DE102013104086B3 - Electron beam evaporation assembly and method of electron beam evaporation - Google Patents

Abstract

According to various embodiments, an electron beam evaporation arrangement (100) is provided, comprising: a first electron beam source (102a), set up to provide a first electron beam (112a); a second electron beam source (102b) set up to provide a second electron beam (112b); a first receiving area (106a) for receiving a first material (118a); a second receiving area (106b) for receiving a second material (118b); a first deflection configuration (104a), set up to deflect the first electron beam (112a) onto the first receiving region (106a); a second deflection configuration (104b), set up to deflect the second electron beam (112b) onto the second receiving region (106b); and wherein the first deflection configuration (104a) and the second deflection configuration (104b) are magnetically coupled to one another.

Description

The invention relates to an electron beam evaporation arrangement and a method for electron beam evaporation.

By means of electron beam evaporation, substrates or carriers can be coated. If the vapor pressures of the substances or substance components to be vaporized are close to each other, for example, an alloy evaporation and / or doping evaporation can be carried out, for. B. a so-called single-pot evaporation of a multi-component Verdampfungsguts (the vaporized material can also be referred to as a target material).

Furthermore, a certain evaporation ratio of the components can be enforced by a so-called replenishment, wherein at least one material is added to the evaporating material in the evaporation process, or for example provided or tracked additional evaporation material, and usually such alloy evaporation and / or doping evaporation technically difficult to implement because this process may have too little long-term stability. Therefore, multi-pot evaporation (eg, two-pot evaporation) may be used, with each substance component being arranged in each case in an evaporation crucible, and wherein the evaporation crucibles may be individually adjusted in their spatial position. Due to a certain distance between the respective vapor sources, a concentration gradient (or a molar concentration gradient) may occur during the deposition of a material and / or during layer formation. This concentration gradient in the deposited layer can be made tolerable due to a corresponding evaporation geometry. Furthermore, the concentration gradient in the deposited layer may be desired, as can be used, for example, to form cermet layers.

The steam utilization efficiency in electron beam evaporation can be improved if the distance between the substrate and the vapor sources on the surface of the vaporization material is small. Therefore, a magnetic deflection configuration for generating a static magnetic field can be set up such that a corresponding guidance of an electron beam in the evaporation environment can be realized. Thus, a jet injection and a beam guidance of the electron beam between the vapor source and the substrate to be coated can take place, wherein the electron beam can remain away from the substrate and at the same time a steep angle of incidence on the surface of the vapor can be realized. This configuration can be used, for example, to coat a broad substrate, wherein the vapor sources can be generated transversely and symmetrically to the center of the substrate flow with a rapidly deflected electron beam.

For example, however, a disadvantage of this configuration may be that due to the Umlenkfeldstärkeverteilung in space usually only one electron gun can be used with which then the corresponding steam sources must be generated during the evaporation process. The deflecting field strength distribution in the space can unequally limit the area of incidence of the two materials in the areal extent that can be achieved by means of an electron gun, whereby the electron beam is directed to the corresponding locations of impingement by means of a beam deflection system (eg the beam deflecting system can be part of an electron beam source) can be. In other words, two appropriately arranged crucibles for evaporating two materials from an electron beam of an electron gun can not be achieved in the same way. For example, a single gun assembly may be unsuitable for large area coating with large coating widths to create two extended vapor source distributions on two crucibles so that it may be difficult to ensure high film thickness consistency and / or constant concentration over the entire width of a substrate.

In DE 22 04 467 A there is described a vapor deposition apparatus by means of which a metal can be vaporized from a crucible with one or more electron guns so that a carrier can be coated with the vaporized metal. In this case, the carrier to be coated can be transported through the crucible, wherein the crucible is almost completely closed.

Further, in DE 195 23 529 A1 (D2) describes a device for electron beam vapor deposition of wide substrates, wherein a plurality of electron beams are deflected onto a crucible by means of a homogeneous magnetic field, wherein the magnetic field extends parallel to the surface of the vapor in the crucible and the electron beams are injected in a predefined angular range to the magnetic field.

Further, in DE 10 2010 029 690 A1 (D3) a control and / or regulating device for a plurality of electron beam guns for irradiating material in a crucible, wherein the electron beam guns have a deflection system.

Further, in US 3,467,057 describes an electron beam evaporator, comprising means for generating a static electric field between an electron gun and an evaporating material, so that the electron beam can be directed to a material by means of an electrical voltage, wherein the electrical voltage is proportional to the acceleration voltage of the electron beam.

One aspect of various embodiments can be clearly seen in that an electron beam evaporation assembly may include a plurality of electron beam sources, wherein the electron beam evaporation assembly may have an improved steam utilization efficiency during operation.

For example, another aspect may be seen in that two different materials may be evaporated simultaneously by the electron beam evaporation assembly, where the two or more materials may reside in different containers (eg, in different evaporation crucibles), and yet. respective evaporation process parameters for the materials in the different containers can be set independently. These evaporation process parameters can include, for example: the power input into the respective material, the pattern (pattern) of the electron beam on the respective material surface, the distance of the respective material from a substrate to be coated, the angle of incidence of the electron beam on the respective material surface, the evaporation rate of the respective material, the power input of the electron beam, the spatial arrangement of diaphragms and the spatial arrangement of the respective containers of materials. Furthermore, the overall power input into the two materials can be improved since multiple electron beam sources can be used.

Further, one aspect of the various embodiments may be to provide an electron beam evaporation assembly so that a gradient layer can be made with high efficiency, for example, wherein the degree of material utilization in electron beam evaporation may be increased.

According to various embodiments, an electron beam evaporation arrangement may include: a first electron beam source configured to provide a first electron beam; a second electron beam source configured to provide a second electron beam; a first receiving area for receiving at least a first material; a second receiving area for receiving at least one second material; a first magnetic deflection configuration configured to redirect the first electron beam to the first receiving area; and a second magnetic deflection configuration configured to redirect the second electron beam to the second receiving area; wherein the first deflection configuration and the second deflection configuration may be magnetically coupled together.

According to various embodiments, the first deflection configuration and the second deflection configuration may be magnetically coupled to one another by means of a magnetic coupling configuration. Further, the magnetic coupling configuration may include an iron yoke or may consist of an iron yoke. Further, a magnetic coupling configuration may be a magnetic coupling structure or a magnetic coupling system.

According to various embodiments, the first electron beam source and the second electron beam source may comprise an electron beam gun. Furthermore, the first electron beam source or the second electron beam source may comprise an electron beam gun.

According to various embodiments, an electron beam gun may include a deflection system (deflection structure) for deflecting the electron beam. According to various embodiments, an electron beam gun may include an electron source and a deflection system for deflecting the generated electron beam. According to various embodiments, the direction of the electron beam (the emission direction of the electron beam from the electron source) may be deflected or changed by the deflection system in an angular range of about -60 ° to about + 60 °.

According to various embodiments, the first receiving area and the second receiving area may be arranged between the first electron beam source and the second electron beam source.

According to various embodiments, the first receiving area may comprise at least one first container for receiving the at least one first material; and / or the second receiving area may comprise at least one second container for receiving the at least one second material.

According to various embodiments, the at least one first material may be received in the first receiving area; and the at least one second material may be received in the second receiving area.

According to various embodiments, the at least one first material and the at least one second material may be different materials.

According to various embodiments, a receiving area may include a plurality of containers that may be used, for example, to hold a plurality of materials or other materials. Thus, for example, a simultaneous evaporation of more than two materials can be realized.

According to various embodiments, the first receiving area may be located closer to the first electron beam source than the second receiving area; and the second receiving area may be located closer to the second electron beam source than the first receiving area.

According to various embodiments, the first magnetic deflection configuration or the second magnetic deflection configuration may comprise a magnet arrangement and / or a coil arrangement.

According to various embodiments, the first magnetic deflection configuration and the second magnetic deflection configuration may comprise a magnet arrangement and / or a coil arrangement.

According to various embodiments, the first magnetic deflection configuration may comprise a first magnet and / or a first coil; and the second magnetic deflection configuration may include a second magnet and / or a second coil.

According to various embodiments, the first magnetic deflection configuration and the second magnetic deflection configuration may each comprise two coils.

According to various embodiments, the magnet arrangement and / or the coil arrangement can be configured such that a first magnetic field deflecting the first electron beam and a second magnetic field deflecting the second electron beam are oriented opposite to one another.

According to various embodiments, the first deflection configuration and the second deflection configuration may be magnetically coupled together by means of at least one yoke.

According to various embodiments, a coating system may include: a vacuum chamber; and an electron beam evaporation device disposed in the vacuum chamber, as described herein, for depositing a gradient layer on a substrate in a coating region (or coating zone) of the vacuum chamber.

According to various embodiments, a gradient layer may be a layer having a material gradient along a direction of the layer, for example along a lateral direction or along a thickness direction (along the thickness) of the layer.

According to various embodiments, the coating area may be an area within a vacuum chamber in which the evaporation of the vapor takes place. According to various embodiments, a coating region may consist of at least one of the following ranges or have one of the following ranges: an evaporation region, for example near the vapor source or near the crucible surface in which a material used for coating can be evaporated, a deposition region, for example near the surface a substrate to be coated, in which the evaporated material in the evaporation region can be deposited on the substrate to be coated, and / or a steam propagation region, for example between the crucible (or the vapor source) and the substrate to be coated, in which the vaporized material propagates , According to various embodiments, the coating system may be configured such that the coating region or the deposition region is close to the surface of the substrate to be coated or adjacent to the substrate to be coated.

According to various embodiments, the coating installation may further comprise a transport device for transporting a substrate through the coating area.

According to various embodiments, the electron beam evaporation arrangement may be disposed at least partially below the coating area.

According to various embodiments, the complete electron beam evaporation arrangement may be arranged below a deposition region.

According to various embodiments, the coating installation can be set up in such a way that the coating area at least partially lies between the area of the surface to be coated Substrates and the electron beam evaporation assembly is located.

According to various embodiments, a method for depositing a layer on a substrate may include: redirecting a first electron beam by means of a first magnetic deflection configuration onto a first receiving area, in which at least a first material may be accommodated, such that a portion of the at least one first material can be evaporated; deflecting a second electron beam by means of a second magnetic deflection configuration onto a second receiving region, in which at least one second material can be accommodated, so that a part of the at least one second material can be vaporized; depositing the at least one first material and the at least one second material on the substrate; wherein the first magnetic deflection configuration and the second magnetic deflection configuration may be magnetically coupled together.

Further, the method of depositing a layer on a substrate may include transporting the substrate through a coating area of a vacuum chamber.

According to various embodiments, the coating plant may be an inline plant. Furthermore, the coating installation can have a transport device for transporting a strip-shaped substrate.

According to various embodiments, the substrate may be moved uniformly or uniformly straight through the coating area.

According to various embodiments, during the process of depositing a layer on a substrate, the at least one first material and the at least one second material having a material gradient may be deposited on the substrate.

According to various embodiments, a material of the at least one first material and the at least one second material may comprise aluminum and another material of the at least one first material and the at least one second material may comprise silicon.

According to various embodiments, a first material and a second material having a material gradient may be deposited on a substrate.

Furthermore, the first material and the second material may be deposited on the substrate, wherein the deposited material on the substrate may have a spatially inhomogeneous distribution of the first material and the second material.

Further, the first material and the second material may be deposited on the substrate, wherein the deposited material may form a gradient layer on the substrate.

According to various embodiments, the first material and the second material may be deposited on the substrate such that a layer forms on the substrate, wherein the layer may have a material gradient.

According to various embodiments, the method for electron beam evaporation may further comprise generating the first electron beam by means of a first electron beam source and generating the second electron beam by means of a second electron beam source.

In accordance with various embodiments, a method of electron beam evaporation may further comprise utilizing or activating an electron beam evaporation arrangement described herein.

According to various embodiments, deposition of the at least one first material and the at least one second material may be on a tape substrate or an endless substrate.

According to various embodiments, an electron beam evaporation arrangement may be provided, such that by means of a magnetic deflection field two electron beams, which are generated by two electron guns, generate one or more vapor sources on two different pots. In this configuration, for example, alloy evaporation and / or doping evaporation may be performed as gradient evaporation. In this case, for example, a low sputtering distance and thus a high degree of steam utilization can be realized. Furthermore, for example, a large coating width, a high layer thickness homogeneity and / or a high concentration homogeneity can be realized.

According to various embodiments, the vaporization of the individual components from their respective vaporization crucibles may be accomplished by the use of two independent electron beam devices (eg, each comprising an electron beam source, a deflection system, and / or a deflection configuration) such that, for example, control is independent of each other and / or regulating the electron beam devices, the evaporation process parameters can be easily adapted to a desired combination process.

According to various embodiments, the electron beam evaporation arrangement may be arranged in a planar substrate coating system, e.g. For example, for coating a wafer backside metallization, or, for example, for coating a wafer backside with an Al / Si alloy as the material gradient layer.

According to various embodiments, the method of electron beam evaporation may be used for coating planar substrates, e.g. For example, for producing a wafer backside metallization, or, for example, for coating a wafer backside with an Al / Si alloy as the material gradient layer.

Embodiments of the invention are illustrated in the figures and are explained in more detail below.

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1A a schematic perspective view of an electron beam evaporation assembly, according to various embodiments;

1B to 1F each a schematic cross-sectional view of an electron beam evaporation assembly, according to various embodiments;

2A a schematic plan view of an electron beam evaporation assembly, according to various embodiments;

2 B a schematic cross-sectional view of an electron beam evaporation assembly, according to various embodiments;

3A and 3B an exemplary arrangement of vapor sources on the surface of the vapor, according to various embodiments; and

4 a schematic flow diagram of a method for electron beam evaporation, according to various embodiments.

In the following detailed description, reference is made to the accompanying drawings, which form a part hereof, and in which is shown by way of illustration specific embodiments in which the invention may be practiced. In this regard, directional terminology such as "top", "bottom", "front", "back", "front", "rear", etc. is used with reference to the orientation of the described figure (s). Because components of embodiments can be positioned in a number of different orientations, the directional terminology is illustrative and is in no way limiting. It should be understood that other embodiments may be utilized and structural or logical changes may be made without departing from the scope of the present invention. It should be understood that the features of the various exemplary embodiments described herein may be combined with each other unless specifically stated otherwise. The following detailed description is therefore not to be taken in a limiting sense, and the scope of the present invention is defined by the appended claims.

As used herein, the terms "connected," "connected," and "coupled" are used to describe both direct and indirect connection, direct or indirect connection, and direct or indirect coupling. In the figures, identical or similar elements are provided with identical reference numerals, as appropriate.

1A schematically shows an electron beam evaporation arrangement 100 in accordance with various embodiments, wherein the electron beam evaporation assembly 100 The following may comprise: a first electron beam source 102 configured to provide a first electron beam; a second electron beam source 102b configured to provide a second electron beam; a first recording area 106a for picking up a first material; a second recording area 106b for picking up a second material; a first deflection configuration 104a arranged for deflecting the first electron beam to the first receiving area 106a ; a second deflection configuration 104b arranged for deflecting the second electron beam to the second receiving area 106b ,

The deflection configuration can also be referred to and / or understood, for example, as a deflection structure or as a deflection system.

Furthermore, the first deflection configuration 104a and the second deflection configuration 104b be magnetically coupled with each other, as in 2A is shown in more detail. Such a magnetic coupling can be realized for example by means of an iron core or an iron yoke, or for example by means of another ferromagnetic material.

As in 1A is shown, the first receiving area 106a corresponding to the first electron beam source 102 be assigned, for example by the electron beam of the first electron beam source 102 by means of the first deflection configuration 104a in the first recording area 106a is diverted. Accordingly, the second recording area 106b the second electron beam source 102b be assigned, for example by the electron beam of the second electron beam source 102b by means of the second deflection configuration 104b in the second recording area 106b is diverted.

The electron beam, for example by means of the electron beam source 102 . 102b is generated, may be in the direction of the receiving area 106a . 106b spread. Furthermore, the electron beam can be deflected by means of a magnetic field, the magnetic field corresponding to the first deflection configuration 104a and the second deflection configuration 104b can be generated. According to various embodiments, the first deflection configuration 104a and the second deflection configuration 104b each have two Umlenkkonfigurationselemente, as in 1A is illustrated, wherein the two Umlenkkonfigurationselemente each on opposite sides of the corresponding receiving area 106a . 106b can be arranged. For example, thus, a first magnetic field above or in the vicinity of the first receiving area 106a and a second magnetic field above or near the second receiving area 106b be generated. According to various embodiments, the deflection configurations 104a . 104b be constructed of permanent magnets or coils or permanent magnets or coils, so that a static or dynamic magnetic field can be generated. Furthermore, the Umlenkkonfigurationselemente described each have a magnet or a coil. Furthermore, the described Umlenkkonfigurationselemente and / or the Umlenkkonfigurationen 104a . 104b be connected by means of a magnetic conductor.

In a possible geometric configuration, the first recording area 106a closer to the first electron beam source 102 be arranged as the second receiving area 106b and analogously, the second recording area 106b closer to the second electron beam source 102b is arranged as the first receiving area 106a , In other words, the shooting areas 106a . 106b between the electron beam sources 102 . 102b be arranged. Furthermore, the recording areas 106a . 106b be arranged side by side.

Other possible configurations, similar to those in 1A shown electron beam evaporation arrangement 100 , For example, may have more than two electron beam sources and / or, for example, more than two receiving areas. Furthermore, the arrangement of the electron beam sources 102 . 102b deviate from the illustrated arrangement, for example, the electron beam sources 102 . 102b not necessarily located directly opposite one another as described herein, but for example have a deviation from the illustrated configuration. In this regard, the deflection configuration 104a . 104b be set up accordingly, to redirect the respective incident electron beam, from a corresponding direction, in which associated receiving area.

1B shows a cross-sectional view, or a side view, of a part of the electron beam evaporation assembly 100 , The electron beam source 102 . 102b for example, above the recording area 106a . 106b be arranged (as by means of the distance 105a along the direction 105 is illustrated), so that the electron beam 112a . 102b which is from the electron beam source 102 . 102b is generated, is substantially deflected so that electron beam 112a . 102b the respective recording area 106a . 106b reached. Depending on the orientation of the magnetic field, the electron beam can theoretically be deflected upwards or downwards (for example, the deflection of the electron beam parallel to the direction 105 take place), wherein the change of direction can be due to the acting Lorentz force. Thus, for example, the following properties may be the corresponding configuration of the electron beam evaporation arrangement 100 influence: the velocity of the electrons (thus, for example, the used acceleration voltage for the electrons in the electron source), the strength and the spatial distribution of the magnetic field, the angle at which the electron beam arrives in the corresponding magnetic field, and the relative spatial arrangement of the electron beam source 102 . 102b , the deflection configuration 104a . 104b and the reception area 106a . 106b to each other, the proviso may consist in the electron beam 112a . 112b in the desired manner in the receiving area 106a . 106b to steer.

As in 1C is shown in a schematic cross-sectional view, that of the first electron source 102 generated first electron beam 112a by means of the first magnetic field 110a , generated by means of the first deflection configuration 104a , on a first container 108a be steered or steered. According to various embodiments, the first container 108a within the first recording area 106a be arranged. The first container 108a For example, an evaporation crucible 108a which is a first Evaporate, or a first material to be evaporated, record or may include. In an analogous manner, the second electron beam 112b generated by the second electron source 102b , by means of the second magnetic field 110b , generated by means of the second deflection configuration 104b on a second container 108b be steered or steered. According to various embodiments, the second container 108b in the second receiving area 106b be arranged. The second container 108b For example, it may be an evaporation crucible which can hold a second vaporization material or a second material to be vaporized.

The container 108a . 108b For example, it may also be a target for electron beam evaporation or have a target for electron beam evaporation.

As in 1C is shown according to the common physical notation, the first magnetic field 110a into the drawing plane and analogously the second magnetic field 110b pointing out of the drawing plane. In this case, the direction of the respective magnetic fields 110a . 110b be set up accordingly, so that the electron beams 112a . 112b be deflected in the desired manner.

As in 1D is shown, the containers 108a . 108b be arranged so that they have a different height position. For example, the containers 108a . 108b a different distance from the corresponding electron beam source 102 . 102b have measured along the direction 105 , Such a configuration can be used, for example, if the respective distance of the container 108a . 108b should be varied from a substrate to be coated or should be variably arranged, see also 1E ,

In the configuration, as in 1D is shown, the corresponding magnetic fields 110a . 110b be set up such that, for example, the first electron beam 112a correspondingly in a favorable manner to the first container 108a is steered or steered, and that the second electron beam 112b correspondingly in a favorable manner to the second container 108b is steered or steered.

According to various embodiments, the magnetic fields 110a . 110b be adjusted independently, configured, controlled, regulated or optimized. According to various embodiments, the magnetic fields 110a . 110b independently according to each other by means of the coils of the deflection configuration 104a . 104b independently set, configured, controlled, regulated or optimized. According to various embodiments, the magnetic fields 110a . 110b be independently configured or set.

According to various embodiments, the containers 108a . 108b movable ( 101 . 103a . 105a ) within the electron beam evaporation assembly 100 be attached so that, for example, the position of the container 108a . 108b can be adjusted. Positioning the containers 108a . 108b can be done for example by means of motors or stepper motors, which the container 108a . 108b can be brought into a desired position by means of a suitable positioning system. For example, because the containers may be positioned independently or may be positioned, it may be necessary for the respective magnetic fields to be positioned 110a . 110b by means of the respective deflection configurations 104a . 104b can also be configured independently of each other or can be set up independently.

The positioning 101 . 103a . 105a the container 108a . 108b according to the directions 101 . 103 . 105 For example, can be done statically, so that the container 108a . 108b within the electron beam evaporation arrangement 100 may have a fixed but well-defined position, the corresponding magnetic field 110a . 110b may also be static.

The positioning 101 . 103a . 105a the container 108a . 108b according to the directions 101 . 103 . 105 can be done, for example, dynamically, so that the container 108a . 108b within the electron beam evaporation arrangement 100 their respective position can change, with the corresponding magnetic field 110a . 110b can also be dynamically configured (controlled, regulated), so that the magnetic field 110a . 110b to the respective position 101 . 103a . 105a the container 108a . 108b can be adjusted.

According to various embodiments, thus, the magnetic field 110a . 110b to the respective position of the respective container 108a . 108b be adjusted.

According to various embodiments, adjusting the magnetic field 110a . 110b by means of the coils of the deflection configuration 104a . 104b be done, whereby the strength of the magnetic field can be influenced by how much current through the respective coils of the deflection configuration 104a . 104b flows. According to various embodiments, the deflection configurations 104a . 104b For example, have a plurality of coils, each of these coils independently controlled or controlled can be or according to the desired magnetic field to be generated 110a . 110b can be set up.

According to various embodiments, the electron beam evaporation arrangement 100 be arranged such that the electron beam is incident perpendicular to a target material, so that the target material can be evaporated by means of the electron beam.

As in 1E is shown, the container can 108a (The same applies analogously to the container 108b ) a first target material 118a have or include. According to various embodiments, the container 108a an evaporation crucible 108a be, for example, cooled or uncooled, and the target material 118a may be a material to be vaporized or have a material to be evaporated. When evaporating the material 118a by means of the electron beam 112a can evaporate due to the energy input of the electron beam 112a in the material to be evaporated 118a respectively. The energy input of the electron beam 112a for example, may be maximum when the electron beam 112a perpendicular (where the angle 107 may be in an angular range of about 90 °) on the surface 107a of the material to be evaporated 118a meets. In order to achieve an optimum efficiency for the electron beam evaporation, so for example the angle 107 perpendicular to the surface 107a of the material to be evaporated 118a can set up both the magnetic field 110a as well as the geometry of the electron beam evaporation arrangement 100 be adjusted or adjusted accordingly.

Further, as in 1E is shown, the evaporated material can be 120a perpendicular to the surface 107a of the material to be evaporated 118a (ie perpendicular to the target surface 107a spread). According to various embodiments, the vaporized material 120a along the direction 105 spread, leaving the evaporated material 120a can deposit on a substrate, which in one area 122a may be arranged so that the vaporized material 120a can impinge on the substrate while the evaporated material 120a for example, substantially along the direction 105 spreads. According to various embodiments, the vaporized material 120a a separation area 122a and / or a steam spreading area 120a define.

Analogous to the schematic representation in FIG 1E can the electron beam evaporation arrangement 100 be set up such that the respective electron beam 112a . 112b on the surface 107a . 107b of the material to be evaporated 118a . 118b meets, with the angle 107 between the surface 107a . 107b of the material to be evaporated 118a . 118b and the respective incident electron beam 112a . 112b is essentially rectangular, as in 1F is shown. Because the electron beams 112a . 112b , which on the respective surfaces 107a . 107b the materials to be evaporated 118a . 118b can be independently configured as described herein, the efficiency of electron beam evaporation for both materials to be vaporized 118a . 118b be optimal at the same time or optimized at the same time. Furthermore, the power, thus the corresponding entry of thermal energy in the target material 118a . 118b , for both electron beam sources 102 . 102b be chosen independently of each other, so that the process conditions for the evaporation of the respective target material 118a . 118b can be optimal at the same time or can be optimized. For example, the different materials to be evaporated 118a . 118b in the containers 108a . 108b have different evaporation energies and thus it may be necessary, for example, that the power of the respective electron beam 102 . 102b which contains the corresponding target material 118a . 118b evaporated, to be adjusted.

According to various embodiments, an aperture 114 between the two areas 114a . 114b be arranged. Furthermore, the aperture 114 For example, the deposition of the evaporated target material 120a . 120b influence. The aperture 114 may, for example, the spreading of the respective evaporated material 120a . 120b confine to a certain area of the substrate. According to various embodiments, the position, shape and size of the bezel may be adjusted or adjusted so as to enable or enhance the deposition of layers having a material gradient on a substrate.

According to various embodiments, using a bezel 114 Restrict access to the target material, so that it may be necessary, the first target material 118a in the first area 114a with the first electron beam source 102 to evaporate, and the second target material 118b in the second area 114b corresponding to the second electron beam source 102b to evaporate.

According to various embodiments, the first area 114a symmetrical to the second area 114b be constructed.

Furthermore, the magnetic fields 110a . 110b be directed opposite to each other.

The 2A and 2 B show an electron beam evaporation arrangement 100 According to various embodiments, in a more detailed schematic view, as a plan view in FIG 2A and as a side view or cross-sectional view in FIG 2 B ,

In 2A is analogous to the previous description, an electron beam evaporation arrangement 100 shown, wherein the electron beam evaporation arrangement 100 The following may comprise: a first electron beam source 102 and a second electron beam source 102b , wherein the electron beam sources 102 . 102b each a deflection system 202a . 202b can have; a first container 108a , which is a first material to be evaporated 118a may have, and a second container 108b which is a second material to be evaporated 118b can have; a first electron beam 112a , which by means of the first electron beam source 102 can be generated and by means of the first deflection system 202a in the direction of the first material to be evaporated 118a can be deflected, and a second electron beam 112b , which by means of the second electron beam source 102b can be generated and by means of the second deflection system 202b in the direction of the second material to be evaporated 118b can be distracted; a first deflection configuration 104a which can generate at least a first magnetic field region, so that the first electron beam 112a due to the first magnetic field region on the surface of the first material to be evaporated 118a is deflected, and a second deflection configuration 104b which can generate at least a second magnetic field region, so that the second electron beam 112b due to the second magnetic field area on the surface of the second material to be evaporated 118b is deflected, with the first deflection configuration 104a and the second deflection configuration 104b on one side by means of a magnetic conductor 206 can be magnetically coupled.

According to various embodiments, the deflection system 202a . 202b an electric deflection system, for example based on electrically charged plates, so that the electron beam can be deflected by means of electrostatic forces.

According to other embodiments, the deflection system 202a . 202b a magnetic deflection system, for example based on magnetic fields, so that the electron beam can be deflected by means of electromagnetic forces.

Furthermore, the deflection system 202a . 202b also be an electromagnetic deflection system or have an electromagnetic deflection device.

According to various embodiments, the deflection configuration 104a . 104b , as in 2A is shown having at least four coils, so that above the surface of the material to be evaporated, a first and second magnetic field region can be generated. According to various embodiments, the deflection configurations 104a . 104b be connected to a control system or control system, so that the correspondingly generated magnetic field to the configuration of the components in the electron beam evaporation assembly 100 can be adjusted. Furthermore, the deflection configurations 104a . 104b in their spatial arrangement to the positions of the container 108a . 108b be adapted, or the deflection configurations 104a . 104b may comprise a positioning system (not shown), so that the spatial arrangement of the Umlenkkonfigurationen 104a . 104b to the positions of the containers 108a . 108b can be adjusted. In this regard, the positions may be arranged such that the relative distance between the respective container 108a . 108b and the associated deflection configuration 104a . 104b can be the same. In other words, for example, a height difference of the targets 118a . 118b in the positioning of the deflection configurations 104a . 104b be considered or taken into account.

According to various embodiments, by means of the strength of the deflecting configuration 104a . 104b Magnetic fields generated the impact point of the electron beam 112a . 112b on the surface of the material to be evaporated 118a . 118b changed, adjusted or adjusted. For example, the impact point of the electron beam can be 112a . 112b on the surface of the material to be evaporated 118a . 118b parallel to the direction 101 be moved.

Furthermore, the impact point of the electron beam 112a . 112b on the surface of the material to be evaporated 118a . 118b by means of the deflection system 202a . 202b changed, adjusted or adjusted. For example, the impact point of the electron beam can be 112a . 112b on the surface of the material to be evaporated 118a . 118b parallel to the direction 101 and / or parallel to the direction 103 be moved.

According to various embodiments, the deflection system 202a . 202b the electron beam 112a . 112b in a certain pattern over the surface of the material to be evaporated 118a . 118b to lead. Furthermore, the deflection can vary rapidly over time, so that, for example, the electron beam 112a . 112b various Areas of the surface of the material to be evaporated 118a . 118b heated and evaporated while material in these areas. In other words, the electron beam 112a . 112b by means of the deflection system 202a . 202b in desired areas on the surface of the material to be evaporated 118a . 118b create a vapor source or multiple vapor sources. In this case, the number and / or the respective shape of the vapor sources can be adapted or adapted to the respective coating process. For example, along the direction 103 on each of the surface of the material to be evaporated 118a . 118b a plurality of vapor sources are generated, so that, for example, a homogeneous coating of a substrate across the entire width is made possible (the width of the substrate extends, for example, in the direction of 103 where the substrate is above the containers 108a . 108b can be guided along, as in 2 B is illustrated).

In this context, as described herein, for example, the deflection configuration 104a . 104b serve the electron beam 212a . 212b redirect so that the electron beam 212a . 212b each at a favorable angle 107 on the surface of the material to be evaporated 118a . 118b impinges, z. At an angle in a range of about 90 ° to about 55 °, e.g. In a range of about 90 ° to about 70 °, e.g. In a range of about 90 ° to about 85 °, e.g. B. in a range of about 90 °. In this case, due to the interaction of the electron beam with the material to be evaporated 118a . 118b an angle of about 90 ° for the coating process or for the evaporation of the target material 118a . 118b be most efficient. As already described, while the first electron beam 112a and the second electron beam 112b be set, set up, adjusted and / or optimized independently of each other.

According to various embodiments, the electron beam evaporation arrangement 100 be set up such that the first electron beam 112a not on the second material to be evaporated 118b is steered and that the second electron beam 112b not on the first material to be evaporated 118a is steered. Thus, for example, a more efficient and independent generation of the vapor sources on the respective surface of the materials to be evaporated can be made possible.

According to various embodiments, the electron beam evaporation arrangement 100 be arranged such that the containers are mounted at a different height or are at a different height, wherein the respective electron beams 112a . 112b the materials to be evaporated accordingly 118a . 118b in the containers 108a . 108b can evaporate optimally.

According to various embodiments, the first deflection configuration 104a and the second deflection configuration 104b be magnetically coupled by means of a yoke, for example by means of an iron yoke.

According to various embodiments, the positions of the containers 108a . 108b be changed in a range of about several millimeters to about 1 m, for example by means of a positioning system.

As in 2 B can be shown, due to the Umlenkkonfigurationen 104a . 104b the electron beams 112a . 112b be arranged laterally, so that the distance between the evaporating material 118a . 118b and a substrate 220 can be reduced or chosen low enough. Thus, for example, the yield of the evaporation process (the ratio of vaporized material to material deposited or deposited on the substrate) can be increased.

According to various embodiments, the electron beam evaporation arrangement 100 be located within a vacuum process chamber or used within a vacuum process chamber (not shown).

Due to the described configuration of the electron beam evaporation arrangement 100 This can be arranged within a coating system or used. According to various embodiments, by means of the electron beam evaporation arrangement 100 a layer on a substrate 220 are deposited, wherein the layer may have a material gradient. Furthermore, the coating installation can have at least one transport device 222 for transporting a substrate 220 exhibit. For example, the substrate 220 above the electron beam evaporation arrangement 100 by means of the transport device 222 be transported, wherein the surface to be coated of the substrate 220 in the direction of the electron beam evaporation arrangement 100 can show.

Furthermore, the substrate 220 at least partially above the electron beam evaporation assembly 100 by means of the transport device 222 be transported, wherein the surface to be coated of the substrate 220 in the direction of the electron beam evaporation arrangement 100 can show.

According to various embodiments, the containers 108a . 108b along the direction 101 be moved, for example, oscillating 224 , This can, for example, cause the material to be evaporated 118a . 118b can be evaporated more homogeneously.

According to various embodiments, the arrangement of the components (electron beam sources, containers, deflection configurations) of the electron beam evaporation arrangement described herein 100 can be varied in a variety of parameters and positions, wherein substantially the two electron beams can be directed independently of each other on the respective surface of the material to be evaporated, whereby the correspondingly described advantages or effects can result.

According to various embodiments, the deflection configurations 104a . 104b generate a magnetic deflection field, wherein the magnetic deflection field may have a Nutzfeldbereich, so that the electron beams 112a . 112b by means of the payload area on the surface of the respective vaporization 118a . 118b can be steered. According to various embodiments, the magnetic flux density in the payload area may range from about 0.1 mT to about 1T.

According to various embodiments, the electron beams 112a . 112b by means of Umlenkmagnetfelder down in the direction of the evaporation crucible 108a . 108b be redirected.

According to various embodiments, the electron beam or may be the electron beams 112a . 112b Having electrons accelerated at an acceleration voltage of about 30 kV to about 60 kV. The electron beam source 102 . 102b , also referred to as an electron gun, may have a power ranging from about 10 kW to about 300 kW.

According to various embodiments, the container or containers may be 108a . 108b have a length in a range of about a few centimeters to about 2 m, e.g. In a range of about 1 m to about 2 m, e.g. B. a length in a range of about 1.5 m. Furthermore, the container or can the container 108a . 108b have a width of about 0.1 m to about 1 m, z. In a range of about 0.5 m to about 1 m, e.g. B. a width in a range of about 70 cm. Furthermore, the container or can the container 108a . 108b have a depth of about 5 cm to about 30 m, z. B. a depth in a range of about 15 cm to about 20 cm.

According to various embodiments, the container or containers may be 108a . 108b (or the crucible or the evaporation crucible) be water cooled. Furthermore, the container or can the container 108a . 108b (or the crucible or the evaporation crucible) copper or consist of copper. Furthermore, the container or can the container 108a . 108b (or the crucible or the evaporation crucible) graphite or consist of graphite. According to various embodiments, the vaporization crucible 108a . 108b a so-called cold crucible or a so-called hot pot.

According to various embodiments, the target or targets (eg, the containers 108a . 108b and the evaporation material 118a . 118b ) have a round shape or, for example, another shape, such as a polygon shape.

According to various embodiments, the electron beams 112a . 112b by means of the respective deflection system 202a . 202b and / or by means of the respective deflection configuration 104a . 104b be controlled or regulated.

According to various embodiments, the evaporation crucibles 108a . 108b be varied in the height position, so that, for example, the distance 205 between the evaporation pans 108a . 108b and the substrate 220 can be changed (see eg 2 B ).

According to various embodiments, the electron beam evaporation arrangement 100 be set up such that by means of the electron beam evaporation arrangement 100 at least one of the following materials may be deposited on a suitable substrate: a metal alloy, a cermet layer, an Al / Si alloy (eg, for backside contacts of a solar cell), a gradient layer, a molybdenum oxide gradient layer, a niobium oxide gradient layer, Tantalum carbide and tungsten carbide. Accordingly, the material to be evaporated 118a . 118b For example, metal oxide, alumina, zirconia, a metallic compound, a metal, niobium, molybdenum, titanium, cobalt, zirconium, chromium, tantalum, tungsten, graphite, a carbon compound, an oxygen compound and a nitrogen compound.

According to various embodiments, the first material to be evaporated 118a a ceramic material or a ceramic and the second material to be evaporated 118b one be metallic material or a metal. According to various embodiments, the first material to be evaporated 118a a ceramic material or a ceramic; and the second material to be evaporated 118b may comprise a metallic material or a metal.

According to various embodiments, by simultaneously depositing the first and second target materials on the substrate surface during evaporation, a layer may be formed, wherein the layer may have a material gradient. In other words, the layer formed on the substrate may have different chemical compositions in different layer areas. Furthermore, the first target material 118a deposited in a first substrate region and the second target material 118b in a second substrate region, the substrate being parallel to the direction during deposition 101 is moved.

According to various embodiments, the yoke 206 be optional and / or be replaced by another magnetic conductor, wherein the yoke 206 may consist of a ferromagnetic material or may comprise a ferromagnetic material. Furthermore, the deflection configuration 104a . 104b having a ferromagnetic material.

According to various embodiments, the electron beam 112a . 112b means of the deflection system 202a . 202b Pointwise encounter the target material and thus generate vapor sources, for example in a predefined pattern.

As in 3A and 3B is shown, the electron beam 112a . 112b by means of the deflection system 202a . 202b the electron beam source 102 . 102b (with the help of the deflection configuration) on the surface of the target (of the evaporation material 118a . 118b ) are steered. The vapor sources thus generated may have any shape, for example, the vapor source may be linear 302c be round or circular 302a be oval or oblong 302b be, and / or the steam source may be in any desired shape 302d be provided or provided.

4 shows a schematic flow diagram of a method for electron beam evaporation. According to various embodiments, a method for depositing a layer on a substrate may comprise: in S410, redirecting a first electron beam by means of a first magnetic deflection configuration onto a first receiving area in which at least a first material may be accommodated so that a part of the at least one a first material can be evaporated; (eg, simultaneously) in S420, redirecting a second electron beam by a second magnetic deflection configuration to a second receiving area in which at least a second material may be accommodated such that a portion of the at least one second material may be vaporized; and in S430, depositing the at least one first material and the at least one second material on the substrate; wherein the first deflection configuration and the second deflection configuration may be magnetically coupled together.

In accordance with various embodiments, redirecting a first electron beam and redirecting a second electron beam may simultaneously redirect two electron beams from each of two electron beam sources.

According to various embodiments, in a coating system for producing a material gradient, the distance 205 between the substrate to be coated 220 and the surface of the respective Verdampfungsguts 108a . 108b due to the electron beam evaporation arrangement described herein 100 be chosen low (cf. 2 B ). According to various embodiments, the distance 205 are in a range of about 0.2 m to about 2 m, e.g. In a range of about 0.4 m to about 1.5 m, e.g. In a range of about 0.5 m to about 1.2 m.

According to various embodiments, the distance 205 between the substrate 220 and the corresponding vapor sources on the surface of the targets 118a . 118b affect the layer growth on the substrate. For example, a shorter distance 205 cause the growing layer on the substrate 220 may have a higher density and / or a larger grain size. Furthermore, other properties of the layer deposited on the substrate may also change, such as the chemical composition or the surface roughness.

Further, a smaller pitch may cause the growth rate of the film deposited on the substrate to be increased, thereby also reducing the process cost, for example.

According to various embodiments, the components of the electron beam evaporation arrangement 100 be fixed, for example, the container 108a . 108b and the deflection configurations 104a . 104b (or diaphragms) are arranged statically (for example, adapted to the respective coating process). According to In other embodiments, the components of the electron beam evaporation arrangement 100 be arranged movable (eg positionable), for example, the container 108a . 108b and the deflection configurations 104a . 104b (Or aperture) be positioned positioned, the positions can be adapted, for example, dynamically during coating to the respective coating process.

According to various embodiments, a diaphragm may be disposed between the two vaporization crucibles so that the deposition of the vaporized material on the substrate may be affected. Furthermore, the use of a diaphragm may favor the formation of a gradient layer, for example by partially shading the substrate by means of the diaphragm, so that the area on the substrate on which the respective vaporized material can impinge can correspondingly be restricted.

According to various embodiments, the material to be vaporized may also be referred to herein as evaporative material. Further, the container may also be referred to herein as an evaporation crucible. For example, the electron beam source may be an electron gun, with generally accelerated electrons leaving the electron beam source as an electron beam. Furthermore, the electron beam source can have at least one deflection system, so that the electron beam can leave the electron beam source at a certain angle, along a predefined direction.

According to various embodiments, the magnetic field generated by each of the deflection configuration may be inhomogeneous such that, for example, only a portion of the generated magnetic field (or a portion of the generated magnetic field) may be capable of redirecting the electron beam. In other words, the respective magnetic field can have a useful field region, wherein only this useful field region of the magnetic field is set up such that the electron beam is correspondingly deflected.

According to various embodiments, the magnetic field, which is generated in each case by the deflection configuration, can be generated by means of one or more coils, wherein the magnetic field of the coil is controlled or regulated by means of an electric current or is set up. Accordingly, by means of the regulation or the control of the electrical current, the desired magnetic field can be generated, wherein the magnetic field may depend, for example, on at least one of the following parameters: the current intensity and the time dependence of the electrical current flowing through the respective coil, the coil geometry , The arrangement of the coils relative to each other and / or, for example, from the magnetic coupling of the coils with each other.

According to various embodiments, as described herein, an electron-beam double-pot evaporation arrangement may be provided with a beam guide, so that, for example, alloy evaporation or doping evaporation may be advantageously made possible as gradient evaporation.

According to various embodiments, during an electron beam evaporation or electron beam evaporation process, the vaporization of the individual components from their respective containers can be controlled or regulated independently by the use of at least two independent electron beam devices, so that the evaporation of the individual components to the desired evaporation process is best possible simple way to be customized.

According to various embodiments, a magnetic deflection system may consist of four deflection coils, see 2A so that an electron beam shot configuration is made possible for two opposing electron beam guns. For example, the magnetic deflection system may generate a four-pole magnetic field arrangement, wherein the first opposing magnetic poles produce a first field region that can cause the deflection of the first electron beam onto the first container (crucible) and the second opposing magnetic poles can generate a second field region the deflection of the second electron beam on the second container (crucible) can cause. For example, to reduce backscattering stray fields, the coil poles of adjacent coils may be magnetically interconnected or shorted together by means of a magnetic material (eg, by means of a magnetic yoke), for example by means of an iron yoke which can connect the coil cores.

According to various embodiments, a magnetic deflection system 104a . 104b consist of two deflection coils. Furthermore, the corresponding magnetic poles can also be realized by means of a corresponding magnetic yoke.

According to various embodiments, the deflection configurations 104a . 104b also be provided as a common deflection configuration. In other words, the Umlenkkonfigurationen 104a . 104b do not have individual deflection configurations, as clearly illustrated herein can be shown. According to various embodiments, in each case a first magnetic pole of the first deflection configuration 104a and a second magnetic pole of the second deflection configuration 104 by means of only one coil, wherein the one coil can be coupled to a magnetic material, so that the magnetic material (eg an iron yoke) can provide the respective magnetic poles.

According to various embodiments, the containers 108a . 108b also be coupled with each other. In other words, a plurality of crucibles may be provided as a crucible system.

According to various embodiments, the electron beam evaporation arrangement may be provided such that a translationally slow alternating motion 224 of the crucible system in the substrate transport direction is made possible, so that a larger surface area of the material to be evaporated can be used for the electron beam evaporation, as in 2 B is illustrated.

According to various embodiments, the crucible regions of the various material components may be formed by means of a diaphragm arrangement 114 be protected against mutual contamination. For example, the aperture arrangement 114 serve to influence the gradient course in the deposited layer. Furthermore, the diaphragm arrangement can be adjusted in height (along the direction 105 ) and / or positionally adjustable (along the direction 101 and / or the direction 103 ) be. In other words, the distances between the aperture arrangement and the respective container (or evaporation crucible) can be adjustable. Furthermore, the distances between the diaphragm arrangement 114 and the respective vapor sources on the surface of the materials to be evaporated.

According to various embodiments, the container of the respective substance component may consist of two or more sub-containers or may comprise two or more sub-containers. In this modification, the electron beam in the spring blasting method, z. B. generate by means of rapid deflection of the electron beam in each of the crucible, adapted to the coating evaporation sources.

Furthermore, in the case of a multipart part-crucible arrangement, wherein at least one container can have two or more sub-containers, these part-crucibles can be filled with different materials in order to be able to additionally vaporize (eg simultaneously with) at least one further substance component.

According to various embodiments, the containers may not have the same height position with respect to the substrate, but may be adjusted accordingly to optimize the individual coating rates and the gradient. Furthermore, the magnet coil pairs assigned to the respective processor location can have different positions relative to one another and to the processor location. In such a case, the Magnetjochverbindungen may be arranged obliquely.

According to various embodiments, the in 2A and or 2 B shown symmetry of the process configuration is not mandatory. Furthermore, as the fill level of the crucibles decreases, the evaporative material surfaces can be adjusted or adjusted by crucible height adjustment such that the sputtering distance can remain constant, and thus also the geometric conditions for forming the concentration gradient can remain constant.

According to various embodiments, the containers 108a . 108b be arranged side by side.

According to various embodiments, in a gradient layer, or for example in a layer having a material gradient, the chemical composition of the layer material may change along at least one direction. According to various embodiments, the layer thickness of the deposited material may remain constant.

According to various embodiments, vapor sources can be generated by means of the electron beam on the target material, wherein the various vapor sources can be distributed over a large area, for. For example, two vapor sources may have a distance between each other in a range of about 0.5 m to about 2 m. Therefore, by means of the electron beam evaporation arrangement described herein 100 a wide substrate (having a width in a range of about 0.5 m to about 2 m) may be coated with a layer which may have a high layer thickness constancy and / or constant concentration.

According to various embodiments, a method or apparatus for multi-pot evaporation (eg, two-pot vaporizing) may be provided or provided, wherein each substance component may be disposed in a respective vaporization crucible, and wherein the vaporization crucibles may be individually controllable and / or controllable. Due to a certain distance between the respective vapor sources can in the deposition of the material and / or in the Stratification a concentration gradient (or a molar concentration gradient) occur. This concentration gradient in the deposited layer can be made tolerable due to a corresponding evaporation geometry. Furthermore, the concentration gradient in the deposited layer may be desired, as can be used, for example, to form cermet layers.

According to various embodiments, the steam utilization efficiency in electron beam evaporation may be improved by making the distance between the substrate and the vapor sources on the surface of the evaporant low. Therefore, the magnetic deflection configurations for generating the static magnetic fields may be arranged such that a corresponding guidance of the electron beams within the evaporation environment may be realized. Thus, a jet injection and a beam guidance of both electron beams between the vapor source and the substrate to be coated can take place, wherein the electron beams can remain away from the substrate and at the same time a steep angle of incidence of the two electron beams can be realized on the surfaces of the targets. This configuration can be used, for example, to coat a broad substrate, wherein the vapor sources can be generated transversely and symmetrically to the center of the substrate flow with the two rapidly deflected electron beams.

According to various embodiments, in large area coating with large coating widths, the electron beam evaporation assembly described herein may be capable of producing two extended vapor source distributions on two crucibles so that it can be realized to achieve high film thickness consistency and / or constant concentration over the entire width of a substrate.

According to various embodiments, the direction of the electron beam (the emission direction of the electron beam from the electron source) may be deflected or changed by the deflection system in an angular range of about -60 ° to about + 60 °. In this case, the electron beam, for example, along the direction 103 , as in 2A is shown deflected, so that the width of the evaporation (the expansion of the evaporating material 118a . 118b along the direction 103 ) can be better utilized. Furthermore, thus, a large area coating over the entire width of a substrate (expansion of the substrate along the direction 103 ).

According to various embodiments, the first receiving area may include a first container for receiving a first material; and / or the second receiving area may include a second container for receiving a second material.

According to various embodiments, the first magnetic field generated by the first magnetic deflection configuration may be located closer to the first electron beam source than the second magnetic field generated by the second magnetic deflection configuration; and the second magnetic field generated by the second magnetic deflection configuration may be located closer to the second electron beam source than the first magnetic field generated by the first magnetic deflection configuration. Furthermore, in this case, the first magnetic field can deflect the first electron beam and the second magnetic field can deflect the second electron beam.

According to various embodiments, the deflection of the respective electron beam may be understood as being such that the electron beam is deflected from an original direction onto the target, the container, the receiving region, and / or the vaporization material. Furthermore, the electron beam can not impinge on the target, the container, the receiving area, and / or the evaporating material prior to the deflection.

According to various embodiments, the first magnetic deflection configuration and the second magnetic deflection configuration may each comprise two coils, wherein in each case the first coil and the second coil of the deflection configuration are arranged on opposite sides of the corresponding container, cf. for example 1A ,

According to various embodiments, the magnetic deflection configurations may not be coupled or mechanically connected to the respective container.

According to various embodiments, a target material or an evaporable material without a container may be arranged in the corresponding receiving region, for example in the event that no powdered target material or pulverulent evaporating material is used.

According to various embodiments, the orientation of the magnetic fields described herein may be related to the electron beam evaporation arrangement and, for example, not to the electron beam or to the propagation direction of the electron beam itself.

According to various embodiments, the properties of the gradient of the gradient layer can be influenced by means of the crucible height, by means of diaphragms, and / or by means of the power inputs of the electron beams into the target material.

According to various embodiments, the interaction of the deflection system with the deflection configuration may enable a large area coating with high layer thickness homogeneity and steam utilization. Further, the electron beam gun's internal deflection system may allow for the creation of a wide source area for the large area coating. According to various embodiments, the magnetic deflection configuration may allow for a low sputtering distance. Furthermore, the crucible arrangement can not be symmetrical. For example, the crucible assembly may comprise a combination of a larger and a smaller crucible. According to various embodiments, a correction of the distance between crucible and substrate can be carried out during a campaign, so that, for example, the location of the respective vapor sources can remain constant, whereby the coating parameters for the gradient layer can remain unchanged. For example, according to various embodiments, placing the electron beam evaporation assembly below the coating area may allow for a smaller distance between the crucible and the substrate. Furthermore, this may allow better utilization of the material.

According to various embodiments, a gas inlet may be integrated into the crucible assembly. For example, a first crucible, a second crucible and a gas inlet can be arranged in the corresponding receiving areas. Furthermore, for example, the first crucible may have a first target material, for. B. Mo, and the second crucible may have a second target material, for. For example, alumina (or Al ₂ O ₃ ) and by means of the gas inlet, for example, oxygen can be admitted, so that a Mo / MoAl _x O _y / Al ₂ O ₃ gradient layer is deposited or can be deposited. According to various embodiments, in addition to the vaporized material, a process gas may be provided, for example oxygen.

According to various embodiments, the substrate transport may be uniformly straight through the coating area or in the coating area. Furthermore, the substrate in the coating area can be transported via a roller, for example a cooled transport roller, so that the substrate movement is substantially circular or takes place at least partially on a circular path.

According to various embodiments, a magnetic coupling may be effected between a first deflection configuration and a second deflection configuration by means of a magnetic conductor, for example by means of a structure comprising a magnetic or magnetizable material. Furthermore, the magnetic coupling can be considered as a proximity effect.

A magnetic coupling can take place, for example, by means of a yoke or iron yoke, thereby producing a forced guidance of the magnetic field.

According to various embodiments, the vaporized target material may generate a vapor propagation region such that, for example, a coating zone is formed near the substrate. The coating zone, the deposition region and / or the coating region can, for example, also run along a curved surface.

The dual coil deflection configuration as described herein may be, for example, a component of a coating arrangement (electron beam evaporation arrangement), wherein the magnetic deflection system, the crucible system and the electron beam device may each be separate components of the arrangement, so that they can be optimally matched in their geometry can. In this case, for example, with the help of the deflection of the electron beam device, a plurality of surface-extended source figures on the evaporation material of a crucible with a large surface area can be generated. This can be used for example for application for large area coating or be advantageous. Since the crucible is not rebuilt by the magnet system, the crucible can also be chosen independently of other components in size such that, for example, the material storage is sufficient for long coating campaigns, and the crucible can for example also be subjected to a suitable crucible movement advantageous for a uniform surface removal.

The magnetic beam deflection can serve, for example, to shoot the electron beam flat below the substrate transport region and then direct the electron beam as steeply as possible to the evaporating material. As a result, for example, on the one hand be evaporated over a large area and on the other hand coated with low Spampfungsabstand, so that a high steam utilization can be achieved. The layer thickness accuracy during a deposition process can be improved by the fact that, with the arrangement described herein, a source distribution and distribution angle distribution symmetrical to the electron beam injection can be or can be made possible. This symmetry can not be given, for example, in oblique incisions of the electron beam or in a magnetic trap used.

The evaporator system (coating arrangement) with a double-coil deflection system can vaporize two materials from two crucibles by means of the two electron-beam devices, wherein, for example, the following aspects can be realized: a low vapor deposition distance, a large two-dimensional source surface extent of the vapor source (for example, several vapor sources each having one) Guns), an open design and spatial arrangement of the magnet system (eg, a crucible-separate component that does not restrict crucible size), a vaporizer crucible with large two-dimensionally extended surface, crucible adjustability, power distribution symmetry, and vapor density distribution across coating substrate, with application areas for this can relate to an alloy evaporation, a gradient coating and / or a doping.

The magnetically coupled by a yoke for positive guidance of the magnetic field coil pairs can allow electron beam evaporation by means of opposing electron beam sources. Furthermore, along the connecting line between the electron beam guns (along the substrate transport direction), for example, the pairs of magnet coils can be arranged one after the other, wherein each pair of coils can be arranged symmetrically with respect to the substrate flow and opposite the evaporator crucibles to the same plane of symmetry.

Claims (20)

Electron beam evaporation arrangement ( 100 ) comprising: a first electron beam source ( 102 ) arranged to provide a first electron beam ( 112a ); A second electron beam source ( 102b ) arranged to provide a second electron beam ( 112b ); • a first recording area ( 106a ) for receiving at least a first material ( 118a ); • a second recording area ( 106b ) for receiving at least one second material ( 118b ); A first magnetic deflection configuration ( 104a ) for generating a first magnetic field, arranged for deflecting the first electron beam ( 112a ) from a lateral direction to the first receiving area ( 106a ); and a second magnetic deflection configuration ( 104b ) for generating a second magnetic field, arranged for deflecting the second electron beam ( 112b ) from a lateral direction to the second receiving area ( 106b ); • where the first deflection configuration ( 104a ) and the second deflection configuration ( 104b ) are magnetically coupled to each other and are arranged such that the first magnetic field and the second magnetic field are oriented opposite to each other. Electron beam evaporation arrangement according to claim 1, wherein the first deflection configuration ( 104a ) and the second deflection configuration ( 104b ) with each other by means of a magnetic coupling configuration ( 204 ) are magnetically coupled. An electron beam evaporation device according to claim 1 or 2, wherein the first electron beam source ( 102 ) and / or the second electron beam source ( 102b ) comprise / has an electron beam gun. Electron beam evaporation arrangement according to one of claims 1 to 3, wherein the first receiving area ( 106a ) and the second recording area ( 106b ) between the first electron beam source ( 102 ) and the second electron beam source ( 102b ) are arranged. Electron beam evaporation arrangement according to one of claims 1 to 4, • wherein the first receiving area ( 106a ) at least one first container ( 108a ) for receiving the at least one first material ( 118a ); and / or wherein the second receiving area ( 106b ) at least one second container ( 108b ) for receiving the at least one second material ( 118b ). Electron beam evaporation arrangement according to one of claims 1 to 5, wherein the at least one first material ( 118a ) in the first receiving area ( 106a ) is included; and wherein the at least one second material ( 118b ) in the second receiving area ( 106b ) is recorded. Electron beam evaporation arrangement according to one of claims 1 to 6, wherein the at least one first material ( 118a ) and the at least one second material ( 118b ) are different materials. Electron beam evaporation arrangement according to one of claims 1 to 7, • where the first recording area ( 106a ) closer to the first electron beam source ( 102 ) is arranged as the second receiving area ( 106b ); and wherein the second recording area ( 106b ) closer to the second electron beam source ( 102b ) is arranged as the first receiving area ( 106a ). Electron beam evaporation arrangement according to one of claims 1 to 8, wherein the first magnetic deflection configuration ( 104a ) and / or the second magnetic deflection configuration ( 104b ) comprise a magnet arrangement and / or a coil arrangement. Electron beam evaporation arrangement according to claim 9, wherein the first magnetic deflection configuration ( 104a ) has a first magnet and / or a first coil; Wherein the second magnetic deflection configuration ( 104b ) has a second magnet and / or a second coil. Electron beam evaporation arrangement according to one of claims 1 to 10, wherein the first deflection configuration ( 104a ) and the second deflection configuration ( 104b ) by means of at least one yoke ( 204 ) are magnetically coupled together. Coating system comprising: a vacuum chamber; and • an electron beam evaporation arrangement arranged in the vacuum chamber ( 100 ) according to any one of claims 1 to 11 for depositing a gradient layer on a substrate in a coating region of the vacuum chamber. Coating plant according to claim 12, further comprising: A transport device for transporting a substrate through the coating area. Coating plant according to claim 12 or 13, wherein the electron beam evaporation arrangement ( 100 ) is disposed at least partially below the coating area. Coating plant according to one of claims 12 to 14, wherein the complete electron beam evaporation arrangement ( 100 ) is disposed below a deposition area within the coating area. A method of depositing a layer on a substrate in a vacuum chamber, the method comprising: deflecting a first electron beam ( 112a ) by means of a first magnetic field of a first magnetic deflection configuration ( 104a ) from a lateral direction to a first receiving area ( 106a ), in which at least a first material ( 118a ), so that a part of the at least one first material ( 118a ) is evaporated; Deflecting a second electron beam ( 102b ) by means of a second magnetic field of a second magnetic deflection configuration ( 104b ) from a lateral direction to a second receiving area ( 106b ), in which at least one second material ( 118b ), so that part of the at least one second material ( 118b ) is evaporated; • depositing the at least one first material ( 118a ) and the at least one second material ( 118b ) on the substrate in a coating region of the vacuum chamber; Where the first magnetic deflection configuration ( 104a ) and the second magnetic deflection configuration ( 104b ) are magnetically coupled to each other and are arranged such that the first magnetic field and the second magnetic field are oriented opposite to each other. The method of claim 16, further comprising: Transporting the substrate through the coating area of the vacuum chamber. A method according to claim 16 or 17, wherein the at least one first material ( 118a ) and the at least one second material ( 118b ) are deposited on the substrate with a gradient of material. A method according to any one of claims 16 to 18, wherein a material of the at least one first material ( 118a ) and the at least one second material ( 118b ) Aluminum and another material of the at least one first material ( 118a ) and the at least one second material ( 118b ) Comprises silicon. Method according to one of claims 16 to 19, wherein the deposition of the at least one first material ( 118a ) and the at least one second material ( 118b ) on a tape substrate or a continuous substrate.

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