CN2434686Y - Light injection whole internally reflecting 1XN all light switch array - Google Patents
Light injection whole internally reflecting 1XN all light switch array Download PDFInfo
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- CN2434686Y CN2434686Y CN 00246811 CN00246811U CN2434686Y CN 2434686 Y CN2434686 Y CN 2434686Y CN 00246811 CN00246811 CN 00246811 CN 00246811 U CN00246811 U CN 00246811U CN 2434686 Y CN2434686 Y CN 2434686Y
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Abstract
The utility model relates to a light injection whole internal reflecting 1XN all light switch array, the wheatear-shaped light switch array is composed of a straight through light waveguide and deflection light waveguides which are alternatively arranged at both side of the straight through light waveguide; an asymmetric Y branch is as an output end. Light injection zones are respectively arranged at branch portions of straight through light waveguide and each deflection light waveguide; when light injects a certain light injection zone, the transmission light in the straight through light waveguide can generate full reflection and is reflected in the deflection light waveguide here to achieve the light switch function. The all light switch array has minimal heating; the switching speed achieves nanosecond order of magnitude. The utility model has the advantages of uniform intensity of output light, low cross talk, easy extension of output end, small dimension and easy integration.
Description
The utility model relates to a kind of switch array, particularly internal reflection type 1 * N all optical switching array.
The all optical switching array is the indispensable Primary Component of Networks of Fiber Communications, especially in the broad band full exchange network and the photon integrated circuit in future.At present, common internal reflection type 1 * N switch array elementary cell is to be made of straight-through optical waveguide, deflection waveguide and current injection area, its structure is tree-like, this switch array in the injection region owing to adopt electric current to inject, it is more serious to generate heat, its carrier lifetime is generally the microsecond magnitude, makes switching speed restricted; Owing to need easily to cause the output light intensity of each output terminal inhomogeneous by total reflection number of times difference, cross-talk is bigger at each output terminal, and device length is also longer.As network topology structure complexity when adopting direct reflection and Bragg reflection-type total reflection structure to constitute clog-free switch array, and manufacture craft is difficult.
The purpose of this utility model provides the uniform internal reflection type 1 of a kind of little output light intensity that generates heat * N all optical switching array.
The purpose of this utility model realizes by following measure: its elementary cell is to be made of straight-through optical waveguide, deflection waveguide and injection region, architectural feature is: be arranged alternately the deflection waveguide of asymmetric Y bifurcated in straight-through optical waveguide both sides, constitute the switch array of shape picture " wheat head " shape as output terminal; Described injection region is the light injection region, crotch in straight-through optical waveguide and all deflection waveguides is provided with the light injection region respectively, when light beam is gone into a certain smooth injection region, can make the transmission light generation total reflection in the straight-through optical waveguide, and be injected in the deflection waveguide at this place, reach the function of photoswitch.
The utlity model has following characteristics:
1. owing to adopted the light injection region, because of the effective luminous energy of light pulse is the millijoule magnitude, and only need an injection region to inject, so it is minimum to generate heat;
2. the speed because of the pouring-in photoswitch of light depends primarily on the photo-generated carrier recombination lifetime, utilizes the applying bias householder method can make the pouring-in photoswitch speed of light reach nanosecond order;
3. be output terminal owing to directly having adopted the deflection waveguide of alternately making asymmetric Y bifurcated in straight-through optical waveguide both sides, global shape picture " wheat head " shape, each output terminal is only through once transmitting the light total internal reflection like this, so the output light intensity good uniformity of output terminal, cross-talk is low;
4. " wheat head " shape structure is easily expanded output port, and size is easy to integrated for a short time, is convenient to develop all optical switching device of substrate mixing integrated-type;
5. light beam is gone into method and is extended to X knot, the isostructural full-internal reflection type switch array of grid.
The utility model is described in further detail below in conjunction with accompanying drawing.
Fig. 1 is a structural representation of the present utility model;
Fig. 2 is the structural representation of optical switch element.
Embodiment is with reference to Fig. 1, Fig. 2
1. according to planar optical waveguide theory and Effective Index Method,, adopt the basic technology of semiconductor to make optical waveguide according to the structural design monomode optical waveguide array of accompanying drawing.
2. optical waveguide design: concrete size is relevant with selected materials, input light wavelength etc., as input light wave for 1.3 microns, the employing ducting layer is 1.2 microns a single heterojunction waveguide material (GaAs/GaAlAs), then the duct width of switch element is 4 microns, the ridge height of ridge waveguide is 0.4 micron, the bending of S shape is adopted in deflection waveguide 1, and radius-of-curvature is greater than 5 millimeters.The angle of light injection region 3 and straight-through optical waveguide 2 is half of deflection waveguide 1 and straight-through optical waveguide 2 angles 2 θ, and angular dimension depends on the refractive index decline scope that light beam goes into to cause, is 0.02 as refringence, and θ gets 2 degree.Deflection waveguide 1 is alternately distributed in straight-through optical waveguide 2 both sides forms " wheat head " shape switch array, and two adjacent light beams are gone into district's 3 spacings should get 250 microns as two adjacent deflection waveguides, 1 horizontal interval of output terminal greater than the length of light injection region 3.
3. adopt the ordinary semiconductor manufacture craft, make optical waveguide and light injection region 3.
The manufacture craft flow process that the making of straight-through optical waveguide 2 and deflection waveguide 1 directly adopts photoresist to make mask is: waveguide substrate cleaning → resist coating → ultraviolet photoetching → development → etching (wet etching or the dry etching) → cleaning of removing photoresist.
The making manufacture craft flow process of light injection region 3 is: cleaning → resist coating → ultraviolet photoetching → development → vacuum plated aluminum film → peel off; Or employing anti-carves method: cleaning → vacuum plated aluminum film → resist coating → ultraviolet photoetching → development → corrosion aluminium film.
The position adopts autoregistration cover carving method to realize aiming between straight-through optical waveguide 2 and the injection region 3.
4. light stimulus adopts wavelength to be slightly less than 10 of waveguide material absorption peak wavelength (as for the GaAs material, light beam light inlet wave-wave length is chosen as 0.79 micron)
0The semiconductor laser of mW magnitude directly injects, and light injection region 3 usefulness aluminium films are isolated, 4 microns of light injection region 3 width, and length depends on the width of straight-through optical waveguide 2 and the angle of deflection waveguide 1, can be tried to achieve by geometric relationship.Injection mode can be used the vertical injection region of multimode optical fiber array direct irradiation, or utilizes substrate mixing integrated technology, and the employing surface launching is luminous, the laser diode array method realizes that the effective luminous energy of single light pulse is in 1 millijoule.
Claims (1)
1, a kind of light injection and fully internal reflection type 1 XN light switch array, by straight-through optical waveguide [2], deflection waveguide [1] and injection region [3] formation, it is characterized in that: the deflection waveguide [1] as output terminal that is arranged alternately asymmetric Y bifurcated in straight-through optical waveguide [2] both sides constitutes " wheat head " shape switch array; Described injection region [3] is the light injection region, is separately positioned on the transmission light generation total reflection that can make when light beam is gone into a certain smooth injection region in the straight-through optical waveguide [2], and is injected into straight-through optical waveguide [2] and deflection waveguide [1] crotch in this place deflection waveguide [1].
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 00246811 CN2434686Y (en) | 2000-07-27 | 2000-07-27 | Light injection whole internally reflecting 1XN all light switch array |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 00246811 CN2434686Y (en) | 2000-07-27 | 2000-07-27 | Light injection whole internally reflecting 1XN all light switch array |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN2434686Y true CN2434686Y (en) | 2001-06-13 |
Family
ID=33605968
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 00246811 Expired - Lifetime CN2434686Y (en) | 2000-07-27 | 2000-07-27 | Light injection whole internally reflecting 1XN all light switch array |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN2434686Y (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101237294B (en) * | 2008-03-06 | 2012-04-25 | 上海交通大学 | Full-light controlled optical switch system |
-
2000
- 2000-07-27 CN CN 00246811 patent/CN2434686Y/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101237294B (en) * | 2008-03-06 | 2012-04-25 | 上海交通大学 | Full-light controlled optical switch system |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned | ||
| C20 | Patent right or utility model deemed to be abandoned or is abandoned |