DE102010062582A1 - electronic component - Google Patents

electronic component Download PDF

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Publication number
DE102010062582A1
DE102010062582A1 DE102010062582A DE102010062582A DE102010062582A1 DE 102010062582 A1 DE102010062582 A1 DE 102010062582A1 DE 102010062582 A DE102010062582 A DE 102010062582A DE 102010062582 A DE102010062582 A DE 102010062582A DE 102010062582 A1 DE102010062582 A1 DE 102010062582A1
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Prior art keywords
shunt
connection
connection element
base
area
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DE102010062582A
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German (de)
Inventor
Hans Irion
Georg Voegele
Jochen Kurfiss
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Robert Bosch GmbH
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Robert Bosch GmbH
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Priority to DE102010062582A priority Critical patent/DE102010062582A1/en
Priority to PCT/EP2011/071607 priority patent/WO2012076407A1/en
Priority to EP11802304.3A priority patent/EP2649461A1/en
Publication of DE102010062582A1 publication Critical patent/DE102010062582A1/en
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49541—Geometry of the lead-frame
    • H01L23/49562—Geometry of the lead-frame for devices being provided for in H01L29/00
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/20—Modifications of basic electric elements for use in electric measuring instruments; Structural combinations of such elements with such instruments
    • G01R1/203—Resistors used for electric measuring, e.g. decade resistors standards, resistors for comparators, series resistors, shunts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49517—Additional leads
    • H01L23/49524—Additional leads the additional leads being a tape carrier or flat leads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49575—Assemblies of semiconductor devices on lead frames
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L24/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L24/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/0601—Structure
    • H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
    • H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
    • H01L2224/37001—Core members of the connector
    • H01L2224/37099—Material
    • H01L2224/371—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/37138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/37147—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/62—Protection against overvoltage, e.g. fuses, shunts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L24/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
    • H01L24/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/30107—Inductance

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Inverter Devices (AREA)

Abstract

Die vorliegende Erfindung betrifft eine Vorrichtung, umfassend ein Halbleiterbauteil (2) und ein Anbindungselement (3) zur Herstellung eines elektrisch leitenden Kontaktes für das Halbleiterbauteil (2), wobei ein Shunt (33) in das Anbindungselement (3) integriert ist.The present invention relates to a device comprising a semiconductor component (2) and a connection element (3) for producing an electrically conductive contact for the semiconductor component (2), a shunt (33) being integrated into the connection element (3).

Description

Stand der TechnikState of the art

Die vorliegende Erfindung betrifft eine Vorrichtung mit einem Halbleiterbauteil, insbesondere einem MOSFET, mit einer verbesserten Strommessung mittels eines Shunts.The present invention relates to a device with a semiconductor device, in particular a MOSFET, with an improved current measurement by means of a shunt.

Bei heutigen Anwendungen von Elektronikbauteilen, beispielsweise bei bürstenlosen, dreiphasigen Maschinen, ist es notwendig, die Phasenströme der elektrischen Maschine zu kennen, um eine genaue Ansteuerung zu erreichen. Hierbei wird eine Strommessung mittels eines Shunts in jeder Phase als Drei-Shunt-Strom-Messung oder mittels eines einzigen Shunts in einem gemeinsamen Massezweig aller Phasen als sogenannte Ein-Shunt-Strom-Messung durchgeführt. Eine Ein-Shunt-Strom-Messung reduziert dabei Kosten und Bauraum, birgt jedoch Nachteile in Bezug auf eine Rippelstrombelastung und einer Geräuschanregung auf die elektrische Maschine. Daher müssen bei bestimmten Anwendungen Drei-Shunt-Strom-Messungen durchgeführt werden, welche jedoch die Kosten des Bauteils ungefähr verdreifachen.In today's applications of electronic components, for example in brushless, three-phase machines, it is necessary to know the phase currents of the electrical machine in order to achieve an accurate control. Here, a current measurement by means of a shunt in each phase as a three-shunt current measurement or by means of a single shunt in a common ground branch of all phases is performed as a so-called one-shunt current measurement. A single-shunt current measurement reduces costs and installation space, but has disadvantages with respect to a ripple current load and a noise excitation on the electric machine. Therefore, in some applications, three-shunt current measurements need to be performed, which, however, approximately triple the cost of the device.

Aus der US 2004/0155645 A1 ist ein Elektronikbauteil bekannt, bei der ein Shunt auf einem Substrat angeordnet ist. Der Shunt ist dabei mit Anschlüssen eines MOSFETs verbunden, wodurch sich ein zusätzlicher Raumbedarf auf dem Substrat ergibt.From the US 2004/0155645 A1 An electronic component is known in which a shunt is arranged on a substrate. The shunt is connected to terminals of a MOSFET, which results in an additional space requirement on the substrate.

Offenbarung der ErfindungDisclosure of the invention

Die erfindungsgemäße Vorrichtung mit einem Halbleiterbauteil mit den Merkmalen des Anspruchs 1 weist demgegenüber den Vorteil auf, dass eine sehr kostengünstige Shunt-Strom-Messung durchgeführt werden kann. Hierbei muss für den Shunt kein teurer Raum auf einer Leiterplatte vorgehalten werden und der Shunt kann erfindungsgemäß sehr gut entwärmt werden. Darüber hinaus können mittels der Erfindung Stoffkosten sowie insbesondere eine Montagezeit signifikant reduziert werden. Dies wird erfindungsgemäß dadurch erreicht, dass der Shunt in ein Anbindungselement des Halbleiterbauteils integriert ist. Somit übernimmt das Anbindungselement neben der Anbindungsfunktion auch noch zusätzlich die Strom-Mess-Funktion durch Integration des Shunts. Dadurch können zusätzliche Verbindungen für eine Shunt-Messung entfallen und ferner wird auch eine parasitäre Induktivität in einem DC-Zweig des Halbleiterbauteils reduziert. Dies führt zu dem weiteren Vorteil eines schnelleren Schaltens des Halbleiterbauteils. Darüber hinaus kann erfindungsgemäß eine signifikant genauere Strommessung erreicht werden. Gleichzeitig wird durch den reduzierten Widerstand ein Wirkungsgrad erhöht.The device according to the invention with a semiconductor device having the features of claim 1 has the advantage that a very cost-effective shunt current measurement can be performed. In this case, no expensive space must be kept on a circuit board for the shunt and the shunt can be very well cooled according to the invention. In addition, by means of the invention, it is possible to significantly reduce material costs and, in particular, an assembly time. This is inventively achieved in that the shunt is integrated into a connection element of the semiconductor device. Thus, in addition to the connection function, the connection element also additionally assumes the current measurement function by integrating the shunt. As a result, additional connections for a shunt measurement can be dispensed with, and furthermore a parasitic inductance in a DC branch of the semiconductor component is also reduced. This leads to the further advantage of faster switching of the semiconductor device. In addition, a significantly more accurate current measurement can be achieved according to the invention. At the same time an efficiency is increased by the reduced resistance.

Die Unteransprüche zeigen bevorzugte Weiterbildungen der Erfindung.The dependent claims show preferred developments of the invention.

Besonders bevorzugt ist das Anbindungselement brückenartig mit einem ersten und zweiten Basisbereich sowie einem die beiden Basisbereiche verbindenden Verbindungsbereich ausgebildet. Der Shunt ist dabei im Verbindungsbereich angeordnet. Hierbei muss keine Verlängerung des Anbindungselements im Vergleich zu den bisher verwendeten Anbindungselementen erfolgen. Der Shunt wird lediglich in den Verbindungsbereich integriert. Besonders bevorzugt ist der gesamte Verbindungsbereich als Shunt ausgebildet.Particularly preferably, the connection element is designed bridge-like with a first and second base region and a connecting region connecting the two base regions. The shunt is arranged in the connection area. In this case, no extension of the connection element in comparison to the previously used connection elements must be done. The shunt is merely integrated into the connection area. Particularly preferably, the entire connection region is designed as a shunt.

Weiter bevorzugt umfasst die Vorrichtung einen ersten Erfassungsanschluss benachbart zum ersten Basisbereich des Anbindungselements und einen zweiten Erfassungsanschluss benachbart zum zweiten Basisbereich des Anbindungselements. Hierdurch kann ein besonders kompakter Aufbau realisiert werden. Besonders bevorzugt sind die Erfassungsanschlüsse am ersten und zweiten Basisbereich mittels einer Bondverbindung (Bondpads) fixiert.More preferably, the device comprises a first detection terminal adjacent to the first base portion of the attachment member and a second detection terminal adjacent to the second base portion of the attachment member. This allows a particularly compact design can be realized. Particularly preferably, the detection terminals are fixed to the first and second base regions by means of a bond connection (bonding pads).

Besonders bevorzugt werden dabei in einem Schritt die Basisbereiche und die Erfassungsanschlüsse mittels einer gemeinsamen Bondverbindung fixiert.Particularly preferably, in one step, the base regions and the detection connections are fixed by means of a common bond connection.

Gemäß einer bevorzugten alternativen Ausgestaltung der Erfindung sind der erste und/oder der zweite Erfassungsanschluss in den Basisbereich des Anbindungselements integriert. Hierdurch kann eine Anordnung der Erfassungsanschlüsse an den Basisbereichen ohne Bondverbindung realisiert werden.According to a preferred alternative embodiment of the invention, the first and / or the second detection terminal are integrated in the base region of the connection element. In this way, an arrangement of the detection terminals can be realized at the base areas without bond connection.

Weiter bevorzugt ist das Halbleiterbauteil ein MOSFET. Besonders bevorzugt ist das Anbindungselement eine Source-Anbindung.More preferably, the semiconductor device is a MOSFET. Particularly preferably, the connection element is a source connection.

Gemäß einer weiteren bevorzugten Ausgestaltung der Erfindung ist die Vorrichtung eine Leistungselektronik für eine bürstenlose, dreiphasige elektrische Maschine, welche für jede Phase ein erfindungsgemäßes Anbindungselement mit integriertem Shunt aufweist.According to a further preferred embodiment of the invention, the device is a power electronics for a brushless, three-phase electric machine, which has an inventive connecting element with integrated shunt for each phase.

Besonders bevorzugt sind der erste und zweite Basisbereich aus Kupfer und der als Shunt ausgebildete Verbindungsbereich umfasst Manganin und/oder Ceranin.The first and second base regions are particularly preferably made of copper, and the connection region formed as a shunt comprises manganin and / or ceranin.

Die vorliegende Erfindung wird insbesondere in Verbindung mit Lenkungsanwendungen bei Verwendung von bürstenlosen, dreiphasigen elektrischen Maschinen verwendet. Grundsätzlich kann die vorliegende Erfindung jedoch bei allen Produkten mit einer feldorientierten Regelung, bei der eine Strommessung der Phasen erforderlich ist, verwendet werden, wobei insbesondere Leistungsanwendungen bevorzugt sind.The present invention is particularly used in conjunction with steering applications using brushless, three-phase electrical machines. Basically, however, the present invention in all products with a field-oriented control, in which a Current measurement of the phases is required, in particular power applications are preferred.

Zeichnungdrawing

Nachfolgend wird ein bevorzugtes Ausführungsbeispiel der Erfindung unter Bezugnahme auf die begleitende Zeichnung im Detail beschrieben. In der Zeichnung ist:Hereinafter, a preferred embodiment of the invention will be described in detail with reference to the accompanying drawings. In the drawing is:

1 eine schematische Draufsicht einer Leistungselektronik gemäß einem Ausführungsbeispiel der Erfindung, und 1 a schematic plan view of a power electronics according to an embodiment of the invention, and

2 eine schematische, perspektivische Ansicht eines erfindungsgemäßen Anbindungselements mit integriertem Shunt. 2 a schematic, perspective view of a connection element according to the invention with integrated shunt.

Bevorzugte Ausführungsform der ErfindungPreferred embodiment of the invention

Nachfolgend wird unter Bezugnahme auf die 1 und 2 eine erfindungsgemäße elektronische Vorrichtung beschrieben. In diesem Ausführungsbeispiel ist die erfindungsgemäße Vorrichtung eine Leistungselektronik 1. Die Leistungselektronik 1 umfasst drei Halbleiterbauteile, welche als MOSFETs 2 ausgebildet sind. Die MOSFETs 2 weisen an einer Oberseite eine Kontaktfläche auf, welche jeweils über Anbindungselemente 3 mit einem gemeinsamen Source-Anschluss 4 verbunden sind.The following is with reference to the 1 and 2 an electronic device according to the invention described. In this embodiment, the device according to the invention is a power electronics 1 , The power electronics 1 includes three semiconductor devices, which are called MOSFETs 2 are formed. The MOSFETs 2 have on a top on a contact surface, which in each case via connecting elements 3 with a common source connection 4 are connected.

Die Anbindungselemente 3 sind im Detail aus 2 ersichtlich. Wie aus 2 entnommen werden kann, weisen die Anbindungselemente 3 einen brückenartigen Aufbau mit einem ersten Basisbereich 31, einem zweiten Basisbereich 32 und einem Verbindungsbereich auf. Der Verbindungsbereich ist dabei als Shunt 33 ausgebildet, wobei der Shunt 33 über die gesamte Breite des Verbindungsbereichs verläuft. Somit ist erfindungsgemäß ein Shunt 33 in das Anbindungselement 3 integriert. Hierdurch kann erfindungsgemäß eine Direktkontaktierung des Shunts mit dem MOSFET 2 erfolgen, wodurch eine Anzahl von Kontaktstellen reduziert werden kann. Durch die direkte Anbindung kann der Shunt 33 besser entwärmt werden, wodurch reduzierte Kühlanforderungen der Vorrichtung möglich sind. Ferner sind im Vergleich mit herkömmlichen Aufbauten mit separaten Shunts und Kupfer-Anbindungselementen die ohmschen Gesamtverluste geringer, da eine bessere Stromverteilung möglich ist und eine Symmetrie auf dem MOSFET erreichbar ist.The connection elements 3 are out in detail 2 seen. How out 2 can be removed, have the connection elements 3 a bridge-like structure with a first base region 31 , a second base area 32 and a connection area. The connection area is a shunt 33 formed, with the shunt 33 extends over the entire width of the connection area. Thus, according to the invention is a shunt 33 in the connection element 3 integrated. As a result, according to the invention, a direct contacting of the shunt with the MOSFET 2 take place, whereby a number of contact points can be reduced. Due to the direct connection, the shunt 33 be better cooled, whereby reduced cooling requirements of the device are possible. Furthermore, in comparison with conventional structures with separate shunts and copper connection elements, the total ohmic losses are lower, since a better current distribution is possible and a symmetry on the MOSFET can be achieved.

Wie weiter aus 2 ersichtlich ist, ist ein erster Shunt-Erfassungsanschluss 5 (Serienanschluss) mittels eines ersten Bondkontakts 7 mit dem ersten Basisbereich 31 des Anbindungselements 3 verbunden. Hierbei ist zwischen dem Bonddraht 7 und dem ersten Basisbereich 31 ein Bondpad 9 vorgesehen. Weiter ist ein zweiter Shunt-Erfassungsanschluss 6 mittels eines zweiten Bonddrahts 8 und eines zweiten Bondpads 10 mit dem zweiten Basisbereich 32 verbunden. Somit erfolgt die Bondung in der Nähe des Shunts 33. Die Bonddrähte 7, 8 sind auch über Bondverbindungen 11, 12 mit den Erfassungsanschlüssen 5, 6 verbunden.How farther 2 is apparent, is a first shunt detection terminal 5 (Serial connection) by means of a first bonding contact 7 with the first base area 31 of the connection element 3 connected. Here is between the bonding wire 7 and the first base area 31 a bondpad 9 intended. Next is a second shunt detection port 6 by means of a second bonding wire 8th and a second bondpad 10 with the second base area 32 connected. Thus, the bonding takes place near the shunt 33 , The bonding wires 7 . 8th are also via bond connections 11 . 12 with the detection terminals 5 . 6 connected.

Erfindungsgemäß kann somit teurer Raumbedarf in der Leistungselektronik 1 eingespart werden. Ferner können Stoffkosten und Montagezeit eingespart werden, da der Shunt 33 in das Anbindungselement 3 integriert ist. Somit kann erfindungsgemäß ohne zusätzlichen Flächenbedarf eine Strommessung durch die integrierten Shunts 33 ermöglicht werden. Dabei wird das Anbindungselement 3 mittels des ersten Basisbereichs 31 direkt auf eine Kontaktfläche des MOSFETs 2 aufgebracht. Hierbei werden besonders bevorzugt gleichzeitig die Bonddrähte 7, 8 an die Basisbereiche 31, 32 der Anbindungselemente mitgebondet. Dadurch ist kein zusätzlicher Schritt für das Anbringen des Shunts 33 notwendig.According to the invention thus expensive space requirements in power electronics 1 be saved. Furthermore, material costs and installation time can be saved, since the shunt 33 in the connection element 3 is integrated. Thus, according to the invention without additional space requirement, a current measurement through the integrated shunts 33 be enabled. This is the connection element 3 by means of the first base area 31 directly on a contact surface of the MOSFET 2 applied. In this case, the bonding wires are particularly preferably simultaneously 7 . 8th to the base areas 31 . 32 mitgebondet the connection elements. This is not an extra step for attaching the shunt 33 necessary.

ZITATE ENTHALTEN IN DER BESCHREIBUNG QUOTES INCLUDE IN THE DESCRIPTION

Diese Liste der vom Anmelder aufgeführten Dokumente wurde automatisiert erzeugt und ist ausschließlich zur besseren Information des Lesers aufgenommen. Die Liste ist nicht Bestandteil der deutschen Patent- bzw. Gebrauchsmusteranmeldung. Das DPMA übernimmt keinerlei Haftung für etwaige Fehler oder Auslassungen.This list of the documents listed by the applicant has been generated automatically and is included solely for the better information of the reader. The list is not part of the German patent or utility model application. The DPMA assumes no liability for any errors or omissions.

Zitierte PatentliteraturCited patent literature

  • US 2004/0155645 A1 [0003] US 2004/0155645 A1 [0003]

Claims (10)

Vorrichtung, umfassend ein Halbleiterbauteil (2) und ein Anbindungselement (3) zur Herstellung eines elektrisch leitenden Kontaktes für das Halbleiterbauteil (2), wobei ein Shunt (33) in das Anbindungselement (3) integriert ist.Device comprising a semiconductor device ( 2 ) and a connection element ( 3 ) for producing an electrically conductive contact for the semiconductor device ( 2 ), where a shunt ( 33 ) in the connection element ( 3 ) is integrated. Vorrichtung nach Anspruch 1, dadurch gekennzeichnet, dass das Anbindungselement (3) mit einem ersten Basisbereich (31), einem zweiten Basisbereich (32) und einem Verbindungsbereich ausgebildet ist, wobei der Shunt (33) im Verbindungsbereich angeordnet ist.Apparatus according to claim 1, characterized in that the connection element ( 3 ) with a first base area ( 31 ), a second base area ( 32 ) and a connection region, wherein the shunt ( 33 ) is arranged in the connection area. Vorrichtung nach Anspruch 2, dadurch gekennzeichnet, dass der Verbindungsbereich vollständig als Shunt (33) ausgebildet ist.Apparatus according to claim 2, characterized in that the connection area completely as a shunt ( 33 ) is trained. Vorrichtung nach Anspruch 2 oder 3, dadurch gekennzeichnet, dass ein erster Erfassungsanschluss (5) benachbart zum ersten Basisbereich (31) und ein zweiter Erfassungsanschluss (6) benachbart zum zweiten Basisbereich (32) angeordnet ist.Apparatus according to claim 2 or 3, characterized in that a first detection terminal ( 5 ) adjacent to the first base region ( 31 ) and a second detection terminal ( 6 ) adjacent to the second base region ( 32 ) is arranged. Vorrichtung nach Anspruch 4, dadurch gekennzeichnet, dass der erste und zweite Erfassungsanschluss (5, 6) am Basisbereich (31, 32) mittels einer Bondverbindung (9, 10) fixiert ist.Device according to claim 4, characterized in that the first and second detection terminals ( 5 . 6 ) at the base area ( 31 . 32 ) by means of a bond connection ( 9 . 10 ) is fixed. Vorrichtung nach Anspruch 2 oder 3, dadurch gekennzeichnet, dass der erste und/oder der zweite Erfassungsanschluss (5, 6) in den Basisbereich (31, 32) des Anbindungselements (3) integriert ist.Apparatus according to claim 2 or 3, characterized in that the first and / or the second detection terminal ( 5 . 6 ) into the base area ( 31 . 32 ) of the connection element ( 3 ) is integrated. Vorrichtung nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass das Halbleiterbauteil (2) ein MOSFET ist.Device according to one of the preceding claims, characterized in that the semiconductor component ( 2 ) is a MOSFET. Vorrichtung nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass das Anbindungselement (3) das Halbleiterbauteil (2) mit einem Source-Anschluss (4) verbindet.Device according to one of the preceding claims, characterized in that the connection element ( 3 ) the semiconductor device ( 2 ) with a source connection ( 4 ) connects. Vorrichtung nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass die Vorrichtung eine Leistungselektronik ist.Device according to one of the preceding claims, characterized in that the device is a power electronics. Vorrichtung nach einem der Ansprüche 2 bis 9, dadurch gekennzeichnet, dass der erste Basisbereich (31) an einer Oberfläche des Halbleiterbauteils (2) angeordnet ist.Device according to one of claims 2 to 9, characterized in that the first base region ( 31 ) on a surface of the semiconductor device ( 2 ) is arranged.
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DE102012212946A1 (en) * 2012-07-24 2014-02-13 Siemens Aktiengesellschaft Current detection system
DE102012212946B4 (en) * 2012-07-24 2016-06-30 Siemens Aktiengesellschaft Current detection system
DE102013213348A1 (en) * 2013-07-08 2015-01-08 Siemens Aktiengesellschaft Power semiconductor module and electric drive with a power semiconductor module
DE102013213348B4 (en) 2013-07-08 2019-07-04 Siemens Aktiengesellschaft Power semiconductor module and electric drive with a power semiconductor module
CN112020202A (en) * 2019-05-29 2020-12-01 法雷奥西门子新能源汽车(德国)有限公司 Device with a power electronic substrate and a contact element, power electronic unit and converter
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FR3115947A1 (en) * 2020-11-03 2022-05-06 Valeo Equipements Electriques Moteur ELECTRONIC MODULE FOR ELECTRIC MACHINE

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