case of a sensor head application, this large number of diamonds therefore have a different spatial orientation of the diamonds to the sensor head housing.

The invention relates to an optical waveguide (LWL) with a sensor element (SE), wherein the sensor element (SE) has a carrier material (TM) and wherein a large number of diamonds (DM) are embedded in the carrier material (TM) and wherein one or more or all diamonds (DM) of these diamonds (DM) have NV centers (NVZ) and/or other paramagnetic centers and wherein the NV centers (NVZ) of the sensor element (SE) and/or the other paramagnetic centers of the sensor element (SE) are at Irradiation with pump radiation (LB) emits at least one fluorescent radiation (FL). The invention is characterized in that the carrier material (TM) is a radiation-hardened carrier material (TM). This enables self-adjusting series production with a high C _pk value. For the devices constructed with it to function, it is necessary that the carrier material (TM) for radiation with a pump radiation wavelength (λ _pmp ) of the pump radiation (LB), with which the NV centers (NVZ) and / or the other paramagnetic centers are pumped , is essentially transparent and that the carrier material (TM) is essentially transparent for radiation with a fluorescence wavelength (λ _fl ) of the fluorescence radiation (LB) of the NV centers (NVZ) and / or the other paramagnetic centers.

A method according to the invention for series production of such an advantageous optical waveguide (LWL) with a high C _pk value comprises the steps a) providing (140) an optical waveguide (LWL),
wherein the optical waveguide (LWL) has a first end and a second end; b) Providing (145) a liquid carrier material (TM) that can be hardened by means of electromagnetic radiation of a curing wavelength (λ _H ), wherein a large number of diamonds (DM) and / or crystals are embedded in the carrier material (TM) and wherein one or more or all diamonds (DM) of these diamonds (DM) and/or crystals have NV centers (NVZ) and/or other paramagnetic centers and wherein the NV centers (NVZ) of the carrier material (TM) and/or the other paramagnetic centers of the carrier material (TM) emit at least one fluorescent radiation (FL) when irradiated with pump radiation (LB) of a pump radiation wavelength (λ _pmp ); c) wetting (150) the first end of the optical waveguide (LWL), in particular to a wetting length LB or in a wetting area, with the carrier material (TM) which has the plurality of embedded diamonds (DM) and/or crystals; d) irradiating (155) the carrier material (TM) in the area of the first end (ELWL1) of the optical waveguide (LWL) with electromagnetic curing radiation, the wavelength of this electromagnetic radiation being the curing wavelength (λ _H ), so it is chosen that the carrier material (TM) at the first end (ELWL1) of the optical waveguide (LWL) at least partially hardens in the irradiated area and at least partially transforms into a solid; e) removing (160) the uncured carrier material (TM), in particular by means of a solvent, the remaining film of the carrier material (TM) forming the sensor element (SE) at the first end of the optical waveguide (LWL). A further embodiment of the method according to the invention includes a specification of the irradiation (155) of the carrier material (TM) in the area of the first end (ELWL1) of the optical waveguide (LWL) in the form of feeding (155) electromagnetic curing radiation into the second end of the optical waveguide (LWL) , whereby the wavelength of this electromagnetic radiation, the curing wavelength (λ _H ), is selected so that the carrier material (TM) hardens at the first end of the optical waveguide (LWL) and turns into a solid. This has the advantage that the curing of the carrier material (TM) at the first end (ELWL1) of the optical waveguide (LWL) to form a sensor element (SE) takes place in a self-adjusting manner only in the area of the light exit from the optical waveguide (LWL).

It has been shown that it is advantageous for later cleaning if, in a further embodiment of the method according to the invention, the carrier material (TM) only partially hardens when irradiated with the hardening radiation of the hardening wavelength (λ _H ).

For curing according to the method described above, relatively high photon energies are generally advantageous, depending on the carrier material (TM). In a further embodiment, the method according to the invention therefore provides that the radiation of the curing radiation fed in at the second end of the optical waveguide for curing is UV radiation with a curing wavelength (λ _H ) in the wavelength range from 1nm to 400nm.

• - mit dem Lichtwellenleiterkern (LWLC) am ersten Ende (ELWL1) des Lichtwellenleiters (LWL) und/oder
• - mit der einen oder den mehreren Clearances am ersten Ende (ELWL1) des Lichtwellenleiters (LWL), insbesondere durch das Verfahren selbstjustiert, optisch zusammenwirken,
• - wenn am zweiten Ende (ELWL2) des Lichtwellenleiters (LWL) optische Strahlung, insbesondere Pumpstrahlung (LB) mit der Pumpstrahlungswellenlänge (⍰pmp) eingespeist wird und/oder
• - wenn am ersten Ende (ELWL1) des Lichtwellenleiters (LWL) NV-Zentren (NVZ) innerhalb des Trägermaterials (TM) und/oder andere paramagnetische Zentren innerhalb des Trägermaterials (TM) eine Fluoreszenzstrahlung (FL) emittieren.

To improve the self-adjustment of the sensor element (SE) compared to the optical waveguide (LWL), it is advantageous according to the invention if the optical waveguide (LWL) provided has an optical waveguide core (LWLC) at least at the first end of the optical waveguide (LWL), among other things for this purpose and / or at least at the first end of the optical waveguide (LWL) is coated with an opaque layer which has one or more translucent openings, the so-called clearances, and these structures of the optical waveguide (LWL), the optical waveguide core (LWLC) and / or the clearances, limit the light exit of the curing radiation with the curing wavelength (λ _H ) at the first end (ELWL1) of the optical waveguide (LWL) to one or more exit areas and the process in the carrier material (TM) during curing by feeding in the curing radiation with the curing wavelength (λ _H ) at the second end (ELWL2) of the optical waveguide (LWL) one or more optical functional elements (LWLL) and / or one or more sensor elements (SE) at the first end (ELWL1) of the optical waveguide (LWL) in the area of the one or more exit areas and wherein the one or more optical functional elements (LWLL) formed by the method and/or the one or more sensor elements (SE) formed by the method are set up by the method in such a way that the one or more are thus formed the optical functional element (LWLL) formed by the method and/or the one or more sensor elements (SE) formed by the method

• - with the optical fiber core (LWLC) at the first end (ELWL1) of the optical fiber (LWL) and/or
• - optically interact with the one or more clearances at the first end (ELWL1) of the optical waveguide (LWL), in particular self-aligned by the method,
• - if optical radiation, in particular pump radiation (LB) with the pump radiation wavelength (⍰pmp) is fed into the second end (ELWL2) of the optical waveguide (LWL) and/or
• - if NV centers (NVZ) within the carrier material (TM) and/or other paramagnetic centers within the carrier material (TM) emit fluorescent radiation (FL) at the first end (ELWL1) of the optical waveguide (LWL).

According to the invention, it was recognized that for some application examples it makes sense if the optical waveguide (LWL) provided in the method is coated with one or more waveguides (1380, 1880, 2380, 6880, 6980), which in particular have clearances. These enable the sensor elements to be self-adjusted relative to these clearances and thus relative to the waveguide in the manufacturing process according to the invention.

The optical waveguide according to the invention corresponds to a method of use for this advantageous waveguide with very good Cpk values of the measured values that such optical waveguides provide in sensor systems. The method proposed according to the invention for determining a physical quantity comprises a) the provision of a previously described, advantageous optical waveguide (LWL) according to the invention,
wherein the optical waveguide (LWL) provided is coated with one or more waveguides (1380, 1880, 2380, 6880, 6980) which have clearances, and wherein in the clearances of the one or more waveguides or on the waveguide and / or in one or more sensor elements (SE) are located near the waveguide (1380, 1880, 2380, 6880, 6980) and b) feeding a microwave signal (µW) into one or more of the waveguides (1380, 1880, 2380, 6880, 6980) and feeding a pump radiation (LB) with the pump radiation wavelength (λ _pmp ) into the optical waveguide (LWL), in particular at the second end (ELWL2) of the optical waveguide (LWL), or irradiating the sensor element (SE) of the optical waveguide (LWL). a pump radiation (LB) with the pump radiation wavelength (λ _pmp ) and c)

Detecting an intensity value of the fluorescence radiation (FL) of the NV centers (NVZ) of the sensor element (SE) and/or the other paramagnetic centers of the sensor element (SE) and d) determining at least one measured value for a physical quantity from this intensity value and if necessary .other values.

Another method of use according to the invention includes a) providing an advantageous optical waveguide (LWL) according to the invention and b) feeding a pump radiation (LB) with the pump radiation wavelength (λ _pmp ) into the optical waveguide (LWL), in particular at the second end (ELWL2) of the optical waveguide (LWL), or irradiating the sensor element (SE) of the optical waveguide (LWL) with a pump radiation (LB) with the pump radiation wavelength (λ _pmp ) and c) detecting an intensity value of the fluorescence radiation (FL) of the NV centers (NVZ) of the sensor element (SE) and/or the other paramagnetic centers of the sensor element (SE) and d) determining at least one measured value for a physical quantity from this intensity value and possibly further values.

As part of the development of the invention, it was recognized that the invention can be used to improve a magnetic field camera according to the invention. The magnetic field camera comprises a sensor element layer (5) as a sensor element (SE), wherein the sensor element (SE) has a carrier material (TM) and wherein a large number of diamonds (DM) are embedded in the carrier material (TM) and wherein one or more or all diamonds (DM) of these diamonds (DM) have NV centers (NVZ) and/or other paramagnetic centers and wherein the NV centers (NVZ) of the sensor element (SE) and/or the other paramagnetic centers of the sensor element (SE) are at Irradiation with pump radiation (LB) emits at least one fluorescent radiation (FL). The carrier material (TM) is preferably a radiation-hardened carrier material (TM), which enables production with good C _pk values. In order to function, it is necessary that the carrier material (TM) is essentially transparent for radiation with a pump radiation wavelength (λ _pmp ) of the pump radiation (LB) with which the NV centers (NVZ) and/or the other paramagnetic centers are pumped and that the carrier material (TM) is essentially transparent for radiation with a fluorescence wavelength (λ _fl ) of the fluorescence radiation (LB) of the NV centers (NVZ) and that the magnetic field camera is a fluorescence camera, in particular a light sensor array (1) and optics (7 ), for the spatially resolved recording of a fluorescence image of the fluorescence radiation (FL) of the NV centers (NVZ) and/or the other paramagnetic centers with at least 2x2 pixels.

According to the invention, in a special embodiment, the magnetic field camera is set up to generate a fluorescence image and to output the fluorescence image. The magnetic field camera includes a memory. In this embodiment, the magnetic field camera is set up to store or temporarily store the fluorescence image in this memory and/or keep it ready and/or output it from the memory and/or transmit it from the memory to a higher-level computer system.

In a further embodiment, the magnetic field camera is set up to execute a computer-implemented artificial intelligence program in order to generate and/or output digitized and/or binary measured values and/or classifications from the recorded fluorescence images of the magnetic field camera, in particular from fluorescence images in the memory of the magnetic field camera and/or to store it in a memory of the magnetic field camera and to keep it ready in the memory of the magnetic field camera and/or to output it and/or to transmit it to a higher-level computer system.

In a further embodiment, the magnetic field camera comprises a memory in which the program code of the computer-implemented artificial intelligence program is stored at least temporarily and a computer system of the magnetic field camera retrieves and executes the program code from this memory when the computer-implemented artificial intelligence program is executed. Dem ent speaks of an advantageous computer program product, wherein the computer program product comprises at least one storage medium and wherein the information of the program code of the computer-implemented artificial intelligence program is at least temporarily stored in the storage medium in a compressed and/or non-compressed and/or encrypted or non-encrypted manner, and wherein the Storage medium of the computer program product is set up to become part of the memory of the magnetic field camera, in which the program code of the computer-implemented program of artificial intelligence is stored at least temporarily, or at least part of its contents in the memory of the magnetic field camera, in which the program code of the computer-implemented program of the artificial intelligence is stored at least temporarily.

Another exemplary embodiment according to the invention relates to a motor control for a motor,
wherein the motor and/or the control of the motor comprises an optical fiber according to the invention and/or wherein the control of the motor comprises a magnetic field camera according to the invention and/or wherein the control of the motor is set up to use a computer program product according to the invention.

Associated with this is a method according to the invention for commutation of a motor with the steps a) of detecting the times of the zero crossings of the phase current of a motor phase of the motor by means of a method according to the invention and / or b) of detecting the times of the zero crossings of the amount of the magnetic flux density within the Air gap (LS) of the motor by means of a method according to the invention, wherein the sensor element (SE) is arranged in the air gap (LS) of the motor and / or in the stray field of the magnetic field in the air gap (LS) of the motor and c) controlling the commutation of the phase voltages the phase connections of the motor phase windings depending on the times of the zero crossings.

The high quality of the optical fibers (LWL9) according to the invention enables the series production of high-quality optical fiber production quantities, the optical fiber production quantity comprising several optical fibers (LWL) and the optical fiber (LWL) of the several optical fibers (LWL) being provided with a sensor element (SE) and wherein the sensor element (SE ) has a carrier material (TM) and wherein a large number of diamonds (DM) and / or crystals are embedded in the carrier material (TM) and wherein one or more or all diamonds (DM) of these diamonds (DM) and / or one or more Crystals of these crystals have NV centers (NVZ) and/or other paramagnetic centers and wherein the NV centers (NVZ) of the sensor element (SE) and/or the other paramagnetic centers of the sensor element (SE) upon irradiation with pump radiation (LB) are one Pump radiation wavelength (λ _pmp ) of a predetermined pump radiation intensity emit at least one fluorescent radiation (FL) via the optical waveguide (LWL). The optical waveguide production quantity according to the invention is characterized in that this optical waveguide production quantity of these optical waveguides (LWL) comprises 10 or more optical waveguides (LWL) and that the relevant tolerance window here is the intensity of the fluorescent radiation (FL) of said fluorescence radiation when irradiated with pump radiation (LB) of a pump radiation wavelength (λ _pmp ) a predetermined pump radiation intensity via the optical fiber (LWL) 10% of the mean value of the measured intensities of the fluorescence radiation (FL) of the various optical fibers of the optical fiber production quantity during said irradiation of the sensor element (SE) with pump radiation (LB) of the pump radiation wavelength (λ _pmp ) of the predetermined pump radiation intensity is, the irradiation being the irradiation for the measurement of the respective optical fiber (LWL) via the respective optical fiber (LWL), and that the C _pk value of these measured intensities of the fluorescence radiation (FL) of the various optical fibers (LWL) of the optical fiber production quantity at the said irradiation of the sensor element (SE) with pump radiation (LB) of the pump radiation wavelength (λ _pmp ) of the predetermined pump radiation intensity based on the said relevant tolerance window a C _pk value higher than C _pk =0.8 and / or better higher than C _pk =1 .0 and/or better than C _pk =1.2 and/or better than C _pk =1.4 and/or better than C _pk =1.66. These high C _pk values are essential for successful series production.

In an analogous manner, the document presented here describes a high-quality waveguide production quantity according to the invention, the waveguide production quantity comprising several waveguides (1380, 1880, 2380, 6880, 6980) and each waveguide (1380, 1880, 2380, 6880, 6980) being the waveguide (1380, 1880, 2380, 6880, 6980) is provided with a sensor element (SE) and wherein the respective sensor element (SE) has a carrier material (TM) and wherein a large number of diamonds (DM) and / or crystals are embedded in the respective carrier material (TM). are embedded and
wherein one or more or all diamonds (DM) of these diamonds (DM) and / or one or more crystals of this crystal have NV centers (NVZ) and / or other paramagnetic centers and where the NV centers (NVZ) of the sensor element (SE) and/or the other paramagnetic centers of the sensor element (SE) emit at least one fluorescent radiation (FL) when irradiated with pump radiation (LB) of a pump radiation wavelength (λ _pmp ) of a predetermined pump radiation intensity. The waveguide production quantity according to the invention is characterized in that this waveguide production quantity of these waveguides (1380, 1880, 2380, 6880, 6980) comprises 10 or more waveguides (1380, 1880, 2380, 6880, 6980) and that the relevant tolerance window for the intensity of the fluorescence radiation ( FL) of said upon irradiation with pump radiation (LB) of a pump radiation wavelength (λ _pmp ) of a predetermined pump radiation intensity via an optical waveguide (LWL) or over a light transmission path that is the same for each waveguide, 10% of the mean value of the measured intensities of the fluorescence radiation (FL) of the various waveguides ( 1380, 1880, 2380, 6880, 6980) of the waveguide production quantity during said irradiation of the sensor element (SE) with pump radiation (LB) of the pump radiation wavelength (λ _pmp ) of the predetermined pump radiation intensity, the irradiation for the measurement of the respective waveguide being over each waveguide the optical waveguide (LWL) or via the same light transmission path for each waveguide and that the C _pk value of these measured intensities of the fluorescence radiation (FL) of the various waveguides of the waveguide production quantity occurs during the said irradiation of the sensor element (SE) with pump radiation (LB) of the pump radiation wavelength (λ _pmp ) of the predetermined pump radiation intensity based on the said relevant tolerance window has a C _pk value higher than C _pk =0.8 and/or better higher than C _pk =1.0 and/or better higher than C _pk =1.2 and/or better higher than C _pk =1.4 and/or better higher than C _pk =1.66. These high C _pk values are essential for successful series production.

State of the art

From the DE 10 2020 129 367 A1 a system is known in which it is intended to position the evaluation electronics of a similar system directly on the stator. In preparing the proposal presented here in this document, it was recognized that the technical teaching of the DE 10 2020 129 367 A1 is susceptible to EMC interference and causes a problem with galvanic isolation and temperature stress. The proposal presented here solves these problems.

From the DE 10 2020 109 477 A1 Methods for producing NV centers are known.

From the DE 10 2019 120 076 A1 , the DE 11 2020 003 569 A5 , the DE 11 2020 004 650 A5 , the DE 10 2021 101 565 A1 , the DE 10 2021 132 782 A1 and the EP 3 874 343 A2 Line-free devices for detecting magnetic fields are already known. They don't show any self-adjusting devices.

From the paper Ilja Fescenko, Andrey Jarmola, Igor Savukov, Pauli Kehayias, Janis Smits, Joshua Damron, Nathaniel Ristoff, Nazanin Mosavian and Victor M. Acosta “Diamond magnetometer enhanced by ferrite flux concentrators”, Phys. Rev. Research 2, 023394, 24 June 2020, DOI:https://doi.org/10.1103/PhysRevResearch.2.023394 the use of a dichroic mirror for the separation of pump radiation and fluorescence radiation is known.

From the document Georgios Chatzidrosos, Joseph Shaji Rebeirro, Huijie Zheng, Muhib Omar, Andreas Brenneis, Felix M. Stürner, Tino Fuchs, Thomas Buck, Robert Rölver, Tim Schneemann, Peter Blümler, Dmitry Budker, Arne Wickenbrock, “Fiberized Diamond-Based Vector Magnetometers” front. Photon., August 20, 2021, Sec. Quantum Optics, Volume 2 - 2021|https://doi.org/10.3389/fphot.2021.732748 and from the document Yuji Hatano, Jaewon Shin, Daisuke Nishitani, Haruki Iwatsuka, Yuta Masuyama, Hiroki Sugiyama, Makoto Ishii, Shinobu Onoda, Takeshi Ohshima, Keigo Arai, Takayuki Iwasaki, Mutsuko Hatano, “Simultaneous thermometry and magnetometry using a fiber-coupled quantum diamond sensor” Appl. Phys. Lett. 118, 034001 (2021) https://doi.org/10.1063/5.0031502 the transmission of pump radiation to excite NV centers of a single crystal using optical waveguides is known.

The website https://de.wikipedia.org/wiki/Lichtwellenleiter reveals further information about optical fibers.

All of these documents do not solve the problem of how the sensor element of the optical waveguide should be designed in order to have a stability that is suitable for the thermal requirements, for example for use in a motor or a sensor head. In the prior art processes, the diamonds are glued to the end of a glass fiber as an optical waveguide. This manufacturing step typically requires careful alignment of the diamonds to achieve good coupling. Also, all diamonds with NV centers should be treated in the same way with pump radiation of the pump radiation wavelength λ _pmp are irradiated during operation. Diamonds that are not sufficiently irradiated do not show the full contrast in terms of the dependence of the intensity of the fluorescence radiation of their paramagnetic centers, here the NV centers, on a surrounding magnetic field.

A key problem here is achieving a good C _pk value for the properties of the optical fiber, which is equipped with NV centers at one of its ends. In quantum sensor systems using microwaves and/or radio waves, waveguides such as microstrip lines, slot lines, tri-plate lines, differential microstrip lines and differential tri-plate lines and even more complex strip line systems are generally used. The waveguide region in which the NV centers and/or paramagnetic centers of crystals and/or diamonds of a sensor element interact with such a waveguide has a different permittivity ε during a defined irradiation with a pump radiation, which can also have the intensity value 0 of the carrier material of the sensor element in which these crystals and / or diamonds are embedded, and, due to the different permittivity ε of these crystals and / or these diamonds, a different characteristic impedance than the rest of the waveguide, which is not covered by the sensor element. A key problem here is achieving a good C _pk value for the characteristic impedance of the section of the waveguide that is covered by the sensor element. Only such good Cpk values ultimately enable series production with reliable, high-quality results and yields. These questions are still completely unaddressed in the state of the art. Despite research, no relevant literature could be found. The document presented here proposes a reworkable exemplary solution and applies it to various application examples.

The aforementioned writings do not solve this problem. Also, placing the NV centers properly requires highly qualified personnel, which are expensive and not always available.

A recurring problem is the detection of cracks and other defects in the surfaces of ferromagnetic workpieces. Corresponding measurement methods are known in the prior art. However, these only show insufficient spatial resolution to be able to detect small cracks.

The document presented here only provides brief bullet points on the principle of non-destructive material testing with regard to the state of the art.

When measuring workpieces using magnetic field measurement, the problems that arise when using Hall sensors/coils to measure stray magnetic fields/eddy current fields are that these measuring methods have a large measuring volume with a limited distance to the workpiece and a large measuring cross section. The corresponding devices are not diamagnetic and therefore change the measurement object, the magnetic field.

The method and device presented here are intended to remedy this.

From Scripture WO 2022 096 891 A1 a sensor is known that includes a magnet. According to the technical teaching of the WO 2022 096 891 A1 The magnet is arranged in such a way that it applies an inhomogeneous magnetic field to a specific volume. The sensor of the WO 2022 096 891 A1 further includes a magnetometer with an active element for detecting the magnetic field in a volume that includes the specific volume.

From Scripture CN 1 14 994 006 A An orthogonal crack detection system based on NV color center detection technology is known. The detection system of the CN 1 14 994 006 A includes an exciting end, a collecting end and a magnetization detection front end. The technical teaching of the CN 1 14 994 006 A uses the excitation end to generate excitation light, the excitation light acting on the front end of the magnetization sensor. The front end of the magnetization sensor includes a magnetization part and a detection part, the magnetization part being used for magnetizing a ferromagnetic object to be detected. The magnetization part of the device CN 1 14 994 006 A includes a magnetization interval. If a crack is positioned on the ferromagnetic object to be detected in the magnetization interval, the device can CN 1 14 994 006 A create a magnetic stray field at the crack. The detection part of the device CN 1 14 994 006 A produces voltage fluorescence under the effect of the excitation light and the stray magnetic field. The the detection part of the device CN 1 14 994 006 A is used to receive the voltage fluorescence and to analyze and process the voltage fluorescence zenz. The magnetization part of the CN 1 14 994 006 A includes two groups of electromagnets. The magnetization directions of the two groups of electromagnets of the device CN 1 14 994 006 A are orthogonal to each other. The sensor part of the device CN 1 14 994 006 A comprises an optical sensor fiber, an end part of the optical sensor fiber is a detection end, and diamond-shaped NV colorant particles attached to the fiber core are arranged on the end surface of the detection end.

• Schritt 1) Mischen der Lösung mit einer wässrigen Nano-Diamantpartikel-Lösung, die NV-Farbzentren enthält;
• Schritt 2) Auflösen der hergestellten Lösung, die mit den Nano-Diamantpartikeln, die die NV-Farbzentren enthalten, dotiert ist, mit Ultraschall durch ein Sol-Gel-Verfahren, Versiegeln und Stehenlassen der Lösung und vollständiges Hydrolysieren der Lösung, um Sol-Gel zu bilden; und
• 3) gleichmäßiges Auftragen des in Schritt 2) hergestellten Sol-Gels auf die Endfläche der optischen Faser, Halten der optischen Faser durch einen Schrittmotor, Kontaktieren der Endfläche der optischen Faser mit dem Sol-Gel, Ziehen der Endfläche der optischen Faser mit einer bestimmten Geschwindigkeit nach einer Zeitspanne, um einen halbkugelförmigen Gelfilm mit einer bestimmten Dicke und einer bestimmten Krümmung zu bilden, und Aushärten, um die hergestellte Quantensonde der optischen Faser zu erhalten. Laut der technischen Lehre der CN 1 12 146 782 A kann die Dotierungskonzentration der Nanodiamantteilchen, die NV-Farbzentren enthalten, gesteuert werden. Laut der technischen Lehre der CN 1 12 146 782 A sind die Nanodiamantteilchen gleichmäßig gemischt. Die Schrift CN 1 12 146 782 A gibt an, dass der Herstellungsprozess der Sonde einfach ist, seine Wiederholbarkeit ist hoch ist und dass eine Massenproduktion realisiert werden kann.

From Scripture CN 1 12 146 782 A a method for producing a fiber-optic quantum probe with controllable diamond particle doping is known. The procedure of CN 1 12 146 782 A includes the following steps:

• Step 1) Mix the solution with an aqueous nano-diamond particle solution containing NV color centers;
• Step 2) Dissolving the prepared solution doped with the nano-diamond particles containing the NV color centers with ultrasound by a sol-gel method, sealing and allowing the solution to stand, and completely hydrolyzing the solution to sol-gel to build; and
• 3) uniformly applying the sol-gel prepared in step 2) to the end face of the optical fiber, holding the optical fiber by a stepper motor, contacting the end face of the optical fiber with the sol-gel, pulling the end face of the optical fiber at a certain speed after a period of time to form a hemispherical gel film with a certain thickness and a certain curvature, and curing to obtain the manufactured optical fiber quantum probe. According to the technical teaching of the CN 1 12 146 782 A The doping concentration of the nanodiamond particles containing NV color centers can be controlled. According to the technical teaching of the CN 1 12 146 782 A the nanodiamond particles are evenly mixed. The font CN 1 12 146 782 A states that the manufacturing process of the probe is simple, its repeatability is high, and mass production can be realized.

From Scripture CN 1 14 720 553 A a device for detecting the leakage flux in a pipeline is known. The device of CN 1 14 720 553 A is based on an optical fiber that couples a diamond-nitrogen vacancy color center.

These documents also do not solve the problem of the necessary self-alignment of the material of the sensor element with the crystals that have the paramagnetic centers and/or NV centers relative to the optical waveguide.

Task

1. a) der notwendigen thermischen und galvanischen Trennung und
2. b) der Justage der Kristalle gegenüber dem Kern der Glasfaser bzw. dem Lichtwellenleiter und
3. c) eines geeigneten Verfahrens zur Herstellung eines geeigneten Lichtwellenleiters mit hohem Cpk-Wert in der Serienproduktion.

anzugeben.The proposal is therefore based on the task of finding a solution to the above problems

1. a) the necessary thermal and galvanic isolation and
2. b) the adjustment of the crystals relative to the core of the glass fiber or the optical fiber and
3. c) a suitable process for producing a suitable optical fiber with a high Cpk value in series production.

to specify.

This task is solved by the independent claims. Further refinements are the subject of subclaims.

Solution to the task

• • die Vermessung eines Magnetfelds mittels eines Sensorkopfes (erstes Anwendungsbeispiel) und/oder
• • die Vermessung eines Magnetfelds in einem Motor (zweites Anwendungsbeispiel) und/oder
• • die Verwendung in einer Magnetfeldkamera als Sensorschicht 5 (drittes Anwendungsbeispiel) und/oder
• • die Verwendung in einem Wellenleiter insbesondere zusammen mit einer Magnetfeldkamera (viertes Anwendungsbeispiel) zur Vermessung physikalischer Größen, wie unbekannter Signalfrequenzen ω_nk und/oder Beträge magnetischer Flussdichten und/oder Stromwerte elektrischer Ströme in Leitungen (z.B. 1330) und/oder Temperaturen und/oder Spannungen und oder indirekt ermittelbarer Größen wie Drücken und/oder mechanischen Spannungen und oder Ortskoordinaten und/oder Geschwindigkeiten und/oder Beschleunigungen und/oder Gravitationsbeschleunigungen und/oder Rotationsgeschwindigkeiten und/oder Winkelpositionen und/oder Rotationsbeschleunigungen und/oder Schallsignalen und/oder Ultraschallsignalen und/oder Spektren.

Four exemplary applications of the proposed optical fiber LWL with a self-adjusting sensor element SE are

• • the measurement of a magnetic field using a sensor head (first application example) and/or
• • measuring a magnetic field in a motor (second application example) and/or
• • Use in a magnetic field camera as sensor layer 5 (third application example) and/or
• • Use in a waveguide, especially together with a magnetic field camera (fourth application example) for measuring physical quantities, such as unknown signal frequencies ω _nk and/or amounts of magnetic flux densities and/or current values of electrical currents in lines (e.g. 1330) and/or temperatures and/or voltages and/or indirectly determinable quantities such as pressures and/or mechanical stresses and/or location coordinates and/or speeds and/or accelerations and /or gravitational accelerations and/or rotational speeds and/or angular positions and/or rotational accelerations and/or sound signals and/or ultrasonic signals and/or spectra.

The uses of the proposed optical waveguide LWL with a self-adjusting sensor element SE are not limited to these application examples.

In the sense presented here, an optical waveguide LWL is typically a dielectric waveguide of any shape. The optical waveguide LWL can have one or more dielectric layers. In particular, the optical waveguide LWL can have an optical waveguide core LWLC as such a dielectric layer. Preferably, several dielectric layers of an optical waveguide LWL have different refractive indices and / or dielectric material constants ε of their material, so that a reflection occurs at the interfaces between these dielectric layers of the respective optical waveguide LWL.

In the following, the document presented here describes the application of the proposed optical fiber LWL with a self-adjusting sensor element SE in various application examples.

In particular, the present document describes as a first application example the use of the proposed optical waveguide LWL in a sensor head SK.

In particular, the present document describes as a second application example the use of the proposed optical fiber LWL in an electric motor, in particular for controlling the commutation of this motor. Since four-quadrant operation of the engine is intended to be included, the use of this engine as a generator of electrical energy is included in the term engine in the sense of the document presented here.

The document presented here proposes an optical waveguide LWL with a self-adjusting sensor element SE and a method for producing it for such and other applications of the proposed optical waveguide with a self-adjusting sensor element SE with similar measurement tasks.

The sensor element SE has a carrier material TM in which a large number of diamonds DM are embedded. One or more or all diamonds DM of these diamonds DM have one or more NV centers NVZ and/or one or more other paramagnetic centers. The NV centers NVZ of the sensor element SE and/or the other paramagnetic centers of the sensor element SE emit at least one fluorescent radiation FL when irradiated with pump radiation LB. The special feature of the optical waveguide proposed in the document presented here is that the carrier material TM is a carrier material TM hardened by means of electromagnetic radiation and that the carrier material TM, after curing, is susceptible to radiation with a pump radiation wavelength λ _pmp of the pump radiation LB, with which the NV centers NVZ and/or the other paramagnetic centers are pumped is essentially transparent. Essentially this means that the losses that will undoubtedly occur are still so low that the functionality of the application in question is still ensured. In the same way, the carrier material TM should be essentially transparent for radiation with a fluorescence wavelength λ _fl of the fluorescence radiation LB of the NV centers. Essentially this means that the losses that will undoubtedly occur are still so low that the functionality of the application in question is still ensured. By curing a previously liquid carrier agent TM, the production of such an optical waveguide LWL is particularly easy and reliable with a high C _pk value.

The document presented here proposes, as a first exemplary application, a device for detecting the magnetic flux density B in the vicinity of a fault in a ferromagnetic surface.

The document presented here proposes, as a second exemplary application, a device for detecting the magnetic flux density B in an air gap LS and/or in the stray field BSTR of the air gap LS of a motor.

• • dass der Sensorkopf NV-reichen Diamantstaub als Magnetfeldsensor verwendet und
• • dass Permanentmagnete oder -spulen (AC oder DC Magnetfelder) des Sensorkopfes ein magnetisches Prüffeld erzeugen, das in die Oberfläche des Werkstücks eindringt, und
• • dass das Diamantmaterial des Diamantstubs an einem Faserende eines Lichtwellenleiters das Sensorelement bildet und
• • dass der Sensorkopf eine rein optische Vermessung des Magnetfelds und damit der magnetischen Eigenschaften der Oberfläche des Werkstücks über den Lichtwellenleiter ermöglicht.

In the case of a sensor head of the proposed type according to the first application example, the problem is solved according to the proposal in that

• • that the sensor head uses NV-rich diamond dust as a magnetic field sensor and
• • that permanent magnets or coils (AC or DC magnetic fields) of the sensor head generate a magnetic test field that penetrates the surface of the workpiece, and
• • that the diamond material of the diamond stub forms the sensor element at a fiber end of an optical waveguide and
• • that the sensor head enables a purely optical measurement of the magnetic field and thus the magnetic properties of the surface of the workpiece via the optical fiber.

In a motor of the proposed type according to the second application example, the motor has a housing (GHR, GH).

Furthermore, the devices of the application examples of the technical teaching presented here, here the motor and the sensor head SK, each have a sensor element SE with a carrier means TM. A large number of diamonds DM are preferably embedded in the carrier medium TM. The carrier material TM preferably comprises glass and/or a hardened plastic and/or another optically transparent material. The carrier material TM fixes the diamonds DM and prevents repositioning of the diamonds DM. The carrier material TM is preferred after solidification in the manufacturing process for electromagnetic radiation with the pump radiation wavelength λ _pmp of the pump radiation LB for the paramagnetic centers and/or NV centers NVZ in the diamonds DM transparent to allow pumping of these paramagnetic centers and/or NV centers. After solidification in the manufacturing process for electromagnetic radiation with the fluorescence wavelength λ _fl of the fluorescence radiation FL of the paramagnetic centers and/or the NV centers NVZ in the diamonds DM, the carrier material TM is preferably transparent in the diamonds DM. One or more or all of these diamonds DM typically have paramagnetic centers and/or NV centers NVZ.

In the first application example, the magnetic flux density B acts on the paramagnetic centers and/or NV centers NVZ of the sensor element SE. In the second application example, the proposed motor preferably comprises a rotor and a stator. An air gap LS separates the rotor from the stator. The rotor is mounted so that it can rotate relative to the stator about an axis AX. The magnetic flux density B in the air gap LS and/or in the stray field BSTR of the air gap LS of the motor acts on the paramagnetic centers and/or NV centers NVZ. Typically, an increasing amount of the magnetic flux density B causes a reduction in the intensity of the fluorescent radiation FL.

In the first application example, the sensor head SK preferably has an optical waveguide LWL for the access of pump radiation LB from a pump radiation source PL to the sensor element SE.

In the second application example, the housing GH of the motor preferably has a first opening OF for the access of pump radiation LB from a pump radiation source PL to the sensor element SE

When using NV centers in diamond as paramagnetic centers of the sensor element SE, the pump radiation LB preferably has a pump radiation wavelength λ _pmp in a wavelength range of 400 nm to 700 nm wavelength and/or better 450 nm to 650 nm and/or better 500 nm to 550 nm and/or better 515 nm to 540 nm. A wavelength of 532 nm is clearly preferred as the pump radiation wavelength λ _pmp . In the case of NV centers in diamond or in diamonds, a laser diode from Osram of the type PLT5 520B is suitable, for example, as a pump radiation source PL1 with a 520 nm pump radiation wavelength λ _pmp . When irradiated with pump radiation LB of the above-described pump radiation wavelength λ _pmp , the NV centers NVZ of the sensor element SE typically emit fluorescence radiation FL with a typical fluorescence wavelength λ _fl of approximately 637 nm for NV centers. Other wavelengths can be achieved by plasmonic coupling with metallic nanocrystals in the carrier material TM. The optical properties of paramagnetic centers in the sensor element SE, here the NV centers NVZ, can be modified by combining the nanodiamonds or diamonds DM or crystals in the carrier material TM with metallic nanoparticles.

In the first application example, a second optical waveguide LWL preferably transports the fluorescent radiation FL of the sensor element SE to a photodetector PD
In the second application example, the housing GH of the motor preferably has a second opening OF for the exit of fluorescent radiation FL from the sensor element SE towards a photodetector PD.

The proposed device also preferably has a partial device, in particular a dichroic mirror F1, in order to separate the fluorescence radiation FL from the pump radiation LB, so that essentially only fluorescence radiation FL and, if possible, no pump radiation LB fall on the photodetector PD. This partial device in the form of a filter F1 or dichroic mirror allows the passage of radiation with the fluorescence wavelength λ _fl of the fluorescence radiation FL - for example 637 nm for NV centers NVZ with a phonon sideband of 637 nm to 850 nm - in the direction of the photodetector PD, while it Radiation with the pump radiation wavelength λ _pmp of the pump radiation LB of the pump radiation source PL and thus the modulated pump radiation LB does not pass or leads so that it does not hit or influence the photodetector PD. The photodetector PD converts the intensity signal of the fluorescence radiation FL into a receiver output signal S0.

In the first application example, the device evaluates the receiver output signal S0 to obtain information about the distortion of the magnetic field B of a permanent magnet PM due to cracks RI and/or depressions in the surface of a ferromagnetic material FM. In the first application example, the proposed device then has the advantage that the magnetic field of the cracks RI and/or depressions in the surface of a ferromagnetic material FM is not disturbed by supply lines, such as in magnetic field measurement with Hall sensors. Furthermore, the sensor element SE is completely diamagnetic. A reaction of the magnetic fields and/or interference fields on the evaluation electronics of the sensor system via the sensor element SE and the optical fiber LWL is very unlikely due to the galvanic isolation. This means that the system can also be used in high-voltage systems with device parts that are driven with very high voltages. Prior art systems do not show this.

In the second application example, the device evaluates the receiver output signal S0 in order to obtain information about the position of the magnetic field B in the motor or to obtain information that includes this information about the position of the magnetic field B in the motor. The proposed device in the second application example has the advantage that the magnetic field of the motor is not disturbed by supply lines, such as in magnetic field measurement with Hall sensors. Furthermore, the sensor element is completely diamagnetic. A reaction of the motor fields on the evaluation electronics of the sensor system via the sensor element and the fiber optic cable is very unlikely due to the galvanic isolation. This means that the system can also be used in high-voltage systems with motors that are driven at very high voltages. The system is also suitable for generators in power plants. Prior art systems do not show this. That's how it is from the DE 10 2020 129 367 A1 a system is known in which it is intended to position the evaluation electronics directly on the stator. In preparing the proposal presented here in this document, it was recognized that the technical teaching of the DE 10 2020 129 367 A1 is susceptible to EMC interference and causes a problem with galvanic isolation and temperature stress. The proposal presented here does not have these problems.

In a first variant in the second application example, paramagnetic centers and/or NV centers NVZ of the sensor element SE are preferably located not only in the stray field of the air gap, but in the air gap LS of the motor itself. This enables a better signal and more precise measured values with lower Disturbances.

In a second variant of the proposed device, the diamonds DM in the carrier material TM are oriented substantially differently from one another, each with a substantially different orientation. This has the essential and very massive manufacturing advantage that alignment of the diamonds DM is no longer necessary and the manufacturing process for producing the sensor element SE can use, for example, diamond powder with a very large number of very small diamonds DM. A sensor element SE with such a disordered multitude of diamonds DM has the advantage that the measurement of the magnetic flux density B is isotropic. This means that the sensor element SE only detects the amount of the magnetic flux density B, but not the direction.

In the first application example, this has the advantage that an alignment of the sensor element SE and the optical waveguide LWL and the sensor head SK is no longer necessary.

In the second application example, this has the advantage that alignment of the sensor element SE and the optical fiber LWL in the motor is no longer necessary.

The assembly of such a sensor element SE can be carried out by auxiliary staff or less precise mechanical devices, which in the first application example only have to insert the sensor element SE with the optical fiber LWL into the channel KN of the sensor head SK and in the second application example the sensor element SE with the optical fiber For example, you only have to plug the fiber optic cable into a designated opening OF on the motor.

This reduces the manufacturing costs for devices that use the proposed optical fiber LWL, such as the sensor head SK in the first application example and the motor in the second application example. In order to achieve spatial isotropy, it is therefore advantageous if the orientation of the diamonds DM is stochastically and essentially uniformly distributed.

In the course of developing the technical teaching of this document, the applicant recognized that, in accordance with the previous statements, it is also advantageous if, in the first application example, the sensor element SE is located in the stray field BSTR of the magnetic field of the permanent magnet PM. Instead of a permanent magnet, other field excitations are conceivable. For the purposes of the document presented here, these are included in the description “Permanent magnet PM”.

In the course of developing the technical teaching of this document, the applicant recognized that, in accordance with the previous statements, it is also advantageous if, in the second application example, the sensor element SE is located in the air gap LS or in the stray field BSTR of the air gap LS of the motor.

In order to minimize the number of optical fiber LWL and to keep the modifications to the device that uses the proposed optical fiber LWL, here for example the sensor head SK or the motor, low, it is advantageous to use a single optical fiber LWL for supplying the pump radiation LB Pump radiation source PL to the sensor element SE and for returning the fluorescence radiation FL from the sensor element SE to the photodetector PD.

In the case of a single optical fiber LWL, in the first application example of the sensor head SK, only a single channel KN is necessary for mounting the optical fiber LWL, so that the first channel KN is then identical to the second channel KN. The following text then refers to such a channel KN as a common channel KN.

In the case of a single optical fiber LWL, in the second application example of the motor, only a single opening OF is necessary for mounting the optical fiber LWL, so that the first opening OF is then identical to the second opening OF. The following text then refers to such an opening OF as a common opening OF.

Thus, the proposed device, here for example the sensor head SK and the motor, preferably comprises a sensor element SE with a plurality of diamonds DM with paramagnetic centers and/or NV centers NVZ in a carrier material TM and a first optical waveguide LWL on which the sensor element SE is attached, wherein the optical waveguide LWL transports the pump radiation LB of the pump radiation source PL to the sensor element SE, so that the pump radiation LB irradiates the sensor element SE and the paramagnetic centers and / or NV centers NVZ emit fluorescence radiation FL, which the optical waveguide LWL detects and in the direction transported back to the photodetector PD.

In the first application example of the sensor head SK, the optical waveguide LWL can be introduced parallel to the support surface AF of the sensor head SK, in which case the sensor element SE is preferably located in the stray field of the cracks RI and/or depressions in the surface of a ferromagnetic material FM. The optical waveguide LWL can also be introduced into the sensor head perpendicular to the support surface AF of the sensor head SK by means of a vertical channel and advanced into the vicinity of the support surface AF, so that the sensor element SE then detects the magnetic flux density B in the stray field of the cracks RI and / or depressions recorded in the surface of the ferromagnetic material FM. The sensor element SE can also be advanced up to the immediate vicinity of the support surface AF of the sensor head SK, but then the problem arises that the probability of damage during measuring operation of the sensor head SK increases due to a movement along the support surface AF of the sensor head SK.

In the second application example of the motor, the optical waveguide LWL can be introduced parallel to the axis AX of the motor, in which case the sensor element SE is preferably located in the stray field of the air gap LS. The optical waveguide LWL can also be inserted perpendicular to the axis of rotation AX by means of a hole in the laminated core of the stator between the grooves in which the rods of the stator coils SL are inserted and advanced up to the air gap, so that the sensor element SE then has the magnetic flux density B recorded in a stator coil SL. The sensor element SE can also be advanced into the air gap, but then the problem arises that the probability of damage during operation of the engine increases due to movement or vibration of movable components of the engine or different thermal expansion coefficients.

If the return of the fluorescence radiation FL from the sensor element SE to the photodetector PD is to be carried out separately from the return of the pump radiation LB to the sensor element SE, in this case the proposed device, here for example the sensor head SK or the motor, preferably comprises a second optical waveguide LWL , which detects fluorescence radiation FL of the sensor element SE, and transports the fluorescence radiation FL in the direction of the photodetector PD.

However, as stated above, the first optical waveguide LWL is preferably identical to the second optical waveguide LWL. The document presented here hereinafter refers to such an optical fiber LWL as a common optical fiber LWL. Such a common optical fiber LWL saves calibration effort and reduces assembly complexity and saves material and is therefore advantageous. In particular, the necessary modifications to the proposed device, here for example to the sensor head SK or m motor, are themselves reduced.

The first optical waveguide LWL has a first end and a second end.

The second optical waveguide LWL also has a first end and a second end. The common optical fiber LWL also has a first end and a second end.

The document presented here now proposes attaching the sensor element SE to the first end of the first optical fiber LWL and/or to the first end of the second optical fiber LWL and/or to the first end of the common optical fiber LWL in order to ensure the optical coupling between optical fibers To stabilize the fiber optic and sensor element SE.

If the first end of the first and/or the second or the common optical waveguide LWL is covered by the carrier material TM of the sensor element SE, this optical coupling is particularly well stabilized.

A first end surface EF1 of the first end of the first and/or the second or the common optical waveguide LWL preferably forms a first flat end surface EF1. A first end surface EF1 of the first end of the first and/or the second or the common optical waveguide LWL preferably forms a first flat end surface EF1 perpendicular to the center line ML of the optical waveguide LWL. The center line ML typically corresponds to the optical axis of the optical fiber LWL. The optical waveguide LWL can also have a shape. Such a flat first end surface EF1 enables improved coupling of the electromagnetic pump radiation LB from the optical waveguide LWL and improved optical coupling of the fluorescent radiation FL into the optical waveguide LWL. The distance of one or preferably several diamonds DM from this first flat end surface EF1 is preferably smaller than the pump radiation wavelength λ _pmp and/or better smaller than ½ of the pump radiation wavelength λ _pmp , and/or better smaller than 1/4 of the pump radiation wavelength λ _pmp , and/or or better smaller than 1/8 of the pump radiation wavelength λ _pmp , and/or better smaller than 1/10 of the pump radiation wavelength λ _pmp , and/or better smaller than 1/20 of the pump radiation wavelength λ _pmp , and/or better smaller than 1/50 of Pump radiation wavelength λ _pmp , and/or better smaller than 1/100 of the pump radiation wavelength λ _pmp , and/or better smaller than 1/200 of the pump radiation wavelength λ _pmp , and/or better smaller than 1/500 of the pump radiation wavelength λ _pmp , and/or preferably smaller than 1/1000 of the pump radiation wavelength λ _pm

The center line ML, which is an imaginary auxiliary construction to clarify the situation, pierces the first end surface EF1 at a center point MP of the first end surface EF1. In the case of an elongated optical waveguide LWL with an optical waveguide core LWLC, for example a glass fiber and/or a gradient glass fiber and/or a monomode glass fiber, the thickness dl of the carrier material TM is preferably thicker at this midpoint MP than the thickness dr at other points of the first end surface EF1 of the first end of the first and / or the second or the common optical fiber LWL. This has the advantage that light is reflected back through the carrier material TM/air interface into the optical fiber LWL and that the efficiency and efficiency then increases. This requirement can be met particularly easily by a self-adjusting sensor element SE. A manufacturing method for such a sensor element SE, as disclosed in the document presented here, typically meets this requirement in a particularly simple and cost-effective manner. Fulfillment of this requirement is in the case of an elongated optical fiber LWL with an optical fiber core LWLC, for example a glass fiber and/or a gradient glass fiber and/or a step index or gradient index fiber and/or a monomode glass fiber and/or an optical fiber based on a photonic crystal, ensure that, firstly, an optimal coupling of the pump radiation LB from the optical waveguide core LWLC of the optical waveguide LWL into the carrier material TM of the sensor element SE and thus into the crystals embedded in the carrier material TM, in particular the diamonds DM, in particular the diamond nano-crystals preferably have the paramagnetic centers and/or NV centers,

The carrier material TM therefore preferably forms a lens LWLL at the first end ELWL1 of a fibrous and/or cylindrical and elongated optical waveguide LWL. The diameter DLWLL of the lens LWLL is typically smaller than the diameter DLWL of such fibrous and/or cylindrical and elongated optical waveguide LWL. However, the diameter DLWLL of the lens LWLL can also be as large as the diameter DLWL of such a fibrous and/or cylindrical and elongated optical waveguide LWL, but according to the experience in developing the technical teaching of this document, this is not optimal.

Preferably, the first optical waveguide LWL is in the area of the application device, i.e. here, for example, in the case of the first application example in the area of the sensor head SK and/or within the sensor head SK and in the case of the second application example in the area of the motor and/or within the motor, entirely or partially covered by a mechanical cover MH. The mechanical sheath MH can have the purpose of mechanically protecting the first optical waveguide LWL and/or shielding from ambient light and/or shielding from external magnetic and/or electromagnetic fields. The mechanical shell MH can enclose the sensor element SE. This is particularly advantageous if the quantity to be detected is generated within the mechanical shell, for example in a microfluidic functional element.

Preferably, the second optical waveguide LWL is in the area in the area of the application device, i.e. here, for example, in the case of the first application example in the area of the sensor head SK and/or within the sensor head SK and in the case of the second application example in the area of the motor and/or within the motor, also completely or partially covered by a second mechanical shell MH. The second mechanical sheath MH can have the purpose of mechanically protecting the second optical waveguide LWL and/or shielding from ambient light and/or shielding from external magnetic and/or electromagnetic fields.

Preferably, the common optical waveguide LWL is in the area in the area of the application device, i.e. here, for example, in the case of the first application example in the area of the sensor head SK and/or within the sensor head SK and in the case of the second application example in the area of the motor and/or within the motor, completely or partially covered in the same way by a mechanical cover MH.

The mechanical sheath MH typically mechanically supports the respective optical fiber LWL. The mechanical sheath MH typically supports and protects the respective optical fiber LWL against the harsh conditions inside and outside the application device, i.e. here in the first application example of the sensor head SK and in the second application example of the motor.

The mechanical shell MH should generally meet special requirements with regard to thermal and chemical stability against heat and operating fluids in thermally and/or chemically stressful environments within the application device, for example in the first application example within the sensor head SK and in the second example within the motor. The mechanical shell MH is therefore preferably made of glass or ceramic or the like. Very particularly preferably, the mechanical shell comprises a mechanically flexible material, for example a fabric, for example a glass fabric.

The mechanical shell MH therefore preferably comprises a ceramic material or another non-magnetizable and/or electrically non-conductive material and/or a material which is stable at temperatures above 100°C and/or a material which is stable at temperatures above 140°C and/or a material stable at temperatures above 170 ° C and / or a material stable at temperatures above 200 ° C and / or a material stable at temperatures above 250 ° C or includes these or consists of these in extreme cases. As a result, the respective application device, here for example the sensor head in the first application example and the motor in the second application example, can also be used at high external and/or internal temperatures. In the case of the first application example of a sensor head SK, this can relate, for example, to a high temperature of the ferromagnetic material FM. The mechanical shell MH can therefore be made of a ceramic material or of another non-magnetizable and/or electrically non-conductive material and/or of a material which is stable at temperatures above 100°C and/or of a material which is stable at temperatures above 140°C and /or be made of a material that is stable at temperatures above 170°C and/or of a material that is stable at temperatures above 200°C and/or of a material that is stable at temperatures above 250°C.

Preferably, the mechanical sheath MH is at least partially a tube or tube or a capillary or a cannula into which the respective optical waveguide LWL can be pushed, for example. This simplifies the production of the system consisting of fiber optic cable LWL, sensor element SE and mechanical sleeve MH. The inner diameter Dro of such a tube or such a tube or such a capillary or such a cannula is preferably only a little larger than the diameter of the optical waveguide lens LWLL and the diameter DLWL of the optical waveguide LWL.

In order to minimize the access of external light to the sensor element SE during operation, it makes sense if the first gap between the edge of the access channel of the first optical waveguide LWL in the application device, in the first application example of a sensor head SK of the channel KN and in the second application example of a motor first opening OF, and the first optical waveguide LWL is completely or partially closed with an optically non-transparent filling material FM.

For the same reason, it makes sense if the second gap between the edge of the access channel of the second optical fiber LWL in the application device, in the first application example of a sensor head SK of the channel KN and in the second application example of a motor of the first opening OF, and the second optical fiber LWL is completely or partially closed with an optically non-transparent filling compound FM and/or if the common gap between the edge of the access channel of the common optical waveguide LWL in the application device, in the first application example of a sensor head SK of the channel KN and in the second application example of a motor of the first opening OF , and the common optical waveguide LWL is completely or partially closed with an optically essentially non-transparent filling material FM. The common filling compound FM can attach the respective optical waveguide to the housing of the application device, in the first application example of the sensor head SK and in the second application example of the motor.

The device is preferably set up to determine the time course of the intensity of the fluorescence radiation FL, in particular in the form of a receiver output signal S0. Furthermore, the device is preferably set up to obtain the time course of the amplitude value of the time course of the intensity of the fluorescence radiation FL from the time course of the intensity of the fluorescence radiation FL, in particular from the receiver output signal S0 and in particular by means of a lock-in amplifier LIV or a functionally equivalent one Partial device to determine.

Finally, the device is preferably set up to provide a display or other signaling depending on the determined time course of the amplitude value of the time course of the intensity of the fluorescence radiation FL in order to enable higher-level systems and/or a user to intervene depending on such a display or to enable signaling.

In the case of the second application example of a motor, the device is preferably set up to, depending on the determined time profile of the amplitude value of the time value profile of the intensity of the fluorescent radiation FL, the electrical current supply to coils of the motor, in particular to stator coils SL of the motor and / or to control the electrical current supply to rotor coils of the motor and in particular by means of a half-bridge control CTRH in cooperation with half-bridges HB. This makes it possible to modify the motor's magnetic field through cables, etc ren and to detect the magnetic field in the motor and control the motor without problems with the galvanic isolation.

In the case of the second application example of a motor, the motor typically has n motor phases (MPH _U , MPH _V , MPH _W ) with n as an integer positive number greater than 2. In the examples in the figures, the exemplary motor has n=3 motor phases. The device energizes each of these motor phases (MPH _H , MPH _V , MPH _W ) with an associated motor phase current (I _MPHU , I _MPHV , I _MPHW ) by means of half-bridges HB. Typically, the half-bridge control CTRH modulates the half-bridges HB with a respective pulse-modulated control signal, which it generates individually for each motor phase. These motor phase currents (I _MPHU , I _MPHV , I _MPHW ) are typically periodic at least over time with a period T. A current angle (φ _MPHU , φ _MPHV , φ _MPHW ) is preferably assigned to each of the motor phase currents (I _MPHU , I _MPHV , I _MPHW ). . The motor phase currents can always be arranged in the form of a sequence of motor phase currents (I _MPHU , I _MPHV , I _MPHW ) such that a preceding motor phase current differs in its respective current angle from the current angle of the subsequent motor phase current by 2π/n. Thus, each motor phase current is then assigned a motor phase current vector whose orientation corresponds to the current angle of the motor phase current and whose length corresponds to the amount of the motor phase current.

The proposed device is preferably set up, in particular by means of a high-pass filter or a functionally equivalent filter, to obtain an alternating component and/or a constant component of the time profile of the amplitude value of the time profile of the intensity of the fluorescent radiation FL from the time profile of the amplitude value of the time profile of the intensity of the fluorescent radiation FL to determine.

For example, in the second application example of a motor, it is only this alternating component and in particular its zero crossings that makes it possible to control the commutation of the current supply to the motor by means of a half bridge based on the intensity of the fluorescence radiation of the sensor element SE with the NV centers NVZ.

Preferably, the application device in the second application example of a motor is set up to determine, in particular by means of a second low-pass filter TP2, a low-frequency direct component in the time course of the amplitude value of the time course of the intensity of the fluorescence radiation FL. The device can use this direct component to monitor the sensor element SE and the optical path and detect deviations from expected values. For this purpose, the device compares the value of the constant component with an expected value interval. If the value of the constant component lies outside the expected value interval, the device preferably concludes that there is an error and triggers appropriate measures. One such measure can be, for example, that the half-bridge control CTRH transmits signaling to a higher-level computer system via an external data bus EXTDB, which then initiates everything else.

Preferably, the application device, in the second application example of a motor, has the half-bridge control CTRH, a computer core with a non-volatile memory, a typically volatile read/write memory, a reset circuit, a clock generator with a clock system, which in the second application example is used to supply a motor the half-back control with an operating cycle, a data bus interface to the external data bus EXTDB, an internal data bus for the data connection of these components and a power supply and, if necessary, other common processor components. In the second application example, the exemplary application device preferably has, for example, an interface for controlling the half bridges for controlling the motor. The power supply preferably also supplies the other device parts with electrical energy from a positive and a negative supply voltage line. The voltage supply preferably also provides the reference potential line GND.

Preferably, the computer core of the application device executes an application program whose program code is located in one of these memories of the application device. This application program can emulate parts of the signal processing components described here. This application program can, for example, emulate the high-pass filters and/or low-pass filters and/or synchronous demodulators and/or their functionally equivalent implementations described here.

The device is preferably set up to separate this low-frequency direct component in the time course of the amplitude value of the time course of the intensity of the fluorescent radiation FL from the time course of the amplitude value of the time course of the intensity of the fluorescent beam to separate the lung FL and thus determine the alternating component of the time course of the amplitude value of the time course of the intensity of the fluorescence radiation FL. In the case of the second application example of a motor, the application device can in this way provide a signal suitable for controlling the commutation of the half bridges in the exemplary application device in the second application example of a motor.

An exemplary application of the proposed optical fiber LWL of the first application example of a sensor head SK is the measurement of a magnetic field of a ferromagnetic material FM.

In the case of the second application example of a motor, the application device is therefore preferably set up to determine a zero crossing of the alternating component of the time profile of the amplitude value of the time value profile of the intensity of the fluorescence radiation FL. The detection of the zero crossing has the advantage that fluctuations in the amplitude of the signal etc. are irrelevant for the zero crossing. Such a signal is therefore more suitable for controlling the commutation of a motor.

Furthermore, in the case of the second application example of a motor, the application device is preferably set up to commutation the electrical current supply to coils of the motor, in particular, in a temporal connection with the determined zero crossing of the alternating component of the time course of the amplitude value of the time course of the intensity of the fluorescent radiation FL of stator coils SL of the motor and / or the electrical current supply of rotor coils of the motor and in particular by means of a half-bridge control CTRH in cooperation with half-bridges HB.

1. 1. einen oder mehrere Spannungswerte einer oder mehrerer Motorphasenspannungen (V_MPHU, V_MPHV, V_MPHW) einer oder mehrerer Motorphasen (MPH_H, MPH_V, MPH_W) der Motorphasen MPH gegen eine oder mehrere von dieser Motorphase verschiedenen Motorphasen (MPH_H, MPHv, MPHw) der Motorphasen MPH und/oder gegen ein Bezugspotenzial GND zu ermitteln, und/oder
2. 2. einen oder mehrere Stromwerte einer oder mehrerer Motorphasenströme (I_MPHU, I_MPHV, I_MPHW) einer oder mehrerer Motorphasen (MPH_H, MPHv, MPHw) der Motorphasen MPH zu ermitteln und/oder
3. 3. einen oder mehrere Summenstromwerte eines oder mehreres Summenströme mehrerer Motorphasenströme (I_MPHU, I_MPHV, I_MPHW) mehrerer Motorphasen (MPH_U, MPH_V, MPH_W) der Motorphasen MPH, insbesondere einen Sternpunktstrom von einem Sternpunkt von Spulen des Motors zu einem Referenzknoten oder einem Bezugspotenzialknoten GND,

zu ermitteln.Finally, in the case of the second application example of a motor, the application device is preferably set up to

1. 1. one or more voltage values of one or more motor phase voltages (V _MPHU , V _MPHV , V _MPHW ) of one or more motor phases (MPH _H , MPH _V , MPH _W ) of the motor phases MPH against one or more motor phases (MPH _H ) different from this motor phase, MPHv, MPHw) to determine the motor phases MPH and/or against a reference potential GND, and/or
2. 2. to determine one or more current values of one or more motor phase currents (I _MPHU , I _MPHV , I _MPHW ) of one or more motor phases (MPH _H , MPHv, MPHw) of the motor phases MPH and/or
3. 3. one or more total current values of one or more total currents of several motor phase currents (I _MPHU , I _MPHV , I _MPHW ) of several motor phases (MPH _U , MPH _V , MPH _W ) of the motor phases MPH, in particular a star point current from a star point of coils of the motor to one reference node or a reference potential node GND,

to determine.

As a result, in the case of the second application example of a motor, the application device is preferably set up to, on the one hand, determine information about the zero crossing of the alternating component of the time profile of the amplitude value of the time value profile of the intensity of the fluorescence radiation FL as the first control parameter.

1. 1. mit dem einen Spannungswert einer Motorphasenspannung der Motorphasenspannungen (V_MPHU, V_MPHV, V_MPHW) einer Motorphase der Motorphasen (MPH_H, MPH_V, MPH_W) und/oder
2. 2. mit mehreren Spannungswerten der mehreren Spannungswerte mehrerer Motorphasenspannungen (V_MPHU, V_MPHV, V_MPHW) mehrerer Motorphasen (MPH_H, MPH_V, MPH_W) und/oder
3. 3. mit dem einen Stromwert eines Motorphasenstroms der Motorphasenströme (I_MPHU, I_MPHV, I_MPHW) einer Motorphase der Motorphasen (MPH_H, MPH_V, MPH_W) und/oder
4. 4. mit mehrere Stromwerte der Stromwerte mehrerer Motorphasenströme der Motorphasenströme (I_MPHU, I_MPHV, I_MPHW) mehrerer Motorphasen der Motorphasen (MPH_U, MPH_V, MPH_W) und/oder
5. 5. mit dem einen Summenstromwert eines Summenstroms mehrerer Motorphasenströme der Motorphasenströme (I_MPHU, I_MPHV, I_MPHW) mehrerer Motorphasen der Motorphasen (MPH_U, MPH_V, MPH_W) und/oder
6. 6. mit mehreren Summenstromwerten mehrerer Summenströme der Summenströme mehrerer Motorphasenströme der Motorphasenströme (I_MPHU, I_MPHV, I_MPHW) mehrerer Motorphasen der Motorphasen (MPH_H, MPH_V, MPH_W)

als zweitem Regelparameter andererseits mit dem ersten Regelparameter zu kombinieren.Furthermore, in the case of the second application example of a motor, the application device is preferably set up to:

1. 1. with the one voltage value of a motor phase voltage of the motor phase voltages (V _MPHU , V _MPHV , V _MPHW ) of a motor phase of the motor phases (MPH _H , MPH _V , MPH _W ) and/or
2. 2. with multiple voltage values of the multiple voltage values of multiple motor phase voltages (V _MPHU , V _MPHV , V _MPHW ) of multiple motor phases (MPH _H , MPH _V , MPH _W ) and/or
3. 3. with the one current value of a motor phase current of the motor phase currents (I _MPHU , I _MPHV , I _MPHW ) of a motor phase of the motor phases (MPH _H , MPH _V , MPH _W ) and/or
4. 4. with several current values of the current values of several motor phase currents of the motor phase currents (I _MPHU , I _MPHV , I _MPHW ) of several motor phases of the motor phases (MPH _U , MPH _V , MPH _W ) and/or
5. 5. with the one total current value of a total current of several motor phase currents of the motor phase currents (I _MPHU , I _MPHV , I _MPHW ) of several motor phases of the motor phases (MPH _U , MPH _V , MPH _W ) and/or
6. 6. with several total current values of several total currents of the total currents of several motor phase currents of the motor phase currents (I _MPHU , I _MPHV , I _MPHW ) of several motor phases of the motor phases (MPH _H , MPH _V , MPH _W )

as a second control parameter on the other hand to combine with the first control parameter.

In the case of the second application example of a motor, the application device is preferably set up to determine the time of commutation of the energization of coils of the motor, in particular of stator coils SL and/or in particular of rotor coils of the motor, depending on the first control parameter and of such a second control parameter to change.

Preferably, in the case of the second application example of a motor, the application device is set up to use the first control parameter and the second control parameter to determine a position of the magnetic field with the flux density B in the air gap LS of the motor relative to one or more motor phase current vectors of the motor phase currents (I _MPHU , I _MPHV , I _MPHW ) and a spatial angle value of the angle between the position of the sensor element as a reference position on the one hand and the direction of one or more motor phase current vectors of the motor phase currents (I _MPHU , I _MPHV , I _MPHW ) at the time of the zero crossing of the alternating component on the other hand, to determine the time course of the amplitude value of the time course of the intensity of the fluorescence radiation FL.

In addition, sensor fusion makes sense here.

In the case of the second application example of a motor, the proposed application device preferably comprises a position sensor POS. The device is preferably set up to use this position sensor POS to determine position information POSS and to combine information about the zero crossing of the alternating component of the time profile of the amplitude value of the time value profile of the intensity of the fluorescence radiation FL as the first control parameter on the one hand with the position information as the second control parameter on the other hand . In this case, the application device of the second application example of a motor is preferably set up to determine the time of commutation of the current supply to coils of the motor, in particular stator coils SL and / or in particular rotor coils, depending on the first control parameter and on such to change the second control parameter, in particular to determine the position of the magnetic field B in the air gap LS relative to one or more motor phase current vectors of the motor phase currents (I _MPHU , I _MPHV , I _MPHW ).

In another variant, the application device of the second application example of a motor is preferably set up to use the first control parameter and the second control parameter to determine a position of the magnetic field with the flux density B in the air gap LS of the motor relative to the position of the rotor (GHR, PM, RMK ) close. In another variant, the application device of the second application example of a motor is preferably set up to then obtain a spatial angle value of the angle between the position of the sensor element as a reference position on the one hand and the spatial position of the rotor at the time of the zero crossing of the alternating component of the time course of the amplitude value on the other hand, to determine the time course of the intensity of the fluorescence radiation FL.

However, the applications of the technical teaching presented here are not limited to this. The document presented here proposes an optical fiber LWL with the sensor element SE for these and other applications with similar measurement tasks. The sensor element SE has a carrier material TM in which a large number of diamonds DM are embedded. One or more or all diamonds DM of these diamonds DM have one or more NV centers NVZ and/or one or more other paramagnetic centers. The NV centers NVZ of the sensor element SE and/or the other paramagnetic centers of the sensor element SE emit at least one fluorescent radiation FL when irradiated with pump radiation LB.

The special feature of the optical waveguide LWL proposed in the document presented here is that the carrier material TM is preferably a carrier material that has been hardened using electromagnetic radiation rial TM and that the carrier material TM after curing is essentially transparent to radiation with a pump radiation wavelength λ _pmp of the pump radiation LB, with which the NV centers NVZ and / or the other paramagnetic centers are pumped. Essentially this means that the losses that undoubtedly occur are still so low that the functionality of the device for the application in question is still ensured. In the same way, the carrier material TM should be essentially transparent for radiation with a fluorescence wavelength λ _fl of the fluorescence radiation LB of the NV centers NVZ or paramagnetic centers. Essentially this means that the losses that undoubtedly occur are still so low that the functionality of the device for the application in question is still ensured.

The document presented here proposes, as a first application example, a device for detecting the magnetic flux density B in a channel KN of a sensor head SK and/or in the stray field BSTR of a permanent magnet PM of the sensor head SK. The sensor head SK of the first application example preferably has a sensor element SE with a carrier means TM.

In accordance with the technical teaching of the document presented here, a large number of diamonds or nanodiamonds DM and/or crystals are preferably embedded in the carrier medium TM of a proposed sensor element SE. The carrier material TM preferably comprises glass and/or a hardened plastic. The carrier material TM fixes the diamonds DM and/or crystals relative to the first end ELWL1 of the optical waveguide LWL and prevents repositioning of the diamonds DM and/or crystals. After solidification in the manufacturing process, the carrier material TM is preferred for radiation with the pump radiation wavelength λ _pmp of the pump radiation LB and for radiation with the fluorescence wavelength λ _fl of the fluorescence radiation FL of the NV centers NVZ or paramagnetic centers in the diamonds DM or nanodiamonds and / or Crystals essentially transparent. One or more or all diamonds or nanodiamonds DM and/or crystals of these diamonds or nanodiamonds DM and/or crystals typically have NV centers NVZ and/or paramagnetic centers.

In an exemplary variant of the application device of the first application example of a sensor head SK, the magnetic flux density B in the stray field BSTR of the magnetic field of the exemplary permanent magnet PM acts on the NV centers NVZ or the paramagnetic centers in the sensor element SE of the sensor head SK.

Typically, the magnetic flux density B, which penetrates the carrier material TM of the sensor head with the paramagnetic centers and/or NV centers NVZ, causes a reduction in the intensity of the fluorescence radiation FL of the NV centers NVZ or paramagnetic centers in the sensor element SE.

In an exemplary variant of the application device of the first application example of a sensor head SK, the sensor head housing GH preferably has a first channel KN for supplying pump radiation LB from the pump radiation source PL to the sensor element SE via an optical waveguide LWL or via a similar optical system.

In an exemplary variant of the application device of the second application example of a motor, the housing GH of the motor preferably has a first opening OF for the supply of pump radiation LB from the pump radiation source PL to the sensor element SE via an optical waveguide LWL or via a similar optical system.

In the case of NV centers in diamond as paramagnetic centers within the carrier material TM of the sensor element SE, the pump radiation LB preferably has a pump radiation wavelength λ _pmp in a wavelength range of 400 nm to 700 nm wavelength and/or better 450 nm to 650 nm and/or better 500 nm to 550 nm and/or better 515 nm to 540 nm. A wavelength of 532 nm is clearly preferred as the pump radiation wavelength λ _pmp . In the case of NV centers in diamond or in diamonds as paramagnetic centers within the carrier material TM of the sensor element SE, a laser diode from Osram of the type PLT5 520B is suitable, for example, as a pump radiation source PL with a 520 nm pump radiation wavelength λ _pmp . When irradiated with pump radiation LB of the above-described pump radiation wavelength λ _pmp , the NV centers NVZ of the sensor element SE then typically emit fluorescence radiation FL with a typical fluorescence wavelength λ _fl of approximately 637 nm for NV centers NVZ.

Other wavelengths can be achieved by plasmonic coupling with metallic nanocrystals additionally embedded in the carrier material TM in the carrier material TM. The optical properties The NV centers NVZ or paramagnetic centers in the sensor element SE can be modified by combining the nanodiamonds or diamonds DM in the carrier material TM of the sensor element SE with metallic nanoparticles.

In an exemplary variant of the application device of the first application example of a sensor head SK, the sensor head housing GH preferably has a second channel KN for the exit of fluorescent radiation FL from the sensor element SE towards a photodetector PD.

In an exemplary variant of the application device of the second application example of a motor, the housing GH of the motor preferably has a second channel KN for the exit of fluorescent radiation FL from the sensor element SE to a photodetector PD.

The proposed device also preferably has a partial device, in particular a dichroic mirror F1 and/or a filter F1, in order to separate the fluorescent radiation FL from the pump radiation LB, so that essentially only fluorescent radiation FL and, if possible, no pump radiation LB on the photodetector PD falls. This partial device in the form of a filter F1 or dichroic mirror preferably allows the passage of radiation with the fluorescence wavelength λ _{fl of} the fluorescence radiation FL - for example 637 nm for NV centers NVZ with a phonon sideband of 637 nm to 850 nm for NV centers NVZ - in the direction of the photodetector PD pass while it does not allow the radiation with the pump radiation wavelength λ _pmp of the pump radiation LB of the pump radiation source PL and thus the modulated pump radiation LB to pass or guides it so that it does not hit or influence the photodetector PD. The photodetector PD converts the intensity signal of the fluorescence radiation FL into a receiver output signal S0. The device evaluates the receiver output signal S0,

In the case of the application device of the first application example of a sensor head SK, the application device can evaluate the receiver output signal S0 in order to obtain information about the values of magnetic material parameters of the material on the surface OF of a workpiece and/or to obtain information that includes this information. Preferably, the material of the workpiece near the surface OF comprises a ferromagnetic material FMM.

In the case of the application device of the second application example of a motor, the application device can evaluate the receiver output signal S0 in order to obtain information about the rotor position and/or the actual position of the magnetic field in the air gap LS of the motor and/or the state of the motor and/or its control device and/or its mechanical load (i.e. the applied torque) and/or to obtain information that includes this information.

The proposed device has the advantage that the magnetic field in the application device, i.e. in the first application example the magnetic field of the permanent magnet PM and the ferromagnetic material FM of the workpiece and in the second application example the magnetic field in the air gap LS of the motor, through supply lines such as in the magnetic field measurement Hall sensors are not disturbed.

Furthermore, the sensor element SE is completely diamagnetic. A reaction of fields within the application device and/or from the environment of the application device on the evaluation electronics of the sensor system via the sensor element SE and the sensor head SK and the optical waveguide LWL is very unlikely because of the galvanic isolation.

In the case of an application device of the first application example of a sensor head SK, there is a reaction of fields within the sensor head SK and/or from the environment of the sensor head SK - for example the workpiece - on the evaluation electronics of the sensor system via the sensor element SE and the sensor head SK and the optical fiber LWL is very unlikely because of the galvanic isolation.

In the case of an application device of the second application example of a motor, there is a reaction from fields within the motor and/or from the environment of the motor - for example from rotor or stator voltages and currents - on the evaluation electronics of the sensor system via the sensor element SE and the sensor head SK and the fiber optic cable LWL is very unlikely due to the galvanic isolation.

This means that the system can also be used in application devices in high-voltage subdevices that have a very high electrical potential.

For example, the system in an application device of the first application example of a sensor head SK can also be used in high-voltage systems with workpieces that have a very high electrical potential.

For example, in an application device of the second application example of a motor, the system can also be used in high-voltage systems, motor components that have a very high electrical potential.

These are essential advantages of a proposed sensor element SE. The small size that can be achieved with simultaneous positioning precision is particularly advantageous.

It is also conceivable that the application device, for example the sensor head SK or the motor, and/or the environment of the application device, for example the workpiece or the environment of the motor, is very hot or very hot compared to the operating conditions of semiconductors are cold. A temperature range of 0°C to 80°C is possible. With appropriate design of the sensor head, the optical fiber LWL, the mechanical shell MH, the carrier material TM and the material of the sensor head housing GH, temperatures of up to 700 ° C and up to absolute zero are conceivable for the workpiece and the ferromagnetic material FM. Prior art systems do not show this

Preferably, NV centers NVZ or the paramagnetic centers of the sensor element SE are not in the stray field BSTR of the permanent magnet PM in the first application example of a sensor head SK and not in the stray field BSTR of the air gap LS in the second application example of a motor.

The diamonds or nanodiamonds DM and/or crystals in the carrier material TM are preferably oriented substantially differently from one another, each with a substantially different orientation. This has the advantage in terms of manufacturing technology that alignment of the diamonds or nanodiamonds DM and/or crystals is no longer necessary and the manufacturing process for producing the sensor element SE, for example, diamond powder and/or crystal powder with a very large number of very small diamonds or nanodiamonds DM and/or crystals can be used.

A sensor element SE with such a disordered multitude of diamonds or nanodiamonds DM and/or such a disordered multitude of crystals has the advantage that the measurement of the magnetic flux density B is isotropic.

This means that the sensor element SE only detects the amount of the magnetic flux density B, but not the direction. This has the advantage that it is no longer necessary to align the sensor element SE and the optical fiber LWL in the sensor head SK. The assembly of such a sensor element SE can be carried out by auxiliary staff or less precise mechanical devices, which only insert the sensor element SE with the optical waveguide LWL into a designated channel KN in the sensor head housing GH and fasten it there, for example by means of gluing or screwing. This drastically reduces the production costs for such a sensor head SK. The Cpk value of series production based on such a manufacturing process increases dramatically, which enables correspondingly low cost positions. In order to achieve spatial isotropy, it is therefore advantageous if the orientation of the diamonds or nanodiamonds DM and/or crystals is stochastically distributed essentially equally in the sensor element SE.

In the course of developing the technical teaching of this document, the applicant recognized that, in accordance with the previous statements, it can also be advantageous if the sensor element SE in certain special cases in the first application example of a sensor head SK in the stray field BSTR of the permanent magnet PM and in the second application example of one Motor is located in the stray field BSTR of the air gap LS.

In order to minimize the number of fiber optic cables and to keep the modifications to the application device low, here in the first application example on the sensor head SK and in the second application example of a motor on the motor, it is advantageous to use a single fiber optic cable for supplying the pump radiation LB to the pump radiation source PL to the sensor element SE and for returning the fluorescence radiation FL from the sensor element SE to the photodetector PD.

In this case, there is only a single channel KN or only a single opening OF in the application device, here in the sensor head SK in the first application example and one in the second application example Motor in the motor, for the assembly of the optical waveguide LWL in the housing GH of the application device, here in the first application example in the sensor head housing GH and in the second application example in the housing GH of the motor, necessary, so that the first channel KN with the second channel KN or the first opening OF and the second opening OF are identical. The following text then refers to such a channel KN as a common channel KN and such an opening OF as a common opening OF.

Thus, the proposed application device, in the first application example the proposed sensor head SK and in the second application example the motor, comprises a sensor element SE with a plurality of diamonds or nanodiamonds DM and / or crystals with NV centers NVZ and / or other paramagnetic centers in a carrier material TM and a first optical waveguide LWL, to which the sensor element SE is attached. The optical waveguide LWL transports the pump radiation LB of the pump radiation source PL to the sensor element SE, so that the pump radiation LB irradiates the sensor element SE and the NV centers NVZ or the paramagnetic centers of the sensor element SE emit fluorescence radiation FL. The optical waveguide LWL detects this fluorescent radiation FL and transports the fluorescent radiation FL back towards the photodetector PD.

The optical waveguide LWL can be introduced in the application device of the first application example of a sensor head SK parallel or perpendicular to the axis AX of the permanent magnet PM in the sensor head SK, in which case the sensor element SE is preferably located in the stray field BSTR of the permanent magnet PM.

The optical waveguide LWL can be introduced in the application device of the second application example of a motor parallel or perpendicular to the axis AX of the motor in the air gap LS of the motor, in which case the sensor element SE is then preferably located in the stray field BSTR in the air gap LS of the motor.

If the return of the fluorescence radiation FL from the sensor element SE to the photodetector PD is to be carried out separately from the return of the pump radiation LB to the sensor element SE, in this case the application device comprises, in the first application example of a sensor head SK, the sensor head SK, in the second application example of a motor, the motor, preferably a second optical waveguide LWL, which detects fluorescence radiation FL of the sensor element SE, and transports the fluorescence radiation FL in the direction of the photodetector PD.

However, as stated above, the first optical waveguide LWL is preferably identical to the second optical waveguide LWL. The document presented here hereinafter refers to such an optical fiber LWL as a common optical fiber LWL. Such a common optical fiber LWL saves calibration effort and reduces assembly complexity and saves material and is therefore advantageous.

In particular, a common optical fiber LWL reduces the necessary modifications to the application device, in the first application example of a sensor head SK on the sensor head SK in the second application example of a motor on the motor.

The first optical waveguide LWL has a first end ELWL1 and a second end ELWL2. The second optical waveguide LWL also has a first end ELWL1 and a second end ELWL2. The common optical waveguide LWL also has a first end ELWL1 and a second end ELWL2.

The document presented here now proposes to attach the sensor element SE to the first end ELWL1 of the first optical fiber LWL and / or second optical fiber LWL or the common optical fiber LWL in order to stabilize the optical coupling between the optical fiber LWL and sensor element SE.

An optical waveguide LWL within the meaning of this document can have the shape of a cylinder, in particular an elongated cylinder like that of a glass fiber, or a polyhedron or a parallelepiped or a cuboid or a prism or another geometric shape.

In the sense of the document presented here, the first end ELWL1 of an optical waveguide LWL comprises an end surface EF, which is a partial area of the outer surface of the optical waveguide LWL, from which the pump radiation LB emerges into the carrier material TM of the sensor element SE and/or into which the fluorescent radiation FL of the paramagnetic Centers and/or NV centers NVZ of the diamonds or nanodiamonds and/or crystals of the carrier material TM enter the optical waveguide LWL.

In the sense of the document presented here, the second end ELWL2 of an optical fiber LWL comprises an end surface EF, which is a partial surface of the outer surface of the optical fiber LWL, into which the pump radiation LB enters the optical fiber LWL and/or from which the fluorescent radiation FL of the paramagnetic centers and / or NV centers NVZ of the diamonds or nanodiamonds and / or crystals of the carrier material TM emerge again from the optical waveguide LWL.

The second end ELWL2 of an optical waveguide LWL and the first end ELWL1 of an optical waveguide LWL do not necessarily have to include end faces EF that are aligned plane-parallel to one another. Optical functional elements of the LWL optical fiber can redirect the light appropriately within the LWL optical fiber.

Such optical functional elements can include reflective outer surfaces of the optical waveguide and/or micro-optical functional elements such as microlenses and/or holographic structures, in particular reflective holographic structures and/or diffusers and/or digital-optical functional elements such as Fresnel lenses, etc. These optical and micro-optical functional elements are preferably located on partial surfaces of the optical waveguide LWL.

If, for example, the first end ELWL1 of the first and/or the second or the common optical waveguide LWL is covered by the carrier material TM of the sensor element SE, this optical coupling is particularly well stabilized.

In the case of an elongated optical waveguide, the end surface EF of the first end ELWL1 of the first and/or the second or the common optical waveguide LWL preferably forms a flat end surface EF perpendicular to the center line ML of the optical waveguide LWL. The center line ML typically corresponds to the optical axis of the optical fiber LWL.

Such a flat end surface EF in the case of an elongated optical waveguide enables improved coupling of the electromagnetic pump radiation LB from the optical waveguide LWL and improved optical coupling of the fluorescent radiation FL into the optical waveguide LWL. Preferably, the distance of one or preferably several diamonds or nanodiamonds DM and/or one or more crystals in the carrier material TM of the sensor element SE from this flat end surface EF is smaller than the pump radiation wavelength λ _pmp and/or better smaller than ½ of the pump radiation wavelength λ _pmp , and /or better smaller than 1/4 of the pump radiation wavelength λ _pmp , and/or better smaller than 1/8 of the pump radiation wavelength λ _pmp , and/or better smaller than 1/10 of the pump radiation wavelength λ _pmp , and/or better smaller than 1/20 the pump radiation wavelength λ _pmp , and/or better smaller than 1/50 of the pump radiation wavelength λ _pmp , and/or better smaller than 1/100 of the pump radiation wavelength λ _pmp , and/or better smaller than 1/200 of the pump radiation wavelength λ _pmp , and/ or better less than 1/500 of the pump radiation wavelength λ _pmp , and/or better less than 1/1000 of the pump radiation wavelength λ _pmp .

In the case of an elongated optical waveguide LWL, the center line ML, which is an imaginary auxiliary construction to clarify the situation, pierces the end surface EF at a center point MP of the end surface EF. In the case of an elongated optical waveguide LWL, the thickness d _l of the carrier material TM is preferably thicker at this center point MP than the thickness d _r at other points of the end surface EF of the first end of the first and/or the second or the common optical waveguide LWL. This has the advantage that in the case of an elongated optical fiber LWL, light is reflected back through the carrier material TM/air interface into the optical fiber LWL and that the efficiency and efficiency then increases.

In the case of an elongated optical waveguide LWL, the carrier material TM therefore preferably forms a lens LWLL at the first end ELWL1 of the optical waveguide LWL. In the case of an elongated optical fiber LWL, the diameter D _LWLL of the lens LWLL is typically smaller than the diameter D _LWL of the optical fiber LWL. The diameter D _LWLL of the lens LWLL can also be as large as the diameter D _LWL of the optical fiber LWL in the case of an elongated optical fiber LWL, but according to the experience in developing the technical teaching of this document, this is not optimal.

In the case of an elongated first optical waveguide LWL, the first optical waveguide LWL is preferably completely or partially encased by a mechanical sheath MH in the area of the sensor head SK and/or within the sensor head SK. In the case of an elongated second optical waveguide, this is preferred LWL the second optical waveguide LWL in the area of the application device, in the case of the first application example of the sensor head SK and in the case of the second application example of the motor, and / or within the application device also completely or partially covered by a mechanical sheath MH.

Preferably, the common optical waveguide LWL in the area of the application device, in the case of the first application example of the sensor head SK and in the case of the second application example of the motor, and/or within the application device is completely or partially encased in the same way by a mechanical sheath MH. The mechanical sheath MH supports and protects the respective optical fiber LWL against the harsh conditions of the respective measurement situation.

The mechanical shell MH within the application device, in the case of the first application example of the sensor head SK and in the case of the second application example of the motor, must meet the respective special requirements with regard to thermal and chemical stability against heat and operating fluids. In the case of an elongated, fibrous optical waveguide, the mechanical sheath MH is therefore preferably made of glass fabric or ceramic or plastic or the like.

The mechanical shell MH therefore preferably comprises a ceramic material or another non-magnetizable and/or electrically non-conductive material and/or a material which is stable at temperatures above 100°C and/or a material which is stable at temperatures above 140°C and/or a material stable at temperatures above 170 ° C and / or a material stable at temperatures above 200 ° C and / or a material stable at temperatures above 250 ° C or includes these or consists of these in extreme cases. The mechanical shell MH can therefore be made of a ceramic material or of another non-magnetizable and/or electrically non-conductive material and/or of a material which is stable at temperatures above 100°C and/or of a material which is stable at temperatures above 140°C and /or be made of or comprise a material that is stable at temperatures above 170 ° C and / or of a material that is stable at temperatures above 200 ° C and / or of a material that is stable at temperatures above 250 ° C.

In the case of a fibrous optical waveguide LWL, the mechanical sheath MH is preferably at least partially a tube or tube or a capillary or a cannula or a hose into which the respective optical waveguide LWL is pushed. This simplifies the production of the system consisting of fiber optic cable LWL, sensor element SE and mechanical sleeve MH. The inner diameter D _ro of such a tube or such a tube or such a capillary or such a cannula or such a hose is preferably only a little larger than the diameter of the optical waveguide lens LWLL and the diameter DLWL of the optical waveguide LWL.

In order to minimize the access of extraneous light to the sensor element SE during operation, it makes sense if the first gap between the edge of the first channel KN or the edge of the first opening OF and the first optical waveguide LWL in the case of a fiber-shaped first optical waveguide LWL with a optically intransparent filling compound is closed completely or partially or in sections. For the same reason, it makes sense if the second gap between the edge of the second channel KN or the edge of the second opening OF and the second optical waveguide LWL in the case of a fiber-shaped second optical waveguide LWL is completely or partially closed with an optically non-transparent filling compound or in sections and/or if the common gap between the edge of the common channel KN or the edge of the common opening OF and the common optical waveguide LWL in the case of a fibrous common optical waveguide LWL is closed completely or partially or in sections with an optically essentially non-transparent filling compound . The common filling compound can fasten the respective optical waveguide LWL in the respective channel KN and/or the respective opening OF of the housing of the application device, in the first application example of the sensor head housing GH and in the second application example of the housing GH of the motor.

The device is preferably set up to determine the time course of the intensity of the fluorescence radiation FL, in particular in the form of a receiver output signal S0. Furthermore, the device is preferably set up to obtain the time course of the amplitude value of the time course of the intensity of the fluorescence radiation FL from the time course of the intensity of the fluorescence radiation FL, in particular from the receiver output signal S0 and in particular by means of a lock-in amplifier LIV or a functionally equivalent one Partial device to determine.

The sensor element SE preferably has a carrier material TM in which a large number of diamonds or nanodiamonds DM and/or crystals are embedded. One or more or all diamonds or nanodiamonds DM of these diamonds DM and/or one or more crystals of these crystals have one or more NV centers NVZ and/or one or more other paramagnetic centers. The NV centers NVZ of the sensor element SE and/or the other paramagnetic centers of the sensor element SE emit at least one fluorescent radiation FL when irradiated with pump radiation LB.

The special feature of the optical waveguide LWL proposed in the document presented here is that the carrier material TM is preferably a carrier material TM hardened by means of electromagnetic radiation and that after curing the carrier material TM is suitable for radiation with a pump radiation wavelength λ _pmp of the pump radiation LB, with which the NV- Centers NVZ and/or the other paramagnetic centers are pumped, is essentially transparent. Essentially this means that the losses that will undoubtedly occur are still so low that the functionality of the application in question is still ensured. In the same way, the carrier material TM should be essentially transparent for radiation with a fluorescence wavelength λ _fl of the fluorescence radiation LB of the NV centers or the paramagnetic centers. Essentially this means that the losses that will undoubtedly occur are still so low that the functionality of the application in question is still ensured. By curing a previously liquid carrier agent TM, the production of such an optical waveguide LWL is particularly easy and reliable with a high C _pk value.

In a variant of the optical waveguide, the diamonds or nanodiamonds DM and/or crystals in the carrier material TM are oriented substantially differently from one another, each with a substantially different orientation. This has the advantage that the sensor element behaves isotropically and does not show a preferred direction. The mixture of different diamond crystals homogenizes the measurement results and improves the C _pk value.

For the same reason, it is advantageous if the orientation of the diamonds or nanodiamonds DM and/or crystals is stochastically and essentially uniformly distributed in the carrier material TM.

The optical waveguide LWL is preferably set up or intended to transport pump radiation LB from the pump radiation source PL to the sensor element SE, so that the pump radiation LB irradiates the sensor element SE with radiation of the pump radiation wavelength λ _pmp .

The optical waveguide LWL is preferably also set up or intended to detect fluorescent radiation FL of the sensor element SE and to transport the fluorescent radiation FL in the direction of a photodetector PD.

The proposed optical waveguide LWL again preferably has a first end ELWL1 and a second end ELWL2. The carrier material TM preferably forms the sensor element SE and attaches this sensor element SE to the first end ELWL1 of the optical waveguide LWL.

In the case of an elongated, in particular fibrous optical waveguide LWL, the carrier material TM of the sensor element SE preferably envelops the first end ELWL1 of the optical waveguide LWL. This improves the mechanical connection between the LWL optical fiber and the SE sensor element.

In the case of an elongated, in particular fiber-shaped optical waveguide LWL, an end surface EF of the first end ELWL1 of the optical waveguide LWL preferably forms a flat end surface EF perpendicular to the center line ML of the optical waveguide LWL. This improves the coupling of electromagnetic radiation from the core LWLC of the optical waveguide LWL into the sensor element SE and vice versa.

In the case of an elongated, in particular fiber-shaped optical waveguide LWL, the imaginary virtual center line ML of the optical waveguide LWL pierces the end surface EF of the optical waveguide LWL at the first end ELWL1 of the optical waveguide LWL at a center point MP of the end surface EF of the optical waveguide LWL. Preferably, the thickness d _l of the carrier material TM at this midpoint MP is thicker than the thickness d _r at other points of the end surface EF of the first end ELWL1 of the optical waveguide LWL. As a result, an optical functional element is formed at the first end ELWL1 of the optical waveguide LWL. This improves the coupling of electromagnetic radiation from the core LWLC of the optical waveguide LWL into the sensor element SE and vice versa.

Therefore, the carrier material TM preferably forms a lens LWLL at the first end ELWL1 of the optical waveguide LWL in the case of an elongated, in particular fibrous optical waveguide LWL, the diameter D _LWLL of which is preferably smaller than the diameter D _LWL of the optical waveguide LWL or as large as the diameter D _LWL of the fiber optic cable is LWL. This reduces the measuring volume of the sensor element and thus increases the spatial resolution of magnetic measurements. Thus, in the first application example of a sensor head SK, the method presented here can detect particularly small cracks RI in the surface OF of the material of the workpiece using the proposed device.

Preferably, in the case of an elongated, in particular fiber-shaped first optical waveguide LWL, the first optical waveguide LWL is completely or partially encased by a first mechanical sheath MH. The mechanical shell MH preferably comprises a ceramic material or another non-magnetizable and/or electrically non-conductive material and/or a material which is stable at temperatures above 100° C. and/or a material which is stable at temperatures above 140° C. and/or a material which is stable at temperatures above 140° C Material stable at temperatures above 170 ° C and / or a material stable at temperatures above 200 ° C and / or a material stable at temperatures above 250 ° C or has such a material. This protects the sensor element SE and the fiber optic cable LWL from damage. The mechanical shell MH is preferably made of a ceramic material or of another non-magnetizable and/or electrically non-conductive material and/or of a material which is stable at temperatures above 100°C and/or of a material which is stable at temperatures above 140°C and /or made of a material that is stable at temperatures above 170°C and/or of a material that is stable at temperatures above 200°C and/or made of a material that is stable at temperatures above 250°C.

For better processing and assembly, the mechanical sheath MH in the case of an elongated, in particular fibrous, optical waveguide LWL preferably comprises at least a section of a tube or tube or a capillary or a cannula or a tube, in particular a fabric tube.

The fluorescence radiation of the NV centers NVZ and/or the other paramagnetic centers in the diamonds or the nanodiamonds DM and/or the crystals of the carrier material TM and in particular the fluorescence wavelength λ _fl of their fluorescence radiation FL can be generated, for example, by means of plasmonic coupling through metallic nanoparticles, which are the Carrier material TM can also be added, modified. In this case, for example, the carrier material TM can have metallic nanoparticles with a diameter of less than 200 nm and/or less than 100 nm and/or less than 50 nm and/or less than 20 nm and/or less than 10 nm and/or less than 5 nm, which are then later solidified in the carrier material TM are stored. This improves applicability in special use cases.

The metallic nanoparticles then typically interact plasmonically with diamonds or nanodiamonds DM and/or crystals in the carrier material TM and then influence the fluorescence radiation FL of these diamond DM and/or crystals.

These metallic nanoparticles typically have gold and/or platinum and/or palladium and/or graphite and/or graphene and/or chromium and/or silicon and/or germanium and/or tin and/or sulfur and/or selenium and/or tellurium and/or magnesium and/or calcium and/or strontium and/or barium and/or titanium and/or zirconium and/or hafnium and/or chromium and/or molybdenum and/or tungsten and/or iron and/or ruthenium and/ or osmium and/or nickel and/or tin and/or cadmium and/or mercury and/or cerium and/or neodymium and/or samarium and/or gadolinium and/or dysprosium and/or erbium and/or ytterbium and/or thorium and/or proactinium and/or uranium and/or plutonium. The former are particularly preferred.

The metal atoms of the nanoparticles include one or more elements of the periodic table. Each of these elements occurs in different isotopes in nature with a respective natural isotope mixing ratio. Each isotope of an element has a natural proportion corresponding to the natural isotope mixing ratio of this element. With regard to these shares and the values, the document presented here refers to the German patent application DE 10 2020 125 178 A1 the applicant. These isotopes each have or do not have a nuclear magnetic moment μ depending on the isotope. For at least one element that the metallic nanoparticles have, the metallic nanoparticles preferably have an increased proportion in the isotope mixing ratio compared to the natural proportion of the isotope mixing ratio for at least one of the following isotopes: ¹² C, ¹⁴ C, ²⁸ Si, ³⁰ Si, ⁷⁰ Ge, ⁷² Ge, ⁷⁴ Ge, ⁷⁶ Ge, ¹¹² Zn ^{, 114} Zn, ^{116 Zn, 118} Zn, ¹²⁰ Zn, ¹²² Zn, ¹²⁴ Zn ¹⁶ O, ¹⁸ O, ³² S, ³⁴ S, ³⁶ S, ⁷⁴ Se, ⁷⁶ Se, ⁷⁸ Se, ⁸⁰ Se, ⁸² Se, ¹²⁰ Te, ¹²² Te, ¹²⁴ Te, ¹²⁶ Te, ¹²⁸ Te ¹³⁰ Te, ²⁴ Mg, ²⁶ Mg, ⁴⁰ Ca, ⁴² Ca, ⁴⁴ Ca, ⁴⁶ Ca, 48 Ca, ⁸⁴ Sr, ⁸⁶ Sr, ⁸⁸ Sr, ¹³⁰ Ba, ¹³² Ba, ¹³⁴ Ba, ¹³⁶ Ba, ¹³⁸ Ba, ⁴⁶ Ti ^{, 48 Ti} , ⁵⁰ Ti, ⁹⁰ Zr , ⁹⁰ Zr, ⁹² Zr, ⁹⁴ Zr, ⁹⁶ Zr, ¹⁷⁴ Hf, ¹⁷⁶ Hf, ¹⁷⁸ Hf, ⁵⁰ Cr, ⁵² Cr, ⁵³ Cr, ⁹² Mo, ⁹⁴ Mo, ⁹⁶ Mo, ⁹⁸ Mo, ¹⁰⁰ Mo, ¹⁸⁰ W, ¹⁸² W, ¹⁸⁴ W, ¹⁸⁶ W, ⁵⁴ Fe, ⁵⁶ Fe, ⁵⁸ Fe, ⁹⁶ Ru, ⁹⁸ Ru, ¹⁰⁰ Ru, ¹⁰² Ru, ¹⁰⁴ Ru, ¹⁸⁴ Os, ¹⁸⁶ Os, ¹⁸⁸ Os, ¹⁹⁰ Os, ¹⁹² Os ⁵⁸ Ni, ⁶⁰ Ni, ⁶² Ni, ⁶⁴ Ni ^{, 102} Pd, ¹⁰² Pd, ¹⁰⁴ Pd, 106 Pd, ¹⁰⁸ Pd, ¹¹⁰ Pd, ¹⁹⁰ Pt, ¹⁹² Pt, ¹⁹⁴ Pt, ¹⁹⁶ Pt, ¹⁹⁸ Pt ⁶⁴ Zn, ⁶⁶ Zn, ⁶⁸ Zn, ^{70 Zn _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _} Nd, ¹⁴⁶ Nd, ¹⁴⁸ Nd ^{, 150} Nd ¹⁴⁴ Sm, ¹⁴⁶ Sm, 148 Sm, ¹⁵⁰ Sm, ¹⁵² Sm, ¹⁵⁴ Sm, ¹⁵² Gd, ¹⁵⁴ Gd, ¹⁵⁶ Gd, ¹⁵⁸ Gd, ¹⁶⁰ Gd, ¹⁵⁶ Dy, ¹⁵⁸ Dy, ¹⁶⁰ Dy, ¹⁶² Dy, ¹⁶⁴ Dy, ¹⁶² Er, 164 Er, ¹⁶⁶ Er, ¹⁶⁸ Er, ¹⁷⁰ Er, ¹⁶⁸ Yb, ¹⁷⁰ Yb, ¹⁷² Yb ^{, 174} Yb, ¹⁷⁶ Yb, ²³² Th, ²³⁴ Pa, ²³⁴ U, ²³⁸ U, ²⁴⁴ Pu.

The optical fiber LWL can have an optical fiber core LWLC. In the carrier material TM, the carrier material TM preferably forms an optical functional element at the first end ELWL1 of the optical waveguide LWL. This again improves the said optical coupling between the optical fiber LWL and the carrier material TM. The optical functional element then interacts optically with the optical fiber core LWLC of the optical fiber LWL at the first end ELWL1 of the optical fiber LWL.

The optical functional element preferably has an optical waveguide lens LWLL, in particular in the form of a thickening of the carrier material TM in the area of the optical functional element.

• • Bereitstellen 140 eines Lichtwellenleiters LWL, wobei der Lichtwellenleiter LWL ein erstes Ende ELWL1 und ein zweites Ende ELWL2 aufweist wobei der Lichtwellenleiter LWL für elektromagnetische Strahlung der Pumpstrahlungswellenlänge λ_pmp der Pumpstrahlung LB und/oder für elektromagnetische Strahlung der Fluoreszenzstrahlungswellenlänge λ_fl der Fluoreszenzstrahlung LB und für elektromagnetische Strahlung einer Aushärtewellenlänge λ_H des Trägermaterials TM des Sensorelements SE transparent ist;
• • Bereitstellen 142 eines flüssigen und mittels elektromagnetischer Strahlung einer Aushärtewellenlänge λ_H härtbaren Trägermaterials TM, wobei in das Trägermaterial TM eine Vielzahl von Diamanten DM, vorzugsweise Nanodiamanten, und/oder Kristalle eingebettet sind und wobei einer oder mehrere oder alle Diamanten DM dieser Diamanten DM und/oder ein oder mehrere Kristalle dieser Kristalle NV-Zentren NVZ und/oder andere paramagnetischen Zentren aufweisen und wobei die NV-Zentren NVZ der Diamanten DM und/oder Kristalle des Trägermaterials TM und/oder die anderen paramagnetischen Zentren der Diamanten DM und/oder Kristalle des Trägermaterials TM bei Bestrahlung mit Pumpstrahlung LB zumindest eine Fluoreszenzstrahlung FL emittieren;
• • Benetzen 145 des ersten Endes des Lichtwellenleiters TM insbesondere auf eine Benetzungslänge L_B, mit dem Trägermaterial TM, das die Vielzahl eingebetteter Diamanten DM und/oder Kristalle aufweist;
• • ggf. Vorhärten 147 (Pre-Bake) des Sensorelements SE durch eine vorausgehende Temperaturbehandlung.
• • Einspeisen 150 elektromagnetischer Strahlung in das zweite Ende des Lichtwellenleiters LWL, wobei die Wellenlänge dieser elektromagnetischen Strahlung, die Aushärtewellenlänge λ_H, so gewählt ist, dass das Trägermaterial TM am zweiten Ende des Lichtwellenleiters LWL aushärtet und sich in einen Festkörper wandelt.
• • Entfernen 160 des nicht ausgehärteten Trägermaterials TM insbesondere mittels eines Lösungsmittels, wobei der verbleibende Film des Trägermaterials TM am ersten Ende des Lichtwellenleiters LWL das Sensorelement SE bildet.
• • ggf. Nachhärten 165 (Post-Bake) des Sensorelements SE durch eine nachfolgende Temperaturbehandlung.

The essence of the document presented here is that it also describes and discloses a method for producing an optical fiber LWL, as previously described and used. The proposed procedure includes the steps:

• • Providing 140 an optical waveguide LWL, the optical waveguide LWL having a first end ELWL1 and a second end ELWL2, the optical waveguide LWL for electromagnetic radiation of the pump radiation wavelength λ _pmp of the pump radiation LB and / or for electromagnetic radiation of the fluorescence radiation wavelength λ _fl of the fluorescence radiation LB and for electromagnetic radiation of a curing wavelength λ _H of the carrier material TM of the sensor element SE is transparent;
• • Providing 142 a liquid carrier material TM that can be hardened by means of electromagnetic radiation of a curing wavelength λ _H , wherein a large number of diamonds DM, preferably nanodiamonds, and/or crystals are embedded in the carrier material TM and wherein one or more or all diamonds DM of these diamonds DM and / or one or more crystals of these crystals have NV centers NVZ and / or other paramagnetic centers and wherein the NV centers NVZ of the diamonds DM and / or crystals of the carrier material TM and / or the other paramagnetic centers of the diamonds DM and / or crystals the carrier material TM emits at least one fluorescent radiation FL when irradiated with pump radiation LB;
• • Wetting 145 the first end of the optical waveguide TM, in particular to a wetting length L _B , with the carrier material TM, which has the plurality of embedded diamonds DM and / or crystals;
• • If necessary, pre-hardening 147 (pre-bake) of the sensor element SE by prior temperature treatment.
• • Feeding 150 electromagnetic radiation into the second end of the optical waveguide LWL, the wavelength of this electromagnetic radiation, the curing wavelength λ _H , being selected so that the carrier material TM hardens at the second end of the optical waveguide LWL and turns into a solid.
• • Removing 160 the uncured carrier material TM, in particular by means of a solvent, the remaining film of the carrier material TM forming the sensor element SE at the first end of the optical waveguide LWL.
• • If necessary, post-hardening 165 (post-bake) of the sensor element SE through a subsequent temperature treatment.

Typically, the carrier material TM only partially hardens, which enables the formation of the optical functional element.

The electromagnetic radiation with the curing wavelength λ _H has a penetration depth into the carrier material TM, so that the carrier material TM only hardens up to a thickness d _l of the carrier material and thus forms the optical functional element, which is only possible in the context of the development of the technical teaching of this document was recognized as a surprising and advantageous approach.

The radiation of the radiation fed into the second end ELWL2 of the optical waveguide LWL for curing is preferably UV radiation. Radiation for curing with a curing wavelength λ _H between 320-380nm is particularly preferred.

In certain applications, nanoparticles with a diameter of less than 200nm and/or less than 100nm and/or less than 50nm and/or less than 20nm and/or less than 10nm and/or less than 5nm can be added to the carrier material TM before providing it, so that they are incorporated into the carrier material TM stored after hardening. These are preferably metallic nanoparticles.

Such metallic nanoparticles interact with diamonds or nanodiamonds DM and/or crystals in the carrier material TM and can, for example, influence the fluorescence radiation FL of these diamonds or nanodiamonds DM and/or crystals.

The metallic nanoparticles include, for example, gold and/or platinum and/or palladium and/or graphite and/or graphene and/or chromium and/or silicon and/or germanium and/or tin and/or sulfur and/or selenium and/or tellurium and/or magnesium and/or calcium and/or strontium and/or barium and/or titanium and/or zirconium and/or hafnium and/or chromium and/or molybdenum and/or tungsten and/or iron and/or ruthenium and/ or osmium and/or nickel and/or tin and/or cadmium and/or mercury and/or cerium and/or neodymium and/or samarium and/or gadolinium and/or dysprosium and/or erbium and/or ytterbium and/or thorium and/or proactinium and/or uranium and/or plutonium and/or mixtures thereof.

The metal atoms of the nanoparticles naturally comprised one or more elements from the periodic table of elements. Each of these elements occurs in different isotopes in nature with a respective natural isotope mixing ratio. In nature, each isotope has a natural proportion corresponding to the natural isotope mixing ratio. These isotopes may or may not have a nuclear magnetic moment μ depending on the isotope. For at least one element that the metallic nanoparticles have, the metallic nanoparticles have an increased proportion in the isotope mixing ratio compared to the natural proportion of the isotope mixing ratio for at least one of the following isotopes: ¹² C, ¹⁴ C, ²⁸ Si, ³⁰ Si, ⁷⁰ Ge, ⁷² Ge, ⁷⁴ Ge, ⁷⁶ Ge, ¹¹² Zn, ¹¹⁴ Zn ^{, 116} Zn, 118 Zn, ¹²⁰ Zn, ¹²² Zn, ¹²⁴ Zn ¹⁶ O, ¹⁸ O, ³² S, ³⁴ S, ³⁶ S, ⁷⁴ Se, ⁷⁶ Se, ⁷⁸ Se, ⁸⁰ Se, ⁸² Se, ¹²⁰ Te, ¹²² Te, ¹²⁴ Te, ¹²⁶ Te, ¹²⁸ Te, ¹³⁰ Te, ²⁴ Mg, ²⁶ Mg, ⁴⁰ Ca, ⁴² Ca, ^{44 Ca, 46 Ca} , ⁴⁸ Ca, ⁸⁴ Sr, ⁸⁶ Sr, ⁸⁸ Sr, ¹³⁰ Ba, ¹³² Ba, ¹³⁴ Ba, ^{136 Ba, 138 Ba} , ⁴⁶ Ti, ⁴⁸ Ti, ⁵⁰ Ti, ⁹⁰ Zr, ⁹⁰ Zr, ⁹² Zr, ⁹⁴ Zr, ⁹⁶ Zr, ¹⁷⁴ Hf, ¹⁷⁶ Hf , ¹⁷⁸ Hf, ⁵⁰ Cr, ⁵² Cr, ⁵³ Cr, ^{92 Mo, 94 Mo} , ⁹⁶ Mo, ^{98 Mo, 100 Mo, 180 W, 182 W , 184 W} , ¹⁸⁶ W, ⁵⁴ Fe, ⁵⁶ Fe, ⁵⁸ Fe, ⁹⁶ Ru, ⁹⁸ Ru, ¹⁰⁰ Ru, ¹⁰² Ru, ¹⁰⁴ Ru, ¹⁸⁴ Os, ¹⁸⁶ Os, ¹⁸⁸ Os, ¹⁹⁰ Os, ¹⁹² Os ⁵⁸ Ni, ⁶⁰ Ni, ⁶² Ni, ⁶⁴ Ni, ¹⁰² Pd, ¹⁰² Pd, ¹⁰⁴ Pd, ¹⁰⁶ Pd, ¹⁰⁸ Pd, ¹¹⁰ Pd ^{, 190} Pt, ¹⁹² Pt, ¹⁹⁴ Pt, 196 Pt, ¹⁹⁸ Pt ⁶⁴ Zn, ⁶⁶ Zn, ⁶⁸ Zn, ⁷⁰ Zn, ¹⁰⁶ Cd, ¹⁰⁸ Cd, ¹¹⁰ Cd, ¹¹² Cd, ¹¹⁴ Cd, ¹¹⁶ Cd, ¹⁹⁶ Hg, ¹⁹⁸ Hg, ²⁰⁰ Hg, ²⁰² Hg, ²⁰⁴ Hg ¹³⁶ Ce, ¹³⁸ Ce, ¹⁴⁰ Ce, ¹⁴² Ce, ¹⁴² Nd, ¹⁴⁴ Nd, ¹⁴⁶ Nd, ¹⁴⁸ Nd, ¹⁵⁰ Nd, ¹⁴⁴ Sm, ¹⁴⁶ Sm, ¹⁴⁸ Sm, ¹⁵⁰ Sm, ¹⁵² Sm, ¹⁵⁴ Sm, ¹⁵² Gd, ¹⁵⁴ Gd, ¹⁵⁶ Gd, ¹⁵⁸ Gd, 160 Gd, ¹⁵⁶ Dy, ¹⁵⁸ Dy, ¹⁶⁰ Dy, ¹⁶² Dy, ¹⁶⁴ Dy, ¹⁶² Er, ^{164 Er, 166 Er} , ¹⁶⁸ Er, ¹⁷⁰ Er, ¹⁶⁸ Yb, ¹⁷⁰ Yb, ¹⁷² Yb, ¹⁷⁴ Yb, ¹⁷⁶ Yb, ²³² Th, ²³⁴ Pa, ²³⁴ U, ²³⁸ U, ²⁴⁴ Pu. For the purposes of this document, “increased” means that the proportion of the above isotopes in the isotope mixing ratio is increased by 50% or more.

The optical waveguide LWL preferably has an optical waveguide core LWLC in the case of a fibrous and/or elongated one. The proposed method preferably forms an optical functional element LWLL at the first end ELWL1 of the optical waveguide LWL in the carrier material TM during curing with radiation of the hardening wavelength λ _H , the radiation of the hardening wavelength λ _H being fed via the second end ELWL2 of the optical waveguide LWL and the carrier material TM is supplied.

The then shaped optical functional element LWL can then optically interact with the optical waveguide core LWLC at the first end ELWL1 of the optical waveguide LWL if optical radiation, in particular pump radiation LB with the pump radiation wavelength λ _pmp , is fed into the second end ELWL2 of the optical waveguide LWL.

The optical functional element then has an optical waveguide lens LWLL, in particular in the form of a thickening of the carrier material TM.

The document presented here suggests, for example, a clear, colorless, liquid photopolymer, for example the Norland optical adhesive 61, as a carrier material TM. Further information will be available at https://www.norlandprod.com/adhesives/noa%2061.html at the time of filing the document presented herein.

Norland Optical Adhesive 61 (“NOA 61”) is a clear, colorless, liquid photopolymer that cures under ultraviolet light. Because it is a one-component system with 100% solids content, it offers many advantages for bonding where the adhesive can be exposed to UV light. Using NOA 61 eliminates the need for premixing, drying or heat curing common with other adhesive systems. Curing time is short and depends on the thickness applied and the available UV light energy. It is particularly useful if the carrier meets TM Federal Specification MIL-A-3920 for optical adhesives. NOA 61 meets Federal Specification MIL-A-3920 for optical adhesives. The carrier material TM is intended to create the best possible optical connection to glass surfaces, metals, glass fibers and glass-filled plastics. NOA61 meets this requirement. It is particularly advantageous to use a carrier material TM, which is recommended for bonding lenses, prisms and mirrors for military, aerospace and commercial optics as well as for terminating and splicing optical fibers. NOA61 meets these requirements.

The carrier material TM is also said to be characterized by excellent clarity, low shrinkage and light flexibility. These properties are important to enable the user to produce high quality SE sensor elements and achieve long-term performance under varying aggressive environmental conditions.

NOA 61 cures with ultraviolet light, as desired for the carrier material TM, with the maximum absorption being in the range of 320-380 nanometers for the curing wavelength λ _H and the highest sensitivity being achieved at 365 nm. The recommended energy for complete cure is 3 joules/cm ² at these wavelengths. Curing is not inhibited by oxygen, so any areas in contact with air will cure to a non-sticky state when exposed to ultraviolet light.

For most optical applications, curing occurs in two steps. First there is a short, uniform exposure, the so-called pre-hardening. The curing time is long enough to solidify the joint and allow it to be moved without disturbing the alignment. This is followed by longer curing under UV light in order to achieve complete crosslinking and solvent resistance of the adhesive. Curing can be done in 10 seconds using a 100 watt mercury lamp at 6". If a longer time is required for alignment, it can be extended to a few minutes using a very low intensity light source. Final curing can be achieved using the 100-watt Watt mercury lamp can be achieved in 5 to 10 minutes.

Pre-curing allows the user to quickly align and fix the fiber optic cable if necessary and minimizes the number of holding devices required. After prefixing, excess adhesive can be wiped off with a cloth moistened with alcohol or acetone as an example solvent. The fiber optic cables should be checked at this point and the rejects separated into methylene chloride. The coated area of the sensor elements SE must be soaked in the solvent and usually dissolves overnight. The time required to dissolve the carrier material TM depends on the extent of curing and the size of the coating.

Once cured, NOA 61 exhibits very good adhesion and solvent resistance, but it has not yet achieved optimal adhesion to glass. This is achieved by aging over a period of around 1 week, during which a chemical bond forms between the glass and the adhesive. This optimal adhesion can also be achieved by aging at 50° C for 12 hours in a temperature cabinet.

NOA 61 can withstand temperatures from -15°C to 60°C before aging when used to coat the fiber optic cable LWL. After aging, it can withstand temperatures from -150°C to 125°C. As a coating on the surface of the optical fiber, NOA 61 can withstand 260°C for three hours and during reflow soldering. As a result, the sensor element SE can be used for measuring the magnetic flux density B up to these temperatures. The document presented here therefore suggests the use of a proposed optical fiber LWL at temperatures above 100 ° C and / or even above 110 ° C and / or even above 120 ° C and / or even above 130 ° C and / or even above 140°C and/or even above 150°C and/or even above 160°C and/or even above 170°C and/or even above 180°C and/or even above 190°C and/or even above 200°C and/or even above 210°C and/or even above 220°C and/or even above 230°C and/or even above 240°C and/or even above of 250°C and/or even above 260°C. NOA 61 is not suitable for higher temperatures. Other materials make sense here.

Typical properties of a carrier are a solids content of more than 80%, a viscosity at 25 ° C of more than 250 cps, a refractive index of the hardened carrier material TM of more than 1.2, an elongation at break of less than 50% or more than 25% depending on the application, an elastic modulus of less than (psi) 200,000, a tensile strength of more than (psi) 3,000 and a hardness of more than Shore D 60.

Typical properties of NOA 61 as an exemplary carrier are a solids content of 100%, a viscosity at 25 ° C of 300 cps, a refractive index of the cured polymer of 1.56, an elongation at break of 38%, a modulus of elasticity of (psi) 150,000 , a tensile strength of (psi) 3,000 and a hardness of Shore D 85.

Advantage

• • Das Sensorelement SE ist galvanisch von der Auswerteelektronik der jeweiligen Anwendungsschaltung getrennt
• • Das Sensorelement SE ist thermisch von der Auswerteelektronik der jeweiligen Anwendungsschaltung getrennt
• • Das Sensorelement SE und seine Leitung (Lichtwellenleiter LWL) sind Diamagnetisch und beeinflussen die Messung nicht.
• • Die Anwendungsvorrichtungen (beispielsweise Sensorkopf SK und Motor) sind unanfällig gegenüber elektrostatischen Störungen
• • Das Sensorelement SE kann ein kleines Messvolumen (Fibercore- Durchmesser 9µm bis 1000µm) aufweisen,
• • Die Dicke des Materials des Trägermaterials TM mit den Diamanten DM und/oder Nanodiamanten und/oder Kristallen mit den paramagnetischen Zentren und/oder NV-Zentren an dem ersten Ende des Lichtwellenleiters ist variabel
• • die mögliche Messfrequenz reicht von DC (OHz) bis in den MHz Bereich
• • Gleicher Sensor für DC / AC Magnetfeldanregung
• • Diamagnetischer Messkopf (Sensor beeinflusst Messung nicht)

The following advantages characterize the technical solution proposed in this document:

• • The sensor element SE is galvanically isolated from the evaluation electronics of the respective application circuit
• • The sensor element SE is thermally separated from the evaluation electronics of the respective application circuit
• • The sensor element SE and its cable (optical fiber optic cable) are diamagnetic and do not influence the measurement.
• • The application devices (e.g. sensor head SK and motor) are not susceptible to electrostatic interference
• • The sensor element SE can have a small measuring volume (fiber core diameter 9µm to 1000µm),
• • The thickness of the material of the carrier material TM with the diamonds DM and/or nanodiamonds and/or crystals with the paramagnetic centers and/or NV centers at the first end of the optical waveguide is variable
• • The possible measurement frequency ranges from DC (OHz) to the MHz range
• • Same sensor for DC / AC magnetic field excitation
• • Diamagnetic measuring head (sensor does not influence measurement)

Such a device, as described in the description above, allows, in the second application example of a motor, detection of the magnetic field in the air gap of a motor without disturbing this magnetic field, without causing EMC problems and without causing problems with non-existent galvanic isolation . The installation space of such a solution is extremely small. The solution is robust against thermal and chemical requirements. For example, it also works at 100°K and possibly down to 0°K.

Third application example magnetic field camera

The basic idea of the third application example described in this document is to detect the fluorescent light of a magnetic field-sensitive fluorescent layer as a sensor element SE using an optical fluorescent light camera as a spatially resolving photodetector PD. The document presented here proposes using diamond crystals as the fluorescent layer, preferably diamond nanocrystals in a carrier material as the material of the fluorescent layer. Instead of the diamond crystals, other crystals can also be used alternatively or additionally, which emit fluorescent radiation when irradiated with pump radiation. Unless expressly stated otherwise, the reader can read other crystals with functionally equivalent fluorescence properties when diamonds are mentioned and other paramagnetic centers with functionally equivalent fluorescence properties when NV centers are mentioned. The diamond nanocrystals are particularly preferably HDNV diamonds. In this context, the document presented here refers to the prior art document specified above. (E.g DE 10 2021 132 780 A1 )

In connection with the proposed magnetic field camera, the document presented here proposes, as a third exemplary embodiment, to irradiate the NV centers in the nanodiamonds of the fluorescence layer with pump radiation at a pump radiation wavelength. This irradiation of the nanodiamonds of the fluorescence layer with pump radiation stimulates the NV centers of the nanodiamonds of the fluorescence layer to emit fluorescence radiation with a fluorescence wavelength. The carrier material in which the nanodiamonds are embedded is preferably transparent to radiation of the pump radiation wavelength and to radiation of the fluorescence wavelength. The magnetic flux density B of the magnetic field to be measured penetrates the fluorescent layer. Typically, the penetration of the fluorescent layer by the magnetic flux density B is not homogeneous, but depends on the magnetizable bodies and the distribution of magnetic substances etc. in the vicinity of the fluorescent layer. The orientation of the nanodiamonds is preferably stochastically uniformly distributed, so that the fluorescence radiation of the NV centers of the nanodiamonds of the fluorescence layer does not depend on the direction of the magnetic flux density B, but only on the amount of the magnetic flux density B.

Typically, the fluorescence radiation intensity of the fluorescence radiation of the NV centers of the fluorescence layer depends on the location-dependent amount of the magnetic flux density at the location of the respective NV center in the fluorescence layer.

A fluorescence camera of the proposed magnetic field camera as a third exemplary embodiment records the location-dependent intensity of the fluorescence radiation of the NV centers in a layer with paramagnetic centers in a large number of crystals. For this purpose, the fluorescence camera preferably comprises a two-dimensional array of light sensors of a light sensor array that are sensitive to the electromagnetic radiation of the fluorescence wavelength. For example, the two-dimensional array of light sensors of the light sensor array of the fluorescence camera may include a CCD sensor array or a CMOS array or a SPAD array. An evaluation circuit provides the light sensors with any required operating voltage, if necessary. Typically, the light sensors generate a photocurrent and/or a photocharge, which is typically proportional to the light intensity received or at least depends on the light intensity received in each case. The evaluation circuit records the value of this photocurrent or photocharge and uses it to determine, pixel by pixel, a measured value for the intensity of the fluorescence radiation at the location of the fluorescence layer of the sensor layer, which the optics of the fluorescence camera image on the respective pixel. The fluorescent layer comprises crystals with paramagnetic centers that fluoresce depending on the magnetic flux density B and the intensity of the pump radiation with which they are irradiated. In this way, the fluorescence camera can determine a value of the magnetic flux density per pixel of the photodetector array that corresponds to an area of the fluorescence layer assigned to this pixel.

The invention uses the connection between diamond dust and UV adhesive and the know-how from measurements of magnetic fields through fiber-coupled measurement of the fluorescence of NV-rich diamond powder. In this context, the document presented here refers to the unpublished German patent application DE 10 2022 122 505.4 .

The sensor element is NV-containing diamond dust applied flatly to a carrier material (any size, but should preferably be in the range of 100nm - 2µm particles) in conjunction with an optically transparent (500nm - 850nm) composite material (e.g. UV adhesive or other optically transparent Materials such as glass, glass pastes, epoxy etc.) are used. There are no restrictions on surface size and shape (e.g. curved or flexible surfaces are possible). The layer thickness of the sensor layer is significantly smaller than the surface area (typically a few 10µm). Additionally, the carrier material can be mirrored to improve excitation and detection, as well as to block possible stray light from outside the sensor. For this purpose, metals (e.g. Au, Ti, Al, Ag) can be applied to the carrier material or dielectric mirror coatings can be used. For example, ceramic, (tempered) glass or metal can be used as a carrier material. In order to get the sensor element as close as possible to a test piece, the carrier material should be made as thin as possible. In order to ensure the stability of the carrier material in conjunction with the diamond material, a further (thicker) optically transparent carrier material can be applied to the diamond material.

The document presented here proposes a sensor layer for these and other applications with similar measurement tasks. The sensor layer preferably has a carrier material in which a large number of diamonds or other crystals that include paramagnetic centers are embedded. One or more or all of these diamonds or one or more or all of these crystals have one or more NV centers and / or one or more other paramagnetic chemical centers. The NV centers of the sensor layer and/or the other paramagnetic centers of the sensor layer emit at least fluorescent radiation when irradiated with pump radiation. The special feature of the sensor layer proposed in the document presented here is that the carrier material can be, for example, a carrier material hardened using electromagnetic radiation and that after hardening the carrier material is susceptible to radiation with a pump radiation wavelength λ _pmp of the pump radiation with which the NV centers NVZ and/or or the other paramagnetic centers are pumped, is essentially transparent. Essentially this means that the losses that will undoubtedly occur are still so low that the functionality of the application in question is still ensured. In the same way, the carrier material should be essentially transparent for radiation with a fluorescence wavelength λ _fl of the fluorescence radiation of the NV centers. Essentially this means that the losses that will undoubtedly occur are still so low that the functionality of the application in question is still ensured. By curing a previously liquid carrier, the production of such a sensor layer is particularly easy and reliable with a high C _pk value.

In a variant of the sensor layer, the diamonds or crystals in the carrier material of the sensor layer are oriented substantially differently from one another, each with a substantially different orientation. This has the advantage that the sensor layer behaves isotropically and does not show a preferred direction. Mixing different diamond crystals between crystals can homogenize the measurement results and improve the Cpk value.

The diamond material of the sensor layer of the proposed magnetic field camera is preferably excited with green light if it contains NV centers. This can be done, for example, using one or more LEDs as a light source. In order to improve the targeted excitation of the diamond material, lenses can be used to focus/align the excitation in the proposed magnetic field camera. The fluorescence radiation is then measured in a spatially resolved manner using a light sensor array of the proposed magnetic field camera. For optimal detection, the fluorescence emission of the fluorescence radiation can be imaged onto the light sensor array using an objective/lens (fluorescence camera). Alternatively, the diamond material can also be applied directly to a light sensor array using optical filters - but the measuring range then only corresponds to the size of the sensor array. To improve the contrast, a shortpass filter can be used in front of the LED, i.e. the light source, and/or a longpass filter in front of the light sensor array of the proposed magnetic field camera, with the cutoff wavelength of the shortpass filter of the proposed magnetic field camera being smaller than that of the longpass -Filter of the proposed magnetic field camera should be. The longpass filter typically allows electromagnetic radiation to pass with a wavelength in the wavelength range that is technically relevant for the application in question and is greater than the cutoff wavelength of the longpass filter. The shortpass filter of the proposed magnetic field camera allows electromagnetic radiation to pass with a wavelength in the technically relevant wavelength range for the relevant application that is smaller than the cutoff wavelength of the shortpass filter. The proposed device preferably comprises a monochrome light sensor array without an RGB filter and without an infrared filter as the light sensor array of the proposed magnetic field camera.

• • Bereitstellen eines ersten Trägermaterials 9;
• • Beschichten der Oberfläche der Oberseite des ersten Trägermaterials 9 mit einer Verspiegelung 10;
• • Bereitstellen eines flüssigen und mittels elektromagnetischer Strahlung einer Aushärtewellenlänge λ_H härtbaren flüssigen, zweiten Trägermaterials, wobei in das zweite, flüssige Trägermaterial eine Vielzahl von Diamanten, vorzugsweise Nanodiamanten, bzw. Kristallen, vorzugsweise Nanokristallen, eingebettet sind und wobei einer oder mehrere oder alle Diamanten dieser Diamanten bzw. Kristalle NV-Zentren und/oder andere paramagnetischen Zentren aufweisen und wobei die NV-Zentren der Diamanten bzw. Kristalle des zweiten, flüssigen Trägermaterials und/oder die anderen paramagnetischen Zentren der Diamanten bzw. Kristalle des zweiten, flüssigen Trägermaterials bei Bestrahlung mit Pumpstrahlung zumindest eine Fluoreszenzstrahlung emittieren;
• • Benetzen der Oberfläche der Verspiegelung 10 mit dem zweiten, flüssigen Trägermaterial, das die Vielzahl eingebetteter Diamanten bzw. eingebetteter Kristalle aufweist;
• • Bestrahlen der Oberfläche der Verspiegelung 10 und die Schicht des zweiten Flüssigen Trägermaterials mit elektromagnetischer Strahlung, wobei die Wellenlänge dieser elektromagnetischen Strahlung, die Aushärtewellenlänge λ_H, so gewählt ist, dass das zweite, flüssige Trägermaterial aushärtet und sich in einen Festkörper wandelt. Es bildet sich eine Schicht 11 mit Kristallen mit paramagnetischen Zentren. Bevorzugt umfasst diese Schicht eine Vielzahl von Nanokristallen, die vorzugsweise vollkommen zufällig, gleichverteilt orientiert sind, und deren Dichte vorzugsweise im Wesentlichen nicht abhängig von der Position in der Schicht ist. Vorzugsweise handelt es sich bei den Kristallen um Diamanten. Vorzugsweise handelt es sich bei den paramagnetischen Zentren um NV-Zentren. Bei diesem Diamantmaterial handelt es sich bevorzugt um NV-reichem Diamantstaub in einem optisch transparentem Verbundmaterial, das für elektromagnetische Strahlung mit Pumpstrahlungswellenlänge λ_pmp und für elektromagnetische Strahlung mit Fluoreszenzstrahlungswellenlänge λ_fl im Wesentlichen transparent ist
• • Entfernen des nicht ausgehärteten, flüssigen, zweiten Trägermaterials insbesondere mittels eines Lösungsmittels, wobei der verbleibende Film des zweiten Trägermaterials auf der Oberfläche der Verspiegelung 10 nach optionaler Beschichtung mit einem weiteren Trägermaterial 12 zusammen mit den anderen Komponenten (9, 10, 11, 12) die Sensorschicht 5 bildet.

The essence of the document presented here is that it also describes and discloses a method for producing a sensor layer as described previously. The proposed procedure includes the steps:

• • Providing a first carrier material 9;
• • Coating the surface of the top side of the first carrier material 9 with a mirror coating 10;
• • Providing a liquid, second carrier material that can be hardened using electromagnetic radiation of a curing wavelength λ _H , wherein a plurality of diamonds, preferably nanodiamonds, or crystals, preferably nanocrystals, are embedded in the second, liquid carrier material, and wherein one or more or all diamonds these diamonds or crystals have NV centers and/or other paramagnetic centers and wherein the NV centers of the diamonds or crystals of the second, liquid carrier material and/or the other paramagnetic centers of the diamonds or crystals of the second, liquid carrier material upon irradiation emit at least one fluorescent radiation with pump radiation;
• • Wetting the surface of the mirror coating 10 with the second, liquid carrier material which has the plurality of embedded diamonds or embedded crystals;
• • Irradiating the surface of the mirror coating 10 and the layer of the second liquid carrier material with electromagnetic radiation, the wavelength of this electromagnetic radiation, the curing wavelength λ _H is chosen so that the second, liquid carrier material hardens and turns into a solid. A layer 11 is formed with crystals with paramagnetic centers. This layer preferably comprises a large number of nanocrystals, which are preferably oriented completely randomly, uniformly distributed, and whose density is preferably essentially not dependent on the position in the layer. The crystals are preferably diamonds. The paramagnetic centers are preferably NV centers. This diamond material is preferably NV-rich diamond dust in an optically transparent composite material that is essentially transparent for electromagnetic radiation with pump radiation wavelength λ _pmp and for electromagnetic radiation with fluorescence radiation wavelength λ _fl
• • Removing the uncured, liquid, second carrier material, in particular by means of a solvent, the remaining film of the second carrier material on the surface of the mirror coating 10 after optional coating with a further carrier material 12 together with the other components (9, 10, 11, 12) the sensor layer 5 forms.

Typically, the second, liquid carrier material only partially hardens, which enables the formation of the optical functional element.

The electromagnetic radiation with the curing wavelength λ _H has a penetration depth into the second, liquid carrier material, so that the second carrier material only hardens up to a certain thickness of the carrier material and thus forms the optical functional element, which is part of the development of the technical teaching of this document was only recognized as a surprising and advantageous approach.

The radiation used to harden the second liquid carrier material is preferably UV radiation. Radiation for curing with a curing wavelength λ _H between 320-380nm is particularly preferred.

In certain applications, nanoparticles with a diameter of less than 200nm and/or less than 100nm and/or less than 50nm and/or less than 20nm and/or less than 10nm and/or less than 5nm can be added to the second, liquid carrier material before providing it, so that they are in the Carrier material is stored after hardening. For example, they can be metallic nanoparticles.

Such metallic nanoparticles interact with diamonds in the second carrier material of the sensor layer 9 and can, for example, influence the fluorescence radiation of these diamonds DM.

The optional metallic nanoparticles can be, for example, gold and/or platinum and/or palladium and/or graphite and/or graphene and/or chromium and/or silicon and/or germanium and/or tin and/or sulfur and/or selenium and/or Tellurium and/or magnesium and/or calcium and/or strontium and/or barium and/or titanium and/or zirconium and/or hafnium and/or chromium and/or molybdenum and/or tungsten and/or iron and/or ruthenium and /or osmium and/or nickel and/or tin and/or cadmium and/or mercury and/or cerium and/or neodymium and/or samarium and/or gandolinium and/or dysprosium and/or erbium and/or ytterbium and/or Include thorium and/or proactinium and/or uranium and/or plutonium and/or mixtures thereof.

The metal atoms of the nanoparticles naturally comprised one or more elements from the periodic table of elements. Each of these elements occurs in different isotopes in nature with a respective natural isotope mixing ratio. In nature, each isotope has a natural proportion corresponding to the natural isotope mixing ratio. These isotopes may or may not have a nuclear magnetic moment μ depending on the isotope. For at least one element that the metallic nanoparticles have, the metallic nanoparticles preferably have an increased proportion in the isotope mixing ratio compared to the natural proportion of the isotope mixing ratio for at least one of the following isotopes: ¹² C, ¹⁴ C, ²⁸ Si, ³⁰ Si, ⁷⁰ Ge, ⁷² Ge, ⁷⁴ Ge, ⁷⁶ Ge, ¹¹² Zn, ¹¹⁴ Zn, ¹¹⁶ Zn, 118 Zn, ¹²⁰ Zn, ¹²² Zn, ¹²⁴ Zn ¹⁶ O, ¹⁸ O, ³² S, ³⁴ S, ³⁶ S, ⁷⁴ Se, ^{76 Se} , ⁷⁸ Se, ⁸⁰ Se, ⁸² Se, ¹²⁰ Te, ¹²² Te, ¹²⁴ Te, ¹²⁶ Te, ¹²⁸ Te, ¹³⁰ Te, ²⁴ Mg, ²⁶ Mg, ⁴⁰ Ca, ⁴² Ca, ^{44 Ca, 46 Ca} , ⁴⁸ Ca, ⁸⁴ Sr, ⁸⁶ Sr, ⁸⁸ Sr, ¹³⁰ Ba, ¹³² Ba, ¹³⁴ Ba, ^{136 Ba, 138 Ba} , ⁴⁶ Ti, ⁴⁸ Ti, ⁵⁰ Ti, ⁹⁰ Zr, ⁹⁰ Zr, ⁹² Zr, ⁹⁴ Zr, ⁹⁶ Zr, ¹⁷⁴ Hf, ¹⁷⁶ Hf , ¹⁷⁸ Hf, ⁵⁰ Cr, ⁵² Cr, ⁵³ Cr, ^{92 Mo, 94 Mo} , ⁹⁶ Mo, ^{98 Mo, 100 Mo, 180 W, 182 W , 184 W} , ¹⁸⁶ W, ⁵⁴ Fe, ⁵⁶ Fe, ⁵⁸ Fe, ⁹⁶ Ru, ⁹⁸ Ru, ¹⁰⁰ Ru, ¹⁰² Ru, ¹⁰⁴ Ru, ¹⁸⁴ Os, ¹⁸⁶ Os, ¹⁸⁸ Os, ¹⁹⁰ Os, ¹⁹² Os ⁵⁸ Ni, ⁶⁰ Ni, ⁶² Ni, ⁶⁴ Ni, ¹⁰² Pd, ¹⁰² Pd, ¹⁰⁴ Pd, ¹⁰⁶ Pd, ¹⁰⁸ Pd, ¹¹⁰ Pd ^{, 190} Pt, ¹⁹² Pt, ¹⁹⁴ Pt, 196 Pt, ¹⁹⁸ Pt ⁶⁴ Zn, ⁶⁶ Zn, ⁶⁸ Zn, ⁷⁰ Zn, ¹⁰⁶ Cd, ¹⁰⁸ Cd, ¹¹⁰ Cd, ¹¹² Cd, ¹¹⁴ Cd, ¹¹⁶ Cd, ¹⁹⁶ Hg, ¹⁹⁸ Hg, ²⁰⁰ Hg, ²⁰² Hg, ²⁰⁴ Hg ¹³⁶ Ce, ¹³⁸ Ce, ¹⁴⁰ Ce, ¹⁴² Ce, ¹⁴² Nd, ¹⁴⁴ Nd, ¹⁴⁶ Nd, ¹⁴⁸ Nd, ¹⁵⁰ Nd, ¹⁴⁴ Sm, ¹⁴⁶ Sm, ¹⁴⁸ Sm, ¹⁵⁰ Sm, ¹⁵² Sm, ¹⁵⁴ Sm, ¹⁵² Gd, ¹⁵⁴ Gd, ¹⁵⁶ Gd, ¹⁵⁸ Gd, 160 Gd, ¹⁵⁶ Dy, ¹⁵⁸ Dy, ¹⁶⁰ Dy, ¹⁶² Dy, ¹⁶⁴ Dy, ¹⁶² Er, ^{164 Er, 166 Er} , ¹⁶⁸ Er, ¹⁷⁰ Er, ¹⁶⁸ Yb, ¹⁷⁰ Yb, ¹⁷² Yb, ¹⁷⁴ Yb, ¹⁷⁶ Yb, ²³² Th, ²³⁴ Pa, ²³⁴ U, ²³⁸ U, ²⁴⁴ Pu. For the purposes of this document, “increased” means that the proportion of the above isotopes in the isotope mixing ratio is increased by 50% or more.

The value of the output signal of each sensor pixel, i.e. each light sensor of the light sensor array of the proposed magnetic field camera, then reflects the magnetic field strength at the location of the diamond material volume imaged on the relevant sensor pixel, i.e. the relevant light sensor of the light sensor array. The spatial resolution of the proposed magnetic field camera is therefore only limited by the imaging optics and the resolution of the light sensor array, i.e. the sensor resolution. Such a device can therefore achieve several megapixel resolution.

The evaluation electronics can calculate fluctuations caused by the excitation light or inhomogeneities in the diamond material by using values from a previously carried out reference measurement of a reference sample. The excitation, detection and the optically accessible side of the diamond material are preferably located in an optically closed housing in order to suppress the influence of external light.

For larger sensor areas, the working distance and focus of the fluorescence camera of the proposed magnetic field camera can be adjusted accordingly. Devices that use multiple fluorescence cameras to increase the spatial resolution with a larger sensor area are conceivable. The evaluation electronics can then convert the majority of images from this plurality of fluorescence cameras into one image.

A demonstrator has already proven its suitability for spatially resolved measurement of magnetic fields when testing the proposal.

SUMMARY OF THE THIRD PROPOSAL (MAGNETIC FIELD CAMERA)

The document presented here proposes a magnetic field camera head 21 with a sensor layer 5, a light source 2 for pump radiation 13 and a fluorescence camera with a light sensor array 1 made of light sensors. The sensor layer 5 preferably includes paramagnetic centers. When irradiated with pump radiation 13, these paramagnetic centers emit fluorescent radiation 14. The intensity of the emitted fluorescent radiation 14 depends on the intensity of the pump radiation 13 and the intensity of the magnetic flux density B at the respective location of the respective paramagnetic center in the sensor layer 5. The fluorescence camera of the proposed magnetic field camera captures a fluorescence image of the emission intensity distribution for the fluorescence radiation emission of the fluorescence radiation 14 from the sensor layer 5 and provides this.

The magnetic field camera head 21 can include auxiliary magnets 19.

The sensor layer 5 preferably comprises diamonds with NV centers as paramagnetic centers and/or NV centers NVZ and/or other crystals with paramagnetic centers.

In addition, the document presented here proposes a magnetic field camera with such a magnetic field camera head 21 and with a computer system 28 for operating the magnetic field camera head 21, the computer system 28 preferably being set up to generate a magnetic flux density image from a fluorescence image of the magnetic field camera head 21 and/or a one-dimensional course the fluorescence intensity or the magnetic flux density amount along a line through the fluorescence image.

Furthermore, the document presented here proposes the use of the magnetic field camera described above and/or the magnetic field camera head 21 described above for the examination of the magnetic field of magnetized objects and/or for the examination of the structure of magnetized objects and/or for the examination of the current density distribution in objects that through which an electric current flows.

With the technical teaching presented here, image formats for magnetic field cameras that were previously not possible are now possible in this third application example.

The document presented here lists some of these image formats below, which can be obtained using the magnetic field camera presented here with a suitable choice of crystal size of the crystals and nanocrystals 66 and/or diamonds and/or nanodiamonds and a suitable choice of the number of pixels of the light sensor array 1 of the proposed magnetic field camera.

The detection range of a light sensor (pixel) of the light sensor array 1 of the proposed magnetic field camera on the surface of the layer 11 should preferably be larger than twice the average diameter of the crystals and/or nanocrystals 66. Then the Nyquist theorem is usually fulfilled. The detection range of a light sensor (pixel) of the light sensor array 1 of the proposed magnetic field camera on the surface of the layer 11 should preferably be greater than 5 times, better 10 times, better 20 times, better 50 times the average diameter of the crystals and / or Nanocrystals 66 or diamonds and/or nanodiamonds. This enables a stochastic uniform distribution of the orientation of several crystals and/or nanocrystals or diamonds and/or nanodiamonds, whose fluorescent radiation is detected by this light sensor (pixel) of the light sensor array 1 of the proposed magnetic field camera.

Magnetic field camera with an area pump radiation source

The document presented here describes, among other things, a flat pump radiation source PL for the irradiation of paramagnetic centers with pump radiation 13 with a pump radiation wavelength λ _pmp , the flat pump radiation source PL comprising one or more primary pump radiation sources, in particular in the form of LEDs 44. The one or more primary pump radiation sources are preferably set up to emit pump radiation 13 with the pump radiation wavelength λ _pmp .

The planar pump radiation source preferably comprises a first optical functional element, in particular a glass plate 46 and/or a planar optical waveguide and/or an optical system. In the sense of the document presented here, the first optical functional element is an optical fiber LWL. The first optical functional element typically has a first surface 67. The first optical functional element preferably distributes the pump radiation 13 with the pump radiation wavelength λ _pmp , which is emitted by the primary pump radiation sources, over an area.

Typically, the first optical functional element is thus set up so that this areally distributed pump radiation 13 emerges from a first surface of the first optical functional element of the areal pump radiation source.

This areal pump radiation source enables the layer 11 to be illuminated using LEDs 44 instead of laser diodes as primary pump radiation sources. This is significantly more cost-effective than illumination using lasers. However, when LEDs 44 are mentioned in the document presented here, lasers are included as possible primary pump radiation sources.

In another embodiment, the one or more primary pump radiation sources of the areal pump radiation source include one or more LEDs 44 as primary pump radiation sources of the pump radiation 13. This enables good and, above all, more homogeneous illumination of the layer 11 with pump radiation 13.

• • eine Glasplatte 46 und/oder
• • einen flächenhaften Lichtwellenleiter und/oder
• • eine Mehrzahl von Lichtwellenleitern, die einem flächenhaften Lichtwellenleiter funktionsäquivalent sind, und/oder
• • ein mikrooptisches System mit zumindest einem photonischen Kristall, das dazu eingerichtet ist, die Pumpstrahlung 13 mit der Pumpstrahlungswellenlänge λ_pmp flächenhaft zu verteilen, und/oder
• • ein mikrooptisches System mit zumindest einem mikrooptischen Spiegel, das dazu eingerichtet ist, die Pumpstrahlung 13 mit der Pumpstrahlungswellenlänge λ_pmp flächenhaft zu verteilen, und/oder
• • ein anderes optisches System, das dazu eingerichtet ist, die Pumpstrahlung 13 mit der Pumpstrahlungswellenlänge λ_pmp flächenhaft zu verteilen.

In another embodiment, the first optical functional element comprises one or more of the following optical functional elements:

• • a glass plate 46 and/or
• • a flat optical fiber and/or
• • a plurality of optical waveguides that are functionally equivalent to a flat optical waveguide, and/or
• • a micro-optical system with at least one photonic crystal, which is designed to distribute the pump radiation 13 over an area with the pump radiation wavelength λ _pmp , and/or
• • a micro-optical system with at least one micro-optical mirror, which is set up to distribute the pump radiation 13 over an area with the pump radiation wavelength λ _pmp , and/or
• • another optical system that is set up to distribute the pump radiation 13 over an area with the pump radiation wavelength λ _pmp .

This first optical functional element thus enables the flat distribution of the pump radiation 13 for irradiating the layer 11 with pump radiation 13.

In another embodiment, the areal pump radiation source of the proposed magnetic field camera irradiates an area layer 11 with area-wide crystals and/or nanocrystals 66 and/or diamonds with paramagnetic centers and/or NV centers with pump radiation 13 of the pump radiation wavelength λ _pmp area-wide. This first optical functional element thus enables the flat distribution of the pump radiation 13 for irradiating the layer 11 with pump radiation 13.

In another embodiment, the areal pump radiation source comprises the layer 11 and irradiates the layer 11 via the first surface 67. In this other embodiment, the layer 11 with the first surface 67 of the first optical functional element, here the glass plate 46, is directly or indirectly mechanical tied together. The layer 11 preferably covers the first surface 67 of the first optical functional element, here the glass plate 46, completely or partially.

This enables a very simple construction of a planar fluorescent radiation source as a combination of the layer 11 with the planar pump radiation source, the planar pump radiation source irradiating the layer 11 with pump radiation 13 and then the paramagnetic centers in the layer 11 with fluorescence radiation 14 in a planar manner depending on the magnetic flux density Location of the respective paramagnetic center in layer 11 emit. This results in a flat fluorescence radiation source in which the intensity of the fluorescence radiation 14 emitted locally at a point on the radiation surface of the flat fluorescence radiation source depends on the magnetic flux density at this point on the radiation surface of the flat fluorescence radiation source.

In another embodiment, the layer 11 emits a fluorescent radiation 14 with a fluorescent radiation wavelength λ _fl in a locally different manner depending on the value of the local amount of the magnetic flux density in the layer 11. This also results in a flat fluorescence radiation source in which the intensity of the fluorescence radiation 14 emitted locally at a point on the radiation surface of the flat fluorescence radiation source depends on the magnetic flux density at this point on the radiation surface of the flat fluorescence radiation source.

In another embodiment, the areal pump radiation source comprises a further optical functional element that separates electromagnetic radiation with the pump radiation wavelength λ _pmp from the electromagnetic radiation with fluorescence radiation wavelength λ _fl . This results in a flat fluorescence radiation source in which the intensity of the fluorescence radiation 14 emitted locally at a point on the radiation surface of the flat fluorescence radiation source depends on the magnetic flux density at this point on the radiation surface of the flat fluorescence radiation source and which does not emit any pump radiation, which increases the contrast.

• • eine dichroitisch verspiegelte Schicht 47 und/oder
• • einen optischen Filter (Longpass) 6.

In another embodiment, the further optical functional element comprises one or more of the following optical functional elements:

• • a dichroic mirrored layer 47 and/or
• • an optical filter (long pass) 6.

This enables a very simple construction of the separation device for the separation of the electromagnetic radiation with the pump radiation wavelength λ _pmp from the electromagnetic radiation with the fluorescence radiation wavelength λ _fl .

In another embodiment, the further optical functional element separates the pump radiation 13 with the pump radiation wavelength λ _pmp from the fluorescence radiation 14 with the fluorescence radiation wavelength λ _fl . This results in a flat fluorescence radiation source in which the intensity of the fluorescence radiation 14 emitted locally at a point on the radiation surface of the flat fluorescence radiation source depends on the magnetic flux density at this point on the radiation surface of the flat fluorescence radiation source and which does not emit any pump radiation, which increases the contrast.

Manufacturing process for the flat pump radiation source

The document presented here also presents a method for producing a flat pump radiation source (44, 46). The process begins with the provision of one or more primary pump radiation sources. The one or more primary pump radiation sources emit pump radiation 13 with the pump radiation wavelength λ _pmp . A further step includes providing a first optical functional element, for example a glass plate 46. Typically, the first optical functional element has a first surface 67. The first optical functional element preferably distributes the pump radiation 13 with the pump radiation wavelength λ _pmp , which the primary pump radiation sources emit, over an area. The first optical functional element is thus set up so that this areally distributed pump radiation 13 emerges over an area from the first surface 67 of the first optical functional element of the areal pump radiation source. Another step of the method is typically a mechanical connection of the primary pump radiation sources to the first optical functional element. Here, for example, a circuit board (PCB) 43 can produce the mechanical connection by means of soldering and/or gluing. The primary pump radiation sources are preferably set up after mechanical connection to emit pump radiation 13 with the pump radiation wavelength λ _pmp upon electrical activation, for example by current supply, and into the first optical functional element, in particular via an edge of the first optical functional element and/or a side surface of the first optical Functional element to be fed. The first optical functional element is preferably set up so that the pump radiation 13 spreads out over a surface area within the first optical functional element in a light surface. The first optical functional element preferably emits pump radiation 13 with the pump radiation wavelength λ _pmp via the first surface 67 of the first optical functional element perpendicular to the above-described light surface of the pump radiation 13 within the first optical functional element pump radiation (13) with the pump radiation wavelength λ _pmp .

In another embodiment, the method for producing a sensor layer 5 comprises, as one step, providing a first optical functional element, in particular a glass plate (46) and/or a planar optical waveguide and/or an optical system. Furthermore, the method in this embodiment preferably includes the provision of a liquid second carrier material that can be hardened by means of electromagnetic radiation of a curing wavelength λ _H. A large number of diamonds, preferably nanodiamonds, or crystals 66, preferably nanocrystals 66, are preferably embedded in the second, liquid carrier material. One or more or all of these diamonds or crystals 66 and/or nanocrystals 66 preferably have NV centers and/or other paramagnetic centers. Preferably, the NV centers of the diamonds or crystals 66 or nanocrystals 66 of the second, liquid carrier material and/or the other paramagnetic centers of the diamonds or crystals 66 and/or nanocrystals 66 of the second, liquid carrier material emit at least when irradiated with pump radiation 13 a fluorescent radiation 14. In this embodiment, the method presented here for producing a flat pump radiation source (44, 46) preferably includes the step of wetting and coating the first surface 67 of the first optical functional element, in particular the glass plate 46 and/or the flat optical waveguide and/or or the optical system, with the second, liquid carrier material, which preferably has the plurality of embedded diamonds or embedded crystals 66 and / or nanocrystals 66. The method presented here for producing a flat pump radiation source (44, 46) preferably includes, as a further step, irradiating the first surface 67 of the first optical functional element, in particular the glass plate (46) and/or the flat optical waveguide and/or the optical system, and / or the layer of the second liquid carrier material with electromagnetic radiation, the wavelength of this electromagnetic radiation, the curing wavelength λ _H , being selected so that the second, liquid carrier material hardens and turns into a solid, in particular in the form of the layer 11. For this purpose, curing radiation is preferably fed in as electromagnetic radiation with the curing wavelength λ _H at the locations of the first optical functional element - for example the glass plate 46 - at which the primary pump radiation sources - for example the LEDs 44 - are to feed in the pump radiation 13 later. As a result, the layer is cured in a self-adjusting manner on the first surface 67 of the first optical functional element - for example the glass plate 46 - and thus manufactured.

In another embodiment of the method for producing a sensor layer 5, the layer 11 comprises a plurality of crystals 66 and/or nanocrystals 66 with paramagnetic centers.

In another embodiment of the method for producing a sensor layer 5, the crystals 66 and/or nanocrystals 66 in the layer 11 are completely random and essentially uniformly distributed are ted, and/or the density of crystals 66 and/or nanocrystals 66 in the layer 11 is preferably essentially not dependent on the position in the layer 11.

In another embodiment of the method for producing a sensor layer 5, the crystals 66 and/or nanocrystals 66 comprise diamonds. The crystals 66 and/or nanocrystals 66 preferably comprise paramagnetic centers in this form. In this embodiment, the crystals 66 and/or nanocrystals 66 preferably comprise diamonds with NV centers.

In another embodiment of the method for producing a sensor layer 5, the layer 11 is an optically transparent composite material that is essentially transparent for electromagnetic radiation with pump radiation wavelength λ _pmp and for electromagnetic radiation with fluorescence radiation wavelength λ _fl .

In another embodiment of the method for producing a sensor layer 5, the method includes a further step of removing the uncured, liquid, second carrier material, in particular by means of a solvent, the remaining film of the second carrier material on the first surface 67 of the first optical functional element, in particular the glass plate 46, which forms layer 11.

In another embodiment of the method for producing a sensor layer 5, the method includes a further step of coating the layer 11 with a mirror coating 10.

In another embodiment of the method for producing a sensor layer 5, the method includes a further step of coating the layer 11 and/or the mirror coating 10 with a further carrier material 12.

In another embodiment of the method for producing a sensor layer 5, the method includes a further step of using the layer 11 together with other components (9, 10, 12) as a sensor layer 5 of a sensor head 21.

In another embodiment of the method for producing a sensor layer 5, the method includes a further step of producing a diffuser or a diffuser layer 69 over the entire surface or in regions on the first surface 67 of the first optical functional element.

Producing the sensor layer 5 on a carrier material 9

In another embodiment of the method for producing a sensor layer 5 in a housing 8, the method for producing a sensor layer 5 includes, as a first step, providing a first carrier material 9. A further step of this method for producing a sensor layer 5 in a housing 8 includes coating the surface of the top side of the first carrier material 9 with a mirror coating 10. The method also includes providing a liquid second carrier material that can be hardened by means of electromagnetic radiation of a curing wavelength λ _H. A large number of diamonds, preferably nanodiamonds, or crystals 66, preferably nanocrystals 66, are preferably embedded in the second, liquid carrier material. One or more or all of these diamonds or crystals 66 and/or nanocrystals 66 preferably have NV centers and/or other paramagnetic centers. The NV centers of the diamonds or crystals 66 and/or nanocrystals 66 of the second, liquid carrier material and/or the other paramagnetic centers of the diamonds or crystals 66 and/or nanocrystals 66 of the second, liquid carrier material emit when irradiated with pump radiation 13 at least one fluorescent radiation 14. The method preferably includes wetting the surface of the mirror coating 10 with the second, liquid carrier material, which has the plurality of embedded diamonds or embedded crystals 66 and/or nanocrystals 66. The method preferably includes irradiating the surface of the mirror coating 10 and the layer of the second liquid carrier material with electromagnetic radiation. The wavelength of this electromagnetic radiation, the curing wavelength λ _H , is preferably selected so that the second, liquid carrier material hardens and turns into a solid. Typically, a layer 11 is formed with crystals 66 and/or nanocrystals 66 with paramagnetic centers. This layer 11 preferably comprises a plurality of nanocrystals 66, which are preferably oriented completely randomly, uniformly distributed, and whose density is preferably essentially not dependent on the position in the layer 11. The crystals are preferably diamonds. The paramagnetic centers are preferably NV centers. This diamond material is preferably NV-rich Diamond dust made of crystals 66 and/or nanocrystals 66 in an optically transparent composite material that is essentially transparent for electromagnetic radiation with pump radiation wavelength λ _pmp and for electromagnetic radiation with fluorescence radiation wavelength λ _fl . The proposed method preferably includes removing the uncured, liquid, second carrier material, in particular by means of a solvent, the remaining film of the second carrier material on the surface of the mirror coating 10 after optional coating with a further carrier material 12 together with the other components (9, 10 , 11, 12) forms the sensor layer 5.

Use of a flat pump radiation source (46, 44)

The document presented here also describes a method for using a flat pump radiation source (46, 44). Steps of the method are providing the flat pump radiation source (46, 44) and providing a flat layer 11, the flat layer 11 comprising a plurality of crystals 66 and/or nanocrystals 66 which have paramagnetic centers. The method preferably comprises irradiating the flat layer 11 with pump radiation 13 from a pump radiation source (2, 44), the pump radiation 13 having a pump radiation wavelength λ _pmp . During this irradiation, paramagnetic centers of crystals 66 and/or nanocrystals 66 of the flat layer 11 emit fluorescence radiation 14 over an area through which the pump radiation 13 of the flat pump radiation source (46, 44). The method further preferably comprises separating the fluorescence radiation 14 from the pump radiation 13 by means of a separation agent (6, 47). Typically, optical filters (long pass) 6 and/or dichroic mirrored optional layers 47 can represent such separation means (6,47). The method also includes detecting the fluorescent radiation 14 by means of a detection means 15, 1. Typically, the light sensors of the light sensor array 1 and/or the evaluation electronics 15 of the fluorescence camera can represent such detection means 15, 1.

In a further embodiment of the method for using a planar pump radiation source (46, 44), the method includes imaging the distribution of the local intensity of the planar emission of the fluorescent radiation 14 onto a light sensor array 1 by means of imaging optics 7;

In a further embodiment of the method for using a flat pump radiation source (46, 44), the method includes acquiring measured values from light sensors of the light sensor array 1 and processing these measured values in an evaluation electronics 15 and preferably forming a fluorescence image from such measured values.

In a further embodiment of the method for using a flat pump radiation source (46, 44), the method includes compressing the measured values recorded by light sensors of the light sensor array 1 and processing these measured values in an evaluation electronics 15, in particular into a compressed fluorescence image. For example, the sensor head 21 can generate formats of lossless image compression methods such as GIF, RAW, BMP, PNG. For example, the sensor head 21 can generate formats of lossy image compression methods such as JPEG.

In a further embodiment of the method for using a flat pump radiation source (46, 44), the method includes transmitting a fluorescence image and/or a compressed fluorescence image to a higher-level computer system 28.

In a further embodiment of the method for using a flat pump radiation source (46, 44), the method includes decompressing the received compressed fluorescence image to a transmitted fluorescence image in the higher-level computer system 28 and/or the use of the received fluorescence image to form a transmitted fluorescence image in the higher-level computer system 28.

In a further embodiment of the method for using a planar pump radiation source (46, 44), the method comprises determining an image of the one-dimensional and/or two-dimensional and/or three-dimensional distribution of the magnetic flux density as a function of one or more transmitted or captured fluorescence images. A higher-level computer system 28 preferably carries out this determination.

In a further embodiment of the method for using a planar pump radiation source (46, 44), the method includes displaying an image of the one-dimensional and/or two-dimensional dimensional and/or three-dimensional distribution of the magnetic flux density and/or one or more transmitted or captured fluorescence images and/or images calculated therefrom on a display 32 or another medium for displaying images.

In a further embodiment of the method for using a planar pump radiation source (46, 44), the method comprises generating a video sequence from several of an image of the one-dimensional and/or two-dimensional and/or three-dimensional distribution of the magnetic flux density and/or from one or more transmitted or captured fluorescence images and/or from images calculated therefrom. The evaluation electronics 15 and/or the higher-level computer system 28 can generate this video sequence.

In a further embodiment of the method for using a flat pump radiation source (46, 44), the method includes compressing the video sequence into a compressed video sequence. The evaluation electronics 15 and/or the higher-level computer system 28 can carry out this compression. They preferably use one of the following compression methods: AVC, HEVC, MPEG. The evaluation electronics 15 of the sensor head 21 preferably creates the video sequence and compresses it using a compression method and then transmits the compressed video sequence via the data bus 29 to the higher-level computer system 28 for operating the sensor head 21.

In a further embodiment of the method for using a flat pump radiation source (46, 44), the method includes displaying the video sequence on a display 32 or another medium for displaying video sequences.

Sensor head

The document presented here also proposes a sensor head 21 with a sensor layer 5 and a light source (2, 44) for pump radiation 13 and a fluorescence camera with a light sensor array 1 made of light sensors. Here too, the sensor layer preferably comprises 5 paramagnetic centers which, when irradiated with pump radiation 13, emit fluorescent radiation (14). The intensity of the fluorescent radiation 14 depends on the intensity of the pump radiation 13 and the intensity of the magnetic flux density at the respective location of the respective paramagnetic center. According to the proposal, the fluorescence camera captures a fluorescence image of the emission intensity distribution for the emission of the fluorescence radiation 14 from the sensor layer 5 and provides the fluorescence image.

In a further embodiment of the sensor head 21, the sensor head includes auxiliary magnets 19.

In a further embodiment of the sensor head 21, the sensor layer 5 comprises diamonds with NV centers as paramagnetic centers.

Magnetic field camera

• • ein Magnetflussdichtenbetragsbild und/oder
• • ein Bild der eindimensionales und/oder zweidimensionales und/oder dreidimensionales Verteilung der magnetischen Flussdichte und/oder
• • einen Datensatz mit Werten eines eindimensionalen Verlaufs der Fluoreszenzintensität oder des Magnetflussdichtenbetrags längs einer Linie durch das Fluoreszenzbild und/oder das daraus berechneten Bild hindurch

erzeugt.The document presented here proposes a magnetic field camera with one of the magnetic field camera heads 21 described above. The magnetic field camera has a computer system 28 for operating the magnetic field camera head 21, the computer system 28 preferably consisting of a fluorescence image of the magnetic field camera head 21 and/or an image calculated therefrom

• • a magnetic flux density image and/or
• • an image of the one-dimensional and/or two-dimensional and/or three-dimensional distribution of the magnetic flux density and/or
• • a data set with values of a one-dimensional progression of the fluorescence intensity or the magnetic flux density amount along a line through the fluorescence image and/or the image calculated from it

generated.

Using a magnetic field camera

The document presented here proposes to use one of the previously discussed magnetic field cameras for studying the magnetic field of magnetized objects.

The document presented here proposes to use one of the previously discussed magnetic field cameras to study the structure of magnetized objects.

The document presented here proposes to use one of the previously discussed magnetic field cameras to investigate the material composition of magnetized objects.

The document presented here proposes to use one of the previously discussed magnetic field cameras to investigate the current density distribution in objects through which an electric current flows.

resolution

After decompression, the fluorescence camera preferably delivers an image with more than 19,000 pixels.

Possible image formats for the magnetic field camera are, for example, depending on the light sensor array format of the light sensor array 1 (source: https://de.wikipedia.org/wiki/Bildaufl%C3°/B6sung) abbreviation Surname x y x:y DAR PAR x y QQVGA Quarter QVGA 160 × 120 4:3 4:3 1:1 19,200 [2][3] GB Game Boy[4] 160 × 144 4:3 4:3 1:1 23,040 GBC GameBoy 160 × 144 4:3 4:3 1:1 23,040 color [5] palm Palm Low 160 × 160 1:1 1:1 1:1 25,600 LoRes resolution GBA GameBoy 240 × 160 3:2 3:2 1:1 38,400 Advance [6] ⅛VGA ⅛VGA 240 × 180 4:3 4:3 1:1 43,200 ZXS ZX Spectrum 256 × 192 4:3 4:3 1:1 49,152 NDS Nintendo 256 × 192 4:3 4:3 1:1 49,152 DS[7] 3DS Nintendo 3DS 400 × 240 5:3 5:3 1:1 96,000 resolution each eye[8] CGA Color 320 × 200 8:5 4:3 0.833 64,000 Graphics Adapter[3] QVGA Quarter 320 × 240 4:3 4:3 1:1 76,800 VGA[3] 360 × 240 3:2 3:2 1:1 86,400 384 × 240 8:5 4:3 0.833 92,160 palm Palm High 320 × 320 1:1 1:1 1:1 102,400 HiRes resolution QSVGA Quarter SVGA 400 × 300 4:3 4:3 1:1 120,000 WQVGA Wide QVGA 432 × 240 9:5 9:5 1:1 103,680 480 × 160 3:1 3 1:1 76,800 PSP PlayStation 480 × 272 16:9 16:9 1,007 130,560 Portable[9] HVGA Half VGA[2] 480 × 320 3:2 3:2 1:1 153,600 PSION 640 × 240 8:3 8:3 1:1 153,600 Series 5 480 × 360 4:3 4:3 1:1 172,800 EGA Enhanced 640 × 350 64:35 4:3 0.729 224,000 Graphics Adapters [3] QHD Quarter HD 640 × 360 16:9 16:9 1:1 230,400 HSVGA Half SVGA 600 × 400 3:2 3:2 1:1 240,000 VGA Video 640 × 480 4:3 4:3 1:1 307,200 Graphics Array[2] HGC Hercules 720 × 348 60:29 4:3 0.644 250,560 Graphics card MDA Monochrome 720 × 350 72:35 4:3 0.648 252,000 display adapter Apple Lisa 720 × 364 ≈ 2:1 4:3 0.674 262,080 WVGA, Wide VGA 720 × 400 9:5 9:5 1:1 288,000 WGA 720 × 480 3:2 3:2 1:1 345,600 720 × 540 4:3 4:3 1:1 388,800 WVGA, Wide VGA 800 × 480 5:3 5:3 1:1 384,000 WGA WVGA, Wide VGA 848 × 480 ≈ 16:9 16:9 1,006 407,040 WGA WVGA, Wide VGA 852 × 480 ≈ 16:9 16:9 1,001 408,960 WGA WVGA, Wide VGA 858 × 484 ≈ 16:9 16:9 1,002 415,272 WGA WVGA, Wide VGA 864 × 480 9:5 9:5 1:1 414,720 WGA PAL-D PAL Digital[3] 768 × 576 4:3 4:3 1:1 442,368 SVGA Excellent 800 × 600 4:3 4:3 1:1 480,000 VGA[3][2] HXGA Half 832 × 624 4:3 4:3 1:1 519,168 Megapixels (Apple) qHD, QHD Quarter HD 960 × 540 16:9 16:9 1:1 518,400 960 × 540 16:9 16:9 1:1 518,400 PS Vita PlayStation 964 × 544 16:9 16:9 1:1 524,416 Vita 964 × 544 ≈ 16:9 16:9 1:1 524,416 DVGA Double VGA 960 × 640 3:2 3:2 1:1 614,400 960 × 720 4:3 4:3 1:1 691,200 WXGA Wide XGA 1024 × 576 16:9 16:9 1:1 589,824 WSVGA Wide SVGA 1024 × 600 ≈ 17:10 16:9 1,041 614,400 [3] WSVGA Wide SVGA 1072 × 600 ≈ 16:9 16:9 0.995 643,200 EVGA Extended VGA 1024 × 768 4:3 4:3 1:1 786,432 XGA Extended 1024 × 768 4:3 4:3 1:1 786,432 Graphics Array[2][3] XGA XGA+[3] 1152 × 864 4:3 4:3 1:1 995,328 HD720, High 1280 × 720 16:9 16:9 1:1 921,600 720p Definition, “HD ready”[3] WXGA Wide XGA 1280 × 768 5:3 5:3 1:1 983,040 (Bright View) DSVGA Double SVGA 1200 × 800 3:2 3:2 1:1 960,000 WXGA Wide XGA[3] 1280 × 800 8:5 8:5 1:1 1,024,000 OLPC One laptop 1200 × 900 4:3 4:3 1:1 1,080,000 per Child SXVGA, Excellent 1280 × 960 4:3 4:3 1:1 1,228,800 QVGA Extended VGA, Quad VGA SXGA Excellent 1280 × 1024 5:4 5:4 1:1 1,310,720 XGA[2][3] WXGA Wide XGA 1360 × 768 ≈ 16:9 16:9 1,003 1,044,480 WXGA Wide XGA 1366 × 768 ≈ 16:9 16:9 0.999 1,049,088 WXGA Wide XGA 1376 × 768 ≈ 16:9 16:9 0.992 1,056,768 WXGA+ WXGA Plus[3] 1400 × 900 14:9 14:9 1:1 1,260,000 WXGA+ WXGA Plus 1440 × 900 8:5 8:5 1:1 1,296,000 (Apple) 1440 × 960 3:2 3:2 1:1 1,382,400 SXGA+ SXGA Plus[3] 1400 × 1050 4:3 4:3 1:1 1,470,000 UWXGA Ultra wide 1600 × 768 25:12 2,083 1:1 1,228,800 XGA WSXGA Wide SXGA[3] 1600 × 900 16:9 16:9 1:1 1,440,000 WSXGA Wide SXGA[3] 1600 × 1024 25:16 25:16 1:1 1,638,400 UXGA Ultra 1600 × 1200 4:3 4:3 1:1 1,920,000 XGA[2][3] WSXGA+ Wide 1680 × 1050 8:5 8:5 1:1 1,764,000 SXGA+[3] FHD, High 1920 × 1080 16:9 16:9 1:1 2,073,600 HD1080, Definition, 1080p “Full HD” WUXGA Wide UXGA[3] 1920 × 1200 8:5 8:5 1:1 2,304,000 2K DCI 2K - Digital 2048 × 1080 256:135 256:135 1:1 2,211,840 Cinema Initiatives QWXGA Quad WXGA 2048 × 1152 16:9 16:9 1:1 2,359,296 TXGA Tesselar XGA 1920 × 1400 48:35 1,371 1:1 2,688,000 1920 × 1440 4:3 4:3 1:1 2,764,800 SUXGA Great UXGA 2048 × 1536 4:3 4:3 1:1 3,145,728 QXGA Quad 2048 × 1536 4:3 4:3 1:1 3,145,728 XGA[2][3] FHD+ Full HD+ 2160 × 1080 18:9 18:9 1:1 2,332,800 FHD+ Full HD+ 2340 × 1080 2.10:1 2.10:1 1:1 2,527,200 UWFHD Ultra wide 2560 × 1080 21:9 21:9 1:1 2,764,800 FHD WQHD, Wide QHD 2560 × 1440 16:9 16:9 1:1 3,686,400 1440p (QHD),[3] “2K”[10] WQXGA Wide 2560 × 1600 8:5 8:5 1:1 4,096,000 QXGA [3] QSXGA Quad SXGA[3] 2560 × 2048 5:4 5:4 1:1 5,242,880 QHD+ Quad high 3200 × 1800s 16:9 16:9 1:1 5,760,000 definition Plus QSXGA+ Quad SXGA+ 2800 × 2100 4:3 4:3 1:1 5,880,000 DFHD Double full 3840 × 1080 32:9 32:9 1:1 4,147,200 HD 2K+ Quad HD+ 2880 × 1440 18:9 18:9 1:1 4,147,200 2K+ Quad HD+ 2960 × 1440 18.5:9 / 18.5:9 / 1:1 4,262,400 19:9 19:9 DWUXGA Double 3840 × 1200 32:10 32:10 1:1 4,608,000 WUXGA WQSXGA Wide QSXGA 3200 × 2048 25:16 25:16 1:1 6,553,600 QUXGA Quad 3200 × 2400 4:3 4:3 1:1 7,680,000 UXGA[2] HSVGA Hex SVGA 3200 × 2400 4:3 4:3 1:1 7,680,000 UWQHD, Ultra wide 3440 × 1440 21:9 43:18 1:1 4,953,600 1440p QHD (QHD) QHD Quad high 3440 × 1440 21:9 43:18 1:1 4,953,600 1440p definition UWQXGA Ultra wide 3840 × 1600 2.35:1 2.35:1 1:1 6,144,000 QXGA QHD+ Quad high 3840 × 1600 2.35:1 2.35:1 1:1 6,144,000 1600p definition UW4k Plus (Ultra Wide 4K) UHD 4K, Ultra high 3840 × 2160 16:9 16:9 1:1 8,294,400 2160p definition “4K”[3] QWUXGA Quad WUXGA 3840 × 2400 8:5 8:5 1:1 9,216,000 WQUXGA Wide QUXGA 3840 × 2400 8:5 8:5 1:1 9,216,000 4K DCI, 4K - Digital 4096 × 2160 256:135 256:135 1:1 8,847,360 4K2K Cinema initiatives, High Definition, “4K2K”[3] Apple 4096 × 2304 16:9 16:9 1:1 9,437,184 iMac Retina 4K HXGA Hex XGA 4096 × 3072 4:3 4:3 1:1 12,582,912 DQHD Double QHD 5120 × 1440 32:9 32:9 1:1 7,372,800 WUHD Wide UHD, 5120 × 2160 21:9 21:9 1:1 11,059,200 “5K2K”[3] UHD+ Ultra high 5120 × 2880 16:9 16:9 1:1 14,745,600 definition Plus, “5K”[3] WHXGA Wide HXGA 5120 × 3200 8:5 8:5 1:1 16,384,000 Apple Pro 6016 × 3384 16:9 16:9 1:1 20,358,144 display XDR HSXGA Hex SXGA 5120 × 4096 5:4 5:4 1:1 20,971,520 WHSXGA Wide HSXGA 6400 × 4096 25:16 25:16 1:1 26,214,400 HUXGA Hex UXGA 6400 × 4800 4:3 4:3 1:1 30,720,000 FUHD, Full UHD, 7680 × 4320 16:9 16:9 1:1 33,177,600 4320p 8K[3] WHUXGA Wide HUXGA 7680 × 4800 8:5 8:5 1:1 36,864,000 8K DCI 8K - Digital 8192 × 4320 256:135 256:135 1:1 35,389,440 Cinema Initiatives QUHD, Quad UHD, 15360 × 8640 16:9 16:9 1:1 132,710,400 8640p “16K”[3]

For the transmission of the video sequences from the sensor head 21 to a higher-level computer system 28, for example, the following video formats come into consideration: Some video formats: (Source: https://de.wikipedia.org/wiki/Bildaufl%C3°/B6sung) format Technology Width Height Aspect ratio pixel VHS analogous 320 240 4:3 76,800 (0.08MP) Hi8 analogous 533 400 4:3 213,200 (0.21MP) S-VHS analogous 533 400 4:3 213,200 (0.21MP) LD analogous 640 480 4:3 307,200 (0.30MP) VCD (PAL) digital 352 288 4:3 101,376 (0.10MP) SVCD (PAL) digital 480 576 4:3 276,480 (0.28MP) DVB (PAL), DVD-Video (PAL) digital 720 576 4:3 or 16:9 414,720 (0.41MP) HDTV (“720p”) digital 1280 720 16:9 921,600 (0.92MP) Full HD (“1080p”) digital 1920 1080 16:9 2,073,600 (2.07 MP) WUXGA digital 1920 1200 4:10 p.m 2,304,000 (2.30MP) HD MAC / QWXGA analog / digital 2048 1152 16:9 2,359,296 (2.36MP) 2K digital 2048 1536 4:3 3,145,728 (3.15MP) UHDV-1 (“2160p”) digital 3840 2160 16:9 8,294,400 (8.30 MP) 4K digital 4096 3072 4:3 12,582,912 (12.58MP) UHDV-2 digital 7680 4320 16:9 33,177,600 (33.20 MP) UHXGA digital 7680 4800 4:10 p.m 36,864,000 (36.90 MP)

A video format used by the magnetic field camera for transmitting the video sequences preferably has more than 70,000 pixels per frame after decompression.

The sensor head 21 preferably transmits the video sequences with a frame rate of more than 5fps, better than 10fps, better than 20fps, better than 50fps, better than 100fps to the higher-level computer system 28. (fps = frames per second = images per second)

Advantages of the magnetic field camera

The proposed invention presented here is freely scalable and offers significantly better spatial resolution than common solutions.

• • Die frei wählbare Sensorfläche der Sensorschicht 5 an der Unterseite 24 des Magnetfeldkamerakopfes 21 ermöglicht auch die Vermessung gekrümmter und flexibler Flächen.
• • Der Magnetfeldkamerakopfe 21 bietet eine erhöhte Ortsauflösung bis maximal zur Partikelgröße der Nanodiamanten mit den NV-zentren in der Sensorschicht 5. Dies Größe kann beispielsweise bei ^~100nm liegen!
• • Der Magnetfeldkamerakopfe 21 bietet eine erhöhte Zeitauflösung aufgrund der hohen möglichen Bildübertragungsrate.
• • Der Magnetfeldkamerakopfe 21 bietet eine erhöhte galvanische Trennung. Die die Sensorschicht 5 ist bevorzugt aus einem dielektrischen, isolierendem Material gefertigt und beeinflusst damit typischerweise nicht das zu messende Magnetfeld.
• • Die Sensorschicht 5 des Magnetfeldkamerakopfes 21 ist typischerweise unempfindlich gegenüber elektromagnetischen Störungen und Einstrahlungen und strahlt selbst keine elektromagnetischen Wellen im Radiobereich oder Mikrowellenbereich ab. Sie ist damit anderen Quantensensoren überlegen.

Advantages over current technology are:

• • The freely selectable sensor surface of the sensor layer 5 on the underside 24 of the magnetic field camera head 21 also enables the measurement of curved and flexible surfaces.
• • The magnetic field camera head 21 offers an increased spatial resolution up to a maximum of the particle size of the nanodiamonds with the NV centers in the sensor layer 5. This size can be, for example, ^~ 100nm!
• • The magnetic field camera head 21 offers increased time resolution due to the high possible image transmission rate.
• • The magnetic field camera head 21 offers increased galvanic isolation. The sensor layer 5 is preferably made of a dielectric, insulating material and therefore typically does not influence the magnetic field to be measured.
• • The sensor layer 5 of the magnetic field camera head 21 is typically insensitive to electromagnetic interference and radiation and does not itself emit any electromagnetic waves in the radio or microwave range. This makes it superior to other quantum sensors.

Fourth embodiment spectrometer

Suggestion

The document presented here proposes a high-frequency spectrum analyzer for the spectral analysis of an external signal (S _ωnk ) as a fourth exemplary embodiment. However, the principles of the device presented here go beyond this. Therefore, the document presented here also describes other devices, methods and applications that are based on these principles.

The proposed high-frequency spectrum analyzer typically includes one or more sensor elements (SE, 5). The high-frequency spectrum analyzer preferably comprises a magnetic field generating device (L _c ), which can be electrically controlled and/or can be implemented by a permanent magnet (PM) and/or by a gradient-affected permanent magnet (GPM). These preferably generate an additional magnetic field, the flux density (B _ad ) of which depends on the position within a sensor element (SE) and/or along a waveguide (1380, 1880, 2380, 6830, 6980). The high-frequency spectrum analyzer therefore preferably comprises a waveguide (1380, 1880, 2380, 6830, 6980) with a longitudinal extension with a waveguide extension coordinate (x) along this longitudinal extension. The points on the waveguide (1380, 1880, 2380, 6830, 6980) along the longitudinal extent of the waveguide (1380, 1880, 2380, 6830, 6980) then typically correlate with a unique waveguide extension coordinate (x). The sensor elements (SE, 5) are preferably placed above the waveguide (1380, 1880, 2380, 6830, 6980) along the transport direction for electromagnetic radiation along the waveguide (1380, 1880, 2380, 6830, 6980). The sensor elements (SE, 5) preferably include a large number of crystals and/or diamond nanocrystals (ND). The crystals and/or diamond nanocrystals (ND) typically include paramagnetic centers, preferably NV centers in diamond as diamond nanocrystals (ND). When irradiated with pump radiation (LB) of a pump radiation wavelength (λ _pmp ), the paramagnetic centers typically emit fluorescence radiation (FL) with a fluorescence radiation wavelength (λ _fl ). The intensity (I _is (x), I _is (y)) of the emission of the fluorescent radiation (FL) typically depends on the frequency of the microwave signal (µW) and the total magnetic flux density (B _Σ ) at the location of the respective paramagnetic center within the sensor elements (SE, 5). For analysis, the high-frequency spectrum analyzer feeds the external signal (S _ωnk ) or a mixed microwave signal (µW_MX_I) mixed with the external signal (S _ωnk ) and then typically filtered signal, the filtered, mixed microwave mixed signal, as a microwave signal (µW) into the waveguide (1380, 1880, 2380, 6830, 6980). Various planar waveguides are particularly suitable as waveguides (1380, 1880, 2380, 6830, 6980). This microwave signal (µW) then typically interacts with the paramagnetic centers in the sensor elements (SE, 5). The magnetic field generating device (L _c ) then floods the sensor elements (SE, 5) with a magnetic field with an additional magnetic flux density (B _ad (x), B _ad (y)). The sensor element (SE) is preferably an extended sensor element layer (5), the areal fluorescence radiation (FL) of which is detected in a spatially resolved manner by a magnetic field camera, which is preferably part of the high-frequency spectrum analyzer, using a light sensor array (1) made up of photodetectors (PD). This additional magnetic flux density (B _ad (x), B _ad (y)) then contributes to the respective total flux density (B _Σ ) at the respective position (x,y) of the respective paramagnetic center in the sensor element (SE) or in the sensor element layer ( 5) at the associated waveguide extension coordinate (x, y). The high-frequency spectrum analyzer preferably includes means Acquisition of the measured value curve of the intensity curve (I _is (x), I _is (y)) of the emission of the fluorescence radiation (FL) along the waveguide (1380, 1880, 2380, 6830, 6980). Such a means can, for example, comprise device parts of a magnetic field camera. The high-frequency spectrum analyzer is preferably set up to use a measured value curve of the intensity curve (I _is (x), I _is (y)) of the emission of the fluorescence radiation (FL) along the waveguide (1380, 1880, 2380, 6830, 6980) recorded using these means. to infer a high-frequency spectrum (K _s (ω _µW ), K _w (ω _µW )) of the external signal (S _ωnk ). The advantage of such a device is that the course of the fluorescence intensity of the intensity I _is (x), I _is (y) of the fluorescence radiation (FL) along the sensor element (SE, 5) along the waveguide in a gradient along the waveguide Magnetic field, in particular a gradient permanent magnet (GPM), after detection by a magnetic field camera and / or a large number of photodetectors (PD) can be converted extremely quickly into a spectrum K (ω _µW ) of the external signal (S _ωnk ) by means of a simple transformation .

In a special embodiment, the high-frequency spectrum analyzer comprises a first waveguide (6980_1) and a second waveguide (6980_II) as a waveguide (1380, 1880, 2380, 6830, 6980), the first waveguide (6980_1) being different from the second waveguide (6980_II). In this embodiment, the high-frequency spectrum analyzer generates a first microwave signal (µW_I) by mixing the external signal (S _ωnk ) with a first internal microwave signal (µW_G_I) with a first internal microwave frequency (ω _{µW_I} ). In this embodiment, the high-frequency spectrum analyzer generates a second microwave signal (µW_II) by mixing the external signal (S _ωnk ) with a second internal microwave signal (µW_G_II) with a second internal microwave frequency (ω _{µW_II} ). The high-frequency spectrum analyzer then preferably feeds the first microwave signal (µW_I) into the first waveguide (6980_I). The high-frequency spectrum analyzer preferably feeds the second microwave signal (µW_II) into the second waveguide (6980_II). The high-frequency spectrum analyzer preferably comprises means for recording the measured value curve of the intensity curves (I _is (x), I _is (y)) of the emission of the fluorescence radiation (FL) along the waveguide coordinate (x) of the first waveguide (6980_I) and along the waveguide coordinate (y) of the second waveguide (6980_II). In this embodiment, the high-frequency spectrum analyzer is then preferably set up to use the recorded measured value curves of the intensity curves (I _is (x), I _is (y)) of the emission of the fluorescence radiation (FL) along the waveguide coordinate (x) of the first waveguide (6980_I) and along the waveguide coordinate (y) of the second waveguide (6980_II) to infer one or more high-frequency spectra (Ks(ω _µW ), K _w (ω _µW )) of the external signal (S _ωnk ). The advantage of such a construction is that there are different vertical lines in the diagram 2 can be scanned simultaneously and therefore more quickly. This determines the position (30) of the V-formation from the lower resonance edge (522) and upper resonance edge (525) (see 51b) more precise and possible very quickly.

A microwave signal (S _ωnk ) to be characterized is guided, for example, in a planar waveguide, the surface of which is covered with NV powder and is preferably additionally subjected to a static magnetic field distribution. Microwave radiation of one frequency leads to an attenuation of the fluorescence intensities at positions of certain magnetic field strengths, which means that the microwave spectrum can be reconstructed by evaluating the fluorescence intensity distribution.

This makes an optical broadband single-shot spectrum analyzer for microwave radiation in the frequency range from approx. 0.1 to 100GHz possible.

The unknown microwave signal (S _ωnk ) is fed into a microwave component, for example a waveguide (e.g. a planar PCB), which carries the microwave signal (µW) of the microwaves (e.g. coplanar waveguide). A microwave component can also be an interconnection of several microwave components. Such a microwave component can also spectrally separate the unknown microwave signal and/or couple it to resonators (eg ring resonators). The microwave component is preferably designed in such a way that evanescent microwave fields are present on the surface. This surface is coated with NV diamond powder. This can be done, for example, by a mixture of NV diamond powder with diamond nanocrystals (ND) powder or another crystal powder with other paramagnetic centers and UV-curable adhesive carrier material TM). After applying this colloidal mixture to a microwave component, the UV-curable adhesive (carrier material TM) is cured, preferably using UV radiation (curing radiation 4910). Other adhesives (carrier materials TM) with other curing methods are conceivable. The actual sensor element (SE) is created through hardening.

Furthermore, an additional magnetic field distribution (B _ad ) is generated in the NV diamond powder of the sensor element (SE) by permanent magnets (PM, GPM) or electromagnets (magnetic field generating means L _c ), which is preferably perpendicular to the magnetic field (B _µW ) of the microwave fields.

In addition, the NV diamond powder is excited to emit fluorescent radiation (FL) by a suitable light source (e.g. green LED) as a pump radiation source. A photodetector array (1) and/or a camera measure the distribution of the fluorescence intensity of the intensity I _is (t) of the fluorescence radiation over the waveguide.

Microwave radiation of a certain microwave frequency (ω _µW ) causes a characteristic fluorescence intensity attenuation of the intensity I _is (t) of the fluorescence radiation of the NV centers in the diamond crystals of the NV diamond powder. This fluorescence intensity attenuation typically depends on the strength of the static magnetic field at the NV centers or paramagnetic centers that are assigned to the respective photodetector of the respective measurement pixel.

By _measuring the fluorescence intensity distribution intensity I (t) of the fluorescence radiation of the NV centers in the diamond crystals of the NV diamond powder with a camera (or other sensor or photodetector array) and knowledge of the distribution of the static magnetic field (especially after prior calibration of the measuring device), the spectral components of the microwave signal (S _ωnk ) can be reconstructed.

A first significant advantage of using NV diamond powder, which includes many small disordered diamond crystals (diamond nanocrystals ND) with NV centers, compared to using single crystal diamond is, above all, the simplicity of production, which does not require any alignment of a single crystal Diamonds require more compared to a magnetic field. Such a colloidal mixture (KL) of NV diamond crystals and an adhesive as a carrier material (TM) is easy to handle by spin-coating, dispensing or printing and is therefore batch-capable, which massively reduces the manufacturing costs for these sensor systems and ensures CMOS compatibility and CMOS -Fab capability.

What is new is the idea of placing such a mixture on a waveguide (1380, 1880, 2380, 6830, 6980), particularly in a self-adjusting manner. The colloidal mixture (KL) is therefore easy to apply to a printed circuit board (PCB) or a wafer of micro-integrated semiconductor circuits, which can include said waveguides (1380, 1880, 2380, 6830, 6980).

The spectrometer presented here can therefore be micro-integrated.

The NV powder layer comprising diamond nanocrystals (ND) with NV centers and/or paramagnetic centers and/or comprising crystals with paramagnetic centers is preferably thin and therefore interacts well with the evanescent components of the microwave fields carried in the PCB.

Preferably, the thickness D _SE of the sensor element SE and/or the sensor element layer 5 is thinner than the width of the smallest structures of the respective waveguide in order to ensure good resolution.

By mixing the NV diamond powder with diamond nanocrystals (ND) with NV centers and/or paramagnetic centers and/or crystals with paramagnetic centers with an adhesive as a carrier material, the NV powder can be targeted to areas of the PCB and/or the wafer are applied in which the evanescent microwave field of the microwave signal (µW) has a high amplitude and suitable orientation.

In contrast to single-crystalline diamonds, in the technical teaching presented in this document, no alignment of NV diamond crystals is necessary, since in NV powder all spatial directions appear statistically equally distributed as alignment directions of the NV center axes.

In comparison to other spectrum analyzers, a device according to the technical teaching presented here can cover a very wide frequency range with the measurement technology presented here. The measuring range is given by the maximum applied static magnetic field (28GHz / Tesla). For example, with a magnetic field distribution of 0T to 2.5T, this results in a measuring range of approx. 0-70Ghz. The biggest advantage, however, is that when using a magnetic field camera, the entire measuring range can be measured with a “single shot” using individual frames of a magnetic field camera. A vote through A microwave frequency, such as for a heterodyne measurement, is not necessary with the measurement technology presented here.

When preparing the document presented here, it was also recognized that the device is also suitable for the high-precision measurement of unknown external magnetic flux densities (B _ext ).

The device can therefore determine in PARALLEL an unknown microwave frequency (ω _nk ) and an unknown magnetic flux density (B _ext ).

Due to the high parallelism of the measurements, the large number of measured values can be used to significantly reduce errors. The technical teaching presented here enables broadband, fast and highly accurate measurements of magnetic flux densities (B _ext ) and/or microwave frequencies (ω _µW ).

• Magnetokardiographie (MKG): Die hier vorgestellten Sensorsysteme können beispielsweise zur Erfassung und Aufzeichnung von magnetischen Feldern, die vom Herz eines Menschen oder eines Tieres erzeugt werden, verwendet werden. Die Magnetokardiographie ermöglicht eine nicht-invasive Untersuchung der Herzaktivität und kann zur Diagnose von Herzkrankheiten eingesetzt werden.

This results in the following areas of application for the technical teaching presented here:

• Magnetocardiography (MCG): The sensor systems presented here can be used, for example, to detect and record magnetic fields generated by the heart of a human or an animal. Magnetocardiography provides a non-invasive examination of cardiac activity and can be used to diagnose heart disease.

Magnetoencephalography (MEG): The sensor systems presented here can be used, for example, to measure the magnetic fields generated by the electrical activity of the brain of a human or an animal. Magnetoencephalography enables high-resolution imaging of brain activity and can be used in neuroscience and clinical diagnostics.

Neurointerfaces: The sensor systems presented here can be used, for example, to measure the magnetic fields that are generated by the electrical activity of the brains of people or animals, with the measured values then being used to control computers and/or computer systems and/or quantum computers directly or can be used indirectly, which in turn can control actuators or fill databases with data.

Biomagnetics: The sensor systems presented here can be used, for example, in the research and measurement of magnetic fields generated by biological organisms. This includes studies of magnetoreception in animals, studies of brain function and activity, but also the detection of cancer using magnetic markers in medical imaging.

Material characterization: The sensor systems presented here can be used, for example, to characterize the magnetic properties of materials. This includes measuring magnetic susceptibility, critical magnetic fields and magnetization curves, which provide important information about material properties. This includes the detection and display of material defects such as cracks, voids and inhomogeneities.

Geophysical exploration: The sensor systems presented here can be used, for example, in geophysics to measure magnetic fields and map geological structures. This includes the search for mineral resources, the study of the earth's crust and the study of the earth's magnetic field.

Quantum information technology and quantum computing: The sensor systems presented here can, for example, be used in some approaches to realize quantum bits (qubits) in quantum computers. They enable the measurement and control of quantum states and are likely useful for the development of scalable quantum computers.

Detection of weak magnetic signals: Due to their high sensitivity, the sensor systems presented here can be used in various applications, for example, to detect weak magnetic signals. This includes the investigation of material defects, non-destructive testing, magnetic resonance imaging (MRI) and the detection of biomagnetic signals.

Current measurement: The sensor systems presented here can be used, for example, for the non-invasive measurement of current in electrical systems. They can be used in power electronics, electric vehicles, solar modules, power devices (IGBTs, thyristors, diodes, etc.) and other applications to monitor current flow.

Speed and position control: The sensor systems presented here can, for example, be used to record the speed and position of rotating and/or translationally moving components such as motors, fans and gears. They enable precise regulation and control of the relevant movement.

Automotive applications: The sensor systems presented here can be used in various applications in the automotive industry, for example. These include, for example, the detection of crankshaft position, camshaft signal, wheel speed, steering angle and other parameters for engine control, anti-lock braking system (ABS), traction control and other safety-related systems.

Magnetic field measurement: The sensor systems presented here can be used, for example, to measure and monitor magnetic fields. This can be applied in areas such as magnetic sensing, materials characterization, geophysics, robotics and other scientific and industrial applications.

Security and alarm systems: The sensor systems presented here can be used, for example, in security systems to monitor the opening or closing of doors, windows and other entrances. They can also be used in alarm systems to detect intruders or monitor movement.

Power supply and energy efficiency: The sensor systems presented here can, for example, be used in power supply to monitor energy consumption and optimize energy efficiency. They can be used in smart grids, electric vehicle charging systems and other applications to provide accurate measurements and control.

Electronics and communication: The sensor systems presented here can be used, for example, in electronics and communication technology to detect and reduce magnetic interference. They can also be used in non-contact switches, locking systems, joysticks and other electronic devices and for troubleshooting electronic circuits and microelectronic circuits.

Industrial automation: The sensor systems presented here can be used, for example, in industrial automation to record positions, angles, angular velocities, angular accelerations, speeds, accelerations and movements. They enable precise control of machines and processes.

Carrier substrate

• Zum Ersten, entsprechend einer Sensorelementposition A des Sensorelements (SE):
  • Bei einer Positionierung des Sensorelements (SE, 5) entsprechend einer Sensorelementposition A des Sensorelements (SE) umfasst die Wellenleitung (1380, 2380, 6830, 6980) nur eine Signalleitung (1330) oder eine differentielle Signalleitung (6830) aus zwei Signalleitungen (6810, 6820). Bei einer Positionierung des Sensorelements (SE, 5) entsprechend einer Sensorelementposition A des Sensorelements (SE) befindet sich das jeweilige Sensorelement (SE) auf der jeweiligen Signalleitung (1330, 6810, 6820) und ist vorzugsweise mit der jeweiligen Signalleitung (1330, 6810, 6820) fest verbunden. Die jeweiligen betreffende Signalleitung (1330, 6810, 6820) weist dabei typischerweise eine jeweilige Breite (d_s) auf. Vorschlagsgemäß ist bevorzugt in einigen Anwendungsfällen die jeweilige Breite (d_SE) des jeweiligen Sensorelements (SE) kleiner als die jeweilige Breite (d_s) der jeweiligen Signalleitung (1330, 6810, 6820).

In order to be able to implement such a high-frequency spectrum analyzer, the document presented here proposes a carrier substrate (1360), in particular for such a high-frequency spectrum analyzer and/or for devices for determining magnetic flux densities. The carrier substrate (1360) typically has a surface with one or more wave lines (1380, 1880, 2380, 6830, 6980). According to the proposal, the carrier substrate (1360) comprises a sensor element (SE) for detecting the component of a total flux density (B _Σ ) parallel and/or perpendicular to the surface of the carrier substrate (1360) and parallel and/or perpendicular to the direction of the wave lines (1380, 1880, 2380 , 6830, 6980), where the component of the total flux density (B _Σ ) depends on the size and position of the sensor element (SE) relative to the waveguide structures. According to the proposal, the sensor element (SE) comprises a plurality of crystals and/or diamond nanocrystals (ND), the crystals, if present, and diamond nanocrystals (ND), if present, paramagnetic centers, in particular and preferably NV -Centers in diamond called diamond nanocrystals (ND). The preferred diamond nanocrystals (ND) with NV centers and/or paramagnetic centers are preferably present as diamond powder before processing. The sensor element (SE) preferably comprises a carrier material (TM), in which the crystals and/or diamond nanocrystals (ND) are typically embedded. Basically, the vector of the magnetic flux density of a microwave signal (µW) in the microwave line (1380, 1880, 2380, 6830, 6980) and the axis of the NV centers or paramagnetic centers in the crystals and/or diamond nanocrystals (ND) of the sensor element (SE) are perpendicular to one another. In contrast, the axis of the external magnetic field must typically be parallel to the NV center axis or to the axis of the paramagnetic centers in order to reduce the intensity I _is (t) of the fluorescence radiation (FL) of the paramagnetic centers or NV centers at resonance between the Microwave signal (µW) and the NV center or the paramagnetic center. In order to be able to be used as intended, the carrier material (TM) is preferably essentially transparent for electromagnetic radiation (pump radiation LB) of a pump radiation wavelength (λ _pmp ) and essentially transparent for electromagnetic radiation (fluorescence radiation FL) of a fluorescence radiation wavelength (λ _fl ). Typically, paramagnetic centers of the crystals and/or the diamond nanocrystals (ND) emit fluorescence radiation (FL) with a fluorescence wavelength (λ _fl ) when they are irradiated with pump radiation (LB) of the pump radiation wavelength (λ _pmp ). The sensor element (SE) now preferably has a width (d _SE ). According to the proposal, different positionings result for the sensor element (SE, 5) relative to a waveguide (1380, 1880, 2380, 6830, 6980):

• First, corresponding to a sensor element position A of the sensor element (SE):
  • When positioning the sensor element (SE, 5) corresponding to a sensor element position A of the sensor element (SE), the wave line (1380, 2380, 6830, 6980) comprises only one signal line (1330) or a differential signal line (6830) made up of two signal lines (6810, 6820). When positioning the sensor element (SE, 5) corresponding to a sensor element position A of the sensor element (SE), the respective sensor element (SE) is located on the respective signal line (1330, 6810, 6820) and is preferably connected to the respective signal line (1330, 6810, 6820) firmly connected. The respective signal line (1330, 6810, 6820) in question typically has a respective width (d _s ). According to the proposal, in some applications the respective width (d _SE ) of the respective sensor element (SE) is preferably smaller than the respective width (d _s ) of the respective signal line (1330, 6810, 6820).

• Bei einer Positionierung des Sensorelements (SE, 5) entsprechend einer Sensorelementposition B des Sensorelements (SE) umfasst die Wellenleitung (1880, 2380, 6830, 6980) eine nicht-leitende Isolationslücke (1840, 2340, 2350, 6840). Bei einer Positionierung des Sensorelements (SE, 5) entsprechend einer Sensorelementposition B des Sensorelements (SE) befindet sich vorzugsweise das jeweilige Sensorelement (SE) in der jeweiligen nicht-leitenden Isolationslücke (1840, 2340, 2350, 6840) und das jeweilige Sensorelement (SE) ist vorzugsweise mit Oberfläche der jeweiligen nicht-leitenden Isolationslücke (1840, 2340, 2350, 6840) fest verbunden. Typischerweise weist die jeweilige nicht-leitende Isolationslücke (1840, 2340, 2350, 6840) eine jeweilige Breite (d_IS1, d_IS2, d_SL) auf. Bevorzugt ist die jeweilige Breite (d_SE) des jeweiligen Sensorelements (SE) kleiner als die jeweilige Breite (d_IS1, d_IS2, d_SL) der jeweiligen nicht-leitenden Isolationslücke (1840, 2340, 2350, 6840).

Secondly, corresponding to a sensor element position B of the sensor element (SE):

• When positioning the sensor element (SE, 5) corresponding to a sensor element position B of the sensor element (SE), the waveguide (1880, 2380, 6830, 6980) comprises a non-conductive insulation gap (1840, 2340, 2350, 6840). When positioning the sensor element (SE, 5) corresponding to a sensor element position B of the sensor element (SE), the respective sensor element (SE) is preferably located in the respective non-conductive insulation gap (1840, 2340, 2350, 6840) and the respective sensor element (SE ) is preferably firmly connected to the surface of the respective non-conductive insulation gap (1840, 2340, 2350, 6840). Typically, the respective non-conductive insulation gap (1840, 2340, 2350, 6840) has a respective width (d _IS1 , d _IS2 , d _SL ). Preferably, the respective width (d _SE ) of the respective sensor element (SE) is smaller than the respective width (d _IS1 , d _IS2 , d _SL ) of the respective non-conductive insulation gap (1840, 2340, 2350, 6840).

• Bei einer Positionierung des Sensorelements (SE, 5) entsprechend einer Sensorelementposition C des Sensorelements (SE) umfasst die Wellenleitung (1380, 6830) eine Signalleitung (1330, 6810, 6820) und eine elektrisch im Wesentlichen nicht-leitende Isolationsfläche (1340, 1350). Bei einer Positionierung des Sensorelements (SE, 5) entsprechend einer Sensorelementposition C des Sensorelements (SE) befindet sich das jeweilige Sensorelement (SE) bevorzugt auf der jeweiligen elektrisch im Wesentlichen nicht-leitenden Isolationsfläche (1340, 1350) und ist vorzugsweise mit der jeweiligen elektrisch im Wesentlichen nicht-leitenden Isolationsfläche (1340, 1350) fest verbunden. Die jeweilige Signalleitung (1330, 6810, 6820) weist eine jeweilige Breite (d_s) aufweist, wobei vorzugsweise die jeweilige Breite (d_SE) des jeweiligen Sensorelements (SE) kleiner als die jeweilige Breite (d_s) der jeweiligen Signalleitung (1330, 6810, 6820) ist und wobei bevorzugt der maximale Abstand eines Teils des jeweiligen Sensorelements (SE) von der jeweils nächstliegenden Kante der jeweiligen Signalleitung (1330, 6810, 6820) kleiner als das doppelte der jeweiligen Breite (d_s) der jeweiligen Signalleitung (1330, 6810, 6820) ist.

Thirdly, corresponding to a sensor element position C of the sensor element (SE):

• When positioning the sensor element (SE, 5) corresponding to a sensor element position C of the sensor element (SE), the wave line (1380, 6830) comprises a signal line (1330, 6810, 6820) and an electrically essentially non-conductive insulation surface (1340, 1350). . When positioning the sensor element (SE, 5) corresponding to a sensor element position C of the sensor element (SE), the respective sensor element (SE) is preferably located on the respective electrically essentially non-conductive insulation surface (1340, 1350) and is preferably electrically connected to the respective one essentially non-conductive insulation surface (1340, 1350). The respective signal line (1330, 6810, 6820) has a respective width (d _s ), wherein preferably the respective width (d _SE ) of the respective sensor element (SE) is smaller than the respective width (d _s ) of the respective signal line (1330, 6810, 6820) and wherein preferably the maximum distance of a part of the respective sensor element (SE) from the closest edge of the respective signal line (1330, 6810, 6820) is less than twice the respective width (d _s ) of the respective signal line (1330 , 6810, 6820).

• Bei einer Positionierung des Sensorelements (SE, 5) entsprechend einer Sensorelementposition D des Sensorelements (SE) umfasst die Wellenleitung (1880, 2380, 6980) eine nicht-leitende Isolationslücke (1840, 2340, 2350, 6840) und eine elektrisch leitende Signalmassefläche (1310, 1320). Bei einer Positionierung des Sensorelements (SE, 5) entsprechend einer Sensorelementposition D des Sensorelements (SE) befindet sich das jeweilige Sensorelement (SE) auf der jeweiligen elektrisch leitenden Signalmassefläche (1310, 1320) und ist vorzugsweise mit der jeweiligen elektrisch leitenden Signalmassefläche (1310, 1320) fest verbunden. Bevorzugt weist die jeweilige nicht-leitende Isolationslücke (1840, 2340, 2350, 6840) eine jeweilige Breite (d_IS1, d_IS2, d_SL) auf, wobei vorzugsweise jeweilige die Breite (d_SE) des Sensorelements (SE) kleiner als die jeweilige Breite (d_IS1, d_IS2, d_SL) der jeweiligen nicht-leitenden Isolationslücke (1840, 2340, 2350, 6840) ist und wobei vorzugsweise der maximale Abstand eines Teils des jeweiligen Sensorelements (SE) von der jeweiligen nächstliegenden Kante der jeweiligen nicht-leitenden Isolationslücke (1840, 2340, 2350, 6840) kleiner als das doppelte der jeweiligen Breite (d_IS1, d_IS2, d_SL) der jeweiligen nicht-leitenden Isolationslücke (1840, 2340, 2350, 6840) ist.

Fourth, corresponding to a sensor element position D of the sensor element (SE):

• When the sensor element (SE, 5) is positioned corresponding to a sensor element position D of the sensor element (SE), the waveguide (1880, 2380, 6980) comprises a non-conductive insulation gap (1840, 2340, 2350, 6840) and an electrically conductive signal ground surface (1310 , 1320). When the sensor element (SE, 5) is positioned corresponding to a sensor element position D of the sensor element (SE), the respective sensor element (SE) is located on the respective electrically conductive signal ground surface (1310, 1320) and is preferably connected to the respective electrically conductive Signal ground surface (1310, 1320) firmly connected. Preferably, the respective non-conductive insulation gap (1840, 2340, 2350, 6840) has a respective width (d _IS1 , d _IS2 , d _SL ), the width (d _SE ) of the sensor element (SE) preferably being smaller than the respective one Width (d _IS1 , d _IS2 , d _SL ) of the respective non-conductive insulation gap (1840, 2340, 2350, 6840) and wherein preferably the maximum distance of a part of the respective sensor element (SE) from the respective closest edge of the respective non-conductive conductive insulation gap (1840, 2340, 2350, 6840) is smaller than twice the respective width (d _IS1 , d _IS2 , d _SL ) of the respective non-conductive insulation gap (1840, 2340, 2350, 6840).

In a further embodiment of the carrier substrate (1360), the carrier material (TM) comprises a radiation-hardened carrier material (TM). In a further embodiment of the carrier substrate (1360), the carrier material (TM) comprises a UV radiation-hardened carrier material (TM).

Carrier substrate set with high C _pk value

• - einen Signalleiter (1330) mit einer Breite (dS) und/oder
• - eine elektrisch im Wesentlichen nicht-leitende linke Isolationslücke (2340) mit einer Breite (dIS1) und/oder
• - eine elektrisch im Wesentlichen nicht-leitende rechte Isolationslücke (2350) mit einer Breite (dIS2) und/oder
• - einen Schlitz (1840) mit einer Breite (dSL) und/oder
• - einen linken Signalleiter (6810) mit einer Breite (dS) und/oder
• - einen rechten Signalleiter (6820) mit einer Breite (dS) und/oder
• - eine elektrisch isolierende Lücke (6840) mit einer Breite (dSL)

als jeweiliges Strukturelement auf. Somit weist jedes der jeweiligen Trägersubstrate (1360) des Trägersubstratsatzes zumindest ein jeweiliges Sensorelement (SE) des jeweiligen Trägersubstrats (1360) des Trägersubstratsatzes mit einem jeweiligen Durchmesser (dSE) und seiner jeweiligen Mitte des jeweiligen Sensorelements (SE) des jeweiligen Trägersubstrats (1360) des Trägersubstratsatzes auf. Das jeweilige Sensorelement (SE) des jeweiligen Trägersubstrats (1360) des Trägersubstratsatzes befindet sich typischerweise auf oder in dem zumindest einen jeweiligen Strukturelement der zumindest einen jeweiligen Wellenleitung (1380, 1880, 2380, 6830, 6980) des jeweiligen Trägersubstrats (1360). Dieses jeweilige Strukturelement des jeweiligen Trägersubstrats (1360) des Trägersubstratsatzes weist dabei jeweils die besagte jeweilige Breite und eine jeweilige Mitte dieses jeweiligen Strukturelements des jeweiligen Trägersubstrats (1360) bei seiner halben jeweiligen Breite auf. Die jeweilige Mitte des zumindest einen jeweiligen Sensorelements des jeweiligen Trägersubstrats (1360) des Trägersubstratsatzes ist fertigungsstreuungsbedingt typischerweise jeweils gegenüber der jeweiligen Mitte dieses jeweiligen Strukturelements des jeweiligen Trägersubstrats (1360) um einen jeweiligen Versatz fertigungsbedingt versetzt. Der aus diesen jeweiligen Versätzen der jeweiligen Trägersubstrate (1360) als jeweilige Streuungen und der mittleren Breite der jeweiligen Breite des zumindest einen jeweiligen Strukturelements der jeweiligen Trägersubstrate (1360) als Toleranzintervall für den Versatz der jeweiligen Sensorelemente (SE) gegenüber dem jeweiligen Strukturelement ermittelte C_pk-Wert für die Gesamtheit der Trägersubstrate (1360) dieses Trägersubstratsatzes ist bei Verwendung der hier vorgestellten, insbesondere selbstjustierenden Fertigungstechniken bei richtiger Anwendung der Verfahren besser als 1,66 und damit für die Fertigung in automobilen Lieferketten geeignet.The particularly self-adjusting manufacturing techniques described in the document presented here enable the production of sensor elements (SE) with a high Cpk value. The Cpk value is preferably determined as a sample using an arbitrary set of carrier substrates, the carrier substrate set comprising a plurality of carrier substrates (1360). The carrier substrate set preferably comprises a plurality of at least 10 and/or better at least 20 and/or better at least 50 and/or better at least 100 carrier substrates (1360). In order to be able to determine a meaningful Cpk value, the carrier substrates (1360) of the carrier substrate set should be constructed in essentially the same way (identical in construction). Typically, each of the carrier substrates (1360) of the carrier substrate set has at least one waveguide (1380, 1880, 2380, 6830, 6980). Furthermore, the at least one waveguide (1380, 1880, 2380, 6830, 6980) of each respective carrier substrate (1360) of the carrier substrate set typically has at least one of the structural elements

• - a signal conductor (1330) with a width (dS) and/or
• - an electrically essentially non-conductive left insulation gap (2340) with a width (dIS1) and/or
• - an electrically essentially non-conductive right insulation gap (2350) with a width (dIS2) and/or
• - a slot (1840) with a width (dSL) and/or
• - a left signal conductor (6810) with a width (dS) and/or
• - a right signal conductor (6820) with a width (dS) and/or
• - an electrically insulating gap (6840) with a width (dSL)

as a respective structural element. Thus, each of the respective carrier substrates (1360) of the carrier substrate set has at least one respective sensor element (SE) of the respective carrier substrate (1360) of the carrier substrate set with a respective diameter (dSE) and its respective center of the respective sensor element (SE) of the respective carrier substrate (1360). Carrier substrate set. The respective sensor element (SE) of the respective carrier substrate (1360) of the carrier substrate set is typically located on or in the at least one respective structural element of the at least one respective waveguide (1380, 1880, 2380, 6830, 6980) of the respective carrier substrate (1360). This respective structural element of the respective carrier substrate (1360) of the carrier substrate set has the said respective width and a respective center of this respective structural element of the respective carrier substrate (1360) at half its respective width. Due to manufacturing scatter, the respective center of the at least one respective sensor element of the respective carrier substrate (1360) of the carrier substrate set is typically offset by a respective offset relative to the respective center of this respective structural element of the respective carrier substrate (1360). The C _pk determined from these respective offsets of the respective carrier substrates (1360) as respective scatters and the average width of the respective width of the at least one respective structural element of the respective carrier substrates (1360) as a tolerance interval for the offset of the respective sensor elements (SE) relative to the respective structural element -Value for the entirety of the carrier substrates (1360) of this carrier substrate set is better than 1.66 when using the, in particular self-adjusting, manufacturing techniques presented here and the processes are used correctly and is therefore suitable for manufacturing in automotive supply chains.

The respective structural elements of the respective carrier substrates (1360) of the carrier substrate set measured to determine the C _pk value of the carrier substrate set are preferably the same respective structures ture elements in all respective carrier substrates of the carrier substrates (1360) of the carrier substrate set. The respective sensor elements (SE) of the respective carrier substrates (1360) of the carrier substrate set measured to determine the C _pk value of the carrier substrate set are preferably the same respective sensor elements (SE) for all respective carrier substrates of the carrier substrates (1360) of the carrier substrate set.

In the sense of the document presented here, a structural element can also be composed of several of the structural elements presented here lying next to one another on the respective carrier substrates (1360).

Of course, a C _pk value can also be formed as a tolerance measure from the widths of the respective sensor elements (SE) of the respective carrier substrates (1360) of the carrier substrate set and the average widths of the structural elements of the respective carrier substrates (1360) of the carrier substrate set, which is also due to the in this The manufacturing process disclosed in the document can be over 1.66. Such carrier substrate sets are therefore part of the disclosure and potential exposure of the document presented here.

General sensor systems

As already indicated, the high-frequency spectrum analyzer system can also be used as a general sensor system. Such a general sensor system typically includes a control device (CTR) for setting a magnetic flux density (B _Σ , B _ad ) as a first measurement parameter within a first measurement parameter interval and for setting a microwave frequency (ω _µW ) of a microwave signal (µW) as a second measurement parameter within a second measurement parameter interval. The general sensor system preferably further has a sensor element (SE, 5) with a plurality of crystals and/or diamond nanocrystals (ND), the plurality of crystals and/or diamond nanocrystals (ND) being in one Carrier material (TM) of the sensor element (SE) are embedded and are typically oriented essentially differently. The plurality of crystals and/or diamond nanocrystals (ND) preferably have paramagnetic centers, in particular NV centers in diamond as diamond nanocrystals (ND). The sensor system preferably has a pump radiation source in the form of a light source (LED), the pump radiation source preferably being set up to include the paramagnetic centers of the plurality of crystals and/or the diamond nanocrystals (ND) of the sensor element (SE, 5). Pump radiation (LB) to irradiate a pump radiation wavelength (λ _pmp ). The paramagnetic centers of the multitude of crystals and/or diamond nanocrystals (ND) of the sensor element (SE, 5) emit fluorescent radiation (FL) with a fluorescent radiation wavelength (λ _pmp ) when irradiated with the pump radiation (LB) of the pump radiation wavelength (λ pmp ). λ _fl ). The sensor system (SE) is preferably set up to parameterize its device parts for measuring a set measuring point from a first value of the first measurement parameter and a second value of the second measurement parameter. The sensor element (SE) is preferably set up to determine a sensor element measured value for this set measuring point, the sensor element measured value _being the fluorescence intensity value of the intensity I (t) of the fluorescence radiation (FL) and/or an _attenuation of the intensity I (t ) corresponds to the fluorescence radiation (FL) and/or depends on it. The sensor element measurement value typically depends on the first measurement parameter and the second measurement parameter. Typically, the sensor element measurement value forms a V formation of a lower resonance edge (522) and an upper resonance edge (525) in an XY plane with the first measurement value as the X coordinate and the second measurement value as the Y coordinate. (Please refer 2 ) The V-formation (522, 525) has a tip (530) of the V-formation, which may also lie in the area that can no longer be measured and therefore may only be accessible indirectly. The control device (CTR) is preferably set up to use a computer-implemented method, in particular to determine the next measuring point with as few iterations as possible, the next measuring point preferably comprising a next first measurement parameter and a next second measurement parameter.

• - ein computerimplementiertes Machine-Learning-Verfahren und/oder
• - ein computerimplementiertes Verfahren zur Anwendung computerimplementierter Optimierungsalgorithmen und/oder
• - ein computerimplementiertes Machine-Learning-Verfahren unter Anwendung eines Verfahrens der computerimplementierten Bayes'schen Optimierung und/oder
• - ein computerimplementiertes Verfahren der computerimplementierten Random-Forest-Regression und/oder
• - ein computerimplementiertes Verfahren der computerimplementierten Gaussian-Process-Regression und/oder
• - ein computerimplementiertes Verfahren unter Verwendung eines computerimplementierten neuronalen Netzwerkmodells und/oder.
• - ein computerimplementiertes Verfahren der computerimplementierten gradientenbasierten Optimierung und/oder
• - ein computerimplementiertes Verfahren des computerimplementierten Gradientenabstiegs und/oder
• - ein computerimplementiertes Verfahren des computerimplementierten stochastischen Gradientenabstiegs und/oder
• - ein computerimplementiertes Verfahren des computerimplementierten Simulated-Annealings und/oder
• - ein computerimplementiertes Verfahren der computerimplementierten Partikelschwarmoptimierung und/oder
• - ein computerimplementiertes Verfahren unter Verwendung computerimplementierter genetischer Algorithmen und/oder
• - ein computerimplementiertes Verfahren unter Verwendung eines computerimplementierten Verfahrens der Bayes'schen Optimierung und/oder
• - ein computerimplementiertes Verfahren des computerimplementierten Nelder-Mead-Algorithmus.

In a further embodiment of the sensor system, the control device (CTR) therefore preferably uses one or more of the following computer-implemented methods as a computer-implemented method:

• - a computer-implemented machine learning method and/or
• - a computer-implemented method for applying computer-implemented optimization algorithms and/or
• - a computer-implemented machine learning method using a computer-implemented Bayesian optimization method and/or
• - a computer-implemented method of computer-implemented random forest regression and/or
• - a computer-implemented method of computer-implemented Gaussian process regression and/or
• - a computer-implemented method using a computer-implemented neural network model and/or.
• - a computer-implemented method of computer-implemented gradient-based optimization and/or
• - a computer-implemented method of computer-implemented gradient descent and/or
• - a computer-implemented method of computer-implemented stochastic gradient descent and/or
• - a computer-implemented method of computer-implemented simulated annealing and/or
• - a computer-implemented method of computer-implemented particle swarm optimization and/or
• - a computer-implemented method using computer-implemented genetic algorithms and/or
• - a computer-implemented method using a computer-implemented Bayesian optimization method and/or
• - a computer-implemented method of the computer-implemented Nelder-Mead algorithm.

As already indicated, the high-frequency spectrum analyzer system can also be used as a general sensor system in a different form. Such a general sensor system includes, for example, a control device (CTR) for setting a magnetic flux density (B _Σ , B _ad ) as a first measurement parameter within a first measurement parameter interval and for setting a microwave frequency (ω _µW ) of a microwave signal (µW) as a second measurement parameter within a second measurement parameter interval. The general sensor system preferably again has a sensor element (SE, 5) with a plurality of crystals and/or diamond nanocrystals (ND), the plurality of crystals and/or diamond nanocrystals (ND) preferably in one Carrier material (TM) of the sensor element (SE) are embedded and the plurality of crystals and / or diamond nanocrystals (ND) are preferably oriented essentially differently. The large number of crystals and/or diamond nanocrystals (ND) preferably have paramagnetic centers, in particular NV centers. Preferably, the general sensor system typically has a pump radiation source in the form of a light source (LED), the pump radiation source preferably being set up to detect the paramagnetic centers of the plurality of crystals and/or diamond nanocrystals (ND) of the sensor element (SE, 5). to irradiate with pump radiation (LB) of the pump radiation wavelength (λ _pmp ), and wherein the paramagnetic centers of the multitude of crystals and / or diamond nano-crystals (ND) of the sensor element (SE, 5) during the irradiation with the pump radiation (LB) the pump radiation wavelength (λ _pmp ) emit a fluorescence radiation (FL) with a fluorescence radiation wavelength (λ _fl ). The general sensor system is preferably set up to parameterize its device parts for measuring a set measuring point from a first value of the first measurement parameter and a second value of the second measurement parameter. Typically, the control device (CTR) is able to set a first measurement parameter within a first measurement parameter interval and to set a second measurement parameter within a second measurement parameter interval. The sensor element (SE) is then preferably set up to determine a sensor element measured value for this set measuring point. The sensor element measurement value preferably corresponds to the fluorescence intensity value of the intensity I _is (t) of the fluorescence radiation (FL) and/or an attenuation of the intensity I _is (t) of the fluorescence radiation (FL) and/or depends on these. Typically, the sensor element measurement value depends on at least the first measurement parameter and the second measurement parameter. The first measurement parameter can be, for example, the total magnetic flux density (B _Σ ) or the additional magnetic flux density (B _ad ), which contributes to the total magnetic flux density (B _Σ ). When measuring in this way with different measuring points from a first measuring parameter value of the first measuring parameter and a second measuring parameter value of the wide measuring parameter, the sensor element measured values recorded over the XY surface of these two measuring parameters form in this XY plane with the first measured value as the X coordinate and the second measured value as Y coordinate a V formation. A lower resonance edge (522) and an upper resonance edge (525) form this V formation. (Please refer 51b) . A key idea presented here The purpose of the document is to recognize the position of this V-formation through pattern recognition and to derive measured values from it, since the size, orientation and structure are essentially already determined at the atomic level and only the position of the tip (530) of this V-formation depends on the microwave frequency (ω _µW ) and the total magnetic flux density (B _Σ ) or the additional magnetic flux density (B _ad ) that contributes to the total magnetic flux density (B _Σ ). This V formation thus has the said tip (530) of the V formation, which can also lie outside the measurable range and whose position is particularly characteristic of the position of the V formation. Typically, the sensor element (SE) delivers the sensor element measured value depending on the set first measurement parameter and the set second measurement parameter. The control device (CTR) is typically set up to use a computer-implemented method for determining the next measurement point, which includes the next first measurement parameter and the next second measurement parameter. For this purpose, the sensor system preferably comprises a system for determining the position of a V formation in the XY plane, the position being defined by the X coordinate of the first measurement parameter and the Y coordinate of the second measurement parameter. The sensor system can also include a system for determining the position (530) of the tip of the V formation in the XY plane, this position also being defined by the associated X coordinate of the first measurement parameter and the associated Y coordinate of the second measurement parameter . The sensor system preferably comprises a memory device (RAM, NVM) for maintaining the thus determined position of the V-formation in the XY plane and/or for maintaining the specific position (530) of the tip of the V-formation and/or functionally equivalent information for the use by a higher-level system. For this purpose, the sensor system preferably comprises a user interface for setting parameters, such as the measurement parameter intervals and/or for retrieving the results of the position (530) of the tip of the V-formation in the XY plane from the first measurement parameter as the X coordinate and the second Measurement parameters as Y coordinates. According to the proposal, this user interface can also be addressed, operated and queried by a device, for example a higher-level computer system. The user interface can also be a machine-machine interface. The user interface may be a web page that the control device (CTR) generates.

As already indicated, the system of the high-frequency spectrum analyzer can also be used as a general sensor system in another third form. Such a general sensor system preferably comprises, for example, a control device (CTR), the general sensor system preferably having a control device (CTR) for setting a magnetic flux density (B _Σ , B _ad ) as the first measurement parameter within a first measurement parameter interval and for setting a microwave frequency (ω _µW ) of a microwave signal (µW) as a second measurement parameter within a second measurement parameter interval. Here too, the general sensor system preferably again has a sensor element (SE, 5) with a large number of crystals and/or diamond nano-crystals (ND), which are typically embedded in a carrier material (TM) of the sensor element (SE). The large number of crystals and/or diamond nanocrystals (ND) are preferably oriented essentially differently. Crystals and/or diamond nanocrystals (ND) of the crystals and/or diamond nanocrystals (ND) preferably have paramagnetic centers, in particular NV centers in diamond. The general sensor system preferably again comprises a pump radiation source in the form of a light source (LED), which supplies the paramagnetic centers of the plurality of crystals and/or diamond nanocrystals (ND) of the sensor element (SE, 5) with pump radiation (LB) of a pump radiation wavelength ( λ _pmp ) can irradiate. As before, the paramagnetic centers of the multitude of crystals and/or diamond nanocrystals (ND) of the sensor element (SE, 5) typically emit fluorescent radiation (FL) when irradiated with the pump radiation (LB) of a pump radiation wavelength (λ _pmp ). with a fluorescent radiation wavelength (λ _fl ). The general sensor system is preferably set up to parameterize its device parts for measuring a set measuring point from a first value of the first measurement parameter and a second value of the second measurement parameter, for example by means of its control device (CTR). Therefore, the control device (CTR) is preferably able to set a first measurement parameter within a first measurement parameter interval and to set a second measurement parameter within a second measurement parameter interval. The sensor element (SE) is typically set up to determine a sensor element measured value for this set measuring point. The sensor element measurement value typically corresponds to the fluorescence intensity value of the intensity I _is (t) of the fluorescence radiation (FL) and/or an attenuation of the intensity I _is (t) of the fluorescence radiation (FL) and/or depends on this. This sensor element measurement value typically depends on the first measurement parameter and second measurement parameter. Typically, the sensor element measurement value forms a V formation of a lower resonance edge (522) and an upper resonance edge (525) in an XY plane with the first measurement value as the X coordinate and the second measurement value as the Y coordinate. In general, the V-formation has a tip (530) of the V-formation, which is also outside the measuring area Chess can lie. In addition, the general sensor system of this embodiment preferably has the sensor element (SE) for determining a sensor element measured value for a set measuring point based on the first measurement parameter and the second measurement parameter. The general sensor system preferably uses a virtual, memory-based, three-dimensional Cartesian coordinate system for entering the measured values of the sensor element (SE) into a database in the memory (RAM, NVM) of the sensor system, the x coordinate on the x axis preferably being determined by the first measurement parameter and the y-coordinate on the y-axis is determined by the second measurement parameter and the z-coordinate on the z-axis is determined by the measured value of the sensor element (SE). Furthermore, the sensor system in this embodiment preferably comprises a position detection unit which is known and which uses the information that the maxima of the magnitude of the gradient of the measured value of the sensor element according to the x coordinate and the y coordinate have a V shape on the XY coordinate. Level, whereby it is typically the task of the sensor system to determine and output the position of the lower tip (530) of this V-formation (522, 525).

In a further embodiment of the previous three embodiments of the sensor system, the control device (CTR) is preferably set up to determine the next measuring point for the next measurement of a sensor element measured value as a function of one or more already existing measured value data sets, such a measured value data set typically being one measuring point and one Sensor element measurement value includes. This enables rapid convergence of the measured values in order to identify the real position of the V-formation, in particular the position of the tip (530) of the V-formation from the lower resonance edge (522) and upper resonance edge (525) and, if necessary, further measured values for the magnetic flux density B and/or the microwave frequency.

In a further embodiment of the four previous embodiments of the sensor system, the control device (CTR) is preferably set up to use the computer-implemented method for determining the next measurement point from a next first measurement parameter and a next second measurement parameter in order to determine the position of the V formation in the XY -Plane to determine and to calculate the position (30) of the tip of the V formation in the XY plane or functionally equivalent information and to keep it available for use by a higher-level system.

In a further embodiment of the five previous embodiments of the sensor system, the control device (CTR) is preferably set up to use the computer-implemented method to determine the position of the V formation in the XY plane from the first measurement parameter as the X coordinate and the second measurement parameter as the Y -Coordinate or a functionally equivalent position information of the V formation and/or a functionally equivalent position information of a feature of the V formation by means of iteration.

In a further embodiment of the six previous versions of the sensor system, the control device (CTR) is preferably set up to carry out the computer-implemented method in such a way that the control device (CTR) uses the computer-implemented method to provide the position information of the V-formation and/or a functionally equivalent position information characteristic of the V formation with as few iterations as possible.

In a further embodiment of the seven previous versions of the sensor system, the control device (CTR) is preferably set up to use the computer-implemented method for determining the position of the tip (30) of the V-formation in the XY plane from the first measurement parameter as the X coordinate and second measurement parameter as Y coordinate or functionally equivalent information.

In a further embodiment of the eight previous embodiments of the sensor system, the control device (CTR) is preferably set up to receive the position information of the V-formation determined in this way and/or a functionally equivalent position information of a feature of the V-formation and/or the position of the tip (30). of the V formation for use by a higher-level system (e.g. 28).

In a further embodiment of the nine previous versions of the sensor system, the control device (CTR) is preferably set up to use the computer-implemented method in combination with the sensor element (SE) to determine the position (30) of the tip of the V-formation and/or a functionally equivalent Determine information based on the first measurement parameters and the second measurement parameters.

In a further embodiment of the ten previous versions of the sensor system, the control device (CTR) is preferably set up to keep the position (30) of the tip of the V-formation and/or the functionally equivalent information available for use by a higher-level system (e.g. 28). This enables, for example, a sensor fusion of this information with data from other sensors, for example in a higher-level system, and the detection of incorrect values by the higher-level system.

In a further embodiment of the sensor system, the program code and/or the program data of the computer-implemented method are stored on a memory-based medium (RAM, NVM). In particular, it is conceivable to be able to exchange this storage medium (RAM, NVM) in order to be able to quickly adapt the sensor system to new circumstances.

Preferably, the control device (CTR) and the memory-based medium (RAM, NVM) are set up to execute this program code of the computer-implemented method using a processor of the control device (CTR). The memory-based medium (RAM, NVM) can include a computer program product, a hard drive, flash memory or another non-volatile storage medium (NVM).

As already indicated, the system of the high-frequency spectrum analyzer can also be used as a general sensor system in another twelfth embodiment. The sensor system includes a storage medium (RAM, NVM) that stores the current values of the first measurement parameter, the second measurement parameter and the sensor element measurement value in order to carry out one of the computer-implemented methods, in particular iteratively. In this embodiment, the control device (CTR) can in particular be set up to carry out a convergence criterion test in the case of an iterative procedure in order to determine whether the calculation of the position of the lower tip (30) of the V-formation in the X-Y plane and/or the Calculation of functionally equivalent information has converged, and the iterations of the computer-implemented method are terminated accordingly.

As already indicated, the system of the high-frequency spectrum analyzer can also be used as a general sensor system in another thirteenth embodiment. The control device (CTR) preferably comprises an error correction and compensation unit which is set up to detect and correct errors in the measurements of the sensor element (SE) in order to more precisely determine the position of the lower tip (30) of the V-formation and/or functionally equivalent information.

As already indicated, the system of the high-frequency spectrum analyzer can also be used as a general sensor system in another twelfth embodiment. The control device (CTR) is preferably set up to apply one of the computer-implemented methods by generating a set of measuring points in the Display information, and then evaluate the measurement points based on the sensor element reading and select the best measurement points for the next iteration.

As already indicated, the system of the high-frequency spectrum analyzer can also be used as a general sensor system in another thirteenth embodiment. The sensor system includes the control device (CTR) with a processor and a memory (RAM, NVM), the memory (RAM, NVM) containing the program code for the computer-implemented method. In this embodiment, the control device (CTR) is preferably set up to retrieve and execute the program code from the memory (RAM, NVM) using its processor. The memory (RAM, NVM) is preferably set up to store further information about the V-formation, such as the size or shape, in order to enable a comprehensive characterization of the V-formation.

1. 1. Bereitstellen eines Halbleitersubstrats (1360), wobei das Halbleitersubstrat (1360) eine oder mehrere mikroelektronischen Schaltungen und einen Metallisierungsstapel mit elektrischen Leitungen, ggf. notwendigen Durchkontaktierungen, Kontakten, Pads und Isolationsschichten etc. an einer seiner Oberflächen aufweist. Besonders wichtig ist in diesem Fall, dass das Halbleitersubstrat (1360) eine Wellenleitung (1380, 1880, 2380, 6830, 6980) an dieser Oberfläche aufweist.
2. 2. Ein weiterer Schritt ist das ganzflächige oder teilweise Beschichten dieser Oberfläche des Halbleitersubstrats (1360) im Bereich der Wellenleitung (1380, 1880, 2380, 6830, 6980) mit einem kolloidalen Lack (KL) der kolloidalen Mischung zur Bildung einer lokalen kolloidalen Lackschicht, wobei der kolloidale Lack (KL) ein Trägermaterial (TM) und Kristalle und/oder Diamant-Nano-Kristalle (ND) aufweist, die alle oder in Teilen paramagnetische Zentren, insbesondere NV-Zentren in Diamant, umfassen, die wiederum bei Bestrahlung mit einer Pumpstrahlung (LB) mit einer Pumpstrahlungswellenlänge (λ_pmp) Fluoreszenzstrahlung (FL) mit einer Fluoreszenzstrahlungswellenlänge (λ_fl) emittieren.
3. 3. Es folgt dann die Strukturierung der lokalen kolloidalen Lackschicht. Diese Strukturierung kann grundsätzlich auf zwei Arten als Positiv-Prozess oder Negativ-Prozess erfolgen. Ein weiterer Schritt betrifft das Durchführen zumindest eines dieser beiden folgenden Strukturierungsprozesse:
   • 3.1. Negativ Verfahren mit den Schritten:
     • 3.1.1. Lokal begrenztes Bestrahlen der lokalen kolloidalen Lackschicht des kolloidalen Lacks (KL) mit einer elektromagnetischen Aushärtestrahlung (4910) einer Aushärtewellenlänge (λ_H), sodass die das Trägermaterial (TM) der lokalen kolloidalen Lackschicht des einem kolloidalen Lacks (KL) aushärtet. Dabei ist das ausgehärtete Trägermaterial (TM) vorzugsweise für elektromagnetische Strahlung der Pumpstrahlungswellenlänge (λ_pmp) im Wesentlichen transparent und für elektromagnetische Strahlung der Fluoreszenzstrahlungswellenlänge (λ_fl) im Wesentlichen transparent.
     • 3.1.2. Entfernen der Bereiche der lokalen kolloidalen Lackschicht des einem kolloidalen Lacks (KL), deren Trägermaterial (TM) nicht ausgehärteten ist, um ein oder mehrere Sensorelemente (SE) auszuformen.
   • 3.2. Positiv Verfahren
     • 3.2.1. Vorhärten der lokalen kolloidalen Lackschicht;
     • 3.2.2. Lokal begrenztes Bestrahlen der vorgehärteten lokalen kolloidalen Lackschicht des einem kolloidalen Lacks (KL) mit einer elektromagnetischen Belichtungsstrahlung (4910) einer Belichtungswellenlänge (λ_B), sodass die das Trägermaterial (TM) der lokalen kolloidalen Lackschicht des einem kolloidalen Lacks (KL) angreifbar wird,
     • 3.2.3. Entfernen der Bereiche der belichteten und damit angreifbar gewordenen lokalen kolloidalen Lackschicht des einem kolloidalen Lacks (KL) beispielsweise mittels eines Lösungsmittels oder eines Entwicklers,
     • 3.2.4. Aushärten der nicht entfernten Bereiche der nicht belichteten lokalen kolloidalen Lackschicht des einem kolloidalen Lacks (KL), um ein oder mehrere Sensorelemente (SE) auszuformen, wobei das dann ausgehärtete Trägermaterial (TM) für elektromagnetische Strahlung der Pumpstrahlungswellenlänge (λ_pmp) im Wesentlichen transparent ist und wobei das dann ausgehärtete Trägermaterial (TM) für elektromagnetische Strahlung der Fluoreszenzstrahlungswellenlänge (λ_fl) im Wesentlichen transparent ist.

Finally, the document presented here describes a method for producing a monolithically integrated sensor system. The proposed procedure includes the steps:

1. 1. Providing a semiconductor substrate (1360), wherein the semiconductor substrate (1360) has one or more microelectronic circuits and a metallization stack with electrical lines, possibly necessary vias, contacts, pads and insulation layers, etc. on one of its surfaces. It is particularly important in this case that the semiconductor substrate (1360) has a waveguide (1380, 1880, 2380, 6830, 6980) on this surface.
2. 2. A further step is the entire or partial coating of this surface of the semiconductor substrate (1360) in the area of the waveguide (1380, 1880, 2380, 6830, 6980) with a colloidal lacquer (KL) of the colloidal mixture to form a local colloidal lacquer layer, wherein the colloidal varnish (KL) has a carrier material (TM) and crystals and/or diamond nano-crystals (ND), all or some of which comprise paramagnetic centers, in particular NV centers in diamond, which in turn become active upon irradiation with a Pump radiation (LB) with a pump radiation wavelength (λ _pmp ) emit fluorescence radiation (FL) with a fluorescence radiation wavelength (λ _fl ).
3. 3. The local colloidal lacquer layer is then structured. This structuring can basically take place in two ways as a positive process or negative process. A further step involves carrying out at least one of these two following structuring processes:
   • 3.1. Negative procedure with the steps:
     • 3.1.1. Locally limited irradiation of the local colloidal lacquer layer of the colloidal lacquer (KL) with an electromagnetic curing radiation (4910) of a curing wavelength (λ _H ), so that the carrier material (TM) of the local colloidal lacquer layer of a colloidal lacquer (KL) hardens. The cured carrier material (TM) is preferably essentially transparent to electromagnetic radiation of the pump radiation wavelength (λ _pmp ) and essentially transparent to electromagnetic radiation of the fluorescence radiation wavelength (λ _fl ).
     • 3.1.2. Removing the areas of the local colloidal lacquer layer of a colloidal lacquer (KL) whose carrier material (TM) has not hardened in order to form one or more sensor elements (SE).
   • 3.2. Positive procedure
     • 3.2.1. Pre-curing of the local colloidal lacquer layer;
     • 3.2.2. Locally limited irradiation of the pre-hardened local colloidal lacquer layer of a colloidal lacquer (KL) with an electromagnetic exposure radiation (4910) of an exposure wavelength (λ _B ), so that the carrier material (TM) of the local colloidal lacquer layer of a colloidal lacquer (KL) becomes vulnerable,
     • 3.2.3. Removing the areas of the exposed and therefore vulnerable local colloidal lacquer layer of a colloidal lacquer (KL), for example using a solvent or a developer,
     • 3.2.4. Curing the unremoved areas of the non-exposed local colloidal lacquer layer of a colloidal lacquer (KL) in order to form one or more sensor elements (SE), the then cured carrier material (TM) being essentially transparent for electromagnetic radiation of the pump radiation wavelength (λ _pmp ). and wherein the then cured carrier material (TM) is essentially transparent to electromagnetic radiation of the fluorescent radiation wavelength (λ _fl ).

The microelectronic circuits on the semiconductor substrate (1360) preferably comprise one or more device elements of the sensor system and/or one or more sensor channels and/or a control device (CTR) and/or one or more memories (RAM; NVM), and/or one or several magnetic field generating means (L _c ) and / or in or more signal sources (µWG, G1, G2, LDRV,) and / or one or more pattern recognition devices (MEV) and / or one or more micro-optical device parts (LWL1, LWL2) and / or a or several microfluidic and/or one or more micromechanical functional elements.

• Verstärker: Verstärker werden verwendet, um elektrische Signale zu verstärken und/oder zu filtern und/oder zu mischen und/oder zu addieren etc., entweder in analoger oder digitaler Form. Beispiele sind Operationsverstärker (Op-Amps) und differenzielle Verstärker.
• Komparatoren: Komparatoren vergleichen zwei Eingangssignale und erzeugen ein Ausgangssignal, das angibt, ob das eine Signal größer oder kleiner als das andere ist. Sie werden häufig in Schwellwertdetektoren und Analog-Digital-Wandlern verwendet.
• Filter: Filter ermöglichen es, bestimmte Frequenzen eines Signals zu verstärken oder zu unterdrücken oder bestimmte Signalverlaufsstrukturen zu erkennen. Beispiele sind Tiefpassfilter, Hochpassfilter, Bandpassfilter und Notchfilter, Kalman-Filter, Optimalfilter, Matched Filter etc.
• Analog-Digital-Wandler (ADC): ADCs wandeln analoge Signale in digitale Werte um. Sie sind wesentlich für die digitale Verarbeitung analoger Signale und werden in vielen Anwendungen eingesetzt, z.B. in der Tonaufnahme, Sensortechnik und Kommunikation.
• Digital-Analog-Wandler (DAC): DACs wandeln digitale Werte in analoge Signale um. Sie werden verwendet, um digitale Informationen in eine kontinuierliche analoge Form zu übertragen, z.B. in Audioverstärkern und Kommunikationssystemen.
• Oszillatoren: Oszillatoren erzeugen periodische Signale, die in vielen Anwendungen wie Taktgeber, Zeitgeber und Taktsynchronisation benötigt werden.
• Multiplexer: Multiplexer ermöglichen die Auswahl und Weiterleitung eines bestimmten Eingangssignals aus einer Gruppe von Signalen zu einem Ausgang. Sie werden oft verwendet, um zwischen verschiedenen Datenquellen oder Adressen umzuschalten. Es kann sich auch um Digital-Multiplexer und/oder AnalogMultiplexer handeln.
• Schieberegister: Schieberegister sind sequenzielle Schaltungen, die in der Lage sind, eine Reihe von Datenbits zu speichern und diese seriell oder parallel zu verschieben. Sie werden in vielen Anwendungen wie Speichererweiterungen, Datenverschiebung und Signalverarbeitung verwendet.
• Phasendetektoren: Phasendetektoren werden verwendet, um die Phasendifferenz zwischen zwei Signalen zu messen. Sie sind wichtig in Phasenregelschleifen (PLL) und Frequenzsynthesizern.
• Spannungsreferenzen: Spannungsreferenzen erzeugen präzise und stabile Referenzspannungen, die in vielen Schaltungen als Bezugsspannungen dienen, beispielsweise in ADCs, DACs und Regelkreisen.
• Phasenregelschleifen (PLL): PLLs werden verwendet, um eine präzise Phasen- und Frequenzsynchronisation zwischen verschiedenen Signalen zu erreichen. Sie finden Anwendung in Kommunikationssystemen, Taktgeneratoren und Frequenzsynthesizern.
• Taktgeneratoren: Taktgeneratoren erzeugen präzise und stabile Taktimpulse, die zur Synchronisierung von Schaltungen und zum Zeitmultiplexing verwendet werden. Sie spielen eine entscheidende Rolle in digitalen Schaltungen und Kommunikationssystemen.
• Schaltregler: Schaltregler sind elektronische Schaltungen, die die Spannung oder den Strom effizient umwandeln oder regeln können. Sie werden in Stromversorgungen, Batterieladegeräten und energieeffizienten Systemen eingesetzt.
• Komparator-basierte Analog-Digital-Wandler (Flash ADC): Flash-ADCs sind schnelle Analog-Digital-Wandler, die das Prinzip der Komparator-Schaltung nutzen, um das Eingangssignal zu quantisieren. Sie sind in Anwendungen mit hohen Abtastraten und schnellen Signalen weit verbreitet.
• Stromquellen und Spiegelschaltungen: Stromquellen und Spiegelschaltungen werden verwendet, um stabile Stromreferenzen zu erzeugen und zu spiegeln. Sie sind wichtig in analogen Schaltungen wie Verstärkern und Differenzverstärkern.
• Operationsverstärker-Schaltungen: Operationsverstärker (Op-Amps) werden in vielen analogen Schaltungen eingesetzt, um Verstärkung, Filterung, Verstärkung und andere Funktionen auszuführen. Sie sind ein grundlegender Baustein in der analogen Signalverarbeitung.
• Schwellwertdetektoren: Schwellwertdetektoren vergleichen ein Eingangssignal mit einem festgelegten Schwellenwert und geben ein digitales Signal basierend auf diesem Vergleich aus. Sie finden Anwendung in der Datenerkennung, Signalverarbeitung und Kommunikation.
• Integratoren und Differentiatoren: Integratoren und Differentiatoren sind Schaltungen, die Integration und Differentiation von analogen Signalen ermöglichen. Sie werden in vielen Anwendungen wie Filterdesign, Audioverarbeitung und Regelungstechnik eingesetzt.
• Spannungsfolger: Spannungsfolger (Buffer) sind Verstärkerschaltungen mit einer Verstärkung von etwa 1, die dazu dienen, das Ausgangssignal zu isolieren und den Strombedarf anderer Schaltungen zu senken.
• Analogschalter: Analogschalter ermöglichen es, analoge Signale zu steuern und zwischen verschiedenen Schaltungspfaden umzuschalten. Sie finden Anwendung in analogen Multiplexern,
• Pufferverstärker: Pufferverstärker dienen dazu, die Impedanz zwischen verschiedenen Schaltungsbereichen anzupassen und Signalverluste zu minimieren. Sie werden oft verwendet, um Signalquellen mit unterschiedlichen Impedanzen zu verbinden.
• Schaltregelkreise (Regler): Schaltregelkreise sind Rückkopplungsschaltungen, die dazu dienen, eine stabile Ausgangsspannung oder einen stabilen Ausgangsstrom aufrechtzuerhalten. Sie werden in Stromversorgungen und Regelkreisen eingesetzt.
• Schmitt-Trigger: Schmitt-Trigger sind Komparatorschaltungen mit Hysterese, die dazu dienen, ein stabiles digitales Ausgangssignal zu erzeugen, das auf Änderungen des Eingangssignals empfindlich reagiert. Sie finden Anwendung in Schwellwertdetektoren, Schaltungen mit Rauschen und Signalverarbeitungsschaltungen.
• Taktsynchronisationsschaltungen: Taktsynchronisationsschaltungen werden verwendet, um verschiedene Taktquellen miteinander zu synchronisieren oder um Taktphasenverschiebungen zu erzeugen. Sie sind wichtig in Kommunikationssystemen und synchronen digitalen Schaltungen.
• Taktverteiler: Taktverteiler ermöglichen die Verteilung eines Taktimpulses auf mehrere Schaltungsteile. Sie werden verwendet, um mehrere synchronisierte Schaltungen zu steuern und zu synchronisieren.
• Digitallogikschaltungen: Digitale Logikschaltungen wie AND-Gatter, OR-Gatter, NAND-Gatter und NOR-Gatter werden verwendet, um logische Operationen auf digitalen Signalen auszuführen. Sie sind grundlegende Bausteine in digitalen Schaltungen und Prozessoren.
• Schwellwertwandlerschaltungen: Schwellwertwandler dienen dazu, analoge Signale in digitale Signale umzuwandeln, indem sie die Signalamplitude mit einem festgelegten Schwellenwert vergleichen. Sie werden in der Signalverarbeitung und Kommunikationstechnik verwendet.
• Bandlückenreferenzen: Bandlückenreferenzen sind präzise Spannungsreferenzen, die unempfindlich gegenüber Versorgungsspannungsschwankungen sind. Sie werden verwendet, um stabile Referenzspannungen in analogen Schaltungen bereitzustellen.
• Schaltungen zur Leistungsverstärkung: Leistungsverstärkerschaltungen werden verwendet, um hohe Leistungen in einer Schaltung zu liefern, z. B. für Audioverstärker, Verstärker in drahtlosen Kommunikationssystemen und Leistungsumrichter.
• Reset-Schaltungen: Diese setzen die mikrointegrierte Schaltung bei einem Neustart oder einem verlust der Betriebsspannung und ähnlichen Störungen zurück.
• Phasenschieber: Phasenschieber sind Schaltungen, die die Phasenlage eines Signals ändern können. Sie finden Anwendung in Phasenregelschleifen, Kommunikationssystemen und Oszillatoren.
• Test-Controller (JATG): Test-Controller (JATG) sind für den Fertigungstest der mikroelektronischen Schaltungen auf dem Halbleitersubstrat (1360) wichtig. Vorzugsweise handelt es sich um einen JATG -Test-Controller (JATG).
• Dieser ist in dem Dokument IEEE Standard for Test Access Port and Boundary-Scan Architecture, IEEE Std 1149.1-2013 (Revision of IEEE Std 1149.1-2001) beschrieben.

Here is a partial list of exemplary simple circuit blocks that are typically found in such mixed-signal circuits using CMOS technology and whose integration into the semiconductor substrate (1360) is conceivable:

• Amplifier: Amplifiers are used to amplify and/or filter and/or mix and/or add etc. electrical signals, either in analog or digital form. Examples are operational amplifiers (op-amps) and differential amplifiers.
• Comparators: Comparators compare two input signals and produce an output signal that indicates whether one signal is greater or less than the other. They are often used in threshold detectors and analog-to-digital converters.
• Filters: Filters make it possible to amplify or suppress certain frequencies of a signal or to recognize certain signal waveform structures. Examples are low-pass filters, high-pass filters, band-pass filters and notch filters, Kalman filters, optimal filters, matched filters, etc.
• Analog-to-digital converters (ADC): ADCs convert analog signals into digital values. They are essential for the digital processing of analog signals and are used in many applications, such as sound recording, sensor technology and communication.
• Digital-to-analog converters (DAC): DACs convert digital values into analog signals. They are used to transmit digital information into a continuous analog form, for example in audio amplifiers and communication systems.
• Oscillators: Oscillators produce periodic signals needed in many applications such as clocks, timers and clock synchronization.
• Multiplexer: Multiplexers allow the selection and routing of a specific input signal from a group of signals to an output. They are often used to switch between different data sources or addresses. They can also be digital multiplexers and/or analog multiplexers.
• Shift registers: Shift registers are sequential circuits capable of storing a series of data bits and shifting them in series or parallel. They are used in many applications such as memory expansion, data movement and signal processing.
• Phase Detectors: Phase detectors are used to measure the phase difference between two signals. They are important in phase locked loops (PLL) and frequency synthesizers.
• Voltage references: Voltage references create precise and stable reference voltages that serve as reference voltages in many circuits, such as ADCs, DACs and control circuits.
• Phase Locked Loops (PLL): PLLs are used to achieve precise phase and frequency synchronization between different signals. They are used in communication systems, clock generators and frequency synthesizers.
• Clock Generators: Clock generators produce precise and stable clock pulses that are used for circuit synchronization and time division multiplexing. They play a crucial role in digital circuits and communication systems.
• Switching regulators: Switching regulators are electronic circuits that can convert or regulate voltage or current efficiently. They are used in power supplies, battery chargers and energy efficient systems.
• Comparator-based analog-to-digital converters (Flash ADC): Flash ADCs are fast analog-to-digital converters that use the principle of the comparator circuit to quantize the input signal. They are widely used in applications with high sampling rates and fast signals.
• Current sources and mirror circuits: Current sources and mirror circuits are used to create and mirror stable current references. They are important in analog circuits such as amplifiers and differential amplifiers.
• Operational Amplifier Circuits: Operational amplifiers (op amps) are used in many analog circuits to perform amplification, filtering, amplification, and other functions. They are a fundamental building block in analog signal processing.
• Threshold detectors: Threshold detectors compare an input signal to a specified threshold and output a digital signal based on this comparison. They find application in data detection, signal processing and communication.
• Integrators and Differentiators: Integrators and differentiators are circuits that enable integration and differentiation of analog signals. They are used in many applications such as filter design, audio processing and control engineering.
• Voltage Followers: Voltage followers (buffers) are amplifier circuits with a gain of approximately 1 that are used to isolate the output signal and reduce the power requirements of other circuits.
• Analog Switches: Analog switches allow you to control analog signals and switch between different circuit paths. They are used in analog multiplexers,
• Buffer amplifiers: Buffer amplifiers are used to adjust the impedance between different circuit areas and minimize signal losses. They are often used to connect signal sources with different impedances.
• Switching control loops (regulators): Switching control loops are feedback circuits designed to maintain a stable output voltage or current. They are used in power supplies and control circuits.
• Schmitt Triggers: Schmitt triggers are comparator circuits with hysteresis designed to produce a stable digital output signal that is sensitive to changes in the input signal. They find application in threshold detectors, noise circuits and signal processing circuits.
• Clock Synchronization Circuits: Clock synchronization circuits are used to synchronize different clock sources with each other or to create clock phase shifts. They are important in communication systems and synchronous digital circuits.
• Clock distributor: Clock distributors enable the distribution of a clock pulse across several circuit parts. They are used to control and synchronize multiple synchronized circuits.
• Digital Logic Circuits: Digital logic circuits such as AND gates, OR gates, NAND gates and NOR gates are used to perform logical operations on digital signals. They are fundamental building blocks in digital circuits and processors.
• Threshold converter circuits: Threshold converters are used to convert analog signals into digital signals by comparing the signal amplitude with a specified threshold value. They are used in signal processing and communication technology.
• Bandgap References: Bandgap references are precise voltage references that are insensitive to supply voltage fluctuations. They are used to provide stable reference voltages in analog circuits.
• Power Amplification Circuits: Power amplifier circuits are used to deliver high powers in a circuit e.g. B. for audio amplifiers, amplifiers in wireless communication systems and power converters.
• Reset circuits: These reset the micro-integrated circuit in the event of a restart or loss of operating voltage and similar malfunctions.
• Phase shifters: Phase shifters are circuits that can change the phase of a signal. They are used in phase locked loops, communication systems and oscillators.
• Test Controller (JATG): Test controllers (JATG) are important for the manufacturing test of the microelectronic circuits on the semiconductor substrate (1360). It is preferably a JATG test controller (JATG).
• This is described in the document IEEE Standard for Test Access Port and Boundary-Scan Architecture, IEEE Std 1149.1-2013 (Revision of IEEE Std 1149.1-2001).

• - IEEE Standard for Reduced-Pin and Enhanced-Functionality Test Access Port and Boundary-Scan Architecture IEEE Std 1149.7-2009
• - IEEE Supplement to Standard Test Access Port and Boundary-Scan Architecture (1149.1) IEEE Std 1149.1b-1994
• - IEEE Standard for Reduced-Pin and Enhanced-Functionality Test Access Port and Boundary-Scan Architecture, IEEE Std 1149.7-2022 (Revision of IEEE Std 1149.7-2009)
• - IEEE Standard for Access and Control of Instrumentation Embedded within a Semiconductor Device, IEEE Std 1687-2014

zur Information hin. Der Zugriff auf den Test-Controller (JATG) erfolgt bevorzugt über den JATG -Test-Bus (TB).In addition, the document presented here refers to the standards

• - IEEE Standard for Reduced-Pin and Enhanced-Functionality Test Access Port and Boundary-Scan Architecture IEEE Std 1149.7-2009
• - IEEE Supplement to Standard Test Access Port and Boundary-Scan Architecture (1149.1) IEEE Std 1149.1b-1994
• - IEEE Standard for Reduced-Pin and Enhanced-Functionality Test Access Port and Boundary-Scan Architecture, IEEE Std 1149.7-2022 (Revision of IEEE Std 1149.7-2009)
• - IEEE Standard for Access and Control of Instrumentation Embedded within a Semiconductor Device, IEEE Std 1687-2014

for information. Access to the test controller (JATG) is preferably via the JATG test bus (TB).

• https://de.wikipedia.org/wiki/Joint_Test_Action_Group
• https://www.corelis.com/education/tutorials/boundary-scan/

The explanation of the functionality of a JATG test interface from the prior art is omitted here. The document presented here refers to the texts as an example:

• https://de.wikipedia.org/wiki/Joint_Test_Action_Group
• https://www.corelis.com/education/tutorials/boundary-scan/

• - Eine Lichtquelle (LED) zur Bestrahlung eines oder mehrerer paramagnetischer Zentren mit Pumpstrahlung (LB) einer Pumpstrahlungswellenlänge (λ_pmp) und/oder
• - ein oder mehrere paramagnetisches Zentren, insbesondere ein oder mehrere NV-Zentren, durch Bestrahlung mit Pumpstrahlung (LB) einer Pumpstrahlungswellenlänge (λ_pmp) einer Lichtquelle (LED), die von einem Datenregister (DR) und/oder Instruktionsregister (IR) des Test-Controllers (JTAG), insbesondere des IEEE 1149 JATG-Test-Controller (JTAG), gesteuert werden kann, und/oder
• - ein oder mehrere paramagnetische Zentren, insbesondere ein oder mehrere NV-Zentren, durch Erfassen der Fluoreszenzstrahlung (FL) dieses einen paramagnetischen Zentrums oder dieser mehreren paramagnetischen Zentren, insbesondere dieses einen NV-Zentrums oder dieser mehreren NV-Zentren, mittels eines oder mehrerer Fotodetektoren (PD), deren Empfängerausgangssignale (S0) von einem oder mehreren Schaltungsteilen der mikroelektronischen Schaltung gewandelt werden, sodass der Test-Controller(JTAG), insbesondere der IEEE 1149 JATG-Test-Controller (JTAG), einen oder mehrere Werte insbesondere mittels eines Datenregisters (DR) des JATG-Test-Controllers (JATG) erfassen können, die von der Fluoreszenzstrahlung (FL) des einen oder der mehreren paramagnetischen Zentren, insbesondere des einen oder der mehreren NV-Zentren abhängen und/oder
• - eine Datenschnittstelle, über die der Test-Controller (JTAG), insbesondere der IEEE 1149 JATG-Test-Controller (JTAG), einen oder mehrere erfasste Werte ausgeben können, die von der Fluoreszenzstrahlung (FL) eines oder der mehrerer paramagnetischen Zentren, insbesondere des einen oder der mehreren NV-Zentren abhängen.

It is a further idea of the document presented here that the proposed microelectronic circuit has a test interface, preferably a JATG test interface according to one of the IEEE JATG test standards, and a test controller, preferably an IEEE 1149 JATG test interface. Controller (JATG), which can control or read out at least one of the following functional elements of the sensor system via a data register (DR) and/or an instruction register (IR) of the JATG test controller (JATG):

• - A light source (LED) for irradiating one or more paramagnetic centers with pump radiation (LB) of a pump radiation wavelength (λ _pmp ) and/or
• - one or more paramagnetic centers, in particular one or more NV centers, by irradiation with pump radiation (LB) of a pump radiation wavelength (λ _pmp ) of a light source (LED) which comes from a data register (DR) and / or instruction register (IR) of the test -Controller (JTAG), in particular the IEEE 1149 JATG test controller (JTAG), can be controlled, and / or
• - one or more paramagnetic centers, in particular one or more NV centers, by detecting the fluorescence radiation (FL) of this one paramagnetic center or these several paramagnetic centers, in particular this one NV center or these several NV centers, by means of one or more photodetectors (PD), whose receiver output signals (S0) are converted by one or more circuit parts of the microelectronic circuit, so that the test controller (JTAG), in particular the IEEE 1149 JATG test controller (JTAG), one or more values, in particular by means of a data register (DR) of the JATG test controller (JATG), which depend on the fluorescence radiation (FL) of the one or more paramagnetic centers, in particular of the one or more NV centers and / or
• - a data interface via which the test controller (JTAG), in particular the IEEE 1149 JATG test controller (JTAG), can output one or more recorded values that come from the fluorescence radiation (FL) of one or more paramagnetic centers, in particular of the one or more NV centers.

This allows a production test to be carried out during microintegration of the sensor system based on paramagnetic centers and/or NV centers. The microintegration can take place monolithically or as a microsystem.

Circuit system with multiple correlator

In a further embodiment, the sensor system comprises a control device (CTR), a first signal generator (G1), a light source (LED), a second signal generator (G2), a photodetector (PD), a sensor element (SE) with crystals and/or diamond -Nano-crystals (ND) with paramagnetic centers and/or NV centers in diamond, a waveguide (1380, 1880, 2380, 6830, 6980) and a microwave signal source (µWG). The first signal generator (G1) generates an LED modulation signal (S5w). The second signal generator (G2) generates a microwave modulation signal (S5m). The light source (LED) generates a pump radiation (LB) and, modulated with the modulated pump radiation (LB), irradiates the paramagnetic centers and/or NV centers in diamond depending on the LED modulation signal. The microwave signal source (µWG) generates a microwave signal (µW) and feeds the microwave signal (µW) modulated into the waveguide (1380, 1880, 2380, 6830, 6980) depending on the microwave modulation signal (S5m). The waveguide (1380, 1880, 2380, 6830, 6980) irradiates the paramagnetic centers and/or NV centers in diamond with the modulated microwave signal (µW). Depending on the modulated microwave signal (µW) and depending on the pump radiation (LB), paramagnetic centers and/or NV centers in diamond emit fluorescence radiation (FL). The photodetector (PD) detects the fluorescent radiation (FL) emitted by the paramagnetic centers and/or NV centers in diamond and, depending on this, forms a receiver output signal (S0). A multiple correlator (LIV) or a functionally equivalent device correlates the receiver output signal (S0) or a signal derived therefrom with the LED modulation signal (S5w) and the microwave modulation signal (S5m), in particular through hardware-assisted formation of an L3 product, to form a one-dimensional or multi-dimensional one Filter output signal (S4). The sensor system uses the filter output signal (S4) and/or a signal derived from it as a measurement result or keeps it ready or outputs it to a higher-level system.

vector sensor element channel

A vector sensor element channel can thus be defined, which includes essential parts of a sensor system. The vector sensor element channel preferably has a first signal generator (G1), which is set up to generate an LED modulation signal (S5w). The vectorial sensor element channel can alternatively have a first vectorial signal generator (G1), which comprises a plurality of signal generators (G1_1, G1_2, G1_3, G1_4, G1_5) as first signal generator components and which is set up to generate a vectorial LED modulation signal (S5w) with a plurality of LED Generate modulation signals (S5w_1, S5w_2, S5w_3, S5w_4, S5w_5) as LED modulation signal components. The vectorial sensor element channel can have a transmission signal (S5) or a vectorial transmission signal (S5), comprising a plurality of transmission signals (S5_1, S5_2, S5_3, S5_4, S5_5), as transmission signal components. The vector sensor element channel preferably has a light source driver (LDRV), which is set up to generate the transmission signal (S5) for a light source (LED) as a function of the LED modulation signal (S5w) and preferably the light source (LED) at least temporarily to supply electrical energy, or wherein the vectorial sensor element channel has a vectorial light source driver (LDRV) which comprises a plurality of light source drivers (LDRV_1, LDRV_2, LDRV_3, LDRV_4, LDRV_5) and which is set up to control the transmission signal components (S5_1, S5_2, S5_3, S5_4, S5_5) of the vector transmission signal (S5) for a vector light source (LED) depending on the vector LED modulation signal (S5w) and / or on the LED modulation signal (S5w) and the respective light source components (LED_1, LED_2, LED_3, LED_4, LED_5) of the vector light source (LED) to be supplied with electrical energy at least temporarily. The vector sensor element channel preferably has a light source (LED) which is set up to generate pump radiation (LB) depending on the transmission signal (S5). Typically, the transmission signal (S5) switches the light source (LED) temporarily and/or partially on and temporarily and/or partially off. The vector sensor element channel can have a vector light source (LED), comprising a plurality of light sources (LED_1, LED_2, LED_3, LED_4, LED_5) as light source components, which are preferably set up to generate the vector pump radiation (LB), comprising a plurality of pump radiation components (LB_1, LB_2 , LB_3, LB_4, LB_5), which each generates one of these light source components (LED_1, LED_2, LED_3, LED_4, LED_5), depending on the respective transmission signal components (S5_1, S5_2, S5_3, S5_4, S5_5) of the vector transmission signal (S5). generate. The respective transmission signal components (S5_1, S5_2, S5_3, S5_4, S5_5) of the vector transmission signal (S5) then preferably switch the respective light source components assigned to them (LED_1, LED_2, LED_3, LED_4, LED_5) of the vector light source (LED) temporarily and/or partially on and intermittently and/or partially off. The vectorial sensor element channel typically has a first vectorial optical system that has a first optical functional element (LWL) or a vectorial first optical functional element that includes a plurality of first optical functional elements (LWL_1, LWL_2, LWL_3, LWL_4, LWL_5) as first optical functional element components. The first vector optical system is preferably set up to detect the pump radiation (LB) of the light source (LED) or to detect the vector pump radiation (LB) of the vector light source (LED) in a vectorial manner, preferably each optical functional component (LWL_1, LWL_2 , LWL_3, LWL_4, LWL_5) one or more respective pump radiation components (LB_1, LB_2, LB_3, LB_4, LB_5) of the vector pump radiation (LB) are recorded separately. Furthermore, the first vector optical system is preferably set up to transport the detected pump radiation (LB) to the sensor element (SE) or to transport the respectively detected pump radiation components (LB_1, LB_2, LB_3, LB_4, LB_5) of the pump radiation (LB) to one or more assigned sensor element components (e.g. 1410, 1420, 1430) of the vector sensor element (SE). The vector sensor element (SE) preferably comprises at least two sensor element components (e.g. 1410, 1420, 1430). The first vector optical system is preferably set up to decouple the pump radiation (LB) from the first optical functional element (LWL) or the respective pump radiation component (LB_1, LB_2, LB_3, LB_4, LB_5) of the vector pump radiation (LB) from the respective first optical functional element component (LWL_1, LWL_2, LWL_3, LWL_4, LWL_5) of the first vector optical functional element (LWL). Furthermore, the first vector optical system is preferably set up to irradiate the sensor element (SE) with this pump radiation (LB) or to irradiate one or more sensor element components (e.g. 1410, 1420, 1430) of the vector sensor element (SE) with exactly one or more respective ones To irradiate pump radiation components (LB_1, LB_2, LB_3, LB_4, LB_5) of the vector pump radiation (LB). In this case, exactly one respective pump radiation component (LB_1, LB_2, LB_3, LB_4, LB_5) of the vector pump radiation (LB) preferably irradiates exactly one respective light source component (LED_1, LED_2, LED_3, LED_4, LED_5) of the vector light source (LED), preferably exactly one respective sensor element component (e.g. 1410, 1420, 1430) of the vector sensor element (SE).

• • ein Filterausgangssignal (S4) in Abhängigkeit vom verstärkten Empfängerausgangssignal (S1) bzw. vom digitalisierten Empfängerausgangssignal (S1) und von dem LED-Modulationssignal (S5w) und von dem Mikrowellenmodulationssignal (S5m) zu bilden und
• • Daten des so gebildeten Filterausgangssignals (S4) der Steuervorrichtung (CTR) zur Verfügung zu stellen und/oder
• • Daten des so gebildeten Filterausgangssignals (S4) insbesondere für die Steuervorrichtung (CTR) bereit zu halten und/oder a
• • Daten des so gebildeten Filterausgangssignals (S4) an die Steuervorrichtung (CTR) oder eine andere Vorrichtung (z.B. die Mustererkennungsvorrichtung MEV) insbesondere zur Auswertung zu übertragen

oder wobei der vektorielle Sensorelementkanal mehre Mehrfachkorrelatoren (LIV_1, LIV_2, LIV_3, LIV_4, LIV_5) eines vektoriellen Mehrfachkorrelators (LIV) als Mehrfachkorrelatorkomponenten umfasst, wobei jede der Mehrfachkorrelatorkomponenten (LIV_1, LIV_2, LIV_3, LIV_4, LIV_5) des vektoriellen Mehrfachkorrelators (LIV) jeweils dazu eingerichtet ist,

• • jeweils ein jeweiliges Filterausgangssignal (S4_1, S4_2, S4_3, S4_4, S4_5) als jeweilige Filterausgangssignalkomponente eines gemeinsamen vektoriellen Filterausgangssignals (S4) in jeweiliger Abhängigkeit von der jeweiligen verstärkten Empfängerausgangssignalkomponente (S1_1, S1_2, S1_3, S1_4, S1_5) des vektoriellen verstärkten Empfängerausgangssignals (S1) bzw. in jeweiliger Abhängigkeit von der jeweiligen digitalisierten Empfängerausgangssignalkomponente (S1_1, S1_2, S1_3, S1_4, S1_5) des vektoriellen digitalisierten Empfängerausgangssignals (S1) und in jeweiliger Abhängigkeit von der jeweiligen LED-Modulationssignalkomponente (S5w_1, S5w_2, S5w_3, S5w_4, S5w_5) des vektoriellen LED-Modulationssignal (S5w) und in jeweiliger Abhängigkeit von der jeweiligen Mikrowellenmodulationssignalkomponente (S5m_1, S5m_2, S5m_3, S5m_4, S5m_5) des vektoriellen Mikrowellenmodulationssignals (S5m) zu bilden und
• • Daten des so gebildeten vektoriellen Filterausgangssignals (S4) der Steuervorrichtung (CTR) zur Verfügung zu stellen und/oder
• • Daten des so gebildeten vektoriellen Filterausgangssignals (S4) für die Steuervorrichtung (CTR) bereit zu halten und/oder
• • Daten des so gebildeten vektoriellen Filterausgangssignals (S4) an die Steuervorrichtung (CTR) oder eine andere Vorrichtung (z.B. den Mustererkenner (MEV) insbesondere zur Auswertung zu übertragen.

In one variant, the first vector optical system preferably has a first vector optical waveguide (LWL), which preferably comprises a plurality of first optical waveguides (LWL_1, LWL_2, LWL_3, LWL_4, LWL_5) as first optical waveguide components, for this irradiation of the vectorial sensor element (SE) as such a vectorial first optical functional element. The vectorial sensor element channel preferably has a second vectorial optical system, which has a second optical functional element (LWL) or a vectorial second optical functional element (LWL), which has a plurality of second optical functional elements (LWL_1, LWL_2, LWL_3, LWL_4, LWL_5) as second optical functional element components includes, on. The second vector optical system is preferably set up to detect the fluorescence radiation (FL) of the sensor element (SE) or the sensor elements (SE) by means of the second optical functional element (LWL) or by means of the respective second optical functional element components (LWL_1, LWL_2, LWL_3, LWL_4, LWL_5) of its vectorial second optical functional element (LWL), the respective fluorescence radiation component (FL_!, FL_2, FL3, FL_4, FL_5) of the vectorial fluorescence radiation (FL) of one or more of the respective sensor element components (e.g. 1410, 1420, 1430) of the vectorial Sensor element (SE) to detect. Preferably, exactly one of its respective second optical functional element components (LWL_1, LWL_2, LWL_3, LWL_4, LWL_5) of its vectorial second optical functional element (LWL) detects exactly one respective fluorescence radiation component (FL_1, FL_2, FL3, FL_4, FL_5) of the vectorial fluorescence radiation (FL ) one or more of the respective sensor element components (eg 1410, 1420, 1430) of the vector sensor element (SE). The fluorescence radiation (FL) of the NV centers and/or the paramagnetic centers of the sensor element (SE) comprises a single fluorescence radiation component or the vector fluorescence radiation (FL) comprises the respective fluorescence radiations (FL1, FL_2, FL_3, FL_4, FL_5) of the NV centers and/or the paramagnetic centers of the respective sensor element components (eg 1410, 1420, 1430) of the vector sensor element (SE) as respective fluorescence radiation components (FL_1, FL_2, FL_3, FL_4, FL_5). The second vector optical system is preferably set up to transport fluorescence radiation (FL) from the NV centers and/or the paramagnetic centers of the sensor element (SE) to the photodetector (PD) or to transport the respective fluorescence radiation components (FL_1, FL_2, FL_3, FL_4, FL_5) of the vector fluorescence radiation (FL) is preferably to be transported separately from one another to the respective photodetector components (PD_1, PD_2, PD_3, PD_4, PD_5) of a vector photo detector (PD). The vectorial photodetector (PD) then preferably comprises a plurality of photodetectors (PD_1, PD_2, PD_3, PD_4, PD_5) as respective photodetector components of the vectorial photodetector (PD). Preferably, the second vector optical system is set up to couple out the fluorescence radiation (FL) from the second optical functional element or to extract the respective fluorescence radiation components (FL_1, FL_2, FL_3, FL_4, FL_5) of the vector fluorescence radiation (FL) from the respective second optical functional component ( LWL_1, LWL_2, LWL_3, LWL_4, LWL_5) of the second vector optical functional component (LWL). Furthermore, the second vectorial optical system is preferably set up to irradiate the photodetector (PD) with the coupled-out fluorescence radiation (FL) or to irradiate the respective photodetector component (PD_1, PD_2, PD_3, PD_4, PD_5) of the vectorial photodetector (PD) with one in particular to irradiate the respective fluorescence radiation component (FL_1, FL_2, FL_3, FL_4, FL_5) of the vector fluorescence radiation (FL). The second vector optical system particularly preferably irradiates exactly one respective photodetector component (PD_1, PD_2, PD_3, PD_4, PD_5) of the vector photodetector (PD), preferably with exactly one respective fluorescence radiation component (FL_1, FL_2, FL_3, FL_4, FL_5). vector fluorescence radiation (FL). The second vector optical system preferably comprises further optical functional elements, in particular one or more dichroic mirrors (F1) and/or one or more optical filters (also designated by the function-related reference number F1) in the beam path, which ensure that essentially no pump radiation (LB , LB_1, LB_2, LB_3, LB_4, LB_5) of these or other pump radiation sources (LED, LED_1, LED_2, LED_3, LED_4, LED_5) the photodetector (PD) or the respective photodetector component (PD_1, PD_2, PD_3, PD_4, PD_5) of the photodetector components (PD_1, PD_2, PD_3, PD_4, PD_5) of the vector photodetector (PD). The second vectorial optical system preferably comprises in particular a second optical waveguide (LWL) as such a second optical functional element or in particular a second vectorial optical waveguide (LWL) with a plurality of optical waveguides (LWL_1, LWL_2, LWL_3, LWL_4, LWL_5) as such a second vectorial optical functional element . Typically and most preferably, the second vector optical system may include device parts that are identical to device parts of the first optical system. The document presented here refers to the figures and the associated descriptions. The vectorial sensor element channel preferably further comprises the photodetector (PD), which typically converts the intensity of the received fluorescent radiation (FL) into a receiver output signal (S0), or the vectorial photodetector (PD) comprising a plurality of photodetectors (PD_1, PD_2, PD_3, PD_4, PD_5) as photodetector components, each of which corresponds to the respective intensity received by the respective photodetectors (PD_1, PD_2, PD_3, PD_4, PD_5). Fluorescence radiation component (FL_1, FL_2, FL_3, FL_4, FL_5) of the vector fluorescence radiation (FL) into a respective receiver output signal (S0_1, S0_2, S0_3, S0_4, S0_5) of the respective photodetector (PD_1, PD_2, PD_3, PD_4, PD_5) as a receiver output signal component vectorial receiver output signal (S0) of the vectorial photodetector (PD). The vectorial sensor element channel preferably further comprises the receiver output signal (S0) or the vectorial receiver output signal (S0), which contains the receiver output signals (S0_1, S0_2, S0_3, S0_4, S0_5) as a receiver output signal component of the vectorial receiver output signal (S0). The vectorial sensor element channel preferably has a first amplifier (V1) for amplifying and/or digitizing the receiver output signal (S0) to the amplified receiver output signal (S1) or to the digitized receiver output signal (S1) or a first vectorial amplifier (V1) comprising a plurality of first amplifiers ( V1_1, V1_2, V1_3, V1_4, V1_5) as first amplifier components of the first vector amplifier (V1) for the respective amplification and/or respective digitization of a respective receiver output signal component (S0_1, S0_2, S0_3, S0_4, S0_5) of the vector receiver output signal (S0). respective amplified receiver output signal component (S1_1, S1_2, S1_3, S1_4, S1_5) of the vectorial amplified receiver output signal (S1) or to a respective digitized receiver output signal component (S1_1, S1_2, S1_3, S1_4, S1_5) of the vectorial digitized receiver output signal (S1). In addition, and in contrast to the prior art, the vectorial sensor element channel preferably includes a multiple correlator (LIV), which is preferably set up to

• • to form a filter output signal (S4) depending on the amplified receiver output signal (S1) or on the digitized receiver output signal (S1) and on the LED modulation signal (S5w) and on the microwave modulation signal (S5m) and
• • To make data of the filter output signal (S4) formed in this way available to the control device (CTR) and/or
• • To keep data of the filter output signal (S4) formed in this way available, in particular for the control device (CTR) and/or a
• • To transmit data of the filter output signal (S4) formed in this way to the control device (CTR) or another device (eg the pattern recognition device MEV), in particular for evaluation

or wherein the vectorial sensor element channel comprises a plurality of multiple correlators (LIV_1, LIV_2, LIV_3, LIV_4, LIV_5) of a vectorial multiple correlator (LIV) as multiple correlator components, each of the multiple correlator components (LIV_1, LIV_2, LIV_3, LIV_4, LIV_5) of the vectorial multiple correlator (LIV) respectively is set up to

• • a respective filter output signal (S4_1, S4_2, S4_3, S4_4, S4_5) as a respective filter output signal component of a common vectorial filter output signal (S4) depending on the respective amplified receiver output signal component (S1_1, S1_2, S1_3, S1_4, S1_5) of the vectorial amplified receiver output signal ( S1) or depending on the respective digitized receiver output signal component (S1_1, S1_2, S1_3, S1_4, S1_5) of the vectorial digitized receiver output signal (S1) and depending on the respective LED modulation signal component (S5w_1, S5w_2, S5w_3, S5w_4, S5w_5 ) of the vector LED modulation signal (S5w) and depending on the respective microwave modulation signal component (S5m_1, S5m_2, S5m_3, S5m_4, S5m_5) of the vector microwave modulation signal (S5m) and
• • To make data of the vectorial filter output signal (S4) formed in this way available to the control device (CTR) and/or
• • To keep data of the vectorial filter output signal (S4) formed in this way ready for the control device (CTR) and/or
• • To transmit data from the vectorial filter output signal (S4) formed in this way to the control device (CTR) or another device (eg the pattern recognizer (MEV), in particular for evaluation.

The vector sensor element channel can include an optional pattern recognition device (MEV) in addition to accelerating and/or relieving the control device (CTR), for example. Typically, this optional pattern recognition device (MEV) and/or the control device (CTR) are set up to evaluate one or more vectorial filter output signals (S4, S4_1, S4_2, S4_3, S4_4, S4_5) and/or the common vectorial filter output signal (S4) and/or or to analyze and/or process using computer-implemented methods and/or one or more sample data to generate ten sets (MDS) and to make them available and/or to keep them available and/or to hand them over to other external systems and/or internal device parts (CTR).

• • Gruppe 1: Der erste vektorielle Signalgenerator (G1), das vektorielle LED-Modulationssignal (S5w), der vektorielle Lichtquellentreiber (LDRV), das vektorielle Sendesignal (S5), die vektorielle Lichtquelle (LED).
• • Gruppe 2: das erste vektorielle optische System.
• • Gruppe 3: vektorielle Sensorelement (SE).
• • Gruppe 4: das zweite vektorielle optische System
• • Gruppe 5: der vektorielle Fotodetektor (PD), das vektorielle Empfängerausgangssignal (S0), der vektorielle erste Verstärker (V1), das verstärkte Empfängerausgangssignal (S1) bzw. das digitalisierte Empfängerausgangssignal (S1), der vektorielle Mehrfachkorrelators (LIV).

Preferably, at least one, better two, better three, better four, better five of the following device subgroups is designed vectorially:

• • Group 1: The first vector signal generator (G1), the vector LED modulation signal (S5w), the vector light source driver (LDRV), the vector transmit signal (S5), the vector light source (LED).
• • Group 2: the first vector optical system.
• • Group 3: vector sensor element (SE).
• • Group 4: the second vector optical system
• • Group 5: the vector photodetector (PD), the vector receiver output signal (S0), the vector first amplifier (V1), the amplified receiver output signal (S1) or the digitized receiver output signal (S1), the vector multiple correlator (LIV).

This can be summarized in a requirement that preferably at least subgroups of the sensor element channel are designed vectorially.

Micro optics

• - Mikrooptische Linsen: Mikrooptische Linsen werden verwendet, um Licht zu fokussieren oder zu kollimieren. Sie bestehen oft aus einer Sammellinse oder einer Mikrolinse, die in den Wafer integriert werden kann.
• - Mikrostrukturierte optische Filter: Diese Filter nutzen mikrooptische Strukturen, um bestimmte Wellenlängenbereiche zu blockieren oder durchzulassen. Beispiele hierfür sind Mikro-Gitterfilter oder mikrooptische Interferenzfilter.
• - Mikrooptische Wellenleiter: Mikrooptische Wellenleiter werden verwendet, um Licht innerhalb des Wafers zu führen und zu leiten. Sie können beispielsweise in Form von mikrooptischen Fasern oder Wellenleiterstrukturen realisiert werden.
• - Mikrospiegel: Mikrospiegel bestehen aus kleinen, beweglichen Spiegeln, die das einfallende Licht in verschiedene Richtungen reflektieren können. Sie ermöglichen die optische Steuerung von Lichtstrahlen und werden oft in der optischen Kommunikation oder in der optischen Schaltertechnologie eingesetzt.
• - Mikrostrukturen für die Oberflächenstrukturierung: Mikrooptische Oberflächenstrukturen können verwendet werden, um das einfallende Licht zu streuen, zu brechen oder zu polarisieren. Solche Strukturen können beispielsweise in Form von Mikroprismen, Mikrogittern oder Mikroreliefs realisiert werden.
• - Mikrooptische Beugungsgitter: Mikrooptische Beugungsgitter bestehen aus regelmäßigen mikrooptischen Strukturen, die das einfallende Licht in verschiedene Beugungsordnungen aufspalten. Sie werden häufig in spektralen Analysegeräten oder als optische Kodierstrukturen eingesetzt.
• - Mikrooptische Phasenelemente: Mikrooptische Phasenelemente ermöglichen die Manipulation der Phasen des einfallenden Lichts. Dazu gehören zum Beispiel Mikrooptische Phasengitter, die die Phasenverteilung des Lichts modulieren und zur Erzeugung von Interferenzmustern verwendet werden können.
• - Mikrooptische Detektoren: Mikrooptische Detektoren sind optische Sensoren, die in den Wafer integriert werden können. Sie können zum Beispiel Fotodioden, Fototransistoren oder andere lichtempfindliche Elemente umfassen. Diese Detektoren wandeln Lichtsignale in elektrische Signale um und werden in optischen Kommunikationssystemen oder Sensoren eingesetzt.
• - Mikrooptische Strahlteiler und Koppler: Diese Funktionselemente ermöglichen die Aufteilung oder Kopplung von Licht in mehrere Kanäle. Sie werden oft in optischen Kommunikationssystemen, optischen Schaltern oder optischen Sensoren eingesetzt.
• - Mikrooptische Hohlraumresonatoren: Mikrooptische Hohlraumresonatoren bestehen aus mikrostrukturierten Materialien, die Licht in einem begrenzten Volumen einschließen und bestimmte Resonanzmoden aufweisen. Sie werden in optischen Filtern, Lasern oder als optische Verstärker verwendet.

The carrier substrate (1360) can also include micro-optical functional elements. Here is an example incomplete list:

• - Micro-optical lenses: Micro-optical lenses are used to focus or collimate light. They often consist of a converging lens or a microlens that can be integrated into the wafer.
• - Microstructured optical filters: These filters use micro-optical structures to block or pass certain wavelength ranges. Examples of this are micro-grid filters or micro-optical interference filters.
• - Micro-optical waveguides: Micro-optical waveguides are used to guide and direct light within the wafer. They can be realized, for example, in the form of micro-optical fibers or waveguide structures.
• - Micromirrors: Micromirrors consist of small, movable mirrors that can reflect incident light in different directions. They enable the optical control of light beams and are often used in optical communication or in optical switch technology.
• - Microstructures for surface structuring: Micro-optical surface structures can be used to scatter, refract or polarize the incident light. Such structures can be realized, for example, in the form of microprisms, microgrids or microreliefs.
• - Micro-optical diffraction gratings: Micro-optical diffraction gratings consist of regular micro-optical structures that split the incident light into different diffraction orders. They are often used in spectral analysis devices or as optical coding structures.
• - Micro-optical phase elements: Micro-optical phase elements allow the phases of the incident light to be manipulated. These include, for example, micro-optical phase gratings, which modulate the phase distribution of light and can be used to generate interference patterns.
• - Micro-optical detectors: Micro-optical detectors are optical sensors that can be integrated into the wafer. They can include, for example, photodiodes, phototransistors or other light-sensitive elements. These detectors convert light signals into electrical signals and are used in optical communication systems or sensors.
• - Micro-optical beam splitters and couplers: These functional elements enable the division or coupling of light into multiple channels. They are often used in optical communication systems, optical switches or optical sensors.
• - Micro-optical cavity resonators: Micro-optical cavity resonators are made of microstructured materials that confine light in a limited volume and have specific resonance modes. They are used in optical filters, lasers or as optical amplifiers.

• 1. Lichtemission und -absorption: NV-Zentren und/oder paramagnetischen Zentren können Licht emittieren und absorbieren, wobei ihre optischen Eigenschaften von der Umgebung und den Wechselwirkungen mit analytischen Substanzen und/oder physikalischen Parametern in der Umgebung der NV-zentren und/oder paramagnetischen Zentren beeinflusst werden. Mikrooptische Vorrichtungen wie Mikrospiegel, Mikroresonatoren oder mikrostrukturierte optische Wellenleiter können verwendet werden, um mit dem Licht NV-Zentren und/oder paramagnetischen Zentren zu steuern und zu manipulieren. Durch die Beobachtung von Veränderungen in der Lichtemission oder -absorption der paramagnetischen Zentren und/oder NV-Zentren können Informationen über analysierte Substanzen und/oder physikalische Parameter in der Umgebung der NV-Zentren und/oder paramagnetischen Zentren gewonnen werden.
• 2. Lichtführung und -kopplung: Mikrooptische Vorrichtungen können verwendet werden, um Licht auf die NV-Zentren und/oder paramagnetischen Zentren zu fokussieren, zu lenken oder zu koppeln. Durch die präzise Steuerung des Lichtwegs und der Lichtintensität können gezielte Wechselwirkungen zwischen dem Licht und den NV-Zentren und/oder paramagnetischen Zentren hergestellt werden. Dies ermöglicht die Detektion von optischen Signaländerungen, die auf die Anwesenheit oder Interaktion von analytischen Substanzen und/oder physikalische Parameter in der Umgebung der NV-Zentren und/oder paramagnetischen Zentren zurückzuführen sind.
• 3. Plasmonische Wechselwirkungen: Mikrooptische Vorrichtungen können plasmonische Strukturen enthalten, die die Wechselwirkung zwischen Licht und NV-Zentren und/oder paramagnetischen Zentren verstärken. Plasmonische Effekte können genutzt werden, um die Empfindlichkeit und Auflösung der NV-Zentren-Sensorik und/oder der Sensorik paramagnetischer Zentren zu verbessern. Durch die Integration von NV-Zentren und/oder paramagnetischen Zentren in plasmonische Strukturen können kleinste Veränderungen in der optischen Eigenschaft der NV-Zentren und/oder paramagnetischen Zentren detektiert werden, was zu hoher Empfindlichkeit bei der Detektion von Analyten und/oder physikalischer Parameter in der Umgebung der NV-Zentren und/oder paramagnetischen Zentren führt.
• 4. Spektrale Analyse: Mikrooptische Vorrichtungen können verwendet werden, um das emittierte oder absorbierte Licht von NV-Zentren und/oder paramagnetischen Zentren spektral zu analysieren. Durch die Aufspaltung des Lichts in verschiedene spektrale Komponenten können Informationen über die spektrale Signatur der NV-Zentren und/oder paramagnetischen Zentren und deren Veränderungen aufgrund von Wechselwirkungen mit analytischen Substanzen und/oder physikalischen Parametern in der Umgebung der NV-Zentren und/oder paramagnetischen Zentren erhalten werden.
• 5. Interferenz und Modulation: Mikrooptische Vorrichtungen können Interferenz- und Modulationstechniken nutzen, um Veränderungen in der optischen Phase oder Intensität zu erfassen. Durch die Integration von NV-Zentren und/oder paramagnetischen Zentren in Interferometer- oder Modulationsstrukturen können geringfügige Veränderungen in den optischen Eigenschaften der NV-Zentren und/oder paramagnetischen Zentren detektiert werden, die auf die Anwesenheit oder Interaktion von analytischen Substanzen und/oder Änderungen physikalischer Parameter in der Umgebung der NV-Zentren und/oder paramagnetischen Zentren hinweisen.
• 6. Kohärenzeffekte: NV-Zentren und/oder paramagnetische Zentren können kohärente optische Signale erzeugen, die zur Messung von Phasen- und Frequenzänderungen verwendet werden können. Mikrooptische Vorrichtungen können dazu dienen, die Kohärenz der NV-Zentren und/oder der paramagnetischen Zentren zu erhalten und zu verbessern. Durch die präzise Kontrolle der Kohärenzeigenschaften können subtile optische Signale detektiert werden, die auf die Anwesenheit oder Wechselwirkung mit analytischen Substanzen und/oder Änderungen physikalischer Parameter in der Umgebung der NV-Zentren und/oder paramagnetischen Zentren hinweisen.
• 7. Polarisationsempfindlichkeit: NV-Zentren und/oder der paramagnetische Zentren zeigen eine starke Empfindlichkeit gegenüber der Polarisation des Lichts. Mikrooptische Vorrichtungen können dazu verwendet werden, die Polarisation des Lichts, das auf die NV-Zentren und/oder der paramagnetischen Zentren trifft, zu manipulieren und zu analysieren. Durch die Messung von Polarisationseffekten können Informationen über die Umgebung der NV-Zentren und/oder der paramagnetischen Zentren und die Wechselwirkungen mit analytischen Substanzen und/oder mit physikalischen Parametern in der Umgebung der NV-Zentren und/oder paramagnetischen Zentren gewonnen werden.
• 8. Nahfeldoptik: Mikrooptische Vorrichtungen können in Kombination mit NV-Zentren und/oder paramagnetischen Zentren zur Nahfeldoptik genutzt werden. Dies ermöglicht die Manipulation und Erfassung von Licht im Bereich des optischen Nahfelds, was eine hohe räumliche Auflösung und beispielsweise eine verbesserte Wechselwirkung mit analytischen Substanzen und/oder physikalischen Parametern in der Nähe der NV-Zentren und/oder paramagnetischen Zentren bietet. Durch die gezielte Kontrolle des Lichtfelds in der Nähe der NV-Zentren und/oder der paramagnetischen Zentren können Informationen über die Substanzen in unmittelbarer Nähe und/oder physikalischer Parameter in der Umgebung der NV-Zentren und/oder paramagnetischen Zentren erhalten werden.
• 9. Integration von Mikrolinsen oder Mikroobjektiven: Mikrooptische Vorrichtungen können Mikrolinsen oder Mikroobjektive enthalten, die dazu dienen, das Licht auf die NV-Zentren und/oder die paramagnetischen Zentren zu fokussieren oder das emittierte Licht zu sammeln. Durch die präzise Kontrolle der Linsenposition und -geometrie können optimale Lichtverhältnisse für die Wechselwirkung mit analytischen Substanzen und/oder physikalischen Parametern in der Umgebung der NV-Zentren und/oder paramagnetischen Zentren geschaffen werden.
• 10. Wellenleiter-Integration: Mikrooptische Vorrichtungen können optische Wellenleiterstrukturen enthalten, die das Licht zu den NV-Zentren und/oder den paramagnetischen Zentren leiten oder das emittierte Licht sammeln. Durch die Integration von NV-Zentren und/oder von paramagnetischen Zentren in diese Wellenleiterstrukturen können die Wechselwirkungen zwischen dem Licht und den analytischen Substanzen und/oder physikalischen Parametern in der Umgebung der NV-Zentren und/oder paramagnetischen Zentren verstärkt und gezielt gesteuert werden.

In NV center sensing and/or paramagnetic center sensing, micro-optical devices can be used in combination with NV centers and/or paramagnetic centers to provide information about analytical substances and/or physical parameters in the vicinity of the NV centers and/or or paramagnetic centers. The document presented here lists some interactions between micro-optical devices and NV centers and/or paramagnetic centers in NV center sensing and/or paramagnetic center sensing:

• 1. Light emission and absorption: NV centers and/or paramagnetic centers can emit and absorb light, their optical properties depending on the environment and the interactions with analytical substances and/or physical parameters in the vicinity of the NV centers and/or paramagnetic centers are influenced. Micro-optical devices such as micromirrors, microresonators or microstructured optical waveguides can be used to control and manipulate NV centers and/or paramagnetic centers with the light. By observing changes in the light emission or absorption of the paramagnetic centers and/or NV centers, information about analyzed substances and/or physical parameters in the vicinity of the NV centers and/or paramagnetic centers can be obtained.
• 2. Light guidance and coupling: Micro-optical devices can be used to focus, direct or couple light to the NV centers and/or paramagnetic centers. By precisely controlling the light path and light intensity, targeted interactions can be established between the light and the NV centers and/or paramagnetic centers. This enables the detection of optical signal changes that are due to the presence or interaction of analytical substances and/or physical parameters in the vicinity of the NV centers and/or paramagnetic centers.
• 3. Plasmonic interactions: Micro-optical devices can contain plasmonic structures that enhance the interaction between light and NV centers and/or paramagnetic centers. Plasmonic effects can be used to improve the sensitivity and resolution of NV center sensing and/or paramagnetic center sensing. By integrating NV centers and/or paramagnetic centers into plasmonic structures, the smallest changes in the optical properties of the NV centers and/or paramagnetic centers can be detected, resulting in high sensitivity in the detection of analytes and/or physical parameters in the Environment of the NV centers and/or paramagnetic centers.
• 4. Spectral analysis: Micro-optical devices can be used to spectrally analyze the emitted or absorbed light from NV centers and/or paramagnetic centers. By splitting the light into different spectral components, information can be obtained about the spectral signature of the NV centers and/or paramagnetic centers and their changes due to interactions with analytical substances and/or physical parameters in the vicinity of the NV centers and/or paramagnetic centers be received.
• 5. Interference and Modulation: Micro-optical devices can utilize interference and modulation techniques to detect changes in optical phase or intensity. By integrating NV centers and/or paramagnetic centers into interferometer or modulation structures, minor changes in the optical properties of the NV centers and/or paramagnetic centers can be detected, which are due to the presence or interaction of analytical substances and/or changes in physical properties Parameters in the vicinity of the NV centers and/or paramagnetic centers indicate.
• 6. Coherence effects: NV centers and/or paramagnetic centers can produce coherent optical signals that can be used to measure phase and frequency changes. Micro-optical devices can serve to maintain and improve the coherence of the NV centers and/or the paramagnetic centers. By precisely controlling the coherence properties, subtle optical signals can be detected that indicate the presence or interaction with analytical substances and/or changes in physical parameters in the vicinity of the NV centers and/or paramagnetic centers.
• 7. Polarization sensitivity: NV centers and/or the paramagnetic centers show a strong sensitivity to the polarization of light. Micro-optical devices can be used to control the polarization of the light incident on the NV centers and/or the paramagnetic Centers to manipulate and analyze. By measuring polarization effects, information can be obtained about the surroundings of the NV centers and/or the paramagnetic centers and the interactions with analytical substances and/or with physical parameters in the surroundings of the NV centers and/or paramagnetic centers.
• 8. Near-field optics: Micro-optical devices can be used in combination with NV centers and/or paramagnetic centers for near-field optics. This enables the manipulation and detection of light in the optical near field region, which offers high spatial resolution and, for example, improved interaction with analytical substances and/or physical parameters in the vicinity of the NV centers and/or paramagnetic centers. By specifically controlling the light field in the vicinity of the NV centers and/or the paramagnetic centers, information about the substances in the immediate vicinity and/or physical parameters in the vicinity of the NV centers and/or paramagnetic centers can be obtained.
• 9. Integration of microlenses or microobjectives: Microoptical devices may contain microlenses or microobjectives that serve to focus the light on the NV centers and/or the paramagnetic centers or to collect the emitted light. By precisely controlling the lens position and geometry, optimal lighting conditions can be created for interaction with analytical substances and/or physical parameters in the vicinity of the NV centers and/or paramagnetic centers.
• 10. Waveguide integration: Micro-optical devices can contain optical waveguide structures that guide the light to the NV centers and/or the paramagnetic centers or collect the emitted light. By integrating NV centers and/or paramagnetic centers into these waveguide structures, the interactions between the light and the analytical substances and/or physical parameters in the vicinity of the NV centers and/or paramagnetic centers can be strengthened and controlled in a targeted manner.

These interactions between micro-optical devices and NV centers and/or the paramagnetic centers open up a wide range of applications in optical sensing, chemical analysis, biotechnology and other areas. By integrating NV centers and/or the paramagnetic centers into micro-optical systems, highly sensitive, high-resolution and precise measurements of analytical substances and/or physical parameters in the vicinity of the NV centers and/or paramagnetic centers can be made possible.

Microfluidics

• - Mikrokanäle: Mikrokanäle sind winzige Kanäle, die Flüssigkeiten oder Gase auf mikroskopischer Skala transportieren können. Sie können in den Wafer integriert werden, um Fluidströme zu lenken, zu mischen oder zu trennen. Mikrokanäle können beispielsweise für die Durchführung von Lab-on-a-Chip-Anwendungen, zur Analyse von biologischen Proben oder für die chemische Reaktionstechnik verwendet werden.
• - Mikroventile: Mikroventile dienen zur Steuerung des Flusses in Mikrokanälen. Sie ermöglichen das Öffnen, Schließen oder Regulieren des Flüssigkeitsstroms. Mikroventile können beispielsweise in mikrofluidischen Systemen eingesetzt werden, um den Fluss zu stoppen oder umzuleiten und damit eine Wechselwirkung zwischen den NV-zentren und/oder paramagnetischen Zentren zu beeinflussen.

• - Mikropumpen: Mikropumpen erzeugen Druckunterschiede, um Flüssigkeiten in Mikrokanälen zu bewegen. Sie können beispielsweise mit Hilfe von piezoelektrischen oder elektro-osmotischen Effekten arbeiten. Mikropumpen ermöglichen die aktive Steuerung des Flusses und finden Anwendung in verschiedenen Bereichen wie medizinischer Diagnostik, chemischer Analytik oder Mikroreaktionssystemen.
• - Mikrostrukturierte Mischkammern: Mikrostrukturierte Mischkammern werden verwendet, um Flüssigkeiten oder Gase effizient zu mischen. Sie enthalten spezielle Strukturen wie Wirbelgeneratoren oder mikrostrukturierte Hindernisse, um eine schnelle und homogene Mischung zu erreichen. Mikrostrukturierte Mischkammern finden Anwendung in chemischen Reaktionssystemen, biologischen Analysen oder in der Lab-on-a-Chip-Technologie.
• - Mikrofilter und Separationsstrukturen: Mikrofilter und Separationsstrukturen dienen zur Trennung von Partikeln oder Verunreinigungen in Flüssigkeiten. Sie können beispielsweise aus mikrostrukturierten Membranen, Mikro-Gewebe- oder Mikro-Sieben bestehen. Solche Strukturen werden in der Mikrofluidik verwendet, um Proben zu filtern, Zellen zu sortieren oder Partikel abzutrennen.

In microfluidics there are various functional elements that can be integrated into the carrier substrate (1360). Here are some examples:

• - Microchannels: Microchannels are tiny channels that can transport liquids or gases on a microscopic scale. They can be integrated into the wafer to direct, mix or separate fluid flows. Microchannels can be used, for example, to carry out lab-on-a-chip applications, to analyze biological samples or for chemical reaction engineering.
• - Microvalves: Microvalves are used to control flow in microchannels. They allow you to open, close or regulate the flow of liquid. Microvalves can be used, for example, in microfluidic systems to stop or redirect the flow and thus influence an interaction between the NV centers and/or paramagnetic centers.

• - Micropumps: Micropumps create pressure differences to move liquids in microchannels. For example, you can work with the help of piezoelectric or electro-osmotic effects. Micropumps enable active flow control and are used in various areas such as medical diagnostics, chemical analysis or microreaction systems.
• - Microstructured mixing chambers: Microstructured mixing chambers are used to efficiently mix liquids or gases. They contain special structures such as vortex generators or microstructured obstacles to achieve rapid and homogeneous mixing. Microstructured mixing chambers are used in chemical reaction systems, biological analyzes or in lab-on-a-chip technology.
• - Microfilters and separation structures: Microfilters and separation structures are used to separate particles or impurities in liquids. For example, they can be made of microstructured Membranes, micro-fabric or micro-sieves exist. Such structures are used in microfluidics to filter samples, sort cells or separate particles.

These functional elements can be integrated into the carrier substrate (1360) if necessary by producing them using microfabrication processes such as photolithography, etching technology, additive manufacturing, injection molding or coating technology, etc. The integration of microfluidic elements into the carrier substrate (1360) enables the miniaturization and integration of liquid manipulation systems on a chip.

1. 1. Fluoreszenzdetektion: Paramagnetische Zentren und/oder NV-Zentren können Fluoreszenzstrahlung (FL) emittieren, das als fluoreszentes Signal detektiert werden kann. Mikrofluidische Vorrichtungen können verwendet werden, um Proben mit analytischen Substanzen in der Nähe der NV-Zentren und/oder paramagnetischen Zentren zu platzieren. Wenn die analytischen Substanzen mit den NV-Zentren und/oder den paramagnetischen Zentren wechselwirken, können Änderungen im jeweiligen Fluoreszenzsignal beobachtet werden. Dies ermöglicht die Detektion und Quantifizierung von Analyten und/oder die Detektion von Änderungen physikalischer Parameter in der Umgebung der NV-Zentren und/oder paramagnetischen Zentren.
2. 2. Magnetfeldmessungen: NV-Zentren und/oder paramagnetische Zentren zeigen eine empfindliche Abhängigkeit ihrer optischen Eigenschaften von Magnetfeldern. Mikrofluidische Vorrichtungen können verwendet werden, um Proben mit magnetischen Substanzen in der Nähe der NV-Zentren und/oder paramagnetischen Zentren zu platzieren. Die Wechselwirkung zwischen den magnetischen Substanzen und den NV-Zentren und/oder paramagnetischen Zentren führt zu Änderungen im jeweiligen optischen Fluoreszenzsignal der Intensität (I_ist(t)) der Fluoreszenzstrahlung (FL), die zur Messung von Magnetfeldern genutzt werden können.
3. 3. Oberflächenplasmonenresonanz (SPR): Mikrofluidische Vorrichtungen können speziell gestaltete Oberflächenstrukturen enthalten, die die Wechselwirkung zwischen NV-Zentren und/oder paramagnetischen Zentren einerseits und analytischen Substanzen andererseits verstärken. Durch die Kombination von NV-Zentren und/oder paramagnetischen Zentren mit Oberflächenplasmonenresonanz (SPR) können winzige Änderungen in der optischen Eigenschaft der NV-Zentren und/oder paramagnetischen Zentren detektiert werden, was zu hoher Empfindlichkeit bei der Detektion von Analyten und/oder der Detektion von Änderungen physikalischer Parameter in der Umgebung der NV-Zentren und/oder paramagnetischen Zentren führt.
4. 4. Chemische Reaktionen: Mikrofluidische Vorrichtungen können verwendet werden, um chemische Reaktionen zwischen analytischen Substanzen einerseits und NV-Zentren und/oder paramagnetischen Zentren zu ermöglichen. Durch die präzise Steuerung von Reaktionsbedingungen wie Temperatur, Druck und Flussrate können spezifische chemische Reaktionen initiiert und verfolgt werden. Die resultierenden Veränderungen in den optischen oder magnetischen Eigenschaften der NV-Zentren und/oder paramagnetischen Zentren können Informationen über die analysierten Substanzen und/oder Informationen über physikalische Parametern in der Umgebung der NV-Zentren und/oder paramagnetischen Zentren liefern.

In NV center sensing and/or sensing with paramagnetic centers, microfluidic devices can be used in combination with NV centers or paramagnetic centers to provide information about analytical substances and/or physical parameters in the vicinity of the NV centers and/or or paramagnetic centers. Here are some known interactions between microfluidic devices and NV centers in NV center sensing and/or paramagnetic center sensing. The document presented here hereby describes the combination of the methods and devices presented here based on a large number of crystals and/or diamond nanocrystals (ND) with the interactions listed below as examples:

1. 1. Fluorescence detection: Paramagnetic centers and/or NV centers can emit fluorescence radiation (FL), which can be detected as a fluorescent signal. Microfluidic devices can be used to place samples containing analytical substances near the NV centers and/or paramagnetic centers. If the analytical substances interact with the NV centers and/or the paramagnetic centers, changes in the respective fluorescence signal can be observed. This enables the detection and quantification of analytes and/or the detection of changes in physical parameters in the vicinity of the NV centers and/or paramagnetic centers.
2. 2. Magnetic field measurements: NV centers and/or paramagnetic centers show a sensitive dependence of their optical properties on magnetic fields. Microfluidic devices can be used to place samples containing magnetic substances near the NV centers and/or paramagnetic centers. The interaction between the magnetic substances and the NV centers and/or paramagnetic centers leads to changes in the respective optical fluorescence signal of the intensity (I _is (t)) of the fluorescence radiation (FL), which can be used to measure magnetic fields.
3. 3. Surface plasmon resonance (SPR): Microfluidic devices can contain specially designed surface structures that enhance the interaction between NV centers and/or paramagnetic centers on the one hand and analytical substances on the other. By combining NV centers and/or paramagnetic centers with surface plasmon resonance (SPR), minute changes in the optical property of the NV centers and/or paramagnetic centers can be detected, resulting in high sensitivity in the detection of analytes and/or detection of changes in physical parameters in the vicinity of the NV centers and/or paramagnetic centers.
4. 4. Chemical reactions: Microfluidic devices can be used to enable chemical reactions between analytical substances and NV centers and/or paramagnetic centers. By precisely controlling reaction conditions such as temperature, pressure and flow rate, specific chemical reactions can be initiated and monitored. The resulting changes in the optical or magnetic properties of the NV centers and/or paramagnetic centers can provide information about the substances analyzed and/or information about physical parameters in the vicinity of the NV centers and/or paramagnetic centers.

These interactions enable the application of NV centers and/or paramagnetic centers in sensor diagnostics, chemical analysis, medical diagnostics and other areas. The integration of microfluidic devices allows precise control of the sample environment and efficient analysis of analytes by exploiting the unique optical and magnetic properties of NV centers and/or paramagnetic centers.

Micromechanics

• - Mikroaktoren: Mikroaktoren sind mechanische Bauteile, die translatorische und/oder rotatorische Bewegungen oder Verformungen auf mikroskopischer Skala erzeugen können. Sie können beispielsweise in Form von mikroelektromechanischen Systemen (MEMS) realisiert werden und verschiedene Aktionsprinzipien umfassen, wie zum Beispiel elektrostatische, piezoelektrische oder elektromagnetische Aktoren. Mikroaktoren finden Anwendung in Bereichen wie der Optik, der Robotik, der Sensorik oder der Medizintechnik.
• - Mikrosensoren: Mikrosensoren dienen zur Erfassung physikalischer Größen wie Druck, Temperatur, Beschleunigung oder chemischer Parameter auf mikroskopischer Skala. Sie können beispielsweise in Form von MEMS-Sensoren realisiert werden und verschiedene Wirkprinzipien umfassen, wie zum Beispiel Kapazitanz, piezoresistive oder optische Sensoren. Mikrosensoren werden in vielen Anwendungen eingesetzt, darunter Automobilelektronik, medizinische Diagnostik, Umweltüberwachung und Industrieautomatisierung.
• - Mikrostrukturen: Mikrostrukturen umfassen eine Vielzahl von mikromechanischen Strukturen wie Balken, Federn, Hebel oder Zahnradsysteme. Diese Strukturen können verwendet werden, um mechanische Funktionen zu realisieren, wie zum Beispiel die Kraftübertragung, die Bewegungsumsetzung oder die Energieübertragung. Mikrostrukturen werden in vielen Anwendungen eingesetzt, darunter mechanische Schalter, Mikrogetriebe, Mikroaktuatoren oder Mikropumpen.
• - Mikroresonatoren: Mikroresonatoren sind mechanische Strukturen, die Schwingungen mit bestimmten Resonanzfrequenzen erzeugen können. Sie können beispielsweise in Form von Mikrobrücken, Mikroklammern oder Mikro-Biegebalken realisiert werden. Mikroresonatoren finden Anwendung in der Präzisionstechnik, der Frequenznormierung, der Sensorik oder der Schwingungsanalyse.
• - Mikrostrukturierungstechniken: Neben den einzelnen Funktionselementen sind auch mikrofabrikationstechnische Verfahren und Techniken Teil der Mikromechanik. Dazu gehören beispielsweise die fotolithographische Strukturierung, die Ätztechnik, die Dünnschichttechnologie oder die Mikrofertigungstechniken. Diese Techniken ermöglichen die präzise Herstellung von mikromechanischen Strukturen und die Integration von Funktionselementen in einen Wafer.

In micromechanics there are various functional elements that can be integrated into the carrier substrate (1360). Here are some examples:

• - Microactuators: Microactuators are mechanical components that can generate translational and/or rotational movements or deformations on a microscopic scale. They can, for example, be implemented in the form of microelectromechanical systems (MEMS) and include various action principles, such as electrostatic, piezoelectric or electromagnetic actuators. Microactuators are used in areas such as optics, robotics, sensors and medical technology.
• - Microsensors: Microsensors are used to record physical quantities such as pressure, temperature, acceleration or chemical parameters on a microscopic scale. They can be implemented, for example, in the form of MEMS sensors and include various operating principles, such as capacitance, piezoresistive or optical sensors. Microsensors are used in many applications including automotive electronics, medical diagnostics, environmental monitoring and industrial automation.
• - Microstructures: Microstructures include a variety of micromechanical structures such as beams, springs, levers or gear systems. These structures can be used to realize mechanical functions such as power transmission, motion conversion or energy transfer. Microstructures are used in many applications, including mechanical switches, microgears, microactuators or micropumps.
• - Microresonators: Microresonators are mechanical structures that can generate vibrations with specific resonance frequencies. They can be realized, for example, in the form of micro-bridges, micro-clamps or micro-bending beams. Microresonators are used in precision engineering, frequency normalization, sensor technology or vibration analysis.
• - Microstructuring techniques: In addition to the individual functional elements, microfabrication processes and techniques are also part of micromechanics. These include, for example, photolithographic structuring, etching technology, thin-film technology or micromanufacturing techniques. These techniques enable the precise production of micromechanical structures and the integration of functional elements into a wafer.

The integration of these functional elements and techniques in the carrier substrate (1360) enables the production of micromechanics-based components and systems on a chip.

1. 1. Oberflächenfunktionalisierung: Mikromechanische Vorrichtungen können mit Oberflächenstrukturen oder Beschichtungen, insbesondere ferromagnetische oder permanentmagnetische Beschichtungen, versehen werden, um NV-Zentren und/oder paramagnetischen Zentren zu immobilisieren oder zu positionieren und/oder magnetische Funktionselemente in die Nähe der NV-Zentren und/oder paramagnetischen Zentren zu bringen. Durch die gezielte Platzierung der NV-Zentren und/oder paramagnetischen Zentren in der Nähe der zu analysierenden Substanzen können spezifische Wechselwirkungen ermöglicht werden, die zu detektierbaren Veränderungen in den optischen oder magnetischen Eigenschaften der NV-Zentren und/oder paramagnetischen Zentren führen.
2. 2. Schwingungsanalyse: Mikromechanische Vorrichtungen können verwendet werden, um die mechanischen Einflüsse auf NV-Zentren und/oder paramagnetische Zentren mittels ferro- und permanentmagnetischen Funktionselementen zu analysieren. Durch die Integration von NV-Zentren und/oder paramagnetischen Zentren in mikromechanische Resonatoren oder Biegebalken und/oder ferro- oder permanentmagnetische Vorrichtungsteile können mechanische Kräfte oder Verformungen erfasst werden, die beispielsweise durch Wechselwirkungen mit analytischen Substanzen und/oder physikalische Parameter wie Druck, Beschleunigung, Rotation, Kraft, Spannung hervorgerufen werden. Diese Veränderungen können beispielsweise als Indikatoren für die Anwesenheit oder Konzentration der analytischen Substanzen und/oder physikalische Parameter dienen.
3. 3. Kraftdetektion: NV-Zentren und/oder paramagnetischen Zentren und/oder die Systeme aus diesen und ferromagnetische oder permanentmagnetische Vorrichtungsteilen können empfindlich auf mechanische Kräfte reagieren, die auf sie ausgeübt werden. Mikromechanische Vorrichtungen können verwendet werden, um die Wechselwirkungskräfte zwischen NV-Zentren und/oder paramagnetischen Zentren einerseits und analytischen Substanzen zu erfassen. Durch die Messung der Änderungen in den optischen oder magnetischen Eigenschaften der NV-Zentren und/oder paramagnetischen Zentren können Informationen über die analysierten Substanzen und/oder Informationen über physikalische Parameter in der Umgebung der NV-Zentren und/oder paramagnetischen Zentren und/oder über die ferro- oder permanentmagnetischen Vorrichtungsteile gewonnen werden.
4. 4. Druck- und Spannungsmessung: NV-Zentren und/oder paramagnetischen Zentren können als druck- und spannungsempfindliche Sensoren dienen. Mikromechanische Vorrichtungen können verwendet werden, um Druck- oder Spannungsänderungen in der Umgebung der NV-Zentren und/oder paramagnetischen Zentren zu erzeugen, ggf. in Änderungen von Magnetfeldern zu wandeln und zu messen. Dies ermöglicht die Analyse von mechanischen Eigenschaften von Materialien oder die Detektion von Druck- oder Spannungsänderungen in analytischen Proben oder Materialien.
5. 5. Akustische Detektion: Mikromechanische Vorrichtungen können als akustische Transduktoren fungieren, um Schallwellen zu erzeugen oder zu erfassen. Durch die Integration von NV-Zentren und/oder paramagnetischen Zentren in solche Vorrichtungen können akustische Wechselwirkungen zwischen den NV-Zentren und/oder paramagnetischen Zentren einerseits und den zu analysierenden Substanzen bzw. physikalischer Parameter andererseits beispielsweise mittels magnetischer Vorrichtungsteile erfasst werden. Dies ermöglicht die akustische Detektion und Charakterisierung von Analyten und/oder von physikalischen Parametern in der Umgebung der NV-Zentren und/oder paramagnetischen Zentren.

The combination of micromechanical devices, in particular if they include ferromagnetic or permanent magnetic device parts, with NV centers and/or paramagnetic centers in NV center sensing and/or the sensing of paramagnetic centers enables the use of the unique properties of NV centers and/or paramagnetic centers for the detection and characterization of analytical substances and/or physical parameters in the vicinity of the NV centers and/or paramagnetic centers. Here are some known interactions between micromechanical devices and NV centers and/or paramagnetic centers in NV center sensing and/or paramagnetic center sensing:

1. 1. Surface functionalization: Micromechanical devices can be provided with surface structures or coatings, in particular ferromagnetic or permanent magnetic coatings, in order to immobilize or position NV centers and/or paramagnetic centers and/or magnetic functional elements in the vicinity of the NV centers and/or to bring paramagnetic centers. By specifically placing the NV centers and/or paramagnetic centers in the vicinity of the substances to be analyzed, specific interactions can be made possible, which lead to detectable changes in the optical or magnetic properties of the NV centers and/or paramagnetic centers.
2. 2. Vibration analysis: Micromechanical devices can be used to analyze the mechanical influences on NV centers and/or paramagnetic centers using ferromagnetic and permanent magnetic functional elements. By integrating NV centers and/or paramagnetic centers into micromechanical resonators or bending beams and/or ferromagnetic or permanent magnetic device parts, mechanical forces or deformations can be recorded, which are caused, for example, by interactions with analytical substances and/or physical parameters such as pressure, acceleration, Rotation, force, tension are caused. This change Changes can, for example, serve as indicators of the presence or concentration of the analytical substances and/or physical parameters.
3. 3. Force detection: NV centers and/or paramagnetic centers and/or the systems of these and ferromagnetic or permanent magnetic device parts can react sensitively to mechanical forces exerted on them. Micromechanical devices can be used to detect the interaction forces between NV centers and/or paramagnetic centers on the one hand and analytical substances. By measuring the changes in the optical or magnetic properties of the NV centers and/or paramagnetic centers, information about the analyzed substances and/or information about physical parameters in the vicinity of the NV centers and/or paramagnetic centers and/or about the ferro- or permanent-magnetic device parts can be obtained.
4. 4. Pressure and voltage measurement: NV centers and/or paramagnetic centers can serve as pressure and voltage sensitive sensors. Micromechanical devices can be used to generate pressure or voltage changes in the surroundings of the NV centers and/or paramagnetic centers, if necessary to convert them into changes in magnetic fields and to measure them. This enables the analysis of mechanical properties of materials or the detection of pressure or stress changes in analytical samples or materials.
5. 5. Acoustic detection: Micromechanical devices can act as acoustic transducers to generate or detect sound waves. By integrating NV centers and/or paramagnetic centers into such devices, acoustic interactions between the NV centers and/or paramagnetic centers on the one hand and the substances or physical parameters to be analyzed on the other hand can be detected, for example by means of magnetic device parts. This enables the acoustic detection and characterization of analytes and/or physical parameters in the vicinity of the NV centers and/or paramagnetic centers.

These direct interactions between micromechanical devices and NV centers and/or paramagnetic centers open up new possibilities for the application of NV centers and/or paramagnetic centers and indirect interactions via magnetic ferromagnetic or permanent magnetic device parts in sensor technology, especially in areas such as material characterization, environmental monitoring, medical diagnostics and nanotechnology. However, the exact design and integration of these devices depend on the specific applications.

Essential insight into producibility

When developing the technical teaching of the document presented here, it was recognized that the use of many crystals or diamond nanocrystals (ND) leads to a smearing of the V formations of the fluorescence structures of the single crystals (see 1 ), but this does not apply to the outer resonance edges (522, 525, see 51b) applies. A basic idea is therefore to use NV diamond powder or crystal powder with paramagnetic centers for the sensor elements (SE) instead of single crystals and to measure the resonance edges in order to determine the magnetic flux density and/or the microwave frequency. The outer V formation remains. (please refer 2 )

Depending on the unknown microwave frequency (ω _nk ) and magnetic flux density (B _ext ), the position of this V-formation shifts in the diagram 2 . The unknown magnetic flux density (B _ext ) is summarily superimposed with a known additional magnetic flux density (B _ad ) generated by the proposed device to form the total magnetic flux density B _Σ , which determines the vertical position of the V-formation in 2 certainly. The microwave signal (S _ωnk ) with an unknown microwave frequency (ω _nk ) is mixed with a microwave signal with a known microwave frequency. One of the sidebands and the carrier signal should be filtered away. The sideband that is not filtered out then shifts the V formation in the 2 in the horizontal.

The displacement of the V formation can then be used to determine the magnetic flux density B _ext and the unknown microwave frequency ω _nk . If two microwave signals with two unknown microwave frequencies are mixed together, the V formation doubles at two different horizontal positions. This means that the microwave spectrum of the admixture can be determined via a cross-correlation between the V formation without admixture and with the formations with admixtures via the microwave frequencies.

In order to determine the unknown microwave frequency, it is particularly advantageous to determine the most prominent point of the V formation, since its shape is independent of external influences and is previously known and can be predetermined. This is the tip (530) of the V-formation (522, 525). Instead of the tip (530) of the V-formation (522, 525), functionally equivalent information can of course also be used, such as two points on the left branch of the V-formation and two points on the right branch of the V formation can be used. The slopes of the grades through the two points on the left branch of the V formation are previously known. The slopes of the grades through the two points on the right branch of the V formation are previously known. Thus, after knowing four such points, the position of the tip of the V formation can be determined from the positions of these four points in the magnetic flux density and microwave frequency diagram.

1. 1. Rasterverfahren: Bei diesem Verfahren wird der Messbereich in ein regelmäßiges Raster unterteilt. Die Steuervorrichtung kann systematisch die Messpunkte des Rasters abarbeiten, beginnend von einem Startpunkt. Der nächste Messpunkt wird in vordefinierter Reihenfolge ausgewählt, zum Beispiel durch schrittweise Erhöhung oder Verringerung des ersten und/oder zweiten Messparameters. Dieses Verfahren ermöglicht eine gleichmäßige Abdeckung des Messbereichs, kann jedoch ineffizient sein, wenn die V-Formation nicht regelmäßig ist.
2. 2. Schrittweitenanpassung: Hierbei wird die Schrittweite zur Anpassung der Messparameter basierend auf den bisherigen Messungen verwendet. Die Steuervorrichtung startet mit einem bestimmten Schritt und passt diesen anhand der erfassten Messwerte an. Wenn der Betrag des Gradienten des Messwerts des Sensorelements zunimmt, kann die Schrittweite verringert werden, um eine genauere Bestimmung der Lage der V-Formation zu ermöglichen. Dieses Verfahren erfordert jedoch eine iterative Anpassung und kann je nach Komplexität der V-Formation Zeit in Anspruch nehmen.
3. 3. Gradientenverfahren: Das Gradientenverfahren nutzt den Gradienten des Messwerts des Sensorelements, um die Richtung der maximalen Steigung zu bestimmen. Die Steuervorrichtung kann die Messparameter entlang dieser Richtung anpassen, um den nächsten Messpunkt zu bestimmen. Durch die Berücksichtigung des Gradienten kann das Verfahren schnell zur Spitze der V-Formation führen. Jedoch kann es in Regionen mit flachem Gradienten oder wenn die V-Formation asymmetrisch ist, weniger effektiv sein.
4. 4. Optimierungsalgorithmen: Es können verschiedene Optimierungsalgorithmen wie der Nelder-Mead-Algorithmus oder der Powell-Algorithmus eingesetzt werden, um die Position der V-Formation zu bestimmen. Diese Algorithmen verwenden eine Kombination aus direkter Suche und Gradienteninformation, um den nächsten Messpunkt zu finden. Sie können effizient sein, erfordern jedoch möglicherweise komplexe mathematische Berechnungen und mehr Rechenleistung.
5. 5. Machine-Learning-Methoden: Fortgeschrittene Machine-Learning-Techniken wie neuronale Netzwerke oder genetische Algorithmen können verwendet werden, um die Lage der V-Formation zu bestimmen. Diese Ansätze können aus den bisherigen Messdaten lernen und eine Vorhersage für den nächsten Messpunkt treffen. Dies erfordert jedoch eine umfangreiche Datensammlung und Modelltrainingsphase, bevor das System einsatzbereit ist.

When developing the proposal for determining the position of the lower tip of the V-shape in the XY plane, i.e. the location of the V-formation, various methods can be used. The following text lists five exemplary methods for determining the next measuring point from the next first measurement parameter and the next second measurement parameter:

1. 1. Grid method: In this method, the measuring area is divided into a regular grid. The control device can systematically process the measuring points of the grid, starting from a starting point. The next measuring point is selected in a predefined order, for example by gradually increasing or decreasing the first and/or second measuring parameters. This method allows for uniform coverage of the measurement area, but can be inefficient if the V formation is not regular.
2. 2. Step size adjustment: Here, the step size is used to adjust the measurement parameters based on the previous measurements. The control device starts with a specific step and adapts it based on the measured values recorded. As the magnitude of the gradient of the sensor element reading increases, the step size may be reduced to allow a more accurate determination of the location of the V formation. However, this procedure requires iterative adjustment and may take time depending on the complexity of the V formation.
3. 3. Gradient method: The gradient method uses the gradient of the sensor element's measured value to determine the direction of the maximum slope. The control device can adjust the measurement parameters along this direction to determine the next measurement point. By taking the gradient into account, the method can quickly lead to the top of the V formation. However, it may be less effective in regions with shallow gradients or when the V formation is asymmetrical.
4. 4. Optimization Algorithms: Various optimization algorithms such as Nelder-Mead algorithm or Powell algorithm can be used to determine the position of the V formation. These algorithms use a combination of direct search and gradient information to find the next measurement point. They can be efficient, but may require complex mathematical calculations and more computing power.
5. 5. Machine learning methods: Advanced machine learning techniques such as neural networks or genetic algorithms can be used to determine the location of the V formation. These approaches can learn from previous measurement data and make a prediction for the next measurement point. However, this requires extensive data collection and model training phase before the system is ready for use.

It is important to note that the selection of the most appropriate method depends on various factors, the accuracy requirements, the available resources and the context of the application.

• • Komplexität der V-Formation: Je komplexer die Form der V-Formation ist, - also je mehr Merkmale der 2 und der nachfolgenden Figuren berücksichtigt werden, desto anspruchsvoller kann die Bestimmung der Lage sein. Da die inneren Strukturen der V-Formation der 2 asymmetrisch und nichtlinear sind, können Verfahren wie das Gradientenverfahren oder Machine-Learning-Methoden besonders vorteilhaft sein, um genaue Ergebnisse zu erzielen.
• • Genauigkeitsanforderungen: Die erforderliche Präzision beeinflusst die Wahl des Verfahrens. Wenn hohe Genauigkeit erforderlich ist, können Optimierungsalgorithmen oder präzisionsbasierte Schrittweitenanpassungsmethoden eingesetzt werden. Bei weniger strengen Anforderungen kann ein Rasterverfahren oder ein gröberes Schrittweitenanpassungsverfahren ausreichen.
• • Verfügbare Ressourcen: Die zur Verfügung stehenden technischen Ressourcen, wie Rechenleistung, Stromverbrauch, funktionale Sicherheit, Speicherplatz oder Messinstrumente, können die Auswahl beeinflussen. Komplexere Verfahren wie Machine-Learning-Methoden erfordern möglicherweise mehr Ressourcen für das Training von Modellen oder die Verarbeitung großer Datenmengen.
• • Kontext der Anwendung: Der spezifische Anwendungsbereich und die zugrunde liegenden Rahmenbedingungen spielen ebenfalls eine Rolle. In einigen Anwendungen kann eine schnelle, aber grobe Näherung ausreichend sein, während andere Anwendungen eine detaillierte und präzise Bestimmung erfordern.

An in-depth analysis and evaluation of these factors allows selection of the most appropriate method for determining the position of the top of the V formation in the XY plane. The following aspects should be taken into account:

• • Complexity of the V-formation: The more complex the shape of the V-formation - i.e. the more features it has 2 and the following figures are taken into account, the more challenging the determination of the situation can be. Since the internal structures of the V formation of the 2 are asymmetrical and nonlinear, methods such as gradient methods or machine learning methods can be particularly advantageous in achieving accurate results.
• • Accuracy requirements: The required precision influences the choice of method. When high accuracy is required, optimization algorithms or precision-based step size adjustment methods can be used. For less stringent requirements, a gridding method or a coarser step size adjustment method may be sufficient.
• • Available resources: The available technical resources, such as computing power, power consumption, functional safety, storage space or measuring instruments, can influence the selection. More complex techniques such as machine learning methods may require more resources for training models or processing large amounts of data.
• • Context of application: The specific area of application and the underlying conditions also play a role. In some applications a quick but coarse approximation may be sufficient, while other applications require a detailed and precise determination.

Selecting the best method for determining the location of the top of the V formation requires careful consideration of these factors. It is often helpful to combine or adapt different procedures to achieve optimal results. It may be advisable to carry out prototyping or simulation to evaluate the performance of the different methods and identify the most appropriate solution for the specific situation

Determining the position of the V formation

The device presented here therefore enables the measurement of a two-dimensional field consisting of the total magnetic flux density B _Σ or the external magnetic flux density B _ext and microwave frequency ω _nk . (see also 51b) Depending on the applied microwave frequency ω _nk and the total magnetic flux density B _Σ , the V-formation consisting of the lower resonance edge 522 and the upper resonance edge 525 is at a different position in the two-dimensional field of the two measurement parameters total flux density B _Σ and microwave frequency ω _nk . The shape of the V formation made up of the lower resonance edge 522 and the upper resonance edge 25 remains unchanged.

The typically occurring task is therefore often to determine the exact position of the V-formation from the lower resonance edge 522 and the upper resonance edge 525 and the exact position of the tip 530 of this V-formation as precisely and quickly as possible in order to determine the values of the zero-point microwave frequency ω _µW0 and the zero point flux density B ₀ , which characterize the position 530 of the tip 530 of the V formation from the lower resonance edge 522 and the upper resonance edge 525, and then to draw conclusions about the measured values sought in each case.

Since the device can generally only measure a few, discrete points, the control device of the device preferably uses a computer-implemented iteration method in order to quickly refine the measured values. The document presented here therefore lists some possible methods that the control device of the device can use to specify the measuring points. When we talk about measurement parameters below, namely a first measurement parameter and a second measurement parameter, this means the two parameters magnetic flux density and microwave frequency. The X-Y plane means the plane consisting of these two measurement parameters. A key idea is that the control device uses advanced computer-implemented Kl methods to determine the next measurement points based on the previous measurement results, thereby increasing precision at maximum speed. A measuring point (also called the operating point of the system) typically always includes a specific value of the magnetic flux density and a specific value of the microwave frequency. The application of the following AI methods to fluorescence images is described here as an example for all images from magnetic field cameras - including those described above - in the document presented here.

Machine learning

1. 1. Neuronale Netzwerke: Neuronale Netzwerke sind eine leistungsstarke Methode im Bereich des Machine Learnings. Durch das Training eines neuronalen Netzwerks mit geeigneten Eingabe- und Ausgabedaten kann es eine Funktion erlernen, um den nächsten Messpunkt basierend auf den aktuellen Messungen vorherzusagen. Dabei können verschiedene Architekturen wie einfache Feedforward-Netzwerke oder rekurrente neuronale Netzwerke eingesetzt werden.
2. 2. Genetische Algorithmen: Genetische Algorithmen nutzen evolutionäre Prinzipien, um die optimale Lösung zu finden. Durch die Definition geeigneter Fitnessfunktionen und die Anwendung von genetischen Operatoren wie Mutation und Rekombination können genetische Algorithmen den nächsten Messpunkt schrittweise verbessern und anpassen, um die Lage der V-Formation zu bestimmen.
3. 3. Entscheidungsbäume: Entscheidungsbäume sind ein intuitives und interpretierbares Machine-Learning-Modell. Durch das Trainieren eines Entscheidungsbaums mit den vorhandenen Messdaten kann er verwendet werden, um den nächsten Messpunkt basierend auf den aktuellen Messungen auszuwählen. Die Entscheidungsbäume können in enger Verbindung mit anderen Methoden wie dem Random Forest eingesetzt werden, um die Vorhersagegenauigkeit zu verbessern.
4. 4. Support Vector Machines (SVM): SVM ist eine Methode des überwachten Lernens, die bei der Klassifizierung und Regression eingesetzt werden kann. Durch das Training einer SVM mit den vorhandenen Messdaten kann sie verwendet werden, um den nächsten Messpunkt vorherzusagen. SVM kann insbesondere dann nützlich sein, wenn die V-Formation nicht-linear separierbar ist.
5. 5. K-means-Clustering: K-means ist ein Clustering-Algorithmus, der verwendet werden kann, um die V-Formation in verschiedene Cluster zu unterteilen. Durch das Trainieren eines K-means-Modells mit den vorhandenen Messdaten können die Clusterzentren ermittelt werden, und der nächste Messpunkt kann in der Nähe des geeignetsten Clusterzentrums gewählt werden.

Various approaches can be used to determine the next measurement point from the next first measurement parameter and the next second measurement parameter using machine learning methods. Here are five popular machine learning methods to solve this problem:

1. 1. Neural Networks: Neural networks are a powerful method in the field of machine learning. By training a neural network with appropriate input and output data, it can learn a function to determine the next measurement point based on the current ones Predict measurements. Various architectures such as simple feedforward networks or recurrent neural networks can be used.
2. 2. Genetic Algorithms: Genetic algorithms use evolutionary principles to find the optimal solution. By defining appropriate fitness functions and applying genetic operators such as mutation and recombination, genetic algorithms can gradually improve and adjust the next measurement point to determine the location of the V formation.
3. 3. Decision trees: Decision trees are an intuitive and interpretable machine learning model. By training a decision tree with the existing measurement data, it can be used to select the next measurement point based on the current measurements. The decision trees can be used in close conjunction with other methods such as random forest to improve prediction accuracy.
4. 4. Support Vector Machines (SVM): SVM is a supervised learning method that can be used in classification and regression. By training an SVM with the existing measurement data, it can be used to predict the next measurement point. SVM can be particularly useful when the V formation is non-linearly separable.
5. 5. K-means clustering: K-means is a clustering algorithm that can be used to divide the V-formation into different clusters. By training a K-means model with the existing measurement data, the cluster centers can be determined and the next measurement point can be chosen near the most appropriate cluster center.

It is important to note that choosing the best method depends on various factors, including the available data, the number of measurements, the accuracy requirements, and the context of the application. Choosing the right machine learning method may require experimentation and evaluation of the performance of different approaches.

Optimization algorithms

1. 1. Gradientenabstieg: Der Gradientenabstieg ist ein Optimierungsalgorithmus, der versucht, das Minimum einer Funktion zu finden, indem er entlang des negativen Gradienten schrittweise absteigt. In diesem Fall könnte der Algorithmus den negativen Gradienten des Betrags des Gradienten des Sensorelementmesswerts nach dem ersten und zweiten Messparameter berechnen und den nächsten Messpunkt basierend auf der Abstiegsrichtung auswählen.
2. 2. Genetische Algorithmen: Genetische Algorithmen können auch für die Optimierung des nächsten Messpunkts verwendet werden. Indem sie eine Population von Kandidatenlösungen verwenden und genetische Operatoren wie Rekombination und Mutation anwenden, können genetische Algorithmen die Lage der V-Formation schrittweise verbessern und den nächsten Messpunkt bestimmen.
3. 3. Partikelschwarmoptimierung (PSO): Bei der Partikelschwarmoptimierung wird eine Gruppe von virtuellen Partikeln verwendet, die sich durch den Suchraum - hier der Ebene aus magnetischer Flussdichte und Mikrowellenfrequenz bewegen. Jedes virtuelle Partikel speichert seine eigene Position und Geschwindigkeit und passt diese anhand des bisher besten Ergebnisses und des global besten Ergebnisses nach der Messung an. Durch die Interaktion und Zusammenarbeit der Partikel kann PSO eine gute Lösung finden, indem es den Suchraum effektiv erkundet.
4. 4. Nelder-Mead-Algorithmus: Der Nelder-Mead-Algorithmus ist ein direkter Optimierungsalgorithmus, der ohne Gradienteninformationen auskommt. Er verwendet ein Simplex, das eine geometrische Struktur im Suchraum darstellt. Der Algorithmus führt Iterationen durch, bei denen er die besten, schlechtesten und mittleren Punkte des Simplex verwendet, um die nächste Position zu bestimmen. Dieser Algorithmus kann effektiv sein, wenn der Suchraum nicht differenzierbar ist.
5. 5. Simulated Annealing: Simulated Annealing ist ein probabilistischer Optimierungsalgorithmus, der von der Metallbearbeitungstechnik „annealing“ inspiriert ist. Der Algorithmus simuliert das Erwärmen und langsames Abkühlen eines Metalls, um seine Kristallstruktur zu optimieren. Ähnlich wird beim Simulated Annealing der Suchraum erkundet und gelegentlich schlechtere Lösungen akzeptiert, um aus lokalen Minima zu entkommen und ein globales Minimum zu finden.

Various optimization algorithms can be used to determine the next measurement point from the next first measurement parameter and the next second measurement parameter. Here are five example optimization algorithms that could be relevant for this sensor system during rework:

1. 1. Gradient Descent: Gradient descent is an optimization algorithm that attempts to find the minimum of a function by descending stepwise along the negative gradient. In this case, the algorithm could calculate the negative gradient of the magnitude of the gradient of the sensor element reading according to the first and second measurement parameters and select the next measurement point based on the descent direction.
2. 2. Genetic algorithms: Genetic algorithms can also be used to optimize the next measurement point. By using a population of candidate solutions and applying genetic operators such as recombination and mutation, genetic algorithms can gradually improve the location of the V formation and determine the next measurement point.
3. 3. Particle swarm optimization (PSO): Particle swarm optimization uses a group of virtual particles that move through the search space - here the plane of magnetic flux density and microwave frequency. Each virtual particle saves its own position and speed and adjusts these based on the best result so far and the global best result after the measurement. Through the interaction and collaboration of the particles, PSO can find a good solution by effectively exploring the search space.
4. 4. Nelder-Mead algorithm: The Nelder-Mead algorithm is a direct optimization algorithm that does not require gradient information. It uses a simplex that represents a geometric structure in the search space. The algorithm performs iterations using the best, worst, and middle points of the simplex to determine the next position. This algorithm can be effective when the search space is not differentiable.
5. 5. Simulated Annealing: Simulated Annealing is a probabilistic optimization algorithm inspired by the metalworking technique “annealing”. The algorithm simulates heating and slowly cooling a metal to optimize its crystal structure. Similarly, simulated annealing explores the search space and occasionally accepts worse solutions to escape from local minima and find a global minimum.

It is important to note that the selection of the most appropriate optimization algorithm depends on various factors, including the complexity of the V-formation and the internal structures of the V-formation that may be considered, the number of measurements available, the accuracy requirements, and the available resources . Choosing the right optimization algorithm may require experimentation and evaluation of the performance of different approaches.

Machine learning methods similar to Bayesian optimization

• • Bayes'sche Optimierung: Die Bayes'sche Optimierung ist eine probabilistische Methode zur globalen Optimierung unter Unsicherheit. Sie kombiniert die Modellierung der Zielfunktion mit einer Bayesianischen Wahrscheinlichkeitsschätzung, um eine möglichst effiziente Suche nach dem optimalen Punkt zu ermöglichen. Dabei wird ein probabilistisches Modell erstellt, das die Zusammenhänge zwischen den Eingangsparametern (erster Messparameter und zweiter Messparameter) und den Zielfunktionswerten (Position der V-Formation) erfasst. Aufgrund dieser Modellierung wird eine probabilistische Suche durchgeführt, die die Exploration des Suchraums mit der Ausbeutung bereits bekannter guter Bereiche kombiniert. Die Bayes'sche Optimierung kann daher dazu beitragen, mit möglichst wenigen Iterationen die Lage und die Position der Spitze der V-Formation zu bestimmen.
• • Random Forest Regression: Random Forest Regression ist eine Ensemble-Methode, die auf Entscheidungsbäumen basiert. Sie kann verwendet werden, um die Beziehung zwischen den Eingangsparametern (erster Messparameter, zweiter Messparameter) und den Zielfunktionswerten (Position der V-Formation) zu modellieren. Durch den Einsatz mehrerer Entscheidungsbäume, die zufällig erstellt werden und eine Vorhersage treffen, kann ein robustes Modell erstellt werden, das auch nichtlineare Zusammenhänge erfassen kann.
• • Gaussian Process Regression: Gaussian Process Regression ist eine nichtparametrische Methode, die die Unsicherheit in den Daten berücksichtigt. Sie verwendet einen Satz von Funktionen, um die Zusammenhänge zwischen den Eingangsparametern und den Zielfunktionswerten zu modellieren. Dabei wird eine Verteilung über mögliche Funktionen erstellt, die zu den beobachteten Daten passen. Diese Methode kann effektiv sein, um die Unsicherheit in den Vorhersagen zu quantifizieren und eine gute Schätzung der Position der V-Formation zu liefern.
• • Künstliche Neuronale Netze: Künstliche Neuronale Netze sind eine leistungsstarke Klasse von Machine-Learning-Modellen, die in der Lage sind, komplexe Zusammenhänge zwischen den Eingangsparametern und den Zielfunktionswerten zu modellieren. Durch das Training eines neuronalen Netzes auf den vorhandenen Daten kann eine Funktion erlernt werden, die den nächsten Messpunkt vorhersagt. Künstliche Neuronale Netze können sowohl für Regression als auch für Klassifikation eingesetzt werden und bieten Flexibilität und hohe Kapazität zur Modellierung komplexer Vorgänge.
• • Gradientenbasierte Optimierung: Bei der gradientenbasierten Optimierung wird der Gradient der Zielfunktion bezüglich der Eingangsparameter berechnet und zur Bestimmung des nächsten Messpunkts verwendet. Der Gradient zeigt die Richtung des steilsten Anstiegs der Zielfunktion an, was darauf hinweist, in welche Richtung die Parameter angepasst werden müssen, um eine Verbesserung zu erzielen.
• • Ein bekannter Algorithmus für die gradientenbasierte Optimierung ist das Gradientenabstiegsverfahren. Es beginnt mit einem initialen Messpunkt und iterativ wird der Gradient an diesem Punkt berechnet. Anschließend wird der nächste Messpunkt entlang des negativen Gradienten gewählt, um die Zielfunktion zu minimieren. Dieser Prozess wird solange wiederholt, bis ein Konvergenzkriterium erfüllt ist oder eine ausreichend gute Lösung gefunden wurde.
• • Das Gradientenabstiegsverfahren kann effektiv sein, wenn die Zielfunktion differenzierbar ist und die Parameter einen stetigen Suchraum bilden. Allerdings kann es in komplexen Optimierungsproblemen stecken bleiben, wenn das Verfahren in lokale Minima oder Sattelpunkte gerät. Um diesem Problem entgegenzuwirken, können Techniken wie Momentum, AdaGrad oder Adam angewendet werden, um die Konvergenz zu beschleunigen und lokale Minima zu umgehen.

To determine the next measurement point from the next first measurement parameter and the next second measurement parameter to determine the position of the V-formation in the XY plane, various machine learning methods similar to Bayesian optimization could be used. Here are five key methods that might be relevant in this context:

• • Bayesian optimization: Bayesian optimization is a probabilistic method for global optimization under uncertainty. It combines modeling of the objective function with Bayesian probability estimation to enable the most efficient search for the optimal point. A probabilistic model is created that captures the relationships between the input parameters (first measurement parameter and second measurement parameter) and the objective function values (position of the V-formation). Based on this modeling, a probabilistic search is carried out that combines the exploration of the search space with the exploitation of already known good areas. Bayesian optimization can therefore help determine the location and position of the tip of the V formation with as few iterations as possible.
• • Random Forest Regression: Random Forest Regression is an ensemble method based on decision trees. It can be used to model the relationship between the input parameters (first measurement parameter, second measurement parameter) and the objective function values (V-formation position). By using multiple decision trees that are created randomly and make a prediction, a robust model can be created that can also capture non-linear relationships.
• • Gaussian Process Regression: Gaussian Process Regression is a non-parametric method that takes into account the uncertainty in the data. It uses a set of functions to model the relationships between the input parameters and the objective function values. This creates a distribution of possible functions that fit the observed data. This method can be effective in quantifying the uncertainty in the predictions and providing a good estimate of the position of the V formation.
• • Artificial Neural Networks: Artificial Neural Networks are a powerful class of machine learning models that are capable of modeling complex relationships between the input parameters and the objective function values. By training a neural network on the existing data, a function can be learned that predicts the next measurement point. Artificial neural networks can be used for both regression and classification and offer flexibility and high capacity for modeling complex processes.
• • Gradient-based optimization: In gradient-based optimization, the gradient of the objective function is calculated with respect to the input parameters and used to determine the next measurement point. The gradient indicates the direction of the steepest increase of the objective function, indicating in which direction the parameters need to be adjusted to achieve an improvement.
• • A well-known algorithm for gradient-based optimization is the gradient descent method. It starts with an initial measurement point and the gradient at this point is calculated iteratively. The next measurement point along the negative gradient is then chosen to minimize the objective function. This process is repeated until a convergence criterion is met or a sufficiently good solution is found.
• • The gradient descent method can be effective if the objective function is differentiable and the parameters form a continuous search space. However, it can get stuck in complex optimization problems if the method runs into local minima or saddle points. To counteract this problem, techniques such as Momentum, AdaGrad or Adam can be applied to accelerate convergence and avoid local minima.

It should be noted that gradient-based optimization does not explicitly target Bayesian optimization. Bayesian optimization uses probabilistic models to model the search space and find a balance between exploration and exploitation. In contrast, the optimized Gradient-based method directly determines the value of the objective function and does not explicitly consider the uncertainty. However, both approaches can be used in combination, for example by using Bayesian optimization for global search and gradient-based optimization for fine-tuning close to a solution.

Gradient-based optimization is used to determine the next measurement point in the direction of the steepest slope of the objective function. This approach requires that the objective function be differentiable in order to calculate the gradient. By using the gradient, the sensor system controller can iteratively adjust the next measurement point to locate the V formation in the X-Y plane.

• • Gradientenabstieg: Beim Gradientenabstieg wird der Gradient der Zielfunktion berechnet und entgegengesetzt zur Richtung des steilsten Abstiegs der Zielfunktion verwendet. Der Algorithmus aktualisiert iterativ die Werte der Eingangsparameter (erster Messparameter, zweiter Messparameter), um den nächsten Messpunkt näher an die Spitze der V-Formation zu bringen. Der Gradientenabstieg ist ein einfacher und weit verbreiteter Optimierungsalgorithmus, der jedoch möglicherweise in lokalen Minima stecken bleiben kann.
• • Stochastischer Gradientenabstieg: Der stochastische Gradientenabstieg ist eine Variante des Gradientenabstiegs, bei der der Gradient auf Basis einer zufälligen Teilmenge der verfügbaren Datenpunkte berechnet wird. Anstatt den Gradienten über den gesamten Datensatz zu berechnen, wird der stochastische Gradientenabstieg verwendet, um die Berechnung des Gradienten effizienter zu gestalten und die Konvergenz zu beschleunigen. Dieser Algorithmus eignet sich gut für große Datensätze und kann die Anzahl der benötigten Iterationen reduzieren.

To make the search more efficient, various optimization algorithms based on the gradient can be used. Here are two important optimization algorithms:

• • Gradient descent: With gradient descent, the gradient of the objective function is calculated and used in the opposite direction to the direction of the steepest descent of the objective function. The algorithm iteratively updates the values of the input parameters (first measurement parameter, second measurement parameter) to bring the next measurement point closer to the top of the V formation. Gradient descent is a simple and widely used optimization algorithm, but it can potentially get stuck in local minima.
• • Stochastic gradient descent: Stochastic gradient descent is a variant of gradient descent in which the gradient is calculated based on a random subset of the available data points. Instead of calculating the gradient over the entire data set, stochastic gradient descent is used to make the calculation of the gradient more efficient and speed up convergence. This algorithm works well for large data sets and can reduce the number of iterations required.

These optimization algorithms can be used to determine the next measurement point from the next first measurement parameter and the next second measurement parameter and thus determine the position of the V formation in the XY plane. By applying machine learning methods and optimization algorithms, the sensor system can determine the location and position of the V-formation with as few iterations as possible and precisely locate the tip of the V-formation in the X-Y plane.

Random forest regression

In one embodiment, the sensor system includes a control device that is able to set the first measurement parameter within a specific measurement parameter interval and also to set the second measurement parameter within another measurement parameter interval. A sensor element is used to determine a sensor element measurement value for a set measuring point. The measured value depends on the values of the first and second measurement parameters. To precisely determine the next measuring point with as few iterations as possible, a computer-implemented random forest regression method is used.

In one version of the proposal, the computer-implemented method of random forest regression is used to determine the position of the tip of the V-formation or a functionally equivalent piece of information in the X-Y plane. The first measurement parameter is used as the X coordinate and the second measurement parameter as the Y coordinate. This enables efficient position determination of the V formation.

In addition, the control device maintains the specific position of the lower tip of the V-formation for use by a higher-level system. This ensures that the data determined can be used by other systems.

The sensor system combines the computer-implemented method of random forest regression with the sensor element and the control device to determine the position of the lower tip of the V-formation based on the measurement parameters and make it available for use by a higher-level system. The computer-implemented method of random forest regression is stored on a memory-based medium and is executed by a processor of the control device. The storage-based medium can be, for example, a computer program product, a hard drive, a flash drive Be memory or another non-volatile storage medium. This implementation enables efficient and reliable determination of the position of the V formation.

The control device of the sensor system includes a processor and a memory. The memory contains the code for the computer-implemented method of random forest regression, while the processor retrieves the code from the memory and executes it. This ensures that the procedure is carried out correctly and efficiently.

In a variant of the proposal, the sensor system can include a communication interface that enables data transmission between the sensor system and other systems. This means that the determined position data of the V formation can easily be passed on to other systems and used for further processing.

Furthermore, the sensor system can be connected to a database system in which the determined position information of the V formation is stored. This enables simple and structured management of position data for future analyzes or evaluations.

Another advantage of the sensor system is that the computer-implemented random forest regression method can be flexibly adapted. By adding or removing training data, the process can be improved and adapted to different usage scenarios. This enables optimal performance of the sensor system in various application areas and environments.

Another advantage of the sensor system is its scalability. By using storage media such as RAM or NVM, the sensor system can be easily adapted to the requirements of the respective application. This enables efficient and reliable processing of large amounts of data.

In addition, the sensor system provides high accuracy and precision in determining the position of the V formation. By combining the sensor element with the computer-implemented random forest regression method, possible measurement errors are minimized and measurement accuracy is maximized.

Another important aspect of the sensor system is its robustness and reliability. By using modern technologies and high-quality materials, the sensor system ensures long-term and stable performance even under demanding conditions.

In summary, the sensor system with the control device, the sensor element and the computer-implemented random forest regression method offers an efficient, precise and reliable solution for determining the position of a V-formation. The flexibility, scalability and high accuracy of the system make it ideal for various applications in areas such as aviation, logistics or even animal behavior. By using modern technologies and materials, the sensor system sets new standards in position determination and enables innovative solutions to the challenges of our time.

Gaussian process regression

In a further embodiment of the sensor system, the sensor system comprises a control device for setting a first measurement parameter within a first measurement parameter interval and a second measurement parameter within a second measurement parameter interval. A sensor element determines a sensor element measurement value depending on the measurement parameters set for a specific measuring point. The sensor system uses a computer-implemented Gaussian Process Regression method that is applied by the control device to determine the next measurement point based on the next first measurement parameter and the next second measurement parameter with as few iterations as possible.

In one version of the sensor system, the computer-implemented method of Gaussian Process Regression is used to determine the position of the V formation in the X-Y plane from the first measurement parameter as the X coordinate and the second measurement parameter as the Y coordinate. By precisely determining the position of the tip (30) of the V-formation, the sensor system enables precise positioning.

In a further embodiment, the sensor system is used to determine the position of the tip (30) of the V-formation in the XY plane from the first measurement parameter as the X coordinate and the second measurement parameter as the Y coordinate. This enables accurate capture and provision of the tip position, which can be used by a higher-level system to enable optimal coordination and control of processes involving the position of the V-formation, in particular the tip (30) of the V-formation, and /or the value of information derived from it and/or the value of functionally equivalent information is important.

The computer-implemented method of Gaussian Process Regression in conjunction with the sensor element and the control device enables precise and efficient determination of the position of the lower tip of the V-formation based on the measurement parameters. This is achieved by using steps to optimize the next measurement points based on the uncertainty of the predictions and adaptively adjusting the distribution of measurement points to determine the location of the V formation more efficiently.

Another advantage of the sensor system is that the computer-implemented Gaussian Process Regression method is stored on a memory-based medium and is executed by a processor of the control device. The storage-based medium may be, for example, a computer program product, a hard drive, flash memory, or other non-volatile storage medium (NVM). This increases the flexibility and scalability of the system.

In a variant of the proposal, the control device of the sensor system comprises a processor and a memory, the memory containing the code for the computer-implemented Gaussian Process Regression method and the processor retrieving and executing the code from the memory. This ensures efficient execution of the method and enables a quick and precise determination of the position of the V-formation, in particular the tip (30) of the V-formation, and/or information derived therefrom and/or functionally equivalent information.

It should be noted that the present description provides additional explanations of the operation of the sensor system and the computer-implemented Gaussian Process Regression method. By applying Gaussian Process Regression, the next measurement points are determined based on the next first and second measurement parameters. As few iterations as possible are needed to ensure high accuracy and efficiency.

The use of Gaussian Process Regression allows the location of the V formation in the X-Y plane to be precisely determined by using the first measurement parameter as the X coordinate and the second measurement parameter as the Y coordinate. By efficiently detecting the position of the V-formation, in particular the tip (30) of the V-formation, and/or information derived therefrom and/or functionally equivalent information, the sensor system can be used in various applications.

The control device of the sensor system stores the specific position value of the V-formation, in particular the tip (30) of the V-formation, and/or information derived therefrom and/or functionally equivalent information for use by a higher-level system. This enables seamless integration of the sensor system into a comprehensive system and provides a reliable information basis for higher-level processes.

By combining the computer-implemented Gaussian Process Regression method with the sensor element and the control device, the measurement parameters are used to determine the position of the V-formation, in particular the tip (30) of the V-formation, and/or information derived therefrom and/or to precisely determine functionally equivalent information n and keep it available for use by a higher-level system. This integration enables precise control and optimal use of the V-formation in various applications.

In summary, the sensor system with the computer-implemented Gaussian Process Regression method offers an efficient and precise method for determining the position of the V-formation. The use of a memory-based medium containing the code for the method and the integration of a processor enable optimal execution of the method. This achieves accurate positioning results and provides a reliable basis for higher-level systems.

artificial neural network models

In a further embodiment of the sensor system, the control device comprises a processor unit (control device CTR) and a storage medium (RAM, NVM), wherein the storage medium (RAM, NVM) preferably contains the code for the computer-implemented method using artificial neural network models and the processor unit contains the code from the storage medium and executes it. This ensures efficient execution of the method and enables quick and precise determination of the position of the tip 30 of the V-formation or functionally equivalent information.

In a variant of the proposal, the computer-implemented method using artificial neural network models is used to determine the location of the V formation in the X-Y plane based on the first measurement parameter as the X coordinate and the second measurement parameter as the Y coordinate. By using this method with as few iterations as possible, a high level of accuracy and efficiency in position detection is achieved.

The control device of the sensor system keeps the specific position of the V-formation, in particular the tip (30) of the V-formation, and/or information derived therefrom and/or functionally equivalent information available for use by a higher-level system. This enables seamless integration of the sensor system into a comprehensive system and creates a reliable information basis for higher-level processes.

The computer-implemented method using artificial neural network models is preferably stored on a memory-based medium, such as a RAM (Random Access Memory) or an NVM (Non-Volatile Memory), and is executed by the processor unit of the control device. This storage and execution enable optimal use and scalability of the process.

The sensor system thus offers an efficient and precise method for determining the position of the tip 30 of the V-formation or functionally equivalent information. By using artificial neural network models in combination with the sensor element and the control device, the measurement parameters are used to precisely determine the position and make it available for use by a higher-level system. This allows for precise control and optimal use of the V-formation in various applications.

Furthermore, the sensor system is flexible and versatile because it supports various types of memory-based media, such as computer program products, hard drives, flash memory or other non-volatile storage media. This allows the sensor system to be adapted to the specific requirements and circumstances of the respective application.

Gradient-based optimization

In a further embodiment of the sensor system, a computer-implemented method of gradient-based optimization is used to determine the exact position of the tip 30 of the V-formation or a functionally equivalent position in the XY plane. The method uses the control device to determine the next measurement point based on the first and second measurement parameters with as few iterations as possible.

The sensor system enables precise determination of the position of the tip 30 of the V formation or a functionally equivalent position through the use of the computer-implemented method of gradient-based optimization. The controller ensures that the first and second measurement parameters are adjusted within their respective intervals to achieve accurate measurements. By applying the gradient-based optimization method, the next measurement points are determined with high efficiency and accuracy, enabling precise position detection.

The combination of the sensor element and the control device enables the precise determination of the position of the tip 30 of the V-formation and/or a functionally equivalent position. The sensor system can provide the position information for a variety of applications such as aviation, robotics, logistics and agriculture.

Using the computer-implemented method of gradient-based optimization offers numerous advantages. By using the gradient of the sensor element measurement value according to the measurement parameters, accurate and efficient measurement points can be determined. The method also enables adaptive steps to adjust the step size or method, resulting in improved adaptability. In addition, other optimization techniques such as conjugate gradients or L-BFGS can be used to achieve an even more efficient and precise determination of the positions.

The sensor system preferably includes the control device includes a processor and a non-volatile memory that contains the code for the computer-implemented method of gradient-based optimization. This allows the processor to retrieve and execute the code to enable the determination of the positions of the V-formation, in particular the tip (30) of the V-formation, and/or information derived therefrom and/or functionally equivalent information. Using a non-volatile storage medium ensures that the code is stored permanently and can be retrieved at any time.

The user interface of the sensor system allows the user to adjust the measurement parameter interval settings and obtain the position detection results. This enables user-friendly adaptation to different requirements and application scenarios.

The sensor system is capable of determining the position of the tip 30 of the V formation or a functionally equivalent position in real time and transmitting the results to a higher-level system. This enables real-time monitoring and processing of position data for rapid response and decision making.

In addition to the description of the sensor system, the patent application also includes further claims. In a variant of the proposal, a computer-implemented device can be provided for carrying out the method. This device includes a processor (control device CTR) and a memory (RAM, NVM) that contains the code for the computer-implemented method and is retrieved and executed by the processor (control device CTR).

Another storage medium (RAM, NVM) can be used to store the code for the computer-implemented method. This storage medium (RAM, NVM) is used in conjunction with the sensor system control device.

A user interface allows setting the measurement parameter intervals and retrieving the position detection results. This allows the user to easily interact with the sensor system.

The higher-level system communicates with the sensor system and receives the position results. These results can be used for further processing or display, for example to enable coordinated behavior of multiple sensor systems. By exchanging position data between individual sensor systems, they can work together on a task, such as monitoring a large area or carrying out cooperative processes and procedures.

In addition, the sensor system offers the possibility of integration with other systems or platforms. For example, it could be integrated into an aircraft or drone to enable precise in-flight positioning by using the Earth's magnetic field. It could also be integrated into autonomous vehicles to improve their navigation and avoid collisions.

The sensor system could also be used in agriculture to determine the position of agricultural equipment or vehicles and help them perform tasks such as plowing, sowing or harvesting. Precise positioning can help improve the efficiency and accuracy of agricultural processes.

Furthermore, the sensor system could be used in robotics to detect the position of robots in a production environment or in other applications. This allows robots perform precise tasks, avoid collisions, and collaborate efficiently with other robots or human workers.

Overall, the sensor system described with its computer-implemented method of gradient-based optimization enables a precise and efficient determination of the position of the V-formation, in particular the tip (30) of the V-formation, and/or information derived therefrom and/or functionally equivalent information. By integrating into various systems and applications, it opens up a variety of opportunities to improve processes, security and coordination.

Gradient descent

In a further embodiment of the sensor system, the higher-level system communicates with the sensor system and receives the position results. These results, representing the position of the lower tip 30 of the V formation in the X-Y plane or functionally equivalent information, may be used for further processing or display, for example to enable coordinated behavior of multiple sensor systems.

The sensor system uses a computer-implemented gradient descent method to determine, with as few iterations as possible, the position of the lower tip 30 of the V formation in the XY plane or functionally equivalent information from the first measurement parameter as the X coordinate and the second measurement parameter as the Y coordinate. The gradient descent method enables efficient and accurate positioning by using adaptive steps to adjust the step size or method. This allows the next measuring point to be determined precisely.

To further improve accuracy and efficiency, other optimization techniques such as conjugate gradients or L-BFGS (limited memory Broyden-Fletcher-Goldfarb-Shanno) can also be added to the computer-implemented gradient descent method. These techniques help to more precisely determine the position of the lower tip 30 of the V formation in the X-Y plane or functionally equivalent information.

To increase user-friendliness, the control device has a user interface that allows the user to adjust settings such as the first measurement parameter interval and the second measurement parameter interval. In addition, the results of the positioning can be accessed via the user interface.

The sensor system is able to determine the position of the lower tip 30 of the V formation in the X-Y plane or functionally equivalent information in real time and to transmit the results to the higher-level system in real time. This enables real-time monitoring and control.

To implement the method described, a computer-implemented device is provided which includes a processor and a memory. Memory contains the code for the computer-implemented gradient descent method, while the processor retrieves the code from memory and executes it.

In addition, a non-volatile storage medium (NVM) is preferably provided which stores the code for the computer-implemented gradient descent method and is used in conjunction with the control device of the sensor system. This means that the process can also be transferred to other systems or platforms and used there

The user interface allows the user to adjust the measurement parameter intervals and retrieve the positioning results. This increases the flexibility and adaptability of the sensor system. The user can adjust the measurement parameter intervals depending on the specific requirements and environmental conditions to achieve optimal results. The user can be a device.

In addition, the user interface enables the user to conveniently access the determined position data of the V-formation, in particular the tip (30) of the V-formation, and/or information derived therefrom and/or functionally equivalent information. This information can be used for can be used for various purposes, for example for monitoring and analyzing the V-formation or for integration into a higher-level system.

The use of the computer-implemented method of gradient descent in conjunction with adaptive steps and further optimization techniques ensures efficient and precise position determination of the V-formation, in particular the tip (30) of the V-formation, and/or information derived therefrom and/or functionally equivalent information. By adjusting the step size or step method, the sensor system can determine the position with high precision while minimizing the calculation effort.

The real-time capability of the sensor system enables rapid and continuous recording of the position data of the V-formation, in particular the tip (30) of the V-formation, and/or information derived therefrom and/or functionally equivalent information. This is particularly important in applications where real-time information is required, for example to ensure smooth navigation or coordination of multiple sensor systems.

The implementation of the computer-implemented gradient descent method in a computer-implemented device with a processor (control device CTR) and memory (RAM, NVM) offers an efficient and flexible solution. The code for the method can be stored on the storage medium as memory (RAM, NVM) and can be retrieved and executed by the processor when necessary. This enables easy integration of the sensor system into existing systems or platforms.

The non-volatile storage medium (NVM) serves as a reliable and permanent storage of the code for the procedure. This allows the sensor system to maintain its functionality and resume seamlessly even after a restart or power failure.

Overall, the sensor system with the computer-implemented method of gradient descent enables precise, efficient and real-time position determination of the lower tip 30 of the V-formation or functionally equivalent information. The user interface, customization options and integration into existing systems contribute to the versatility and applicability of the sensor system. By improving the position determination of the V-formation, in particular the tip (30) of the V-formation, and/or information derived therefrom and/or functionally equivalent information in various areas of application, the sensor system can contribute to optimized performance and efficiency.

stochastic gradient descent

In a further embodiment of the sensor system, a computer-implemented method of stochastic gradient descent is used to determine the next measurement point from the next first and second measurement parameters. As a result, the position of the tip 30 of the V formation or functionally equivalent information in the XY plane is determined with as few iterations as possible. The method uses the first measurement parameter as the X coordinate and the second measurement parameter as the Y coordinate. The sensor system controller applies adaptive steps to adjust the step size or method, enabling efficient and accurate position determination.

The use of stochastic gradient descent in conjunction with adaptive steps allows the sensor system to determine precise measurement points and accurately capture the position of the top 30 of the V-formation or functionally equivalent information. By adjusting the step size or step method, the sensor system can determine the position with high precision while minimizing the calculation effort.

The use of further optimization techniques such as Momentum or Nesterov Momentum improves the efficiency of stochastic gradient descent and contributes to more precise positioning.

These techniques enable the sensor system to find converging solutions more quickly and overcome potential local minima.

The control device of the sensor system is equipped with a user interface that allows the user, who can also be a device, to adjust the measurement parameter interval and the To retrieve results of the position determination of the V-formation, in particular the tip (30) of the V-formation, and/or information derived therefrom and/or functionally equivalent information. The user interface offers interactive setting options, e.g. B. Sliders or input fields to adjust the measurement parameter interval. In addition, it is preferably designed for intended use by human users to provide a graphical user interface that visually represents the position of the top 30 of the V formation or the functionally equivalent information on a diagram in the XY plane and displays the numerical coordinates .

By using the computer-implemented method of stochastic gradient descent in conjunction with adaptive steps and other optimization techniques, the sensor system ensures efficient and accurate position determination of the V-formation and/or functionally equivalent information. The user interface allows easy adjustment of the measurement parameter intervals and convenient access to the results. These functions contribute to the flexibility and adaptability of the sensor system.

The sensor system can determine the position of the tip 30 of the V formation or functionally equivalent information in real time and transmit the results in real time to a higher-level system. This enables fast and continuous capture of position data and is particularly important in applications where real-time information is required, for example for precise navigation or the coordination of multiple sensor systems.

Gradient-based optimization

In a further embodiment of the sensor system, a control device is provided which is able to set a first measurement parameter within a first measurement parameter interval and to set a second measurement parameter within a second measurement parameter interval. A sensor element is also present, which delivers a sensor element measurement value depending on the measurement parameters set. The control device uses a computer-implemented gradient-based optimization method to determine the next measurement point based on the next measurement parameters. Furthermore, the sensor system includes a system for determining the position of the tip of a V formation in the XY plane or functionally equivalent information, the position being defined by the X coordinate of the first measurement parameter and the Y coordinate of the second measurement parameter. A storage device is used to hold the specific position of the V-formation or the functionally equivalent information for use by a higher-level system. There is also a user interface that allows setting the measurement parameter intervals and obtaining the results of the V-formation position or functional equivalent information. A device can be a user.

In a variant of the proposal, a device for carrying out the method according to the previous section can be provided. This device includes a processor (control device CTR) for executing the computer-implemented method of gradient-based optimization and for controlling the sensor system. There is also a memory that stores the code for the computer-implemented method and the necessary data. A non-volatile storage medium is used in conjunction with the sensor system controller to store the code for the procedure and the required data.

In one embodiment, the control device of the sensor system can carry out an adaptive step size adjustment as part of the computer-implemented method of gradient-based optimization in order to improve the convergence of the method. In another embodiment, the control device may perform step process adjustment as part of the method to optimize efficiency. Another possibility is that the control device carries out an adaptive adjustment of the measurement parameter intervals based on the course of the gradient-based optimization method in order to accelerate the search for the position of the V formation.

The sensor element and/or the sensor system may have a noise suppression function to reduce interference on the measured values and to improve the accuracy of determining the position of the V-formation. The user interface may additionally enable visualization of the position of the V formation on the X-Y plane to provide the user with an intuitive representation of the determined position. The storage device can store additional information about the V formation to enable comprehensive characterization.

The computer-implemented method of gradient-based optimization can use various optimization techniques to determine the next measurement point based on the next measurement parameters. Examples of such techniques are the steepest descent method or the Newton method. The selection of the appropriate optimization technique may depend on the specific requirements of the sensor system.

Determining the position of the top of a V formation in the X-Y plane or functionally equivalent information can be useful in various applications. For example, the sensor system could be used in aviation to determine the position of an aircraft formation. In robotics it could be used to determine the position of a robot. The possible applications are diverse and depend on the specific requirements of the respective system.

Overall, the proposed sensor system with the computer-implemented method of gradient-based optimization offers an efficient and precise method for determining the position of a V-formation. By integrating features such as noise reduction, visualization and storage, a comprehensive characterization of the V-formation is possible. This can lead to improved control, monitoring or analysis in various application areas.

Simulated annealing

The sensor system includes a control device that serves to set a first measurement parameter within a first measurement parameter interval and a second measurement parameter within a second measurement parameter interval. A sensor element determines a sensor element measurement value depending on the set measurement parameters. The sensor system is preferably able to form measuring points in the Cartesian coordinate system, with the first measuring parameter determining the x-coordinate on the x-axis and the second measuring parameter determining the y-coordinate on the y-axis and the sensor element measurement value determining the z-coordinate the z-axis is determined.

Furthermore, the sensor system can determine and output the position 30 of the lower tip of a V formation on the XY plane or functionally equivalent information that can be derived from the first measurement parameter as the X coordinate and the second measurement parameter as the Y coordinate.

To determine the position 30 of the lower tip of the V-formation or the functionally equivalent information, the control device uses the computer-implemented method of simulated annealing. This method makes it possible to determine the next measurement point based on the next measurement parameters to determine the position 30 of the lower tip of the V formation or the functionally equivalent information with as few iterations as possible. The calculated position 30 of the lower tip of the V-formation or the functionally equivalent information is then maintained for use by a higher-level system.

In addition to the features mentioned above, the sensor system includes other functional properties and advantages. A communication interface of the sensor system (e.g. a data interface) enables the determined position 30 of the lower tip of the V-formation or the functionally equivalent information to be transmitted to the higher-level system. A storage unit in the control device contains a storage medium on which the computer-implemented method of simulated annealing is stored. A data analysis unit (e.g. as part of the control device CTR and/or pattern recognition device MEV) carries out an analysis of the acquired sensor element measurements and/or the filter output signal (S4) in order to recognize patterns or structures and the determination of the position 30 of the lower tip of the V-formation or the functionally equivalent information.

The user interface allows a user to make inputs for adjusting the measurement parameters and controlling the simulated annealing process. The user can be a device. A calibration unit (e.g. as part of the control device CTR and/or pattern recognition device MEV) makes it possible to calibrate the sensor system based on known reference values and to ensure an accurate determination of the position 30 of the lower tip of the V-formation or the functionally equivalent information.

By using a high-resolution sensor system in the sensor element, precise sensor element measurement values are delivered, which leads to an exact determination of the position 30. This enables a precise localization of the lower tip of the V formation or an accurate determination of the functionally equivalent information.

Nelder-Mead algorithm

In a further embodiment of the sensor system, a first measurement parameter is set within a first measurement parameter interval and a second measurement parameter within a second measurement parameter interval by a control device. A sensor element measurement value for a set measuring point is determined by a sensor element based on the first measurement parameter and the second measurement parameter. The measured value of the sensor element is entered into a three-dimensional Cartesian coordinate system, whereby the x coordinate on the x axis is determined by the first measurement parameter and the y coordinate on the y axis is determined by the second measurement parameter. The z coordinate on the z axis is determined by the measured value of the sensor element. A position detection unit detects that the maxima of the magnitude of the gradient of the measured value of the sensor element according to the x coordinate and the y coordinate result in a V formation on the XY plane with a peak 30 of this V formation. The task of the sensor system is to determine and output the position 30 of this lower tip of this V formation in the XY plane and/or functionally equivalent information.

According to one embodiment of the sensor system according to the previous section, the control device will use the Nelder-Mead algorithm, a computer-implemented method, to determine the next measurement point from a next first measurement parameter and a next second measurement parameter. As a result, the position 30 of this lower tip of this V formation in the X-Y plane and/or functionally equivalent information is calculated and made available for use by a higher-level system. The Nelder-Mead algorithm is a heuristic optimization method based on an iterative process of adjusting the measurement parameters to determine the position of this lower tip of this V formation in the X-Y plane and/or the functionally equivalent information with as few iterations as possible . This enables efficient and accurate position detection.

The control device of the sensor system can also include a separate storage medium, wherein the storage medium stores the current values of the first measurement parameter, the second measurement parameter and the sensor element measured value. This performs the Nelder-Mead algorithm iteratively to determine the position 30 of this lower tip of this V formation in the X-Y plane and/or functionally equivalent information.

To check the convergence of the calculation of the position 30 of this lower tip of this V formation in the X-Y plane and/or the functionally equivalent information, the controller may perform a convergence criterion check and terminate the Nelder-Mead algorithm iterations accordingly. This ensures that position detection is reliable and precise.

In order to detect and correct errors in the measurements of the sensor element, the control device can use an error detection and correction method. This procedure makes it possible to identify and correct errors in the measurements of the sensor element.

The error detection and correction process may include various techniques depending on the specific requirements of the system. One option is to compare the collected data against predefined thresholds. If the readings are outside the expected limits, an error is detected. In such cases, the control device may take appropriate corrective measures to improve the accuracy of the position detection.

Another option is to apply statistical methods for error detection and correction. The measured values are analyzed to identify deviations and anomalies. Based on these findings, the control device can carry out error corrections, for example by adjusting the data filtering or recalculating the measured values.

In addition, the control device can also rely on redundancy by using multiple sensor elements. By comparing the measured values of the different sensor elements, the device can detect and correct errors, for example by eliminating outlier values or using the average of the measurements.

Overall, the error detection and correction function is used to ensure the reliability and accuracy of position detection. By detecting and correcting potential errors, the controller can enable precise determination of the position of the lower tip of the V formation in the XY plane or functionally equivalent information.

Particle Swarm Optimization (PSO)

In a further embodiment of the sensor system, the computer-implemented particle swarm optimization (PSO) method is used to determine the next measurement point from the next first measurement parameter and the next second measurement parameter. The control device simulates a group of particles in the multi-dimensional search space, with each particle representing a set of measurement parameters. The particles search for the optimum of the V formation, maximizing the position 30 of the lower tip of the V formation in the XY plane and/or functionally equivalent information from the first measurement parameter as the X coordinate and the second measurement parameter as the Y coordinate becomes.

The computer-implemented particle swarm optimization (PSO) method uses a particle position update function where the particles update their position based on their current positions, their individual best positions, and the best positions of other particles. This leads to a convergence to the optimum of the V formation and enables precise position determination.

To prevent convergence or exit from the search space too quickly and to ensure a comprehensive exploration of the search space, the computer-implemented method of PSO applies various velocity and motion constraints to the particles.

The PSO method uses a predefined termination criterion to terminate the search process. This can happen when a certain number of iterations has been reached or a predefined accuracy of determining the position 30 of the lower tip of the V formation in the XY plane and/or the functionally equivalent information has been achieved. This ensures efficient and accurate V-formation detection.

To enable efficient and accurate V-formation detection, the computer-implemented method of PSO uses adaptive parameter adjustment. The control device adjusts the parameters of the PSO method based on the progress of the search process and the quality of the determined position 30 of the lower tip of the V-formation in the X-Y plane and/or the determined functionally equivalent information.

The PSO method contains a stochastic component that introduces random fluctuations in the particle positions. This enables broader exploration of the search space and reduces the risk of local optima.

To achieve faster convergence and better position detection, the controller adjusts the step size of the particles based on the convergence speed and the progress of the search process. This enables an effective and efficient search in the search space.

To achieve higher accuracy of position determination, the particles perform a tight spiral movement near promising positions 30 of the lower tip of the V-formation in the middle of the V-formation. This spiral allows the particles to adjust their positions more finely, providing more accurate detection of the target position. Meanwhile, the outer particles keep their positions stable to maintain the shape of the V formation and ensure the stability of the swarm.

This combination of tight spiral movement and maintaining the V formation allows the particles to continually improve their positions and increase targeting accuracy. In addition, the close cooperation within the swarm enables effective information transfer between the particles, resulting in optimized position determination.

The behavior of the particles in the V formation is an example of cooperative behavior that is often observed in swarm intelligence. Through collaboration and communication within of the swarm, complex tasks can be solved more efficiently and precisely. This principle is applied in various fields such as robotics, optimization algorithms and artificial intelligence to solve diverse problems and find innovative solutions.

Genetic algorithms

• Das Sensorsystem umfasst ein Sensorelement, das Messwerte abhängig von einem ersten und einem zweiten Messparameter erfasst. Ein Paar aus erstem und zweitem Messparameter bildet jeweils einen Messpunkt. Um die Messparameter innerhalb vordefinierter Messparmeterintervalle einzustellen, wird eine Steuervorrichtung verwendet.

In one embodiment of the proposed sensor system for determining the position 30 of the tip of a V-formation in an XY plane or functionally equivalent information, the following components are used:

• The sensor system includes a sensor element that records measured values depending on a first and a second measurement parameter. A pair of first and second measurement parameters each forms a measuring point. A control device is used to set the measurement parameters within predefined measurement parameter intervals.

A computer-implemented method, preferably using computer-implemented genetic algorithms, is used to determine the next measurement point based on the next first and second measurement parameters. This method enables efficient position determination of the tip of the V formation or functionally equivalent information.

An output unit preferably serves to provide the position 30 of the tip of the V formation in the X-Y plane or functionally equivalent information. The first measurement parameter is preferably used as the X coordinate and the second measurement parameter as the Y coordinate. This information can be used by a higher-level system.

The computer-implemented method preferably uses a storage medium (RAM, NVM) to store the data, parameters and intermediate results of the genetic algorithm. By applying the genetic algorithm, the position of the tip of the V formation or the functionally equivalent information is determined with as few iterations as possible. The measurement parameters are optimized by the genetic algorithm to ensure efficient position determination.

The sensor system preferably has a data interface for communication of the control device (CTR) with the higher-level system in order to provide the position 30 of the tip of the V-formation in the XY plane or the functionally equivalent information.

The sensor element of the sensor system is preferably a novel and inventive element that determines and delivers the measured value depending on the measurement parameters with a good Cpk value in series production. This enables precise positioning of the tip of the V formation in the X-Y plane or the functionally equivalent information.

The computer-implemented method of genetic algorithms preferably uses a multi-point search, in which several measuring points are explored in the search space at the same time. This increases the efficiency of the method for determining the position of the V formation.

The sensor system preferably has an error detection function and error correction function, which makes it possible to identify and eliminate measurement errors, outliers or disruptions in the measurement process. This ensures precise positioning.

In addition, the sensor system offers a data backup function to back up, archive or restore the stored data in the long term and thus ensure the integrity of the measurement data.

• Zusätzliche Sensoren: Je nach Anwendungsbereich können weitere Sensoren hinzugefügt werden, um zusätzliche Daten zu erfassen. Beispielsweise könnten Temperatursensoren, Feuchtigkeitssensoren oder Luftqualitätssensoren integriert werden, um umfassendere Umweltinformationen zu liefern.
• Kommunikationsmodule: Um die Konnektivität des Sensorsystems zu verbessern, können Kommunikationsmodule wie WLAN, Bluetooth oder Mobilfunktechnologien integriert werden. Dadurch können die gesammelten Daten drahtlos an andere Geräte oder Cloud-Dienste übertragen werden.
• Datenanalyse und -verarbeitung: Durch die Integration von leistungsstarker Software kann das Sensorsystem Daten in Echtzeit mittels computerimplementierter Verfahren analysieren und verarbeiten. Dies ermöglicht eine sofortige Reaktion auf bestimmte Ereignisse oder die Durchführung komplexer computerimplementierter Algorithmen zur Extraktion wertvoller Informationen.
• Energieeffizienz: Um die Batterielebensdauer einer batteriegestützten Energieversorgung des Sensorsystems zu verlängern, kann das Sensorsystem mit energieeffizienten Komponenten ausgestattet werden. Dies umfasst beispielsweise den Einsatz von Low-Power-Mikrocontrollern, intelligentem Energiemanagement und Energierückgewinnungstechnologien.
• Benutzerschnittstellen: Um die Bedienung und Interaktion mit dem Sensorsystem zu verbessern, können zusätzliche Benutzerschnittstellen implementiert werden. Dies könnte die Integration von Touchscreens, Sprachsteuerung oder Fernbedienungen umfassen, um eine intuitive Steuerung zu ermöglichen.

The sensor system is preferably expandable and can preferably be supplemented with additional components or functions in order to meet the requirements and needs of the users. Possible extensions include:

• Additional sensors: Depending on the application, additional sensors can be added to collect additional data. For example, temperature sensors, humidity sensors or air quality sensors could be integrated to provide more comprehensive environmental information.
• Communication modules: To improve the connectivity of the sensor system, communication modules such as WLAN, Bluetooth or cellular technologies can be integrated. This allows the collected data to be transmitted wirelessly to other devices or cloud services.
• Data analysis and processing: By integrating powerful software, the sensor system can analyze and process data in real time using computer-implemented methods. This allows for immediate response to specific events or the execution of complex computer-implemented algorithms to extract valuable information.
• Energy efficiency: In order to extend the battery life of a battery-supported energy supply for the sensor system, the sensor system can be equipped with energy-efficient components. This includes, for example, the use of low-power microcontrollers, intelligent energy management and energy recovery technologies.
• User interfaces: To improve operation and interaction with the sensor system, additional user interfaces can be implemented. This could include integrating touchscreens, voice controls or remote controls to provide intuitive control.

These expansion options make the sensor system flexible and adaptable for various application scenarios. Users can expand the system's capabilities to meet their specific needs and benefit from the sensor system's versatile capabilities.

Bayesian optimization

In a variant of the proposed sensor system, the position 30 of the lower tip of a V formation is determined in an XY plane or functionally equivalent information. The sensor system includes a control device for setting a first measurement parameter within a first measurement parameter interval and a second measurement parameter within a second measurement parameter interval. A pair of a first measurement parameter and a second measurement parameter forms a measurement point. A sensor element records a sensor element measurement value depending on the set measuring points. The sensor element measurement value is preferably entered into a virtual, three-dimensional Cartesian coordinate system. The x coordinate is determined by the first measurement parameter, the y coordinate by the second measurement parameter and the z coordinate by the sensor element measurement value.

For example, to determine the position 30 of the lower tip of the V formation or functionally equivalent information, the sensor system uses a Bayesian optimization function. This function implements a computer-implemented method to determine the next measurement point from a next first measurement parameter and a next second measurement parameter. A position detection unit (pattern recognition device MEV, control device CTR) then determines the position 30 of the lower tip of the V-formation or functionally equivalent information from the specific measuring point. Additionally, a storage medium function (RAM, NVM) provides the position 30 of the lower tip of the V formation or functionally equivalent information for use by a higher-level system.

The Bayesian optimization function of the sensor system minimizes the number of iterations required to determine the position 30 of the lower tip of the V formation in the X-Y plane or the functionally equivalent information. This increases the efficiency of the process and enables faster position detection.

The sensor system can also be implemented as a computer program product function that provides a computer-readable program that implements the Bayesian optimization function to determine the next measurement point. This increases the flexibility of the system and enables easy updating or expansion of functions.

A wireless and/or wired communication interface function, for example by means of a data interface, enables the transmission of data or information between the sensor system and other devices or systems. This enables seamless integration of the sensor system into existing networks or systems.

The sensor system includes a processor unit (control device CTR) and a storage medium (RAM, NVM) to execute the computer-implemented method and store data to enable. This ensures efficient processing and storage of the recorded measurement data and results.

A typically computer-implemented error detection function and error correction function is preferably integrated into the sensor system to identify and eliminate measurement errors, outliers or disturbances in the measurement process. This improves the accuracy of position detection and achieves reliable results.

To secure and maintain data integrity over the long term, the sensor system preferably has a storage mechanism that logs the recorded measurement data and stores it securely in a memory (RAM, NVM). This ensures that the measurement results are protected from loss or damage even after they have been recorded.

In addition, the sensor system is preferably equipped with a calibration function, which is preferably carried out regularly in order to maintain the measurement accuracy. Internal reference values are used to detect and correct any deviations or drifts. This regular calibration ensures high precision and reliability of position detection.

Another feature of the sensor system is preferably the integration of a real-time monitoring function. This enables continuous monitoring of the sensor data during the measurement process. Deviations or anomalies are immediately detected and can be quickly resolved to ensure uninterrupted and reliable capture of position information.

In summary, the sensor system enables precise, reliable and safe position detection by integrating an error detection function and error correction function, a storage mechanism, a calibration function and a real-time monitoring function. These features help identify and eliminate measurement errors and improve the accuracy of position information, which in turn provides reliable results.

Miscellaneous

The above description is not intended to be complete and does not limit this disclosure to the examples shown. Other variations to the disclosed examples may be understood and accomplished by those of ordinary skill in the art from the drawings, disclosure and claims. The indefinite articles “a” or “an” and their inflections do not exclude a plurality, while the mention of a certain number of elements does not exclude the possibility that there are more or fewer elements. A single unit may perform the functions of multiple elements mentioned in the disclosure, and conversely, multiple elements may perform the functions of one unit. Numerous alternatives, equivalents, variations and combinations are possible without departing from the scope of the present disclosure.

Unless otherwise stated, all features of the present invention can be freely combined with one another. This applies to the entire document presented here. Unless otherwise stated, the features described in the description of the figures can also be freely combined with the other features as features of the invention. A limitation of individual features of the exemplary embodiments to the combination with other features of the exemplary embodiments is expressly not intended. In addition, objective features of the device can also be used reformulated as process features and process features can be reformulated as objective features of the device. Such a reformulation is therefore automatically disclosed.

In the foregoing detailed description, reference is made to the accompanying drawings. The examples in the specification and drawings should be considered as illustrative and are not to be viewed as limiting the specific example or element described. Several examples can be derived from the preceding description and/or the drawings and/or the claims by modifying, combining or varying certain elements. In addition, examples or elements not described literally may be derived from the description and/or drawings by a person skilled in the art.

List of characters

• 1 shows by way of example and schematically simplified an exemplary, proposed system of an application device corresponding to the second application example of a motor.
• 2 shows an optical fiber LWL with a sensor element SE directly on the center MP of the core of the optical fiber LWL.
• 3 shows a motor of an application device corresponding to the second application example of a motor like him 1 schematically simplified, in which in addition to the optical fiber LWL with the sensor element SE, which extends into the motor via the said opening OF and which is covered with the mechanical shell MH, the suspension of the motor has a position sensor POS with an LED and a photodiode, which generates the position signal POSS using a marking MRK on the rotor housing GHR.
• 4 shows the filter output signal S4 generated by the lock-in amplifier LIV as a flux density measurement signal and the position signal POSS of the position detector POS 3 .
• 5 shows a cross section through the exemplary first end ELWL1 of a proposed optical waveguide LWL.
• 6 shows by way of example and schematically simplified an exemplary, proposed material measuring system with a proposed sensor head SK.
• 7 shows a sensor head SK with the mechanical sheath of the optical fiber LWL, which is covered by the mechanical sheath MH.
• 8th shows the sensor head SK 7 in supervision ( 8a) and in side view ( 8b) as a sectional image.
• 9 shows the steps of the method for producing a sensor head SK according to the proposal and its use.
• 10 shows a top view of an exemplary workpiece made of a ferromagnetic material FM.
• 11 branches an exemplary value curve of the measurement signal S4 obtained depending on the position x of the sensor head SK on the surface OF of the workpiece 11a shown.
• 12 shows the device with the cover attached for the light-tight closure of the housing 8.
• 13 equals to 11 , with the exemplary device now shown from a different angle.
• 14 shows the device in cross section.
• 15 shows an exemplary, not to scale, cross section through the sensor layer 5.
• 16 shows a typical usage situation, wherein the magnetic field camera head 21 is preferably placed on the surface 34 of the respective measurement object with the underside 24 of the housing 8.
• 17 shows the system of 14 simplified with the control and evaluation devices as a block diagram.
• 18 shows a drawing based on an exemplary photo of an exemplary sensor head 21 with the cover removed, which was created during the development of the proposal presented here.
• 19a shows a drawing based on an exemplary photo of an exemplary sensor head 21 with the cover removed, which was created during the development of the proposal presented here.
• 19b essentially corresponds to that 19a and shows the same magnetic field camera head 21 from a slightly different perspective.
• 20 shows a drawing of the prototype with the lid attached. The interior of the housing 8 of the magnetic field camera head 21 is then closed in a light-tight manner.
• 22 Above shows the pattern-coded magnetic flux density image 39 of the distribution of the magnetic flux density of four permanent magnets 37 on a glass plate 38 in arbitrary units.
• 23 shows a representation for four magnetized rings.

Description of the characters

The figures explain the proposal schematically and simplified. The disclosure of the document presented here is not limited to the figures and also includes other combinations.

Figure 1

1 shows an example and simplified schematic of an exemplary, proposed system. The motor includes the stator housing GH. The magnetic stator circuit is attached to the stator housing GH. The magnetic stator circuit can, for example, comprise a ferrite body. The motor also includes the stator coil windings SL. The motor also includes the axis AX, which the stator preferably rotatably supports. The axis AX is preferably mounted in the stator so that it can rotate about the longitudinal axis of the axis. The axis AX is preferably secured against displacements along the longitudinal axis of the axis AX. A rotor housing GHR is preferably attached to the axis AX. A magnetic rotor circuit RMK is preferably attached to the rotor housing and/or the axis AX. The magnetic rotor circuit RMK preferably comprises a ferromagnetic laminated core or the like. Typically, several permanent magnets PM are attached to the magnetic rotor circuit RMK and/or to the rotor housing GHR. There is typically an air gap LS between the stator coils SL and the permanent magnets PM.

A half-bridge control CTRH controls several half-bridges HB using half-bridge control lines HSL. The half bridges supply current to the motor phases that are connected to the stator coils SL. In the example of the 1 the exemplary motor is three-phase. The exemplary motor then preferably comprises N*3 stator coils. Here N is an integer positive number greater than 0. The half bridges commute the control of the stator coils depending on the half bridge control lines HSL using the motor phases MPH.

The generator G generates the transmit preliminary signal S5w. The transmit preliminary signal S5w is preferably pulse-modulated with a pulse frequency. Particularly preferably it is a square wave signal with a duty cycle of preferably 50%. Other duty cycles are conceivable. The offset addition OFF1 preferably adds an offset to the value of the transmit preliminary signal in order to be able to use the pump radiation source PL. The resulting transmission signal S5 preferably has no negative signal components. The pump radiation source PL generates a modulated pump radiation LB depending on the transmission signal S5. In the example of the 1 the pump radiation source transmits the pump radiation LB through a dichroic mirror F1 and radiates pump radiation LB into the optical waveguide LWL. The motor housing GH has at least one opening OF through which the optical waveguide LWL enters the housing GH. The sensor element SE is preferably located at the end of the optical waveguide LWL. The sensor element SE preferably comprises a plurality of nanodiamonds or diamonds DM and/or a plurality of crystals, which preferably have a statistically uniformly distributed different crystal orientation and which are embedded in a matrix material. Typically, the matrix material made of a carrier material TM mechanically connects these nano-diamonds ND to the first end ELWL1 of the optical waveguide LWL. The actual optical waveguide LWL preferably has an optical waveguide diameter D _LWL of approximately 100µm. Smaller optical fiber diameters D _LWL are preferred. However, larger fiber optic cable diameters D _LWL are possible. In addition, the fiber optic cable is typically protected against kinks. The kink protection is preferably designed as a mechanical cover MH. The pump radiation LB from the pump radiation source PL impinges on the nanodiamonds or diamonds DM and/or crystals in the sensor element SE at the first end of the optical waveguide ELWL1. The nanodiamonds or diamonds DM and/or crystals in the sensor element SE preferably include NV centers and/or paramagnetic centers. The sensor element SE preferably comprises diamonds with NV centers. Typically, the pump radiation LB stimulates the nanodiamonds or diamonds DM and/or crystals to emit fluorescent radiation FL with a fluorescence wavelength λ _fl . The sensor element SE is preferably located at the first end ELWL1 of the optical waveguide LWL. The sensor element preferably has a diameter that is smaller than the diameter D _LWL of the optical waveguide LWL. Typically, the NV centers NVZ of the sensor element SE radiate the fluorescence radiation FL back into the optical fiber LWL via the first end ELWL1 of the optical fiber LWL. The fluorescent radiation FL emerges from the optical waveguide LWL again at the other, second end ELWL2 of the optical waveguide LWL and, for example, deflected by the dichroic mirror F1, preferably irradiates the photodetector PD. The dichroic mirror F1 directs the scattered pump radiation LB in the example of 1 not in the direction of the photodetector PD. As a result, the photodetector PD essentially only receives fluorescent radiation FL. Essentially this means that the pump radiation LB and the other radiation that still hits the photodetector PD are essentially insignificant for the technical purpose of the device. To achieve this, the document presented here suggests the use of a lichtdi th housing for the light-sensitive device parts and the use of apertures in order to avoid the entry of unwanted radiation and undesirable effects due to scattered radiation. The photodetector PD preferably converts the intensity of the fluorescence radiation FL into a time curve of a received signal S0. An exemplary amplifier V1 amplifies and optionally filters the receiver output signal S0 in the example of 1 to the amplified receiver output signal S1. In the example of the 1 An exemplary multiplier M1 multiplies the amplified receiver output signal S1 with the transmit preliminary signal S5w to form the filter input signal S3. A low-pass filter TP typically removes the frequency components with the added frequencies of the transmit preliminary signal S5w and the amplified receiver output signal S1 from the spectrum. The low-pass filter TP thus filters the receiver input signal to the filter output signal S4. The half-bridge control CTRH controls the commutation of the motor using the half-bridge HB depending on the filter output signal S4. The combination of the first multiplier M1 and the low-pass filter TP forms a dot product between the signal vector of the amplified receiver output signal S1 and the transmit preliminary signal S5w. It is a simple exemplary synchronous demodulator. The synchronous demodulator generates a signal S4 that symbolizes the correlation between the amplified receiver output signal S1 and the transmit preliminary signal S5w. This signal S4 is the filter output signal S4. The use of other correlators instead of a synchronous demodulator, for example the use of optimal filters, Kalmann filters and/or matched filters and/or other estimation devices to determine the proportion of the transmission signal S5 in the receiver output signal S0 is conceivable. What's special about the measuring method 1 is that the optical waveguide LWL together with the sensor element SE and the other device parts typically does not include any ferromagnetic and / or electrically conductive materials and therefore essentially does not influence the magnetic field of the motor.

For example, the half-bridge control CTRH can detect a zero crossing of the magnetic flux density in the air gap LS or the magnetic flux density of the stray field of the air gap.

The intensity of the fluorescence radiation FL of the diamonds DM or nanodiamonds and/or the crystals of the sensor element SE depends on the magnetic flux density B at the location of the NV centers NVZ of the sensor element SE. Since the value of the filter output signal S4 indicates how much of the transmit preliminary signal S5w is contained in the amplified receiver output signal S1, this filter output signal S4 is a measure of the intensity of the fluorescent radiation FL. The filter output signal S4 is therefore a measure of the magnetic flux density B at the location of the NV centers NVZ in the sensor element SE.

The half-bridge control CTRH evaluates the zero crossing of the alternating signal component of the filter output signal S4 and, depending on this, preferably controls the commutation of the motor by means of the half-bridges HB.

In the example of the 1 The sensor element SE is placed in the stray field BSTR of the air gap LS of the motor. A position sensor POS supplies a position signal using an MRK marking on the motor rotor. In the following example the 4 it becomes clear that the signal is a binary signal with an exemplary 1 bit resolution. The magnetic stator circuit SMK is attached to the housing GH. A mechanical sheath MH made of ceramic protects the common optical fiber LWL. A filling compound FM seals the opening OF in the engine.

An external data bus EXTDB enables the CTRH half-bridge controller to communicate with a higher-level control system. The external data bus can be a wired or wireless data connection. Several parallel data connections, which can be implemented differently, are conceivable.

Figure 2

The 2 shows an optical fiber LWL with a sensor element SE directly on the center MP of the core of the optical fiber LWL. On part of the end surface EF of the optical fiber LWL, the sensor element SE is designed as an optical fiber lens LWLL.

Figure 3

The 3 shows an engine like him 1 schematically simplified sketch. In addition to the optical fiber LWL with the sensor element SE, which extends into the motor via the said opening OF and which is covered with the mechanical sheath MH, the motor suspension has a position sensor POS with an LED and a photodiode, which generates the position signal POSS using a marking MRK on the rotor housing GHR. The motor phase lines drive and control the motor.

The rotor is rotatably mounted in the stator using the axis AX. The motor phases MPH supply current to the stator coils SL. The housing fixes the components of the stator, such as the stator coils SL, the axis and AX (without affecting the rotation of the axis) and the optical fiber LWL with the mechanical sheath MH.

Figure 4

4 shows the filter output signal S4 generated by the lock-in amplifier LIV and the position signal POSS of the position detector POS 3 . The motor rotates with the motor rotation period EU. It is a three-phase motor with four coils per motor phase.

The special thing is that the measurement of the magnetic field B in the scattering area BSTR of the motor air gap LS is carried out purely optically. The frequencies of the measurement signals for measuring the position of this magnetic field B in the air gap LS of the motor are all and exclusively in the example of 3 and 4 in the optical range, i.e. between 3*10 ¹⁴ Hz and 10 ¹⁴ Hz. This means that crosstalk between electrical device parts of the motor and the measuring device is very low if the control and evaluation elements of the device are far enough away from the motor. The energy intensity of the electromagnetic radiation that the optical waveguide transports into the motor and that the measuring device uses in the motor is preferably in the frequency range from 1Hz to 10 ¹⁰ Hz compared to the energy intensity in the frequency range between 3 * 10 ¹⁴ Hz and 10 ¹⁴ Hz by -40dB , better by -60dB, better by -90dB, better by -120dB, better by -200dB lower. The device therefore works without microwaves.

This is a significant advantage over measurements with Hall probes or the like or measurements with NV centers using microwaves.

Figure 5

5 shows a cross section through the exemplary first end ELWL1 of a proposed optical waveguide LWL. The optical fiber LWL has an optical fiber core LWLC. The optical fiber LWL can be a monomode optical fiber or a multimode optical fiber. The optical waveguide LWL can be a gradient optical waveguide or a step index waveguide or the like, in which the optical waveguide core LWLC flows smoothly into the outer area of the optical waveguide LWL with regard to the refractive index. The mechanical sheath MH protects the optical fiber LWL and preferably leaves the first end ELWL1 of the optical fiber LWL free. The carrier material TM of the sensor element SE surrounds the first end ELWL1 of the optical waveguide LWL. The carrier material TM of the optical waveguide LWL is preferably transparent for the pump radiation wavelength λ _pmp and the fluorescence wavelength λ _fl . The transparency refers to the dimensions of the optical fiber LWL, which can have a diameter D _LWL that is certainly smaller than 100µm. The end surface EF of the optical waveguide LWL is preferably perpendicular to the optical axis of the optical waveguide LWL, which is shown here as an example as the center line ML. At the penetration point of the optical axis, i.e. the center line ML, through the end surface EF, an optical waveguide lens LWLL is manufactured in the carrier material TM as a thickening of the carrier material TM. The thickness d _l of the carrier material TM is typically thickest there. In the remaining areas of the sensor element SE, the optical waveguide LWL is possibly only thinly coated with the carrier material TM with a smaller thickness d _r . The thickness d _r can also be 0m. The diameter D _LWLL of the optical fiber lens LWLL is typically smaller than the diameter D _LWL of the optical fiber LWL. For clarity, the first end ELWL1 of the optical fiber LWL with the end surface EF and the optical fiber lens LWLL is enlarged again on the left. The small, stochastically uniformly distributed diamonds or nanodiamonds DM and/or crystals in the material of the carrier material TM are indicated for clarity. The diamonds are preferably DM nanodiamonds with a size of less than 500µm, better less than 200µm, better less than 100µm, better less than 50µm, better less than 20µm, better less than 10µm, better less than 5µm, better less than 2µm, better less than 1µm, better less than 0.5µm, better, smaller than 0.2µm, better, smaller than 0.1µm, better, smaller than 50nm, better, smaller than 20nm, better, smaller than 10nm. The crystals preferably have a size of less than 500 μm, better less than 200 μm, better less than 100 μm, better less than 50 μm, better less than 20 μm, better less than 10 μm, better less than 5 μm, better less than 2 μm, better less than 1 μm, better less than 0.5 μm, better less than 0 .2µm, better, smaller than 0.1µm, better, smaller than 50nm, better, smaller than 20nm, better, smaller than 10nm. Sizes over 100 nm are particularly preferred, since sizes smaller than 100 nm cause special surface effects between the NV center NVZ or paramagnetic centers and the diamond surface of the the diamond in question can cause DM. Crystal sizes over 100 nm are particularly preferred, since sizes smaller than 100 nm can cause special surface effects between paramagnetic centers and the crystal surface of the crystal in question. Preferably, a large number of these diamonds or nanodiamonds DM and/or crystals comprise one or more NV centers NVZ and/or one or more paramagnetic centers, which then generate the fluorescent radiation FL when irradiated with suitable pump radiation LB.

Figure 6

6 shows by way of example and schematically simplified an exemplary, proposed material measuring system with a proposed sensor head SK. The sensor head SK includes the sensor head housing GH. The sensor head housing GH preferably includes a permanent magnet PM. The permanent magnet PM is preferably tubular. The permanent magnet PM preferably has a permanent magnet symmetry axis AX. The permanent magnet PM is preferably magnetized parallel to the permanent magnet symmetry axis AX. The preferably tubular permanent magnet PM typically has a first end and a second end. The second end of the permanent magnet PM has a permanent magnet distance d _pm from the support surface AF of the sensor head SK. Since the diameter of the optical fiber LWL is less than 1mm, the permanent magnet distance d _pm is smaller than 1mm, better smaller than 0.5mm, better smaller than 200µm, better smaller than 100µm, better smaller than 20µm. The permanent magnet distance d _pm is preferably slightly larger in the area of the sensor element SE than the diameter of the optical fiber LWL. The permanent magnet distance d _pm in the area of the sensor element SE is preferably less than 200% larger than the diameter of the optical fiber LWL, preferably less than 100% larger than the diameter of the optical fiber LWL, , better less than 50% larger than the diameter of the optical fiber LWL, , better less than 25% larger than the diameter of the optical fiber LWL, , better less than 10% larger than the diameter of the optical fiber LWL, , better less than 5% larger than the diameter of the optical fiber LWL. The material of the housing GH of the sensor head SK is preferably non-magnetic and/or non-magnetizable. For the purposes of the document presented here, a material is considered non-magnetic if the magnetic permeability µ _T of this material is µ _T <1. The document presented here recommends the use of materials with the lowest possible magnetic permeability µ _T as the material of the sensor head housing GH. The sensor element SE is preferably located on the extended axis of symmetry, the permanent magnet symmetry axis AX of the permanent magnet PM.

For the measurement, the operator or a mechanical actuator brings the sensor head SK with the support surface AF into contact with the surface OF of the workpiece to be measured. The surface OF of the workpiece to be measured preferably comprises a ferromagnetic material FMM (17).

If the workpiece to be measured now has a disturbance on its surface OF, which influences the magnetic flux density B, the magnetic flux density B, which flows through the sensor element SE, changes when this disturbance comes into the vicinity of the permanent magnet symmetry axis AX of the permanent magnet PM and thus in the proximity of the sensor element SE comes. Such a fault can be, for example, a crack Ri or a hole or a depression or another defect in the material of the workpiece near the surface OF of the workpiece.

The generator G generates the transmit preliminary signal S5w. The transmit preliminary signal S5w is preferably pulse-modulated with a pulse frequency. Particularly preferably it is a square wave signal with a duty cycle of preferably 50%. Other duty cycles are conceivable. The offset addition OFF1 preferably adds an offset to the value of the transmit preliminary signal in order to be able to use the pump radiation source PL. The resulting transmission signal S5 preferably has no negative signal components. The pump radiation source PL generates a modulated pump radiation LB depending on the transmission signal S5. In the example of the 1 the pump radiation source transmits the pump radiation LB through a dichroic mirror F1 and radiates pump radiation LB into the optical waveguide LWL. The sensor head housing GH has at least one channel KN through which the optical waveguide LWL is inserted into the sensor head housing GH. The sensor element SE is preferably located at the end of the optical waveguide LWL. The sensor element SE preferably comprises a large number of nanodiamonds or diamonds DM, which preferably have a statistically uniformly distributed different crystal orientation and which are embedded in a matrix material. Typically, the matrix material made of a carrier material TM mechanically connects these nano-diamonds ND to the first end ELWL1 of the optical waveguide LWL. The actual optical waveguide LWL preferably has an optical waveguide diameter D _LWL of approximately 100µm. Smaller optical fiber diameters D _LWL are preferred. However, larger fiber optic cable diameters D _LWL are possible. In addition, typi Generally there is a kink protection for the fiber optic cable. The kink protection is preferably designed as a mechanical cover MH. The pump radiation LB from the pump radiation source PL strikes the nanodiamonds or diamonds DM in the sensor element SE at the first end of the optical waveguide ELWL1. The sensor element SE preferably comprises diamonds with NV centers. Typically, the pump radiation LB stimulates the nanodiamonds or diamonds DM to emit fluorescent radiation FL with a fluorescence wavelength λ _fl . The sensor element SE is preferably located at the first end ELWL1 of the optical waveguide LWL. The sensor element preferably has a diameter that is smaller than the diameter D _LWL of the optical waveguide LWL. Typically, the NV centers NVZ of the sensor element SE radiate the fluorescence radiation FL back into the optical fiber LWL via the first end ELWL1 of the optical fiber LWL. The fluorescent radiation FL emerges from the optical waveguide LWL again at the other, second end ELWL2 of the optical waveguide LWL and, for example, deflected by the dichroic mirror F1, preferably irradiates the photodetector PD. The dichroic mirror F1 directs the scattered pump radiation LB in the example of 1 not in the direction of the photodetector PD. As a result, the photodetector PD essentially only receives fluorescent radiation FL. Essentially this means that the pump radiation LB and the other radiation that still hits the photodetector PD are essentially insignificant for the technical purpose of the device. To achieve this, the document presented here proposes the use of a light-tight housing for the light-sensitive device parts and the use of shutters to avoid the entry of unwanted radiation and undesirable effects due to scattered radiation. The photodetector PD preferably converts the intensity of the fluorescence radiation FL into a time curve of a received signal S0. An exemplary amplifier V1 amplifies and optionally filters the receiver output signal S0 in the example of 1 to the amplified receiver output signal S1. In the example of the 1 An exemplary multiplier M1 multiplies the amplified receiver output signal S1 with the transmit preliminary signal S5w to form the filter input signal S3. A low-pass filter TP typically removes the frequency components with the added frequencies of the transmit preliminary signal S5w and the amplified receiver output signal S1 from the spectrum. The low-pass filter TP thus filters the receiver input signal to the filter output signal S4. The combination of the first multiplier M1 and the low-pass filter TP forms a dot product between the signal vector of the amplified receiver output signal S1 and the transmit preliminary signal S5w. It is a simple exemplary synchronous demodulator. The synchronous demodulator generates a signal S4 that symbolizes the correlation between the amplified receiver output signal S1 and the transmit preliminary signal S5w. This signal S4 is the filter output signal S4. The use of other correlators instead of a synchronous demodulator, for example the use of optimal filters, Kalmann filters and/or matched filters, is conceivable. What's special about the measuring method 1 is that the optical waveguide LWL together with the sensor element SE and the other device parts of the sensor head SK typically does not include any ferromagnetic and / or electrically conductive materials and therefore essentially does not influence the magnetic field of the workpiece, or the ferromagnetic material FM and the permanent magnet PM .

The intensity of the fluorescence radiation FL of the diamonds DM or nanodiamonds of the sensor element SE depends on the magnetic flux density B at the location of the NV centers NVZ of the sensor element SE. Since the value of the filter output signal S4 indicates how much of the transmit preliminary signal S5w is contained in the amplified receiver output signal S1, this filter output signal S4 is a measure of the intensity of the fluorescent radiation FL. The flux density measurement signal S4 is therefore a measure of the magnetic flux density B at the location of the NV centers NVZ in the sensor element SE.

In the example of the 1 The sensor element SE is placed in the stray field BSTR of the permanent magnet PM. The ferromagnetic material FM of the workpiece influences this stray field BSTR. If an operator or an actuator now pushes the workpiece and thus the ferromagnetic material FM along the surface OF of the workpiece on the support surface AF, the influence on the magnetic stray field BSTR only changes if this translational movement with the speed v the magnetic stray field BSTR influencing area of the ferromagnetic material influenced in its distribution of physical parameters. Such an influence can cause an uneven distribution of physical parameters in the ferromagnetic material FM, which influences the magnetic stray field BSTR. The feed speed v of the sensor head SK is preferably constant relative to the workpiece with the ferromagnetic material FM. An operator preferably manually feeds the sensor head SK relative to the workpiece at the feed speed v. The document presented here proposes to provide an actuator for production tests, which places the sensor head SK with the support surface AF on the surface OF of the workpiece or close to the surface OF of the workpiece and then parallel to the surface OF of the workpiece along a path to be examined to move line. A computer system preferably detects the position of the sensor head SK and thus the sensor element SE relative to the workpiece and thus the ferro using a coordinate sensor system magnetic material FM. The computer system preferably records the value of the filter output signal S4 together with the coordinates of the position of the sensor head SK and thus the position of the sensor element SE. The computer system preferably stores these pairs of coordinates of the measuring point and measured value of the filter output signal S4 in a memory of the computer system. The computer system can, for example, further process this data into a two- or three-dimensional model of the distribution of magnetizability. For example, the computer system can determine a two-dimensional distribution of the values of the filter output signal S4 on the surface OF of the workpiece and thus of the ferromagnetic material FM and display it on a screen or, for example, have it available as a JPEG image or a functionally equivalent form. The feed speed v can be 0m/s for a point measurement. The A mechanical sheath MH comprising ceramic or a fabric or a robust plastic protects the common optical fiber LWL. The optical fiber LWL can be fastened in the channel KN of the sensor head housing GH using a screw SCHR. An external data bus EXTDB enables the CTRH half-bridge controller to communicate with a higher-level control system. The external data bus can be a wired or wireless data connection. Several parallel data connections, which can be implemented differently, are conceivable.

Figure 7

7 shows a sensor head SK with the mechanical sheath of the optical fiber LWL, which is covered by the mechanical sheath MH. The drawing shows the permanent magnet PM. The support surface AF is at the bottom and covered.

Figure 8

8th shows the sensor head of the 7 in supervision ( 8a) and in side view ( 8b) as a sectional image.

The mechanical sheath MH of the optical fiber LWL is fixed to the optical fiber LWL in the channel KN of the sensor head housing GH of the sensor head SK using a screw SCHR. It is conceivable to fix the mechanical sheath MH of the optical fiber LWL with the optical fiber LWL in the channel KN of the sensor head housing GH of the sensor head SK by means of an adhesive. The permanent magnet PM is designed as a cylinder, for example. The lower end of the permanent magnet PM is at a distance d _pm from the support surface AF. The support surface AF is in the example 5 on the surface OF of the exemplary ferromagnetic material FM of the workpiece. For example, there should be a crack RI in the ferromagnetic material FM. This crack RI influences the stray field BSTR of the permanent magnet PM. The sensor element SE is located at the first end ELWL1 of the optical fiber LWL. The sensor element SE is preferably located near the extension of the axis AX of the cylindrical permanent magnet PM. The crack RI influences the stray field BSTR of the permanent magnet PM in the area of the sensor element SE. Therefore, the crack RI influences the intensity of the fluorescence radiation FL of the NV centers NVZ or paramagnetic centers in the sensor element SE.

The exemplary sensor head SK has the height d _SK1 . The exemplary sensor head SK has the length d _SK2 . The exemplary sensor head SK has the width d _SK3 .

On the top opposite to the support surface AF, the sensor head SK has a recess VT with the depth d _SK4 based on the top of the sensor head SK. If the sensor head SK is intended for manual positioning on the surface OF of the workpiece, the depression VT preferably has a depth d _SK4 between 3mm and 1.5cm, with 5mm to 8mm being preferred. This improves manageability.

In the example of the 5 the channel KN has a bend KI around an angle. Firstly, this has the positive effect of a certain mechanical clamping of the optical fiber LWL in the channel KN and secondly the effect that the optical fiber LWL can emerge from the sensor head SK parallel to the support surface AF. This has the advantage that, due to its flexibility, the optical fiber LWL comes to rest at a closer distance from the sensor head SK, for example on a worktop, than without this kink Kl. This reduces the torque that the optical fiber LWL exerts on the sensor head SK. Thirdly, the sensor element SE can thereby be positioned closer to the support surface AF of the sensor head SK. The optical waveguide LWL therefore preferably forms an angle α with the support surface AF in the immediate vicinity of the sensor element SE, which is different from 90° and 0°. More typical The angle α is between 15° and 65°, or better 25° and 55°. Angles α of 30° and 45° are currently in use.

In the 5 A ferromagnetic support ST is provided, which conducts the magnetic excitation H of the permanent magnet PM to the material of the workpiece, here the ferromagnetic material FM. In the example of the 5 the ferromagnetic support ST is an exemplary ferromagnetic tube. In the example, the ferromagnetic support ST has 5 For example, approximately the same diameter as the permanent magnet PM. In the example of the 5 the ferromagnetic support ST has an opening OE in the lower area. Through this opening OE, the optical waveguide LWL enters the interior of the ferromagnetic support ST. This opening OE is therefore part of the channel KN in the sensor head housing GH. The ferromagnetic support ST is filled with a filling material of a core KE of the support ST and the permanent magnet PM. The channel KN continues from the material of the remaining sensor head housing GH through the opening OE into this core KE. In the example of the 5 For example, the axis of rotational symmetry AX of the permanent magnet PM coincides with the axis of rotational symmetry of the ferromagnetic support ST. The channel KN in the core KE is therefore preferably designed in such a way that after the optical waveguide LWL has been inserted, the sensor element SE is located near the extension of this axis of symmetry AX.

The sensor head SK preferably comprises at least one means for generating a magnetic excitation, namely the permanent magnet PM, and a sensor element SE that is connected via at least one optical waveguide LWL. The fiber optic cable LWL is equipped with a control and evaluation device (see 1 ) to be connected or is connected to it. The sensor head further includes a sensor head housing GH made of a non-ferromagnetic material (µ _t <1). The sensor head SK preferably comprises further functional elements of one or more magnetic circuits. Such a further functional element of one or more magnetic circuits can be, for example, the ferromagnetic support ST. The sensor head SK is preferably designed so that the permanent magnet PM and the further functional elements of one or more magnetic circuits of the sensor head SK form at least one common magnetic circle via a support surface AF with a region of the surface OF of a workpiece when the sensor head SK with the support surface AF is placed on the surface OF of the workpiece.

Figure 9

• • Bereitstellen 140 eines Lichtwellenleiters LWL, wobei der Lichtwellenleiter LWL ein erstes Ende ELWL1 und ein zweites Ende ELWL2 aufweist;
• • Bereitstellen 145 eines flüssigen und mittels elektromagnetischer Strahlung einer Aushärtewellenlänge λ_H härtbaren Trägermaterials TM, wobei in das Trägermaterial (TM) eine Vielzahl von Diamanten DM bzw. Nanodiamanten eingebettet sind und wobei einer oder mehrere oder alle Diamanten DM bzw. Nanodiamanten dieser Diamanten DM NV-Zentren NVZ und/oder andere paramagnetischen Zentren aufweisen und wobei die NV-Zentren NVZ des Trägermaterials TM und/oder die anderen paramagnetischen Zentren des Trägermaterials TM bei Bestrahlung mit Pumpstrahlung LB zumindest eine Fluoreszenzstrahlung FL emittieren;
• • ggf. Vorhärten 147 (Pre-Bake) des Sensorelements SE durch eine vorausgehende Temperaturbehandlung.
• • Benetzen 150 des ersten Endes des Lichtwellenleiters TM auf eine Benetzungslänge L_B mit dem Trägermaterial TM, das die Vielzahl eingebetteter Diamanten DM bzw. Nanodiamanten und/oder Kristalle mit einem oder mehreren NV-Zentren und/oder einem oder mehreren paramagnetischen Zentren aufweist;
• • Einspeisen 155 elektromagnetischer Strahlung in das zweite Ende ELWL2 des Lichtwellenleiters LWL, wobei die Wellenlänge dieser elektromagnetischen Strahlung, die Aushärtewellenlänge λ_H so gewählt ist, dass das Trägermaterial TM am zweiten Ende ELWL2 des Lichtwellenleiters LWL aushärtet und sich in einen Festkörper wandelt, wobei das ausgehärtete Trägermaterial TM das Sensorelement SE ausbildet;
• • Entfernen 160 des nicht ausgehärteten Trägermaterials TM insbesondere mittels eines Lösungsmittels, wobei der verbleibende Film des Trägermaterials TM am ersten Ende des Lichtwellenleiters LWL das Sensorelement bildet;
• • ggf. Nachhärten 165 (Post-Bake) des Sensorelements SE durch eine nachfolgende Temperaturbehandlung.

9 shows the steps of the method for producing a sensor head SK according to the proposal and its use. The procedure includes the steps:

• • Providing 140 an optical fiber LWL, the optical fiber LWL having a first end ELWL1 and a second end ELWL2;
• • Providing 145 a liquid carrier material TM that can be hardened by means of electromagnetic radiation of a curing wavelength λ _H , a large number of diamonds DM or nanodiamonds being embedded in the carrier material (TM) and one or more or all diamonds DM or nanodiamonds of these diamonds being DM NV -Centers NVZ and/or other paramagnetic centers and wherein the NV centers NVZ of the carrier material TM and/or the other paramagnetic centers of the carrier material TM emit at least one fluorescent radiation FL upon irradiation with pump radiation LB;
• • If necessary, pre-hardening 147 (pre-bake) of the sensor element SE by prior temperature treatment.
• • Wetting 150 the first end of the optical waveguide TM to a wetting length L _B with the carrier material TM, which has the plurality of embedded diamonds DM or nanodiamonds and / or crystals with one or more NV centers and / or one or more paramagnetic centers;
• • Feeding 155 electromagnetic radiation into the second end ELWL2 of the optical waveguide LWL, the wavelength of this electromagnetic radiation, the curing wavelength λ _H , being selected so that the carrier material TM hardens at the second end ELWL2 of the optical waveguide LWL and turns into a solid, whereby the cured carrier material TM forms the sensor element SE;
• • Removing 160 the uncured carrier material TM, in particular by means of a solvent, the remaining film of the carrier material TM forming the sensor element at the first end of the optical waveguide LWL;
• • If necessary, post-hardening 165 (post-bake) of the sensor element SE through a subsequent temperature treatment.

• • Bereitstellen 167 eines Sensorkopfgehäuses GH des Sensorkopfes SK und einer Erregungsquelle für eine magnetische Erregung H, insbesondere eines Permanentmagneten PM;
• • Einbau 170 des Lichtwellenleiters LWL mit dem neu gebildeten Sensorelement SE in den Kanal KN des Sensorkopfgehäuses GH des Sensorkopfes SK und Einbau der einer Erregungsquelle für eine magnetische Erregung H in das Sensorkopfgehäuses GH des Sensorkopfes SK;
• • Verwendung 180 des Sensorkopfes SK zur ortsaufgelösten Vermessung der magnetischen Eigenschaften des Materials eines Werkstücks in der Nähe der Oberfläche OF des Werkstücks, wobei die Ortsauflösung besser als 500µm und/oder besser als 200µm und/oder besser als 100µm und/oder besser als 50µm und/oder besser als 20µm und/oder besser als 10µm ist. Dabei ist Auflösung die Möglichkeit zwei beieinanderliegende Störungen der magnetischen Eigenschaften einer Oberfläche OF eines Werkstücks noch durch ein Extremum von 5% der Signalamplitude zu können, wenn diese entsprechend der Auflösung voneinander beabstandet sind. Solche Störungen können beispielsweise Risse, Lunker, Materialinhomogenitäten etc. sein.

In the first application example of a sensor head SK, the following optional steps of a first exemplary application process can follow (variant I):

• • Providing 167 a sensor head housing GH of the sensor head SK and an excitation source for magnetic excitation H, in particular a permanent magnet PM;
• • Installation 170 of the optical fiber LWL with the newly formed sensor element SE in the channel KN of the sensor head housing GH of the sensor head SK and installation of an excitation source for magnetic excitation H in the sensor head housing GH of the sensor head SK;
• • Use 180 of the sensor head SK for the spatially resolved measurement of the magnetic properties of the material of a workpiece near the surface OF of the workpiece, the spatial resolution being better than 500µm and/or better than 200µm and/or better than 100µm and/or better than 50µm and /or better than 20µm and/or better than 10µm. Resolution is the possibility of detecting two adjacent disturbances in the magnetic properties of a surface OF a workpiece through an extremum of 5% of the signal amplitude if they are spaced apart according to the resolution. Such disturbances can be, for example, cracks, cavities, material inhomogeneities, etc.

• • Bereitstellen 182 eines Gehäuses GH des Motors;
• • Einbau 185 des Lichtwellenleiters LWL mit dem neu gebildeten Sensorelement SE in die Öffnung OF des Gehäuses GH des Motors;
• • Verwendung 187 des Lichtwellenleiters LWL mit dem neu gebildeten Sensorelement SE zur Vermessung der magnetischen Flussdichte B innerhalb des Luftspalts LS des Motors oder im Streufeld BSTR des Magnetfelds im Luftspalt LS.
• • ggf. Ermittlung 190 des Zeitpunkten des Nulldurchgangs des Betrags der magnetischen Flussdichte B der magnetischen Flussdichte B innerhalb des Luftspalts LS des Motors oder im Streufeld BSTR des Magnetfelds im Luftspalt LS und/oder ggf. Ermittlung 190 des Betrags der magnetischen Flussdichte B der magnetischen Flussdichte B innerhalb des Luftspalts LS des Motors oder im Streufeld BSTR des Magnetfelds im Luftspalt LS.
• • ggf. Ermittlung 193 oder Schätzung der Position des Magnetfelds innerhalb des Luftspalts des Motors.
• • ggf. Kommutierung 195 der Bestromung einer oder mehrerer Statorspulen des Motors und/oder einer oder mehrerer Rotorspulen des Motors in Abhängigkeit
  • ◯ von den ermittelten Zeitdurchgängen des Nulldurchgangs des Betrags der magnetischen Flussdichte B der magnetischen Flussdichte B innerhalb des Luftspalts LS des Motors oder im Streufeld BSTR des Magnetfelds im Luftspalt LS und/oder
  • ◯ von dem ermittelten Betrags der magnetischen Flussdichte B der magnetischen Flussdichte B innerhalb des Luftspalts LS des Motors oder im Streufeld BSTR des Magnetfelds im Luftspalt LS und/oder von der ermittelten oder geschätzten Position des Magnetfelds innerhalb des Luftspalts des Motors;

In the second application example of a motor, the following optional steps of a second exemplary application process can follow (variant II):

• • Providing 182 a housing GH of the motor;
• • Installation 185 of the optical fiber LWL with the newly formed sensor element SE in the opening OF of the housing GH of the motor;
• • Use 187 of the optical fiber LWL with the newly formed sensor element SE to measure the magnetic flux density B within the air gap LS of the motor or in the stray field BSTR of the magnetic field in the air gap LS.
• • if necessary, determination 190 of the time of the zero crossing of the amount of the magnetic flux density B of the magnetic flux density B within the air gap LS of the motor or in the stray field BSTR of the magnetic field in the air gap LS and/or if necessary, determination 190 of the amount of the magnetic flux density B of the magnetic flux density B within the air gap LS of the motor or in the stray field BSTR of the magnetic field in the air gap LS.
• • If necessary, determine 193 or estimate the position of the magnetic field within the air gap of the motor.
• • If necessary, commutation 195 of the current supply to one or more stator coils of the motor and/or one or more rotor coils of the motor depending on
  • ◯ from the determined time transitions of the zero crossing of the amount of the magnetic flux density B of the magnetic flux density B within the air gap LS of the motor or in the stray field BSTR of the magnetic field in the air gap LS and/or
  • ◯ from the determined amount of the magnetic flux density B of the magnetic flux density B within the air gap LS of the motor or in the stray field BSTR of the magnetic field in the air gap LS and/or from the determined or estimated position of the magnetic field within the air gap of the motor;

Figure 10

10a shows a top view of an exemplary workpiece made of a ferromagnetic material FM. Various holes L1 to L3 are made in the surface of the workpiece to simulate a crack RI. The first hole L1 should, for example, have an exemplary diameter of 4mm. The second hole L2 should, for example, have an exemplary diameter of 3mm. The third hole L3 should, for example, have an exemplary diameter of 2mm.

For the creation of the 10b was a sensor head SK, as in the 7 and 8th shown shifted over the surface OF of the workpiece along the path designated x, maintaining the contact between the support surface AF and the surface OF of the workpiece.

The value curve of the measurement signal S4 obtained in this way is in the 10b shown depending on the position x of the sensor head SK on the surface OF. Due to the small size D _LWL of the sensor element SE, the spatial resolution is significant, which is unknown from the prior art and thus enables the detection of manufacturing errors and workpiece irregularities with a completely new speed and precision.

Figure 11

11 shows a proposed application device in the form of a magnetic field camera in the form of the proposed magnetic field camera head 21 from a first view. A light source 2 (laser, LED) of the proposed magnetic field camera head 21 irradiates the sensor layer 5 of the proposed magnetic field camera head 21 with pump radiation 13 of a pump radiation wavelength λ _pmp . The sensor layer 5 preferably comprises crystals with paramagnetic centers. The crystals 66 of the sensor layer 5 preferably comprise diamonds. The crystals 66 of the sensor layer 5 preferably comprise nanocrystals 66. The paramagnetic centers in the sensor layer 5 are preferably NV centers in diamond crystals. The carrier material of the sensor layer 5 preferably comprises the crystals and/or nanocrystals 66. This sensor layer 5 is preferably applied to a flat surface inside the housing 8 of the proposed magnetic field camera head 21. The sensor layer 5 thus includes paramagnetic centers. Since the crystals 66 can be made very small as nanocrystals 66, the thickness 25 of the sensor layer 5 can be made very thin and the sensor layer 5 can be very densely filled with crystals 66 with paramagnetic centers. When irradiated with pump radiation 13 of the pump radiation wavelength λ _pmp , the paramagnetic centers of the sensor layer 5 emit fluorescence radiation 14 with a fluorescence wavelength λ _fl . An exemplary size of the sensor layer 5 can be, for example, 32mm x 22mm. Other dimensions are possible. When reworking, the people who carry out the rework should select the dimensions of the sensor layer 5 according to the specific intended application. A light sensor array 1 with nxm light sensors and with an evaluation electronics of the light sensor array 1 detects this fluorescence radiation 14. The successful testing of the device presented here with the magnetic field camera head 21 presented here included a light sensor array 1 with nxm light sensors with n = 900 and m = 600. Preferably includes Evaluation electronics 15 of the light sensor array 1, the control of the light sensor array 1 and the light sensors of the light sensor array 1, the energy supply for the light sensors of the light sensor array 1, the processing circuit 30 for the output signals 31 of the light sensors of the light sensor array 1, and an interface circuit 36 for passing on the values of the values the output signals 31 of the light sensors of the light sensor array 1, to a higher-level system, for example a computer system 28 for operating the magnetic field camera head 21 with a screen 32 via a data bus 29 or the like. The beam path of the pump radiation 13 and the fluorescent radiation 14 is preferably located within a housing 8. The document presented here names the surface of the sensor layer 5, which faces the light sensor array 1, hereinafter the top side of the 23 sensor layer 5. The document presented here names the surface opposite Surface of the sensor layer 5, which does not face the light sensor array 1, hereinafter underside 22 of the sensor layer 5.

The top 23 of the sensor layer 5 is preferably located inside the housing 8.

The underside 22 of the sensor layer 5 is preferably located outside the housing 8 on its surface. A light protector preferably covers the underside 22 of the sensor layer 5. This prevents light from penetrating the housing 8 and reaching the light sensor array 1. The sensor layer 5 is preferably transparent to electromagnetic radiation, in particular pump radiation 13, of the pump radiation wavelength λ _pmp . The sensor layer 5 is preferably transparent to electromagnetic radiation, in particular fluorescent radiation 14, of the fluorescent radiation wavelength λ _fl . For example, the light protection can be a varnish on the underside 22 of the sensor layer 5 or a particularly thin, opaque part of the housing wall of the housing 8. Such a thin housing wall of the housing 8 preferably does not influence the magnetic field, for example the magnetic flux density B, in the area of the sensor layer 5.

The light sensor array preferably comprises 1 n x m light sensors, which are preferably arranged in an area. Here n and m are positive integers.

For a better overview, the lid that covers the interior of the housing 8 is in the 11 not shown.

Figure 12

12 shows the device with the cover attached for the light-tight closure of the housing 8.

Figure 13

13 equals to 11 , with the exemplary device now shown from a different angle. In the camera's field of view are lines 1320, 1310, 1330 of an exemplary tri-plate line 1380 with a sensor element in clearances 2340 and 2350. The use of other wave lines (1380, 1880, 2380, 6880, 6980) is conceivable. The use of a continuous sensor layer 5 without waveguides (1380, 1880, 2380, 6880, 6980) is also conceivable, in which case the use of microwave and/or RF excitation of the NV centers and/or paramagnetic centers of the sensor layer 5 is not possible is. The waveline (1380, 1880, 2380, 6880, 6980) can preferably be connected, for example, via a plug connection, such as a coaxial socket or a triax socket 71.

Figure 14

14 shows the device in cross section. The light source 2 (laser, LED) emits the pump radiation 13 with pump radiation wavelength λ _pmp and possibly also electromagnetic radiation of other wavelength ranges 27. Optical functional elements of an illumination optics 3, such as one or more parabolic mirrors. direct as much pump radiation 13 as possible with the pump radiation wavelength λ _pmp towards the sensor layer 5. An optical shortpass filter 4 preferably transmits the pump radiation 13 with the pump radiation wavelength λ _pmp and preferably not the electromagnetic radiation of the said other wavelength ranges. As a result, the light source 2 essentially irradiates the sensor layer 5 exclusively with pump radiation 13 of a pump radiation wavelength λ _pmp . The sensor layer 5 preferably comprises crystals and/or nanocrystals 66 with paramagnetic centers. Optical functional elements and/or filter films etc. of the illumination optics 3 in the beam path between the light source 2 and the sensor layer 5 preferably homogenize the intensity distribution of the pump radiation 13 with pump radiation wavelength λ _pmp on the sensor layer 5. In a sensor layer 5 with a homogeneous distribution of the paramagnetic centers over the Surface of the sensor layer 5, this homogenizes the intensity of the fluorescence radiation 14 of the paramagnetic centers of the crystals and/or nanocrystals 66 of the sensor layer 5 in a homogeneous magnetic field B. The crystals and/or nanocrystals 66 of the sensor layer 5 preferably comprise diamonds. The crystals 66 of the sensor layer 5 preferably comprise nanocrystals 66. The paramagnetic centers are preferably NV centers in diamond crystals of the sensor layer 5. The carrier material of the sensor layer 5 preferably comprises these crystals and/or nanocrystals 66. This sensor layer 5 is preferably on applied to a flat surface 15. The sensor layer 5 thus includes these paramagnetic centers. Since the crystals 66 can be made very small as nanocrystals 66, the sensor layer 5 can be made very thin and filled very densely with crystals and/or nanocrystals 66. Since the preferably flat surface 16 is preferably designed as a very thin housing wall of the housing 8, the distance between the sensor layer 5 and the outer surface of the housing 8 in the area of the sensor layer 5 is very small. Preferably, the distance 26 between the sensor layer 5 and the outer surface of the housing 8 in the area of the sensor layer 5 is smaller than 1mm, better smaller than 500µm, better smaller than 200µm, better smaller than 100µm, better smaller than 50µm, better smaller than 20µm, better smaller than 10µm, better smaller than 5µm, better smaller than 2µm, better smaller than 1µm. Preferably, the thickness 25 of the sensor layer 5 is less than 1 mm, better less than 500 μm, better smaller than 200 μm, better smaller than 100 μm, better smaller than 50 μm, better smaller than 20 μm, better smaller than 10 μm, better smaller than 5 μm, better smaller than 2µm, better smaller than 1µm. Preferably, the ratio between the thickness 25 of the sensor layer 5 divided by the distance 26 between the sensor layer 5 and the outer surface of the housing 8 in the area of the sensor layer 5 is less than 1, better less than 0.5, better less than 0.2, better smaller than 0.1, better less than 0.05, better less than 0.02, better less than 0.01. The lower limit is preferably the ratio between the thickness 25 of the sensor layer 5 divided by the distance 26 between the sensor layer 5 and the outer surface of the housing 8 in the area of the sensor layer 5, which determine the requirements of the respective application. A low ratio ultimately results in degraded resolution, so a lower ratio does not always provide an advantage. Depending on the material of the housing wall of the housing in the area of the sensor layer 5 and depending on the requirements, this distance between the sensor layer 5 and the outer surface of the housing 8 can be in The area of the sensor layer 5 may be limited at the bottom by requirements of mechanical stability, service life, etc. Larger distances between sensor layer 5 and the outer surface of housing 8 in the area of sensor layer 5 reduce the resolution of the sensor measuring device. When irradiated with pump radiation 13 of the pump radiation wavelength λ _pmp by the light source 2, the paramagnetic centers of the sensor layer 5 emit fluorescence radiation 14 with a fluorescence wavelength λ _fl . The intensity of the fluorescence radiation 14 with a fluorescence wavelength λ _fl depends on the magnetic flux density B at the location of the respective paramagnetic center in the sensor layer 5. An imaging optics 7 detects the fluorescence radiation 14 with the fluorescence wavelength λ _fl and forms the intensity distribution of the emission intensity of the fluorescence radiation 14 with the fluorescence wavelength λ _fl on the n × m light sensors of the light sensor array 1, which are preferably arranged in one plane, as a fluorescence image of the emission intensity of the fluorescence radiation 14 with the Fluorescence wavelength λ _fl . The light sensor array 1 with the evaluation electronics 15 records this fluorescence image of the emission intensity of the fluorescence radiation 14 with the fluorescence wavelength λ _fl as an n × m matrix of measured values of the n × m light sensors of the light sensor array 1. The magnetic field camera head 21 used in testing the proposal achieved an effective resolution of 33µm × 3µm. The theoretically achievable resolution is typically in the range of the fluorescence radiation wavelength λ _fl of the fluorescence radiation 14. The document presented here thus discloses a technical teaching for a magnetic field camera head 21 for spatially resolved and imaging detection of the distribution of the strength of the magnetic flux density B with a resolution of better than 100 μm × 100µm, or better smaller than 50µm × 50µm, or better smaller than 20µm × 20µm, or better smaller than 10µm × 10µm, or better smaller than 5µm × 5µm, or better smaller than 2µm × 2µm, or better smaller than 1µm × 1µm. For these high resolutions, the crystals and/or nanocrystals 66 with the paramagnetic centers in the sensor layer 5 should be a factor greater than 2, better by a factor greater than 5, by a factor greater than 10, better by a factor greater than 20, better by a factor greater than 50, be a factor greater than 100 smaller than the effective length of the outer edge of the effective size of a pixel of the resolution as previously stated. For these high resolutions, the thickness 25 of the sensor layer 5 should be smaller by a factor greater than 2, better by a factor greater than 5, by a factor greater than 10, better by a factor greater than 20, better by a factor greater than 50, or by a factor greater than 100 as the effective length of the outer edge of the effective size of a pixel of the resolution as previously stated. The processing circuit for the nxm output signals 31 of the nxm light sensors of the light sensor array 1 prepares the typically analog signals of the nxm output signals 31 of the nxm light sensors of the light sensor array 1 and preferably digitizes them. This processing preferably includes amplification and/or filtering. Preferably, a computer system of the evaluation electronics 15, which is preferably part of the processing circuit, or a subsequent computer system 28 for operating the magnetic field camera head 21 multiplies the nxm measured values by nxm calibration values of an nxm calibration matrix. This serves to eliminate any inhomogeneities in the fluorescence intensity of the fluorescence radiation 14 that may still be present when the magnetic field B is homogeneous. Preferably, the computer system of the processing circuit of the evaluation electronics 15 passes on the corrected values of the output signals 31 of the light sensors of the light sensor array 1 via an interface circuit to a higher-level system, for example a higher-level computer system with a screen via a data bus or the like. The beam path of the pump radiation 13 and the fluorescent radiation 14 from the light source 2 to the light sensor array 1 is preferably located within a preferably light-tight housing 8. The optical long-pass filter 6 is preferably located in the optical path between the sensor layer 5 and the light sensor array 1. Preferably the optical long-pass filter 6 as close as possible to the surface or on the surface of the light sensor array 1. The optical long-pass filter 6 preferably ensures that essentially only electromagnetic radiation 14 with the fluorescence wavelength λ _fl , i.e. essentially only fluorescence radiation 14 the fluorescence wavelength λ _fl reaches the light sensors of the light sensor array 1.

The top 23 of the sensor layer 5 is preferably located inside the housing 8.

The underside 22 of the sensor layer 5 is preferably located outside the housing 8 on its surface. A light protector preferably covers the underside 22 of the sensor layer 5. This prevents light from penetrating the housing 8 and reaching the light sensor array 1. The sensor layer 5 is preferably transparent to electromagnetic radiation of the pump radiation wavelength λ _pmp . The sensor layer 5 is preferably transparent to electromagnetic radiation of the fluorescent radiation wavelength λ _fl .

For example, the light protection can be a varnish on the underside 22 of the sensor layer 5 or a particularly thin, opaque part 16 of the housing wall of the housing 8. Preferably Such a thin housing wall 16 of the housing 8 does not flow the magnetic field, for example the magnetic flux density B, in the area of the sensor layer 5.

The light sensor array preferably comprises 1 n x m light sensors, which are preferably arranged in an area. Here n and m are positive integers.

In the camera's field of view are lines 1320, 1310, 1330 of an exemplary tri-plate line 1380 with a sensor element in clearances 2340 and 2350. The use of other wave lines (1380, 1880, 2380, 6880, 6980) is conceivable. The use of a continuous sensor layer 5 without waveguides (1380, 1880, 2380, 6880, 6980) is also conceivable, in which case the use of microwave and/or RF excitation of the NV centers and/or paramagnetic centers of the sensor layer 5 is not possible is. The wave line (1380, 1880, 2380, 6880, 6980) can preferably be connected, for example, via a plug connection, such as a coaxial socket or a triax socket 71.

Figure 15

15 shows an exemplary, not to scale, cross section through the sensor layer 5.

A mirror coating 10 is applied to a carrier material 9. The carrier material 9 is located in the direction of the underside 22 of the sensor layer 5. The mirror coating 10 is located in the direction of the top 23 of the sensor layer 5 in relation to the carrier material 9. The mirror coating 10 is preferably impermeable to electromagnetic radiation with the pump radiation wavelength λ _pmp . The mirror coating 10 preferably reflects electromagnetic radiation with the pump radiation wavelength λ _pmp back into the interior of the housing 8. This has the advantage that the pump radiation 13 with the pump radiation wavelength λ _pmp passes through the layer with crystals and / or nanocrystals 66 with paramagnetic centers 11 twice. This doubles the pump power and thus the intensity of the fluorescent radiation 14, which reaches nxm light sensors of the light sensor array 1.

The mirror coating 10 preferably reflects electromagnetic radiation with the fluorescence radiation wavelength λ _fl back into the interior of the housing 8. This has the advantage that the fluorescence radiation 14 with fluorescence radiation wavelength λ _fl , which the paramagnetic centers of the layer with crystals and / or nanocrystals 66 with paramagnetic Centers 11 emit towards the bottom 22 of the sensor layer 5 and reflect back towards the surface of the top 23 of the sensor layer 5. This again doubles the intensity of the fluorescent radiation 14, which reaches n × m light sensors of the light sensor array 1.

According to the proposal, the layer with crystals and/or nanocrystals 66 with paramagnetic centers 11 is located on the mirror coating 10 towards the top 23 of the sensor layer 5.

A further carrier material layer 12 preferably covers the layer with crystals and/or nanocrystals 66 with paramagnetic centers 11. Preferably, the material of the carrier material layer 12 is transparent to electromagnetic radiation, in particular pump radiation 13, with pump radiation wavelength λ _pmp . Preferably, the material of the carrier material layer 12 is transparent to electromagnetic radiation with fluorescent radiation wavelength λ _fl .

The sensor layer 5 can include optical functional elements such as optical fibers and/or filters and/or photonic crystals and/or digital optics. The digital optics can be embossed into the surface of the sensor layer 5 or incorporated in some other way.

The sensor layer 5 can include optical functional elements such as optical fibers and/or filters.

Figure 16

16 shows a typical usage situation. The magnetic field camera head 21 is preferably placed on the surface 34 of the respective measurement object with the underside 24 of the housing 8. In 16 is the surface of the exemplary ferromagnetic material 17 on the surface 34 of the respective measurement object. The exemplary ferromagnetic material 17 of 16 has exemplary inhomogeneities in the form of exemplary defects 18 in the exemplary ferromagnetic material 17 16 on. Two auxiliary magnets 19 provide magnetic excitation of the magnetic test circuit. The example The magnetic test circuit here includes the two auxiliary magnets 19, the material of the measurement object in the form of the exemplary ferromagnetic material 17 and the air space around these objects. The exemplary defects 18 in the exemplary ferromagnetic material 17 of 16 distort the magnetic field in the area of these errors 18. The errors can be, for example, cracks, holes, grooves, cavities, material composition fluctuations and other structures whose magnetic material parameters lead to a change in the structure of the magnetic flux lines of the magnetic flux B in this Area of this error 18 result.

The errors 18 lead to a change in the distribution and strength of the magnetic flux B, which emerges from the material of the measurement object in the form of the exemplary ferromagnetic material 17 into the air space around these objects. This changes the distribution and direction of the magnetic flux density B as it penetrates the sensor layer 5. This in turn changes the intensity distribution of the intensity of the fluorescence radiation 14 of the paramagnetic centers of the sensor layer 5 in the sensor layer 5. This changes the fluorescence image of the sensor layer 5, which is the Fluorescence camera records by means of the imaging optics 7 and the n x m light sensors of the light sensor array 1. The light sensor array 1 detects the fluorescence image of the sensor layer 5 and transmits this fluorescence image of the sensor layer 5 to a computer system 28 for operating the magnetic field camera head 21. A computer system 28 preferably executes an image processing program for operating the magnetic field camera head 21. The computer system 28 for operating the magnetic field camera head 21 preferably determines a deviation between the fluorescence image of the defective measurement object and the fluorescence image of a fault-free measurement object or a calculated or otherwise generated reference fluorescence image. For example, the computer system 28 for operating the magnetic field camera head 21 can execute an AI program to classify the deviations and/or the errors and/or to evaluate the deviations and/or the errors. For example, the computer system 28 for operating the magnetic field camera head 21 can execute a neural network model to classify the deviations and/or the errors and/or to evaluate the deviations and/or the errors. For example, the computer system 28 for operating the magnetic field camera head 21 can execute an AI program for classifying and/or evaluating one or more fluorescence images. For example, the computer system 28 for operating the magnetic field camera head 21 can execute a neural network model for classifying and/or evaluating one or more fluorescence images.

In order to obtain a complete image of the condition of the surface 34 of the material of the measurement object, here in the form of the exemplary ferromagnetic material 17, the person measuring and/or a mechanical positioning device moves the magnetic field camera head 21, preferably at a speed 20, over the surface 34 of the material of the measurement object Measurement object, here in the form of the exemplary ferromagnetic material 17.

The auxiliary magnets 19 are preferably firmly connected to the magnetic field camera head 21 and/or are part of it. the auxiliary magnets 19 generate the necessary magnetic excitation H of the magnetic circuit, of which the sensor layer 5 is preferably part.

The auxiliary magnets 19 preferably include permanent magnets. The auxiliary magnets 19 can be or include electromagnets. If the auxiliary magnets 19 can comprise electromagnets, the processing circuit 30 for the output signals 31 of the light sensors of the light sensor array 1 and/or a computer system 28 for operating the magnetic field camera head 21 and/or another control device and/or another computer system can be used by means of a control device for the electromagnets Auxiliary magnets 19, for example, modulate the amplitude of the magnetic excitation H of the auxiliary magnets 19 with a code and / or a frequency.

The code can be, for example, a spreading code. For example, a pseudo-random number generator PRNG of the control device 39 for the electromagnets of the auxiliary magnets 19 can generate the spreading code in the form of a spreading code signal. The spreading code signal preferably has the clock frequency of the pseudo-random number generator PRNG. For example, the pseudo-random number generator PRNG can be a shift register fed back with a simple primitive polynomial. Typically, the auxiliary magnets then modulate the magnetic field strength H they generate at least in part with the respective amplitude of the spreading code signal of the control device 39 for the electromagnets of the auxiliary magnets 19. For the sake of simplicity, we also speak of a spreading code signal in the case of a monofrequency spreading code in the form of a single modulation frequency . The spreading code signal preferably has a lower limit frequency ω _u and an upper limit frequency ω _o . on. The spreading code signal preferably has an amplitude of essentially 0 below the lower limit frequency ω _u . Preferably, the spreading code signal above the upper limit frequency ω _o essentially has an amplitude of 0.

The carrier signal of the spreading code signal preferably has a carrier frequency which is typically equal to the frequency of the shift frequency of the typically linearly feedback shift register of the pseudo-random number generator PRNG. In the case of a monofrequency spreading code, the carrier frequency corresponds to this frequency of the spreading code. The carrier frequency is preferably equal to the frame rate (image repetition rate) with which the light sensors of the light sensor array 1 of the fluorescence camera capture the fluorescence image of the sensor layer 5. In the case of the magnetic field camera head 21 of the examples shown here, this frame rate was up to 160 frames per second. In the sense of the document presented here, the frame rate of the magnetic field camera is the rate of the generated and transmitted fluorescence images of the light sensors of the light sensor array 1 per second. The spreading code signal preferably fluctuates, for example, between the values 0 and 1.

Since the magnetic field strength H is then modulated with the spreading code signal, the magnetic flux density B, which penetrates the sensor layer 5, is then also modulated with the spreading code signal. Therefore, the intensity of the fluorescent radiation 14 is also modulated with the spreading code signal. The processing circuit 30 for the output signals 31 of the light sensors of the light sensor array 1 and/or the computer system 28 for operating the magnetic field camera head 21 preferably capture several fluorescence images of the light sensors of the light sensor array 1 of the fluorescence camera and multiply the amplitudes of the pixel values of the measured values of the light sensors of the light sensor array 1 by the inverse the value of the spreading code signal or with the inverse of the value of the sum of the value of the spreading code signal plus an offset. Division by 0 is not possible.

Preferably, the processing circuit 30 for the output signals 31 of the light sensors of the light sensor array 1 and/or the computer system 28 for operating the magnetic field camera head 21 evaluates several frames, i.e. fluorescence images, of the fluorescence camera, as the light sensors of the light sensor array 1, in an evaluation image sequence.

At the beginning of the evaluation sequence, the processing circuit 30 for the output signals 31 of the light sensors of the light sensor array 1 and/or the computer system 28 for operating the magnetic field camera head 21 initialize each light sensor of the light sensor array 1 from a respective pixel sum for the sum value of the relevant light sensor of the light sensor array 1 to a predeterminable initial value . Typically this initial value is 0.

Preferably, the processing circuit 30 for the output signals 31 of the light sensors of the light sensor array 1 and/or the computer system 28 for operating the magnetic field camera head 21 evaluates pixel values of a light sensor of the light sensor array 1 negatively at times when the spreading code signal assumes the values 0, for example, and takes the respective pixel value Light sensor of the light sensor array 1 therefore depends on a pixel sum for the sum value of the relevant light sensor of the light sensor array 1.

Preferably, the processing circuit 30 for the output signals 31 of the light sensors of the light sensor array 1 and/or the computer system 28 for operating the magnetic field camera head 21 evaluates pixel values of a light sensor of the light sensor array 1 at times when the spreading code signal assumes the values 1, for example, and adds the respective pixel value In this case, the light sensor of the light sensor array 1 is therefore added to a pixel sum for the sum value of the relevant light sensor of the light sensor array 1.

After the evaluation sequence has ended and the processing circuit 30 for the output signals 31 of the light sensors of the light sensor array 1 and / or the computer system 28 for operating the magnetic field camera head 21 the planned, several frames, i.e. fluorescence images, of the fluorescence camera, i.e. the light sensors of the light sensor array 1, in the After evaluating the evaluation image sequence, the processing circuit 30 for the output signals 31 of the light sensors of the light sensor array 1 and/or the computer system 28 for operating the magnetic field camera head 21 generate an improved fluorescence image from the resulting respective pixel sums for the respective sum values of the respective light sensors of the light sensor array 1.

This approach eliminates background noise and increases sensitivity.

In the camera's field of view are lines 1320, 1310, 1330 of an exemplary tri-plate line 1380 with a sensor element in clearances 2340 and 2350. The use of other wave lines (1380, 1880, 2380, 6880, 6980) is conceivable. The use of a continuous sensor layer 5 without waveguides (1380, 1880, 2380, 6880, 6980) is also conceivable, in which case the use of microwave and/or RF excitation of the NV centers and/or paramagnetic centers of the sensor layer 5 is not possible is. The wave line (1380, 1880, 2380, 6880, 6980) can preferably be connected, for example, via a plug connection, such as a coaxial socket or a triax socket 71.

Figure 17

17 shows the system of 14 simplified with the control and evaluation devices as a block diagram.

The light source 2 emits pump radiation 13 with a pump radiation wavelength λ _pmp and unwanted electromagnetic radiation 27 of other wavelength ranges. An optical shortpass filter 4 preferably allows only the pump radiation 13 to pass and preferably retains the electromagnetic radiation 27 of other wavelength ranges. If the light source 2 does not emit any unwanted electromagnetic radiation 27 of other wavelength ranges, this optical shortpass filter 4 is not necessary. Illumination optics 3 ensure that the pump radiation 13 illuminates the sensor layer 5 as homogeneously as possible. The lighting optics 3 can include one or more optical functional elements. The sensor layer 5 is preferably applied to a mechanical support, for example a flat surface 16. The flat surface 16 is preferably part of the housing wall of the housing 8, not shown here. The material of this flat surface 16 or the housing wall of the housing 8 in this area is preferably non-magnetic and preferably does not essentially influence the magnetic field. The sensor layer 5 preferably comprises a large number of randomly and preferably uniformly oriented crystals and/or nanocrystals 66 with paramagnetic centers. When using diamond as a crystal material, the paramagnetic centers can be, for example, NV centers and/or SiV centers and/or TiV centers and/or GeV centers and/or SnV centers and/or NiN4 centers and /or PbV centers and/or ST1 centers act. When using NV centers in diamond as crystals and/or nanocrystals 66 of the sensor layer 5, the pump radiation 13 preferably has a pump radiation wavelength λ _pmp in a wavelength range of 400 nm to 700 nm wavelength and/or better 450 nm to 650 nm and/or better have 500 nm to 550 nm and/or better 515 nm to 540 nm. A wavelength of 532 nm is clearly preferred as the pump radiation wavelength λ _pmp . In the case of using NV centers in diamond or in diamonds of the sensor layer 5, a laser diode from Osram of the type PLT5 520B is suitable, for example, as a light source 2 with a 520 nm pump radiation wavelength λ _pmp . When using NV centers in diamond crystals in the sensor layer 5 as paramagnetic centers of the sensor layer 5, the NV centers of the sensor layer 5 typically emit fluorescence radiation 14 _with a typical fluorescence wavelength λ _fl of approx 637nm at NV centers. An imaging optics 7 preferably captures the fluorescence image of the location-dependent fluorescence intensity of the fluorescence radiation 14 with the fluorescence wavelength λ _fl , which the sensor layer 5 generates by means of the paramagnetic centers in the sensor layer 5. An optical longpass filter 6 preferably allows electromagnetic radiation with the fluorescence wavelength λ _fl and thus the fluorescence radiation 14 to pass. The optical long-pass filter 6 preferably blocks the passage of electromagnetic radiation with the pump radiation wavelength λ _pmp and thus the passage of the pump radiation 13. This allows the imaging optics 7 to capture the fluorescence image of the sensor layer 5 in the wavelength range of the fluorescence wavelength λ _fl and to the nxm light sensors of the nxm Image the light sensor array 1 of the fluorescence camera. Since the intensity of the fluorescence radiation 14 of the sensor layer 5 depends locally in the sensor layer 5 on the magnetic flux density B at the location of the respective paramagnetic center in the sensor layer 5, the fluorescence image of the sensor layer 5 corresponds to a magnetic flux density image of the magnetic flux density field that flows through the sensor layer 5. Since, as a rule, the density distribution of the paramagnetic centers in the sensor layer 5 and/or the illumination of the sensor layer 5 with pump radiation 13 and/or the detection of the fluorescence intensity of the fluorescence radiation 14 over the surface of the sensor layer 5 are not completely homogeneous despite all efforts, it has It is a good practice to calibrate the system through calibration measurements before first use. To process the measured values of the light sensors of the light sensor array 1, evaluation electronics 15 of the light sensor array 1 record the measured values of the signals of the light sensors of the light sensor array 1 and form the output signals 31 of the light sensors of the light sensor array 1, in particular by amplification and/or filtering. The processing circuit 30 for the output signals 31 the light sensors of the light sensor array 1 preferably controls by means of a control device 35 for the Electromagnets of the auxiliary magnets 19 the auxiliary magnets 19 if they do not only include permanent magnets. The processing circuit 30 for the output signals 31 of the light sensors of the light sensor array 1 generates a fluorescence image and/or, for example, possibly also an improved fluorescence image, from the output signals 31 of the light sensors of the light sensor array 1, as described above. Due to the relationships presented above, the fluorescence image and/or, for example, possibly also the improved fluorescence image represent a magnetic flux density image of the magnetic flux density field in the sensor layer 5 or an improved magnetic flux density image of the magnetic flux density field in the sensor layer 5. The processing circuit 30 for the output signals 31 of the light sensors of the light sensor array 1 transmits this fluorescence image or the improved fluorescence image, preferably by means of the interface circuit 36 via a data bus 29, to a computer system 28 for operating the magnetic field camera head 21. The computer system 28 for operating the magnetic field camera head 21 preferably generates one from this fluorescence image or from the improved fluorescence image one- or two- or three-dimensional representation of the distribution of the magnetic flux density in the sensor layer 5 and displays this on the screen 32. The data bus 29 serves to establish the data connection between the processing circuit 30 for the output signals 31 of the light sensors of the light sensor array 1 and the computer system 28 for operating the magnetic field camera head 21. The measurement object, here for example a ferromagnetic material 17 with defects 18, generates the variations of the magnetic flux density B in the sensor layer 5, which lead to the said magnetic flux density absolute images of the magnetic flux density field in the sensor layer 5 or the improved magnetic flux density absolute images of the magnetic flux density field in the sensor layer 5.

Figure 18

18 shows a drawing based on an exemplary photo of an exemplary sensor head 21 with the cover removed, which was created during the development of the proposal presented here. The drawing essentially corresponds to that 13 . The supply line with the data bus 29 for establishing the data connection between the processing circuit 30 for the output signals 31 of the light sensors of the light sensor array 1 and the computer system 28 for operating the magnetic field camera head 21 can also be seen. The light source 2 and the sensor layer 5 irradiated with green pump radiation 13 can also be seen .

In the camera's field of view are lines 1320, 1310, 1330 of an exemplary tri-plate line 1380 with a sensor element in clearances 2340 and 2350. The use of other wave lines (1380, 1880, 2380, 6880, 6980) is conceivable. The use of a continuous sensor layer 5 without waveguides (1380, 1880, 2380, 6880, 6980) is also conceivable, in which case the use of microwave and/or RF excitation of the NV centers and/or paramagnetic centers of the sensor layer 5 is not possible is. The wave line (1380, 1880, 2380, 6880, 6980) can preferably be connected, for example, via a plug connection, such as a coaxial socket or a triax socket 71.

Figure 19a

19a shows a drawing based on an exemplary photo of an exemplary sensor head 21 with the cover removed, which was created during the development of the proposal presented here. The drawing essentially corresponds to that too 13 . You can see the light source 2, the underside 24 of the housing 8, the imaging optics 7 in the form of a camera lens and a previously unmentioned mirror 3 for homogenizing the pump radiation intensity of the pump radiation 13 on the sensor layer 5. The magnetic field camera head 21 19a is an example of lighting optics 3, which includes several optical functional elements.

Figure 19b

19b essentially corresponds to that 19a and shows the same magnetic field camera head 21 from a slightly different perspective. The light sensor array 1 and the optical longpass filter 6 are housed in the gray protuberance. The thickness of the housing wall of the housing 8 in the area of the sensor layer 5 and the underside 24 of the housing 8 can be clearly seen. The supply line with the data bus 29 for establishing the data connection between the processing circuit 30 for the output signals 31 of the light sensors of the light sensor array 1 and the computer system 28 for operating the magnetic field camera head 21. In addition, the light source 2 and the sensor layer 5 irradiated with green pump radiation 13 are closed recognize. The exemplary magnetic field camera head 21 is able to display the local distribution of magnetic flux densities with amounts from 0mT to approximately 50mT.

Figure 20

20 shows a drawing of the prototype with the lid attached. The interior of the housing 8 of the magnetic field camera head 21 is then closed in a light-tight manner.

Figures 21 and 22

22 Above shows the pattern-coded magnetic flux density image 39 of the distribution of the magnetic flux density of four permanent magnets 37 on a glass plate 38 in arbitrary units. The system of 17 generated this two-dimensional false-color magnetic flux density image 39 of the distribution of the magnetic flux density of four permanent magnets 37 on a glass plate 38 by placing the magnetic field camera head 21 of the previous pages with its underside 24 on the permanent magnets 37. (See this 21 )

22 below shows the one-dimensional course of the fluorescence intensity along a line through the grouping of permanent magnets 37. The magnetic field camera can resolve structures smaller than 500µm.

These two images are drawings based on screenshots of the display on screen 32.

Figure 23

23 shows a representation for four magnetized rings. The 22 bottom left shows the corresponding arrangement as a drawing based on a photo.

Figures 24 and 25

The 24 equals to 21 . The 25 equals to 22 . When creating the 25 now became a magnetizable ferromagnetic flat figure (see 23 ) used.

25 Above shows the two-dimensional pattern-coded magnetic flux density image 39 of the distribution of the magnetic flux density of the magnetized figure on a glass plate 38 in arbitrary units. The system of 17 generated this pattern-coded magnetic flux density image 39 of the distribution of the magnetic flux density of four permanent magnets 37 on a glass plate 38 by placing the magnetic field camera head 21 of the previous pages with its underside 24 on the magnetized figure 24 .

26 below shows the one-dimensional course of the fluorescence intensity along a line through the magnetized figure of 24 through.

These two images are drawings based on screenshots of the display on screen 32.

Figure 26

26 shows a representation of an inhomogeneously magnetized ring. The 26 bottom left shows the corresponding arrangement as a drawing based on a photo.

Figure 27

27 shows the sensor head with attached auxiliary magnets 19.

Figure 28

28 shows the detection and display of holes in a ferromagnetic material 17 with a device 28 , 16 and 17 . One of the two images is a drawing based on a screenshot of the display on screen 32. The other image is a drawing based on a photo of the measurement situation.

Figure 29

The 29 shows an exemplary, alternative magnetic field camera head 21 of an exemplary, alternative magnetic field camera. The housing 8 of this exemplary, alternative magnetic field camera head 21 of the exemplary, alternative magnetic field camera includes, for example, an upper housing part 40 of the housing 8 and a lower housing part 41 of the housing 8. For example, the upper housing part 40 of the housing 8 can be an upper 3D printed housing part of the exemplary 3D printed housing 8. For example, the lower housing part 41 of the housing 8 can be a lower 3D printed housing part of the exemplary 3D printed housing 8. The lower housing part 41 of the housing 8 here includes, for example, the underside 24 of the housing 8 with the sensor layer 5, which preferably includes the layer 11 with crystals and/or nanocrystals 66 with paramagnetic centers. The sensor layer 5 is preferably covered by a thin material layer of the lower housing part 41 of the housing 8 on the underside 24 of the housing 8 and is thereby mechanically protected. The material of this thin material layer of the lower housing part 41 of the housing 8 on the underside 24 of the housing 8 preferably influences the magnetic flux density in amount and direction that flows through the sensor layer 5, preferably essentially not. Essentially this means that the material of this thin material layer of the lower housing part 41 of the housing 8 on which the underside 24 of the housing 8 influences the magnetic flux density that flows through the sensor layer 5, that this influence is irrelevant for the respective technical purpose and / or that this influence to influence a measured value, which is dependent on the fluorescence radiation 14 of the layer 11, only influences it so little that this measured value only experiences a change in amount that lies within a predetermined tolerance interval. A power supply line 55 is electrically connected to the circuit board (PCB) 43 for the LEDs 44 and their power supply 45 and the LEDs 44 in the lower housing part 41 of the housing 8 by means of a connecting plug 56 for the power supply line 55. The energy supply line 55 serves to supply energy to the circuit board (PCB) 43 for the LEDs 44 and their energy supply 45 and the LEDs 44.

A data bus line of a data bus 29 is used to establish the data connection between the processing circuit 30 for the output signals 31 of the light sensors of the light sensor array 1 and the computer system 28 for operating the magnetic field camera head 21. (see also 17 )

A second heat sink 49 serves to cool the circuit board (PCB) 43 for the LEDs 44 and their power supply 45 and the LEDs 44. The second heat sink 49 preferably comprises copper or another thermally highly conductive material, which preferably has the magnetic flux density that the layer 11 of the sensor layer 5 is flooded, not or worse essentially not or worse only slightly influenced, than heat sink material of the second heat sink 49. The elaboration of the proposal showed that it is advantageous to keep the temperature of the light sensor array 1 and / or the sensor layer 5 low to keep the signal-to-noise ratio as large as possible. Despite their relatively good efficiency during operation, the LEDs 44 generate a large amount of waste heat, which the second heat sink 49 removes from the housing 8 to improve the signal-to-noise ratio.

For the same reason, the magnetic field camera head 21 proposed here as an example has a first heat sink 50 for cooling the evaluation electronics 15 of the light sensor array 1 and/or the light sensor array 1. The first heat sink 50 thereby improves the signal-to-noise ratio of the video signal of the light sensor array 1 in the fluorescence camera of the sensor head 21.

Figure 30

30 shows schematically and simplified a cross section through the magnetic field camera head 21 29 .

The housing 8 of the magnetic field camera head 21 includes, for example, again, as in the 29 an upper housing part 40 of the housing 8 and a lower housing part 41 of the housing 8.

The lower housing part 41 of the housing 8 includes, for example, a circuit board (PCB) 43 for the LEDs 44 and their power supply 45.

Here, for example, LED series resistors 59 are mounted on the circuit board (PCB) 43, for example soldered or glued on. These LED series resistors 59 are typically LED series resistors 59 of the LEDs 44 on the circuit board (PCB) 43 for current limiting of the diode current of the LEDs 44 during operation.

Preferably, a thin material layer of the lower housing part 41 of the housing 8 covers the sensor layer 5. and protects it. For a better overview, this material layer of the lower housing part 41 of the housing 8 is as thin as possible 30 not shown. The bearing of this thin material layer in the area of the sensor layer 5 is essentially the same as the underside 24 of the housing 8.

A coding plug 62 with jumper mounted on the circuit board (PCB) 43 can be used, for example, to change analog operating parameters of the electronic circuit on the circuit board (PCB) 43. For example, it is conceivable that it is possible to adjust the electrical LED current through the LEDs 44 on the circuit board (PCB) 43 using such a coding plug 62 by positioning the jumper. The coding plug 62 typically provides several different possible positions for the jumper on the coding plug 62, each of which preferably corresponds to a very specific energization of the LEDs 44 with an electrical current with a very specific current value.

In the example of the 30 the LED series resistors 59 are mounted on the side of the circuit board (PCB) 43 facing the fluorescence camera. In the example of the 30 the LEDs 44 are mounted on the side of the circuit board (PCB) 43 facing away from the fluorescence camera. This has the advantage that little or no scattered light from the LEDs 44 can reach the light sensor array 1 in the fluorescence camera of the magnetic field camera head 21. This improves the signal-to-noise ratio of the measurement signal of the magnetic field camera head 21. The sensor layer 5 is preferably firmly connected to the circuit board (PCB) 43 mechanically, for example by an adhesive 48.

The sensor layer 5 preferably, but not necessarily, comprises a glass plate 46

The glass plate is used here in the example 30 as an exemplary optical functional element that the paramagnetic centers of the pump radiation 13 with the pump radiation wavelength λ _pmp . The glass plate 46 preferably forms the flat surface 16 of the lower housing part 41 of the housing 8. The glass plate 46 has here in the example 30 also the function of the carrier material II 12.

The first heat sink 50 serves to cool the evaluation electronics 15 of the light sensor array 1 and/or the light sensor array 1. The first heat sink 50 preferably comprises copper and/or another thermally highly conductive, preferably essentially non-magnetic material as the heat sink material of the first heat sink 50. Preferred the first heat sink 50 is in the best possible thermal contact with the camera housing 54 of the fluorescence camera with the light sensor array 1 with its evaluation electronics 15 and the imaging optics 7.

For example, thermal paste 53 and/or a thermal adhesive 53 can thermally and/or mechanically connect cooling fins 51 to the first heat sink 50. As a result, the heat sink 50 can release the heat of the evaluation electronics 15 of the light sensor array 1 of the fluorescence camera into the ambient air and reduce the temperature of the light sensor array 1. This improves the signal-to-noise ratio of the data signal from the light sensor array 1 via the data line 29.

In the example, the fluorescence camera has 30 a camera housing 54 of the fluorescence camera with the light sensor array 1. In the example of the 30 is the camera housing 54 of the fluorescence camera with the light sensor array 1 with its evaluation electronics 15 and the imaging optics 7 inserted or screwed in or glued into the upper housing part 40 of the housing 8 or the like. In contrast to the devices of the 11 , 12 , 13 , 14 , 16 , 18 , 19 , 20 The pump radiation sources now do not irradiate the sensor layer 5 as in the figure 11 , 12 , 13 , 14 , 16 , 18 , 19 , 20 from above, but from the side of the glass plate 46. The LEDs 44 shine in the example of 30 from the side into the glass plate 46 the pump radiation 13 with the pump radiation wavelength λ _pmp . The pump radiation 13 preferably emerges from the glass plate again over the entire surface of the glass plate 46 and thereby irradiates the layer 11 with the crystals and/or nanocrystals 66 with the paramagnetic centers, for example the NV centers, on the underside of the glass plate 46 the side of the glass plate 46 facing away from the light sensor array 1. As a result, the LEDs 44 excite the crystals and / or nanocrystals 66 with the paramagnetic centers, for example the NV centers, on the underside of the glass plate 46 on the light Sensorarray 1 opposite side of the glass plate 46 for the emission of fluorescent radiation 14. A preferably present reflective layer 10 below the layer 11 with the crystals and/or with the nanocrystals 66 with the paramagnetic centers, for example the NV centers, on the underside of the glass plate 46 on the side of the glass plate 46 facing away from the light sensor array 1 reflects pump radiation 13 and fluorescent radiation 14, which emerges downwards from the layer 11 on the side of the glass plate 46 facing away from the light sensor array 1, back into the layer 11. The back-reflected pump radiation 13 increases the generation of the fluorescent radiation 14 in the layer 11. The back-reflected fluorescent radiation 14, like the fluorescent radiation 14 emitted directly in the direction of the light sensor array 1, reaches the light sensor array 1 and thus improves the signal-to-noise ratio.

Typically, the local intensity of the fluorescence radiation 14 of the paramagnetic centers in the layer 11 of the sensor layer 5 at different positions in the layer 11 depends on the intensity of the pump radiation 13 and the amount of the magnetic flux density B at these positions.

This results in an intensity pattern of the emission of the fluorescence radiation 14 of the paramagnetic centers in the layer 11 of the sensor layer 5 at different positions in the layer 11, which shows the areal differences in the amounts of the intensity of the fluorescence radiation 14 of the paramagnetic centers in the layer 11 of the sensor layer 5 at different positions of layer 11.

The imaging optics 7 detects this intensity pattern of the emission of the fluorescence radiation 14 of the paramagnetic centers in the layer 11 of the sensor layer 5 and images this intensity pattern onto the light sensor array 1.

The camera housing 54 of the fluorescence camera connects the light sensor array 1 in the example of 30 mechanically with its evaluation electronics 15 and the imaging optics 7 and with the upper housing part 40 of the housing 8.

The data bus 29 for establishing the data connection between the processing circuit 30 for the output signals 31 of the light sensors of the light sensor array 1 and the computer system 28 for operating the magnetic field camera head 21 is in the example 30 omitted for simplicity. When reading this text, a knowledgeable person should consider this data bus 29 for establishing the data connection between the processing circuit 30 for the output signals 31 of the light sensors of the light sensor array 1 and the computer system 28 for operating the magnetic field camera head 21.

The energy supply line 55 for supplying energy to the circuit board (PCB) 43 for the LEDs 44 and their energy supply 45 and the LEDs 44 is in the example 30 omitted for simplicity. When reading this text, a knowledgeable person should consider this energy supply line 55 for supplying energy to the circuit board (PCB) 43 for the LEDs 44 and their energy supply 45 and the LEDs 44.

Figure 31

31 essentially corresponds to that 30 and shows the same magnetic field camera head 21 as the device 30 and the 29 from a different perspective. The document presented here therefore refers to the descriptions of the 29 and 30 and the reference symbol list. The energy supply line 55 for supplying energy to the circuit board (PCB) 43 for the LEDs 44 and their energy supply 45 and the LEDs 44 is in the example 31 cut and therefore only incompletely presented. The data bus 29 for establishing the data connection between the processing circuit 30 for the output signals 31 of the light sensors of the light sensor array 1 and the computer system 28 for operating the magnetic field camera head 21 is in the example 31 omitted for simplicity. When reading this text, a knowledgeable person should consider this data bus 29 for establishing the data connection between the processing circuit 30 for the output signals 31 of the light sensors of the light sensor array 1 and the computer system 28 for operating the magnetic field camera head 21.

In the camera's field of view are lines 1320, 1310, 1330 of an exemplary tri-plate line 1380 with a sensor element in clearances 2340 and 2350. The use of other wave lines (1380, 1880, 2380, 6880, 6980) is conceivable. The use of a continuous sensor layer 5 without waveguides (1380, 1880, 2380, 6880, 6980) is also conceivable, in which case the use of microwave and/or RF excitation of the NV centers and/or paramagnetic centers of the sensor layer 5 is not possible is. The waveguide (1380, 1880, 2380, 6880, 6980) can, for example, via a Plug connection, such as a coaxial socket or a triax socket 71, are preferably connected.

Figure 32

32 in this respect essentially corresponds to 29 to 31 , than that 32 now a cross section through the magnetic field camera head 21 29 to 31 transversely to the first heat sink 50 shows. The document presented here therefore refers to the descriptions of the 29 to 31 and the reference symbol list.

In the camera's field of view are lines 1320, 1310, 1330 of an exemplary tri-plate line 1380 with a sensor element in clearances 2340 and 2350. The use of other wave lines (1380, 1880, 2380, 6880, 6980) is conceivable. The use of a continuous sensor layer 5 without waveguides (1380, 1880, 2380, 6880, 6980) is also conceivable, in which case the use of microwave and/or RF excitation of the NV centers and/or paramagnetic centers of the sensor layer 5 is not possible is. The wave line (1380, 1880, 2380, 6880, 6980) can preferably be connected, for example, via a plug connection, such as a coaxial socket or a triax socket 71.

Figure 33

33 in this respect essentially corresponds to 29 to 32 , than that 33 a side view without a cut from a different perspective. The document presented here therefore refers to the descriptions of the 29 to 32 and the reference symbol list.

The data bus 29 for establishing the data connection between the processing circuit 30 for the output signals 31 of the light sensors of the light sensor array 1 and the computer system 28 for operating the magnetic field camera head 21 is in the example 33 omitted for simplicity. When reading this text, a knowledgeable person should consider this data bus 29 for establishing the data connection between the processing circuit 30 for the output signals 31 of the light sensors of the light sensor array 1 and the computer system 28 for operating the magnetic field camera head 21.

Figure 34

34 in this respect essentially corresponds to 29 to 33 , than that 34 a side view with a horizontal section from a perspective from below with a view of the sensor layer 5 on the underside 24 of the sensor head 21 29 to 33 . The document presented here therefore refers to the descriptions of the 29 to 33 and the reference symbol list.

The upper housing part 40 of the housing 8 and the energy supply line 55 are cut and therefore only partially shown, without the cut surfaces in the 34 are visible.

Figure 35

35 equals to 34 with the difference that the one in the 34 shown cut part of the magnetic field camera head 21 is now shown with the cut surface upwards instead of downwards.

35 in this respect essentially corresponds to 29 to 35 , than that 35 represents a side view with horizontal section and view from above. The document presented here therefore refers to the descriptions of the 29 to 34 and the reference symbol list.

In the later field of view of the camera there are lines 1320, 1310, 1330 of an exemplary tri-plate line 1380 with a sensor element in the clearances 2340 and 2350. The use of other wave lines (1380, 1880, 2380, 6880, 6980) is conceivable. The use of a continuous sensor layer 5 without waveguides (1380, 1880, 2380, 6880, 6980) is also conceivable, in which case the use of microwave and/or RF excitation of the NV centers and/or paramagnetic centers of the sensor layer 5 is not possible is. The wave line (1380, 1880, 2380, 6880, 6980) can preferably be connected, for example, via a plug connection, such as a coaxial socket or a triax socket 71.

Figure 36

36 shows the first heat sink 50 before being inserted into the housing 8. In the example presented here 29 to 36 The document presented here proposes to provide an elastic and thermally conductive material 57 and/or a thermally conductive insulation film 58 between the heat sink 50 and the housing 8, which ensure electrical insulation and/or reduce the occurrence of mechanical stresses when heated due to different thermal expansion coefficients.

Figure 37

37 shows an exemplary second heat sink 49 for cooling the circuit board (PCB) 43 for the LEDs 44 and their power supply 45 and the LEDs 44 before its installation in a sensor head in accordance with 29 to 36 . The second heat sink 49 preferably comprises copper as the heat sink material of the second heat sink 49 or another heat sink material that has good thermal conductivity.

Figure 38

38 shows the lower housing part 41 of the housing 8 of a magnetic field camera head 21 according to 29 to 37 with the circuit carrier (PCB) 43 before installation in the housing 8. The circuit carrier (PCB) 43 is mounted with the LEDs 44 downwards on the lower housing part 41 of the housing 8. The LEDs 44 are therefore not visible. The LED series resistors 59 of the LEDs 44 are located on the visible top side on the circuit board (PCB) 43 for the LEDs 44. For better clarity, it should be mentioned here that the reference number 59 refers to the series resistors 59 of the LEDs 44 and not to the sensor layer 5 relates. The sensor layer 5 is attached with its glass plate 46 to the circuit board (PCB) 43 for the LEDs 44. The circuit board (PCB) 43 for the LEDs 44 has an opening so that the fluorescence radiation 14 of the paramagnetic centers in the layer 11 on the underside of the glass plate 46 reach the light sensor array 1 through the glass plate 46 and the opening in the circuit board (PCB) 43 can.

• Ein Anschlussstecker 56 für die Energiezuleitung 55 dient der Energieversorgung des Schaltungsträgers (PCB) 43 für die LEDs 44 und deren Energieversorgung 45 und der LEDs 44.
• Typischerweise befinden sich auf der Oberseite des Schaltungsträgers (PCB) 43 für die LEDs 44 weitere elektronische Bauteile 60 beispielsweise für die Energieversorgung der LEDs 44.

Using a jumper on the exemplary coding plug 62, the intensity of the pump radiation 13 of the LEDs 44 can be adjusted, for example, by selecting voltage divider output values or the like.

• A connecting plug 56 for the power supply line 55 serves to supply power to the circuit board (PCB) 43 for the LEDs 44 and their power supply 45 and the LEDs 44.
• Typically, there are further electronic components 60 on the top of the circuit board (PCB) 43 for the LEDs 44, for example for supplying energy to the LEDs 44.

For example, a voltage regulator 61 as such a further component 60 can be located on the top of the circuit board (PCB) 43 for the LEDs 44.

In the example of the 38 Elastic and thermally conductive materials 57 between the lower housing part 41 of the housing 8 and the upper housing part 40 of the housing 8 serve to reduce the occurrence of mechanical stresses when heated as a result of different thermal expansion coefficients and / or different thermal loads.

In the later field of view of the camera there are lines 1320, 1310, 1330 of an exemplary tri-plate line 1380 with a sensor element in the clearances 2340 and 2350. The use of other wave lines (1380, 1880, 2380, 6880, 6980) is conceivable. The use of a continuous sensor layer 5 without waveguides (1380, 1880, 2380, 6880, 6980) is also conceivable, in which case the use of microwave and/or RF excitation of the NV centers and/or paramagnetic centers of the sensor layer 5 is not possible is. The wave line (1380, 1880, 2380, 6880, 6980) can preferably be connected, for example, via a plug connection, such as a coaxial socket or a triax socket 71.

Figure 39

39 shows the underside of the circuit board (PCB) 43 of a magnetic field camera head 21 according to 29 to 38 with the series resistors 59 of the LEDs 44. The circuit board (PCB) 43 is for use in a magnetic field camera head 21 in accordance with 29 to 38 intended. The Opening 65 in the circuit carrier (PCB) 43 serves to ensure that the fluorescence radiation 14 of the paramagnetic centers, for example the NV centers, in the layer 11 of the sensor layer 5 on the underside of the glass plate 46 through the glass plate 46 and the opening in the circuit carrier (PCB) 43 can reach the light sensor array 1. By means of a coding plug 62 in the example 39 the user can adjust the brightness of the LEDs 44. Users can preferably adjust the output voltage of the voltage regulator 61 using the coding plug 62. The voltage regulator 62 preferably supplies the LEDs 44 via the series resistors 59 of the LEDs 44. The coding plug 62 is therefore preferably used to change analog operating parameters of the electronic circuit on the circuit board (PCB) 43.

In the later field of view of the camera there are lines 1320, 1310, 1330 of an exemplary tri-plate line 1380 with a sensor element in the clearances 2340 and 2350. The use of other wave lines (1380, 1880, 2380, 6880, 6980) is conceivable. The use of a continuous sensor layer 5 without waveguides (1380, 1880, 2380, 6880, 6980) is also conceivable, in which case the use of microwave and/or RF excitation of the NV centers and/or paramagnetic centers of the sensor layer 5 is not possible is. The wave line (1380, 1880, 2380, 6880, 6980) can preferably be connected, for example, via a plug connection, such as a coaxial socket or a triax socket 71.

Figure 40

40 shows the underside of the circuit board (PCB) 43 of a magnetic field camera head 21 according to 29 to 39 with the LEDs 44. 40 shows the underside of the circuit board (PCB) 43 of the previous one 39 . A glass plate 46 is attached to the circuit board (PCB) 43 using four adhesive points with adhesive 48. This glass plate 46 serves as an exemplary optical functional element. The LEDs 44 radiate the pump radiation 13 with the pump radiation wavelength λ _pmp over the edges of the glass plate 46 into the material of the glass plate 46 that is transparent to electromagnetic radiation, in particular pump radiation 13, of the pump radiation wavelength λ _pmp . Typically, part of this pump radiation 13 emerges in the direction from that glass plate surface of the glass plate 46, which faces away from the light sensor array 1, and there irradiates the sensor layer 5, which includes the layer 11 with the paramagnetic centers, for example NV centers, with pump radiation 13 the pump radiation wavelength λ _pmp . This stimulates the paramagnetic centers in the layer 11 to emit a magnetic field-dependent fluorescent radiation 14, which the light sensor array 1 can detect in a spatially resolved manner using the imaging optics 7 and capture it as an image.

Unfortunately, the intensity distribution of the intensity of the pump radiation 13 emerging from this opposite glass plate surface of the glass plate 46 at a point on the surface of the glass plate 46 is dependent on the inverse square distance of this point on the surface of the glass plate 46 from the LED 44 in question. This distance dependence can be compensated for by a diffuser structure in a diffuser layer 69 on this facing glass plate surface of the glass plate 46. The glass plate 46 is therefore preferably provided on the surface facing away from the light sensor array 1 with a diffuser structure in a diffuser layer 69, which ensures homogeneous illumination of the layer 11 and thus of the paramagnetic centers contained in the layer 11 with pump radiation 13 ensured by the LEDs 44.

This system consisting of a glass plate 46, the LEDs 44, which radiate pump radiation 13 from the edges of the glass plate 46 into the material of the glass plate 46, the diffuser layer 69 and the layer 11 with the paramagnetic centers, is ultimately a flat area lighting system , with: a) a flat pump radiation source (44, 46) for pump radiation 13 with the pump radiation wavelength λ _pmp , which has a substrate and at least one region formed on the substrate (glass wafer 46), which is essentially not pixelated and emits pump radiation 13, the pump radiation 13 radiates in every direction from at least one side of the flat pump radiation source emitting pump radiation 13 (downward-facing surface of the glass plate 46); and b) an optical layer directing pump radiation 13 - for example the glass plate 46 - which is arranged on the side (edge of the glass plate 46) emitting at least one pump radiation 13 above the area of a point-shaped or flat pump radiation source (exemplary LEDs 44) emitting pump radiation 13 , in which the optical layer that directs pump radiation 13 - in particular the glass plate 46 - preferably deflects pump radiation 13 from a direction that is perpendicular to the surface of the pump radiation 13 (light propagation plane of the pump radiation 13 in the glass plate 46) emitting side of the flat or point-shaped pump radiation source (46, 44) runs.

In one embodiment of the flat surface lighting system, the pump radiation 13-directing optical layer (glass plate 46) has a structured first surface (underside of the glass plate 46), which is arranged adjacent to the pump radiation 13 emitting side of the point-shaped or flat pump radiation source (LEDs 44).

In one embodiment of the flat surface lighting system, the pump radiation 13-directing optical layer (glass plate 46) has a flat first surface, which is arranged at right angles opposite the pump radiation 13 emitting side of the point-shaped or planar pump radiation source (LEDs 44).

In one embodiment of the flat surface lighting system, the pump radiation 13-directing optical layer (glass plate 46) has a flat first surface which is arranged opposite the pump radiation 13 emitting side of the flat pump radiation source (LEDs 44).

In one embodiment of the flat surface lighting system, the structured first surface of the optical layer (glass plate 46) directing the pump radiation 13 has triangular prisms or a diffuser layer 69 applied to the first surface of the pump radiation 13 (glass plate 46), for example as a diffuser .

In one embodiment of the flat surface lighting system, the structured surface has, for example, cylindrical lenses or other optical and/or micro-optical functional elements.

In one embodiment of the flat area lighting system, the structured surface has a plurality of wedge-shaped structures that have a long axis, the axes of the wedge-shaped structures then preferably being aligned in a common direction.

In one embodiment of the flat area lighting system, a flat pump radiation source comprises OLEDs or VCSELs as LEDs 44.

In one embodiment of the flat surface lighting system, the pump radiation 13-directing optical layer (glass plate 46) has a flat first surface, which is arranged opposite the pump radiation 13 emitting side of the point-shaped or planar pump radiation source (LEDs 44), with preference being given to the planar pump radiation sources (LEDs). 44) OLEDs or VCSELs as LEDs 44 include.

In one embodiment of the flat surface lighting system, the flat surface lighting system comprises a diffuser in a diffuser layer 69, which is arranged between the optical layer directing pump radiation 13 and the flat pump radiation source.

In one embodiment of the flat area lighting system, the area lighting system comprises a second optical layer directing pump radiation 13, which is arranged above the optical layer directing pump radiation 13 and parallel to the optical layer directing pump radiation 13.

In one embodiment of the flat surface lighting system, for example, the optical layer directing pump radiation 13 is divided into a plurality of areas and structures directing pump radiation 13 are aligned in one area at an angle that differs from the angle of light-directing structures in a second area.

The layer 11 with the paramagnetic centers is preferably located on the surface of the flat surface lighting system, for example on the surface of a diffuser layer 69 of a diffuser, which is preferably again located on a surface of said glass plate 46.

• • Pumpstrahlungsquellen, hier beispielhaft in Form der LEDs 44,
• • eine Pumpstrahlung 13 transportierende Schicht, hier die Glasplatte 46,
• • wobei die Pumpstrahlungsquellen eine Pumpstrahlung 13 mit der Pumpstrahlungswellenlänge λ_pmp in eine diese Pumpstrahlung transportierende Schicht, hier die Glasplatte 46, die Pumpstrahlung 13 von der Seite über eine Kante der Glasplatte 46 einspeisen,
• • eine Diffusor-Schicht 69, die eine weitere, eine Pumpstrahlung 13 lenkende, optische Schicht ist,
• • wobei die Diffusor-Schicht 69 auf der mindestens einen Pumpstrahlung 13 ausstrahlenden Seite über dem Pumpstrahlung 13 ausstrahlenden Bereich flächigen Pumpstrahlungsquelle angeordnet ist, worin die Pumpstrahlung 13 lenkende, optische Schicht vorzugsweise Pumpstrahlung 13 aus einer Richtung weglenkt, die vorzugsweise im Wesentlichen rechtwinklig zur Fläche der Pumpstrahlung 13 ausstrahlenden Seite der punktförmigen oder flächigen Pumpstrahlungsquelle (insbesondere der LEDs 44) verläuft

The flat area lighting system thus preferably comprises

• • Pump radiation sources, here for example in the form of LEDs 44,
• • a layer transporting pump radiation 13, here the glass plate 46,
• • where the pump radiation sources feed a pump radiation 13 with the pump radiation wavelength λ _pmp into a layer transporting this pump radiation, here the glass plate 46, the pump radiation 13 from the side over an edge of the glass plate 46,
• • a diffuser layer 69, which is a further optical layer that directs a pump radiation 13,
• • wherein the diffuser layer 69 is arranged on the side emitting at least one pump radiation 13 above the region of the flat pump radiation source emitting pump radiation 13, wherein the optical layer directing pump radiation 13 preferably deflects pump radiation 13 away from a direction which is preferably substantially perpendicular to the surface of the Pump radiation 13 emitting side of the point-shaped or flat pump radiation source (in particular the LEDs 44).

The diffuser layer 69 thus preferably directs the pump radiation 13 in the glass plate 46 onto the layer 11 preferably located on the diffuser layer 69 with the paramagnetic centers, which then emit fluorescent radiation 14. The diffuser layer 69 can also be achieved by matting and/or structuring the first surface 67 of the glass plate 46. The second surface 68 of the glass plate 46 can also have a diffuser layer 69. For example, by varying the roughness of the surface of the glass plate 46, it can be achieved that a locally different proportion of the pump radiation 13 in the glass plate 46 is coupled out of the glass plate 46 and into the layer 11. For example, the surface of the glass plate can be structured in such a way that a larger proportion of the pump radiation 13 is coupled out of the glass plate 46 into the layer 11 with the paramagnetic centers at a greater distance from the pump radiation sources (LEDs 44). In this way, it can be achieved that, in the case of a homogeneous external magnetic field with a homogeneous magnetic flux density, the intensity of the fluorescent radiation 14 generated at points on the surface of the layer 11 essentially no longer depends on the distance to the pump radiation sources, here the LEDs 44.
The flat pump radiation source constructed in this way consisting of LEDs 44 and glass plate 46 and optional diffuser layer 69 or diffuser surface structure of the glass plate 46 then irradiates the paramagnetic centers of the layer 11 with pump radiation 13 with the pump radiation wavelength λ _pmp . The layer 11 preferably comprises crystals 66, particularly preferably micro- or nanocrystals 66, with these paramagnetic centers, which are preferably NV centers in diamond crystals. The glass plate 46 preferably forms the flat surface 16 of the lower housing part 41 of the housing 8. The glass plate 46 also has the function of the carrier material II 12.

Figure 41

41 shows the underside of the circuit board (PCB) 43 of the magnetic field camera head 21 according to 29 to 40 . 41 corresponds in particular to that 40 , whereby the layer 11 of the sensor layer 5 is now covered with a carrier material I 9 as a reflective layer 10.

Figure 42

42 shows a section through a magnetic field camera head 21 according to 29 to 41 . 42 largely corresponds to this 32 , but now only the sectional surface is shown and the section is now guided through the LEDs 44. The sensor head also includes the 42 the second heat sink 49 to cool the circuit board (PCB) 43 of the magnetic field camera head 21 and to dissipate the waste heat from the LEDs 44. The upper part of the fluorescence camera with the evaluation electronics 15 is missing for better clarity. A competent person can provide these details, for example 32 removed and added here so that the upper part of the fluorescence camera in the figure, even if not explicitly shown, is still considered disclosed.

In the 42 Two adhesive points with adhesive 48 are shown, with which the circuit board (PCB) 43 of the magnetic field camera head 21 with the LEDs 44 and the other electronic components (59, 60, 61) is attached to the lower housing part 41 of the housing 8.

When operating in the horizontal direction, the LEDs 44 radiate pump radiation 13 into the glass plate 46. The glass plate 46 serves as a waveguide for the pump radiation 13 of the pump radiation sources, for example the LEDs 44, with pump radiation wavelength λ _pmp . The glass plate 46 distributes the pump radiation 13 from the LEDs 44 over an area. A portion of the pump radiation 13 transported in the glass plate 46 emerges from the glass plate 46 in the vertical direction upwards and downwards.

The pump radiation 13 from the LEDs 44, which emerges downwards from the glass plate 46, hits the sensor layer 5, here the layer 11 with the crystals and/or with the nanocrystals 66 with paramagnetic centers. The paramagnetic centers are preferably NV centers. The paramagnetic centers of layer 11 emit pump radiation 13 as a result of the irradiation with pump radiation wavelength λ _pmp Fluorescence radiation 14 of the fluorescence wavelength λ _fl . Typically in NV centers the pump radiation 13 is green and the fluorescence radiation 14 is red.

A reflective layer 10 preferably reflects the pump radiation 13, which is transmitted by the layer 11 and is not reflected and not absorbed, back in the direction of the light sensor array 1. The reflected pump radiation 13 passes through the layer 11 with the paramagnetic centers a second time and calls there the emission of fluorescent radiation 14 a second time. This further increases the signal contrast of the local magnetic field-dependent intensity of the local fluorescent radiation 14.

The reflective layer 10 preferably also reflects the portion of the fluorescent radiation 14 that is emitted downwards from the layer 11 back towards the light sensor array 1. The reflected fluorescent radiation 14 passes through the layer 11 with the paramagnetic centers a second time.

The layer 11 thus emits a first portion of the fluorescent radiation 14 directly in the direction of the light sensor array 1 and transmits a second portion of the fluorescent radiation 14, which was reflected on the reflective layer 10, at least partially typically also in the direction of the light sensor array 1. This also raises the Signal contrast of the local magnetic field-dependent intensity of the local fluorescence radiation 14 of the paramagnetic centers of the layer 11 continues.

In the example of the 42 For example, an optional dichroic mirrored layer 47 prevents the pump radiation 13 of the LEDs 44 with pump radiation wavelength λ _pmp from escaping from the glass plate 46 in the direction of the light sensor array 1. This means that this optional dichroic mirrored layer 47 can take on the role of the optical filter (long pass) 6 and this substitute.

In the example of the 42 For example, the optional dichroic mirrored layer 47 enables the transmission of the fluorescence radiation 14 of the paramagnetic centers of the layer 11 with fluorescence radiation wavelength λ _fl through the glass plate 46 in the direction of the light sensor array 1. Ie this optional dichroic mirrored layer 47 can also play the role of the optical filter (long pass ) 6 take over and replace it.

Therefore, the optional dichroic mirrored layer 47 is typically essentially not transparent to electromagnetic radiation, for example pump radiation 13, with pump radiation wavelength λ _pmp and is preferably essentially reflective.

Here, “essentially not transparent” means that the intensity of the remaining transmitted electromagnetic radiation, for example pump radiation 13, with pump radiation wavelength λ _pmp is so low that the remaining transmitted electromagnetic radiation with pump radiation wavelength λ _pmp achieves the intended purpose in the respective Application preferably not affected.

Here, “substantially reflected” means that the intensity of the non-reflected electromagnetic radiation with pump radiation wavelength λ _pmp is so low that the remaining reflected electromagnetic radiation with pump radiation wavelength λ _pmp is preferably sufficient to achieve the intended purpose in the respective application.

In the example of the 42 The combination of the LEDs 44 with the glass plate 46 forms an example of a flat pump radiation source for irradiating the paramagnetic centers of the crystals and/or nanocrystals 66 of the layer 11 of the sensor layer 5 with pump radiation 13 of the pump radiation wavelength λ _pmp .

The document presented here thus discloses a surface pump radiation source, which includes one or more primary pump radiation sources, here the LEDs 44, and an optical functional element, here the glass plate 46 for the surface distribution of the pump radiation 13 of the primary pump radiation sources, here the LEDs 44.

In a preferred variant, this areal pump radiation source irradiates a layer 11 with crystals and/or nanocrystals 66 with paramagnetic centers, here the layer 11, with pump radiation 13 of the pump radiation wavelength λ _pmp .

In a further variant, this layer 11 then emits fluorescent radiation 14 with a fluorescent radiation wavelength λ _fl , possibly locally differently depending on the value of the local amount of the magnetic flux density.

In a further variant, an optical functional element, for example the dichroic mirrored optional layer 47 and/or the optical filter (long pass) 6, separates the electromagnetic radiation with the pump radiation wavelength λ _pmp from the electromagnetic radiation with the fluorescence radiation wavelength λ _fl . In this further variant, the optical functional element, for example the dichroic mirrored optional layer 47 and/or the optical filter (long pass) 6, separates the pump radiation 13 with the pump radiation wavelength λ _pmp from the fluorescence radiation 14 with the fluorescence radiation wavelength λ _fl . This means that only electromagnetic radiation with the fluorescence radiation wavelength λ _fl or fluorescence radiation 14 with the fluorescence radiation wavelength λ _fl can reach the light sensor array 1.

For the same purpose, the housing 8 of the magnetic field camera head 21 is preferably designed to be light-tight.

The imaging optics 7 images the locally different intensity of the fluorescence radiation 14 of the paramagnetic centers of the layer 11 onto the light sensor array 1.

By means of the evaluation electronics 15, which are not shown but are hereby expressly disclosed, and the light sensor array 1, the magnetic field camera head 21 thus detects the locally different intensity of the fluorescence radiation 14 of the paramagnetic centers of the layer 11 and thus the locally different values of the amount of the magnetic flux density in the layer 11 form of an image.

The first heat sink 50 cools the evaluation electronics 13 of the fluorescence camera and the light sensor array 1 of the fluorescence camera and thus increases the signal-to-noise ratio of the light sensors of the light sensor array 1.

The second heat sink 49 cools the circuit board (PCB) 43 for the LEDs 44 and their energy supply 45. Here, the second heat sink 49 cools in particular the LEDs 44, which emit considerable heat, and thus prevents the housing (8, 40, 41) from heating up. and thus heating up the light sensor array 1. Also and increases the signal-to-noise ratio of the light sensors of the light sensor array 1.

In the magnetic field camera head 21 the 42 It is therefore largely a sensor head 21 corresponding to 29 to 41 .

Figure 43

43 shows a section through a magnetic field camera head 21 according to 29 to 42 . 43 largely corresponds to this 42 , whereby the cut is NOT guided through the LEDs 44. 42 corresponds largely to that 32 , but now only the cutting surface is shown. In the magnetic field camera head 21 the 43 It is therefore largely a magnetic field camera head 21 in accordance with 29 to 42 .

Figure 44

44 largely corresponds to this 23 , whereby the magnetic field camera head 21 is now the 44 additionally compared to the magnetic field camera head 21 33 the second heat sink 49. In the magnetic field camera head 21 the 44 It is therefore largely a magnetic field camera head 21 in accordance with 29 to 43 .

Figure 45

45 shows the fluorescence camera of a magnetic field camera head 21 according to 29 to 44 in connection with the first heat sink 50 as a sectional view. The fluorescence camera here includes, for example, the evaluation electronics 15, the camera housing 54, the light sensor array 1 and the imaging optics 7. If necessary, the fluorescence camera can also include the optical filter (long pass) 6 in the beam path of the imaging optics 7 and the light sensor array 1.

The first heat sink 50 is preferably thermally connected to the evaluation electronics 15 and/or the light sensor array 1 with a low thermal resistance. Particularly preferably, the first heat sink 50 is thermally connected to the light sensor array 1 with a low thermal resistance. As a result, the first heat sink 50 improves the signal-to-noise ratio of the light sensor array 1.

Figure 46

46 shows like that 45 the fluorescence camera of a magnetic field camera head 21 according to 29 to 45 in connection with the first heat sink 50, however, not as a sectional view.

Figure 47

47 shows the functional principle of the sensor layer 5, as it is in the device parts of the sensor head 29 to 46 in the 30 , 31 , 32 , 34 , 35 , 38 , 39 , 40 , 41 , 42 and 43 is used. The two light-emitting diodes (LEDs) 44 form the primary pump radiation sources for generating the pump radiation 13 with the pump radiation wavelength λ _pmp . The primary pump radiation sources in the form of the LEDs 44 radiate the pump radiation 13 from the side into the flat first optical functional element in the form of a glass plate 46. The pump radiation 13 spreads over an area from the feed point of the pump radiation 13 into the areal first optical functional element - here the glass plate 46 - whereby the intensity decreases continuously with the distance from the feed point of the pump radiation 13 into the areal first optical functional element - here the glass plate 46 . Part of the pump radiation 13 leaves the first optical functional element (glass plate 46) in the direction of a first surface 67 and passes into the layer 11. The layer 11 preferably comprises a plurality of crystals and/or nanocrystals 66, which preferably comprise paramagnetic centers. The crystals and nanocrystals 66 are preferably embedded in a carrier material of layer 11 that is transparent to electromagnetic radiation with the pump radiation wavelength λ _pmp . The crystals and nanocrystals 66 are preferably embedded in a carrier material of layer 11 that is transparent to electromagnetic radiation with the fluorescent radiation wavelength λ _fl .

The crystals and nanocrystals 66 are preferably embedded in a carrier material of layer 11 that is transparent to pump radiation with the pump radiation wavelength λ _pmp . The crystals and nanocrystals 66 are preferably embedded in a carrier material of layer 11 that is transparent to fluorescent radiation with the fluorescent radiation wavelength λ _fl .

Part of the pump radiation 13 in layer 11 irradiates paramagnetic centers of crystals and nanocrystals 66 in layer 11. Due to the irradiation with pump radiation 13 of the pump radiation wavelength λ _pmp , paramagnetic centers of crystals and nanocrystals 66 in layer 11 emit fluorescent radiation 14.

A mirror coating 10 reflects the part of the fluorescent radiation 14 that leaves the layer 11 not in the direction of the light sensor array 1, but in the opposite direction back into the layer 11.

The mirror coating 10 reflects the part of the pump radiation 13 that leaves the layer 11 not in the direction of the light sensor array 1, but in the opposite direction back into the layer 11.

In the example of the 47 the mirror coating 10 is covered with an optional carrier material I 9. Typically, the carrier material I 9 is a partial device of the lower housing part 41 of the housing 8 of the magnetic field camera.

Figure 49

The 48 shows schematically simplified the functional principle of the sensor layer 5, as it is in the device parts of the sensor head 29 to 46 in the 30 , 31 , 32 , 34 , 35 , 38 , 39 , 40 , 41 , 42 and 43 can be used. Essentially the same 48 the 47 , wherein a dichroic mirrored optional layer 47 is applied to the second surface 68 of the first optical functional element (glass plate 46).

The optional dichroic mirrored layer 47 is preferably essentially transparent to electromagnetic radiation with the fluorescent radiation wavelength λ _fl .

The optional dichroic mirrored layer 47 is preferably essentially NOT transparent to electromagnetic radiation with the pump radiation wavelength λ _pmp .

The optional dichroic mirrored layer 47 is preferably essentially transparent to fluorescent radiation 14 with the fluorescent radiation wavelength λ _fl .

The optional dichroic mirrored layer 47 is preferably essentially NOT transparent to pump radiation 13 with the pump radiation wavelength λ _pmp .

The optional dichroic mirrored layer 47 preferably reflects pump radiation 13 with the pump radiation wavelength λ _pmp , which emerges from the first optical functional element (glass plate 46) via the second surface 68 of the first optical functional element (glass plate 46), back into the first optical functional element (glass plate 46 ) back in. As a result, the paramagnetic centers in the crystals and/or nanocrystals 66 of the layer 11 are exposed to a maximum intensity of the pump radiation 13. This further improves the signal-to-noise ratio.

Figure 49

49 shows the system of 7 with a magnetic field sensor head 29 to 48 .

The LEDs 44 emit pump radiation 13 with a pump radiation wavelength λ _ρmp . The sensor layer 5 preferably corresponds to the structure of 48 . The sensor layer 5 is preferably applied to a mechanical support, for example a flat surface 16. The flat surface 16 is preferably part of the housing wall of the housing 8, not shown here. The material of this flat surface 16 or the housing wall of the housing 8 in this area is preferably non-magnetic and preferably does not essentially influence the magnetic field. The sensor layer 5 preferably comprises a large number of randomly and preferably uniformly oriented crystals and/or nanocrystals 66 with paramagnetic centers. When using diamond as a crystal material, the paramagnetic centers can be, for example, NV centers and/or SiV centers and/or TiV centers and/or GeV centers and/or SnV centers and/or NiN4 centers and /or PbV centers and/or ST1 centers act. When using NV centers in diamond as crystals and/or nanocrystals 66 of the sensor layer 5, the pump radiation 13 preferably has a pump radiation wavelength λ _pmp in a wavelength range of 400 nm to 700 nm wavelength and/or better 450 nm to 650 nm and/or better have 500 nm to 550 nm and/or better 515 nm to 540 nm. A wavelength of 532 nm is clearly preferred as the pump radiation wavelength λ _pmp . In the case of using NV centers in diamond or in diamonds of the sensor layer 5, a laser diode from Osram of the type PLT5 520B is suitable, for example as an LED 44 with a 520 nm pump radiation wavelength λ _pmp . When using NV centers in diamond crystals in the sensor layer 5 as paramagnetic centers of the sensor layer 5, the NV centers of the sensor layer 5 typically emit fluorescence radiation 14 _with a typical fluorescence wavelength λ _fl of approx 637nm at NV centers. An imaging optics 7 preferably captures the fluorescence image of the location-dependent fluorescence intensity of the fluorescence radiation 14 with the fluorescence wavelength λ _fl , which the sensor layer 5 generates by means of the paramagnetic centers in the sensor layer 5. An optical longpass filter 6 and/or a dichroic mirrored optional layer 47 in the sensor layer 5 preferably allows electromagnetic radiation with the fluorescence wavelength λ _fl and thus the fluorescence radiation 14 to pass. The optical long-pass filter 6 and/or a dichroic mirrored optional layer 47 in the sensor layer 5 preferably block the passage of electromagnetic radiation with the pump radiation wavelength λ _pmp and thus the passage of the pump radiation 13. This allows the imaging optics 7 to display the fluorescence image of the sensor layer 5 in Record the wavelength range of the fluorescence wavelength λ _fl and image it on the nxm light sensors of the nxm light sensor array 1 of the fluorescence camera. Since the intensity of the fluorescence radiation 14 of the sensor layer 5 depends locally in the sensor layer 5 on the magnetic flux density B at the location of the respective paramagnetic center in the sensor layer 5, the fluorescence image of the sensor layer 5 corresponds to a magnetic flux density image of the magnetic flux density field that flows through the sensor layer 5. Since, as a rule, the density distribution of the paramagnetic centers in the sensor layer 5 and/or the illumination of the sensor layer 5 with pump radiation 13 and/or the detection of the fluorescence intensity of the fluorescence radiation 14 over the surface of the sensor layer 5 are not completely homogeneous despite all efforts, it has proven by calibration measurements calibrate the system before first use. To process the measured values of the light sensors of the light sensor array 1, evaluation electronics 15 of the light sensor array 1 record the measured values of the signals of the light sensors of the light sensor array 1 and form the output signals 31 of the light sensors of the light sensor array 1, in particular by amplification and/or filtering. The processing circuit 30 for the output signals 31 The light sensors of the light sensor array 1 preferably controls the auxiliary magnets 19 by means of a control device 35 for the electromagnets of the auxiliary magnets 19, if these do not only include permanent magnets. The processing circuit 30 for the output signals 31 of the light sensors of the light sensor array 1 generates, for example, a fluorescence image and/or, for example, possibly also an improved fluorescence image, as described above, from the output signals 31 of the light sensors of the light sensor array 1. Due to the relationships presented above, the fluorescence image and/or, for example, possibly also the improved fluorescence image represent a magnetic flux density image of the magnetic flux density field in the sensor layer 5 or an improved magnetic flux density image of the magnetic flux density field in the sensor layer 5. The processing circuit 30 for the output signals 31 of the light sensors of the light sensor array 1 transmits this fluorescence image or the improved fluorescence image, preferably by means of the interface circuit 36 via a data bus 29, to a computer system 28 for operating the magnetic field camera head 21. The computer system 28 for operating the sensor head 21 preferably generates one from this fluorescence image or from the improved fluorescence image one- or two- or three-dimensional representation of the distribution of the magnetic flux density in the sensor layer 5 and displays this on the screen 32. The data bus 29 serves to establish the data connection between the processing circuit 30 for the output signals 31 of the light sensors of the light sensor array 1 and the computer system 28 for operating the magnetic field camera head 21. The measurement object, here for example a ferromagnetic material 17 with defects 18, generates the variations of the magnetic flux density B in the sensor layer 5, which lead to the said magnetic flux density absolute images of the magnetic flux density field in the sensor layer 5 or the improved magnetic flux density absolute images of the magnetic flux density field in the sensor layer 5.

Figure 50

50 largely corresponds to that 47 , which shows the functional principle of the sensor layer 5 as it is in the device parts of the sensor head 29 to 46 in the 30 , 31 , 32 , 34 , 35 , 38 , 39 , 40 , 41 , 42 and 43 is used. The 50 differs from that 47 through a diffuser layer 69.

Unfortunately, the intensity distribution of the intensity of the pump radiation 13 emerging from this opposite glass plate surface of the glass plate 46 at a point on the surface of the glass plate 46 is dependent on the inverse square distance of this point on the surface of the glass plate 46 from the LED 44 in question. This distance dependence can be compensated for by a diffuser structure in a diffuser layer 69 on this facing glass plate surface of the glass plate 46. The glass plate 46 is therefore preferably provided on the surface facing away from the light sensor array 1 with a diffuser structure in a diffuser layer 69, which ensures homogeneous illumination of the layer 11 and thus of the paramagnetic centers contained in the layer 11 with pump radiation 13 ensured by the LEDs 44.

This system consisting of a glass plate 46, the LEDs 44, which radiate pump radiation 13 from the edges of the glass plate 46 into the material of the glass plate 46, the diffuser layer 69 and the layer 11 with the paramagnetic centers, is ultimately a flat area lighting system , with: a) a flat pump radiation source (44, 46) for pump radiation 13 with the pump radiation wavelength λ _pmp , which has a substrate and at least one region formed on the substrate (glass wafer 46), which is essentially not pixelated and emits pump radiation 13, the pump radiation 13 radiates in every direction from at least one side of the flat pump radiation source emitting pump radiation 13 (downward-facing surface of the glass plate 46); and b) an optical layer directing pump radiation 13 - for example the glass plate 46 - which is arranged on the side (edge of the glass plate 46) emitting at least one pump radiation 13 above the area of a point-shaped or flat pump radiation source (exemplary LEDs 44) emitting pump radiation 13 , in which the optical layer that directs pump radiation 13 - in particular the glass plate 46 - preferably deflects pump radiation 13 from a direction that is perpendicular to the surface of the pump radiation 13 (light propagation plane of the pump radiation 13 in the glass plate 46) emitting side of the flat or point-shaped pump radiation source (46, 44) runs.

In one embodiment of the flat surface lighting system, the optical layer (glass plate 46) that directs pump radiation 13 has a structured first surface (underside of the glass plate 46), the side emitting the pump radiation 13 is arranged adjacent to the point-shaped or flat pump radiation source (LEDs 44).

In one embodiment of the flat surface lighting system, the pump radiation 13-directing optical layer (glass plate 46) has a flat first surface, which is arranged at right angles opposite the pump radiation 13 emitting side of the point-shaped or planar pump radiation source (LEDs 44).

In one embodiment of the flat surface lighting system, the pump radiation 13-directing optical layer (glass plate 46) has a flat first surface which is arranged opposite the pump radiation 13 emitting side of the flat pump radiation source (LEDs 44).

In one embodiment of the flat surface lighting system, the structured first surface of the optical layer (glass plate 46) directing the pump radiation 13 has triangular prisms or a diffuser layer 69 applied to the first surface of the pump radiation 13 (glass plate 46), for example as a diffuser .

In one embodiment of the flat surface lighting system, the structured surface has, for example, cylindrical lenses or other optical and/or micro-optical functional elements.

In one embodiment of the flat area lighting system, the structured surface has a plurality of wedge-shaped structures that have a long axis, the axes of the wedge-shaped structures then preferably being aligned in a common direction.

In one embodiment of the flat area lighting system, a flat pump radiation source includes OLEDs or VCSELs as LEDs 44.

In one embodiment of the flat surface lighting system, the pump radiation 13-directing optical layer (glass plate 46) has a flat first surface, which is arranged opposite the pump radiation 13 emitting side of the point-shaped or planar pump radiation source (LEDs 44), with preference being given to the planar pump radiation sources (LEDs). 44) OLEDs or VCSELs as LEDs 44 include.

In one embodiment of the flat surface lighting system, the flat surface lighting system comprises a diffuser in a diffuser layer 69, which is arranged between the optical layer directing pump radiation 13 and the flat pump radiation source.

In one embodiment of the flat area lighting system, the area lighting system comprises a second optical layer directing pump radiation 13, which is arranged above the optical layer directing pump radiation 13 and parallel to the optical layer directing pump radiation 13.

In one embodiment of the flat surface lighting system, for example, the optical layer directing pump radiation 13 is divided into a plurality of areas and structures directing pump radiation 13 are aligned in one area at an angle that differs from the angle of light-directing structures in a second area.

The layer 11 with the paramagnetic centers is preferably located on the surface of the flat surface lighting system, for example on the surface of a diffuser layer 69 of a diffuser, which is preferably again located on a surface of said glass plate 46.

• • Pumpstrahlungsquellen, hier beispielhaft in Form der LEDs 44,
• • eine Pumpstrahlung 13 transportierende Schicht, hier die Glasplatte 46,
• • wobei die Pumpstrahlungsquellen eine Pumpstrahlung 13 mit der Pumpstrahlungswellenlänge λ_pmp in eine diese Pumpstrahlung transportierende Schicht, hier die Glasplatte 46, die Pumpstrahlung 13 von der Seite über eine Kante der Glasplatte 46 einspeisen,
• • eine Diffusor-Schicht 69, die eine weitere, eine Pumpstrahlung 13 lenkende, optische Schicht ist,
• • wobei die Diffusor-Schicht 69 auf der mindestens einen Pumpstrahlung 13 ausstrahlenden Seite über dem Pumpstrahlung 13 ausstrahlenden Bereich flächigen Pumpstrahlungsquelle angeordnet ist, worin die Pumpstrahlung 13 lenkende, optische Schicht vorzugsweise Pumpstrahlung 13 aus einer Richtung weglenkt, die vorzugsweise im Wesentlichen rechtwinklig zur Fläche der Pumpstrahlung 13 ausstrahlenden Seite der punktförmigen oder flächigen Pumpstrahlungsquelle (insbesondere der LEDs 44) verläuft

The flat area lighting system thus preferably comprises

• • Pump radiation sources, here for example in the form of LEDs 44,
• • a layer transporting pump radiation 13, here the glass plate 46,
• • where the pump radiation sources feed a pump radiation 13 with the pump radiation wavelength λ _pmp into a layer transporting this pump radiation, here the glass plate 46, the pump radiation 13 from the side over an edge of the glass plate 46,
• • a diffuser layer 69, which is a further optical layer that directs a pump radiation 13,
• • wherein the diffuser layer 69 is arranged on the side emitting at least one pump radiation 13 above the region of the flat pump radiation source emitting pump radiation 13, wherein the optical layer directing pump radiation 13 preferably deflects pump radiation 13 away from a direction which is preferably substantially perpendicular to the surface of the Pump radiation 13 emitting side of the point-shaped or flat pump radiation source (in particular the LEDs 44).

The diffuser layer 69 thus preferably directs the pump radiation 13 in the glass plate 46 onto the layer 11 preferably located on the diffuser layer 69 with the paramagnetic centers, which then emit fluorescent radiation 14. The diffuser layer 69 can also be achieved by matting and/or structuring the first surface 67 of the glass plate 46. The second surface 68 of the glass plate 46 can also have a diffuser layer 69. For example, by varying the roughness of the surface of the glass plate 46, it can be achieved that a locally different proportion of the pump radiation 13 in the glass plate 46 is coupled out of the glass plate 46 and into the layer 11. For example, the surface of the glass plate can be structured in such a way that a larger proportion of the pump radiation 13 is coupled out of the glass plate 46 into the layer 11 with the paramagnetic centers at a greater distance from the pump radiation sources (LEDs 44). In this way, it can be achieved that, in the case of a homogeneous external magnetic field with a homogeneous magnetic flux density, the intensity of the fluorescent radiation 14 generated at points on the surface of the layer 11 essentially no longer depends on the distance to the pump radiation sources, here the LEDs 44.

The flat pump radiation source constructed in this way consisting of LEDs 44 and glass plate 46 and optional diffuser layer 69 or diffuser surface structure of the glass plate 46 then irradiates the paramagnetic centers of the layer 11 with pump radiation 13 with the pump radiation wavelength λ _pmp . The layer 11 preferably comprises crystals 66, particularly preferably micro- or nanocrystals 66, with these paramagnetic centers, which are preferably NV centers in diamond crystals. The glass plate 46 preferably forms the flat surface 16 of the lower housing part 41 of the housing 8. The glass plate 46 also has the function of the carrier material II 12.

Figure 51

51a shows the resonances of a single-crystalline diamond comprising NV centers. The 51a shows in diagram 501 the resonance lines of the proportion of the intensity I _is (t) of the fluorescence radiation FL of a diamond single crystal provided with NV centers, in which the proportion of the relative intensity signal of the intensity I _is (t) of the fluorescence radiation FL, which is the Microwave modulation frequency f _µw , is shown as a function of the microwave frequency ω _µW and the magnetic flux density B. The microwave frequency ω _µW is plotted on the X-axis of diagram 501. The magnetic flux density B is plotted on the Y axis of the diagram 501 in arbitrary units. In the example, a single diamond crystal in [111] is aligned with the direction of the magnetic flux density B of a magnetic field. The behavior shown in diagram 501 is known from the prior art.

The microwave frequency ω _µW of the microwave signal µW in the range from 2.4 GHz to 3.4 GHz is plotted on the X axis. The Y-axis shows the magnetic flux density B in arbitrary units. The intensity of the resonance is determined by the blackening of the corresponding area segment of the diagram 501 51a shown.

To record the values that correspond to diagram 501 of the 51a underlying, a microwave signal source µWG irradiates the diamond single crystal with microwave radiation of the microwave frequency ω _µW between 2.4 GHz and 3.4 GHz. At the same time, a light source LED irradiates the diamond single crystal with pump radiation LB of a pump radiation wavelength λ _pmp . An optical waveguide LWL preferably transports the pump radiation LB from the light source LED to the diamond single crystal with the NV centers. As a result of the irradiation with pump radiation LB, the diamond single crystal emits fluorescence radiation FL with an intensity I _ist (t). A light-sensitive component, hereinafter referred to as photodetector PD, detects this fluorescent radiation FL and generates a received signal S0. The evaluation device AWV, which will be explained further later, processes the received signal 50 and thus generates a measured value of the intensity component in the fluorescence radiation FL, the modulation frequency of which corresponds to the microwave modulation frequency f _µW of the microwave signal µW of the microwave signal source µWG. The evaluation device preferably comprises a first amplifier V1 and a multiple correlator LIV, which will be explained later. There is therefore preferably 100% amplitude modulation of the microwave signal µW by the microwave signal source µWG corresponding to a microwave modulation signal S5m. A second signal generator G2 generates this microwave modulation signal S5m. The microwave modulation signal S5m is preferably a PWM modulation signal with a duty cycle of preferably 50%. The evaluation device AWV preferably correlates the intensity signal of the intensity I _ist (t) of the fluorescent radiation FL in the received signal 50 with the microwave modulation signal S5m. The evaluation device AWV determines a value for the strength of the resonance. The document presented here states this value in the following resonance value. The NV centers of the diamond single crystal emit fluorescent radiation FL with an intensity I _is (t) when the microwave frequency ω _µW of the microwave signal µW is not in resonance with the NV centers of the diamond single crystal. The dark fields in the diagram 501 of the 51a thus represent combination of strengths of the magnetic flux density B and the microwave frequency ω _µW of the microwave signal µW, in which the intensity of the fluorescence radiation FL emitted by the NV centers of the diamond single crystal is reduced. When the microwave frequency ω _µW of the microwave signal µW resonates with the resonance frequency of the NV centers of the diamond single crystal, a signal component occurs in the intensity signal of the received signal 50 which has the microwave modulation frequency f _µW of the microwave radiation µW of the microwave signal source µWG. This portion is missing if there is no resonance of the microwave modulation frequency f _µW of the microwave radiation µW of the microwave signal source µWG with the resonance frequency of the NV centers of the diamond single crystal. The NV center each has an axis in the diamond single crystal. The document presented here hereinafter refers to this axis as the NV axis. The left resonance line 502 for the spin quantum number m _s =-1 and the rightmost resonance line 505 for the spin quantum number m _s =+1 mean that the magnetic flux density vector B is aligned in the direction of the NV axis [111]. .

The resonance line 502 represents a spin quantum number m _s =-1. The resonance line 505 represents a spin quantum number m _s =+1. The resonance lines 3 and 4 come from the superposition of the other three possible orientations of the NV axes of NV centers of the diamond single crystal. These other three possible orientations of the NV axes are also perpendicular to the vector of the magnetic flux density B. The effective B field of the microwave radiation of the microwave signal µW of the microwave signal source µWG must always be perpendicular to the NV axis of the respective NV center to be effective. If this is not the case, only the portion of the B field of the microwave radiation of the microwave signal µW of the microwave signal source µWG, which is perpendicular to the NV axis of the respective NV center for effectiveness, influences the intensity I _is (t) of the fluorescent radiation FL of the relevant NV center. Thus, for these other three possible orientations of the NV axes, the effective magnetic flux density B is smaller than for the resonance lines 502 and 505. For a measurement to generate the diagram 501 according to 51a The crystal preferably lies with the surface with normal vector [111] on the line that transports the microwave modulation signal S5m from the microwave signal source µWG to the diamond single crystal. The normal vector [111] is the vector perpendicular to the surface of the diamond crystal in question, which is parallel to the NV axis of at least part of the NV centers.

• Diese Methode kann auch genutzt werden, um ein unbekanntes Mikrowellensignal S_ωnk zu analysieren. Hierfür kann eine Vorrichtung ein einkristallines Diamantplättchen mit NV-Zentren in ein magnetisches Feld mit einem Gradienten der magnetischen Flussdichte B einbringen. Vorzugsweise umfasst die Vorrichtung dann einen Mischer. Dieser Mischer mischt das unbekannte Mikrowellensignal mit einem Trägersignal. Bevorzugt ist das Trägersignal das Mikrowellensignal µW der Mikrowellensignalquelle µWG. Die betreffende Vorrichtung führt vorzugsweise dann das so gemischte Mikrowellensignal den NV-Zentren über eine Tri-Plate-Leitung 1330 zu.

The following insight now goes beyond the state of the art:

• This method can also be used to analyze an unknown microwave signal S _ωnk . For this purpose, a device can introduce a single-crystalline diamond plate with NV centers into a magnetic field with a gradient of the magnetic flux density B. The device then preferably comprises a mixer. This mixer mixes the unknown microwave signal with a carrier signal. The carrier signal is preferably the microwave signal µW from the microwave signal source µWG. The device in question then preferably supplies the thus mixed microwave signal to the NV centers via a tri-plate line 1330.

The NV centers, which are in resonance, then exhibit the modulation corresponding to the microwave modulation signal S5m of the microwave signal source µWG which then generates the carrier signal modulated with the microwave modulation signal S5m before mixing by the mixer of the device. The device can then use the resonance lines (502, 503, 504, 505) that appear to determine the unknown microwave frequency of the unknown microwave signal.

Figure 51b

51b shows the transition from 51a to 51b . This corresponds to a transition from a single-crystalline to a multicrystalline fluorescence substrate. In 51b The LED light source irradiates a variety of diamond nanocrystals ND. Instead of the diamond nanocrystals ND, it can also be a variety of other diamond crystals with NV centers and/or a variety of crystals with paramagnetic centers with comparable properties. In this respect, the diamond nanocrystals ND are only an example here. An expert can easily get the relevant technical apprenticeship gen by replacing the term diamond nanocrystals ND with the term diamonds. The term diamond nanocrystal ND refers to the optimal embodiment based on current knowledge, but expressly includes less optimal embodiments such as diamond itself, also in the sense of the technical teaching of the document presented here. In the example, the diamond nanocrystals ND 51b a different orientation in space. Due to the statistically uniformly distributed different orientation of the diamond nanocrystals ND, the diamond nanocrystals ND do not show the resonance image of 51a . The same applies when using other suitable small crystals with suitable functionally equivalent paramagnetic centers that are stochastically equally distributed and aligned differently in space. The resonance lines (502, 503, 504, 505) of the 51 expand due to the number of diamond nanocrystals ND and their uniformly distributed stochastic orientation in space. The diamond nanocrystals ND are preferably present as diamond powder or crystal powder. At least some of the diamonds are preferably HDNV diamonds according to the state of the art. For this purpose, the document presented here refers, for example, to Scripture DE 10 2021 132 148 A1 .

51b shows the resonances of a variety of diamonds comprising NV centers oriented in space. The 51b shows in diagram 2 the resonances of the proportion of the intensity I _is (t) of the fluorescence radiation FL of the large number of diamonds provided with NV centers, in which the proportion of the intensity signal of the fluorescence radiation FL, which has the microwave modulation frequency f _µW , as a function of the microwave frequency ω _µW and the magnetic flux density B is shown. The microwave frequency ω _µW is plotted on the X-axis of diagram 501. The magnetic flux density B is plotted on the Y axis of the diagram 520 in arbitrary units. In the example, a large number of diamond crystals that are oriented differently in space are oriented differently and typically equally distributed with respect to the direction of the magnetic flux density B of a magnetic field.

Due to the stochastically uniformly distributed orientation of the diamond nanocrystals ND, the resonance lines (502, 503, 504, 505) of the diagram 501 expand 51a on. Instead of resonance lines (502, 503, 504, 505), the diagram has 520 51b now resonance subfields (526, 527, 528).

A first resonance subfield is the lower resonance field 528. If the effective magnetic flux density B of the magnetic field exceeds a limit value B _off of the amount of the effective magnetic flux density B of the magnetic field, the lower resonance field 528 splits into a lower resonance subfield 522 and an upper resonance subfield 525. Between the lower resonance subfield 522 and the upper resonance subfield 525, an average resonance minimum 529 is formed at an amount of the effective magnetic flux density B above the limit value B _off of the amount of the effective magnetic flux density B of the magnetic field.

The lower resonance edge 522 limits the lower resonance field 528 to lower microwave frequencies and to smaller magnetic flux densities B. The upper resonance edge 25 limits the lower resonance subfield 528 to higher microwave frequencies ω _µW and to smaller effective magnetic flux densities B. An effective offset flux density B _off limits the lower resonance field 528 towards higher effective magnetic flux densities B. The middle resonance minimum 529 does not share the lower resonance field 528.

A second resonance subfield is the lower resonance subfield 526. The lower resonance edge 522 limits the lower resonance subfield 526 to lower microwave frequencies ω _μW and to lower effective magnetic flux densities B. The lower middle resonance edge 523 limits the lower resonance subfield 526 towards higher microwave frequencies ω _µW and towards lower effective magnetic flux densities B. An offset flux density B _off further limits the lower resonance subfield 526 towards smaller effective magnetic flux densities B.

A third resonance subfield is the upper resonance subfield 527. The upper resonance edge 525 limits the upper resonance subfield 527 to lower microwave frequencies ω _μW and to higher effective magnetic flux densities B. The upper middle resonance edge 524 limits the upper resonance subfield 527 to higher microwave frequencies ω _µW and to higher effective magnetic flux densities B. An effective offset flux density B _off further limits the upper resonance subfield 527 to smaller effective magnetic flux densities B.

A part of the diamond nano-crystals ND, which have the same orientation as the diamond single crystal 51a have, creates the lower resonance edge 522. These diamond nano-crystals ND have one Resonance line 502 for the spin quantum number m _s =-1. These diamond nanocrystals ND are aligned in the [111] direction with respect to the effective magnetic flux density B of the magnetic field. The NV centers of this part of the diamond nanocrystals ND interacting at this resonance line are aligned in the [111] direction of the respective diamond nanocrystal ND. The B component of the microwave field of the microwave signal µW is aligned perpendicular to the effective magnetic flux density B of the magnetic field. The lower resonance edge 522 thus corresponds to the spin quantum number m _s =-1;

A part of the diamond nano-crystals ND, which have the same orientation as the diamond single crystal 51a have, creates the upper resonance edge 525. These diamond nano-crystals ND have a resonance line 505 for the spin quantum number m _s =+1. These diamond nanocrystals ND are aligned in the [111] direction with respect to the effective magnetic flux density B of the magnetic field. The NV centers of this part of the diamond nanocrystals ND interacting at this resonance line are aligned in the [111] direction of the respective diamond nanocrystal ND. The B component of the microwave field of the microwave signal µW is aligned perpendicular to the effective magnetic flux density B of the magnetic field. The upper resonance edge 525 thus corresponds to the spin quantum number m _s =+1;

Surprisingly, the average resonance minimum 529 does not share a distance parallel to the x-axis in the diagram 20 between the lower resonance edge 522 and the upper resonance edge 525 in a ratio of 50:50 above the effective offset flux density B _off . At the effective offset flux density B _off, the average resonance minimum 529 divides a distance parallel to the x-axis in the diagram 520 between the lower resonance edge 522 and the upper resonance edge 525 in a ratio of 50:50. The line of the mean resonance minimum 529 then swings non-linearly to the right. This means that the ratio of the distances can be used as a measure for the magnetic flux density B.

Figure 51c

51c explains the determination of an unknown effective magnetic flux density B _nk based on 51b by means of a variation of the microwave frequency ω _µW in the region of interest and by means of a simultaneous determination of that proportion of the intensity of the fluorescence radiation FL of the multitude of diamond nanocrystals ND provided with NV centers, in which this proportion of the intensity signal of the fluorescence radiation FL is the microwave modulation frequency f _µW , depending on this microwave frequency ω _µW in the region of interest. The diagram 520 of the 51c corresponds to that of 51b , with prominent points in the diagram 520 now additionally marked using reference lines and reference symbols for better clarity.

The unknown effective flux density B _nk is the part of the unknown total flux density B _Σ whose vectorial component is perpendicular to the magnetic B field components of the microwave field of the microwave signal µW of the microwave signal source µWG. As will be explained in more detail below, this part depends significantly on the positioning of the sensor element SE, which preferably comprises the plurality of diamond nanocrystals ND and typically in carrier material TM, relative to the signal conductor 1330 and the non-conductive left isolation gap 1440 and to non-conductive right insulation gap 1450 of the exemplary triplate line 1480. When the sensor element SE is positioned in the non-conductive left insulation gap 1440 and/or in the non-conductive right insulation gap 1450, the unknown effective flux density B _nk corresponds to the proportion of the unknown flux density B that is parallel to the plane of the carrier substrate 1360 of the exemplary triplate Line 1480 is. When the sensor element SE is positioned on and/or below the signal conductor 1330 of the exemplary triplate line 1480, the unknown effective flux density B _nk corresponds to the proportion of the unknown flux density B that is in the direction of the waveguide 2380 or perpendicular to the plane of the carrier substrate 1360 of the exemplary triplate -Line is 1480. If the sensor element SE has both a positioning of the sensor element SE in the non-conductive, left insulation gap 1440 and/or in the non-conductive right insulation gap 1450 as well as a positioning of the sensor element SE on and/or under the signal conductor 1330 of the exemplary triplate Line 1480 at least partially has, it usually shows a mixture of these sensitivities. This may be intentional under certain circumstances.

The document presented here suggests that the proposed device for determining the unknown effective magnetic flux density B _nk scans the microwave frequency ω _µW in the region of interest and produces an associated measured value for the proportion of the intensity for a large number of measuring points with different microwave frequencies ω _µW the fluorescence radiation FL of the multitude of diamond nanocrystals ND provided with NV centers, in which the proportion of the intensity signal of the fluorescence radiation FL has the microwave modulation frequency f _µW .

The proposed device can then determine the lower microwave frequency ω _µW22 of the lower resonance edge 522 from these associated measured values for the proportion of the intensity I _is (t) of the fluorescence radiation FL of the multitude of diamond nanocrystals ND provided with NV centers. A first calibration table and/or the first parameters of a first calibration function are preferably stored in a memory (RAM, ROM, Flash) (RAM, NVM) of the device, with the help of which the device can calculate the value of the lower microwave frequency ω _µW22 from the determined value Can determine the amount of the lower effective magnetic flux density B ₂₂ .

The proposed device can also determine the upper microwave frequency ω _µW25 of the upper resonance edge 525 from the associated measured values for the proportion of the intensity I _ist (t) of the fluorescence radiation FL of the multitude of diamond nanocrystals ND provided with NV centers. A second calibration table and/or the second parameters of a second calibration function are preferably stored in a memory (RAM, ROM, Flash) (RAM, NVM) of the device, with the help of which the device can calculate the value of the upper microwave frequency ω _µW25 from the determined value Can determine the amount of the upper effective magnetic flux density B ₂₅ .

From the associated measured values for the proportion of the intensity of the fluorescence radiation FL of the multitude of diamond nanocrystals ND provided with NV centers, the proposed device can also determine the presence of the mean resonance minimum 529 and the resonance minimum microwave frequency ω _µW29 of the mean resonance minimum 529 determine. Preferably, a third calibration table and/or the third parameters of a third calibration function are stored in a memory (RAM, ROM, Flash) (RAM, NVM) of the device, with the help of which the device can use the determined value of the resonance minimum microwave frequency ω _µW29 of the average Resonance minimum 529 can determine the value of the amount of the effective magnetic resonance minimum flux density B ₂₉ .

The drop in the amount of the measured values for the proportion of the intensity I _is (t) of the fluorescence radiation FL of the multitude of diamond nanocrystals ND provided with NV centers from the lower resonance subfield 526 to the middle resonance minimum 529 occurs at a constant effective magnetic flux density B and when increasing the microwave frequency ω _µW when the lower average microwave frequency ω _µW23 is exceeded, so that the device can detect a lower average resonance edge 523 when the effective magnetic flux density B is above that of the effective offset flux density B _off . Preferably, a fourth calibration table and/or the fourth parameters of a fourth calibration function are stored in a memory (RAM, ROM, Flash) (RAM, NVM) of the device, with the help of which the device can be used from the determined value of the lower mean microwave frequency ω _µW23 of the lower middle resonance edge 523 can determine the value of the amount of the lower average effective magnetic flux density B ₂₃ .

The increase in the amount of the measured values for the proportion of the intensity I _is (t) of the fluorescence radiation FL of the large number of diamond nanocrystals ND provided with NV centers from the middle resonance minimum 529 to the upper resonance subfield 527 occurs at a constant effective magnetic flux density B and with a further increase in the microwave frequency ω _µW when the upper average microwave frequency ω _µW24 is exceeded, so that the device can detect an upper average resonance edge 524 when the effective magnetic flux density B is above that of the effective offset flux density B _off . Preferably, a fifth calibration table and/or the fifth parameters of a fifth calibration function are stored in a memory (RAM, ROM, Flash) (RAM, NVM) of the device, with the help of which the device can use the determined value of the upper mean microwave frequency ω _µW24 of the upper middle resonance edge 524 can determine the value of the amount of the upper average effective magnetic flux density B ₂₄ .

• • untere Mikrowellenfrequenz ω_µW22,
• • untere mittlere Mikrowellenfrequenz ω_µW23,
• • obere mittlere Mikrowellenfrequenz ω_µW24,
• • obere Mikrowellenfrequenz ω_µW25,
• • Resonanzminimum-Mikrowellenfrequenz ω_µW29 bestimmen.

With an unknown effective magnetic flux density B _nk , the device can thus produce one or more of the measured values by varying the microwave frequency ω _µW

• • lower microwave frequency ω _µW22 ,
• • lower mean microwave frequency ω _µW23 ,
• • upper mean microwave frequency ω _µW24 ,
• • upper microwave frequency ω _µW25 ,
• • Determine the resonance minimum microwave frequency ω _µW29 .

• • untere Mikrowellenfrequenz ω_µW22,
• • untere mittlere Mikrowellenfrequenz ω_µW23,
• • obere mittlere Mikrowellenfrequenz ω_µW24,
• • obere Mikrowellenfrequenz ω_µW25,
• • Resonanzminimum-Mikrowellenfrequenz ω_µW29

einen oder mehreren der zugehörigen Messwerte

• • untere wirksame magnetische Flussdichte B₂₂,
• • obere wirksame magnetische Flussdichte B₂₅,
• • wirksame magnetische Resonanzminimum-Flussdichte B₂₉,
• • untere mittlere wirksame magnetische Flussdichte B₂₃,
• • obere mittlere wirksame magnetische Flussdichte B₂₄

bestimmen. Diese sollten in der Regel der unbekannten wirksamen magnetischen Flussdichte B_nk entsprechen. Beispielsweise kann die Vorrichtung durch Mittelung über zwei oder mehrere Werte (B₂₂, B₂₃, B₂₄, B₂₅, B₂₉) den Messwert einer gemittelten mittleren wirksamen Flussdichte B_g errechnen.With an unknown effective magnetic flux density B _nk, the device can use these microwave frequencies (ω _µW22 , ω _µW23 , ω _µW24 , ω _µW25 , ω _µW29 ) by varying the microwave frequency ω _µW and with the help of one or more of the measured values

• • lower microwave frequency ω _µW22 ,
• • lower mean microwave frequency ω _µW23 ,
• • upper mean microwave frequency ω _µW24 ,
• • upper microwave frequency ω _µW25,
• • Resonance minimum microwave frequency ω _µW29

one or more of the associated measured values

• • lower effective magnetic flux density B ₂₂ ,
• • upper effective magnetic flux density B ₂₅ ,
• • effective magnetic resonance minimum flux density B ₂₉ ,
• • lower average effective magnetic flux density B ₂₃ ,
• • upper average effective magnetic flux density B ₂₄

determine. These should generally correspond to the unknown effective magnetic flux density B _nk . For example, the device can calculate the measured value of an averaged mean effective flux density B _g by averaging two or more values (B ₂₂ , B ₂₃ , B ₂₄ , B ₂₅ , B ₂₉ ).

Figure 51d

51d explains the determination of an unknown microwave frequency ω _µWnk . based on the 51b .

By varying the effective magnetic reference flux density B _ref in the region of interest and by simultaneously determining that portion of the intensity of the fluorescence radiation FL of the multitude of diamond nanocrystals ND provided with NV centers in which this portion of the intensity signal of the fluorescence radiation FL has the microwave modulation frequency f _µW , depending on this effective magnetic reference flux density B _ref in the region of interest. The diagram 520 of the 51d corresponds to that of 51b , with prominent points in the diagram 520 now additionally marked using reference lines and reference symbols for better clarity.

The linear extrapolation of the lower resonance edge 522 and the upper resonance edge 525 typically intersect at a point of the tip 530 of the V-formation (522, 525) with the zero-point flux density Bo and the zero-point microwave frequency ω _µW0 .

The device preferably determines the zero-point flux density _Bo and the zero-point microwave frequency ω _µW0 of the tip 530 of the V-formation (522, 525) or functionally equivalent information before the intended use of the device and/or in an initialization process during commissioning by changing the magnetic reference flux density B ref the proposed device.

If present, the proposed device compensates for the zero-point flux density B ₀ using optional magnetic field compensation means (LCTR, DRLV, Lc, SIS, MS). For example, these magnetic field compensation means (LCTR, DRLV, Lc, SIS, MS) can include a magnetic field controller LCTR, which controls the magnetic field generating means Lc and the driver stage DRVL for supplying the magnetic field generating means Lc. For example, the proposed device can therefore have means for generating an additional, superimposed magnetic flux density B _ad . These means for generating an additional, superimposed magnetic flux density B _ad can include said magnetic field generating means Lc.

These means for generating an additional, superimposed magnetic flux density B _ad can comprise a permanent magnet PM or a gradient-affected permanent magnet GPM. These means for generating an additional, superimposed magnetic flux density B _ad can include a positioning device PV, which positions the permanent magnet PM or the gradient-affected permanent magnet GPM relative to the sensor element SE. The control device CTR then preferably controls the positioning device PV of the permanent magnet PM via a data bus DB or the gradient-affected permanent magnet GPM and thus the positioning of the permanent magnet PM or the gradient-affected permanent magnet GPM relative to the sensor element SE. This allows the control device CTR to influence the additional magnetic flux density B _ad that flows through the sensor element SE. The control device CTR preferably controls the positioning of the permanent magnet PM or the gradient-affected permanent magnet GPM relative to the sensor element SE and influencing the additional magnetic flux density B _ad that flows through the sensor element SE, depending on one or more measured values of a magnetic flux density.

A first of these measured values of such a magnetic flux density can, for example, be a measured value of a magnetic field sensor MS, which the control device CTR detects by means of the magnetic field sensor MS and possibly a magnetic field sensor control SIS, for example via a data bus DB.

A second of these measured values of such a magnetic flux density can, for example, be a measured value that the control device CTR detects using the sensor element SE and its fluorescence radiation FL and other device parts described here.

The effective magnetic flux density B _w is then composed of the effective external magnetic flux density B _extw and the effective additional flux density B _adw . (B _w =B _extw +B _adw ) In this case, the device can tune the effective magnetic flux density B _w by changing the additional magnetic flux density B _ad .

The effective additional flux density B _adw is the proportion of the additional flux density B _ad that is perpendicular to the vector of the magnetic flux density B _µW of the microwave radiation of the microwave signal µW.

The effective magnetic flux density B _w is the portion of the total flux density B _Σ that is perpendicular to the vector of the magnetic flux density B _µW of the microwave radiation of the microwave signal µW.

The effective external magnetic flux density B _extw is the proportion of the external magnetic flux density B _ext that is perpendicular to the vector of the magnetic flux density B _µW of the microwave radiation of the microwave signal µW. The external magnetic flux density B _ext acts on the sensor element SE, preferably from outside the device.

To determine an unknown microwave frequency ω _µWnk, the device can, for example, change the effective magnetic reference flux density B _ref by changing the additional effective magnetic flux density B _adw . As a result, the operating point of the sensor element SE moves along line 541.

To determine an unknown microwave frequency ω _µWnk, the device can, for example, mix a microwave signal µW with the microwave frequency ω _µW . This results in microwave signal components with a mixed microwave frequency of ω _µWmix+ =ω _µWnk +ω _µW and ω _µWmix- =ω _µWnk +ω _µW within the sensor element SE. As a result, the operating point of the sensor element SE moves along the line 543. The unknown microwave frequency ω _µWnk is preferably greater in magnitude than the frequency distance between the intersection 542 of the line 543 with the lower resonance edge 522 from the intersection 545 of the line 543 with the upper resonance edge 525.

It is therefore advantageous if the device increases the additional magnetic flux density B _ad during the measurement in order to push the operating point of the measurement from bottom to top. The operating point is typically determined by the mixed microwave frequencies of ω _µWmix+ =ω _µWnk +ω _µW and ω _µWmix+ =ω _µWnk -ω _µW and by the effective magnetic flux density B _w (B _w =B _extw +B _adw ).

The proposed device can therefore determine the position of the lower resonance edge 522 and the upper resonance edge 525 and/or the tip by interpolation from the at an unknown effective microwave frequency ω _µWnk by varying the microwave frequency ω _µW and/or by varying the effective additional magnetic flux density B _adw 530 of the V formation (522, 525) and, if necessary, determine the positions of the lower middle resonance edge 523 and/or the upper middle resonance edge 524 and/or the position of the middle resonance minimum 529 and, for example, from this the position of the zero point flux density B ₀ and/or the zero point microwave frequency ω _µW0 . From this, the device can access the effective external magnetic flux density B _extw and/or the unknown microwave frequency ω _µWnk close. For this purpose, the control device CTR preferably controls the microwave signal source μWG and the magnetic field generating means Lc with its control device LCTR, typically via the data bus DB.

Figure 52a

52a shows the resonances of a large number of diamonds with NV centers oriented differently in space. The 52a shows in diagram 550 the amplitude of the portion of the intensity of the fluorescence radiation FL of the large number of diamonds provided with NV centers, in which the portion of the intensity signal of the fluorescence radiation FL, which has the microwave modulation frequency fw, as a function of the microwave frequency ω _µW and at constant effective magnetic flux density B _w is shown. The magnetic flux density B corresponds to the value 0.0 on the Y-axis of the diagram 520 51b . The microwave frequency ω _µW is plotted on the X-axis of diagram 550. The amplitude of the portion of the intensity I _is (t) of the fluorescence radiation FL of the plurality of diamonds provided with NV centers, in which the portion of the intensity signal of the fluorescence radiation FL, which has the microwave modulation frequency f _µW , is in the Y axis of the Diagram 550 is plotted in arbitrary units (English: “arbitrary units” or abbreviated “au”). In the example, a large number of diamond crystals that are differently oriented in space are aligned differently and typically in the same distribution with respect to the direction of the magnetic flux density B of a magnetic field.

In the 52a For orientation, the lower resonance edge 522 and the upper resonance edge 525 and the middle resonance minimum 529 are provided with reference numbers.

Figure 52b

The 52b equals to 52a , whereby different reference lines (561, 562, 563) are now drawn for measurement. One problem is the noise background, which the control device CTR must suppress, for example by means of a computer-implemented noise suppression method.

Preferably, the control device CTR sets the upper reference line 561 so that the value 564 of the magnetic flux density B ₆₁ associated with the upper reference line 561 is maximum and the upper reference line 561 is crossed by the detected curve at least once and no more than four times .

Preferably, the control device CTR sets the lower reference line 562 so that the value 565 of the magnetic flux density B ₆₂ associated with the lower reference line 562 is minimal and the lower reference line 562 is crossed by the detected curve at least twice and no more than four times.

The control device CTR of the proposed device then preferably selects the middle reference line 563 so that the difference of the value 566 of the magnetic flux density B ₆₃ , which is assigned to the middle reference line 563, minus the value 565 of the magnetic flux density B ₆₂ , which is the lower reference line 562 is assigned _{, a} factor An exemplary value for the factor X can be 80% to 50% or 75% or 70% etc. The document presented here proposes, depending on the application, to optimize this factor

The lower resonance edge 522 is assigned the lower microwave frequency ω _µW22 .

The upper resonance edge 525 is assigned the upper microwave frequency ω _µW25 .

The resonance minimum microwave frequency ω _µW29 is assigned to the mean resonance minimum 529.

Figure 52c

52c shows the resonances of a variety of diamonds comprising NV centers oriented in space. The 52c shows in diagram 570 the amplitude of the portion of the intensity of the fluorescence radiation FL of the large number of diamonds provided with NV centers, in which the portion of the intensity signal of the fluorescence radiation FL, which has the microwave modulation frequency f _µW , depends on the microwave frequency ω _µW and at constant effective magnetic flux density B _w is shown. The magnetic flux density B corresponds approximately to the value 0.003 on the Y-axis of diagram 520 51b . The microwave frequency ω _µW is plotted on the X-axis of diagram 570. The amplitude of the portion of the intensity of the fluorescent radiation FL of the plurality of diamonds provided with NV centers, in which the portion of the intensity signal of the fluorescent radiation FL, which has the microwave modulation frequency f _µW , is in the Y-axis of the diagram 570 in arbitrary units applied (English: “arbitrary units” or abbreviated “au”). In the example, a large number of diamond crystals that are differently oriented in space are aligned differently and typically in the same distribution with respect to the direction of the magnetic flux density B of a magnetic field.

In the 52c For orientation purposes, the lower resonance edge 522 and the upper resonance edge 525 and the lower middle resonance edge 523 and the upper middle resonance edge 524 and the middle resonance minimum 529 are provided with reference numbers.

Figure 52d

The 52d equals to 52c , whereby the various reference lines (561, 562, 563) for measurement are now drawn again. One problem is the noise background that the control device CTR has to suppress.

Preferably, the control device CTR sets the upper reference line 561 so that the value 564 of the magnetic flux density B ₆₁ associated with the upper reference line 561 is maximum and the upper reference line 561 is crossed by the detected curve at least once and no more than four times .

Preferably, the control device CTR sets the lower reference line 562 so that the value 565 of the magnetic flux density B ₆₂ associated with the lower reference line 562 is minimal and the lower reference line 562 is crossed by the detected curve at least twice and no more than four times.

The control device CTR of the proposed device then preferably selects the middle reference line 563 so that the difference of the value 566 of the magnetic flux density B ₆₃ , which is assigned to the middle reference line 563, minus the value 565 of the magnetic flux density B ₆₂ , which is the lower reference line 562 is assigned _{, a} factor An exemplary value for the factor X can be 80% to 50% or 75% or 70% etc. The document presented here proposes, depending on the application, to optimize this factor

The lower resonance edge 522 is assigned the lower microwave frequency ω _µW22 .

The lower middle resonance edge 523 is assigned the lower middle microwave frequency ω _µW23 .

The upper middle resonance edge 524 is assigned the upper middle microwave frequency ω _µW24 .

The upper resonance edge 525 is assigned the upper microwave frequency ω _µW25 .

The resonance minimum microwave frequency ω _µW29 is assigned to the mean resonance minimum 529.

In addition, the slope 567 of the curve is shown. This can only be measured from a certain magnetic flux density B.

Figure 53a

53a shows the resonances of a large number of diamonds with NV centers oriented differently in space. The 53a shows in diagram 590 the amplitude of the portion of the intensity of the fluorescence radiation FL of the large number of diamonds provided with NV centers, in which the portion of the intensity signal of the fluorescence radiation FL, which has the microwave modulation frequency f _µW , depends on the microwave frequency ω _µW and at constant effective magnetic flux density B _w is shown. The magnetic flux density B corresponds approximately to the value 0.07 on the Y-axis of the diagram 520 51b . The microwave frequency ω _µW is plotted on the X-axis of diagram 590. The amplitude of the portion of the intensity I _is (t) of the fluorescence radiation FL of the plurality of diamonds provided with NV centers, in which the portion of the intensity signal of the fluorescence radiation FL, which has the microwave modulation frequency f _µW , is in the Y axis of the Diagram 590 plotted in arbitrary units (English: “arbitrary units” or abbreviated “au”). In the example, a large number of diamond crystals that are differently oriented in space are aligned differently and typically in the same distribution with respect to the direction of the magnetic flux density B of a magnetic field.

In the 53a For orientation purposes, the lower resonance edge 522 and the upper resonance edge 525 and the lower middle resonance edge 523 and the upper middle resonance edge 524 and the middle resonance minimum 529 are provided with reference numbers.

Figure 53b

The 53b equals to 53a , whereby the various reference lines (561, 562, 563) for measurement are now drawn again. One problem is the noise background that the control device CTR has to suppress.

Preferably, the control device CTR sets the upper reference line 561 so that the value 564 of the magnetic flux density B ₆₁ associated with the upper reference line 561 is maximum and the upper reference line 561 is crossed by the detected curve at least once and no more than four times .

Preferably, the control device CTR sets the lower reference line 562 so that the value 565 of the magnetic flux density B ₆₂ associated with the lower reference line 562 is minimal and the lower reference line 562 is crossed by the detected curve at least twice and no more than four times.

The proposed device then preferably selects the middle reference line 563 such that the difference of the value 566 of the magnetic flux density B ₆₃ , which is assigned to the middle reference line 563, minus the value 565 of the magnetic flux density B ₆₂ , which is assigned to the lower reference line 562, corresponds to _{a factor} An exemplary value for the factor X can be 80% to 50% or 75% or 70% etc. The document presented here proposes, depending on the application, to optimize this factor

The lower resonance edge 522 is assigned the lower microwave frequency ω _µW22 .

The lower middle resonance edge 523 is assigned the lower middle microwave frequency ω _µW23 .

The upper middle resonance edge 524 is assigned the upper middle microwave frequency ω _µW24 .

The upper resonance edge 525 is assigned the upper microwave frequency ω _µW25 .

The resonance minimum microwave frequency ω _µW29 is assigned to the mean resonance minimum 529.

In addition, the slope 567 of the curve is shown.

Preferably, the control device CTR of the device determines the slope 567 of the curve in the central regions of the curve firstly between the lower resonance edge 522 and the lower middle resonance edge 523 and secondly between the upper middle resonance edge 524 and the upper resonance edge 525. Preferably the control device uses CTR of the device does not use the areas of the curve near the lower resonance edge 522 and near the lower middle resonance edge 523 and near the upper middle resonance edge 524 and near the upper resonance edge 25 for determining the slope 567 of the curve. Therefore, the control device CTR can be the device As a rule, the slope 567 of the curve is only determined from a certain minimum flux density B of the magnetic flux density B.

Figure 53c

53c shows the resonances of a variety of diamonds comprising NV centers oriented in space. The 53c shows in diagram 610 the amplitude of the portion of the intensity of the fluorescence radiation FL of the large number of diamonds provided with NV centers, in which the portion of the intensity signal of the fluorescence radiation FL, which has the microwave modulation frequency f _µW , depends on the microwave frequency ω _µW and is shown at constant effective magnetic flux density B _w . The magnetic flux density B corresponds approximately to the value 0.124 on the Y-axis of diagram 520 51b . The microwave frequency ω _µW is plotted on the X-axis of diagram 610. The amplitude of the portion of the intensity I _is (t) of the fluorescence radiation FL of the plurality of diamonds provided with NV centers, in which the portion of the intensity signal of the fluorescence radiation FL, which has the microwave modulation frequency f _µW , is in the Y axis of the Diagram 610 is plotted in arbitrary units (English: “arbitrary units” or abbreviated “au”). In the example, a large number of diamond crystals that are differently oriented in space are aligned differently and typically in the same distribution with respect to the direction of the magnetic flux density B of a magnetic field.

In the 53c For orientation purposes, the lower resonance edge 522 and the upper resonance edge 525 and the lower middle resonance edge 523 and the upper middle resonance edge 524 and the middle resonance minimum 529 are provided with reference numbers.

Figure 53d

The 53d equals to 53c , whereby the various reference lines (561, 562, 563) for measurement are now drawn again. One problem is the noise background that the control device CTR has to suppress.

Preferably, the control device CTR sets the upper reference line 561 so that the value 564 of the magnetic flux density B ₆₁ associated with the upper reference line 561 is maximum and the upper reference line 561 is crossed by the detected curve at least once and no more than four times .

Preferably, the control device CTR sets the lower reference line 562 so that the value 565 of the magnetic flux density B ₆₂ associated with the lower reference line 562 is minimal and the lower reference line 562 is crossed by the detected curve at least twice and no more than four times.

The proposed device then preferably selects the middle reference line 563 such that the difference of the value 566 of the magnetic flux density B ₆₁ , which is assigned to the middle reference line 563, minus the value 565 of the magnetic flux density B ₆₂ , which is assigned to the lower reference line 562, corresponds to _{a factor} An exemplary value for the factor X can be 80% to 50% or 75% or 70% etc. The document presented here proposes, depending on the application, to optimize this factor

The lower resonance edge 522 is assigned the lower microwave frequency ω _µW22 .

The lower middle resonance edge 523 is assigned the lower middle microwave frequency ω _µW23 .

The upper middle resonance edge 524 is assigned the upper middle microwave frequency ω _µW24 .

The upper resonance edge 525 is assigned the upper microwave frequency ω _µW25 .

The resonance minimum microwave frequency ω _µW29 is assigned to the mean resonance minimum 529.

In addition, the slope 567 of the curve is shown.

Preferably, the control device CTR of the device determines the slope 567 of the curve in the central regions of the curve firstly between the lower resonance edge 522 and the lower middle resonance edge 523 and secondly between the upper middle resonance edge 524 and the upper resonance edge 525. Preferably the control device uses CTR of the device does not use the areas of the curve near the lower resonance edge 522 and near the lower middle resonance edge 523 and near the upper middle resonance edge 524 and near the upper resonance edge 525 for determining the slope 567 of the curve. Therefore, the control device CTR of the device can generally only determine the slope 567 of the curve from a certain minimum flux density B of the magnetic flux density B.

In addition, a polynomial approximation 627 of the curve is entered, which can typically be described using a polynomial with polynomial coefficients.

Figure 54

54 shows a single microstrip line 1380 as an example of a microstrip line.

The document presented here refers, as an example, to the book R.K. Hoffmann “Integrated Microwave Circuits: Electrical Basics, Dimensioning, Technical Implementation, Technologies” Springer; 1st Edition (June 1, 1983), ISBN-10: 3540123520, ISBN-13: 978-3540123521.

Various microstrip lines are listed there. The combination of the technical teaching presented in this document with a microstrip line of any design is covered by the disclosure presented here.

The exemplary single microstrip line 1380 of 54 comprises a preferably not or only slightly electrically conductive or dielectric or semiconductive carrier substrate 1360, an electrically conductive back contact 1370 on the underside of the electrically non-conductive carrier substrate 1360, an electrically conductive signal line 1330 on the top of the electrically non-conductive carrier substrate 1360. The carrier substrate 1360 can, for example, be an insulating layer in the metallization stack of a micro-integrated circuit, in particular a micro-integrated semiconductor circuit, in particular a CMOS or BiCMOS or bipolar circuit or a circuit based on III/V materials or a dielectric layer. For example, the carrier substrate 1360) can be made of materials such as FR-4 (Flame Resistant-4) or PTFE (Polytetrafluoroethylene) or of semiconducting materials, such as pieces of semiconductor wafers, for example pieces of CMOS wafers or, for example, pieces of BiCMOS wafers, for example pieces of wafers from a bipolar technology or pieces of a wafer made of a III / V material or the like and / or, for example, pieces of MEMS wafers and / or, for example, pieces of MEOS wafers (MEOS = micro electro optical system) and / or, for example, pieces of MOEMS wafers etc. and/or pieces of MOEMS wafers include microelectronic circuits and functional elements and/or micro-optical functional elements and/or micromechanical functional elements and/or microfluidic functional elements. The individual microstrip line 1380 may optionally also be covered with an insulating layer, which would make it an embedded microstrip line. In view of the brevity of the technical teaching presented here, we have refrained from presenting this variant here. However, it is covered by the disclosure of the document presented here. In the exemplary single microstrip line 1380 the 54 An electrically essentially non-conductive left insulation surface 1340 separates the electrically conductive signal line 1330 from other circuit parts on the carrier substrate 1360. In addition, an electrically essentially non-conductive right insulation surface 1350 also separates the electrically conductive signal line 1330 from other circuit parts on the carrier substrate 1360. Preferably, the individual microstrip line 1380 has a characteristic impedance based on the electrically conductive signal line 1330 as the “hot” inner conductor and the electrically conductive back contact 1370 as the ground electrode, which preferably matches the output characteristic impedance of the microwave signal source μWG.

According to the proposal, it was recognized that the placement and size of the sensor element SE relative to the electrically conductive signal line 1330 are crucial for the directional sensitivity of the fluorescence radiation FL of the NV centers in the diamond nanocrystals ND of the sensor element SE with respect to the direction of an external magnetic flux density B _ext is.

When placing the sensor element SE on or above the electrically conductive signal line 1330 (see following 65 .) is the vector of the magnetic flux density of the microwave field of the microwave signal µW, which the microwave signal source µWG feeds into the signal line 1330, essentially parallel to the surface of the electrically non-conductive carrier substrate 1360 and transverse to the direction of the signal line 1330 in the area of the sensor element SE. As a result, the fluorescence radiation FL of the NV centers in the diamond nanocrystals ND of the sensor element SE is essentially sensitive to the effective portion Bw of the external magnetic flux density B _ext , the flux density vector of which is perpendicular to the surface of the electrically non-conductive carrier substrate 1360 within the sensor element SE and/or its flux density vector is parallel to the signal line 1360.

When placing the sensor element SE directly next to the electrically conductive signal line 1330 (see also the following 64 and the following 66 .) is the vector 1440 of the magnetic flux density of the microwave field of the microwave signal µW, which the microwave signal source µWG feeds into the signal line 1330, essentially perpendicular to the surface of the electrically non-conductive carrier substrate 1360 within the sensor element SE. As a result, the fluorescence radiation FL of the NV centers in the diamond nanocrystals ND of the sensor element SE is essentially sensitive to the effective portion Bw of the external magnetic flux density B _ext , the flux density vector of which is parallel to the surface of the electrically non-conductive carrier substrate 1360 within the sensor element SE is.

1. a. die Positionierung des Sensorelements SE relativ zur elektrisch leitende Signalleitung 1330 eine Einstellung einer Vorzugsrichtung der Empfindlichkeit ermöglicht,
   1. i. wenn der Durchmesser d_SE des Sensorelements SE um nicht mehr als 50%, besser nicht mehr als 25%, noch besser nicht mehr als 10%, noch besser nicht mehr als 5%, besser nicht mehr als 2%, noch besser nicht mehr als 1% die Breite ds der elektrisch leitenden Signalleitung 1330 überschreitet oder
   2. ii. wenn besonders bevorzugt der der Durchmesser d_SE des Sensorelements SE die Breite ds der elektrisch leitenden Signalleitung 1330 um mehr als 1%, besser mehr als 2%, besser mehr als 5%, besser mehr als 10%, besser mehr als 25%, besser mehr als 50%, besser mehr als 75% unterschreitet.
2. b. die Positionierung des Sensorelements SE relativ zur elektrisch leitende Signalleitung 1330 eine unbeabsichtigte Einstellung einer Vorzugsrichtung der Empfindlichkeit unterdrückt,
   1. i. wenn der Durchmesser d_SE des Sensorelements SE um mehr als 1%, besser mehr als 2%, noch besser mehr als 5%, noch besser mehr als 10%, noch besser mehr als 25%, noch besser mehr als 50%, noch besser mehr als 75%, noch besser mehr als 100% die Breite ds der elektrisch leitenden Signalleitung 1330 überschreitet

The elaboration of the proposal for the technical teaching of the document presented here resulted in the following as an essential idea of the technical teaching presented here:

1. a. the positioning of the sensor element SE relative to the electrically conductive signal line 1330 enables a preferred direction of sensitivity to be set,
   1. i. if the diameter d _SE of the sensor element SE is not more than 50%, better not more than 25%, even better not more than 10%, even better not more than 5%, better not more than 2%, even better not more than 1% exceeds the width ds of the electrically conductive signal line 1330 or
   2. ii. if particularly preferably the diameter d _SE of the sensor element SE the width ds of the electrically conductive signal line 1330 by more than 1%, better more than 2%, better than 5%, better more than 10%, better than 25%, better more than 50%, better than 75%.
2. b. the positioning of the sensor element SE relative to the electrically conductive signal line 1330 suppresses an unintentional setting of a preferred direction of sensitivity,
   1. i. if the diameter d _SE of the sensor element SE is more than 1%, better more than 2%, even better more than 5%, even better more than 10%, even better more than 25%, even better more than 50%, even better more than 75%, even better more than 100%, exceeds the width ds of the electrically conductive signal line 1330

The technical teaching of the document presented here has therefore recognized that the diameter d _SE of the sensor element SE relative to the width ds of the electrically conductive signal line 1330 and the positioning of the sensor element SE relative to the electrically conductive signal line 1330 of a single microstrip line 1380 the directional sensitivity of the intensity of the microwave-dependent Fluorescence radiation FL of the NV centers in the diamond nanocrystals ND of the sensor element SE compared to the effective proportion Bw of the external magnetic flux density B _ext , based on the orientation of the flux density vector within the sensor element SE relative to the surface of the electrically non-conductive carrier substrate 1360, is predictable can be adjusted and that at the same time the choice of these parameters (position SE and d _s ) determines the extent to which this directional dependence is expressed. This directional dependence can also be completely suppressed. (See also the following 67 .)

The left sensor element 1410 is shown as a sensor element SE to the left of the electrically conductive signal line 1330.

In the example of the 54 For example, the diameter d _SE of the sensor element SE is comparable to the width d _s of the electrically conductive signal line 1330. For better clarity, the direction of the vector 1440 of the magnetic flux density of the microwave field of the microwave signal µW, which the microwave signal source µWG feeds into the signal line 1330, is in the 54 shown in the area of the sensor element SE. The fluorescence radiation FL of the NV centers in the diamond nanocrystals ND of the sensor element SE (1410) is essentially sensitive to the effective portion Bw of the external magnetic flux density B _ext , the flux density vector of which is parallel to the surface of the electrically non-conductive carrier substrate 1360 within of the sensor element SE. The sensor element SE (1410) includes a carrier germaterial TM in which the diamond nanocrystals ND with the NV centers are typically embedded within the sensor element SE.

The middle sensor element 1420 is shown as a sensor element SE on the electrically conductive signal line 1310.

In the example of the 54 For example, the diameter d _SE of the sensor element SE is comparable to the width d _s of the electrically conductive signal line 1330. For better clarity, the direction of the vector 1450 of the magnetic flux density of the microwave field of the microwave signal µW, which the microwave signal source µWG feeds into the signal line 1330, is in the 54 shown in the area of the sensor element SE. The fluorescence radiation FL of the NV centers in the diamond nanocrystals ND of the middle sensor element SE (1420) is essentially sensitive to the effective portion Bw of the external magnetic flux density B _ext , the flux density vector of which is perpendicular to the surface of the electrically non-conductive carrier substrate 1360 within the sensor element SE and/or its flux density vector is parallel to the signal line 1360. The sensor element SE (1420) comprises a carrier material TM in which the diamond nanocrystals ND with the NV centers are typically embedded within the sensor element SE.

The right sensor element 1430 is shown as the sensor element SE to the right of the electrically conductive signal line 1330

In the example of the 54 For example, the diameter d _SE of the sensor element SE is comparable to the width d _s of the electrically conductive signal line 1330. For better clarity, the direction of the vector 1460 of the magnetic flux density of the microwave field of the microwave signal µW, which the microwave signal source µWG feeds into the signal line 1330, is in the 54 shown in the area of the sensor element SE. The fluorescence radiation FL of the NV centers in the diamond nanocrystals ND of the sensor element SE (1430) is essentially sensitive to the effective portion Bw of the external magnetic flux density B _ext , the flux density vector of which is parallel to the surface of the electrically non-conductive carrier substrate 1360 within of the sensor element SE. The sensor element SE (1430) comprises a carrier material TM in which the diamond nanocrystals ND with the NV centers are typically embedded within the sensor element SE.

In various versions, several of the sensor elements (1410, 1420, 1430) can be omitted in order to achieve directional sensitivity.

Figure 55

55 shows a single slot line 1880 as an example of a slot line.

The document presented here refers, as an example, to the book R.K. Hoffmann “Integrated Microwave Circuits: Electrical Basics, Dimensioning, Technical Implementation, Technologies” Springer; 1st Edition (June 1, 1983), ISBN-10: 3540123520, ISBN-13: 978-3540123521.

Various slotted cables are listed there. The combination of the technical teaching presented in this document with a microstrip line of any design is covered by the disclosure presented here.

The exemplary single slot line 1880 of the 55 comprises a preferably not or only slightly electrically conductive carrier substrate 1360, an electrically conductive back contact 1370 on the underside of the electrically non-conductive carrier substrate 1360, an electrically conductive left signal ground surface 1310 on the top of the electrically non-conductive carrier substrate 1360 and an electrically conductive right signal ground surface 1320 on the top of the electrically non-conductive carrier substrate 1360. The carrier substrate 1360 can, for example, be an insulating layer in the metallization stack of a micro-integrated circuit, in particular a micro-integrated semiconductor circuit, in particular a CMOS or BiCMOS or bipolar circuit or a circuit based on III/V materials or a dielectric carrier substrate 1360 like that. The electrically conductive left signal ground surface 1310 and the electrically conductive right signal ground surface 1320 may optionally also be covered with an insulating layer, which would make them an embedded slot line. In view of the brevity of the technical teaching presented here, we have refrained from presenting this variant here. However, it is covered by the disclosure of the document presented here. In the exemplary single slot line 1880 the 55 An electrically essentially non-conductive insulation surface 1840 - the slot - separates the electrically conductive left signal ground surface 1310 from the electrically conductive right signal ground surface 1320 on the carrier substrate 1360. Preferably, the individual slot line 1880 is referred to the slot 1840 as a “hot” inner conductor and The electrically conductive rear contact 1370 as a ground electrode has a characteristic impedance that preferably matches the output characteristic impedance of the microwave signal source µWG.

According to the proposal, it was recognized that the placement and size of the sensor element SE relative to the electrically conductive left signal ground surface 1310 and the electrically conductive right signal ground surface 1320 and to the slot 1840 are crucial for the directional sensitivity of the fluorescence radiation FL of the NV centers in the diamond nanocrystals ND of the sensor element SE with respect to the direction of an external magnetic flux density B is _ext .

When placing one or more sensor elements SE on or above the electrically conductive left signal ground surface 1310 and/or on or above the electrically conductive right signal ground surface 1320, the respective vector is the magnetic flux density of the microwave field of the microwave signal µW, which the microwave signal source µWG into the slot line 1880 feeds in, essentially parallel to the surface of the electrically non-conductive carrier substrate 1360 in the area of the respective sensor element SE. As a result, the fluorescence radiation FL of the NV centers in the diamond nanocrystals ND of the respective sensor element SE is essentially sensitive to the effective portion Bw of the external magnetic flux density B _ext , the flux density vector of which is perpendicular to the surface of the electrically non-conductive carrier substrate 1360 or its Flux density vector is parallel to the slot 1840 of the slot line 1880 within the respective sensor element SE.

When placing the sensor element SE directly within the slot_1840 of the slot line 1880 (see also the following 69 .) is the vector 1440 of the magnetic flux density of the microwave field of the microwave signal µW, which the microwave signal source µWG feeds into the slot line 1880, essentially perpendicular to the surface of the electrically non-conductive carrier substrate 1360 within the sensor element SE. As a result, the fluorescence radiation FL of the NV centers in the diamond nanocrystals ND of the sensor element SE is essentially sensitive to the effective portion Bw of the external magnetic flux density B _ext , the flux density vector of which is parallel to the surface of the electrically non-conductive carrier substrate 1360 within the sensor element SE is.

1. a. die Positionierung des Sensorelements SE relativ zum Schlitz 1840 der Schlitzleitung 1880 eine Einstellung einer Vorzugsrichtung der Empfindlichkeit ermöglicht,
   • iii. wenn der Durchmesser d_SE des Sensorelements SE um nicht mehr als 50%, besser nicht mehr als 25%, noch besser nicht mehr als 10%, noch besser nicht mehr als 5%, besser nicht mehr als 2%, noch besser nicht mehr als 1% die Breite d_SL des Schlitzes 1840 der Schlitzleitung 1880 überschreitet oder
   • iv. wenn besonders bevorzugt der der Durchmesser d_SE des Sensorelements SE die Breite d_SL des Schlitzes 1840 der Schlitzleitung 1880 um mehr als 1%, besser mehr als 2%, besser mehr als 5%, besser mehr als 10%, besser mehr als 25%, besser mehr als 50%, besser mehr als 75% unterschreitet.
2. b. die Positionierung des Sensorelements SE relativ zum Schlitz 1840 der Schlitzleitung 1880 eine unbeabsichtigte Einstellung einer Vorzugsrichtung der Empfindlichkeit unterdrückt,
   • ii. wenn der Durchmesser d_SE des Sensorelements SE um mehr als 1%, besser mehr als 2%, noch besser mehr als 5%, noch besser mehr als 10%, noch besser mehr als 25%, noch besser mehr als 50%, noch besser mehr als 75%, noch besser mehr als 100% die Breite d_SL des Schlitzes 1840 der Schlitzleitung 1880 überschreitet und
   • iii. wenn Sensorelements SE relativ zum Schlitz 1840 der Schlitzleitung 1880 vorzugsweise so positioniert ist, dass das Sensorelement SE die elektrisch leitende linke Signalmassefläche 1310 und die elektrisch leitende rechte Signalmassefläche 1320 (Siehe folgende 70 und 71.) bevorzugt in gleicher Weise mit überdeckt.

The elaboration of the proposal for the technical teaching of the document presented here resulted in the following as an essential idea of the technical teaching presented here:

1. a. the positioning of the sensor element SE relative to the slot 1840 of the slot line 1880 enables a preferred direction of sensitivity to be set,
   • iii. if the diameter d _SE of the sensor element SE is not more than 50%, better not more than 25%, even better not more than 10%, even better not more than 5%, better not more than 2%, even better not more than 1% exceeds the width d _SL of the slot 1840 of the slot line 1880 or
   • iv. if particularly preferred, the diameter d _SE of the sensor element SE the width d _SL of the slot 1840 of the slot line 1880 by more than 1%, better than 2%, better than 5%, better than 10%, better than 25% , better than 50%, better than 75%.
2. b. the positioning of the sensor element SE relative to the slot 1840 of the slot line 1880 suppresses an unintentional setting of a preferred direction of sensitivity,
   • ii. if the diameter d _SE of the sensor element SE is more than 1%, better more than 2%, even better more than 5%, even better more than 10%, even better more than 25%, even better more than 50%, even better more than 75%, even better more than 100%, exceeds the width d _SL of the slot 1840 of the slot line 1880 and
   • iii. when sensor element SE is preferably positioned relative to the slot 1840 of the slot line 1880 such that the sensor element SE covers the electrically conductive left signal ground surface 1310 and the electrically conductive right signal ground surface 1320 (see following 70 and 71 .) preferably covered in the same way.

The technical teaching of the document presented here has therefore recognized that the diameter d _SE of the sensor element SE relative to the width d _SL of the slot 1840 of the slot line 1880 and the positioning of the sensor element SE relative to the slot 1840 of the slot line 1880 determine the directional sensitivity of the intensity of the microwave-dependent fluorescent radiation FL of the NV centers in the diamond nano- Crystals ND of the sensor element SE compared to the effective proportion Bw of the external magnetic flux density B _ext , based on the orientation of the flux density vector within the sensor element SE relative to the surface of the electrically non-conductive carrier substrate 1360 can be predictably adjusted and that at the same time the choice of these parameters (position SE and d _SL ) determines the extent to which this directional dependence is expressed. This directional dependence can also be completely suppressed.

A middle sensor element 1420 is shown as a sensor element SE in the slot 1840 of the slot line 1880.

In the example of the 55 For example, the diameter d _SE of the middle sensor element SE (1420) is smaller than the width d _SL of the slot 1840 of the slot line 1880. For better clarity, the direction of the vector 1450 is the magnetic flux density of the microwave field of the microwave signal µW, which the microwave signal source µWG in the slot line 1880 feeds into the 55 shown in the area of the middle sensor element SE (1420). The fluorescence radiation FL of the NV centers in the diamond nanocrystals ND of the middle sensor element SE (1420) is essentially sensitive to the effective portion Bw of the external magnetic flux density B _ext , the flux density vector of which is parallel to the surface of the electrically non-conductive carrier substrate 1360 within the middle sensor element SE(1420). The middle sensor element SE (1420) comprises a carrier material TM in which the diamond nanocrystals ND with the NV centers are typically embedded within the sensor element SE.

A left sensor element 1410 is shown as a sensor element SE on the electrically conductive left signal ground surface 1310 of the exemplary slot line 1880.

In the example of the 70 For example, the diameter d _SE of the left sensor element SE (1410) is smaller than the width d _SL of the slot 1840 of the slot line 1880. For better clarity, the direction of the vector 1450 is the magnetic flux density of the microwave field of the microwave signal µW, which the microwave signal source µWG in the slot line 1880 feeds into the 55 shown in the area of the left sensor element SE. (We have chosen the reference number 1450 here because the sensitivity refers to portions of the magnetic flux density of the microwave field perpendicular to the surface of the carrier substrate 1370.) The fluorescence radiation FL of the NV centers in the diamond nanocrystals ND of the left sensor element SE(1420 ) is essentially sensitive to the effective portion Bw of the external magnetic flux density B _ext , whose flux density vector is perpendicular to the surface of the electrically non-conductive carrier substrate 1360 or whose flux density vector is parallel to the slot 1840 of the slot line 1880 within the left sensor element SE. The left sensor element SE (1420) comprises a carrier material TM in which the diamond nanocrystals ND with the NV centers are typically embedded within the sensor element SE.

A right sensor element 1430 is shown as a sensor element SE on the electrically conductive right signal ground surface 1320 of the exemplary slot line 1880.

In the example of the 55 For example, the diameter d _SE of the right sensor element SE is smaller than the width d _SL of the slot 1840 of the slot line 1880. For better clarity, the direction of the vector 1450 is the magnetic flux density of the microwave field of the microwave signal µW, which the microwave signal source µWG feeds into the slot line 1880 , in the 55 shown in the area of the right sensor element SE. The fluorescence radiation FL of the NV centers in the diamond nanocrystals ND of the sensor element SE (1430) is essentially sensitive to the effective portion Bw of the external magnetic flux density B _ext , the flux density vector of which is parallel to the surface of the electrically non-conductive carrier substrate 1350 within of the right sensor element SE. The right sensor element SE (1430) comprises a carrier material TM in which the diamond nanocrystals ND with the NV centers are typically embedded within the sensor element SE.

Figure 56

The 56 shows various placements of various sensor elements in connection with an exemplary tri-plate line 2380. In an analogous manner, a microstrip line 1380 or a slot line 1880 can also be used instead of a tri-plate line 2380.

The professionally trained person receives from the 56 the corresponding figure with a microstrip line 1380, by omitting the electrically conductive left signal ground area 1310 of the exemplary triplate line 2380 and by omitting the electrically conductive right signal ground area 1320 the exemplary triplate line 2380. As a result, the non-conductive left insulation gap 2340 then becomes the electrically essentially non-conductive left insulation surface 1340. As a result, the non-conductive right insulation gap 2350 then also becomes the electrically essentially non-conductive left insulation surface 1350.

The professionally trained person receives from the 56 the corresponding figure with a slot line 1880, by omitting the signal conductor 1330 of the exemplary triplate line 2380. As a result, the non-conductive left insulation gap 2340 and the non-conductive right insulation gap 2350 become the electrically essentially non-conductive slot 1840 of the slot line 1880 .

To reduce the effort, the following text describes the description 56 therefore only the tri-plate line 2380 represents other types of strip lines, such as the strip line 1380 or the slot line 1880. Other line types, in particular planar wave lines, are therefore included in the disclosure.

56 shows a tri-plate line 2380 as an example of a microstrip line.

The document presented here refers, as an example, to the book R.K. Hoffmann “Integrated Microwave Circuits: Electrical Basics, Dimensioning, Technical Implementation, Technologies” Springer; 1st Edition (June 1, 1983), ISBN-10: 3540123520, ISBN-13: 978-3540123521.

Various microstrip lines are listed there. The use of the microstrip lines described there as a microstrip line in a device in the sense of the document presented here is hereby disclosed.

The exemplary Tri-Plate cable 2380 56 comprises a preferably not or only slightly electrically conductive carrier substrate 1360, an electrically conductive back contact 1370 on the underside of the electrically conductive carrier substrate 1360, an electrically conductive left signal ground surface 1310 on the top of the electrically conductive carrier substrate 1360, an electrically conductive right signal ground surface 1320 on the top of the electrically conductive carrier substrate 1360, an electrically conductive signal line 1330 on the top of the electrically conductive carrier substrate 1360 between the electrically conductive left signal ground surface 1310 and the electrically conductive right signal ground surface 1320. The carrier substrate 1360 can, for example, be an insulating layer in the metallization stack of a micro-integrated circuit, in particular a micro-integrated Semiconductor circuit, in particular a CMOS or BiCMOS or bipolar circuit or a circuit based on III / V materials or the like. With the exemplary Tri-Plate cable 1480 the 56 An electrically substantially non-conductive left isolation gap 2340 separates the electrically conductive signal line 1330 from the electrically conductive left signal ground surface 1310. Additionally, an electrically substantially non-conductive right isolation gap 2350 separates the electrically conductive signal line 1330 from the electrically conductive right signal ground surface 1450. Preferred the tri-plate line 2380 has a wave resistance in relation to the electrically conductive signal line 1330 as the “hot” inner conductor and the community of electrically conductive left signal ground surface 1310, electrically conductive right signal ground surface 1320 and electrically conductive rear contact 1370 as ground electrodes. The advantage of using a tri-plate line 2380 is the good shielding of the environment against the microwave radiation of the microwave signal µW, which the microwave signal source µWG feeds into the electrically conductive signal line 1330 of the tri-plate line 2380.

A left sensor element SE(1410) is shown as a left sensor element SE(1410) placed in the non-conductive left insulation gap 2340 of the tri-plate line 2380.

In the example of the 56 For example, the diameter d _SE of the sensor element SE (1410) is smaller than the width d _IS1 of the non-conductive left insulation gap 2340 of the tri-plate line 2380. In the example 56 There are no parts of the left sensor element SE (1410) to the left or right of the non-conductive left insulation gap 2340 of the tri-plate line 2380 and at the same time also on or above the electrically conductive left signal ground surface 1310 of the exemplary tri-plate line 2380 or also on or above the signal conductor 1330 of the exemplary microstrip line 1380 or the exemplary triplate line 2380. For better clarity, the direction of the vector 1440 is the magnetic flux density of the microwave field of the microwave signal µW that the microwave signal source µWG into the tri-plate line 2380 feeds into the 56 shown in the area of the left sensor element SE (1410).

For greater clarity, the direction of the vector 1440 is the magnetic flux density of the microwave field of the microwave signal µW that the microwave signal source µWG feeds into the signal line 1330 of the tri-plate line 2380 56 shown in the area of the left sensor element SE (1410). The fluorescence radiation FL of the NV centers in the diamond nanocrystals ND of the left sensor element SE (1410) is essentially sensitive to the effective portion Bw of the external magnetic flux density B _ext , the flux density vector of which is perpendicular to the surface of the electrically non-conductive carrier substrate 1360 or whose flux density vector is parallel to the signal line 1330 within the left sensor element SE (1410). The left sensor element SE (1410) comprises a carrier material TM in which the diamond nanocrystals ND with the NV centers are typically embedded within the left sensor element SE (1410).

A right sensor element SE(1430) is shown as a right sensor element SE(1430) placed in the non-conductive right insulation gap 2350 of the tri-plate line 2380.

In the example of the 56 For example, the diameter d _SE of the right sensor element SE (1430) is smaller than the width d _IS2 of the non-conductive right insulation gap 2350 of the tri-plate line 2380.

In the example of the 56 There are no parts of the right sensor element SE (1430) to the left or right of the non-conductive right insulation gap 2350 of the tri-plate line 2380 and at the same time on or above the electrically conductive right signal ground surface 1320 of the exemplary tri-plate line 2380 or on or above the signal conductor 1330 of the exemplary microstrip line 1380 or the exemplary triplate line 2380.

For clarity, the direction of the vector 1460 is the magnetic flux density B _µW of the microwave field of the microwave signal µW that the microwave signal source µWG feeds into the tri-plate line 2380 56 marked in the area of the right sensor element SE (1430).

For greater clarity, the direction of the vector 1460 is the magnetic flux density of the microwave field of the microwave signal µW that the microwave signal source µWG feeds into the signal line 1330 of the tri-plate line 2380 56 marked in the area of the right sensor element SE (1430). The fluorescence radiation FL of the NV centers in the diamond nanocrystals ND of the right sensor element SE (1430) is essentially sensitive to the effective portion Bw of the external magnetic flux density B _ext , the flux density vector of which is perpendicular to the surface of the electrically non-conductive carrier substrate 1360 or whose flux density vector is parallel to the signal line 1330 within the right sensor element SE (1430). The right sensor element SE (1430) comprises a carrier material TM in which the diamond nanocrystals ND with the NV centers are typically embedded within the right sensor element SE (1430).

A middle sensor element SE(1420) is shown as a middle sensor element SE(1420) placed on the signal conductor 1330 of the exemplary microstrip line 1380 or the exemplary triplate line 2380.

In the example of the 56 The diameter d _SE of the sensor element SE (1420) is, for example, smaller than the width ds of the signal conductor 1330 of the exemplary microstrip line 1380 or the exemplary triplate line 2380.

In the example of the 56 There are no parts of the middle sensor element SE (1420) to the left or right of the signal conductor 1330 of the exemplary microstrip line 1380 or the exemplary tri-plate line 2380 or in the non-conductive left insulation gap 2340 of the exemplary tri-plate line 2380 or not -conductive right insulation gap 2350 of the exemplary tri-plate line 2380.

For clarity, the direction of the vector 1450 is the magnetic flux density B _µW of the microwave field of the microwave signal µW that the microwave signal source µWG feeds into the tri-plate line 2380 36 shown in the area of the middle sensor element SE (1420).

For greater clarity, the direction of the vector 1450 is the magnetic flux density B _µW of the microwave field of the microwave signal µW that the microwave signal source µWG feeds into the signal line 1330 of the tri-plate line 2380 56 shown in the area of the middle sensor element SE (1420). The fluorescence radiation FL of the NV centers in the diamond nanocrystals ND of the middle sensor element SE (1420) is essentially sensitive to the effective proportion Bw of the external nen magnetic flux density B _ext , the flux density vector of which is parallel to the surface of the electrically non-conductive carrier substrate 1360 within the middle sensor element SE (1420). The middle sensor element SE (1420) comprises a carrier material TM in which the diamond nanocrystals ND with the NV centers are typically embedded within the middle sensor element SE (1420).

Figure 57

57 equals to 57 supplemented by a flat coil 2520 as a magnetic field generating means Lc. Said flat coil 2520 is just an example of a possible magnetic field generating means Lc. The flat coil 2520 can have multiple turns and multiple layers. In the example of the 57 the flat coil 2520 is electrically insulated from the electrically conductive back contact 1370 of the exemplary triplate line 2380 by an insulation layer 2510. When energized by a driver stage DRVL, which serves to supply the magnetic field generating means Lc in the form of the flat coil 2520 with electrical energy and/or to control the magnetic field generating means Lc in the form of the flat coil 2520, the flat coil 2520 generates a magnetic field with an additional magnetic flux density B _ad . This additional magnetic flux density B _ad now flows through the middle sensor element SE (1420) placed on the signal conductor 1330 of the exemplary microstrip line 1380 or the exemplary triplate line 2380. This allows devices according to the 69 to 71 and 73 to 81 use this flat coil 2520 as a magnetic field generating means Lc that compensates and/or modulates and/or changes the total magnetic flux density B _Σ . So that the additional magnetic field with the additional magnetic flux density B _ad is expressed parallel to the surface of the electrically non-conductive carrier substrate 1360 within the middle sensor element SE (1420), the flat coil 2520 should preferably be converted into a first partial flat coil to the left of the signal conductor 1330 of the exemplary microstrip line 1380 or the exemplary triplate line 2380 and a second partial flat coil to the right of the signal conductor 1330 of the exemplary microstrip line 1380 or the exemplary triplate line 2380. Typically, the driver stage DRVL, which serves to supply the magnetic field generating means Lc in the form of the flat coil 2520 with electrical energy and/or to control the magnetic field generating means Lc in the form of the flat coil 2520, energizes to generate the magnetic flux density B _ad parallel to the surface of the electrically non-conductive Carrier substrate 1360 within the middle sensor element SE (1420) such that the direction of the flux density vector of the magnetic field that the first partial coil generates is opposite to the direction of the flux density vector that the second partial coil generates.

Typically, the driver stage DRVL, which serves to supply the magnetic field generating means Lc in the form of the flat coil 2520 with electrical energy and/or to control the magnetic field generating means Lc in the form of the flat coil 2520, energizes to generate the magnetic flux density B _ad perpendicular to the surface of the electrically non-conductive Carrier substrate 1360 within the middle sensor element SE (1420) such that the direction of the flux density vector of the magnetic field that the first partial coil generates is aligned with the direction of the flux density vector that the second partial coil generates.

Through this different current supply to the partial coils of the flat coil 2520, the driver stage DRVL can thus select whether and to what extent the left sensor element 1410 and the right sensor element 1430 on the one hand or the middle sensor element 1420 on the other hand are affected by the additional magnetic field with the magnetic flux density B _ad , that the flat coil 2520 generates should be influenced. Due to the different current supply to the partial flat coils of the flat coil 2520, driver stage DRVL can thus adjust the directional sensitivity of the left sensor element 1410 and the right sensor element 1430 on the one hand or of the middle sensor element 1420.

This allows devices according to the 69 to 71 and 73 to 81 use this flat coil 2520 as a magnetic field generating means Lc that compensates and/or modulates and/or changes the vector 1440 of the magnetic flux density B _µW of the microwave field of the microwave signal µW. The microwave signal source µWG again feeds the microwave signal µW into the signal line 1330 of the tri-plate line 2380 a. Here, the vector 1450 represents the magnetic flux density B _µW of the microwave field of the microwave signal µW the total magnetic flux density B _Σ that penetrates the middle sensor element SE (1420).

Figures 58 to 61

The 58 to 61 illustrate the production of the middle sensor element SE (1320) at the second end of the middle optical fiber LWL (4630). The procedure can be carried out in an analogous manner can also be used to produce a left sensor element SE (1310) at the second end of a left optical fiber LWL (4610) and / or to produce a right sensor element SE (1320) at the second end of a right optical fiber LWL (4610). In the description, only the corresponding designations need to be exchanged for each other. These can also be used for other waveguides mentioned in this document and in the documents cited if the optical waveguides are preferably arranged essentially parallel to the conductors.

Figure 58

The method begins with providing the carrier substrate 1360, where in the example 47 the provided carrier substrate 1360 includes the tri-plate line 2380 with the electrically conductive left signal ground surface 1310 and the electrically conductive right signal ground surface 1320 and the middle signal conductor 1330 and the electrically conductive rear contact 1370 and, for example, the middle optical fiber LWL (4630). The second end of the middle optical fiber optic cable LWL (4630) is here, for example, on the middle signal conductor 1330.

Figure 59

In a subsequent step of the method, the surface of the carrier substrate 1360 is covered with the sensor element layer 4810. The sensor element layer 4810 preferably comprises one of these colloidal mixtures (colloidal lacquer KL) of the diamond nanocrystals ND and the still liquid carrier material TM. The sensor element layer 4810 is therefore preferably filled with diamond nanocrystals ND. The diamond nanocrystals ND preferably comprise paramagnetic centers which, when irradiated with electromagnetic pump radiation LB of the pump radiation wavelength λ _pmp , emit fluorescence radiation FL with a fluorescence radiation wavelength λ _fl . The paramagnetic centers are particularly preferably NV centers. If necessary, the surface of the carrier substrate 1360 is pretreated, for example by plasma termination and/or by an adhesion promoter layer, in order to ensure good wetting of the surface of the carrier substrate 1360 by the still liquid carrier material TM. The sensor element layer 4810 is preferably hardened, for example, by means of a temperature or storage step. This temperature step, which is preferably carried out, then preferably hardens the carrier material TM in order to stabilize it.

Figure 60

In a subsequent step of the method, a curing radiation source typically feeds the curing radiation 4910 with the curing wavelength λ _H into the first end of the middle optical fiber LWL (4630) via a middle micro-optical coupling structure. In the 49 The sensor element layer 4810 covers the middle optical fiber LWL (4630), which is located here under the sensor element layer 4810. The curing radiation 4910 then exits the middle optical fiber LWL (4630) at the second end of the middle optical fiber LWL (4630) and enters the mass of the sensor element layer 4810. As a result, the curing radiation 4910 irradiates the initially still liquid or hardened carrier material TM of the sensor element layer 4810 with electromagnetic curing radiation 4910 of the curing wavelength λ _H. As a result, the carrier material TM of the sensor element layer 4810 solidifies into solidified carrier material TM of the sensor element layer 4810. As a result, the later middle sensor element SE (1320) is already forming in the sensor element layer 4810.

Figure 61

In a subsequent step of the process, the already formed middle sensor element SE(1320) is exposed by cleaning with a solvent. Cleaning with the solvent removes the areas of the sensor element layer 4810 that are not or not sufficiently irradiated with electromagnetic curing radiation ₄₉₁₀ of the curing wavelength The special feature of the medium optical fiber LWL (4630) proposed in the document presented here is that the carrier material TM is a carrier material TM cured by means of electromagnetic curing radiation 4910 and that after curing the carrier material TM is suitable for electromagnetic radiation with a pump radiation wavelength λ _pmp of the pump radiation LB , with which the NV centers and/or the other paramagnetic centers in the diamond nanocrystals ND are pumped, is essentially transparent. After hardening, the carrier material TM is preferably exposed to electromagnetic radiation with a fluorescent radiation wavelength λ _fl of the fluorescent radiation FL, with which the NV centers and/or the other paramagnetic centers in the diamond nanocrystals ND fluoresce upon irradiation with electromagnetic radiation with a pump radiation wavelength λ _pmp of the pump radiation LB, is essentially transparent. Essentially, this means that the losses that undoubtedly occur are still so low that the functionality of the application in question is still ensured. By curing a previously liquid or hardened carrier material TM, the production of such a medium optical fiber LWL (4630) is particularly easy and reliable to produce with a high C _pk value If the second end of the optical fiber LWL (4630) is separated from the carrier material TM of the sensor element 4810 is encased, this optical coupling is particularly well stabilized.

An end surface of the second end of the optical waveguide LWL(4630) preferably forms a flat end surface perpendicular to the center line of the optical waveguide LWL(4630). The center line typically corresponds to the optical axis of the LWL (4630) optical fiber. Such an end surface enables improved coupling of the electromagnetic pump radiation LB from the optical waveguide LWL (4630) and improved optical coupling of the fluorescent radiation FL into the optical waveguide LWL (4630). The LWL (4630) is therefore preferably formed using a suitable etching process (eg DRIE or RIE etching), which preferably produces vertical flanks. The distance of one or preferably several crystals and/or diamond nanocrystals ND from this flat end surface is preferably smaller than the pump radiation wavelength λ _pmp and/or better smaller than ½ of the pump radiation wavelength λ _pmp , and/or better smaller than 1/4 of Pump radiation wavelength λ _pmp , and/or better smaller than 1/8 of the pump radiation wavelength λ _pmp , and/or better smaller than 1/10 of the pump radiation wavelength λ _pmp , and/or better smaller than 1/20 of the pump radiation wavelength λ _pmp , and/or better smaller than 1/50 of the pump radiation wavelength λ _pmp , and/or better smaller than 1/100 of the pump radiation wavelength λ _pmp , and/or better smaller than 1/200 of the pump radiation wavelength λ _pmp , and/or better smaller than 1/500 of the pump radiation wavelength λ _pmp , and/or better less than 1/1000 of the pump radiation wavelength λ _pmp .

The center line, which is an imaginary auxiliary construction to clarify the matter, pierces the end surface at a midpoint of the end surface. The thickness d _l of the carrier material TM is preferably thicker at this center point than the thickness d _r at other points of the end surface of the second end of the optical waveguide LWL (4630). This has the advantage that light is reflected back through the carrier material TM/air interface into the optical fiber LWL (4630) and that the efficiency and efficiency of the light coupling then increases.

The carrier material TM therefore preferably forms a lens at the second end of the optical waveguide LWL (4630). The diameter D _LWLL of the lens is preferably, but not necessarily, smaller than the diameter of the optical fiber LWL (4630). The 66 shows a sensor element whose diameter or lens diameter is larger than the diameter D _LWL of the optical fiber LWL (4630). The 61 shows, however, a sensor element 1420 whose diameter or lens diameter D _LWLL is smaller than the diameter of the optical waveguide LWL (4630). The diameter D _LWLL of the lens can also be as large as the diameter D _LWL of the optical fiber LWL (4630).

The optical waveguide LWL (4630) is preferably completely or partially encased and/or covered in a light-tight manner by a mechanical sheath MH, which can also only have the purpose of preventing crosstalk between different optical waveguides of the device. The mechanical shell MH is preferably made of glass or ceramic, plastic or the like and is non-transparent to relevant electromagnetic radiation. The mechanical shell MH therefore preferably has a ceramic material or a plastic material or another non-magnetizable and/or electrically non-conductive material and/or a material which is stable at temperatures above 100°C and/or a material which is stable at temperatures above 140°C and / or a material stable at temperatures above 170 ° C and / or a material stable at temperatures above 200 ° C and / or a material stable at temperatures above 250 ° C or includes these or consists of these in extreme cases. The mechanical shell MH can therefore be made of a ceramic material or a plastic material or of another non-magnetizable and/or electrically non-conductive material and/or of a material which is stable at temperatures above 100°C and/or of a material which is stable at temperatures above 140°C stable material and / or made of a material stable at temperatures above 170 ° C and / or made of a material stable at temperatures above 200 ° C and / or made of a material stable at temperatures above 250 ° C.

The mechanical sheath MH preferably forms, at least in sections, a tube or tube or a capillary or a cannula or a cover of the optical waveguide LWL (4630), which corresponds to the respective Fiber optic cable LWL (4630) is covered or at least partially or completely covered. This simplifies the production of the system consisting of optical fiber, sensor element SE(1420) and mechanical sleeve MH. The inner diameter D _ro of such a tube or such a cover or such a tube or such a capillary or such a cannula is preferably only a little larger or the same size as the diameter of the optical waveguide lens and the diameter of the optical waveguide LWL (4630).

The optical fiber LWL(4630) typically has an optical fiber core LWLC. In the carrier material TM, the carrier material TM preferably forms an optical functional element at the second end of the optical waveguide LWL (4630). This again improves the said optical coupling between the optical fiber LWL (4630) and the carrier material TM. The optical functional element then interacts optically with the optical waveguide core of the optical waveguide LWL(4630) at the second end of the optical waveguide LWL(4630).

The optical functional element preferably has an optical waveguide lens, in particular in the form of a thickening of the carrier material TM in the area of the optical functional element.

• • Bereitstellen 15310 eines Lichtwellenleiters LWL(4630), wobei der Lichtwellenleiter LWL(4630) ein erstes Ende und ein zweites Ende aufweist;
• • Bereitstellen 15320 eines flüssigen und mittels elektromagnetischer Strahlung einer Aushärtestrahlung 4910 mit einer Aushärtewellenlänge λ_H härtbaren Trägermaterials TM, wobei in das Trägermaterial TM eine Vielzahl von Kristallen und/oder Diamant-Nano-Kristallen ND, vorzugsweise Nanodiamanten, eingebettet sind und wobei einer oder mehrere oder alle Kristalle und/oder Diamant-Nano-Kristalle ND NV-Zentren und/oder andere paramagnetischen Zentren aufweisen und wobei die NV-Zentren der Kristalle und/oder Diamant-Nano-Kristalle ND des Trägermaterials TM und/oder die anderen paramagnetischen Zentren der Kristalle und/oder Diamant-Nano-Kristalle ND des Trägermaterials TM bei Bestrahlung mit Pumpstrahlung LB zumindest eine Fluoreszenzstrahlung FL emittieren;

• • Benetzen 15330 des zweiten Endes des Lichtwellenleiters LWL(4630) zumindest auf eine Benetzungslänge L_B mit dem Trägermaterial TM, das die Vielzahl eingebetteter Kristalle und/oder Diamant-Nano-Kristalle ND mit NV-Zentren und/oder paramagnetischen Zentren aufweist;
• • Einspeisen 15340 elektromagnetischer Strahlung in das erste Ende des Lichtwellenleiters LWL(4630), wobei die Wellenlänge dieser elektromagnetischen Strahlung, die Aushärtewellenlänge λ_H, so gewählt ist, dass das Trägermaterial TM am zweiten Ende des Lichtwellenleiters LWL(4630) aushärtet und sich in einen Festkörper wandelt.
• • Entfernen 15350 des nicht ausgehärteten Trägermaterials TM insbesondere mittels eines Lösungsmittels LM, wobei der verbleibende Film des Trägermaterials TM am zweiten Ende des Lichtwellenleiters LWL(4630) das Sensorelement SE bildet.

The essence of the document presented here is that it also describes and discloses a method for producing an optical fiber LWL (4630), as previously described and used. The proposed method includes the steps (See Figure 153):

• • Providing 15310 an optical fiber LWL(4630), the optical fiber LWL(4630) having a first end and a second end;
• • Providing 15320 a liquid carrier material TM that can be hardened by means of electromagnetic radiation of a curing radiation 4910 with a curing wavelength λ _H , a plurality of crystals and/or diamond nanocrystals ND, preferably nanodiamonds, being embedded in the carrier material TM, and wherein one or more or all crystals and/or diamond nanocrystals ND have NV centers and/or other paramagnetic centers and wherein the NV centers of the crystals and/or diamond nanocrystals ND of the carrier material TM and/or the other paramagnetic centers of Crystals and/or diamond nanocrystals ND of the carrier material TM emit at least one fluorescent radiation FL when irradiated with pump radiation LB;

• • Wetting 15330 the second end of the optical waveguide LWL (4630) at least to a wetting length L _B with the carrier material TM, which has the plurality of embedded crystals and / or diamond nanocrystals ND with NV centers and / or paramagnetic centers;
• • Feeding 15340 electromagnetic radiation into the first end of the optical waveguide LWL (4630), the wavelength of this electromagnetic radiation, the curing wavelength λ _H , being selected so that the carrier material TM hardens at the second end of the optical waveguide LWL (4630) and turns into one Solid body transforms.
• • Removing 15350 the uncured carrier material TM, in particular by means of a solvent LM, with the remaining film of the carrier material TM forming the sensor element SE at the second end of the optical waveguide LWL (4630).

Typically, the carrier material TM only partially hardens, which enables the formation of the optical functional element and the sensor element SE.

Thus, a middle optical fiber LWL (4630) is now placed on the electrically conductive signal line 1330 of the tri-plate line 2380 in a self-adjusting manner, for example. The document presented here therefore proposes combining this middle optical fiber LWL (4630) with a middle sensor element SE (1420). The middle sensor element SE (1420) has a carrier material TM, in which a large number of diamond nano-crystals ND are typically embedded. One or more or all diamond nanocrystals ND of these diamond nanocrystals ND have one or more NV centers and/or one or more other paramagnetic centers. The NV centers of the middle sensor element SE(1420) and/or the other paramagnetic centers of the middle sensor element SE(1420) emit at least one fluorescent radiation FL when irradiated with pump radiation LB with a pump radiation wavelength λ _pmp . with a fluorescence radiation wavelength λ _fl . The special feature of the medium optical fiber LWL (4630) proposed in the document presented here is that the carrier material TM is preferably a carrier material TM cured by means of electromagnetic radiation (hardening radiation 4910) and that the carrier material TM, after curing, is suitable for electromagnetic radiation with a pump radiation wavelength λ _pmp of the pump radiation LB, with which the NV centers of the middle lower sensor element SE (1420) and / or the other paramagnetic centers of the middle sensor element SE (1420) are pumped by one of the proposed devices, is essentially transparent. Essentially this means that the losses that will undoubtedly occur are still so low that the functionality of the application in question is still ensured. In the same way, the carrier material TM should be essentially transparent for radiation with a fluorescence wavelength λ _fl of the fluorescence radiation LB of the NV centers of the middle sensor element SE (1420) and / or the other paramagnetic centers of the middle sensor element SE (1420). Essentially this means that the losses that will undoubtedly occur are still so low that the functionality of the application in question is still ensured. To produce the middle sensor element SE (1420), the surface of the carrier substrate 1360 is connected to the middle electrically conductive signal line 1330 of the tri-plate line 2380 and the other lines 1310, 1320 of the tri-plate line 2380 and to the middle optical fiber optic cable LWL (4630) a colloidal mixture (colloidal lacquer KL) of the diamond nanocrystals ND with paramagnetic centers and/or NV centers and crystals with paramagnetic centers on the one hand and the still liquid carrier material TM on the other hand as a sensor element layer 4810 via the middle electrically conductive signal line 1330 the tri-plate line 2380 and the other lines 1310, 1320 of the tri-plate line 2380 and the middle optical fiber LWL (4630). If necessary, the lacquer layer of the colloidal mixture (colloidal lacquer KL) is hardened in a subsequent temperature step in order to stabilize it.

The manufacturing process of the middle sensor element SE (1420) preferably includes, in a subsequent manufacturing step, the local irradiation of this colloidal mixture (colloidal lacquer KL) of the diamond nanocrystals ND and the still liquid carrier material TM of the sensor element layer 4810 with an electromagnetic curing radiation 4910 of the curing wavelength λ _H . The local irradiation of this colloidal mixture (colloidal lacquer KL) of the diamond nanocrystals ND and the still liquid carrier material TM of the sensor element layer 4810 with an electromagnetic curing radiation 4910 of the curing wavelength λ _H is preferably on the area of the sensor element layer 4810 at the second end of the middle optical fiber optic cable LWL (4630). The electromagnetic curing radiation 4910 of the curing wavelength λ _H is preferably UV radiation. For example, the area of the sensor element layer 4810 irradiated with the electromagnetic curing radiation 4910 of the curing wavelength λ _H can be limited by a mask 5410, which is adjusted in a previous adjustment step relative to adjustment marks (5210, 5220) on the surface of the carrier substrate 1360 and, for example, in a mask aligner (mask adjustment and alignment device) has been aligned. The carrier substrate 1360 therefore preferably has the lines 1310, 1320, 1330 of the tri-plate line 2380 (or another possible microstrip line) and the adjustment marks (5210, 5220) for adjusting one or more exposure masks 5410. By irradiating the sensor element layer 4810, which comprises the colloidal mixture (colloidal lacquer KL) of the diamond nanocrystals ND and the still liquid or hardened carrier material TM of the sensor element layer 4810, with electromagnetic curing radiation 4910 of the curing wavelength λ _H , the previously solidified typically liquid or hardened carrier material TM of the sensor element layer 4810 to solidified carrier material TM of the sensor element layer 4810 in the area of the sensor element layer 4810 irradiated with the electromagnetic curing radiation 4910 of the curing wavelength λ _H. As a result, the middle sensor element SE (1430) is already hidden within the sensor element layer 4810. In a typically subsequent process step, non-solidified areas of the sensor element layer 4810, which were previously typically not or only inadequately irradiated with curing radiation 4910 of the curing wavelength λ _H , can be dissolved using a solvent for the still liquid or hardened carrier material TM of the sensor element layer 4810 and removed from the the surface of the carrier substrate 1360 and the other lines 1310, 1320, 1330 and from the electrically essentially non-conductive left insulation surface 1340 and from the electrically essentially non-conductive right insulation surface 1360 etc. on the surface of the carrier substrate 1360. The finished middle sensor element SE (1320) remains. The production of the middle sensor element SE (1320) is particularly elegant when a curing radiation source feeds electromagnetic curing radiation 4910 of the curing wavelength λ _H into the middle optical fiber LWL (4630) during the manufacturing process. To apply the technical teaching presented here, the middle optical fiber optic fiber (4630) preferably has micro-optical structures on the surface of the carrier substrate 1360, which enable the coupling of such electromagnetic curing radiation 4910 of the curing wavelength λ _H in the manufacturing process into the middle optical fiber fiber (4630). allow. These micro-optical structures, which allow the coupling of such electromagnetic curing radiation 4910 of the curing wavelength λ _H in the manufacturing process into the middle optical fiber LWL (4630), are preferably used later to couple the pump radiation LB of the pump radiation wavelength λ _pmp into the middle optical fiber LWL (4630 ) and/or for coupling out the fluorescent radiation FL with the fluorescent beam wavelength λ _fl from the middle optical fiber LWL (4630). The surface of the carrier substrate 1360 therefore preferably has micro-optical structures which are designed to feed electromagnetic curing radiation 4910 of the curing wavelength λ _H into the middle optical fiber LWL (4630) during the manufacturing process. Preferably, in the areas of the surface of the carrier substrate 1360, which have micro-optical structures that are designed to feed electromagnetic curing radiation 4910 of the curing wavelength λ _H into the middle optical fiber LWL (4630) during the manufacturing process, the sensor element layer 4810 before curing of the sensor element layer 4810 locally removed. It is also conceivable, for example, to apply the sensor element layer 4810 in a roughly pre-structured, locally limited manner using a dispenser or screen printing only in the area of the second ends of the middle optical fiber LWL (4630), so that this removal is not necessary from the outset. In the manufacturing process, for example, via the said micro-optical structures, which allow the coupling of such an electromagnetic curing radiation 4910 of the curing wavelength λ _H in the manufacturing process into the middle optical fiber LWL (4630), electromagnetic curing radiation 4910 of the curing wavelength λ _H is present at a first end of the middle optical Fiber optic cable LWL (4630) is fed into the middle optical fiber optic cable LWL (4630). The middle optical fiber LWL (4630) transports the electromagnetic curing radiation 4910 of the curing wavelength λ _H from the first end of the middle optical fiber LWL (4630) to the second end of the optical fiber LWL (4630). The electromagnetic curing radiation 4910 of the curing wavelength λ _H then typically emerges again at the other, second end of the middle optical fiber LWL (4630). Preferably, the second end of the middle optical fiber LWL (4630) is covered with a region of the sensor element layer 4810. The electromagnetic curing radiation 4910 of the curing wavelength λ _H irradiates the still liquid carrier material TM of the sensor element layer 4810 and thus hardens the still liquid carrier material TM of the sensor element layer 4810 into solidified carrier material TM of the sensor element layer 4810. In the said, typically subsequent method step, non-solidified areas of the sensor element layer 4810, which were typically not or only inadequately irradiated with curing radiation 4910 of the curing wavelength λ _H , can be dissolved using a solvent for the still liquid carrier material TM of the sensor element layer 4810 and removed from the surface of the carrier substrate 1360 and from the other lines 1310, 1320, 1330 and from the electrically essentially non-conductive left insulation surface 1340 and from the electrically essentially non-conductive right insulation surface 1360 etc. on the surface of the carrier substrate 1360. What remains is the finished middle sensor element SE (1420), which is now manufactured in an optimal manner and self-aligning with respect to the second end of the middle optical fiber LWL (4630). This hardening of a previously liquid and possibly hardened carrier medium TM makes the production of the middle sensor element SE (1420) relative to the second end of such a middle optical fiber LWL (4630) particularly simple and reliable in a self-adjusting manner with a high C _pk value manufacture.

Figures 62 to 66

The 62 to 66 illustrate the production of the middle sensor element SE (1320) at the second end of the middle optical fiber LWL (4630) using a mask-controlled process. The method can also be used in an analogous manner to produce a left sensor element SE(1310) at the second end of a left optical fiber optic cable LWL (4610) and/or to produce a right sensor element SE(1310) at the second end of a right optical fiber optic cable LWL (4610). be used. This manufacturing principle can be transferred in an analogous and functionally equivalent manner to the manufacture of other sensor elements by a skilled person. In the description, only the corresponding designations need to be exchanged for each other.

Figure 62

The method begins again by providing the carrier substrate 1360, in the example 62 the provided carrier substrate 1360 includes the tri-plate line 2380 with the electrically conductive left signal ground surface 1310 and the electrically conductive right signal ground surface 1320 and the middle signal conductor 1330 and the electrically conductive rear contact 1370 and, for example, the middle optical fiber LWL (4630). The second end of the middle optical fiber LWL (4630) is here, for example, again on the middle signal conductor 1330.

Figure 63

In order to be able to carry out the mask-based method proposed here, the surface of the carrier substrate 1360 is provided with one or more alignment marks 5210, 5220. The alignment marks 5210, 5220 can also have been made in a previous process step. For example, it is conceivable to produce one or more left alignment marks 5210 together with the electrically conductive left signal ground surface 1310 of the exemplary triplate line 2380. For example, it is conceivable to produce one or more right alignment marks 5220 together with the electrically conductive right signal ground surface 1320 of the exemplary triplate line 2380.

Figure 64

In a subsequent step of the method, the surface of the carrier substrate 1360 is partially covered with the sensor element layer 4810. This can be done, for example, by screen printing and/or a dispenser. The sensor element layer 4810 preferably comprises one of these colloidal mixtures (colloidal lacquer KL) of the diamond nanocrystals ND and the still liquid carrier material TM. The sensor element layer 4810 is therefore preferably filled with diamond nanocrystals ND. The diamond nanocrystals ND preferably comprise paramagnetic centers which, when irradiated with electromagnetic pump radiation LB of the pump radiation wavelength λ _pmp , emit fluorescence radiation FL with a fluorescence radiation wavelength λ _fl . The paramagnetic centers are particularly preferably NV centers. If necessary, the surface of the carrier substrate 1360 is pretreated, for example by plasma termination and/or by an adhesion promoter layer, in order to ensure good wetting of the surface of the carrier substrate 1360 by the still liquid carrier material TM. If necessary, the carrier material TM of the sensor element layer 4810 is hardened in a further step, for example in a subsequent temperature or storage step.

Figure 65

In a subsequent step of the method, a curing radiation source typically irradiates the sensor element layer 4810 with the curing radiation 4910 of the curing wavelength λ _H. In the 65 The sensor element layer 4810 covers the middle optical fiber LWL (4630), which is located here under the sensor element layer 4810. In the 65 A shadow mask 5410 structures the curing radiation 4910. Typically, the shadow mask 5410 has some transmission regions 5420 that are transparent to the electromagnetic curing radiation 4910 of the curing wavelength λ _H. The remaining areas of the shadow mask 5410 are typically essentially not transparent to the electromagnetic curing radiation 4910 of the curing wavelength λ _H. In the area of the transmission areas 5420, the curing radiation source then irradiates the sensor element layer 4810 with electromagnetic curing radiation 4910 of the curing wavelength λ _H in irradiated areas of the sensor element layer 4810. This curing radiation 4910 enters the mass of the sensor element layer 4810 in these irradiated areas of the sensor element layer 4810. As a result, the curing radiation 4910 irradiates the initially still liquid carrier material TM of the sensor element layer 4810 in these irradiated areas of the sensor element layer 4810 with electromagnetic curing radiation 4910 of the curing wavelength λ _H. As a result, the hardened carrier material TM of the sensor element layer 4810 solidifies in these irradiated areas of the sensor element layer 4810 to form solidified carrier material TM of the sensor element layer 4810. As a result, the later middle sensor element SE (1320) is already forming in the sensor element layer 4810.

The problem, however, is that the process is not self-adjusting and therefore has higher tolerances.

Figure 66

In a subsequent step of the process, the already formed middle sensor element SE(1320) is exposed by cleaning with a solvent. Cleaning with the solvent removes the areas of the sensor element layer 4810 that are not or not sufficiently irradiated with electromagnetic curing radiation 4910 of the curing wavelength λ _H. The remaining middle sensor element SE (1320) is connected to the middle optical fiber optic cable LWL when the mask 5410 is correctly adjusted relative to the carrier substrate 1360 (4630) optically coupled. The special feature of the medium optical fiber LWL (4630) proposed in the document presented here is that the carrier material TM is a carrier material TM cured by means of electromagnetic curing radiation 4910 and that the carrier material TM after hardening is essentially transparent to electromagnetic radiation with a pump radiation wavelength λ _pmp of the pump radiation LB, with which the NV centers and/or the other paramagnetic centers in the diamond nanocrystals ND are pumped. After hardening, the carrier material TM is preferably exposed to electromagnetic radiation with a fluorescence radiation wavelength λ _fl of the fluorescence radiation FL, with which the NV centers and/or the other paramagnetic centers in the diamond nanocrystals ND upon irradiation with electromagnetic radiation with a pump radiation wavelength X _pmp of the pump radiation LB fluoresce, is essentially transparent. Essentially, this means that the losses that undoubtedly occur are still so low that the functionality of the application in question is still ensured. By curing a previously liquid carrier agent TM, the production of such a medium-sized optical fiber LWL (4630) is particularly easy and reliable with an acceptable C _pk value.

With regard to the carrier material TM, the document presented here refers to the other descriptions of the carrier material TM in this document.

• • Bereitstellen 15410 eines Lichtwellenleiters LWL(4630), wobei der Lichtwellenleiter LWL(4630) ein erstes Ende und ein zweites Ende aufweist;
• • Bereitstellen 15420 eines flüssigen und mittels elektromagnetischer Strahlung (Aushärtestrahlung 4910) einer Aushärtewellenlänge λ_H härtbaren Trägermaterials TM, wobei in das Trägermaterial TM eine Vielzahl von Kristallen und/oder Diamant-Nano-Kristallen ND, vorzugsweise Nanodiamanten, eingebettet sind und wobei einer oder mehrere oder alle Kristalle und/oder Diamant-Nano-Kristalle ND NV-Zentren und/oder andere paramagnetischen Zentren aufweisen und wobei die NV-Zentren der Kristalle und/oder Diamant-Nano-Kristalle ND des Trägermaterials TM und/oder die anderen paramagnetischen Zentren der Kristalle und/oder Diamant-Nano-Kristalle ND des Trägermaterials TM bei Bestrahlung mit Pumpstrahlung LB mit einer Pumpstrahlungswellenlänge λ_pmp zumindest eine Fluoreszenzstrahlung FL mit einer Fluoreszenzstrahlungswellenlänge λ_fl emittieren;
• • Beschichten 15430 des zweiten Endes des Lichtwellenleiters LWL(4630) zumindest auf eine Benetzungslänge L_B mit dem Trägermaterial TM, das die Vielzahl eingebetteter Kristalle und/oder Diamant-Nano-Kristalle ND mit NV-Zentren und/oder paramagnetischen Zentren aufweist;
• • Justieren 15440 einer Belichtungsmaske 5410 gegenüber dem Trägersubstrat 1360.
• • Bestrahlen 15450 des zweiten Endes des Lichtwellenleiters LWL(4630) durch die Belichtungsmaske 5410 mit elektromagnetischer Strahlung (Aushärtestrahlung 4910), wobei die Wellenlänge dieser elektromagnetischen Strahlung, die Aushärtewellenlänge λ_H, so gewählt ist, dass das Trägermaterial TM am zweiten Ende des Lichtwellenleiters LWL(4630) aushärtet und sich in einen Festkörper wandelt;
• • Entfernen 15460 des nicht ausgehärteten Trägermaterials TM insbesondere mittels eines Lösungsmittels LM, wobei der verbleibende Film des Trägermaterials TM am zweiten Ende des Lichtwellenleiters LWL(4630) zumindest teilweise das Sensorelement SE bildet.

The essence of the document presented here is that it also describes and discloses a method for producing an optical fiber LWL (4630), as previously described and used. The proposed procedure includes the steps:

• • Providing 15410 an optical fiber LWL(4630), the optical fiber LWL(4630) having a first end and a second end;
• • Providing 15420 a liquid carrier material TM that can be hardened by means of electromagnetic radiation (curing radiation 4910) of a curing wavelength λ _H , wherein a plurality of crystals and/or diamond nanocrystals ND, preferably nanodiamonds, are embedded in the carrier material TM and wherein one or more or all crystals and/or diamond nanocrystals ND have NV centers and/or other paramagnetic centers and wherein the NV centers of the crystals and/or diamond nanocrystals ND of the carrier material TM and/or the other paramagnetic centers of Crystals and/or diamond nanocrystals ND of the carrier material TM emit at least one fluorescent radiation FL with a fluorescent radiation wavelength λ _fl when irradiated with pump radiation LB with a pump radiation wavelength λ _pmp ;
• • Coating 15430 the second end of the optical waveguide LWL (4630) at least to a wetting length L _B with the carrier material TM, which has the plurality of embedded crystals and / or diamond nanocrystals ND with NV centers and / or paramagnetic centers;
• • Adjusting 15440 an exposure mask 5410 relative to the carrier substrate 1360.
• • Irradiate 15450 the second end of the optical waveguide LWL (4630) through the exposure mask 5410 with electromagnetic radiation (curing radiation 4910), the wavelength of this electromagnetic radiation, the curing wavelength λ _H , being selected so that the carrier material TM at the second end of the optical waveguide LWL (4630) hardens and turns into a solid;
• • Removing 15460 the uncured carrier material TM, in particular by means of a solvent LM, the remaining film of the carrier material TM at least partially forming the sensor element SE at the second end of the optical waveguide LWL (4630).

Typically, the carrier material TM only partially hardens, which enables the formation of the optical functional element and the sensor element SE.

The radiation from the curing radiation 4910 irradiated at the second end of the optical waveguide LWL (4630) for curing is preferably UV radiation. A curing radiation 4910 for curing with a curing wavelength λ _H between 320-380nm is particularly preferred.

In certain applications, nanoparticles with a diameter of less than 200nm and/or less than 100nm and/or less than 50nm and/or less than 20nm and/or less than 10nm and/or less than 5nm can be added to the carrier material TM before providing it, so that they are incorporated into the carrier material TM stored after hardening. These are preferably metallic nanoparticles. In this context, the document presented here refers to the other descriptions of these nanoparticles, which should also apply here.

Figure 67

67 equals to 61 supplemented by a flat coil 2520 as a magnetic field generating means Lc. Said flat coil 2520 is just an example of a possible magnetic field generating means Lc. The flat coil 2520 can have multiple turns and multiple layers. In the example of the 67 the flat coil 2520 is electrically insulated from the electrically conductive back contact 1370 of the exemplary triplate line 2380 by an insulation layer 2510. When energized by a driver stage DRVL, which serves to supply the magnetic field generating means Lc in the form of the flat coil 2520 with electrical energy and/or to control the magnetic field generating means Lc in the form of the flat coil 2520, the flat coil 2520 generates a magnetic field with an additional magnetic flux density B _ad .

This additional magnetic flux density B _ad now flows through the middle sensor element SE (1420) placed on the signal conductor 1330 of the exemplary microstrip line 1380 or the exemplary triplate line 2380.

This allows devices according to the 69 to 71 and 73 to 81 use this flat coil 2520 as a magnetic field generating means Lc that compensates and/or modulates and/or changes the total magnetic flux density B _Σ .

This allows devices according to the 69 to 71 and 73 to 81 use this flat coil 2520 as a magnetic field generating means Lc that compensates and/or modulates and/or changes the vector 1450 of the magnetic flux density B _µW of the microwave field of the microwave signal µW, which the microwave signal source µWG feeds into the signal line 1330 of the tri-plate line 2380.

Here the vector 1450 represents the magnetic flux density B _µW of the microwave field of the microwave signal µW, which penetrates the middle sensor element SE (1420).

Figure 68

68 applies the principles of sensor element manufacturing to all three sensor elements (1410, 1420, 1430). These correspond to three optical waveguides (4610, 4620, 4630), which are optically insulated from each other, preferably by panels, etc.

With regard to the manufacturing methods of the right sensor element SE(1430) and the left sensor element SE(1410) and the middle sensor element SE(1420), the document presented here refers to the descriptions of 58 to 66 , whereby the methods described there for producing the middle sensor element SE (1420) in functional connection with the middle optical fiber optic cable LWL (4630) are now referred to the production of the right sensor element SE (1430) in connection with the right optical fiber LWL (4620) and can be applied to the production of the left sensor element SE(1410) in connection with the left optical fiber LWL(4610) and to the production of the middle sensor element SE(1420) in connection with the middle optical fiber LWL(4630).

Figure 69

69 shows an exemplary, schematic and simplified device for controlling, measuring and evaluating exemplary sensor heads, such as the 54 to 68 show if they have a sensor element SE. The document presented here also refers to such devices as measuring devices.

The measuring device of the 69 comprises a sensor head which, for example, has a carrier substrate 1360 with an example tri-plate line 2380. The document presented here indicates that instead of the tri-plate line 2380, for example, other high-frequency strip lines such as microstrip lines 1380, or slot lines 1880 or differential microstrip line 6830 or differential triplate lines 7080 can be used.

The tri-plate line 2380 in the example 69 comprises a preferably not or only slightly electrically conductive, preferably dielectric carrier substrate 1360, typically an electrically conductive back contact 1370 (not shown here) on the underside of the electrically non-conductive carrier substrate 1360, an electrically conductive left signal ground surface 1310 on the top of the electrically non-conductive carrier substrate 1360, an electrically conductive right signal ground surface 1320 on the top side of the electrically non-conductive carrier substrate 1360, an electrically conductive signal line 1330 on the top of the electrically non-conductive carrier substrate 1360 between the electrically conductive left signal ground surface 1310 and the electrically conductive right signal ground surface 1320. An electrically essentially non-conductive left insulation gap 2340 separates the electrically conductive signal line 1330 from the electrically conductive left signal ground surface 1310. In addition, an electrically substantially non-conductive right insulation gap 2350 separates the electrically conductive signal line 1330 from the electrically conductive right signal ground surface 1320. Preferably, the tri-plate line 2380 points in relation to the electrically conductive signal line 1330 as the “hot” inner conductor and the community of electrically conductive left signal ground surface 1310, electrically conductive right signal ground surface 1320 and electrically conductive rear contact 1370 as ground electrodes have a wave resistance.

A microwave signal source µWG, for example, generates a microwave signal µW and feeds it into the wave line, here the exemplary tri-plate line 2380. The magnetic field with a magnetic flux density B _µW of the microwave field of the microwave signal µW acts on the sensor element SE. Preferably, the waveline, here the exemplary tri-plate line 2380, is terminated at its end facing away from the microwave signal source µWG without reflection by means of one or more terminating resistors 6710 with the characteristic impedance of the waveline, here the exemplary tri-plate line 2380, in the same amount or with one microwave-compatible coupling. These terminating resistors are in the 69 not shown, but part of the stress. By using terminating resistors 6710 at the end of the waveline facing away from the microwave signal source µWG, here the exemplary tri-plate line 2380, the end of the waveline facing away from the microwave signal source µWG, here the exemplary tri-plate line 2380, reflects of the wave line, here the end of the exemplary tri-plate line 2380, only a little power returns in the direction of the sensor element SE and microwave signal source µWG. By using terminating resistors 6710 at the end of the wave line facing away from the microwave signal source µWG, here the exemplary tri-plate line 2380, the microwave signal µW, which acts on the sensor element SE, can therefore be generated and controlled very precisely by the microwave signal source µWG. In addition, this construction avoids unnecessary heating of the sensor element SE and thus the carrier material TM. Preferably, the internal resistance of the microwave signal source µWG essentially corresponds to the characteristic impedance of the wave line, here the exemplary tri-plate line 2380. As a result, the microwave signal source µWG only reflects a small amount of power back in the direction of the sensor element SE and the terminating resistors 6710.

The sensor element SE typically comprises a large number of diamond nanocrystals ND and/or crystals in the solidified carrier material TM. One or more or all diamond nanocrystals ND of these diamond nanocrystals ND typically have one or more NV centers and/or one or more other paramagnetic centers. One or more or all of these crystals typically have one or more other paramagnetic centers. The NV centers of the sensor element SE and/or the other paramagnetic centers of the sensor element SE typically emit at least one fluorescent radiation FL when irradiated with pump radiation LB with a pump radiation wavelength λ _pmp . with a fluorescence radiation wavelength λ _fl .

The sensor element SE can, for example, be one or more of the 54 to 68 act as sensor elements SE shown.

The total magnetic flux density B _Σ flows through the sensor element SE. Typically, the total magnetic flux density B _Σ influences the intensity of the fluorescence radiation LB, which the NV centers of the sensor element SE and/or the other paramagnetic centers of the sensor element SE emit.

A light source LED serves as a pump radiation source for the pump radiation LB with the pump radiation wavelength λ _pmp . The pump radiation source, here the light source LED, irradiates the sensor element SE via an optical fiber LWL with the pump radiation LB of the pump radiation wavelength λ _pmp . The LED light source can be, for example, a light-emitting diode or a laser. A transmission signal S5 for modulating the light source LED preferably controls the intensity of the pump radiation LB emitted by the light source LED.

The transmission signal S5 is preferably amplitude-modulated over time with an LED modulation signal S5w. Typically, the time-modulated LED modulation signal of the transmission signal S5 has an LED modulation spectrum in the frequency range. For example, the LED modulation signal S5w can be a PWM modulation signal with a PWM period and a duty cycle. That can too LED modulation signal S5w is a spreading code signal based on a sequence of a first number of 1 bits and a second number of 0s, wherein the bits of the spreading code have a spreading code bit period duration and wherein the spreading -Code has a spreading code period duration. Typically, when using a spreading code, this spreading code is repeated in the LED modulation signal S5w. The first number of 1 spreading code bits in a spreading code is preferably, but not necessarily, equal to the second number of 0 spreading code bits in the spreading code. The spreading code can also be infinitely long and generated by a random number generator (abbreviation RNG), which can be part of the device. The random number generator (abbreviation RNG) can be a pseudo-random number generator (abbreviation PRNG), for example based on a linear feedback shift register (abbreviation LFSR) or a true random number generator (abbreviation TRNG) or a quantum random number generator (abbreviation QRNG).

Typically, the time course of the intensity of the pump radiation LB emitted by the light source LED has a pump radiation intensity spectrum, which is usually a more or less deformed LED modulation spectrum. The deformation usually results from the non-linear behavior of the LED light source. If the LED modulation signal is monofrequency, the time course of the intensity of the pump radiation LB emitted by the light source LED is usually also monofrequency with the same LED transmission frequency f _LED .

A first optical system (here F1, LWL) detects the pump radiation LB of the pump radiation source, here the light source LED, and transports the pump radiation LB to the one or more sensor elements SE of the sensor head and irradiates the sensor elements SE of the sensor head with this pump radiation LB. The first optical system preferably has an optical functional element, for example a coupling structure, for detecting the largest possible proportion of the pump radiation LB from the pump radiation source, here the light source LED. The first optical system preferably has an optical functional element, for example a decoupling structure, for irradiating the sensor element SE with the largest possible proportion of the pump radiation LB of the pump radiation source, here the light source LED, detected by the first optical functional element. In the example of the 69 An optical fiber LWL transports the pump radiation LB to the one or more sensor elements SE of the sensor head. Such a first optical system can include one or more optical functional elements, such as, for example, but not only lenses, prisms, diaphragms, filters, mirrors, beam splitters, dichroic mirrors, photonic crystals, optical fibers, etc.

The electromagnetic pump radiation LB with the pump radiation wavelength λ _pmp stimulates the NV centers or the paramagnetic centers in the sensor element SE to emit fluorescence radiation FL of the fluorescence wavelength λ _fl . Typically, the time course of the intensity of the fluorescence radiation FL emitted by the sensor element SE has a fluorescence radiation intensity spectrum. The fluorescence radiation intensity spectrum is usually a more or less deformed pump radiation intensity spectrum and therefore also a more or less deformed LED modulation spectrum. If the LED modulation signal is monofrequency, the time course of the intensity of the pump radiation LB emitted by the light source LED is usually also monofrequency with the LED modulation frequency f _LED and the time course of the intensity I (t) _is also that of the sensor element SE emitted fluorescent radiation FL monofrequency with the same LED transmission frequency fLED.

A second optical system (here F1, LWL) detects the fluorescence radiation FL of the sensor element SE and transports the fluorescence radiation FL to the one or more photodetectors PD and irradiates the one or more photodetectors PD with this fluorescence radiation FL. The second optical system preferably has an optical functional element, for example a coupling structure, for detecting the largest possible proportion of the fluorescent radiation FL of the sensor element SE. The second optical system preferably has an optical functional element, for example a decoupling structure, for irradiating the one or more photodetectors PD with the largest possible proportion of the fluorescent radiation FL of the sensor element SE detected by the second optical system. In the example of the 69 an optical waveguide LWL detects the fluorescent radiation LB and transports the detected fluorescent radiation LB to the one or more photodetectors PD. Typically, the second optical system comprises an optical functional element, for example a filter F1 and/or a dichroic mirror, which prevent pump radiation LB from reaching the one or more photodetectors PD. Such a second optical system can include one or more optical functional elements, such as, but not only, lenses, prisms, diaphragms, filters F1, mirrors, beam splitters, dichroic mirrors, photonic crystals, optical fibers, etc.

The first optical system and the second optical system are preferably identical to a large extent in their device parts.

In the example of the 69 the pump radiation source in the form of the light source LED emits the pump radiation LB with the pump radiation wavelength λ _pmp . A dichroic mirror F1 as a first exemplary part of the first optical system allows the pump radiation LB to pass through. An optical waveguide LWL as a second exemplary part of the first optical system receives the pump radiation LB at its first end and transports the pump radiation LB to the second end of the optical waveguide LWL. The pump radiation LB emerges from the optical waveguide LWL at the second end of the optical waveguide LWL and irradiates one or more sensor elements SE of the sensor head.

The pump radiation LB with the pump radiation wavelength λ _pmp thus irradiates the paramagnetic centers and/or the NV centers in the diamond nanocrystals ND or crystals of the one or more sensor elements SE. The NV centers and/or paramagnetic centers in the diamond nanocrystals ND irradiated in this way emit fluorescence radiation FL with a fluorescence wavelength λ _fl due to the irradiation with the pump radiation LB. The fluorescence wavelength λ _fl is typically different from the pump radiation wavelength λ _pmp . Typically, the fluorescence wavelength λ _fl is typically longer wavelength than the pump radiation wavelength λ _pmp . Typically, the intensity of the fluorescent radiation FL depends on the total magnetic flux density B _Σ , the microwave amplitude and the microwave frequency of the microwave signal µW and the intensity of the pump radiation LB.

Preferably, the optical waveguide LWL, as the first exemplary part of the second optical system, detects at its second end as large a proportion as possible of the emitted fluorescence radiation FL of the NV centers and/or the paramagnetic centers in the diamond nanocrystals ND of the one or more sensor elements SE . This requires good adjustment between the sensor element and the core of the optical fiber LWL. The sensor element SE is therefore preferably manufactured at the second end of the optical waveguide LWL by means of a self-adjusting process. The optical waveguide LWL transports the thus detected fluorescence radiation FL from the second end of the optical waveguide LWL to the first end of the optical waveguide LWL. An exemplary dichroic mirror F1 as a second exemplary optical functional element of the second optical system separates the fluorescence radiation FL from the pump radiation LB in that the dichroic mirror F1 essentially reflects the fluorescence radiation FL out of the beam path onto a photodetector PD and does not essentially reflect the pump radiation LB out of it Reflected narrowly.

Preferably, the second optical system thus comprises an optical functional element (F1) which allows or deflects the fluorescence radiation FL in the direction of the photodetector PD and which does not allow or deflect the pump radiation LB in the direction of the photodetector PD.

It is known from the prior art to modulate the amplitude of the microwave signal μW with a microwave modulation signal or, alternatively, the amplitude of the pump radiation LB with an LED modulation signal.

1. 1. die Intensität der Pumpstrahlung LB (Amplitudenmodulation) z.B. mittels eines LED-Modulationssignals S5w,
2. 2. die Intensität des Mikrowellensignal µW (Amplitudenmodulation) z.B. mittels eines Mikrowellenmodulationssignals S5m,
3. 3. die Frequenz des Mikrowellensignals µW (Frequenzmodulation) z.B. mittels eines Mikrowellenfrequenzsteuersignals,
4. 4. die Amplitude einer zusätzlichen, durch ein Magnetfelderzeugungsmittels Lc. erzeugten magnetischen Flussdichte B_ad z.B. mittels eines Kompensationsfeldsteuersignals.

The proposal presented here envisages modulating or setting at least two, preferably three or more, of the following parameters using a respective modulation signal:

1. 1. the intensity of the pump radiation LB (amplitude modulation), for example by means of an LED modulation signal S5w,
2. 2. the intensity of the microwave signal µW (amplitude modulation), for example by means of a microwave modulation signal S5m,
3. 3. the frequency of the microwave signal µW (frequency modulation), for example by means of a microwave frequency control signal,
4. 4. the amplitude of an additional magnetic field generating means Lc. generated magnetic flux density B _ad , for example by means of a compensation field control signal.

Each of these modulations is assigned one of 4 basic modulation frequencies.

Regarding 1. the modulation of the intensity of the pump radiation LB (amplitude modulation)

Preferably, a control device CTR of the device controls the intensity of the pump radiation LB, which is emitted by the pump radiation source, here the light source LED, by means of an LED modulation signal S5w. The LED modulation signal S5w is preferably modulated with an LED modulation spectrum. As a result, the temporal intensity profile of the pump radiation LB and the temporal intensity profile of the fluorescence radiation FL as well as the amplitude of the receiver output signal S0 of the photodetector PD are modulated with a more or less distorted LED modulation spectrum. The LED modulation signal S5w is preferably amplitude-modulated monofrequency with an LED modulation frequency f _LED . As a result, the temporal intensity profile of the pump radiation LB and the temporal intensity profile of the fluorescence radiation FL as well as the amplitude of the receiver output signal S0 of the photodetector PD are essentially amplitude modulated with the LED modulation frequency f _LED .

A modulation can be that the LED modulation signal S5w PWM-modulates the pump radiation source. It may make sense for the LED modulation signal S5w to temporarily switch off the pump radiation source, here the LED light source, completely during a PWM period and switch it on for the rest of the PWM period in question. Alternatively, it can make sense for the LED modulation signal S5w to temporarily reduce the emission intensity of the pump radiation source, here the light source LED, in a PWM period and to increase its emission intensity for the rest of the PWM period in question. In the case of using a spreading code, it can make sense if the LED modulation signal S5w completely switches off the pump radiation source, here the light source LED, when a logical 0 spreading code bit is present and the pump radiation source, here the light source LED The presence of a logical 1 spreading code bit switches on completely. In the case of using a spreading code, it may also make sense if the LED modulation signal S5w reduces the pump radiation source, here the light source LED, in its emission intensity in the presence of a logical 0 spreading code bit and the pump radiation source, here the light source LED increases in its emission intensity in the presence of a logical 1-spreading code bit.

Regarding 2. the modulation of the intensity of the microwave signal µW (amplitude modulation)

Preferably, the control device CTR of the device controls the amplitude of the microwave signal µW, which the microwave signal source µWG generates, by means of a microwave modulation signal S5m. The microwave modulation signal S5m is preferably modulated with a microwave modulation spectrum. As a result, the temporal intensity profile of the fluorescence radiation FL and the amplitude of the receiver output signal S0 of the photodetector PD are modulated with a more or less distorted microwave modulation spectrum in addition to being superimposed on the LED modulation spectrum. The microwave modulation signal S5m is preferably monofrequency amplitude modulated with a microwave modulation frequency f _µW . As a result, the time course of the intensity I _is (t) of the fluorescence radiation FL and the amplitude of the receiver output signal S0 of the photodetector PD are then typically amplitude modulated essentially with the microwave modulation frequency f _µW .

A modulation can be that the microwave modulation signal S5m PWM-modulates the amplitude of the microwave signal µW that the microwave signal source µWG generates. It may make sense for the microwave modulation signal S5m to temporarily switch the amplitude of the microwave signal µW, which the microwave signal source µWG generates, completely to zero in a PWM period and for the rest of the relevant PWM period this amplitude to an amount other than zero turns on. Alternatively, it can make sense for the microwave modulation signal S5m to temporarily reduce the amplitude of the microwave signal µW, which the microwave signal source µWG generates, in a PWM period and to increase its amplitude for the rest of the PWM period in question. If a spreading code is used, it can make sense if the microwave modulation signal S5m switches the amplitude of the microwave signal µW, which the microwave signal source µWG generates, completely to zero when a logical 0 spreading code bit is present and the amplitude of the microwave signal µW , which the microwave signal source µWG generates, switches on completely to an amplitude other than zero in the presence of a logical 1 spreading code bit. If a spreading code is used, it may also make sense if the microwave modulation signal S5m reduces the amplitude of the microwave signal µW, which the microwave signal source µWG generates, in the presence of a logical 0 spreading code bit and the amplitude of the microwave signal µW, which the microwave signal source µWG generates, increases in amplitude in the presence of a logical 1 spreading code bit.

Regarding 3. the modulation of the frequency of the microwave signal µW (frequency modulation)

Preferably, the control device CTR of the device controls the frequency of the microwave signal µW, which the microwave signal source µWG generates, for example via a data bus DB by means of a microwave frequency control signal. Preferably, the frequency modulation by the microwave frequency control signal via the data bus DB leads to a further microwave modulation spectrum with which the microwave signal μW is then modulated. As a result, the time course of the intensity I _is (t) of the fluorescence radiation FL and the amplitude of the receiver output signal S0 of the photodetector PD are modulated with a more or less distorted further microwave frequency modulation spectrum in addition to being superimposed on the LED modulation spectrum and the microwave modulation spectrum. For example, the microwave frequency of the microwave signal µW can be monofrequency frequency modulated with a microwave frequency modulation frequency f _fµW . Since the different microwave frequencies of the microwave signal µW result in different intensities I _is (t) of the fluorescence radiation FL, the time course of the intensity I _is (t) of the fluorescence radiation FL and the amplitude of the receiver output signal S0 of the photodetector PD are then essentially also modulated with the microwave frequency modulation frequency f _fµW .

Regarding 4. the modulation of the amplitude of an additional, by a magnetic field generating means Lc. generated magnetic flux density B _ad

Preferably, the control device CTR of the device controls the amplitude of an additional magnetic flux density B _ad , for example via a data bus DB by means of a compensation field control signal, which generates a magnetic field generating means Lc. The additional magnetic flux density B _ad contributes to the total magnetic flux density B _Σ . The total magnetic flux density B _Σ flows through the sensor element SE and therefore influences the intensity I _ist (t) of the fluorescent radiation FL. For this purpose of controlling the magnetic field generating means Lc, the control device CTR preferably controls a magnetic field controller LCTR via the data bus DB. The magnetic field controller LCTR typically controls a driver stage DRVL for supplying the magnetic field generating means Lc with electrical energy and/or for controlling the magnetic field generating means Lc. The control device CTR thus modulates the amplitude of the additional magnetic flux density B _ad , which the magnetic field generating means Lc generates as a function of the compensation field control signal, via the magnetic field controller LCTR and the driver stage DRLV by means of the compensation field control signal sent, for example, via the data bus DB.

For example, the compensation field control signal can be modulated with a magnetic field modulation spectrum. As a result, the additional magnetic flux density B _ad , which the magnetic field generating means Lc generates as a function of the compensation field control signal, can be amplitude modulated with the magnetic field modulation spectrum. The additional magnetic flux density B _ad is superimposed on other magnetic flux densities from other sources to form the total magnetic flux density B _Σ . As a result, the total magnetic flux density B _Σ , which flows through the sensor element SE, is typically also essentially modulated with the magnetic field modulation spectrum.

The intensity I _is (t) of the fluorescence radiation FL depends, among other things, on the amplitude of the total magnetic flux density Bε. As a result, the time course of the intensity of the fluorescence radiation FL and, ultimately, also the amplitude of the receiver output signal S0 of the photodetector PD can essentially be modulated with a more or less distorted magnetic field modulation spectrum in addition to the LED modulation spectrum and the microwave modulation spectrum and the microwave frequency modulation spectrum.

If the compensation field control signal is applied periodically, it is preferably modulated monofrequency with a magnetic field modulation frequency f _mg . Since the different total magnetic flux densities B _Σ result in different intensities of the fluorescence radiation FL, the time course of the intensity I _is (t) of the fluorescence radiation FL and the amplitude of the receiver output signal S0 of the photodetector PD are also modulated with the magnetic field modulation frequency f _mg .

In this configuration, there are 2 ⁴ =16 mixed frequencies with which the receiver output signal S0 of the photodetector PD can be modulated.

Preferably, the magnetic field modulation frequency f _mg , the microwave frequency modulation frequency f _fµW , the microwave modulation frequency f _µW and the LED modulation frequency f _LED are selected so that preferably all mixed frequencies differ.

This can be achieved, for example, in that a second modulation fundamental frequency has twice the frequency value of a first modulation fundamental frequency and a third modulation fundamental frequency has four times the frequency value of the first modulation fundamental frequency and a fourth modulation fundamental frequency has eight times the frequency value of the first modulation fundamental frequency.

For example, to give an arbitrary example here, it is conceivable that the microwave modulation frequency f _µW has eight times the frequency value of the magnetic field modulation frequency f _mg and that the LED modulation frequency f _LED has four times the frequency value of the magnetic field modulation frequency f _mg and that the microwave frequency modulation frequency f _fµW has twice the frequency value of the magnetic field modulation frequency f _mg .

Case with a fundamental modulation frequency (microwave modulation frequency)

It is known from the prior art to operate the device with only one basic modulation frequency different from 0Hz and to set the other values of the other basic modulation frequencies to quasi-static values for the duration of a measurement. The document presented here presents an example below.

1. 1. über den Datenbus DB mittels Steuerung des ersten Signalgenerators G1 eine Modulation der Intensität der Pumpstrahlung LB (Amplitudenmodulation) quasistatisch, also mit einer mit einer LED-Modulationsfrequenz f_LED =0Hz, einstellt und
2. 2. gleichzeitig über den Datenbus DB mittels Steuerung des zweiten Signalgenerators G2 eine Modulation der Intensität des Mikrowellensignals µW (Amplitudenmodulation) mit einer Mikrowellenmodulationsfrequent f_µW vornimmt und
3. 3. die Mikrowellenfrequenz des Mikrowellensignals µW den Datenbus DB in der Mikrowellensignalquelle µWG quasistatisch, also mit einer Mikrowellenfrequenzmodulationsfrequenz f_fµW=0Hz, einstellt und
4. 4. den Wert des Kompensationsfeldsteuersignals auf einen quasistatischen Wert, d.h. auf eine Magnetfeldmodulationsfrequenz f_mg=0Hz, und damit auf eine quasistatische, durch die Steuervorrichtung CTR eingestellte Amplitude einer zusätzlichen magnetischen Flussdichte B_ad, einstellt, die das Magnetfelderzeugungsmittel Lc erzeugt,

If the control device CTR of the device, for example

1. 1. sets a quasi-static modulation of the intensity of the pump radiation LB (amplitude modulation) via the data bus DB by controlling the first signal generator G1, i.e. with an LED modulation frequency f _LED =0Hz, and
2. 2. Simultaneously modulate the intensity of the microwave signal µW (amplitude modulation) with a microwave modulation frequency f _µW via the data bus DB by controlling the second signal generator G2 and
3. 3. the microwave frequency of the microwave signal µW sets the data bus DB in the microwave signal source µWG quasi-statically, i.e. with a microwave frequency modulation frequency f _fµW =0Hz, and
4. 4. sets the value of the compensation field control signal to a quasi-static value, ie to a magnetic field modulation frequency f _mg =0Hz, and thus to a quasi-static amplitude of an additional magnetic flux density B _ad , set by the control device CTR, which the magnetic field generating means Lc generates,

This results in exactly one mixed frequency with which the receiver output signal S0 of the photodetector PD can be modulated.

In this example, a first signal generator G1 generates the quasi-static LED modulation signal S5w, with an LED modulation frequency f _LED =0Hz, typically in accordance with a default value that the control device CTR has set in the first signal generator G1 via the data bus DB. The control device CTR preferably controls the first signal generator G1 via the exemplary data bus DB.

A light source driver LDRV for the light source LED typically generates the quasi-static transmission signal S5 from the LED modulation signal S5w, with which the light source driver LDRV preferably also supplies the light source LED with electrical energy. The light source LED is preferably a semiconductor light source such as a laser or an LED. Very particularly preferably, the light source LED comprises a silicon LED and/or a silicon avalanche LED, which means that this part of the device can also be integrated into CMOS.

The light source LED then emits the pump radiation LB depending on the transmission signal S5. with the pump radiation wavelength λ _pmp .

The receiver output signal S0 and the amplified receiver output signal S1 are then not modulated with an LED modulation spectrum because of the LED modulation frequency f _LED =0Hz.

In this example the 69 A second signal generator G2 generates the microwave modulation signal S5m, in particular with a microwave modulation frequency f _µW , typically in accordance with a default value that the control device CTR has set in the second signal generator G2 via the data bus DB. Typically, the second signal generator G2 modulates the microwave modulation signal S5m with said microwave modulation spectrum and/or with said microwave modulation frequency f _µW . Most preferably, the microwave modulation of the microwave modulation signal S5m is a PWM modulation with a PWM frequency or a bit stream of a spreading code signal with a spreading code period duration and a spreading code bit frequency. The control device CTR preferably controls the second signal generator G2 via the exemplary data bus DB.

The microwave signal source µWG then generates the microwave signal µW modulated with the microwave modulation signal. The control device CTR preferably controls the microwave signal source μWG via the exemplary data bus DB.

Since the microwave modulation signal S5m is modulated with a microwave modulation spectrum, the microwave signal μW is then also amplitude modulated with the microwave modulation spectrum. Therefore, the time course of the intensity of the fluorescence radiation FL is then typically modulated with the microwave modulation spectrum. Therefore, the receiver output signal S0 and the amplified receiver output signal S1 are also modulated with the microwave modulation spectrum.

Typically, an optional first amplifier V1 amplifies the receiver output signal S0 of the photodetector PD to an amplified receiver output signal S1. Preferably, the transfer function of the first amplifier V1 for the amplification of the receiver output signal S0 to the amplified receiver output signal S1 has a filter property which is typically selected such that the first amplifier V1 essentially only transmits modulated signal components of the receiver output signal S0 with a frequency f≠0Hz to the amplified receiver output signal S1 amplifies and essentially only signal components of the receiver output signal S0 with a frequency f <f _max are amplified to the amplified receiver output signal S1. In this case, f _max is preferably a maximum frequency whose frequency absolute value is preferably greater than the frequency absolute value of that mixed frequency with the largest frequency absolute value.

Preferably, the first amplifier V1 or the device includes an analog-to-digital conversion ADC, so that the amplified receiver output signal S1 can be a digitized receiver output signal S1.

The control device CTR can use the multiple correlator LIV 69 emulate the device in various forms.

The multiple correlator LIV der 69 The amplified receiver output signal S1 or the digitized receiver output signal S1 typically correlates with the microwave signal μW in this operating mode.

If the multiple correlator LIV correlates the amplified receiver output signal S1 or the digitized receiver output signal S1 with a signal s1(t), the multiple correlator LIV essentially calculates the following correlation integral: $$S4\left(t\right)={\displaystyle \underset{0}{\overset{2\pi }{\int }}S1\left(t\right)}\cdot s1\left(t\right)dt$$

Here, the angle 2π refers to the period of the periodic signal s1(t).

$$S{4}_b\left(t\right)={\displaystyle \underset{0}{\overset{2\pi }{\int }}S1\left(t\right)}\cdot S5mq\left(t\right)dt$$

In the example of the 69 The multiple correlator LIV preferably correlates the amplified receiver output signal S1 or the digitized receiver output signal S1 with the microwave modulation signal S5m(t). The multiple correlator LIV essentially calculates the following correlation integral as the L2 product of the receiver output signal S1(t) or the digitized receiver output signal S1(t) and the microwave modulation signal S5m(t): $$S{4}_a\left(t\right)={\displaystyle \underset{0}{\overset{2\pi }{\int }}S1\left(t\right)}\cdot \mathrm{<figure-callout\; id="5m"\; label="S"\; filenames="DE102023122657A1\_0109.png"\; state="\{\{state\}\}">S</figure-callout>}5m\left(t\right)dt$$

$$S{4}_b\left(t\right)={\displaystyle \underset{0}{\overset{2\pi }{\int }}S1\left(t\right)}\cdot \mathrm{<figure-callout\; id="5m"\; label="S"\; filenames="DE102023122657A1\_0109.png"\; state="\{\{state\}\}">S</figure-callout>}5mq\left(t\right)dt$$

Here, the angle 2π refers to the period of the periodic signal S5m(t). The signal SSmq is typically the inverted signal of the microwave modulation signal S5m.

Preferably, the microwave modulation signal S5m(t) is a digital signal that can assume the logic 1 level and the logic 0 level.

In the extreme case of the microwave modulation signal S5m(t), at a logical 1 level of the microwave modulation signal S5m(t), according to the arbitrary definition of the document presented here, the microwave signal source µWG should switch on a microwave signal µW with the amplitude preset via the data bus DB and the preset microwave frequency ω _µW and generate and at a logical 0 level of the microwave modulation signal S5m(t), the microwave signal source µWG generates a microwave signal with the amplitude 0 and thus switches off the microwave signal µW.

At a logical 1 level of the microwave modulation signal S5m(t), according to the arbitrary definition of the document presented here, the microwave signal source µWG should switch on and generate a microwave signal µW with the increased amplitude preset via the data bus DB and the preset microwave frequency ω _µW and at a logical 0- Level microwave modulation signal S5m(t), the microwave signal source µWG generates (switches off) a microwave signal with the lower amplitude preset via the data bus DB and the preset microwave frequency ω _µW .

In the case that the microwave modulation signal S5m(t) is such a digital signal, an inverted microwave modulation signal S5mq(t) can be defined as an inverted signal of the microwave modulation signal S5m(t).

The filter output signal S4(t) then typically indicates the proportion in the amplified receiver output signal S1 or in the digitized receiver output signal S1 that is due to the microwave radiation of the microwave signal μW into the sensor element SE.

Case with a basic modulation frequency (LED modulation frequency)

It is known from the prior art to operate the device with only one basic modulation frequency different from 0Hz and to set the other values of the other basic modulation frequencies to quasi-static values for the duration of a measurement. The document presented here presents an example below.

1. 1. über den Datenbus DB mittels Steuerung des ersten Signalgenerators G1 eine Modulation der Intensität der Pumpstrahlung LB (Amplitudenmodulation), also mit einer mit einer LED-Modulationsfrequenz f_LED vornimmt und
2. 2. gleichzeitig über den Datenbus DB mittels Steuerung des zweiten Signalgenerators G2 eine Modulation der Intensität des Mikrowellensignals µW (Amplitudenmodulation) quasistatisch, also mit einer Mikrowellenmodulationsfrequenz f_µW=0 Hz vornimmt und
3. 3. die Mikrowellenfrequenz des Mikrowellensignals µW den Datenbus DB in der Mikrowellensignalquelle µWG quasistatisch, also mit einer Mikrowellenfrequenzmodulationsfrequenz f_fµW=0Hz, einstellt und
4. 4. den Wert des Kompensationsfeldsteuersignals auf einen quasistatischen Wert, d.h. auf eine Magnetfeldmodulationsfrequenz f_mg=0Hz, und damit auf eine quasistatische, durch die Steuervorrichtung CTR eingestellte Amplitude einer zusätzlichen magnetischen Flussdichte B_ad, einstellt, die das Magnetfelderzeugungsmittel Lc erzeugt,

If the control device CTR of the device, for example

1. 1. modulate the intensity of the pump radiation LB (amplitude modulation), i.e. with an _LED with an LED modulation frequency f, via the data bus DB by controlling the first signal generator G1 and
2. 2. Simultaneously modulate the intensity of the microwave signal µW (amplitude modulation) quasi-statically, i.e. with a microwave modulation frequency f _µW =0 Hz, via the data bus DB by controlling the second signal generator G2 and
3. 3. the microwave frequency of the microwave signal µW sets the data bus DB in the microwave signal source µWG quasi-statically, i.e. with a microwave frequency modulation frequency f _fµW =0Hz, and
4. 4. sets the value of the compensation field control signal to a quasi-static value, ie to a magnetic field modulation frequency f _mg =0Hz, and thus to a quasi-static amplitude of an additional magnetic flux density B _ad , set by the control device CTR, which the magnetic field generating means Lc generates,

This results in exactly one mixed frequency with which the receiver output signal S0 of the photodetector PD can be modulated.

In this example, a first signal generator G1 generates the quasi-static LED modulation signal S5w, with one of the LED modulation frequency f _LED typically corresponding to a default value that the control device CTR has set in the first signal generator G1 via the data bus DB. The control device CTR preferably controls the first signal generator G1 via the exemplary data bus DB. Typically, the first signal generator G1 modulates the LEED modulation signal S5w with said LED modulation spectrum and/or with said LED modulation frequency f _LED . Most notably The LED modulation of the LED modulation signal S5w is preferably a PWM modulation with a PWM frequency or a bit stream of a spreading code signal with a spreading code period duration and a spreading code bit frequency. The control device CTR preferably controls the first signal generator G1 via the exemplary data bus DB.

A light source driver LDRV for the light source LED typically generates the transmission signal S5 from the LED modulation signal S5w, with which the light source driver LDRV preferably also supplies the light source LED with electrical energy. The light source LED is preferably a semiconductor light source such as a laser or an LED. Very particularly preferably, the light source LED comprises a silicon LED and/or a silicon avalanche LED, which means that this part of the device can also be integrated into CMOS.

The light source LED then emits the pump radiation LB depending on the transmission signal S5. with the pump radiation wavelength λ _pmp .

The receiver output signal S0 and the amplified receiver output signal S1 are then modulated with an LED modulation spectrum.

Since the LED modulation signal S5w is modulated with an LED modulation spectrum, the transmission signal S5 is then also amplitude modulated with the LED modulation spectrum. Therefore, the time course of intensity I _ist (t) of the fluorescence radiation FL is then typically modulated with the LED modulation spectrum. Therefore, the receiver output signal S0 and the amplified receiver output signal S1 are also modulated with the LED modulation spectrum.

In this example the 69 A second signal generator G2 generates the microwave modulation signal S5m, in particular with a microwave modulation frequency f _µW =0Hz, typically in accordance with a default value that the control device CTR has set in the second signal generator G2 via the data bus DB. Typically, the second signal generator G2 modulates the microwave modulation signal S5m with said microwave modulation spectrum and/or with said microwave modulation frequency f _µW =0Hz. The control device CTR preferably controls the second signal generator G2 via the exemplary data bus DB.

The microwave signal source µWG then generates the unmodulated microwave signal µW. The control device CTR preferably controls the microwave signal source μWG via the exemplary data bus DB.

Typically, an optional first amplifier V1 amplifies the receiver output signal S0 of the photodetector PD to an amplified receiver output signal S1. Preferably, the transfer function of the first amplifier V1 for the amplification of the receiver output signal S0 to the amplified receiver output signal S1 has a filter property which is typically selected such that the first amplifier V1 essentially only transmits modulated signal components of the receiver output signal S0 with a frequency f≠0Hz to the amplified receiver output signal S1 amplifies and essentially only signal components of the receiver output signal S0 with a frequency f <f _max are amplified to the amplified receiver output signal S1. In this case, f _max is preferably a maximum frequency whose frequency absolute value is preferably greater than the frequency absolute value of that mixed frequency with the largest frequency absolute value.

Preferably, the first amplifier V1 or the device includes an analog-to-digital conversion ADC, so that the amplified receiver output signal S1 can be a digitized receiver output signal S1.

The control device CTR can use the multiple correlator LIV 69 emulate the device in various forms.

The multiple correlator LIV der 69 In this operating mode, the amplified receiver output signal S1 or the digitized receiver output signal S1 typically correlates with the LED modulation signal S5w.

If the multiple correlator LIV correlates the amplified receiver output signal S1 or the digitized receiver output signal S1 with a signal s1(t), the multiple correlator LIV essentially calculates the following correlation integral: $$S4\left(t\right)={\displaystyle \underset{0}{\overset{2\pi }{\int }}S1\left(t\right)}\cdot s1\left(t\right)dt$$

$$S{4}_b\left(t\right)={\displaystyle \underset{0}{\overset{2\pi }{\int }}S1\left(t\right)}\cdot S5wq\left(t\right)dt$$

Here, the angle 2π refers to the period of the periodic signal s1(t). In the example of the 69 The multiple correlator LIV preferably correlates the amplified receiver output signal S1 or the digitized receiver output signal S1 with the LED modulation signal S5w(t). The multiple correlator LIV essentially calculates the following correlation integral as the L2 product of the receiver output signal S1(t) or the digitized receiver output signal S1(t) and the LED modulation signal S5w(t): $$S{4}_a\left(t\right)={\displaystyle \underset{0}{\overset{2\pi }{\int }}S1\left(t\right)}\cdot \mathrm{<figure-callout\; id="5w"\; label="S"\; filenames="DE102023122657A1\_0034.png,DE102023122657A1\_0097.png"\; state="\{\{state\}\}">S</figure-callout>}5w\left(t\right)dt$$

$$S{4}_b\left(t\right)={\displaystyle \underset{0}{\overset{2\pi }{\int }}S1\left(t\right)}\cdot \mathrm{<figure-callout\; id="5w"\; label="S"\; filenames="DE102023122657A1\_0034.png,DE102023122657A1\_0097.png"\; state="\{\{state\}\}">S</figure-callout>}5wq\left(t\right)dt$$

Here, the angle 2π refers to the period of the periodic signal S5m(t). The signal S5wq is typically the inverted signal of the LED modulation signal S5w.

The LED modulation signal S5w(t) is preferably a digital signal that can assume the logic 1 level and the logic 0 level.

In the extreme case of the LED modulation signal S5w(t), at a logical 1 level of the LED modulation signal S5w(t), according to the arbitrary definition of the document presented here, the light source LED should switch on and generate the pump radiation LB with the amplitude preset via the data bus DB and when the LED modulation signal S5w(t) has a logical 0 level, the light source LED should generate the pump radiation LB with the amplitude 0 and thus switch off the pump radiation LB.

At a logical 1 level of the LED modulation signal S5w(t), according to the arbitrary definition of the document presented here, the light source LED should switch on and generate the pump radiation LB with the increased amplitude preset via the data bus DB and at a logical 0 level of the LED Modulation signal S5w(t), the light source LED generates (switches off) a pump radiation LB with the lower amplitude preset via the data bus DB.

In the case that the LED modulation signal S5w(t) is such a digital signal, an inverted LED modulation signal S5wq(t) can be defined as an inverted signal of the LED modulation signal S5w(t).

The filter output signal S4(t) then typically indicates the proportion in the amplified receiver output signal S1 or in the digitized receiver output signal S1 that is due to the irradiation of the pump radiation LB into the sensor element SE.

Case with two fundamental modulation frequencies

It is conceivable and new compared to the prior art to operate the device with two basic modulation frequencies different from 0Hz instead of just one and to set the other values to quasi-static values for the duration of a measurement. In the following, the document presented here presents a preferred example without limiting the disclosure thereto.

1. 1. über den Datenbus DB mittels Steuerung des ersten Signalgenerators G1 eine Modulation der Intensität der Pumpstrahlung LB (Amplitudenmodulation) mit einer LED-Modulationsfrequenz f_LED einstellt und
2. 2. gleichzeitig über den Datenbus DB mittels Steuerung des zweiten Signalgenerators G2 eine Modulation der Intensität des Mikrowellensignals µW (Amplitudenmodulation) mit einer Mikrowellenmodulationsfrequenz f_µW vornimmt und
3. 3. die Mikrowellenfrequenz des Mikrowellensignals µW den Datenbus DB in der Mikrowellensignalquelle µWG quasistatisch, also mit einer Mikrowellenfrequenzmodulationsfrequenz f_fµW=0Hz, einstellt und
4. 4. den Wert des Kompensationsfeldsteuersignals auf einen quasistatischen Wert, d.h. auf eine Magnetfeldmodulationsfrequenz f_mg=0Hz, und damit auf eine quasistatische, durch die Steuervorrichtung CTR eingestellte Amplitude einer zusätzlichen magnetischen Flussdichte B_ad, einstellt, die das Magnetfelderzeugungsmittel Lc erzeugt,

If the control device CTR of the device, for example

1. 1. sets a modulation of the intensity of the pump radiation LB (amplitude modulation) with an LED modulation frequency f _LED via the data bus DB by controlling the first signal generator G1 and
2. 2. Simultaneously modulate the intensity of the microwave signal µW (amplitude modulation) with a microwave modulation frequency f _µW via the data bus DB by controlling the second signal generator G2 and
3. 3. the microwave frequency of the microwave signal µW sets the data bus DB in the microwave signal source µWG quasi-statically, i.e. with a microwave frequency modulation frequency f _fµW =0Hz, and
4. 4. sets the value of the compensation field control signal to a quasi-static value, ie to a magnetic field modulation frequency f _mg =0Hz, and thus to a quasi-static amplitude of an additional magnetic flux density B _ad , set by the control device CTR, which the magnetic field generating means Lc generates,

This now results in 2 ² =4 mixed frequencies with which the receiver output signal S0 of the photodetector PD can be modulated.

In this configuration, the magnetic field modulation frequency f _mg is preferably set such that the magnetic field modulation frequency f _mg =0Hz.

In this configuration, the microwave frequency modulation frequency f _fµW is preferably set such that the microwave frequency modulation frequency f _fµW =0Hz.

Preferably, the microwave modulation frequency f _µW and the LED modulation frequency f _LED are now selected so that these four mixed frequencies preferably differ.

This can be achieved, for example, in that a second basic modulation frequency has twice the frequency value of a first basic modulation frequency, these two basic modulation frequencies ω _µW and ω _LED .

For example, to give an arbitrary example here, it is conceivable that the microwave modulation frequency f _µW has twice the frequency value of the LED modulation frequency f _LED .

In this example of this configuration, the first signal generator G1 generates the LED modulation signal S5W, with one of the LED modulation frequency f _LED typically corresponding to a non-zero default value that the control device CTR has set in the first signal generator G1 via the data bus DB. Typically, the first signal generator G1 modulates the LED modulation signal S5W with said LED modulation spectrum and/or with said LED modulation frequency f _LED . Very particularly preferably, the LED modulation of the LED modulation signal SSW is a PWM modulation with a PWM frequency or a bit stream of a spreading code signal with a spreading code period duration and a spreading code Bit frequency. The control device CTR preferably controls the first signal generator G1 via the exemplary data bus DB.

A light source driver LDRV for the light source LED typically generates the transmission signal S5 from the LED modulation signal SSW, with which the light source driver LDRV preferably also supplies the light source LED with electrical energy. The light source LED is preferably a semiconductor light source such as a laser or an LED. Very particularly preferably, the light source LED comprises a silicon LED and/or a silicon avalanche LED, which means that this part of the device can also be integrated into CMOS.

The light source LED then emits the pump radiation LB depending on the transmission signal S5. with the pump radiation wavelength λ _pmp .

Since the LED modulation signal S5w is modulated with an LED modulation spectrum, the transmission signal S5 is then also modulated with the LED modulation spectrum. Since the transmission signal S5 is modulated with the LED modulation spectrum, the time course of the intensity of the pump radiation LB is typically modulated with the LED modulation spectrum. Therefore, the time course of the intensity I _ist (t) of the fluorescent radiation FL is then typically modulated with the LED modulation spectrum. Therefore, the receiver output signal S0 and the amplified receiver output signal S1 are typically modulated with the LED modulation spectrum.

In this example the 69 In this configuration, the second signal generator G2 generates the microwave modulation signal S5m, in particular with a non-zero microwave modulation frequency f _µW , typically in accordance with a default value that the control device CTR has set in the second signal generator G2 via the data bus DB. Typically, the second signal generator G2 modulates the microwave modulation signal S5m with said microwave modulation spectrum and/or with said microwave modulation frequency f _µW . Very particularly preferably, the microwave modulation of the microwave modulation signal S5m is a PWM modulation with a PWM frequency or a bit stream of a spreading code signal with a spreading code Period length and a spreading code bit frequency. The control device CTR preferably controls the second signal generator G2 via the exemplary data bus DB.

The microwave signal source µWG then generates the microwave signal µW modulated with the microwave modulation signal. The control device CTR preferably controls the microwave signal source μWG via the exemplary data bus DB.

Since the microwave modulation signal S5m is modulated with a microwave modulation spectrum, the microwave signal μW is then typically also amplitude modulated with the microwave modulation spectrum. Therefore, the time course of the intensity of the fluorescence radiation FL is then typically modulated with the microwave modulation spectrum. Therefore, the receiver output signal S0 and the amplified receiver output signal S1 are then typically modulated with the microwave modulation spectrum.

Typically, the optional first amplifier V1 amplifies the receiver output signal S0 of the photodetector PD to an amplified receiver output signal S1. Preferably, the transfer function of the first amplifier V1 for the amplification of the receiver output signal S0 to the amplified receiver output signal S1 has a filter property which is typically selected such that the first amplifier V1 essentially only transmits modulated signal components of the receiver output signal S0 with a frequency f≠0Hz to the amplified receiver output signal S1 amplifies and essentially only signal components of the receiver output signal S0 with a frequency f <f _max are amplified to the amplified receiver output signal S1. In this case, f _max is preferably a maximum frequency whose frequency absolute value is preferably greater than the frequency absolute value of that mixed frequency with the largest frequency absolute value.

Preferably, the first amplifier V1 or the device includes an analog-to-digital conversion ADC, so that the amplified receiver output signal S1 can be a digitized receiver output signal S1.

The control device CTR can use the multiple correlator LIV 69 emulate the device in various forms.

1. 1. dem LED-Modulationssignal S5w,
2. 2. dem Mikrowellensignal µW.

The multiple correlator LIV der 69 The amplified receiver output signal S1 or the digitized receiver output signal S1 preferably correlates with the at least two following signals:

1. 1. the LED modulation signal S5w,
2. 2. the microwave signal µW.

If the multiple correlator LIV correlates the amplified receiver output signal S1 or the digitized receiver output signal S1 with two signals s1(t) and s2(t), the multiple correlator LIV essentially calculates, for example, the following correlation integral: $$S4\left(t\right)={\displaystyle \underset{0}{\overset{2\pi }{\int }}S1\left(t\right)}\cdot s1\left(t\right)\cdot s2\left(t\right)dt$$

DFINITION: The document presented here now refers to this mathematical form as an L3 product (for three functions) based on the well-known L2 product.

Here, the angle 2π refers to the period of the periodic signal s1(t) or s2(t) with the longer period. The prerequisite is that the period of the signal with the longer period is an integer multiple of the period of the signal with the shorter period.

In the example of the 69 The multiple correlator LIV correlates the amplified receiver output signal S1 or the digitized receiver output signal S1 preferably with the LED modulation signal S5w(t) and the microwave modulation signal S5m(t). The multiple correlator LIV essentially calculates the following correlation integral as the L3 product of the receiver output signal S1(t) or the digitized receiver output signal S1(t), the LED modulation signal S5w(t) and the microwave modulation signal S5m(t): $$S4\left(t\right)={\displaystyle \underset{0}{\overset{2\pi }{\int }}S1\left(t\right)}\cdot \mathrm{<figure-callout\; id="5w"\; label="S"\; filenames="DE102023122657A1\_0034.png,DE102023122657A1\_0097.png"\; state="\{\{state\}\}">S</figure-callout>}5w\left(t\right)\cdot \mathrm{<figure-callout\; id="5m"\; label="S"\; filenames="DE102023122657A1\_0109.png"\; state="\{\{state\}\}">S</figure-callout>}5m\left(t\right)dt$$

Here, the angle 2π refers to the period of the periodic signal S5m(t) or S5w(t) with the longer period. The preferred requirement is that the period duration of the signal with the longer period duration is an integer multiple of the period duration of the signal with the shorter period duration.

The LED modulation signal S5w(t) is preferably a digital signal that can assume the logic 1 level and the logic 0 level.

In the extreme case of the LED modulation signal S5w(t), at a logical 1 level of the LED modulation signal S5w(t), the light source driver LDRV for the light source LED should, according to the arbitrary definition of the document presented here, emit a pump radiation LB through the pump radiation source, here the Switch on the LED light source and switch off the pump radiation source, here the LED light source, when the LED modulation signal S5w(t) has a logical 0 level.

If the LED modulation signal S5w(t) has a logical 1 level, according to the arbitrary definition of the document presented here, the light source driver LDRV for the light source LED should cause the pump radiation source, here the light source LED, to emit an increased intensity of the pump radiation LB and at a Logical 0 level of the LED modulation signal S5w(t) causes the pump radiation source, here the light source LED, to emit a reduced intensity of the pump radiation LB.

The microwave modulation signal S5m(t) is preferably a digital signal that can assume the logic 1 level and the logic 0 level.

In the extreme case of the microwave modulation signal S5m(t), at a logical 1 level of the microwave modulation signal S5m(t), according to the arbitrary definition of the document presented here, the microwave signal source µWG should switch on and generate a microwave signal with the amplitude preset via the data bus DB and the preset microwave frequency and At a logical 0 level of the microwave modulation signal S5m(t), the microwave signal source µWG generates a microwave signal with the amplitude 0 and thus switches off the microwave signal µW.

At a logical 1 level of the microwave modulation signal S5m(t), according to the arbitrary definition of the document presented here, the microwave signal source µWG should switch on and generate a microwave signal with the increased amplitude preset via the data bus DB and the preset microwave frequency ω _µW and at a logical 0 level Microwave modulation signal S5m(t), the microwave signal source µWG generates (switches off) a microwave signal with the lower amplitude preset via the data bus DB and the preset microwave frequency ω _µW .

In the case that the microwave modulation signal S5m(t) is such a digital signal, an inverted microwave modulation signal S5mq(t) can be defined as an inverted signal of the microwave modulation signal S5m(t).

In the case that the LED modulation signal S5w(t) is such a digital signal, an inverted LED modulation signal S5wq(t) can be defined as an inverted signal of the LED modulation signal S5w(t).

$$S{4}_b\left(t\right)={\displaystyle \underset{0}{\overset{2\pi }{\int }}S1\left(t\right)}\cdot S5wq\left(t\right)\cdot \text{S5}m\left(t\right)dt$$

$$S{4}_c\left(t\right)={\displaystyle \underset{0}{\overset{2\pi }{\int }}S1\left(t\right)}\cdot S5w\left(t\right)\cdot S\text{5}mq\left(t\right)dt$$

$$S{4}_d\left(t\right)={\displaystyle \underset{0}{\overset{2\pi }{\int }}S1\left(t\right)}\cdot S5wq\left(t\right)\cdot S\text{5}mq\left(t\right)dt$$

Overall, the multiple correlator LIV can then form four L3 products in the form of four filter output signals S4(t) from the amplified receiver output signal S1, microwave modulation signal S5m(t) and the LED modulation signal S5w(t): $$S{4}_a\left(t\right)={\displaystyle \underset{0}{\overset{2\pi }{\int }}S1\left(t\right)}\cdot \mathrm{<figure-callout\; id="5w"\; label="S"\; filenames="DE102023122657A1\_0034.png,DE102023122657A1\_0097.png"\; state="\{\{state\}\}">S</figure-callout>}5w\left(t\right)\cdot \mathrm{<figure-callout\; id="5m"\; label="S"\; filenames="DE102023122657A1\_0109.png"\; state="\{\{state\}\}">S</figure-callout>}\text{5}m\left(t\right)dt$$

$$S{4}_b\left(t\right)={\displaystyle \underset{0}{\overset{2\pi }{\int }}S1\left(t\right)}\cdot \mathrm{<figure-callout\; id="5w"\; label="S"\; filenames="DE102023122657A1\_0034.png,DE102023122657A1\_0097.png"\; state="\{\{state\}\}">S</figure-callout>}5wq\left(t\right)\cdot \text{S5}m\left(t\right)dt$$

$$S{4}_c\left(t\right)={\displaystyle \underset{0}{\overset{2\pi }{\int }}S1\left(t\right)}\cdot \mathrm{<figure-callout\; id="5w"\; label="S"\; filenames="DE102023122657A1\_0034.png,DE102023122657A1\_0097.png"\; state="\{\{state\}\}">S</figure-callout>}5w\left(t\right)\cdot \mathrm{<figure-callout\; id="5m"\; label="S"\; filenames="DE102023122657A1\_0109.png"\; state="\{\{state\}\}">S</figure-callout>}\text{5}mq\left(t\right)dt$$

$$S{4}_d\left(t\right)={\displaystyle \underset{0}{\overset{2\pi }{\int }}S1\left(t\right)}\cdot \mathrm{<figure-callout\; id="5w"\; label="S"\; filenames="DE102023122657A1\_0034.png,DE102023122657A1\_0097.png"\; state="\{\{state\}\}">S</figure-callout>}5wq\left(t\right)\cdot \mathrm{<figure-callout\; id="5m"\; label="S"\; filenames="DE102023122657A1\_0109.png"\; state="\{\{state\}\}">S</figure-callout>}\text{5}mq\left(t\right)dt$$

The first filter output signal S4 _a (t) formed in this way indicates the intensity of the fluorescence radiation FL when the pump radiation LB is switched on and the microwave signal μW is switched on.

The second filter output signal S4 _b (t) formed in this way indicates the intensity of the fluorescent radiation FL when the pump radiation LB is switched off and the microwave signal μW is switched on. Since no fluorescence radiation FL occurs due to the missing pump radiation LB, this second filter output signal S4 _b (t) formed in this way represents the radiation background which is present for whatever reason.

The third filter output signal S4 _c (t) formed in this way indicates the intensity of the fluorescent radiation FL when the pump radiation LB is switched on and the microwave signal μW is switched off. The third filter output signal S4 _c (t) formed in this way thus indicates the intensity of the microwave-free fluorescent radiation FL, as for example from the EP 3 980 797A1 is known.

The fourth filter output signal S4 _d (t) formed in this way indicates the intensity of the fluorescence radiation FL when the pump radiation LB is switched off and the microwave signal μW is switched off. Since no fluorescence radiation FL occurs due to the missing pump radiation LB, this second filter output signal S4 _d (t) formed in this way represents the radiation background which is present for whatever reason.

The document presented here now proposes to understand the filter output signal S4(t) as a feature vector signal. The document presented here now proposes to form this vector filter output signal S4(t) by subtracting the respective radiation background, for example as follows: $$S4\left(t\right)=\left(\begin{array}{c}\mathrm{<figure-callout\; id="4"\; label="S"\; filenames="DE102023122657A1\_0041.png,DE102023122657A1\_0042.png"\; state="\{\{state\}\}">S</figure-callout>}{4}_1\left(t\right)\\ \mathrm{<figure-callout\; id="4"\; label="S"\; filenames="DE102023122657A1\_0041.png,DE102023122657A1\_0042.png"\; state="\{\{state\}\}">S</figure-callout>}{4}_2\left(t\right)\\ \mathrm{<figure-callout\; id="4"\; label="S"\; filenames="DE102023122657A1\_0041.png,DE102023122657A1\_0042.png"\; state="\{\{state\}\}">S</figure-callout>}{4}_3\left(t\right)\\ \mathrm{<figure-callout\; id="4"\; label="S"\; filenames="DE102023122657A1\_0041.png,DE102023122657A1\_0042.png"\; state="\{\{state\}\}">S</figure-callout>}{4}_4\left(t\right)\end{array}\right)=\left(\begin{array}{c}S{4}_a\left(t\right)-S{4}_b\left(t\right)\\ S{4}_c\left(t\right)-S{4}_d\left(t\right)\\ S{4}_a\left(t\right)-S{4}_c\left(t\right)\\ S{4}_a\left(t\right)-S{4}_b\left(t\right)-S{4}_c\left(t\right)+S{4}_d\left(t\right)\end{array}\right)$$

$$S4\left(t\right)=\left(\begin{array}{c}{\displaystyle \underset{0}{\overset{2\pi }{\int }}S1\left(t\right)\cdot \left(S5w\left(t\right)-S5wq\left(t\right)\right)\cdot S5m\left(t\right)dt}\\ {\displaystyle \underset{0}{\overset{2\pi }{\int }}S1\left(t\right)\cdot \left(S5w\left(t\right)-S5wq\left(t\right)\right)\cdot S5mq\left(t\right)dt}\\ {\displaystyle \underset{0}{\overset{2\pi }{\int }}S1\left(t\right)\cdot S5w\left(t\right)\cdot \left(S5m\left(t\right)-S5mq\left(t\right)\right)dt}\\ {\displaystyle \underset{0}{\overset{2\pi }{\int }}S1\left(t\right)}\cdot \left(S5w\left(t\right)-S5wq\left(t\right)\right)\cdot \left(S5m\left(t\right)-S5mq\left(t\right)\right)dt\end{array}\right)$$

This matches with: $$S4\left(t\right)=\left(\begin{array}{c}{\displaystyle \underset{0}{\overset{2\pi }{\int }}S1\left(t\right)\cdot S5w\left(t\right)\cdot S5m\left(t\right)dt}-{\displaystyle \underset{0}{\overset{2\pi }{\int }}S1\left(t\right)\cdot S5wq\left(t\right)\cdot S5m\left(t\right)dt}\\ {\displaystyle \underset{0}{\overset{2\pi }{\int }}S1\left(t\right)\cdot S5w\left(t\right)\cdot S5mq\left(t\right)dt}-{\displaystyle \underset{0}{\overset{2\pi }{\int }}S1\left(t\right)\cdot S5wq\left(t\right)\cdot S5mq\left(t\right)dt}\\ {\displaystyle \underset{0}{\overset{2\pi }{\int }}S1\left(t\right)\cdot S5w\left(t\right)\cdot S5m\left(t\right)dt}-{\displaystyle \underset{0}{\overset{2\pi }{\int }}S1\left(t\right)\cdot S5w\left(t\right)\cdot S5mq\left(t\right)dt}\\ {\displaystyle \underset{0}{\overset{2\pi }{\int }}S1\left(t\right)\cdot S5w\left(t\right)\cdot S5m\left(t\right)dt}-{\displaystyle \underset{0}{\overset{2\pi }{\int }}S1\left(t\right)\cdot S5wq\left(t\right)\cdot S5m\left(t\right)dt}-{\displaystyle \underset{0}{\overset{2\pi }{\int }}S1\left(t\right)\cdot S5w\left(t\right)\cdot S5mq\left(t\right)dt}+{\displaystyle \underset{0}{\overset{2\pi }{\int }}S1\left(t\right)\cdot S5wq\left(t\right)\cdot S5mq\left(t\right)dt}\end{array}\right)$$

$$S4\left(t\right)=\left(\begin{array}{c}{\displaystyle \underset{0}{\overset{2\pi }{\int }}S1\left(t\right)\cdot \left(\mathrm{<figure-callout\; id="5w"\; label="S"\; filenames="DE102023122657A1\_0034.png,DE102023122657A1\_0097.png"\; state="\{\{state\}\}">S</figure-callout>}5w\left(t\right)-\mathrm{<figure-callout\; id="5w"\; label="S"\; filenames="DE102023122657A1\_0034.png,DE102023122657A1\_0097.png"\; state="\{\{state\}\}">S</figure-callout>}5wq\left(t\right)\right)\cdot \mathrm{<figure-callout\; id="5m"\; label="S"\; filenames="DE102023122657A1\_0109.png"\; state="\{\{state\}\}">S</figure-callout>}5m\left(t\right)dt}\\ {\displaystyle \underset{0}{\overset{2\pi }{\int }}S1\left(t\right)\cdot \left(\mathrm{<figure-callout\; id="5w"\; label="S"\; filenames="DE102023122657A1\_0034.png,DE102023122657A1\_0097.png"\; state="\{\{state\}\}">S</figure-callout>}5w\left(t\right)-\mathrm{<figure-callout\; id="5w"\; label="S"\; filenames="DE102023122657A1\_0034.png,DE102023122657A1\_0097.png"\; state="\{\{state\}\}">S</figure-callout>}5wq\left(t\right)\right)\cdot \mathrm{<figure-callout\; id="5m"\; label="S"\; filenames="DE102023122657A1\_0109.png"\; state="\{\{state\}\}">S</figure-callout>}5mq\left(t\right)dt}\\ {\displaystyle \underset{0}{\overset{2\pi }{\int }}S1\left(t\right)\cdot \mathrm{<figure-callout\; id="5w"\; label="S"\; filenames="DE102023122657A1\_0034.png,DE102023122657A1\_0097.png"\; state="\{\{state\}\}">S</figure-callout>}5w\left(t\right)\cdot \left(\mathrm{<figure-callout\; id="5m"\; label="S"\; filenames="DE102023122657A1\_0109.png"\; state="\{\{state\}\}">S</figure-callout>}5m\left(t\right)-\mathrm{<figure-callout\; id="5m"\; label="S"\; filenames="DE102023122657A1\_0109.png"\; state="\{\{state\}\}">S</figure-callout>}5mq\left(t\right)\right)dt}\\ {\displaystyle \underset{0}{\overset{2\pi }{\int }}S1\left(t\right)}\cdot \left(\mathrm{<figure-callout\; id="5w"\; label="S"\; filenames="DE102023122657A1\_0034.png,DE102023122657A1\_0097.png"\; state="\{\{state\}\}">S</figure-callout>}5w\left(t\right)-\mathrm{<figure-callout\; id="5w"\; label="S"\; filenames="DE102023122657A1\_0034.png,DE102023122657A1\_0097.png"\; state="\{\{state\}\}">S</figure-callout>}5wq\left(t\right)\right)\cdot \left(\mathrm{<figure-callout\; id="5m"\; label="S"\; filenames="DE102023122657A1\_0109.png"\; state="\{\{state\}\}">S</figure-callout>}5m\left(t\right)-\mathrm{<figure-callout\; id="5m"\; label="S"\; filenames="DE102023122657A1\_0109.png"\; state="\{\{state\}\}">S</figure-callout>}5mq\left(t\right)\right)dt\end{array}\right)$$

nicht berücksichtigt, da dieses Integral einen Einfluss der Mikrowellenstrahlung auf das Rauschen ohne Fluoreszenz voraussetzt. Dieses Integral kann aber theoretisch ebenfalls Teil des vektoriellen Filterausgangssignals S4(t) sein.The result is a four-dimensional filter output signal S4(t). Here, the possible further dimension of the filter output signal was determined according to the integral $${\displaystyle \underset{}{\overset{}{\int }}}$$$${\displaystyle \underset{0}{\overset{2\pi }{}}S1\left(t\right)\cdot \mathrm{<figure-callout\; id="5w"\; label="S"\; filenames="DE102023122657A1\_0034.png,DE102023122657A1\_0097.png"\; state="\{\{state\}\}">S</figure-callout>}5wq\left(t\right)\cdot \left(\mathrm{<figure-callout\; id="5m"\; label="S"\; filenames="DE102023122657A1\_0109.png"\; state="\{\{state\}\}">S</figure-callout>}5m\left(t\right)-\mathrm{<figure-callout\; id="5m"\; label="S"\; filenames="DE102023122657A1\_0109.png"\; state="\{\{state\}\}">S</figure-callout>}5mq\left(t\right)\right)dt}$$

not taken into account because this integral assumes an influence of microwave radiation on the noise without fluorescence. However, this integral can theoretically also be part of the vector filter output signal S4(t).

Typically, the control device CTR sets different microwave frequencies ω _µW of the microwave signal µW via the data bus DB in the microwave signal source µWG and sets different values of the compensation field control signal. The control device CTR thus typically sets different amplitudes of the additional magnetic flux density B _ad , which the magnetic field generating means Lc generates. The control device CTR then determines the value of the multi-dimensional filter output signal S4(t) by means of the multiple correlator LIV for preferably each of the set two-dimensional operating points from the value of the compensation field control signal (ie set additional magnetic flux density B _ad ) and the frequency value of the microwave frequency ω _µW of the microwave signal µW. Ie the device covers in the 51a the area of the 51a at least partially with a grid or a distribution of operating points of the device at which the device determines the values of the multidimensional filter output signals S4(t) associated with these operating points.

The control device CTR preferably stores these values in a memory RAM, NVM.

The control device CTR preferably stores these values in a memory RAM, NVM, preferably in the form of data records.

Preferably, each data set firstly comprises the vectorial value of the operating point, i.e. the value of the compensation field control signal (ie set additional magnetic flux density B _ad ) and the frequency value of the microwave frequency ω _µW of the microwave signal µW, and secondly the current vector component values of the multidimensional filter output signal S4(t) .

If the control device CTR has measured all operating points of a measurement cycle, the control device CTR and/or the pattern recognition device MEV can use these data sets as a preliminary feature vector for a computer or logic-implemented pattern recognition method or one of the computer-implemented methods described above.

For this purpose, the device can have a separate pattern recognition device MEV, which directly evaluates the vector filter output signal S4(t) or accesses the data records in the RAM, NVM. Alternatively and preferably, the control device CTR can emulate such a pattern recognition device MEV using a computer-implemented method. For example, the control device CTR can execute a computer-implemented artificial intelligence program as a pattern recognition program. For example, the control device CTR can execute a computer-implemented neural network model NN, which estimates the total flux density B _Σ and the external total flux density B _ext =B _Σ -B _ad from the recorded parameters. For example, the pattern recognition device MEV can also be a device that carries out a computer-implemented or logic-implemented method for pattern recognition or for preparing pattern recognition by the control device CTR using a computer-implemented method for pattern recognition. For this purpose, the pattern recognition device MEV typically generates a pattern data record MDS. This pattern data record MDS preferably comprises the data record of a pattern recognized by the pattern recognition device MEV and/or a feature vector that the pattern recognition MEV has extracted from the typically vectorial filter output signal S4(t) and possibly other data and signals present in the system. The pattern recognition device MEV makes this pattern data set MDS available for pattern recognition and/or post-processing of the control device via the data bus DB and/or via a FiFo structure or a special interface with a special pattern data set data bus for further processing and/or use. In the case of transmitting feature vector data within the pattern data set, the control device CTR can carry out pattern recognition in the transmitted current and previous feature vector data using a computer-implemented program for pattern recognition or the like. An important value that the control device CTR and/or the pattern recognition device MEV determine is typically the value of the detected total flux density B _Σ . More typical This sample data record MEV also includes the measurement error value with which this value of the detected total flux density B _Σ is affected. The pattern recognition device MEV can include its own computer system with its own computer core. The pattern recognition device MEV can include its own program memory and its own data memory. The system's memories can be volatile and non-volatile. Such a computer system of the pattern recognition device MEV can, if necessary, access the volatile memory RAM and non-volatile memory NVM together with the control device CTR and share them in whole or in part with the control device CTR. The pattern recognition device MEV can implement its functions in whole or in part by executing corresponding computer-implemented programs that are stored at least temporarily in the memories of the pattern recognition device MEV or the RAM, NVM memories of the system.

It is particularly advantageous if the control device CTR detects one or more future operating points of the sensor system (with regard to magnetic flux density bath and microwave frequency ω _µW of the microwave signal µW) during a measurement cycle that is still running, depending on the data sets already recorded in the measurement cycle that is still running and in previous measurement cycles. which are to be measured subsequently. Preferably, the control device CTR uses, for example, a computer-implemented method of Bayesian optimization to determine these subsequent one or more operating points from the value of the compensation field control signal (ie set additional magnetic flux density B _ad ) and the frequency value of the microwave frequency ω _µW of the microwave signal µW at this Set the operating point for the next determination(s) of the vector component values of the multidimensional filter output signal S4(t).

In a further embodiment, the sensor system preferably comprises a display unit, in particular a screen 32, which is able to graphically display the position of the boundary between the first measuring point and the second measuring point in the parameter space.

In a further embodiment of the sensor system, the display unit, in particular the screen 32, has, for example, a graphical user interface that enables a user to monitor and adjust the position of the boundary in the parameter space.

In a further embodiment of the sensor system, the control computer, for example the control device CTR, is set up to apply computer-implemented error detection and error correction algorithms based on the measured values in order to improve the accuracy of determining the position of the boundary in the parameter space.

In a further embodiment of the sensor system, the control computer, for example the control device CTR, is set up to communicate with other sensors and/or systems (e.g. 33), in particular via a data interface (e.g. 29), in order to provide additional information for determining the position of the border in the parameter space and/or to pass them on to these other sensors and/or systems (e.g. 33) and/or to keep them available for them.

In a further embodiment of the sensor system, the control computer, for example the control device CTR, is set up to work in real time and to continuously monitor and update the position of the limit in the parameter space.

In a further embodiment of the sensor system, the control computer, for example the control device CTR, is set up to adaptively adjust the operating points in the parameter space in order to achieve optimal measurement accuracy for determining the position of the limit.

In a further embodiment of the sensor system, the control computer, for example the control device CTR, is set up to store and analyze the measurement results in order to recognize trends and patterns in the position determination of the boundary in the parameter space.

So that the optimization does not become counterproductive due to a measurement time that is too long, a termination condition, for example the number of operating points, should then be provided.

If all predetermined working points and possibly redetermined ones in the course of a measuring cycle have been measured and/or the predetermined maximum number of measuring points has been reached or exceeded, the sensor system typically ends the measuring cycle.

After the last measurement cycle has ended, the control device CTR typically starts the next measurement cycle. For this purpose, the control device CTR can, for example, first measure the predetermined operating points from a respective value of the compensation field control signal (ie set additional magnetic flux density B _ad ) at this operating point and the respective frequency value of the microwave frequency of the microwave signal μW at this operating point and the associated vector component values of the multidimensional filter output signal S4 (t) record at these operating points and then optimize the measured values in a second phase and/or further phases of the measuring cycle by measuring additional operating points.

The determination of the additional operating points within the further phases of the measurement cycle can also be carried out using computer-implemented optimization methods other than a computer-implemented Bayesian optimization method. The shape and course of the lower resonance edge 522, the lower middle resonance edge 23, the upper middle resonance edge 524, the upper resonance edge 25 and the middle resonance minimum 529 of the 51a are already known or can be detected in a calibration measurement process. Only the position 530 of the tip of the V formation (522, 525) can be changed by an additional magnetic flux density B _ad or a change in the external magnetic flux density B _ext . The computer-implemented method that the control device CTR executes preferably takes this data into account. Preferred are these calibration data, which include the shape and position and the course of the lower resonance edge 522, the lower middle resonance edge 523, the upper middle resonance edge 24, the upper resonance edge 525 and the middle resonance minimum 529 of the 51a describe stored at least partially in a non-volatile memory NVM or another memory RAM of the device or a storage medium of the device, so that the control device CTR can access this data via the data bus DB and by comparing between the recorded data sets of the current measurement cycle and possibly previous measurement cycles can draw conclusions about the current total flux density B _Σ and the external total flux density B _ext =B _Σ -B _ad and/or can draw conclusions about additionally necessary operating points for further measurements to improve the measurement result.

Preferably, the device determines a respective measurement uncertainty for the operating points and the areas in between using a computer-implemented method using the control device CTR.

1. 1. die wahrscheinliche Lage der unteren Resonanzkante 522,
2. 2. die wahrscheinliche Lage der unteren mittleren Resonanzkante 523,
3. 3. die wahrscheinliche Lage der oberen mittleren Resonanzkante 524,
4. 4. die wahrscheinliche Lage der oberen Resonanzkante 525,
5. 5. die wahrscheinliche Lage des mittleren Resonanzminimums 529,
6. 6. den wahrscheinlichen Wert der wirksamen Offsetflussdichte B_off,
7. 7. den wahrscheinlichen Wert der Nullpunktsflussdichte B₀,
8. 8. den wahrscheinlichen Wert der Nullpunktsmikrowellenfrequenz ω_µW0,
9. 9. den wahrscheinlichen Wert 564 der magnetischen Flussdichte B, der der oberen Referenzlinie 561 zugeordnet ist, an einem oder mehreren Arbeitspunkten,
10. 10. den wahrscheinlichen Wert 565 der magnetischen Flussdichte B, der der unteren Referenzlinie 562 zugeordnet ist, an einem oder mehreren Arbeitspunkten,
11. 11. die wahrscheinliche Differenz 566 des Werts der magnetischen Flussdichte B, der der mittleren Referenzlinie 563 zugeordnet ist, minus dem Wert 565 der magnetischen Flussdichte B, der der unteren Referenzlinie 562 zugeordnet ist,
12. 12. die wahrscheinliche Steigung 567 der Kurve an einem oder mehreren Arbeitspunkten;
13. 13. die Polynomkoeffizienten der Polynomapproximation 627 der Kurve in einigen Arbeitspunkten,
14. 14. den wahrscheinlichen Wert einer unteren wirksamen magnetischen Flussdichte B₂₂,
15. 15. den wahrscheinlichen Wert einer unteren mittleren wirksamen magnetischen Flussdichte B₂₃,
16. 16. den wahrscheinlichen Wert einer oberen mittleren wirksamen magnetischen Flussdichte B₂₄,
17. 17. den wahrscheinlichen Wert einer oberen wirksamen magnetischen Flussdichte B₂₅,
18. 18. den wahrscheinlichen Wert einer wirksamen magnetische Resonanzminimum-Flussdichte B₂₉,
19. 19. den wahrscheinlichen Wert einer Nullpunktsmikrowellenfrequenz ω_µW0;
20. 20. den wahrscheinlichen Wert einer unteren Mikrowellenfrequenz ω_µW22;
21. 21. den wahrscheinlichen Wert einer unteren mittleren Mikrowellenfrequenz ω_µW23;
22. 22. den wahrscheinlichen Wert einer oberen mittleren Mikrowellenfrequenz ω_µW24;
23. 23. den wahrscheinlichen Wert einer oberen Mikrowellenfrequenz ω_µW25;
24. 24. den wahrscheinlichen Wert einer Resonanzminimum-Mikrowellenfrequenz ω_µW29;
25. 25. den wahrscheinlichen Wert einer unbekannten Mikrowellenfrequenz ω_µWnk;
26. 26. den wahrscheinlichen Wert einer Mikrowellenmodulationsfrequenz f_MµW;

The control device CTR preferably determines one or more of the following values as part of a measurement cycle

1. 1. the probable position of the lower resonance edge 522,
2. 2. the probable position of the lower middle resonance edge 523,
3. 3. the probable position of the upper middle resonance edge 524,
4. 4. the probable position of the upper resonance edge 525,
5. 5. the probable location of the mean resonance minimum 529,
6. 6. the probable value of the effective offset flux density B _off ,
7. 7. the probable value of the zero-point flux density B ₀ ,
8. 8. the probable value of the zero point microwave frequency ω _µW0 ,
9. 9. the probable value 564 of the magnetic flux density B associated with the upper reference line 561 at one or more operating points,
10. 10. the probable value 565 of the magnetic flux density B associated with the lower reference line 562 at one or more operating points,
11. 11. the probable difference 566 of the value of the magnetic flux density B associated with the middle reference line 563 minus the value 565 of the magnetic flux density B associated with the lower reference line 562,
12. 12. the probable slope 567 of the curve at one or more operating points;
13. 13. the polynomial coefficients of the polynomial approximation 627 of the curve at some operating points,
14. 14. the probable value of a lower effective magnetic flux density B ₂₂ ,
15. 15. the probable value of a lower average effective magnetic flux density B ₂₃ ,
16. 16. the probable value of an upper average effective magnetic flux density B ₂₄ ,
17. 17. the probable value of an upper effective magnetic flux density B ₂₅ ,
18. 18. the probable value of an effective magnetic resonance minimum flux density B ₂₉ ,
19. 19. the probable value of a zero point microwave frequency ω _µW0 ;
20. 20. the probable value of a lower microwave frequency ω _µW22 ;
21. 21. the probable value of a lower mean microwave frequency ω _µW23 ;
22. 22. the probable value of an upper mean microwave frequency ω _µW24 ;
23. 23. the probable value of an upper microwave frequency ω _µW25 ;
24. 24. the probable value of a resonance minimum microwave frequency ω _µW29 ;
25. 25. the probable value of an unknown microwave frequency ω _µWnk ;
26. 26. the probable value of a microwave modulation frequency f _MµW ;

The device can determine the probable frequency value of an unknown microwave frequency ω _µWnk by sending the microwave signal source µWG an internal microwave signal (µW_G_I, µW_G_II, µW_G_III, µW_G_IV) (See 85 for a vectorial configuration, which can be used analogously here), which has a known internal microwave frequency ( _{ωµW_I} , ω _{µW_II} , ω _{µW_III} , ω _{µW_IV} ), mixes with an external microwave signal S _ωnk to form the microwave signal µW and thereby one of the two Sidebands are filtered out using a filter (µWG_F_I, µWG_F_II, µWG_F_III, µWG_F_I, µWG_F_IV). The device is then typically calibrated with a known external microwave signal S _ωµwk with a reference microwave frequency ω _µWk and the zero point microwave frequency ω _µW0 and the value of the zero point flux density B ₀ are determined as the reference operating point. If an unknown microwave frequency ω _nk is now fed in from externally as an external microwave signal S _ωnk , the zero point microwave frequency ω _µW0 shifts by a frequency difference value, between the zero point microwave frequency ω _µW0 during calibration and the zero point microwave frequency ω _µW0 when measuring the unknown microwave frequency ω _µWnk Difference between reference microwave frequency and the unknown microwave frequency ω _µWnk corresponds. Therefore, the unknown microwave frequency ω _µWnk can be determined by determining the zero point microwave frequency ω _µW0 .

The device preferably regulates the additional magnetic field B _ad . For this purpose, the device detects the total magnetic flux density B _Σ using a magnetic field sensor MS, compares the detected value of the total flux density B _Σ with a setpoint and then adjusts the current supply to the magnetic field generating means Lc according to the difference between the total flux density B _Σ and the setpoint. It is preferably a control with a PID controller characteristic. The device can, for example, form the signal S4 _c (t) and use it as a controlled variable. In that case, the sensor element SE itself would be the magnetic field sensor MS. If the device does not use the sensor element SE as a magnetic field sensor MS for regulating the total magnetic flux density B _Σ , the device can have a magnetic field sensor control SIS, which controls, operates and reads out the magnetic field sensor MS and the measured data read out in this way to the magnetic field controller LCTR and / or the Control device CTR for the readjustment of the total magnetic flux density B _Σ , for example by regulating the current supply to the magnetic field generating means Lc through the magnetic field controller LCTR. Preferably, the control device CTR can read out and/or control the magnetic field controller LCTR and the magnetic field sensor control SIS via the data bus DB.

It is obvious that the formation of the above integrals can also be done analogously without digitizing the receiver output signal in the multiple correlator LIV. For example, the vector component signals S4 _a , S4 _b , S4 _c and S4 _d or S4 ₁ , S4 ₂ , S4 ₃ and S4 ₄ can also be formed in the multiple correlator LIV by means of analog signal processing. In this case, it makes sense to digitize the then analog vector component signals S4 _a , S4 _b , S4 _c and S4 _d or S4 ₁ , S4 ₂ , S4 ₃ and S4 ₄ of the filter output signal S4 in order to make the values available to the control device CTR. In the case of an analog formation of the above integrals, the use of a low-pass filter TP or a filter with low-pass properties as an integrator after the multiplications has been carried out has proven successful.

For positioning the sensor elements SE

1. 1. auf der elektrisch leitenden linken Signalmassefläche 1310,
2. 2. in der nicht-leitenden linken Isolationslücke 2340,
3. 3. auf dem Signalleiter 1330,
4. 4. in der nicht-leitenden rechten Isolationslücke 2350,
5. 5. auf der elektrisch leitenden linken Signalmassefläche 1320.

The document presented here indicates that a total of five positionings of sensor elements SE are possible relative to the lines and line surfaces of the Tri-Plate line 2380:

1. 1. on the electrically conductive left signal ground surface 1310,
2. 2. in the non-conductive left isolation gap 2340,
3. 3. on the signal conductor 1330,
4. 4. in the non-conductive right isolation gap 2350,
5. 5. on the electrically conductive left signal ground surface 1320.

Mixed forms of the sensor elements SE due to incorrect placement and enlargement of the relevant sensor elements SE are possible.

Figure 70

70 shows an exemplary schematic implementation of an analog multiple correlator LIV in a schematically sketched construction of 69 .

To simplify things, the analogue multiple correlator LIV provides the 70 just an integral of the in the description of 69 enumerated integrals. It is the integral $$S{4}_a\left(t\right)={\displaystyle \underset{0}{\overset{2\pi }{\int }}S1\left(t\right)\cdot \mathrm{<figure-callout\; id="5w"\; label="S"\; filenames="DE102023122657A1\_0034.png,DE102023122657A1\_0097.png"\; state="\{\{state\}\}">S</figure-callout>}5w\left(t\right)\cdot \mathrm{<figure-callout\; id="5m"\; label="S"\; filenames="DE102023122657A1\_0109.png"\; state="\{\{state\}\}">S</figure-callout>}5m\left(t\right)dt}$$

Since the multiple correlator LIV is in the 70 only forms this one integral, the multiple correlator LIV does not form any of the differences from the integrals, as in the description of 69 described.

In order to be able to form the other integrals, additional device parts would have to be added, which is easily possible for a skilled person.

Firstly, the missing inverted signals of the signals used here would have to be formed. For this purpose, for example, an inverter or the like would have to form the inverted microwave modulation signal SSmq or a functionally equivalent signal from the microwave modulation signal S5m. Furthermore, an inverter or the like would have to form the inverted LED modulation signal S5wd or a functionally equivalent signal from the LED modulation signal S5w. In addition, additional multipliers and a further low-pass TP would be necessary for each signal to be formed. In order to form the differences between the filter output signals S4 _a (t), S4 _b (t), S4 _c (t) and S4 _d (t) formed by these low-pass filters TP, a subtractor would then be necessary for each difference signal to be formed, which would be one of the filter output signals S4 _a (t), S4 _b (t), S4 _c (t) and S4 _d (t) from another one of the filter output signals S4 _a (t), S4 _b (t), S4 _c (t) and S4 _d (t ) is subtracted and one of the vector component signals S4 ₁ (t), S4 ₂ (t), S4 _a (t) and S4 ₄ (t) of the vector filter output signal S4 (t) and possibly other vector component signals of the vector filter output signal S4 (t) are formed .

The 70 is therefore just one example of an analog realization of the multiple correlator LIV from a larger set of possible realizations that are part of the technical teaching of the document presented here.

In the 70 The first amplifier V1 does not digitize the receiver output signal S0 into a digital receiver output signal S1, but only forms the analog, amplified receiver output signal S1.

bildet. Das Ergebnis ist das erste Zwischensignal S3a des L3-Produkts des Mehrfachkorrelators LIV.In the example of the 70 the multiple correlator LIV includes a first multiplier M1, which is the first product S1(t)*s1(t)=S3a(t) of the L3 product $$S4\left(t\right)={\displaystyle \underset{0}{\overset{2\pi }{\int }}S1\left(t\right)\cdot s1\left(t\right)\cdot s2\left(t\right)dt}$$

forms. The result is the first intermediate signal S3a of the L3 product of the multiple correlator LIV.

In the example of the 70 the first signal s1(t) of the L3 product is the LED modulation signal S5w.

bildet. Das Ergebnis ist das zweite Zwischensignal S3b(t) des L3-Produkts des Mehrfachkorrelators LIV.In the example of the 70 the multiple correlator LIV includes a second multiplier M2, which is the second product (S1(t)*s1(t))*s2(t)=S3a(t)*s2(t)=S3b(t) of the L3 product $$S4\left(t\right)={\displaystyle \underset{0}{\overset{2\pi }{\int }}S1\left(t\right)\cdot s1\left(t\right)\cdot s2\left(t\right)dt}$$

forms. The result is the second intermediate signal S3b(t) of the L3 product of the multiple correlator LIV.

In the example of the 70 Low-pass filtering of the intermediate signal S3b of the L3 product of the multiple correlator LIV in an analog low-pass filter TP realizes the integration. First of all, this low-pass filter TP only forms an indefinite and not a definite integral. Secondly, this equivalence of a low-pass filter TP with an integrator only applies to sufficiently low frequencies.

The cutoff frequency of the low-pass filter TP is therefore preferably selected such that the LED modulation frequency f _LED , the microwave modulation frequency f _µW and the difference frequency |f _LED - f _µW | can be safely suppressed, so that essentially only the components around 0Hz pass through the low-pass filter TP.

The low pass TP can also implement and include more complex filter functions.

Disregarding the definiteness of the integral in the low-pass filter TP leads to errors. These can be avoided if a sample & hold circuit at the output of the low-pass filter TP always freezes the analog level at the output of the low-pass filter TP until the end of the next period at the end of the longer period of the period of the microwave modulation signal S5m or the period of the LED modulation signal S5w. For this it is necessary that the two period durations have an integer ratio.

In practice it has been shown that, depending on the respective application, such a sample & hold circuit is often not absolutely necessary as part of the low pass TP.

In the example of the 70 the low pass TP forms the vector component signal S4 _a (t) of the one-dimensional vector filter output signal S4 (t), which is, for example, one-dimensional.

In the example of the 70 The analog-to-digital converter ADC digitizes the vector component signal S4 _a (t) of the one-dimensional vector filter output signal S4 (t), which is simplified here as an example, and makes the sample values available to the control device CTR via the data bus DB.

In the case of such an analog implementation, the device typically comprises more than one analog multiple correlator LIV for forming several vector component signals S4 _a (t), S4 _b (t), S4 _c (t) and S4 _d (t) of the vector filter output signal S4 (t) . The analog-to-digital converter ADC then samples each of these vector component signals S4 _a (t), S4 _b (t), S4 _c (t) and S4 _d (t) of the vector filter output signal S4 (t) and converts their sample values the data bus DB is available to the control device CTR.

In this respect it is 70 only a greatly simplified representation to explain the implementation of a multiple correlator LIV. If the device comprises more than one multiple correlator LIV, these typically include different device parts such as multipliers and intermediate signals together for synergy reasons in order to save resources.

Figure 71

71 shows a device for controlling three sensor elements SE (1410, 1420, 1430), which are placed on the carrier substrate 1360, by means of an example tri-plate line 2380. Instead of the tri-plate line 2380, other wave lines such as a slot line 1880 with the exemplary sensor elements 1410, 1420, 1430 or the microstrip line 1380 with the exemplary sensor elements 1410, 1420, 1430 can be used. The technical teaching of the 59 In general, this should stand for the control, measurement and evaluation of several sensor elements SE, which are placed on a carrier substrate 1360 and whose NV centers and/or paramag magnetic centers interact with the electromagnetic field and in particular with the magnetic flux density component of an electromagnetic field that is transported by a waveguide that is manufactured on the carrier substrate 1360.

In the example of the 71 The device includes, as an example, three sensor elements SE, a left sensor element 1410 and a middle sensor element 1420 and a right sensor element 1430. The example of 71 is an example of devices with n sensor elements SE, where n is an integer positive number greater than 1 and in this example n=3 applies as an example.

In the example of the 71 the device comprises several - here three - sensor element channels. Each sensor element channel is preferably assigned to a sensor element of the sensor elements SE (1410, 1420, 1430).

General sensor element channel

The proposed device can typically have several sensor element channels. The proposed device preferably comprises at least one sensor element channel or, better, at least two sensor element channels. In the example of the 71 The proposed device includes, for example, three sensor element channels.

• • einen ersten Signalgenerator G1, der das LED-Modulationssignal S5w erzeugt,
• • einen Lichtquellentreiber LDRV, der das Sendesignal S5 für die Pumpstrahlungsquelle, hier die Lichtquelle LED, in Abhängigkeit von dem LED-Modulationssignal S5w erzeugt und vorzugsweise die Pumpstrahlungsquelle, hier die Lichtquelle LED, mit elektrischer Energie versorgt,
• • ein Sendesignal S5;
• • eine Pumpstrahlungsquelle, hier eine Lichtquelle LED, die die Pumpstrahlung LB in Abhängigkeit von dem Sendesignal S5 erzeugt und beispielsweise die Pumpstrahlungsquelle, hier eine Lichtquelle LED, nur zeitweise ein und nur zeitweise ausschaltet,
• • ein erstes optisches System,
  • ◯ das ein oder mehrere optische Funktionselemente umfasst und
  • ◯ das die Pumpstrahlung LB der Pumpstrahlungsquelle, hier der Lichtquelle LED, erfasst und
  • ◯ das die Pumpstrahlung LB zum zugeordneten Sensorelement SE transportiert und
  • ◯ das die Pumpstrahlung LB aus dem ersten optischen System auskoppelt und
  • ◯ das das zugeordnete Sensorelement SE mit Pumpstrahlung LB bestrahlt und
  • ◯ das bevorzugt einen Lichtwellenleiter LWL für das Sensorelement SE als ein solches optisches Funktionselement umfasst,
• • ein zweites optisches System,
  • ◯ das ein oder mehrere optische Funktionselemente umfasst und
  • ◯ das die Fluoreszenzstrahlung FL der NV-Zentren und/oder der paramagnetischen Zentren des zugeordneten Sensorelements SE erfasst und
  • ◯ das Fluoreszenzstrahlung FL der NV-Zentren und/oder der paramagnetischen Zentren des zugeordneten Sensorelements SE zum zugeordneten Fotodetektor PD transportiert und
  • ◯ das Fluoreszenzstrahlung FL der NV-Zentren und/oder der paramagnetischen Zentren des zugeordneten Sensorelements SE aus dem zweiten optischen System auskoppelt und
  • ◯ das den zugeordneten Fotodetektor PD mit Fluoreszenzstrahlung FL der NV-Zentren und/oder der paramagnetischen Zentren des zugeordneten Sensorelements SE bestrahlt und
  • ◯ das Funktionselemente, beispielsweise einen dichroitischen Spiegel F1 und/oder einen optischen Filter im Strahlengang, umfasst, die sicherstellen, dass im Wesentlichen keine Pumpstrahlung LB dieser oder anderer Pumpstrahlungsquellen, insbesondere die der Lichtquelle LED und/oder anderer Lichtquellen (LED, LED_1, LED2, LED_3), den Fotodetektor PD erreicht und
  • ◯ das bevorzugt einen Lichtwellenleiter LWL für das Sensorelement SE als ein solches optisches Funktionselement umfasst und
  • ◯ das Vorrichtungsteile umfassen kann, die mit Vorrichtungsteilen des ersten optischen Systems identisch sind,
• • den Fotodetektor PD, der die Intensität der empfangenen Fluoreszenzstrahlung FL in eine Empfängerausgangssignal S0 wandelt,
• • das Empfängerausgangssignal S0,
• • einen erster Verstärker V1 für das Sensorelement SE zur Verstärkung und/oder Digitalisierung des Empfangssignals S0 zum verstärkten Empfängerausgangssignal S1 bzw. zum digitalisierten Empfängerausgangssignal S1,
• • das verstärkte Empfängerausgangssignal S1 bzw. das digitalisierte Empfängerausgangssignal S1,
• • einen Mehrfachkorrelator LIV, der ein vektorielles Filterausgangssignal S4 in Abhängigkeit vom verstärkten Empfängerausgangssignal S1 bzw. vom digitalisierten Empfängerausgangssignal S1 und dem LED-Modulationssignal S5w bildet und Daten des vektoriellen Filterausgangssignals S4 der Steuervorrichtung CTR zur Verfügung stellt, insbesondere für die Steuervorrichtung CTR bereithält oder an die Steuervorrichtung CTR oder eine andere Vorrichtung (z.B. den Mustererkennungsvorrichtung MEV) insbesondere zur Auswertung überträgt,
• • ein vektorielles Filterausgangssignal S4 für das zugeordnete Sensorelement SE, das typischerweise ein Teil des eines gemeinsamen vektoriellen Filterausgangssignals S4 der vektoriellen Filterausgangssignale S4 anderer Sensorelementkanäle ist und typischerweise von einem Mustererkennungsvorrichtung MEV und/oder der Steuervorrichtung CTR ausgewertet wird.

Preferably comprises a sensor element channel

• • a first signal generator G1, which generates the LED modulation signal S5w,
• • a light source driver LDRV, which generates the transmission signal S5 for the pump radiation source, here the light source LED, depending on the LED modulation signal S5w and preferably supplies the pump radiation source, here the light source LED, with electrical energy,
• • a transmission signal S5;
• • a pump radiation source, here a light source LED, which generates the pump radiation LB depending on the transmission signal S5 and, for example, switches the pump radiation source, here a light source LED, only temporarily on and only temporarily off,
• • a first optical system,
  • ◯ which includes one or more optical functional elements and
  • ◯ which detects the pump radiation LB of the pump radiation source, here the light source LED, and
  • ◯ that transports the pump radiation LB to the assigned sensor element SE and
  • ◯ that couples out the pump radiation LB from the first optical system and
  • ◯ that irradiates the assigned sensor element SE with pump radiation LB and
  • ◯ which preferably comprises an optical waveguide LWL for the sensor element SE as such an optical functional element,
• • a second optical system,
  • ◯ which includes one or more optical functional elements and
  • ◯ which detects the fluorescence radiation FL of the NV centers and/or the paramagnetic centers of the associated sensor element SE and
  • ◯ the fluorescence radiation FL of the NV centers and/or the paramagnetic centers of the associated sensor element SE is transported to the associated photodetector PD and
  • ◯ the fluorescence radiation FL of the NV centers and/or the paramagnetic centers of the associated sensor element SE is coupled out of the second optical system and
  • ◯ which irradiates the assigned photodetector PD with fluorescence radiation FL of the NV centers and/or the paramagnetic centers of the assigned sensor element SE and
  • ◯ which comprises functional elements, for example a dichroic mirror F1 and/or an optical filter in the beam path, which ensure that essentially no pump radiation LB from this or other pump radiation sources, in particular that of the light source LED and/or other light sources (LED, LED_1, LED2 , LED_3), reaches the photodetector PD and
  • ◯ which preferably comprises an optical waveguide LWL for the sensor element SE as such an optical functional element and
  • ◯ which may include device parts that are identical to device parts of the first optical system,
• • the photodetector PD, which converts the intensity of the received fluorescent radiation FL into a receiver output signal S0,
• • the receiver output signal S0,
• • a first amplifier V1 for the sensor element SE for amplifying and/or digitizing the received signal S0 to the amplified receiver output signal S1 or to the digitized receiver output signal S1,
• • the amplified receiver output signal S1 or the digitized receiver output signal S1,
• • a multiple correlator LIV, which forms a vector filter output signal S4 depending on the amplified receiver output signal S1 or on the digitized receiver output signal S1 and the LED modulation signal S5w and makes data of the vector filter output signal S4 available to the control device CTR, in particular for the control device CTR the control device CTR or another device (e.g. the pattern recognition device MEV) transmits, in particular for evaluation,
• • a vectorial filter output signal S4 for the associated sensor element SE, which is typically part of a common vectorial filter output signal S4 of the vectorial filter output signals S4 of other sensor element channels and is typically evaluated by a pattern recognition device MEV and / or the control device CTR.

• • einen zweiten Signalgenerator G2, der dazu eingerichtet ist, ein Mikrowellenmodulationssignal S5m zu erzeugen;
• • eine Wellenleitung (1380, 1880, 2380, 6830, 6980);
• • eine Mikrowellensignalquelle µWG, die dazu eingerichtet ist, das Mikrowellensignal µW für die Wellenleitung (1380, 1880, 2380, 6830, 6980) in Abhängigkeit von dem Mikrowellenmodulationssignal S5m zu erzeugen und in die Wellenleitung (1380, 1880, 2380, 6830, 6980) einzuspeisen;
• • den Mehrfachkorrelator LIV für das Sensorelement SE, der ein vektorielles Filterausgangssignal S4 für das Sensorelement SE in Abhängigkeit vom verstärkten Empfängerausgangssignal S1 für das Sensorelement SE bzw. vom digitalisierten Empfängerausgangssignal S1 für das Sensorelement SE und dem LED-Modulationssignal S5w für das Sensorelement SE und dem Mikrowellenmodulationssignal S5m bildet und Daten des vektoriellen Filterausgangssignals S4 für das Sensorelement SE der Steuervorrichtung CTR zur Verfügung stellt, insbesondere für die Steuervorrichtung CTR bereithält oder an die Steuervorrichtung CTR oder eine andere Vorrichtung (z.B. die Mustererkennungsvorrichtung MEV) insbesondere zur Auswertung überträgt.

In a further development, the general sensor element channel includes,

• • a second signal generator G2, which is designed to generate a microwave modulation signal S5m;
• • a waveguide (1380, 1880, 2380, 6830, 6980);
• • a microwave signal source µWG, which is set up to generate the microwave signal µW for the waveguide (1380, 1880, 2380, 6830, 6980) depending on the microwave modulation signal S5m and into the waveguide (1380, 1880, 2380, 6830, 6980) to feed in;
• • the multiple correlator LIV for the sensor element SE, which produces a vector filter output signal S4 for the sensor element SE depending on the amplified receiver output signal S1 for the sensor element SE or on the digitized receiver output signal S1 for the sensor element SE and the LED modulation signal S5w for the sensor element SE and the Microwave modulation signal S5m forms and provides data of the vector filter output signal S4 for the sensor element SE of the control device CTR, in particular for the control device CTR or transmits it to the control device CTR or another device (e.g. the pattern recognition device MEV), in particular for evaluation.

The 71 has three such sensor element channels.

An exemplary first, left sensor element channel is assigned to the exemplary left sensor element 1410.

An exemplary second, middle sensor element channel is assigned to the exemplary middle sensor element 1420.

An exemplary third, right sensor element channel is assigned to the exemplary right sensor element 1430.

First, left sensor element channel

• • einen ersten Signalgenerator G1_1 für das linke Sensorelement 1410, der das LED-Modulationssignal S5w_1 für das linke Sensorelement 1410 erzeugt,
• • einen Lichtquellentreiber LDRV_1 für das linke Sensorelement 1410, der das Sendesignal S5_1 für das linke Sensorelement 1410 zur Ansteuerung der Pumpstrahlungsquelle für das linke Sensorelement 1410, hier die Lichtquelle LED_1 für das linke Sensorelement 1410, in Abhängigkeit von dem LED-Modulationssignal S5w_1 für das linke Sensorelement 1410 erzeugt und vorzugsweise die Pumpstrahlungsquelle für das linke Sensorelement 1410, hier die Lichtquelle LED_1 für das linke Sensorelement 1410, mit elektrischer Energie versorgt,
• • ein Sendesignal S5_1 für das linke Sensorelement 1410;
• • eine Pumpstrahlungsquelle für das linke Sensorelement 1410, hier eine Lichtquelle LED_1 für das linke Sensorelement 1410, die die Pumpstrahlung LB_1 für das linke Sensorelement 1410 in Abhängigkeit von dem Sendesignal S5_1 für das linke Sensorelement 1410 erzeugt und beispielsweise die Pumpstrahlungsquelle für das linke Sensorelement 1410, hier eine Lichtquelle LED_1 für das linke Sensorelement 1410, nur zeitweise ein und nur zeitweise ausschaltet,
• • ein erstes optisches System für das linke Sensorelement 1410,
  • ◯ das ein oder mehrere optische Funktionselemente umfasst und
  • ◯ das die Pumpstrahlung LB_1 für das linke Sensorelement 1410 der Pumpstrahlungsquelle für das linke Sensorelement 1410, hier der Lichtquelle LED_1 für das linke Sensorelement 1410, erfasst und
  • ◯ das die Pumpstrahlung LB für das linke Sensorelement 1410 zum zugeordneten Sensorelement SE, hier dem linken Sensorelement 1410, transportiert und
  • ◯ das die Pumpstrahlung LB_1 für das linke Sensorelement 1410aus dem ersten optischen System für das linke Sensorelement 1410auskoppelt und
  • ◯ das das zugeordnete Sensorelement SE, hier das linke Sensorelement 1410, mit Pumpstrahlung LB_1 für das linke Sensorelement 1410 bestrahlt und
  • ◯ das bevorzugt einen Lichtwellenleiter LWL_1 für das linke Sensorelement 1410 als ein solches optisches Funktionselement umfasst,
• • ein zweites optisches System,
  • ◯ das ein oder mehrere optische Funktionselemente umfasst und
  • ◯ das die Fluoreszenzstrahlung FL_1 der NV-Zentren und/oder der paramagnetischen Zentren des zugeordneten Sensorelements SE, hier des linken Sensorelements 1410, erfasst und
  • ◯ das Fluoreszenzstrahlung FL_1 der NV-Zentren und/oder der paramagnetischen Zentren des zugeordneten Sensorelements SE, hier des linken Sensorelements 1410, zum zugeordneten Fotodetektor PD_1 für das linke Sensorelement 1410 transportiert und
  • ◯ das Fluoreszenzstrahlung FL_1 der NV-Zentren und/oder der paramagnetischen Zentren des zugeordneten Sensorelements SE, hier des linken Sensorelements 1410, aus dem zweiten optischen System auskoppelt und
  • ◯ das den zugeordneten Fotodetektor PD_1 für das linke Sensorelement 1410 mit Fluoreszenzstrahlung FL_1 der NV-Zentren und/oder der paramagnetischen Zentren des zugeordneten Sensorelements SE, hier des linken Sensorelements 1410, bestrahlt und
  • ◯ das Funktionselemente, beispielsweise einen dichroitischen Spiegel F1_1 für das linke Sensorelement 1410 und/oder einen optischen Filter im Strahlengang, umfasst, die sicherstellen, dass im Wesentlichen keine Pumpstrahlung LB_1 dieser oder anderer Pumpstrahlungsquellen, insbesondere die der Lichtquelle LED_1 und/oder anderer Lichtquellen (LED, LED_1, LED2, LED_3), den Fotodetektor PD_1 für das linke Sensorelement 1410 erreicht und
  • ◯ das bevorzugt einen Lichtwellenleiter LWL_1 für das linke Sensorelement 1410 als ein solches optisches Funktionselement umfasst und
  • ◯ das Vorrichtungsteile umfassen kann, die mit Vorrichtungsteilen des ersten optischen Systems identisch sind,
• • den Fotodetektor PD_1 für das linke Sensorelement 1410, der die Intensität der empfangenen Fluoreszenzstrahlung FL_1 des linken Sensorelements 1410, in ein Empfängerausgangssignal S0_1 für das linke Sensorelement 1410 wandelt,
• • das Empfängerausgangssignal S0_1 für das linke Sensorelement 1410,
• • einen erster Verstärker V1_1 für das Sensorelement SE, hier für das linke Sensorelement 1410, zur Verstärkung und/oder Digitalisierung des Empfangssignals S0_1 für das linke Sensorelement 1410 zum verstärkten Empfängerausgangssignal S1_1 für das linke Sensorelement 1410 bzw. zum digitalisierten Empfängerausgangssignal S1_1 für das linke Sensorelement 1410,
• • das verstärkte Empfängerausgangssignal S1_1 für das linke Sensorelement 1410 bzw. das digitalisierte Empfängerausgangssignal S1_1 für das linke Sensorelement 1410,
• • einen Mehrfachkorrelator LIV_1 für das linke Sensorelement 1410, der ein vektorielles Filterausgangssignal S4_1 für das linke Sensorelement 1410 in Abhängigkeit vom verstärkten Empfängerausgangssignal S1_1 für das linke Sensorelement 1410 bzw. vom digitalisierten Empfängerausgangssignal S1_1 für das linke Sensorelement 1410 und dem LED-Modulationssignal S5w_1 für das linke Sensorelement 1410 bildet und Daten des vektoriellen Filterausgangssignals S4_1 für das linke Sensorelement 1410 der Steuervorrichtung CTR zur Verfügung stellt, insbesondere für die Steuervorrichtung CTR bereithält oder an die Steuervorrichtung CTR oder eine andere Vorrichtung (z.B. den Mustererkennungsvorrichtung MEV) insbesondere zur Auswertung überträgt,
• • ein vektorielles Filterausgangssignal S4_1 für das linke Sensorelement 1410, das typischerweise ein Teil des vektoriellen Filterausgangssignals S4 ist und typischerweise von einem Mustererkennungsvorrichtung MEV und/oder der Steuervorrichtung CTR ausgewertet wird.

The first, left sensor element channel preferably comprises

• • a first signal generator G1_1 for the left sensor element 1410, which generates the LED modulation signal S5w_1 for the left sensor element 1410,
• • a light source driver LDRV_1 for the left sensor element 1410, which sends the transmission signal S5_1 for the left sensor element 1410 to control the pump radiation source for the left sensor element 1410, here the light source LED_1 for the left sensor element 1410, depending on the LED modulation signal S5w_1 for the left one Sensor element 1410 is generated and preferably the pump radiation source for the left sensor element 1410, here the light source LED_1 for the left sensor element 1410, is supplied with electrical energy,
• • a transmission signal S5_1 for the left sensor element 1410;
• • a pump radiation source for the left sensor element 1410, here a light source LED_1 for the left sensor element 1410, which generates the pump radiation LB_1 for the left sensor element 1410 depending on the transmission signal S5_1 for the left sensor element 1410 and, for example, the pump radiation source for the left sensor element 1410, here a light source LED_1 for the left sensor element 1410, only temporarily on and only temporarily off,
• • a first optical system for the left sensor element 1410,
  • ◯ which includes one or more optical functional elements and
  • ◯ that detects the pump radiation LB_1 for the left sensor element 1410 of the pump radiation source for the left sensor element 1410, here the light source LED_1 for the left sensor element 1410, and
  • ◯ that transports the pump radiation LB for the left sensor element 1410 to the associated sensor element SE, here the left sensor element 1410, and
  • ◯ that couples out the pump radiation LB_1 for the left sensor element 1410 from the first optical system for the left sensor element 1410 and
  • ◯ that the assigned sensor element SE, here the left sensor element 1410, is irradiated with pump radiation LB_1 for the left sensor element 1410 and
  • ◯ which preferably comprises an optical waveguide LWL_1 for the left sensor element 1410 as such an optical functional element,
• • a second optical system,
  • ◯ which includes one or more optical functional elements and
  • ◯ that detects the fluorescence radiation FL_1 of the NV centers and/or the paramagnetic centers of the associated sensor element SE, here the left sensor element 1410, and
  • ◯ the fluorescence radiation FL_1 of the NV centers and/or the paramagnetic centers of the associated sensor element SE, here the left sensor element 1410, is transported to the associated photodetector PD_1 for the left sensor element 1410 and
  • ◯ the fluorescence radiation FL_1 of the NV centers and/or the paramagnetic centers of the associated sensor element SE, here the left sensor element 1410, is coupled out of the second optical system and
  • ◯ which irradiates the assigned photodetector PD_1 for the left sensor element 1410 with fluorescence radiation FL_1 of the NV centers and/or the paramagnetic centers of the assigned sensor element SE, here the left sensor element 1410, and
  • ◯ which comprises functional elements, for example a dichroic mirror F1_1 for the left sensor element 1410 and/or an optical filter in the beam path, which ensure that essentially no pump radiation LB_1 from this or other pump radiation sources, in particular that of the light source LED_1 and/or other light sources ( LED, LED_1, LED2, LED_3), reaches the photodetector PD_1 for the left sensor element 1410 and
  • ◯ which preferably comprises an optical waveguide LWL_1 for the left sensor element 1410 as such an optical functional element and
  • ◯ which may include device parts that are identical to device parts of the first optical system,
• • the photodetector PD_1 for the left sensor element 1410, which converts the intensity of the received fluorescence radiation FL_1 of the left sensor element 1410 into a receiver output signal S0_1 for the left sensor element 1410,
• • the receiver output signal S0_1 for the left sensor element 1410,
• • a first amplifier V1_1 for the sensor element SE, here for the left sensor element 1410, for amplifying and/or digitizing the received signal S0_1 for the left sensor element 1410 to the amplified receiver output signal S1_1 for the left sensor element 1410 or to the digitized receiver output signal S1_1 for the left sensor element 1410,
• • the amplified receiver output signal S1_1 for the left sensor element 1410 or the digitized receiver output signal S1_1 for the left sensor element 1410,
• • a multiple correlator LIV_1 for the left sensor element 1410, which produces a vector filter output signal S4_1 for the left sensor element 1410 depending on the amplified receiver output signal S1_1 for the left sensor element 1410 or on the digitized receiver output signal S1_1 for the left sensor element 1410 and the LED modulation signal S5w_1 for the left sensor element 1410 forms and provides data of the vector filter output signal S4_1 for the left sensor element 1410 of the control device CTR, in particular for the control device CTR or transmits it to the control device CTR or another device (e.g. the pattern recognition device MEV), in particular for evaluation,
• • a vectorial filter output signal S4_1 for the left sensor element 1410, which is typically part of the vectorial filter output signal S4 and is typically evaluated by a pattern recognition device MEV and/or the control device CTR.

• • einen ersten zweiten Signalgenerator G2_I, der dazu eingerichtet ist, ein erstes Mikrowellenmodulationssignal S5m_I zu erzeugen;
• • eine erste Wellenleitung (1380, 1880, 2380, 6830, 6980);
• • eine erste Mikrowellensignalquelle µWG_I, die dazu eingerichtet ist, das erste Mikrowellensignal µW_I für die erste Wellenleitung (1380, 1880, 2380, 6830, 6980) in Abhängigkeit von dem ersten Mikrowellenmodulationssignal S5m_I zu erzeugen und in die erste Wellenleitung 1380, 1880, 2380, 6830, 6980 einzuspeisen;
• • den Mehrfachkorrelator LIV_1 für das linke Sensorelement 1410, der ein vektorielles Filterausgangssignal S4_1 für das linke Sensorelement 1410 in Abhängigkeit vom verstärkten Empfängerausgangssignal S1_1 für das linke Sensorelement 1410 bzw. vom digitalisierten Empfängerausgangssignal S1_1 für das linke Sensorelement 1410 und dem LED-Modulationssignal S5w_1 für das linke Sensorelement 1410 und dem ersten Mikrowellenmodulationssignal S5m_I bildet und Daten des vektoriellen Filterausgangssignals S4_1 für das linke Sensorelement 1410 der Steuervorrichtung CTR zur Verfügung stellt, insbesondere für die Steuervorrichtung CTR bereithält oder an die Steuervorrichtung CTR oder eine andere Vorrichtung (z.B. die Mustererkennungsvorrichtung MEV) insbesondere zur Auswertung überträgt.

In a further development, the first sensor element channel includes,

• • a first second signal generator G2_I, which is designed to generate a first microwave modulation signal S5m_I;
• • a first waveguide (1380, 1880, 2380, 6830, 6980);
• • a first microwave signal source µWG_I, which is set up to generate the first microwave signal µW_I for the first waveline (1380, 1880, 2380, 6830, 6980) as a function of the first microwave modulation signal S5m_I and into the first waveline 1380, 1880, 2380, 6830, 6980 to feed in;
• • the multiple correlator LIV_1 for the left sensor element 1410, which produces a vector filter output signal S4_1 for the left sensor element 1410 depending on the amplified receiver output signal S1_1 for the left sensor element 1410 or on the digitized receiver output signal S1_1 for the left sensor element 1410 and the LED modulation signal S5w_1 for the left sensor element 1410 and the first microwave modulation signal S5m_I and provides data of the vector filter output signal S4_1 for the left sensor element 1410 of the control device CTR, in particular for the control device CTR or to the control device CTR or another device (eg the pattern recognition device MEV) in particular for Evaluation transfers.

With regard to the functions and the interaction of the sensor element channel-specific device parts (SE(1410); S5w_1, LDRV_1, S5_1, LED_1, LB_1, LWL_1, F1_1, PD_1, S0_1, V1_1, S1_1, LIV_1, S4_1) of the first, left sensor element channel and the others For parts of the device that are not specific to the sensor element channel, the document presented here refers to the description of the device 69 for the corresponding device parts (SE, S5w, LDRV, S5, LED, LB, LWL, F1, PD, S0, V1, S1, LIV, S4) of one sensor channel 69 and the other non-sensor element channel specific device parts of the device 69 .

Second, middle sensor element channel

• • einen ersten Signalgenerator G1_2 für das mittlere Sensorelement 1420, der das LED-Modulationssignal S5w_2 für das mittlere Sensorelement 1420 erzeugt,
• • einen Lichtquellentreiber LDRV_2 für das mittlere Sensorelement 1420, der das Sendesignal S5_2 für das mittlere Sensorelement 1420 zur Ansteuerung der Pumpstrahlungsquelle für das mittlere Sensorelement 1420, hier die Lichtquelle LED_2 für das mittlere Sensorelement 1420, in Abhängigkeit von dem LED-Modulationssignal S5w_2 für das mittlere Sensorelement 1420 erzeugt und vorzugsweise die Pumpstrahlungsquelle für das mittlere Sensorelement 1420, hier die Lichtquelle LED_2 für das mittlere Sensorelement 1420, mit elektrischer Energie versorgt,
• • ein Sendesignal S5_2 für das mittlere Sensorelement 1420;
• • eine Pumpstrahlungsquelle für das mittlere Sensorelement 1420, hier eine Lichtquelle LED_2 für das mittlere Sensorelement 1420, die die Pumpstrahlung LB_2 für das mittlere Sensorelement 1420 in Abhängigkeit von dem Sendesignal S5_2 für das mittlere Sensorelement 1420 erzeugt und beispielsweise die Pumpstrahlungsquelle für das mittlere Sensorelement 1420, hier eine Lichtquelle LED_2 für das mittlere Sensorelement 1420, nur zeitweise ein und nur zeitweise ausschaltet,
• • ein erstes optisches System für das mittlere Sensorelement 1420,
  • ◯ das ein oder mehrere optische Funktionselemente umfasst und
  • ◯ das die Pumpstrahlung LB_2 für das mittlere Sensorelement 1420 der Pumpstrahlungsquelle für das mittlere Sensorelement 1420, hier der Lichtquelle LED_2 für das mittlere Sensorelement 1420, erfasst und
  • ◯ das die Pumpstrahlung LB_2 für das mittlere Sensorelement 1420 zum zugeordneten Sensorelement SE, hier dem mittleren Sensorelement 1420, transportiert und
  • ◯ das die Pumpstrahlung LB_2 für das mittlere Sensorelement 1420 aus dem ersten optischen System für das mittlere Sensorelement 1420 auskoppelt und
  • ◯ das das zugeordnete Sensorelement SE, hier das mittlere Sensorelement 1420, mit Pumpstrahlung LB_2 für das mittlere Sensorelement 1420 bestrahlt und
  • ◯ das bevorzugt einen Lichtwellenleiter LWL_2 für das mittlere Sensorelement 1420 als ein solches optisches Funktionselement umfasst,
• • ein zweites optisches System,
  • ◯ das ein oder mehrere optische Funktionselemente umfasst und
  • ◯ das die Fluoreszenzstrahlung FL_2 der NV-Zentren und/oder der paramagnetischen Zentren des zugeordneten Sensorelements SE, hier des mittleren Sensorelements 1420, erfasst und
  • ◯ das Fluoreszenzstrahlung FL_2 der NV-Zentren und/oder der paramagnetischen Zentren des zugeordneten Sensorelements SE, hier des mittleren Sensorelements 1420, zum zugeordneten Fotodetektor PD_2 für das mittlere Sensorelement 1420 transportiert und
  • ◯ das Fluoreszenzstrahlung FL_2 der NV-Zentren und/oder der paramagnetischen Zentren des zugeordneten Sensorelements SE, hier des mittleren Sensorelements 1420, aus dem zweiten optischen System auskoppelt und
  • ◯ das den zugeordneten Fotodetektor PD_2 für das mittlere Sensorelement 1420 mit Fluoreszenzstrahlung FL_2 der NV-Zentren und/oder der paramagnetischen Zentren des zugeordneten Sensorelements SE, hier des mittleren Sensorelements 1420, bestrahlt und
  • ◯ das Funktionselemente, beispielsweise einen dichroitischen Spiegel F1_2 für das mittlere Sensorelement 1420 und/oder einen optischen Filter im Strahlengang, umfasst, die sicherstellen, dass im Wesentlichen keine Pumpstrahlung LB_2 dieser oder anderer Pumpstrahlungsquellen, insbesondere die der Lichtquelle LED_2 und/oder anderer Lichtquellen (LED, LED_1, LED2, LED_3), den Fotodetektor PD_2 für das mittlere Sensorelement 1420 erreicht und
  • ◯ das bevorzugt einen Lichtwellenleiter LWL_2 für das mittlere Sensorelement 1420 als ein solches optisches Funktionselement umfasst und
  • ◯ das Vorrichtungsteile umfassen kann, die mit Vorrichtungsteilen des ersten optischen Systems identisch sind,
• • den Fotodetektor PD_2 für das mittlere Sensorelement 1420, der die Intensität der empfangenen Fluoreszenzstrahlung FL_2 des mittleren Sensorelements 1420, in ein Empfängerausgangssignal S0_2 für das mittlere Sensorelement 1420 wandelt,
• • das Empfängerausgangssignal S0_2 für das mittlere Sensorelement 1420,
• • einen erster Verstärker V1_2 für das Sensorelement SE, hier für das mittlere Sensorelement 1410, zur Verstärkung und/oder Digitalisierung des Empfangssignals S0_2 für das mittlere Sensorelement 1420 zum verstärkten Empfängerausgangssignal S1_2 für das mittlere Sensorelement 1420 bzw. zum digitalisierten Empfängerausgangssignal S1_2 für das mittlere Sensorelement 1420,
• • das verstärkte Empfängerausgangssignal S1_2 für das mittlere Sensorelement 1420 bzw. das digitalisierte Empfängerausgangssignal S1_2 für das mittlere Sensorelement 1420,
• • einen Mehrfachkorrelator LIV_2 für das mittlere Sensorelement 1420, der ein vektorielles Filterausgangssignal S4_2 für das mittlere Sensorelement 1420 in Abhängigkeit vom verstärkten Empfängerausgangssignal S1_2 für das mittlere Sensorelement 1420 bzw. vom digitalisierten Empfängerausgangssignal S1_2 für das mittlere Sensorelement 1420 und dem LED-Modulationssignal S5w_2 für das mittlere Sensorelement 1420 bildet und Daten des vektoriellen Filterausgangssignals S4_2 für das mittlere Sensorelement 1420 der Steuervorrichtung CTR zur Verfügung stellt, insbesondere für die Steuervorrichtung CTR bereithält oder an die Steuervorrichtung CTR oder eine andere Vorrichtung (z.B. den Mustererkennungsvorrichtung MEV) insbesondere zur Auswertung überträgt,
• • ein vektorielles Filterausgangssignal S4_2 für das mittlere Sensorelement 1420, das typischerweise ein Teil des vektoriellen Filterausgangssignals S4 ist und typischerweise von einem Mustererkennungsvorrichtung MEV und/oder der Steuervorrichtung CTR ausgewertet wird.

The second, middle sensor element channel preferably comprises

• • a first signal generator G1_2 for the middle sensor element 1420, which generates the LED modulation signal S5w_2 for the middle sensor element 1420,
• • a light source driver LDRV_2 for the middle sensor element 1420, which sends the transmission signal S5_2 for the middle sensor element 1420 to control the pump radiation source for the middle sensor element 1420, here the light source LED_2 for the middle sensor element 1420, depending on the LED modulation signal S5w_2 for the middle one Sensor element 1420 is generated and preferably the pump radiation source for the middle sensor element 1420, here the light source LED_2 for the middle sensor element 1420, is supplied with electrical energy,
• • a transmission signal S5_2 for the middle sensor element 1420;
• • a pump radiation source for the middle sensor element 1420, here a light source LED_2 for the middle sensor element 1420, which generates the pump radiation LB_2 for the middle sensor element 1420 as a function of the transmission signal S5_2 for the middle sensor element 1420 and, for example, the pump radiation source for the middle sensor element 1420, here is a light source LED_2 for the middle sensor element 1420, only temporarily on and only temporarily off,
• • a first optical system for the middle sensor element 1420,
  • ◯ which includes one or more optical functional elements and
  • ◯ that detects the pump radiation LB_2 for the middle sensor element 1420 of the pump radiation source for the middle sensor element 1420, here the light source LED_2 for the middle sensor element 1420, and
  • ◯ that transports the pump radiation LB_2 for the middle sensor element 1420 to the assigned sensor element SE, here the middle sensor element 1420, and
  • ◯ that couples out the pump radiation LB_2 for the middle sensor element 1420 from the first optical system for the middle sensor element 1420 and
  • ◯ that the assigned sensor element SE, here the middle sensor element 1420, is irradiated with pump radiation LB_2 for the middle sensor element 1420 and
  • ◯ which preferably comprises an optical waveguide LWL_2 for the middle sensor element 1420 as such an optical functional element,
• • a second optical system,
  • ◯ which includes one or more optical functional elements and
  • ◯ that detects the fluorescence radiation FL_2 of the NV centers and/or the paramagnetic centers of the associated sensor element SE, here the middle sensor element 1420, and
  • ◯ the fluorescence radiation FL_2 of the NV centers and/or the paramagnetic centers of the assigned sensor element SE, here the middle sensor element 1420, is transported to the assigned photodetector PD_2 for the middle sensor element 1420 and
  • ◯ the fluorescence radiation FL_2 of the NV centers and/or the paramagnetic centers of the associated sensor element SE, here the middle sensor element 1420, is coupled out of the second optical system and
  • ◯ which irradiates the assigned photodetector PD_2 for the middle sensor element 1420 with fluorescence radiation FL_2 of the NV centers and/or the paramagnetic centers of the assigned sensor element SE, here the middle sensor element 1420, and
  • ◯ which comprises functional elements, for example a dichroic mirror F1_2 for the middle sensor element 1420 and/or an optical filter in the beam path, which ensure that essentially no pump radiation LB_2 of these or other pump radiation sources, in particular that of the light source LED_2 and/or other light sources ( LED, LED_1, LED2, LED_3), the photodetector PD_2 for the middle sensor element 1420 reaches and
  • ◯ which preferably comprises an optical waveguide LWL_2 for the middle sensor element 1420 as such an optical functional element and
  • ◯ which may include device parts that are identical to device parts of the first optical system,
• • the photodetector PD_2 for the middle sensor element 1420, which converts the intensity of the received fluorescence radiation FL_2 of the middle sensor element 1420 into a receiver output signal S0_2 for the middle sensor element 1420,
• • the receiver output signal S0_2 for the middle sensor element 1420,
• • a first amplifier V1_2 for the sensor element SE, here for the middle sensor element 1410, for amplifying and/or digitizing the received signal S0_2 for the middle sensor element 1420 to the amplified receiver output signal S1_2 for the middle sensor element 1420 or to the digitized receiver output signal S1_2 for the middle sensor element 1420,
• • the amplified receiver output signal S1_2 for the middle sensor element 1420 or the digitized receiver output signal S1_2 for the middle sensor element 1420,
• • a multiple correlator LIV_2 for the middle sensor element 1420, which produces a vector filter output signal S4_2 for the middle sensor element 1420 depending on the amplified receiver output signal S1_2 for the middle sensor element 1420 or on the digitized receiver output signal S1_2 for the middle sensor element 1420 and the LED modulation signal S5w_2 for the middle sensor element 1420 forms and provides data of the vector filter output signal S4_2 for the middle sensor element 1420 of the control device CTR, in particular for the control device CTR or transmits it to the control device CTR or another device (e.g. the pattern recognition device MEV), in particular for evaluation,
• • a vectorial filter output signal S4_2 for the middle sensor element 1420, which is typically part of the vectorial filter output signal S4 and is typically evaluated by a pattern recognition device MEV and/or the control device CTR.

• • einen zweiten zweiten Signalgenerator G2_II, der dazu eingerichtet ist, ein zweites Mikrowellenmodulationssignal S5m_II zu erzeugen;
• • eine zweite Wellenleitung (1380, 1880, 2380, 6830, 6980);
• • eine zweite Mikrowellensignalquelle µWG_II, die dazu eingerichtet ist, das zweite Mikrowellensignal µW_II für die zweite Wellenleitung (1380, 1880, 2380, 6830, 6980) in Abhängigkeit von dem zweiten Mikrowellenmodulationssignal S5m_II zu erzeugen und in die zweite Wellenleitung 1380, 1880, 2380, 6830, 6980 einzuspeisen;
• • den Mehrfachkorrelator LIV_2 für das mittlere Sensorelement 1420, der ein vektorielles Filterausgangssignal S4_2 für das mittlere Sensorelement 1420 in Abhängigkeit vom verstärkten Empfängerausgangssignal S1_2 für das mittlere Sensorelement 1420 bzw. vom digitalisierten Empfängerausgangssignal S1_2 für das mittlere Sensorelement 1420 und dem LED-Modulationssignal S5w_2 für das mittlere Sensorelement 1420 und dem zweiten Mikrowellenmodulationssignal S5m_II bildet und Daten des vektoriellen Filterausgangssignals S4_2 für das mittlere Sensorelement 1420 der Steuervorrichtung CTR zur Verfügung stellt, insbesondere für die Steuervorrichtung CTR bereithält oder an die Steuervorrichtung CTR oder eine andere Vorrichtung (z.B. die Mustererkennungsvorrichtung MEV) insbesondere zur Auswertung überträgt.

In a further development, the second sensor element channel includes,

• • a second second signal generator G2_II, which is designed to generate a second microwave modulation signal S5m_II;
• • a second waveguide (1380, 1880, 2380, 6830, 6980);
• • a second microwave signal source µWG_II, which is set up to generate the second microwave signal µW_II for the second waveline (1380, 1880, 2380, 6830, 6980) as a function of the second microwave modulation signal S5m_II and into the second waveline 1380, 1880, 2380, 6830, 6980 to feed in;
• • the multiple correlator LIV_2 for the middle sensor element 1420, which produces a vector filter output signal S4_2 for the middle sensor element 1420 depending on the amplified receiver output signal S1_2 for the middle sensor element 1420 or on the digitized receiver output signal S1_2 for the middle sensor element 1420 and the LED modulation signal S5w_2 for the middle sensor element 1420 and the second microwave modulation signal S5m_II and provides data of the vector filter output signal S4_2 for the middle sensor element 1420 of the control device CTR, in particular for the control device CTR or to the control device CTR or another device (eg the pattern recognition device MEV) in particular for Evaluation transfers.

With regard to the functions and the interaction of the sensor element channel-specific device parts (SE(1420); S5w_2, LDRV_2, S5_2, LED_2, LB_2, LWL_2, F1_2, PD_2, S0_2, V1_2, S1_2, LIV_2, S4_2) of the second, middle sensor element channel and the others For parts of the device that are not specific to the sensor element channel, the document presented here refers to the description of the device 69 for the corresponding device parts (SE, S5w, LDRV, S5, LED, LB, LWL, F1, PD, S0, V1, S1, LIV, S4) of one sensor channel 69 and the other non-sensor element channel specific device parts of the device 69 .

Third, right sensor element channel

• • einen ersten Signalgenerator G1_3 für das recte Sensorelement 1430, der das LED-Modulationssignal S5w_3 für das rechte Sensorelement 1430 erzeugt,
• • einen Lichtquellentreiber LDRV_3 für das rechte Sensorelement 1430, der das Sendesignal S5_3 für das rechte Sensorelement 1430 zur Ansteuerung der Pumpstrahlungsquelle für das rechte Sensorelement 1430, hier die Lichtquelle LED_3 für das rechte Sensorelement 1430, in Abhängigkeit von dem LED-Modulationssignal S5w_3 für das rechte Sensorelement 1430 erzeugt und vorzugsweise die Pumpstrahlungsquelle für das rechte Sensorelement 1430, hier die Lichtquelle LED_3 für das rechte Sensorelement 1430, mit elektrischer Energie versorgt,
• • ein Sendesignal S5_3 für das rechte Sensorelement 1430;
• • eine Pumpstrahlungsquelle für das rechte Sensorelement 1430, hier eine Lichtquelle LED_3 für das rechte Sensorelement 1430, die die Pumpstrahlung LB_3 für das rechte Sensorelement 1430 in Abhängigkeit von dem Sendesignal S5_3 für das rechte Sensorelement 1430 erzeugt und beispielsweise die Pumpstrahlungsquelle für das rechte Sensorelement 1430, hier eine Lichtquelle LED_3 für das rechte Sensorelement 1430, nur zeitweise ein und nur zeitweise ausschaltet,
• • ein erstes optisches System für das rechte Sensorelement 1430,
  • ◯ das ein oder mehrere optische Funktionselemente umfasst und
  • ◯ das die Pumpstrahlung LB_3 für das rechte Sensorelement 1430 der Pumpstrahlungsquelle für das rechte Sensorelement 1430, hier der Lichtquelle LED_3 für das rechte Sensorelement 1430, erfasst und
  • ◯ das die Pumpstrahlung LB_3 für das rechte Sensorelement 1430 zum zugeordneten Sensorelement SE, hier dem rechten Sensorelement 1430, transportiert und
  • ◯ das die Pumpstrahlung LB_3 für das rechte Sensorelement 1430 aus dem ersten optischen System für das rechte Sensorelement 1430 auskoppelt und
  • ◯ das das zugeordnete Sensorelement SE, hier das rechte Sensorelement 1430, mit Pumpstrahlung LB_3 für das rechte Sensorelement 1430 bestrahlt und
  • ◯ das bevorzugt einen Lichtwellenleiter LWL_3 für das rechte Sensorelement 1430 als ein solches optisches Funktionselement umfasst,
• • ein zweites optisches System,
  • ◯ das ein oder mehrere optische Funktionselemente umfasst und
  • ◯ das die Fluoreszenzstrahlung FL_3 der NV-Zentren und/oder der paramagnetischen Zentren des zugeordneten Sensorelements SE, hier des rechten Sensorelements 1430, erfasst und
  • ◯ das Fluoreszenzstrahlung FL_3 der NV-Zentren und/oder der paramagnetischen Zentren des zugeordneten Sensorelements SE, hier des rechten Sensorelements 1430, zum zugeordneten Fotodetektor PD_3 für das rechte Sensorelement 1430 transportiert und
  • ◯ das Fluoreszenzstrahlung FL_3 der NV-Zentren und/oder der paramagnetischen Zentren des zugeordneten Sensorelements SE, hier des rechten Sensorelements 1430, aus dem zweiten optischen System auskoppelt und
  • ◯ das den zugeordneten Fotodetektor PD_3 für das rechte Sensorelement 1430 mit Fluoreszenzstrahlung FL_3 der NV-Zentren und/oder der paramagnetischen Zentren des zugeordneten Sensorelements SE, hier des rechten Sensorelements 1430, bestrahlt und
  • ◯ das Funktionselemente, beispielsweise einen dichroitischen Spiegel F1_3 für das rechte Sensorelement 1430 und/oder einen optischen Filter im Strahlengang, umfasst, die sicherstellen, dass im Wesentlichen keine Pumpstrahlung LB_3 dieser oder anderer Pumpstrahlungsquellen, insbesondere die der Lichtquelle LED_3 und/oder anderer Lichtquellen (LED, LED_1, LED2, LED_3), den Fotodetektor PD_3 für das rechte Sensorelement 1430 erreicht und
  • ◯ das bevorzugt einen Lichtwellenleiter LWL_3 für das rechte Sensorelement 1430 als ein solches optisches Funktionselement umfasst und
  • ◯ das Vorrichtungsteile umfassen kann, die mit Vorrichtungsteilen des ersten optischen Systems identisch sind,
• • den Fotodetektor PD_3 für das rechte Sensorelement 1430, der die Intensität der empfangenen Fluoreszenzstrahlung FL_3 des rechten Sensorelements 1430, in ein Empfängerausgangssignal S0_3 für das rechte Sensorelement 1430 wandelt,
• • das Empfängerausgangssignal S0_3 für das rechte Sensorelement 1430,
• • einen erster Verstärker V1_23 für das Sensorelement SE, hier für das rechte Sensorelement 1430, zur Verstärkung und/oder Digitalisierung des Empfangssignals S0_3 für das rechte Sensorelement 1430 zum verstärkten Empfängerausgangssignal S1_3 für das rechte Sensorelement 1430 bzw. zum digitalisierten Empfängerausgangssignal S1_3 für das rechte Sensorelement 1430,
• • das verstärkte Empfängerausgangssignal S1_3 für das rechte Sensorelement 1430 bzw. das digitalisierte Empfängerausgangssignal S1_3 für das rechte Sensorelement 1430,
• • einen Mehrfachkorrelator LIV_3 für das rechte Sensorelement 1430, der ein vektorielles Filterausgangssignal S4_3 für das rechte Sensorelement 1430 in Abhängigkeit vom verstärkten Empfängerausgangssignal S1_3 für das rechte Sensorelement 1430 bzw. vom digitalisierten Empfängerausgangssignal S1_3 für das rechte Sensorelement 30e0 und dem LED-Modulationssignal S5w_3 für das rechte Sensorelement 1430 bildet und Daten des vektoriellen Filterausgangssignals S4_3 für das rechte Sensorelement 1430 der Steuervorrichtung CTR zur Verfügung stellt, insbesondere für die Steuervorrichtung CTR bereithält oder an die Steuervorrichtung CTR oder eine andere Vorrichtung (z.B. den Mustererkennungsvorrichtung MEV) insbesondere zur Auswertung überträgt,
• • ein vektorielles Filterausgangssignal S4_3 für das rechte Sensorelement 1430, das typischerweise ein Teil des vektoriellen Filterausgangssignals S4 ist und typischerweise von einem Mustererkennungsvorrichtung MEV und/oder der Steuervorrichtung CTR ausgewertet wird.

The third, right sensor element channel preferably comprises

• • a first signal generator G1_3 for the right sensor element 1430, which generates the LED modulation signal S5w_3 for the right sensor element 1430,
• • a light source driver LDRV_3 for the right sensor element 1430, which sends the transmission signal S5_3 for the right sensor element 1430 to control the pump radiation source for the right sensor element 1430, here the light source LED_3 for the right sensor element 1430, depending on the LED modulation signal S5w_3 for the right one Sensor element 1430 is generated and preferably the pump radiation source for the right sensor element 1430, here the light source LED_3 for the right sensor element 1430, is supplied with electrical energy,
• • a transmission signal S5_3 for the right sensor element 1430;
• • a pump radiation source for the right sensor element 1430, here a light source LED_3 for the right sensor element 1430, which generates the pump radiation LB_3 for the right sensor element 1430 depending on the transmission signal S5_3 for the right sensor element 1430 and, for example, the Pump radiation source for the right sensor element 1430, here a light source LED_3 for the right sensor element 1430, only switches on temporarily and switches off only temporarily,
• • a first optical system for the right sensor element 1430,
  • ◯ which includes one or more optical functional elements and
  • ◯ which detects the pump radiation LB_3 for the right sensor element 1430 of the pump radiation source for the right sensor element 1430, here the light source LED_3 for the right sensor element 1430, and
  • ◯ that transports the pump radiation LB_3 for the right sensor element 1430 to the assigned sensor element SE, here the right sensor element 1430, and
  • ◯ that couples out the pump radiation LB_3 for the right sensor element 1430 from the first optical system for the right sensor element 1430 and
  • ◯ that the assigned sensor element SE, here the right sensor element 1430, is irradiated with pump radiation LB_3 for the right sensor element 1430 and
  • ◯ which preferably comprises an optical waveguide LWL_3 for the right sensor element 1430 as such an optical functional element,
• • a second optical system,
  • ◯ which includes one or more optical functional elements and
  • ◯ which detects the fluorescence radiation FL_3 of the NV centers and/or the paramagnetic centers of the associated sensor element SE, here the right sensor element 1430, and
  • ◯ the fluorescence radiation FL_3 of the NV centers and/or the paramagnetic centers of the associated sensor element SE, here the right sensor element 1430, is transported to the associated photodetector PD_3 for the right sensor element 1430 and
  • ◯ the fluorescence radiation FL_3 of the NV centers and/or the paramagnetic centers of the associated sensor element SE, here the right sensor element 1430, is coupled out of the second optical system and
  • ◯ which irradiates the assigned photodetector PD_3 for the right sensor element 1430 with fluorescence radiation FL_3 of the NV centers and/or the paramagnetic centers of the assigned sensor element SE, here the right sensor element 1430, and
  • ◯ which comprises functional elements, for example a dichroic mirror F1_3 for the right sensor element 1430 and/or an optical filter in the beam path, which ensure that essentially no pump radiation LB_3 of these or other pump radiation sources, in particular that of the light source LED_3 and/or other light sources ( LED, LED_1, LED2, LED_3), the photodetector PD_3 for the right sensor element 1430 reaches and
  • ◯ which preferably comprises an optical waveguide LWL_3 for the right sensor element 1430 as such an optical functional element and
  • ◯ which may include device parts that are identical to device parts of the first optical system,
• • the photodetector PD_3 for the right sensor element 1430, which converts the intensity of the received fluorescence radiation FL_3 of the right sensor element 1430 into a receiver output signal S0_3 for the right sensor element 1430,
• • the receiver output signal S0_3 for the right sensor element 1430,
• • a first amplifier V1_23 for the sensor element SE, here for the right sensor element 1430, for amplifying and/or digitizing the received signal S0_3 for the right sensor element 1430 to the amplified receiver output signal S1_3 for the right sensor element 1430 or to the digitized receiver output signal S1_3 for the right sensor element 1430,
• • the amplified receiver output signal S1_3 for the right sensor element 1430 or the digitized receiver output signal S1_3 for the right sensor element 1430,
• • a multiple correlator LIV_3 for the right sensor element 1430, which produces a vector filter output signal S4_3 for the right sensor element 1430 depending on the amplified receiver output signal S1_3 for the right sensor element 1430 or on the digitized receiver output signal nal S1_3 for the right sensor element 30e0 and the LED modulation signal S5w_3 for the right sensor element 1430 and provides data of the vector filter output signal S4_3 for the right sensor element 1430 to the control device CTR, in particular for the control device CTR or to the control device CTR or one other device (e.g. the pattern recognition device MEV) in particular for evaluation,
• • a vectorial filter output signal S4_3 for the right sensor element 1430, which is typically part of the vectorial filter output signal S4 and is typically evaluated by a pattern recognition device MEV and/or the control device CTR.

• • einen dritte zweiten Signalgenerator G2_III, der dazu eingerichtet ist, ein drittes Mikrowellenmodulationssignal S5m_III zu erzeugen;
• • eine dritte Wellenleitung (1380, 1880, 2380, 6830, 6980);
• • eine dritte Mikrowellensignalquelle gWG_III, die dazu eingerichtet ist, das dritte Mikrowellensignal µW_III für die dritte Wellenleitung (1380, 1880, 2380, 6830, 6980) in Abhängigkeit von dem dritten Mikrowellenmodulationssignal S5m_III zu erzeugen und in die dritte Wellenleitung 1380, 1880, 2380, 6830, 6980 einzuspeisen;
• • den Mehrfachkorrelator LIV_3 für das rechte Sensorelement 1430, der ein vektorielles Filterausgangssignal S4_3 für das rechte Sensorelement 1430 in Abhängigkeit vom verstärkten Empfängerausgangssignal S1_3 für das rechte Sensorelement 1430 bzw. vom digitalisierten Empfängerausgangssignal S1_3 für das rechte Sensorelement 1430 und dem LED-Modulationssignal S5w_3 für das rechte Sensorelement 1430 und dem dritten Mikrowellenmodulationssignal S5m_III bildet und Daten des vektoriellen Filterausgangssignals S4_3 für das rechte Sensorelement 1430 der Steuervorrichtung CTR zur Verfügung stellt, insbesondere für die Steuervorrichtung CTR bereithält oder an die Steuervorrichtung CTR oder eine andere Vorrichtung (z.B. die Mustererkennungsvorrichtung MEV) insbesondere zur Auswertung überträgt.

In a further development, the third sensor element channel includes,

• • a third second signal generator G2_III, which is designed to generate a third microwave modulation signal S5m_III;
• • a third waveguide (1380, 1880, 2380, 6830, 6980);
• • a third microwave signal source gWG_III, which is set up to generate the third microwave signal μW_III for the third waveline (1380, 1880, 2380, 6830, 6980) as a function of the third microwave modulation signal S5m_III and into the third waveline 1380, 1880, 2380, 6830, 6980 to feed in;
• • the multiple correlator LIV_3 for the right sensor element 1430, which produces a vector filter output signal S4_3 for the right sensor element 1430 depending on the amplified receiver output signal S1_3 for the right sensor element 1430 or on the digitized receiver output signal S1_3 for the right sensor element 1430 and the LED modulation signal S5w_3 for the right sensor element 1430 and the third microwave modulation signal S5m_III and provides data of the vectorial filter output signal S4_3 for the right sensor element 1430 of the control device CTR, in particular for the control device CTR or to the control device CTR or another device (e.g. the pattern recognition device MEV) in particular for Evaluation transfers.

With regard to the functions and the interaction of the sensor element channel-specific device parts (SE(1430); S5w_3, LDRV_3, S5_3, LED_3, LB_3, LWL_3, F1_3, PD_3, S0_3, V1_3, S1_3, LIV_3, S4_3) of the third, right sensor element channel and the others For parts of the device that are not specific to the sensor element channel, the document presented here refers to the description of the device 69 for the corresponding device parts (SE, S5w, LDRV, S5, LED, LB, LWL, F1, PD, S0, V1, S1, LIV, S4) of one sensor channel 69 and the other non-sensor element channel specific device parts of the device 69 .

The arrangement of the sensor elements 1410, 1420 1430 and the lines 1310, 1320, 1330 on the carrier substrate 1360 with the preferred presence of a magnetic field generating means Lc, for example a flat coil 2520, essentially corresponds to the arrangements of 68 and 67 .

Alternative use of a slotted line 1880

Omitting the signal conductor 1330 transforms the triplate line 2380 into a slot line 1880. The left sensor element 1410 is then preferably placed on the electrically conductive left signal ground surface 1310 of the exemplary slot line 1880 to the left of the slot 1840 of the slot line 1880 near the edge of the slot 1840 of the slot line 1880 . The right sensor element 1430 is then preferably placed on the electrically conductive right signal ground surface 1320 of the exemplary slot line 1880 to the right of the slot 1840 of the slot line 1880 near the edge of slot 1840 of the slot line 1880. The middle sensor element 1420 is then preferably placed as centrally as possible in the slot 1840 of the slot line 1880.

Since the sensitivities of the sensor elements 1410, 1420, 1430 are different than those when using a tri-plate line 2380, the parameters that the device parts use may need to be adjusted.

Alternative use of a 1380 microstrip line

Omitting the electrically conductive left signal ground plane 1310 and the electrically conductive right signal ground plane 1320 transforms the triplate line 2380 into a microstrip line 1380. The left Sensor element 1410 is then preferably placed on the electrically substantially non-conductive left insulation surface 1340 of the exemplary microstrip line 1380 to the left of the signal conductor 1330 of the microstrip line 1380 near the edge of the signal conductor 1330 of the microstrip line 1380. The right sensor element 1430 is then preferably placed on the electrically substantially non-conductive right insulation surface 1350 of the exemplary microstrip line 1380 to the right of the signal conductor 1330 of the microstrip line 1380 near the edge of the signal conductor 1330 of the microstrip line 1380. The middle sensor element 1420 is then preferably placed as centrally as possible on the signal conductor 1330 of the microstrip line 1380.

Since the sensitivities of the sensor elements 1410, 1420, 1430 are different than those when using a slot line 1880, the parameters that the device parts use may need to be adjusted. In the case of using a tri-plate line 2380, the parameter differences between the parameters that the device parts use in the case of a tri-plate line 2380 and the parameters that the device parts use in the case of a microstrip line 1380 are typically smaller .

Simplification without left sensor element 1410

If the left sensor element 1410 is omitted, the sensor element channel-specific device parts (SE(1410); S5w_1, LDRV_1, S5_1, LED_1, LB_1, LWL_1, F1_1, PD_1, S0_1, V1_1, S1_1, LIV_1, S4_1) of the first left sensor element channel can also be used omitted. The processing of the vectorial filter output signal S4, which is then reduced in dimensionality, by the pattern recognition device MEV and/or the control device CTR must then be adapted accordingly.

Simplification without right sensor element 1430

If the right sensor element 1430 is omitted, the sensor element channel-specific device parts (SE(1430); S5w_3, LDRV_3, S5_3, LED_3, LB_3, LWL_3, F1_3, PD_3, S0_3, V1_3, S1_3, LIV_3, S4_3) of the third right sensor element channel can also be used omitted. The processing of the vectorial filter output signal S4, which is then reduced in dimensionality, by the pattern recognition device MEV and/or the control device CTR must then be adapted accordingly.

Simplification without middle sensor element 1420

If the middle sensor element 1420 is omitted, the sensor element channel-specific device parts (SE(1420); S5w_2, LDRV_2, S5_2, LED_2, LB_2, LWL_2, F1_2, PD_2, S0_2, V1_2, S1_2, LIV_2, S4_2) of the second middle sensor element channel can also be used omitted. The processing of the vectorial filter output signal S4, which is then reduced in dimensionality, by the pattern recognition device MEV and/or the control device CTR must then be adapted accordingly. However, such a device is not or only slightly sensitive to components of the magnetic flux density that are perpendicular to the surface of the carrier substrate 1370 or whose components of the magnetic flux density are parallel to the signal line 1330.

Simplification only with left sensor element 1410

If the right sensor element 1430 and the middle sensor element 1420 are omitted, the sensor element channel-specific device parts (SE(1420); S5w_2, LDRV_2, S5_2, LED_2, LB_2, LWL_2, F1_2, PD_2, S0_2, V1_2, S1_2, LIV_2, S4_2) the second middle sensor element channel and (SE(1430); S5w_3, LDRV_3, S5_3, LED_3, LB_3, LWL_3, F1_3, PD_3, S0_3, V1_3, S1_3, LIV_3, S4_3) of the third right sensor element channel are also omitted. The processing of the vectorial filter output signal S4, which is then reduced in dimensionality, by the pattern recognition device MEV and/or the control device CTR must then be adapted accordingly. However, such a device is not or only slightly sensitive to portions of the magnetic flux density that are perpendicular to the surface of the carrier substrate 1370 or whose flux density vector is parallel to the signal line 1330.

Simplification only with right sensor element 1430

If the left sensor element 1410 and the middle sensor element 1420 are omitted, the sensor element channel-specific device parts (SE(1420); S5w_2, LDRV_2, S5_2, LED_2, LB_2, LWL_2, F1_2, PD_2, S0_2, V1_2, S1_2, LIV_2, S4_2) the second middle sensor element channel and (SE(1410); S5w_1, LDRV_1, S5_1, LED_1, LB_1, LWL_1, F1_1, PD_1, S0_1, V1_1, S1_1, LIV_1, S4_1) of the The first left sensor element channel is also omitted. The processing of the vectorial filter output signal S4, which is then reduced in dimensionality, by the pattern recognition device MEV and/or the control device CTR must then be adapted accordingly. However, such a device is not or only slightly sensitive to portions of the magnetic flux density that are perpendicular to the surface of the carrier substrate 1370 or whose flux density vector is parallel to the signal line 1330.

Simplification only with middle sensor element 1420

If the left sensor element 1430 and the right sensor element 1430 are omitted, the sensor element channel-specific device parts SE(1430); S5w_3, LDRV_3, S5_3, LED_3, LB_3, LWL_3, F1_3, PD_3, S0_3, V1_3, S1_3, LIV_3, S4_3) of the third right sensor element channel and (SE(1410); S5w_1, LDRV_1, S5_1, LED_1, LB_1, LWL_1, F1_1 , PD_1, S0_1, V1_1, S1_1, LIV_1, S4_1) of the first left sensor element channel are also omitted. The processing of the vectorial filter output signal S4, which is then reduced in dimensionality, by the pattern recognition device MEV and/or the control device CTR must then be adapted accordingly. However, such a device is not or only slightly sensitive to portions of the magnetic flux density that are aligned parallel to the surface of the carrier substrate 1370.

Of course, it is conceivable that the device has additional carrier substrates with waveguides (2380, 1880, 1380, 6830) and sensor elements (SE, 1410, 1420, 1430, 1710, 2210, 2410, 2420, 2430, 4410, 7115, 7125, 1735, 7145 and 7155) and preferably for each sensor element each preferably a sensor element channel with corresponding device parts corresponding to the device parts (SE, S5w, LDRV, S5, LED, LB, LWL, F1, PD, S0, V1, S1, LIV, S4) of a sensor channel 58 includes. Particularly preferred are devices which have two waveguides (2380, 1880, 1380, 6830), each with one or more sensor elements (SE, 1410, 1420, 1430, 1710, 2210, 2410, 2420, 2430, 4410, 7115, 7125, 1735, 7145 and 7155) and associated sensor element channels and device parts independent of the sensor element channel, in which the waveguides are arranged perpendicular to one another. Particularly preferred are devices which have two waveguides (2380, 1880, 1380, 6830), each with one or more sensor elements (SE, 1410, 1420, 1430, 1710, 2210, 2410, 2420, 2430, 4410, 7115, 7125, 1735, 7145 and 7155) and associated sensor element channels and device parts independent of the sensor element channel, in which the waveguides are arranged perpendicular to one another in the plane of the surface of one of the carrier substrates 1370. (Please refer 91 ) Particularly preferred are devices which have two waveguides (2380, 1880, 1380, 6830), each with one or more sensor elements (SE, 1410, 1420, 1430, 1710, 2210, 2410, 2420, 2430, 4410, 7115, 7125, 1735 , 7145 and 7155) and associated sensor element channels and device parts independent of the sensor element channel, in which the waveguides are arranged perpendicular to one another on the surface of the same carrier substrate 1370.

Typically, sensor elements (1410, 1420, 1430) of a waveguide (2380, 1880, 1380, 6830) have one or more common flat coils 2520 as a common magnetic field generating means Lc. The control device CTR and/or the magnetic field controller LCTR preferably determine a value for the total flux density B _Σ and compares this determined value of the total flux density B _Σ with a target value. The control device CTR and/or the magnetic field controller LCTR preferably determine the value for the total flux density B _Σ by evaluating the vector filter output signal S4 and/or by means of a magnetic field sensor MS and a magnetic field sensor control SIS.

Vector sensor element channel

In the sense of the document presented here, the majority of the sensor elements (SE, 1410, 1420, 1430, 1710, 2210, 2410, 2420, 2430, 4410, 7115, 7125, 1735, 7145 and 7155) can also be understood as a vector sensor element SE that a plurality of separate fluorescence radiation signals (FL_1, FL_2, FL_3) are generated as a vector fluorescence radiation signal FL upon irradiation with pump radiation LB of the pump radiation wavelength λ _pmp .

The proposed device can typically have several vector sensor element channels and vector sensor elements SE. The proposed vectorial device preferably comprises at least one vectorial sensor element channel with preferably at least two sensor element channels. In the example of the 60 For example, the proposed device includes a three-dimensional vectorial sensor element channel with three sensor element channels and a three-dimensional vectorial sensor element with three sensor elements (SE, 1410, 1420, 1430).

• • einen ersten Signalgenerator G1, der ein LED-Modulationssignal S5w erzeugt, oder einen ersten vektoriellen Signalgenerator G1 umfassend mehrere Signalgeneratoren (G1_1, G1_2, G1,_3), der ein vektorielles LED-Modulationssignal S5w umfassen mehrere LED-Modulationssignale (S5w_1, S5w_2, S5w_3) erzeugt,
• • einen vektoriellen Lichtquellentreiber LDRV umfassend mehrere Lichtquellentreiber (LDRV_1, LDRV_2, LDRV_3), der das vektorielle Sendesignal S5 für die vektorielle Pumpstrahlungsquelle, hier die vektorielle Lichtquelle LED, in Abhängigkeit von dem vektoriellen LED-Modulationssignal S5w und/oder dem LED-Modulationssignal S5w erzeugt und vorzugsweise die vektorielle Pumpstrahlungsquelle, hier die Lichtquellen (LED_1, LED_2, LED_3) der vektoriellen Lichtquelle LED, mit elektrischer Energie versorgt,
• • ein vektorielles Sendesignal S5, umfassen mehrere Sendesignale (S5_1, S5_2, S5_3),
• • eine vektorielle Pumpstrahlungsquelle, hier eine vektorielle Lichtquelle LED, die die vektorielle Pumpstrahlung LB in Abhängigkeit von dem vektoriellen Sendesignal S5 erzeugt und beispielsweise die Pumpstrahlungsquelle, hier eine vektorielle Lichtquelle LED umfassen mehrere Lichtquellen (LED_1, LED_2, LED_3,), nur zeitweise und/oder teilweise ein- und nur zeitweise und/oder teilweise ausschaltet,
• • ein erstes vektorielles optisches System,
  • ◯ das ein oder mehrere vektorielle optische Funktionselemente umfasst und
  • ◯ das die vektorielle Pumpstrahlung LB der vektoriellen Pumpstrahlungsquelle, hier der vektoriellen Lichtquelle LED, in vektorieller Weise erfasst, d. h. die die vektoriellen Pumpstrahlungskomponenten (LB_1, LB2, LB3) separat erfasst, und
  • ◯ das die erfasste vektorielle Pumpstrahlung LB vektoriell, d.h. im Wesentlichen ohne Vermischung der vektoriellen Pumpstrahlungskomponenten (LB_1, LB_2, LB_3) und ohne ungleichmäßige Dämpfung oder Modifikation der vektoriellen Pumpstrahlungskomponenten (LB_1, LB_2, LB_3), zum zugeordneten vektoriellen Sensorelement SE, d.h. zu den zugeordneten Sensorelementen (z.B. 1410, 1420, 1430) transportiert und
  • ◯ das die vektorielle Pumpstrahlung LB aus dem ersten vektoriellen optischen System vektoriell auskoppelt, d.h. im Wesentlichen ohne Vermischung der vektoriellen Pumpstrahlungskomponenten (LB_1, LB_2, LB_3) und ohne ungleichmäßige Dämpfung oder Modifikation der vektoriellen Pumpstrahlungskomponenten (LB_1, LB_2, LB_3) auskoppelt, und
  • ◯ das das zugeordnete vektorielle Sensorelement SE, d.h. die zugeordneten Sensorelemente (z.B. 1410, 1420, 1430), mit vektorieller Pumpstrahlung LB, d.h. mit den Pumpstrahlungskomponenten (LB_1, LB_2, LB_3), bestrahlt, wobei eine Pumpstrahlungskomponenten (LB_1, LB_2, LB_3) bevorzugt einem oder mehreren Sensorelementen (z.B. 1410, 1420, 1430) zugeordnet ist und wobei bevorzugt jedem benutzen Sensorelement (z.B. 1410, 1420, 1430) genau eine Pumpstrahlungskomponente (LB_1, LB_2, LB_3) zugeordnet ist, und
  • ◯ das bevorzugt einen vektoriellen Lichtwellenleiter LWL, der bevorzugt eine Mehrzahl von Lichtwellenleitern (LWL_1, LWL_2, LWL_3), für das vektorielle Sensorelement SE als ein solches vektorielles optisches Funktionselement umfasst,
• • ein zweites vektorielles optisches System,
  • ◯ das ein oder mehrere vektorielle optische Funktionselemente umfasst und
  • ◯ das die vektorielle Fluoreszenzstrahlung FL vektoriell erfasst,
    • • wobei die vektorielle Fluoreszenzstrahlung FL die Fluoreszenzstrahlungen (FL1, FL_2, FL_3) der NV-Zentren und/oder der paramagnetischen Zentren des zugeordneten vektoriellen Sensorelements SE d.h. der Sensorelemente (z.B. 1410, 1420, 1430) als Fluoreszenzstrahlungskomponenten (FL_1, FL_2, FL_3) umfasst und
    • • wobei diese Erfassung durch das zweite vektorielle optische System typischerweise im Wesentlichen ohne Vermischung der vektoriellen Fluoreszenzstrahlungskomponenten (FL_1, FL_2, FL_3) und ohne ungleichmäßige Dämpfung oder Modifikation der vektoriellen Fluoreszenzstrahlungskomponenten (FL_1, FL_2, FL_3) erfolgt, und
  • ◯ das vektorielle Fluoreszenzstrahlung FL der NV-Zentren und/oder der paramagnetischen Zentren des zugeordneten vektoriellen Sensorelements SE zum zugeordneten Fotodetektor PD, umfassend die Fotodetektoren (PD_1, PD_2, PD_3) vektoriell, d.h. im Wesentlichen ohne Vermischung der vektoriellen Fluoreszenzstrahlungskomponenten (FL_1, FL_2, FL_3) und ohne ungleichmäßige Dämpfung oder Modifikation der vektoriellen Fluoreszenzstrahlungskomponenten (FL_1, FL_2, FL_3), transportiert und
  • ◯ das die vektorielle Fluoreszenzstrahlung FL der NV-Zentren und/oder der paramagnetischen Zentren des zugeordneten vektoriellen Sensorelements SE aus dem zweiten vektoriellen optischen System vektoriell, d.h. im Wesentlichen ohne Vermischung der vektoriellen Fluoreszenzstrahlungskomponenten (FL_1, FL_2, FL_3) und ohne ungleichmäßige Dämpfung oder Modifikation der vektoriellen Fluoreszenzstrahlungskomponenten (FL_1, FL_2, FL_3), auskoppelt und
  • ◯ das den zugeordneten vektoriellen Fotodetektor PD umfassend die Fotodetektoren (PD_1, PD_2, PD_3) mit vektorieller Fluoreszenzstrahlung FL umfassend die Fluoreszenzstrahlungen (FL_1, FL_2, FL_3) der NV-Zentren und/oder der paramagnetischen Zentren des zugeordneten vektoriellen Sensorelements SE vektoriell bestrahlt
    • • wobei eine vektorielle Bestrahlung bedeutet,
    • • dass vorzugsweise Fluoreszenzstrahlungskomponenten (FL_1, FL_2, FL_3) vorzugsweise jeweils ein Fotodetektor (PD_1, PD_2, PD_3) des vektoriellen Fotodetektors PD zugeordnet ist und
    • • dass vorzugsweise Fotodetektoren (PD_1, PD_2, PD_3) des vektoriellen Fotodetektors PD vorzugsweise ein oder mehrere der Fluoreszenzstrahlungskomponenten (FL_1, FL_2, FL_3) zugeordnet sind und
    • • dass besonders bevorzugt jeder Fluoreszenzstrahlungskomponente (FL_1, FL_2, FL_3) vorzugsweise genau ein Fotodetektor (PD_1, PD_2, PD_3) des vektoriellen Fotodetektors PD zugeordnet ist und
    • • dass besonders bevorzugt jedem Fotodetektor (PD_1, PD_2, PD_3) des vektoriellen Fotodetektors PD genau eine der Fluoreszenzstrahlungskomponenten (FL_1, FL_2, FL_3) zugeordnet ist und
  • ◯ das Funktionselemente, beispielsweise einen oder mehrere dichroitische Spiegel F1 und/oder einen oder mehrere optische Filter im Strahlengang, umfasst, die sicherstellen, dass im Wesentlichen keine Pumpstrahlung LB dieser oder anderer Pumpstrahlungsquellen, insbesondere die der Lichtquelle LED und/oder anderer Lichtquellen (LED, LED_1, LED2, LED_3), den vektoriellen Fotodetektor PD erreicht und
  • ◯ das bevorzugt einen oder mehrere Lichtwellenleiter LWL oder einen vektoriellen Lichtwellenleiter LWL für das vektorielle Sensorelement SE als ein solches vektorielles optisches Funktionselement umfasst und
    • ▪ wobei der vektoriellen Lichtwellenleiter LWL ein oder mehrere Lichtwellenleiter (LWL_1, LWL_2, LWL_3) mit jeweils einem ersten Ende und einem zweiten Ende umfasst und
    • ▪ wobei vorzugsweise Lichtwellenleiter (LWL_1, LWL_2, LWL_3) des vektoriellen Lichtwellenleiters LWL vorzugsweise einem Sensorelement (SE_1, SE_2, SE_3) des vektoriellen Sensorelements SE an ihrem zweiten Ende zugeordnet sind und
    • ▪ wobei vorzugsweise Lichtwellenleiter (LWL_1, LWL_2, LWL_3) des vektoriellen Lichtwellenleiters LWL vorzugsweise einem Fotodetektor (PD_1, PD_2, PD_3) des vektoriellen Fotodetektors SE an ihrem zweiten Ende zugeordnet sind und
    • ▪ wobei besonders bevorzugt jedem Lichtwellenleiter (LWL_1, LWL_2, LWL_3) des vektoriellen Lichtwellenleiters LWL vorzugsweise genau ein Sensorelement (SE_1, SE_2, SE_3) des vektoriellen Sensorelements SE an seinem ersten Ende zugeordnet ist und
    • ▪ wobei besonders bevorzugt jedem Lichtwellenleiter (LWL_1, LWL_2, LWL_3) des vektoriellen Lichtwellenleiters LWL vorzugsweise genau ein Fotodetektor (PD_1, PD_2, PD_3) des vektoriellen Fotodetektors SE an seinem ersten Ende zugeordnet ist und
  • ◯ das Vorrichtungsteile umfassen kann, die mit Vorrichtungsteilen des ersten optischen Systems identisch sind,
• • den vektoriellen Fotodetektor PD, der die Intensität der empfangenen vektoriellen Fluoreszenzstrahlung FL in ein vektorielles Empfängerausgangssignal S0 wandelt,
• • das vektorielle Empfängerausgangssignal S0, das die Empfängerausgangssignale (S0_1, S0_2, S0_3) umfasst,
• • einen ersten vektoriellen Verstärker V1 für das vektorielle Sensorelement SE zur vektoriellen Verstärkung und/oder vektoriellen Digitalisierung des vektoriellen Empfängerausgangssignal S0 zum verstärkten vektoriellen Empfängerausgangssignal S1 bzw. zum digitalisierten vektoriellen Empfängerausgangssignal S1,
  • ◯ wobei ersten vektoriellen Verstärker V1 einen oder mehrere erste Verstärker (V1_1, V1_2, V1_3) umfasst und
  • ◯ wobei erste Verstärker (V1_1, V1_2, V1_3) des ersten vektoriellen Verstärkers V1 ein Empfängerausgangssignal (S0_1, S0_2, S0_3) des vektoriellen Empfängerausgangssignal S0 zu einem verstärkten Empfängerausgangssignal (S1_1, S1_2, S1_3) des verstärkten vektoriellen Empfängerausgangssignals S1 bzw. zu einem digitalisierten Empfängerausgangssignal (S1_1, S1_2, S1_3) des digitalisierten vektoriellen Empfängerausgangssignal S1 verstärkt oder digitalisiert, und
• • das verstärkte Empfängerausgangssignal S1 bzw. das digitalisierte Empfängerausgangssignal S1, die ein oder mehrere verstärkte Empfängerausgangssignale (S1_1, S1_2, S1_3) des verstärkten vektoriellen Empfängerausgangssignals S1 bzw. zu einem digitalisierten Empfängerausgangssignal (S1_1, S1_2, S1_3) umfassen,
• • einen vektoriellen Mehrfachkorrelator LIV, der ein gemeinsames vektorielles Filterausgangssignal S4 in Abhängigkeit vom vektoriellen verstärkten Empfängerausgangssignal S1 bzw. vom vektoriellen digitalisierten Empfängerausgangssignal S1 und dem vektoriellen LED-Modulationssignal S5w bildet und Daten des vektoriellen Filterausgangssignals S4 der Steuervorrichtung CTR zur Verfügung stellt, insbesondere für die Steuervorrichtung CTR bereithält oder an die Steuervorrichtung CTR oder eine andere Vorrichtung (z.B. die Mustererkennungsvorrichtung MEV) insbesondere zur Auswertung überträgt,
  • ◯ wobei der vektorielle Mehrfachkorrelator LIV typischerweise einen oder mehrere Mehrfachkorrelatoren (LIV_1, LIV_2, LIV_3) umfasst, und
  • ◯ wobei Mehrfachkorrelatoren (LIV_1, LIV_2, LIV_3) des vektoriellen Mehrfachkorrelators LIV, der ein Filterausgangssignal (S4_1, S4_2, S4_3) des gemeinsamen vektoriellen Filterausgangssignals S4 in Abhängigkeit von einem verstärkten Empfängerausgangssignal (S1_1, S1_2, S1_3) des vektoriellen verstärkten Empfängerausgangssignal S1 bzw. von einem digitalisierten Empfängerausgangssignal (S1_1, S1_2, S1_3) des vektoriellen digitalisierten Empfängerausgangssignals S1 und in Abhängigkeit von einem Modulationssignal (S5w_1, S5w_2, S5w_3) des vektoriellen LED-Modulationssignals S5w bildet und Daten des vektoriellen Filterausgangssignals (S4_1, S4_2, S4_3) des gemeinsamen vektoriellen Filterausgangssignals S4 der Steuervorrichtung CTR zur Verfügung stellt, insbesondere für die Steuervorrichtung CTR bereithält oder an die Steuervorrichtung CTR oder eine andere Vorrichtung (z.B. die Mustererkennungsvorrichtung MEV) insbesondere zur Auswertung überträgt,
• • ein gemeinsames vektorielles Filterausgangssignal S4 für das zugeordnete vektorielle Sensorelement SE,
  • ◯ wobei das gemeinsame vektorielle Filterausgangssignal S4 ein oder mehrere vektorielle Filterausgangssignale (S4_1, S4_2, S4_3) umfasst, und
  • ◯ wobei typischerweise eine Mustererkennungsvorrichtung MEV und/oder die Steuervorrichtung CTR ein oder mehrere vektorielle Filterausgangssignale (S4_1, S4_2, S4_3) und/oder das gemeinsame vektorielle Filterausgangssignal S4 auswerten und/oder analysieren und/oder mittels computerimplementierter Verfahren verarbeiten.

Preferably comprises a vector sensor element channel

• • a first signal generator G1, which generates an LED modulation signal S5w, or a first vector signal generator G1 comprising a plurality of signal generators (G1_1, G1_2, G1,_3), which comprises a vector LED modulation signal S5w, a plurality of LED modulation signals (S5w_1, S5w_2, S5w_3) generated,
• • a vectorial light source driver LDRV comprising several light source drivers (LDRV_1, LDRV_2, LDRV_3), which generates the vectorial transmission signal S5 for the vectorial pump radiation source, here the vectorial light source LED, depending on the vectorial LED modulation signal S5w and / or the LED modulation signal S5w and preferably the vector pump radiation source, here the light sources (LED_1, LED_2, LED_3) of the vector light source LED, is supplied with electrical energy,
• • a vector transmission signal S5, include several transmission signals (S5_1, S5_2, S5_3),
• • a vectorial pump radiation source, here a vectorial light source LED, which generates the vectorial pump radiation LB depending on the vectorial transmission signal S5 and, for example, the pump radiation source, here a vectorial light source LED, includes several light sources (LED_1, LED_2, LED_3,), only temporarily and / or partially on and only temporarily and/or partially off,
• • a first vector optical system,
  • ◯ which includes one or more vector optical functional elements and
  • ◯ which detects the vectorial pump radiation LB of the vectorial pump radiation source, here the vectorial light source LED, in a vectorial manner, ie which detects the vectorial pump radiation components (LB_1, LB2, LB3) separately, and
  • ◯ that the detected vector pump radiation LB vectorially, ie essentially without mixing of the vector pump radiation components (LB_1, LB_2, LB_3) and without uneven attenuation or modification of the vector pump radiation components (LB_1, LB_2, LB_3), to the assigned vector sensor element SE, ie to the assigned sensor elements (e.g. 1410, 1420, 1430) are transported and
  • ◯ that vectorially decouples the vectorial pump radiation LB from the first vectorial optical system, that is, essentially without mixing the vectorial pump radiation components (LB_1, LB_2, LB_3) and without uneven attenuation or modification of the vectorial pump radiation components (LB_1, LB_2, LB_3), and
  • ◯ that the assigned vector sensor element SE, ie the assigned sensor elements (e.g. 1410, 1420, 1430), is irradiated with vector pump radiation LB, ie with the pump radiation components (LB_1, LB_2, LB_3), whereby a pump radiation component (LB_1, LB_2, LB_3) is preferably assigned to one or more sensor elements (e.g. 1410, 1420, 1430) and preferably exactly one pump radiation component (LB_1, LB_2, LB_3) is assigned to each sensor element used (e.g. 1410, 1420, 1430), and
  • ◯ which preferably comprises a vectorial optical waveguide LWL, which preferably comprises a plurality of optical waveguides (LWL_1, LWL_2, LWL_3), for the vectorial sensor element SE as such a vectorial optical functional element,
• • a second vector optical system,
  • ◯ which includes one or more vector optical functional elements and
  • ◯ that detects the vectorial fluorescence radiation FL vectorially,
    • • where the vector fluorescence radiation FL is the fluorescence radiation (FL1, FL_2, FL_3) of the NV centers and/or the paramagnetic centers of the associated vector sensor element SE, ie the sensor elements (e.g. 1410, 1420, 1430) as fluorescence radiation components (FL_1, FL_2, FL_3) includes and
    • • wherein this detection by the second vector optical system typically takes place essentially without mixing of the vector fluorescence radiation components (FL_1, FL_2, FL_3) and without non-uniform attenuation or modification of the vector fluorescence radiation components (FL_1, FL_2, FL_3), and
  • ◯ the vectorial fluorescence radiation FL of the NV centers and/or the paramagnetic centers of the associated vectorial sensor element SE to the associated photodetector PD, comprising the photodetectors (PD_1, PD_2, PD_3) vectorially, ie essentially without mixing the vectorial fluorescence radiation components (FL_1, FL_2, FL_3) and without uneven attenuation or modification of the vector fluorescence radiation components (FL_1, FL_2, FL_3), transported and
  • ◯ the vectorial fluorescence radiation FL of the NV centers and/or the paramagnetic centers of the associated vectorial sensor element SE from the second vectorial optical system vectorially, ie essentially without mixing of the vectorial fluorescence radiation components (FL_1, FL_2, FL_3) and without uneven attenuation or modification the vector fluorescence radiation components (FL_1, FL_2, FL_3), coupled out and
  • ◯ which vectorially irradiates the associated vectorial photodetector PD comprising the photodetectors (PD_1, PD_2, PD_3) with vectorial fluorescence radiation FL comprising the fluorescence radiations (FL_1, FL_2, FL_3) of the NV centers and/or the paramagnetic centers of the associated vectorial sensor element SE
    • • where vector irradiation means,
    • • that a photodetector (PD_1, PD_2, PD_3) of the vector photodetector PD is preferably assigned to each of the fluorescence radiation components (FL_1, FL_2, FL_3) and
    • • that preferably photodetectors (PD_1, PD_2, PD_3) of the vector photodetector PD are preferably assigned one or more of the fluorescence radiation components (FL_1, FL_2, FL_3) and
    • • that particularly preferably exactly one photodetector (PD_1, PD_2, PD_3) of the vector photodetector PD is assigned to each fluorescence radiation component (FL_1, FL_2, FL_3) and
    • • that particularly preferably exactly one of the fluorescence radiation components (FL_1, FL_2, FL_3) is assigned to each photodetector (PD_1, PD_2, PD_3) of the vector photodetector PD and
  • ◯ which comprises functional elements, for example one or more dichroic mirrors F1 and/or one or more optical filters in the beam path, which ensure that essentially no pump radiation LB from these or other pump radiation sources, in particular that of the light source LED and/or other light sources (LED , LED_1, LED2, LED_3), reaches the vector photodetector PD and
  • ◯ which preferably comprises one or more optical fiber LWL or a vector optical fiber LWL for the vector sensor element SE as such a vector optical functional element and
    • ▪ wherein the vector optical fiber LWL comprises one or more optical fibers (LWL_1, LWL_2, LWL_3), each with a first end and a second end and
    • ▪ wherein preferably optical waveguides (LWL_1, LWL_2, LWL_3) of the vector optical waveguide LWL are preferably assigned to a sensor element (SE_1, SE_2, SE_3) of the vector sensor element SE at their second end and
    • ▪ wherein preferably optical waveguides (LWL_1, LWL_2, LWL_3) of the vector optical waveguide LWL are preferably assigned to a photodetector (PD_1, PD_2, PD_3) of the vector photodetector SE at their second end and
    • ▪ wherein particularly preferably each optical waveguide (LWL_1, LWL_2, LWL_3) of the vector optical waveguide LWL is preferably assigned exactly one sensor element (SE_1, SE_2, SE_3) of the vector sensor element SE at its first end and
    • ▪ whereby particularly preferably each optical waveguide (LWL_1, LWL_2, LWL_3) of the vector optical waveguide LWL is preferably assigned exactly one photodetector (PD_1, PD_2, PD_3) of the vector photodetector SE at its first end and
  • ◯ which may include device parts that are identical to device parts of the first optical system,
• • the vector photodetector PD, which converts the intensity of the received vector fluorescence radiation FL into a vector receiver output signal S0,
• • the vector receiver output signal S0, which includes the receiver output signals (S0_1, S0_2, S0_3),
• • a first vectorial amplifier V1 for the vectorial sensor element SE for vectorial amplification and/or vectorial digitization of the vectorial receiver output signal S0 to the amplified vectorial receiver output signal S1 or to the digitized vectorial receiver output signal S1,
  • ◯ wherein the first vector amplifier V1 comprises one or more first amplifiers (V1_1, V1_2, V1_3) and
  • ◯ wherein the first amplifier (V1_1, V1_2, V1_3) of the first vector amplifier V1 converts a receiver output signal (S0_1, S0_2, S0_3) of the vector receiver output signal S0 to an amplified receiver output signal (S1_1, S1_2, S1_3) of the amplified vector receiver output signal S1 or to a digitized one Receiver output signal (S1_1, S1_2, S1_3) of the digitized vector receiver output signal S1 is amplified or digitized, and
• • the amplified receiver output signal S1 or the digitized receiver output signal S1, which comprise one or more amplified receiver output signals (S1_1, S1_2, S1_3) of the amplified vectorial receiver output signal S1 or a digitized receiver output signal (S1_1, S1_2, S1_3),
• • a vectorial multiple correlator LIV, which forms a common vectorial filter output signal S4 depending on the vectorial amplified receiver output signal S1 or the vectorial digitized receiver output signal S1 and the vectorial LED modulation signal S5w and makes data of the vectorial filter output signal S4 available to the control device CTR, in particular for the The control device CTR is available or transmitted to the control device CTR or another device (e.g. the pattern recognition device MEV), in particular for evaluation,
  • ◯ where the vectorial multiple correlator LIV typically comprises one or more multiple correlators (LIV_1, LIV_2, LIV_3), and
  • ◯ where multiple correlators (LIV_1, LIV_2, LIV_3) of the vector multiple correlator LIV, which have a filter output signal (S4_1, S4_2, S4_3) of the common vector filter output signal S4 depending on an amplified receiver output signal (S1_1, S1_2, S1_3) of the vector amplified receiver output signal S1 or from a digitized receiver output signal (S1_1, S1_2, S1_3) of the vectorial digitized receiver output signal S1 and depending on a modulation signal (S5w_1, S5w_2, S5w_3) of the vectorial LED modulation signal S5w and data of the vectorial filter output signal (S4_1, S4_2, S4_3) of the common vectorial filter output signal S4 is made available to the control device CTR, in particular for the control device CTR or transmitted to the control device CTR or another device (e.g. the pattern recognition device MEV), in particular for evaluation,
• • a common vector filter output signal S4 for the assigned vector sensor element SE,
  • ◯ wherein the common vector filter output signal S4 comprises one or more vector filter output signals (S4_1, S4_2, S4_3), and
  • ◯ wherein typically a pattern recognition device MEV and/or the control device CTR evaluate and/or analyze one or more vectorial filter output signals (S4_1, S4_2, S4_3) and/or the common vectorial filter output signal S4 and/or process them using computer-implemented methods.

• • einen zweiten Signalgenerator (G2), der dazu eingerichtet ist, ein Mikrowellenmodulationssignal (S5m) zu erzeugen, oder einen zweiten vektoriellen Signalgenerator (G2), der mehrere zweite Signalgeneratoren (G2_1, G2_2, G2_3, G2_4, G2_5) als zweite Signalgeneratorkomponenten umfasst und der dazu eingerichtet ist, ein vektorielles Mikrowellenmodulationssignal (S5m) mit mehreren Mikrowellenmodulationssignalen (S5m_1, S5m_2, S5m_3, S5m_4, S5m_5) als Mikrowellenmodulationssignalkomponenten zu erzeugen;
• • eine Wellenleitung (1380, 1880, 2380, 6830, 6980) oder eine vektorielle Wellenleitung mit mehreren Wellenleitungen als Wellenleitungskomponenten (1380, 1880, 2380, 6830, 6980);
  • ◯ eine Mikrowellensignalquelle (µWG), die dazu eingerichtet ist, das Mikrowellensignal (µW) für die Wellenleitung (1380, 1880, 2380, 6830, 6980) in Abhängigkeit von dem Mikrowellenmodulationssignal (S5m) zu erzeugen und in die Wellenleitung (1380, 1880, 2380, 6830, 6980) einzuspeisen oder
  • ◯ eine vektorielle Mikrowellensignalquelle (µWG), die mehrere Mikrowellensignalquellen (µWG _1, µWG _2, µWG _3, µWG _4, µWG _5) als Mikrowellensignalquellenkomponenten umfasst und die dazu eingerichtet ist, das vektorielle Mikrowellensignal (µW) mit mehreren Mikrowellensignalen (µW_1, µW_2, µW_3, µW_4, µW_5) als Mikrowellensignalkomponenten in Abhängigkeit von dem vektoriellen Mikrowellenmodulationssignal (S5m) und/oder von dem Mikrowellenmodulationssignal (S5m) zu erzeugen und in die vektorielle Wellenleitung einzuspeisen und/oder
  • ◯ eine vektorielle Mikrowellensignalquelle (µWG) aufweist, die mehrere Mikrowellensignalquellen (µWG _1, µWG _2, µWG _3, µWG _4, µWG _5) als Mikrowellensignalquellenkomponenten umfasst und wobei jeweilige Mikrowellensignalquellenkomponenten dazu eingerichtet sind, eine jeweilige Mikrowellensignalkomponente (µW_1, µW_2, µW_3, µW_4, µW_5) des vektorielle Mikrowellensignals (µW) in Abhängigkeit von einer jeweiligen Mikrowellenmodulationssignalkomponente (S5m_1, S5m_2, S5m_3, S5m_4, S5m_5) des vektoriellen Mikrowellenmodulationssignal (S5m) und/oder von dem Mikrowellenmodulationssignal (S5m) zu erzeugen und in die jeweilige Wellenleitungskomponente (1380, 1880, 2380, 6830, 6980) der vektoriellen Wellenleitung einzuspeisen;
• • einen Mehrfachkorrelator (LIV), der dazu eingerichtet ist, ein Filterausgangssignal (S4) in Abhängigkeit vom verstärkten Empfängerausgangssignal (S1) bzw. vom digitalisierten Empfängerausgangssignal (S1) und von dem LED-Modulationssignal (S5w) und von einem Mikrowellenmodulationssignal (S5m) zu bilden oder mehrere Mehrfachkorrelatoren (LIV_1, LIV_2, LIV_3, LIV_4, LIV_5) eines vektoriellen Mehrfachkorrelators (LIV) als Mehrfachkorrelatorkomponenten umfasst, wobei jede der Mehrfachkorrelatorkomponenten (LIV_1, LIV_2, LIV_3, LIV_4, LIV_5) des vektoriellen Mehrfachkorrelators (LIV) jeweils dazu eingerichtet ist, jeweils ein jeweiliges Filterausgangssignal (S4_1, S4_2, S4_3, S4_4, S4_5) als jeweilige Filterausgangssignalkomponente eines gemeinsamen vektoriellen Filterausgangssignals (S4) in jeweiliger Abhängigkeit von der jeweiligen verstärkten Empfängerausgangssignalkomponente (S1_1, S1_2, S1_3, S1_4, S1_5) des vektoriellen verstärkten Empfängerausgangssignals (S1) bzw. in jeweiliger Abhängigkeit von der jeweiligen digitalisierten Empfängerausgangssignalkomponente (S1_1, S1_2, S1_3, S1_4, S1_5) des vektoriellen digitalisierten Empfängerausgangssignals (S1) und in jeweiliger Abhängigkeit von der jeweiligen LED-Modulationssignalkomponente (S5w_1, S5w_2, S5w_3, S5w_4, S5w_5) des vektoriellen LED-Modulationssignal (S5w) und zum ersten in jeweiliger Abhängigkeit von der jeweiligen Mikrowellenmodulationssignalkomponente (S5m_1, S5m_2, S5m_3, S5m_4, S5m_5) des vektoriellen Mikrowellenmodulationssignals (S5m) zu bilden oder zum zweiten in Abhängigkeit von dem Mikrowellenmodulationssignals (S5m) zu bilden.

In a further development, the vector sensor element channel includes,

• • a second signal generator (G2), which is set up to generate a microwave modulation signal (S5m), or a second vector signal generator (G2), which comprises a plurality of second signal generators (G2_1, G2_2, G2_3, G2_4, G2_5) as second signal generator components and which is set up to generate a vector microwave modulation signal (S5m) with a plurality of microwave modulation signals (S5m_1, S5m_2, S5m_3, S5m_4, S5m_5) as microwave modulation signal components;
• • a waveline (1380, 1880, 2380, 6830, 6980) or a vector waveline with multiple wavelines as waveline components (1380, 1880, 2380, 6830, 6980);
  • ◯ a microwave signal source (µWG), which is set up to generate the microwave signal (µW) for the waveguide (1380, 1880, 2380, 6830, 6980) depending on the microwave modulation signal (S5m) and into the waveguide (1380, 1880, 2380, 6830, 6980) or
  • ◯ a vector microwave signal source (µWG), which includes several microwave signal sources (µWG _1, µWG _2, µWG _3, µWG _4, µWG _5) as microwave signal source components and which is designed to combine the vector microwave signal (µW) with several microwave signals (µW_1, µW_2, µW_3, µW_4, µW_5) as microwave signal components depending on the vector microwave modulation signal (S5m) and / or on the microwave modulation signal (S5m) and to feed them into the vector wave line and / or
  • ◯ A vectorial microwave signal source (µwg) has several microwave signal sources (_1, µwg _2, µwg _4, µwg _5) as a microwave signal component and the respective microwave signal component is set up, a respective microwave component (µw_1, µw_2, µw_3, µw_4 , µW_5) of the vector microwave signal (µW) depending on a respective microwave modulation signal component (S5m_1, S5m_2, S5m_3, S5m_4, S5m_5) of the vector microwave modulation signal (S5m) and / or on the microwave modulation signal (S5m) and into the respective waveguide component (1380 , 1880, 2380, 6830, 6980) of the vector wave line;
• • a multiple correlator (LIV), which is designed to produce a filter output signal (S4) depending on the amplified receiver output signal (S1) or on the digitized receiver output signal (S1) and on the LED modulation signal (S5w) and on a microwave modulation signal (S5m). form or comprises several multiple correlators (LIV_1, LIV_2, LIV_3, LIV_4, LIV_5) of a vectorial multiple correlator (LIV) as multiple correlator components, each of the multiple correlator components (LIV_1, LIV_2, LIV_3, LIV_4, LIV_5) of the vectorial multiple correlator (LIV) being set up for this purpose , each a respective filter output signal (S4_1, S4_2, S4_3, S4_4, S4_5) as a respective filter output signal component of a common vectorial filter output signal (S4) depending on the respective amplified receiver output signal component (S1_1, S1_2, S1_3, S1_4, S1_5) of the vectorial amplified receiver output signal ( S1) or depending on the respective digitized receiver output signal component (S1_1, S1_2, S1_3, S1_4, S1_5) of the vectorial digitized receiver output signal (S1) and depending on the respective LED modulation signal component (S5w_1, S5w_2, S5w_3, S5w_4, S5w_5 ) of the vector LED modulation signal (S5w) and firstly depending on the respective microwave modulation signal component (S5m_1, S5m_2, S5m_3, S5m_4, S5m_5) of the vectorial microwave modulation signal (S5m) or secondly depending on the microwave modulation signal (S5m). form.

Figure 72

The 72 shows a differential microstrip line 6880. The exemplary differential microstrip line 6880 of 68 again comprises a preferably not or only slightly electrically conductive carrier substrate 1360. The differential microstrip line 6880 preferably again comprises an electrically conductive back contact 1370 on the underside of the electrically non-conductive carrier substrate 1360. The differential microstrip line 6880 preferably comprises an electrically essentially non-conductive left one Insulation surface 1340 on the top of the electrically non-conductive carrier substrate 1360 and an electrically essentially non-conductive right insulation surface 1350 on the top of the electrically non-conductive carrier substrate 1360. Furthermore, the differential microstrip line 6880 preferably includes a left electrically conductive signal line 6810 on the Top of the electrically non-conductive carrier substrate 1360 between the electrically essentially non-conductive left insulation surface 1340 on the one hand and the electrically insulating gap 6840 between the left signal conductor 6810 and the right signal conductor 6820 of the differential signal conductor 6830 on the other hand. Furthermore, the differential microstrip line 6880 preferably comprises a right electrically conductive signal line 6820 on the top of the electrically non-conductive carrier substrate 1360 between the electrically insulating gap 6840 between the left signal conductor 6810 and the right signal conductor 6820 of the differential signal conductor 6830 on the one hand and the electrically essentially non-conductive right insulation surface 1350 on the other hand. The electrically insulating gap 6840 between the left signal conductor 6810 and the right signal conductor 6820 of the differential signal conductor 6830 electrically insulates the left signal conductor 6810 from the right signal conductor 6820 of the differential signal conductor 6830. The left signal conductor 6810 and the right signal conductor 6820 together form the differential signal conductor 6830 the differential microstrip line 6880. The differential microstrip line 6880 can be controlled with a common mode signal, in which the same signal is time-synchronized in the left signal conductor 6810 and the right signal conductor 6820 of the differential signal conductor 6830 is fed in. This operating state is called common mode control with a common mode signal. The differential microstrip line 6880 can be controlled with a push-pull clock signal, in which the same signal is fed into the left signal conductor 6810 and the right signal conductor 6820 of the differential signal conductor 6830 in a time-synchronous manner, but with a different sign. This operating state is called push-pull control with a push-pull signal.

The differential microstrip line 6880 preferably has a common-mode characteristic impedance for common-mode control and a differential-mode characteristic impedance for differential-mode control in relation to the differential signal conductor 6830 as the “hot” inner conductor.

Such a differential microstrip line 6880 enables simplified control of the sensor elements SE through different use of common-mode and push-pull control.

With common mode control, the differential signal conductor 6830 behaves essentially like the signal conductor 1330 of an exemplary microstrip line 1380. With common mode control, the differential microstrip line 6880 behaves essentially like a microstrip line 1380.

The differential signal conductor 6830 with push-pull control can also be viewed as a special slot line 1880, in which the width of the electrically conductive left signal ground surface 1310 of the slot line 1880 on the top of the electrically non-conductive carrier substrate 1360 has shrunk to the width of the left signal conductor 6810 and at the width of the electrically conductive right signal ground surface 1320 of the slot line 1880 on the top of the electrically non-conductive carrier substrate 1360 has shrunk to the width of the right signal conductor 6820. The electrically insulating gap 6840 between the left signal conductor 6810 and the right signal conductor 6820 of the differential signal conductor 6830 then corresponds to the slot 1840 of the slot line 1880. The distance of the left signal conductor 6810 from the right signal conductor 6810, i.e. the width of the electrically insulating gap 6840 between the left Signal conductor 6810 and the right signal conductor 6820 of the differential signal conductor 6830 therefore correspond in their function to the width d _SL of the slot 1840 of the slot line 1880. This is important in that the following positioning of the sensor elements SE can then be better understood.

72 also shows an example differential tri-plate line 6980. The example differential tri-plate line 6980 includes a differential microstrip line 6880 with a differential signal conductor 6830. The differential microstrip line 6880 has already been explained. The differential tri-plate line 6980 additionally includes an electrically conductive left signal ground surface 1310 and an electrically conductive right signal ground surface 1320.

The electrically conductive left signal ground surface 1310 is spaced and isolated from the left signal conductor 6810 of the differential signal conductor 6830 of the differential microstrip line 6880 of the exemplary differential tri-plate line 6980 by an electrically non-conductive left isolation gap 2340.

The electrically conductive right signal ground surface 1320 is spaced and isolated from the right signal conductor 6820 of the differential signal conductor 6830 of the differential microstrip line 6880 of the exemplary differential tri-plate line 6980 by an electrically non-conductive right isolation gap 2350.

The electrically insulating gap 6840 separates the left signal conductor 6810 from the right signal conductor 6820 of the differential signal conductor 6830 of the differential microstrip line 6880 of the exemplary differential tri-plate line 6980.

As with the differential microstrip line 6880, the differential tri-plate line 6980 has at least two independent characteristic impedances. To simplify matters, the technical teaching of the document presented here assumes that the electrically conductive right signal ground surface 1320 and the electrically conductive right signal ground surface 1320 and the electrically conductive rear contact 1370 are electrically connected to one another or can at least be viewed as signal ground. But this is not necessarily the case. If necessary, they can also be used simultaneously to supply and dissipate electrical energy to device parts that need to be supplied with a direct current or a direct voltage or an alternating voltage. However, such an energy supply is likely to be problematic as a rule because it generates magnetic fields that are undesirable. In the following, the document presented here assumes that, apart from the signals fed in by signal generators to control the Senso relemente SE no further signals are transported via the differential tri-plate line 6980, which is preferred.

The differential tri-plate line 6980 is preferably terminated with connection resistors 6710 at the end opposite the other end of the differential tri-plate line 6980, at which the signals are fed in.

Preferably, the width of the electrically non-conductive left insulation gap 2340 is substantially equal to the width of the electrically non-conductive left insulation gap 2340.

Preferably, the widths of the electrically non-conductive left insulation gap 2340 and the electrically non-conductive left insulation gap 2340 on the one hand and the width of the electrically insulating gap 6840 are set relative to each other so that the common mode characteristic impedance of the differential tri-plate line 6980 when the differential is controlled in common mode Signal conductor 6830 of the differential microstrip line 6880 of the exemplary differential tri-plate line 6980 is essentially equal to the push-pull characteristic impedance of the differential tri-plate line 6980 when the differential signal conductor 6830 of the differential microstrip line 6880 of the exemplary differential tri-plate line 6980 is pushed-pull.

This simplifies the construction of the control circuits (e.g. the microwave signal source µWG) and the terminating resistors 6710.

The exemplary Tri-Plate cable 6980 72 is supplemented by various sensor elements SE at different points on the Tri-Plate cable 6980.

As before, the sensor elements SE should each comprise a large number of diamond nanocrystals ND and/or crystals with different and preferably uniformly distributed spatial orientation. Diamond nanocrystals ND or crystals of the sensor elements SE preferably comprise paramagnetic centers, in particular NV centers, which, when irradiated with a pump radiation LB of a pump radiation wavelength λ _pmp , emit a fluorescence radiation FL with a fluorescence wavelength λ _fl .

In the example of the 72 It is assumed that the sensor elements SE are placed and their size is chosen so that they behave ideally. Here, ideal behavior refers to a placement according to the previous figures for other waveguides, which can also be used here for a differential tri-plate line 6980. Mixed forms using oversized sensor elements SE are of course possible. These mixed forms can also be used here for the sensor elements SE of a differential tri-plate cable 6980.

The difference to the tri-plate line 2380 is that by using a differential signal line 6830 of a differential microstrip line 6880 as part of the differential tri-plate line 6980, two additional positions for the sensor elements SE have been added and that the properties of the sensor elements SE differ according to common-mode characteristics and differential-mode characteristics.

left sensor element SE(1410)

First we call the left sensor element SE(1410). The left sensor element SE (1410) is stronger for common mode signals of the signal fed from the signal generators (e.g. RWG, µWG) into the differential tri-plate line 6980 and less for differential mode signals from the signal generators (e.g. RWG, µWG) into the differential tri -Plate line 6980 sensitive to the signal fed in. For common mode signals, the arrangement of differential tri-plate line 6980 and left sensor element SE(1410) behaves similarly to a tri-plate line 2380 with left sensor element SE(1410) and central signal line 1330. The document presented here refers to this the description of the corresponding 68 , whereby it is assumed that essentially for the common mode control the differential signal line 6830 of the differential microstrip line 6880 of the differential tri-plate line 6980 can be combined into a central signal line 1330 of a tri-plate line 2380 with respect to the common mode control. The push-pull signal also influences the intensity of the fluorescent radiation LB of the left sensor element SE (1410). However, since the signals in the left signal line 6810 of the differential signal line 6830 of the differential microstrip line 6880 of the differential tri-plate line 6980 and the right signal line 6820 of the differential signal line 6830 of the differential microstrip line 6880 of the differential tri-plate line 6980 are different due to the push-pull behavior compensate for the most part, only the influence of the left signal line 6810 of the differential signal line 6830 of the differential microstrip line 6880 of the differential tri-plate line 6980 remains, which is due to the greater proximity between the left sensor element SE (1410) and the left signal line 6810 of the differential signal line 6830 the differential microstrip line 6880 of the differential tri-plate line 6980 overshoots the right signal line 6820 of the differential signal line 6830 of the differential microstrip line 6880 of the differential tri-plate line 6980. However, this is typically significantly less than the influence of the common mode signal. To simplify, the technical teaching of the document presented here assumes that the left sensor element SE (1410) is sensitive to common mode signals from the signal from the signal generators (e.g. RWG, µWG) fed into the differential tri-plate line. Typically, the intensity of the fluorescence radiation FL of the left sensor element SE (1410) depends on the proportion of the total magnetic flux density B _Σ , the component vector of which lies parallel to the surface of the carrier substrate 1360. In summary, the document presented here assumes that the intensity of the fluorescence radiation FL of the left sensor element SE (1410) depends on the proportion of the total magnetic flux density B _Σ , the component vector of which lies parallel to the surface of the carrier substrate 1360, and the common mode signal of the signal generators (e.g. RWG, µWG) depends. This new knowledge can be used for targeted sensor system construction and control of the left sensor element SE(1410) by the signal generators (e.g. RWG, µWG).

right sensor element SE(1430)

The second thing we call here again is the right sensor element SE(1430). The right sensor element SE(1430) is stronger for common-mode signals from the signal fed into the differential tri-plate line 6980 from the signal generators (e.g. RWG, µWG) and less for differential-mode signals from the signal generators (e.g. RWG, µWG) into the differential tri -Plate line 6980 sensitive to the signal fed in. For common mode signals, the arrangement of differential tri-plate line 6980 and right sensor element SE(1430) behaves similarly to a tri-plate line 2380 with right sensor element SE(1430) and central signal line 1330. The document presented here refers to this the description of the corresponding 68 , whereby it is assumed that essentially for the common mode control the differential signal line 6830 of the differential microstrip line 6880 of the differential tri-plate line 6980 can be combined into a central signal line 1330 of a tri-plate line 2380 with respect to the common mode control. The push-pull signal also influences the intensity of the fluorescence radiation LB of the right sensor element SE (1430). However, since the signals in the right signal line 6820 of the differential signal line 6830 of the differential microstrip line 6880 of the differential tri-plate line 6980 and the left signal line 6810 of the differential signal line 6830 of the differential microstrip line 6880 of the differential tri-plate line 6980 are different due to the push-pull To compensate for most of the behavior, only the influence of the right signal line 6820 of the differential signal line 6830 of the differential microstrip line 6880 of the differential tri-plate line 6980 remains, which is due to the greater proximity between the right sensor element SE (1430) and the right signal line 6820 of the differential signal line 6830 of the differential microstrip line 6880 of the differential tri-plate line 6980 overshoots compared to the left signal line 6810 of the differential signal line 6830 of the differential microstrip line 6880 of the differential tri-plate line 6980. However, this is typically significantly lower than the influence of the common mode signal. To simplify, the technical teaching of the document presented here assumes that the right sensor element SE (1430) is sensitive to common mode signals from the signal from the signal generators (e.g. RWG, µWG) fed into the differential tri-plate line. Typically, the intensity I of the fluorescence radiation FL of the right sensor element SE (1430) _depends on the proportion of the total magnetic flux density B _Σ , the component vector of which lies parallel to the surface of the carrier substrate 1360. In summary, the document presented here assumes that the intensity I _of the fluorescence radiation FL of the right sensor element SE (1430) depends on the proportion of the total magnetic flux density B _Σ , the component vector of which lies parallel to the surface of the carrier substrate 1360, and the common mode signal of the signal generators (e.g RWG,µWG) depends. This new knowledge can be used for targeted sensor system construction and control of the right sensor element SE(1430) by the signal generators (e.g. RWG, µWG).

middle sensor element SE(1420)

The third thing we call here again is the middle sensor element SE(1420). The middle sensor element SE(1420) is stronger for differential mode signals from the signal fed into the differential tri-plate line 6980 from the signal generators (e.g. RWG, µWG) and less for common mode signals from the signal generators (e.g. RWG, µWG) into the differential tri -Plate line 6980 sensitive to the signal fed in. The arrangement of the differential tri-plate line 6980 and the middle sensor works for push-pull signals element SE(1420) similar to a slotted cable 1880 with a middle sensor element SE(1430). In this context, the document presented here refers to the description of the 55 , whereby it is assumed that essentially for the push-pull control the left signal line 6810 of the differential signal line 6830 of the differential microstrip line 6880 of the differential tri-plate line 6980 with the electrically conductive left signal ground surface 1310 of the differential tri-plate line 6980 becomes an electrically conductive one left signal ground surface 1310 of a slot line 1880 can be approximately summarized with regard to the push-pull control. The common mode clock signal also influences the intensity I _is the fluorescence radiation LB of the middle sensor element SE (1420), but only due to manufacturing deviations. However, since the signals in the right signal line 6820 of the differential signal line 6830 of the differential microstrip line 6880 of the differential tri-plate line 6980 and the left signal line 6810 of the differential signal line 6830 of the differential microstrip line 6880 of the differential tri-plate line 6980 are different due to the common mode Behavior combined with the difference largely compensated for by the common mode signals in the lines 6810, 6820 of the differential signal line 6830, only the influence of adjustment and manufacturing errors of the middle sensor element 1430 remains, which lead to asymmetries compared to the right signal line 6820 of the differential signal line 6830 of the differential Microstrip line 6880 of the differential tri-plate line 6980 and that of the left signal line 6810 of the differential signal line 6830 of the differential microstrip line 6880 of the differential tri-plate line 6980 lead. To simplify, the technical teaching of the document presented here assumes that the middle sensor element SE (1420) is sensitive to push-pull signals from the signal from the signal generators (e.g. RWG, µWG) fed into the differential tri-plate line 6980. Typically, the intensity I of the fluorescence radiation FL of the middle sensor element SE (1420) _depends on the proportion of the total magnetic flux density B _Σ , the component vector of which lies parallel to the surface of the carrier substrate 1360. In summary, the document presented here assumes that the intensity I of the fluorescence radiation FL of the middle sensor element SE (1420) _depends on the proportion of the total magnetic flux density B _Σ , the component vector of which lies parallel to the surface of the carrier substrate 1360, and the push-pull signal of the signal generators (e.g RWG,µWG) depends. This new knowledge can be used for targeted sensor system construction and control of the middle sensor element SE(1420) by the signal generators (e.g. RWG, µWG).

left line sensor element SE(7110)

The fourth thing we call here is the new left line sensor element SE(7110). The left line sensor element SE(7110) is sensitive to differential mode signals and to common mode signals of the signal fed into the differential tri-plate line 6980 from the signal generators (e.g. RWG, µWG). In this respect, the left line sensor element SE(7110) differs from the left sensor element SE(1410) and the right sensor element SE(1430) and the middle sensor element SE(1430). We therefore distinguish between the behavior of common-mode signals and differential-mode signals of the signal fed into the differential tri-plate line 6980 by the signal generators (RWG, µWG).

Push-pull signals

For push-pull signals, the arrangement of differential tri-plate line 6980 and left line sensor element SE(7110) behaves similarly to a tri-plate line 2380 with middle sensor element SE(1430). In this context, the document presented here refers to the description of the 56 , whereby it is assumed that essentially for the push-pull control the right signal line 6820 of the differential signal line 6830 of the differential microstrip line 6880 of the differential tri-plate line 6980 with the electrically conductive right signal ground surface 1320 of the differential tri-plate line 6980 becomes an electrically conductive one right signal ground surface 1320 of the tri-plate line 2380 with the middle sensor element SE (1430) can be approximately summarized with regard to the push-pull control.

Common mode signals

For common mode signals, the arrangement of differential tri-plate line 6980 and left line sensor element SE(7110) also behaves similarly to a tri-plate line 2380 with middle sensor element SE(1430). In this context, the document presented here refers again to the description of the 56 , but it is now assumed that essentially for the common mode control the right signal line 6820 of the differential signal line 6830 of the differential microstrip line 6880 of the differential tri-plate line 6980 is connected to the left signal line 6810 of the differential signal line 6830 of the differential microstrip line 6880 of the differential tri-plate line. Plate line 6980 to an electrical conductive line 1330 of the tri-plate line 2380 with the middle sensor element SE (1430) can be approximately summarized with regard to the common mode control.

Typically, common mode signals and differential mode signals should influence the intensity of the fluorescence radiation FL of the left line sensor element SE (7110) in essentially the same way.

Summary left line sensor element SE(7110)

Typically, the intensity I _is the fluorescence radiation FL of the left line sensor element SE (7110) from the proportion of the total magnetic flux density B _Σ , the component vector of which is perpendicular to the surface of the carrier substrate 1360 or in the direction of the left signal line 6810 of the differential signal line 6830 of the differential microstrip line 6880 differential tri-plate line 6980, depends. In summary, the document presented here assumes _that the intensity I of the fluorescence radiation FL of the left line sensor element SE (7110) depends on the proportion of the total magnetic flux density B _Σ , the component vector of which is perpendicular to the surface of the carrier substrate 1360 or in the direction of the left signal line 6810 of the differential Signal line 6830 of the differential microstrip line 6880 of the differential tri-plate line 6980 is located, and the differential mode signal and common mode signal of the signal generators (e.g. RWG, μWG). This new knowledge can be used for targeted sensor system construction and control of the left line sensor element SE(7110) by the signal generators (e.g. RWG, µWG).

right line sensor element SE(7120)

The fifth thing we mention here is the new right line sensor element SE(7120). The right line sensor element SE(7120) is also sensitive to differential mode signals and to common mode signals of the signal fed into the differential tri-plate line 6980 by the signal generators (e.g. RWG, µWG). However, the right line sensor element SE(7120) is sensitive to push-pull signals of the opposite sign than the left line sensor element SE(7110). In this respect, the right line sensor element SE(7120) differs from the left sensor element SE(1410) and the right sensor element SE(1430) and the middle sensor element SE(1430) and the left line sensor element SE(7110). We therefore distinguish here again between the behavior of common-mode signals and differential-mode signals of the signal fed into the differential tri-plate line 6980 by the signal generators (RWG, µWG).

Push-pull signals

For push-pull signals, the arrangement of differential tri-plate line 6980 and right line sensor element SE(7120) behaves similarly to a tri-plate line 2380 with middle sensor element SE(1430), with the sign being opposite to the behavior of the left line sensor element SE(7110 ) is inverted. In this context, the document presented here refers to the description of the 56 , whereby it is assumed that essentially for the push-pull control the left signal line 6810 of the differential signal line 6830 of the differential microstrip line 6880 of the differential tri-plate line 6980 with the electrically conductive left signal ground surface 1310 of the differential tri-plate line 6980 to an electrically conductive one left signal ground surface 1310 of the tri-plate line 2380 with the middle sensor element SE (1430) can be approximately summarized with regard to the push-pull control.

Common mode signals

For common mode signals, the arrangement of differential tri-plate line 6980 and right line sensor element SE(7120) also behaves similarly to a tri-plate line 2380 with middle sensor element SE(1430). In this context, the document presented here refers again to the description of the 56 , but it is now assumed that essentially for the common mode control the left signal line 6810 of the differential signal line 6830 of the differential microstrip line 6880 of the differential tri-plate line 6980 is connected to the right signal line 6820 of the differential signal line 6830 of the differential microstrip line 6880 of the differential tri-plate line. Plate line 6980 can be approximately combined into an electrically conductive line 1330 of the tri-plate line 2380 with the middle sensor element SE (1430) with regard to the common mode control.

Typically, common-mode signals and differential-mode signals should influence the intensity I _ist of the fluorescence radiation FL of the right line sensor element SE (7120) in essentially the same way, However, the direction of action of the push-pull signals is now inverted compared to the direction of action of the common-mode signals in the case of the left line sensor element SE (7110).

Summary left line sensor element SE(7110)

Typically, the intensity of the fluorescence radiation FL of the right line sensor element SE (7120) depends on the proportion of the total magnetic flux density B _Σ , the component vector of which is perpendicular to the surface of the carrier substrate 1360 or in the direction of the right signal line 6820 of the differential signal line 6830 of the differential microstrip line 6880 of the differential tri -Plate line 6980 is located, depending. In summary, the document presented here assumes that the intensity I _of the fluorescence radiation FL of the right line sensor element SE (6820) depends on the proportion of the total magnetic flux density Bε, whose component vector is perpendicular to the surface of the carrier substrate 1360 or in the direction of the right signal line 6820 of the differential signal line 6830 of the differential microstrip line 6880 of the differential tri-plate line 6980, and the push-pull signal and common-mode signal of the signal generators (e.g. RWG, μWG). This new knowledge can be used for targeted sensor system construction and control of the right line sensor element SE(7120) by the signal generators (e.g. RWG, µWG).

The vectors of the respective magnetic flux density B _μW that generate the left signal line 6810 of the differential signal line 6830 of the differential microstrip line 6880 of the differential tri-plate line 6980 are shown with thin arrows for clarity.

The vectors of the respective magnetic flux density B _μW that generate the right signal line 6820 of the differential signal line 6830 of the differential microstrip line 6880 of the differential tri-plate line 6980 are shown with bold arrows for clarity.

The vectors (7140, 7150, 7160, 7170, 7180, 7190) of the respective magnetic flux density B _μW of the current supply to the signal lines 6810, 6820 of the differential signal line 6830 of the differential microstrip line 6880 of the exemplary differential tri-plate line 6980 are for push-pull for clarification control the differential signal line 6830, the differential microstrip line 6880, and the exemplary differential tri-plate line 6980. To obtain the representation of the common mode control, it is sufficient, for example, to reverse the directions of the arrows 7170, 7180 and 7190.

Figure 73

The 73 equals to 69 , where the tri-plate line 2380 is replaced by a differential tri-plate line 6980.

1. 1. auf der elektrisch leitenden linken Signalmassefläche 1310,
2. 2. in der nicht-leitenden linken Isolationslücke 2340,
3. 3. auf dem linken Signalleiter 6810 des differentiellen Signalleiters 6830,
4. 4. in der elektrisch isolierenden Lücke 6840 zwischen dem linken Signalleiter 6810 und dem rechten Signalleiter 6820 des differentiellen Signalleiters 6830.
5. 5. auf dem rechten Signalleiter 6820 des differentiellen Signalleiters 6830,
6. 6. in der nicht-leitenden rechten Isolationslücke 2350,
7. 7. auf der elektrisch leitenden rechten Signalmassefläche 1320.

The document presented here indicates that a total of seven positionings of sensor elements SE are possible relative to the lines and line surfaces of the differential tri-plate line 6980:

1. 1. on the electrically conductive left signal ground surface 1310,
2. 2. in the non-conductive left isolation gap 2340,
3. 3. on the left signal conductor 6810 of the differential signal conductor 6830,
4. 4. in the electrically insulating gap 6840 between the left signal conductor 6810 and the right signal conductor 6820 of the differential signal conductor 6830.
5. 5. on the right signal conductor 6820 of the differential signal conductor 6830,
6. 6. in the non-conductive right isolation gap 2350,
7. 7. on the electrically conductive right signal ground surface 1320.

Mixed forms due to incorrect placement and enlargement of the relevant sensor elements SE are possible. This results in 2 ⁷ =128 possible placement combinations at the different 3 sensor element positions, all of which are hereby disclosed to a skilled person.

Figure 74

The 74 equals to 69 , where the tri-plate line 2380 is replaced by a differential microstrip line 6880.

1. 1. auf der elektrisch im Wesentlichen nicht-leitenden linken Isolationsfläche 1340,
2. 2. auf dem linken Signalleiter 6810 des differentiellen Signalleiters 6830,
3. 3. in der elektrisch isolierenden Lücke 6840 zwischen dem linken Signalleiter 6810 und dem rechten Signalleiter 6820 des differentiellen Signalleiters 6830.
4. 4. auf dem rechten Signalleiter 6820 des differentiellen Signalleiters 6830,
5. 5. auf der elektrisch im Wesentlichen nicht-leitenden rechten Isolationsfläche 1350.

The document presented here indicates that a total of five positionings of sensor elements SE are possible relative to the lines and line surfaces of the differential microstrip line 6880:

1. 1. on the essentially electrically non-conductive left insulation surface 1340,
2. 2. on the left signal conductor 6810 of the differential signal conductor 6830,
3. 3. in the electrically insulating gap 6840 between the left signal conductor 6810 and the right signal conductor 6820 of the differential signal conductor 6830.
4. 4. on the right signal conductor 6820 of the differential signal conductor 6830,
5. 5. on the essentially electrically non-conductive right insulation surface 1350.

Mixed forms due to incorrect placement and enlargement of the relevant sensor elements SE are possible. This results in 2 ⁵ =32 possible placement combinations at the different 3 sensor element positions, all of which are hereby disclosed to a skilled person.

Figure 75

The 75 equals to 69 , where the tri-plate line 2380 is replaced by a microstrip line 1380.

1. 1. auf der elektrisch im Wesentlichen nicht-leitenden linken Isolationsfläche 1340,
2. 2. auf dem linken Signalleiter 1330,
3. 3. auf der elektrisch im Wesentlichen nicht-leitenden rechten Isolationsfläche 1350.

The document presented here indicates that a total of three positionings of sensor elements SE are possible relative to the lines and line surfaces of the microstrip line 1380:

1. 1. on the essentially electrically non-conductive left insulation surface 1340,
2. 2. on the left signal conductor 1330,
3. 3. on the essentially electrically non-conductive right insulation surface 1350.

Mixed forms due to incorrect placement and enlargement of the relevant sensor elements SE are possible. This results in 2 ³ =8 possible placement combinations at the different 3 sensor element positions, all of which are hereby disclosed to a skilled person.

Figure 76

The 76 equals to 69 , where the tri-plate line 2380 is replaced by a slot line 1880.

1. 1. auf der elektrisch leitenden linken Signalmassefläche 1310,
2. 2. im Schlitz 1840 der Schlitzleitung 1880
3. 3. auf der elektrisch leitenden rechten Signalmassefläche 1320.

The document presented here indicates that a total of three positionings of sensor elements SE are possible relative to the lines and line surfaces of the slot line 1880:

1. 1. on the electrically conductive left signal ground surface 1310,
2. 2. in slot 1840 of slot line 1880
3. 3. on the electrically conductive right signal ground surface 1320.

Mixed forms due to incorrect placement and enlargement of the relevant sensor elements SE are possible. This results in 2 ³ =8 possible placement combinations at the different 3 sensor element positions, all of which are hereby disclosed to a skilled person.

Figure 77

1. 1. auf der elektrisch leitenden linken Signalmassefläche 1310;
2. 2. in der elektrisch im Wesentlichen nicht-leitenden linken Isolationslücke 2340,
3. 3. auf dem linken Signalleiter 6810 des differentiellen Signalleiters 6830,
4. 4. in der elektrisch isolierenden Lücke 6840 zwischen dem linken Signalleiter 6810 und dem rechten Signalleiter 6820 des differentiellen Signalleiters 6830.
5. 5. auf dem rechten Signalleiter 6820 des differentiellen Signalleiters 6830,
6. 6. in der elektrisch im Wesentlichen nicht-leitenden rechten Isolationslücke 2350,
7. 7. auf der elektrisch leitenden rechten Signalmassefläche 1320;

The 77 equals to 71 with the difference that the waveline is a differential tri-plate line 6830 instead of a tri-plate line 2380. Since the differential triplate line 2380 enables seven possible positionings of sensor elements SE, namely:

1. 1. on the electrically conductive left signal ground surface 1310;
2. 2. in the essentially electrically non-conductive left insulation gap 2340,
3. 3. on the left signal conductor 6810 of the differential signal conductor 6830,
4. 4. in the electrically insulating gap 6840 between the left signal conductor 6810 and the right signal conductor 6820 of the differential signal conductor 6830.
5. 5. on the right signal conductor 6820 of the differential signal conductor 6830,
6. 6. in the essentially electrically non-conductive right insulation gap 2350,
7. 7. on the electrically conductive right signal ground surface 1320;

Here the device includes the 77 only five of the seven possible sensor channels. The document presented here ignores the placements on the electrically conductive right signal ground surface 1320 and on the electrically conductive left signal ground surface 1310, since the additional effort generally does not justify the information gain. A competent person can think of these two missing sensor elements SE and the associated sensor element channels, as their integration into the system 77 in an analogous manner to the integration of the other sensor elements SE (1410, 1420, 1430, 6810, 6820) and their associated sensor element channels, which is already done 77 shows. All sensor elements SE (1410, 1420, 1430, 6810, 6820) are flooded with the essentially same, additional magnetic flux density B _ad of the magnetic field generating means Lc. In the example of the 77 The sensor elements are preferably positioned at different positions on the differential tri-plate line 6980. As before, sensor elements SE and the associated sensor channels can be omitted.

The function of the sensor element channels is described in the description 71 described.

The vector filter output signal S4 includes the vector filter output signals (S4_1, S4_2, S4_3, S4_4, S4_5) of the multiple correlators (LIV_1, LIV_2, LIV_3, LIV_4, LIV_5).

The control device CTR and/or the pattern recognition device MEV preferably output the vector filter output signal S4. Typically, the control device CTR and/or the pattern recognition device MEV emulate some device parts of the sensor element channels.

It is often expedient if the control device CTR also emulates the pattern recognition device MEV in whole or in part, for example by means of a computer-implemented method.

This results in 2 ⁷ = 128 possible placement combinations at the different 3 sensor element positions, all of which are hereby disclosed to a skilled person.

Figure 78

1. 1. auf der elektrisch leitenden linken Signalmassefläche 1310,
2. 2. in der elektrisch im Wesentlichen nicht-leitenden linken Isolationslücke 2340,
3. 3. auf dem linken Signalleiter 6810 des differentiellen Signalleiters 6830,
4. 4. in der elektrisch isolierenden Lücke 6840 zwischen dem linken Signalleiter 6810 und dem rechten Signalleiter 6820 des differentiellen Signalleiters 6830.
5. 5. auf dem rechten Signalleiter 6820 des differentiellen Signalleiters 6830,
6. 6. in der im Wesentlichen elektrisch nicht-leitenden rechten Isolationslücke 2350,
7. 7. auf der elektrisch leitenden rechten Signalmassefläche 1320.

wieder umfasst die Vorrichtung der 78 nun fünf Sensorkanäle. Die Platzierungen auf der elektrisch leitenden rechten Signalmassefläche 1320 und auf der elektrisch leitenden linken Signalmassefläche 1310 vernachlässigt das hier vorgelegte Dokument, da der zusätzliche Aufwand in der Regel den Informationsgewinn nicht rechtfertigt. Eine fachkundige Person kann diese zwei fehlenden Sensorelemente SE und die zugehörigen Sensorelementkanäle sich dazu denken, da deren Einbindung in das System der 78 in analoger Weise wie die Einbindung der anderen Sensorelemente SE(1410, 1420, 1430, 6810, 6820) und deren zugehöriger Sensorelementkanäle erfolgt, die bereits 78 zeigt. Alle Sensorelemente SE(1410, 1420, 1430, 6810, 6820) werden mit der im Wesentlichen gleichen, zusätzlichen magnetischen Flussdichte B_ad des Magnetfelderzeugungsmittels Lc durchflutet. In dem Beispiel der 77 sind die Sensorelemente vorzugsweise an verschiedenen Positionen auf der differenziellen Tri-Plate-Leitung 6980 positioniert. Wie zuvor können Sensorelemente SE und die zugehörigen Sensorkanäle weggelassen werden. Die Funktion der Sensorelementkanäle ist die in der Beschreibung der 71 beschrieben.The 78 equals to 71 with the difference that the waveline is a differential tri-plate line 6830 instead of a tri-plate line 2380 and that the device is the 78 A microwave signal source µWG and a radio wave signal source RFG are used for control. As before, the differential triplate cable 6980 enables seven possible positionings of sensor elements SE, namely:

1. 1. on the electrically conductive left signal ground surface 1310,
2. 2. in the essentially electrically non-conductive left insulation gap 2340,
3. 3. on the left signal conductor 6810 of the differential signal conductor 6830,
4. 4. in the electrically insulating gap 6840 between the left signal conductor 6810 and the right signal conductor 6820 of the differential signal conductor 6830.
5. 5. on the right signal conductor 6820 of the differential signal conductor 6830,
6. 6. in the essentially electrically non-conductive right insulation gap 2350,
7. 7. on the electrically conductive right signal ground surface 1320.

again includes the device 78 now five sensor channels. The document presented here ignores the placements on the electrically conductive right signal ground surface 1320 and on the electrically conductive left signal ground surface 1310, since the additional effort generally does not justify the information gain. A competent person can think of these two missing sensor elements SE and the associated sensor element channels, as their integration into the system 78 in an analogous manner to the integration of the other sensor elements SE (1410, 1420, 1430, 6810, 6820) and their associated sensor element channels, which is already done 78 shows. All sensor elements SE (1410, 1420, 1430, 6810, 6820) are flooded with the essentially same, additional magnetic flux density B _ad of the magnetic field generating means Lc. In the example of the 77 The sensor elements are preferably positioned at different positions on the differential tri-plate line 6980. As before, sensor elements SE and the associated sensor channels can be omitted. The function of the sensor element channels is as described in the 71 described.

This results in 2 ⁷ =128 possible placement combinations at the different 3 sensor element positions, all of which are hereby disclosed to a skilled person.

The vector filter output signal S4 includes the vector filter output signals (S4_1, S4_2, S4_3, S4_4, S4_5) of the multiple correlators (LIV_1, LIV_2, LIV_3, LIV_4, LIV_5).

The control device CTR and/or the pattern recognition device MEV preferably output the vector filter output signal S4. Typically, the control device CTR and/or the pattern recognition device MEV emulate some device parts of the sensor element channels.

It is often expedient if the control device CTR also emulates the pattern recognition device MEV in whole or in part, for example by means of a computer-implemented method.

The special thing is that in the example shown here, the microwave signal source µWG does not feed the microwave signal µW it generates into both signal lines 6810 and 6820 of the differential signal line 6830 of the microstrip line 6830 of the exemplary differential tri-plate line 6980, but only into one of the two Signal lines 6810 and 6820 of the differential signal line 6830 of the microstrip line 6830 of the exemplary differential tri-plate line 6980. For explanation purposes, the microwave signal source µWG should preferably transmit the microwave signal µW generated by it into the left signal line 6810 of the differential signal line 6830 of the microstrip line 6830 of the exemplary differential tri -Plate line 6980 in the example 78 feed in as an example.

The microwave source µWG generates the microwave signal µW. The control device CTR preferably controls the generation of the microwave signal µW by the microwave source µWG by means of data messages via the data bus DB to the microwave source µWG. The control device CTR preferably checks the status of the microwave signal source µWG by means of data queries via the data bus DB. A second signal generator G2 typically generates a microwave modulation signal S5m. The control device CTR preferably controls the generation of the microwave modulation signal S5m by the second signal generator G2 by means of data messages via the data bus DB to the two signal generator G2. Typically, the control device CTR checks the status of the second signal generator G2 by means of data queries via the data bus DB. The microwave modulation signal S5m preferably modulates the amplitude of the radio wave signal µW of the microwave source µW. Typically, the radio wave modulation signal S5m is a digital signal having a first logic level and a second logic level different from the first logic level. For example, the second signal generator G2 controls the amplitude of the microwave signal µW that the microwave signal source µWG generates by means of the microwave modulation signal S5m.

For example, the device can be constructed in such a way that the microwave signal source µWG generates a microwave signal µW with a predetermined minimum amplitude when the microwave modulation signal S5m assumes the first logical value.

For example, the device can be constructed in such a way that the microwave signal source µWG generates a microwave signal RµW with a predetermined maximum amplitude when the microwave modulation signal S5m assumes the second logical value.

• Beispielsweise kann die Vorrichtung so konstruiert sein, dass die Mikrowellensignalquelle µWG das Mikrowellensignal µW abschaltet, wenn das Mikrowellenmodulationssignal S5m den ersten logischen Wert annimmt.

The microwave signal source µWG can also be controlled using the microwave modulation signal S5m:

• For example, the device can be constructed in such a way that the microwave signal source µWG switches off the microwave signal µW when the microwave modulation signal S5m assumes the first logical value.

For example, the device can be constructed in such a way that the microwave signal source µWG generates a microwave signal µW with the predetermined maximum amplitude when the microwave modulation signal S5m assumes the second logical value.

The radio wave source RFG generates the radio wave signal RW. The control device CTR preferably controls the generation of the radio wave signal RW by the radio wave source RFG by means of data messages via the data bus DB to the radio wave source RFG. The control device CTR preferably checks the status of the radio wave signal source RFG by means of data queries via the data bus DB. A third signal generator G3 typically generates a radio wave modulation signal S5r. The control device CTR preferably controls the generation of the radio wave modulation signal S5r by the third signal generator G3 by means of data messages via the data bus DB to the third signal generator G3. Typically, the control device CTR checks the status of the third signal generator G3 by means of data queries via the data bus DB. The radio wave modulation signal S5r preferably modulates the amplitude of the radio wave signal RW of the radio wave source RW. Typically, the radio wave modulation signal S5r is a digital signal having a first logic level and a second logic level different from the first logic level. For example, the third signal generator G3 controls the amplitude of the radio wave signal RW that the radio wave signal source RFG generates by means of the radio wave modulation signal S5r.

For example, the device can be constructed such that the radio wave signal source RFG generates a radio wave signal RW with a predetermined minimum amplitude when the radio wave modulation signal S5r assumes the first logical value.

For example, the device can be constructed such that the radio wave signal source RFG generates a radio wave signal RW with a predetermined maximum amplitude when the radio wave modulation signal S5r assumes the second logical value.

• Beispielsweise kann die Vorrichtung so konstruiert sein, dass die Radiowellensignalquelle RFG das Radiowellensignal RW abschaltet, wenn das Radiowellenmodulationssignal S5r den ersten logischen Wert annimmt.

The radio wave signal source RFG can also be controlled using the radio wave modulation signal S5r:

• For example, the device can be constructed so that the radio wave signal source RFG switches off the radio wave signal RW when the radio wave modulation signal S5r assumes the first logical value.

For example, the device can be constructed such that the radio wave signal source RFG generates a radio wave signal RW with the predetermined maximum amplitude when the radio wave modulation signal S5r assumes the second logical value.

Preferably, the radio wave modulation signal RW is modulated with a radio wave modulation frequency f _RWm . Preferably, the radio wave modulation frequency f _RWm is different from the other modulation frequencies of the device, as explained previously. The radio wave modulation frequency f _RWm preferably fits into the 2 ⁿ scheme of the modulation frequencies of the device, which ensures that none of the mixed frequencies of the modulation frequencies are the same or similar.

The exemplary device of 78 To simplify the illustration, uses the microwave modulation signal S5m as the radio wave modulation signal S5r and the second signal generator G2 as the third signal generator G3.

The special thing is that in the example shown here, the radio wave signal source RFG does not feed the radio wave signal RW it generates into both signal lines 6810 and 6820 of the differential signal line 6830 of the microstrip line 6830 of the exemplary differential tri-plate line 6980, but only into one of the two signal lines To Explanation: The radio wave signal source RFG should now prefer the radio wave signal RW it generates into the right signal line 6820 the differential signal line 6830 the microstrip line 6830 the exemplary differential tri-plate line 6980 in the example of 78 feed in as an example.

This has the advantage that a mixer MIX is no longer necessary for mixing the radio wave signal RW with the microwave signal µW to form a radio wave-microwave mixed signal RWµW.

The use of radio waves has the advantage that resonances caused by the interaction of the paramagnetic centers with nuclear nuclei of isotopes that have a magnetic moment and are located in the material of the diamond nano-crystals ND or the crystals used in the sensor element SE with the same function can be stimulated and, if necessary, observed.

The basic idea of the 78 So the two signal lines 6810 and 6820 of the differential signal line 6830 of the differential microstrip line 6880 of the differential tri-plate line 6980 can be used for different functions. A signal line of the differential signal line 6830 of the differential microstrip line 6880 of the differential tri-plate line 6980 for the excitation of the resonances between the nuclear nucleus of isotopes with magnetic moments in the material of the diamond nanocrystals ND or in the material of the functionally equivalent crystals, which are located in the sensor elements SE, on the one hand, and the paramagnetic centers, for example NV centers, in these diamond nanocrystals ND or these functionally equivalent crystals, on the other hand.

Figure 79

The 79 equals to 77 , whereby, firstly, five middle sensor elements 1420 are arranged along the differential tri-plate line, each of which is assigned a sensor element channel. Secondly, the device includes the 79 now several magnetic field generating means (L _c _1, L _c _2, L _c _3, L _c _4, L _c _5). These magnetic field generating means each generate a respective additional magnetic flux density (B _ad _1, B _ad _2, B _ad _3, B _ad _4, B _ad _5), which is preferably each corresponding to the respective magnetic field generating means (L _c _1, L _c _2, L _c _3 , L _c _4, L _c _5) assigned sensor element (1420_1, 1420_2, 1420_3, 1420_4, 1420_5) is assigned.

These additional magnetic flux densities (B _ad _1, B _ad _2, B _ad _3, B _ad _4, B _ad _5) define in the 51b a horizontal line on which the operating point of the assigned sensor element (1420_1, 1420_2, 1420_3, 1420_4, 1420_5) must lie. In the example of 79 The coils of the magnetic rock generating means (L _c _1, L _c _2, L _c _3, L _c _4, L _c _5) have different numbers of turns and are connected in series. They therefore define in the 51b For example, five of these horizontal lines on which the respective operating points of the five example sensor elements (1420_1, 1420_2, 1420_3, 1420_4, 1420_5) must lie, with each of these lines being assigned exactly one sensor element (1420_1, 1420_2, 1420_3, 1420_4, 1420_5).

1. 1. die wahrscheinliche Lage der unteren Resonanzkante 522,
2. 2. die wahrscheinliche Lage der unteren mittleren Resonanzkante 523,
3. 3. die wahrscheinliche Lage der oberen mittleren Resonanzkante 524,
4. 4. die wahrscheinliche Lage der oberen Resonanzkante 525,
5. 5. die wahrscheinliche Lage des mittleren Resonanzminimums 529,
6. 6. den wahrscheinlichen Wert der wirksamen Offsetflussdichte B_off,
7. 7. den wahrscheinlichen Wert der Nullpunktsflussdichte B₀,
8. 8. den wahrscheinlichen Wert der Nullpunktsmikrowellenfrequenz ω_µW0,

The specifications for a microwave frequency (ω _{µW_I} , ω _{µW_I} , ω _{µW_I} , ω _{µW_IV} ) of the respective microwave signals (µW_I, µW_II, µW_III, µW_IV). 81 and 83 each define a vertical line in the 51b . The five intersection points of the horizontal lines and the vertical line defined in this way result in the operating points for the assigned sensor elements (1420_1, 1420_2, 1420_3, 1420_4, 1420_5). It is intuitively immediately obvious that in this way the control device CTR can roughly determine one or more of the following values during the first measurement.

1. 1. the probable position of the lower resonance edge 522,
2. 2. the probable position of the lower middle resonance edge 523,
3. 3. the probable position of the upper middle resonance edge 524,
4. 4. the probable position of the upper resonance edge 525,
5. 5. the probable location of the mean resonance minimum 529,
6. 6. the probable value of the effective offset flux density B _off ,
7. 7. the probable value of the zero-point flux density B ₀ ,
8. 8. the probable value of the zero point microwave frequency ω _µW0 ,

• 9. den wahrscheinlichen Wert 564 der magnetischen Flussdichte B, der der oberen Referenzlinie 561 zugeordnet ist, an einem oder mehreren Arbeitspunkten,
• 10. den wahrscheinlichen Wert 565 der magnetischen Flussdichte B, der der unteren Referenzlinie 562 zugeordnet ist, an einem oder mehreren Arbeitspunkten,
• 11. die wahrscheinliche Differenz 566 des Werts der magnetischen Flussdichte B, der der mittleren Referenzlinie 563 zugeordnet ist, minus dem Wert 565 der magnetischen Flussdichte B, der der unteren Referenzlinie 562 zugeordnet ist,
• 12. die wahrscheinliche Steigung 567 der Kurve an einem oder mehreren Arbeitspunkten;
• 13. die Polynomkoeffizienten der Polynomapproximation 627 der Kurve in einigen Arbeitspunkten,
• 14. den wahrscheinlichen Wert einer unteren wirksamen magnetischen Flussdichte B₂₂,
• 15. den wahrscheinlichen Wert einer unteren mittleren wirksamen magnetischen Flussdichte B₂₃,
• 16. den wahrscheinlichen Wert einer oberen mittleren wirksamen magnetischen Flussdichte B₂₄,
• 17. den wahrscheinlichen Wert einer oberen wirksamen magnetischen Flussdichte B₂₅,
• 18. den wahrscheinlichen Wert einer wirksamen magnetische Resonanzminimum-Flussdichte B₂₉,
• 19. den wahrscheinlichen Wert einer Nullpunktsmikrowellenfrequenz ω_µW0;
• 20. den wahrscheinlichen Wert einer unteren Mikrowellenfrequenz ω_µW22;
• 21. den wahrscheinlichen Wert einer unteren mittleren Mikrowellenfrequenz ω_µW23;
• 22. den wahrscheinlichen Wert einer oberen mittleren Mikrowellenfrequenz ωµ_W24;
• 23. den wahrscheinlichen Wert einer oberen Mikrowellenfrequenz ω_µW25;
• 24. den wahrscheinlichen Wert einer Resonanzminimum-Mikrowellenfrequenz ω_µW29;
• 25. den wahrscheinlichen Wert einer unbekannten Mikrowellenfrequenz ω_µWnk;
• 26. den wahrscheinlichen Wert einer Mikrowellenmodulationsfrequenz f_µW;

After further measurements, the control device CTR can also conclude one or more of the following values:

• 9. the probable value 564 of the magnetic flux density B associated with the upper reference line 561 at one or more operating points,
• 10. the probable value 565 of the magnetic flux density B associated with the lower reference line 562 at one or more operating points,
• 11. the probable difference 566 of the value of the magnetic flux density B associated with the middle reference line 563 minus the value 565 of the magnetic flux density B associated with the lower reference line 562,
• 12. the probable slope 567 of the curve at one or more operating points;
• 13. the polynomial coefficients of the polynomial approximation 627 of the curve at some operating points,
• 14. the probable value of a lower effective magnetic flux density B ₂₂ ,
• 15. the probable value of a lower average effective magnetic flux density B ₂₃ ,
• 16. the probable value of an upper average effective magnetic flux density B ₂₄ ,
• 17. the probable value of an upper effective magnetic flux density B ₂₅ ,
• 18. the probable value of an effective magnetic resonance minimum flux density B ₂₉ ,
• 19. the probable value of a zero point microwave frequency ω _µW0 ;
• 20. the probable value of a lower microwave frequency ω _µW22 ;
• 21. the probable value of a lower mean microwave frequency ω _µW23 ;
• 22. the probable value of an upper mean microwave frequency ωµ _W24 ;
• 23. the probable value of an upper microwave frequency ω _µW25 ;
• 24. the probable value of a resonance minimum microwave frequency ω _µW29 ;
• 25. the probable value of an unknown microwave frequency ω _µWnk ;
• 26. the probable value of a microwave modulation frequency f _µW ;

Figure 80

80 equals to 79 with the difference that a gradient permanent magnet GPM as a magnetic rock generating means L _c generates the different additional magnetic flux densities (B _ad _1, B _ad _2, B _ad _3, B _ad _4, B _ad _5). Here too, the generation of the additional magnetic flux densities can look like this: $$\left|{\text{b}}_{\text{ad}}\text{\_1}\right|>\left|{\text{b}}_{\text{ad}}\text{\_2}\right|>\left|{\text{b}}_{\text{ad}}\text{\_3}\right|>\left|{\text{b}}_{\text{ad}}\text{\_4}\right|>\left|{\text{b}}_{\text{ad}}\text{\_5}\right|.$$

The disadvantage is that an adjustment of the total magnetic flux density B _Σ is then no longer possible using only the gradient permanent magnet GPM alone. It therefore makes sense in this case to provide an additional magnetic rock generating means L _c in addition to the gradient-affected permanent magnet GPM.

It becomes obvious here that a resolution with only 5 sensor element channels is insufficient.

Figure 81

81 shows, as a consistent further development of the use of several more or less punctiform sensor elements SE, the use of linear and/or areal sensor element layers 5 as a fine-grained, extended sensor element SE. To make this possible, the sensor element layer 5 is preferably made thinner than the smallest structure size of the waveguide to be measured (1380, 2380, 6830, 6980). The structure size here is the widths of the signal lines (1330, 6830, 6810, 6820) of the relevant waveguides (1380, 2380, 6830, 6980) and their distances from one another and from ground surfaces (2310, 2320) of the relevant waveguides (2380, 1880, 6980). ). That in the 81 The principle shown can be applied to different waveguides (1380, 2380, 6830, 6980). Preferably the waveguides (1380, 2380, 6830, 6980) are planar waveguides. As an example, the document presented here deals with microstrip lines 1380, slot lines 1880, tri-plate lines 2380, differential microstrips waveline lines 6830 and differential tri-plate lines 6980. However, the technical teaching of the document presented here is expressly not limited to these types of waveline lines. The linear and/or areal sensor element layer 5 preferably has all the features of a sensor element SE, which have already been described several times in this document. The idea is therefore to measure the total magnetic flux density B _Σ and/or the unknown microwave frequency ω _nk of an external microwave signal S _{ω nk} instead of using discrete sensor elements SE with a continuous and linear and/or areal, typically essentially homogeneously manufactured sensor element layer 5 as the sensor element SE to be carried out, which act on the sensor element layer 5.

A linear sensor element layer 5 can be used as a sensor element SE by connecting the sensor elements, for example 72, 54 to 57 be received. In principle, firstly, a linear sensor element SE (5) can be arranged transversely to the direction of a waveguide (1380, 1880, 2380, 6830, 6980). In principle, secondly, a linear sensor element SE (5) can be arranged parallel to the direction of a waveguide (1380, 1880, 2380, 6830, 6980) and, if it is narrower than the distance between the signal lines (1330, 6810, 6820) and smaller than the width of the possibly existing non-conducting left isolation gap 2340 and the possibly existing non-conducting right isolation gap 2350, assume several positions relative to these structures of the respective waveguide (1380, 1880, 2380, 6830, 6980). In this case, the linear sensor element SE (5) arranged parallel to the respective waveguide (1380, 1880, 2380, 6830, 6980) can assume different positions relative to the waveguide (1380, 1880, 2380, 6830, 6980). However, if the linear sensor element SE(5) is wider in these cases, this is equivalent to the presence of different ideal linear sensor elements SE(5) directly adjacent and parallel to one another. A camera can observe the intensity I _is the fluorescent radiation FL of these widened linear sensor elements SE (5) and a subsequent processing device 30 or a control device CTR, CTR2 can use these signals of the intensity of the fluorescent radiation FL of these linear sensor elements SE (5) in the widened linear Separate the sensor element SE(5) using computer-implemented image processing methods and determine the associated measured values. In the case of connecting the sensor elements, for example 72, 54 to 57 The linear sensor element layer 5 would be arranged, for example, transversely to the direction of the waveguide. The document presented here therefore refers to such a linear sensor element layer 5 arranged transversely to the waveguide (1380, 2380, 1880, 6830, 6980) as a transversely arranged linear sensor element layer 5.

The magnetic field generating means Lc should comprise several magnetic field generating means (L _c _1, L _c _2, L _c _3, L _c _4, L _c _5) as sub-devices of the magnetic field generating means Lc, which are arranged along the waveguide (1380, 2380, 1880, 6830, 6980). are, a linear sensor element layer 5 can preferably also be formed along this waveguide (1380, 2380, 1880, 6830, 6980). The document presented here therefore refers to such a linear sensor element layer 5 arranged along the waveguide (1380, 2380, 1880, 6830, 6980) as a longitudinally arranged linear sensor element layer 5, which here typically comprises a plurality of sensor elements SE that merge into one another.

First, we assume that the longitudinally arranged linear sensor element layer 5 is so narrow that it can assume one of the possible positions below for the various exemplary waveguides already mentioned (1380, 2380, 1880, 6830, 6980). The analogous positions apply to alternative, especially planar, waveguides not listed here.

For this purpose, the document presented here discusses the waveguides already mentioned as examples in the document presented here (1380, 2380, 1880, 6830, 6980).

1. 1. auf der elektrisch im Wesentlichen nicht-leitenden linken Isolationsfläche 1340,
2. 2. auf dem linken Signalleiter 1330,
3. 3. auf der elektrisch im Wesentlichen nicht-leitenden rechten Isolationsfläche 1350.

The document presented here indicates that a total of three positionings of longitudinally arranged linear sensor element layers 5 relative to the lines and line surfaces of the microstrip line 1380 are possible:

1. 1. on the essentially electrically non-conductive left insulation surface 1340,
2. 2. on the left signal conductor 1330,
3. 3. on the essentially electrically non-conductive right insulation surface 1350.

1. 1. auf der elektrisch leitenden linken Signalmassefläche 1310,im Schlitz 1840 der Schlitzleitung 1880
2. 2. auf der elektrisch leitenden rechten Signalmassefläche 1320.

The document presented here indicates that a total of three positionings of longitudinally arranged linear sensor element layers 5 relative to the lines and line surfaces of the slot line 1880 are possible:

1. 1. on the electrically conductive left signal ground surface 1310, in slot 1840 of slot line 1880
2. 2. on the electrically conductive right signal ground surface 1320.

1. 1. auf der elektrisch leitenden linken Signalmassefläche 1310,
2. 2. in der elektrisch im Wesentlichen nicht-leitenden linken Isolationslücke 2340,
3. 3. auf dem Signalleiter 1330,
4. 4. in der elektrisch im Wesentlichen nicht-leitenden rechten Isolationslücke 2350
5. 5. auf der elektrisch leitenden rechten Signalmassefläche 1320.

The document presented here indicates that a total of five positionings of longitudinally arranged linear sensor element layers 5 relative to the lines and line surfaces of the triplate line 2380 are possible:

1. 1. on the electrically conductive left signal ground surface 1310,
2. 2. in the essentially electrically non-conductive left insulation gap 2340,
3. 3. on the signal conductor 1330,
4. 4. in the essentially electrically non-conductive right insulation gap 2350
5. 5. on the electrically conductive right signal ground surface 1320.

1. 1. auf der elektrisch im Wesentlichen nicht-leitenden linken Isolationsfläche 1340,
2. 2. auf dem linken Signalleiter 6810 des differentiellen Signalleiters 6830,
3. 3. in der elektrisch isolierenden Lücke 6840 zwischen dem linken Signalleiter 6810 und dem rechten Signalleiter 6820 des differentiellen Signalleiters 6830.
4. 4. auf dem rechten Signalleiter 6820 des differentiellen Signalleiters 6830,
5. 5. auf der elektrisch im Wesentlichen nicht-leitenden rechten Isolationsfläche 1350.

The document presented here indicates that a total of five positionings of longitudinally arranged linear sensor element layers 5 relative to the lines and line surfaces of the differential microstrip line 6880 are possible:

1. 1. on the essentially electrically non-conductive left insulation surface 1340,
2. 2. on the left signal conductor 6810 of the differential signal conductor 6830,
3. 3. in the electrically insulating gap 6840 between the left signal conductor 6810 and the right signal conductor 6820 of the differential signal conductor 6830.
4. 4. on the right signal conductor 6820 of the differential signal conductor 6830,
5. 5. on the essentially electrically non-conductive right insulation surface 1350.

1. 1. auf der elektrisch leitenden linken Signalmassefläche 1310,
2. 2. in der elektrisch im Wesentlichen nicht-leitenden linken Isolationslücke 2340,
3. 3. auf dem linken Signalleiter 6810 des differentiellen Signalleiters 6830,
4. 4. in der elektrisch isolierenden Lücke 6840 zwischen dem linken Signalleiter 6810 und dem rechten Signalleiter 6820 des differentiellen Signalleiters 6830.
5. 5. auf dem rechten Signalleiter 6820 des differentiellen Signalleiters 6830,
6. 6. in der elektrisch im Wesentlichen nicht-leitenden rechten Isolationslücke 2350,
7. 7. auf der elektrisch leitenden rechten Signalmassefläche 1320.

The document presented here indicates that a total of seven positionings of longitudinally arranged linear sensor element layers 5 relative to the lines and line surfaces of the differential triplate line 2380 are possible:

1. 1. on the electrically conductive left signal ground surface 1310,
2. 2. in the essentially electrically non-conductive left insulation gap 2340,
3. 3. on the left signal conductor 6810 of the differential signal conductor 6830,
4. 4. in the electrically insulating gap 6840 between the left signal conductor 6810 and the right signal conductor 6820 of the differential signal conductor 6830.
5. 5. on the right signal conductor 6820 of the differential signal conductor 6830,
6. 6. in the essentially electrically non-conductive right insulation gap 2350,
7. 7. on the electrically conductive right signal ground surface 1320.

Mixed forms due to incorrect placement and enlargements (widening) of the relevant longitudinally arranged linear sensor element layers 5 are possible and are expressly included in the stress. The waveguides (1380, 2380, 1880, 6830, 6980) can be formed straight or non-straight on the carrier substrate 1360. The width of the waveguides (1380, 2380, 1880, 6830, 6980) can vary along the sensor element layer 5, with the places of variation in the width of the waveguides (1380, 2380, 1880, 6830, 6980) preferably being shaped in such a way that no joints are caused by varying Wave resistances of the respective waveguides arise as a result of the variation in the width of the waveguides (1380, 2380, 1880, 6830, 6980). The widths of the signal lines (1330, 6810, 6820) and the distances between the signal lines (1380, 2380, 1880, 6830, 6980) preferably differ from one another and the widths of any non-conductive left insulation gaps 2340 that may be present and any non-conductive gaps that may be present. conductive right insulation gaps 2350 in a first region of a waveguide (1380, 2380, 1880, 6830, 6980), which has sensor elements SE and / or is completely or partially covered by a sensor element layer 5 or interacts with a sensor element layer 5 and / or a sensor element SE, from the widths of the signal lines (1330, 6810, 6820) and the distances between the signal lines (1380, 2380, 1880, 6830, 6980) and the widths of any non-conductive left insulation gaps 2340 and any non-conductive ones right isolation gaps 2350 in a second region of a waveguide (1380, 2380, 1880, 6830, 6980), which has no sensor elements SE and which is not completely or partially covered by a sensor element layer 5 and not with a sensor element layer 5 and / or a sensor element SE interacts, from. These deviations are preferably designed in such a way that the characteristic impedance of the waveguide in question (1380, 2380, 1880, 6830, 6980) in the first area is no more than 25% better than the characteristic impedance of the second area, no more than 10% better not more than 5%, better by not more than 2%, better by not more than 1%, better by not more than 0.5%.

The document presented here indicates that the use of other, in particular planar, waveguides in a functionally equivalent manner is also possible.

Waveguides can also have functional elements of stripline technology, such as capacitances, inductors, branches, kinks, curves, circulators, wave couplers, phase shifters, thick-film resistors, thin-film transistors, MEMS switches, etc.

If two linear sensor element layers 5 arranged directly next to one another are used, they can have two or more of the above-listed positionings relative to the respective waveguide at the same time.

The document presented here then refers to such a sensor element layer 5 as a longitudinally arranged areal sensor element layer 5. If several linear sensor element layers 5 arranged directly next to one another are used, which have all of the above-listed positionings relative to the respective waveguide at the same time, the document presented here refers to such a sensor element layer 5 then as a flat sensor element layer 5.

The amount of additional magnetic flux density B _ad , which flows through the flat sensor element layer 5, then preferably depends on the position along the respective waveguide.

The proposed device very particularly preferably uses a static magnetic field generating means 19 (Lc), for example in the form of a permanent magnet PM. The device preferably comprises a gradient-affected permanent magnet GPM as a static magnetic rock generating means 19 (Lc) which generates an additional magnetic flux density B _ad , which preferably depends on the coordinate x along the waveguide used (1380, 2380, 1880, 6830, 6980, 6830_1, 6830_II, 6830_III, 6830_IV) depends. Particularly preferred is this dependence of the additional magnetic flux density B _ad on the coordinate x along the relevant waveguide (1380, 2380, 1880, 6830, 6980, 6830_I, 6830_II, 6830_III, 6830_IV) in the area of the areal sensor element layer 5 linearly dependent on the coordinate x along the waveguide used (1380, 2380, 1880, 6830, 6980, 6830_I, 6830_II, 6830_III, 6830_IV): $$b_{ad}\left(x\right)\approx b_{a\mathrm{<figure-callout\; id="0"\; label="d"\; filenames="DE102023122657A1\_0080.png,DE102023122657A1\_0109.png"\; state="\{\{state\}\}">d</figure-callout>}0}+k\times x$$

Here, B _ad0 is an offset constant specific to the permanent magnet GPM(19) used, x is the coordinate along the relevant waveguide (1380, 2380, 1880, 6830, 6980, 6830_I, 6830_II, 6830_III, 6830_IV). k is a proportionality constant for the gradient-affected permanent magnet GPM (19) in the area of the flat sensor element layer 5. In the example 81 k is arbitrarily chosen to be negative. Of course, instead of this linear relationship, polynomials of a higher degree than 1 with more complex dependencies of the additional magnetic flux density B _ad on the coordinate x along the relevant waveguide (1380, 2380, 1880, 6830, 6980, 6830_I, 6830_II, 6830_III, 6830_IV) can also be used Area of the flat sensor element layer 5 can be used.

Due to the quasi-continuous distribution of the amount of the additional magnetic flux density B _ad from the coordinate x along the waveguide in question (1380, 2380, 1880, 6830, 6980, 6830_I, 6830_II, 6830_III, 6830_IV) corresponding to B _ad (x), the dimensionality of the sensor element increases SE basically into infinity. It is ultimately only limited by the granularity of the diamond nano-crystals ND in the sensor element SE, here the granularity of the crystals/diamond nano-crystals ND in the flat sensor element layer 5. So it is still a vector sensor element SE with extremely high dimensionality. The transition is similar to the transition from a Fourier series to the Fourier integral.

Accordingly, the evaluation devices and methods presented up to this point can generally no longer adequately solve this problem.

The document presented here therefore suggests using a magnetic field camera for the evaluation instead of discrete sensor element channels. In this regard, the document presented here refers to the following unpublished German patent applications DE 10 2023 100 856.0 , DE 10 2023 100 857.9 , DE 10 2023 111 858.7 and DE 10 2023 111859.5 .

An essential idea of the document presented here is to have such a magnetic field camera, as described in these documents, with a waveguide, in particular a planar waveguide and/or in particular with one of the waveguides discussed here (1380, 2380, 1880, 6830, 6980, 6830_1, 6830_II, 6830_III, 6830_IV) and one of the systems presented here and to interpret the distribution of the intensity of the fluorescence radiation FL in the area of the areal sensor element layer 5 within the resulting overall system as two-dimensional vector fluorescence radiation and by means of a camera, in particular a CMOS -Camera, to be recorded and evaluated by the control device CTR or a pattern recognition device MEV and / or an evaluation device 30 using computer-implemented image processing algorithms in order to determine measured values, in particular the position of the tip 30 of the V-formation (522, 525) and / or therefrom derived values, to close. The evaluation device 30 and/or the control device CTR preferably comprise a storage medium (RAM, NVM) that applies these computer-implemented image processing algorithms to the output data of the output signals 31 of the photodetectors PD of the light sensor array 1 in order to determine measured values and/or groups of measured values and on a screen 32 and/or to be made available for processing by a higher-level computer system (CTR2, 29) or to be transmitted to such a higher-level computer system (CTR2, 29).

1. 1. Informationen über die wahrscheinliche Lage der unteren Resonanzkante 522,
2. 2. Informationen über die wahrscheinliche Lage der unteren mittleren Resonanzkante 523,
3. 3. Informationen über die wahrscheinliche Lage der oberen mittleren Resonanzkante 524,
4. 4. Informationen über die wahrscheinliche Lage der oberen Resonanzkante 525,
5. 5. Informationen über die wahrscheinliche Lage des mittleren Resonanzminimums 529,
6. 6. Informationen über den wahrscheinlichen Wert der wirksamen Offsetflussdichte B_off,
7. 7. Informationen über den wahrscheinlichen Wert der Nullpunktsflussdichte B₀,
8. 8. Informationen über den wahrscheinlichen Wert der Nullpunktsmikrowellenfrequenz ω_µW0,

The control device CTR and/or the pattern recognition device MEV preferably determine one or more of the following measured values or groups of measured values using computer-implemented image processing and/or pattern recognition algorithms:

1. 1. Information about the probable location of the lower resonance edge 522,
2. 2. Information about the probable location of the lower middle resonance edge 523,
3. 3. Information about the probable location of the upper middle resonance edge 524,
4. 4. Information about the probable location of the upper resonance edge 525,
5. 5. Information about the probable location of the mean resonance minimum 529,
6. 6. Information about the probable value of the effective offset flux density B _off ,
7. 7. Information about the probable value of the zero point flux density B ₀ ,
8. 8. Information about the probable value of the zero point microwave frequency ω _µW0 ,

• 9. Informationen über den wahrscheinlichen Wert 564 der magnetischen Flussdichte B₆₁, der der oberen Referenzlinie 561 zugeordnet ist, an einem oder mehreren Arbeitspunkten,
• 10. Informationen über den wahrscheinlichen Wert 565 der magnetischen Flussdichte B₆₂, der der unteren Referenzlinie 562 zugeordnet ist, an einem oder mehreren Arbeitspunkten,
• 11. Informationen über die wahrscheinliche Differenz 566 des Werts der magnetischen Flussdichte B₆₃, der der mittleren Referenzlinie 563 zugeordnet ist, minus dem Wert 565 der magnetischen Flussdichte B₆₂, der der unteren Referenzlinie 562 zugeordnet ist,
• 12. Informationen über die wahrscheinliche Steigung 567 der Kurve an einem oder mehreren Arbeitspunkten;
• 13. Informationen über die Polynomkoeffizienten der Polynomapproximation 627 der Kurve in einigen Arbeitspunkten,
• 14. Informationen über den wahrscheinlichen Wert einer unteren wirksamen magnetischen Flussdichte B₂₂,
• 15. Informationen über den wahrscheinlichen Wert einer unteren mittleren wirksamen magnetischen Flussdichte B₂₃,
• 16. Informationen über den wahrscheinlichen Wert einer oberen mittleren wirksamen magnetischen Flussdichte B₂₄,
• 17. Informationen über den wahrscheinlichen Wert einer oberen wirksamen magnetischen Flussdichte B₂₅,
• 18. Informationen über den wahrscheinlichen Wert einer wirksamen magnetische Resonanzminimum-Flussdichte B₂₉,
• 19. Informationen über den wahrscheinlichen Wert einer Nullpunktsmikrowellenfrequenz ω_µW0;
• 20. den wahrscheinlichen Wert einer unteren Mikrowellenfrequenz ωµ_W22;
• 21. Informationen über den wahrscheinlichen Wert einer unteren mittleren Mikrowellenfrequenz ω_µW23;
• 22. Informationen über den wahrscheinlichen Wert einer oberen mittleren Mikrowellenfrequenz ω_µW24;
• 23. Informationen über den wahrscheinlichen Wert einer oberen Mikrowellenfrequenz ω_µW25;
• 24. Informationen über den wahrscheinlichen Wert einer Resonanzminimum-Mikrowellenfrequenz ω_µW29;
• 25. Informationen über den wahrscheinlichen Wert einer unbekannten Mikrowellenfrequenz ω_µWnk;
• 26. Informationen über den wahrscheinlichen Wert einer Mikrowellenmodulationsfrequenz f_uW;

After further measurements, the control device CTR and/or the pattern recognition device MEV or an evaluation device 530 can also conclude one or more of the following values:

• 9. Information about the probable value 564 of the magnetic flux density B ₆₁ associated with the upper reference line 561 at one or more operating points,
• 10. Information about the probable value 565 of the magnetic flux density B ₆₂ associated with the lower reference line 562 at one or more operating points,
• 11. Information about the probable difference 566 of the value of the magnetic flux density B ₆₃ associated with the middle reference line 563 minus the value 565 of the magnetic flux density B ₆₂ associated with the lower reference line 562,
• 12. Information about the probable slope 567 of the curve at one or more operating points;
• 13. Information about the polynomial coefficients of the polynomial approximation 627 of the curve at some operating points,
• 14. Information about the probable value of a lower effective magnetic flux density B ₂₂ ,
• 15. Information about the probable value of a lower mean effective magnetic flux density B ₂₃ ,
• 16. Information about the probable value of an upper average effective magnetic flux density B ₂₄ ,
• 17. Information about the probable value of an upper effective magnetic flux density B ₂₅ ,
• 18. Information about the probable value of an effective magnetic resonance minimum flux density B ₂₉ ,
• 19. Information about the probable value of a zero point microwave frequency ω _µW0 ;
• 20. the probable value of a lower microwave frequency ωµ _W22 ;
• 21. Information about the probable value of a lower mean microwave frequency ω _µW23 ;
• 22. Information about the probable value of an upper mean microwave frequency ω _µW24 ;
• 23. Information about the probable value of an upper microwave frequency ω _µW25 ;
• 24. Information about the probable value of a resonance minimum microwave frequency ω _µW29 ;
• 25. Information about the probable value of an unknown microwave frequency ω _µWnk ;
• 26. Information about the probable value of a microwave modulation frequency f _uW ;

• Besonders bevorzugt ist, dass die Relation B_ad(x) eine bijektive Funktion ist. Für die Ermittlung einer zusätzlichen magnetischen Flussdichte B_ad können dann die Auswertevorrichtung 30 und/oder die Mustererkennungsvorrichtung MEV in einem ersten Schritt eine Intensitätskurve I_fl(x) der Intensität der Fluoreszenzstrahlung FL längs eines Wellenleiters (1380, 2380, 1880, 6830, 6980, 6830_I, 6830_II, 6830_III, 6830_IV), beispielsweise des ersten Wellenleiters (6830_1), mit den Fotodetektoren PD des Lichtsensorarrays 1 für eine erste Mikrowellenfrequenz ω_{µW_1} aufnehmen. Da die Relation B_ad(x) des Gradienten behafteten Permanentmagneten GPM(19) bekannt und umkehrbar und eine Funktion von x ist, können die Auswertevorrichtung 30 und/oder die Mustererkennungsvorrichtung MEV die Umkehrfunktion x(B_ad) bestimmen und in eine für eine bei ω_nk=0Hz bestimmte Kalibrationskurve I_fl(x) einsetzen und erhalten so eine Kurve I_fl(B_ad) für diese eine Mikrowellenfrequenz ω_{µW_1}. Vorzugsweise wurde zuvor das gesamte Intensitätsfeld I_fl(ω_µW, B_ad) in einem Kalibrationsvorgang bestimmt, sodass Auswertevorrichtung 30 und/oder die Mustererkennungsvorrichtung MEV vorzugsweise über die entsprechenden Daten in einem Speicher (RAM, NVM) der Vorrichtung verfügen. Wird nun beispielsweise einem bekannten ersten Mikrowellensignal µW_G_I mit der ersten Mikrowellenfrequenz ω_{µW_I} der ersten internen Mikrowellenquelle µW_G_I innerhalb der ersten Mikrowellenquelle µWG_I (Siehe 83) in einem ersten Mixer µW_MX_I der ersten Mikrowellenquelle µWG_I ein Signal S_ωnk mit einer unbekannten Mikrowellenfrequenz ω_nk zugemischt, so entsteht ein erstes Mikrowellenmischsignal µW_MX_I. Ein erster Mikrowellenfilter µW_F_I (Siehe 83) eliminiert bevorzugt einen der beiden bei ω_{µW_I}-ω_nk und ω_{µW_I}+ω_nk entstehenden Transienten im ersten Mikrowellenmischsignal µW_MX_I. Bevorzugt ist die Grenzfrequenz des ersten Mikrowellenfilters µW_F_I (Siehe 83) bei einem Tiefpass als ersten Mikrowellenfilter µW_F_I kleiner als die Nullpunktsmikrowellenfrequenz ω_µW0. Bevorzugt ist die Grenzfrequenz des ersten Mikrowellenfilters µW_F_I (Siehe 83) bei einem Hochpass als erster Mikrowellenfilter µW_F_I größer als die Nullpunktsmikrowellenfrequenz ω_µW0. Hierdurch wird das Diagramm der 2 betreffend die Position der untere Resonanzkante 522 in eine umkehrbare Funktion ω_µW(B_ad) gewandelt. (Siehe 83).

As an example, the determination of an unknown microwave frequency ω _nk is explained here:

• It is particularly preferred that the relation B _ad (x) is a bijective function. To determine an additional magnetic flux density B _ad , the evaluation device 30 and/or the pattern recognition device MEV can then, in a first step, generate an intensity curve I _fl (x) of the intensity of the fluorescent radiation FL along a waveguide (1380, 2380, 1880, 6830, 6980, 6830_I, 6830_II, 6830_III, 6830_IV), for example of the first waveguide (6830_1), with the photodetectors PD of the light sensor array 1 for a first microwave frequency ω _{µW_1} . Since the relation B _ad (x) of the gradient-affected permanent magnet GPM (19) is known and reversible and a function of x, the evaluation device 30 and/or the pattern recognition device MEV can determine the reversal function x (B _ad ) and convert it into one for one ω _nk =0Hz certain calibration curve I _fl (x) and get a curve I _fl (B _ad ) for this one microwave frequency ω _{µW_1} . Preferably, the entire intensity field I _fl (ω _µW , B _ad ) was previously determined in a calibration process, so that evaluation device 30 and/or the pattern recognition device MEV preferably have the corresponding data in a memory (RAM, NVM) of the device. For example, if a known first microwave signal µW_G_I with the first microwave frequency ω _{µW_I} of the first internal microwave source µW_G_I within the first microwave source µWG_I (see 83 ) a signal S _ωnk with an unknown microwave frequency ω _nk is mixed into the first microwave source µWG_I in a first mixer µW_MX_I, a first microwave mixed signal µW_MX_I is created. A first microwave filter µW_F_I (See 83 ) preferably eliminates one of the two transients arising at ω _{µW_I} -ω _nk and ω _{µW_I} +ω _nk in the first microwave mixed signal µW_MX_I. The cutoff frequency of the first microwave filter is preferably µW_F_I (see 83 ) with a low pass as the first microwave filter µW_F_I smaller than the zero point microwave frequency ω _µW0 . The cutoff frequency of the first microwave filter is preferably µW_F_I (see 83 ) with a high pass as the first microwave filter µW_F_I greater than the zero point microwave frequency ω _µW0 . This creates the diagram of the 2 concerning the position of the lower resonance edge 522 is converted into a reversible function ω _µW (B _ad ). (Please refer 83 ).

As a result, in a third step, the evaluation device 30 and/or the pattern recognition device MEV can determine the position of the lower resonance edge 522 in the detected curve I _fl (B _ad ) as the value of the additional magnetic flux density B _ad,22 for this lower resonance edge 522. This can be done, for example, by forming a cross-correlation integral between the recorded curve I _fl (B _ad ) and a reference curve I _{ff_ref} (B _ad ) for S _ωnk constant. $$K\left(b_{ad}\right)={\displaystyle {\int }_{b_{ad\_min}}^{b_{ad\_max}}{I}_{fl}\left(b_{ad}\right)°I_{fl\_ref}\left(b_{ad\_max}-b_{ad}\right)d{b}_{ad}}$$

If only a lower reference edge is sought, this is typically at the additional magnetic flux density B _ad,22 with the maximum of the correlation K(B _ad ).

In a fourth step, the evaluation device 30 and/or the pattern recognition device MEV can then determine a microwave frequency ω _μW22 =ω _μW (B _ad,22 ) for the position of the lower resonance edge 522.

Depending on the type of the first microwave filter µW_F_I (high pass or low pass), the evaluation device 30 and/or the pattern recognition device MEV can then use - ω _nk = ω _µW22 - ω _{µW_I} or ω _nk =ω _{µW_I} - ω _µW22 to obtain the unknown microwave frequency ω _nk determine.

In 81 An XY diagram is shown on the left of the carrier substrate 1360 to illustrate the exemplary, possible relationship B _ad (x). Of course, k=0 can also apply if no gradient of the magnetic flux density is desired in the respective application.

The linear waveguide (1380, 2380, 1880, 6830, 6980) can be designed in the area of the flat sensor element layer 5 not only straight, but also curved and/or ring-shaped and/or ring segment-shaped and/or kinked. For example, in the area of the flat sensor element layer 5, the linear waveguide (1380, 2380, 1880, 6830, 6980) has two sections of the linear waveguide (1380, 2380, 1880, 6830, 6980) connected in series, which are preferably straight in these sections and which are arranged, for example, at an angle of 90° to one another (see 91 ), the control device CTR and/or the pattern recognition device MEV can use a computer-implemented image processing method to infer the polarization direction and frequency of externally incident microwave radiation or other electromagnetic radiation, the mixing frequency of which corresponds to the microwave frequency of the microwave signal µW in the measuring range of the paramagnetic centers or the NV -Centers of the diamond nano-crystals ND or the corresponding functionally equivalent crystals.

• Die Lichtquelle LED emittiert als beispielhafte Pumpstrahlungsquelle Pumpstrahlung LB mit der Pumpstrahlungswellenlänge λ_pmp und möglicherweise unerwünschte elektromagnetische Strahlung 27 anderer Wellenlängenbereiche. Optional kann wieder ein erster Signalgenerator G1 ein LED-Modulationssignal S5w mit einer LED-Modulationsfrequenz f_LED erzeugen. Vorzugsweise steuert die Steuervorrichtung CTR den ersten Signalgenerator G1 über den Datenbus DB. Ein Lichtquellentreiber LDRV versorgt bevorzugt zumindest Zeitweise in Abhängigkeit von dem optionalen LED-Modulationssignal S5w und/oder in Abhängigkeit von Steuerungsdaten der Steuervorrichtung CTR, die die Steuervorrichtung CTR über den Datenbus DB an den Lichtquellentreiber LDRV übermittelt, die Lichtquelle LED mit elektrischer Energie. Typischerweise können das LED-Modulationssignal S5w und/oder die Steuerungsdaten der Steuervorrichtung LED also die Intensität der Pumpstrahlung LB, die die Lichtquelle LED emittiert modulieren. Im Extremfall können das LED-Modulationssignal S5w und/oder die Steuerungsdaten der Steuervorrichtung LED also die Emission der Pumpstrahlung LB, die die Lichtquelle LED insbesondere in Abhängigkeit von einem computerimplementieren Lichterzeugungsprogramm in einem Speicher RAM, NVM der Vorrichtung, dass die Steuervorrichtung CTR zumindest zeitweise ausführt, an- und ausschalten. Ein optionales optischer Shortpass-Filter 4 lässt bevorzugt nur die Pumpstrahlung LB mit Pumpstrahlungswellenlänge λ_pmp der Lichtquelle LED passieren und hält bevorzugt die elektromagnetische Strahlung 27 anderer Wellenlängenbereiche zurück. Sofern die Lichtquelle LED keine unerwünschte elektromagnetische Strahlung 27 anderer Wellenlängenbereiche emittiert, ist dieses optische Shortpass-Filter 4 nicht notwendig. Eine optionale, vorzugsweise vorhandene Beleuchtungsoptik 3 sorgt dafür, dass die Pumpstrahlung LB die Sensorelementschicht 5 möglichst homogen ausleuchtet. Die Beleuchtungsoptik 3 kann ein oder mehrere optische Funktionselemente wie Linsen, Blenden, Lichtwellenleiter, Prismen etc., wie sie in jedem Lehrbuch der technischen Optik zu finden sind, umfassen. Die Form der Linsen und/oder Spiegel und sonstigen optischen Funktionselemente der Beleuchtungsoptik 3 ist vorzugsweise so berechnet und ausgeformt, dass bei einer bekannten Abstrahlcharakteristik der Lichtquelle LED die Ausleuchtung der Sensorelementschicht 5 mit Pumpstrahlung LB homogen ist. Diese optischen Funktionselemente können auch Funktionselemente der diffraktiven Optik wie photonische Kristalle, dielektrische Spiegel, Hologramme etc. umfassen. Das hier vorgelegte Dokument verweist hier beispielhaft auf die Dokumente Baha E.A. Saleh, Malvin Carl Teich, „Grundlagen der Photonik” Wiley-VCH, 2007 und Bernhard C. Kress, Patrick Meyreueis „Applied Digital Optics“ Wiley, 2009

For the sake of completeness, the document presented here explains the functionality of the device proposed here in more detail:

• As an exemplary pump radiation source, the light source LED emits pump radiation LB with the pump radiation wavelength λ _pmp and possibly unwanted electromagnetic radiation 27 of other wavelength ranges. Optionally, a first signal generator G1 can again generate an LED modulation signal S5w with an LED modulation frequency f _LED . The control device CTR preferably controls the first signal generator G1 via the data bus DB. A light source driver LDRV preferably supplies the light source LED with electrical energy at least temporarily depending on the optional LED modulation signal S5w and / or depending on control data from the control device CTR, which the control device CTR transmits to the light source driver LDRV via the data bus DB. Typically, the LED modulation signal S5w and/or the control data of the control device LED can modulate the intensity of the pump radiation LB that the light source LED emits. In an extreme case, the LED modulation signal S5w and/or the control data of the control device LED can thus control the emission of the pump radiation LB, which the light source LED implements in particular as a function of a computer-implemented light generation program in a memory RAM, NVM of the device that the control device CTR executes at least temporarily , switch on and off. An optional optical shortpass filter 4 preferably allows only the pump radiation LB with pump radiation wavelength λ _pmp of the light source LED to pass through and preferably retains the electromagnetic radiation 27 of other wavelength ranges. If the light source LED does not emit any unwanted electromagnetic radiation 27 of other wavelength ranges, this optical shortpass filter 4 is not necessary. An optional, preferably present illumination optics 3 ensures that the pump radiation LB illuminates the sensor element layer 5 as homogeneously as possible. The lighting optics 3 can include one or more optical functional elements such as lenses, diaphragms, optical fibers, prisms, etc., as can be found in every technical optics textbook. The shape of the lenses and/or mirrors and other optical functional elements of the lighting optics 3 is preferably calculated and shaped in such a way that, with a known radiation characteristic of the light source LED, the illumination of the sensor element layer 5 with pump radiation LB is homogeneous. These optical functional elements can also include functional elements of diffractive optics such as photonic crystals, dielectric mirrors, holograms, etc. The document presented here refers as an example to the documents Baha EA Saleh, Malvin Carl Teich, “Fundamentals of Photonics” Wiley-VCH, 2007 and Bernhard C. Kress, Patrick Meyreueis “Applied Digital Optics” Wiley, 2009

The sensor element layer 5 is preferably applied to the mechanical carrier substrate 1360, for example a flat surface 16. The flat surface can be achieved in particular by a dielectric 40 that eliminates unevenness in the waveguide (1360, 1880, 2380, 6830, 6980, 6980_1, 6980_II, 6980_III, 6980_IV). The device is preferably installed in a housing 8. The material of the housing wall of the housing 8 is preferably non-magnetic in this area and preferably essentially does not influence the magnetic field. Typically, the carrier substrate 1360 includes materials such as FR-4 (Flame Resistant-4) or PTFE (Polytetrafluoroethylene) or semiconducting materials such as pieces of circuit board materials or pieces of plastic sheet or foil and/or pieces of glass wafers or pieces of Ceramic wafers and/or pieces of semiconductor wafers, for example pieces of CMOS wafers or for example pieces of BiCMOS wafers, for example pieces of wafers from a bipolar technology or pieces of a wafer made of a III/V material or the like and/or, for example pieces of MEMS wafers and/or pieces of microelectronic circuits and/or, for example, pieces of MEOS wafers (MEOS = micro electro optical system) and/or, for example, pieces of MOEMS wafers etc. and/or pieces of MOEMS wafers, microelectronic circuits and functional elements and/or micro-optical functional elements and/or micromechanical functional elements and/or microfluidic functional elements. The sensor element layer 5 preferably comprises a large number of randomly and preferably uniformly distributed crystals with paramagnetic centers or diamond nanocrystals ND with paramagnetic centers and/or NV centers. The sensor element layer 5 preferably comprises a carrier material TM, in which the crystals with paramagnetic centers or diamond nanocrystals ND with paramagnetic centers and/or NV centers are embedded. The carrier material TM of the sensor element layer 5 is preferably a hardened carrier material TM. The carrier material TM of the sensor element layer 5 is preferably a carrier material TM cured by means of electromagnetic curing radiation 4910 of a curing wavelength λ _H. The sensor element layer 5 particularly preferably comprises a large number of randomly and preferably uniformly oriented diamond nanocrystals ND with NV centers. When using diamond as the crystal material of the diamond nanocrystals ND, the paramagnetic centers can be, for example, NV centers and/or SiV centers and/or TiV centers and/or GeV centers and/or SnV centers and/or NiN4 centers and/or PbV centers and/or ST1 centers. Other paramagnetic centers and/or crystal materials appear to be functionally equivalent. When using NV centers in diamond as crystals of the sensor element layer 5, the pump radiation LB preferably has a pump radiation wavelength λ _pmp in a wavelength range of 400 nm to 700 nm wavelength and/or better 450 nm to 650 nm and/or better 500 nm to 550 nm and/or better 515 nm to 540 nm. A wavelength of 532 nm is clearly preferred as the pump radiation wavelength λ _pmp . In the case of using NV centers in diamond or in diamonds of the sensor element layer 5, a laser diode from Osram of the type PLT5 520B is suitable, for example, as a light source LED with 520 nm pump radiation wavelength λ _pmp . When using NV centers in diamond crystals as diamond nanocrystals ND in the sensor element layer 5 as paramagnetic centers of the sensor element layer 5, the NV centers of the sensor element layer 5 typically emit fluorescence radiation FL upon irradiation with pump radiation LB of the above-described pump radiation wavelength λ _pmp a typical fluorescence wavelength λ _fl of approx. 637nm.

Preferably, the carrier material TM of the sensor element layer 5 is after hardening of the carrier material TM for electromagnetic radiation with the fluorescence radiation wavelength λ _tl of the paramagnetic centers of the crystals and/or the diamond nanocrystals ND and/or the NV centers of the diamond nanocrystals ND of the sensor element layer 5 transparent.

Preferably, the carrier material TM of the sensor element layer 5 is after hardening of the carrier material TM for electromagnetic radiation with the pump radiation wavelength λ _pmp of the light source LED for stimulating the emission of the fluorescent radiation FL of the paramagnetic centers of the crystals and/or the diamond nanocrystals ND and/or the NV centers of the diamond nanocrystals ND of the sensor element layer 5 transparent.

An imaging optics 7 preferably captures the image of the location-dependent intensity I _is of the fluorescence radiation FL with the fluorescence wavelength λ _fl , which the sensor element layer 5 uses by means of the paramagnetic centers, for example by means of the NV centers, in the sensor element layer 5 when excited by the pump radiation LB the pump radiation wavelength λ _pmp is generated.

The imaging optics 7 can include one or more optical functional elements such as lenses, diaphragms, optical fibers, prisms, mirrors, plane mirrors, convex and concave mirrors, etc., as can be found in every technical optics textbook. These optical functional elements can in particular also include functional elements of diffractive optics such as phononic crystals, dielectric mirrors, holograms, etc. The document presented here refers to the Baha EA documents as an example Saleh, Malvin Carl Teich, “Fundamentals of Photonics” Wiley-VCH, 2007 and Bernhard C. Kress, Patrick Meyreueis “Applied Digital Optics” Wiley, 2009.

An optical longpass filter F1 (6) preferably allows electromagnetic radiation with the fluorescence wavelength λ _fl and thus the fluorescence radiation FL to pass. The optical longpass filter F1 (13406) preferably blocks the passage of other electromagnetic radiation, for example that with the pump radiation wavelength λ _pmp , and thus the passage of the pump radiation LB. As a result, the imaging optics 7 can capture the image of the intensity distribution of the emission of the fluorescence radiation FL over the sensor element layer 5 in the wavelength range of the fluorescence wavelength λ _fl separately from other radiation images of other wavelengths and image it on the nxm photodetectors PD of the nxm light sensor array 1 of the fluorescence camera. For example, the imaging optics can include lenses and/or optical fiber bundles as vector optical fibers LWL with optical fibers as optical fiber bundle components. Here n and m are integer positive numbers. The light sensor array 1 is preferably a CMOS chip, even more preferably a micro-integrated CCD photodetector circuit, which preferably comprises evaluation electronics. Since the intensity I _is (x) of the fluorescence radiation FL of the sensor element layer 5 depends locally in the sensor element layer 5 on the total magnetic flux density B _Σ and the microwave frequency ω _µW (x) at the respective location x of the respective paramagnetic center in the sensor element layer 5, the image corresponds the intensity distribution of the intensity I _is (x) the emission of the fluorescence radiation FL via the sensor element layer 5, a magnetic flux density image of the field of the total magnetic flux density B _Σ that floods the sensor element layer 5, or a microwave frequency image that is non-linear from the distribution of the microwave frequencies of the microwave radiation in the area the sensor element layer b5 depends. Since, as a rule, the density distribution of the paramagnetic centers in the sensor element layer 5 and/or the illumination of the sensor element layer 5 with pump radiation LB and/or the detection of the intensity of the fluorescence radiation FL over the surface of the sensor element layer 5 cannot be produced completely homogeneously despite all efforts, It has proven to be a good idea to calibrate the system before its first use through calibration measurements. To process the measured values of the photodetectors PD of the light sensor array 1, evaluation electronics 15 of the light sensor array 1 record the measured values of the signals of the photodetectors PD of the light sensor array 1 and form the output signals 31 of the photodetectors PD of the light sensor array 1, in particular by amplification and/or filtering. These evaluation electronics 15 of the Light sensor arrays 1 correspond to the function of the first amplifier V1 in the previously discussed sensor element channels. The output signals 31 of the photodetectors PD of the light sensor array 1 correspond analogously to the received signals 50 of the previously discussed photodetectors PD. However, due to the high dimensionality, the evaluation can now typically no longer be carried out using a simple multiple correlator LIV, which may also be made available on a channel-by-channel basis. The document presented here proposes instead to carry out the analysis using a computer-implemented image and/or pattern recognition program that is stored in a memory (RAM, NVM) of the device and is executed by a processing device 30 as a control device CTR.

The processing device 30 for the output signals 31 (S0) of the photodetectors PD of the light sensor array 1 can optionally control further magnetic field generating means Lc by means of a control device LCTR if these do not only include the gradient-affected permanent magnet GPM. The further magnetic field generating means Lc can again be, for example, flat coils 2520 (Lc), which are supplied with an electrical current by the control device LCTR for the further magnetic field generating means Lc.

The processing device 30 for the output signals 31 of the photodetectors PD of the light sensor array 1 preferably generates an image of the intensity distribution of the fluorescence radiation FL of the sensor element layer 5 from the output signals 31 of the photodetectors PD of the light sensor array 1. Based on the relationships presented above, the image of the intensity distribution of the intensity I the fluorescence radiation FL of the sensor element layer 5 _represents a magnetic flux density image of the field of the total magnetic flux density B _Σ in the sensor element layer 5. The processing device 30 for the output signals 31 of the photodetectors PD of the light sensor array 1 can use this image of the intensity distribution of the intensity I _of the fluorescence radiation FL of the sensor element layer 15, for example, directly by means of the interface circuit 136 via a data bus 29 to a further and/or higher-level computer system 28 (CTR2). The further and/or higher-level computer system 28 (CTR2) can serve to operate the sensor system 21. The further and/or higher-level computer system 28 can be another control device CTR2 of the sensor system 21. For example, the further and/or higher-level computer system 28 for operating the sensor system 21 can be sent from the evaluation device 30 via a data interface 36 and a data bus 29 to the the further and/or higher-level computer system 28 transmitted image of the intensity distribution of the intensity I of the fluorescence radiation FL of the sensor element layer 5 _is a one- or two- or three-dimensional representation of the distribution of the total magnetic flux density B _Σ in the sensor element layer 5. In the example of 81 For example, four wave lines, here for example four exemplary differential tri-plate lines (6980_1, 6980_II, 6980_III, 6980_IV), are applied to a first surface of the carrier substrate 1360. In the example of the 81 the dielectric 40 covers the signal lines (6810, 6820) of the tri-plate line 6980 of these tri-plate lines (6980_1, 6980_II, 6980_III, 6980_IV) and the respective electrically conductive left signal ground surface 1310 and the respective electrically conductive right signal ground surface 1320 and For example, for planarization, fills the respective non-conductive left insulation gap 2340 and the respective non-conductive right insulation gap 2350 and the electrically insulating gap 6840 between the respective left signal conductor 6810 and the respective right signal conductor 6820 of the respective differential signal conductor 6830, so that an im Substantially smooth intermediate surface 16 results, on which the sensor element layer 5 is applied, for example. In the example of the 81 The dielectric 40 therefore also serves the purpose of ensuring a planar surface 16 for applying the sensor element layer 5 to the carrier substrate 1360 in order to reduce the artifacts in computer-implemented image and pattern recognition. The further and/or the higher-level computer system 28 can, for example, represent the received images and/or the extracted measured values on the screen 32 as a further control device CTR2 of the sensor system 21.

The data bus 29 serves to establish the data connection between the processing device 30 (CTR) for the output signals 31 of the photodetectors PD of the light sensor array 1 (receiver output signals S0 or digitized receiver output signals S1 or analog receiver output signals 51) and the further and/or higher-level computer system 28 ( CTR2) for operating the sensor system 21. The external magnetic flux densities B _ext acting from the outside on the sensor element layer 5, which contribute to the total flux density B _Σ influencing the sensor element layer 5, and the external microwave radiation S _ωnk influence the intensity distribution of the intensity I _is the fluorescence radiation through superposition FL of the sensor element layer 5. and thus the images that the processing device 30 for the output signals 31 of the photodetectors PD of the light sensor array 1 as images of the intensity distribution of the intensity I _is the fluorescent radiation FL of the sensor element layer 5, for example directly by means of the interface circuit 36 via a data bus 29 to the further and/or higher-level computer system 28 (CTR2).

In order to capture as much data as possible with one image, the exemplary device has, for example, four microwave signal sources (µWG_I, µWG_II, µWG_III, µWG_IV). Preferably, the four example microwave signal sources (µWG_I, µWG_II, µWG_III, µWG_IV) are part of a vector microwave signal source µW. Each of these four exemplary microwave signal sources (µWG_I, µWG_II, µWG_III, µWG_IV) generates one of four microwave signals (µW_I, µW_II, µW_III, µW_IV) in the example. I.e. the vector microwave signal source µW generates a vector microwave signal µW, which includes these four microwave signal sources (µWG_I, µWG_II, µWG_III, µWG_IV), for example. There are, for example, four wave lines on the carrier substrate 1360, here for example four triplate lines (6980_1, 6980_II, 6980_III, 6980_IV).

In the example of the 81 the first microwave source µWG_I feeds the first microwave signal µW_I into the first wave line, here a first tri-plate line 6980_I.

In the example of the 81 the second microwave source µWG_I feeds the second microwave signal µW_II into the second wave line, here a second tri-plate line 6980_II.

In the example of the 81 the third microwave source µWG_III feeds the third microwave signal µW_III into the third wave line, here a third tri-plate line 6980_III.

In the example of the 81 the fourth microwave source µWG_IV feeds the fourth microwave signal µW_IV into the fourth wave line, here a fourth tri-plate line 6980_IV.

The four wave lines, here in the example 81 the exemplary four tri-plate lines (6980_1, 6980_II, 6980_III, 6980_IV), together form a vector wave line, here a vector tri-plate line 6980, which the exemplary four tri-plate lines (6980_I, 6980_II, 6980_III, 6980_IV) in the example of 81 includes.

In the example of the 81 the vector microwave source µWG feeds the vector microwave signal µW into the vector wave line, here a vector tri-plate line 6980.

In the example of the 81 The first microwave source µWG_I generates the first microwave signal µW_I with a first microwave frequency ω _{µW_I} .

In the example of the 81 the second microwave source µWG_II generates the second microwave signal µW_II with a second microwave frequency ω _{µW_II} .

In the example of the 81 The third microwave source µWG_III generates the third microwave signal µW_III with a third microwave frequency ω _{µW_III} .

In the example of the 81 The fourth microwave source µWG_IV generates the fourth microwave signal µW_IV with a fourth microwave frequency ω _{µW_IV} .

The first microwave frequency ω _{µW_I} and the second microwave frequency ω _{µW_II} and the third microwave frequency ω _{µW_III} and the fourth microwave frequency ω _{µW_IV} can be understood together as a vector microwave frequency ω _µW .

In the example of the 81 The vector microwave source µWG generates the vector microwave signal µW with a vector microwave frequency ω _µW .

In order to be able to capture a maximum of information, the first microwave frequency ω _{µW_I} and the second microwave frequency ω _{µW_II} and the third microwave frequency ω _{µW_III} and the fourth microwave frequency ω _{µW_IV} are preferably different from one another.

These four microwave frequencies (ω _{µW_I} , ω _{µW_II} , ω _{µW_III} , ω _{µW_IV} ) then define in 51b four vertical virtual lines on which the working points must lie. (See below 82 .)

By using a gradient permanent magnet GPM, these vertical lines actually become visible as measured values and can be extracted directly from the images of the light sensor array 1 using a computer-implemented pattern recognition and/or image processing method. The processing device 30 for the output signals 31 of the photodetectors PD of the light sensor array 1 and/or the pattern recognition device MEV and/or the further and/or higher-level computer system CTR2 (28) preferably carry out the computer-implemented pattern recognition and/or image processing method. The program data with the program code for the computer-implemented pattern recognition and/or image processing method is preferably located in a storage medium, for example in a memory (RAM, NVM) of the system. Preferably, the processing device 30 for the output signals 31 of the photodetectors PD of the light sensor array 1 and/or the pattern recognition device MEV and/or the further and/or higher-level computer system CTR2(28) carry the program code for the computer-implemented pattern recognition and/or image processing method in a storage medium, for example, in a memory (RAM, NVM) of the system when executing these methods.

An optional first second signal generator G2_I generates a first microwave modulation signal S5m_I with a first microwave modulation frequency f _{µW_I} .

An optional second second signal generator G2_II generates a second microwave modulation signal S5m_II with a second microwave modulation frequency f _{µW_II} .

An optional third second signal generator G2_III generates a third microwave modulation signal S5m_III with a third microwave modulation frequency f _{µW_III} .

An optional fourth second signal generator G2_IV generates a fourth microwave modulation signal S5m_IV with a fourth microwave modulation frequency f _{µW_IV} .

Preferably, the reciprocal of the first microwave modulation frequency f _{µW_I} is an integer multiple of the image repetition period of the light sensor array 1. (English: frame rate)

The reciprocal of the second microwave modulation frequency f _{µW_II} is preferably an integer multiple of the image repetition period of the light sensor array 1. (English: frame rate)

The reciprocal of the third microwave modulation frequency f _{µW_III} is preferably an integer multiple of the image repetition period of the light sensor array 1. (English: frame rate)

The reciprocal of the fourth microwave modulation frequency f _{µW_IV} is preferably an integer multiple of the image repetition period of the light sensor array 1. (English: frame rate)

This avoids alaising effects.

The processing device 30 for the output signals 31 of the photodetectors PD of the light sensor array 1 and/or the pattern recognition device MEV and/or the further and/or higher-level

Computer system CTR2(28) can typically set the first microwave modulation frequency f _{µW_I} of the first microwave modulation signal S5m_I of the first second signal generator G2_I via the data bus DB.

The processing device 30 for the output signals 31 of the photodetectors PD of the light sensor array 1 and/or the pattern recognition device MEV and/or the further and/or higher-level computer system CTR2(28) can typically transmit the second microwave modulation frequency f _{µW_II} of the second microwave modulation signal S5m_II of the second second signal generator G2_II set the data bus DB.

The processing device 30 for the output signals 31 of the photodetectors PD of the light sensor array 1 and / or the pattern recognition device MEV and / or the further and / or higher-level computer system CTR2 (28) can typically use the third microwave modulation frequency f _{µW_III} of the third microwave modulation signal S5m_III of the third second signal generator G2_III set the data bus DB.

The processing device 30 for the output signals 31 of the photodetectors PD of the light sensor array 1 and / or the pattern recognition device MEV and / or the further and / or higher-level computer system CTR2 (28) can typically use the fourth microwave modulation frequency f _{µW_IV} of the fourth microwave modulation signal S5m_IV of the fourth second signal generator G2_IV set the data bus DB.

The optional first microwave modulation signal S5m_I can typically, if present, modulate the amplitude of the first microwave signal µW_I.

The optional second microwave modulation signal S5m_II can typically, if present, modulate the amplitude of the second microwave signal μW_II.

The optional third microwave modulation signal S5m_III can typically, if present, modulate the amplitude of the third microwave signal μW_III.

The optional fourth microwave modulation signal S5m_IV can typically, if present, modulate the amplitude of the fourth microwave signal μW_IV.

Preferably, the first second signal generator G2_I also transmits the first microwave modulation signal S5m_I to the processing device 30 for the output signals 31 of the photodetectors PD of the light sensor array 1 and/or the pattern recognition device MEV and, if necessary, indirectly via this to the further and/or higher-level computer system CTR2(28). .

Preferably, the second second signal generator G2_II also transmits the second microwave modulation signal S5m_II to the processing device 30 for the output signals 31 of the photodetectors PD of the light sensor array 1 and/or the pattern recognition device MEV and, if necessary, indirectly via this to the further and/or higher-level computer system CTR2(28). .

Preferably, the third second signal generator G2_III also transmits the third microwave modulation signal S5m_III to the processing device 30 for the output signals 31 of the photodetectors PD des Light sensor arrays 1 and/or the pattern recognition device MEV and, if necessary, indirectly via these to the further and/or higher-level computer system CTR2 (28).

Preferably, the first fourth signal generator G2_IV also transmits the fourth microwave modulation signal S5m_IV to the processing device 30 for the output signals 31 of the photodetectors PD of the light sensor array 1 and/or the pattern recognition device MEV and, if necessary, indirectly via this to the further and/or higher-level computer system CTR2(28). .

If such a modulation takes place in accordance with the vector microwave modulation signal S5m, the processing device 30 takes into account the output signals 31 of the photodetectors PD of the light sensor array 1 and / or the pattern recognition device MEV and, if necessary, indirectly via this to the further and / or higher-level computer system CTR2 (28). respective vector value of the vector microwave modulation signal S5m when executing the computer-implemented image recognition methods and/or pattern recognition methods.

After evaluating one or more images of the light sensor array 1, the processing device 30 for the output signals 31 of the photodetectors PD of the light sensor array 1 and / or the pattern recognition device MEV and / or the further and / or higher-level computer system CTR2 (28) preferably determine a need for refinement to improve the precision of the measurement results. For this purpose, the processing device 30 for the output signals 31 of the photodetectors PD of the light sensor array 1 and/or the pattern recognition device MEV and/or the further and/or higher-level computer system CTR2 (28) preferably carry out, for example, a computer-implemented Bayesian optimization method. The program code for the exemplary Bayesian optimization method is preferably stored in a storage medium of the device, in particular a memory (RAM, NVM). The processing device 30 for the output signals 31 of the photodetectors PD of the light sensor array 1 and/or the pattern recognition device MEV and/or the further and/or higher-level computer system CTR2 (28) preferably carry out this program code when executing the computer-implemented Bayesian optimization method.

During the exemplary Bayesian optimization method, the processing device 30 for the output signals 31 of the photodetectors PD of the light sensor array 1 and / or the pattern recognition device MEV and / or the further and / or higher-level computer system CTR2 (28) can, for example, via the data bus DB new vector microwave frequencies ( ω _{µW_I} , ω _{µW_II} , ω _{µW_III} , ω _{µW_IV} ) in the vector microwave source µW and so the diagram is recorded 51b suitably refine other microwave frequencies (ω _{µW_I} , ω _{µW_II} , ω _{µW_III} , ω _{µW_IV} ) at points of interest.

During the exemplary Bayesian optimization method, the processing device 30 for the output signals 31 of the photodetectors PD of the light sensor array 1 and/or the pattern recognition device MEV and/or the further and/or higher-level computer system CTR2(28) can process other additional magnetic flux densities, for example via the data bus DB Set B _ad , which the magnetic field generating device L _c generates and which contributes to the total flux density B _Σ in each case.

As a result, the processing device 30 for the output signals 31 of the photodetectors PD of the light sensor array 1 and / or the pattern recognition device MEV and / or the further and / or higher-level computer system CTR2 (28) can control the detection area in the 51b move it up or down and thus bring more significant locations, such as the point of the zero point microwave frequency ω _µW0 and the zero point flux density Bo, into the detection range. Such positions are particularly easy to recognize. This allows the sensor device to very quickly improve the precision of the measured values and by determining the position of the curve 51b In a flux density microwave frequency diagram, determine the parameters of an external magnetic flux density B _ext and an unknown microwave frequency ω _µWnk of an externally acting microwave field, in particular by mixing with a mixing frequency.

1. 1. Informationen über die wahrscheinliche Lage der unteren Resonanzkante 522,
2. 2. Informationen über die wahrscheinliche Lage der unteren mittleren Resonanzkante 523,
3. 3. Informationen über die wahrscheinliche Lage der oberen mittleren Resonanzkante 524,
4. 4. Informationen über die wahrscheinliche Lage der oberen Resonanzkante 525,
5. 5. Informationen über die wahrscheinliche Lage des mittleren Resonanzminimums 529,
6. 6. Informationen über den wahrscheinlichen Wert der wirksamen Offsetflussdichte B_off,
7. 7. Informationen über den wahrscheinlichen Wert der Nullpunktsflussdichte B₀,
8. 8. Informationen über den wahrscheinlichen Wert der Nullpunktsmikrowellenfrequenz ω_µW0,

The control device CTR (processing device 30) and/or the pattern recognition device MEV and/or the further and/or higher-level computer system CTR2(28) preferably determine one or more of the following measured values or groups of measured values using the said computer-implemented image processing and/or pattern recognition algorithms:

1. 1. Information about the probable location of the lower resonance edge 522,
2. 2. Information about the probable location of the lower middle resonance edge 523,
3. 3. Information about the probable location of the upper middle resonance edge 524,
4. 4. Information about the probable location of the upper resonance edge 525,
5. 5. Information about the probable location of the mean resonance minimum 529,
6. 6. Information about the probable value of the effective offset flux density B _off ,
7. 7. Information about the probable value of the zero point flux density B ₀ ,
8. 8. Information about the probable value of the zero point microwave frequency ω _µW0 ,

• 9. Informationen über den wahrscheinlichen Wert 564 der magnetischen Flussdichte B₆₁, der der oberen Referenzlinie 561 zugeordnet ist, an einem oder mehreren Arbeitspunkten,
• 10. Informationen über den wahrscheinlichen Wert 565 der magnetischen Flussdichte B₆₂, der der unteren Referenzlinie 562 zugeordnet ist, an einem oder mehreren Arbeitspunkten,
• 11. Informationen über die wahrscheinliche Differenz 566 des Werts der magnetischen Flussdichte B₆₃, der der mittleren Referenzlinie 563 zugeordnet ist, minus dem Wert 565 der magnetischen Flussdichte B₆₂, der der unteren Referenzlinie 562 zugeordnet ist,
• 12. Informationen über die wahrscheinliche Steigung 567 der Kurve an einem oder mehreren Arbeitspunkten;
• 13. Informationen über die Polynomkoeffizienten der Polynomapproximation 627 der Kurve in einigen Arbeitspunkten,
• 14. Informationen über den wahrscheinlichen Wert einer unteren wirksamen magnetischen Flussdichte B₂₂,
• 15. Informationen über den wahrscheinlichen Wert einer unteren mittleren wirksamen magnetischen Flussdichte B₂₃,
• 16. Informationen über den wahrscheinlichen Wert einer oberen mittleren wirksamen magnetischen Flussdichte B₂₄,
• 17. Informationen über den wahrscheinlichen Wert einer oberen wirksamen magnetischen Flussdichte B₂₅,
• 18. Informationen über den wahrscheinlichen Wert einer wirksamen magnetische Resonanzminimum-Flussdichte B₂₉,
• 19. Informationen über den wahrscheinlichen Wert einer Nullpunktsmikrowellenfrequenz ω_µW0;
• 20. den wahrscheinlichen Wert einer unteren Mikrowellenfrequenz ω_µW22;
• 21. Informationen über den wahrscheinlichen Wert einer unteren mittleren Mikrowellenfrequenz ω_µW23;
• 22. Informationen über den wahrscheinlichen Wert einer oberen mittleren Mikrowellenfrequenz ω_µW24;
• 23. Informationen über den wahrscheinlichen Wert einer oberen Mikrowellenfrequenz ω_µW25;
• 24. Informationen über den wahrscheinlichen Wert einer Resonanzminimum-Mikrowellenfrequenz ω_µW29;
• 25. Informationen über den wahrscheinlichen Wert einer unbekannten Mikrowellenfrequenz ω_µWnk;
• 26. Informationen über den wahrscheinlichen Wert einer Mikrowellenmodulationsfrequenz f_µW;

After further measurements, the control device CTR and/or the pattern recognition device MEV or an evaluation device 30 and/or the further and/or higher-level computer system CTR2(28) can also conclude here on one or more of the following values:

• 9. Information about the probable value 564 of the magnetic flux density B ₆₁ associated with the upper reference line 561 at one or more operating points,
• 10. Information about the probable value 565 of the magnetic flux density B ₆₂ associated with the lower reference line 562 at one or more operating points,
• 11. Information about the probable difference 566 of the value of the magnetic flux density B ₆₃ associated with the middle reference line 563 minus the value 565 of the magnetic flux density B ₆₂ associated with the lower reference line 562,
• 12. Information about the probable slope 567 of the curve at one or more operating points;
• 13. Information about the polynomial coefficients of the polynomial approximation 627 of the curve at some operating points,
• 14. Information about the probable value of a lower effective magnetic flux density B ₂₂ ,
• 15. Information about the probable value of a lower mean effective magnetic flux density B ₂₃ ,
• 16. Information about the probable value of an upper average effective magnetic flux density B ₂₄ ,
• 17. Information about the probable value of an upper effective magnetic flux density B ₂₅ ,
• 18. Information about the probable value of an effective magnetic resonance minimum flux density B ₂₉ ,
• 19. Information about the probable value of a zero point microwave frequency ω _µW0 ;
• 20. the probable value of a lower microwave frequency ω _µW22 ;
• 21. Information about the probable value of a lower mean microwave frequency ω _µW23 ;
• 22. Information about the probable value of an upper mean microwave frequency ω _µW24 ;
• 23. Information about the probable value of an upper microwave frequency ω _µW25 ;
• 24. Information about the probable value of a resonance minimum microwave frequency ω _µW29 ;
• 25. Information about the probable value of an unknown microwave frequency ω _µWnk ;
• 26. Information about the probable value of a microwave modulation frequency f _µW ;

Figure 82

82 shows the diagram of the 51b , whereby four exemplary microwave frequencies (ω _{µW_I} , ω _{µW_II} , ω _{µW_III} , ω _{µW_IV} ) are now shown, with which, for example, a device according to the 81 the measured values of the intensity of the I _fl (B _ad ) fluorescence radiation FL are determined along the four vertical lines drawn for various additional amounts of the magnetic flux density B _ad . This allows the control device CTR and/or the pattern recognition device MEV or an evaluation device 30 determine the first operating point 14401 with the values B ₂₂ , ω _µW,22 =ω _{µW_I} and the second operating point 14402 with the values B ₂₂ , ω _µW,22 =ω _{µW_II} on the lower resonance edge 522.

In addition, this allows the control device CTR and/or the pattern recognition device MEV or an evaluation device 30 to set the third operating point 14403 with the values B ₂₅ , ω _µW,25 = ω _{µW_III} , and the fourth operating point 14404 with the values B ₂₂ , ω _µW,25 =ω _{µW_IV} on the upper resonance edge 25. It is easy to see that for microwave frequencies ω _µW that are greater than the zero point microwave frequency ω _µW0 , intersections of the vertical lines with the lower middle resonance edge 523, with the upper middle resonance edge 524 and with the middle resonance minimum 529 can also arise. Depending on the application, it may be better to use the left area of the diagram 51b with ω _µW <W _µW0 (more precise and unambiguous) or the right area of the diagram 51b with ω _µW >ω _µW0 (more information). Using computer-implemented methods, the pattern recognition device MEV and/or the control device CTR can determine the position of the tip 30 of the F-formation (522, 525) and derive measured values for the desired physical parameters from this.

Figure 83

83 shows an example of the internal structure of a vector microwave source µWG with the microwave sources (µWG_I, µWG_II, µWG_III, µWG_IV). 81 in the case of mixing an external signal S _ωnk with an unknown microwave frequency ω _nk using the example of the microwave sources (µWG_I, µWG_II, µWG_III, µWG_IV). 81 .

In the example, the first internal microwave source µW_G_I generates the first internal microwave signal µW_G_I depending on the first microwave modulation signal S5m_I and the parameters set via the data bus DB by the control device CTR or the evaluation device 30 or the pattern recognition device MEV. The amplitude of the first internal microwave signal µW_G_I preferably depends on the first microwave modulation signal S5m_I. The first internal microwave signal µW_G_I has a first microwave frequency ω _{µW_I} .

A first internal mixer µW_MX_I within the first microwave source µWG_I now mixes the first internal microwave signal µW_G_I with the signal S _ωnk with the unknown microwave frequency ω _nk . The first internal mixer µW_MX_I thus forms the first mixed microwave signal µW_MX_I. A first microwave filter µW_F_I (See 83 ) preferably eliminates one of the two transients arising at ω _{µW_I} -ω _nk and ω _{µW_I} +ω _nk in the first microwave mixed signal µW_MX_I and forms the first microwave signal µW_I. Preferably, the cutoff frequency of the first microwave filter µW_F_I with a low pass as the first microwave filter µW_F_I is smaller than the zero point microwave frequency ω _µW0 . Preferably, the cutoff frequency of the first microwave filter µW_F_I with a high pass as the first microwave filter µW_F_I is greater than the zero point microwave frequency ω _µW0 . This creates the diagram of the 51b concerning the position of the lower resonance edge 522 is converted into a reversible function ω _µW (B _ad ). (please refer 84 )

In the example, the second internal microwave source µW_G_II generates the second internal microwave signal µW_G_II depending on the second microwave modulation signal S5m_II and the parameters set via the data bus DB by the control device CTR or the evaluation device 30 or the pattern recognition device MEV. The amplitude of the second internal microwave signal µW_G_II preferably depends on the second microwave modulation signal S5m_II. The second internal microwave signal µW_G_II has a second microwave frequency ω _{µW_II} .

A second internal mixer µW_MX_II within the second microwave source µWG_II now mixes the second internal microwave signal µW_G_II with the signal S _ωnk with the unknown microwave frequency ω _nk . The second internal mixer µW_MX_II thus forms the second mixed microwave signal µW_MX_II. A second microwave filter µW_P_II (See 83 ) preferably eliminates one of the two transients arising at ω _{µW_II} -ω _nk and ω _{µW_II} +ω _nk in the second microwave mixed signal µW_MX_II and forms the second microwave signal µW_II. Preferably, the cutoff frequency of the second microwave filter µW_F_II with a low pass as the second microwave filter µW_F_II is smaller than the zero point microwave frequency ω _µW0 . Preferably, the cutoff frequency of the second microwave filter µW_F_II is greater than the zero point microwave frequency ω _µW0 in the case of a high pass as the second microwave filter µW_F_II. This creates the diagram of the 51b concerning the position of the lower resonance edge 522 is converted into a reversible function ω _µW (B _ad ). (please refer 84 )

In the example, the third internal microwave source µW_G_III generates the third internal microwave signal µW_G_III depending on the third microwave modulation signal S5m_III and the parameters set via the data bus DB by the control device CTR or the evaluation device 30 or the pattern recognition device MEV. The amplitude of the third internal microwave signal µW_G_III preferably depends on the third microwave modulation signal S5m_III. The third internal microwave signal µW_G_III has a third microwave frequency ω _{µW_III} .

A third internal mixer µW_MX_III within the third microwave source µWG_III now mixes the third internal microwave signal µW_G_III with the signal S _ωnk with the unknown microwave frequency ω _nk . The third internal mixer µW_MX_III thus forms the third mixed microwave signal µW_MX_III. A third microwave filter µW_F_III (See 83 ) preferably eliminates one of the two transients arising at ω _{µW_III} -ω _nk and ω _{µW_III} -ω _nk in the third microwave mixed signal µW_MX_III and forms the third microwave signal µW_III. Preferably, the cutoff frequency of the third microwave filter µW_F_III is smaller than the zero point microwave frequency ω _µW0 in the case of a low pass as the third microwave filter µW_F_III. Preferably, the cutoff frequency of the third microwave filter µW_F_III is greater than the zero point microwave frequency ω _µW0 in the case of a high pass as the third microwave filter µW_F_III. This creates the diagram of the 2 concerning the position of the lower resonance edge 522 is converted into a reversible function ω _µW (B _ad ). (please refer 84 )

In the example, the fourth internal microwave source µW_G_IV generates the fourth internal microwave signal µW_G_IV depending on the fourth microwave modulation signal S5m_IV and the parameters set via the data bus DB by the control device CTR or the evaluation device 30 or the pattern recognition device MEV. The amplitude of the fourth internal microwave signal µW_G_IV preferably depends on the fourth microwave modulation signal S5m_IV. The fourth internal microwave signal µW_G_IV has a fourth microwave frequency ω _{µW_IV} .

A fourth internal mixer µW_MX_IV within the fourth microwave source µWG_IV now mixes the fourth internal microwave signal µW_G_IV with the signal S _ωnk with the unknown microwave frequency ω _nk . The fourth internal mixer µW_MX_IV thus forms the fourth mixed microwave signal µW_MX_IVI. A fourth microwave filter µW_F_IV (See 83 ) preferably eliminates one of the two transients arising at ω _{µW_IV} -ω _nk and ω _{µW_IV} -ω _nk in the fourth microwave mixed signal µW_MX _{_} IV and forms the fourth microwave signal µW_IV. Preferably, the cutoff frequency of the fourth microwave filter µW_F_IV with a low pass as the fourth microwave filter µW_F_IV is smaller than the zero point microwave frequency ω _µW0 . Preferably, the cutoff frequency of the fourth microwave filter µW_F_IV with a high pass as the fourth microwave filter µW_F_IV is greater than the zero point microwave frequency ω _µW0 . This creates the diagram of the 51b concerning the position of the lower resonance edge 522 is converted into a reversible function ω _µW (B _ad ). (please refer 84 )

Figure 84

84 illustrates the function formation of the curve of the lower resonance edge 522 by low-pass filtering in the microwave filters (µW_F_I, µW_F_II, µW_F_III, µW_F_IV) (see 81 , 82 and 83 ).

Figure 85

• Zunächst gehen wir hier davon aus, dass die Kristalle bzw. Diamant-Nano-Kristalle ND in ausreichend großen Mengen in vorzugsweise im Wesentlichen gleicher Form vorliegen. Beispielhaft gehen wir hier davon aus, dass es sich bei den Kristallen bzw. Diamant-Nano-Kristallen ND um Nanodiamanten mit einem oder mehreren paramagnetischen Zentren, vorzugsweise mit einem oder mehreren NV-Zentren, handelt. Andere Kristallmaterialien und/oder paramagnetische Zentren sind denkbar, wenn sie ebenfalls eine Fluoreszenzstrahlung FL bei Bestrahlung mit einer Pumpstrahlung LB einer typischerweise Zentren spezifischen Pumpstrahlungswellenlänge λ_pmp emittieren. Die Diamant-Nano-Kristalle ND stehen hier somit beispielhaft für andere mögliche Kristalle mit möglicherweise anderen Eigenschaften und/oder anderen paramagnetischen Zentren. Auf den Rest dieses Dokuments wird hier verwiesen. Im Falle der Diamant-Nano-Kristalle ND, die Diamant umfassen, sind NV-Zentren als paramagnetische Zentren bevorzugt.

The basic idea of producing a colloidal lacquer KL for coating and/or printing on the carrier substrate 1360 is in 85 shown:

• First of all, we assume here that the crystals or diamond nanocrystals ND are present in sufficiently large quantities and preferably in essentially the same form. By way of example, we assume here that the crystals or diamond nanocrystals ND are nanodiamonds with one or more paramagnetic centers, preferably with one or more NV centers. Other crystal materials and/or paramagnetic centers are conceivable if they also emit fluorescent radiation FL upon irradiation with a pump radiation LB of a pump radiation wavelength λ _pmp that is typically center-specific. The diamond nanocrystals ND are examples of other possible crystals with possibly different properties and/or other paramagnetic centers. The remainder of this document is referenced here. In the case of the diamond nanocrystals ND comprising diamond, NV centers are preferred as paramagnetic centers.

The crystals with paramagnetic centers and/or diamond nanocrystals ND with paramagnetic centers and/or NV centers are mixed with the previously selected and suitably provided carrier material TM and, if necessary, a solvent LM to adjust the viscosity, for example into one container and mixed by stirring VR until a colloidal mixture (colloidal varnish KL) is formed, which is suitable for the intended further processing, for example in a subsequent spin-on coating or a printing process, for example a screen printing process and/or a stencil printing and/or pad printing. Pressure is suitable.

The document presented here suggests, for example, a clear, colorless, liquid photopolymer, for example the Norland optical adhesive 61, as a carrier material TM. Further information will be available at https://www.norlandprod.com/adhesives/noa%2061.html at the time of filing the document presented herein.

Norland Optical Adhesive 61 (“NOA 61”) is a clear, colorless, liquid photopolymer that cures under irradiation with a 4910 curing radiation with a curing wavelength of λ _H in the ultraviolet wavelength range. Because it is a one-component system with 100% solids content, it offers many advantages for bonding where the adhesive can be exposed to UV light. Using NOA 61 eliminates the need for premixing, drying or heat curing common with other adhesive systems. The curing time is typically short and depends on the applied thickness D _SE of the sensor element layer 5 or the sensor element SE and the available UV light energy. It is particularly useful if the vehicle TM meets Federal Specification MIL-A-3920 for optical adhesives. NOA 61, as a Carrier™, meets Federal Specification MIL-A-3920 dated February 21, 1977 for optical adhesives. The carrier material TM should be able to produce the best possible optical connection to the surface of the carrier substrate 1360. Accordingly, the carrier material TM should provide the best possible optical and/or mechanical connection to FR-4 surfaces (Flame Resistant-4) or PTFE surfaces (polytetrafluoroethylene) or surfaces of semiconducting materials, such as to surfaces of pieces of circuit board materials or pieces of plastic panels - or films and / or pieces of glass wafers or pieces of ceramic wafers and / or pieces of semiconductor wafers, for example surfaces of pieces of CMOS wafers or for example pieces of BiCMOS wafers, for example pieces of wafers from a Bipolar technology or pieces of a wafer made of a III/V material or the like and/or, for example, pieces of MEMS wafers and/or pieces of microelectronic circuits and/or, for example, pieces of MEOS wafers (MEOS = micro electro optical system) and/or for example pieces of MOEMS wafers etc. and/or pieces of MOEMS wafers of microelectronic circuits and microelectronic functional elements and/or micro-optical functional elements and/or micromechanical functional elements and/or microfluidic functional elements depending on the area of application. NOA61 generally meets these requirements and in particular over the required temperature range and typically the expected service life. However, this does not make product qualification superfluous. It is particularly advantageous to use a carrier material TM, which is recommended for bonding lenses, prisms and mirrors for military, aerospace and commercial optics as well as for terminating and splicing optical fibers. NOA61 meets these requirements.

According to the manufacturer, the carrier material TM should also typically be characterized by excellent clarity, low shrinkage and light flexibility. These properties are important to enable the user to produce high quality sensor elements SE and/or sensor element layers SE(5) and achieve long-term performance under varying aggressive environmental conditions.

NOA 61 cures, as desired for the carrier material TM, with ultraviolet light as curing radiation 4910, with the maximum absorption being in the range of 320-380 nanometers for the curing wavelength λ _H and the highest sensitivity for curing of NOA61 at a curing wavelength λ _H of 365 nm is achieved. The recommended energy for complete curing is 3 joules/cm ² at these curing wavelengths λ _H . The curing of NOA 61 is not inhibited by oxygen, so all areas in contact with air will cure to a non-tacky state when exposed to ultraviolet light as curing radiation 4910.

For most optical applications, curing takes place in two steps using the 4910 curing radiation. First, there is a short, uniform exposure, the so-called pre-curing, with curing radiation 4910 with a curing wavelength λ _H. The curing time is long enough to solidify the compound and allow it to be moved/transported without the disrupting alignment. This is followed by longer curing under UV light as curing radiation 4910 in order to achieve complete crosslinking and solvent resistance of the adhesive, for example NOA 61. Curing with Curing Radiation 4910 in the example NOA 61 as the carrier material TM can be done in 10 seconds with a 100 watt mercury lamp at 6". If a longer time is required for the alignment, it can be done with a light source for Curing Radiation 4910 with a very low Intensity can be extended to a few minutes in the case of the exemplary carrier material TM NOA 61. The final curing can be achieved in the case of the exemplary carrier material TM with the 100 watt mercury lamp in 5 to 10 minutes.

The pre-hardening enables the user to quickly align and fix the carrier substrate 1360 and/or optical fiber LWL with one another in the case of separate provision if necessary, and minimizes the number of holding devices required. After prefixing, excess adhesive can be wiped and/or rinsed with a cloth moistened with alcohol or acetone as an example solvent LM. The fiber optic cables should be checked at this point and the rejects separated into methylene chloride. The coated area of the sensor elements SE and/or the sensor element layers 5 typically has to be soaked in the solvent LM for rework and usually dissolves overnight. The time required to release the carrier material TM for rework depends on the extent of curing and the size of the coating.

After curing, NOA 61 as a carrier material TM has very good adhesion and solvent resistance, but it has not yet achieved its optimal adhesion to glass and/or SiOz semiconductor wafer surfaces. This is achieved by aging over a period of approximately 1 week, during which a chemical bond is formed between the glass or SiO ₂ surface on the one hand and the carrier material TM. This optimal adhesion can also be achieved by aging the carrier substrate 1360 with the sensor element layer 5 and/or the sensor elements SE at 50° C. for 12 hours in a temperature cabinet.

NOA 61 can withstand temperatures from -15°C to 60°C before aging when used to coat the optical fiber LWL and/or the carrier substrate 1360. After aging, it can withstand temperatures from -150°C to 125°C. This makes this carrier material TM NOA 61 suitable for automobiles. As a coating on the surface of the optical fiber LWL and/or the carrier substrate 1360, NOA 61 can withstand temperatures of 260°C for three hours and during reflow soldering. This is of particular interest when the carrier substrate is a circuit board material, for example with electronic components. In this context, the document presented here refers to the as yet unpublished document DE 10 2023 111 858.7 . As a result, the sensor element SE and/or the sensor element layer 5 and/or the proposed optical waveguide LWL can be used up to these temperatures for measuring the total magnetic flux density B _Σ and/or for measuring unknown microwave frequencies ω _nk . The document presented here therefore suggests the use of a proposed optical waveguide LWL and / or the sensor element SE and / or the sensor element layer 5 at temperatures above 100 ° C and / or even above 110 ° C and / or even above 120 ° C and /or even above 130°C and/or even above 140°C and/or even above 150°C and/or even above 160°C and/or even above 170°C and/or even above 180°C and/or even above 190°C and/or even above 200°C and/or even above 210°C and/or even above 220°C and/or even above 230°C and/or or even above 240°C and/or even above 250°C and/or even above 260°C. It should be noted here that the properties of the material of a proposed optical fiber LWL and/or the sensor element SE and/or the sensor element layer 5 were not taken into account here, which may no longer allow these temperature ranges, which would have to be checked in the event of rework.

Typical properties of a carrier material TM are a solids content of more than 80%, a viscosity at 25 ° C of more than 250 cps, a refractive index of the hardened carrier material TM of more than 1.2, an elongation at break of less than 50% or more than 25 % depending on the application, an elastic modulus of less than (psi) 200,000, a tensile strength of more than (psi) 3,000 and a hardness of more than Shore D 60.

Typical properties of NOA 61 as an exemplary carrier material TM are a solids content of 100%, a viscosity at 25 ° C of 300 cps, a refractive index of the cured polymer of the carrier material TM of 1.56, an elongation at break of 38%, a modulus of elasticity of (psi) 150,000, a tensile strength of (psi) 3,000 and a hardness of Shore D 85.

As already described, these methods are in principle not limited to the use of carrier material TM (NAO 61 in, for example, alcoholic solution) and these crystals or diamond nanocrystals ND with paramagnetic centers, in particular NV centers. For example, instead of diamonds with NV centers as diamond nanocrystals ND, diamond nanocrystals ND with SiV centers and/or with TiV centers and/or with GeV centers and/or with SnV centers and /or with NiN4 centers and/or with PbV centers and/or with ST1 centers can be used as paramagnetic centers, although their suitability would have to be checked beforehand by a qualified person during rework. Such alternative paramagnetic centers and/or materials for crystals and/or diamond nanocrystals ND must be useful for fulfilling the technical purpose of the system to be manufactured, which would have to be checked at the beginning of any rework. To simplify the description, we do not show all sensible variants here. However, the stress also includes such combinations. Other combinations of crystals of other materials and other carrier materials TM and other solvents LM can also be used if the technical task to be solved by the system to be produced and the intended production method (varnishing and/or printing and/or local wetting) require this. In the following, only the term painting is mostly used. If applicable, this term should also include the terms lacquering, coating and/or local wetting. The reference symbol ND here stands not only for diamond nanocrystals ND, which include diamond as a material, but also for more general crystals.

The crystals can also be poly-crystalline and then also include different materials and layers. For example, they can be silicon nanocrystals and/or crystals and mixed crystals, for example comprising III/V materials, which are encased, for example, by an SiO ₂ layer or another optically transparent insulation layer in the relevant wavelength ranges (λ _pmp , λ _fl ). and preferably have suitable paramagnetic centers. For example, numerous different transparent varnishes are known from the prior art, which can, if necessary, be tested for their suitability as a carrier material TM when used instead of NOA61. What is written here applies to the diamond nanocrystals ND throughout the document.

Figure 86

The basic version of the method presented here envisages applying a colloidal lacquer KL comprising a carrier material TM and crystals and/or diamond nanocrystals ND to the carrier substrate 1360.

Typically, the carrier substrate 1360 includes materials such as FR-4 (Flame Resistant-4) or PTFE (Polytetrafluoroethylene) or semiconducting materials such as pieces of circuit board materials or pieces of plastic sheets or films and/or pieces of glass wafers or pieces of ceramic Wafers and/or pieces of semiconductor wafers, for example pieces of CMOS wafers or for example pieces of BiCMOS wafers and/or for example pieces of wafers from a bipolar technology and/or pieces of a wafer made from a III/V material or the like and/ or, for example, pieces of MEMS wafers and/or pieces of microelectronic circuits and/or, for example, pieces of MEOS wafers (MEOS = micro electro optical system) and/or, for example, pieces of MOEMS wafers etc. and/or pieces of microelectronic MOEMS wafers Circuits and microelectronic functional elements and/or micro-optical functional elements and/or micromechanical functional elements and/or microfluidic functional elements.

The colloidal lacquer KL can be applied to the carrier substrate 1360, for example, by spin-coating or spraying or printing or similar methods. (See Figure 147.) With regard to the coating processes possible in the state of microtechnology, reference is made here, as an example, to Marc J. Madou “Fundamentals of Microfabrication: the science of miniaturization” CRC Press 2002.

The 86 represents a possible, corresponding coating process by way of example. The colloidal lacquer KL is, for example, applied to the latter in a preferably predetermined time course of quantities per unit of time by means of a dispenser DP, a special metering device, preferably in the center of symmetry of the exemplary carrier substrate 1360, here an exemplary wafer. The exemplary carrier substrate 1360 in the form of the exemplary wafer, which here represents the exemplary carrier substrate 1360, lies in this example on the turntable of a paint spinner SC. This turntable of the paint spinner SC rotates at a process-typical speed, typically in accordance with a process-typical temporal speed profile. The application and the rotation speed can depend on the time since the start of the coating, for example by the dispenser DP, in order to achieve a To ensure optimal results for coating with the colloidal varnish KL and the placement of the nanoparticles NP. They therefore preferably follow a rotational speed profile or a time profile of the application amount of the colloidal lacquer KL.

Figure 87

The exemplary steps of a wafer-based coating process are in 87 shown schematically and simplified as an example.

The exemplary coating process in question 87 begins with the start of the proceedings in 14910.

This is followed by providing 14920 carrier substrate 1360, preferably a semiconductor substrate - for example a wafer.

This is then preferably followed by the provision 14930 of a colloidal lacquer KL in the form of a colloidal solution of crystals or diamond nanocrystals ND in a still liquid carrier material TM and, if necessary, an additional solvent. The provision 14920 of the carrier substrate 1360 and the provision 14930 of a colloidal lacquer KL can take place in any order one after the other or simultaneously. The crystals or diamond nanocrystals ND preferably include paramagnetic centers and/or NV centers in diamond.

The colloidal lacquer KL is later structured and hardened into a structured colloidal film in the form of the sensor elements SE on the carrier substrate 1360, preferably by means of curing radiation 4910 with the curing wavelength λ _H. The colloidal lacquer KL is preferably structured into a structured colloidal film in the form of the sensor elements SE on the carrier substrate 1360, most preferably locally and selectively hardened by means of a locally selectively projected or supplied curing radiation 4910 with the curing wavelength λ _H. Optical functional elements of the device, for example optical waveguides LWL and/or carrier substrates 1360 used as optical waveguides, which later have to be adjusted relative to the then formed sensor elements SE and/or the then formed sensor element layers 5, are preferably used for supplying hardening radiation 4910 with the hardening wavelength λ _H , so that this feed automatically results in a self-adjusting curing effect of the UV-curable colloidal lacquer KL when forming the sensor elements SE and/or the sensor element layers 5 relative to these optical functional elements of the device, for example optical fiber LWL and/or carrier substrates 1360 used as optical fibers . So that this later hardened colloidal film in the form of the sensor elements SE can adhere to the surface of the carrier substrate 1360, the colloidal lacquer KL of the crystals or diamond nanocrystals ND should be able to wet at least parts of the carrier substrate 1360. This can be controlled, for example, by one or more optional prior plasma treatments 14950 with hydrogen or oxygen or the like as is known. Here, the wetting properties of the surface can also be modulated in the area (wetting vs. non-wetting) using photolithography 14940 that precedes the plasma treatment. For this purpose, before the plasma treatment 14950, some surface areas are selectively covered, for example with photoresist in the said photolithography step 14940, and other areas that are to be treated are not covered with photoresist, so that they are exposed to the plasma. Such a modulation of the wetting properties would therefore be a further optional additional work step in the form of photolithography 14940, which is conceivable.

After the optional plasma treatment 14950, the cover coat is typically removed again 14960 if the photolithography step 14940 was previously carried out.

This is then followed by coating 14970 of the carrier substrate 1360 with the colloidal lacquer KL of the crystals or diamond nanocrystals ND in order to obtain a colloidal film of colloidal lacquer KL on a surface of the carrier substrate 1360. This is done, for example, by spinning and/or spraying and/or printing a previously created colloidal varnish of the crystals or diamond nanocrystals ND.

As a rule, the colloidal lacquer KL of the crystals or diamond nano-crystals ND with the crystals or diamond nano-crystals ND contained therein is then hardened into a colloidal film in the form of sensor elements SE 14980 that it is mechanically suitable for the is sufficiently stable for further processing, but can, if necessary, be structured using other subsequent process steps. On the Verar The document presented here refers to the processing instructions for the preferred carrier material TM NOA 61 in this context.

This structuring 14990 of the colloidal film to produce the sensor elements SE is usually preferably carried out using photolithographic methods.

The preferred method that this document proposes is the structured curing of the colloidal film made of colloidal lacquer KL on the surface of the carrier substrate 1360 by selective irradiation with curing radiation 4910 with the curing wavelength λ _H , removal of the excess colloidal lacquer KL with a solvent LM and if necessary. subsequent final curing by a temperature step in a thermal chamber or a curing step by storage.

Figure 88

1. 1. Aufbringen 15010 des kolloidalen Films aus kolloidalem Lack KL auf die Oberfläche des Trägersubstrats 1360;
2. 2. Anhärten 15020 des kolloidalen Films aus kolloidalem Lack KL auf der Oberfläche des Trägersubstrats 1360;
3. 3. Aufbringen 15030 Fotolack auf die Oberfläche des kolloidalen Films aus kolloidalem Lack KL auf der Oberfläche des Trägersubstrats 1360
4. 4. Aushärten 15040 des Fotolacks;
5. 5. selektives Belichten 15050 des Fotolacks mit einer Maske, die gegenüber anderen Strukturen auf dem Trägersubstrats 1360 justiert ist, oder auf andere Weise ;
6. 6. Entwickeln 15060 des Fotolacks entwickeln mit Öffnung der Ätzöffnungen im Fotolack;
7. 7. ggf. Härten 15070 des Fotolackes, wobei hier die Herausforderung darin besteht, den Fotolack ausreichend zu härten und das Trägermaterial TM des kolloidalen Films im kolloidalen Lack KL auf der Oberfläche des Trägersubstrats 1360 nicht zu weit auszuhärten;
8. 8. selektives Ätzen oder Lösen 15080 des freiliegenden kolloidalen Films aus kolloidalem Lack KL auf der Oberfläche des Trägersubstrats 1360 in den Ätzöffnungen, wobei der Fotolack möglichst wenig angegriffen werden sollte (ggf. können noch andere Zwischenschichten wie z.B. Metallschichten auf den kolloidalen Film aus kolloidalem Lack KL auf dem Trägersubstrats 1360 aufgebracht und strukturiert werden.);
9. 9. selektives Entfernen 15090 des Fotolacks,
10. 10. Aushärten 15095 des stehen gebliebenen kolloidalen Films aus kolloidalem Lack KL auf der Oberfläche des Trägersubstrats 1360, um die Sensorelemente SE und/oder Sensorelementschichten 5 zu erhalten.)

88 shows a second method of structuring. This second method of structuring can be done by pre-hardening the colloidal film made of colloidal lacquer KL on the surface of the carrier substrate 1360. The not completely cured colloidal film made of colloidal lacquer KL can then be applied to the surface of the carrier substrate 1360 using photolithographic methods. Such a photolithographic method can look like this:

1. 1. Applying 15010 the colloidal film made of colloidal lacquer KL onto the surface of the carrier substrate 1360;
2. 2. Hardening 15020 of the colloidal film made of colloidal lacquer KL on the surface of the carrier substrate 1360;
3. 3. Apply 15030 photoresist to the surface of the colloidal film made of colloidal resist KL on the surface of the carrier substrate 1360
4. 4. Curing 15040 of the photoresist;
5. 5. selectively exposing 15050 the photoresist with a mask that is adjusted relative to other structures on the carrier substrate 1360, or in another manner;
6. 6. Develop 15060 of the photoresist with opening of the etching openings in the photoresist;
7. 7. if necessary, hardening 15070 of the photoresist, whereby the challenge here is to harden the photoresist sufficiently and not to harden the carrier material TM of the colloidal film in the colloidal lacquer KL on the surface of the carrier substrate 1360 too far;
8. 8. selective etching or dissolving 15080 of the exposed colloidal film of colloidal lacquer KL on the surface of the carrier substrate 1360 in the etching openings, whereby the photoresist should be attacked as little as possible (if necessary, other intermediate layers such as metal layers can be applied to the colloidal film of colloidal lacquer KL can be applied and structured on the carrier substrate 1360.);
9. 9. selective removal 15090 of the photoresist,
10. 10. Hardening 15095 of the remaining colloidal film made of colloidal lacquer KL on the surface of the carrier substrate 1360 in order to obtain the sensor elements SE and/or sensor element layers 5.)

Such a structuring process is not self-adjusting and is therefore subject to greater manufacturing fluctuations than the self-adjusting manufacturing process

Such structuring 14990 is not absolutely necessary. In some applications it may be sufficient to apply the colloidal lacquer KL of the crystals or diamond nano-crystals ND using one of the said coating processes, i.e. carry out the lacquering 14970 and then apply the colloidal lacquer KL of the crystals or diamond nano-crystals ND directly to harden completely 14910. Structuring 14990 is, in addition to the photolithographic processes mentioned, also conceivable using micromechanical processes (scratching, milling). Excimer lasers and particle beams such as electrons and/or ion beams can also be used for structuring. Either the carrier material TM of the colloidal lacquer KL or the resulting colloidal film is itself a photoresist material and thus the colloidal lacquer is a photoresist or the photoresist is applied to the colloidal lacquer KL as an overlying layer. In the latter case, the photoresist should be chosen so that it is selectively separated from the colloidal resist KL or colloidal film can be structured and the colloidal resist KL or the colloidal film can be selectively structured by the photoresist.

However, a variant of the colloidal lacquer KL with a photosensitive carrier material TM, for example a suitable photosensitive polyimide and/or NOA 61, is preferred.

The preferably photolithographic or micromechanical structuring 14990 of the colloidal lacquer KL to form the colloidal film with the sensor elements SE and/or the sensor element layer 5 then takes place.

After the structuring 14990, the final hardening 14911 of the colloidal film and thus the sensor elements SE and/or the sensor element layers 5 typically takes place.

By means of the proposed method, it is therefore possible to specifically place any crystals and/or diamond nanocrystals ND on a carrier substrate 1360, in particular a circuit board and/or a wafer, in particular on a CMOS wafer or BICMOS wafer or bipolar wafer or a planar glass or plastic wafer, to be placed in a localized manner and, if desired, to be placed in a self-adjusting manner.

Figure 89

89 shows schematically and roughly simplified a section through an exemplary system in order to clarify the content of the previous proposal when applied to a microelectronic CMOS circuit. The basis of the exemplary device is the carrier substrate 1360. In the example, this should be the case 89 For example, for clarification, a piece of silicon wafer (generally referred to as chip or die) with a p-type conductivity, as used in MOS and CMOS and BICMOS and bipolar technology today is common. The explanations here can of course also be transferred to bipolar technology.

Integrated formwork as a carrier substrate 1360

Before introducing the crystals and/or diamond nanocrystals ND with paramagnetic centers and/or NV centers, a MOS or CMOS or BICMOS or a bipolar process and/or another semiconductor process was used as an example exemplary carrier substrate 1360, here the exemplary silicon wafer. In this case, an exemplary microelectronic circuit with at least one microelectronic component was produced on the exemplary silicon wafer and thus on the exemplary carrier substrate 1360. This manufacturing step turned it into a MOS wafer or a CMOS wafer or a BICMOS wafer or a bipolar wafer. A single exemplary MOS transistor is symbolically indicated in a simplified schematic form for such a microelectronic circuit. The 89 omits a more complex circuit representation in order to maintain clarity. An expert person can read a large number of possible components and circuits here. For example, you can also imagine a bipolar transistor or similar components such as thyristors and the like. This simplified presentation is intended to ensure that the basic principle is clear without confusing details. The simplified representation is intended to express the co-integration of a microelectronic circuit with the crystal and/or diamond nanocrystals ND with the paramagnetic centers and/or in particular NV centers. Unfortunately, functionality cannot be shown here due to the complexity of the representation required, but this does not reduce the disclosure content.

Example MOS transistor

In this example, the MOS transistor shown as an example includes an N-well NW in the carrier substrate 1360. The exemplary MOS transistor indicated has a source region Sr, a drain region Dr, and a source contact SrK for contacting the source region Sr, a drain contact DrK for contacting the drain region Dr, a gate oxide GOX, a field oxide FOX, a cover oxide AOX and a gate GA. Above these microelectronic components is the metallization stack of the micro-integrated circuit. The metallization stack of the micro-integrated circuit preferably comprises a plurality of structured insulation layers and a plurality of structured electrically conductive layers, in particular metallization layers, which produce the electrical connections. A metallization layer is indicated, for example, by a second electrically insulated and structured second metal layer M2L. In reality, the MOS, CMOS, BICMOS and bipolar structures are significantly complex adorned. They typically include, for example, several layers of electrically conductive metal and/or polycrystalline silicon and typically several insulation layers, for example of SiO ₂ and contacts and plated-through holes.

The second optical waveguide LWL2 couples the light-emitting area LG of the mesa structure MESA, which forms the light source LED of the sensor system, to the sensor element Se, which is located here in the micromechanical recess of the second capture structure FS2 and which again contains crystals and/or diamonds. Nano-crystals ND with paramagnetic centers and/or NV centers. The second lower metal cover uMS2 of the second optical waveguide LWL2 shields the second optical waveguide LWL2 downwards from the carrier substrate 1360 as an optical shield ME. The second upper metal cover oMS2 of the second optical waveguide LWL2 shields the second optical waveguide LWL2 upwards to the surface of the carrier substrate 1360 as an optical shield ME. The second optical waveguide LWL2 detects the pump radiation LB of the light-generating area LG in its function as a light source LED and transports the pump radiation LB to the sensor element SE. This optical transport path preferably comprises an optical filter (short pass) 4, which is inserted into the second optical waveguide LWL2 and which does not transmit electromagnetic waves that do not have the pump radiation wavelength λ _pmp and only transmits electromagnetic radiation with the pump radiation wavelength λ _pmp .

The first optical waveguide LWL1 detects the fluorescence radiation FL of the paramagnetic centers and/or NV centers of the sensor element SE and transports the fluorescence radiation FL to the photodetector PD. The photodetector PD is in the example 89 exemplified as a PN junction between a p-doped region pG and an n-doped region nG. The photodetector PD can also be other photodetectors such as CCD detectors. A filter F1 is inserted into the first optical waveguide LWL1, which essentially only transmits electromagnetic radiation of the fluorescence wavelength λ _fl of the fluorescence radiation FL and which preferably essentially transmits electromagnetic radiation a wavelength different from the fluorescence wavelength λ _fl of the fluorescence radiation FL is absorbed or reflected. This ensures that, for example, the pump radiation LB with the pump radiation wavelength λ _pmp cannot reach the photodetector PD. The first lower metal cover uMS1 of the first optical waveguide LWL1 shields the first optical waveguide LWL1 downwards from the carrier substrate 1360 as an optical shield ME. The first upper metal cover oMS1 of the first optical waveguide LWL1 shields the first optical waveguide LWL1 upwards to the surface of the carrier substrate 1360 as an optical shield ME.

• die Auswertevorrichtung (AWV, 30), Steuervorrichtungen (CTR, CTR2, 33), Datenbusse (DB, 29), Treiberstufen DRVL, Signalgeneratoren (G1, G1_1, G1_2, G1_3, G2, G2_I, G2_II, G2_III, G2_IV), Magnetfelderzeugungsmittel (Lc, Lc_3, L_c_2, Lc_3, L_c_4, Lc_5), Magnetfeldregler LCTR, Lichtquellentreiber (LDRV, LDRV_1, LDRV_2, LDRV_3, LDRV_4, LDRV_5), Lichtquellen (LED, LED_1, LED_2, LED_3, LED_4, LED_5, 2), Mehrfachkorrelatoren (LIV, LIV_1, LIV_2, LIV_3, LIV_4, LIV_5), Multiplizierer (M1, M2), Mustererkennungsvorrichtung MEV, Mischer MIX, Magnetfeldsensoren MS, Mikrowellensignalquellen (µWG, µWG_I, µWG_II, µWG_III, µWG_IV), Speicher (RAM, NVM), Fotodetektoren (PD, PD_1, PD_2, PD_3, PD_4, PD_5), Radiowellenquellen RFG, Verstärker (V1, V1_1, V1_2, V1_3, V1_4, V1_5), Lichtsensorarrays 1, Auswertelektronik 15, Aufbereitungsvorrichtungen 30, Schnittstellenschaltungen 36, etc.

Preferably, the microelectronic circuit on and/or in the carrier substrate 1360 comprises device parts from systems presented here, such as those of 69 to 71 and/or those of 73 to 81 . Such device parts, which may include the microelectronic circuit on and/or in the carrier substrate 1360, may include, for example:

• the evaluation device (AWV, 30), control devices (CTR, CTR2, 33), data buses (DB, 29), driver stages DRVL, signal generators (G1, G1_1, G1_2, G1_3, G2, G2_I, G2_II, G2_III, G2_IV), magnetic field generating means ( Lc, Lc_3, L _c _2, Lc_3, L _c _4, Lc_5), magnetic field controller LCTR, light source drivers (LDRV, LDRV_1, LDRV_2, LDRV_3, LDRV_4, LDRV_5), light sources (LED, LED_1, LED_2, LED_3, LED_4, LED_5, 2 ), multiple correlators (LIV, LIV_1, LIV_2, LIV_3, LIV_4, LIV_5), multipliers (M1, M2), pattern recognition device MEV, mixer MIX, magnetic field sensors MS, microwave signal sources (µWG, µWG_I, µWG_II, µWG_III, µWG_IV), memory (RAM, NVM), photodetectors (PD, PD_1, PD_2, PD_3, PD_4, PD_5), radio wave sources RFG, amplifiers (V1, V1_1, V1_2, V1_3, V1_4, V1_5), light sensor arrays 1, evaluation electronics 15, processing devices 30, interface circuits 36, etc.

Preferably, the microelectronic circuit also includes, for example, a voltage regulator for supplying the microelectronic circuit and possibly its subcomponents and/or for supplying a pump light source, the light source LED, for stimulating the emission of the fluorescent radiation FL of the paramagnetic centers of the crystals and/or the diamond nano -Crystals ND of the sensor elements SE and/or the sensor element layers 5 using pump radiation LB. However, a suitable micro-optical system must, on the one hand, be able to stimulate the paramagnetic centers of the crystals and/or the diamond nanocrystals ND of the sensor elements SE and/or the sensor element layers 5 by means of pump radiation LB and, on the other hand, the fluorescence radiation FL of the paramagnetic centers of the crystals and/or or the diamond nanocrystals ND of the sensor elements SE and / or the sensor element layers 5 can be detected and reliably separated from the pump radiation LB of the pump radiation source, here the light source LED. For this purpose, it makes sense if the micro-electro-optical system has micro-optical components that are in can be manufactured microtechnically in a corresponding process step. Optical filters (F1, 3) and optical fibers (LWL1, LWL2) are particularly important here.

At this point, the document presented here refers as an example to the books Baha E.A. Saleh, Malvin Carl Teich, “Fundamentals of Photonics” Wiley-VCH, 2007 and Bernhard C. Kress, Patrick Meyreueis “Applied Digital Optics” Wiley, 2009.

In addition, the document presented here refers to other descriptive parts of this document, which also deal with microelectronic systems and / or circuits and which therefore also provide important information about this section in this context, which is also disclosed here in combination with the technical teachers of this section .

The document presented here therefore refers to the relevant state of the art on microelectronic circuits.

first micro-optical fiber optic cable LWL1 and sensor element SE

The illustrative structure of the device 89 includes exemplary micro-optical components in the form of exemplary optical fibers (LWL1, LWL2). These exemplary optical fibers (LWL1, LWL2) should be used in the illustrative example 89 interact with the multitude of paramagnetic centers in the multitude of crystals and/or diamond nanocrystals ND with NV centers and/or paramagnetic centers. The diamond nanocrystals ND can preferably be nanodiamonds with NV centers as paramagnetic centers. The colloidal lacquer KL with carrier material TM and crystals and/or diamond nanocrystals ND has been placed in the recess of the second capture structure FS2. The colloidal lacquer KL covers the surface of the device in the area of the capture structure FS2 in order to fix the position of the crystals and/or diamond nanocrystals ND in the recess of the second capture structure FS2. After curing, the carrier material TM of the colloidal lacquer KL must be sufficiently transparent for the pump radiation LB to be used and the fluorescent radiation FL used for the paramagnetic centers of the crystals and/or diamond nanocrystals ND. The second capture structure FS2 is preferably filled with the carrier material TM of the colloidal lacquer KL. The layer of the colloidal lacquer KL made of carrier material TM and crystals and/or diamond nano-crystals ND is in the example 89 photolithographically and/or by a self-adjusting curing process limited to the area of the catch structure FS2. This has the advantage that, for example, electrical contacts of the integrated circuit can preferably be exposed again more easily.

The exemplary device, which is described here for clarification, has a first optical waveguide structure LWL1, the material of which can include, for example, a sputtered-on SiO ₂ material or the material of another transparent oxide and/or an optically transparent insulation layer of the metallization stack, which is applied to the surface of the carrier substrate 1360 was applied. Preferably, light emission into other areas of the circuit was previously prevented by a first section of a first metal shutter uMS1 downwards towards the carrier substrate 1360. The first optical waveguide structure LWL1 was preferably structured photolithographically and, for example, covered upwards with a first section of a second metal shutter oMS1 to reduce optical crosstalk and to improve the signal-to-noise ratio. It is recommended to precisely simulate the workability of such a design using an FDTD simulation before production for the process parameters used, since, for example, light propagation is no longer possible if the dimensions are too small. In the same way, a second optical waveguide structure LWL2 was manufactured, which is preferably surrounded by a second section of the first metal diaphragm uMS2 and a second section of the second metal diaphragm oMS2.

MESA structure as a light source

• Röcke H., Meijer J., Stephan A., Weidenmüller U., Bukow H. H., Rolfs C. „White electroluminescent nanostructure in silicon fabricated using focused ion implantation“ Nuclear Instruments and Methods in Physics Research B 181 (1001) Seite 274-279 .

In the example of the 89 an exemplary light source is provided. Here, for example, this consists of an exemplary MESA structure (LED), which is preferably and exemplarily insulated from the planar substrate. Instead of a MESA structure MESA, other silicon LEDs or other light sources can also be used as the LED light source of the device. In this light-generating MESA structure MESA, a light-emitting region is typically manufactured as a light source LED. In this context, reference is made to the following document regarding the production of an LED light source in indirect semiconductors such as silicon:

• Röcke H., Meijer J., Stephan A., Weidenmüller U., Bukow HH, Rolfs C. “White electroluminescent nanostructure in silicon fabricated using focused ion implantation” Nuclear Instruments and Methods in Physics Research B 181 (1001) pages 274-279 .

The special thing about using a MESA structure MESA is that it emits a wavelength range in the necessary wavelength range of the pump radiation wavelength λ _pmp of the pump radiation LB. Unfortunately, the MESA structure MESA also emits other wavelengths, so the use of an optical bandpass filter 4 appears necessary.

90 shows the exemplary emission spectrum of such a MESA structure MESA as an LED light source. Experiments have shown that the optical bandpass filter 4 should be inserted into the second optical waveguide LWL2 in order to increase the optical transmission in the direction of the crystals and/or the diamond nanocrystals ND with the paramagnetic centers or NV centers on the pump radiation LB to limit the pump radiation wavelength λ _pmp and not to transmit electromagnetic radiation from the light source LED with shorter and longer wavelengths.

If a light source LED is used, which essentially only emits electromagnetic radiation of the pump radiation wavelength λ _pmp , the optical bandpass filter 4 can be dispensed with.

In the example of the 89 Such a light source LED with the light-emitting region LG is used to pump the paramagnetic centers or NV centers of the crystals and/or diamond nanocrystals ND via the first optical waveguide LWL1 after bandpass filtering in the optical bandpass filter 4 and to emit fluorescent radiation to stimulate FL.

By way of example, an optical bandpass filter 4 is inserted into the first optical waveguide LWL1, which essentially allows electromagnetic radiation with pump radiation wavelength λ _pmp to pass through and essentially attenuates electromagnetic radiation of other wavelengths, in particular the fluorescent radiation wavelength λ _fl , to the extent that they no longer play a role for the respective application .

Second optical fiber LWL2 and photodetector PD

In the example, the second optical fiber LWL2 captures the 89 the fluorescence radiation FL and directs it to a photodetector PD of the microelectronic circuit.

By way of example, an optical filter F1 is inserted into the second optical waveguide LWL2, which essentially allows electromagnetic radiation with fluorescent radiation wavelength λ _fl to pass through and essentially attenuates electromagnetic radiation of other wavelengths, in particular the pump radiation wavelength λ _pmp , to such an extent that they no longer play a role for the respective application .

The optical filter F1 and the optical bandpass filter 4 are preferably designed as micro-optical functional elements, for example as a dielectric layer sequence and/or as a photonic crystal. The document presented here recommends FDTD simulations to check the selected designs, whereby the manufacturing tolerances should definitely be simulated.

In this illustrative example, the exemplary photodetector PD includes the 89 For example, a PN diode that includes an N-well nG and a P-cathode pG.

microtechnical functional elements

Numerous light-sensitive microelectronic components are known from the prior art, which can be manufactured in particular with the aforementioned MOS, CMOS, BICMOS and bipolar processes. In order to keep the complexity of the representation low and transparent 89 simplified to such an extent that an expert person can recognize which exemplary elements can be combined and how and can work together in an exemplary manner. The numerous microfluidic, micromechanical, micro-optical and microelectronic functional elements known from the prior art can also be combined in similar devices using the method proposed here. For example, Bragg filters and mirror structures can be provided in the optical fibers (LWL1, LWL2).

microtechnical device and waveguide

In contrast to the prior art, the proposal presented here envisages placing a waveguide (1380, 1880, 2380, 6830, 6980), here an exemplary differential tri-plate line 6980, above or, as here, below the sensor element SE. The differential tri-plate line 6980 again includes the electrically conductive rear contact 1370, the electrically conductive left signal ground surface 1310, the electrically conductive right signal ground surface 1320 and the differential signal line 6830 with that of the electrically conductive left signal line 6810 and that of the electrically conductive right signal line 6820 .The 6980 differential tri-plate line is just one example of a waveguide. The exemplary micro-integrated circuit of the 89 can instead also have a microstrip line 1380 and/or a slot line 1880 and/or a tri-plate line 2380 and/or a differential microstrip line 6830 and/or another waveline, in particular a planar waveline, which is provided with a sensor element SE and/or or a sensor element layer 5 interact. In the preceding figures, various positionings of various sensor elements SE relative to device parts of wave lines were discussed. Such a micro-integrated circuit can have one or more sensor elements SE, which can be positioned differently to the device parts of said wave lines and which can have different sizes relative to the device parts of the wave lines. These different sizes of the sensor elements SE were also discussed in the previous descriptions of the figures and are therefore not repeated here. However, they are hereby deemed to be disclosed in connection with their use in micro-integrated circuits in the sense of the document presented here.

microelectronic system

The system therefore preferably comprises a microelectronic circuit or at least one microelectronic component, in particular a photodetector PD and/or a light-emitting component as a light source LED. More specifically, the system preferably comprises a microelectronic MOS, CMOS, BICMOS or bipolar circuit or at least a microelectronic MOS or CMOS or. BICMOS or bipolar component, in particular a photodetector and/or a light-emitting component. In the case of CMOS technology, it is preferably a CMOS photodetector, e.g. a CCD pixel or a CCD pixel array and/or a light-emitting CMOS component, a CMOS component being characterized in that it is in a CMOS technology was manufactured. The microelectronic circuit is preferably manufactured at least in parts using MOS or CMOS or BICMOS or bipolar technology.

• • Analog-Digital-Wandler (ADC): Wandelt analoge Eingangssignale in digitale Signale um.
• • Digital-Analog-Wandler (DAC): Wandelt digitale Eingangssignale in analoge Signale um.
• • Operationsverstärker (OPV): Verstärkt und verstärkt analoge Signale.
• • Spannungsreferenzen: Erzeugen stabile Referenzspannungen für den Schaltungsbetrieb.
• • Verstärker: Verstärkt analoge Signale mit unterschiedlichen Verstärkungsfaktoren.
• • Filter: Filtert unerwünschte Frequenzen aus einem Signal (z. B. Tiefpass-, Hochpass- oder Bandpassfilter).
• • Oszillatoren: Erzeugt periodische Wellenformen oder Taktsignale.
• • Multiplexer (MUX) und Demultiplexer (DEMUX): Schalten zwischen verschiedenen Eingangssignalen oder verteilen ein Eingangssignal auf mehrere Ausgänge.
• • Phasenregelkreise (PLL): Generiert stabilisierte Taktsignale basierend auf einem Referenztakt.
• • Verzögerungselemente: Ermöglichen die zeitliche Steuerung von Signalen.
• • Komparatoren: Vergleicht zwei Eingangssignale und gibt einen Ausgang entsprechend dem Vergleichsergebnis.
• • Pufferverstärker: Verstärkt das Signal, ohne seine Charakteristik zu verändern.
• • Spannungsregler: Stabilisiert die Ausgangsspannung, unabhängig von Schwankungen der Eingangsspannung oder Laständerungen.
• • Taktgeneratoren: Erzeugt Taktsignale mit definierten Frequenzen und Phasenverschiebungen.
• • Datenpuffer: Speichert Daten und ermöglicht eine zeitversetzte Übertragung.
• • Schaltungsüberwachung: Überwacht die Betriebsbedingungen der Schaltung und schützt sie vor Schäden.
• • Serielle Kommunikationsschnittstellen: Ermöglichen die Kommunikation zwischen verschiedenen Bauteilen oder Geräten über serielle Datenübertragung.
• • Leistungstreiber: Verstärken das Signal für den Antrieb von Hochleistungskomponenten wie Motoren oder Aktuatoren.
• • Schaltungslogik: Enthält logische Elemente wie AND-, OR-, NAND- und XOR-Gatter zur Durchführung von digitalen Berechnungen und Logikoperationen.
• • Speicher: Umfasst verschiedene Arten von Speicherbausteinen wie Flip-Flops, Latches oder Register zum Speichern von Daten.
• • Takt- und Phasenregelschleifen (PLL): Generiert präzise und stabile Taktsignale basierend auf einem Referenztakt und ermöglicht die Synchronisation von Signalen.
• • Analogschalter: Schaltet analoge Signale zwischen verschiedenen Pfaden oder Kanälen um.
• • Impulsbreitenmodulation (PWM): Moduliert die Breite von Impulsen, um die Leistung oder das Verhältnis von Einschaltzeit zu Ausschaltzeit eines Signals zu steuern.
• • Signalverarbeitungseinheiten (DSP): Spezialisierte digitale Signalprozessoren für die Verarbeitung und Analyse von analogen und digitalen Signalen.
• • Spannungsteiler: Teilt eine Eingangsspannung in zwei oder mehrere Ausgangsspannungen auf.
• • Temperatursensoren: Erfassen und messen die Temperatur in der Umgebung oder in einem Bauteil.
• • Stromquellen und Stromsenken: Erzeugen konstanten Strom oder absorbieren Strom in einer Schaltung.
• • Schutzschaltungen: Überwachen und schützen die Schaltung vor Überspannung, Unterspannung, Übertemperatur oder Kurzschluss.
• • Pegelwandler: Übersetzt Signale zwischen verschiedenen Spannungsebenen oder Logikpegeln.
• • Impedanzwandler: Passt die Impedanz zwischen verschiedenen Teilen einer Schaltung an, um eine optimale Signalübertragung zu ermöglichen.
• • Spannungsregler: Stabilisieren die Ausgangsspannung auf einen vordefinierten Wert, unabhängig von Schwankungen der Eingangsspannung oder Laständerungen.
• • Strommessung: Ermöglicht die Messung des Stroms in einem Schaltungsteil oder einer Komponente.
• • Digital Signaling Interface (DSI): Ein serieller Hochgeschwindigkeitsbus zur Übertragung von Daten zwischen integrierten Schaltungen.
• • Analogschleifenfilter: Filtert unerwünschte Störsignale aus einem analogen Eingangssignal.
• • Energieerfassung: Erfasst und misst den Energieverbrauch in einer Schaltung oder einem System.
• • Fehlerkorrektur: Verwendet Fehlerkorrekturcodes und Algorithmen zur Erkennung und Korrektur von Übertragungsfehlern in digitalen Signalen.
• • Datenkonverter: Wandelt Daten von einem Format in ein anderes um, z. B. seriell zu parallel oder umgekehrt.
• • Verstärker mit variabler Verstärkung: Bietet die Möglichkeit, den Verstärkungsfaktor eines Verstärkers dynamisch anzupassen.
• • Bandlückenreferenzen: Erzeugt eine stabile Referenzspannung unabhängig von Temperaturänderungen.
• • Pulsweitenmodulation (PWM): Moduliert die Pulsweite eines Signals, um analoge Informationen zu übertragen oder die Leistung von Schaltungen zu regeln.
• • Taktverteilung: Verteilt Taktsignale an verschiedene Teile einer Schaltung oder eines Systems.
• • Taktreiniger: Filtert Störungen und Rauschen aus einem Taktsignal.
• • Sensor-Schnittstellen: Integriert Schnittstellen für verschiedene Sensoren wie Temperatursensoren, Drucksensoren, Beschleunigungssensoren usw.
• • Schaltungsmodelle: Beschreibt mathematische Modelle zur Analyse und Simulation von Mixed-Signal-Schaltungen.
• • Digitale Signalverarbeitung (DSP): Verarbeitet digitale Signale durch mathematische Algorithmen wie Filterung, Spektralanalyse, Signalmodulation usw.
• • Phasendetektoren: Vergleicht die Phasenbeziehung zwischen zwei Signalen und erzeugt eine Ausgangsspannung entsprechend der Phasendifferenz.
• • Digitale Steuerlogik: Steuert die Funktionen und den Betrieb der Schaltung auf der Grundlage von digitalen Eingangssignalen.
• • Spannungsmultiplikatoren: Erzeugt eine höhere Ausgangsspannung als die Eingangsspannung durch wiederholtes Laden und Entladen von Kondensatoren.
• • Fehlererkennung und Fehlerkorrektur (ECC): Identifiziert und korrigiert Fehler in digitalen Daten durch Hinzufügen von Redundanzinformationen.
• • Programmierbare Logik: Enthält programmierbare Logikbausteine wie FPGAs (Field-Programmable Gate Arrays) oder CPLDs (Complex Programmable Logic Devices), um flexible Schaltungsfunktionalitäten zu ermöglichen.
• • Datenpuffer: Speichert Daten vorübergehend, um eine zeitliche Trennung zwischen Eingang und Ausgang zu ermöglichen.
• • Taktgenerator: Erzeugt Taktsignale mit spezifischen Frequenzen und Phasenverschiebungen.
• • Batteriemanagement: Überwacht und steuert den Ladezustand und die Leistung von Batterien.
• • Digitale Filter: Filtert unerwünschte Frequenzen oder Rauschen aus digitalen Signalen.
• • Phasenverschiebungsnetzwerke: Führt Phasenverschiebungen in einem Signal ein, um spezifische zeitliche Beziehungen zu erreichen.
• • Signalisolatoren: Trennt galvanisch Signale, um elektrische Störungen zu minimieren.
• • Impulsgeneratoren: Erzeugt Impulse oder kurze Signale für spezifische Anwendungen.
• • Spektrumanalysatoren: Analysiert und visualisiert das Frequenzspektrum eines Signals.
• • Echtzeituhr (RTC): Ermöglicht die genaue Zeitmessung und das Aufrechterhalten einer Echtzeituhr während des Stromausfalls.
• • Multipunkt-Modulation: Kombiniert mehrere digitale Signale in einem Modulationsschema.
• • Displaytreiber: Steuert die Ansteuerung von Anzeigeelementen wie LCDs oder LED-Anzeigen.
• • Hysterese-Komparatoren: Vergleicht Eingangssignale mit einer Schwelle und erzeugt eine Ausgangsspannung, die abhängig von der Hysterese ist.
• • Analogschleifenkompensatoren: Kompensiert Fehler in Rückkopplungsschleifen von Analogschaltungen, um die Stabilität und Genauigkeit zu verbessern.
• • Programmierbare Verstärker: Erlaubt die Anpassung des Verstärkungsfaktors oder der Verstärkungsfunktion über eine digitale Schnittstelle.
• • Clock-Multiplexer: Wählt zwischen verschiedenen Taktsignalen aus und leitet sie zur weiteren Verarbeitung weiter.
• • Hochspannungstreiber: Verstärkt und treibt Hochspannungssignale an, beispielsweise für die Ansteuerung von Leistungstransistoren.
• • I/O-Schnittstellen: Stellt die Kommunikation und den Datenaustausch mit externen Geräten oder Schnittstellen her.
• • Logik-Überwachung: Überwacht und steuert die Logikpegel in einer Schaltung, um eine zuverlässige Signalverarbeitung sicherzustellen.
• • Data Encoding/Decoding: Kodiert und dekodiert Daten für die effiziente Übertragung oder Speicherung.
• • Lasttreiber: Steuert die Ausgabe von Leistung an externe Komponenten oder Lasten.

The microelectronic circuit may include a variety of circuit elements, some of which may interact with the sensor element. The document presented here only lists a few as examples.

• • Analog-to-digital converter (ADC): Converts analog input signals into digital signals.
• • Digital-to-analog converter (DAC): Converts digital input signals into analog signals.
• • Operational Amplifier (OPV): Amplifies and amplifies analog signals.
• • Voltage references: Create stable reference voltages for circuit operation.
• • Amplifier: Amplifies analog signals with different gain factors.
• • Filter: Filters unwanted frequencies from a signal (e.g. low pass, high pass or band pass filter).
• • Oscillators: Generate periodic waveforms or clock signals.
• • Multiplexer (MUX) and demultiplexer (DEMUX): Switch between different input signals or distribute an input signal to several outputs.
• • Phase-Locked Loops (PLL): Generates stabilized clock signals based on a reference clock.
• • Delay elements: Allow signals to be controlled over time.
• • Comparators: Compares two input signals and gives an output according to the comparison result.
• • Buffer amplifier: Amplifies the signal without changing its characteristics.
• • Voltage regulator: Stabilizes the output voltage regardless of input voltage fluctuations or load changes.
• • Clock generators: Generates clock signals with defined frequencies and phase shifts.
• • Data buffer: Stores data and enables delayed transmission.
• • Circuit monitoring: Monitors the operating conditions of the circuit and protects it from damage.
• • Serial communication interfaces: Enable communication between different components or devices via serial data transmission.
• • Power drivers: Amplify the signal to drive high-performance components such as motors or actuators.
• • Circuit Logic: Contains logical elements such as AND, OR, NAND and XOR gates to perform digital calculations and logic operations.
• • Memory: Includes various types of memory devices such as flip-flops, latches or registers for storing data.
• • Clock and Phase Locked Loops (PLL): Generates precise and stable clock signals based on a reference clock and enables synchronization of signals.
• • Analog Switch: Switches analog signals between different paths or channels.
• • Pulse Width Modulation (PWM): Modulates the width of pulses to control the power or ratio of on-time to off-time of a signal.
• • Signal Processing Units (DSP): Specialized digital signal processors for processing and analyzing analog and digital signals.
• • Voltage divider: Divides an input voltage into two or more output voltages.
• • Temperature sensors: Record and measure the temperature in the environment or in a component.
• • Current sources and current sinks: Generate constant current or absorb current in a circuit.
• • Protection circuits: Monitor and protect the circuit from overvoltage, undervoltage, overtemperature or short circuit.
• • Level converter: Translates signals between different voltage levels or logic levels.
• • Impedance converter: Adjusts the impedance between different parts of a circuit to enable optimal signal transmission.
• • Voltage regulators: Stabilize the output voltage to a predefined value, regardless of input voltage fluctuations or load changes.
• • Current measurement: Allows you to measure the current in a circuit part or component.
• • Digital Signaling Interface (DSI): A high-speed serial bus for transferring data between integrated circuits.
• • Analog loop filter: Filters unwanted interference signals from an analog input signal.
• • Energy sensing: Captures and measures energy consumption in a circuit or system.
• • Error correction: Uses error correction codes and algorithms to detect and correct transmission errors in digital signals.
• • Data converter: Converts data from one format to another, e.g. B. serial to parallel or vice versa.
• • Variable Gain Amplifier: Provides the ability to dynamically adjust the gain of an amplifier.
• • Bandgap references: Creates a stable reference voltage independent of temperature changes.
• • Pulse width modulation (PWM): Modulates the pulse width of a signal to transmit analog information or regulate the performance of circuits.
• • Clock distribution: Distributes clock signals to different parts of a circuit or system.
• • Clock Cleaner: Filters interference and noise from a clock signal.
• • Sensor interfaces: Integrates interfaces for various sensors such as temperature sensors, pressure sensors, acceleration sensors, etc.
• • Circuit Models: Describes mathematical models for analyzing and simulating mixed-signal circuits.
• • Digital Signal Processing (DSP): Processes digital signals through mathematical algorithms such as filtering, spectral analysis, signal modulation, etc.
• • Phase detectors: Compares the phase relationship between two signals and produces an output voltage corresponding to the phase difference.
• • Digital Control Logic: Controls the functions and operation of the circuit based on digital input signals.
• • Voltage Multipliers: Produces a higher output voltage than the input voltage by repeatedly charging and discharging capacitors.
• • Error detection and correction (ECC): Identifies and corrects errors in digital data by adding redundancy information.
• • Programmable Logic: Contains programmable logic devices such as FPGAs (Field-Programmable Gate Arrays) or CPLDs (Complex Programmable Logic Devices) to enable flexible circuit functionality.
• • Data Buffer: Temporarily stores data to provide time separation between input and output.
• • Clock generator: Generates clock signals with specific frequencies and phase shifts.
• • Battery management: Monitors and controls the charge status and performance of batteries.
• • Digital Filters: Filters unwanted frequencies or noise from digital signals.
• • Phase Shift Networks: Introduces phase shifts in a signal to achieve specific temporal relationships.
• • Signal isolators: Galvanically isolates signals to minimize electrical interference.
• • Pulse Generators: Generates pulses or short signals for specific applications.
• • Spectrum Analyzers: Analyzes and visualizes the frequency spectrum of a signal.
• • Real Time Clock (RTC): Allows you to accurately measure time and maintain a real time clock during power outages.
• • Multipoint Modulation: Combines multiple digital signals in one modulation scheme.
• • Display driver: Controls the control of display elements such as LCDs or LED displays.
• • Hysteresis comparators: Compares input signals to a threshold and produces an output voltage that is dependent on the hysteresis.
• • Analog loop compensators: Compensates for errors in feedback loops of analog circuits to improve stability and accuracy.
• • Programmable Amplifiers: Allows adjustment of the gain factor or gain function via a digital interface.
• • Clock multiplexer: Selects between different clock signals and forwards them for further processing.
• • High-voltage driver: Amplifies and drives high-voltage signals, for example for driving power transistors.
• • I/O interfaces: Establishes communication and data exchange with external devices or interfaces.
• • Logic Monitoring: Monitors and controls logic levels in a circuit to ensure reliable signal processing.
• • Data Encoding/Decoding: Encodes and decodes data for efficient transmission or storage.
• • Load Driver: Controls the output of power to external components or loads.

• die Auswertevorrichtung (AWV, 30), Steuervorrichtungen (CTR, CTR2, 33), Datenbusse (DB, 29), Treiberstufen DRVL, Signalgeneratoren (G1, G1_1, G1_2, G1_3, G2, G2_I, G2_II, G2_III, G2_IV), Magnetfelderzeugungsmittel (Lc, Lc_3, Lc_2, Lc_3, Lc_4, Lc_5), Magnetfeldregler LCTR, Lichtquellentreiber (LDRV, LDRV_1, LDRV_2, LDRV_3, LDRV_4, LDRV_5), Lichtquellen (LED, LED_1, LED_2, LED_3, LED_4, LED_5, 2), Mehrfachkorrelatoren (LIV, LIV_1, LIV_2, LIV_3, LIV_4, LIV_5), Multiplizierer (M1, M2), Mustererkennungsvorrichtung MEV, Mischer MIX, Magnetfeldsensoren MS, Mikrowellensignalquellen (µWG, µWG_I, µWG_II, µWG_III, µWG_IV), Speicher (RAM, NVM), Fotodetektoren (PD, PD_1, PD_2, PD_3, PD_4, PD_5), Radiowellenquellen RFG, Verstärker (V1, V1_1, V1_2, V1_3, V1_4, V1_5), Lichtsensorarrays 1, Auswertelektronik 15, Aufbereitungsvorrichtungen 30, Schnittstellenschaltungen 36, etc.

Preferably, the microelectronic circuit on and/or in the carrier substrate 1360 comprises device parts from systems presented here, such as those of 69 to 71 and/or those of 73 to 81 . Such device parts, which may include the microelectronic circuit on and/or in the carrier substrate 1360, may include, for example:

• the evaluation device (AWV, 30), control devices (CTR, CTR2, 33), data buses (DB, 29), driver stages DRVL, signal generators (G1, G1_1, G1_2, G1_3, G2, G2_I, G2_II, G2_III, G2_IV), magnetic field generating means ( Lc, Lc_3, Lc_2, Lc_3, Lc_4, Lc_5), magnetic field controller LCTR, light source drivers (LDRV, LDRV_1, LDRV_2, LDRV_3, LDRV_4, LDRV_5), light sources (LED, LED_1, LED_2, LED_3, LED_4, LED_5, 2), multiple correlators ( LIV, LIV_1, LIV_2, LIV_3, LIV_4, LIV_5), multiplier (M1, M2), pattern recognition device MEV, mixer MIX, magnetic field sensors MS, microwave signal sources (µWG, µWG_I, µWG_II, µWG_III, µWG_IV), memory (RAM, NVM), photodetectors (PD, PD_1, PD_2, PD_3, PD_4, PD_5), radio wave sources RFG, amplifiers (V1, V1_1, V1_2, V1_3, V1_4, V1_5), light sensor arrays 1, evaluation electronics 15, processing devices 30, interface circuits 36, etc.

Preferably, the microelectronic circuit also includes, for example, a voltage regulator for supplying the microelectronic circuit and possibly its subcomponents and/or for supplying a pump light source, the light source LED, for stimulating the emission of the fluorescent radiation FL of the paramagnetic centers of the crystals and/or the diamond nano -Crystals ND of the sensor elements SE and/or the sensor element layers 5 using pump radiation LB. However, a suitable micro-optical system must, on the one hand, be able to stimulate the paramagnetic centers of the crystals and/or the diamond nanocrystals ND of the sensor elements SE and/or the sensor element layers 5 by means of pump radiation LB and, on the other hand, the fluorescence radiation FL of the paramagnetic centers of the crystals and/or or the diamond nanocrystals ND of the sensor elements SE and / or the sensor element layers 5 can be detected and reliably separated from the pump radiation LB of the pump radiation source, here the light source LED. For this purpose, it makes sense if the micro-electro-optical system has micro-optical components that are micro-manufactured in a corresponding process step. Optical filters (F1, 3) and optical fibers (LWL1, LWL2) are particularly important here.

At this point, the document presented here refers as an example to the books Baha E.A. Saleh, Malvin Carl Teich, “Fundamentals of Photonics” Wiley-VCH, 2007 and Bernhard C. Kress, Patrick Meyreueis “Applied Digital Optics” Wiley, 2009.

The proposed method therefore preferably comprises a step for carrying out a method for producing micro-optical components on the semiconductor substrate.

For co-integration of suitable light-emitting components

• Burchard B., „Elektronische und optoelektronische Bauelemente und Bauelementstrukturen auf Diamantbasis“ Dissertation, Hagen 1994.

As already indicated, light-emitting components in standard silicon technologies for producing microelectronic circuits pose a particular problem. Either a material made of a semiconductor with a direct transition, such as GaAs or another suitable III/V material, is used as the semiconductor substrate. used, whereby the light-emitting components (light sources LED) for the generation of the pump radiation LB for the excitation of the fluorescence radiation FL of the paramagnetic centers of the crystals and / or the diamond nano-crystals ND of the sensor elements SE and / or the sensor element layers 5 directly on the wafer can be manufactured, or a material made of a semiconductor with an indirect transition, such as silicon or diamond, is used as the semiconductor substrate. With regard to the production of LED light sources in diamond, the document presented here refers to the following document as an example:

• Burchard B., “Electronic and optoelectronic components and component structures based on diamond” dissertation, Hagen 1994.

• Röcken H., Meijer J., Stephan A., Weidenmüller U., Bukow H.H., Rolfs C., „White electroluminescent nanostructure in silicon fabricated using focused ion implantation“ Nuclear Instruments and Methods in Physics Research B 181 (1001) Seite 274-279 .

With regard to the production of LED light sources in silicon, the document presented here once again refers, as an example, to the following magazine article already mentioned:

• Röcken H., Meijer J., Stephan A., Weidenmüller U., Bukow HH, Rolfs C., “White electroluminescent nanostructure in silicon fabricated using focused ion implantation” Nuclear Instruments and Methods in Physics Research B 181 (1001) Page 274- 279 .

This document deals with a PNP or NPN MESA structure MESA in which the average doping is extremely high and very narrow. The authors of the document are of the opinion that this is a component in the avalanche breakthrough. The light energy is emitted by the hot electrons in the form of a thermal spectrum. In the case of an NPN structure, the microelectronic circuit applies a relatively high voltage between the contact of the first N region and the contact of the second N region. A breakthrough occurs. By breaking the base-collector path, a current is injected into the base. The extremely highly doped and very narrow base switches on, so that the transistor suddenly switches on extremely quickly. The parts of the base-collector capacitance near the PN junction are suddenly discharged. This results in an electromagnetic wave in the base, which is focused by the high doping and the resulting jump in refractive index. If a “+” is to symbolize high doping, the use of a PN+P structure or an NP+N structure is suggested here. In particular, so-called silicon avalance-based light-emitting diodes are known from the literature, which do a similar job, but typically emit in the infrared wavelength range. (K. Kurokawa, “Avalanche Breakdown Electroluminescence in Silicon Carbide Light Emitting Diodes,” January 2000Materials Science Forum 338-342:691-694, DOI: 10.4028/www.scientific.net/MSF.338-342.691) So these come as pump radiation sources not in question.

Based on such a PN+P structure or an NP+N structure or such a silicon avalance-based light-emitting diode, a quantum technological, micro-electro-optical or photonic or microelectronic system in MOS, CMOS , BICMOS or bipolar technology, or another suitable wafer manufacturing technology. The system in question then comprises a carrier substrate 1360, which can be made in particular from an indirect semiconductor such as silicon and has a surface OF. Preferably, the carrier substrate 1360 for light generation has a silicon avalance-based light-emitting diode or a PN+P structure or an NP+N structure or a semiconducting MESA structure (MESA). This silicon avalance-based light-emitting diode, PN+P structure, NP+N structure or semiconducting MESA structure (MESA) MESA serves here as a light-emitting microelectronic component, which can be used, for example, as a pump light source, here the light source LED, can be used to excite a paramagnetic center. The MESA structure MESA is preferably isolated from the substrate and has a first region (E) of the MESA structure (MESA), a second region (B) of the MESA structure (MESA) and a third region (C) of the MESA structure (MESA). The quantum technological, micro-electro-optical or photonic or microelectronic system has a plurality of crystals and/or diamond nano-crystals ND with at least a large number of preferably identical paramagnetic centers, in particular NV centers. At least one micro-optical functional element, in particular an optical waveguide LWL2, which is manufactured in the carrier substrate 1360 or on the surface OF of the carrier substrate 1360, preferably couples said light-emitting components in or on the carrier substrate 1360 with one or more paramagnetic centers, so that they are pumped or can be optically manipulated in some other way. An optical bandpass filter 4 is preferably integrated into the micro-optical functional element, in particular the second optical waveguide LWL2, which preferably essentially transmits the pump radiation LB with pump radiation wavelength λ _pmp . In the sense of the document presented here, the carrier substrate 1360 then comprises the micro-optical functional element, here the second optical waveguide LWL2. In this case, the second optical waveguide LWL2 is preferably firmly connected to the substrate 1360 in its longitudinal extent in whole or in large parts. The first area (E) and the third area (C) of the MESA structure MESA, if used, preferably have a first conductivity type. The second region (B) of the MESA structure MESA, if used, preferably has a second conductivity type that is different from the first conductivity type and the second region (B) is arranged between the first region (E) and the second region (C). . The MESA structure (MESA) MESA is preferably a PNP or NPN MESA structure MESA, with the width of the second region (B) preferably being less than 3µm and/or less than 1µm and/or less than 500nm and/or smaller than 200nm and/or smaller than 100nm and/or smaller than 50nm and/or smaller than 25nm and/or smaller than 10nm. If the doping is sufficiently high, the second region (B) is then suitable for emitting light when a sufficiently high electrical voltage is applied. An example spectrum shows 90 . A coupling with an optical functional element then documents that the MESA structure MESA is intended to emit light.

The light emitted by the second region (B) then interacts with paramagnetic centers of the crystals and/or the diamond nanocrystals ND of the sensor element SE and/or the sensor element layer 5 by means of said micro-optical functional element, here the second optical waveguide LWL2.

The carrier substrate 1360 is preferably a semiconductor substrate or a silicon wafer or a GaAs wafer or a wafer made of a III/V material or a wafer made of II/VI material or a wafer treated using band gap engineering or a diamond Wafer or a Ge wafer or another wafer made of a mixed semiconductor or a part of such a wafer.

This disclosure therefore proposes a quantum technological, micro-electro-optical or photonic system that includes a carrier substrate 1360, in particular a semiconductor substrate. The special thing about the proposal here is that the entire system, with the exception of the crystals and/or diamond nano-crystals ND, can be made from an indirect semiconductor material. A microelectronic circuit is typically manufactured in and/or on the semiconductor material, preferably using MOS, CMOS, BICMOS, or bipolar technology. The microelectronic circuit preferably comprises a plurality of components such as transistors, diodes, resistors, capacitors, light-sensitive and possibly light-emitting electronic components. Such a light-sensitive component, for example a photodetector PD, of the said microelectronic circuit, for example for detecting the intensity I _{, is} the fluorescence radiation FL of the paramagnetic centers of the crystals and/or the diamond nanocrystals ND, which is preferably a diamond and NV center include, for example, a PN diode as a light-sensitive electrical component, as a photodetector PD, which is part of the microelectric circuit. A light-emitting component can be, for example, a MESA structure MESA, as described here. The quantum technological, micro-electro-optical or photonic system preferably comprises a portion of a colloidal film or colloidal lacquer KL as a sensor element SE and/or sensor element layer 5, which has a plurality of crystals and/or diamond nanocrystals ND with paramagnetic centers. Very particularly preferred is a variant in which the carrier substrate 1360 is a microelectronic circuit, in particular a microelectronic circuit in MOS, CMOS, BICMOS, or bipolar technology. Typically, the carrier substrate 1360 then comprises materials such as pieces of circuit board materials or pieces of plastic plates or foils and/or pieces of glass wafers or pieces of ceramic wafers and/or pieces of semiconductor wafers, for example pieces of CMOS wafers or for example Pieces of BiCMOS wafers and/or, for example, pieces of wafers from a bipolar technology and/or pieces of a wafer made from a III/V material or the like and/or, for example, pieces of MEMS wafers and/or pieces of microelectronic circuits and/or for example pieces of MEOS wafers (MEOS = micro electro optical system) and/or for example pieces of MOEMS wafers etc. and/or pieces of MOEMS wafers, microelectronic circuits and microelectronic functional elements and/or micro-optical functional elements and/or micromechanical functional elements and/ or microfluidic functional elements.

Such a microelectronic circuit, which is typically manufactured in the carrier substrate 1360, preferably comprises a plurality of microelectronic components, such as MOS transistors, bipolar transistors, diodes, resistors, capacitors, coils and possibly other semiconductor components, which are in the carrier substrate 1360 and in particular in Metallization stacks are manufactured and are connected by lines to the microelectronic circuit, which are optically coupled to the paramagnetic centers of the crystals and / or the diamond nano-crystals ND, which preferably include diamond and / or NV centers, to form an overall system. The carrier substrate 1360 preferably comprises at least one micro-optical functional element, for example a first optical waveguide LWL1 and the microelectronic circuit in MOS, CMOS, BICMOS, or bipolar technology. Typically, the carrier substrate 1360 also has the light-sensitive electrical component (nG, pG), the photodetector PD, in order to preferably emit fluorescence radiation FL from the paramagnetic centers, in particular by means of this light-sensitive electrical component (pG, nG), the photodetector PD NV centers to capture the crystals and/or diamond nanocrystals ND. Typically, at least one operating parameter of the microelectronic circuit then depends on a value of the intensity I _is the fluorescence radiation FL of the paramagnetic centers of the crystals and/or diamond nanocrystals ND of the sensor elements detected by the light-sensitive component (pG, nG), the photodetector PD SE and/or the sensor element layer 5. The paramagnetic centers of the crystals and/or diamond nanocrystals ND of the sensor elements SE and/or the sensor element layer 5 are preferably coupled via the first micro-optical functional element LWL1 to the light-sensitive electrical component (pG, nG), the photodetector PD. Preferably, the first optical functional element and/or the second optical functional element are partially or completely identical. 89 but shows examples of various optical functional elements. However, such a quantum technological, micro-electro-optical or photonic or microelectronic system can can also be manufactured on a carrier substrate 1360 made of a direct semiconductor material. This has the advantage that the luminous efficacy of the light-emitting components of the system is higher when used as LED light sources and so a better pump performance can be achieved through the pump radiation LB, which _is the contrast between the intensity I and the fluorescence radiation FL of the paramagnetic centers of the crystals /or diamond nanocrystals ND of the sensor elements SE and/or the sensor element layer 5 at the magnetic flux density with maximum intensity I _is the fluorescence radiation FL of the paramagnetic centers of the crystals and/or diamond nanocrystals ND of the sensor elements SE and/or the Sensor element layer 5 and the intensity I _is the fluorescence radiation FL of the paramagnetic centers of the crystals and / or diamond nanocrystals ND of the sensor elements SE and / or the sensor element layer 5 at the magnetic flux density with minimal intensity I _is the fluorescence radiation FL paramagnetic centers of the crystals and / or diamond nanocrystals ND of the sensor elements SE and / or the sensor element layer 5 improved. Substrate materials of the carrier substrate 1360 are then preferably used, in which a semiconductor material of the substrate can be a III/V semiconductor material and/or a II/VI semiconductor material or a semiconductor material produced by bandgap engineering. The substrate material of the carrier substrate 1360 therefore explicitly does not have to be homogeneous, but can consist of different materials. The system then comprises a microelectronic circuit, which can preferably be part of the carrier substrate 1360, and an electrical component, which is preferably part of the microelectric circuit, and a micro-optical sub-device (LWL1, LWL2), which is preferably part of the carrier substrate 1360, and several Crystals and/or diamond nanocrystals ND, which can be diamonds, with paramagnetic centers of the crystals and/or diamond nanocrystals ND of the sensor elements SE and/or the sensor element layer 5. The carrier substrate 1360 thus comprises in the case presented here the microelectronic circuit and the electrical component and the micro-optical device (LWL1, LWL2). The special feature of the system is that it has at least one light-emitting electro-optical component MESA, preferably as a light source LED, which is part of the carrier substrate 1360 or is manufactured on the surface of the carrier substrate 1360, the carrier substrate 1360 comprising the light-emitting component MS as a light source LED and wherein the light-emitting electro-optical component MESA, as a light source LED, optically interacts with the micro-optical sub-device (LWL1, LWL2). The light-emitting electro-optical component MESA, as a light source LED, interacts electrically and/or optically with the electrical component in a direct or indirect manner by means of the micro-optical sub-device (LWL1, LWL2). This interaction between the light-emitting electro-optical component MESA as a light source LED with the electrical component preferably takes place with the participation of the paramagnetic centers of the crystals and/or diamond nano-crystals ND of the sensor elements SE and/or the sensor element layer 5.

In the case presented here, the carrier substrate 1360 is therefore preferably a semiconductor substrate, a silicon wafer or a GaAs wafer or a wafer made of a III/V material or a wafer made of II/VI material or made of a band gap material. Engineering treated wafer or a diamond wafer or a Ge wafer or another wafer made of a mixed semiconductor.

In the case of III/V materials, the substrate can also include another LED or a laser as the LED light source.

• • die Funktion einer optischen Linse und/oder
• • die Funktion eines photonischen Kristalls und/oder
• • die Funktion eines optischen Filters und/oder
• • die Funktion eines optischen ganz oder teilweise reflektierenden Spiegels und/oder
• • die Funktion eines Lichtwellenleiters (LWL1, LWL2) und/oder
• • die Funktion eines Richtkopplers und/oder
• • die Funktion eines Wellensumpfes und/oder
• • die Funktion eines Circulators (Zirkulators) und/oder
• • die Funktion eines Koppel- und/oder Auskoppelgliedes.

The quantum technological, micro-electro-optical or photonic system preferably comprises at least one micro-optical element. The micro-optical element is preferably suitable or intended to at least fulfill the function of one of the following micro-optical elements:

• • the function of an optical lens and/or
• • the function of a photonic crystal and/or
• • the function of an optical filter and/or
• • the function of an optical mirror that is fully or partially reflective and/or
• • the function of an optical fiber (LWL1, LWL2) and/or
• • the function of a directional coupler and/or
• • the function of a wave sump and/or
• • the function of a circulator and/or
• • the function of a coupling and/or decoupling element.

The paramagnetic centers of the crystals and/or diamond nanocrystals ND of the sensor elements SE and/or the sensor element layer 5 generally interact with magnetic fields. It is therefore conceivable that the device comprises at least one functional element of a magnetic circuit and/or a ferromagnetic sub-device or a ferromagnetic sub-structure. This can be a micro- or nanoscopic permanent magnet PM, which may be installed, for example, in the metallization stack of said MOS, CMOS, BICMOS or bipolar circuit, in particular above the paramagnetic centers of the crystals and/or diamond nanocrystals ND of the sensor elements SE and/or the sensor element layer 5 is integrated. It can preferably be a permanent magnet GPM with a gradient. Preferably, said ferromagnetic sub-device or sub-structure is part of a magnetic circuit. In this case, the quantum technological, microelectro-optical system preferably has an excitation device, for example a magnetic field generating means L _c , for example in the form of one or more flat coils manufactured in the metallization stack, which is suitable for causing magnetic excitation in the magnetic circuit. The magnetic sub-device is preferably manufactured by depositing a ferromagnetic layer and subsequent photolithographic structuring.

in the example of 89 The exemplary device comprises, above the sensor element SE or the sensor element layer 5, an exemplary magnetic field generating means L _c in the form of an exemplary flat coil in the metallization stack. With regard to function and operation, the document presented here refers to the previous descriptions.

If the paramagnetic centers of the crystals and/or diamond nanocrystals ND of the sensor elements SE and/or the sensor element layer 5 are to be used as sub-devices of a sensor system, the amount and/or the direction of the magnetic excitation H generated by the excitation device depends on the magnetic circuit or in the magnetic field generating means L _c preferably depends on an operating state parameter of the electronic circuit, i.e. preferably the MOS, CMOS, BICMOS or bipolar circuit. In this context, the document presented here refers to the document DE 10 2018 127 394 A1 . The use of the method presented here for producing a device according to DE 10 2018 127 394 A1 is expressly part of this disclosure. The document presented here is essentially concerned with the large-scale series production of systems such as those used in the DE 10 2018 127 394 A1 are described. The methods presented here will also be suitable for the production of quantum computers and other quantum optical systems that require a connection to microelectronic and/or micromechanical and/or microoptical systems.

Typically, such a quantum technological, micro-electro-optical system has a light-sensitive component (pG, nG). The light-sensitive component (pG, nG), in particular the photodetector PD, is then preferably suitable and/or intended for this, the intensity I _is a fluorescence radiation FL from paramagnetic centers of the crystals and/or diamond nanocrystals ND of the sensor elements SE and / or the sensor element layer 5 to detect. For this purpose, the paramagnetic centers of the crystals and/or diamond nanocrystals ND of the sensor elements SE and/or the sensor element layer 5 are preferably provided by various optical elements, on the one hand with a pump light source MS as a light source LED via an optical wave connection made up of several optical components (paramagnetic centers , SE, LWL2) and on the other hand with the light-sensitive component (pG, nG) in the form of the light source LED via a further optical wave connection made up of several further optical components (paramagnetic centers, SE, LWL1).

The integrated MOS circuit or CMOS circuit, or BICMOS circuit or circuit in bipolar technology or another circuit technology disclosed here is characterized by the fact that it has several crystalline sub-devices, which are preferably mechanically firmly connected to it and the paramagnetic centers of the crystals and/or diamond nanocrystals ND of the sensor elements SE and/or the sensor element layer 5, wherein the paramagnetic centers of the crystals and/or diamond nanocrystals ND of the sensor elements SE and/or the sensor element layer 5 are functional elements for the intended use of the integrated circuit. A colloidal film and/or a colloidal lacquer KL as a sensor element SE or sensor element layer 5 preferably establishes the mechanical connection between the crystalline sub-devices and the carrier substrate 1360. Preferably one or more optical couplings, for example through one or more micro-optical functional elements, create one or more active connections between the paramagnetic centers of the crystals and/or diamond nanocrystals ND of the sensor elements SE and/or the sensor element layer 5 and at least one or more parts the MOS, CMOS, BICMOS or bipolar circuit, in particular light-emitting areas LG of the light source LED and / or light-sensitive components (PD, pG, nG), in particular the photodetector PD. The integrated CMOS circuit, or MOS circuit, or BICMOS circuit or circuit in bipolar technology or another circuit technology typically has one or more transistors. In the case of a BICMOS circuit, these can be bipolar transistors and/or MOS transistors. In the case of a MOS or CMOS circuit, these can be MOS transistors. In the case of a bipolar circuit, these can be bipolar transistors.

The micro-integrated circuit is preferably designed in one piece. The micro-integrated circuit preferably comprises several of the following subdevices such as the control device CTR and the memories RAM, NVM, parts of the data bus DB, one or more light source drivers LDRV, one or more first signal generators G1, one or more multiple correlators LIV, one or more photodetectors PD, one or more first amplifiers V1, one or more pattern recognition devices MEV, one or more microwave sources µWG, one or more second signal generators G2, one or more magnetic field sensor controls SIS, one or more magnetic field sensors MS, one or more magnetic field controllers LCTR, one or more micro-optical functional elements 6 , 4, F1, one or more sensor elements SE and/or sensor element layers 5, one or more light sensor arrays 1, one or more evaluation electronics 15 of the light sensor array 1, one or more processing devices 30, one or more interface circuits 36, one or more permanent magnets 19 or several magnetic field generating devices L _c ,.

According to the technical teaching of the document presented here, the microelectronic circuit can comprise one or more sensor elements SE and/or one or more sensor layers 5. The one or more sensor elements SE and/or the one or more sensor layers 5 preferably comprise a plurality of crystals of different orientations with paramagnetic centers and/or a plurality of diamond nanocrystals ND of different orientations and NV centers and/or other paramagnetic centers .

The microelectronic circuit preferably comprises one or more light sources LED for generating the pump radiation LB for the one or more sensor elements SE and/or the one or more sensor layers 5.

The microelectronic circuit preferably comprises micro-optical functional elements for irradiating the one or more sensor elements SE and/or the one or more sensor layers 5 with the pump radiation LB of the one or more light sources LED.

The microelectronic circuit preferably comprises micro-optical functional elements for detecting the fluorescence radiation FL of the one or more sensor elements SE and/or the one or more sensor layers 5 and for separating the fluorescence radiation FL of the one or more sensor elements SE and/or the one or more sensor layers 5 from the Pump radiation LB from the one or more light sources LED and for irradiating the photodetectors PD with the fluorescence radiation FL from the one or more sensor elements SE and / or the one or more sensor layers 5.

For use in various applications, the microelectronic circuit can also include microfluidic and/or micromechanical and other micro-optical functional elements.

Figure 90

The 90 shows a spectrum of a MESA structure MESA the 89 from the prior art for an operating voltage of 15V.

The curve data comes from the document Röcken H., Meijer J., Stephan A., Weidenmüller U., Bukow HH, Rolfs C., “White electroluminescent nanostructure in silicon fabricated using focused ion implantation” Nuclear Instruments and Methods in Physics Researc B 181 (1001) Page 274- 279 .

It can be clearly seen that such a structure not only emits light in the range of the desired pump radiation wavelengths λ _pmp around 520nm, but also in the range of the expected fluorescence radiation FL above 600nm. Use without an optical bandpass filter 4 is therefore not advisable.

Figure 91

91 shows an exemplary carrier substrate 1360 with an angled waveguide 6980. The exemplary waveguide is in the example 91 a differential tri-plate line 6980. The exemplary waveline 6980 is covered by a sensor element layer 5 as a sensor element SE. The exemplary sensor element layer 5 should again comprise a plurality of crystals and/or diamond nanocrystals ND with paramagnetic centers, which, when irradiated with pump radiation LB of a pump radiation wavelength λ _pmp , produce a fluorescence radiation FL with a fluorescence wavelength λ _fl depending on the microwave frequency ω _µw of the Microwave signal µW and the additional magnetic flux density B _ad . The terminating resistors 6710 terminate the exemplary tri-plate waveguide 6980 as an exemplary waveguide again, preferably without reflection.

Preferably, a gradient-affected permanent magnet GPM from the other side of the carrier substrate 1360 floods the sensor element layer 5 with an additional magnetic flux density, which decreases, for example, in the x direction from a maximum additional magnetic flux density B _{ad_max} to a minimum additional magnetic flux density B _{ad_min} and which, for example decreases in the y-direction from a maximum additional magnetic flux density B _{ad_max} to a minimum additional magnetic flux density B _{ad_min} . Of course, other courses are conceivable.

This shifts the position of the V formation (522, 525, 530). 51b in the vertical of the 51b for each point of the sensor element layer 5 above the waveguide, here the tri-plate line 6980. Thus, the intensity curve of the intensity I _is (x, y) of the fluorescent radiation FL along the two branches of the waveguide, here the tri-plate line 6980 , conclusions about the microwave spectrum of the microwave signal µW.

The sensor system preferably includes RAM in a memory, NVM of the sensor system via a database of a large number of measured value curves for the intensity curve I _is (x, y) of the fluorescence radiation FL along the waveguide coordinates x, y for the respective curves of the two branches of the waveguide, here the Tri-plate line 6980, for various microwave frequencies ω _µW of the microwave signal µW known when recording these measured value curves and/or computer-implemented models and/or computer-implemented approximation functions that can deliver these measured values. Preferably, the control device CTR and/or the pattern recognition device MEV use their help to determine a correlation value K(ω _µW ) between the measured value curves for the intensity curve I _LIB (x) and I _LIB (y) of the fluorescent radiation FL along the two for _different microwave frequencies ωµ W Branches of the waveguide from the database or the computer-implemented models or the computer-implemented approximation functions on the one hand and the currently measured measured value curves for the intensity curve I _is (x) or I _is (y) of the fluorescence radiation FL along the two branches of the waveguide.

For the horizontal part of the waveguide (see 90 ) we form the correlation value K _w (ω _µW ), for example by forming an L2 product integral: $$K_w\left({\omega }_{\mathrm{\mu }W}\right)={\displaystyle {\int }_{x_a}^{x_b}{I}_{LIb}\left(x\right)\ast I_{ist}\left(x_0+x\right)dx}$$

For the vertical part of the waveguide (see 90 ) we form the correlation value K _s (ω _µW ), for example by forming an L2 product integral: $$K_s\left({\omega }_{\mathrm{\mu }W}\right)={\displaystyle {\int }_{y_a}^{y_b}{I}_{LIb}\left(y\right)\ast I_{ist}\left({\mathrm{<figure-callout\; id="0"\; label="y"\; filenames="DE102023122657A1\_0080.png,DE102023122657A1\_0109.png"\; state="\{\{state\}\}">y</figure-callout>}}_0+y\right)dy}$$

$$K_s\left({\omega }_{\mathrm{\mu }W}\right)={\displaystyle {\int }_{B_{ad}\left(y_a\right)}^{B_{ad}\left(y_b\right)}{I}_{LIB}\left(y\left(B_{ad}\right)\right)\ast I_{ist}\left(y\left(B_{ad}\right)+y\left(B_{ad}\left(y_0\right)\right)\right)d{B}_{ad}}$$

Since each position x and y is assigned exactly one additional magnetic flux density B _ad (x) and B _ad (y), respectively, this L2 product can also be written as: $$K_w\left({\omega }_{\mathrm{\mu }W}\right)={\displaystyle {\int }_{b_{ad}\left(x_a\right)}^{b_{ad}\left(x_b\right)}{I}_{LIb}\left(x\left(b_{ad}\right)\right)\ast I_{ist}\left(x\left(b_{ad}\right)+x\left(b_{ad}\left(x_0\right)\right)\right)d{b}_{ad}}$$

$$K_s\left({\omega }_{\mathrm{\mu }W}\right)={\displaystyle {\int }_{b_{ad}\left(y_a\right)}^{b_{ad}\left(y_b\right)}{I}_{LIb}\left(y\left(b_{ad}\right)\right)\ast I_{ist}\left(y\left(b_{ad}\right)+y\left(b_{ad}\left(y_0\right)\right)\right)d{b}_{ad}}$$

The V formation (see 51b and 84 ) can be limited to the left branch (522) or the right branch (25). Therefore, before feeding the microwave signal µW into the waveguide 6980 im If the left branch (522) is used, a low-pass filter (e.g. µWG_F_I) ensures that the microwave signal µW no longer includes any signal components with a microwave frequency ω _µW greater than the zero point microwave frequency ω _µW0 . Therefore, before feeding the microwave signal µW into the waveguide 6980 in the case of using the right branch (525), a high-pass filter (e.g. µWG_F_I) should ensure that the microwave signal µW no longer includes any signal components with a microwave frequency ω _µW smaller than the zero point microwave frequency ω _µW0 . In practice, the implementation of the low-pass filter and thus the use of the left branch (522) of the V-formation (see 2 ) easier.

In this case, each additional magnetic flux density B _ad (x) or B _ad (y) is then assigned exactly one microwave frequency ω _µW (B _ad (x)) or ω _µ w(B _ad (y)).

$$\begin{array}{l}{K}_s\left({\omega }_{\mathrm{\mu }W}\left(B_{ad}\left(y_0\right)\right)\right)\\ ={\displaystyle {\int }_{{\omega }_{\mathrm{\mu }W}\left(B_{ad}\left(y_a\right)\right)}^{{\omega }_{\mathrm{\mu }W}\left(B_{ad}\left(y_b\right)\right)}{I}_{LIB}\left(y\left(B_{ad}\left({\omega }_{\mathrm{\mu }W}\right)\right)\right)}\\ \ast I_{ist}\left(y\left(B_{ad}\left({\omega }_{\mathrm{\mu }W}\right)\right)+y\left(B_{ad}\left({\omega }_{\mathrm{\mu }W}\left(B_{ad}\left(y_0\right)\right)\right)\right)\right)d{\omega }_{\mathrm{\mu }W}\end{array}$$

The L2 product can then be written as: $$\begin{array}{l}{K}_w\left({\omega }_{\mathrm{\mu }W}\left(b_{ad}\left(x_0\right)\right)\right)\\ ={\displaystyle {\int }_{{\omega }_{\mathrm{\mu }W}\left(b_{ad}\left(x_a\right)\right)}^{{\omega }_{\mathrm{\mu }W}\left(b_{ad}\left(x_b\right)\right)}{I}_{LIb}\left(x\left(b_{ad}\left({\omega }_{\mathrm{\mu }W}\right)\right)\right)}\\ \ast I_{ist}\left(x\left(b_{ad}\left({\omega }_{\mathrm{\mu }W}\right)\right)+x\left(b_{ad}\left({\omega }_{\mathrm{\mu }W}\left(b_{ad}\left(x_0\right)\right)\right)\right)\right)d{\omega }_{\mathrm{\mu }W}\end{array}$$

$$\begin{array}{l}{K}_s\left({\omega }_{\mathrm{\mu }W}\left(b_{ad}\left(y_0\right)\right)\right)\\ ={\displaystyle {\int }_{{\omega }_{\mathrm{\mu }W}\left(b_{ad}\left(y_a\right)\right)}^{{\omega }_{\mathrm{\mu }W}\left(b_{ad}\left(y_b\right)\right)}{I}_{LIb}\left(y\left(b_{ad}\left({\omega }_{\mathrm{\mu }W}\right)\right)\right)}\\ \ast I_{ist}\left(y\left(b_{ad}\left({\omega }_{\mathrm{\mu }W}\right)\right)+y\left(b_{ad}\left({\omega }_{\mathrm{\mu }W}\left(b_{ad}\left(y_0\right)\right)\right)\right)\right)d{\omega }_{\mathrm{\mu }W}\end{array}$$

The document presented here refers to such a correlation value K _s (ω _µW ), K _w (ω _µW ), _which is dependent on the microwave frequencies ω µW, as the high-frequency spectrum of the microwave signal µW.

It is obvious that for a measurement of the measured value curves for the intensity curve I _is (x) or I _is (y) of the fluorescent radiation FL along the two branches of the waveguide magnetic field cameras as shown in 79 to 81 are shown as examples, are particularly cheap.

Figure 92

• • Bereitstellen 15310 eines Lichtwellenleiters LWL(4630), wobei der Lichtwellenleiter LWL(4630) ein erstes Ende und ein zweites Ende aufweist;
• • Bereitstellen 15320 eines flüssigen und mittels elektromagnetischer Strahlung einer Aushärtewellenlänge λ_H härtbaren Trägermaterials TM, wobei in das Trägermaterial TM eine Vielzahl von Kristallen und/oder Diamant-Nano-Kristallen ND, vorzugsweise Nanodiamanten, eingebettet sind und wobei einer oder mehrere oder alle Kristalle und/oder Diamant-Nano-Kristalle ND NV-Zentren und/oder andere paramagnetischen Zentren aufweisen und wobei die NV-Zentren der Kristalle und/oder Diamant-Nano-Kristalle ND des Trägermaterials TM und/oder die anderen paramagnetischen Zentren der Kristalle und/oder Diamant-Nano-Kristalle ND des Trägermaterials TM bei Bestrahlung mit Pumpstrahlung LB zumindest eine Fluoreszenzstrahlung FL emittieren;
• • Benetzen 15330 des zweiten Endes des Lichtwellenleiters LWL(4630) zumindest auf eine Benetzungslänge L_B mit dem Trägermaterial TM, das die Vielzahl eingebetteter Kristalle und/oder Diamant-Nano-Kristalle ND mit NV-Zentren und/oder paramagnetischen Zentren aufweist;
• • Einspeisen 15340 elektromagnetischer Strahlung in das erste Ende des Lichtwellenleiters LWL(4630), wobei die Wellenlänge dieser elektromagnetischen Strahlung, die Aushärtewellenlänge λ_H, so gewählt ist, dass das Trägermaterial TM am zweiten Ende des Lichtwellenleiters LWL(4630) aushärtet und sich in einen Festkörper wandelt.
• • Entfernen 15350 des nicht ausgehärteten Trägermaterials TM insbesondere mittels eines Lösungsmittels LM, wobei der verbleibende Film des Trägermaterials TM am zweiten Ende des Lichtwellenleiters LWL(4630) das Sensorelement SE bildet.

92 illustrates schematically simplified the already mentioned method for producing a self-aligned sensor element SE optical fiber LWL (4630), as described and used previously. The proposed procedure includes the steps:

• • Providing 15310 an optical fiber LWL(4630), the optical fiber LWL(4630) having a first end and a second end;
• • Providing 15320 a liquid carrier material TM that can be hardened by means of electromagnetic radiation of a curing wavelength λ _H , wherein a large number of crystals and / or diamond nano-crystals ND, preferably nanodiamonds, are embedded in the carrier material TM and wherein one or more or all crystals and / or diamond nanocrystals ND have NV centers and / or other paramagnetic centers and wherein the NV centers of the crystals and / or diamond nanocrystals ND of the carrier material TM and / or the other paramagnetic centers of the crystals and / or Diamond nanocrystals ND of the carrier material TM emit at least one fluorescent radiation FL when irradiated with pump radiation LB;
• • Wetting 15330 the second end of the optical waveguide LWL (4630) at least to a wetting length L _B with the carrier material TM, which has the plurality of embedded crystals and / or diamond nanocrystals ND with NV centers and / or paramagnetic centers;
• • Feeding 15340 electromagnetic radiation into the first end of the optical waveguide LWL (4630), the wavelength of this electromagnetic radiation, the curing wavelength λ _H , being selected so that the carrier material TM hardens at the second end of the optical waveguide LWL (4630) and turns into one Solid body transforms.
• • Removing 15350 the uncured carrier material TM, in particular by means of a solvent LM, with the remaining film of the carrier material TM forming the sensor element SE at the second end of the optical waveguide LWL (4630).

Typically, the carrier material TM only partially hardens, which enables the formation of the optical functional element and the sensor element SE.

Figure 93

• • Bereitstellen 15410 eines Lichtwellenleiters LWL(4630), wobei der Lichtwellenleiter LWL(4630) ein erstes Ende und ein zweites Ende aufweist;
• • Bereitstellen 15420 eines flüssigen und mittels elektromagnetischer Strahlung einer Aushärtewellenlänge λ_H härtbaren Trägermaterials TM, wobei in das Trägermaterial TM eine Vielzahl von Kristallen und/oder Diamant-Nano-Kristallen ND, vorzugsweise Nanodiamanten, eingebettet sind und wobei einer oder mehrere oder alle Kristalle und/oder Diamant-Nano-Kristalle ND NV-Zentren und/oder andere paramagnetischen Zentren aufweisen und wobei die NV-Zentren der Kristalle und/oder Diamant-Nano-Kristalle ND des Trägermaterials TM und/oder die anderen paramagnetischen Zentren der Kristalle und/oder Diamant-Nano-Kristalle ND des Trägermaterials TM bei Bestrahlung mit Pumpstrahlung LB zumindest eine Fluoreszenzstrahlung FL emittieren;
• • Beschichten 15430 des zweiten Endes des Lichtwellenleiters LWL(4630) zumindest auf eine Benetzungslänge L_B mit dem Trägermaterial TM, das die Vielzahl eingebetteter Kristalle und/oder Diamant-Nano-Kristalle ND mit NV-Zentren und/oder paramagnetischen Zentren aufweist;
• • Justieren 15440 einer Belichtungsmaske 5410 gegenüber dem Trägersubstrat 1360.
• • Bestrahlen 15450 des zweiten Endes des Lichtwellenleiters LWL(4630) durch die Belichtungsmaske 5410 mit elektromagnetischer, wobei die Wellenlänge dieser elektromagnetischen Strahlung, die Aushärtewellenlänge λ_H, so gewählt ist, dass das Trägermaterial TM am zweiten Ende des Lichtwellenleiters LWL(4630) aushärtet und sich in einen Festkörper wandelt;
• • Entfernen 15460 des nicht ausgehärteten Trägermaterials TM insbesondere mittels eines Lösungsmittels LM, wobei der verbleibende Film des Trägermaterials TM am zweiten Ende des Lichtwellenleiters LWL(4630) das Sensorelement SE bildet.

93 illustrates schematically simplified the already mentioned method for producing a mask-adjusted sensor element SE on the optical waveguide LWL (4630), as it was previously described and used. The proposed procedure includes the steps:

• • Providing 15410 an optical fiber LWL(4630), the optical fiber LWL(4630) having a first end and a second end;
• • Providing 15420 a liquid carrier material TM that can be hardened by means of electromagnetic radiation of a curing wavelength λ _H , wherein a large number of crystals and / or diamond nano-crystals ND, preferably nanodiamonds, are embedded in the carrier material TM and wherein one or more or all crystals and / or diamond nanocrystals ND have NV centers and / or other paramagnetic centers and wherein the NV centers of the crystals and / or diamond nanocrystals ND of the carrier material TM and / or the other paramagnetic centers of the crystals and / or Diamond nanocrystals ND of the carrier material TM emit at least one fluorescent radiation FL when irradiated with pump radiation LB;
• • Coating 15430 the second end of the optical waveguide LWL (4630) at least to a wetting length L _B with the carrier material TM, which has the plurality of embedded crystals and / or diamond nanocrystals ND with NV centers and / or paramagnetic centers;
• • Adjusting 15440 an exposure mask 5410 relative to the carrier substrate 1360.
• • Irradiate 15450 the second end of the optical waveguide LWL (4630) through the exposure mask 5410 with electromagnetic radiation, the wavelength of this electromagnetic radiation, the curing wavelength λ _H , being selected so that the carrier material TM hardens at the second end of the optical waveguide LWL (4630) and turns into a solid;
• • Removing 15460 the uncured carrier material TM, in particular by means of a solvent LM, with the remaining film of the carrier material TM forming the sensor element SE at the second end of the optical waveguide LWL (4630).

Typically, the carrier material TM only partially hardens, which enables the formation of the optical functional element and the sensor element SE.

Figure 94

94 shows an exemplary optically transparent carrier substrate 1360 with an exemplary waveguide in the form of a tri-plate line 2380. When selecting the waveguide type of the waveguide on the surface of the optically transparent carrier substrate 1360, it is advantageous if the lines and electrically conductive surfaces of the waveguide in question completely cover the surface of the optically transparent carrier substrate 1360 except for the clearences (2340, 2350), so that light from the optically transparent carrier substrate 1360 essentially only passes over the edges of the optically transparent carrier substrate 1360 and / or the clearences (2340, 2350) of the waveguide the optically transparent carrier substrate 1360 can leave. For this purpose, the electrically conductive back contact 1370 is preferably designed to be reflective, so that it reflects the light within the optically transparent carrier substrate 1360 back into the optically transparent carrier substrate 1360. This increases the intensity of the pump radiation in the clearances (2340, 2350) of the waveguide. For example, slot lines 1880, tri-plate lines 2380, and differential tri-plate lines 6980 come into consideration as waveguides, since these typically have an electrically conductive left signal ground surface 1310 and an electrically conductive right signal ground surface 1320, which allow the light to exit. in particular prevent the pump radiation 13 (13) from the optically transparent carrier substrate 1360.

In the case of a slot line 1880, the slot 1840 of the slot line 1880 forms the clearance through which the pump radiation 13 (13) comes out of the carrier substrate that is optically transparent to the pump radiation 13 (13). 1360 can exit and enter the sensor layer 5 as a sensor element SE. Typically, the paramagnetic centers, here typically NV centers in diamonds within the irradiated segments of the sensor layer 5 in the slot 1840 of the slot line 1880, emit fluorescent radiation 14 as a result of the irradiation with the pump radiation 13 (13).

In the case of a tri-plate line 2380, the electrically essentially non-conductive left insulation gap 2340 and the electrically essentially non-conductive right insulation gap 2350 of the tri-plate line 2380 form the two clearances through which the pump radiation 13 (13) can emerge from the carrier substrate 1360, which is optically transparent to the pump radiation 13 (13), and can enter the two partial segments of the sensor layer 5 as sensor elements SE. Typically, the paramagnetic centers, here typically NV centers in diamonds, emit within the irradiated segments of the sensor layer 5 in the electrically essentially non-conductive left insulation gap 2340 and in the electrically essentially non-conductive right insulation gap 2350 of the tri-plate line 2380 , fluorescence radiation 14 as a result of irradiation with the pump radiation 13 (13).

In the case of a differential tri-plate line 6980, the electrically essentially non-conductive left insulation gap 2340 and the electrically essentially non-conductive right insulation gap 2350 form the tri-plate line 2380 as well as the electrically insulating gap 6840 between the left signal conductor 6810 and the right signal conductor 6820 of the differential signal conductor 6830 of the tri-plate line 2380, the three clearances through which the pump radiation 13 (13) can emerge from the carrier substrate 1360, which is optically transparent to the pump radiation 13 (13), and into the three sub-segments of the sensor layer 5 can occur as sensor elements SE in these three clearances. Typically, the paramagnetic centers, here typically NV centers in diamonds, emit within the irradiated segments of the sensor layer 5 in the electrically essentially non-conductive left insulation gap 2340 and in the electrically essentially non-conductive right insulation gap 2350 of the tri-plate line 2380 as well as in the electrically insulating gap 6840 between the left signal conductor 6810 and the right signal conductor 6820 of the differential signal conductor 6830 of the tri-plate line 2380, fluorescent radiation 14 as a result of the irradiation with the pump radiation 13.

During normal operation, LEDs as pump radiation sources 44 preferably emit the pump radiation 13 and radiate it into the optically transparent carrier substrate 1360 via edges of the optically transparent carrier substrate 1360. The optically transparent carrier substrate 1360 distributes the pump radiation 13 within the optically transparent carrier substrate 1360.

The pump radiation 13 emerges from the optically transparent carrier substrate 1360 through the clearances (2349, 2350) of the waveguide (2380) and irradiates the sensor elements SE of the sensor layer 5.

The circuit board (PCB) 43 for the LEDs 44 is preferably installed in a magnetic field camera, such as that described in this document. The remaining sections of this document are expressly referred to here.

Figure 95

95 shows the exemplary process of manufacturing a device accordingly 94 .

1. 1. Bereitstellen 20310 eines optisch transparenten Trägersubstrat 1360, wobei das optisch transparente Trägersubstrat 1360 zumindest eine optische transparente Kante aufweist und wobei das optisch transparente Trägersubstrat 1360 mit einem Wellenleiter mit zumindest einer Clearance, beispielsweise einer Schlitzleitung und/oder einer Tri-Plate-Leitung oder einer differenziellen Tri-Plate-Leitung, abgedeckt ist, sodass Licht im Wesentlichen nur durch die Clearance des Welleneiters auf der Oberfläche des optisch transparenten Trägersubstrats 1360 aus dem optisch transparenten Trägersubstrat 1360 austreten kann.
2. 2. Bereitstellen 20320 einer flüssigen kolloidalen Mischung KL mit einem flüssigen und mittels elektromagnetischer Strahlung, der Aushärtestrahlung 4910, einer Aushärtewellenlänge λ_H härtbaren Trägermaterial TM, wobei in das Trägermaterial TM der kolloidalen Mischung KL eine Vielzahl von Kristallen und/oder Diamant-Nano-Kristallen ND, vorzugsweise Nanodiamanten, eingebettet sind und wobei einer oder mehrere oder alle Kristalle und/oder Diamant-Nano-Kristalle ND NV-Zentren und/oder andere paramagnetischen Zentren aufweisen und wobei die NV-Zentren der Kristalle und/oder Diamant-Nano-Kristalle ND der kolloidalen Mischung KL und/oder die anderen paramagnetischen Zentren der Kristalle und/oder Diamant-Nano-Kristalle ND der kolloidalen Mischung KL bei Bestrahlung mit Pumpstrahlung LB zumindest eine Fluoreszenzstrahlung FL emittieren;
3. 3. Beschichten 20330 der er Oberfläche des optisch transparenten Trägersubstrats 1360 und des Wellenleiters auf der Oberfläche des optisch transparenten Trägersubstrats 1360 zumindest auf eine Benetzungslänge L_B mit der kolloidalen Mischung KL aus dem Trägermaterial TM und den Kristallen und/oder Diamant-Nano-Kristallen ND mit NV-Zentren und/oder paramagnetischen Zentren, wobei die kolloidale Mischung KL somit eine Vielzahl eingebetteter Kristalle und/oder Diamant-Nano-Kristalle ND mit NV-Zentren und/oder paramagnetischen Zentren aufweist;
4. 4. ggf. (nicht eingezeichnet) Anhärten der Beschichtung des optisch transparenten Trägersubstrats 1360 aus der kolloidalen Mischung KL insbesondere mittels einer Temperaturbehandlung;
5. 5. Einspeisen 20340 elektromagnetischer Aushärtestrahlung 4910 mit der Aushärtewellenlänge λ_H über die mindestens eine Kante des optisch transparenten Trägersubstrats 1360 in das optisch transparente Trägersubstrat 1360,
6. 6. Austreten 20350 der Aushärtestrahlung 4910 im Bereich zumindest einer Clearance (1840, 2340, 2350, 6840) des Wellenleiters (1880, 2380, 6980) auf der Oberfläche des optisch transparenten Trägersubstrats 1360 aus dem des optisch transparenten Trägersubstrats 1360 und einstrahlen der Aushärtestrahlung 4910 in das Trägermaterial TM der kolloidalen Mischung KL, wobei die Aushärtewellenlänge λ_H der Aushärtestrahlung 4910 so gewählt ist, dass das Trägermaterial TM der kolloidalen Mischung KL im Bereich dieser Clearance (1840, 2340, 2350, 6840) des Wellenleiters (1880, 2380, 6980) auf der Oberfläche des optisch transparenten Trägersubstrats 1360 aushärtet und sich die kolloidale Mischung KL im bestrahlten Bereich in einen Festkörper wandelt;
7. 7. Entfernen 20360 des nicht ausgehärteten Trägermaterials TM der kolloidalen Mischung KL insbesondere mittels eines Lösungsmittels LM, wobei der verbleibende Film des Trägermaterials TM der kolloidalen Mischung KL und der kolloidalen Mischung KL im Bereich dieser Clearance (1840, 2340, 2350, 6840) des Wellenleiters (1880, 2380, 6980) auf der Oberfläche des optisch transparenten Trägersubstrats 1360 ein Sensorelement SE und/oder eine Sensorschicht 16205 bildet;
8. 8. ggf. (nicht eingezeichnet) finales Aushärten des Trägermaterials TM der kolloidalen Mischung KL des verbliebenen Sensorelements SE und/oder eine Sensorschicht 16205 in den Clearances (1840, 2340, 2350, 6840) des Wellenleiters (1880, 2380, 6980) im Bereich einer Clearance des Wellenleiters (1880, 2380, 6980) auf der Oberfläche des optisch transparenten Trägersubstrats 1360 insbesondere mittels einer Temperaturbehandlung. Die Erforderlichkeit dieses Post-Bake-Schrittes bestimmt sich aus der Art des verwendeten Trägermaterials TM der kolloidalen Mischung KL und des Lösungsmittels LM in der kolloidalen Mischung KL.

The proposed method preferably includes the following steps:

1. 1. Providing 20310 an optically transparent carrier substrate 1360, wherein the optically transparent carrier substrate 1360 has at least one optically transparent edge and wherein the optically transparent carrier substrate 1360 is provided with a waveguide with at least one clearance, for example a slot line and/or a tri-plate line or a differential tri-plate line, so that light can essentially only emerge from the optically transparent carrier substrate 1360 through the clearance of the waveguide on the surface of the optically transparent carrier substrate 1360.
2. 2. Providing 20320 a liquid colloidal mixture KL with a liquid carrier material TM that can be hardened using electromagnetic radiation, the curing radiation 4910, a curing wavelength λ _H , wherein a large number of crystals and / or diamond nano-crystals are incorporated into the carrier material TM of the colloidal mixture KL ND, preferably nanodiamonds, are embedded and wherein one or more or all of the crystals and/or diamond nanocrystals ND have NV centers and/or other paramagnetic centers and wherein the NV centers of the crystals and/or diamond nanocrystals talle ND of the colloidal mixture KL and/or the other paramagnetic centers of the crystals and/or diamond nanocrystals ND of the colloidal mixture KL emit at least one fluorescent radiation FL upon irradiation with pump radiation LB;
3. 3. Coating 20330 the surface of the optically transparent carrier substrate 1360 and the waveguide on the surface of the optically transparent carrier substrate 1360 at least to a wetting length L _B with the colloidal mixture KL of the carrier material TM and the crystals and / or diamond nano-crystals ND with NV centers and/or paramagnetic centers, the colloidal mixture KL thus having a plurality of embedded crystals and/or diamond nanocrystals ND with NV centers and/or paramagnetic centers;
4. 4. if necessary (not shown) hardening the coating of the optically transparent carrier substrate 1360 from the colloidal mixture KL, in particular by means of a temperature treatment;
5. 5. feeding 20340 electromagnetic curing radiation 4910 with the curing wavelength λ _H via the at least one edge of the optically transparent carrier substrate 1360 into the optically transparent carrier substrate 1360,
6. 6. Emergence 20350 of the curing radiation 4910 in the area of at least one clearance (1840, 2340, 2350, 6840) of the waveguide (1880, 2380, 6980) on the surface of the optically transparent carrier substrate 1360 from that of the optically transparent carrier substrate 1360 and irradiating the curing radiation 4910 into the carrier material TM of the colloidal mixture KL, the curing wavelength λ _H of the curing radiation 4910 being selected such that the carrier material TM of the colloidal mixture KL is in the range of this clearance (1840, 2340, 2350, 6840) of the waveguide (1880, 2380, 6980 ) hardens on the surface of the optically transparent carrier substrate 1360 and the colloidal mixture KL transforms into a solid in the irradiated area;
7. 7. Removing 20360 the uncured carrier material TM of the colloidal mixture KL, in particular by means of a solvent LM, the remaining film of the carrier material TM of the colloidal mixture KL and the colloidal mixture KL in the area of this clearance (1840, 2340, 2350, 6840) of the waveguide (1880, 2380, 6980) forms a sensor element SE and/or a sensor layer 16205 on the surface of the optically transparent carrier substrate 1360;
8. 8. if necessary (not shown) final curing of the carrier material TM of the colloidal mixture KL of the remaining sensor element SE and / or a sensor layer 16205 in the clearances (1840, 2340, 2350, 6840) of the waveguide (1880, 2380, 6980) in the area a clearance of the waveguide (1880, 2380, 6980) on the surface of the optically transparent carrier substrate 1360, in particular by means of a temperature treatment. The necessity of this post-bake step is determined by the type of carrier material TM used in the colloidal mixture KL and the solvent LM in the colloidal mixture KL.

Figure 96

96 shows schematically the implementation of the curing of the carrier material TM of the colloidal mixture KL according to the method 96 in step 20350. At this point in time, the pump radiation sources 44 and the circuit board (PCB) 43 for the LEDs 44 and their power supply 45 are preferably not yet connected to the optically transparent carrier substrate 1360.

1. 1. Steuerung der Aushärtestrahlungsquellen z.B. durch Anschalten / Ausschalten der Aushärtestrahlungsquellen und/oder
2. 2. mittels Shuttern innerhalb des optische Aushärtesystems z.B. durch Unterbrechen / Öffnen des optischen Pfads zwischen Aushärtestrahlungsquellen und dem optisch transparenten Trägersubstrat 1360

steuern kann. Das Rechnersystem innerhalb der Aushärtesteuerungsvorrichtung kann typischerweise mittels eines computerimplementierten Aushärtesteuerungsprogramms innerhalb des Speichers des Rechnersystems der Aushärtesteuerung den Aushärtevorgang steuern. Der Programmcode des computerimplementierten Aushärtesteuerungsprogramms befindet sich dabei vorzugsweise in dem Speicher des Rechnersystems der Aushärtesteuerungsvorrichtung. Das Rechnersystem innerhalb der Aushärtesteuerungsvorrichtung führt diesen Programmcode typischerweise bei der Bestrahlung des optisch transparenten Trägersubstrats 1360 aus. Der Speicher kann ein ggf. auch austauschbares Speichermedium umfassen, das diesen Programmcode und/oder Parameter für die Durchführung der Bestrahlung umfasst. Bevorzugt temperiert eine 8nicht eingezeichnete Temperiervorrichtung das optisch transparenten Trägersubstrat 1360 während der Bestrahlung mit Aushärtestrahlung 4910. Bei der Temperiervorrichtung kann es sich auch um einen beheizbaren und/oder klimatisierbaren Raum handeln, in dem die Bestrahlung mit Aushärtestrahlung 4910 stattfindet. Die Aushärtesteuerungsvorrichtung kann ggf. diese Temperiervorrichtung in Abhängigkeit von dem temperaturmesswert eines Temperatursensors steuern.Curing radiation sources (not shown) emit curing radiation 4910 with a curing wavelength λ _H. An optical curing system (not shown) transports the curing radiation 4910 to the optically transparent edges of the optically transparent carrier substrate 1360. This optical curing system preferably includes one or more optical functional elements such as mirrors, lenses, apertures, prisms, etc. in order to guide the curing radiation 4910 the intensity and spectrum can be adjusted appropriately. The system of curing radiation sources and optical curing system preferably has a curing control (not shown) with a timer and / or a computer system with a memory, so that the computer system of the curing control and / or the curing control determines the duration of the irradiation

1. 1. Control of the curing radiation sources, e.g. by switching on/off the curing radiation sources and/or
2. 2. by means of shutters within the optical curing system, for example by interrupting/opening the optical path between curing radiation sources and the optically transparent carrier substrate 1360

can control. The computer system within the curing control device can typically control the curing process by means of a computer-implemented curing control program within the memory of the curing control computer system. The program code of the computer-implemented curing control program is preferably located in the memory of the computer system of the curing control device. The computer system within the curing control device typically executes this program code when the optically transparent carrier substrate 1360 is irradiated. The memory can include a possibly replaceable storage medium that includes this program code and/or parameters for carrying out the irradiation. Preferably, a temperature control device (not shown) tempers the optically transparent carrier substrate 1360 during the irradiation with curing radiation 4910. The temperature control device can also be a heatable and/or air-conditioned room in which the irradiation with curing radiation 4910 takes place. The curing control device can optionally control this temperature control device depending on the temperature measurement value of a temperature sensor.

The optical curing system radiates the curing radiation 4910 into the optically transparent carrier substrate 1360 via the edges of the optically transparent carrier substrate 1360.

The optically transparent carrier substrate 1360 is preferably sufficiently transparent for electromagnetic radiation with the curing wavelength λ _H of the curing radiation 4910 for the intended purpose, so that the curing radiation 4910 the colloidal material KL in the clearances (1840, 2340, 2350, 6840) of the waveguide (1880, 2380, 6980) on the surface of the optically transparent carrier substrate 1360 in an intensity sufficient for curing of the carrier material TM of the colloidal mixture KL. This means that the optically transparent carrier substrate 1360 is preferably essentially transparent to electromagnetic radiation with the curing wavelength λ _H of the curing radiation 4910.

The optically transparent carrier substrate 1360 is preferably essentially transparent to electromagnetic radiation with the pump radiation wavelength λ _pmp . This means that the intensity of the pump radiation 13 (see 94 ), which reaches the paramagnetic centers of the crystals and/or diamond nanocrystals ND and/or the NV centers of the diamond nanocrystals ND after passing through the material of the optically transparent carrier substrate 1360, is sufficient for this to be emitted of fluorescent radiation 14 (see 94 ).

The irradiation of the colloidal material KL in the clearances (1840, 2340, 2350, 6840) of the waveguide (1880, 2380, 6980) on the surface of the optically transparent carrier substrate 1360 leads to the hardening of the carrier material TM of the colloidal mixture KL in the clearances (1840 , 2340, 2350, 6840) of the waveguide (1880, 2380, 6980) on the surface of the optically transparent carrier substrate 1360. This forms solidified sensor elements SE within the colloidal material KL in the clearances (1840, 2340, 2350, 6840) of the waveguide (1880, 2380, 6980) on the surface of the optically transparent carrier substrate 1360. After removing 20360 the excess colloidal material KL, the optically transparent carrier substrate 1360 includes the necessary sensor elements SE in the clearances (1840, 2340, 2350, 6840) of the waveguide (1880, 2380, 6980) on the surface of the optically transparent carrier substrate 1360 to be used as schematically sketched in Figure 202. This use can preferably take place in one of the magnetic field cameras described above.

Figure 97a

97a schematically shows an exemplary carrier substrate 1360 with an exemplary tri-plate waveguide 2389 as an example of a waveguide (1380, 1880, 2380, 6880, 6990). The exemplary tri-plate waveguide 2380 is covered with the sensor element SE on a section 15740 of the waveguide (1380, 1880, 2380, 6880, 6990). The sensor element SE, which is preferably produced according to one of the methods described here and hardened by means of curing radiation 4910, once again comprises, for example, a preferably radiation-hardened and optically transparent carrier material TM, which preferably again contains crystals and/or diamonds DM with paramagnetic centers and/or NV centers NVZ. In the area of the section 15740 of the waveguide (1380, 1880, 2380, 6880, 6990), which is covered with the sensor element SE, the paramagnetic centers and / or NV centers NVZ of the crystals and / or diamonds DM, which are in the Carrier material TM of the sensor element SE are embedded, with a microwave signal μW and / or an HF signal RW, which, for example, via a first microwave and / or HF connector 15710 for connecting the waveguide (1380, 1880, 2380, 6880, 6990 ) are fed, for example, into the signal conductor 1330 of the exemplary triplate line 2380, interact. This interaction causes a frequency-dependent characteristic impedance that deviates from the characteristic impedance of the remaining wave cable (1380, 1880, 2380, 6880, 6990), here the tri-plate cable 2380.

A first part of the microwave signal µW radiated into the section 15740 of the waveguide (1380, 1880, 2380, 6880, 6990), which is covered with the sensor element SE, is as a reflected microwave signal µWR as a result of the wave resistance jumps at the transitions from the undisturbed waveguide (1380, 1880, 2380, 6880, 6990), to the route 15740 and back again as a reflected microwave signal µWR in the direction of the first microwave and / or HF connector 15710 and can be coupled out of the transmission line using a wave coupler µWC and a reflection Microwave analyzer µWAR, which can determine relevant parameters such as amplitude, phase, spectrum, etc.

A second part of the microwave signal µW radiated into the section 15740 of the waveguide (1380, 1880, 2380, 6880, 6990), which is covered with the sensor element SE, is transmitted as a transmitted microwave signal µWT due to the jumps in wave resistance at the transitions from the undisturbed waveguide (1380, 1880, 2380, 6880, 6990), to the route 15740 and back again as a transmitted microwave signal µWT in the direction of the second microwave and / or HF connector 15720 and can be fed there to a transmission microwave analyzer µWAT, which, for example, contains relevant parameters such as amplitude, phase, spectrum etc. can determine.

If the relevant parameters of the irradiated microwave signal µW and the reflected microwave signal µWR and the transmitted microwave signal µWT are known, a control device CTR can, for example, receive this data from the microwave source µWG and the reflection microwave analyzer µWAR and the transmission microwave analyzer µWAT via the Data bus DB receives a third absorbed portion of an absorbed microwave signal µWA of the microwave signal µW. The carrier material TM of the sensor element SE and/or the paramagnetic centers and/or the NV centers NVZ of the crystals and/or diamonds DM, which are embedded in the carrier material TM of the sensor element SE, then typically influence this absorbed microwave signal μWA. Therefore, the absorbed microwave signal μWA typically depends on the quantum states of the paramagnetic centers and/or the NV centers NVZ of the crystals and/or diamonds DM, which are embedded in the carrier material TM of the sensor element SE. It is therefore possible that the absorbed microwave signal µWA depends on the intensity of a pump radiation LB, which irradiates the paramagnetic centers and/or the NV centers NVZ of the crystals and/or diamonds DM with electromagnetic radiation of a pump radiation wavelength λ _pmp , and then additionally of physical parameters of physical quantities, such as magnetic flux densities, which influence the paramagnetic centers and/or the NV centers NVZ of the crystals and/or diamonds DM.

If the relevant parameters of the irradiated HF signal RW and the reflected HF signal RWR and the transmitted HF signal RWT are known, a control device CTR can, for example, receive this data from the HF source RFG and the reflected HF signal analyzer RWAR and the transmission HF signal analyzer RWAT receives a conclusion via the data bus DB on a third absorbed portion of an absorbed HF signal RWA of the HF signal RW. The carrier material TM of the sensor element SE and/or the paramagnetic centers and/or the NV centers NVZ of the crystals and/or diamonds DM, which are embedded in the carrier material TM of the sensor element SE, then typically influence this absorbed RF signal RWA . Therefore, the absorbed RF signal RWA typically depends on the quantum states of the paramagnetic centers and/or the NV centers NVZ of the crystals and/or diamonds DM, which are embedded in the carrier material TM of the sensor element SE. It is therefore possible that the absorbed RF signal RWA has the intensity of a pump radiation LB, which irradiates the paramagnetic centers and/or the NV centers NVZ of the crystals and/or diamonds DM with electromagnetic radiation of a pump radiation wavelength λ _pmp , and then additionally depends on physical parameters of physical quantities, such as magnetic flux densities, which influence the paramagnetic centers and/or the NV centers NVZ of the crystals and/or diamonds DM.

Figure 97b

97b schematically shows an exemplary carrier substrate 1360 with an exemplary tri-plate waveguide 2389 as an example of a waveguide (1380, 1880, 2380, 6880, 6990), where XXXX is the distance 15740 of the waveguide (1380, 1880, 2380, 6880, 6990) , which is covered with the sensor element SE, and thus protects it from damage. The cover 15730 of the carrier substrate 1360 with the waveguide (1380, 1880, 2380, 6880, 6990) and the sensor element SE for mechanical and chemical protection of the sensor element SE and possibly for EMC protection preferably does not influence the value and / or amount of the physical quantity to be measured. The physical quantity to be measured can be, for example, a magnetic flux density B at the location of the sensor element SE.

Figure 98

98 largely corresponds to that 78 , wherein additionally the reference number of the first microwave and/or RF connector 15710 for connecting the waveguide (1380, 1880, 2380, 6880, 6990) to the microwave signal source µWG and the HF signal source RFG and to a reflection microwave signal analyzer (µWAR ) and to a reflection RF signal analyzer (RWAR) with the reference number 15710. In the example of the 98 a differential tri-plate line 6980 is shown as an exemplary waveline (1380, 1880, 2380, 6880, 6990) as an example and representative of other wavelines (1380, 1880, 2380, 6880, 6990). In this case, the first microwave and/or RF connector 15710 is preferably a triax connector, which allows the simultaneous but separate connection of a microwave signal μW and an RF signal RW to different signal conductors 6910, 6920 of the exemplary differential tri-plate Line 6980 enables.

Furthermore, the second microwave and/or RF connector 15720 is additionally provided for connecting the waveguide (1380, 1880, 2380, 6880, 6990) to a reflection microwave signal analyzer (µWAR) and to a transmission RF signal analyzer (RWAT ) shown. In the example of the 98 a differential tri-plate line 6980 is shown as an exemplary waveline (1380, 1880, 2380, 6880, 6990) as an example and representative of other wavelines (1380, 1880, 2380, 6880, 6990). In this case, the second microwave and/or RF connector 15720 is also preferably a triax connector, which allows the simultaneous but separate removal of the transmitted microwave signal μWT and the transmitted RF signal RWT to the relevant different signal conductors 6910, 6920 of the exemplary ones differential tri-plate line 6980 enables.

A first part of the microwave signal µW radiated into the section 15740 of the exemplary differential tri-plate line 6980, which is covered with the sensor element SE, is reflected as a reflected microwave signal µWR as a result of the characteristic impedance jumps at the transitions from the undisturbed exemplary differential tri-plate line 6980 to the route 15740 and back again as a reflected microwave signal µWR in the direction of the first microwave and / or HF connector 15710 and is there coupled out of the transmission line by means of a wave coupler µWC and fed to the reflection microwave analyzer µWAR, which is relevant, for example Parameters such as amplitude, phase, spectrum etc. can be determined. The reflection microwave analyzer µWAR preferably transmits the recorded parameters to the control device CTR via the data bus DB.

A second part of the microwave signal µW radiated into the section 15740 of the exemplary differential tri-plate line 6980, which is covered with the sensor element SE, is transmitted as a transmitted microwave signal µWT as a result of the characteristic impedance jumps at the transitions from the undisturbed one of the exemplary differential tri-plate line 6980 to the route 15740 and back again as a transmitted microwave signal µWT in the direction of the second microwave and / or HF connector 15720 and is fed there to a transmission microwave analyzer µWAT, which, for example, determines relevant parameters such as amplitude, phase, spectrum, etc can. The transmission microwave analyzer µWAT preferably transmits the recorded parameters to the control device CTR via the data bus DB.

A first part of the HF signal RW radiated into the section 15740 of the exemplary differential tri-plate line 6980, which is covered with the sensor element SE, is as a reflected HF signal RWR as a result of the characteristic impedance jumps at the transitions from the undisturbed exemplary differential tri -Plate line 6980 to the route 15740 and back again as a reflected HF signal RWR in the direction of the first microwave and / or HF connector 15710 and is decoupled there by means of an HF wave coupler RWC from the transmission line and the reflection HF -Signal analyzer RWAR, which can determine relevant parameters such as amplitude, phase, spectrum, etc. Preferably, the reflection RF signal analyzer RWAR transmits the recorded parameters to the control device CTR via the data bus DB.

A second part of the HF signal RW radiated into the section 15740 of the exemplary differential tri-plate line 6980, which is covered with the sensor element SE, is transmitted as a transmitted HF signal RWT as a result of the characteristic impedance jumps at the transitions from the undisturbed one of the exemplary diffe ential tri-plate line 6980 to the route 15740 and back again as a transmitted HF signal RWT in the direction of the second microwave and / or HF connector 15720 and is fed there to a transmission HF signal analyzer RWAT, which, for example, is relevant Parameters such as amplitude, phase, spectrum etc. can be determined. Preferably, the transmission HF signal analyzer RWAT transmits the recorded parameters to the control device CTR via the data bus DB.

If the relevant parameters of the irradiated microwave signal µW and the reflected microwave signal µWR and the transmitted microwave signal µWT are known, the control device CTR can, for example, receive this data from the microwave source µWG and the reflection microwave analyzer µWAR and the transmission microwave analyzer µWAT via the Data bus DB receives, close to the third absorbed portion of an absorbed microwave signal µWA of the microwave signal µW. The carrier material TM of the sensor element SE and/or the paramagnetic centers and/or the NV centers NVZ of the crystals and/or diamonds DM, which are embedded in the carrier material TM of the sensor element SE, then typically influence this absorbed microwave signal μWA. Therefore, the absorbed microwave signal μWA typically depends on the quantum states of the paramagnetic centers and/or the NV centers NVZ of the crystals and/or diamonds DM, which are embedded in the carrier material TM of the sensor element SE. It is therefore possible that the absorbed microwave signal µWA depends on the intensity of a pump radiation LB, which irradiates the paramagnetic centers and/or the NV centers NVZ of the crystals and/or diamonds DM with electromagnetic radiation of a pump radiation wavelength λ _pmp , and then additionally of physical parameters of physical quantities, such as magnetic flux densities, which influence the paramagnetic centers and/or the NV centers NVZ of the crystals and/or diamonds DM.

If the relevant parameters of the irradiated HF signal RW and the reflected HF signal RWR and the transmitted HF signal RWT are known, a control device CTR can, for example, receive this data from the HF source RFG and the reflected HF signal analyzer RWAR and the transmission HF signal analyzer RWAT receives a conclusion via the data bus DB on a third absorbed portion of an absorbed HF signal RWA of the HF signal RW. The carrier material TM of the sensor element SE and/or the paramagnetic centers and/or the NV centers NVZ of the crystals and/or diamonds DM, which are embedded in the carrier material TM of the sensor element SE, then typically influence this absorbed RF signal RWA . Therefore, the absorbed RF signal RWA typically depends on the quantum states of the paramagnetic centers and/or the NV centers NVZ of the crystals and/or diamonds DM, which are embedded in the carrier material TM of the sensor element SE. It is therefore possible that the absorbed RF signal RWA has the intensity of a pump radiation LB, which irradiates the paramagnetic centers and/or the NV centers NVZ of the crystals and/or diamonds DM with electromagnetic radiation of a pump radiation wavelength λ _pmp , and then additionally depends on physical parameters of physical quantities, such as magnetic flux densities, which influence the paramagnetic centers and/or the NV centers NVZ of the crystals and/or diamonds DM. By means of computer-implemented methods, the pattern recognition device MEV and/or the control device CTR can estimate and/or determine values of physical parameters using this data, which are based on these and other data determined in this system. The program code for such computer-implemented methods, which can in particular include methods for pattern recognition, is preferably stored in memories (RAM, NVM) of the device. The document presented here refers to the pattern recognition and artificial intelligence methods mentioned elsewhere in this document. In particular, the emulation of a computer-implemented neural network model and/or the application of computer-implemented deep learning methods and computer-implemented machine learning methods by the pattern recognition device MEV and/or the control device CTR may include such computer-implemented methods. The control device CTR preferably uses at least part of the data recorded in the device to generate a feature vector, to which the control device then applies a computer-implemented pattern recognition method.

The application of the technical teachings of the 97 and 98 on those of the other figures, especially the one 1, 6, 8, 11 to 14, 16 to 20, 27, 29 to 35, 38 to 44, 47 to 84, 89, 91, 96, 97 and the description is an express part of the disclosure of the document presented here. It is easy for a knowledgeable person to install the additional components 98 in comparison to 78 in the same way additionally in the corresponding aforementioned figures, especially the particularly relevant ones 1, 6, 17, 49, 69, 70, 71, 73 to 81 and 98 , to be inserted in an analogous manner if necessary and thus arrive at the technical teaching disclosed here. The same applies to components that are missing in the corresponding figure, but in the 98 available. In this respect, the figures shown here are only examples for explanation, the technical teachings of which can be combined with each other where appropriate. A technically competent person can check the usefulness of these combinations.

Reference symbol list

1

Light sensor array 1 with electronics (control, etc.). Preferably, the light sensor array 1 comprises a CCD camera sensor or the like, each CCD pixel of the CCD camera sensor representing a light sensor of the light sensor array in the sense of the document presented here;

2

Light source 2. The light source 2 can be, for example, a laser or an LED. When supplied with electrical energy, the light source 2 preferably emits pump radiation 13 (LB) of the pump radiation wavelength λ _pmp . The document presented here also refers to the light source 2 as a pump radiation source PL with the reference symbol PL;

3

lighting optics;

4

optical filter (short pass);

5

Sensor layer 5. 25 shows an exemplary structure of the sensor layer 5 for irradiation by an external pump light source 2 as a pump radiation source PL;

6

optical filter (long pass) 6. The optical filter 6 has the function of the dichroic mirror / optical filter F1 for separating the fluorescence radiation FL from the pump radiation LB;

7

imaging optics 7;

8th

Housing 8. For example, the housing 8 of the magnetic field camera can be a 3D printed housing. The housing 8 of the magnetic field camera can, for example, comprise an upper housing part 40 of the housing 8 and a lower housing part 41 of the housing 8;

9

Carrier material I 9. Typically, the carrier material I 9 comprises a partial device of the lower housing part 41 of the housing 8 of the magnetic field camera and/or the material of a circuit carrier (PCB) and/or a semiconductor wafer part (Die) and/or a micro-integrated semiconductor circuit and /or a micromechanical device and/or a microelectromechanical device and/or a microoptical device and/or a microelectrooptical device and/or a microfluidic device etc. and/or combinations thereof;

10

mirroring 10;

11

Layer 11 with crystals and/or nanocrystals 66 with paramagnetic centers. This layer preferably comprises a plurality of crystals and/or nanocrystals 66, which are preferably oriented completely randomly, uniformly distributed and whose density is preferably essentially not dependent on the position in the layer. Preferably the crystals and/or nanocrystals 66 are diamonds. The paramagnetic centers are preferably NV centers. This diamond material is preferably NV-rich diamond dust in an optically transparent composite material that is essentially transparent for electromagnetic radiation, for example pump radiation 13, with pump radiation wavelength λ _pmp and for electromagnetic radiation with fluorescent radiation wavelength λ _fl . Typically, the sensor layer 5 comprises this layer 11. The layer 11 preferably comprises a solidified colloidal mixture KL of a carrier material TM cured by means of electromagnetic radiation of a curing wavelength λ _H. A large number of diamonds DM or nanodiamonds and/or crystals are preferably embedded in the carrier material TM. One or more or all diamonds DM or nanodiamonds of these diamonds DM and/or crystals preferably have NV centers NVZ and/or other paramagnetic centers. The NV centers NVZ of the carrier material TM and/or the other paramagnetic centers of the carrier material TM preferably emit at least one fluorescent radiation FL when irradiated with pump radiation LB;

12

Carrier material II 12. The carrier material II 12 can be, for example, a glass plate 46, which simultaneously irradiates the layer 11 with crystals and / or nanocrystals 66 with paramagnetic centers with pump radiation 13 with the pump radiation wavelength λ _pmp as an exemplary optical functional element. For the purposes of the document presented here, the carrier material II 12 is an optical fiber LWL;

13

Pump radiation 13 with the pump radiation wavelength λ _pmp . The document presented here also designates the pump radiation 13 with the reference symbol LB (like laser beam);

14

Fluorescence radiation 14 with the fluorescence radiation wavelength λ _fl . The document presented here also designates the fluorescent radiation 14 with the reference symbol FL (like fluorescence);

15

Evaluation electronics 15 of the light sensor array 1;

16

preferably flat surface 16;

17

ferromagnetic material 17;

18

Defects in the exemplary ferromagnetic material 17 of 26 ;

19

auxiliary magnet 19;

20

exemplary direction of movement 20;

21

magnetic field camera head 21;

22

Underside of the sensor layer 5 in the direction away from the light sensor array 1;

23

Top of the sensor layer 5 in the direction of the light sensor array 1;

24

Bottom 24 of the housing 8 of the magnetic field camera;

25

Sensor layer thickness 25 of the sensor layer 5;

26

the distance 26 between the sensor layer 5 and the outer surface of the housing 8 of the magnetic field camera in the area of the sensor layer 5. In the examples presented here, the distance between the sensor layer 5 and the surface 34 of the measurement object 17 was less than 1 mm;

27

electromagnetic radiation 27 of other wavelength ranges 27;

28

Computer system 28 for operating the magnetic field camera head 21;

29

Data bus 29 for establishing the data connection between processing circuit 30 for the output signals 31 of the light sensors of the light sensor array 1 of the magnetic field camera head 21 and computer system 28 for operating the magnetic field camera head 21;

30

Processing circuit 30 for the output signals 31 of the light sensors of the light sensor array 1 of the magnetic field camera head 21. The processing circuit 30 is preferably part of the evaluation electronics 15 of the magnetic field camera head 21;

31

Output signals 31 of the light sensors of the light sensor array 1 of the magnetic field camera head 21;

32

Screen 32 of the magnetic field camera;

33

Computer core 33 of the computer system 28 for operating the magnetic field camera head 21 of the magnetic field camera with at least one CPU;

34

Surface 34 of the measurement object. In 16 surface of the ferromagnetic material 17;

35

Control device 35 for the electromagnets of the auxiliary magnets 19 of the magnetic field camera head 21;

36

interface circuit 36;

37

Permanent magnets 37 for testing purposes of the magnetic field camera and/or the magnetic field camera head 21;

38

Glass plate 38. The technical teaching of the document presented here uses the glass plate 38 in some forms as an optical fiber LWL;

39

Two-dimensional false-color magnetic flux density image of the distribution of the magnetic flux density of four permanent magnets 37 on a glass plate 38, which was determined with a magnetic field camera with a magnetic field camera head 21 in accordance with the technical teaching presented here.

40

upper housing part 40 of the housing 8 of an exemplary magnetic field camera head 21 of an exemplary magnetic field camera. For example, it can be an upper 3D printed housing part of the exemplary 3D printed housing 8;

41

lower housing part 41 of the housing 8 of an exemplary magnetic field camera head 21 of an exemplary magnetic field camera. For example, it can be a lower 3D printing housing part of the exemplary 3D printing housing 8;

42

Power supply cable 42 for the PCB 43 with the LEDs 44 of an exemplary magnetic field camera head 21 of an exemplary magnetic field camera;

43

Circuit board (PCB) 43 for the LEDs 44 of an exemplary magnetic field camera head 21 of an exemplary magnetic field camera and its power supply 45;

44

LED 44 for irradiating the sensor layer 5 via illumination optics 3, for example in the form of a glass plate 46 as an exemplary optical functional element with pump radiation 13 (LB) with the pump radiation wavelength λ _pmp . In the example, the glass plate 46 serves as an optical functional element of an optical fiber LWL. The edge of the glass plate 46 represents the second end ELWL2 of the optical waveguide LWL, here the second end ELWL2 of the glass plate 46, via which the LEDs 44 as pump radiation sources (2, PL) pump the pump radiation 13 (LB) with the pump radiation wavelength λ _pmp into the optical waveguide LWL, here the glass plate 46, shine. The pump radiation 13 (LB) with the pump radiation wavelength λ _pmp then emerges via the surface of the glass plate 46 as the first end ELWL1 of the optical fiber LWL, here the first end ELWL1 of the glass plate 46, out of the optical fiber LWL, here the glass plate 46, and into that Carrier material TM of the solidified colloidal mixture KL (layer 11) with the diamonds DM and / or nanodiamonds or the diamonds and / or crystals ND with the paramagnetic centers and / or NV centers NVZ. The surface of the glass plate 46 represents the first end surface EF1 of the optical waveguide LWL, via which the LEDs 44 as pump radiation sources (2, PL) enter the sensor element SE on the surface of the glass plate 46 (optical waveguide LWL). In the example of the magnetic field camera with the magnetic field sensor head 21, the optical path to the light sensor array 1 represents the second optical waveguide LWL2 in the sense of the document presented here.

45

Power supply 45 of the LEDs 44 of the exemplary circuit board (PCB) 43 of the magnetic field sensor head 21 of the magnetic field camera;

46

Glass plate 46 as an exemplary optical functional element and exemplary optical waveguide LWL, which irradiate the paramagnetic centers of the layer 11 with pump radiation 13 with the pump radiation wavelength λ _pmp . The layer 11 preferably comprises crystals and/or nanocrystals 66 with these paramagnetic centers, which are preferably NV centers. The layer 11 preferably comprises a hardened colloidal mixture KL made of a carrier material TM and diamonds DM and/or diamond nanocrystals ND with one or more paramagnetic centers and/or one or more NV centers NVZ. The glass plate 46 preferably forms the flat surface 16 of the lower housing part 41 of the housing 8 of the magnetic field sensor head 21 of the exemplary magnetic field camera. The glass plate 46 here also has the function of the carrier material II 12. In the sense of the document presented here, the glass plate 46 of the magnetic field sensor head 21 of the exemplary magnetic field camera is therefore an optical fiber LWL in which the first end surface ELWL1 is perpendicular to the second end surface ELWL2. From the first end surface ELWL1, of the optical waveguide LWL, here the glass plate 46, the pump radiation LB passes into the carrier material TM of the colloidal mixture KL of the layer 11. From the first end surface ELWL1, of the optical waveguide LWL, here the glass plate 46, the curing radiation with the hardening wavelength λ _H passes from the optical waveguide LWL into the carrier material TM of the colloidal mixture KL of the layer 11. The pump radiation LB and/or the curing radiation with the curing wavelength λ _H is fed in via the second end surface ELWL2 of the optical waveguide LWL, here the glass plate 46;

47

dichroic mirrored optional layer 47. This layer has the function of the optical filter 6 and the dichroic mirror/optical filter F1 for separating the fluorescent radiation FL(14) from the pump radiation LB(13);

48

glue 48;

49

second heat sink 49 for cooling the circuit board (PCB) 43 of the magnetic field sensor head 21 of the exemplary magnetic field camera for the LEDs 44 and their power supply 45 and the LEDs 44. The second heat sink 49 preferably comprises copper as the heat sink material of the second heat sink 49;

50

first heat sink 50 for cooling the evaluation electronics 15 of the light sensor array 1 of the magnetic field sensor head 21 of the exemplary magnetic field camera and/or the light sensor array 1. The first heat sink 50 preferably comprises copper as the heat sink material of the first heat sink 50;

51

cooling fins 51, which are thermally coupled to the first heat sink 50 of the magnetic field sensor head 21 of the exemplary magnetic field camera, for example by means of a thermal paste 53 or the like;

52

Cover 52 of the housing 8 of the magnetic field sensor head 21 of the exemplary magnetic field camera;

53

Thermal paste 53 of the magnetic field sensor head 21 of the exemplary magnetic field camera;

54

Camera housing 54 of the fluorescence camera with the light sensor array 1 with its evaluation electronics 15 and the imaging optics 7. It is an exemplary housing 8 of the magnetic field sensor head 21 of the exemplary magnetic field camera;

55

Energy supply line 55 for supplying energy to the circuit board (PCB) 43 of the magnetic field sensor head 21 of the exemplary magnetic field camera for the LEDs 44 and their energy supply 45 and the LEDs 44;

56

Connector 56 for the power supply line 55 for supplying power to the circuit board (PCB) 43 of the magnetic field sensor head 21 of the exemplary magnetic field camera for the LEDs 44 and their power supply 45 and the LEDs 44;

57

elastic and thermally conductive material 57 of the magnetic field sensor head 21 of the exemplary magnetic field camera;

58

Thermally conductive insulation film 58 of the magnetic field sensor head 21 of the exemplary magnetic field camera;

59

LED series resistors 59 of the LEDs 44 on the circuit board (PCB) 43 of the magnetic field sensor head 21 of the exemplary magnetic field camera for the LEDs 44;

60

electronic components 60 for the power supply of the LEDs 44 on the circuit board (PCB) 43 of the magnetic field sensor head 21 of the exemplary magnetic field camera;

61

Voltage regulator and/or control transistor 61. The voltage regulator and/or control transistor 61 is typically an electronic component 60 for the power supply of the LEDs 44 on the circuit board (PCB) 43 of the magnetic field sensor head 21 of the exemplary magnetic field camera. The voltage regulator and/or control transistor 61 is typically the actuator of the voltage regulation of the power supply of the LEDs 44 on the circuit board (PCB) 43 of the magnetic field sensor head 21 of the exemplary magnetic field camera;

62

Coding plug 62 for changing analog operating parameters of the electronic circuit on the circuit board (PCB) 43 of the magnetic field sensor head 21 of the exemplary magnetic field camera;

63

Fastening means for the exemplary attachment of the auxiliary magnet 19 to the cover 52 of the housing of the magnetic field sensor head 21 of the exemplary magnetic field camera;

64

Access opening 64 in the lower housing part 41 of the housing 8 on the underside of the housing 8 of the magnetic field sensor head 21 of the exemplary magnetic field camera, which allows the change in the coding position of the jumper of the coding plug 62 and thus a change in analog operating parameters of the electronic circuit on the circuit board (PCB) 43 closing the housing 8 of the magnetic field sensor head 21 of the exemplary magnetic field camera. For this, however, the coding plug 64 must be on the other side of the circuit board (PCB) 43 of the magnetic field sensor head 21 of the exemplary magnetic field camera than in the 30 , 31 , 35 , 38 , 39 shown. When developing the technical teaching of this document, it was recognized that coding on this side of the circuit board (PCB) 43 instead of using jumpers and coding plugs 62 using solder bridges is more efficient and more durable;

65

Opening 65 in the circuit board (PCB) 43 of the magnetic field sensor head 21 of the exemplary magnetic field camera for the LEDs 44. The opening 65 serves to ensure that the fluorescent radiation 14 of the paramagnetic centers, for example the NV centers, in the layer 11 of the sensor layer 5 on the Underside of the glass plate 46 of the magnetic field sensor head 21 of the exemplary magnetic field camera can reach the light sensor array 1 of the magnetic field sensor head 21 of the exemplary magnetic field camera through the glass plate 46 and the opening in the circuit board (PCB) 43

66

Crystal, preferably nano-crystal 66 and/or diamond with preferably several paramagnetic centers and/or one or more NV centers NVZ;

67

first surface 67 of the first optical functional element (glass plate 46 of the magnetic field sensor head 21 of the exemplary magnetic field camera);

68

second surface 68 of the first optical functional element (glass plate 46 of the magnetic field sensor head 21 of the exemplary magnetic field camera);

69

Diffuser layer 69. In the sense of the technical teaching of the document presented here, the diffuser layer 69 can also be a diffuser structure on the first surface 67 or on the second surface 68 of the first optical functional element, in particular the glass plate 46 of the magnetic field sensor head 21 of the exemplary magnetic field camera be. The diffuser layer 69 is preferably located on the first surface 67 of the first optical functional element of the sensor layer 5 - here the glass plate 46 of the magnetic field sensor head 21 of the exemplary magnetic field camera;

70

connecting cable for the LEDs 44;

71

Connection plug and/or connection socket 71 of the microwave signal µW and/or the HF signal RW to a waveguide (1380, 1880, 2380, 6830, 6980) on the surface of the carrier substrate 1360. In the case of connecting a differential microstrip waveguide 6830 or a differential tri -Plate line 6980, the connection plug and/or connection socket 71 is preferably designed as a triax plug or triax socket. Information about this can be found on the Internet at the URL https://de.wikipedia.org/wiki/Triaxialkabel. The technical teaching disclosed here therefore describes a connection of a waveguide to the carrier substrate 1360 by means of a triax cable and, if necessary, the associated triax connections.

72

Memory 72 and/or storage medium of the computer core 33 in the computer system 38; The memory 72 and/or the storage medium may include volatile memory RAM and non-volatile memory ROM.

λfl

Fluorescence radiation wavelength λ _fl of the fluorescence radiation 14 (FL);

λpmp

Pump radiation wavelength λ _pmp of the pump radiation 13 (LB);

140

Providing 140 an optical waveguide LWL, the optical waveguide LWL having a first end ELWL1 and a second end ELWL2;

145

Providing 145 a liquid carrier material TM that can be hardened by means of electromagnetic radiation of a curing wavelength λ _H , a plurality of diamonds DM or nanodiamonds being embedded in the carrier material (TM) and one or more or all diamonds DM or nanodiamonds of these diamonds being DM NV- Centers NVZ and/or other paramagnetic centers and wherein the NV centers NVZ of the carrier material TM and/or the other paramagnetic centers of the carrier material TM emit at least one fluorescent radiation FL upon irradiation with pump radiation LB;

145

if necessary, pre-hardening 147 (pre-bake) of the sensor element SE through a previous temperature treatment;

150

Wetting 150 the first end of the optical waveguide TM to a wetting length L _B with the carrier material TM, which has the plurality of embedded diamonds DM or nanodiamonds and / or crystals with one or more NV centers and / or one or more paramagnetic centers;

155

Feeding 155 electromagnetic radiation into the second end ELWL2 of the optical waveguide LWL, the wavelength of this electromagnetic radiation, the curing wavelength λ _H , being selected so that the carrier material TM hardens at the second end ELWL2 of the optical waveguide LWL and turns into a solid, the hardened Carrier material TM forms the sensor element SE;

160

Removing 160 the uncured carrier material TM, in particular by means of a solvent, the remaining film of the carrier material TM forming the sensor element at the first end of the optical waveguide LWL;

165

if necessary, post-hardening 165 (post-bake) of the sensor element SE through a subsequent temperature treatment;

167

Providing 167 a sensor head housing GH of the sensor head SK and an excitation source for magnetic excitation H, in particular a permanent magnet PM (in application example I);

170

Installation 170 of the optical fiber LWL with the newly formed sensor element SE in the channel KN of the sensor head housing GH of the sensor head SK and installation of an excitation source for magnetic excitation H in the sensor head housing GH of the sensor head SK (in application example I);

180

Use 180 of the sensor head SK for spatially resolved measurement of the magnetic properties of the material of a workpiece near the surface OF of the workpiece (in application example I), the spatial resolution being better than 500µm and/or better than 200µm and/or better than 100µm and/or is better than 50µm and/or better than 20µm and/or better than 10µm. Resolution is the possibility of detecting two adjacent disturbances in the magnetic properties of a surface OF a workpiece through an extremum of 5% of the signal amplitude if they are spaced apart according to the resolution. Such disturbances can be, for example, cracks, cavities, material inhomogeneities, etc.

182

providing 182 a housing GH of the motor;

185

Installation 185 of the optical fiber LWL with the newly formed sensor element SE in the opening OF of the housing GH of the motor;

187

Use 187 of the optical fiber LWL with the newly formed sensor element SE for measuring the magnetic flux density B within the air gap LS of the motor or in the stray field BSTR of the magnetic field in the air gap LS.

190

if necessary, determination 190 of the time of the zero crossing of the amount of the magnetic flux density B of the magnetic flux density B within the air gap LS of the motor or in the stray field BSTR of the magnetic field in the air gap LS and/or if necessary, determination 190 of the amount of the magnetic flux density B of the magnetic flux density B within the air gap LS of the motor or in the stray field BSTR of the magnetic field in the air gap LS.

193

if necessary, determine 193 or estimate the position of the magnetic field within the air gap of the motor.

195

If necessary, commutation 195 of the energization of one or more stator coils of the motor and / or one or more rotor coils of the motor depending on a) on the determined time transitions of the zero crossing of the amount of the magnetic flux density B of the magnetic flux density B within the air gap LS of the motor or in the stray field BSTR of the magnetic field in the air gap LS and / or b) from the determined amount of the magnetic flux density B of the magnetic flux density B within the air gap LS of the motor or in the stray field BSTR of the magnetic field in the air gap LS and / or from the determined or estimated position of the magnetic field within the air gap of the engine

511

Diagram of the resonance lines of the portion with microwave modulation frequency f _µW of the intensity I of the fluorescence radiation _FL of a diamond single crystal provided with NV centers as a function of the microwave frequency ω _µW and the magnetic flux density B. The microwave frequency ω _µW is in the X -Axis of diagram 511 plotted. The magnetic flux density B is plotted on the Y-axis of the diagram 511 in arbitrary units (“arbitrary units” or abbreviated “au”). In the example, a single diamond crystal in [111] is aligned with the direction of the magnetic flux density B of a magnetic field. The behavior shown in diagram 511 is known from the prior art;

512

Resonance line of NV centers of a diamond single crystal for the spin quantum number m _s =-1, which is aligned in the [111] direction with respect to the magnetic flux density B of the magnetic field and where the NV centers of the diamond single crystal interacting at this resonance line are in the [ 111] direction of the diamond single crystal are aligned. The B component of the microwave field is oriented perpendicular to the magnetic flux density B of the magnetic field. The resonance line corresponds to the spin quantum number m _s =-1;

513

Resonance of a single crystal that is aligned with respect to the magnetic field in the [111] direction and where the NV centers of the diamond single crystal interacting at this resonance line are in one of the three other crystal directions of the diamond single crystal compared to the [111] direction of the diamond single crystal are aligned. The B component of the microwave field is oriented perpendicular to the magnetic flux density B of the magnetic field. The resonance line corresponds to the spin quantum number m _s =-1

514

Resonance line of NV centers of a diamond single crystal for the spin quantum number m _s =+1, which is aligned in the [111] direction with respect to the magnetic flux density B of the magnetic field and where the NV centers of the diamond single crystal interacting at this resonance line are in one of the three other crystal directions of the diamond single crystal are aligned opposite the [111] direction of the diamond single crystal. The B component of the microwave field is oriented perpendicular to the magnetic flux density B of the magnetic field. The resonance line corresponds to the spin quantum number m _s =+1;

515

Resonance line of NV centers of a diamond single crystal for the spin quantum number m _s =+1, which is aligned in the [111] direction with respect to the magnetic flux density B of the magnetic field and where the NV centers of the diamond single crystal interacting at this resonance line are in the [ 111] direction of the diamond single crystal are aligned. The B component of the microwave field is oriented perpendicular to the magnetic flux density B of the magnetic field. The resonance line corresponds to the spin quantum number m _s =+1;

520

Diagram of the resonance of the intensity I _is the fluorescence radiation FL or the change in the intensity I _is the fluorescence radiation FL of a collective of diamond crystals, which are oriented differently in space randomly and essentially equally distributed, depending on the microwave frequency ω _µW and the magnetic Flux density B. The microwave frequency ω _µW is plotted on the x-axis of the diagram. The magnetic flux density B is plotted on the Y axis in arbitrary units. (English: “arbitrary units” or abbreviated “au”), In the example, the diamonds of the large number of diamond crystals are aligned in different directions with respect to the magnetic field. This behavior is known from the prior art.

522

lower resonance edge 522. This is the lower resonance edge of the intensity I _is the fluorescence radiation FL or the change in intensity I _is the fluorescence radiation FL of the resonance field of the intensity I _is the fluorescence radiation FL of a collective of diamond crystals that are randomly and essentially uniformly distributed to one another are oriented differently in space, depending on the microwave frequency ω _µW and the magnetic flux density B. The microwave frequency ω _µW is plotted on the X-axis of the diagram. The magnetic flux density B is plotted on the Y axis in arbitrary units. (English: “arbitrary units” or abbreviated “au”), In the example, the diamonds of the large number of diamond crystals are aligned in different directions with respect to the magnetic flux density B of the magnetic field.

523

lower middle resonance edge 523. This is the lower middle resonance edge of the intensity I _is the fluorescence radiation FL or the change in intensity I _is the fluorescence radiation FL of the resonance field of the intensity I _is the fluorescence radiation FL of a collective of diamond crystals that are random to one another and in Essentially equally distributed, they are oriented differently in space, depending on the microwave frequency ω _µW and the magnetic flux density B. The microwave frequency ω _µW is plotted on the X-axis of the diagram. The magnetic flux density B is plotted on the Y axis in arbitrary units. (English: “arbitrary units” or abbreviated “au”), In the example, the diamonds of the large number of diamond crystals are aligned in different directions relative to the magnetic flux density of the magnetic field.

524

upper middle resonance edge 524. This is the upper middle resonance edge of the intensity I _is the fluorescence radiation FL or the change in intensity I _is the fluorescence radiation FL of the resonance field of the intensity I _is the fluorescence radiation FL of a collective of diamond crystals that are random to one another and in Essentially equally distributed, they are oriented differently in space, depending on the microwave frequency ω _µW and the magnetic flux density B. The microwave frequency ω _µW is plotted on the X-axis of the diagram. The magnetic flux density B is plotted on the Y axis in arbitrary units. (English: “arbitrary units” or abbreviated “au”), In the example, the diamonds of the large number of diamond crystals are aligned in different directions relative to the magnetic flux density of the magnetic field.

525

upper resonance edge 525. This is the upper resonance edge of the intensity I _is the fluorescence radiation FL or the change in intensity I _is the fluorescence radiation FL of the resonance field of the intensity I _is the fluorescence radiation FL of a collective of diamond crystals that are randomly and essentially uniformly distributed to one another are oriented differently in space, depending on the microwave frequency ω _µW and the magnetic flux density B. The microwave frequency ω _µW is plotted on the X-axis of the diagram. The magnetic flux density B is plotted on the Y axis in arbitrary units. (English: “arbitrary units” or abbreviated “au”), In the example, the diamonds of the large number of diamond crystals are aligned in different directions relative to the magnetic flux density of the magnetic field.

526

lower resonance subfield. It is the lower resonance subfield of the intensity I _is the fluorescence radiation FL or the change in intensity I _is the fluorescence radiation FL of the resonance field of the intensity I _is the fluorescence radiation FL of a collective of diamond crystals, which are oriented differently in space randomly and essentially equally distributed are, depending on the microwave frequency ω _µW and the magnetic flux density B. The microwave frequency ω _µW is plotted on the X-axis of the diagram. The magnetic flux density B is plotted on the Y axis in arbitrary units. (English: “arbitrary units” or abbreviated “au”), In the example, the diamonds of the large number of diamond crystals are aligned in different directions relative to the magnetic flux density of the magnetic field. The lower resonance edge 522 limits the lower resonance subfield 26 to lower microwave frequencies ω _µW and to lower magnetic flux densities B. The lower middle resonance edge 523 limits the lower resonance subfield 526 towards higher microwave frequencies ω _µW and towards lower magnetic flux densities B. An offset flux density B _off further limits the lower resonance subfield 526 towards smaller magnetic flux densities B.

527

upper resonance subfield. It is the upper resonance subfield of the intensity I _is the fluorescence radiation FL or the change in intensity I _is the fluorescence radiation FL of the resonance field of the intensity I _is the fluorescence radiation FL of a collective of diamond crystals, which are oriented differently in space randomly and essentially equally distributed are, depending on the microwave frequency ω _µW and the magnetic flux density B. The microwave frequency ω _µW is plotted on the X-axis of the diagram. The magnetic flux density B is plotted on the Y axis in arbitrary units. (English: “arbitrary units” or abbreviated “au”), In the example, the diamonds of the large number of diamond crystals are aligned in different directions relative to the magnetic flux density of the magnetic field. The upper resonance edge 525 limits the upper resonance subfield 527 to lower microwave frequencies ω _µW and to higher magnetic flux densities B. The upper middle resonance edge 24 limits the upper resonance subfield 527 to higher microwave frequencies ωµ _W and to higher magnetic flux densities B. An offset flux density B _off further limits the upper resonance subfield 527 to smaller magnetic flux densities B.

528

lower resonance field. It is the lower resonance subfield of the intensity I _is the fluorescence radiation FL or the change in intensity I _is the fluorescence radiation FL of the resonance field of the intensity I _is the fluorescence radiation FL of a collective of diamond crystals, which are oriented differently in space randomly and essentially equally distributed are, depending on the microwave frequency ω _µW and the magnetic flux density B. The microwave frequency ω _µW is plotted on the X-axis of the diagram. The magnetic flux density B is plotted on the Y axis in arbitrary units. (English: “arbitrary units” or abbreviated “au”), In the example, the diamonds of the large number of diamond crystals are aligned in different directions relative to the magnetic flux density of the magnetic field. The lower resonance edge 522 limits the lower resonance field 528 to lower microwave frequencies ω _µW and to smaller magnetic flux densities B. The upper resonance edge 525 limits the lower resonance subfield 528 towards higher microwave frequencies ω _µW and towards smaller magnetic flux densities B. An offset flux density B _off further limits the lower resonance field 528 towards higher magnetic flux densities B.

529

mean resonance minimum 529. This is the mean resonance minimum of the intensity I _is the fluorescence radiation FL or the change in intensity I _is the fluorescence radiation FL of the resonance field of the intensity I _is the fluorescence radiation FL of a collective of diamond crystals that are randomly and essentially equally distributed to one another are oriented differently in space, depending on the microwave frequency ω _µW and the magnetic flux density B. The microwave frequency ω _µW is plotted on the X-axis of the diagram. The magnetic flux density B is plotted on the Y axis in arbitrary units. (English: “arbitrary units” or abbreviated “au”), In the example, the diamonds of the large number of diamond crystals are aligned in different directions relative to the magnetic flux density of the magnetic field. The resonance minimum runs between the lower middle resonance edge 523 and the upper middle resonance edge 524. An offset flux density B _off further limits the resonance minimum 529 to smaller magnetic flux densities B.

530

Tip of the V-formation 530 consisting of a lower resonance edge 522 and an upper resonance edge 525;

541

Line 541 along which the operating point of the sensor element SE moves when, for the determination of an unknown microwave frequency ω _µWnk, the device changes, for example, the effective magnetic reference flux density B _ref by changing the additional effective magnetic flux density B _adw ;

542

Intersection 542 of line 543 with lower resonance edge 522;

543

Line 543 along which the operating point of the sensor element SE moves if, for the determination of an unknown microwave frequency ω _µWnk, the device, for example, mixes a microwave signal µW with the varied microwave frequency ω _µW and thereby microwave signal components with a mixed microwave frequency of ω _{µWmix +} = within the sensor element SE ω _µWnk +ω _µW and ω _µWmix -=ω _µWnk -ω _µW . result;

545

Intersection 545 of line 543 with upper resonance edge 525;

561

upper reference line 561;

562

lower reference line 562;

563

middle reference line 563;

564

Value 564 of the magnetic flux density B ₆₁ associated with the upper reference line 561;

565

Value 565 of magnetic flux density B ₆₂ associated with lower reference line 562;

566

Difference 566 of the value of the magnetic flux density B ₆₃ associated with the middle reference line 563 minus the value 565 of the magnetic flux density B ₆₂ associated with the lower reference line 562;

567

slope 567 of the curve;

627

Polynomial approximation 627 of the curve;

1310

electrically conductive left signal ground surface 1310 of the exemplary slot line 1880 or the exemplary triplate line 2380 or exemplary differential triplate line 6980;

1320

electrically conductive right signal ground surface 1320 of the exemplary slot line 1880 or the exemplary triplate line 2380 or exemplary differential triplate line 6980;

1330

Signal conductor 1330 of the exemplary microstrip line 1380 or exemplary differential microstrip line 6880 or the exemplary triplate line 2380 or exemplary differential triplate line 6980;

1340

electrically essentially non-conductive left insulation surface 1340. In the sense of the document presented here, this is a clearance through which, in the case of an optical curing radiation 4910 of a curing wavelength λ _H , can emerge from the carrier substrate 1360 into a possibly applied carrier material TM and /or can pass through the pump radiation LB from the carrier substrate 1360 into an applied sensor element SE;

1350

electrically essentially non-conductive right insulation surface 1350. In the sense of the document presented here, this is a clearance through which, in the case of optical curing radiation 4910, a curing wavelength λ _H can emerge from the carrier substrate 1360 into a possibly applied carrier material TM and /or can pass through the pump radiation LB from the carrier substrate 1360 into an applied sensor element SE;

1360

Carrier substrate 1360. In particular, it can be the carrier substrate 1360 of the exemplary triplate line 2380 or the exemplary microstrip line 1380 or exemplary differential microstrip line 6880 or exemplary slot line 1880 or the exemplary triplate line 2380 or exemplary differential tri-plate line 6980 trade. Preferably, the carrier substrate 1360 is a dielectric substrate such as a ceramic with a high dielectric constant ε _r . The carrier substrate 1360 can also be a semiconductor wafer, such as a silicon wafer or a CMOS wafer or BiCMOS wafer or a wafer from a bipolar semiconductor process or a wafer from a III/V material or a wafer made of a II/VI material or a wafer made of a mixed crystal semiconductor material or a diamond wafer or a diamond-coated wafer. The carrier substrate 1360 can also be an insulation layer of a micro-integrated circuit and/or a MEMS component or a micro-optical system or a micro-electro-optical system or a microfluidic system or the like.

1370

electrically conductive back contact 1370 of the exemplary microstrip line 1380 or exemplary differential microstrip line 6880 or exemplary slot line 1880 or the exemplary triplate line 2380 or exemplary differential triplate line 6980;

1380

Single microstrip line 1380. The exemplary single microstrip line 1380 comprises a preferably not or only slightly electrically conductive carrier substrate 1360, an electrically conductive back contact 1370 on the underside of the electrically non-conductive carrier substrate 1360, an electrically conductive signal line 1330 on the top of the electrically non-conductive carrier substrate 1360 An essentially electrically non-conductive left insulation surface 1340 separates the electrically conductive signal line 1330 from other circuit parts. In addition, an electrically essentially non-conductive right insulation surface 1350 separates the electrically conductive signal line 1330 from other circuit parts. Preferably, individual microstrip line 1380 has a characteristic impedance in relation to the electrically conductive signal line 1330 as the “hot” inner conductor and the electrically conductive rear contact 1370 as the ground electrode;

1410

left sensor element SE (1410) - to the left of the electrically conductive signal line 1330 on the electrically essentially non-conductive left insulation surface 1340 of the exemplary microstrip line 1380 or - to the left of the electrically conductive left signal line 6810 on the electrically essentially non-conductive left insulation surface 1340 of the exemplary differential microstrip line 6880 or - to the left of the electrically conductive signal line 1330 in the non-conductive left insulation gap 2340 between the electrically conductive left signal ground surface 1310 of the exemplary triplate line 2380 and the electrically conductive signal line 1330 or - to the left of the electrically conductive left signal line 6810 in the non-conductive left insulation gap 2340 between the electrically conductive left signal ground surface 1310 of the exemplary differential triplate line 6980 and the electrically conductive left signal line 6810 of the exemplary differential triplate line 6980 or - to the left of the slot 1840 of the slot line 1880 on the electrically conductive left signal ground surface 1310 of the exemplary slot line 1880;

1420

middle sensor element SE(1420) on the electrically conductive signal line 1330 of the exemplary triplate line 2380 or in the gap 6840 between the electrically conductive left signal line 6810 of the differential signal line 6830 of the exemplary differential triplate line 6980 and that of the electrically conductive right signal line 6820 the differential signal line 6830 of the exemplary differential triplate line 6980 or on the electrically conductive signal line 1330 of the exemplary microstrip line 1380 or in the gap 6840 between the electrically conductive left signal line 6810 of the differential signal line 6830 of the exemplary differential microstrip line 6880 and that of the electrically conductive right signal line 6820 of the differential signal line 6830 of the exemplary differential microstrip line 6880 or in the slot 1840 of the slot line 1880;

1430

right sensor element SE (1430) - to the right of the electrically conductive signal line 1330 on the electrically essentially non-conductive right insulation surface 1350 of the exemplary microstrip line 1380 or - to the right of the electrically conductive right signal line 6820 on the electrically essentially non-conductive right insulation surface 1350 of the exemplary differential microstrip line 6880 or - to the right of the electrically conductive signal line 1330 in the non-conductive right insulation gap 2350 between the electrically conductive right signal ground surface 1320 of the exemplary triplate line 2380 and the electrically conductive signal line 1330 or - to the right of the electrically conductive right signal line 6820 in the non-conductive right insulation gap 2350 between the electrically conductive right signal ground surface 1320 of the exemplary differential triplate line 6980 and the electrically conductive right signal line 6820 of the exemplary differential triplate line 6980 or - to the right of the slot 1840 of the slot line 1880 on the electrically conductive right signal ground surface 1320 of the exemplary slot line 1880;

1440

Direction of the vector 1440 of the magnetic flux density B _µW of the microwave field of the microwave signal µW, a) which the microwave signal source µWG feeds into the signal line 1330, in the area of the sensor element SE, if the sensor element SE is placed to the left of the signal line 1330 and it is a microstrip line 1380 , or b) that the microwave signal source µWG feeds into the signal line 1330, in the area of the sensor element SE, if the sensor element SE is placed to the left of the signal line 1330 and it is a triplate line 2380, or c) that the microwave signal source µWG feeds into the slot 1840 of the slot line 1880, in the area of the sensor element SE, if the sensor element SE is placed in the slot 1840 of the slot line 1880 and it is a slot line 1880;

1450

Direction of the vector 1450 of the magnetic flux density B _µW of the microwave field of the microwave signal µW, a) which the microwave signal source µWG feeds into the signal line 1330, in the area of the sensor element SE, if the sensor element SE is placed on the signal line 1330 and it is a microstrip line 1380 , or b) that the microwave signal source µWG feeds into the signal line 1330, in the area of the sensor element SE, if the sensor element SE is placed on the signal line 1330 and it is a triplate line 2380, or c) that the microwave signal source µWG feeds into the slot line 1880, in the area of the sensor element SE, if the sensor element SE is placed on the electrically conductive left signal ground surface 1310 and it is a slot line 1880, or d) the microwave signal source µWG feeds into the slot line 1880, in the area of Sensor element SE, if the sensor element SE is placed on electrically conductive right signal ground surface 1320 and it is a slot line 1880;

1460

Direction of the vector 1460 of the magnetic flux density B _µW of the microwave field of the microwave signal µW, a) which the microwave signal source µWG feeds into the signal line 1330, in the area of the sensor element SE, if the sensor element SE is placed to the right of the signal line 1330 and it is a microstrip line 1380 , or b) that the microwave signal source µWG feeds into the signal line 1330, in the area of the sensor element SE, if the sensor element SE is placed to the right of the signal line 1330 and it is a triplate line 2380, or c) that the microwave signal source µWG feeds into the slot 1840 of the slot line 1880, in the area of the sensor element SE, if the sensor element SE is placed in the slot 1840 of the slot line 1880 and it is a slot line 1880;

1710

Sensor element SE(1710) that surrounds the electrically conductive signal line 1330. In the broadest sense, the sensor element SE(1710) is a combination of the sensor elements 1410, 1420 and 1430;

1840

Slot 1840 of the slot line 1880. The document presented here also refers to the slot 1840 of a slot line 1880 as clearance of a slot line 1880. The slot 1840 of the slot line 1880 is a non-conductive insulation gap within the meaning of this document. In the sense of the document presented here, this is a clearance through which, in the case of optical curing radiation 4910, a curing wavelength λ _H can emerge from the carrier substrate 1360 into a possibly applied carrier material TM and/or through the pump radiation LB from the carrier substrate 1360 can pass into an applied sensor element SE;

1880

Slot line 1880. The exemplary slot line 1880 comprises a preferably not or only slightly electrically conductive carrier substrate 1360, an electrically conductive back contact 1370 on the underside of the electrically non-conductive carrier substrate 1360, an electrically conductive left signal ground surface 1310 of the exemplary slot line 1880 on the top of the electrically non-conductive conductive carrier substrate 1360 and an electrically conductive right signal ground surface 1320 of the exemplary slot line 1880 on the top of the electrically non-conductive carrier substrate 1360. An electrically essentially non-conductive left insulation surface 1340 separates the electrically conductive signal line 1330 from other circuit parts. In addition, an electrically substantially non-conductive slot 1840 of the slot line 1880 separates the electrically conductive left signal ground surface 1310 of the exemplary slot line 1880 from the electrically conductive right signal ground surface 1320 of the exemplary slot line 1880. Preferably, slot line 1880 points relative to the electrically conductive left signal ground surface 1310 of the example Slot line 1880 and the electrically conductive right signal ground surface 1320 of the exemplary slot line 1880 as a “hot” outer conductor and the electrically conductive rear contact 1370 as a ground electrode have a wave resistance;

2210

Sensor element SE (2210) covering the slot 1840 of the slot line 1880;

2340

electrically essentially non-conductive left insulation gap 2340. In the sense of the document presented here, this is a clearance through which, in the case of optical curing radiation 4910, a curing wavelength λ _H can emerge from the carrier substrate 1360 into a possibly applied carrier material TM and /or can pass through the pump radiation LB from the carrier substrate 1360 into an applied sensor element SE;

2350

electrically essentially non-conductive right insulation gap 2350. In the sense of the document presented here, this is a clearance through which, in the case of optical curing radiation 4910, a curing wavelength λ _H can emerge from the carrier substrate 1360 into a possibly applied carrier material TM and /or can pass through the pump radiation LB from the carrier substrate 1360 into an applied sensor element SE;

2380

Tri-plate line 2380. The exemplary tri-plate line 2380 comprises a preferably not or only slightly electrically conductive carrier substrate 1360, an electrically conductive back contact 1370 on the underside of the electrically non-conductive carrier substrate 1360, an electrically conductive left signal ground surface 1310 on the Top of the electrically non-conductive carrier substrate 1360, an electrically conductive right signal ground surface 1320 on the top of the electrically non-conductive carrier substrate 1360, an electrically conductive signal line 1330 on the top of the electrically non-conductive carrier substrate 1360 between the electrically conductive left signal ground surface 1310 and the electrically conductive right Signal ground area 1320. An electrically essentially non-conductive left insulation gap 2340 separates the electrically conductive signal line 1330 from the electrically conductive left signal ground area 1310. In addition, an electrically essentially non-conductive right insulation gap 2350 separates the electrically conductive signal line 1330 from the electrically conductive right one Signal ground surface 1320. Preferably, the tri-plate line 2380 has a wave resistance based on the electrically conductive signal line 1330 as the “hot” inner conductor and the community of electrically conductive left signal ground surface 1310, electrically conductive right signal ground surface 1320 and electrically conductive rear contact 1370 as ground electrodes;

2410

left sensor element SE(2410), which covers the non-conductive left insulation gap 2340 of the tri-plate line 2380;

2420

middle sensor element SE(2420), which covers the electrically conductive signal line 1330 of the tri-plate line 2380;

2430

right sensor element SE(2430), which covers the non-conductive right insulation gap 2350 of the tri-plate line 2380;

2510

insulation layer 2510;

2520

Flat coil 2520 as magnetic field generating means Lc;

4410

large sensor element SE (4410) into which the middle sensor element SE (1420) and the right sensor element SE (1430) and the left sensor element SE (1410) are fused;

4510

left via 4510, which connects the electrically conductive left signal ground surface 1310 of the exemplary slot line 1880 or the exemplary triplate line 2380 or the exemplary differential triplate line 6980 with the electrically conductive rear contact 1370 of the exemplary triplate line 2380 or the exemplary differential triplate line. electrically connect line 6980 or the exemplary slot line 1880;

4520

right via 4520, which connects the electrically conductive right signal ground surface 1320 of the exemplary slot line 1880 or the exemplary triplate line 2380 or the exemplary differential triplate line 6980 with the electrically conductive rear contact 1370 of the exemplary triplate line 2380 or the exemplary differential triplate line. electrically connect line 6980 or the exemplary slot line 1880;

4610

left optical waveguide LWL (4610);

4620

right optical waveguide LWL (4620);

4630

medium optical fiber optic cable LWL (4630);

4810

sensor element layer 4810;

4910

Curing radiation 4910 with the curing wavelength λ _H ;

5210

left adjustment mark 5210;

5220

right adjustment mark 5220;

6710

Terminating resistors 6710. The terminating resistors 6710 can be connected, for example, between the lines of the respective wave line and/or the lines and the electrically conductive rear contact 1370;

6810

left signal conductor 6810 of the differential signal conductor 6830;

6820

right signal conductor 6820 of the differential signal conductor 6830;

6830

differential signal conductor 6830 of the exemplary differential microstrip line 6830 or the exemplary differential triplate line 7080. The differential signal conductor 6830 can also transmit signals simultaneously in common mode and in push-pull mode, if necessary. In common mode operation, the differential signal conductor 6830 behaves like the signal conductor 1330 of the exemplary microstrip line 1380 or the exemplary triplate line 2380;

6840

electrically insulating gap 6840 between the left signal conductor 6810 and the right signal conductor 6820 of the differential signal conductor 6830. The document presented here also refers to the electrically insulating gap 6840 between the left signal conductor 6810 and the right signal conductor 6820 of the differential signal conductor 6830 as the clearance of the differential signal conductor 6830 The electrically insulating gap 6840 is a non-conductive insulation gap within the meaning of this document. In the sense of the document presented here, this is a clearance through which, in the case of optical curing radiation 4910, a curing wavelength λ _H can emerge from the carrier substrate 1360 into a possibly applied carrier material TM and/or through the pump radiation LB from the carrier substrate 1360 can pass into an applied sensor element SE;

6880

differential microstrip line 6880. The exemplary differential microstrip line 6880 comprises a preferably not or only slightly electrically conductive carrier substrate 1360, an electrically conductive back contact 1370 on the underside of the electrically non-conductive carrier substrate 1360, an electrically essentially non-conductive left insulation surface 1340 on the top of the electrically non-conductive carrier substrate 1360, electrically essentially non-conductive right insulation surface 1350 on the top of the electrically non-conductive carrier substrate 1360, a left electrically conductive signal line 6810 on the top of the electrically non-conductive carrier substrate 1360 between the electrically essentially non-conductive left insulation surface 1340 on the one hand and the electrically insulating gap 6840 between the left signal conductor 6810 and the right signal conductor 6820 of the differential signal conductor 6830 on the other hand, a right electrically conductive signal line 6820 on the top of the electrically non-conductive carrier substrate 1360 between the electrically insulating gap 6840 between the left signal conductor 6810 and the right signal conductor 6820 of the differential signal conductor 6830 on the one hand and the electrically essentially non-conductive right insulation surface 1350 on the other hand. The electrically insulating gap 6840 between the left signal conductor 6810 and the right signal conductor 6820 of the differential signal conductor 6830 electrically insulates the left signal conductor 6810 from the right signal conductor 6820 of the differential signal conductor 6830. The left signal conductor 6810 and the right signal conductor 6820 together form the differential signal conductor 6830 the differential microstrip line 6880. The document presented here refers to the electrically insulating gap 6840 between the left signal conductor 6810 and the right signal conductor 6820 of the differential signal conductor 6830 also as the clearance of the differential signal conductor 6830. The document presented here refers to the electrically insulating gap 6840 between the left Signal conductor 6810 and the right signal conductor 6820 of the differential signal conductor 6830 of the differential microstrip line 6880 also as clearance of the differential signal conductor 6830 of the differential microstrip line 6880. The document presented here refers to the electrically insulating gap 6840 between the left signal conductor 6810 and the right signal conductor 6820 of the differential signal conductor 6830 of the differential microstrip line 6880 also as clearance of the differential microstrip line 6880. The differential microstrip line 6880 can be controlled with a common mode signal, in which the same signal is fed into the left signal conductor 6810 and the right signal conductor 6820 of the differential signal conductor 6830 in a time-synchronous manner. This operating state is called common mode control with a common mode signal. The differential microstrip line 6880 can be controlled with a push-pull clock signal, in which the same signal is fed into the left signal conductor 6810 and the right signal conductor 6820 of the differential signal conductor 6830 in a time-synchronous manner, but with a different sign. This operating state is called push-pull control with a push-pull signal. Preferably, the differential microstrip line 6880, based on the differential signal conductor 6830 as the “hot” inner conductor, has a common-mode characteristic impedance for common-mode control and a differential-mode characteristic impedance for differential-mode control;

6980

differential tri-plate line 6980;

7110

left line sensor element SE(7110) on the electrically conductive left signal line 6810 of the differential signal line 6830 of the differential microstrip line 6880 of the exemplary differential triplate line 6980 or on the electrically conductive left signal line 6810 of the differential signal line 6830 of the differential microstrip line 6880;

7120

right line sensor element SE(7120) on the electrically conductive right signal line 6820 of the differential signal line 6830 of the differential microstrip line 6880 of the exemplary differential triplate line 6980 or on the electrically conductive right signal line 6820 of the differential signal line 6830 of the differential microstrip line 6880;

7140

Direction of the vector 7340 of the magnetic flux density B _µW of the microwave field of the microwave signal µW, a) which feeds the microwave signal source µWG and/or another signal source (RWG) into the left signal line 6810 of the differential signal line 6830 of the differential microwave line 6880, in the area of the left sensor element SE(1410), if it is a differential microstrip line 6880, or a) the microwave signal source µWG and/or another signal source (RWG) in the left signal line 6810 of the differential signal line 6830 of the differential microwave line 6880 of the differential tri-plate -Line 6980 feeds in, in the area of the left sensor element SE (1410), if it is a differential tri-plate line 6980;

7150

Direction of the vector 7350 of the magnetic flux density B _µW of the microwave field of the microwave signal µW, a) which feeds the microwave signal source µWG and/or another signal source (RWG) into the left signal line 6810 of the differential signal line 6830 of the differential microwave line 6880, in the area of the left line sensor element SE(7110), if it is a differential microstrip line 6880, or a) the microwave signal source µWG and/or another signal source (RWG) in the left signal line 6810 of the differential signal line 6830 of the differential microwave line 6880 of the differential tri-plate -Line 6980 feeds in, in the area of the left line sensor element SE (7110), if it is a differential tri-plate line 6980;

7160

Direction of the vector 7360 of the magnetic flux density B _µW of the microwave field of the microwave signal µW, a) which feeds the microwave signal source µWG and/or another signal source (RWG) into the left signal line 6810 of the differential signal line 6830 of the differential microwave line 6880, in the area of the middle sensor element SE(1420), if it is a differential microstrip line 6880, or a) the microwave signal source µWG and/or another signal source (RWG) in the left signal line 6810 of the differential signal line 6830 of the differential microwave line 6880 of the differential tri-plate -Line 6980 feeds in, in the area of the middle line sensor element SE (1420), if it is a differential tri-plate line 6980;

7170

Direction of the vector 7370 of the magnetic flux density B _µW of the microwave field of the microwave signal µW, a) which feeds the microwave signal source µWG and/or another signal source (RWG) into the right signal line 6820 of the differential signal line 6830 of the differential microwave line 6880, in the area of the middle sensor element SE(1420), if it is a differential microstrip line 6880, or a) the microwave signal source µWG and/or another signal source (RWG) in the right signal line 6820 of the differential signal line 6830 of the differential microwave line 6880 of the differential tri-plate -Line 6980 feeds in, in the area of the middle line sensor element SE (1420), if it is a differential tri-plate line 6980;

7180

Direction of the vector 7380 of the magnetic flux density B _µW of the microwave field of the microwave signal µW, a) which feeds the microwave signal source µWG and/or another signal source (RWG) into the right signal line 6820 of the differential signal line 6830 of the differential microwave line 6880, in the area of the right line sensor element SE(7120), if it is a differential microstrip line 6880, or a) the microwave signal source µWG and/or another signal source (RWG) in the right signal line 6820 of the differential signal line 6830 of the differential microwave line 6880 of the differential tri-plate -Line 6980 feeds in, in the area of the right line sensor element SE (7120), if it is a differential tri-plate line 6980;

7190

Direction of the vector 7390 of the magnetic flux density B _µW of the microwave field of the microwave signal µW, a) which feeds the microwave signal source µWG and/or another signal source (RWG) into the right signal line 6820 of the differential signal line 6830 of the differential microwave line 6880, in the area of the right sensor element SE(1430), if it is a differential microstrip line 6880, or a) the microwave signal source µWG and/or another signal source (RWG) in the right signal line 6820 of the differential signal line 6830 of the differential microwave line 6880 of the differential tri-plate -Line 6980 feeds in, in the area of the right sensor element SE (1430), if it is a differential tri-plate line 6980;

13320

enlarged middle sensor element SE(13320). The enlarged middle sensor element SE(13320) corresponds to a middle sensor element SE(1420), which also has properties of the neighboring sensor elements, for example the left line sensor element SE(7110) and the right line sensor element SE(7120). The enlarged middle sensor element SE (13320) is located essentially on the electrically conductive signal line 1330 of the exemplary triplate line 2380 or in the gap 6840 between the electrically conductive left signal line 6810 of the differential signal line 6830 of the exemplary differential triplate line 6980 and the the electrically conductive right signal line 6820 of the differential signal line 6830 of the exemplary differential triplate line 6980 or on the electrically conductive signal line 1330 of the exemplary microstrip line 1380 or in the gap 6840 between the electrically conductive left signal line 6810 of the differential signal line 6830 of the exemplary differential microstrip line 6880 and that of the electrically conductive right signal line 6820 of the differential signal line 6830 of the exemplary differential microstrip line 6880 or in the slot 1840 of the slot line 1880;

15710

first microwave and/or HF connector for connecting the waveguide (1380, 1880, 2380, 6880, 6990) to a microwave signal source µWG or an HF signal source RFG or to a microwave signal analyzer (µWAT, µWAR) or to an HF signal analyzer ( RFAR, RFAT).

15720

second microwave and/or HF connector for connecting the waveguide (1380, 1880, 2380, 6880, 6990) to a microwave signal source µWG or an HF signal source RFG or to a microwave signal analyzer (µWAT, µWAR) or to an HF signal analyzer ( RFAR, RFAT).

15730

Cover 15730 of the carrier substrate 1360 with the waveguide (1380, 1880, 2380, 6880, 6990) and the sensor element SE for mechanical and chemical protection and, if necessary, for EMC protection.

15740

Section 15740 of the wave guide covered with the sensor element SE (1380, 1880, 2380, 6880, 6990)

20310

Providing 20310 an optically transparent carrier substrate 1360, wherein the optically transparent carrier substrate 1360 has at least one optically transparent edge and wherein the optically transparent carrier substrate 1360 has a waveguide with at least one clearance, for example a slot line and/or a tri-plate line or a differential Tri-plate line, is covered, so that light can essentially only emerge from the optically transparent carrier substrate 1360 through the clearance of the waveguide on the surface of the optically transparent carrier substrate 1360.

20320

Providing 20320 a liquid colloidal mixture KL with a liquid carrier material TM that can be hardened by means of electromagnetic radiation, the curing radiation 4910, a curing wavelength λ _H , wherein in the carrier material TM of the colloidal mixture KL a large number of crystals and / or diamond nanocrystals ND, preferably nanodiamonds, are embedded and wherein one or more or all of the crystals and/or diamond nanocrystals ND have NV centers and/or other paramagnetic centers and wherein the NV centers of the crystals and/or diamond nanocrystals ND have colloidal mixture KL and/or the other paramagnetic centers of the crystals and/or diamond nanocrystals ND of the colloidal mixture KL emit at least one fluorescent radiation FL upon irradiation with pump radiation LB;

20330

Coating 20330 the surface of the optically transparent carrier substrate 1360 and the waveguide on the surface of the optically transparent carrier substrate 1360 at least to a wetting length L _B with the colloidal mixture KL, which the multitude of embedded crystals and / or diamond nanocrystals ND with NV- centers and/or paramagnetic centers;

20340

feeding 20340 electromagnetic curing radiation 4910 with the curing wavelength λ _H via the at least one edge of the optically transparent carrier substrate 1360 into the optically transparent carrier substrate 1360,

20350

Emergence 20350 of the curing radiation 4910 in the area of a clearance of the waveguide on the surface of the optically transparent carrier substrate 1360 from that of the optically transparent carrier substrate 1360 and irradiating the curing radiation 4910 into the carrier material TM of the colloidal mixture KL, the curing wavelength λ _H of the curing radiation 4910 being chosen in this way is that the carrier material TM of the colloidal mixture KL hardens in the area of this clearance of the waveguide on the surface of the optically transparent carrier substrate 1360 and turns into a solid;

20360

Removing 20360 the uncured carrier material TM of the colloidal mixture KL, in particular by means of a solvent LM, the remaining film of the colloidal mixture KL in the area of this clearance of the waveguide on the surface of the optically transparent carrier substrate 1360 forming a sensor element SE and/or a sensor layer 16205;

α

Angle that the optical waveguide LWL forms with the support surface AF in the immediate vicinity of the sensor element SE;

β

Angle between the virtual vertical AFS to the support surface AF of the sensor head SK on the one hand and the optical fiber LWL when exiting the sensor head housing GH of the sensor head SK. The angle β is preferably 90°. This has the advantage that such an angle β minimizes the torque that the optical fiber LWL together with its mechanical sheath MH exerts on the sensor head SK, since the optical fiber LWL is then at a relatively short distance from the sensor head SK on the surface of the workpiece or a Surface on which the workpiece rests comes to rest. The value of β is preferably between 45° and 135°, better between 70° and 110°, better between 80° and 100°, better between 85° and 95°, better between 87° and 93°;

AOX

cover oxide AOX;

AWV

Evaluation device AWV;

AX

(first application example) or permanent magnet symmetry axis (second application example);

AF

Contact surface of the sensor head SK;

AFS

virtual perpendicular to the support surface AF of the sensor head SK;

b

magnetic flux density B;

B0

zero point flux density B ₀ ;

B22

lower effective magnetic flux density B ₂₂ ;

B23

lower average effective magnetic flux density B ₂₃ ;

B24

upper average effective magnetic flux density B ₂₄ ;

B25

upper effective magnetic flux density B ₂₅ ;

B29

effective magnetic resonance minimum flux density B ₂₉ ;

B61

magnetic flux density B ₆₁ associated with the upper reference line 61;

B62

magnetic flux density B ₆₂ associated with the lower reference line 62;

B63

magnetic flux density B ₆₃ associated with the central reference line 63;

dl

Thickness of the carrier material TM at the midpoint MP of the end surface EF at the first end ELWL1 of the first common optical waveguide LWL;

Bext

external flux density B _ext . The external flux density B _ext includes the portion of the external flux density B _ext , whose flux density vector is perpendicular to the magnetic flux density component B _µW of the microwave radiation of the microwave signal µW, and the portion of the external flux density B _ext , whose flux density vector is parallel to the magnetic flux density component B _µW of the microwave radiation Microwave signal is µW. If the proportion of the external flux density B _ext , whose flux density vector is perpendicular to the magnetic flux density component B _µW of the microwave radiation of the microwave signal µW, is unknown, the proportion of the external flux density B _ext , whose flux density vector is perpendicular to the magnetic flux density component B _µW of the microwave radiation of the microwave signal µW is equal to the unknown external effective magnetic flux density B _nk ;

Bg

averaged mean effective flux density B _g ;

BµW

Flux density component B _µW of the microwave radiation of the microwave signal µW;

Bnk

unknown external effective magnetic flux density B _nk . The unknown external effective magnetic flux density B _nk is the proportion of the unknown external flux density B _ext , whose flux density vector is perpendicular to the magnetic flux density component B _µW of the microwave radiation of the microwave signal µW.

Boff

effective offset flux density B _off ;

BSTR

magnetic stray field of the air gap LS (first application example) or the magnetic flux density of the permanent magnet PM (second application example);

Bref

effective magnetic reference flux density B _ref ;

BΣ

Total flux density B _Σ , which flows through the sensor element SE and the nano-diamonds ND. It is composed of the external magnetic flux density B _etx and the additional magnetic flux density B _ad , which the magnetic field generating means Lc generates.

CTR

Control device CTR;

CTR2

further control device CTR2. The further control device CTR2 can serve as a control device CTR of the device. (Please refer 81 .) The evaluation device 30 preferably includes the control device CTR;

CTRH

Half bridge control CTRH. The half-bridge control CTRH preferably generally comprises a control device CTR and/or a further control device CTR2 in the sense of the document presented here;

DB

data bus DB;

DLWL

Diameter D _LWL of the optical fiber LWL;

dl

Thickness of the carrier material TM at the midpoint MP of the end surface EF at the first end ELWL1 of the first and/or the second or the common optical fiber LWL;

dIS1

Width d _IS1 of the non-conductive left insulation gap 2340 of the tri-plate line 2380;

dIS2

Width d _IS2 of the non-conductive right insulation gap 2350 of the tri-plate line 2380;

Dr

Drain area Dr;

Dr.K

drain contact DrK;

DRVL

Driver stage DRVL for supplying the magnetic field generating means Lc with electrical energy and/or for controlling the magnetic field generating means Lc. If the magnetic field generating means Lc is one or more coils, in particular flat coils, the driver stage DRVL preferably supplies the magnetic field generating means Lc with an electrical coil current I _L . A magnetic field controller LCTR compares values of the magnetic flux density B with a reference value and regulates the supply of the magnetic field generating means L _c with electrical energy and/or the energization of the magnetic field generating means Lc with an electrical coil current I _L in such a way that this change is a difference between the values of the magnetic Flux density B and the reference value counteracts. The magnetic field controller LCTR receives the information about the values of the magnetic flux density B either from separate magnetic field sensors and / or from a control device CTR of the proposed device;

ds

width ds of the electrically conductive signal line 1330;

dSE

Diameter d _SE of the sensor element SE;

DSE

Thickness D _SE of the sensor element SE and/or the sensor element layer 14305;

dSL

Width d _SL of the slot 1840 of the slot line 1880 or the gap 6840 of a differential microstrip line 6880 or the gap 6840 of a differential tri-plate line 6980;

dpm

Distance d _pm of the lower end of the permanent magnet PM to the support surface AF;

dr

Thickness at other points of the end surface EF of the first end ELWL1 of the first and/or the second or the common optical fiber LWL;

dSK1

Height of the sensor head SK;

dSK2

length of sensor head SK;

dSK3

Width of sensor head SK;

dSK4

Depth of the recess VT of the sensor head SK;

DLWL

Diameter of the fiber optic cable LWL;

DLWLL

Diameter of the fiber optic lens LWLL;

DLWLMH

Diameter of the sheathed optical fiber LWL comprising the diameter of the optical fiber LWL with the mechanical sheath MH;

DM

Diamonds DM. The diamonds preferably have a size smaller than 5mm, better smaller than 2mm, better smaller than 1mm, better smaller than 0.5mm, better smaller than 0.2mm, better smaller than 0.1mm, better smaller than 50µm, better smaller than 20µm, better smaller than 10µm, better smaller than 5µm, better smaller than 2mm, better smaller than 1µm, better smaller than 0.5µm, better smaller than 0.2µm, better smaller than 0.1µm, better smaller than 50nm, better smaller than 20nm, better smaller than 10nm. The diamonds here also represent the other possible crystals with paramagnetic centers, which can comprise the carrier material TM and which emit fluorescent radiation FL when irradiated with pump radiation LB;

EF

End surface of the first end ELWL1 of the first and/or the second or the common optical fiber LWL;

ELWL1

first end of the fiber optic cable LWL;

ELWL2

second end of the optical fiber LWL;

EU

one revolution of the engine;

EXTDB

external data bus EXTDB, in particular for communication between a control device (CTR, CTRH, CTR2) and a higher-level computer system;

F1

dichroic mirror F1 or optical filter F1 for separating the fluorescence radiation FL from the pump radiation LB for the sensor element SE. The dichroic mirror / optical filter F1 is therefore functionally identical to the optical filter (long pass) 6. The dichroic mirror F1 or the optical filter F1 can also be a vector dichroic mirror F1 or a vector optical filter F1 in the sense of the document presented here which may include a plurality of dichroic mirror components or a plurality of optical filter components (F1_1, F1_2, F1_3, F1_4, F1_5);

F1_1

dichroic mirror F1_1 for the left sensor element SE (1410) or optical filter F1 for the left sensor element SE (1410) for separating the fluorescent radiation FL_1 of the left sensor element SE (1410) from the pump radiation LB_1 for the left sensor element SE (1410);

F1_2

dichroic mirror F1_2 for the middle sensor element SE(1420) or optical filter F1 for the middle sensor element SE(1420) for separating the fluorescent radiation FL_2 of the middle sensor element SE(1420) from the pump radiation LB_2 for the middle sensor element SE(1420);

F1_3

dichroic mirror F1_3 for the right sensor element SE(1430) or optical filter F1 for the right sensor element SE(1430) for separating the fluorescence radiation FL_3 of the right sensor element SE(1430) from the pump radiation LB_3 for the right sensor element SE(1430);

F1_4

dichroic mirror F1_4 for the left line sensor element SE(7110) or optical filter F1 for the left line sensor element SE(7110) for separating the fluorescence radiation FL_4 of the left line sensor element SE(7110) from the pump radiation LB_4 for the left line sensor element SE(7110);

F1_5

dichroic mirror F1_5 for the right line sensor element SE(7120) or optical filter F1 for the right line sensor element SE(7120) for separating the fluorescence radiation FL_5 of the right line sensor element SE(7120) from the pump radiation LB_5 for the right one

ffµw

Microwave frequency modulation frequency f _fµW ;

FL

Fluorescence radiation FL of the NV centers and/or paramagnetic centers within the sensor element SE. The document presented here also designates the fluorescence radiation FL with the reference number 14. In the sense of the document presented here, the fluorescence radiation FL can also be a vector fluorescence radiation FL, which has a plurality of fluorescence radiation components (FL_1, FL_2, FL_3, FL_4, FL_5). may include;

FL_1

Fluorescence radiation FL_1 of the NV centers and/or paramagnetic centers within the left sensor element SE(1410);

FL_2

Fluorescence radiation FL_2 of the NV centers and/or paramagnetic centers within the middle sensor element SE(1420);

FL_3

Fluorescence radiation FL_3 of the NV centers and/or paramagnetic centers within the right sensor element SE(1430);

FL_4

Fluorescence radiation FL_4 of the NV centers and/or paramagnetic centers within the left line sensor element SE(7110);

FL_5

Fluorescence radiation FL_5 of the NV centers and/or paramagnetic centers within the right line sensor element SE(7120);

fLED

LED modulation frequency f _LED of the LED modulation signal S5w of the transmission signal S5 for the sensor element SE for modulating the light source LED for the sensor element SE;

fLED_1

LED modulation frequency f _{LED_1} of the LED modulation signal S5w_1 of the transmission signal S5_1 for the left sensor element SE(1410) for modulating the light source LED_1 for the left sensor element SE(1410);

fLED_2

LED modulation frequency f _{LED_2} of the LED modulation signal S5w_2 of the transmission signal S5_2 for the middle sensor element SE(1420) for modulating the light source LED_2 for the middle sensor element SE(1420);

fLED_3

LED modulation frequency f _{LED_3} of the LED modulation signal S5w_3 of the transmission signal S5_3 for the right sensor element SE(1430) for modulating the light source LED_3 for the right sensor element SE(1430);

fLED_4

LED modulation frequency f _{LED_4} of the LED modulation signal S5w_4 of the transmission signal S5_4 for the left line sensor element SE(7110) for modulating the light source LED_5 for the left line sensor element SE(71100);

fLED_5

LED modulation frequency f _{LED_5} of the LED modulation signal S5w_5 of the transmission signal S5_5 for the right line sensor element SE(7120) for modulating the light source LED_5 for the right line sensor element SE(7120);

FM

optically non-transparent filling material

fmg

Magnetic field modulation frequency f _mg ;

fµW

Microwave modulation frequency f _µW ;

FMM

ferromagnetic material;

FOX

field oxide FOX;

frWm

Radio wave modulation frequency f _RWm ;

FS2

second catch structure FS2;

G

signal generator G;

G1

first signal generator G1. In the sense of the document presented here, the first signal generator G1 can also be a vectorial first signal generator G1, which can include a plurality of first signal generator components (G1_1, G1_2, G1_3, G1_4, G1_5);

G1_1

first signal generator G1 for the left sensor element SE (1410);

G1_2

first signal generator G1 for the middle sensor element SE (1420);

G1_3

first signal generator G1 for the right sensor element SE (1430);

G1_4

first signal generator G1 for the right line sensor element SE (7110);

G1_5

first signal generator G1 for the right line sensor element SE (7120);

G2

second signal generator G2;

G2_I

first second signal generator G2_I for generating the first microwave modulation signal S5m_I;

G2_II

second second signal generator G2_II for generating the second microwave modulation signal S5m_II;

G2_III

third second signal generator G2_III for generating the third microwave modulation signal S5m_III;

G2_IV

fourth second signal generator G2_IV for generating the fourth microwave modulation signal S5m_IV;

GA

Gate GA;

GH

Housing, in particular of the stator of the motor in the second embodiment of a motor;

GHR

rotor housing;

GH

Sensor head housing GH. The sensor head housing GH of the sensor head SK can be produced, for example, using 3D printing, for example using FDM or SLS printing. Preferably, the material of the sensor head housing is not ferromagnetic (µ _t <1), at least in the vicinity of the sensor element SE. The material of the sensor head housing is preferably diamagnetic;

GND

reference potential;

GOX

gate oxide GOX;

H

magnetic excitation;

HB

half bridges HB;

HSL

HSL half-bridge control lines;

IMPHU

Motor phase current of the U motor phase MPHu;

IMPHV

Motor phase current of the V motor phase MPHv;

IMPHW

Motor phase current of the W motor phase MPHw;

JTAG

IEEE 1149 JATG test controller JTAG;

AI

Kink in channel KN of sensor head housing GH;

KL

colloidal varnish KL. The colloidal lacquer KL preferably comprises the carrier material TM, for example the UV-curable NOA 61 adhesive and the crystals and/or diamond nanocrystals ND. If necessary, the colloidal varnish KL can comprise a solvent LM at the time of processing to adjust the viscosity for the coating and/or printing and/or dispensing process;

CN

Channel KN, through which the optical fiber LWL is inserted into the sensor head housing GH;

L.B

wetting length;

L.B

Pump radiation LB. The document presented here also designates the pump radiation LB with the reference number 13. In the sense of the document presented here, the pump radiation LB (13) can also be a vectorial pump radiation LB, which has a plurality of pump radiation components (LB_1, LB_2, LB_3, LB_4 , LB_5);

LB_1

Pump radiation LB_1 from the light source LED_1 (pump radiation source) for the left sensor element SE (1410);

LB_2

Pump radiation LB_2 from the light source LED_2 (pump radiation source) for the middle sensor element SE (1420);

LB_3

Pump radiation LB_3 from the light source LED_3 (pump radiation source) for the right sensor element SE (1430);

LB_4

Pump radiation LB_4 from the light source LED_4 (pump radiation source) for the left line sensor element SE(7110);

LB_5

Pump radiation LB_5 from the light source LED_5 for the right line sensor element SE(7120); Line sensor element SE(7120);

Lc

Magnetic field generating agent Lc. The magnetic field generating agent Lc. can, for example, be an electrical coil, in particular an electrical flat coil on the back of the circuit board 1360 (PCB). A driver stage DRVL for supplying the magnetic field generating means Lc preferably supplies the magnetic field generating means Lc with electrical energy. In the case of a coil as the magnetic field generating means Lc, driver stage DRVL energizes the magnetic field generating means Lc with an electrical current to supply the magnetic field generating means Lc. In the sense of the document presented here, the magnetic field generating means Lc can also comprise a permanent magnet PM with a positioning device PV, in which case the driver stage DRVL preferably controls the positioning device PV of the permanent magnet PM. Depending on the positioning of the permanent magnet PM relative to the sensor element SE, a different effective magnetic flux density B _w flows through the sensor element SE. The magnetic field controller LCTR preferably controls the driver stage DRVL. In the sense of the document presented here, the magnetic field generating means Lc can also be a vector magnetic field generating means Lc, which can comprise a plurality of magnetic field generating means components (Lc_1, Lc_2, Lc_3, Lc_4, Lc_5);

Lc_1

first magnetic field generating means Lc_1 for the first sensor element SE of the first sensor element channel. In the example of Figure 141, the first magnetic field generating means Lc_1 is part of the magnetic field generating means Lc. The document presented here refers at this point to the description of the magnetic field generating agent Lc.

Lc_2

second magnetic field generating means Lc_2 for the second sensor element SE of the second sensor element channel. In the example of Figure 141, the second magnetic field generating means L _c _2 is part of the magnetic field generating means Lc. The document presented here refers at this point to the description of the magnetic field generating agent Lc.

Lc_3

third magnetic field generating means L _c _3 for the third sensor element SE of the third sensor element channel. In the example of Figure 141, the third magnetic field generating means L _c _3 is part of the magnetic field generating means Lc. The document presented here refers at this point to the description of the magnetic field generating agent Lc.

Lc_4

fourth magnetic field generating means L _c _4 for the fourth sensor element SE of the fourth sensor element channel. In the example of Figure 141, the fourth magnetic field generating means L _c _4 is part of the magnetic field generating means Lc. The document presented here refers at this point to the description of the magnetic field generating agent Lc.

Lc_5

fifth magnetic field generating means L _c _5 for the fifth sensor element SE of the fifth sensor element channel. In the example of Figure 141, the fifth magnetic field generating means L _c _5 is part of the magnetic field generating means Lc. The document presented here refers at this point to the description of the magnetic field generating agent Lc.

LCTR

Magnetic field controller LCTR. The magnetic field controller LCTR preferably compares values of the magnetic flux density B with a reference value and regulates the supply of the magnetic field generating means Lc with electrical energy and/or the energization of the magnetic field generating means Lc with an electrical coil current I _L in such a way that this change is a difference between the values of the magnetic Flux density B and the reference value counteracts. The magnetic field controller LCTR receives the information about the values of the magnetic flux density B either from separate magnetic field sensors and / or from a control device CTR of the proposed device. The magnetic field controller LCTR can be, for example, a P controller and/or a PI controller and/or a PID controller or the like, the controller preferably having at least one integrating property in its control characteristics. The magnetic field controller LCTR preferably receives the reference value from a control device CTR of the proposed device or through constructive measures or the like. The control device CTR can, if necessary, emulate the magnetic field controller LCTR;

LDRV

Light source driver LDRV for the light source LED (pump radiation source). In the sense of the document presented here, the light source driver LDRV for the light source LED (pump radiation source) can also be a vector light source driver LDRV for a vector light source LED (pump radiation source), which has a plurality of light source driver components (LDRV_1, LDRV_2, LDRV_3, LDRV_4, LDRV_5) may include;

LDRV_1

Light source driver LDRV_1 for the light source LED_1 (pump radiation source) for the pump radiation LB_1 for the left sensor element SE (1410);

LDRV_2

Light source driver LDRV_2 for the light source LED_2 (pump radiation source) for the pump radiation LB_2 for the middle sensor element SE(1420);

LDRV_3

Light source driver LDRV_3 for the light source LED_3 (pump radiation source) for the pump radiation LB_3 for the right sensor element SE(1430);

LDRV_4

Light source driver LDRV_4 for the light source LED_4 (pump radiation source) for the pump radiation LB_4 for the left line sensor element SE(7110);

LDRV_5

Light source driver LDRV_5 for the light source LED_5 (pump radiation source) for the pump radiation LB_5 for the right line sensor element SE(7120);

LED

Light source LED (pump radiation source). In the sense of the document presented here, the light source LED (pump radiation source) can also be a vector light source LED (pump radiation source), which can include a plurality of light source components (LED_1, LED_2, LED_3, LED_4, LED_5);

LED_1

Light source LED_1 (pump radiation source) for the left sensor element SE(1410);

LED_2

Light source LED_2 (pump radiation source) for the middle sensor element SE(1420);

LED_3

Light source LED_3 (pump radiation source) for the right sensor element SE(1430);

LED_4

Light source LED_4 (pump radiation source) for the left line sensor element SE(7110);

LED_5

Light source LED_5 (pump radiation source) for the right line sensor element SE(7120);

λB

exposure wavelength λ _B;

λfl

Fluorescence radiation wavelength λ _fl ;

λH

curing wavelength λ _H;

λpmp

Pump radiation wavelength λ _pmp ;

LIV

Multiple correlator LIV. The multiple correlator LIV is preferably a lock-in amplifier or a functionally equivalent device, for example for estimating the proportion of a predetermined transmission signal in a reception signal. In the sense of the document presented here, the multiple correlator LIV can also be a vectorial multiple correlator LIV, which can include a plurality of multiple correlator components (LIV_1, LIV_2, LIV_3, LIV_4, LIV_5);

LIV_1

Multiple correlator LIV_1 for the left sensor element SE(1410);

LIV_2

Multiple correlator LIV_2 for the middle sensor element SE(1420);

LIV_3

Multiple correlator LIV_3 for the right sensor element SE(1430);

LIV_4

Multiple correlator LIV_4 for the left line sensor element SE(7110);

L!V_5

Multiple correlator LIV_5 for the right line sensor element SE(7120);

L.S

air gap;

LST

Value of the fluorescence intensity based filter output signal S4 (in arbitrary units);

LWL

Fiber optic cable LWL. For example, it can be a fiber optic or a glass plate 46 or an optical transmission path. In the sense of the document presented here, the optical fiber LWL can also be a vector optical fiber LWL (e.g. a bundle of optical fibers or a collection of optical fibers LWL), which can include a plurality of optical fiber components (LWL_1, LWL_2, LWL_3, LWL_4, LWL_5);

LWL1

first optical fiber LWL1;

LWL2

second optical fiber LWL2;

LWLC

Core of the fiber optic cable;

LWLL

fiber optic lens;

λfl

Fluorescence wavelength λ _fl ;

λH

Curing wavelength λ _H ;

λpmp

Pump radiation wavelength λ _pmp ;

M1

first multiplier M1 or just multiplier;

M2

second multiplier M2;

M2L

second metal layer M2L;

MDS

Sample data set MDS. This pattern data record MDS preferably comprises the data record of a recognized pattern and/or a feature vector for pattern recognition which the control device CTR carries out with the aid of a computer-implemented program for pattern recognition or the like. Typically this is the value of the detected total flux density B _Σ . Typically, this data set also includes the measurement error value with which this value of the detected total flux density B _Σ is affected;

M.E

optional mechanical cover ME and/or optical shield ME;

ME_1

optional mechanical cover ME_1 and/or optical shield ME_1 for the left sensor element SE(1410);

ME_2

optional mechanical cover ME_2 and/or optical shield ME_2 for the middle sensor element SE(1420);

ME_3

optional mechanical cover ME_3 and/or optical shield ME_3 for the right sensor element SE(1430);

MESA

MESA structure MESA;

MEV

Pattern recognition device MEV;

MH

mechanical shell;

MIX

mixer MIX;

ML

Center line of the fiber optic cable (it is a virtual line);

MP

Center of the end surface EF of the first end ELWL1 of the optical fiber LWL;

MPH

engine phases;

MPHu

U motor phase;

MPHv

V engine phase;

MPHw

W motor phase;

MRK

Marking on the rotor housing GHR;

MS

Magnetic field sensor MS;

µW

microwave signal µW;

µW_I

first microwave signal µW_I;

µW_II

second microwave signal µW_II;

µW_III

third microwave signal µW_III;

µW_IV

fourth microwave signal µW_IV;

µWG_F_I

first microwave filter µWG_F_I;

µWG_F_II

first microwave filter µWG_F_II;

µWG_F_III

first microwave filter µWG_F_III;

µWG_F_IV

first microwave filter µWG_F_IV;

µW_G_I

first internal microwave signal µW_G_I;

µW_G_II

second internal microwave signal µW_G_II;

µW_G_III

third internal microwave signal µW_G_III;

µW_G_IV

fourth internal microwave signal µW_G_IV;

µW_MX_I

first microwave mixed signal µW_MX_I;

µW_MX_II

second microwave mixed signal µW_MX_II;

µW_MX_III

third microwave mixed signal µW_MX_III;

µW_MX_IV

fourth microwave mixed signal µW_MX_lV;

µWAR

Transmission microwave signal analyzer µWAR for detecting the distance 15740 of the waveguide (1380, 1880, 2380, 6880, 6990) covered by the sensor element SE through interaction with the carrier material TM of the sensor element SE and through interaction with the NV centers NVZ and / or paramagnetic centers of the crystals and / or diamonds DM within the carrier material TM of the sensor element SE deformed and reflected microwave signal µWR of the microwave signal µW.

µWAT

Reflection microwave signal analyzer µWAT for detecting the distance 15740 of the waveguide (1380, 1880, 2380, 6880, 6990) covered by the sensor element SE through interaction with the carrier material TM of the sensor element SE and through interaction with the NV centers NVZ and / or paramagnetic centers of the crystals and / or diamonds DM within the carrier material TM of the sensor element SE deformed and transmitted microwave signal µWT of the microwave signal µW.

µWC

Microwave directional coupler for feeding the microwave signal µW into the waveguide (1380, 1880, 2380, 6880, 6990) and for coupling out the reflected microwave signal µWR for analysis by the reflection microwave analyzer µWAR.

µWG

Microwave signal source µWG;

µWG_I

first microwave signal source µWG_I;

µWG_II

second microwave signal source µWG_II;

µWG_III

third microwave signal source µWG_III;

µWG_IV

fourth microwave signal source µWG_IV;

µWG_MX_I

first internal mixer µW_G_I ;

µWG_MX_II

second internal mixer µW_G_II;

µWG_MX_III

third internal mixer µW_G_III;

µWG_MX_IV

fourth internal mixer µW_G_IV;

µWR

reflected microwave signal µWR of the microwave signal µW, which is generated by interaction with the carrier material TM of the sensor element SE and by the interaction with the NV centers NVZ and / or paramagnetic centers of the crystals and / or diamonds DM within the carrier material TM of the sensor element SE in the with Sensor element SE covered section 15740 of the wave guide (1380, 1880, 2380, 6880, 6990) is deformed and reflected;

µWT

transmitted microwave signal µWT of the microwave signal µW, which is caused by interaction with the carrier material TM of the sensor element SE and by the interaction with the NV centers NVZ and / or paramagnetic centers of the crystals and / or diamonds DM within the carrier material TM of the sensor element SE in the with Sensor element SE covered section 15740 of the wave guide (1380, 1880, 2380, 6880, 6990) is deformed and transmitted through it;

ND

Diamond Nano Crystals ND. The document presented here uses the reference symbol ND to designate not only diamonds DM, but more generally crystals that can have paramagnetic centers. Nevertheless, diamond crystals DM are preferred than diamond nanocrystals ND. NV centers in diamond are preferred as paramagnetic centers. The small, stochastically uniformly distributed diamond nanocrystals ND in the material of the carrier material TM of the colloidal mixture KL are indicated in some figures for clarity. The diamond nano-crystals are preferably ND crystals, preferably diamond crystals, with a size of less than 10 μm, better less than 5 μm, better less than 2 μm, better less than 1 μm, better less than 0.5 μm, better less than 0.2 μm, better less than 0.1 μm , less than 50nm, less than 20nm, , less than 10nm. Sizes over 100nm are particularly preferred, since sizes smaller than 100nm can cause special surface effects between the paramagnetic centers, in particular NV centers, and the respective crystal surface of the relevant diamond nanocrystal ND or crystal. A large number of these diamond nanocrystals ND or crystals preferably comprise one or more NV centers in diamond, which then generate the fluorescence radiation FL when irradiated with pump radiation LB.;

NVM

non-volatile memory NVM;

NVZ

NV centers;

NW

N-well NW;

OF

opening

KE

Core;

CN

Channel in the housing GH or sensor head housing GH for the supply of the optical fiber LWL and/or optical window in the housing or sensor head housing GH;

O.E

Opening for the optical waveguide LWL in the ferromagnetic support ST of the second application example;

OF

Surface of the workpiece, for example the surface of a ferromagnetic material FMM, of the first application example;

OFF1

offset addition;

oMS1

first upper metal cover oMS1 of the first optical waveguide LWL1 upwards to the surface of the carrier substrate 1360. It is an optical shield ME;

oMS2

second upper metal cover oMS2 of the second optical waveguide LWL2 upwards to the surface of the carrier substrate 1360. It is an optical shield ME;

ωµW

microwave frequency ω _µw ;

ωµw0

Zero point microwave frequency ω _µW0 ;

ωµW22

lower microwave frequency ω _µW22 ;

ωµW23

lower mean microwave frequency ω _µW23 ;

ωµW24

upper mean microwave frequency ω _µW24 ;

ωµW25

upper microwave frequency ω _µW25 ;

ωµW29

Resonance minimum microwave frequency ωµ _W29 ;

ωµWnk

unknown microwave frequency ω _µWnk ;

φMPHU

Current angle of the complex current vector of the motor phase current I _MPHU of the motor phase MPHu;

φMPHV

Current angle of the complex current vector of the motor phase current I _MPHV of the motor phase MPHv;

φMPHW

Current angle of the complex current vector of the motor phase current I _MPHW of the motor phase MPHw;

P.D

Photodetector PD. In the sense of the document presented here, the photodetector PD can also be a vector photodetector PD, which can include a plurality of photodetector components (PD_1, PD_2, PD_3, PD_4, PD_5);

PD_1

Photodetector PD_1 for the left sensor element SE(1410);

PD_2

Photodetector PD_2 for the middle sensor element SE(1420);

PD_3

Photodetector PD_3 for the right sensor element SE(1430);

PD_4

Photodetector PD_4 for the left line sensor element SE(7110);

PD_5

Photodetector PD_5 for the right line sensor element SE(7120);

PL

Pump radiation source PL, also designated by reference number 2 as light source 2;

PM

PM permanent magnet. In the first application example of the sensor head SK, the permanent magnet PM is preferably designed to be tubular with a permanent magnet symmetry axis AX. If in this first application example the sensor element SE is located on this symmetry axis AX, the horizontal component of the magnetic flux density B is approximately 0 T. In the first application example presented here, the permanent magnet PM serves to provide the magnetic excitation H of the magnetic circuit of the sensor head SK in interaction with the material of the workpiece near the surface OF of the workpiece and near the sensor element SE. Instead of a permanent magnet PM, a current-carrying coil or the like can also be used here in the first application example. More complicated magnetic circuits with more than one source of magnetic excitation are also conceivable in the first application example for the same purpose. For example, the sensor head SK in the first application example can also have a combination of one of the several permanent magnets with one or more coils as a source of the magnetic excitation H. For example, the sensor head SK in the first application example can also have one or more coils as a source of the magnetic excitation H. In the sense of the document presented here, the term permanent magnet stands for an arbitrarily structured source of magnetic excitation H. However, a single permanent magnet is expressly particularly preferred in the first application example. In the second application example, it can be a permanent magnet of the motor, for example the rotor or the stator. In the third application example of a magnetic camera, the permanent magnet PM can provide the magnetic excitation H of the measurement object to be tested as an auxiliary magnet 19. In the case of the fourth application example of a microwave spectrometer, the permanent magnet as a gradient permanent magnet GPM can ensure a different splitting of the lower resonance edge 522 and the upper resonance edge 525. For example, a permanent magnet PM can be used as a magnetic field generating means Lc;

POS

position detector;

POSS

position signal;

POSSW

Value of position signal POSS in arbitrary units;

R.A.M.

Memory RAM, especially volatile memory;

RFG

Radio wave source (RF source) RFG;

RFAR

Transmission RF signal analyzer RFAR for the detection of the section 15740 of the waveguide (1380, 1880, 2380, 6880, 6990) covered by the sensor element SE through interaction with the carrier material TM of the sensor element SE and through the interaction with the NV centers NVZ and/or paramagnetic centers of the crystals and/or diamonds DM within the carrier material TM of the sensor element SE in the section 15740 of the wave guide (1380, 1880, 2380, 6880, 6990) covered with the sensor element SE and deformed and reflected HF signal RWR of the HF signal RW.

RFAT

Reflection RF signal analyzer RFAT for the detection of the section 15740 of the waveguide (1380, 1880, 2380, 6880, 6990) covered by the sensor element SE through interaction with the carrier material TM of the sensor element SE and through the interaction with the NV centers NVZ and/or paramagnetic centers of the crystals and/or diamonds DM within the carrier material TM of the sensor element SE in the section 15740 of the waveguide (1380, 1880, 2380, 6880, 6990) covered with the sensor element SE, deformed and transmitted HF signal RWT of the HF signal RW.

RMK

magnetic rotor circuit RMK;

R.I

Disturbance in the ferromagnetic material FMM. Such a disturbance may be a change in composition that locally changes the magnetic properties of the ferromagnetic material FM. For example, it may be a crack or a hole or a hole or a depression or a thickness variation or a modulation of a form factor such as thickness, width or the like;

RW

radio wave signal RW;

RWC

Microwave directional coupler for feeding the HF signal RW into the waveguide (1380, 1880, 2380, 6880, 6990) and for coupling out the reflected HF signal RWR for analysis by the reflection HF signal analyzer µWAR.

RWR

reflected HF signal RWR of the HF signal RW, which is generated by interaction with the carrier material TM of the sensor element SE and by the interaction with the NV centers NVZ and/or paramagnetic centers of the crystals and/or diamonds DM within the carrier material TM of the sensor element SE is deformed and reflected in the section 15740 of the waveguide (1380, 1880, 2380, 6880, 6990) covered by the sensor element SE;

RWT

transmitted HF signal RWT of the HF signal RW, which is generated by interaction with the carrier material TM of the sensor element SE and by the interaction with the NV centers NVZ and/or paramagnetic centers of the crystals and/or diamonds DM within the carrier material TM of the sensor element SE is deformed in the section 15740 of the waveguide (1380, 1880, 2380, 6880, 6990) covered by the sensor element SE and transmitted through it;

S0

Receiver output signal S0. In the sense of the document presented here, the receiver output signal S0 can also be a vector receiver output signal S0, which can include a plurality of receiver output signal components (S0_1, S0_2, S0_3, S0_4, S0_5);

S0_1

Receiver output signal S0_1 for the left sensor element SE(1410). The receiver output signal S0_1 for the left sensor element SE(1410) preferably represents a receiver output signal component of the vectorial receiver output signal S0;

S0_2

Receiver output signal S0_2 for the middle sensor element SE(1420);

S0_3

Receiver output signal S0_3 for the right sensor element SE(1430);

S0_4

Receiver output signal S0_4 for the left line sensor element SE(7110);

S0_5

Receiver output signal S0_5 for the right line sensor element SE(7120);

S1

amplified receiver output signal S1 or digitized receiver output signal S1. In the sense of the document presented here, the amplified receiver output signal S1 or digitized receiver output signal S1 can also be a vectorial amplified receiver output signal S1 or a vectorial digitized receiver output signal S1, which has a plurality of amplified receiver output signal components (S1_1, S1_2, S1_3, S1_4, S1_5) may include;

S1_1

amplified receiver output signal S1_1 for the left sensor element SE(1410) or digitized receiver output signal S1_1 for the left sensor element SE(1410);

S1_2

amplified receiver output signal S1_2 for the left sensor element SE (1420) or digitized receiver output signal S1_2 for the left sensor element SE (1410);

S1_3

amplified receiver output signal S1_3 for the left sensor element SE(1430) or digitized receiver output signal S1_3 for the left sensor element SE(1430);

S1_4

amplified receiver output signal S1_4 for the left line sensor element SE(7110) or digitized receiver output signal S1_3 for the left line sensor element SE(7110);

S1_5

amplified receiver output signal S1_5 for the right line sensor element SE(7120) or digitized receiver output signal S1_3 for the right line sensor element SE(7120);

S3

filter input signal;

S3a

first intermediate signal S3a of the L3 product of the multiple correlator LIV;

S3b

second intermediate signal S3b of the L3 product of the multiple correlator LIV;

S4

Filter output signal S4 also referred to as a flux density measurement signal when used as a magnetometer. In the sense of the document presented here, the filter output signal S4 can also be a vectorial filter output signal S4, which can include a plurality of filter output signal components (S4_1, S4_2, S4_3, S4_4, S4_5);

S4_1

Filter output signal S4_1 for the left sensor element SE(1410);

S4_2

Filter output signal S4_2 for the middle sensor element SE(1420);

S4_3

Filter output signal S4_3 for the right sensor element SE(1430);

S4_4

Filter output signal S4_4 for the left line sensor element SE(7110);

S4_5

Filter output signal S4_5 for the right line sensor element SE(7120);

S5

Transmit signal S5. In the sense of the document presented here, the transmission signal S5 can also be a vector transmission signal S5, which can include a plurality of transmission signal components (S5_1, S5_2, S5_3, S5_4, S5_5);

S5

Transmission signal S5 for modulating the light source LED (pump radiation source of the pump radiation LB);

S5_1

Transmission signal S5_1 for the left sensor element SE(1410) for modulating the light source LED_1 for the left sensor element SE(1410) (pump radiation source of the pump radiation LB_1 for the left sensor element SE(1410));

S5_2

Transmission signal S5_2 for the middle sensor element SE(1420) for modulating the light source LED_2 for the middle sensor element SE(1420) (pump radiation source of the pump radiation LB_2 for the middle sensor element SE(1420));

S5_3

Transmission signal S5_3 for the right sensor element SE(1430) for modulating the light source LED_3 for the right sensor element SE(1430) (pump radiation source of the pump radiation LB_3 for the right sensor element SE(1430));

S5_4

Transmit signal S5_4 for the left line sensor element SE(7110) for modulating the light source LED_4 for the left line sensor element SE(7110) (pump radiation source of the pump radiation LB_4 for the left line sensor element SE(7110));

S5_5

Transmission signal S5_5 for the right line sensor element SE(7120) for modulating the light source LED_5 for the right left line sensor element SE(7120) (pump radiation source of the pump radiation LB_5 for the right left line sensor element SE(7120));

S5m

microwave modulation signal S5m;

S5mq

inverted microwave modulation signal S5mq;

S5w

LED modulation signal S5w, also referred to as a transmit pre-signal. In the sense of the document presented here, the LED modulation signal S5w can also be a vector LED modulation signal S5w, which can include a plurality of LED modulation signal components (S5w_1, S5w_2, S5w_3, S5w_4, S5w_5);

S5w_1

LED modulation signal S5w1 for the left sensor element SE(1410) for modulating the light source LED_1 for the left sensor element SE(1410) (pump radiation source of the pump radiation LB_1 for the left sensor element SE(1410));

S5w_2

LED modulation signal S5w2 for the middle sensor element SE(1420) for modulating the light source LED_2 for the middle sensor element SE(1420) (pump radiation source of the pump radiation LB_2 for the middle sensor element SE(1420));

S5w_3

LED modulation signal S5w3 for the right sensor element SE(1430) for modulating the light source LED_3 for the right sensor element SE(1430) (pump radiation source of the pump radiation LB_3 for the right sensor element SE(1430));

S5w_4

LED modulation signal S5w4 for the left line sensor element SE(7110) for modulating the light source LED_4 for the left line sensor element SE(7110) (pump radiation source of the pump radiation LB_4 for the left line sensor element SE(7110));

S5w_5

LED modulation signal S5w5 for the right line sensor element SE(7120) for modulating the light source LED_5 for the right line sensor element SE(7120) (pump radiation source of the pump radiation LB_5 for the right line sensor element SE(7120));

S5wq

inverted LED modulation signal S5wq;

SCHR

Screw. In the first application example, the sensor head housing GH preferably has a thread for a grub screw to fix the optical waveguide LWL to accommodate the screw;

SE

Sensor element SE. The sensor element SE preferably comprises a plurality of nanodiamonds or diamonds DM, which are oriented differently and preferably have a plurality of NV centers NVZ. The sensor element SE preferably comprises a plurality of crystals that are oriented differently and preferably have a plurality of NV centers NVZ and/or paramagnetic centers. In the case of the first application example of a sensor head SK, the sensor element SE with the diamonds DM or nanodiamonds and / or the crystals with paramagnetic centers is preferred in the middle under the permanent magnet PM and as close as possible to the test object, here in the first application example of a sensor head SK with the exemplary workpiece the ferromagnetic material FMM. In the case of the second application example of a motor, the sensor element is preferably positioned within the air gap LS of the motor or in its stray field. In the case of the third application example of a magnetic field camera, the sensor element SE preferably comprises a sensor layer 5. In the case of the fourth application example of a wave line (1380, 1880, 2380 6830, 6980), the sensor element is preferably located near a line (1310, 1320, 1330, 6810, 6820) of the respective waveline and/or in a clearance (1340, 1350, 1840, 2340, 2350, 6840) of a respective waveline. The sensor element SE typically comprises the nano-diamond crystals ND and a typically solidified carrier medium TE. The document presented here describes various sensor elements SE, in particular the sensor elements 1410, 1420, 1430, 1710, 2210, 2410, 2420, 2430, 4410, 7115, 7125, 1735, 7110 and 7120, 13310, which vary in size and position relative to the lines differentiate;

SIS

Magnetic field sensor control SIS;

SK

sensor head;

SL

Windings of a stator coil;

SMK

magnetic stator circuit;

Sr

Source Area Sr;

SRK

Source contact SrK;

ST

ferromagnetic support;

TB

IEEE JATG test controller JTAG data interface and JTAG test data bus;

TM

Carrier material TM. The carrier material TM of the colloidal mixture KL is preferably liquid at the beginning of processing and is solidified during processing, for example by irradiation with a curing radiation 4910 of a curing wavelength λ _H. After solidification, the carrier material TM is preferably optically transparent to electromagnetic radiation with the pump radiation wavelength λ _pmp and the fluorescence wavelength λ _fl of the paramagnetic centers of the embedded crystals and / or diamond nanocrystals ND, here preferably the NV centers;

t

Time;

T

Period duration of the motor currents (I _MPHU , I _MPHV , I _MPHW );

TM

carrier material;

TP

low pass;

TP

Low-pass filter or filter with low-pass properties;

uMS1

first lower metal panel uMS1

uMS2

second lower metal panel uMS2

v

feed rate;

V1

first amplifier V1 or only amplifier in this document. In the sense of the document presented here, the amplifier V1 can also be a vector amplifier V1, which can include a plurality of amplifier components (V1_1, V1_2, V1_3, V1_4, V1w_5);

V1_1

first amplifier V1_1 for the left sensor element SE (1410) for amplifying and / or digitizing the received signal S0_1 for the left sensor element SE (1410) to the amplified receiver output signal S1_1 for the left sensor element SE (1410) or to the digitized receiver output signal S1_1 for the left sensor element SE(1410);

V1_2

first amplifier V1_2 for the middle sensor element SE (1420) for amplifying and / or digitizing the received signal S0_2 for the middle sensor element SE (1420) to the amplified receiver output signal S1_2 for the middle sensor element SE (1420) or to the digitized receiver output signal S1_2 for the left sensor element SE(1420);

V1_3

first amplifier V1_3 for the right sensor element SE (1430) for amplifying and / or digitizing the received signal S0_3 for the right sensor element SE (1430) to the amplified receiver output signal S1_3 for the right sensor element SE (1430) or to the digitized receiver output signal S1_3 for the right sensor element SE(1430);

V1_4

first amplifier V1_4 for the left line sensor element SE (7110) Amplification and / or digitization of the received signal S0_4 for the left line sensor element SE (7110) to the amplified receiver output signal S1_4 for the left line sensor element SE (7110) or to the digitized receiver output signal S1_4 for the left line sensor element SE (7110)

V1_5

first amplifier V1_5 for the right line sensor element SE(7120) for amplifying and/or digitizing the received signal S0_5 for the right line sensor element SE(7120) to the amplified receiver output signal S1_5 for the right line sensor element SE(7120) or to the digitized receiver output signal S1_5 for the right line sensor element SE(7120);

VDD

supply voltage;

VMPHU

Motor phase voltage of the U motor phase MPH _U related to the reference potential GND;

VMPHV

Motor phase voltage of the V motor phase MPHv related to the reference potential GND;

VMPHW

Motor phase voltage of the W motor phase MPHw related to the reference potential GND;

VT

Deepening VT of the sensor head SK, e.g. for a guide finger of a hand;

glossary

Diamond Nano Crystals ND

The technical teaching presented here preferably uses HD-NV diamonds as diamond nanocrystals ND or crystals of the sensor elements SE or the sensor element layers 5. The document presented here refers to the writing in this context DE 10 2020 109 477 A1 there.

1. i. Andere zum ankoppelnden paramagnetischen Zentrum gleich ausgerichtete paramagnetische Zentren gleicher Art, also beispielsweise die Kopplung eines NV-Zentrums an ein gleichausgerichtetes NV-Zentrum in Diamant;
2. ii. Andere zum ankoppelnden paramagnetischen Zentrum nicht gleich ausgerichtete paramagnetische Zentren gleicher Art, also beispielsweise die Kopplung eines NV-Zentrums an ein nicht gleichausgerichtetes NV-Zentrum in Diamant;
3. iii. Andere zum ankoppelnden paramagnetischen Zentrum gleich ausgerichtete paramagnetische Zentren anderer Art, also beispielsweise die Kopplung eines SiV-Zentrums und/oder TiV-Zentrums und/oder GeV-Zentrums und/oder SnV-Zentrums und/oder NiN4-Zentrums und/oder PbV-Zentrums und/oder ST1-Zentrums an ein gleichausgerichtetes NV-Zentrum in Diamant;
4. iv. Andere zum ankoppelnden paramagnetischen Zentrum nicht gleich ausgerichtete paramagnetische Zentren anderer Art, also beispielsweise die Kopplung eines SiV-Zentrums und/oder TiV-Zentrums und/oder GeV-Zentrums und/oder SnV-Zentrums und/oder NiN4-Zentrums und/oder PbV-Zentrums und/oder ST1-Zentrums an ein nicht gleichausgerichtetes NV-Zentrum in Diamant;
5. v. Nukleare Spins mit magnetischem Moment von Isotopen mit einem solchen Spin, die an das ankoppelnde paramagnetischen Zentrum koppeln und die Teil des paramagnetischen Zentrums sind, also beispielsweise die Kopplung eines NV-Zentrums an ein den Kern des Stickstoffs im NV-Zentrum;
6. vi. Nukleare Spins mit magnetischem Moment von Isotopen mit einem solchen Spin, die an das ankoppelnde paramagnetischen Zentrum koppeln und die nicht Teil des paramagnetischen Zentrums sind, also beispielsweise die Kopplung eines NV-Zentrums an ein den Kern eines ¹³C-Isotops im Umfeld eines NV-Zentrums.

In the sense of the document presented here, an HD-NV diamond is a crystal with a particularly high density of paramagnetic centers. Due to this high density of paramagnetic centers, the fluorescence intensity curve and/or the fluorescence delay curve show fluorescence features that cause couplings of these paramagnetic centers with other crystal structure elements. Such other crystal structure elements can be, for example:

1. i. Other paramagnetic centers of the same type that are aligned in the same way as the coupling paramagnetic center, for example the coupling of a NV center to a NV center in diamond that is aligned in the same way;
2. ii. Other paramagnetic centers of the same type that are not aligned in the same way as the coupling paramagnetic center, for example the coupling of a NV center to a NV center in diamond that is not aligned in the same way;
3. iii. Other paramagnetic centers of a different type aligned in the same way as the coupling paramagnetic center, for example the coupling of a SiV center and/or TiV center and/or GeV center and/or SnV center and/or NiN4 center and/or PbV center and/or ST1 center to a co-aligned NV center in diamond;
4. iv. Other paramagnetic centers of a different type that are not aligned in the same way as the coupling paramagnetic center, for example the coupling of a SiV center and/or TiV center and/or GeV center and/or SnV center and/or NiN4 center and/or PbV center center and/or ST1 center to a non-aligned NV center in diamond;
5. v. Nuclear spins with magnetic moment of isotopes with such a spin, which couple to the coupling paramagnetic center and which are part of the paramagnetic center, for example the coupling of a NV center to a nitrogen nucleus in the NV center;
6. vi. Nuclear spins with magnetic moment of isotopes with such a spin that couple to the coupling paramagnetic center and which are not part of the paramagnetic center, for example the coupling of an NV center to the nucleus of a ¹³ C isotope in the vicinity of an NV center.

The high density of paramagnetic centers of one type, for example NV centers in diamond as a crystal, increases the probability that the distance of a paramagnetic center to such another crystal structure element is so small that one of the couplings specified above becomes possible. As a result, the fluorescence features indicating such a coupling between a paramagnetic center and another crystal structure element are more pronounced in the fluorescence intensity curve and the fluorescence delay curve of the crystal, respectively. For a diamond with a high density of NV centers, this means that the fluorescence features indicating such coupling between a NV center and another crystal structure element are more pronounced in the diamond's fluorescence intensity curve and fluorescence delay curve, respectively.

• An dieser Stelle weist die hier vorgelegte Schrift darauf hin, dass in der Regel Diamanten eine extrem hohe Dichte an P1-Zentren aufweisen. Daher führt eine Erhöhung der NV-Zentrendichte in der Regel nicht zu einer Veränderung des Fluoreszenzmerkmals, das auf eine NV/P1-Kopplung hinweist.
• Die Größe der Diamant-Nano-Kristalle ND ist bevorzugt kleiner 1mm, besser kleiner 500µm, besser kleiner 200µm, besser kleiner 100µm, besser kleiner 50µm, besser kleiner 20µm, besser kleiner 10µm, besser kleiner 5µm, besser kleiner 2µm, besser kleiner 1µm, besser kleiner 500nm, besser kleiner 200nm, besser kleiner 100nm, besser kleiner 50nm. Die Größe der Diamant-Nano-Kristalle kann kleiner 20nm und/oder kleiner 10nm und/oder kleiner 5nm und/oder kleiner 2nm und/oder kleiner 1nm sein. Bei den Autoren besteht die Meinung, dass eine Größe von 50nm optimal ist, ohne dass entsprechende Experimente durchgeführt wurden. Gleiches gilt beim Einsatz von Kristallen, die andere Materialien aufweisen, und die Diamant-Nano-Kristalle ND funktionsäquivalent in den Sensorelementen SE ersetzen oder in den Sensorelementen SE ergänzen. Die technische Lehre dieses Dokuments ist somit ausdrücklich nicht auf Diamant-Nano-Kristalle ND mit Diamantkristallen und NV-Zentren beschränkt. Wenn in dem Text und/oder den Ansprüchen von Diamant-Nano-Kristallen ND und/oder NV-Zentren die Rede ist, kann eine fachkundige Person die Verwendung anderer Kristalle und/oder anderer paramagnetischer Zentren mitlesen. Diese müssen jedoch auf Eignung für den jeweiligen Anwendungsfall ausdrücklich erprobt werden.

A feature that is characteristic of an HD-NV diamond, for example, is the coupling of one NV center to another NV center. Such a diamond therefore comprises a pair of NV centers of two coupled and equivalent NV centers. According to the content of the document presented here, this diamond (HDNV) is then preferably intended for use in a quantum technological device and/or in a quantum technological process. The HD-NV diamond can then be characterized, for example, by the fact that the intensity value curve of the intensity I _is the fluorescence radiation FL of the NV center pair when irradiated with a pump radiation LB with a pump radiation wavelength (λ _pmp ) depending on the value of the magnetic flux density ( B) one to the diamond (HDNV) external magnetic field _a typical intensity drop (English: dip) of the fluorescence intensity value of the intensity I of the fluorescence radiation FL and / or a typical delay increase of the fluorescence delay value of more than 0.01% and / or of more than 0.02% and / or of more than 0.05% and/or more than 0.1% and/or more than 0.2% and/or more than 0.5% and/or 1% and/or more than 2% and/ or of more than 5% at an external magnetic flux density (B) acting on the diamond of approximately 34.0mT (E _34.0.0 ), which indicates an NV-NV interaction of equivalent pairs of NV centers and thus a low average distance between the equivalent NV centers.

• At this point, the document presented here points out that diamonds generally have an extremely high density of P1 centers. Therefore, increasing the NV site density does not usually result in a change in the fluorescence feature indicative of NV/P1 coupling.
• The size of the diamond nano crystals ND is preferably smaller than 1mm, better smaller than 500µm, better smaller than 200µm, better smaller than 100µm, better smaller than 50µm, better smaller than 20µm, better smaller than 10µm, better smaller than 5µm, better smaller than 2µm, better smaller than 1µm, better smaller than 500nm, better smaller than 200nm, better smaller than 100nm, better smaller than 50nm. The size of the diamond nanocrystals can be less than 20nm and/or less than 10nm and/or less than 5nm and/or less than 2nm and/or less than 1nm. The authors are of the opinion that a size of 50nm is optimal, without any corresponding experiments having been carried out. The same applies when using crystals that have other materials and that replace the diamond nanocrystals ND in a functionally equivalent manner in the sensor elements SE or supplement them in the sensor elements SE. The technical teaching of this document is therefore expressly not limited to diamond nanocrystals ND with diamond crystals and NV centers. If diamond nanocrystals ND and/or NV centers are mentioned in the text and/or claims, a competent person can read the use of other crystals and/or other paramagnetic centers. However, these must be explicitly tested for suitability for the respective application.

Fluorescence features

Fluorescence features in the sense of the document presented here are characteristic points in the fluorescence intensity curve or the fluorescence delay curve. The fluorescence intensity curve is the graph of the fluorescence intensity values of the intensity I of the fluorescence radiation FL of a diamond nanocrystal ND made of diamond _shown against the amount of the magnetic flux density B. The fluorescence delay curve is the graph of the time delay values of the time delay of the modulation of the intensity I _is the fluorescence radiation FL versus the modulation of the intensity of the pump radiation LB or versus the modulation signal S5 or a signal derived therefrom versus the amount of the magnetic flux density B. Fluorescence features in the fluorescence intensity curve are local minima and maxima in the curve. Fluorescence features in the fluorescence delay curve are local maxima and minima in the curve. The following list lists the fluorescence features of a HD-NV diamond (HDNV) with a high density of NV centers that were determined in the preliminary work for the cited publications. These come into question as fluorescence features within the meaning of this document when using a diamond as the crystal of a proposed device or a proposed method. When fluorescence features are mentioned in this document, at least the following fluorescence features are meant when using a diamond as the crystal of a proposed device or a proposed method. If other materials are used (see also the contents of the ZPL table), other fluorescence characteristics result, but these are usually due to analogous mechanisms. The use of these other materials and the corresponding paramagnetic centers and their fluorescence characteristics is covered by the disclosure of the document presented herein. In particular, the use of crystals from elements from main group II and VI is particularly important. Main group and the IV main group are included in the disclosure presented here. Isotopes of the IV main group of the periodic table of elements and from mixed crystals. However, the fluorescence characteristics are not limited to this. If necessary, fewer or more fluorescent features can be used: Fluorescence feature group No. Fluorescent feature pair no approx. position in mT (approx. information) *) Type of intensity extremum min=minimum max=maximum Type of deceleration extremum min=minimum max=maximum Fluorescence feature category 0mT E _0.0,0 0 0.00 mT min Max Main fluorescent feature E _0.0.1b 1 2.10 mT Max min Secondary fluorescence feature E _0.0.2b 2 3.80 mT Max min Secondary fluorescence feature E _0.0.3b 3 5.30 mT Max min Secondary fluorescence feature 9.5mT E _9.5,8a 8th 5.91 mT Max min Secondary fluorescence feature E _9.5,7a 7 6.70 mT Max min Secondary fluorescence feature E _9.5,6a 6 6.95 mT min Max Secondary fluorescence feature E _9.5,5a 5 7.21 mT Max min Secondary fluorescence feature E _9.5,4a 4 7.85 mT min Max Secondary fluorescence feature E _9.5,3a 3 8.12 mT Max min Secondary fluorescence feature E _9.5,2a 2 8.43 mT min Max Secondary fluorescence feature E _9.5,1a 1 8.82 mT Max min Secondary fluorescence feature E _9.5.0 0 9.38 mT min Max Main fluorescent feature E _9.5,1b 1 10.05 mT Max min Secondary fluorescence feature E _9.5,2b 2 10.55 mT min Max Secondary fluorescence feature E _9.5,3b 3 11.10 mT Max min Secondary fluorescence feature E _9.5,4b 4 11.60 mT min Max Secondary fluorescence feature E _9.5,5b 5 11.89 mT Max min Secondary fluorescence feature E _9.5,6b 6 12.12 mT min Max Secondary fluorescence feature 34mT E _34.11a 11 31.22 mT Max min Secondary fluorescence feature E _34.10a 10 31.67 mT min Max Secondary fluorescence feature E _34.9a 9 31.78 mT Max min Secondary fluorescence feature E _34.8a 8th 32.00 mT min Max Secondary fluorescence feature E _34.7a 7 32.25 mT Max min Secondary fluorescence feature E _34.6a 6 32.63 mT min Max Secondary fluorescence feature E _34.5a 5 32.72 mT Max min Secondary fluorescence feature E _34.4a 4 32.96 mT min Max Secondary fluorescence feature E _34.3a 3 33.24 mT Max min Secondary fluorescence feature E _34.2a 2 33.53 mT min Max Secondary fluorescence feature E _34.1a 1 33.65 mT Max min Secondary fluorescence feature _E34.0 0 33.98 mT min Max Main fluorescent feature E _34.1b 1 34.28 mT Max min Secondary fluorescence feature E _34.2b 2 34.38 mT min Max Secondary fluorescence feature E _34.3b 3 34.72 mT Max min Secondary fluorescence feature E _34.4b 4 34.97 mT min Max Secondary fluorescence feature E _34.5b 5 35.24 mT Max min Secondary fluorescence feature E _34.6b 6 35.35 mT min Max Secondary fluorescence feature E _34.7b 7 35.74 mT Max min Secondary fluorescence feature E _34.8b 8th 36.03 mT min Max Secondary fluorescence feature E _34.9b 9 36.30 mT Max min Secondary fluorescence feature E _34.10a 10 36.44 mT min Max Secondary fluorescence feature E _34.11b 11 36.67 mT Max min Secondary fluorescence feature E _34.12b 12 36.80 mT min Max Secondary fluorescence feature E _34.13b 13 36.97 mT min min Secondary fluorescence feature 51.0mT E _51.0.0 0 51.00 mT min Max Main fluorescent feature 59.5mT _E59.5.0 0 59.50 mT min Max Main fluorescent feature 102.4mT E _102.4,9a 9 97.10 mT Max min Secondary fluorescence feature E _102.4,8a 8th 97.60 mT min Max Secondary fluorescence feature E _102.4,7a 7 98.00 mT Max min Secondary fluorescence feature E _102.4,6a 6 98.40 mT min Max Secondary fluorescence feature E _102.4,5a 5 98.90 mT Max min Secondary fluorescence feature E _102.4,4a 4 99.50 mT min Max Secondary fluorescence feature E _102.4,3a 3 100.10 mT Max min Secondary fluorescence feature E _102.4,2a 2 101.10 mT min Max Secondary fluorescence feature E _102.4,1a 1 101.80 mT Max min Secondary fluorescence feature E _102.4.0 0 102.40 mT min Max Main fluorescent feature E _102.4,1b 1 103.10 mT Max min Secondary fluorescence feature E _102.4,2b 2 103.80 mT min Max Secondary fluorescence feature E _102.4,3b 3 104.80 mT Max min Secondary fluorescence feature E _102.4,4b 4 105.50 mT min Max Secondary fluorescence feature E _102.4,5b 5 106.10 mT Max min Secondary fluorescence feature E _102.4,6b 6 106.60 mT min Max Secondary fluorescence feature E _102.4,7b 7 107.00 mT Max min Secondary fluorescence feature E _102.4,8b 8th 107.30 mT min Max Secondary fluorescence feature E _102.4,9b 9 107.70 mT Max min Secondary fluorescence feature *) Also referred to in this document as the characteristic magnetic flux density B of the fluorescence feature. The respective characteristic magnetic flux density B of the respective fluorescence feature is taken from the drawings. The document presented here therefore explicitly recommends that when reworking the technical teaching disclosed here, a previous remeasurement of the precise values of the characteristic magnetic flux densities B. The values could possibly be provided with an offset of max. +/-1mT and a proportional error of 1% be.

Essentially

The term “essentially means in the sense of the document presented here that deviations from an ideal value are permitted, but the resulting technical effects only impair the intended purpose of the method or device so little that the usability of the technical device or device technical process is not or only so slightly impaired for a user that the user evaluates the real technical effect as sufficient in comparison to the ideal technical effect.

Crystal (HDNV)

The object, which the text presented here refers to as a crystal (HDNV), preferably comprises a single-crystalline material. Unless it is a single-crystalline material, the partial crystals should preferably be single-crystalline and preferably aligned in the same way that the fluorescence features are expressed in essentially the same way. The material of the crystal (HDNV) is preferably diamond.

For this purpose, the document presented here refers to Scripture DE 10 2021 132 783 A1 .

However, the principles disclosed in the document presented here can also be used with other crystalline materials. However, diamond is particularly suitable because cooling the electron spin configuration to a few mK is easily possible by irradiation with pump radiation (LB) and the T ₂ times, especially those of NV centers, are relatively long. In some places in this text only Dimant is mentioned. Other crystals can also be used here. In the case of using other crystals made of materials other than diamond, the devices and methods disclosed in this document use other paramagnetic centers with other pump radiation wavelengths (λ _pmp ) and with other fluorescence wavelengths (λ _fl ). Of particular interest here are silicon crystals, germanium crystals and mixed crystals from elements from main group IV of the periodic table. In some applications the crystals are isotopically pure. Isotopes purely in the sense of the document presented here is a material when the concentration of isotopes other than the base isotopes that dominate the material of the crystal (HDNV) is so low that the technical purpose in one for production and sale of products of sufficient dimensions with an economically sufficient production yield is achieved. This means that disturbances caused by such isotopic impurities do not disturb the functionality of the paramagnetic centers or at most only disturb them to a sufficiently small extent. In relation to diamond as the material of the crystal (HDNV), this means that the diamond preferably consists essentially of ¹² C isotopes as base isotopes that have no magnetic moment. This can be seen in such a way that, for example, in the fluorescence intensity curve and/or the fluorescence delay curve, the secondary fluorescence features (E _102.4.9a , E _102.4.8a , E _102.4.7a , E _102.4.6a , E _102.4.5a , E _102.4.4a , E _{102.4 ,3a} , E _102.4,2a , E _102.4,1a , E _102.4,1b , E 102.4,2b , E _102.4,3b , E _102.4,4b , E _102.4,5b , E _102.4,6b , _{E 102.4,7b ,} E _{102.4 ,8b} , E _102.4,9b ) of the 102.4mT main fluorescence feature (E _102.4,0 ) is not or less pronounced. Conversely, it may be desirable that the secondary fluorescence features (E _102.4,9a , E _102.4,8a , E _102.4,7a , E _102.4,6a , E _102.4,5a , E _102.4,4a , E _102.4,3a , E _102.4,2a , E _102.4,1a , E _102.4,1b , E 102.4,2b, E _102.4,3b , E _102.4,4b , E _102.4,5b , E _102.4,6b , E _102.4,7b , _{E 102.4,8b ,} E _102.4,9b ) of the 102.4mT main fluorescence feature (E _102.4.0 ) are particularly pronounced, as this enables improved interpolation and calibration. In relation to diamond as the material of the crystal (HDNV), this means that in order to increase the intensity of the secondary fluorescence features, the diamond preferably consists essentially of ¹³ C isotopes as base isotopes, which have a magnetic moment. A less preferred possibility is that in order to increase the intensity of the secondary fluorescence features, the diamond preferably comprises an increased proportion of ¹³ C isotopes as base isotopes that have a magnetic moment. The document presented here assumes the following distribution as a normal isotope distribution: isotope Proportion K ₀ of the isotopes without magnetic moment at 100% C Isotope ¹² C 98.94% Isotope ¹⁴ C Sense Total proportion K _0G of the isotopes without magnetic moment at 100% C 98.94% Total proportion K _1G of the isotopes with a magnetic moment of 100% C 1.06%

The document presented here considers a reduction in the factor K _1G of more than 10%, or better than 25%, to be an isotopically pure diamond crystal (HDNV). An increase in the factor K _1G by more than 10% and/or better by more than 25% and/or better by more than 50% and/or by more than 100% and/or better by more than 250% and/or better by more than 500% and/or better by more than 1000% and/or better by more than 2500% and/or better by more than 5000% (on K _1G >50%) the document presented here summarizes as an isotopically pure diamond crystal ( HDNV) with increased secondary fluorescence features. The use of such diamonds for quantum technological systems in the sense of the document presented here and/or in the sense of the quantum technological devices and methods, in particular in the sense of the quantum technological sensor devices and measurement methods of the documents DE 10 2020 101 784 B3 , DE 20 2020 106 110 U , PCT / DE 2020 / 100 953 , PCT/EP 2019/079 992 , PCT/EP 2020/068 110 , PCT/EP 2020/070 485 , PCT / DE 2021 / 100 069 , PCT / DE 2020 / 100 827 , WO 2020 239 172 A1 ( PCT / DE 2020 / 100 430 ) WO 2001 073 935 A1 and WO 2021 013 308 A1 ( PCT / DE 2020 / 100 648 ) and the writings cited in these are part of the disclosure presented here to the extent permitted by the respective law of the country of registration.

What is written here applies to the entire text presented here.

Pump radiation λ _pmp

definition

The preceding parts of the description use the term pump radiation LB for pumping the paramagnetic centers of the crystals or the diamond nanocrystals ND, which preferably include diamond. The pump radiation LB has a pump radiation wavelength λ _pmp . If impurity centers other than NV centers are used in diamond, a proposed device or a proposed method can use light or electromagnetic radiation of other pump radiation wavelengths λ _pmp as pump radiation LB. So that this pump radiation LB with the pump radiation wavelength λ _pmp can reach the paramagnetic centers in the crystals, the structure of any electrical lines and other structures on the surface of the crystals should allow the pump radiation LB to pass in the direction of the respective paramagnetic centers Allow centers. The surfaces of the crystals or diamond nanocrystals ND are preferably free of such lines and structures.

The sensor systems proposed here now preferably use the HD-NV diamonds (HDNV) with a respective high density of paramagnetic centers in the form of NV centers as sensor elements (SE, 14305), which _have the intensity I of the fluorescence radiation FL of the paramagnetic centers Detect irradiation with pump radiation LB. The pump radiation LB with the pump radiation wavelength λ _pmp causes the respective paramagnetic center or centers or the group or groups of paramagnetic centers in the crystals or diamond nanocrystals ND to emit fluorescence radiation FL with a fluorescence wavelength λ _fl when irradiated with the pump radiation LB the pump radiation wavelength λ _pmp . Typically, when using NV centers in diamond as paramagnetic centers of the crystals or diamond nanocrystals ND, the fluorescence wavelength λ _fl of the fluorescence radiation FL of the NV centers is such that they appear red. It has been shown that in connection with NV centers in diamond as paramagnetic centers of the crystals or diamond nanocrystals ND, in principle light with a pump radiation wavelength λ _pmp of the pump radiation LB of at most 700nm and at least 500nm especially as pump radiation

LB is suitable. In connection with the use of crystals of other materials instead of the diamond nano-crystals ND or as a supplement for the sensor element SE and corresponding other paramagnetic centers, completely different wavelength ranges of the pump radiation wavelength λ _pmp of the pump radiation LB can fulfill the same functions in the sensor system then modified in this way . Therefore, the NV centers here represent only an example of an embodiment of such a paramagnetic center. In particular when using an NV center in diamond as a paramagnetic center in the crystals or diamond nanocrystals ND, the pump radiation LB should have a pump radiation wavelength λ _pmp in a wavelength range of 400 nm to 700 nm wavelength and/or better 450 nm to 650 nm and/or better 500 nm to 550 nm and/or better 515 nm to 540 nm. A wavelength of 532 nm is clearly preferred as the pump radiation wavelength λ _pmp . Light or electromagnetic pump radiation LB, which is used to perform the same functions when using other paramagnetic centers, especially in materials other than NV centers in diamond, are also possible. The proposed sensor systems are therefore also suitable for other paramagnetic centers, such as SiV center and/or TiV center and/or GeV center and/or SnV center and/or NiN4 center and/or PbV center and/or ST1 center etc. applicable. However, the NV center in diamond is particularly suitable and particularly good, for example as described above, and can be produced in high density with high production yields. Expediently, the pump radiation LB of the respective pump radiation source, here the light source LED, which is preferably a laser or an LED, is pulsed depending on a pulsed alternating component of the LED modulation signal S5w by means of the transmission signal S5. The LED modulation signal S5w is used as a measurement signal, ie as a reference signal for a look-in amplifier, here the multiple correlator LIV, to convert the converted into modulated electrical currents, in particular photoelectron currents or voltages, for example a receiver output signal S0 Modulation of the intensity I _is to amplify the fluorescent radiation FL with low noise. It was recognized that the pulsed pulse modulation of the pump radiation LB and thus the pulsed pulse modulation of the alternating component of the transmission signal S5 should preferably not have a 50% duty cycle. The alternating component of the transmission signal S5 has an amplitude of the alternating component of the transmission signal S5. At the beginning of a modulation signal period T _p, the value of the transmission signal S5 is the value of the direct component of the transmission signal S5 minus the value of the amplitude of the alternating component of the transmission signal S5. The value of the transmission signal S5 then increases to the value of the sum of the value of the amplitude of the alternating component of the transmission signal S5 plus the value of the direct component of the transmission signal S5. For a modulation signal plateau time, the value of the transmission signal S5 then essentially remains at this value level, in order to then drop with a modulation signal decay time to the value of the difference value of the direct component of the transmission signal S5 minus the value of the amplitude of the alternating component of the transmission signal S5. The value of the transmission signal S5 then essentially remains at this value until the end of the modulation signal period T _p, the value of the transmission signal S5 then again with a modulation signal rise time to the value of the sum of the amplitude of the alternating component of the transmission signal S5 plus the value of the direct component of the transmission signal S5 increases. Preferably, the maximum value of the pulses of the alternating component of the transmission signal S5 is maximized in the form of the sum of the amplitude of the alternating component of the transmission signal S5 plus the value of the direct component of the transmission signal S5 in order to achieve a maximum intensity of the pump radiation LB at the times in which the pump radiation source , here the light source LED, emits pump radiation LB. This has the purpose of maximizing the contrast, since the contrast does not depend linearly on the intensity of the pump radiation LB that reaches the paramagnetic centers and increases pump radiation LB to large intensities. This is for individual NV centers in diamond, i.e. not for HD-NV diamonds as described here, for example from Staacke, R., John, R., Wunderlich, R., Horsthemke, L, Knolle, W., Laube, C, Glösekötter, P., Burchard, B., Abel, B., Meijer, J. (2020), “Isotropy Scalar Quantum Sensing of Magnetic Fields for Industrial Application”, Adv. Quantum Technol., doi :10.1002/qute.202000037, known. We refer in particular to the 3b and 3d that writing. Through a high density of paramagnetic centers in the diamond nanocrystals ND, such as through a high density of NV centers such as in an HD-NV diamond, as described in the writings DE 10 2021 132 780 A1 , DE 10 2021 132 781 A1 , DE 10 2021 132 782 A1 , DE 10 2021 132 783 A1 , DE 10 2021 132 784 A1 , DE 10 2021 132 785 A1 , DE 10 2021 132 786 A1 , DE 10 2021 132 787 A1 , DE 10 2021 132 788 A1 , DE 10 2021 132 790 A1 , DE 10 2021 132 791 A1 , DE 10 2021 132 793 A1 , DE 10 2021 132 794 A1 ,
is described, the contrast can be increased beyond that shown in those writings.

The duty cycle of the transmission signal S5 is defined as the modulation signal pulse duration divided by the modulation signal period T _p . Modulation signal pulse duration plus modulation signal complementary time are equal to the modulation signal period. Preferably, the alternating component of the transmission signal S5 is pulse modulated with a duty cycle of the alternating component of the transmission signal S5 of less than 50% and/or better of less than 40% and/or better of less than 30% and/or better of less than 20% and/or better of less than 10%. It is therefore preferably an ultra-short pulse with the highest possible amplitude. Accordingly, the LED modulation signal S5w is therefore preferably pulse modulated with a duty cycle of less than 50% and/or better less than 40% and/or better less than 30% and/or better less than 20% and/or better less than 10%. It is therefore preferably an ultra-short pulse. This ultra-short pulse is preferably converted with the greatest possible amplification into a corresponding short, most intense intensity pulse of the intensity of the pump radiation LB. Since the pump radiation source, here the light source LED, is controlled with the transmission signal S5, it typically reproduces the transmission signal S5 with a delay of a transmission delay. For the calculation of many applications, this transmission delay can be assumed to be 0 s for simplicity. The pump radiation pulse duration is defined here so that the intensity pulse of the intensity of the pump radiation LB has a pump radiation intensity maximum and that the pump radiation pulse duration of an intensity pulse of the pump radiation LB with the first time of exceeding 50% of the intensity value of the pump radiation intensity maximum minus the possibly existing bias value of the Intensity of the pump radiation LB, by the current intensity of the intensity pulse of the pump radiation LB minus the possibly existing bias value of the intensity of the pump radiation LB and that the pump radiation pulse duration of an intensity pulse of the pump radiation LB begins with the second point in time when the intensity value of the pump radiation intensity maximum falls below 50% minus the bias value, if any, of the intensity of the pump radiation LB, ending with the current intensity of the intensity pulse of the pump radiation LB minus the bias value, if any, of the intensity of the pump radiation LB.

ZPL table

The table is just an exemplary compilation of some possible paramagnetic centers found in crystals that can perform the function of the diamond nanocrystals ND in this document. The functionally equivalent use of other paramagnetic centers in other materials of the crystals is expressly possible. Testing is necessary for crystals and/or paramagnetic centers other than NV centers. The pump radiation wavelengths λ _pmp of the pump radiation LB are also exemplary. Other pump radiation wavelengths λ _pmp are generally possible if they are shorter than the wavelength of the ZPL to be excited. Material defect center ZPL exemplary reference of pump radiation Crystals wavelength (λ _pmp ) ND diamond NV Center 520nm, 532nm diamond SiV Center 738 nm 685 nm /2/, /3/, /4/ diamond GeV Center 602 nm 532 nm /4/, /5/ diamond SnV center 620 nm 532 nm /4/, /6/ diamond PbV center 520nm, 450 nm /4/, /7/ 552 nm /4/, /7/ 715 nm 532 nm /7/ diamond ST1 center 555 nm 532 nm /15/ diamond TR12 Center 471 nm 410 nm /16/ silicon G Center 1278.38 nm 637 nm /8th/ Silicon carbide V _SI Center 862 nm(V1) 4H, 1330 nm /1/, /9/, /10/ 858.2 nm(V1') 4H 1330 nm /1/, /9/, /10/ 917 nm(V2) 4H, 1330 nm /1/, /9/, /10/ 865 nm(V1) 6H, 1330 nm /1/, /9/, /10/ 887 nm(V2) 6H, 1330 nm /1/, /9/, /10/ 907 nm(V3) 6H 1330 nm /1/, /9/, /10/ Silicon carbide DV center 1078-1132 nm 6H 1330 nm /9/ Silicon carbide V _C V _SI center 1093-1140nm 6H 1330 nm /9/ Silicon carbide CAV Center 648.7nm 4H, 6H, 3C 1330 nm /9/ 651.8nm 4H, 6H, 3C 1330 nm /9/ 665.1nm 4H, 6H, 3C 1330 nm /9/ 668.5nm 4H, 6H, 3C 1330 nm /9/ 671.7nm 4H, 6H, 3C 1330 nm /9/ 673nm 4H, 6H, 3C 1330 nm /9/ 675.2nm 4H, 6H, 3C 1330 nm /9/ 676.5nm 4H, 6H, 3C 1330 nm /9/ Silicon carbide N _C V _SI Center 1180nm-1242nm 6H 1330 nm /9/, /13/, /14/

List of reference literature for the table above

1. /1/ Marina Radulaski, Matthias Widmann, Matthias Niethammer, Jingyuan Linda Zhang, Sang-Yun Lee, Torsten Rendler, Konstantinos G. Lagoudakis, Nguyen Tien Son, Erik Janzen, Takeshi Ohshima, Jörg Wrachtrup, Jelena Vučkovic, “Scalable Quantum Photonics with Single Color Centers in Silicon Carbide,” Nano Letters 17 (3), 1782-1786 (2017), DOI: 10.1021/acs.nanolett.6b05102, arXiv:1612.02874
2. /2/ C. Wang, C. Kurtsiefer, H. Weinfurter, and B. Burchard, “Single photon emission from SiV centers in diamond produced by ion implantation” J. Phys. B: At. Mol.Opt. Phys., 39(37) , 2006
3. /3/ Björn Tegetmeyer, “Luminescence properties of SiV-centers in diamond diodes” doctoral thesis, University of Freiburg, January 30, 2018
4. /4/ Carlo Bradac, Weibo Gao, Jacopo Forneris, Matt Trusheim, Igor Aharonovich, “Quantum Nanophotonics with Group IV defects in Diamond”, DOI: 10.1038/s41467-020-14316-x, arXiv:1906.10992
5. /5/ Rasmus Høy Jensen, Erika Janitz, Yannik Fontana, Yi He, Olivier Gobron, Ilya P. Radko, Mihir Bhaskar, Ruffin Evans, Cesar Daniel Rodriguez Rosenblueth, Lilian Childress, Alexander Huck, Ulrik Lund Andersen, “Cavity-Enhanced Photon “Emission from a Single Germanium-Vacancy Center in a Diamond Membrane”, arXiv:1912.05247v3 [quant-ph] 25 May 2020
6. /6/ Takayuki Iwasaki, Yoshiyuki Miyamoto, Takashi Taniguchi, Petr Siyushev, Mathias H. Metsch, Fedor Jelezko, Mutsuko Hatano, “Tin-Vacancy Quantum Emitters in Diamond,” Phys. Rev. Lett. 119, 253601 (2017), DOI: 10.1103/PhysRevLett.119.253601, arXiv:1708.03576 [quant-ph]
7. /7/ Matthew E. Trusheim, Noel H. Wan, Kevin C. Chen, Christopher J. Ciccarino, Ravishankar Sundararaman, Girish Malladi, Eric Bersin, Michael Walsh, Benjamin Lienhard, Hassaram Bakhru, Prineha Narang, Dirk Englund, “Lead-Related Quantum Emitters in Diamond” Phys. Rev. B 99, 075430 (2019), DOI: 10.1103/PhysRevB.99.075430, arXiv:1805.12202 [quant-ph]
8. /8/ M. Hollenbach, Y. Berencén, U. Kentsch, M. Helm, G. V. Astakhov “Engineering telecom single-photon emitters in silicon for scalable quantum photonics” Opt. Express 28, 26111 (2020), DOI: 10.1364/OE .397377, arXiv:2008.09425 [physics.app-ph]
9. /9/ Castelletto and Alberto Boretti, “Silicon carbide color centers for quantum applications” 2020 J. Phys. Photonics2 022001
10. /10/ V. Ivády, J. Davidsson, N. T. Son, T. Ohshima, I. A. Abrikosov, A. Gali, “Identification of Si-vacancy related room-temperature qubits in 4H silicon carbide,” Phys. Rev. B, 2017, 96,161114
11. /11/ J. Davidsson, V. Ivády, R. Armiento, N. T. Son, A. Gali, I. A. Abrikosov, “First principles predictions of magneto-optical data for semiconductor point defect identification: the case of divacancy defects in 4H-SiC” , New J. Phys., 2018, 20, 023035
12. /12/ J. Davidsson, V. Ivády, R. Armiento, T. Ohshima, NT Son, A. Gali, IA Abrikosov “Identification of divacancy and silicon vacancy qubits in 6H-SiC,” Appl. Phys. Lett. 2019, 114, 112107
13. /13/ S. A. Zargaleh, S. Hameau, B. Eble, F. Margaillan, H. J. von Bardeleben, J. L. Cantin, W. Gao, “Nitrogen vacancy center in cubic silicon carbide: a promising qubit in the 1.5µm spectral range for photonic quantum networks” Phys. Rev. B, 2018, 98, 165203
14. /14/ S. A. Zargaleh et al “Evidence for near-infrared photoluminescence of nitrogen vacancy centers in 4H-SiC” Phys. Rev.B, 2016, 94, 060102
15. /15/ P. Balasubramanian, MH Metsch, Reddy, R. Prithvi, J. Lachlan, NB Manson, MW Doherty, F. Jelezko, “Discovery of ST1 centers in natural diamond” Nanophotonics, Vol. 8, No. 11, 2019, pages 1993 -2002 . https://doi.org/10.1515/nanoph-2019-0148
16. /16/ J. Foglszinger, A. Denisenko, T. Kornher, M. Schreck, W. Knolle, B. Yavkin, R. Kolesov, J. Wrachtrup “ODMR on Single TR12 Centers in Diamond” arXiv:2104.04746v1 [physics. optics]

Radio waves vs. microwaves

For the purposes of the document presented here, radio waves in the low frequency range are electromagnetic radiation waves in a frequency range from 3Hz to 30kHz, the low frequency range.

For the purposes of the document presented here, radio waves in the radio wave frequency range are electromagnetic radiation waves in a frequency range from 30kHz to 300MHz, the radio wave frequency range.

For the purposes of the document presented here, microwaves in the microwave frequency range are electromagnetic radiation waves in a frequency range from 300MHz to 300GHz, the microwave frequency range.

Stripline technology for waveguides

1. 1. Leiterbahnen: In der Streifenleitungstechnologie umfassen die Leiterbahnen (Signalleitungen 1310, 1320, 1330, 6810, 6820) Metallstreifen, die auf dem Substrat (Trägersubstrat 1360) angebracht sind. Diese Metallstreifen Leiterbahnen (Signalleitungen 1310, 1320, 1330, 6810, 6820) dienen zur Übertragung des elektrischen Signals.
2. 2. Substrat(Trägersubstrat 1360): Das Substrat (Trägersubstrat 1360) ist eine elektrisch isolierende Schicht, auf der die Leiterbahnen (Signalleitungen 1310, 1320, 1330, 6810, 6820) platziert werden. Typischerweise besteht das Substrat (Trägersubstrat 1360) aus Materialien wie FR-4 (Flameresistent-4) oder PTFE (Polytetrafluorethylen) oder aus halbleiten Materialien, wie beispielsweise Stücken von Halbleiterwafern, beispielsweise Stücken von CMOS-Wafern oder beispielsweise Stücken von BiCMOS-Wafern beispielsweise Stücken von Wafern aus einer Bipolar-Technologie und/oder beispielsweise Stücken von MEMS-Wafern und/oder beispielsweise Stücken von MEOS-Wafern (MEOS= micro electro optical system) und/oder beispielsweise Stücken von MOEMS-Wafern etc. Beispielsweise können diese Stücke von CMOS-Wafern oder Stücken von BiCMOS-Wafern oder Stücke von Wafern aus einer Bipolar-Technologie oder Stücke eines Wafers aus einem III/V-Material oder dergleichen und/oder Stücke von MEMS-Wafern und/oder Stücke von MEOS-Wafern (MEOS= micro electro optical system) und/oder Stücke von MOEMS-Wafern mikroelektronische Schaltkreise und Funktionselemente und/oder mikrooptische Funktionselemente und/oder Mikromechanische Funktionselemente und/oder mikrofluidische Funktionselemente umfassen. Die se wiederum können Unterfunktionselemente umfassen, die mit den paramagnetischen Zentren und/oder NV-Zentren der Sensorelementschicht 14305 und oder Sensorelementen SE wechselwirken.

• 3. Dielektrikum: Das Dielektrikum ist das isolierende Material, das die Leiterbahnen (Signalleitungen 1310, 1320, 1330, 6810, 6820) umgibt und sie voneinander trennt. Es wird verwendet, um die Signalintegrität der Signale auf den Leiterbahnen (Signalleitungen 1310, 1320, 1330, 6810, 6820) zu erhalten und unerwünschte Signalverluste zu minimieren. Bei Streifenleitungen (z.B. Wellenleiter 1380, 1880, 2380, 6880, 6980) wird häufig Luft oder ein spezielles Dielektrikum mit niedrigem Verlust wie beispielsweise PTFE verwendet.
• 4. Impedanzkontrolle (Kontrolle des Wellenwiderstands): In der Streifenleitungstechnologie ist die Impedanzkontrolle des Wellenwiderstands der Wellenleitungen (z.B. Wellenleiter 1380, 1880, 2380, 6880, 6980) ein wichtiger Aspekt. Die Breite und Geometrie der Leiterbahnen (Signalleitungen 1310, 1320, 1330, 6810, 6820) sowie die Eigenschaften des Dielektrikums werden so gestaltet, dass die gewünschte Impedanz (Wellenwiderstand) des Übertragungssystems erreicht wird. Dies gewährleistet eine effiziente Signalübertragung und minimiert Reflexionen.
• 5. Abschlusswiderstände (6710): Abschlusswiderstände (6710) werden am Ende einer Streifenleitung (Signalleitungen 1310, 1320, 1330, 6810, 6820) platziert, um Reflexionen zu minimieren und die Signalintegrität zu verbessern. Sie werden verwendet, um die Impedanz (Wellenwiderstand) der Streifenleitung Wellenleitungen (z.B. Wellenleiter 1380, 1880, 2380, 6880, 6980) abzuschließen und eine effiziente Signalübertragung zu gewährleisten.
• 6. Verbindungsstrukturen: In der Streifenleitungstechnologie werden verschiedene Verbindungsstrukturen wie T-Verbinder, Kreuzverbinder und S-Verbinder verwendet, um Leiterbahnen(Signalleitungen 1310, 1320, 1330, 6810, 6820) und/oder verschiedene Streifenleitungen (z.B. Wellenleiter 1380, 1880, 2380, 6880, 6980) miteinander zu verbinden, Signale zu verzweigen oder zu kombinieren.

Stripline technology for use with waveguides, particularly the exemplary waveguides mentioned herein (1380, 1880, 2380, 6880, 6980), is a method for transmitting electrical signals preferably in high frequency applications. The conductor tracks (signal lines 1310, 1320, 1330, 6810, 6820) are arranged on an insulating substrate layer (carrier substrate 1360) in order to enable efficient and controlled signal transmission. Here are some of the key functional elements of stripline technology:

1. 1. Conductor traces: In stripline technology, the conductor traces (signal lines 1310, 1320, 1330, 6810, 6820) comprise metal strips that are attached to the substrate (support substrate 1360). These metal strip conductor tracks (signal lines 1310, 1320, 1330, 6810, 6820) are used to transmit the electrical signal.
2. 2. Substrate (support substrate 1360): The substrate (support substrate 1360) is an electrically insulating layer on which the conductor tracks (signal lines 1310, 1320, 1330, 6810, 6820) are placed. Typically, the substrate (support substrate 1360) consists of materials such as FR-4 (Flame Resistant-4) or PTFE (polytetrafluoroethylene) or semiconducting materials, such as pieces of semiconductor wafers, for example pieces of CMOS wafers or, for example, pieces of BiCMOS wafers, for example pieces of wafers from a bipolar technology and/or, for example, pieces of MEMS wafers and/or, for example, pieces of MEOS wafers (MEOS = micro electro optical system) and/or, for example, pieces of MOEMS wafers, etc. For example, these pieces of CMOS -Wafers or pieces of BiCMOS wafers or pieces of wafers from a bipolar technology or pieces of a wafer made of a III/V material or the like and/or pieces of MEMS wafers and/or pieces of MEOS wafers (MEOS = micro electro optical system) and/or pieces of MOEMS wafers include microelectronic circuits and functional elements and/or micro-optical functional elements and/or micromechanical functional elements and/or microfluidic functional elements. These in turn can include sub-function elements that interact with the paramagnetic centers and/or NV centers of the sensor element layer 14305 and/or sensor elements SE.

• 3. Dielectric: The dielectric is the insulating material that surrounds the conductor tracks (signal lines 1310, 1320, 1330, 6810, 6820) and separates them from each other. It is used to maintain the signal integrity of the signals on the conductor tracks (signal lines 1310, 1320, 1330, 6810, 6820) and to minimize unwanted signal losses. Striplines (e.g. waveguides 1380, 1880, 2380, 6880, 6980) often use air or a special low-loss dielectric such as PTFE.
• 4. Impedance control (control of wave resistance): In stripline technology, impedance control of the wave resistance of wave lines (e.g. waveguide 1380, 1880, 2380, 6880, 6980) is an important aspect. The width and geometry of the conductor tracks (signal lines 1310, 1320, 1330, 6810, 6820) as well as the properties of the dielectric are designed so that the desired impedance (characteristic impedance) of the transmission system is achieved. This ensures efficient signal transmission and minimizes reflections.
• 5. Terminators (6710): Terminators (6710) are placed at the end of a stripline (signal lines 1310, 1320, 1330, 6810, 6820) to minimize reflections and improve signal integrity. They are used to complete the impedance (characteristic impedance) of stripline waveguides (e.g. waveguide 1380, 1880, 2380, 6880, 6980) and ensure efficient signal transmission.
• 6. Connection Structures: In stripline technology, various connection structures such as T-connectors, cross-connectors and S-connectors are used to connect conductor tracks (signal lines 1310, 1320, 1330, 6810, 6820) and/or various striplines (e.g. waveguides 1380, 1880, 2380, 6880, 6980) to connect with each other, to branch or combine signals.

These functional elements are fundamental to the design and operation of striplines in high frequency applications. They enable precise signal transmission and high performance in areas such as high-frequency communication, microwave and radar technology, power electronics and much more.

• „Einfache Bauelemente wie Kondensatoren und Induktivitäten lassen sich direkt durch besonders dimensionierte Streifen erzeugen. So haben lange, dünne Leiter eine induktive, dagegen breite, kurze eine kapazitive Wirkung. Neben diesen klassischen Bauelementen lassen sich noch weitere für die Hochfrequenztechnik typische Bauelemente direkt mit Streifen realisieren.

The following functional elements can be found on Wikipedia (https://de.wikipedia.org/wiki/Streifenleitung):

• “Simple components such as capacitors and inductors can be produced directly using specially sized strips. Long, thin conductors have an inductive effect, while wide, short ones have a capacitive effect. In addition to these classic components, other components typical of high-frequency technology can be implemented directly with strips.

• • Sumpf (reflexionsfreier Abschluss)
• • Impedanzanpassung, induktive oder kapazitive Kopplung
• • Reflektor, Reihenschwingkreis, Parallelschwingkreis

This includes:

• • Swamp (non-reflective closure)
• • Impedance matching, inductive or capacitive coupling
• • Reflector, series resonant circuit, parallel resonant circuit

• • Richtkoppler
• • Leistungsteiler
• • Filter (Bandpass, Bandsperre, Hochpass, Tiefpass)
• • Frequenzweichen
• • Übertrager zur Aus- und Einkopplung, Potentialtrennung, Impedanz- oder Symmetrieanpassung Diskrete Bauelemente, wie sie auf normalen Platinen verwendet werden, können auch auf eine Mikrostreifenleiterschaltung gelötet werden, wenn man ihre Abmessungen und gegenseitige Beeinflussung berücksichtigt. Besonders geeignet sind SMD-Bauteile. Teilweise werden auch SMD-Bauformen speziell für diesen Fall gestaltet. Das ist besonders bei aktiven Elementen wie Transistoren oder Dioden der Fall.”

More complex functional units can be made from these basic elements:

• • Directional coupler
• • Power divider
• • Filter (bandpass, bandstop, highpass, lowpass)
• • Crossovers
• • Transformers for coupling out and in, potential isolation, impedance or symmetry adjustment. Discrete components, such as those used on normal circuit boards, can also be soldered onto a microstrip circuit if their dimensions and mutual influences are taken into account. SMD components are particularly suitable. In some cases, SMD designs are also designed specifically for this case. This is particularly the case with active elements such as transistors or diodes.”

1. 1. Mikrostreifenleitung: Eine Mikrostreifenleitung ist eine geprägte Leiterbahn auf einer Dielektrikumsschicht, die auf einem leitenden Substrat liegt. Sie dient als Übertragungsmedium für Mikrowellensignale.
2. 2. Mikrostreifen-Übergang: Ein Mikrostreifen-Übergang ermöglicht den Anschluss von zwei Mikrostreifenleitungen mit unterschiedlichen Impedanzen.
3. 3. Mikrostreifenfilter: Ein Mikrostreifenfilter ist ein elektronisches Bauelement, das verwendet wird, um bestimmte Frequenzbereiche in einem Mikrowellensignal zu filtern. Es kann beispielsweise als Tiefpassfilter, Hochpassfilter oder Bandpassfilter ausgelegt sein.
4. 4. Mikrostreifen-Koppler: Ein Mikrostreifen-Koppler wird verwendet, um ein Mikrowellensignal von einer Mikrostreifenleitung auf eine andere zu übertragen. Es gibt verschiedene Arten von Kopplern, wie z.B. Richtkoppler, Hybridkoppler und Ringkoppler.
5. 5. Mikrostreifen-Phasenschieber: Ein Mikrostreifen-Phasenschieber ist ein Bauelement, das verwendet wird, um die Phase eines Mikrowellensignals zu ändern. Es kann für Phasenmodulation, Phasensteuerung oder Phasenanpassung eingesetzt werden.
6. 6. Mikrostreifen-Verzögerungsleitung: Eine Mikrostreifen-Verzögerungsleitung ist eine spezielle Form der Mikrostreifenleitung, die verwendet wird, um die Laufzeit von Mikrowellensignalen zu verzögern. Sie kann zur Phasenkorrektur, zur Signalverarbeitung oder zur Erzeugung von Verzögerungselementen eingesetzt werden.
7. 7. Mikrostreifen-Schaltkreiselemente: In der Mikrostreifenleitungstechnik können auch verschiedene Schaltkreiselemente realisiert werden, wie z.B. Mikrostreifen-Dioden, Mikrostreifen-Transistoren, Mikrostreifen-Induktoren und Mikrostreifen-Kapazitäten. Diese werden in der Regel für aktive Schaltungen und passive Komponenten verwendet.

Various microwave components can be implemented using microstrip line technology. Here are some of the most important ones:

1. 1. Microstrip line: A microstrip line is an embossed conductive trace on a dielectric layer that lies on a conductive substrate. It serves as a transmission medium for microwave signals.
2. 2. Microstrip junction: A microstrip junction allows the connection of two microstrip lines with different impedances.
3. 3. Microstrip Filter: A microstrip filter is an electronic device used to filter specific frequency ranges in a microwave signal. For example, it can be designed as a low-pass filter, high-pass filter or band-pass filter.
4. 4. Microstrip Coupler: A microstrip coupler is used to transmit a microwave signal from one microstrip line to another. There are different types of couplers such as directional couplers, hybrid couplers and ring couplers.
5. 5. Microstrip Phase Shifter: A microstrip phase shifter is a device used to change the phase of a microwave signal. It can be used for phase modulation, phase control or phase adjustment.
6. 6. Microstrip Delay Line: A microstrip delay line is a special form of microstrip line used to delay the travel time of microwave signals. It can be used for phase correction, signal processing or to generate delay elements.
7. 7. Microstrip circuit elements: In microstrip line technology, various circuit elements can also be realized, such as microstrip diodes, microstrip transistors, micro strip inductors and microstrip capacitances. These are typically used for active circuits and passive components.

There are many other microwave components that can be used in microstrip line technology. However, the examples mentioned should provide an overview of the basic components.

The use of these functional elements together with the sensor elements SE and/or sensor element layers 14305 in the sense of the document presented here are part of the disclosure of the document presented here.

General information about different types of waveguides

This section is intended to apply to any waveguide and therefore to the entire document.

The document presented here only mentions for the sake of completeness that, in principle, the presence of one or more sensor elements SE (1410, 1420, 1430, 7110, 7120, 2210, 2410, 2420, 2430, 4410) on a waveguide, here the exemplary differential Tri -Plate line 6980 and / or the exemplary differential microstrip line 6880 and / or the exemplary microstrip line 1330 and / or the exemplary slot line 1880 and / or the exemplary tri-plate line 2380 and / or other preferably planar waveguides is possible. More and more different types of sensor elements SE can be “fused” into one sensor element SE.

Preferably, at least one sensor element channel is assigned to each of these sensor elements SE.

If more than one sensor element channel is assigned to a sensor element SE, the sensor element should preferably have different paramagnetic centers with at least two different pump radiation wavelengths λ _pmp and preferably each sensor element channel of the at least two assigned sensor element channels should use a pump radiation wavelength λ _pmp of these pump radiation wavelengths λ _pmp , which are different from the pump radiation wavelengths λ _pmp , which the other sensor element channels of this sensor element SE use, is different.

In principle, within the meaning of this document, more than one sensor element SE can be assigned to a sensor element channel.

The document presented here only mentions for the sake of completeness that, in principle, the presence of one or more sensor elements SE (1410, 1420, 1430, 7110, 7120, 2210, 2410, 2420, 2430, 4410) on a waveguide, here the exemplary differential Tri -Plate cable 6980, is possible. One or more of the sensor elements SE can comprise nanocrystals ND with paramagnetic centers instead of the diamond nanocrystals ND and their paramagnetic centers. These nanocrystals ND with paramagnetic centers instead of the diamond nanocrystals ND and their paramagnetic centers can in particular include crystals other than diamond crystals and therefore include other paramagnetic centers than the paramagnetic centers in diamond nanocrystals ND mentioned here.

In the case of using such other nanocrystals ND and/or other paramagnetic centers in sensor elements SE, in particular the pump radiation wavelength λ _pmp of the pump radiation source, in particular the light source LED, of the sensor element channel assigned to such a sensor element SE should be adapted to these other paramagnetic centers of these possibly other nanocrystals ND be. Preferably, LED modulation frequency f _LED should be different at least between sensor element channels with different pump radiation wavelengths λ _pmp .

In the case of using such other nanocrystals ND and/or other paramagnetic centers in sensor elements SE, the other device parts of the sensor element channels and/or the parameters for their operation of the sensor element channel assigned to such a sensor element SE should also be based on these other paramagnetic centers of these possibly other ones Nanocrystals ND be adapted.

The positioning of the structure of the 2 in the two-dimensional parameter surface from total magnetic flux density B _Σ or additional magnetic flux density B _ad on the one hand and their shape depends on the nanocrystals or diamond nanocrystals ND used and the paramagnetic ones used dependent on the different centers. Typically the presence of a structure similar to the 2 for a crystal used as a diamond nanocrystal ND and its crystal material as well as the paramagnetic centers used and used in this crystal Prerequisite for the application of the technical teaching described here. If other crystals made of a material other than diamond and/or other paramagnetic centers are to be used as NV centers in diamond, the structure of the 2 or a functionally equivalent structure can be demonstrated in corresponding measured values.

The microwave frequency f _µw can therefore be used to select different paramagnetic centers. It is therefore conceivable that one or more sensor elements SE contain different nanocrystals ND with paramagnetic centers instead of the diamond nanocrystals ND and their paramagnetic centers and/or diamond nanocrystals ND with different paramagnetic centers, for example SiV centers and NV centers, include. The proposed device can therefore address different paramagnetic centers and thus possibly also different sensor elements SE by using different microwave frequencies f _µw .

As in the descriptions of the 13 to 64 and 68 to 134 shown, the sensitivity and selectivity of the respective sensor element SE with respect to the total magnetic flux density B _Σ and/or the external magnetic flux density B _ext and/or the additional magnetic flux density B _ad and/or the magnetic flux density component B _µW of the microwave signal µW.

Furthermore, the respective LED modulation frequency f _LED can be used to distinguish between the sensor elements SE with different paramagnetic centers and different associated pump radiation wavelengths λ _pmp .

Sensor element channel

A sensor element channel in the sense of the document presented here comprises a light source driver LDRV, a pump radiation source (LED), first optical means (LWL) for transporting the pump radiation LB to the sensor element SE, second optical means (LWL) for transporting the fluorescence radiation FL of the sensor element SE to the photodetector PD, a photodetector PD, means (F1) for separating the fluorescent radiation FL from the total radiation spectrum before reaching the photodetector PD, if necessary means (1380, 1880, 2380, 6880, 6980, µWG) for irradiating the sensor element SE with electromagnetic radiation Microwave signal µW, if necessary means (µWG) for generating the microwave signal µW, means (G1, S5, S5w) for modulating the intensity of the pump radiation LB of the pump radiation source (LED) with an LED modulation signal S5w, means (G1) for generating the LED -Modulation signal S5w, means (S5m, G2) for modulating the amplitude of the microwave signal µW by means of a microwave modulation signal S5m, means (G2) for generating the microwave modulation signal S5m, means (V1) for processing the receiver output signal S0 of the photodetector PD into a processed (amplified, filtered and / or digitized) receiver output signal S1, means (LIV) for carrying out a multiple correlation at least between the processed (amplified, filtered and / or digitized) receiver output signal S1, the LED modulation signal S5w and possibly the microwave modulation signal S5m to generate a correlation result, for example Transfer to the control device CTR. In the sense of the document presented here, the sensor element SE itself is not part of the sensor element channel.

A sensor system thus preferably comprises at least one sensor element SE, one or more sensor element channels and a control device CTR with memories RAM, NVM for controlling the sensor channel and for controlling the device parts of the sensor system and for communication with higher-level computer systems. Such a sensor system can preferably include, for example, further components, such as means (LCTR, LDRV, L _c ) for generating an additional magnetic flux density B _ad and/or means (MS, SIS) for measuring the total flux density B _Σ and/or means (MEV) for pattern recognition.

Potential interaction with plasmonic nanoparticles in the sensor element SE

The fluorescence radiation of the NV centers and/or the other paramagnetic centers in the crystals and/or diamond nanocrystals ND in the carrier materials TM of the sensor elements SE and in particular the fluorescence wavelength λ _fl of the fluorescence radiation FL of the NV centers and/or the other paramagnetic centers in the crystals and/or diamond nanocrystals ND in the carrier materials TM of the sensor elements SE can, for example, by means of plasmonic coupling through optional metallic nanoparticles, which are also added to the carrier materials TM of sensor elements SE in the production of the colloidal mixtures KL, be modified. In this case, for example, a carrier material TM of the colloidal mixture KL can have metallic nanoparticles with a diameter of less than 200 nm and/or less than 100 nm and/or less than 50 nm and/or less than 20 nm and/or less than 10 nm and/or less than 5 nm, which will then be used later are embedded in the solidified carrier material TM of the colloidal mixture KL. This improves applicability in special use cases.

The metallic nanoparticles then typically interact plasmonically with the NV centers and/or the other paramagnetic centers in the crystals and/or diamond nanocrystals ND in the carrier materials TM of the sensor elements SE and then influence the fluorescence radiation FL of these NV centers and / or the other paramagnetic centers in the crystals and / or diamond nano-crystals ND in the carrier materials TM of the sensor elements SE.

These metallic nanoparticles typically have gold and/or platinum and/or palladium and/or graphite and/or graphene and/or chromium and/or silicon and/or germanium and/or tin and/or sulfur and/or selenium and/or tellurium and/or magnesium and/or calcium and/or strontium and/or barium and/or titanium and/or zirconium and/or hafnium and/or chromium and/or molybdenum and/or tungsten and/or iron and/or ruthenium and/ or osmium and/or nickel and/or tin and/or cadmium and/or mercury and/or cerium and/or neodymium and/or samarium and/or gadolinium and/or dysprosium and/or erbium and/or ytterbium and/or thorium and/or proactinium and/or uranium and/or plutonium. The former are particularly preferred.

• ¹²C, ¹⁴C, ²⁸Si, ³⁰Si, ⁷⁰Ge , ⁷²Ge, ⁷⁴Ge, ⁷⁶Ge, ¹¹²Zn, ¹¹⁴Zn, ¹¹⁶Zn, ¹¹⁸Zn, ¹²⁰Z n, ¹²²Zn, ¹²⁴Zn, ¹⁶O, ¹⁸O, ³²S, ³⁴S, ³⁶S, ⁷⁴Se, ⁷⁶Se, ⁷⁸Se, ⁸⁰Se, ⁸²Se, ¹²⁰Te, ¹²²Te, ¹²⁴Te, ¹²⁶Te, ¹²⁸Te, ¹³⁰Te, ²⁴Mg, ²⁶Mg, ⁴⁰Ca, ⁴²Ca, ⁴⁴Ca, ⁴⁶Ca, ⁴⁸Ca, ⁸⁴Sr, ⁸⁶Sr, ⁸⁸Sr, ¹³⁰Ba, ¹³²Ba, ¹³⁴Ba, ¹³⁶Ba, ¹³⁸Ba, ⁴⁶Ti, ⁴⁸Ti, ⁵⁰Ti, ⁹⁰Zr, ⁹⁰Zr, ⁹²Zr, ⁹⁴Zr, ⁹⁶Zr, ¹⁷⁴Hf, ¹⁷⁶Hf, ¹⁷⁸Hf, ⁵⁰Cr, ⁵²Cr, ⁵³Cr, ⁹²Mo, ⁹⁴Mo, ⁹⁶Mo, ⁹⁸Mo, ¹⁰⁰Mo, ¹⁸⁰W, ¹⁸²W, ¹⁸⁴W, ¹⁸⁶W, ⁵⁴Fe, ⁵⁶Fe, ⁵⁸Fe, ⁹⁶Ru, ⁹⁸Ru, ¹⁰⁰Ru, ¹⁰²Ru, ¹⁰⁴Ru, ¹⁸⁴Os, ¹⁸⁶Os, ¹⁸⁸OS, ¹⁹⁰Os, ¹⁹²Os, ⁵⁸Ni, ⁶⁰Ni, ⁶²Ni, ⁶⁴Ni, ¹⁰²Pd, ¹⁰²Pd, ¹⁰⁴Pd, ¹⁰⁶Pd, ¹⁰⁸Pd, ¹¹⁰Pd, ¹⁹⁰Pt, ¹⁹²Pt, ¹⁹⁴Pt, ¹⁹⁶Pt, ¹⁹⁸Pt, ⁶⁴Zn, ⁶⁶Zn, ⁶⁸Zn, ⁷⁰Zn, ¹⁰⁶Cd, ¹⁰⁸Cd, ¹¹⁰Cd, ¹¹²Cd, ¹¹⁴Cd, ¹¹⁶Cd, ¹⁹⁶Hg, ¹⁹⁸Hg, ²⁰⁰Hg, ²⁰²Hg, ²⁰⁴Hg, ¹³⁶Ce, ¹³⁸Ce, ¹⁴⁰Ce, ¹⁴²Ce, ¹⁴²Nd, ¹⁴⁴ Nd, ¹⁴⁶Nd, ¹⁴⁸Nd, ¹⁵⁰Nd, ¹⁴⁴Sm, ¹⁴⁶Sm, ¹⁴⁸Sm, ¹⁵⁰Sm, ¹⁵²Sm, ¹⁵⁴Sm, ¹⁵²Gd, ¹⁵⁴Gd, ¹⁵⁶Gd, ¹⁵⁸Gd, ¹⁶⁰Gd, ¹⁵⁶Dy, ¹⁵⁸Dy ¹⁶⁰Dy, ¹⁶²Dy, ¹⁶⁴Dy, ¹⁶²Er, ¹⁶⁴Er, ¹⁶⁶Er, ¹⁶⁸Er, ¹⁷⁰Er, ¹⁶⁸Yb, ¹⁷⁰Yb, ¹⁷²Yb, ¹⁷⁴Yb, ¹⁷⁶Yb, ²³²Th, ²³⁴Pa, ²³⁴U, ²³⁸U, ²⁴⁴Pu.

The atoms of the metal of these optional nanoparticles include one or more elements of the periodic table. Each of these elements occurs in different isotopes in nature with a respective natural isotope mixing ratio. Each isotope of an element has a natural proportion corresponding to the natural isotope mixing ratio of this element. With regard to these shares and the values, the document presented here refers to the German patent application DE 10 2020 125 178 A1 the applicant. These isotopes each have or do not have a nuclear magnetic moment μ depending on the isotope. For at least one element that the metallic nanoparticles have, the metallic nanoparticles preferably have an increased proportion in the isotope mixing ratio compared to the natural proportion of the isotope mixing ratio for at least one of the following isotopes:

• ¹² C, ¹⁴ C, ²⁸ Si, ³⁰ Si, ⁷⁰ Ge, ⁷² Ge, 74 Ge, ⁷⁶ Ge, ¹¹² Zn, ¹¹⁴ Zn, ¹¹⁶ Zn, ¹¹⁸ Zn, ¹²⁰ Z n, ^{122 Zn, 124 Zn} , ¹⁶ O, ¹⁸ O, ³² S, ³⁴ S, ³⁶ S, ⁷⁴ Se, ⁷⁶ Se, ⁷⁸ Se, ⁸⁰ Se, 82 Se, ¹²⁰ Te, ¹²² Te, ¹²⁴ Te, ¹²⁶ Te ^{, 128} Te, ¹³⁰ Te, ²⁴ Mg, ²⁶ Mg, ⁴⁰ Ca, ⁴² Ca, ⁴⁴ Ca, ⁴⁶ Ca, 48 Ca, ⁸⁴ Sr, ⁸⁶ Sr, ⁸⁸ Sr, ¹³⁰ Ba, ¹³² Ba, ¹³⁴ Ba, ¹³⁶ Ba, ¹³⁸ Ba, ⁴⁶ Ti ^{, 48 Ti} , ⁵⁰ Ti, ⁹⁰ Zr , ⁹⁰ Zr, ⁹² Zr, ⁹⁴ Zr, ⁹⁶ Zr, ¹⁷⁴ Hf, ¹⁷⁶ Hf, ¹⁷⁸ Hf, ⁵⁰ Cr, ⁵² Cr, ⁵³ Cr, ⁹² Mo, ⁹⁴ Mo, ⁹⁶ Mo, ⁹⁸ Mo, ¹⁰⁰ Mo, ¹⁸⁰ W, ¹⁸² W, ¹⁸⁴ W, ¹⁸⁶ W, ⁵⁴ Fe, ⁵⁶ Fe, ⁵⁸ Fe, ⁹⁶ Ru, ⁹⁸ Ru, ¹⁰⁰ Ru, ¹⁰² Ru, ¹⁰⁴ Ru, ^{184 Os, 186 Os} , ¹⁸⁸ OS, ¹⁹⁰ Os, ¹⁹² Os, ⁵⁸ Ni, ⁶⁰ Ni, ⁶² Ni, ⁶⁴ Ni ^{, 102} Pd, 102 Pd, ¹⁰⁴ Pd, ¹⁰⁶ Pd, ¹⁰⁸ Pd, ¹¹⁰ Pd, ¹⁹⁰ Pt, ¹⁹² Pt, ¹⁹⁴ Pt, ¹⁹⁶ Pt, ¹⁹⁸ Pt, ⁶⁴ Zn, ⁶⁶ Zn, ⁶⁸ Zn ^{, 70} Zn, ¹⁰⁶ Cd, ¹⁰⁸ Cd, ¹¹⁰ Cd, ¹¹² Cd, 114 Cd, ¹¹⁶ Cd, ¹⁹⁶ Hg, ¹⁹⁸ Hg, ²⁰⁰ Hg, ²⁰² Hg, ²⁰⁴ Hg, ¹³⁶ Ce, ¹³⁸ Ce, ¹⁴⁰ Ce, ¹⁴² Ce, ¹⁴² Nd, ¹⁴⁴ Nd, ¹⁴⁶ Nd ^{, 148} Nd, ¹⁵⁰ Nd, 144 Sm, ¹⁴⁶ Sm, ¹⁴⁸ Sm, ¹⁵⁰ Sm, ¹⁵² Sm, ¹⁵⁴ Sm, ¹⁵² Gd, ¹⁵⁴ Gd, ¹⁵⁶ Gd, ¹⁵⁸ Gd, ¹⁶⁰ Gd, ¹⁵⁶ Dy, ¹⁵⁸ Dy ¹⁶⁰ Dy ^{, 162} Dy, ¹⁶⁴ Dy, ¹⁶² Er, ¹⁶⁴ Er, ¹⁶⁶ Er, 168 Er, 170 Er, ¹⁶⁸ Yb, ¹⁷⁰ Yb, ¹⁷² Yb, ¹⁷⁴ Yb ^{, 176} Yb, ²³² Th, ²³⁴ Pa, ²³⁴ U, ²³⁸ U, ²⁴⁴ Pu.

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QUOTES INCLUDED IN THE DESCRIPTION

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Claims (10)

Optical waveguide (LWL) with a sensor element (SE), wherein the sensor element (SE) has a carrier material (TM) and wherein a large number of diamonds (DM) are embedded in the carrier material (TM) and wherein one or more or all diamonds (DM) these diamonds (DM) have NV centers (NVZ) and/or other paramagnetic centers and wherein the NV centers (NVZ) of the sensor element (SE) and/or the other paramagnetic centers of the sensor element (SE) upon irradiation with pump radiation (LB ) emit at least one fluorescent radiation (FL), characterized in that the carrier material (TM) is a radiation-hardened carrier material (TM) and that the carrier material (TM) is suitable for radiation with a pump radiation wavelength (λ _pmp ) of the pump radiation (LB) with which the NV centers (NVZ) and/or the other paramagnetic centers are pumped, is essentially transparent and that the carrier material (TM) is suitable for radiation with a fluorescence wavelength (λ _fl ) of the fluorescence radiation (LB) of the NV centers (NVZ) and/or or the other paramagnetic centers is essentially transparent. Method for producing an optical waveguide (LWL), in particular Claim 1 , with the steps of providing (140) an optical waveguide (LWL), the optical waveguide (LWL) having a first end and a second end; Providing (145) a liquid carrier material (TM) that can be hardened by means of electromagnetic radiation of a curing wavelength (λ _H ), wherein a large number of diamonds (DM) and / or crystals are embedded in the carrier material (TM) and wherein one or more or all diamonds (DM) of these diamonds (DM) and/or crystals have NV centers (NVZ) and/or other paramagnetic centers and wherein the NV centers (NVZ) of the carrier material (TM) and/or the other paramagnetic centers of the carrier material (TM ) emit at least one fluorescent radiation (FL) when irradiated with pump radiation (LB) of a pump radiation wavelength (λ _pmp ); Wetting (150) the first end of the optical waveguide (LWL), in particular over a wetting length (L _B ) or in a wetting area, with the carrier material (TM) which has the plurality of embedded diamonds (DM) and / or crystals; Irradiating (155) the carrier material (TM) in the area of the first end (ELWL1) of the optical waveguide (LWL) with electromagnetic curing radiation, the wavelength of this electromagnetic radiation, the curing wavelength (λ _H ), being selected so that the carrier material (TM) at least partially hardens at the first end (ELWL1) of the optical waveguide (LWL) in the irradiated area and at least partially transforms into a solid; Removing (160) the uncured carrier material (TM), in particular by means of a solvent, the remaining film of the carrier material (TM) forming the sensor element (SE) at the first end of the optical waveguide (LWL). Procedure according to Claim 2 , wherein the optical waveguide (LWL) provided - has an optical waveguide core (LWLC) at least at the first end of the optical waveguide (LWL) and / or - is coated at least at the first end of the optical waveguide with an opaque layer which has one or more translucent openings, the clearances , and wherein these structures of the optical waveguide (LWL), the optical waveguide core (LWLC) and / or the clearances, limit the light exit of the curing radiation with the curing wavelength λ _H at the first end of the optical waveguide to one or more exit areas and wherein the method in the carrier material (TM) during curing by feeding in the curing radiation with the curing wavelength λ _H at the second end (ELWL2) of the optical waveguide (LWL) - one or more optical functional elements (LWLL) and / or - one or more sensor elements (SE) at the first end (ELWL1) of the optical waveguide (LWL) in the area of the one or more exit regions and wherein the one or more optical functional elements (LWLL) formed by the method and / or the one or more sensor elements (SE ) can be set up by the method in such a way that the one or more optical functional elements (LWLL) formed by the method and/or the one or more sensor elements (SE) formed by the method - optically interact with the optical waveguide core (LWLC) at the first end (ELWL1) of the optical waveguide (LWL) and/or - with the one or more clearances at the first end (ELWL1) of the optical waveguide (LWL), in particular self-aligned by the method, - if optical radiation, in particular pump radiation (LB) with the pump radiation wavelength (λ _pmp ) is fed into the second end (ELWL2) of the optical waveguide (LWL) and/or - if NV centers are at the first end (ELWL1) of the optical waveguide (LWL) ( NVZ) within the carrier material (TM) and/or other paramagnetic centers within the carrier material (TM) emit fluorescent radiation (FL). Method for determining a physical quantity with the steps of providing an optical fiber (LWL). Claim 1 , feeding a pump radiation (LB) with the pump radiation wavelength (λ _pmp ) into the optical waveguide (LWL), in particular at the second end (ELWL2) of the optical waveguide (LWL), or irradiating the sensor element (SE) of the optical waveguide (LWL) with a pump radiation (LB) with the pump radiation wavelength (λ _pmp ); Detecting an intensity value of the fluorescence radiation (FL) of the NV centers (NVZ) of the sensor element (SE) and/or the other paramagnetic centers of the sensor element (SE) and determining at least one measured value for a physical quantity from this intensity value and possibly other values. Magnetic field camera with a sensor element layer (5) as a sensor element (SE), wherein the sensor element (SE) has a carrier material (TM) and wherein a large number of diamonds (DM) are embedded in the carrier material (TM) and wherein one or more or all diamonds (DM) of these diamonds (DM) have NV centers (NVZ) and/or other paramagnetic centers and wherein the NV centers (NVZ) of the sensor element (SE) and/or the other paramagnetic centers of the sensor element (SE) upon irradiation with Pump radiation (LB) emit at least one fluorescent radiation (FL), characterized in that the carrier material (TM) is a radiation-hardened carrier material (TM) and that the carrier material (TM) for radiation with a pump radiation wavelength (λ _pmp ) of the pump radiation (LB), with which the NV centers (NVZ) and/or the other paramagnetic centers are pumped, is essentially transparent and that the carrier material (TM) is suitable for radiation with a fluorescence wavelength (λ _fl ) of the fluorescence radiation (LB) of the NV centers (NVZ ) is essentially transparent and that the magnetic field camera has a fluorescence camera, in particular a light sensor array (1) and optics (7), for the spatially resolved recording of a fluorescence image of the fluorescence radiation (FL) of the NV centers (NVZ) and / or the other paramagnetic centers at least 2x2 pixels. Motor control for a motor, the motor and/or the control of the motor having an optical fiber Claim 1 comprises and/or wherein the motor is controlled by a magnetic field camera Claim 5 includes. Method for commutation of a motor Detecting the times of the zero crossings of the phase current of a motor phase of the motor using a method Claim 4 and/or detecting the times of the zero crossings of the magnitude of the magnetic flux density within the air gap (LS) of the motor using a method Claim 4 , wherein the sensor element (SE) is arranged in the air gap (LS) of the motor and / or in the stray field of the magnetic field in the air gap (LS) of the motor; Controlling the commutation of the phase voltages of the phase connections of the motor phase windings depending on the times of the zero crossings. Optical fiber production quantity, wherein the optical fiber production quantity comprises a plurality of optical fibers (LWL) and wherein the optical fiber (LWL) of the plurality of optical fibers (LWL) is provided with a sensor element (SE) and wherein the sensor element (SE) has a carrier material (TM) and wherein in the carrier material ( TM) a plurality of diamonds (DM) and / or crystals are embedded and one or more or all diamonds (DM) of these diamonds (DM) and / or one or more crystals of these crystals NV centers (NVZ) and / or have other paramagnetic centers and wherein the NV centers (NVZ) of the sensor element (SE) and / or the other paramagnetic centers of the sensor element (SE) upon irradiation with pump radiation (LB) of a pump radiation wavelength (λ _pmp ) of a predetermined pump radiation intensity via the optical waveguide ( LWL) at least one Fluores ence radiation (FL), characterized in that this optical waveguide production quantity of these optical waveguides (LWL) comprises 10 or more optical waveguides (LWL) and that the tolerance window of the intensity of the fluorescence radiation (FL) relevant here when irradiated with pump radiation (LB) has a pump radiation wavelength ( λ _pmp ) of a predetermined pump radiation intensity via the optical fiber (LWL) 10% of the mean value of the measured intensities of the fluorescence radiation (FL) of the various optical fibers of the optical fiber production quantity during the said irradiation of the sensor element (SE) with pump radiation (LB) of the pump radiation wavelength (λ _pmp ). predetermined pump radiation intensity, the irradiation being the irradiation for the measurement of the respective optical fiber (LWL) via the respective optical fiber (LWL), and that the C _pk value of these measured intensities of the fluorescent radiation (FL) of the different optical fibers (LWL) of the optical fiber production quantity during said irradiation of the sensor element (SE) with pump radiation (LB) of the pump radiation wavelength (λ _pmp ) of the predetermined pump radiation intensity based on the said relevant tolerance window, a Cpk value higher than C _pk =0.8 and / or higher than C _pk =1 .0 and/or higher than C _pk =1.2 and/or higher than C _pk =1.4 and/or higher than C _pk =1.66. Waveguide production quantity, the waveguide production quantity comprising several waveguides (1380, 1880, 2380, 6880, 6980) and each waveguide (1380, 1880, 2380, 6880, 6980) of the waveguides (1380, 1880, 2380, 6880, 6980) being equipped with a sensor element ( SE) and wherein the sensor element (SE) has a carrier material (TM) and wherein a plurality of diamonds (DM) and/or crystals are embedded in the carrier material (TM) and wherein one or more or all diamonds (DM) these diamonds (DM) and / or one or more crystals of this crystal have NV centers (NVZ) and / or other paramagnetic centers and wherein the NV centers (NVZ) of the sensor element (SE) and / or the other paramagnetic centers of the sensor element (SE) emit at least one fluorescence radiation (FL) upon irradiation with pump radiation (LB) of a pump radiation wavelength (λ _pmp ) of a predetermined pump radiation intensity, characterized in that this waveguide production quantity of these waveguides (1380, 1880, 2380, 6880, 6980) is 10 or more waveguides (1380, 1880, 2380, 6880, 6980) and that the tolerance window relevant here is the intensity of the fluorescence radiation (FL) of said irradiation with pump radiation (LB) of a pump radiation wavelength (λ _pmp ) of a predetermined pump radiation intensity via an optical waveguide (LWL) or over a light transmission distance that is the same for each waveguide, 10% of the mean value of the measured intensities of the fluorescence radiation (FL) of the various waveguides (1380, 1880, 2380, 6880, 6980) of the waveguide production quantity during the said irradiation of the sensor element (SE) with pump radiation (LB). Pump radiation wavelength (λ _pmp ) of the predetermined pump radiation intensity is, the irradiation for the measurement of the respective waveguide taking place via the optical waveguide (LWL) per waveguide or via the same light transmission path for each waveguide and that the C _pk value of these measured intensities of the fluorescence radiation ( FL) of the various waveguides of the waveguide production quantity during said irradiation of the sensor element (SE) with pump radiation (LB) of the pump radiation wavelength (λ _pmp ) of the predetermined pump radiation intensity based on the said relevant tolerance window a Cpk value higher than C _pk =0.8 and / or higher than C _pk =1.0 and/or higher than C _pk =1.2 and/or higher than C _pk =1.4 and/or higher than C _pk =1.66. Micro-integrated circuit which is a MOS or a CMOS or a BICMOS or a bipolar circuit on a, in particular semiconducting, carrier substrate (1360) and wherein the micro-integrated circuit has at least one optical waveguide (LWL1, LWL2). Claim 1 includes.

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